JP2011233571A - Manufacturing apparatus of semiconductor device and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform accurate positioning an object of thin paper shape such as a semiconductor wafer.SOLUTION: The manufacturing apparatus of the semiconductor device 1 comprises a centering part 4a for matching the center of an object W to be coated with the center of a hand 3a, and the centering part 4a comprises a supporting table 31 for supporting the object W to be coated; and a plurality of pressing part 32 for pressing and moving the object W to be coated on the supporting table 31, and matching the center of the object W to be coated with the center of the hand 3a positioned to the supporting table 31.

Description

  The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method.

  Usually, in the manufacturing process of a semiconductor device, a semiconductor wafer is mounted on a dicing tape via an adhesive sheet (also called a DAF material), and the semiconductor wafer is separated into pieces by blade dicing to manufacture a plurality of semiconductor chips ( For example, see Patent Document 1).

  When a semiconductor wafer is mounted on a dicing tape, first, the back surface of the element forming surface of the semiconductor wafer is ground and an adhesive sheet is attached to the back surface, and the semiconductor wafer is placed on the dicing tape via the adhesive sheet. Mounted. In addition, after dicing, UV irradiation is performed with respect to the dicing tape from the back surface side of the semiconductor wafer, and the adhesive force of the dicing tape with respect to the adhesive sheet is reduced because of a post-process pickup for removing the semiconductor chip from the dicing tape.

  In recent years, semiconductor wafers have been in a trend of thinning, and due to the thinning, rigidity has become extremely small and bending is very easy. In the manufacturing process described above, various apparatuses are used, and it is necessary to transfer a semiconductor wafer having a thin paper shape and almost no rigidity between the apparatuses. In some cases, the semiconductor wafer is placed on a stage. At this time, it is necessary to place the semiconductor wafer at a predetermined position on the stage within a predetermined allowable range for a subsequent process.

JP 2008-270282 A

  However, a thin paper-like semiconductor wafer has almost no rigidity and thus is easily deformed, and it is difficult to deliver the thin paper-like semiconductor wafer. For this reason, it is difficult to place the semiconductor wafer at a predetermined position on the stage within a predetermined allowable range, and accurate alignment is difficult.

  The present invention has been made in view of the above, and an object thereof is to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of accurately positioning a thin paper-like object such as a semiconductor wafer. That is.

  A first feature according to an embodiment of the present invention is a semiconductor device manufacturing apparatus, which includes a hand that supports a coating target, a transport unit that transports the coating target using the hand, a coating target, and a hand. A positioning unit that includes a positioning unit that performs positioning of the coating object and a coating unit that has a stage on which the coating target is placed and applies an adhesive to the coating target placed on the stage by a hand. Is for aligning the object to be coated, which is supported by the hand and conveyed to the stage, with respect to the hand, and has a centering unit that aligns the center of the object to be coated with the center of the hand. A support base for supporting the application target; and a plurality of pressing portions for pressing and moving the application target on the support base to align the center of the application target with the center of the hand positioned with respect to the support base. And it is that it is.

  A second feature according to an embodiment of the present invention is a semiconductor device manufacturing apparatus, which has a hand that supports a coating target, a transport unit that transports the coating target with the hand, a coating target, and a hand. A positioning unit that includes a positioning unit that performs positioning of the coating object and a coating unit that has a stage on which the coating target is placed and applies an adhesive to the coating target placed on the stage by a hand. Is for aligning the application object supported by the hand and transported to the stage with respect to the hand, and having a pre-alignment unit for adjusting the inclination of the application object relative to the stage in the rotation direction to a predetermined inclination. The pre-alignment unit is held by a holding unit that holds the application target, a rotation driving unit that rotates the holding unit in a plane along the holding surface of the application target, and a holding unit. An imaging unit that captures an outer peripheral portion of the coated object, and an image processing calculation unit that processes a captured image captured by the imaging unit and obtains an inclination in the rotation direction of the coated object. .

  A third feature according to the embodiment of the present invention is that, in the method for manufacturing a semiconductor device, the application object and the hand are aligned by using a conveyance unit that conveys the application object by a hand that supports the application object. The step of conveying the application object to the alignment unit that performs the step, the step of aligning the application object and the hand by the alignment unit, and the application object that has been aligned with the hand by the alignment unit Supporting the application target in the process of aligning with the step of placing on the stage of the application unit and the step of applying the adhesive to the application target placed on the stage by the hand Place the object to be coated on the table with the hand, and press and move the object to be coated on the support table with the multiple pressing parts to align the center of the object with the center of the hand positioned with respect to the support table. It is.

  According to a fourth aspect of the present invention, in the method for manufacturing a semiconductor device, the application object and the hand are aligned by using a conveyance unit that conveys the application object by a hand that supports the application object. The step of conveying the application object to the alignment unit that performs the step, the step of aligning the application object and the hand by the alignment unit, and the application object that has been aligned with the hand by the alignment unit A holding process for holding the coating object in the process of positioning, which includes a process of placing on the stage of the coating unit and a process of applying an adhesive to the coating object placed on the stage by a hand. The application object is held by the part, the holding part is rotated by the rotation driving part, the outer peripheral part of the application object held by the rotating holding part is imaged by the imaging part, and the captured image captured by the imaging part is obtained. Zui it is to calculate the correction amount for adjusting the orientation of the object to be coated relative to the stage to a predetermined position.

  According to the present invention, it is possible to accurately position a thin paper-like object such as a semiconductor wafer.

It is a top view which shows schematic structure of the manufacturing apparatus of the semiconductor device which concerns on one Embodiment of this invention. It is a schematic diagram which shows the accommodating part with which the manufacturing apparatus of FIG. 1 is provided. It is a top view which shows the support plate with which the accommodating part of FIG. 2 is provided. It is a top view which shows the hand of the conveyance part with which the manufacturing apparatus of FIG. 1 is provided. FIG. 5 is a cross-sectional view taken along line A1-A1 of FIG. FIG. 5 is an explanatory diagram for explaining an operation in which the hand of FIG. 4 takes out a wafer from a storage unit. It is a schematic diagram which shows the position alignment part and drying part with which the manufacturing apparatus of FIG. 1 is provided. It is a top view which shows the centering part with which the position alignment part of FIG. 7 is provided. It is a top view which shows the pre-alignment part with which the position alignment part of FIG. 7 is provided. It is explanatory drawing for demonstrating the position alignment using the wafer which is not temporarily diced, and its notch. It is explanatory drawing for demonstrating the position alignment using the wafer and the notch which are temporarily diced. It is a schematic diagram which shows the irradiation part with which the manufacturing apparatus of FIG. 1 is provided. It is explanatory drawing for demonstrating the relationship between the usage time of a UV lamp with which the irradiation part of FIG. 12 is provided, and illumination intensity. It is a schematic diagram which shows the stage of the application part with which the manufacturing apparatus of FIG. 1 is provided. It is a top view which shows the position of the lift pin with which the stage of FIG. 14 is provided. It is a top view which shows the position of the suction hole with which the stage of FIG. 14 is provided. It is a schematic diagram which shows the discharge confirmation part which comprises the discharge stable part of the application part with which the manufacturing apparatus of FIG. 1 is provided. It is a top view which shows the discharge confirmation part of FIG. It is a schematic diagram which shows the cleaning wet part which comprises the discharge stable part of the application part with which the manufacturing apparatus of FIG. 1 is provided. It is a top view which shows the cleaning wet part of FIG. It is a schematic diagram which shows the discharge amount confirmation part which comprises the discharge stable part of the application part with which the manufacturing apparatus of FIG. 1 is provided. It is a top view which shows the discharge amount confirmation part of FIG. It is a schematic diagram which shows the cleaning part of the application part with which the manufacturing apparatus of FIG. 1 is provided. It is a top view which shows the heater plate with which the drying part of FIG. 7 is provided. It is a flowchart which shows the flow of the manufacturing process which the manufacturing apparatus of FIG. 1 performs.

  An embodiment of the present invention will be described with reference to the drawings.

  As shown in FIG. 1, a semiconductor device manufacturing apparatus 1 according to an embodiment of the present invention transports a wafer W and a plurality of storage portions 2 that store a wafer W as an application target (or a processing target). A transport unit 3 that performs pre-alignment, an irradiation unit 5 that irradiates ultraviolet rays, an application unit 6 that applies an adhesive to the surface of the wafer W, a drying unit 7 that performs temporary drying, and each unit. And a control unit 8 for controlling.

  These parts are arranged on the gantry 1a of the manufacturing apparatus 1 so as to surround the conveyance part 3 as a center. That is, the transport unit 3 is arranged in the center of the left side on the gantry 1a, the storage unit 2 is located above the transport unit 3, the alignment unit 4 and the drying unit 7 are located on the upper right side of the transport unit 3, and the transport unit 3 is located below the transport unit 3. An application unit 6 is disposed on the lower right side of the irradiation unit 5 and the conveyance unit 3. Note that the adhesive applied to the wafer W is used for bonding when a chip in which the wafer W is separated is mounted. That is, the wafer W is cut by dicing or the like and separated into individual chips as described in the prior art after the adhesive coating film is formed and removed by the semiconductor manufacturing apparatus 1. Thereafter, each chip is taken out by die bonding or the like, and the taken-out chip is mounted on the substrate directly or via another chip or the like by an adhesive applied by the semiconductor device manufacturing apparatus 1.

  Each housing portion 2 is a wafer cassette for loading or unloading the wafer W. These accommodating portions 2 are formed to be detachable from the gantry 1 a of the manufacturing apparatus 1. In the embodiment of the present invention, for example, two accommodating portions 2 are provided. Either one of these accommodating portions 2 is used for carrying in the wafer W, and the other is used for carrying out the wafer W.

  As shown in FIGS. 2 and 3, each housing portion 2 includes a plurality of support plates 2a that respectively support the wafer W, and a pair of holding bodies 2b that hold the support plates 2a in multiple stages (see FIG. 2). Each is equipped. These holding bodies 2b are formed in a plate shape or a column shape, for example.

  The support plate 2a is formed in a comb-like shape having a plurality of (in this embodiment, five) support portions 2a1 that support the wafer W, and supports the placed wafer W from its lower surface. It is a member. The support plate 2a is provided with a plurality of hold pins 11 (see FIG. 3). Further, a plate-like reinforcing member 12 that reinforces the support portions 2a1 is provided below the front ends of the support portions 2a1 constituting the comb teeth of the support plate 2a so as to intersect the extending direction of the support portions 2a1. It has been. The reinforcing member 12 has a plurality of connecting columns 12a (see FIG. 2), and supports the tips of the support portions 2a1 through the connecting columns 12a. Such support plates 2a are stacked in multiple stages at predetermined intervals.

  Each hold pin 11 is arranged in a circle according to the outer shape of the wafer W, and restricts the movement of the wafer W placed on the support plate 2a in the planar direction. The tip of the hold pin 11 is tapered. Therefore, even when the wafer W is supplied to the support plate 2a at a position slightly deviated from the center of the arrangement circle of the hold pins 11, when the wafer W descends between the hold pins 11, the wafer W Since the peripheral edge on the side shifted from the center contacts the tapered portion at the tip of the hold pin 11 and is pushed in the lateral direction, it is aligned with the center of the arrangement circle of the hold pin 11. In this way, the wafer W is placed on the circular region surrounded by the hold pins 11 in the support plate 2a, and the movement in the plane direction is restricted and held by the hold pins 11. In the example of FIG. 3, six hold pins 11 are arranged in a circle.

  Returning to FIG. 1, the transport unit 3 supports a hand 3 a that can move while holding the wafer W, an arm 3 b that supports the hand 3 a, can be expanded, moved up and down, and can be rotated in a plane direction, and the arm 3 b. And an arm movement drive unit 3c that moves in the X-axis direction. The transport unit 3 delivers the wafer W between the storage units 2, the alignment unit 4, the irradiation unit 5, the coating unit 6, and the drying unit 7.

  As shown in FIG. 4, the hand 3 a is formed in a comb-like shape having a plurality of (six in the present embodiment) support portions 3 a 1 that support the wafer W, and the mounted wafer W Is a member that supports the surface from the lower surface. In particular, each support portion 3a1 just enters the valley portion of each support portion 2a1 constituting the comb teeth of the support plate 2a (see FIG. 3) provided in the accommodating portion 2 (hereinafter, this state is referred to as “combined”). A comb-shaped tooth is formed. Wide portions 3a2 having a shape matching the outer shape of the wafer W placed on the hand 3a are formed on the support portions 3a1 located at both ends of the hand 3a. The hand 3 a is provided with a plurality of hold pins 21 and a plurality of suction holes 22.

  Each hold pin 21 is arranged in a circle according to the outer shape of the wafer W, and restricts the movement of the wafer W placed on the hand 3a in the plane direction. More specifically, the hold pins 21 are arranged at intervals along the circumference of a circle (arrangement circle) having a diameter that is several millimeters larger than the diameter of the wafer W. The hold pin 21 has a tip that is tapered. For this reason, even when the wafer W is received by the hand 3 a at a position slightly deviated from the center of the arrangement circle of the hold pins 21, the center of the wafer W is shifted when the wafer W descends between the hold pins 21. The peripheral edge of the holding pin 21 abuts against the tapered portion at the tip of the hold pin 21 and is pushed in the lateral direction, so that it is positioned within the arrangement circle of the hold pin 21. As described above, the wafer W is placed on a circular region surrounded by the hold pins 21 in the hand 3 a, and movement in the plane direction is restricted by the hold pins 21. In the example of FIG. 4, eight hold pins 21 are arranged in a circle.

  Each suction hole 22 is provided so that the wafer W can be satisfactorily attracted to the vicinity of the center of the comb teeth of the hand 3a. As shown in FIG. 5, these suction holes 22 communicate with a suction path 23 formed inside the hand 3 a. The suction path 23 is connected to a suction unit (not shown) such as a suction pump through a pipe such as a tube or a pipe. Thereby, the wafer W is held by suction by the suction holes 22 while the movement in the plane direction is regulated by the hold pins 21. For example, a vacuum chuck or a local Bernoulli chuck is used as the suction method.

  Returning to FIG. 1, the arm 3 b is configured to be extendable and retractable, and to be horizontally rotatable, and is further configured to be movable in the X-axis direction by the arm movement driving unit 3 c. The arm 3b moves the hand 3a forward and backward by expansion and contraction. The arm 3 b is electrically connected to the control unit 8, and its expansion / contraction, elevation, and horizontal rotation are controlled by the control unit 8.

  The arm movement drive unit 3c is a moving mechanism that moves the arm 3b while guiding it in the X-axis direction, and is provided on the gantry 1a. The arm movement drive unit 3 c is electrically connected to the control unit 8, and the drive is controlled by the control unit 8. As the arm movement drive unit 3c, for example, a feed screw type drive unit using a servo motor as a drive source, a linear motor type drive unit using a linear motor as a drive source, or the like is used.

  Here, as shown in FIG. 6, each support portion 3a1 that constitutes the comb teeth of the hand 3a is configured to form the comb teeth of the support plate 2a included in the accommodating portion 2 by the extension operation of the arm 3b. It is inserted into the valley between 2a1 and combined with each support 2a1 of the support plate 2a. Next, the hand 3a moves upward by the operation of the arm 3b and comes into contact with the lower surface of the wafer W placed on the support plate 2a. At this time, the hand 3 a regulates the movement of the wafer W in the planar direction by the hold pins 21 and, in addition, sucks and holds the wafer W by the suction holes 22. Thereafter, the hand 3a is moved further upward by the operation of the arm 3b, and after the movement, the hand 3a is contracted and moved toward the front side, and the wafer W is taken out from the accommodating portion 2 and carried into the apparatus. Finally, the hand 3 a moves in the X-axis direction together with the arm 3 b while holding the wafer W, and passes the wafer W to the alignment unit 4. Carrying out is the reverse procedure of carrying in.

  As shown in FIG. 7, the alignment unit 4 in FIG. 1 includes a centering unit 4a that performs alignment in the plane direction (XY direction) between the hand 3a of the transport unit 3 and the wafer W on the hand 3a, and a rotation direction ( and a pre-alignment unit 4b that performs alignment in the θ direction). The alignment unit 4 is provided on the top of the drying unit 7.

