TW201431097A - Wiring forming apparatus - Google Patents

Abstract

The present invention pertains to a wiring forming apparatus (1) wherein, by using a nozzle (40) having a plurality of discharge ports (44) arranged in a direction that intersects the direction of relative movement of a substrate (10), and simultaneously discharging an electrode material (a coating liquid) (15) from the discharge ports (44), a large number of fine electrodes (16) that extend in the direction of relative movement are simultaneously formed on the substrate surface (11) in a single relative movement between the nozzle (40) and the substrate (10). A mask unit (71), which prevents the electrode material (15) from adhering, is disposed on the periphery (12) of the substrate (10), which intersects the direction of relative movement and also intersects the arrangement direction of the plurality of discharge ports (44) formed in the nozzle (40). A wiring forming apparatus that enables wiring patterns to be formed in proper quantities on the substrate and enables defects to be reduced can thus be provided.

Description

Wiring forming device

The present invention relates to a wiring forming device for forming a wiring pattern on a substrate. In particular, it relates to a wiring forming device suitable for forming an electrode pattern of a solar cell element.

In one example of an element for forming a wiring pattern on a substrate, one of the semiconductor substrates on which the p-type and n-type semiconductor layers are bonded is described in the above-mentioned Japanese Patent Publication No. 2005-353851 (Patent Document 1). A solar cell element of a single-sided light receiving type that forms a light-receiving surface electrode (front electrode) and a back surface electrode. Further, in Patent Document 1, as a method of forming a substrate surface with respect to the electrode patterns, a screen printing method is described.

In the method of forming an electrode pattern for a solar cell element, a paste-like coating liquid (electrode) containing a pattern material (wiring material) is continuously ejected from a nozzle, as described in Japanese Laid-Open Patent Publication No. 2011-198982 (No. 2). Material), a method of drawing an electrode pattern on a substrate surface. Further, Patent Document 2 describes a method of arranging a plurality of fine electrodes called finger electrodes on a substrate in a direction in which they intersect with a direction of relative movement of the substrate. a plurality of nozzles connected to the discharge ports of the liquid storage space, the electrode materials are ejected from the respective ejection outlets, and a plurality of relative movements between the nozzles and the substrate are formed on the substrate surface to form a plurality of strips extending in the relative movement direction. Fine electrode.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-353851

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2011-198982

However, in the solar cell element described in Patent Document 1, a thin thin plate substrate such as a tantalum wafer is used for the semiconductor substrate on which the electrode pattern is formed. Therefore, in the screen printing of the semiconductor substrate with respect to the electrode pattern, the semiconductor substrate is broken due to the printing of the doctor blade, and the yield is lowered in the production of the solar cell element. Moreover, the screen printing plate which is modeled after the electrode pattern must be periodically cleaned and replaced, which is a major cause of cost increase.

On the other hand, in the method of forming the electrode pattern of the solar cell element described in Patent Document 2, since the nozzle pattern is formed in a non-contact state and the electrode pattern is formed on the substrate surface, the screen printing method does not occur. The substrate is broken. Moreover, it is also possible to suppress the cost caused by cleaning and replacement of special consumables such as screen printing plates.

On the other hand, in the method of forming an electrode pattern described in Patent Document 2, since the discharge control of the electrode material from each of the ejection ports is one of the nozzle units and is controlled, all of the finger electrodes formed on the substrate are simultaneously formed. The length of the wiring pattern is the same as the amount of relative movement between the nozzle and the substrate.

Further, in the production of a semiconductor substrate of a solar cell element, a wafer in which a tantalum ingot is sliced is used. In this case, the shape of the wafer may be quadrangular when a polycrystalline silicon wafer is used. However, when a single crystal germanium wafer is used, the wafer is formed from a tantalum in which the wafer is cut. Wafer. Therefore, when a single crystal germanium wafer is used for a semiconductor substrate of a solar cell element, since a large-area substrate is cut as much as possible from a circular wafer, the solar cell elements are arranged on the panel. It is possible to reduce the useless gap, so that the circular wafer is processed into a basal-shaped substrate obtained by cutting off the four corners of the quadrilateral.

Therefore, the method of forming the electrode pattern described in Patent Document 2 is used here. In the case where the pattern of the finger electrodes is formed on the octagonal semiconductor substrate, since the discharge control of the electrode material from each of the nozzles of the nozzle is one of the nozzle units and is controlled, it is not suitable for the octagonal semiconductor substrate surface. A finger electrode is formed. If a finger electrode is to be appropriately formed on the surface of the octagonal semiconductor substrate, the electrode material is also ejected to the device portion at the edge portion of the four corners of the quadrilateral or the periphery thereof. As a result, it is useful that the electrode material forming the finger electrode is also attached to the electrode pattern or the semiconductor layer on the opposite surface side, which may cause a defect such as a short circuit. It is also considered that the discharge control of the electrode material from each of the discharge ports of the nozzle is individually controlled for each discharge port instead of one of the nozzle units, but in this case, not only the configuration of the nozzle becomes complicated and large. The ejection control of the electrode material is also complicated.

Accordingly, an object of the present invention is to provide a wiring forming apparatus which ejects electrode materials from respective ejection ports by using nozzles in which a plurality of ejection ports are arranged in a direction crossing a moving direction of the substrate. With a relative movement between the nozzle and the substrate, a plurality of thin electrodes extending in the relative movement direction are formed on the substrate surface, and even a special substrate such as the octagonal semiconductor substrate of the solar cell element described above is formed. It is also possible to form a wiring pattern on the substrate as appropriate, and it is possible to reduce the number of defects.

In this case, the special substrate is not limited to the octagonal substrate, and the relative movement between the nozzle and the substrate has an edge that intersects the relative movement direction and also intersects with the arrangement direction of the plurality of ejection ports formed in the nozzle. The substrate of the portion or the substrate that cannot pass through the plurality of ejection ports formed in the nozzle at the same time and does not follow the edge portion of the relative movement direction between the nozzle and the substrate.

In order to solve the above problems, the present invention is characterized in that an electrode material (coating liquid) is ejected from each of the ejection ports by using nozzles in which a plurality of ejection ports are arranged in a direction crossing the relative moving direction of the substrate. One-time relative movement between the nozzle and the substrate, and wiring of a plurality of thin electrodes extending along the relative moving direction are formed on the substrate surface The apparatus is formed, and a mask unit for preventing adhesion of the electrode material is provided at an edge portion of the substrate that intersects with the relative movement direction and intersects with the arrangement direction of the plurality of ejection ports formed in the nozzle.

More specifically, the wiring forming apparatus of the present invention includes a substrate mounting table on which a substrate is placed, and a coating nozzle that ejects a coating liquid containing a wiring material on a substrate surface of a substrate placed on the substrate mounting table; a moving mechanism that relatively moves one of the coating nozzle and the substrate mounting table relative to the other; and a masking unit that is disposed to be relatively movable with respect to the coating nozzle together with the substrate mounting table; and the coating nozzle includes a plurality of a discharge port, which is arranged along a direction intersecting with a relative moving direction by the relative moving mechanism; the mask unit includes a mask film that intersects with a relative moving direction of the substrate using the relative moving mechanism when placed on the substrate of the substrate mounting table And an edge portion intersecting the arrangement direction of the plurality of ejection ports of the coating nozzle, and passing through a portion of the plurality of ejection ports by relative movement of the relative movement mechanism, interposing the portion and the portion Between the outlets, the coating liquid that is prevented from being ejected from the discharge port of the portion is adhered to the edge portion.

