WO2014080819A1

WO2014080819A1 - Wiring forming apparatus

Info

Publication number: WO2014080819A1
Application number: PCT/JP2013/080663
Authority: WO
Inventors: 智也三澤; 靖佐野; 正志西亀
Original assignee: 株式会社日立ハイテクノロジーズ
Priority date: 2012-11-22
Filing date: 2013-11-13
Publication date: 2014-05-30
Also published as: TW201431097A; JP2014107285A

Abstract

The present invention pertains to a wiring forming apparatus (1) wherein, by using a nozzle (40) having a plurality of discharge ports (44) arranged in a direction that intersects the direction of relative movement of a substrate (10), and simultaneously discharging an electrode material (a coating liquid) (15) from the discharge ports (44), a large number of fine electrodes (16) that extend in the direction of relative movement are simultaneously formed on the substrate surface (11) in a single relative movement between the nozzle (40) and the substrate (10). A mask unit (71), which prevents the electrode material (15) from adhering, is disposed on the periphery (12) of the substrate (10), which intersects the direction of relative movement and also intersects the arrangement direction of the plurality of discharge ports (44) formed in the nozzle (40). A wiring forming apparatus that enables wiring patterns to be formed in proper quantities on the substrate and enables defects to be reduced can thus be provided.

Description

Wiring forming device

The present invention relates to a wiring forming apparatus for forming a wiring pattern on a substrate. In particular, the present invention relates to a wiring forming apparatus suitable for use in forming an electrode pattern in a solar cell element.

In JP 2005-353851 A (Patent Document 1), as an example of an element in which a wiring pattern is formed on a substrate, a pair of substrate surfaces of a semiconductor substrate formed by bonding a p-type and an n-type semiconductor layer are provided. A single-sided light receiving solar cell element in which a light receiving surface electrode (front surface electrode) and a back surface electrode are formed is described. In addition, Patent Document 1 describes that a screen printing method is used as a method of forming these electrode patterns on the substrate surface.

Japanese Patent Laid-Open No. 2011-198982 (Patent Document 2) discloses, as a method for forming an electrode pattern in a solar cell element, a paste-like coating liquid (electrode material) containing a pattern material (wiring material) from a nozzle continuously. And a method of drawing an electrode pattern on a substrate surface. In addition, in Patent Document 2, in particular, when a large number of thin electrodes called finger electrodes are formed on a substrate, a plurality of fluid electrodes communicated with the liquid storage space along the direction intersecting the relative movement direction with the substrate. By using a nozzle in which the discharge ports are arranged and discharging the electrode material from each discharge port all at once, the relative movement in one direction between the nozzle and the substrate extends along the relative movement direction. A method for forming a large number of thin electrodes at once is described.

Japanese Patent Laid-Open No. 2005-353851 JP 2011-198982 A

Incidentally, in the solar cell element described in Patent Document 1, a rigid thin plate substrate such as a silicon wafer is used as a semiconductor substrate on which an electrode pattern is formed. For this reason, during screen printing of the electrode pattern on the semiconductor substrate, the semiconductor substrate may be broken by the printing pressure of the squeegee, which causes a decrease in yield in the manufacture of solar cell elements. Further, the screen printing plate in which the electrode pattern is imitated needs to be periodically cleaned and replaced, which causes a cost increase.

On the other hand, in the method for forming an electrode pattern in a solar cell element described in Patent Document 2, an electrode pattern can be formed with a nozzle in a non-contact state with respect to the substrate surface. Substrate cracking does not occur. In addition, costs resulting from cleaning and replacement of special consumables such as screen printing plates can be reduced.

However, on the other hand, in the electrode pattern forming method described in Patent Document 2, the discharge control of the electrode material from each discharge port is batch control in units of nozzles. The length of the wiring pattern of the finger electrode is the same corresponding to the relative movement amount between the nozzle and the substrate.

In addition, a wafer obtained by slicing a thin silicon ingot is used to create a semiconductor substrate for a solar cell element. In this case, the shape of the wafer can be made square when a polycrystalline silicon wafer is used, but when a single crystal silicon wafer is used, the wafer becomes a circular wafer in terms of manufacturing a silicon ingot for cutting out the wafer. Therefore, when a single crystal silicon wafer is used as a semiconductor substrate of a solar cell element, a useless gap is made as small as possible when the solar cell elements are arranged on a panel while cutting a substrate having a large area from a circular wafer. Therefore, a circular wafer is used after being processed into an octagonal substrate in which the four corners of the rectangle are slightly cut off.

Therefore, when the finger electrode pattern is formed on such an octagonal semiconductor substrate using the electrode pattern forming method described in Patent Document 2, the discharge of the electrode material from each discharge port of the nozzle is performed. Since the control is batch control in units of nozzles, finger electrodes cannot be formed on the octagonal semiconductor substrate surface without excess or deficiency. If the finger electrodes are formed on the octagonal semiconductor substrate surface without excess or deficiency, the electrode material is also discharged to the edge portion of the four corners of the rectangle and the peripheral device portion. As a result, the electrode material for forming the finger electrode may adhere to the electrode pattern or the semiconductor layer on the opposite side, which may cause a failure such as a short circuit. It is conceivable that the discharge control of the electrode material from each discharge port of the nozzle is controlled individually for each discharge port instead of batch control in units of nozzles, but in that case, the structure of the nozzle becomes complicated and the size increases. The discharge control of the electrode material is also complicated.

Therefore, the present invention uses a nozzle in which a plurality of discharge ports are arranged along the direction intersecting the moving direction of the substrate, and discharges the electrode material from each discharge port at the same time. The special substrate such as the octagonal semiconductor substrate of the solar cell element described above is related to a wiring forming apparatus that simultaneously forms a number of thin electrodes extending along the relative movement direction on the substrate surface by one relative movement of Even so, it is an object of the present invention to provide a wiring forming apparatus capable of forming a wiring pattern on a substrate without excess and deficiency and reducing defects.

In this case, the special substrate is not limited to an octagonal substrate, and is related to the relative movement between the nozzle and the substrate, intersects with the relative movement direction, and the arrangement direction of the plurality of discharge ports formed in the nozzle. Substrates having intersecting edge portions and substrates having edge portions that cannot pass through a plurality of discharge ports formed in the nozzle at the same time and do not follow the relative movement direction between the nozzle and the substrate are applicable.

In order to solve the above problems, the present invention uses a nozzle in which a plurality of discharge ports are arranged along a direction intersecting the relative movement direction with respect to the substrate, and simultaneously supplies an electrode material (coating liquid) from each discharge port. In the wiring forming apparatus that simultaneously forms a plurality of thin electrodes extending along the relative movement direction on the substrate surface by one relative movement between the nozzle and the substrate, the relative movement direction And a mask unit that prevents the electrode material from adhering to the edge of the substrate that intersects with the arrangement direction of the plurality of ejection openings formed in the nozzle.