  As shown in FIGS. 7 and 8, the centering portion 4 a includes a support base 31 that supports the wafer W and a plurality of pressing portions 32 that center the wafer W supported on the support base 31 by pressing the wafer W in the plane direction. Have. In the embodiment of the present invention, three pressing portions 32 are provided.

  The centering portion 4a is a mechanism for aligning the center of the wafer W with the center of the hand 3a (this center coincides with the center of the arrangement circle of the hold pins 21). That is, the wafer W is positioned by the hold pin 21 with respect to the hand 3a, but the diameter of the circle inscribed in the eight hold pins 21 is larger than the diameter of the wafer W. The positioning is accurate and includes errors. Therefore, positioning with higher accuracy than the hold pin 21 is performed by the centering portion 4a. Since the center of the hand 3a is a position serving as a reference position (application reference position) in a subsequent process, it is necessary to accurately align the center of the wafer W with the center of the hand 3a. The centering unit 4a mechanically performs centering so as not to damage the end of the wafer W and the protective film on the wafer W.

  In the support base 31, each support portion 3a1 constituting the comb teeth of the hand 3a just enters the valley portion (hereinafter, this state is referred to as “combine”). In the embodiment, five support portions 31a are provided (see FIG. 8). More specifically, the support base 31 is formed with a concave portion into which each support portion 3a1 constituting the comb teeth of the hand 3a is inserted, and the upper surface of the support base 31 becomes each support portion 31a that supports the wafer W. ing. The hand 3a enters between the support portions 31a constituting the comb teeth of the support base 31 and transfers the wafer W. The positioning position of the hand 3a with respect to the support base 31 at this time is adjusted and set in advance to a position where the center of the wafer W that has been centered on the support base 31 coincides with the center of the hand 3a. Therefore, by centering the wafer W on the support base 31, the center of the hand 3a and the center of the wafer W can be matched.

  Each pressing portion 32 has a lever portion 32a that abuts on the end portion of the wafer W, and a movement drive portion 32b that moves the lever portion 32a in the plane direction.

  The lever portion 32a includes a pin (not shown) projecting downward at the lower end of the tip, and is moved by the movement drive portion 32b to abut the pin against the wafer W and push the wafer W in the plane direction. Therefore, a notch (not shown) for allowing the pin of the lever portion 32a to move is formed in each support portion 31a constituting the comb teeth of the support base 31. The lever portion 32a is formed such that its stop position can be switched according to the size (for example, 8 inches and 12 inches) of the wafer W to be centered. The stop position is such that a slight gap is formed between the pin of the lever portion 32a and the outer periphery of the wafer W. Thereby, it is possible to prevent breakage such as cracking or chipping due to the wafer W being sandwiched between the three lever portions 32a. This gap is sufficiently smaller than the difference between the diameter of the circle inscribed in the hold pin 21 of the hand 3a and the diameter of the wafer W.

  The movement drive unit 32 b is electrically connected to the control unit 8, and the drive is controlled by the control unit 8. As the movement drive unit 32b, for example, a feed screw drive unit using an servo motor as a drive source, an air cylinder, or the like is used. The embodiment of the present invention is an example using a feed screw mechanism. When the feed screw mechanism is used, the feed amount can be easily adjusted by the rotation amount of the servo motor. Therefore, the stop position of the lever portion 32a can be easily adjusted, and the centering position of the wafer W can be easily adjusted. Can be adjusted.

  Such a centering part 4a presses the pin of the lever part 32a of each pressing part 32 from three directions on the outer periphery of the wafer W on the support base 31, and pushes the wafer W in the plane direction by pressing with the pin of each lever part 32a. , And aligning the center of the hand 3a with the center of the wafer W (centering) is performed.

  As shown in FIGS. 7 and 9, the pre-alignment unit 4 b includes a holding unit 41 that holds the wafer W by attracting it to the lower surface, a rotation driving unit 42 that rotates the holding unit 41 in a plane, and a holding unit 41. The image pickup unit 43 for picking up an image of the outer peripheral portion of the wafer W held by the image pickup unit from above, and the movement drive unit 44 for moving the image pickup unit 43 in the radial direction of the wafer W.

  The holding unit 41 is a disk-shaped stage having a vacuum suction mechanism, sucks and holds the wafer W on its lower surface, and receives the wafer W from the hand 3 a of the transport unit 3. The planar size of the holding unit 41 is formed smaller than the planar size of the wafer W so that the imaging unit 43 can image the outer peripheral portion of the wafer W. That is, when the holding unit 41 holds the wafer W, the outer peripheral portion of the wafer W protrudes from the outer periphery (stage outer periphery) of the holding unit 41, and the outer peripheral portion of the wafer W can be imaged. Further, the holding portion 41 is detachably formed with respect to the rotation driving portion 42 and can be exchanged according to the size of the wafer W. Here, the outer peripheral portion is a region including an edge portion in the wafer W where a notch N described later is formed.

  The rotation drive unit 42 is a rotation mechanism that supports the holding unit 41 and rotates it in the θ direction (see FIG. 9), and is provided on the upper portion of the holding unit 41. The rotation drive unit 42 is electrically connected to the control unit 8, and the drive is controlled by the control unit 8.

  The imaging unit 43 is provided so that the outer peripheral portion of the holding unit 41 can be imaged from above. The imaging unit 43 is electrically connected to the control unit 8, and its driving is controlled by the control unit 8. As the imaging unit 43, for example, a CCD camera or the like is used. Note that the flat plates 45 and 46 located below the imaging unit 43 have openings H serving as imaging windows so that the imaging unit 43 can image the outer peripheral portion of the wafer W. The opening H is formed to be obliquely long in plan view (see FIG. 9), and the imaging unit 43 images the outer peripheral portion of the wafer W through the opening H.

  Here, the reason why the opening H is formed long is that the position of the imaging unit 43 can be switched in accordance with the size (8 inches and 12 inches) of the wafer W to be handled. Therefore, the opening H is formed to be long in the moving direction of the imaging unit 43 (radial direction of the holding unit 41). The reason why the opening H is formed obliquely is that the notch N of the wafer W is detected and positioned at a position inclined by a predetermined angle with respect to the advancing / retreating direction of the hand 3a of the transport unit 3. That is, the hand 3a moves forward and backward from an oblique direction (arrow A2 in FIG. 1) with respect to the X direction, which is the moving direction of the stage 6a, with respect to a stage 6a (described later) of the application unit 6. When the wafer W is transferred from the hand 3a to the stage 6a, the wafer W is rotated with respect to the hand 3a so that the notch N of the wafer W faces the moving direction (X direction) of the stage 6a. It is necessary to be positioned at a predetermined angle in the direction. Therefore, an angle Δθ1 formed by a straight line connecting the advancing / retreating direction of the hand 3a with respect to the pre-alignment unit 4b (arrow A1 in FIGS. 1 and 6) and the rotation center of the holding unit 41 and the visual field center of the imaging unit 43 is an application unit 6. Is set to be equal to an angle Δθ2 formed by the advancing / retreating direction of the hand 3a with respect to the stage 6a (arrow A2 in FIG. 1) and the moving direction (X-axis direction) of the stage 6a, and the notch N of the wafer W is set to the hand 3a. Is positioned at an angle of Δθ1 = Δθ2.

  The movement drive unit 44 is a moving mechanism that moves the imaging unit 43 to an imaging position where the imaging unit 43 can image the outer peripheral portion of the wafer W according to the size of the wafer W. The movement drive unit 44 is electrically connected to the control unit 8, and its drive is controlled by the control unit 8. For example, in the case of a small 8 inch wafer W, it is close to the rotation center of the holding unit 41. On the inside, in the case of a large 12-inch wafer W, the wafer W is moved to the outside far from the center of rotation of the holding portion 41. As the movement drive unit 44, for example, a feed screw drive unit using an servo motor as a drive source, an air cylinder, or the like is used.

  Such a pre-alignment unit 4 b attracts and holds the wafer W on the lower surface of the holding unit 41, and further moves the imaging unit 43 to the imaging position by the movement driving unit 44. Thereafter, the pre-alignment unit 4 b images the outer peripheral portion of the rotating wafer W through the openings H of the flat plates 45 and 46 by the imaging unit 43 while rotating the holding unit 41 by the rotation driving unit 42. More specifically, the rotation driving unit 42 rotates the holding unit 41 at a set rotation speed. During the rotation operation of the holding unit 41, the imaging unit 43 captures an image of the outer peripheral portion of the wafer W at a predetermined imaging timing based on the control of the control unit 8. Here, the imaging timing is set to a timing at which the image captured by the imaging unit 43 at this time overlaps with a part of the next image to be captured. For example, when the imaging unit 43 has a size of an imaging field of view that can capture an arc (peripheral portion) of 20 ° on the outer periphery of the wafer W at a time, imaging is performed every time the holding unit 41 rotates 15 °. is there. Note that the holding unit 41 may be temporarily stopped in accordance with the timing of imaging by the imaging unit 43, or may be captured at a set timing (for example, every 15 ° rotation) while the holding unit 41 is continuously rotated. May be.

  Here, a plurality of chips (semiconductor elements) are arranged in a lattice pattern on the surface of the wafer W, and this surface becomes an element formation surface. A protective tape is affixed to the element forming surface. On the other hand, the back surface of the wafer W is polished by a grindstone or the like, and this surface becomes an application surface to which an adhesive is applied.

  10 and 11 show the back surface (application surface) of the wafer W. FIG. FIG. 10 shows a wafer that has not been temporarily diced (hereinafter referred to as an undiced wafer), and FIG. 11 shows a wafer that has been temporarily diced (hereinafter referred to as a diced wafer). Here, temporary dicing means cutting to a predetermined depth, and the wafer after provisional dicing is completely cut and separated into individual pieces in a subsequent process. In FIG. 11, lattice-shaped dicing grooves are formed on the back surface (application surface) of the wafer by temporary dicing.

  In such a wafer W, as shown in FIG. 10, a notch N for alignment is usually provided on the outer edge of the wafer W. However, in addition to the notch N, there may be a chip K generated in the conveying process or the like on the outer edge of the wafer W. If this notch K is recognized as a notch N, alignment cannot be performed accurately.

  Therefore, the pre-alignment unit 4b performs image processing on the captured image and compares the captured image of the missing portion with the reference notch image registered in advance as a reference, that is, the captured image of the missing portion and the reference notch. Then, it is determined whether or not the imaged missing portion is a notch N. That is, when the imaged chipped portion matches the reference notch, the chipped portion is determined to be the notch N, and when the chipped portion does not match the reference notch, the chipped portion is determined to be the notch K. Is done. As a result, it is possible to prevent erroneous recognition that the chip K of the wafer W is recognized as the notch N.

  Specifically, the pre-alignment unit 4b includes an image processing calculation unit (not shown), and each time the imaging unit 43 captures an image of the outer peripheral portion of the wafer W, the image processing calculation unit stores the image in the captured image in advance. Whether or not there is a pattern that matches the reference notch being made, and if so, the position of the pattern (notch N) on the outer peripheral portion of the wafer W (the direction of rotation (θ direction) relative to the position where the notch N should be) Position deviation). For example, when the center of the imaging field of the imaging unit 43 is the position where the notch N should be, the positional shift in the X and Y directions with respect to the center of the imaging field (the center position of the captured image) of the notch N in the captured image and the wafer W The position deviation of the notch N in the θ direction with respect to the imaging field center is calculated from the radius of.

  Here, the image processing is performed every time the image capturing unit 43 performs image capturing. However, after the image capturing unit 43 has captured all the images of the outer peripheral portion of the wafer 43, all the captured images are processed. Image processing may be performed. However, when image processing is performed every time the imaging unit 43 performs imaging, it is efficient because subsequent imaging can be interrupted when the notch N is detected. Moreover, although the image processing calculation part shall be provided in the pre-alignment part 4b, the control part 8 may serve as the function.

  In this way, the notch N is recognized, the correction amount in the θ direction is calculated from the position of the notch N and the radius of the wafer W, and the position of the wafer W in the θ direction is corrected based on the correction amount. This position correction is performed by the rotation drive unit 42 under the control of the control unit 8 when the wafer W is transferred from the holding unit 41 to the hand 3 a of the transport unit 3. That is, the control unit 8 drives the rotation driving unit 42 with the calculated correction amount, aligns the notch N position of the wafer W with the center of the field of view of the imaging unit 43, and in this state the wafer W is moved to the hand 3 a of the transport unit 3. Deliver. Thus, when the wafer W is transferred from the hand 3a of the transport unit 3 to the stage 6a of the coating unit 6 described later, the notch N of the wafer W faces the moving direction (X-axis direction) of the stage 6a.

  In the case of the undiced wafer W, the orientation of the wafer W relative to the stage 6a may not need to be positioned at a predetermined position, that is, a position where the notch N faces the moving direction of the stage 6a. For example, when the adhesive film is formed in a circular shape only in a region inside the notch N formation region in the wafer W, the notch N does not necessarily have to be directed in the moving direction of the stage 6a. In such a case, information on whether the wafer W supplied from the storage unit 2 to the storage unit, for example, the storage unit included in the control unit 8, is an undiced wafer W or a diced wafer W, Alternatively, information indicating whether or not pre-alignment is necessary is stored, and based on this information, the control unit 8 determines whether or not the pre-alignment unit 4b needs to perform pre-alignment, and determines that execution is necessary. The pre-alignment may be executed only when it is performed. In addition, even if the wafer W is not diced, if the adhesive film is formed in a circular shape excluding the notch N within the formation region of the notch N, information indicating that pre-alignment is necessary. It is good to memorize and perform pre-alignment.

  As shown in FIG. 12, the irradiation unit 5 in FIG. 1 includes a UV lamp 5a that generates UV (ultraviolet light), a lamp movement drive unit 5b that moves the UV lamp 5a in the vertical direction, and a UV light amount (ultraviolet light amount). And a sensor 5c serving as a detector for detecting. The irradiating unit 5 is provided inside a box-shaped UV housing (not shown) provided with loading / unloading of the wafer W. The interior of the UV housing is in a positive pressure atmosphere of a gas such as nitrogen or oxygen.

  The lamp movement drive unit 5b is a moving mechanism for adjusting the separation distance (gap) between the wafer W and the UV lamp 5a by moving the UV lamp 5a in the vertical direction (the direction in which the UV lamp 5a is in contact with and away from the wafer W). . As the lamp movement drive unit 5b, for example, a feed screw drive unit using a servo motor as a drive source is used.

  Such an irradiation unit 5 performs surface modification by irradiating the back surface of the wafer W (application surface to which the adhesive is applied) with UV. As a result, the adhesive adheres stably to the application surface of the wafer W, and the degree of adhesion between the application surface of the wafer W and the adhesive can be improved.

  Note that the wafer W supported by the hand 3a of the transport unit 3 reciprocates relative to the single UV lamp 5a by the operation of the arm 3b in order to secure a predetermined integrated light amount necessary for surface modification. As a result, it is possible to obtain an integrated light amount equivalent to the irradiation when the wafer W is passed in one direction with respect to the two UV lamps 5a arranged in parallel.

  Further, as shown in FIG. 13, it is known that the UV light radiated from the UV lamp 5a attenuates with time, so that a good adhesion with the adhesive is stably provided on the coated surface (back surface) of the wafer W. In order to achieve this, it is necessary to make the UV light amount irradiated to the wafer W constant at a predetermined amount.