Further, the mask film is formed of a strip-shaped mask film, and the mask unit includes: a mask film supply portion configured to have a strip portion of the strip mask film to which the coating liquid is not attached; a film film collecting portion which is provided with a tape length portion to which a coating liquid adheres; and a mask film moving mechanism, wherein the self-masking film supply portion leads a strip length portion of the strip mask film to a specific amount, The new medium is placed between the edge portion and a portion of the ejection port, and the strip length portion of the strip mask film that has been interposed between the edge portion and a portion of the ejection port is introduced into the specific amount to the mask film for recycling. unit.

The present specification contains the contents described in the specification and/or drawings of Japanese Patent Application No. 2012-256609.

According to the present invention, relative to the relative movement between the nozzle and the substrate, a substrate that intersects with the moving direction and intersects with the edge portion of the plurality of ejection ports arranged in the nozzle, or has a plurality of ejection ports that cannot be simultaneously formed in the nozzle and does not face the nozzle and the substrate. The substrate on the edge of the moving direction can also form a wiring pattern on the substrate as appropriate, and the defect can be reduced.

The problems, configurations, and effects other than the above will be apparent from the description of the embodiments below.

1‧‧‧Wiring forming device

1-1‧‧‧Wiring forming device

1-2‧‧‧Wiring forming device

1-3‧‧‧Wiring forming device

1-4‧‧‧Wiring forming device

1-5‧‧‧Wiring forming device

10‧‧‧Semiconductor substrate (substrate)

10-1‧‧‧Semiconductor substrate (substrate)

10-2‧‧‧Semiconductor substrate (substrate)

10-3‧‧‧Semiconductor substrate (substrate)

10'‧‧‧Semiconductor substrate

10f‧‧‧Border section

10r‧‧‧Border section

11‧‧‧Substrate surface

12‧‧‧Edge

15‧‧‧Electrode material (coating solution)

16‧‧‧ finger wiring (finger electrode)

18‧‧‧ mask film

18'‧‧‧ mask film

19‧‧‧ Mask section

19'‧‧‧ Mask section

20‧‧‧Substrate mounting table

21‧‧‧ disc base

22‧‧‧ Column

23‧‧‧Loading board

24‧‧‧Substrate mounting surface

30‧‧‧Substrate transport mechanism

31‧‧‧Device base

32‧‧‧Substrate transfer table

40‧‧‧ Coating nozzle

41‧‧‧Nozzle body

42‧‧‧室

43‧‧‧Import

44‧‧‧Spray outlet

50‧‧‧Nozzle lifting mechanism

51‧‧‧Nozzle Support Frame

52‧‧‧ Column Department

53‧‧ ‧ Beam Department

54‧‧‧Nozzle lifting platform

60‧‧‧ Coating liquid supply mechanism

61‧‧‧Electrode material trough

62‧‧‧ slot body

63‧‧‧ supply port

64‧‧‧ Pressure adjustment port

65‧‧‧Pipe

66‧‧‧Regulator

67‧‧‧Valves

70‧‧ ‧ masking mechanism

71‧‧‧ mask unit

72‧‧‧Support board

73‧‧‧Supply roller

74‧‧‧Guide Roller

75‧‧‧Guide Roller

76‧‧‧Recycling roller

77‧‧‧Motor

77'‧‧‧Motor

81‧‧‧Unit support desk

82‧‧‧Support abutments

90‧‧‧ Mask unit lifting mechanism

91‧‧‧Support platform

95‧‧‧mask unit moving mechanism

96‧‧‧unit mobile station

100‧‧‧Control device

110‧‧‧Electrode material recovery agency

111‧‧‧Recycling

111'‧‧‧Recycling

112‧‧‧Recycling container

120‧‧‧ Cleaning institutions

121‧‧‧Guide Roller

122‧‧‧ Guide roller

123‧‧‧Clean waste yarn head

124‧‧‧Clean waste yarn head

125‧‧‧Waste cotton yarn supply roller

126‧‧‧Waste cotton yarn supply roller

127‧‧‧Waste cotton yarn recycling roller

128‧‧‧Waste cotton yarn recycling roller

129‧‧‧Motor

131‧‧‧Guide Roller

132‧‧‧Guide Roller

A‧‧‧non-wiring forming area

B‧‧‧Wiring forming area

C‧‧‧near the surrounding area

D‧‧‧ Attachment

L‧‧‧ size

M‧‧‧ mask film recovery

S10~S70‧‧‧Steps

W‧‧‧Width size

X‧‧‧ direction

X‧‧‧ directions

Y‧‧‧ direction

Y‧‧‧ direction

Z‧‧‧direction

X-X‧‧‧向向方向

Y-Y‧‧‧向向方向

VII-VII‧‧‧向向方向

Fig. 1 is a plan view showing a configuration of a wiring forming apparatus according to a first embodiment of the present invention.

Fig. 2 is a view showing the wiring forming device shown in Fig. 1 in the Y-Y direction as viewed in Fig. 1.

Fig. 3 is a view showing the configuration of the wiring forming apparatus shown in Fig. 1 in the X-X direction as viewed in Fig. 1.

Fig. 4 is an explanatory view showing the internal structure of the coating nozzle.

Fig. 5 is an explanatory view of a substrate surface of a semiconductor substrate to be coated.

Fig. 6 is a plan view showing a portion of a substrate stage of a wiring forming device provided with a mask mechanism.

Figure 7 is a front elevational view of the masking unit of the masking mechanism as viewed in the direction of view of Figure VII-VII in Figure 6.

Fig. 8 is a flow chart showing an embodiment of a process of forming a finger wire by the wire forming apparatus of the embodiment.

Fig. 9 is an explanatory view showing an embodiment of a mask film of a mask portion for recovery and derivation of a specific amount thereof.

Fig. 10 is a front view of a mask unit of the wiring forming apparatus according to the second embodiment of the present invention.

Fig. 11 is a front view showing a mask unit of the wiring forming apparatus according to the third embodiment of the present invention.

Fig. 12 is a plan view showing the wiring forming apparatus of the fourth embodiment of the present invention.

Figs. 13(A) to 13(C) are explanatory views showing an embodiment of a mask film of a mask portion of a wiring forming apparatus according to a fifth embodiment of the present invention, which is recovered and derived in a specific amount.

Hereinafter, an embodiment of the wiring forming apparatus of the present invention will be described based on the drawings. In the description, a wiring device in which a finger electrode is formed on a substrate surface of a semiconductor substrate in the manufacture of a solar cell element will be described as an example, but a bus bar electrode which forms a cross-sectional finger electrode may be used. The wiring device is not limited to the manufacture of the solar cell element, and may be a wiring forming device in which a plurality of wiring patterns extending in a specific direction are formed on the substrate surface.

<First embodiment>

Fig. 1 is a plan view showing a configuration of a wiring forming apparatus according to a first embodiment of the present invention.

Fig. 2 is a view showing the wiring forming device shown in Fig. 1 in the Y-Y direction as viewed in Fig. 1.

Fig. 3 is a view similarly seen from the X-X direction of Fig. 1 as viewed in the direction of the drawing.

As shown in FIG. 1 to FIG. 3, the wiring forming apparatus 1-1 of the present embodiment includes a substrate mounting table 20, a substrate transfer mechanism 30, a coating nozzle 40, a nozzle elevating mechanism 50, a coating liquid supply mechanism 60, and a mask mechanism 70. And control device 100.