More specifically, the wiring forming apparatus according to the present invention discharges the coating liquid containing the wiring material to the substrate mounting table on which the substrate is mounted and the substrate surface of the substrate mounted on the substrate mounting table. A coating nozzle; a relative movement mechanism that relatively moves one of the coating nozzle and the substrate mounting table with respect to the other; and a mask unit that is relatively movable with the substrate mounting table with respect to the coating nozzle. The coating nozzle has a plurality of ejection openings arranged along the direction intersecting the relative movement direction by the relative movement mechanism, and the mask unit is a relative of the substrate placed on the substrate placement table by the relative movement mechanism. When the edge portion that intersects the moving direction and also intersects the arrangement direction of the plurality of discharge ports in the coating nozzle passes under a part of the plurality of discharge ports by relative movement by a relative movement mechanism, It is interposed between the discharge port, wherein the coating liquid discharged from said portion of the discharge port is provided with a mask film to prevent sticking to the edge portion.

In addition, the mask film is formed of a long band-shaped mask film, and the mask unit includes a mask film supply unit in which a band-length portion to which the coating liquid for the band-shaped mask film is not attached and the application of the band-shaped mask film A predetermined amount of the band length portion of the band-shaped mask film is derived from the mask film recovery unit where the band length portion to which the liquid is attached is arranged, and the mask film supply unit, and between the edge portion and a part of the discharge ports. And a mask film moving mechanism for introducing a predetermined length of the band length portion of the belt-shaped mask film already interposed between the edge portion and a part of the discharge ports into the mask film collecting portion. It is characterized by being.

This specification includes the contents described in the specification and / or drawings of Japanese Patent Application No. 2012-256609 which is the basis of the priority of the present application.

According to the present invention, the relative movement between the nozzle and the substrate, the substrate having an edge that intersects the relative movement direction and also intersects the arrangement direction of a plurality of discharge ports formed in the nozzle, A wiring pattern can be formed on the substrate without excess or deficiency even on a substrate that cannot pass through the multiple ejection openings formed in the nozzle at the same time and has a peripheral portion that does not follow the relative movement direction between the nozzle and the substrate. It is possible to reduce defects.

Issues, configurations, and effects other than those described above will be clarified by the following description of embodiments.

It is a plane lineblock diagram of the wiring formation device concerning a 1st embodiment of the present invention. FIG. 2 is a view of the wiring forming apparatus shown in FIG. 1 as viewed in the direction of arrows YY described in FIG. FIG. 2 is a configuration diagram of the wiring forming apparatus shown in FIG. 1 viewed in the direction of arrows XX described in FIG. It is explanatory drawing of the internal structure of a coating nozzle. It is explanatory drawing of the substrate surface of the semiconductor substrate of application | coating object. It is a top view of the board | substrate mounting base part of the wiring formation apparatus in which the mask mechanism was installed. FIG. 7 is a front view of the mask unit of the mask mechanism as viewed in the direction of arrow VII-VII in FIG. 6. It is a flowchart of the Example of the formation process of the finger wiring by the wiring formation apparatus of this Embodiment. It is explanatory drawing about one Example related to the mask film of a mask part, collection | recovery of the predetermined amount, and derivation | leading-out. It is a front view of the mask unit in the wiring formation apparatus which concerns on the 2nd Embodiment of this invention. It is a front view of the mask unit in the wiring formation apparatus which concerns on the 3rd Embodiment of this invention. It is a plane block diagram of the wiring formation apparatus which concerns on the 4th Embodiment of this invention. It is explanatory drawing about one Example of collection | recovery and derivation | leading-out of predetermined amount regarding the mask film of the mask part in the wiring formation apparatus which concerns on the 5th Embodiment of this invention.

Hereinafter, embodiments of a wiring forming apparatus according to the present invention will be described with reference to the drawings. In the description, in the manufacture of solar cell elements, a wiring device that forms a finger electrode on the substrate surface of a semiconductor substrate will be described as an example, but a wiring device that forms a bus bar electrode across the finger electrode may be used. The wiring forming apparatus is not limited to the manufacturing of the solar cell element, and may be a wiring forming apparatus that simultaneously forms a large number of wiring patterns extending along a predetermined direction on the substrate surface.

<First Embodiment>
FIG. 1 is a plan view of the wiring forming apparatus according to the first embodiment of the present invention.

FIG. 2 is a view of the wiring forming apparatus shown in FIG. 1 as viewed in the direction of arrows YY described in FIG.

FIG. 3 is also a configuration diagram viewed in the direction of arrows XX described in FIG.

As shown in FIGS. 1 to 3, the wiring forming apparatus 1-1 according to the present embodiment includes a substrate mounting table 20, a substrate transport mechanism 30, a coating nozzle 40, a nozzle lifting mechanism 50, and a coating liquid supply. A mechanism 60, a mask mechanism 70, and a control device 100 are included.

As shown in FIGS. 2 and 3, the substrate mounting table 20 has a top surface to which the electrode material (coating liquid) 15 is applied on the column portion 22 that is erected and fixed at the center of the surface of the disk-shaped base 21. A mounting plate 23 on which the semiconductor substrate (substrate) 10 is mounted is attached and fixed.

The substrate mounting table 20 has a plate-shaped base 21 mounted and fixed to a substrate transport stage 32 of the substrate transport mechanism 30 with the substrate mounting surface 24 of the mounting plate 23 horizontal.

The substrate transport mechanism 30 includes a substrate transport stage 32 installed on the apparatus base 31 and extending along the substrate transport direction (x-axis direction). When the substrate transport mechanism 30 moves and operates the substrate transport stage 32 by driving a driving source (not shown) (for example, a motor), the substrate transport stage 32 is extended and extended from the substrate transport stage 32. The semiconductor substrate 10 which moves along the direction (x-axis direction) and is placed and held on the substrate placement surface 24 is transported. The substrate transport mechanism 30 is not limited to the transport mechanism including the substrate transport stage 32 described above, and may be any transport mechanism that can linearly move the substrate mounting table 20.

Further, the substrate transport mechanism 30 is configured to move and displace the substrate mounting table 20 on a horizontal plane along the y-axis direction (width direction of the substrate transport stage 32) perpendicular to the transport direction (x-axis direction), A rotation mechanism that rotates and displaces the substrate mounting table 20 in a horizontal plane defined by the x-axis and the y-axis may be provided. According to the moving mechanism, the relative position of the semiconductor substrate 10 in the y-axis direction with respect to the coating nozzle 40 when the semiconductor substrate 10 passes below the coating nozzle 40 can be adjusted. The relative orientation of the semiconductor substrate 10 with respect to the coating nozzle 40 when the semiconductor substrate 10 passes below the coating nozzle 40 can be adjusted.

In the middle of the transfer section along the extending direction (x-axis direction) of the substrate transfer stage 32, the coating nozzle 40 is supported so as not to interfere with the transfer of the semiconductor substrate 10 placed and held on the substrate mounting table 20. A nozzle support frame 51 is installed. In the illustrated example, the nozzle support frame 51 has a column part 52 and a beam part 53, and the semiconductor substrate 10 mounted and held on the substrate mounting table 20 is located on the side of the column part 52 and below the beam part 53. A passage space in the width direction (y-axis direction) and the height direction (z-axis direction) is secured.