  Therefore, the irradiation unit 5 adjusts various conditions according to the UV light amount detected by the sensor 5c so that the UV light amount becomes constant at a predetermined amount. For example, as shown in FIG. 13, when the illuminance is attenuated to about 70% when the UV lamp 5a reaches the life of 4000 hours, the irradiating unit 5 changes the illuminance of the wafer W to the illuminance of 70% which is the lamp life. Various conditions are adjusted so that the UV light amount is kept constant (adjustment means). That is, when the UV light amount detected by the sensor 5c corresponds to 100% illuminance, the UV lamp 5a is raised by the lamp movement driving unit 5b so that the UV light amount reaching the wafer W is adjusted to 70% illuminance. If the amount of light detected by the sensor 5c is smaller than 100% of the illuminance, the lamp movement driving unit 5b is adjusted so that the gap between the wafer W and the UV lamp 5a is reduced according to the amount of decrease. Such adjustment is performed every time (every time) or periodically. As a result, fluctuations in the amount of UV light applied to the wafer W by the irradiating unit 5 are suppressed, so that surface modification to the back surface (application surface) of the wafer W can be performed reliably and stably. it can.

  Note that the amount of UV attenuation in the UV lamp 5a is greatest at the beginning of use, and then gradually decreases as the lamp life approaches. Therefore, the adjustment amount of the gap between the wafer W and the lamp 5a may be gradually reduced with the passage of time in accordance with the UV attenuation amount.

  Various conditions include the above-described distance between the wafer W and the UV lamp 5a, the intensity of the UV lamp 5a (the input voltage of the UV lamp 5a), and the irradiation time (the relative speed between the wafer W and the UV lamp 5a). ), The supply amount (gas flow rate) of a reaction gas such as nitrogen or oxygen. For example, when the input voltage of the UV lamp 5a is used, even when the lamp illuminance is greater than 70% before the lamp life, the input voltage is controlled to maintain the illuminance at 70%. Further, in the case of the irradiation time, the moving speed of the hand 3a by the arm 3b of the transport unit 3 is decreased in accordance with the decrease in lamp illuminance, and the integrated value of the irradiation light amount per unit area with respect to the application surface of the wafer W becomes constant. Adjust as follows. Further, when the gas supply amount is used, the surface modification effect of the wafer W coating surface by UV is affected by the lamp illuminance and the gas atmosphere concentration around the coating surface, so that the desired surface modification effect is obtained when the lamp illuminance is 70%. As a reference, when the lamp illuminance is higher than 70%, the gas supply amount (gas concentration) is reduced according to the difference from the 70% lamp illuminance. Note that the adjustment of the separation distance between the wafer W and the UV lamp 5a may be performed by the lifting / lowering function of the transport unit 3 instead of the lamp movement driving unit 5b.

  Here, as the irradiation method, a batch irradiation method, a scanning method, a rotation irradiation method, or the like that performs batch irradiation on the entire surface of the wafer W at a fixed position may be used. Moreover, as a structure of the irradiation part 5, the structure which irradiates with respect to the wafer W on a roller conveyor, a stage, a proximity pin, a robot arm, etc. may be used.

  Returning to FIG. 1, the coating unit 6 applies an adhesive toward the stage 6 a on which the wafer W is placed, a stage conveyance driving unit 6 b that moves the stage 6 a in the X-axis direction, and the wafer W on the stage 6 a. A plurality of coating heads 6c that are ejected and coated by an inkjet method, a liquid feeding unit 6d that supplies an adhesive to the coating heads 6c, a discharge stabilizing unit 6e that stabilizes the discharge performance of each coating head 6c, and a stage And a cleaning portion 6f for cleaning the application surface of the wafer W on 6a. In FIG. 1, illustration of a support portion that supports each coating head 6 c is omitted.

  As shown in FIG. 14, the stage 6 a includes a heating stage 51 that heats the mounted wafer W, a rotation driving unit 52 that rotates the heating stage 51 in a plane, and a rotation driving unit 52 that rotates the heating stage 51. And a movement drive unit 53 that moves in the Y-axis direction. The stage 6a is provided on the gantry 1a via a stage conveyance driving unit 6b.

  The heating stage 51 is a mounting table on which the wafer W is mounted in a horizontal state, and heats the wafer W in the mounting state. In this heating stage 51, rod-shaped heaters 51a are arranged in substantially equal intervals along the Y-axis direction. In addition, the arrangement | positioning space | interval of the heater 51a located in an edge part (both ends) is narrow. This is because the heater 51a does not exist outside the heater 51a located at the end, so that the heat radiation on the outer peripheral side is larger than the center side of the heating stage 51, and the temperature of the outer peripheral part tends to decrease. This is because the heater 51a that is positioned is brought closer to the adjacent heater 51a by the amount that the outer peripheral portion easily radiates heat, and temperature drop due to heat radiation is prevented. The heating of the wafer W by the heating stage 51 is to promote drying of the adhesive applied to the application surface of the wafer W.

  Here, the temperature adjustment of the heating stage 51 is performed by feedback control using a temperature measuring device such as a resistance temperature detector. Since there is a temperature difference between the measurement value of the resistance temperature detector inserted as a temperature measuring instrument in the heating stage 51 and the surface of the heating stage 51, the temperature for control is set by correcting this temperature difference in advance. Yes.

  The heating stage 51 is provided with a plurality of rod-like lift pins 51b that can be moved up and down. These lift pins 51 b are pins for delivering the wafer W to and from the hand 3 a of the transport unit 3. Each lift pin 51b is erected on the support plate 51c. The support plate 51c is disposed below the heating stage 51, and is configured to move up and down by an air cylinder 51d. As a result, all the lift pins 51b are lifted and lowered simultaneously. Further, as shown in FIG. 15, each lift pin 51b is arranged so as to avoid the arrangement of the heater 51a and not to interfere with the hand 3a positioned on the stage 6a for delivery of the wafer W.

  Further, the heating stage 51 is provided with a plurality of suction holes 51e as shown in FIG. The suction holes 51e are provided so as to be distributed substantially evenly in the holding region of the wafer W while avoiding the arrangement positions of the heaters 51a and the lift pins 51b. These suction holes 51e communicate with a suction path (not shown), and the suction path is connected to a suction portion (not shown) such as a suction pump through a pipe such as a tube or a pipe. Here, the suction path of the suction hole 51e is configured to be switchable according to the size of the wafer W (for example, 8 inches and 12 inches). That is, the suction path for applying the suction force only to the suction holes 51e positioned corresponding to the inside of the small size wafer W shown in FIG. 16, and the positions corresponding to both the small size wafer W and the large size wafer W. It is possible to switch to a suction path that applies a suction force to the suction hole 51a.

  Here, in order to reduce the temperature unevenness of the heating stage 51, the smaller the diameter of the lift pins 51b, the better. Considering the lift-up load of the wafer W, for example, by setting the pin diameter to 1.0 mm and the hole diameter to 2.5 mm, temperature unevenness and lift mistakes can be prevented. Furthermore, in order to reduce the temperature unevenness of the heating stage 51, the smaller the hole diameter of the suction hole 51e, the better. For example, by setting the hole diameter to 0.6 mm, temperature unevenness and adsorption mistakes can be prevented. Further, in order to prevent cracks due to deformation of the wafer W due to suction, it is desirable that the suction hole 51e has a hole diameter of 0.6 mm or less. Although it is considered that the diameter of the lift pin 51b is smaller than 1.0 mm, the effect of suppressing temperature unevenness is considered to increase. However, since the rigidity is lowered, when the diameter is smaller than 1.0 mm, the weight of the wafer W is reduced. In view of the relationship with the number of lift pins 51b, it is preferable to make the size smaller as long as there is no hindrance to raising and lowering the wafer W. Further, the smaller the hole diameter of the suction hole 51e, the higher the effect of preventing temperature unevenness, but the suction force decreases. Therefore, the suction of the wafer W is determined based on the relationship between the suction force of each suction hole 51e and the number of suction holes 51e. It is good to make it as small as possible without causing any problems.

  Returning to FIG. 14, the rotation driving unit 52 is a rotation mechanism that supports the heating stage 51 and rotates it in the θ direction. The rotation drive unit 52 is electrically connected to the control unit 8, and the drive is controlled by the control unit 8.

  The movement drive unit 53 is a movement mechanism that supports the rotation drive unit 52 and moves it in the Y-axis direction. The movement drive unit 53 is electrically connected to the control unit 8, and the drive is controlled by the control unit 8. As the movement drive unit 53, for example, a feed screw drive unit using a servo motor as a drive source, a linear motor type drive unit using a linear motor as a drive source, or the like is used.

  Returning to FIG. 1, the stage conveyance driving unit 6 b includes a frame 61 that is long in the Y-axis direction that supports the stage 6 a, and a movement driving unit 62 that supports one end of the frame 61 and moves the frame 61 in the X-axis direction. And a guide portion 63 that supports the other end of the frame 61 so as to be movable in the X-axis direction.

  The stage transport driving unit 6b is a moving mechanism that guides and moves the stage 6a in the X-axis direction, and is provided on the gantry 1a. The movement drive unit 62 is electrically connected to the control unit 8, and its drive is controlled by the control unit 8. As the movement drive unit 62, for example, a feed screw drive unit using a servo motor as a drive source, a linear motor type drive unit using a linear motor as a drive source, or the like is used.

  In addition, an imaging unit 65 such as a camera has an imaging direction in a vertical direction above a standby position that is a position of the stage 6a that transfers the wafer W to and from the hand 3a of the conveyance unit 3 in the stage conveyance driving unit 6b. Downwardly supported by the Y-axis direction drive unit 66 so as to be movable in the Y-axis direction. The Y-axis direction drive unit 66 is supported on the gantry 1a by a support member (not shown). When the diced wafer W is placed on the stage 6a, the imaging unit 65 has corners of two chips at symmetrical positions with respect to a straight line passing through the notch N and the center of the wafer W at the periphery of the wafer W. An image including C (see FIG. 11) is taken. At this time, the imaging unit 65 is moved by the Y-axis direction driving unit 66 from the imaging position of the corner C of one chip to the imaging position of the corner C of the other chip.

  Note that the control unit 8 indicates in the storage unit whether or not position detection is necessary, such as information on whether the wafer W accommodated in the accommodating unit 2 is an undiced wafer W or a diced wafer W. Information is stored in advance, and based on this information, it is determined whether position detection using the imaging unit 65 is performed on the wafer W placed on the stage 6a, and position detection is necessary ( For example, position detection is performed in the case of a diced wafer W).

  Further, the supplied wafer W is an undiced wafer W, and is a wafer W in which the adhesive film is formed in a circular shape excluding the notch N up to the formation region of the notch N, and is applied by the coating unit 6. When the adhesive can be applied satisfactorily with positioning accuracy by the centering unit 4a and the pre-alignment unit 4b, information indicating that pre-alignment is necessary and information indicating that position detection using the imaging unit 65 is not necessary. It is preferable to perform storage so that the pre-alignment is performed and the position detection is not performed.

  Each coating head 6c is a discharge head that discharges a liquid adhesive as a plurality of droplets by an ink jet method toward the wafer W placed on the stage 6a. In the embodiment of the present invention, for example, seven coating heads 6c are provided. These coating heads 6c are arranged in a zigzag pattern in two rows in the Y-axis direction, and are provided so that adhesive droplets can be discharged onto the wafer W on the moving stage 6a. Each coating head 6 c is electrically connected to the control unit 8, and its driving is controlled by the control unit 8.

  The coating head 6c has a plurality of ejection holes (orifices) for ejecting droplets, and incorporates a plurality of piezoelectric elements respectively corresponding to the ejection holes. The coating head 6c ejects droplets from the ejection holes in response to the driving voltage applied to the piezoelectric elements by the control unit 8. Each discharge hole is arranged in a line or two lines in a straight line at a predetermined pitch (interval), and is formed on the discharge surface (orifice surface) of the coating head 6c. The nozzles of the seven coating heads 6c are arranged at an equal pitch as a whole when viewed from the X-axis direction, and are arranged over the entire length of the stage 6a in the Y-axis direction.

  Each coating head 6c is supported by a support portion 64 (see FIGS. 17 and 18) so that the adhesive can be discharged toward the wafer W on the moving stage 6a. As shown in FIGS. 17 and 18, the support portion 64 includes a holding member 64 a that houses and holds each coating head 6 c, a pair of support plates 64 b that support the holding member 64 a, and the holding member 64 a in the center. The frame body 64c supports the pair of support plates 64b, and the pair of gate pillars 64d supports the frame body 64c.

  The holding member 64a is formed to be long in the Y-axis direction, and is a member that holds and holds each coating head 6c by exposing the discharge surface of the coating head 6c. The pair of support plates 64b are members that support the holding member 64a from both sides in the Y-axis direction. The frame body 64c is formed long in the Y-axis direction, is positioned so as to straddle the moving stage 6a and the stage transport driving unit 6b, and is provided on the gantry 1a by a pair of gate pillars 64d. The gate pole 64d is formed in a gate shape that is long in the X-axis direction, and its beam portion is parallel to the X-axis direction, and its leg portion is fixed to the upper surface of the gantry 1a.

  In the embodiment of the present invention, the pair of gate pillars 64d are fixed to the gantry 1a to restrict the movement of each coating head 6c in the X-axis direction. However, the present invention is not limited to this. The gate pole 64d may be movable in the X-axis direction, and each coating head 6c may be moved in the X-axis direction.

  Returning to FIG. 1, the liquid feeding unit 6 d includes a pressurized tank 71 that stores a liquid adhesive, a supply tank 72 that supplies the adhesive to each coating head 6 c via a tube such as a tube or a pipe, and waste liquid. And a waste liquid tank 73. The liquid feeding unit 6 d is electrically connected to the control unit 8, and its driving is controlled by the control unit 8. In the supply tank 72, the liquid surface height is controlled so that the liquid surface height of the liquid adhesive stored in the supply tank 72 substantially coincides with the discharge surface of the coating head 6c. When the required height is reached, the liquid adhesive is pressurized and supplied from the pressurizing tank 71 to compensate for the shortage.

  The discharge stabilizing unit 6e includes a discharge confirmation unit 81 that performs discharge confirmation on each coating head 6c, a cleaning wet unit 82 that cleans and wets the discharge surface (orifice surface) of each coating head 6c, A discharge amount confirmation unit 83 for confirming the total discharge amount of the coating head 6c is provided.

  As shown in FIGS. 17 and 18, the discharge confirmation unit 81 includes a plurality (seven in the present embodiment) of imaging units 81 a provided in correspondence with each of the coating heads 6 c, and their imaging. A first raising / lowering drive part 81b for raising and lowering the part 81a to the retracted position and the imaging position, an imaging illumination part 81c, a receiving part 81d for receiving liquid droplets discharged from each coating head 6c, an illumination part 81c, It has the 2nd raising / lowering drive part 81e (refer FIG. 17) which raises / lowers the receiving part 81d.

  One imaging unit 81a is provided for one coating head 6c, and is arranged in a line in the Y-axis direction. The imaging unit 81a is configured to be able to move up and down between a retracted position that does not interfere with the coating operation and a work position that is an imaging position for performing ejection confirmation. The retreat position and the imaging position are located above the movement area of the stage 6a in the X-axis direction. The imaging unit 81 a is electrically connected to the control unit 8, and its driving is controlled by the control unit 8. For example, a CCD camera or the like is used as the imaging unit 81a.

  The raising / lowering drive part 81b is provided in the frame 64c of the support part 64, and is a moving mechanism which raises / lowers all the imaging parts 81a collectively. The elevating drive unit 81b has an air cylinder, and all the imaging units 81a are moved up and down by driving the air cylinder. The raising / lowering drive part 81b is electrically connected to the control part 8, and the drive is controlled by the control part 8. That is, the image pickup unit 81a is positioned at the work position and the retreat position by the lift drive unit 81b. The work position is slightly below the nozzle formation surface (lower surface) of the coating head 6c. The axis is located, and the droplet ejected from the nozzle of the coating head 6c can be imaged. The retreat position is above the working position and moves below the coating head 6c in the X-axis direction. It is set above the moving area of the stage 6a to be moved, and is a position where interference between the imaging unit 81a and the stage 6a is avoided.

