TW201428891A - Gray level detection method for wafer non-breakage - Google Patents
Gray level detection method for wafer non-breakage Download PDFInfo
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Abstract
Description
本發明係有關於劈裂晶圓的方法,尤其是有關於檢測晶圓劈裂後是否斷開的方法。
The present invention relates to a method of splitting a wafer, and more particularly to a method of detecting whether a wafer is broken after splitting.
請參閱「圖1」與「圖2」所示,晶圓劈裂機1用於將晶圓2劈裂為一粒粒的晶粒,以進行後續的封裝作業,晶圓2在進行劈裂之前,會先用雷射切割出橫向與縱向的預切線3,接著將晶圓2貼附一藍膜4加以固定後,藉一固定夾具5送入一晶圓劈裂機1進行劈裂作業。
晶圓劈裂機1包含一晶圓固定座6、一懸臂桿7、一劈刀8、一影像擷取元件9、一壓制元件10與一照明光源11,該晶圓固定座6夾置該固定夾具5,並可作平面方向的移動與轉動,該劈刀8固定於該懸臂桿7上且設於該晶圓2的上方,以進行劈裂作業,且在進行劈裂作業時,為利用該壓制元件10抵壓該晶圓2,以避免晶圓2翹曲,而該照明光源11則可一體連接設置於該壓制元件10上,其用於產生成像光源(圖未示)照射該晶圓2,以穿透晶圓2,而該影像擷取元件9則設於該晶圓2的下方,為用於擷取該晶圓2的影像,以得知該晶圓2的位置。
據而該晶圓2可藉該晶圓固定座6的位移與該影像擷取元件9對該晶圓2的取像而進行定位,而在定位完成之後,即可藉該劈刀8的上下位移與該晶圓固定座6的定量位移,對多個預切線3連續進行劈裂,而該影像擷取元件9則在連續劈裂過程中,持續監控該預切線3的定位是否偏移,以視偏移的程度補償定位,而當橫向與縱向的預切線3皆被劈裂之後即完成劈裂作業。
又當製程偏差,導致晶圓2有未斷現象時,習知需要重新對位尋找未斷的位置加以手動重劈,其不但費時且對位不準時容易造成晶圓2的崩壞,造成良率的下降。因此,目前作法為在劈裂後即檢知晶圓2是否斷開,若未斷開則加深刀位,直接重劈直至晶圓2斷開為止。
而檢知晶圓2於劈裂之後是否斷開,習知台灣公告第I351069號專利,已揭露一種晶圓裂片之光學檢知方法,其方法為擷取劈裂前後的晶圓影像,並利用電腦分析晶圓裂片前後影像中之切割道寬度尺寸差異,進而判斷該晶圓衝擊裂片是否正確,亦即判斷晶圓是否確實斷開。
然而,此習用方法,要計算寬度尺寸的變化,首先要得知劈裂前後切割道寬度,但是因晶圓製程特性不同,切割道寬度變化量不一或無變化,誤判率偏高,且為了讓影像判斷寬度,劈刀必須維持下位以維持寬度變化量,速度較慢,因此習知的光學檢知方法,不但誤判率偏高,且速度慢,無法滿足使用上的需求。
Referring to FIG. 1 and FIG. 2, the wafer splitting machine 1 is used to split the wafer 2 into a grain of grains for subsequent packaging operations, and the wafer 2 is undergoing splitting. Previously, the transverse and longitudinal pre-cut lines 3 are first cut by laser, and then the wafer 2 is attached with a blue film 4 and fixed, and then sent to a wafer splitting machine 1 by a fixing jig 5 for cleaving operation. .
The wafer splitting machine 1 comprises a wafer holder 6, a cantilever rod 7, a file 8, an image capturing member 9, a pressing member 10 and an illumination source 11, the wafer holder 6 sandwiching the wafer holder 6 Fixing the clamp 5 and moving and rotating in a plane direction, the boring tool 8 is fixed on the cantilever rod 7 and disposed above the wafer 2 for performing a splitting operation, and when performing a splitting operation, The pressing member 10 is pressed against the wafer 2 to prevent the wafer 2 from being warped, and the illumination source 11 is integrally connected to the pressing member 10 for generating an imaging light source (not shown) to illuminate the wafer 2 The wafer 2 is penetrated by the wafer 2, and the image capturing element 9 is disposed under the wafer 2, and is used for capturing the image of the wafer 2 to know the position of the wafer 2.