As shown in FIG. 2 and FIG. 3, the substrate mounting table 20 is attached to the column portion 22 which is fixed to the center of the disk surface of the disk-shaped base 21, and is attached to the upper surface of the electrode material (coating liquid) 15 to be coated. That is, the configuration of the mounting plate 23 of the semiconductor substrate (substrate) 10.

The substrate mounting table 20 has the substrate mounting surface 24 of the mounting plate 23 horizontal, and the disk-shaped base 21 is attached and fixed to the substrate transfer table 32 of the substrate transfer mechanism 30.

The substrate transfer mechanism 30 is provided on the device base 31 and includes a substrate transfer table 32 that extends in the substrate transfer direction (x-axis direction). When the substrate transfer mechanism 30 is moved by a drive source (for example, a motor) (not shown), the substrate transfer mechanism 30 is mounted and fixed to the substrate. The substrate stage 20 of the transfer table 32 moves along the extending direction (x-axis direction) of the substrate transfer table 32, and the semiconductor substrate 10 held by the substrate mounting surface 24 is placed and transported. The substrate transfer mechanism 30 is not limited to the transfer mechanism including the substrate transfer table 32, and may be a transfer mechanism that allows the substrate stage 20 to move linearly.

Moreover, the substrate transfer mechanism 30 may include a moving mechanism that moves and displaces the substrate mounting table 20 on a horizontal plane in the y-axis direction (the width direction of the substrate transfer table 32) perpendicular to the transport direction (x-axis direction), or The substrate mounting table 20 is a rotational mechanism that is rotationally displaced in a horizontal plane defined by the x-axis and the y-axis. By moving the mechanism, the relative position of the semiconductor substrate 10 in the y-axis direction with respect to the coating nozzle 40 when the semiconductor substrate 10 passes under the coating nozzle 40 can be adjusted, and the semiconductor of the semiconductor substrate 10 passing under the coating nozzle 40 can be adjusted by the rotating mechanism. The relative orientation of the substrate 10 relative to the coating nozzle 40.

In the middle of the transport section along the extending direction (x-axis direction) of the substrate transfer table 32, it is provided to support the coating nozzle 40 so as not to hinder the transport of the semiconductor substrate 10 placed on the substrate stage 20. The nozzle supports the frame 51. In the illustrated example, the nozzle support frame 51 has the column portion 52 and the beam portion 53 and is disposed below the column portion 52 and below the beam portion 53 to ensure the width direction of the semiconductor substrate 10 placed on the substrate stage 20. The passage space (in the y-axis direction) and the height direction (z-axis direction).

A nozzle elevating mechanism 50 having a nozzle elevating table 54 extending in the height direction (z-axis direction) is provided in the beam portion 53 of the nozzle support frame 51. The coating nozzle 40 is attached and fixed to the nozzle lifting table 54, and the discharge port 44 faces downward.

When the nozzle lifting and lowering mechanism 50 is moved by the driving source (for example, a motor) (not shown), the coating nozzle 40 attached and fixed to the nozzle lifting table 54 is extended along the nozzle lifting platform 54. The configuration in which the coating nozzle 40 is moved up and down (in the z-axis direction) is moved. The nozzle elevating mechanism 50 raises and lowers the coating nozzle 40 to adjust the ejection port 44 of the coating nozzle 40 and the semiconductor substrate 10 when the semiconductor substrate 10 placed on the substrate mounting table 20 is placed below the coating nozzle 40 by the substrate transfer mechanism 30. Height direction between the substrate faces 11 The distance (in the z-axis direction). The nozzle elevating mechanism 50 aligns the gap between the two when the electrode material 15 is applied, and sets the coating nozzle 40 to a height. Further, the nozzle elevating mechanism 50 is not limited to the configuration in which the nozzle elevating table 54 is provided in a lifting manner, and may be a nozzle moving mechanism that allows the coating nozzle 40 to move up and down.

Fig. 4 is an explanatory view showing the internal structure of the coating nozzle.

The coating nozzle 40 is constituted by a nozzle body 41 in which a chamber (storage space) 42 is formed, and an inlet port 43 of the electrode material 15 and a plurality of discharge ports 44 are provided. The coating nozzle 40 ejects the electrode material 15 stored in the chamber 42 through the introduction port 43 from the respective ejection ports 44, and when the substrate mounting table 20 is moved below the nozzle by the substrate transfer mechanism 30, it is placed and held on the substrate mounting table. The electrode material 15 is applied to the substrate surface 11 of the semiconductor substrate 10 on the substrate mounting surface 24 of 20.

At this time, in order to allow a relative movement between the application nozzle 40 and the semiconductor substrate 10 in the substrate transfer direction (x-axis direction), the substrate surface 11 of the semiconductor substrate 10 is formed along the relative movement direction (x-axis direction). a plurality of extended thin electrodes, that is, finger wirings (finger electrodes) 16 of the solar cell elements, a plurality of ejection openings 44 on the lower surface of the nozzle body 41, and the number of the finger wirings 16 to be formed, The interval at which the finger wirings 16 are formed (wiring pitch) is arranged in a line shape.

In the illustrated example, the coating nozzle 40 causes the plurality of discharge ports 44 arranged in a row to face downward, and the arrangement direction of the plurality of discharge ports 44 is along the width direction (y-axis direction) of the substrate transfer table 32, and The nozzle body 41 is attached and fixed to the nozzle lifting table 54 of the nozzle lifting mechanism 50.

The coating liquid supply mechanism 60 includes an electrode material tank 61 that supplies an electrode material (coating liquid) 15 to the coating nozzle 40, and stores the electrode material 15; and a valve 67 that supplies/stops supply of the electrode material 15 to the coating nozzle 40. .

The electrode material groove 61 is formed in a groove body 62 in which a groove chamber for storing the electrode material 15 is formed, and a sealing structure in which the supply port 63 and the pressure adjustment port 64 are formed.

A pipe 65 that communicates with the inlet port 43 of the coating nozzle 40 is connected to the supply port 63. The pressure adjustment port 64 has a configuration in which a high-pressure gas is supplied via the regulator 66, a pressure (back pressure) in the chamber is controlled by the regulator 66, and a supply speed of the electrode material 15 supplied to the coating nozzle 40 via the pipe 65 is controlled. The discharge amount (discharge speed) of the electrode material 15 ejected from each of the discharge ports 44 of the coating nozzle 40 can be adjusted.

The valve 67 is provided, for example, in the middle of the pipe 65, and the supply/stop supply of the electrode material 15 can be performed to the coating nozzle 40 by opening/closing the valve. By performing ON/OFF control of the valve 67 by placing the lower side of the substrate stage 20 on which the semiconductor substrate 10 is held, application or stop coating of the electrode material 15 can be performed on the substrate surface 11.

Further, in the illustrated example, the coating liquid supply mechanism 60 employs a chamber for coating the nozzle 40 by using the high pressure gas pressure feed electrode material 15 from the high pressure gas source and the valve opening/closing valve using the valve 67. 42 is configured to supply the electrode material 15 and to control the discharge/stop ejection of the electrode material 15 from the respective discharge ports 44 of the coating nozzle 40. However, the present invention is not limited thereto, and the cylinder pump, the Mono pump, the piston pump, and the plunger pump may be used. Various liquid feeding pumps such as a diaphragm pump and a reciprocating pump are used as the coating liquid supply mechanism 60 to perform control.