  The illumination unit 81c is illumination that supplies the brightness required when all the imaging units 81a perform the imaging operation. The illumination unit 81c is configured to be movable up and down between a retracted position that does not interfere with the coating operation and a work position that is an irradiation position for irradiating light when performing discharge confirmation. The irradiation position is an opposite position with each imaging unit 81a and each coating head 6c in between, and is a position below all coating heads 6c. Moreover, the illumination part 81c is formed so that tilt adjustment is possible, and it inclines so that light may be irradiated toward the discharge surface of each coating head 6c in an irradiation position. The illumination unit 81 c is electrically connected to the control unit 8, and its driving is controlled by the control unit 8. As the illumination unit 81c, for example, line illumination is used. As an example of line-shaped illumination, illumination configured by arranging LEDs or the like in a line can be cited.

  The receiving portion 81d is a member that receives and stores the liquid droplets discharged from each coating head 6c when performing discharge confirmation, and is provided so as to face each coating head 6c supported by the support portion 64. The receiving portion 81d is configured to be movable up and down between a retracted position that does not interfere with the coating operation and a work position that is a receiving position for receiving droplets when performing discharge confirmation. The receiving part 81d is connected to a waste liquid tank 73 of the liquid sending part 6d through a pipe such as a tube or a pipe. The liquid droplets received from each coating head 6c are discharged as waste liquid, and the waste liquid is discharged to the waste liquid tank 73 through the pipe. Shed.

  The raising / lowering drive part 81e is provided in the mount 1a below the support part 64, and is a moving mechanism that supports and lifts the illumination part 81c and the receiving part 81d. The elevating drive unit 81 e is electrically connected to the control unit 8, and the drive is controlled by the control unit 8. As the elevating drive unit 81e, for example, a feed screw drive unit using a servo motor as a drive source is used. That is, the illumination part 81c and the receiving part 81d are positioned at the work position and the retracted position by the elevating drive part 81e. The working position of the illuminating unit 81c is a position where the light irradiation direction of the illuminating unit 81c intersects the optical axis of the imaging unit 81a positioned at the working position and the flying direction of the liquid droplets ejected from the nozzles of the coating head 6c. The working position of the receiving portion 81d is a height position at which an upper edge of the receiving portion 81d is between the nozzle forming surface of the coating head 6c and an interval at which the imaging unit 81a can image a droplet is formed. is there. The retreat position is set below the work position and below the moving region of the stage 6a that moves in the X-axis direction under the coating head 6c. At this position, the illumination unit 81c and the receiving unit are set. Interference between 81d and stage 6a is avoided. That is, the stage 6a passes above the illumination unit 81c and the receiving unit 81d positioned at the retracted position.

  Such a discharge confirmation unit 81 moves the imaging unit 81a, the illuminating unit 81c, and the receiving unit 81d to the respective work positions, turns on the illuminating unit 81c, and generates light necessary for imaging. Thereafter, the ejection confirmation unit 81 captures each droplet ejected from the corresponding coating head 6c by each imaging unit 81a, and further performs image processing on the captured image so that the straightness and shape of the droplet are normal. Compared with the image, the state of the coating head 6c is confirmed. After the confirmation, the discharge confirmation unit 81 turns off the illumination unit 81c and moves the receiving unit 81d to the retracted position.

  As shown in FIG. 19 and FIG. 20, the cleaning and humidifying unit 82 in FIG. 1 includes a box-shaped container 82a having an upper opening, a plurality of wipe members 82b provided in the container 82a, and the wipe members 82b. It has a nozzle 82c that sprays the solvent of the adhesive, and a movement drive unit (first movement drive unit) 82d that moves the container 82a up and down and moves in the X-axis direction. Here, the solvent is preferably a solvent contained in the adhesive.

  The container 82a can come into contact with the retreat position positioned below the moving height position of the stage 6a and the discharge surface (nozzle forming surface) of the coating head 6c so as not to obstruct the movement of the stage 6a in the X-axis direction. Move between the wiping position and the work position. The movement of the container 82a in the X-axis direction is performed so that at least the wipe member 82b moves in the X-axis direction over the range from one end to the other end of the ejection surface of the coating head 6c. Thereby, the wipe member 82b provided in the container 82a also moves with the container 82a. In addition, the container 82a is positioned adjacent to the conveyance unit 3 side in the X-axis direction with respect to the receiving unit 81d of the discharge confirmation unit 81 positioned at the retracted position at the retracted position.

  One wipe member 82b is provided for one coating head 6c, and a plurality of wipe members 82b are provided in two rows in the Y-axis direction. The wipe member 82b is a member that cleans and discharges the discharge surface of the coating head 6c in a wet state. For example, the wipe member 82b is formed of a member having water absorption. In the case where the adhesive attached to the discharge surface may be scraped off and cleaned, an elastic blade such as rubber may be used as a material.

  The nozzle 82c is a nozzle that sprays a solvent toward each wipe member 82b in order to wet each wipe member 82b before wiping the discharge surface of the coating head 6c. The nozzle 82c is formed in a tubular shape and is provided along the Y-axis direction. The nozzle 82c is provided with a plurality of through holes (not shown) for injecting the solvent corresponding to the wipe members 82b.

  The movement drive unit 82d is provided in the gantry 1a below the support unit 64, and is a moving mechanism that supports the container 82a and the wipe member 82b, moves up and down, and moves in the X-axis direction. The movement drive unit 82d is configured by combining a lift drive unit and an X-axis direction drive unit. The movement drive unit 82 d is electrically connected to the control unit 8, and its drive is controlled by the control unit 8. As the elevating drive unit and the X-axis direction drive unit constituting the movement drive unit 82d, for example, a feed screw drive unit using a servo motor as a drive source, a linear motor type drive unit using a linear motor as a drive source, or the like is used.

  Such a cleaning / wetting unit 82 moves the container 82a from the retracted position through the wiping position to the original standby position by the movement driving unit 82d, and discharges the corresponding coating head 6c by each wipe member 82b in the container 82a. The surface is wiped and the discharge surface is wetted. Each wipe member 82b is in a wet state due to the supply of the solvent by the nozzle 82c.

  In the above case, since the wipe member 82b has water absorption, the wiped adhesive is not absorbed by the wipe member 82b and falls off the wipe member 82b even if the ejection surface of the coating head 6c is wiped. Therefore, the container 82a and the nozzle 82c may be fixed at the standby position, and only the wipe member 82b may be moved from the retracted position to the wiping position by the movement drive unit 82d.

  As shown in FIGS. 21 and 22, the discharge amount confirmation unit 83 in FIG. 1 includes a box-shaped housing 83a having a shutter S, a weighing electronic balance 83b, and a weighing container provided on the electronic balance 83b. 83c, an opening / closing drive unit 83d that opens and closes the shutter S, and a movement drive unit (second movement drive unit) 83e that moves the housing 83a in the Y-axis direction.

  The casing 83a is configured to be movable to a retracted position that does not interfere with the coating operation, and to a work position determined corresponding to each coating head 6c that is a weighing position for positioning the weighing container 83c below each coating head 6c. It is held by the movement drive unit 83e. The retreat position is set to the side of the moving area of the stage 6a that moves in the X-axis direction. The casing 83a is formed with a shutter S that can be opened and closed. The shutter S is opened and closed when measuring.

  The electronic balance 83b is provided in the casing 83a and below the shutter S, and measures the weight of the object in the measuring container 83c. The electronic balance 83 b is electrically connected to the control unit 8, and its driving is controlled by the control unit 8, and the measured value is output to the control unit 8.

  The measuring container 83c is provided on the electronic balance 83b in the housing 83a, and takes in the droplets discharged from the individual coating heads 6c. The measuring container 83c has a quadrangular shape in plan view, and the dimension in the Y-axis direction is a length dimension for taking in all droplets discharged from one coating head 6c, and the dimension in the X-axis direction is two rows. It is a length dimension that can be taken in without changing the position in the X-axis direction even if the liquid droplet is ejected from any of the two coating heads 6c arranged in the X direction.

  The opening / closing drive unit 83d is provided in the housing 83a and is a moving mechanism that moves the shutter S in the X-axis direction. The opening / closing drive unit 83d has an air cylinder, and the shutter S is moved in the X-axis direction by driving the air cylinder to open / close. The opening / closing drive unit 83 d is electrically connected to the control unit 8, and its drive is controlled by the control unit 8.

  The movement drive unit 83e is disposed above the X direction movement region of the stage 6a, and supports the casing 83a in a suspended state. The movement drive unit 83 e is electrically connected to the control unit 8, and the drive is controlled by the control unit 8. As the movement drive unit 83e, for example, a feed screw drive unit using a servo motor as a drive source, a linear motor type drive unit using a linear motor as a drive source, or the like is used.

  Such a discharge amount confirmation unit 83 moves the electronic balance 83b to the weighing position in the Y-axis direction, positions the casing 83a, that is, the weighing container 83c below each coating head 6c, opens the shutter S, and then After the droplets are ejected from the nozzles of the coating head 6c a set number of times, the shutter S is closed. Then, the total amount of all droplets ejected from one coating head 6c is sequentially obtained for each coating head 6c from the output difference of the electronic balance 83b before and after ejection. After the measurement, the electronic balance 83b, that is, the casing 83a is moved to the standby position in the Y-axis direction.

  As shown in FIG. 23, the cleaning unit 6f in FIG. 1 includes a nozzle 91 that blows out a gas such as nitrogen or air, a pipe 92 that sends gas to the nozzle, and a filter 93 that is provided in the middle of the path of the pipe 92. It has a flow rate adjusting valve 94 and an on-off valve 95, and a suction part 96 that sucks together foreign matter such as dust and dirt scattered from the wafer W on the stage 6a by blowing out gas from the nozzle 91 together with air.

  The nozzle 91 has an outlet 91a which is an opening for blowing gas to the wafer W on the moving stage 6a. The nozzle 91 has a blower outlet 91a directed toward the X axis direction movement region of the stage 6a, and is disposed above the region. As the nozzle 91, for example, a nozzle having a slit-like outlet extending in the Y-axis direction, a nozzle having a plurality of circular outlets arranged in the Y-axis direction, or the like is used. The size of the blower outlet 91a in the Y-axis direction is formed to be greater than the length of the stage 6a in the Y-axis direction.

  The pipe 92 is configured by a tube, a pipe, or the like that communicates the nozzle 91 and a gas supply unit (not shown). The filter 93 is a member that removes foreign matters from the gas passing through the pipe 92. The flow rate adjusting valve 94 is a valve that adjusts the amount of gas flowing in the pipe 92, and the open / close valve 95 is a valve that opens and closes the pipe 92. The flow rate adjusting valve 94 and the on-off valve 95 are electrically connected to the control unit 8 and the driving thereof is controlled by the control unit.

  The suction part 96 is formed in a box shape having a suction port 96a which is an opening extending in the Y-axis direction. The suction part 96 is disposed above the suction port 96a with the suction port 96a directed to the X axis direction movement region of the stage 6a. The suction port 96a has a size in the Y-axis direction that is greater than the length of the stage 6a in the Y-axis direction. Preferably, it is larger than the opening area of the blower outlet 91a of the nozzle 91, and is formed more than the length of the blower outlet 91a in the Y-axis direction. Further, it is preferable that the flow rate of the gas sucked from the suction port 96a of the suction unit 96 is larger than the flow rate of the gas ejected from the air outlet 96a of the nozzle 91.

  The cleaning unit 6f blows gas to the wafer W on the moving stage 6a by the nozzle 91 to clean the application surface of the wafer W. Thereby, the application surface of the wafer W is cleaned before application of the adhesive, and foreign matter is prevented from being present on the application surface of the wafer W, so that the application quality of the wafer W can be improved. Further, the cleaning unit 6f sucks foreign matter scattered from the application surface of the wafer W on the stage 6a by the suction unit 96 together with air. As a result, foreign matter scattered from the application surface of the wafer W is prevented from adhering to other apparatus parts or adhering to the wafer W again, so that apparatus contamination and re-contamination of the wafer W can be prevented. it can.

  The drying unit 7 in FIG. 1 is for temporarily drying the adhesive applied to the wafer W before the curing step for curing the adhesive, which is provided separately from the semiconductor manufacturing apparatus 1 as a post-process. 7 and FIG. 24, a plurality of heater plates 101 and a support portion 102 that supports them in a stacked state by separating them by a predetermined interval. In the embodiment of the present invention, the heater plate 101 is provided in five stages, for example.

  The heater plate 101 is a mounting table on which the wafer W is mounted in a horizontal state, and heats the wafer W in the mounted state. In the heater plate 101, rod-shaped heaters 101a are arranged at almost equal intervals. In addition, the arrangement | positioning space | interval of the heater 101a located in an edge part (both ends) is narrow. This is because the heater 101a does not exist outside the heater 101a located at the end, so the heat radiation on the outer peripheral side is larger than the center side of the heater plate 101, and the temperature of the outer peripheral portion is likely to decrease. This is because the heater 101a positioned is brought closer to the adjacent heater 101a as much as the outer peripheral portion can easily dissipate heat to prevent a temperature drop due to heat dissipation. The heating of the wafer W by the heater plate 101 is to promote drying of the adhesive applied to the application surface of the wafer W.

  Here, the temperature control of the heater plate 101 is performed by feedback control using a temperature measuring device T such as a resistance temperature detector. Since there is a temperature difference between the measured value of the resistance temperature detector inserted as the temperature measuring instrument T in the heater plate 101 and the surface (or ambient temperature) of the heater plate 101, the temperature difference is corrected in advance and used for control. The temperature is set. The temperature is set, for example, with respect to a storage unit included in the control unit 8.

  The heater plate 101 is provided with a plurality of rod-like lift pins 101b that can be moved up and down. These lift pins 101 b are pins for delivering the wafer W to and from the hand 3 a of the transport unit 3. Each lift pin 101b is erected on the support plate 101c. The support plate 101c is disposed on the lower side of the heater plate 101, and is configured to move up and down by an air cylinder 101d. As a result, all the lift pins 101b on the single support plate 101c are moved up and down simultaneously. Further, as shown in FIG. 24, each lift pin 101b is arranged so as to avoid the arrangement position of the heater 101a and not to interfere with the hand 3a entering the heater plate 101 for delivery of the wafer W.

  A plurality of lift pins 101b, a support plate 101c, and an air cylinder 101d for one heater plate 101 function as one switching unit. The switching unit switches between a contact state in which the wafer W and the heater plate 101 are in contact with each other and a separated state in which the wafer W and the heater plate 101 are separated by a predetermined distance. Therefore, the wafer W is dried by the heat of the heater plate 101 in either the contact state or the separated state.

  Furthermore, the heater plate 101 is provided with a plurality of suction holes 101e as shown in FIG. The respective suction holes 101e are provided so as to be distributed almost evenly in the holding region of the wafer W while avoiding the arrangement positions of the heaters 101a and the lift pins 101b. These suction holes 101e communicate with a suction path (not shown), and the suction path is connected to a suction portion (not shown) such as a suction pump through a pipe such as a tube or a pipe.

  The suction path of the suction hole 101e is configured to be switchable according to the size of the wafer W (for example, 8 inches and 12 inches). That is, it corresponds to the suction path for applying a suction force only to the suction hole 101e positioned corresponding to the suction range of the small wafer W and the suction range of both the small wafer W and the large wafer W. It is possible to switch to a suction path in which a suction force is applied to the suction hole 101a positioned at a position.

  Here, in order to reduce the temperature unevenness of the heater plate 101, the smaller the diameter of the lift pins 101b, the better. Considering the lift-up load of the wafer W, for example, by setting the pin diameter to 1.0 mm and the hole diameter to 2.5 mm, temperature unevenness and lift mistakes can be prevented. Furthermore, in order to reduce the temperature unevenness of the heater plate 101, the smaller the hole diameter of the suction hole 101e, the better. For example, by setting the hole diameter to 0.6 mm, temperature unevenness and adsorption mistakes can be prevented. Further, in order to prevent cracks due to deformation of the wafer W due to suction, it is desirable that the suction hole 101e has a hole diameter of 0.6 mm or less. Although it is considered that the diameter of the lift pin 101b is smaller than 1.0 mm, the effect of suppressing temperature unevenness is considered to increase. However, since the rigidity is lowered, when the diameter is smaller than 1.0 mm, the weight of the wafer W is reduced. In view of the relationship with the number of lift pins 101b, it is preferable to make the size smaller as long as there is no problem in raising and lowering the wafer W. Also, the smaller the hole diameter of the suction hole 101e, the higher the effect of preventing temperature unevenness, but the suction force decreases. Therefore, from the relationship between the suction force of each suction hole 101e and the number of suction holes 101e, the suction of the wafer W is reduced. It is good to make it as small as possible without causing any problems.