A nozzle raising / lowering mechanism 50 including a nozzle raising / lowering stage 54 extending in the height direction (z-axis direction) is installed on the beam portion 53 of the nozzle support frame 51. The application nozzle 40 is attached and fixed to the nozzle raising / lowering stage 54 with its discharge port 44 facing downward.

When the nozzle elevating mechanism 50 moves and operates the nozzle elevating stage 54 by driving a drive source (not shown) (for example, a motor), the application nozzle 40 attached and fixed to the nozzle elevating stage 54 extends in the extending direction of the nozzle elevating stage 54. It moves along (z-axis direction) and is configured to move the application nozzle 40 up and down. The nozzle raising / lowering mechanism 50 includes the discharge port 44 of the coating nozzle 40 and the substrate surface of the semiconductor substrate 10 when the semiconductor substrate 10 placed and held on the substrate mounting table 20 by the substrate transport mechanism 30 passes below the coating nozzle 40. The distance in the height direction (z-axis direction) from 11 is adjusted by moving the application nozzle 40 up and down. The nozzle raising / lowering mechanism 50 arranges the coating nozzle 40 at a height in accordance with the set gap between the two when the electrode material 15 is applied. The nozzle raising / lowering mechanism 50 is not limited to the raising / lowering configuration provided with the nozzle raising / lowering stage 54 described above, and may be any nozzle moving mechanism that can move the application nozzle 40 up and down.

FIG. 4 is an explanatory diagram of the internal structure of the coating nozzle.

The coating nozzle 40 is configured such that an introduction port 43 for the electrode material 15 and a plurality of discharge ports 44 are provided in a nozzle body 41 in which a cavity (a liquid storage space) 42 is formed. The coating nozzle 40 discharges the electrode material 15 stored in the cavity 42 through the introduction port 43 from each discharge port 44, and the substrate mounting table 20 moves and passes under the nozzle by the substrate transport mechanism 30. The electrode material 15 is applied to the substrate surface 11 of the semiconductor substrate 10 placed and held on the substrate placement surface 24 of the table 20.

At that time, in one relative movement between the coating nozzle 40 and the semiconductor substrate 10 along the substrate conveyance direction (x-axis direction), the substrate surface 11 of the semiconductor substrate 10 is moved in the relative movement direction (x-axis direction). A plurality of discharge ports 44 are formed on the lower surface of the nozzle body 41 by the number of finger wires 16 to be formed so that a plurality of thin electrodes extending along the lines, that is, finger wires (finger electrodes) 16 of the solar cell element can be formed. These are provided in a row at intervals corresponding to the formation interval (wiring pitch) of the finger wirings 16.

In the illustrated example, the application nozzle 40 has the plurality of discharge ports 44 arranged in the downward direction so that the arrangement direction of the plurality of discharge ports 44 is along the width direction (y-axis direction) of the substrate transport stage 32. Thus, the nozzle body 41 is attached and fixed to the nozzle lifting / lowering stage 54 of the nozzle lifting / lowering mechanism 50.

The coating liquid supply mechanism 60 supplies an electrode material (coating liquid) 15 to the coating nozzle 40, an electrode material tank 61 that stores the electrode material 15, and a valve that performs supply / supply stop of the electrode material 15 to the coating nozzle 40. 67.

The electrode material tank 61 has a sealed structure in which a supply port 63 and a pressure adjustment port 64 are formed in a tank body 62 in which a tank chamber in which the electrode material 15 is stored is formed.

The piping 65 which connects between the supply port 63 and the inlet 43 of the application nozzle 40 is connected. A high pressure gas is supplied to the pressure adjusting port 64 via a regulator 66, the pressure (back pressure) in the tank chamber is controlled by the regulator 66, and the electrode material 15 supplied to the application nozzle 40 via the pipe 65 is supplied. The speed is controlled, and the discharge amount (discharge speed) of the electrode material 15 discharged from each discharge port 44 of the application nozzle 40 can be adjusted.

The valve 67 is installed in the middle of the pipe 65, for example, and the supply / stop of the supply of the electrode material 15 to the application nozzle 40 can be performed by opening / closing the valve 67. By performing ON / OFF control of the valve 67 in accordance with the lower passage of the substrate mounting table 20 on which the semiconductor substrate 10 is mounted and held, the application / application stop of the electrode material 15 to the substrate surface 11 can be performed.

In the illustrated example, the coating liquid supply mechanism 60 is configured to pump the electrode material 15 with the high-pressure gas from the high-pressure gas source, and to open / close the valve 67 to apply the electrode material 15 to the cavity 42 of the coating nozzle 40. According to the supply control, the discharge / discharge stop of the electrode material 15 from each discharge port 44 of the coating nozzle 40 is controlled. However, the present invention is not limited to this, and the cylinder pump, the mono pump, the piston pump, the plunger pump, and the diaphragm pump are not limited thereto. Various liquid feed pumps such as a reciprocating pump can be used as the coating liquid supply mechanism 60 for control.

The mask mechanism 70 is a semiconductor mounted and held on the substrate mounting table 20 that intersects the substrate transport direction (x-axis direction) by the substrate transport mechanism 30 and also intersects the arrangement direction of the plurality of ejection ports 44 in the coating nozzle 40. The electrode material 15 discharged from the discharge port 44 of the application nozzle 40 is prevented from adhering to the edge portion 12 of the substrate 10.

Here, in describing the details of the mask mechanism 70, the substrate surface 11 of the semiconductor substrate 10 on which the finger wiring 16 is formed by the wiring forming apparatus 1-1 according to the present embodiment in connection with the manufacture of the solar cell element. 5 will be described.

FIG. 5 is an explanatory view of the substrate surface of the semiconductor substrate to be coated.

In the illustrated example, the substrate surface 11 of the semiconductor substrate 10 has an octagonal shape with four corners cut out.

Here, when the finger wiring 16 is formed on the substrate surface 11, for example, occurrence of defects as a solar cell element such as a short circuit between the front surface electrode and the back surface electrode formed on the front surface and the back surface of the semiconductor substrate 10, respectively. In order to prevent this, the finger wiring (finger electrode) 16 is surrounded by the non-wiring installation area A, leaving a non-wiring installation area A in which the finger wiring 16 having a predetermined width is not formed at the periphery of the substrate surface of the semiconductor substrate 10. It is formed in the inner wiring installation area B.

The finger wiring (finger electrode) 16 is formed by the wiring forming device 1-1 in the boundary portion 10f between the non-wiring forming area A and the wiring forming area B on the front side in the transport direction in the substrate transporting direction (x-axis direction). When passing, the discharge of the electrode material 15 from the discharge port 44 of the coating nozzle 40 is started. When the boundary portion 10r between the non-wiring formation area A and the wiring formation area B on the rear side in the transport direction passes under the nozzle, the discharge of the electrode material 15 from the discharge port 44 of the coating nozzle 40 is finished, thereby completing the substrate surface. A plurality of finger wirings (finger electrodes) 16 extending along the substrate transport direction (x-axis direction) are formed in the wiring forming region B of 11.