The mask mechanism 70 prevents the electrode material 15 ejected from the ejection port 44 of the coating nozzle 40 from adhering to the plurality of ejection ports 44 that intersect the substrate transfer direction (x-axis direction) by the substrate transfer mechanism 30 and also the coating nozzle 40. The placement in which the alignment directions intersect is held by the edge portion 12 of the semiconductor substrate 10 of the substrate stage 20.

Here, when the details of the mask mechanism 70 are described, the substrate surface 11 of the semiconductor substrate 10 in which the finger wiring 16 is formed by the wiring forming device 1-1 of the present embodiment is first described based on FIG. 5 for the manufacture of the solar cell element. Description.

Fig. 5 is an explanatory view of a substrate surface of a semiconductor substrate to be coated.

In the illustrated example, the substrate surface 11 of the semiconductor substrate 10 has an octagonal shape obtained by cutting out the four corners of the quadrilateral.

Here, when the finger wiring 16 is formed on the substrate surface 11, it is formed separately in order to prevent occurrence. For example, the solar cell element is defective in the front surface of the substrate of the semiconductor substrate 10, the front surface of the back surface, and the short circuit of the back surface electrode, and the finger wiring (finger electrode) 16 leaves a specific width on the peripheral portion of the substrate surface of the semiconductor substrate 10. The non-wiring installation area A of the finger wiring 16 is not formed, but is formed in the wiring installation area B which is surrounded by the non-wiring installation area A.

The finger wiring (finger electrode) 16 is formed by the wiring forming device 1-1, and is a boundary portion between the non-wiring forming region A and the wiring forming region B on the front side in the transport direction in the substrate transport direction (x-axis direction). When 10f passes under the nozzle, the electrode material 15 is ejected from the discharge port 44 of the coating nozzle 40, and when the boundary portion 10r between the non-wiring forming region A and the wiring forming region B on the rear side in the conveying direction passes below the nozzle, the self-coating nozzle 40 is finished. The discharge port 44 discharges the electrode material 15, whereby a plurality of finger-shaped wirings (finger electrodes) 16 extending in the substrate transfer direction (x-axis direction) are formed in the wiring formation region B of the substrate surface 11.

However, the substrate 10 has an arrangement of a plurality of ejection ports 44 in the substrate transport direction (x-axis direction) and the coating nozzle 40, as shown in the figure, in the octagonal shape of the semiconductor substrate 10 obtained by cutting the four corners of the quadrilateral. When the edge portion 12 in which the direction (y-axis direction) is crossed is crossed, the electrode material 11 is controlled to be ejected from the respective ejection ports 44 of the coating nozzle 40 by the valve unit in the nozzle unit, so that wiring cannot be performed. The formation region B is appropriately formed with the finger wiring 16. For example, when the overflow prevention is prioritized, the width of the region along the substrate transport direction (x-axis direction) of the non-wiring formation region A before and after the transport direction becomes larger than the width direction along the substrate transfer table 32 (y-axis) The width of the area of the direction). In addition, when the width of the region along the substrate transport direction (x-axis direction) of the non-wiring formation region A before and after the transport direction is the same as the width of the region along the width direction (y-axis direction) of the substrate transfer table 32, the edge is formed at the edge. The electrode material 11 is also attached to the portion C near the periphery of the portion 12.

The mask mechanism 70 prevents the electrode material 11 from adhering to the edge portion 12, preferably the portion C near the periphery of the portion of the non-wiring forming region A of the edge portion 12, and even if it is the semiconductor substrate 10 having the edge portion 12, Wiring forming region B appropriately forms finger wiring (referring to Electrode) 16.

Fig. 6 is a plan view showing a portion of a substrate stage of a wiring forming device provided with a mask mechanism.

Figure 7 is a front elevational view of the masking unit of the masking mechanism as viewed in the direction of view of Figure VII-VII in Figure 6.

As shown in FIGS. 1 to 3 and 6, the mask mechanism 70 includes a mask unit 71, a mask unit elevating mechanism 90, and a mask unit moving mechanism 95 (not shown in FIG. 6).

As shown in FIG. 7, the mask unit 71 rotatably supports the supply roller 73, the guide rollers 74, 75, and the recovery roller 76 on the front surface of the support plate 72. The recovery roller 76 can be provided by a motor 77 provided on the back surface of the panel. And turn. Thereby, the strip-shaped mask film 18 wound around the supply roller 73 is guided by the guide rollers 74 and 75 and driven by the motor 77, and then wound around the recovery roller 76. The amount (lead length) derived from the supply roller 73 by the mask film 18 is adjusted in accordance with the driving/stopping of the motor 77. Further, in the illustrated example, the guide rollers 74, 75 are disposed apart from each other at intervals larger than the size L of the edge portion 12 of the semiconductor substrate 10 shown in Fig. 5, and are disposed between the guide rollers 74, 75. The mask portion 19 is formed by a length portion of the mask film 18 longer than the length L of the edge portion 12.

For the mask film 18, for example, a strip-shaped PET (Polyethylene terephthalate) film is used. Further, it is not limited to the PET film, and a resin film such as nylon, polyvinyl chloride or polyester, or a metal film such as stainless steel, aluminum or copper may be used. Further, the mask film 18 has a width dimension larger than the width dimension W of the non-wiring area A of the semiconductor substrate 10 shown in FIG. In the illustrated example, the mask film 18 is formed to cover the width dimension of the portion C near the periphery of the edge portion 12 shown in FIG.

The mask unit 71 is disposed on each edge portion 12 of the semiconductor substrate 10 mounted on the substrate stage 20, and is disposed such that the front portion of the support plate 72 on the side of the mask portion 19 faces the corresponding edge portion 12 , can be approached/separated with respect to the edge portion 12, and the mask portion can be adjusted In the height direction (z-axis direction) of the minute 19, the semiconductor substrate 10 to be coated is integrally moved in the substrate transport direction (x-axis direction).

In the case where the octagonal-shaped semiconductor substrate 10 is formed with the wiring forming device 1-1 of the finger wiring 16, one of the front side and the rear side of the transport direction of each side of the substrate transfer table 32 in the width direction (y-axis direction) The mask unit 71 is attached and fixed to the unit support table 81 which is located on both sides in the width direction (y-axis direction) of the substrate transfer table 32. One of the unit support stages 81 is adjusted so that the front surface of each of the mask units 71 faces the edge portion 12 corresponding to the semiconductor substrate 10 on which the substrate mounting surface 24 of the substrate stage 20 is placed.

Further, each unit support table 81 is attached to a unit lifting table 91 (see FIG. 3) fixed to the mask unit elevating mechanism 90. The mask unit elevating mechanism 90 corresponds to each unit support table 81, and the support table elevating table 91 is extended along the height direction (z-axis direction) of the substrate stage 20, and is fixed to the support provided under each unit support table 81. Abutment 82. When the mask raising/lowering mechanism 90 is moved by the driving source (for example, a motor) (not shown), the unit supporting table 81 attached to the support table elevating table 91 is oriented in the height direction (z) In the axial direction, the mask portion 19 of each mask unit 71 is moved up and down.

Further, each of the support bases 82 is attached to a unit moving stage 96 (see FIGS. 1 and 2) fixed to the mask unit moving mechanism 95. The mask unit moving mechanism 95 is provided so as to be movable along the width direction (y-axis direction) of the substrate transfer table 32 so as to be movable integrally with the substrate stage 20 in the substrate transfer direction (x-axis direction). The disk-shaped base 21 is fixed to the substrate stage 20. When the mask moving unit 95 moves the unit moving table 96 by driving by a driving source (for example, a motor) (not shown), the supporting base 82 attached and fixed to the unit moving table 96 is oriented in the width direction (y-axis direction). The movement is performed so that the mask portion 19 of each mask unit 71 is close to/separated from the edge portion 12 of the semiconductor substrate 10 on which the substrate mounting surface 24 of the substrate stage 20 is placed.