  Further, in order to suppress drying unevenness due to the heater plate 101, the stop position of each lift pin 101 b may be changed by the control unit 8 in accordance with the temperature measured by the temperature measuring device T. Since the heater plates 101 are stacked, the space temperature between the heater plates 101 is likely to rise, and it is difficult to reliably suppress drying unevenness only by controlling the temperature of the heater plate 101. Therefore, the amount of heat given from the heater plate 101 to the wafer W can be controlled by changing the stop position of each lift pin 101b and adjusting the distance between the heater plate 101 and the wafer W. For example, when the temperature of the heater plate 101 rises more than necessary, the distance between the heater plate 101 and the wafer W is increased accordingly. In particular, it is possible to adjust the amount of heat given to the wafer W earlier than controlling the temperature of the heater plate 101. Thereby, the adhesive can be uniformly dried while suppressing drying unevenness of the adhesive on the wafer W. Further, the stop position of the lift pin 101b of each heater plate 101 may be adjusted so that the separation distance between the heater plate 101 and the wafer W increases from the lower stage toward the upper stage.

  Furthermore, a temperature measuring device for measuring the temperature of the space on the heater plate 101 is provided, and the heater plate 101 and the wafer are measured based on the result of comprehensive determination of the measured temperatures of both the temperature measuring device and the temperature measuring device T. The separation distance from W, that is, the stop position of the lift pin 101b may be adjusted. In this case, since not only the heater plate 101 but also the amount of heat given by the ambient temperature can be taken into account, uneven drying of the adhesive can be more reliably suppressed. The stop position of the lift pin 101b may be adjusted based only on the measurement result of the space temperature on the heater plate 101.

  Note that the temperature of the plurality of stacked heater plates 101 is set so that the temperature of the upper stage is lower than the lower stage, for example, the set temperature is gradually lowered as it goes to the upper stage, or the uppermost heater plate 101 The set temperature of 101 may be set lower than the set temperature of the other heater plate 101. This is because the air heated by each heater plate 101 rises along the wall plate 102a, so that the upper heater plate 101 tends to reach a higher temperature.

  As shown in FIG. 7, the support portion 102 includes a pair of wall plates 102 a and a plurality of support members 102 b. The pair of wall plates 102a are arranged so as to sandwich the heater plates 101 in the horizontal state from the horizontal direction. Each support member 102b is fixed to a pair of wall plates 102a so as to support the four corners of the heater plate 101. That is, one heater plate 101 is supported by the four support members 102b. Each of these supporting members 102b supports the heater plate 101 via a heat insulating member 102c.

  Here, the operating rod of the air cylinder 101d is connected to the vicinity of the center of a connecting rod (not shown) provided horizontally. Both ends of the connecting rod are supported on the outside of the wall plate 102a through a guide member (not shown) so as to be movable up and down. The connecting rod is also connected to the support plate 101c of the lift pin 101b. Thereby, the lift pin 101b can be moved up and down by the air cylinder 101d.

  Returning to FIG. 1, the control unit 8 includes a microcomputer that centrally controls each unit, and a storage unit that stores application information related to application, various programs, and the like. The control unit 8 is connected to an operation unit 8a that receives an operation from the operator.

  The application information includes a predetermined application pattern such as a dot pattern, information relating to the ejection frequency of the application head 6c and the moving speed of the wafer W. This application information is stored in advance in the storage unit by an input operation to the operation unit 8a, data communication, or mediation of a portable storage device. Note that various memories, a hard disk drive (HDD), and the like are used as the storage unit.

  The control unit 8 controls the coating head 6c and the stage transport driving unit 6b based on the coating information when performing the coating operation, and controls the ejection stabilizing unit 6e when performing the stable ejection operation. Here, the application operation is an operation of applying an adhesive to the wafer W on the stage 6a, and the discharge stable operation is a discharge confirmation operation, a wet wipe operation, a discharge amount confirmation operation, or the like.

  Next, a manufacturing operation (manufacturing method) performed by the semiconductor device manufacturing apparatus 1 will be described. Note that the control unit 8 of the manufacturing apparatus 1 executes a manufacturing process (including a discharge stabilization process) based on various programs.

  As shown in FIG. 25 (see also FIG. 1), the wafer W is taken out from the storage unit 2 by the transport unit 3 and transported to the alignment unit 4 (step S1). First, the transport unit 3 operates the arm 3b to take out the wafer W from the loading storage unit 2 with the hand 3a. More specifically, the height position corresponding to the support plate 2a that supports the wafer W to be transported this time in the loading storage portion 2, specifically, the support plate 2a and the reinforcing member 12 of the support plate 2a. The hand 3a is raised to a position between the two, the arm 3b is extended, the hand 3b is moved into the lower side of the wafer W supported by the support plate 2a, and the arm 3b is raised to scoop up the wafer W from the lower side. After adsorbing and receiving, the arm 3b is contracted, and then the arm 3b is lowered to the original height position.

  After that, the arm 3b is moved together with the hand 3a in the X-axis direction and turned in the θ direction to stand by at the transfer position with respect to the alignment unit 4. Next, the transport unit 3 operates the arm 3 b to deliver the wafer W to the centering unit 4 a of the alignment unit 4 by the hand 3 a. More specifically, the transport unit 3 extends the arm 3b in the direction of arrow A1 in FIG. 1 to move the hand 3a to the upper side of the support 31 of the centering unit 4a, and then releases the suction by the hand 3a. 3b is lowered to allow the hand 3a to enter the concave portion of the support base 31, and the support portions 3a1 constituting the comb teeth of the hand 3a are combined with the support portions 31a constituting the comb teeth of the support base 31. In the descending process, the wafer W on the hand 3 a is placed on the support base 31.

  Thereafter, alignment is performed by the alignment unit 4 (step S2). First, the centering unit 4 a aligns the wafer W with the hand 3 a of the transport unit 3. In a state where the support portions 3a1 constituting the comb teeth of the hand 3a are combined with the support portions 31a constituting the comb teeth of the support base 31, the centering portion 4a is directed in three directions toward the wafer W on the support base 31. The lever portion 32a of each pressing portion 32 is moved to a preset stop position. As a result, the pin of each lever portion 32a is pressed against the outer periphery of the wafer W, the wafer W is moved in a plane, and the center of the wafer W is aligned with the center of the support base 31 and positioned relative to the support base 31. Positioning (centering) is performed to align the center of the hand 3a with the center of the wafer W with the center of the wafer W. When the centering is completed, each lever portion 32a moves back to the original position and stands by.

  Next, the pre-alignment unit 4b performs alignment in the θ direction. That is, when information that requires pre-alignment is stored in the storage unit, the control unit 8 causes the pre-alignment unit 4b to perform pre-alignment. The hand 3a in a state of being combined with the comb teeth of the support base 31 rises and sucks and receives the wafer W placed on the support base 31, and can be attracted by the holding part 41 of the pre-alignment part 4b. When raised to the position, the pre-alignment unit 4b attracts and holds the wafer W on the hand 3a to the lower surface of the holding unit 41. At this time, the suction of the wafer W by the hand 3a is stopped at a timing when the delivery is good, and when the delivery is completed, the hand 3a waits for a predetermined distance that does not disturb the rotation of the wafer W. At this time, the pre-alignment unit 4b moves the imaging unit 43 in advance to the imaging position corresponding to the size of the wafer W by the movement driving unit 44. Thereafter, while rotating the holding unit 41 by the rotation driving unit 42, the imaging unit 43 sequentially images the outer peripheral portion of the wafer W through the openings H of the flat plates 45 and 46 at a set timing.

  For each imaging, the pre-alignment unit 4b performs image processing on the captured image by the image processing calculation unit, and determines whether there is a pattern that matches a pre-stored reference notch. If there is a pattern (notch N) that matches the reference notch, the correction amount in the θ direction is calculated from the position of the notch N. Next, the control unit 8 rotates the holding unit 41 by the calculated correction amount, and raises the hand 3 a to a position where the hand 3 a contacts the lower surface of the wafer W held by the holding unit 41. When the hand 3a rises to a position where it comes into contact with the lower surface of the wafer W, the suction of the hand 3a is started, the suction of the wafer W by the holding portion 41 of the pre-alignment portion 4b is stopped, and the wafer W on the lower surface of the holding portion 41 is moved. Give to hand 3a. When the hand 3a receives the wafer W from the lower surface of the holding unit 41 and holds it by suction, the positioning of the wafer W relative to the hand 3a by the positioning unit 4 is completed.

  Thereafter, the wafer W is transferred from the alignment unit 4 to the irradiation unit 5 by the transfer unit 3 (step S3). If the hand 3a receives and holds the wafer W from the holding unit 41 of the alignment unit 4, the arm 3b is contracted to retract the hand 3a from the alignment unit 4, and further the arm 3b is turned in the θ direction. The wafer W is positioned at the irradiation work start position by the irradiation unit 5.

  Next, UV irradiation is performed by the irradiation unit 5 (step S4). The irradiation unit 5 irradiates the application surface of the wafer W on the hand 3a moving by the operation of the arm 3b with the UV lamp 5a, and performs surface modification. At this time, the hand 3a reciprocates below the UV lamp 5a by the advance / retreat operation of the arm 3b. The illuminance of the UV lamp 5a is controlled to be constant at a predetermined value. After the irradiation, the hand 3a moves backward to the same position as the irradiation work start position.

  Next, the wafer W is transported from the irradiation unit 5 to the coating unit 6 by the transport unit 3 (step S5). The transport unit 3 turns the arm 3b in the θ direction to bring the hand 3a to the position where the wafer W is transferred to the coating unit 6, and then extends the arm 3b in the direction of arrow A2 in FIG. 1 to move the wafer W by the hand 3a. It moves toward the stage 6a positioned at the standby position in the coating unit 6. When the hand 3a is positioned on the stage 6a, the transport unit 3 lowers the arm 3b. The stage 6a stands by raising the lift pins 51b, and the wafer W on the hand 3a that is lowered by the lowering of the arm 3b is transferred from the hand 3a to the lift pins 51b. The adsorption of the wafer W by the hand 3a is released after the arm 3b starts to descend until the wafer W contacts the lift pin 51b.

  Here, when the wafer W is delivered, the hand 3a is positioned so that the center thereof coincides with the center of the stage 6a waiting at the standby position (the rotation center by the rotation drive unit 52). Therefore, although the center of the arrangement circle of the hold pin 21 is the center of the hand 3a, when the hold pin 21 is not provided, the hand 3a is positioned at the center of the stage 6a when the hand 3a is positioned with respect to the stage 6a at the standby position. The point on the hand 3a to be opposed may be the center of the hand 3a.

  When the hand 3a is retracted from the stage 6a by the contraction operation of the arm 3b, the lift pin 51b is lowered to place the wafer W on the stage 6a, and the suction force of the suction hole 51e of the stage 6a is applied to hold the wafer W by suction. To do. On the other hand, the hand 3a stands by at the delivery position. Here, the delivery position of the wafer W with respect to the alignment section 4, the irradiation work start position with respect to the irradiation section 5, and the delivery position of the wafer W with respect to the application section 6 of the transport section 3 differ only in the direction of the hand 3 a. The positions in the X axis direction are the same.

  Then, application | coating is performed by the application part 6 (step S6). If the wafer W placed on the stage 6a at the standby position by the hand 3a is an undiced wafer W, the coating unit 6 moves the stage 6a from the standby position in the X-axis direction by the movement drive unit 53. On the other hand, if the wafer W placed on the stage 6a is a diced wafer W, the coating unit 6 uses the imaging unit 65 to display an image including the corners C of the two chips set on the wafer W. Images are individually picked up, and the positional deviation of the wafer W in the XYθ direction is detected with high accuracy from the position information of the two corners C obtained based on the picked-up image. Then, after correcting the position of the stage 6a based on the detected displacement, the stage 6a is moved in the X-axis direction from the standby position. As described above, the control unit 8 causes the application unit 6 to selectively perform position detection based on the information stored in the storage unit whether or not to perform position detection using the imaging unit 65.

  This is because the undiced wafer W only needs to be coated (solid coating) with an adhesive on the entire surface thereof, so that high alignment accuracy is not required and alignment accuracy by the alignment unit 4 is sufficient. Because. On the other hand, the diced wafer W may apply the adhesive only to the application surface on each chip so that the adhesive is not applied in the cut line L. This is because an alignment accuracy higher than the alignment accuracy by is required.

  The application unit 6 sprays gas onto the application surface of the wafer W on the stage 6a moving in the X-axis direction by the nozzle 91 of the cleaning unit 6f to clean the application surface, and further removes foreign matter scattered from the application surface. Is sucked by the suction part 96. Next, the application unit 6 discharges an adhesive from each nozzle of each application head 6c in accordance with the timing when the wafer W on the stage 6a moving in the X-axis direction passes below each application head 6c. Apply adhesive to the application surface. After the application, the application unit 6 moves the stage 6 a to the standby position in the X-axis direction by the movement drive unit 53.

  The adhesive is applied so that the adhesive is applied to the entire application surface of the wafer W (solid application), or is applied to a predetermined area for each chip based on the application pattern. It is done. That is, when the current wafer W is an undiced wafer W, the solid coating pattern is stored in the storage unit of the control unit 8 in advance, and when the current wafer W is a diced wafer W, The adhesive application pattern is stored in advance in the storage unit of the control unit 8 together with the position information of each chip, and the control unit 8 applies the adhesive from each nozzle of each application head 6c based on the information stored in the storage unit. To control the discharge.

  Further, during the application operation, the wafer W is heated by the heating stage 51 of the stage 6a so as to reach a desired temperature, and drying of the adhesive applied to the application surface of the wafer W is promoted. As a result, drying of the adhesive on the wafer W is accelerated by heat and the fluidity is drastically reduced. Therefore, when the adhesive is applied to the application surface of the wafer W at room temperature, the adhesive has a desired thickness. The adhesive applied in an amount necessary for forming the film flows in the slow drying process, and the film thickness does not become uniform, or while the wafer W to which the adhesive is applied is conveyed to the drying unit 7. It is possible to prevent a liquid flow in which the adhesive flows unevenly due to a speed change or centrifugal force generated in the wafer W.

  In addition, the application of the adhesive to the wafer W may be completed by passing the wafer W once under the coating head 6c, or may be reciprocated or passed three times or more and further applied onto the adhesive that has already been applied. In some cases, adhesives are applied in layers. When the adhesive is applied in layers, if the wafer W is heated to promote drying of the adhesive applied to the application surface of the wafer W, the adhesive is applied first when the adhesive is applied in layers. Since the fluidity of the adhesive is reduced by drying, there is an advantage that the adhesive can be laminated satisfactorily by suppressing wetting and spreading of the adhesive.

  Next, the wafer W is transported from the coating unit 6 to the drying unit 7 by the transport unit 3 (step S7). The transfer unit 3 extends the arm 3b in the direction of arrow A2 in FIG. 1 at the transfer position, and receives the wafer W from above the stage 6a positioned at the standby position in the coating unit 6 by the hand 3a. At this time, the stage 6a releases the suction of the wafer W, lifts the lift pin 51b and stands by, and the transport unit 3 inserts the hand 3a between the stage 6a and the wafer W so as to scoop up the wafer W from below. Hold by adsorption. Further, the arm 3b is contracted and swung in the θ direction so that the hand 3a is positioned at a delivery position with respect to the drying unit 7. Here, the delivery position for the drying unit 7 is the same position as the delivery position for the alignment unit 4. Thereafter, the wafer W is placed on the vacant heater plate 101 in the drying unit 7. For example, when all five heater plates 101 are empty, the wafers W are sequentially placed from the uppermost heater plate 101 toward the lower stage.