By the way, like the octagonal semiconductor substrate 10 in which the four corners of the quadrangle shown in the figure are cut, the substrate 10 is arranged in the substrate transport direction (x-axis direction) and the arrangement direction of the plurality of discharge ports 44 of the coating nozzle 40 (y-axis direction). ), The discharge of the electrode material 11 from each discharge port 44 of the application nozzle 40 is collectively controlled in units of nozzles by the valve 67. The finger wiring 16 cannot be formed in the wiring forming region B without excess or deficiency. For example, when priority is given to preventing protrusion, the region width along the substrate transport direction (x-axis direction) of the non-wiring formation region A before and after the transport direction is the region width along the width direction (y-axis direction) of the substrate transport stage 32. Will be bigger than. Also, when trying to match the area width along the substrate conveyance direction (x-axis direction) of the non-wiring formation area A before and after the conveyance direction with the area width along the width direction (y-axis direction) of the substrate conveyance stage 32, The electrode material 11 will also adhere to the peripheral vicinity C of the edge 12.

The mask mechanism 70 prevents the electrode material 11 from adhering to the peripheral edge portion 12, preferably the peripheral vicinity portion C including the non-wiring formation region A portion of the peripheral edge portion 12. Even in the case of the semiconductor substrate 10, the finger wirings (finger electrodes) 16 are formed in the wiring forming region B without excess or deficiency.

FIG. 6 is a plan view of the substrate mounting table portion of the wiring forming apparatus in which the mask mechanism is installed.

FIG. 7 is a front view of the mask unit of the mask mechanism as viewed in the direction of arrows VII-VII in FIG.

As shown in FIGS. 1 to 3 and 6, the mask mechanism 70 includes a mask unit 71, a mask unit lifting mechanism 90, and a mask unit moving mechanism 95 (not shown in FIG. 6). Yes.

As shown in FIG. 7, in the mask unit 71, a supply roller 73, guide

rollers

74 and 75, and a collection roller 76 are rotatably supported on the front surface of the support plate 72, and the collection roller 76 is provided on the back surface of the plate. The motor 77 can be rotated. Thereby, the long strip-shaped mask film 18 wound around the supply roller 73 is guided by the

guide rollers

74 and 75 by the drive of the motor 77, and then wound around the collection roller 76. It has become. The lead-out amount (drawing length) of the mask film 18 from the supply roller 73 is adjusted according to the driving / stopping of the motor 77. In addition, in the illustrated example, the

guide rollers

74 and 75 are provided apart from each other with an interval that is appropriately larger than the dimension L of the edge portion 12 of the semiconductor substrate 10 illustrated in FIG. A length portion of the mask film 18 longer than the length L of the edge portion 12 is stretched between the

guide rollers

74 and 75 to form a mask portion 19.

For example, a long strip-like PET (Polyethylene terephthalate) film is used for the mask film 18. In addition to the PET film, resin films such as nylon, vinyl chloride, and polyester, and metal films such as stainless steel, aluminum, and copper can also be used. Moreover, the mask film 18 has a width dimension larger than the width dimension W of the non-wiring installation area A of the semiconductor substrate 10 shown in FIG. In the illustrated example, the mask film 18 has a width dimension that can cover the vicinity C of the peripheral edge portion 12 shown in FIG.

The mask unit 71 is provided for each of the edge portions 12 of the semiconductor substrate 10 placed and held on the substrate mounting table 20, and the front portion of the support plate 72 on the mask portion 19 side is opposed to the corresponding edge portion 12. In this way, the height direction (z-axis direction) of the mask portion 19 can be adjusted so as to be close to / separated from the edge portion 12, and the semiconductor substrate 10 to be coated and the substrate transport direction (x-axis direction) ) So as to be integrally movable.

In the case of the wiring forming apparatus 1-1 that forms the finger wiring 16 on the octagonal semiconductor substrate 10, a pair of masks on the front and rear sides in the transport direction on both sides in the width direction (y-axis direction) of the substrate transport stage 32. The unit 71 is attached and fixed to unit support bases 81 located on both sides in the width direction (y-axis direction) of the substrate transport stage 32. The direction of the front portion of each of the pair of mask units 71 in each unit support base 81 is such that it faces the corresponding edge portion 12 of the semiconductor substrate 10 placed and held on the substrate placement surface 24 of the substrate placement table 20. It has been adjusted.

Further, each unit support base 81 is attached and fixed to a unit elevating stage 91 (see FIG. 3) of the mask unit elevating mechanism 90. The mask unit elevating mechanism 90 corresponds to each unit support base 81, and a support base elevating stage 91 is placed on the support base 82 provided below each unit support base 81 in the height direction (z It is installed and fixed so as to extend along the axial direction. When the mask unit elevating mechanism 90 moves and operates the support platform elevating stage 91 by driving a drive source (not shown) (not shown), the unit support platform 81 attached and fixed to the support platform elevating stage 91 is moved in the height direction ( The mask portion 19 of each mask unit 71 is moved up and down by moving in the z-axis direction).

In addition, each support base 82 is attached and fixed to a unit moving stage 96 (see FIGS. 1 and 2) of the mask unit moving mechanism 95. The mask unit moving mechanism 95 is arranged so that the unit moving stage 96 of the substrate transfer stage 32 is moved to the plate-like base 21 of the substrate mount 20 so that it can move integrally with the substrate mount 20 in the substrate transfer direction (x-axis direction). It is installed and fixed so as to extend along the width direction (y-axis direction). When the unit moving stage 96 is moved by driving a driving source (for example, a motor) (not shown), the mask unit moving mechanism 95 moves the support base 82 attached and fixed to the unit moving stage 96 in the width direction (y-axis direction). ) And the mask portion 19 of each mask unit 71 is configured to be close to / separated from the edge portion 12 of the semiconductor substrate 10 mounted and held on the substrate mounting surface 24 of the substrate mounting table 20. It has become.

Thus, in the illustrated example, the pair of mask units 71 on the front side and the rear side in the width direction (y-axis direction) on both sides in the width direction (y-axis direction) of the substrate transfer stage 32 are united by the unit support base 81 common to the units. The mask portion 19 can be moved up and down by a common mask unit lifting mechanism 90 and mask unit moving mechanism 95 so that the mask portion 19 can approach / separate from the edge 12 of the semiconductor substrate 10. In the illustrated example, a pair of mask units 71 on the both sides in the width direction (y-axis direction) of the substrate transfer stage 32 are attached and fixed to a unit support base 81 common to the units. However, a configuration in which a pair of mask units 71 on both sides in the width direction (y-axis direction) of the substrate transfer stage 32 on the front side and the rear side in the transfer direction of the substrate transfer stage 32 are attached and fixed to a unit support base common to the units. However, in the same manner, the mask portion 19 can be moved up and down so as to be close to / separated from the edge portion 12 of the semiconductor substrate 10.