In the example shown in the drawing, one of the front side and the rear side of the transport direction of each side of the substrate transfer table 32 in the width direction (y-axis direction) is shared by the mask unit 71 by the unit. The element support table 81 is opened and separated from the edge portion 12 of the semiconductor substrate 10 by raising and lowering the mask portion 19 by the mask unit elevating mechanism 90 and the mask unit moving mechanism 95 common to the unit. In the example shown in the drawing, one of the front side and the rear side of the transport direction of each of the both sides in the width direction (y-axis direction) of the substrate transfer table 32 is attached to and fixed to the unit unit of the unit. In the configuration of the stage 81, one of the two sides of the substrate transfer table 32 in the width direction (y-axis direction) of the front side and the rear side of the transfer direction of the substrate transfer table 32 is attached and fixed to the unit. In the configuration of the unit support table, the mask portion 19 can be similarly raised and lowered to approach/separate from the edge portion 12 of the semiconductor substrate 10.

The control device 100 is constituted by a microcomputer or the like. The control device 100 controls the substrate mounting table 20, the substrate transfer mechanism 30, the coating nozzle 40, the nozzle elevating mechanism 50, the coating liquid supply mechanism 60, and the mask by executing the wiring forming program stored in the memory based on the recipe recipe input in advance. The operation of each part of the device such as the membrane mechanism 70.

Next, an example of the process of forming the finger wiring 16 with respect to the semiconductor substrate 10 by the control device 100 for controlling the operation of each part of the device will be described with reference to FIG. 8 with respect to the wiring forming apparatus 1-1 having the above configuration.

Fig. 8 is a flow chart showing an embodiment of a process of forming a finger wiring by the wiring forming device of the embodiment.

In the description, the wiring forming apparatus 1-1 is configured to operate the mask mechanism 70 in advance in the initializing state by the mask unit moving mechanism 95 so as not to be in the height direction (z-axis direction) of the semiconductor substrate 10 to be coated. The manner of overlapping is located at the end of the separation side of the extension direction of the unit mobile station 96, and the mask unit 71 of the mask mechanism 70 is preliminarily actuated by the mask unit elevating mechanism 90, and is located at the unit lifting platform 91. Extend the upper end of the direction. Further, the coating nozzle 40 is operated by the nozzle elevating mechanism 50 in advance, and is located at the upper end of the nozzle elevating table 54 in the extending direction.

The mask mechanism 70 is located at the end of the separation side of the extension direction of the unit moving table 96. In a state in which the semiconductor substrate 10 having the octagonal shape is replaced, a semiconductor having a quadrangular shape having the same length in the substrate transfer direction (x-axis direction) and the substrate transfer table 32 in the width direction (y-axis direction) is used. The substrate is placed on the substrate stage 20, and the mask portion 19 of the mask unit 71 does not overlap the semiconductor substrate 10 of the quadrangular shape in the height direction (z-axis direction).

In the wiring forming apparatus 1-1 of the present embodiment, in accordance with the setting of the process recipe of the octagonal shaped semiconductor substrate 10 to be applied in the initial state, the respective units of the apparatus are set to the following standby state.

The mask unit 71 is moved by the mask unit moving mechanism 95, and the mask portion 19 is moved and disposed in the height direction (z-axis direction) of the edge portion 12 of the semiconductor substrate 10 which is not coated, that is, the octagonal shape. The state of the horizontal standby position as shown in FIG. Further, the mask unit 71 is moved by the mask unit elevating mechanism 90, and the mask portion 19 of the mask film 71 is moved so as not to be in the height direction (z-axis direction) of the electrode material 15 applied to the substrate surface 11. A sufficient height position of the contact, that is, a state in which the height is in the standby position. The application nozzle 40 is operated by the nozzle elevating mechanism 50, and the gap between the ejection port 44 at the time of application of the electrode material 15 and the substrate surface 11 of the semiconductor substrate 10 is set to match the set value, and is moved and disposed at the height of the ejection operation. status. The substrate mounting table 20 is moved by the substrate transfer mechanism 30, and the semiconductor substrate 10 placed on the substrate mounting surface 24 in the transfer section along the extending direction (x-axis direction) of the substrate transfer table 32 is moved. The state in which the substrate is not attached to the coating nozzle 40 in the height direction (z-axis direction) is attached or detached.

In the wiring board forming apparatus 1-1 which is in the standby state, the octagonal semiconductor substrate 10 to be coated is placed on the substrate mounting surface 24 of the substrate mounting table 20 in the step S10.

Then, in step S20, when the wiring forming apparatus 1-1 detects that the semiconductor substrate 10 is placed on the substrate mounting surface 24 by a sensor (not shown), the mask unit moving mechanism 95 is controlled to be operated. The membrane mechanism 70 moves from the horizontal standby position as shown in FIG. 6 to The working position in the horizontal direction shown in Fig. 1 is applied.

In the state in which the mask mechanism 70 shown in FIG. 1 has been moved to the horizontal application working position, the mask unit 71 is as shown in FIG. 5 in which the mask portion 19 and the octagonal shaped semiconductor substrate 10 to be coated are applied. A portion C in the vicinity of the periphery of the edge portion 12 is in a state of being overlapped in the height direction (z-axis direction).

Next, in step S30, the wiring forming apparatus 1-1 performs the actuation control of the mask unit elevating mechanism 90, and moves the mask portion 19 of the mask unit 71 to the mask mechanism 70 disposed at the height direction standby position. The manner in which the mask portion 19 reaches the coating operation position in a specific height direction is lowered. Here, the height direction coating work position means that the mask portion 19 of the mask unit 71 is located at the discharge port 44 of the coating nozzle 40 disposed to be disposed at the discharge working height, and the semiconductor substrate 10 placed and held by the substrate mounting surface 24 The height position between the substrate faces 11 and the height of the surface of the mask film 18 of the mask portion 19 is a position below the specific amount based on the height position of the discharge port 44 of the coating nozzle 40.

As described above, when the mask film 18 is masked to the edge portion 12 of the semiconductor substrate 10, the wiring forming device 1-1 applies the electrode material 15 to the substrate surface 11 of the semiconductor substrate 10 in step S40.

In the case of the wiring forming process of the present embodiment, since the coating nozzle 40 is disposed at the height of the discharge operation, the wiring forming device 1-1 performs the operation control of the substrate transfer mechanism 30, and is disposed along the substrate transfer table. The substrate stage 20 in a state in which the substrate loading/unloading position of the transport section of the extending direction (x-axis direction) of 32 is moved in the transport direction and passes under the application nozzle 40. At this time, the wiring forming apparatus 1-1 is synchronized with the passage of the front side boundary portion 10f/the rear side boundary portion 10r in the conveyance direction of the non-wiring formation region A and the wiring formation region B of the substrate surface 11 shown in FIG. The valve opening/closing valve (application/stop coating of the electrode material 15) of the valve 67 of the coating liquid supply mechanism 60 is performed, and the wiring formation region B on the substrate surface is appropriately formed in a plurality of directions along the substrate (x-axis) Directional extension finger wiring (finger electrode) 16. Thereafter, if the entire semiconductor substrate 10 is sprayed by coating Below the nozzle 40, when the substrate mounting table 20 reaches the substrate attaching and detaching position in the transporting section along the extending direction (x-axis direction) of the substrate transporting table 32, the wiring forming apparatus 1-1 performs the actuation control of the substrate transporting mechanism 30. The movement of the substrate stage 20 is stopped.