  In delivering the wafer W to the heater plate 101, first, the arm 3b is raised to position the hand 3a at a height position corresponding to the heater plate 101 on which the wafer W is placed. Next, the arm 3b is extended in the direction of arrow A1 in FIG. 1 to move the hand 3a onto the heater plate 101, and then the arm 3b is lowered. On the other hand, the heater plate 101 rises and waits for the lift pin 101b, and when the hand 3a descends, the wafer W on the hand 3a is transferred onto the lift pin 101b. The adsorption of the wafer W by the hand 3a is released after the arm 3b starts to descend until the wafer W contacts the lift pin 101b. When the hand 3a is retracted from the heater plate 101 by the contraction operation of the arm 3b, the lift pin 101b is lowered and the wafer W is placed on the heater plate 101 and is sucked and held by the suction force of the suction hole 101e of the heater plate 101. The retracted hand 3a returns to the delivery position and waits for the next operation. At this time, since the drying operation by the drying unit 7 requires a longer time than the operations by the alignment unit 4, the irradiation unit 5, and the coating unit 6, the predetermined drying time of the wafer W by the drying unit 7 elapses. In the meantime, the conveyance unit 3 may be driven to perform the operations of supplying the next wafer W, positioning, UV irradiation and coating.

  Next, drying is performed by the drying unit 7 (step S8). When the wafer W is placed on the heater plate 101 by the hand 3a, the drying unit 7 heats the wafer W on the heater plate 101. In this state, the wafer W is heated for a predetermined drying time, and the adhesive applied on the wafer W is dried. Since the heater plate 101 of the drying unit 7 has multiple stages, the drying unit 7 can stock the wafers W by the number of stages. The heater plate 101 may be always heated to the set temperature by the heater 101a, or may be heated in accordance with the timing at which the wafer W is supplied. At this time, it takes a certain amount of time to heat the heater plate 101 once lowered in temperature to the set temperature. For example, the heater plate on which the wafer W is to be placed during the coating operation by the coating unit 6. It is preferable to start heating 101.

  Finally, the wafer W is transported from the drying unit 7 to the storage unit 2 by the transport unit 3 (step S9). The transport unit 3 raises the arm 3b according to the height position of the heater plate 101 on which the wafer W to be unloaded at the delivery position is placed, and then extends the arm 3b to receive the wafer W by the hand 3a. At this time, the heater plate 101 releases the suction of the wafer W, lifts the lift pin 101b and stands by, and the hand 3a enters between the heater plate 101 and the wafer W and scoops up the wafer W from below. Hold by adsorption. Thereafter, the arm 3b is contracted to return the hand 3a to the delivery position, and the arm 3b is moved in the X-axis direction and pivoted in the θ direction to be positioned at the delivery position with respect to the accommodating portion 2. Next, the transport unit 3 operates the arm 3b to deliver the wafer W to the unloading storage unit 2 by the hand 3a. That is, since the support plate 2a in which the wafer W to which the adhesive has been applied is accommodated is empty among the support plates 2a of the accommodating portion 2, the wafer W that has been applied is returned to the support plate 2a. Thus, the arm 3b is moved up and down and expanded and contracted.

  By such an operation, the application of the adhesive to one wafer W is completed. The above operation is repeated until the application of the adhesive to all the wafers W accommodated in the accommodating portion 2 is completed.

  In this manufacturing process, the ejection stabilization operation is performed periodically (every application or every predetermined time) or at a designated time at a timing when the application operation is not performed. As the stable discharge operation, a discharge confirmation operation is performed by the discharge confirmation unit 81, a wet wipe operation is performed by the cleaning wet unit 82, and a discharge amount confirmation operation is performed by the discharge amount confirmation unit 83.

  In the state where the stage 6a is kept at the standby position, the discharge confirmation unit 81 moves the receiving unit 81d to the receiving position, turns on the illumination unit 81c, and then discharges from the corresponding coating head 6c by each imaging unit 81a. Each of the droplets taken is imaged from the lateral direction. Next, the discharge confirmation unit 81 performs image processing on the captured image, compares the presence / absence of droplets, straightness, shape, and the like with normal images, and confirms the discharge state from each nozzle of the coating head 6c. After the confirmation, the discharge confirmation unit 81 turns off the illumination unit 81c and moves the receiving unit 81d to the retracted position. Thereby, the discharge state from each nozzle of the application head 6c is confirmed, and maintenance is performed when there is a problem in the state, so that it is possible to suppress the occurrence of defective application of the adhesive due to the discharge abnormality. .

  The cleaning / wetting unit 82 moves the container 82a from the standby position through the wiping position to the original standby position by the movement driving unit 82d, and wipes the discharge surface of the corresponding coating head 6c by each wipe member 82b in the container 82a. To do. Each wipe member 82b is in a wet state due to the supply of the solvent by the nozzle 82c. Thereby, while the adhesive adhering to the discharge surface of the coating head 6c is wiped off, the discharge surface after wiping off the adhesive can be brought into a wet state. For this reason, it is possible to prevent the adhesive remaining on the ejection surface of the coating head 6c from being wiped off and the newly deposited adhesive from being subsequently ejected from the nozzle of the coating head 6 from drying and becoming a solidified product. Therefore, it is possible to suppress the occurrence of discharge abnormality such as discharge bending due to adhesion of adhesive solidified around the nozzle on the discharge surface. Moreover, since the adhesive in the nozzle 82c is prevented from drying and thickening after the wiping is completed until the next discharge is started, the occurrence of non-discharge due to the thickening of the adhesive is prevented. Can be suppressed. Therefore, it is possible to suppress the occurrence of defective application of the adhesive due to the ejection abnormality.

  The discharge amount confirmation unit 83 moves the electronic balance 83b to the weighing position in the Y-axis direction, positions the weighing container 83c below each coating head 6c, opens the shutter S, and then sets from all nozzles of the coating head 6c. The droplets are ejected by the number of times, and the total amount of all droplets ejected from one coating head 6c is sequentially obtained for each coating head 6c from the output difference of the electronic balance 83b before and after ejection. After the measurement, the discharge amount confirmation unit 83 closes the shutter S and moves the electronic balance 83b to the standby position in the Y-axis direction. Thereby, the discharge amount of the droplet is confirmed, and if there is a problem with the discharge amount, maintenance (cleaning of the discharge surface of the coating head 6c, adjustment of the discharge amount from each nozzle of the coating head 6c, etc.) is performed. Therefore, it is possible to suppress the occurrence of an abnormal discharge amount.

  As described above, according to the embodiment of the present invention, the adhesive is applied by the application head 6c toward the wafer W on the stage 6a and the irradiation unit 5 that irradiates the wafer W moved by the transport unit 3 with ultraviolet rays. By providing a coating unit 6 for discharging and applying, and a drying unit 7 for drying the adhesive applied to the wafer W by heat, the irradiation unit 5 performs surface modification of the application surface of the wafer W. An adhesive is discharged and applied to the application surface by the application head 6 c, and the adhesive on the application surface is dried by heat from the drying unit 7. Accordingly, the degree of adhesion between the coated surface of the wafer W and the adhesive and the leveling property of the adhesive (uniformity of wetting and spreading) are improved by the surface modification, and further, the adhesive is applied by the application head 6c and is dried by the drying unit 7. By drying, a film having a desired film thickness of the adhesive can be uniformly applied and formed on the application surface of the wafer W without using a conventional adhesive sheet. Thus, even when an adhesive is used, when the chip diced from the wafer W is mounted on a circuit board or another chip, the adhesive coating film and circuit formed on the chip are mounted. Generation of a gap (void) between the substrate and the like can be prevented, and the reliability of the bonding performance of the chip to the circuit substrate or the like can be improved. Further, the adhesive is applied only to a portion on the wafer W where an adhesive film needs to be formed. As a result, compared to the case where an adhesive sheet that requires an area larger than the wafer W is used, the material cost of the adhesive can be reduced and the material use efficiency can be improved. In addition, a high-quality semiconductor device can be obtained. Can be manufactured.

  Further, gas is blown toward the application surface of the wafer W placed on the stage 6a, the application surface is cleaned, and foreign matter scattered from the application surface by the cleaning is sucked onto the application surface of the wafer W. The presence of foreign matter and the removal of foreign matter removed by gas blowing are prevented from re-adhering, so that it is possible to improve the coating quality of the wafer W, and as a result, a high-quality semiconductor device is manufactured. Can do. That is, foreign matter is prevented from entering the adhesive coating film formed on the wafer W, so that a chip diced and separated from the wafer W and a circuit board or other chip to be joined It is possible to prevent the occurrence of electrical defects such as defective insulation and physical defects such as cracks and chips due to the presence of foreign matter between them.

  The irradiation unit 5 also includes a lamp 5a that generates ultraviolet rays, a sensor 5c that detects the amount of ultraviolet rays generated by the lamp 5a, and a wafer W based on the amount of ultraviolet rays detected by the sensor 5c. Adjustment means (for example, the lamp movement drive unit 5b) for adjusting the irradiation light amount with respect to the coating surface to a set value, the irradiation light amount of the UV light irradiated to the wafer W by the irradiation unit 5 is Since the set value is maintained and the amount of irradiation light is prevented from fluctuating, the surface modification of the back surface (application surface) of the wafer W can be performed reliably and stably. Therefore, it is possible to improve the coating quality of the wafer W, and as a result, it is possible to reliably manufacture a high-quality semiconductor device.

  When the lamp movement driving unit 5b that adjusts the relative distance between the lamp 5a and the application surface of the wafer W is used as the adjusting means, the illuminance light quantity can be adjusted with a simple configuration, and the adjustment is further performed. Can be controlled easily and accurately.

  Further, the drying unit 7 is configured by laminating and arranging a plurality of stages of the heater plates 101 including the heaters 101a, so that the wafers W corresponding to the number of stages can be dried in parallel while saving space. In addition, the manufacturing time during mass production can be shortened while preventing the apparatus from becoming large.

  Further, the alignment unit 4 having a lower height than the housing unit 2, the irradiation unit 5, the application unit 6, and the drying unit 7 is disposed on the drying unit 7. Therefore, it is possible to save the arrangement space of the alignment unit 4 alone, and as a result, it is possible to realize space saving.

  Further, the pre-alignment unit 4b is configured such that the holding unit 41 holds the wafer W on the lower surface thereof, and the imaging unit 43 images the outer peripheral portion of the wafer W protruding from the outer periphery of the holding unit 41 from above, and the centering unit Since it is arranged on the upper side of 4a, it is not necessary to provide the arrangement space for the centering portion 4a and the pre-alignment portion 4b individually in the horizontal direction, and this also makes it possible to reduce the installation area. In addition, since the transport distance of the wafer W from the centering section 4a to the pre-alignment section 4b can be made extremely short compared to the case of transporting the wafer W in the horizontal direction, the transport time can be shortened and the productivity can be improved. Can do.

  The centering unit 4 a also moves the wafer W on the support table 31, which supports the wafer W, and pushes the wafer W on the support table 31 in the plane direction from the periphery toward the center, thereby moving the hand 3 a positioned relative to the support table 31. Since the plurality of pressing portions 32 that align the center of the wafer W with the center are provided, the end of the wafer W is pressed by each pressing portion 32 against the hand 3a positioned with respect to the support base 31. Since it moves in the plane direction, it is possible to finely adjust the wafer position with respect to the hand 3a. As a result, the center position of the wafer W can be accurately positioned at the center position of the hand 3 a positioned with respect to the support base 31. For this reason, the wafer W can be supplied to the application unit 6 with high accuracy, so that the adhesive can be applied to the wafer W by the application unit 6 with high accuracy. As a result, adhesion formed on the wafer W can be performed. The quality of the agent film can be improved.

  In addition, since each pressing portion 32 is configured to stop the pin provided in each lever portion 32a at a stop position where a slight gap is formed between the outer periphery of the wafer W, the pins of the three pressing portions 32 are provided. The wafer W is not pinched while being simultaneously in contact with the outer periphery of the wafer W. Therefore, at the time of positioning by the pressing portion 32, the pins of the three pressing portions 32 are simultaneously pressed against the outer periphery of the wafer W to prevent the outer periphery of the wafer W from being damaged, and the wafer W is sandwiched and curved. Therefore, the positional deviation of the wafer W caused by the restoration of the curved wafer W when the pressing portion 32 is retracted is avoided. Therefore, even when a thin paper-like wafer W such as a semiconductor wafer is used, accurate positioning can be performed.

  The hand 3a has a plurality of support portions 3a1 for supporting the wafer W in a comb-like shape, and the support base 31 has a plurality of support portions 31a for supporting the wafer W on each support portion 3a1 of the hand 3a. Since it has a comb-like shape to be combined, a plurality of wafers W are provided on each support portion 3a1 of the hand 3a and each support portion 31a of the support stand 31, that is, six places on the hand 3a and on the support stand 31. Since it is supported at seven places, the support interval of the wafer W by the support portions 3a1 and 31a can be minimized. For this reason, since the wafer W is evenly supported at many places on both the support base 31 and the hand 3a, bending due to the weight of the wafer W can be suppressed. As a result, misalignment due to the bending of the wafer W is prevented, and accurate positioning can be performed with a simple configuration.

  Further, since the control unit 8 is provided as an adjustment unit that adjusts the pressing amount of the wafer W by each pressing unit 32, the pressing amount by the plurality of pressing units 32 is adjusted by the control unit 8 and combined with the support base 31. Since the wafer W on the hand 3a is moved in the plane direction by the pressing portions 32 and the center of the wafer W is aligned with the center of the hand 3a positioned with respect to the support base 31, accurate positioning is easily performed. Can do.

  The pre-alignment unit 4 b includes a holding unit 41 that holds the wafer W, a rotation driving unit 42 that rotates the holding unit 41 in a plane along the held surface of the wafer W, and a wafer held by the holding unit 41. Since it includes an imaging unit 43 that captures the outer peripheral portion of W, and an image processing calculation unit that processes the captured image captured by the imaging unit 43 and obtains the inclination (orientation) of the rotation direction of the wafer W. The outer peripheral portion of the wafer W is photographed by the photographing unit 43 without damaging the wafer W, and the image is used for alignment, so that the wafer position can be finely adjusted. Thereby, even when a thin paper-like wafer W such as a semiconductor wafer is used, the accurate positioning can be performed.

  Further, the image processing calculation unit calculates a correction amount for adjusting the orientation of the wafer W with respect to the stage 6a to a predetermined position based on the captured image captured by the imaging unit 43, and the correction amount is used for positioning. Therefore, accurate positioning can be easily performed.

  Moreover, the control part 8 which controls the position alignment part 4 and the memory | storage part which memorize | stores the information regarding the necessity of the position alignment of the wafer W by the position alignment part 4 are provided, and the control part 8 is the information memorize | stored in the memory | storage part. Therefore, it is determined whether or not the wafer W is to be aligned by the alignment unit 4, so that the alignment unit 4 is used for a wafer W that does not require high alignment accuracy, for example, an undiced wafer W. Since alignment of the wafer W is avoided and manufacturing time can be shortened, productivity can be improved.

  The holding unit 41 of the pre-alignment unit 4b receives the upper surface of the wafer W held on the hand 3a by adsorbing the upper surface to the lower surface thereof, and in this state, the outer periphery of the wafer W is disposed on the upper side of the holding unit 41. Since the image pickup unit 43 picks up the image, it is possible to smoothly perform the operation from the transfer of the wafer W to the image pickup, the time required for the pre-alignment can be shortened, and the productivity can be improved. It becomes possible to do.

  Further, since the holding part 41 protrudes only the outer peripheral part (the area where the notch N is formed) of the wafer W from the outer periphery, the protruding part is slightly with respect to the holding area of the wafer W by the holding part. Even if the wafer W is thin, it is possible to prevent the protruding portion (outer peripheral portion) from being bent by its own weight as much as possible. Therefore, it is possible to prevent the position detection accuracy of the notch N from being lowered due to the bending of the outer peripheral portion. Positioning can be performed.