The control device 100 is constituted by a microcomputer or the like. The control device 100 executes the wiring formation program stored in the memory based on the recipe set and input in advance, so that the substrate mounting table 20, the substrate transport mechanism 30, the coating nozzle 40, the nozzle lifting mechanism 50, the coating liquid supply The operation of each part of the device such as the mechanism 60 and the mask mechanism 70 is controlled.

Next, according to the wiring forming apparatus 1-1 having the above-described configuration, an example of the processing for forming the finger wiring 16 on the semiconductor substrate 10 based on the operation control for each part of the control device 100 is described. This will be described with reference to FIG.

FIG. 8 is a flowchart of an example of finger wiring formation processing by the wiring forming apparatus of the present embodiment.

In the description, in the initial state, the wiring forming device 1-1 is configured so that the mask mechanism 70 does not overlap the application target semiconductor substrate 10 in the height direction (z-axis direction) by the operation of the mask unit moving mechanism 95 in advance. In addition, the mask unit 71 of the mask mechanism 70 is located at the end on the separation side in the extending direction of the unit moving stage 96, and the mask lifting / lowering mechanism 90 operates in advance according to the extending direction of the unit lifting stage 91. Assume that it is located at the upper end. Further, it is assumed that the application nozzle 40 is positioned in the upper end portion in the extending direction of the nozzle lifting / lowering stage 54 by the operation of the nozzle lifting / lowering mechanism 50 in advance.

In a state where the mask mechanism 70 is located at the end on the separation side in the extending direction of the unit moving stage 96, the substrate transport direction (x-axis direction) and the substrate transport are used instead of the octagonal semiconductor substrate 10. Even when the rectangular semiconductor substrates having the same length along the width direction (y-axis direction) of the stage 32 are mounted on the substrate mounting table 20, the mask portion 19 of the mask unit 71 is The rectangular semiconductor substrate 10 is not overlapped in the height direction (z-axis direction).

In the wiring forming apparatus 1-1 of the present embodiment, each part of the apparatus is in a standby state as described below by setting the recipe related to the octagonal semiconductor substrate 10 to be coated with respect to such an initialization state. And

The mask unit 71 does not overlap in the height direction (z-axis direction) with the edge 12 of the octagonal semiconductor substrate 10 to which the mask portion 19 is to be applied, by the operation of the mask unit moving mechanism 95. FIG. It is in the state moved and arranged in the horizontal standby position as shown in FIG. Further, the mask unit 71 has a sufficient height so that the mask portion 19 of the mask film 71 does not contact the electrode material 15 applied to the substrate surface 11 in the height direction (z-axis direction) by the operation of the mask unit lifting mechanism 90. It is in a state of being moved and arranged at the height direction standby position. The application nozzle 40 is moved to the discharge work height arrangement by adjusting the gap between the discharge port 44 and the substrate surface 11 of the semiconductor substrate 10 when applying the electrode material 15 by the operation of the nozzle lifting mechanism 50. It has been placed. The substrate mounting table 20 includes the semiconductor substrate 10 mounted and held on the substrate mounting surface 24 in the transfer section along the extending direction (x-axis direction) of the substrate transfer stage 32 by the operation of the substrate transfer mechanism 30. In the height direction (z-axis direction), it is in a state of being moved and arranged at a substrate attachment / detachment movement position that does not overlap the coating nozzle 40.

In step S10, the octagon-shaped semiconductor substrate 10 to be coated is carried from the outside of the apparatus to the substrate mounting surface 24 of the substrate mounting table 20 with respect to the wiring forming apparatus 1-1 in such a standby state.・ It is placed.

Next, in step S20, when the wiring forming apparatus 1-1 detects the placement of the semiconductor substrate 10 on the substrate placement surface 24 by a sensor (not shown), the mask forming mechanism 95 is actuated to control the mask mechanism. 70 is moved from the horizontal standby position as shown in FIG. 6 to the horizontal application work position as shown in FIG.

In the state where the mask mechanism 70 shown in FIG. 1 is moved to the horizontal application work position, the mask unit 71 has the edge portion shown in FIG. 5 of the octagonal semiconductor substrate 10 whose mask portion 19 is the application target. 12 in the vicinity of the peripheral vicinity C in the height direction (z-axis direction).

Next, in step S30, the wiring forming apparatus 1-1 now controls the operation of the mask unit lifting mechanism 90, and the mask mechanism 19 in which the mask portion 19 of the mask unit 71 is moved to the standby position in the height direction is arranged. 70 is lowered so that the mask portion 19 is at a predetermined height direction application work position. Here, the coating operation position in the height direction means that the mask portion 19 of the mask unit 71 is placed and held on the discharge port 44 of the coating nozzle 40 that is moved to the discharge work height arrangement and the substrate placement surface 24. The height position of the surface of the mask film 18 of the mask portion 19 is a certain amount with reference to the height position of the discharge port 44 of the coating nozzle 40. It shall refer to the lower position.

Thus, if masking of the edge part 12 of the semiconductor substrate 10 by the mask film 18 is completed, in step S40, the wiring forming device 1-1 uses the electrode material with respect to the substrate surface 11 of the semiconductor substrate 10. 15 is applied.

In the case of the wiring forming process of this embodiment, since the coating nozzle 40 has already been arranged at the discharge work height arrangement, the wiring forming apparatus 1-1 controls the operation of the substrate transport mechanism 30 and the substrate transport stage 32. The substrate mounting table 20 in a state of being arranged at the substrate attachment / detachment movement position in the transport section along the extending direction (x-axis direction) is moved along the transport direction to pass below the coating nozzle 40. . At that time, the wiring forming device 1-1 opens / closes the valve 67 of the coating liquid supply mechanism 60 (application / stop of application of the electrode material 15) to form non-wiring on the substrate surface 11 shown in FIG. By performing in synchronism with the passage of the front boundary portion 10f / rear boundary portion 10r in the transport direction between the area A and the wiring formation area B, the wiring formation area B on the substrate surface is not excessive and insufficient, and a large number of substrates Finger wirings (finger electrodes) 16 extending along the transport direction (x-axis direction) are collectively formed. Thereafter, if the entire semiconductor substrate 10 passes below the coating nozzle 40 and the substrate mounting table 20 reaches the substrate attachment / detachment movement position in the transfer section along the extending direction (x-axis direction) of the substrate transfer stage 32, The wiring forming apparatus 1-1 controls the operation of the substrate transport mechanism 30 and stops the movement of the substrate mounting table 20.

The substrate attachment / detachment movement position in step S40 may be the movement position of the transfer section on the opposite side by positioning the application nozzle 40 in the center of the substrate attachment / detachment movement position before application in step S10. The substrate mounting table 20 can be moved back and forth in the transport section while passing under the coating nozzle 40, so that the same position as the substrate attachment / detachment movement position before coating can be obtained. In this way, when the substrate attachment / detachment movement position is the same position, the application of the electrode material 15 to the substrate surface 11 by the application nozzle 40 is performed when the substrate mounting table 20 reciprocates and passes below the application nozzle 40. It is good also as a structure to perform, and it is good also as a structure performed when the semiconductor substrate 10 passes the downward direction of the application nozzle 40 by either forward movement or backward movement.