In addition, the substrate loading/unloading position in the step S40 may be a moving position in which the coating nozzle 40 is located at the center and is opposite to the substrate loading/unloading position before the application of the step S10, and the semiconductor substrate may be formed by one side. When the entire substrate 10 is passed under the application nozzle 40, the substrate stage 20 is reciprocated in the transport section, and is set to the same position as the substrate loading/unloading position before application. When the substrate loading/unloading position is set to the same position as described above, the coating from the coating nozzle 40 to the electrode material 15 of the substrate surface 11 may be employed, and the coating nozzle 40 may be passed under the coating nozzle 40 in each reciprocating movement of the substrate mounting table 20. The configuration may be performed when the semiconductor substrate 10 passes under the coating nozzle 40 in either of the forward movement or the double movement.

If the coating of the electrode material 15 has been performed, in step S50, the wiring forming device 1-1 performs actuation control of the mask unit elevating mechanism 90 so that the mask portion 19 of the mask unit 71 reaches a specific height direction. The mask mechanism 70 that moves and arranges the coating operation position raises the mask portion 19 so as to reach the height direction standby position.

Further, in step S60, the wiring forming apparatus 1-1 performs actuation control of the mask unit moving mechanism 95 to move the mask mechanism 70 from the horizontal direction coating working position to the horizontal direction standby position, and simultaneously to the mask unit 71. The motor 77 performs the operation control, and the mask film 18 of the mask portion 19 is recovered to a certain amount to the side of the recovery roller 76, and the mask film 18 corresponding to the specific amount is led out from the supply roller 73 side and placed in the mask. Part 19. At this time, the recovery and derivation of the mask film 18 is performed by the motor 77 to rotate the recovery roller 76, whereby the mask film 18 can be used to bend the mask film between the supply roller 73 and the recovery roller 76 to open the mask portion. 19. The amount of recovery and derivation of the mask film 18 is detected by, for example, a sensor (not shown), and the amount of rotation of the guide roller 74 or 75 is detected, whereby the masks of the supply roller 73 and the recovery roller 76 are not wound. Thickness affects and can be managed correctly.

In step S70, when the masking mechanism 70 is moved to the horizontal standby position, the wiring forming apparatus 1-1 mounts and holds one of the substrate mounting surfaces 24 and forms a plurality of finger wirings (finger electrodes 16). The semiconductor substrate 10 is carried out from the substrate stage 20 to the outside of the apparatus. Thereby, the process of forming a plurality of finger wirings 16 on the substrate surface 11 of the semiconductor substrate 10 is completed.

As a result, the wiring forming apparatus 1-1 can repeatedly form a plurality of finger wirings (finger electrodes) 16 on the semiconductor substrate 10 by repeatedly performing the formation processing of the series of finger wirings in the above steps S10 to S70.

Figure 9 is an illustration of one embodiment of the recovery and derivation of a particular amount in step S60.

In FIG. 9, the specific amount m in which the mask film 18 of the mask unit 71 described in the step S60 is recovered and derived is described in relation to the semiconductor substrate 10' to be coated next.

In FIG. 9, the semiconductor substrate 10' as the next application target is placed in the substrate mounting surface 24 of the substrate mounting table 20 (step S10), and the mask mechanism 70 is moved to the horizontal coating operation position. (Step S20), the state in which the mask portion 19 is lowered to the coating position in the height direction (step S30), that is, the state before the application of the electrode material 15 (step S40) is performed.

As shown in Fig. 9, the specific amount m of the mask film 18 of the mask unit 71 described in the step S60 is recovered and derivatized to become the electrode material 15 of the mask portion 19 of the mask film 18 recovered in the step S60. The portion D is not left as the mask film 18 with respect to the mask portion 19' of the semiconductor substrate 10', and the attachment portion D does not overlap with the portion C of the vicinity of the periphery of the edge portion 12 of the semiconductor substrate 10' by a specific amount m1.

In this manner, in the recovery and derivation of the mask film 18 of the mask unit 71, the entire position of the semiconductor substrate 10 is removed by the substrate under the nozzle, and the mask mechanism 70 is brought to the height direction standby position by the mask portion 19. After the rise, it is even if it is coated When the mask film 18 is close to the substrate surface 11 in the height direction of the gap between the discharge port 44 of the cloth nozzle 40 and the substrate surface 11 of the semiconductor substrate 10, the movement accompanying the recovery and derivation of the mask film 18 is caused. Also, the adjacent finger wirings 16 coated on the substrate surface 11 are not short-circuited to each other.

Further, since the movement of the masking mechanism 70 from the horizontal coating working position to the horizontal standby position is performed simultaneously with the recovery and derivation of the mask film 18, the amount of processing at the substrate loading and unloading position can be reduced.

Further, in the wiring forming apparatus 1-1 of the present embodiment, the masking mechanism 70 is raised so that the mask portion 19 reaches the height direction standby position at the substrate loading/detaching position, and then the mask film of the mask unit 71 is performed. The recovery and derivation of 18, but when the height direction coating operation position is set to a position in the height direction which does not contact the substrate surface 11 or the electrode material 15 to which it is applied, the mask mechanism 70 can be kept fixed to the height. The direction of the coating work position is applied, and the mask unit elevating mechanism 90 and the raising and lowering process of the mask portions 19 of steps S30 and S50 shown in Fig. 8 are omitted.

Further, in the wiring forming apparatus 1-1 of the present embodiment, when the electrode material 15 is applied once to the substrate surface 11 every time, the mask film 18 is recovered and taken out in step S60, but after coating, The gap between the pressure film 18 and the discharge port 44 of the coating nozzle 40 is sufficiently ensured, and the mask film 18 may be recovered in step S60 every time the coating material 15 is applied once. And export.

As described above, according to the wiring forming apparatus 1-1 of the present embodiment, even the semiconductor substrate 10 having the octagonal shape obtained by cutting out the four corners of the quadrilateral can be appropriately formed on the substrate surface 11 which is the light receiving surface of the solar cell element. A plurality of finger wirings 16 are formed at the same time, and the number of defects can be reduced.

<Second embodiment>

The wiring forming apparatus 1-2 of the present embodiment has a configuration in which the mask unit 71 mounted and fixed to the unit support table 81 is provided in the wiring forming apparatus 1-1 of the first embodiment. The electrode material recovery mechanism 110 of the electrode material 15 attached to the mask film 18 is received.

In the wiring forming apparatus 1-2 of the present embodiment, the configuration of each of the wiring forming apparatuses 1-2 other than the mask unit 71 or the actuation control thereof and the wiring forming apparatus 1-1 of the first embodiment are provided. The same or similar components are denoted by the same reference numerals, and their description will be omitted.

Fig. 10 is a front view of a mask unit of the wiring forming apparatus according to the second embodiment of the present invention.

The electrode material recovery mechanism 110 includes a recovery tool 111 for scraping the electrode material 15 attached to the mask film 18 collected on the side of the recovery roller 76 from the surface of the mask film 18, and a recovery container 112, which is stored in advance The electrode material 15 recovered by the recovery tool 111 is constituted.