  Further, since the wafer W aligned by the centering unit 4a and the pre-alignment unit 4b is supplied to the stage 6a of the coating unit 6, the wafer W can be supplied to the stage 6a with high accuracy. In the case where the position of the wafer W is detected using the imaging unit 65, the imaging target portion such as a corner to be imaged on the chip on the wafer W can be surely contained within the field of view of the imaging unit 65. Since a detection error due to the target portion being out of the field of view of the imaging unit 65 and the wafer W being supplied is prevented, the position of the wafer W can be detected efficiently, and as a result, productivity is improved. be able to.

  The accommodating portion 2 includes a support plate 2a having a plurality of support portions 2a1 that support the wafer W in a comb shape, and the hand 3a includes a plurality of support portions 3a1 that support the wafer W as support plates 2a. Since each of the support portions 2a1 has a comb-like shape that enters between the support portions 2a1, each support portion 3a1 of the hand 3a is supported by each support portion of the support plate 2a. In combination with 2a1, the wafer W is received from the support plate 2a, or the wafer W is transferred to the support plate 2a. This eliminates the need for a plurality of pins that can be moved up and down as in the prior art, and supports the wafers W at a plurality of positions on the support portions 2a1 of the support plate 2 and the support portions 3a1 of the hand 3a. Since the support is made at seven places on the plate 2 and at six places on the hand 3a, the support interval of the wafer W by the support portions 2a1, 3a1 can be made as small as possible, and deformation of the wafer W at the time of delivery is prevented. Therefore, it is possible to perform reliable delivery. Therefore, a thin paper-like wafer W such as a semiconductor wafer can be stably delivered by the robot hand.

  Further, the support plate 2a includes a plurality of hold pins 11 for restricting movement of the supported wafer W in the plane direction, and the hand 3a includes a plurality of holds for restricting movement of the supported wafer W in the plane direction. A hold pin 21 and a plurality of suction holes 22 for sucking and fixing the supported wafer W to the hand 3a are provided. Thereby, at the time of delivery, the movement of the wafer W in the plane direction is restricted by the hold pins 11 of the support plate 2a and the hold pins 21 of the hand 3a, and the wafer W is sucked and fixed by the suction holes 22 of the hand 3a. Therefore, more reliable delivery can be performed.

  The accommodating portion 2 includes a reinforcing member 12 that reinforces each supporting portion 2a1 of the supporting plate 2a, and the reinforcing member 12 is supported on the lower side so as to support each supporting portion 2a1 of the supporting plate 2a. It is provided so as to intersect the extending direction of the portion 2a1. Thereby, each support portion 2a1 of the support plate 2a is reinforced by one member, and even when the support plate 2a is thinned or each support portion 2a1 of the support plate 2a is thinly elongated, the wafer W can be Since it can be supported without being deformed, reliable delivery can be performed. Note that the thickness of the support plate 2a may be reduced by increasing the number of stages of the support plate 2a and increasing the number of wafers W accommodated without increasing the size of the accommodating portion 2.

  In addition, the drying unit 7 supports the wafer W on which the adhesive is applied, a plurality of heater plates 101 that heat the wafer W in the mounted state, and the heater plates 101 separated from each other to be stacked. And a supporting portion 102 for carrying out the above processing. As a result, after the adhesive is applied by the application head 6c, temporary drying is performed by the drying unit 7. Therefore, the liquid adhesive applied on the wafer W before the wafer W is transported to the curing device in the subsequent process. It is possible to prevent the film thickness from becoming non-uniform due to, for example, flowing and being biased, and to suppress uneven drying of the adhesive. Therefore, even when a liquid adhesive is used, the film thickness of the coating film by the adhesive can be made uniform. As a result, since it is possible to use a liquid adhesive instead of the adhesive sheet, the material cost of the adhesive can be reduced and the material use efficiency can be improved as compared with the case where the adhesive sheet is used. Furthermore, since problems due to peeling or winding of the adhesive sheet can be avoided, a high-quality semiconductor device can be manufactured. Further, the wafers W corresponding to the number of stages can be dried at a time in a space-saving manner, and the manufacturing time at the time of mass production can be shortened while preventing an increase in the size of the apparatus.

  Further, the drying unit 7 includes a switching unit that switches, for each heater plate 101, a contact state in which the wafer W and the heater plate 101 are in contact with each other and a separated state in which the wafer W and the heater plate 101 are separated by a predetermined distance. ing. As a result, the wafer W is heated in either the contact state or the separated state, and the drying conditions can be changed according to the adhesive material, the ambient temperature, and the like. Unevenness of drying of the adhesive for each wafer W due to the difference in the stage is suppressed, and the film thickness of the coating film by the adhesive can be surely made uniform.

  The switching unit includes a plurality of lift pins 101b for moving the wafer W placed on the heater plate 101 up and down, and the drying unit 7 includes a temperature measuring device T that measures the temperature of the heater plate 101. The stop position of each lift pin is changed according to the temperature measured by the temperature measuring device T. Thereby, since the separation distance between the heater plate 101 and the wafer W is adjusted, the amount of heat given from the heater plate 101 to the wafer W can be controlled. In particular, it is possible to adjust the amount of heat given to the wafer W earlier than controlling the temperature of the heater plate 101. This prevents overheating and underheating of the wafer W, so that drying unevenness of the adhesive on the wafer W can be reliably suppressed, and the film thickness of the coating film by the adhesive can be made more surely uniform.

  Further, by providing the irradiation unit 5 for irradiating the application surface of the wafer W with ultraviolet rays and the application unit 6 for applying an adhesive to the application surface irradiated with ultraviolet rays, the application surface of the wafer W is modified, and the wafer is applied. Since the adhesive adheres stably to the coated surface of W, the degree of adhesion between the coated surface of the wafer W and the adhesive can be improved. As a result, since it becomes possible to use a liquid adhesive, it is possible to realize a reduction in the material cost of the adhesive and an improvement in material use efficiency as compared with the case where an adhesive sheet is used. Furthermore, the adhesive sheet becomes unnecessary, and in addition, when the dicing tape is peeled off due to the improved adhesion, the adhesive coating film is prevented from being peeled off or rolled up together with the dicing tape. The reliability of the bonding performance between the separated chip and the circuit board to be bonded or another chip is improved, and a high-quality semiconductor device can be manufactured.

  Further, a hand 3 a that supports the wafer W is provided, and a transport unit 3 that transports the wafer W by the hand 3 a is provided. The irradiation unit 5 irradiates the application surface of the wafer W that is moved by the transport unit 3 with ultraviolet rays. Therefore, the integrated light quantity for surface modification can be adjusted by the operation of the hand 3a. For example, the hand 3 a moves the wafer W back and forth below the lamp 5 a of the irradiation unit 5. As a result, the wafer W passes under the lamp 5a a total of two times, and since the two passes ensure a predetermined integrated light quantity per unit area for surface modification, the wafer W The coated surface can be reliably modified, and the adhesive can be stably adhered to the coated surface of the wafer W. Thus, it becomes possible to improve the coating quality of the wafer W, and as a result, a high-quality semiconductor device can be manufactured.

  The irradiation unit 5 also includes a lamp 5a that generates ultraviolet rays, a sensor 5c that detects the amount of ultraviolet rays generated by the lamp 5a, and a wafer W based on the amount of ultraviolet rays detected by the sensor 5c. Adjustment means (for example, the lamp movement drive unit 5b) for adjusting the irradiation light amount with respect to the coating surface to a set value, the irradiation light amount of the UV light irradiated to the wafer W by the irradiation unit 5 is Since the set value is maintained and the amount of irradiation light is prevented from fluctuating, the surface modification of the back surface (application surface) of the wafer W can be performed reliably and stably. Therefore, it is possible to improve the coating quality of the wafer W, and as a result, it is possible to reliably manufacture a high-quality semiconductor device.

  When the lamp movement driving unit 5b that adjusts the relative distance between the lamp 5a and the application surface of the wafer W is used as the adjusting means, the illuminance light quantity can be adjusted with a simple configuration, and the adjustment is further performed. Can be controlled easily and accurately.

  Also, the wafer W is placed, the stage 6a that heats the placed wafer W, and the adhesive is discharged as a plurality of droplets toward the application region of the placed wafer W heated by the stage 6a. By providing the coating head 6c, the droplets landed on the wafer W are sequentially dried by the heat supplied from the stage 6a, so that uniform drying of the droplets is realized. Therefore, even when a liquid adhesive is used, the flow of the adhesive is prevented so that the adhesive before drying flows on the wafer W during transportation to a drying apparatus or the like, and a coating film with the adhesive is desired. The film can be formed uniformly with a film thickness. As a result, since it is possible to use a liquid adhesive instead of the adhesive sheet, the material cost of the adhesive can be reduced and the material use efficiency can be improved as compared with the case where the adhesive sheet is used. Furthermore, problems due to peeling or winding up when an adhesive sheet is used can be avoided, so that a high-quality semiconductor device can be manufactured. In addition, as heating temperature, the temperature which suppresses the flow of an adhesive agent, for example, the temperature which accelerates | stimulates the vaporization of the solvent contained in an adhesive agent is used.

  The stage 6 a is a heating stage 51 having a plurality of suction holes 51 e for sucking the wafer W in the mounted state, and the wafer W in the mounted state is brought into close contact with the heating stage 51 by suction by the suction holes 51 e. Therefore, the adhesive droplet that has landed on the wafer W rapidly increases in viscosity after landing and its flow is reliably suppressed. This prevents a plurality of droplets of the adhesive adhered and integrated on the wafer W from spreading out, so that the thickness of the coating film by the adhesive is formed to a desired thickness, and Uniform film thickness can be more reliably realized.

  In addition, a coating head 6c that discharges the adhesive as a plurality of droplets toward the wafer W, a stage 6a on which the wafer W is mounted and movable below the coating head 6c, and ejection of the coating head 6c are stabilized. The discharge stabilizing unit 6e is provided, and the discharge stabilizing unit 6e cleans and wets the discharge surface of the coating head 6c and the discharge confirmation unit 81 that checks the discharge by imaging the droplets discharged from the coating head 6c. A cleaning / wetting unit 82 for setting the state and a discharge amount confirmation unit 83 for confirming the total discharge amount of the coating head 6c are provided. The discharge confirmation unit 81 confirms the state of the coating head 6c, and if there is a problem with the state, maintenance is performed, so that it is possible to suppress the occurrence of discharge abnormality. In addition, the cleaning and wetting unit 82 prevents the adhesive attached to the ejection surface of the coating head 6c from drying and becoming a solidified product, so that it is possible to suppress the occurrence of ejection abnormalities such as ejection bending. Become. Furthermore, since the discharge confirmation unit 83 confirms the discharge amount of the droplets and maintenance is performed when there is a problem with the discharge amount, it is possible to suppress the occurrence of a discharge amount abnormality. From these things, the stable application | coating of a liquid adhesive agent is realizable. As a result, since it is possible to use a liquid adhesive instead of the adhesive sheet, the material cost of the adhesive can be reduced and the material use efficiency can be improved as compared with the case where the adhesive sheet is used. Further, when applying the adhesive on the wafer W, since the ejection failure in which the adhesive is not discharged from the nozzle of the coating head 6 is prevented, droplets of the adhesive are applied to the position on the wafer W where the adhesive should be applied. Since it can be reliably applied, a high-quality semiconductor device can be manufactured.

  In addition, the ejection confirmation unit 81 includes an imaging unit 81a provided so as to be able to image the droplets ejected from the coating head 6c, and an elevating drive unit that moves the imaging unit 81a up and down to a retracted position and an imaging position (working position). 81b, an imaging illumination unit 81c, a receiving unit 81d that receives droplets ejected from the coating head 6c, and an elevating drive unit 81e that raises and lowers the illumination unit 81c and the receiving unit 81d to the retracted position and the working position. The cleaning and humidifying unit 82 includes a box-shaped container 82a having an upper opening, a wipe member 82b provided in the container 82a, a nozzle 82c for spraying a solvent on the wipe member 82b, and a container 82a. And a movement drive unit 82d that moves in the direction along the discharge surface. The discharge amount confirmation unit 83 includes a box-shaped housing 83a having a shutter S that can be opened and closed, Electronic balance 83b, a weighing container 83c provided on the electronic balance 83b, an opening / closing drive part 83d for opening and closing the shutter S, and a movement drive part 83e for moving the housing 83a in the direction along the discharge surface Have. Accordingly, it is possible to easily switch between the application operation and the stable discharge operation by the movement of each part. Further, since the ejected droplets and the sprayed solvent are also collected, it becomes possible to prevent the contamination of the apparatus. Further, since the discharge amount is also measured in the housing 83a where there is no air flow or the like, it is possible to perform accurate measurement with high accuracy. These are factors for reliable maintenance, and stable application of the liquid adhesive can be more reliably realized.

  In addition, the ejection confirmation unit 81 moves up and down the image pickup unit 81a to the retracted position and the image pickup position (working position), and moves up and down to raise and lower the illumination unit 81c and the receiving unit 81d to the retracted position and work position. 81e, and the imaging unit 81a is retracted to the retracted position set above the moving region of the stage 6a by the lifting / lowering driving unit 81b, and the illumination unit 81c and the receiving unit 81d are moved from the moving region of the stage 6a. Also, the lifting / lowering drive unit 81e retracts to the retracted position set on the lower side. By retracting the imaging unit 81a to the upper side of the moving area of the stage 6a, dust drops generated by the movement of the stage 6a and the like, or drops of adhesive agent are ejected from the nozzles of the coating head 6c and fall. It is possible to prevent mist and the like from adhering to the lens or the like of the imaging unit 81a, and to improve the reliability of ejection confirmation. Further, by retracting the receiving portion 81d to the lower side of the moving area of the stage 6a, even if the adhesive received by the receiving portion 81d spills and falls from the receiving portion 81d, it is placed on the wafer W being moved by the stage 6a. It can be prevented from falling and the quality of the adhesive film formed on the coated surface of the wafer W can be improved. In this manner, by retreating the imaging unit 81a and the receiving unit 81d to different retreat positions, the reliability of the discharge confirmation is improved, and the quality of the adhesive film formed on the application surface of the wafer W is improved. It becomes possible to plan.

  The cleaning and humidifying unit 82 has a movement drive unit 82d that moves the wipe member 82b up and down and moves in the X-axis direction together with the container 82a to the retracted position and the working position. The wipe member 82b is moved from the moving region of the stage 6a. Also, the lifting / lowering drive unit 81e retracts to the retracted position set on the lower side. Even if the adhesive adhered to the wipe member 82b is dropped by wiping the discharge surface of the coating head 6c by retracting the wipe member 82b below the moving region of the stage 6a, the wipe member 82b and the wafer W are removed. Since the stage 6a is interposed between them, it is possible to reliably prevent the adhesive dropped from the wipe member 82b from adhering to the wafer W, and an adhesive that is not discharged from the nozzle of the coating head 6c can be obtained. It is possible to prevent formation failure or quality deterioration of the adhesive layer on the wafer W due to adhesion.

  Further, the discharge amount confirmation unit 83 has a movement drive unit 83e that moves the weighing electronic balance 83b to the retracted position and the working position by moving in the Y-axis direction, and moves the electronic balance 83b in the moving region of the stage 6a. The movement drive unit 83e is used to retreat to the side retreat position. Since the electronic balance 83b is horizontally moved in the Y-axis direction and retracted, the movement direction between the plurality of coating heads 6c and the movement direction to the retreat position can be matched when the discharge amount is confirmed. It is not necessary to load a special moving mechanism for retracting the balance, and the apparatus configuration can be simplified. Further, since the movement between the retracted position and the working position is only in the Y-axis direction along the horizontal direction, the movement prevents the electronic balance from being tilted with respect to the horizontal, and the electronic balance is tilted with respect to the horizontal. A reduction in measurement accuracy can be prevented as much as possible, and the discharge amount can be confirmed with high accuracy.