If the application of the electrode material 15 is performed, in step S50, the wiring forming device 1-1 controls the operation of the mask unit lifting mechanism 90 so that the mask portion 19 of the mask unit 71 is applied in a predetermined height direction. The mask mechanism 70 which is moved and arranged so as to be in the position is raised so that the mask portion 19 is in the height direction standby position.

In step S60, the wiring forming apparatus 1-1 controls the operation of the mask unit moving mechanism 95 to move the mask mechanism 70 from the horizontal application work position to the horizontal standby position, and at the same time, each mask unit 71. The motor 77 is controlled to recover the mask film 18 of the mask portion 19 by a predetermined amount to the collecting roller 76 side, and the mask film 18 is led out from the supply roller 73 side corresponding to the predetermined amount, and the mask Located in portion 19. In this case, the mask film 18 is collected and led out by rotating the collection roller 76 by a motor 77, so that the mask film 18 can be masked without bending the mask film between the supply roller 73 and the collection roller 76. A portion 19 is stretched. The recovered amount and the derived amount of the mask film 18 are not affected by the film winding thicknesses of the supply roller 73 and the recovery roller 76, for example, by detecting the rotation amount of the

guide roller

74 or 75 by a sensor (not shown). Can be managed accurately.

In step S70, when the mask mechanism 70 moves to the horizontal standby position, the wiring forming apparatus 1-1 collects a plurality of finger wirings (finger electrodes) 16 that are placed and held on the substrate placement surface 24 in a lump. The semiconductor substrate 10 formed in this manner is carried out of the apparatus from the substrate mounting table 20. Thereby, the formation process of the plurality of finger wirings 16 on the substrate surface 11 of one semiconductor substrate 10 is completed.

As a result, the wiring forming apparatus 1-1 sequentially forms a plurality of finger wirings (finger electrodes) 16 on the semiconductor substrate 10 by repeatedly executing the series of finger wiring forming processes in steps S10 to S70 described above. it can.

FIG. 9 is an explanatory diagram of an example of collection and derivation of a predetermined amount in step S60.

In FIG. 9, the predetermined amount m related to the collection and derivation of the mask film 18 in the mask unit 71 described in step S60 will be described in relation to the semiconductor substrate 10 ′ as the next application target.

In FIG. 9, the semiconductor substrate 10 ′ as the next application target is carried in and placed on the substrate placement surface 24 of the substrate placement table 20 (Step S10), and the mask mechanism 70 is moved to the horizontal application work position ( Step S20) schematically shows a state in which the mask portion 19 is further lowered so as to be in the height direction application work position (Step S30), that is, before the electrode material 15 is applied (Step S40). It shows.

As shown in FIG. 9, the predetermined amount m relating to the recovery and derivation of the mask film 18 in the mask unit 71 described in step S60 is the adhering portion D of the electrode material 15 in the mask portion 19 of the mask film 18 recovered in step S60. However, it does not remain as the mask portion 19 ′ of the mask film 18 with respect to the semiconductor substrate 10 ′, and the adhering portion D is a predetermined amount m1 that does not overlap the peripheral vicinity portion C of the edge portion 12 of the semiconductor substrate 10 ′.

As described above, in the recovery and extraction of the mask film 18 in the mask unit 71, the mask mechanism 70 is set to the height direction standby position at the substrate attachment / detachment movement position where the entire semiconductor substrate 10 passes under the nozzle. Even if the mask film 18 approaches the substrate surface 11 in the height direction because of the gap between the discharge port 44 of the coating nozzle 40 and the substrate surface 11 of the semiconductor substrate 10, since it is performed after being raised. The movement of the mask film 18 with the recovery and derivation does not cause the adjacent finger wirings 16 applied to the substrate surface 11 to be short-circuited.

Further, since the movement of the mask mechanism 70 from the horizontal application work position to the horizontal standby position and the recovery and withdrawal of the mask film 18 are performed simultaneously, the throughput at the substrate attachment / detachment movement position can be shortened.

In the wiring forming apparatus 1-1 according to the present embodiment, the mask film 18 is collected and extracted in the mask unit 71 at the substrate attachment / detachment movement position, and the mask mechanism 19 is placed in the height standby position in the mask mechanism 70. In the case where the height direction application work position is set to a sufficient height direction position that does not come into contact with the substrate surface 11 and the applied electrode material 15. The mask mechanism 70 may remain fixed at the height application work position, and the mask unit elevating mechanism 90 and the elevating process of the mask portion 19 in steps S30 and S50 shown in FIG. 8 may be omitted.

Further, in the wiring forming apparatus 1-1 according to the present embodiment, each time the electrode material 15 is applied to the substrate surface 11 once, the mask film 18 is recovered and led out in step S60. If a sufficient gap is secured between the mask film 18 and the discharge port 44 of the coating nozzle 40 later, the mask film 18 is collected and led out in step S60, not every time the electrode material 15 is applied once. It can also be performed each time coating is performed.

As described above, according to the wiring forming apparatus 1-1 according to the present embodiment, even with the octagonal semiconductor substrate 10 obtained by cutting off the four corners of the quadrangle, the substrate surface 11 serving as the light-receiving surface of the solar cell element. A plurality of finger wirings 16 can be formed in a lump without excess or deficiency, and defects can be reduced.

<Second Embodiment>
In the wiring forming apparatus 1-2 according to the present embodiment, the mask unit 71 attached and fixed to the unit support base 81 is attached to the mask film 18 in the wiring forming apparatus 1-1 according to the first embodiment. The electrode material recovery mechanism 110 for recovering the electrode material 15 is provided.

In the wiring forming apparatus 1-2 according to the present embodiment, the configuration of each part of the wiring forming apparatus 1-2 other than the mask unit 71 and the operation control thereof are described in the wiring forming apparatus 1 according to the first embodiment. Since it is the same as or similar to -1, the same reference numerals are used for the same or similar components, and the description thereof is omitted.

FIG. 10 is a front view of the mask unit in the wiring forming apparatus according to the second embodiment of the present invention.

The electrode material recovery mechanism 110 includes a recovery tool 111 for scraping the electrode material 15 adhering to the mask film 18 recovered to the recovery roller 76 side from the surface of the mask film 18, and an electrode recovered by the recovery tool 111. A recovery container 112 for storing the material 15 is provided.

The collection tool 111 has a spatula-like portion that is thin and flat on the tip side. The collection tool 111 has its spatula portion in close contact with the surface of the mask film 18, and the base end side is pivotally supported by the support plate 72 so as to be swingable. In addition, in the illustrated example, the spatula-like portion on the tip side is brought into close contact with the surface of the mask film 18 wound around the collection roller 76, so that the spatula-like portion is not affected by the winding thickness of the mask film 18. Biasing means (not shown) for pressing against the surface of the mask film 18 is also provided. For example, a spring or the like is used as the biasing means.

The collection container 112 is arranged on the lower side so as to overlap the collection tool 111 in the height direction. The collection container 112 is made of an open top container and is detachably or fixedly attached to the support plate 72 or the unit support base 81.