The recovery tool 111 has a blade portion that is thinned and flat on the front end side. The recovery tool 111 is such that the blade portion is in close contact with the surface of the mask film 18, and the base end side is pivotally supported by the support plate 72. Further, in the illustrated example, since the blade portion on the distal end side is in close contact with the surface of the mask film 18 wound around the recovery roller 76, it is also provided so as not to affect the winding thickness of the mask film 18. An energizing device (not shown) that presses the blade portion against the surface of the mask film 18. As the energizing means, for example, a spring or the like is used.

The recovery container 112 is disposed on the lower side thereof so as to overlap the recovery tool 111 in the height direction. The recovery container 112 includes an upper surface open container and is detachably or fixedly mounted with respect to the support plate 72 or the unit support table 81.

According to the wiring forming apparatus 1-2 of the present embodiment, when the mask film 18 is wound around the recovery roller 76, the recycling tool 111 can be attached to the surface of the film by, for example, the adhesion portion D shown in FIG. The electrode material 15 of the mask film 18 on the side of the recovery roller 76 is recovered. Further, the electrode material 15 that has been scraped and dropped is stored in the recovery container 112. The recovered electrode material 15 can be sold as a circulating material, and a solvent of a volatile amount is added to be reused as the electrode material 15.

Further, in the illustrated example, the recovery tool 111 is disposed on the recovery roller 76, but the collection portion from the guide roller 75 to the recovery roller 76 of the mask film 18 to which the electrode material 15 is adhered may be used. Properly configured.

<Third embodiment>

The wiring forming apparatus 1-3 of the present embodiment is used in the wiring forming apparatus 1-1 of the first embodiment, and the mask film 18 of the mask unit 71 is a ring-shaped mask film 18', and is self-looped. The return path from the recovery side to the supply side of the mask film 18' is configured such that the electrode material recovery mechanism 110 and the cleaning mechanism 120 are disposed.

In the wiring forming apparatus 1-3 of the present embodiment, the configuration of each of the wiring forming apparatuses 1-3 other than the mask unit 71 or the actuation control thereof and the wiring forming apparatus 1-1 of the first embodiment are provided. The same or similar components are denoted by the same reference numerals, and their description will be omitted.

Fig. 11 is a front view showing a mask unit of the wiring forming apparatus according to the third embodiment of the present invention.

In the wiring forming apparatus 1-3 of the present embodiment, the mask film 18' provided in the mask unit 71 is not provided with the masks used in the wiring forming apparatuses 1-1 and 1-2 of the first and second aspects. The film 18 has a structure of a starting end and a terminal, and is formed in a ring shape. Further, the mask film 18' is configured to be guided by the guide rollers 74, 75 on both sides of the mask portion 19, and the return portion from the guide roller 75 to the guide roller 74 is in the illustrated example, in turn The guide roller 131 disposed on the introduction side of the cleaning mechanism 120, which is disposed later, is provided in one of the cleaning mechanisms 120 to guide the holding guide rollers 121 and 122 and the guide roller 132 disposed on the lead-out side of the cleaning mechanism 120.

The motor 77' for mask film transport disposed on the back surface of the support plate 72 is rotated to guide the guide rollers 74, 131, 132, and 75 of the mask film 18', and a pair of holding guide rollers 121 and 122. One or more, and the annular mask film 18' is moved to rotate along the rollers. Hereinafter, the motor 77' will be described as a configuration for rotating the holding guide roller 121 in the rolls.

The electrode material recovery mechanism 110 is provided in the collection portion of the transfer mask film 18' on the introduction side of the cleaning mechanism 120, and is provided in the guide roller 131 disposed on the introduction side of the cleaning mechanism 120 in the illustrated example.

The electrode material recovery mechanism 110 is configured such that the recovery device 111' is disposed at the central portion of the support plate 72, and both end sides of the central portion are respectively formed into a blade portion and can be shaken and pressed against the mask film. The position of the blade portion on the one side of the surface of 18' is higher than that of the other portions, and is the same as the configuration of the electrode material collecting mechanism 110 of the second embodiment.

The cleaning mechanism 120 is configured to include: a pair of holding guide rollers 121 and 122; a pair of waste cotton yarn supplying rollers 125 and 126, which are wound with unused strip-shaped cleaning waste cotton yarn ends 123 and 124; and waste cotton yarn The head recovery rolls 127, 128 are taken up and taken out from the waste cotton yarn supply rolls 125, 126, and are passed through a pair of holding guide rolls 121, 122 to clean the waste cotton yarn ends 123, 124; and a motor 129, which is disposed in support On the back side of the plate 72, the waste cotton yarn recovery rolls 127, 128 are rotationally driven.

The pair of holding guide rollers 121 and 122 arrange the mask film 18' between the cleaning waste cotton yarns 123 and 124 while integrally holding them. Further, by the rotation, the mask film 18' and the cleaning waste cotton yarns 123, 124 can be introduced from the side of the collecting portion on the side where the guide roller 75 is disposed, and the supply can be led to the side on which the guide roller 74 is disposed. Side.

In the example shown in the figure, when the electrode material 15 is applied once per pair of the substrate surface 11, for example, the holding guide rollers 121 of the pair of holding guide rollers 121 and 122 are rotated by a specific amount by the motor 77'. The mask film 18' of the mask portion 19 is recovered by a specific amount to the side of the recovery portion on the side where the guide roller 75 is disposed, and the mask portion corresponding to the specific amount is led out from the supply portion side on the side where the guide roller 74 is disposed. 18' and placed in the mask portion 19. At this time, the cleaning waste yarn ends 123 and 124 are also led out from the waste cotton yarn supplying rollers 125 and 126 by a pair of holding guide rollers 121 and 122, and are led out to the waste cotton yarn collecting rollers 127 and 128 side.

The waste cotton yarn retracting rollers 127, 128 are now rotated and cleaned by the driving of the motor 129 The waste cotton yarn ends 123 and 124 are discharged from the pair of holding guide rollers 121 and 122 by an amount corresponding to each other, and the cleaning waste cotton yarn ends 123 and 124 which are led out from the pair of holding guide rollers 121 and 122 are recovered without being supplied. The mask film 18' on the side is in contact.

That is, the wiring forming apparatus 1-3 according to the present embodiment corresponds to the reuse of the mask portion 19 formed as the annular mask film 18', so that the cleaning mechanism 120 is used for the mask film 18'. When the guide rollers 121 and 122 are held between the holding rollers 121 and 122, the cleaning waste cotton yarns 123 and 124 are pressed against the mask film 18' while being integrally held by the mask film 18', and the wiper remains on the mask film 18'. The electrode material 15 or the composition of the dirt on the surface of the film 18'.

Further, in the wiring forming apparatus 1-3 of the present embodiment, the wiping structure using the cleaning waste cotton yarn ends 123 and 124 is used as the cleaning mechanism 120. However, the cleaning mechanism 120 is not limited thereto, and the cleaning mechanism 120 can be cleaned by using the cleaning liquid. Various film cleaning mechanisms such as organizations.

<Fourth embodiment>

The wiring forming apparatus 1-4 of the present embodiment is the wiring forming apparatus 1-1 of the first embodiment, and the mask unit 71 is attached and fixed to the unit support table 81 of the individual mask unit, and the mask unit elevating mechanism is provided. The 90 and mask unit moving mechanism 95 becomes an individual mask unit.

Fig. 12 is a plan view showing the wiring forming apparatus of the fourth embodiment of the present invention.

In the wiring forming apparatus 1-4 of the present embodiment, the mask unit 71 is attached and fixed to the unit support table 81 of the individual mask unit, and the mask unit elevating mechanism 90 and the mask unit moving mechanism 95 are associated with the individual mask unit. And set.