  Further, the retracted position of the receiving part 81d of the discharge confirmation part 81 and the wipe member 82b of the cleaning and wet part 82 are arranged in parallel with the X axis direction as the moving direction of the stage 6a below the moving area of the stage 6a. Set. Specifically, the retracted position of the receiving portion 81d was set immediately below the coating head 6c, and the retracted position of the wipe member 82b was set to a position adjacent to the retracted position of the portion 81d on the transport unit 3 side. Therefore, the difference in the height direction between the receiving portion 81d positioned at the retracted position and the wipe member 82b can be eliminated as much as possible. Therefore, the retracting space of the receiving portion 81d and the wipe member 82b below the moving region of the stage 6a. Can be made as small as possible. As a result, it is possible to reduce the size of the apparatus 1 and to prevent the moving height of the stage 6a from being increased. Therefore, it is possible to reduce the overall conveyance height of the wafer W in the apparatus 1, The operator's hand is easy to reach each part 2-7, and the maintainability of the whole apparatus improves.

  Further, the retracting direction of the image pickup unit 81a, the illuminating unit 81c and the receiving unit 81d of the discharge confirmation unit 81, and the wipe member 82b of the cleaning wet unit 82 having a length substantially equal to the arrangement length in the Y-axis direction of the plurality of coating heads 6c. The retraction direction of the electronic balance 83b of the discharge amount confirmation unit 83 in which the length in the Y-axis direction is smaller than the arrangement length in the Y-axis direction of the plurality of coating heads 6c is defined as the Y-axis direction. Further, the retraction direction of the imaging unit 81a of the ejection confirmation unit 81 and the retraction direction of the illumination unit 81c and the receiving unit 81d are divided into an upward direction and a downward direction. Furthermore, the retreat direction of the illumination part 81c and the receiving part 81d of the discharge confirmation part 81 and the retreat direction of the wipe member 82b of the cleaning wet part 82 are set in parallel in the X-axis direction at the retreat position. With this configuration, since only the electronic balance 83b having a relatively small length in the Y-axis direction in the horizontal direction can be used, the retreat space in the horizontal direction can be minimized, and the retreat is performed in the downward direction. Since the illumination part 81c and the receiving part 81d and the wipe member 82b are arranged in parallel at the retracted position, the retracted space in the vertical direction can be made as small as possible. As a result, the space secured in the apparatus as a retreat space can be reduced as much as possible, and the apparatus can be downsized.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention. For example, some components may be deleted from all the components shown in the above-described embodiment. Furthermore, you may combine the component covering different embodiment suitably. Moreover, in the above-mentioned embodiment, although various numerical values are mentioned, those numerical values are illustrations and are not limited.

  For example, in the above-described embodiment, the drying unit 7 has been described as supporting the wafer W on the heater plate 101 and drying the adhesive applied to the wafer W by heating. However, the present invention is not limited to this. In place of the heater plate 101, a support plate for the wafer W is provided, and the adhesive is heated and dried by supplying warm air, or the ambient temperature around the wafer W is heated and dried by a heating means such as a heater, or The atmosphere around the wafer W may be reduced in pressure and dried under reduced pressure.

  In the above-described embodiment, the application unit 6 has been described as applying the adhesive while relatively moving the application head 6c and the wafer W in the X-axis direction. However, the present invention is not limited to this. The adhesive may be applied while rotating the wafer W in a horizontal plane under the plurality of application heads 6c arranged in a line.

  In this case, the adhesive is applied to the wafer W on the stage 6a by the ink jet type application head 6c while rotating the stage 6a on which the wafer W is placed. The configuration of the coating unit 6 is basically the same as that of the above-described embodiment, but the coating head 6c does not have to be arranged in a range that covers the length of the diameter of the wafer W (in the above-described embodiment, The number of the coating heads 6c is seven), and it may be arranged in a range that covers the length from the center to the outer periphery of the wafer W placed on the stage 6a. However, as in the above-described embodiment, the wafer W may be arranged in a range that covers the diameter portion.

  Here, as in the case of the above-described embodiment, as a coating operation when the coating head 6c is arranged in a range covering the diameter portion of the wafer W, the wafer W is mounted on the stage 6a located at the standby position by the hand 3a. The stage 6a is driven to drive the stage 6a in the X-axis direction so that the center of the wafer W is located directly below the central coating head 6c among the seven coating heads 6c arranged. Move to. At this position, the adhesive is applied to the application surface of the wafer W by discharging the adhesive from the nozzles of the application heads 6c while rotating the stage 6a in one direction at a predetermined speed by the rotation drive unit 52. When the application of the adhesive to the application surface of the wafer W is completed, the rotation of the stage 6a is stopped at 0 ° (orientation when the wafer W is supplied), and the stage 6a is put on standby by driving the stage conveyance driving unit 6b. Move to position. The application of the adhesive while rotating the wafer W is preferably applied in the case of performing a solid application in which the adhesive is uniformly applied to the entire application surface of the wafer W.

  In this spin coating, the relative movement speed between the coating surface of the wafer W and the coating head 6c increases as the distance from the rotation center increases, so that the nozzles of the seven coating heads 6c are bonded with the same discharge amount and the same discharge cycle. When the agent is discharged, the distribution of the adhesive droplets applied to the application surface becomes sparser as the distance from the rotation center increases. Therefore, the amount of adhesive discharged per unit time is increased as the distance from the center of rotation increases, and control is performed so that the distribution of adhesive droplets on the coated surface is uniform. For example, the discharge amount is controlled so that the amount of the adhesive that is discharged increases as the distance from the rotation center increases, or the discharge cycle is shortened.

  In particular, when the coating head 6c is arranged in a range that covers the diameter of the wafer W, the inner area on the rotation center side and the outer side on the outer circumference side with the coating surface of the wafer W as a boundary from the rotation center. The area is divided into two areas, and the application of the adhesive to the inner area is performed using half of the nozzles located on the right side of the rotation center among the nozzles facing the inner area, In other words, if all the nozzles positioned opposite the outer region are used, a larger amount of adhesive is applied to the outer region where the relative movement speed between the coating surface and the coating head is faster than that of the inner region. Can do.

  Moreover, it is not limited to two regions, and may be divided into three or more regions in the radial direction. In this case, for the nozzle located on the right side with respect to the rotation center, the adhesive is discharged from all the nozzles, and for the nozzle located on the left side, within a group of nozzles facing a region far from the rotation center. Control is performed so that the number of nozzles for discharging the adhesive is increased. For example, when divided into three regions, control is performed so that the adhesive is not discharged from a group of nozzles facing the inner region among the nozzles located on the left side with respect to the rotation center. The group of nozzles facing each other is controlled so that the adhesive is discharged from every other nozzle, and the group of nozzles facing the outer region is controlled so that the adhesive is discharged from all nozzles. Condition.

  Alternatively, the coating head 6c may be provided so as to be horizontally rotatable with respect to the holding member 64a, and the coating head 6c may be rotated horizontally according to the distance from the rotation center. That is, the coating head 6c is arranged near the rotation center so that the nozzle arrangement direction is along the Y-axis direction, and the nozzle arrangement direction intersects with the Y-axis direction at a larger angle as the distance from the rotation center increases. The coating head 6c is horizontally rotated and arranged. By doing in this way, the arrangement interval of the nozzles in the Y-axis direction becomes shorter as the distance from the rotation center becomes longer, so the arrangement interval in the radial direction of the adhesive droplet becomes denser toward the outer periphery, and each nozzle Even if the discharge amount per unit time of the adhesive is the same, it is possible to prevent the distribution of adhesive droplets on the application surface from becoming sparse on the outer peripheral side.

  Moreover, it is also possible to apply the adhesive by the application unit 6 described in step 6 of the above-described embodiment as follows. That is, when the wafer W is a diced wafer W or the like, and the adhesive film is formed in a pattern similar to the shape (for example, rectangular shape) for each chip on the wafer W, Application is performed in two steps.

  First, in the first step, the adhesive is applied in one or a plurality of rows along the outer peripheral edge of the rectangular application region. That is, coating is performed at intervals such that adjacent droplets of the adhesive overlap each other along the outer periphery of the coating region, thereby forming a frame made of the adhesive. This adhesive frame may be formed by one row of droplets or may be formed by two or more rows. At this time, the temperature of the heating stage 51 in the stage 6a is set to a high temperature at which drying of the adhesive droplet landed on the wafer W starts immediately in the entire droplet and suppresses the wetting and spreading of the droplet here. In this way, an adhesive frame, that is, a frame-shaped adhesive layer in which the height close to the application height of the droplets of the adhesive at the time of landing can be formed along the outer periphery of the application region.

  In the first step, when forming the frame-like adhesive layer, the adhesive droplet application operation is repeatedly performed on the outer peripheral edge of the application region, and the application is already applied and drying is started. It is preferable that the adhesive droplets are further stacked on the adhesive droplets a plurality of times so as to obtain a necessary height (thickness) for the adhesive layer formed in the application region.

  In addition, the adhesive droplets were applied so that they partially overlap each other. First, the adhesive droplets are applied so that they are separated from each other by a predetermined distance, and then the gaps between the droplets are filled by subsequent application. You may do it.

  Next, in the second step, adhesive droplets are sequentially applied to the inner region of the frame-shaped adhesive layer formed in the first step. At this time, the temperature of the heating stage 51 in the stage 6a is set to a temperature lower than that in the first step so that the adhesive droplet landed on the wafer W has higher wettability than in the first step. To do. This makes it easier for the adhesive droplets applied this time to become compatible with the frame-shaped adhesive layer formed in the first step, and the adhesive layer integrated with the frame-shaped adhesive layer Can be formed.

  In this case, since the outer shape of the adhesive layer formed by the frame-shaped adhesive layer is defined, the adhesive layer can be prevented from protruding from the application region on the chip. Therefore, even when an adhesive is applied to the diced wafer W or the like, the adhesive is prevented from being applied to the dicing groove and the adjacent chips are bonded by the protruding adhesive. Since defects can be prevented and generation of defective products resulting therefrom can be prevented, productivity can be improved, which is preferable.

  Even when the adhesive is applied to the entire surface of the wafer W, a frame-like adhesive layer is formed along the outer periphery of the application region on the wafer W in the first step, as described above. You may make it apply | coat an adhesive agent to the area | region inside a frame-shaped adhesive bond layer at the 2nd process.

  Further, a control unit 8 is provided for controlling the heating temperature of the wafer W by the stage 6a and the discharge of the adhesive by the coating head 6c. The control unit 8 controls the heating temperature of the wafer W by the stage 6a on the wafer W by the coating head 6c. You may make it switch according to the application position of the adhesive agent with respect to an application | coating area | region. Thereby, even when the heating temperature of the wafer W by the stage 6a varies depending on the location in the surface of the stage 6a, it is possible to suppress drying unevenness due to the temperature unevenness. Thereby, since the droplets are uniformly dried, it is possible to more reliably realize the uniform thickness of the coating film by the adhesive.

  In particular, the control unit 8 discharges the adhesive by the coating head 6c so that the application of the adhesive to the application region on the wafer W is divided into the application to the outer peripheral edge and the application to the inner region of the outer peripheral edge. When the adhesive is applied to the outer peripheral edge, the heating temperature of the wafer W by the stage 6a may be controlled to be higher than when the adhesive is applied to the region inside the outer peripheral edge. . As a result, it is possible to form an adhesive frame, that is, a frame-shaped adhesive layer that has a height close to the application height of the adhesive droplet at the time of landing, along the outer periphery of the application region. Therefore, drying of the adhesive droplet landed on the wafer W starts immediately in the entire droplet, and wetting and spreading of the droplet here can be suppressed. As a result, the desired film thickness and uniformity of the coating film by the adhesive can be more reliably realized.

DESCRIPTION OF SYMBOLS 1 Semiconductor device manufacturing apparatus 3 Conveying part 3a Hand 3a1 Supporting part 4 Positioning part 4a Centering part 4b Prealignment part 6a Stage 31 Supporting base 31a Supporting part 32 Pressing part 41 Holding part 42 Rotation driving part 43 Imaging part W Wafer (Coating Object)

Claims (10)

A hand that supports a coating object, and a transport unit that transports the coating object by the hand;
An alignment unit for aligning the application object and the hand;
An application unit that has a stage on which the application object is placed, and that applies an adhesive to the application object placed on the stage by the hand;
With
The alignment unit is configured to align the application target supported by the hand and conveyed to the stage with respect to the hand, and centering the center of the application target to the center of the hand Have
The centering part is
A support base for supporting the application object;
A plurality of pressing parts that push and move the application object on the support base and align the center of the application object with the center of the hand positioned with respect to the support base;
An apparatus for manufacturing a semiconductor device, comprising: The hand has a plurality of support portions that support the application object in a comb shape,
2. The semiconductor device manufacturing apparatus according to claim 1, wherein the support base has a plurality of support portions for supporting the application object in a comb-teeth shape combined with the plurality of support portions of the hand. .   The apparatus for manufacturing a semiconductor device according to claim 1, further comprising an adjusting unit that adjusts an amount of pressing of the application target by the plurality of pressing units. The alignment unit further includes a pre-alignment unit for adjusting a tilt in a rotation direction of the application target with respect to the stage to a predetermined tilt,
The pre-alignment unit is
A holding unit for holding the application object;
A rotation drive unit that rotates the holding unit in a plane along the held surface of the application target;
An imaging unit for imaging an outer peripheral portion of the application object held by the holding unit;
An image processing calculation unit that processes a captured image captured by the imaging unit and obtains an inclination in a rotation direction of the application target;
The apparatus for manufacturing a semiconductor device according to claim 1, further comprising: A hand that supports a coating object, and a transport unit that transports the coating object by the hand;
An alignment unit for aligning the application object and the hand;
An application unit that has a stage on which the application object is placed, and that applies an adhesive to the application object placed on the stage by the hand;
With
The alignment unit aligns the application target supported by the hand and conveyed to the stage with respect to the hand, and has a predetermined inclination in the rotation direction of the application target with respect to the stage. It has a pre-alignment part for adjusting to the inclination of
The pre-alignment unit is
A holding unit for holding the application object;
A rotation drive unit that rotates the holding unit in a plane along the held surface of the application target;
An imaging unit for imaging an outer peripheral portion of the application object held by the holding unit;
An image processing calculation unit that processes a captured image captured by the imaging unit and obtains an inclination in a rotation direction of the application target;
An apparatus for manufacturing a semiconductor device, comprising:   The image processing calculation unit calculates a correction amount for adjusting an inclination in a rotation direction of the application target with respect to the stage to the predetermined position based on the captured image captured by the imaging unit. An apparatus for manufacturing a semiconductor device according to claim 4 or 5. A control unit for controlling the alignment unit;
A storage unit that stores information on the necessity of alignment of the application object by the alignment unit;
With
7. The control unit according to claim 4, wherein the control unit determines whether or not to perform alignment of the application target by the alignment unit based on the information stored in the storage unit. A semiconductor device manufacturing apparatus according to claim 1. A step of conveying the application object to an alignment unit that aligns the application object and the hand using a conveyance unit that conveys the application object by a hand that supports the application object;
A step of performing alignment between the application object and the hand by the alignment unit;
Placing the application object that has been aligned with the hand by the alignment unit on a stage of the application unit;
Applying an adhesive to the application object placed on the stage by the hand; and
Have
In the step of aligning, the application object is placed by the hand on a support table that supports the application object, and the application object on the support table is pushed and moved by a plurality of pressing portions, A manufacturing method of a semiconductor device, wherein the center of the application object is aligned with the center of the hand positioned with respect to the support base.   In the alignment step, a plurality of support portions that the support base has in a comb-tooth shape are combined with a plurality of support portions that the hand has a comb-tooth shape, and the application target is placed on the support base. The method of manufacturing a semiconductor device according to claim 8. A step of conveying the application object to an alignment unit that aligns the application object and the hand using a conveyance unit that conveys the application object by a hand that supports the application object;
A step of performing alignment between the application object and the hand by the alignment unit;
Placing the application object that has been aligned with the hand by the alignment unit on a stage of the application unit;
Applying an adhesive to the application object placed on the stage by the hand; and
Have
In the alignment step, the application object held by the rotating holding unit is made to hold the application object in a holding unit holding the application object, rotate the holding unit by a rotation driving unit, and rotate the holding unit. And a correction amount for adjusting the orientation of the coating object with respect to the stage to a predetermined position is calculated based on a captured image captured by the imaging unit. Device manufacturing method.

Images