According to the wiring forming apparatus 1-2 according to the present embodiment, for example, the electrode material 15 attached to the mask film 18 collected toward the collection roller 76, such as the attached portion D shown in FIG. When the film 18 is wound around the collection roller 76, it can be scraped off from the film surface by the collection tool 111. The electrode material 15 that is scraped and dropped is stored in the collection container 112. The collected electrode material 15 can be exchanged as a recycled material, and a volatile solvent can be added and reused as the electrode material 15.

In the illustrated example, the collection tool 111 is disposed with respect to the collection roller 76. However, if the collection unit is a collection unit from the guide roller 75 to the collection roller 76 to which the mask film 18 to which the electrode material 15 is attached is transported, It can be arranged appropriately.

<Third Embodiment>
The wiring forming apparatus 1-3 according to the present embodiment is the same as the wiring forming apparatus 1-1 according to the first embodiment, except that the mask film 18 in the mask unit 71 is a loop-shaped mask film 18 ′. The electrode material recovery mechanism 110 and the cleaning mechanism 120 are arranged on the return path from the recovery side to the supply side of the mask film 18 ′.

In the wiring forming apparatus 1-3 according to the present embodiment, the configuration of each part of the wiring forming apparatus 1-3 other than the mask unit 71 and the operation control thereof are described in the wiring forming apparatus 1 according to the first embodiment. Since it is the same as or similar to -1, the same reference numerals are used for the same or similar components, and the description thereof is omitted.

FIG. 11 is a front view of the mask unit in the wiring forming apparatus according to the third embodiment of the present invention.

In the wiring forming apparatus 1-3 according to the present embodiment, the mask film 18 ′ provided in the mask unit 71 is used for the wiring forming apparatuses 1-1 and 1-2 according to the first and second embodiments. Unlike the mask film 18, the mask film 18 does not have a starting end and a terminal end, and has a loop shape. The mask film 18 ′ is guided by

guide rollers

74 and 75 on both sides of the mask portion 19, and a return portion from the guide roller 75 to the guide roller 74 is a cleaning mechanism 120 described later in the illustrated example. The guide roller 131 is disposed on the introduction side of the cleaning mechanism, the pair of sandwiching

guide rollers

121 and 122 provided on the cleaning mechanism 120, and the guide roller 132 disposed on the outlet side of the cleaning mechanism 120 are sequentially guided. Yes.

A mask film transport motor 77 ′ disposed on the back surface of the support plate 72 is provided in

guide rollers

74, 131, 132, 75 and a pair of clamping

guide rollers

121, 122 that guide the mask film 18 ′ while being stretched. Any one or a plurality of these are rotated so that the loop-shaped mask film 18 ′ moves around these rollers. Below, motor 77 'demonstrates as a structure which rotates the guide roller 121 for clamping among these rollers.

The electrode material recovery mechanism 110 is provided in the recovery portion on the introduction side of the cleaning mechanism 120 where the mask film 18 ′ is conveyed. In the illustrated example, the electrode material recovery mechanism 110 is provided in a guide roller 131 disposed on the introduction side of the cleaning mechanism 120. ing.

The structure of the electrode material recovery mechanism 110 is that the recovery tool 111 ′ is pivotally supported by the support plate 72 at the center, and both end sides of the center are both spatula-shaped and can swing. The electrode material recovery mechanism 110 according to the second embodiment is arranged except that the position in the height direction of one spatula-like portion pressed against the surface of the film 18 'is higher than the other part. The configuration is the same.

The cleaning mechanism 120 includes a pair of clamping

guide rollers

121 and 122, a pair of

waste supply rollers

125 and 126 around which unused long belt-like cleaning wastes 123 and 124 are wound, and

waste supply rollers

125 and 126. The

waste waste rollers

127 and 128 are wound and collected, and the

waste recovery rollers

127 and 128 are disposed on the rear surface of the support plate 72. And a motor 129 that rotationally drives the motor 129.

The pair of clamping

guide rollers

121 and 122 integrally clamps the mask film 18 'between the cleaning

wastes

123 and 124 while arranging them. Then, by the rotation, the mask film 18 ′ and the cleaning wastes 123 and 124 are introduced from the collection unit side where the guide roller 75 is arranged, and these are led out to the supply unit side where the guide roller 74 is arranged. It can be done.

In the illustrated example, for example, every time the electrode material 15 is applied to the substrate surface 11, the clamping guide roller 121 of the pair of clamping

guide rollers

121 and 122 is rotated by a predetermined amount by the motor 77 ′. The mask film 18 ′ of the mask portion 19 is recovered by a predetermined amount to the recovery portion side where the guide roller 75 is disposed, and the predetermined amount from the supply portion side where the guide roller 74 is disposed. The corresponding mask film 18 ′ is derived and positioned on the mask portion 19. At that time, the cleaning wastes 123 and 124 are also led out from the

waste supply rollers

125 and 126 by a predetermined amount by the pair of sandwiching

guide rollers

121 and 122, and are led out toward the

waste collection rollers

127 and 128.

At this time, the

waste collecting rollers

127 and 128 are rotated by the drive of the motor 129 by an amount corresponding to the amount of the cleaning wastes 123 and 124 derived from the pair of sandwiching

guide rollers

121 and 122, and a pair of sandwiching guides. The cleaning wastes 123 and 124 led out from the

rollers

121 and 122 are collected so as not to come into contact with the mask film 18 'on the supply side.

That is, according to the wiring forming apparatus 1-3 according to the present embodiment, in order to cope with repeated use as the mask portion 19 by the loop-shaped mask film 18 ′, the cleaning mechanism 120 has a pair of mask films 18 ′. When passing between the holding

guide rollers

121 and 122, the cleaning wastes 123 and 124 that are passed together with the mask film 18 'while being integrally held are pressed against both surfaces of the mask film 18', and are applied to the surface of the mask film 18 '. The remaining electrode material 15 and dirt are wiped off.

In the wiring forming apparatus 1-3 according to the present embodiment, a wiping configuration using the cleaning wastes 123 and 124 is employed as the cleaning mechanism 120. However, the cleaning mechanism 120 is not limited to this, and a cleaning liquid is used for the cleaning mechanism 120. Various film cleaning mechanisms such as a cleaning mechanism can be used.

<Fourth embodiment>
The wiring forming apparatus 1-4 according to the present embodiment is similar to the wiring forming apparatus 1-1 according to the first embodiment, in which the mask unit 71 is attached and fixed to the unit support base 81 for each mask unit, and the mask unit is moved up and down. The mechanism 90 and the mask unit moving mechanism 95 are individual mask units.

FIG. 12 is a plan view of a wiring forming apparatus according to the fourth embodiment of the present invention.

In the wiring forming apparatus 1-4 according to the present embodiment, the mask unit 71 is attached and fixed to the unit support base 81 for each mask unit, and the mask unit elevating mechanism 90 and the mask unit moving mechanism 95 correspond to each mask unit. Is provided.