According to the present embodiment, the number of the mask unit elevating mechanism 90 and the mask unit moving mechanism 95 is increased. However, since the mask unit moving mechanism 95 is provided in the individual mask unit 71, the semiconductor substrate to be coated is applied. The size or shape of 10 can correspond to a wider range.

<Fifth Embodiment>

The wiring forming apparatus 1-5 of the present embodiment and the wiring forming apparatus 1 of the first embodiment The difference is the specific amount m of the recovery and derivation of the mask film 18 of the mask unit 71 shown in FIG.

In the wiring forming apparatus 1-5 of the present embodiment, the configuration of each of the wiring forming apparatuses 1-5 other than the mask unit 71 or the actuation control thereof and the wiring forming apparatus 1-1 of the first embodiment are provided. The same or similar components are denoted by the same reference numerals, and their description will be omitted.

Fig. 13 is an explanatory view showing an embodiment of a mask film of a mask portion of a wiring forming apparatus according to a fifth embodiment of the present invention, for a specific amount of recovery and derivation.

13(A) to (C) sequentially show the moving position state of the mask film 18 applied for the first to third times when the coating is repeated.

As shown in Fig. 13(A), after the coating operation of the electrode material 15 with respect to the coating operation of the semiconductor substrate 10-1 which is the target of the first finger wiring 16, after the coating operation is completed, The mask film recovery process shown in step S60 is recovered to the position shown in Fig. 13(B).

Here, when there is no obstacle due to the relationship between the line thickness of the finger wiring 16 of the wiring installation region B of the substrate surface 11 or the formation interval (wiring pitch) of the finger wiring 16, it can be compared with FIG. 13(B). The mask film recovery amount m (= m2 < m1) of the mask portion 19 having a smaller interval length is applied, and the coating of the electrode material 15 with respect to the semiconductor substrate 10-2 which is the target of forming the next finger wiring 16 is performed. operation.

In this case, at the time of the coating operation of the electrode material 15 of the next semiconductor substrate 10-2, the mask film 18 of the electrode material 15 is adhered to the coating operation of the electrode material 15 with respect to the first semiconductor substrate 10-1. The film portion remains in a portion overlapping the semiconductor substrate 10-2, but the adhered electrode material 15 is located at a position that does not overlap with the finger wiring 16 formed on the substrate surface 11 of the semiconductor substrate 10-2.

Further, as shown in FIG. 13(C), even in the coating operation of the electrode material 15 of the next semiconductor substrate 10-3, the first and second electrode materials 15 are attached to each other. The electrode material 15 on the mask film 18 and the finger wiring 16 formed on the substrate surface 11 of the semiconductor substrate 10-3 are also located at positions that do not overlap.

As described above, in the wiring forming apparatus 1-5 of the present embodiment, the finger wirings 16 of the semiconductor substrate 10 on which the electrode material 15 is applied next are placed in the insulating state in which the electrode adhesion positions on the mask film 18 are kept in an insulated state. By setting the mask film recovery amount m in the middle, the mask film recovery amount m can be effectively reduced, and the cost reduction effect can be achieved.

Although the embodiments of the wiring forming apparatus of the present invention have been described above, the present invention is not limited thereto. For example, the form or number of mask units can be variously modified depending on the arrangement form or orientation of the mask portion.

All publications, patents and patent applications cited in this specification are hereby incorporated by reference in their entirety herein

1-1‧‧‧Wiring forming device

10‧‧‧Semiconductor substrate (substrate)

15‧‧‧Electrode material (coating solution)

20‧‧‧Substrate mounting table

23‧‧‧Loading board

24‧‧‧Substrate mounting surface

30‧‧‧Substrate transport mechanism

31‧‧‧Device base

32‧‧‧Substrate transfer table

40‧‧‧ Coating nozzle

50‧‧‧Nozzle lifting mechanism

51‧‧‧Nozzle Support Frame

53‧‧ ‧ Beam Department

54‧‧‧Nozzle lifting platform

60‧‧‧ Coating liquid supply mechanism

61‧‧‧Electrode material trough

62‧‧‧ slot body

63‧‧‧ supply port

64‧‧‧ Pressure adjustment port

65‧‧‧Pipe

66‧‧‧Regulator

67‧‧‧Valves

70‧‧ ‧ masking mechanism

71‧‧‧ mask unit

90‧‧‧ Mask unit lifting mechanism

91‧‧‧Support platform

95‧‧‧mask unit moving mechanism

96‧‧‧unit mobile station

100‧‧‧Control device

X‧‧‧ direction

X‧‧‧ directions

Y‧‧‧ direction

Y‧‧‧ direction

Z‧‧‧direction

Claims (5)

A wiring forming apparatus comprising: a substrate mounting table on which a substrate is placed; and a coating nozzle that ejects a coating liquid containing a wiring material to a substrate surface of a substrate placed on the substrate mounting table; and a relative moving mechanism The coating nozzle and the substrate mounting table are relatively moved relative to the other; and the masking unit is disposed to be relatively movable with respect to the coating nozzle together with the substrate mounting table; and the coating nozzle includes a plurality of a discharge port arranged in a direction crossing a relative moving direction by the relative moving mechanism; and the mask unit includes a mask film which is placed on the substrate of the substrate mounting table and uses the relative moving mechanism An edge portion intersecting with the direction of the plurality of ejection ports of the coating nozzle intersecting with the moving direction, and passing through a portion of the plurality of ejection ports by the relative movement of the relative moving mechanism a coating placed between the discharge port and the portion of the discharge port to prevent ejection from the discharge port of the portion Adhered to the edge portion. The wiring forming device of claim 1, wherein the mask film is formed of a strip-shaped mask film; and the mask unit comprises: a mask film supply portion, wherein the strip mask film is not attached a tape length portion of the coating liquid; a mask film collecting portion that is disposed with a tape length portion to which the coating liquid adheres; and a mask film moving mechanism that applies the band shape from the mask film supply portion Cover The strip length portion of the film film is led to a specific amount so as to be newly interposed between the edge portion and the portion of the ejection port, and the strip mask which has been interposed between the edge portion and the portion of the ejection port The tape length portion of the film film is introduced into the above-mentioned mask film collecting portion. The wiring forming apparatus of claim 2, wherein the mask film collecting portion is provided with a coating liquid recovery mechanism that recovers a mask attached to a strip length portion of the strip mask film introduced by the mask film moving mechanism Coating solution on the surface of the film. The wiring forming device of claim 1, wherein the mask film is formed of a ring-shaped mask film; and the mask unit comprises: a mask film supply portion, wherein the strip mask film is not attached a tape length portion of the coating liquid; a mask film collecting portion that is disposed with a tape length portion to which the coating liquid is adhered; and a mask film moving mechanism that masks the band film from the mask film supply portion The strip length portion of the film film is led to a specific amount so as to be newly interposed between the edge portion and the ejection opening of the portion, and the strip mask which has been interposed between the edge portion and the portion of the ejection port a tape length of the film film is introduced into the mask film collecting portion; and a mask film cleaning mechanism is provided in the tape film from the mask film collecting portion to the mask film supplying portion. On the way back, clean the strip mask film. The wiring forming device of claim 2 or 4, wherein the mask film moving mechanism is formed as a band of the strip mask film interposed between the edge portion and the portion of the ejection opening as the specific amount a strip-shaped coating region coated with a coating liquid by ejecting a coating liquid from the ejection port of the portion, and is taken out from the mask film supply portion and introduced into the mask so as to be located between the ejection ports of the portion Film recycling department.