According to the present embodiment, the numbers of the mask unit elevating mechanism 90 and the mask unit moving mechanism 95 increase, but in particular, since the mask unit moving mechanism 95 is provided individually for the mask unit 71, the semiconductor substrate 10 to be coated is applied. It is possible to deal with a wider range of size and shape types.

<Fifth embodiment>
The wiring forming apparatus 1-5 according to the present embodiment is different from the wiring forming apparatus 1-1 according to the first embodiment in that the mask film 18 in the mask unit 71 shown in FIG. The fixed quantity m is different.

In the wiring forming apparatus 1-5 according to the present embodiment, the configuration of each part of the wiring forming apparatus 1-5 other than the mask unit 71 and the operation control thereof are described in the wiring forming apparatus 1 according to the first embodiment. Since it is the same as or similar to -1, the same reference numerals are used for the same or similar components, and the description thereof is omitted.

FIG. 13 is an explanatory view of an example of collection and derivation of a predetermined amount, related to the mask film of the mask portion in the wiring forming apparatus according to the fifth embodiment of the present invention.

FIGS. 13A to 13C show the movement position state of the mask film 18 in the first to third coating when the coating is sequentially repeated.

As shown in FIG. 13A, the mask film 18 used in the application work of the electrode material 15 to the semiconductor substrate 10-1 as the formation target of the first finger wiring 16 is the same as that shown in FIG. In the mask film collection process shown in step S60, the film is collected up to the position shown in FIG.

Here, when there is no problem in relation to the thickness of the finger wiring 16 in the wiring installation region B of the substrate surface 11 and the formation interval (wiring pitch) of the finger wiring 16, a mask as shown in FIG. With the mask film collection amount m (= m2 <m1) smaller than the section length of the portion 19, the application work of the electrode material 15 to the semiconductor substrate 10-2 as the formation target of the next finger wiring 16 can be performed.

In this case, in the application work of the electrode material 15 on the next semiconductor substrate 10-2, the mask portion of the mask film 18 to which the electrode material 15 is adhered in the application work of the electrode material 15 on the first semiconductor substrate 10-1 is the semiconductor substrate. Although remaining in the region overlapping with 10-2, the attached electrode material 15 is in a position not overlapping with the finger wiring 16 formed on the substrate surface 11 of the semiconductor substrate 10-2.

Further, as shown in FIG. 13 (C), in the next application work of the electrode material 15 of the semiconductor substrate 10-3, the first and second application work of the electrode material 15 adhered to the mask film 18. The electrode material 15 and the finger wiring 16 formed on the substrate surface 11 of the semiconductor substrate 10-3 are in positions that do not overlap.

Thus, in the wiring forming apparatus 1-5 according to the present embodiment, the mask film collection amount m is set to the finger wiring 16 of the semiconductor substrate 10 on which the electrode material 15 is applied the next time the electrode attachment position on the mask film 18 is applied. Since the insulation state is set so as to be positioned between the two, the mask film collection amount m can be efficiently reduced, and the cost reduction effect is achieved.

Although various embodiments of the wiring forming apparatus according to the present invention have been described above, the present invention is not limited to this. For example, various modifications of the form and number of mask units are possible depending on the arrangement form and orientation of the mask portion.

1 Wiring forming device,
10 Semiconductor substrate (substrate),
11 Substrate surface,
12 edge,
15 electrode material (coating solution),
16 finger wiring (finger electrode),
18 Mask film,
19 Mask part,
20 substrate mounting table,
21 board base,
22 pillars,
23 mounting plate,
24 substrate mounting surface,
30 substrate transport mechanism,
31 device base,
32 substrate transfer stage,
40 coating nozzle,
41 Nozzle body,
42 cavities,
43 Introduction port,
44 Discharge port,
50 nozzle lifting mechanism,
51 nozzle support frame,
52 Pillars,
53 Beam,
54 Nozzle lift stage,
60 coating liquid supply mechanism,
61 electrode material tank,
62 tank body,
63 Supply port,
64 Pressure adjustment port,
65 piping,
66 regulator,
67 valves,
70 mask mechanism,
71 mask unit,
72 support plates,
73 Feeding roller,
74,75 guide rollers,
76 collection roller,
77 motor

All publications, patents and patent applications cited in this specification shall be incorporated into this specification as they are.

Claims

A substrate mounting table on which the substrate is mounted;
A coating nozzle for discharging a coating liquid containing a wiring material to the substrate surface of the substrate placed on the substrate placing table;
A relative movement mechanism for moving one of the coating nozzle and the substrate mounting table relative to the other;
A mask unit provided to be movable relative to the coating nozzle together with the substrate mounting table;
The application nozzle has a plurality of discharge ports arranged along a direction intersecting a relative movement direction by the relative movement mechanism,
The mask unit has an edge that intersects a relative movement direction of the substrate placed on the substrate placement table and the arrangement direction of the plurality of discharge ports in the coating nozzle. When passing below some of the plurality of discharge ports by relative movement by a relative movement mechanism, the coating liquid that is interposed between the some discharge ports and discharged from the some discharge ports is A wiring forming apparatus comprising a mask film for preventing adhesion to the edge portion.
The mask film is formed of a long strip mask film,
The mask unit is
A mask film supply unit in which a band length portion to which the coating liquid of the band-shaped mask film is not attached is disposed;
A mask film recovery part in which a band length portion to which the coating liquid of the band mask film is attached is disposed,
A band length portion of the band-shaped mask film is derived by a predetermined amount from the mask film supply unit, and is newly interposed between the edge portion and the part of the discharge ports, and the edge portion and the part. 2. A mask film moving mechanism for introducing a predetermined length of the band length portion of the band-shaped mask film already interposed between the discharge port and the mask film collecting portion. Wiring forming device.
The mask film recovery part is provided with a coating liquid recovery mechanism for recovering the coating liquid adhering to the film surface of the strip length portion of the strip mask film introduced by the mask film moving mechanism. The wiring forming apparatus according to claim 2.
The mask film is formed of a loop-shaped strip mask film,
The mask unit is
A mask film supply unit in which a band length portion to which the coating liquid of the band-shaped mask film is not attached is disposed;
A mask film recovery part in which a band length portion to which the coating liquid of the band mask film is attached is disposed,
A predetermined length of a band length portion of the band-shaped mask film is led out from the mask film supply unit, and is newly interposed between the edge portion and the part of the discharge ports. A mask film moving mechanism for introducing a band length portion of the band-shaped mask film already interposed between the discharge port of the section into the mask film collecting section by the predetermined amount;
2. A mask film cleaning mechanism provided on a return path of the belt-shaped mask film from the screen film recovery unit to the mask film supply unit, and cleaning the belt-shaped mask film. Wiring forming device.
The mask film moving mechanism is
As the predetermined amount, by discharging the coating liquid from the partial discharge port formed in the band length portion of the band-shaped mask film interposed between the edge portion and the partial discharge port. 5. The coated strip-shaped coating region is derived from the mask film supply unit so as to be positioned between the partial ejection ports, and is introduced into the mask film collection unit. Wiring forming device.