Therefore, the wafer 2 can be positioned by the displacement of the wafer holder 6 and the image capturing component 9 to take image of the wafer 2, and after the positioning is completed, the upper and lower sides of the file 8 can be borrowed. The displacement and the quantitative displacement of the wafer holder 6 continuously chop the plurality of pre-cut lines 3, and the image capturing element 9 continuously monitors whether the positioning of the pre-cut line 3 is offset during the continuous cleaving process. The positioning is compensated by the degree of visual offset, and the splitting operation is completed when both the lateral and longitudinal pre-cut lines 3 are cleaved.
When the process deviation causes the wafer 2 to be unbroken, it is customary to re-align the position to find the unbroken position and manually re-twist, which is not only time-consuming but also causes the wafer 2 to collapse when the alignment is not accurate. The rate of decline. Therefore, the current practice is to detect whether the wafer 2 is broken after the splitting, and if it is not disconnected, the tool position is deepened and the wafer is directly re-cut until the wafer 2 is disconnected.
It is known that the wafer 2 is broken after the splitting. The patent publication No. I351069 of the Japanese Patent Publication No. I351069 discloses a method for optically detecting a wafer split by using a wafer image before and after splitting and utilizing The computer analyzes the difference in the width of the scribe line in the image before and after the wafer cleavage, and then determines whether the wafer impact lobes are correct, that is, whether the wafer is actually disconnected.
However, in this conventional method, to calculate the change in the width dimension, it is first necessary to know the width of the scribe line before and after the splitting, but due to the different process characteristics of the wafer, the variation of the width of the scribe line varies or does not change, and the false positive rate is high, and Let the image judge the width, the file must maintain the lower position to maintain the width change, and the speed is slow. Therefore, the conventional optical detection method not only has a high false positive rate, but also has a slow speed and cannot meet the demand for use.
爰此,本發明之主要目的在於提供一種晶圓未斷灰階偵測方法,其透過光學影像平均灰階值的變化,快速判斷晶圓是否斷開。
本發明為一種晶圓未斷灰階偵測方法,用於判斷一晶圓進行劈裂後,該晶圓是否斷開,其包含步驟S1:取得劈裂前晶圓影像、步驟S2:試劈裂取得灰階變化臨界值、步驟S3:進行自動生產並開啟光源、步驟S4:劈裂晶圓、步驟S5:取得劈裂後晶圓影像與步驟S6:判斷晶圓是否斷開。
其中步驟S1:取得劈裂前晶圓影像,為透過一影像擷取器擷取該晶圓劈裂前的晶圓影像;步驟S2:試劈裂取得灰階變化臨界值,為透過手動試劈的方式,找出灰階變化臨界值;步驟S3:進行自動生產並開啟光源,為開啟自動化作業,並透過一光源照射該晶圓;步驟S4:劈裂晶圓,為對該晶圓進行劈裂動作;步驟S5:取得劈裂後晶圓影像,為透過該影像擷取器擷取該晶圓劈裂後的晶圓影像;步驟S6:判斷晶圓是否斷開,為透過一影像處理單元依據該晶圓劈裂前的晶圓影像與該晶圓劈裂後的晶圓影像的平均灰階值是否變化,來判定該晶圓是否斷開。
據此,本發明藉由光具有快速反應的特性,透過取得該晶圓劈裂前的晶圓影像與該晶圓劈裂後的晶圓影像的平均灰階值,觀察其是否改變,而推定該晶圓是否斷開,其反應快速且準確度高,對於影像處理的運算負擔亦不大,可以快速的作出判定結果,以滿足使用上的需要。
Accordingly, the main object of the present invention is to provide a method for detecting an unbroken gray level of a wafer, which can quickly determine whether a wafer is broken by a change in an average gray scale value of an optical image.
The present invention is a method for detecting an unbroken gray level of a wafer for determining whether a wafer is broken after a wafer is cleaved, and the method includes the step S1: obtaining a wafer image before the splitting, and step S2: testing The crack obtains the gray scale change critical value, step S3: performs automatic production and turns on the light source, step S4: splits the wafer, step S5: obtains the split wafer image and step S6: determines whether the wafer is disconnected.
Step S1: obtaining the image of the wafer before the splitting, and capturing the image of the wafer before the splitting of the wafer through an image picker; Step S2: obtaining a critical value of the gray scale change by trial splitting, by manually testing The method of finding the gray scale change threshold value; step S3: performing automatic production and turning on the light source, in order to start the automatic operation, and irradiating the wafer through a light source; step S4: splitting the wafer to smash the wafer Step S5: obtaining the image of the wafer after the splitting, and capturing the image of the wafer after the splitting of the wafer through the image picker; Step S6: determining whether the wafer is disconnected, by transmitting an image processing unit Whether or not the wafer is disconnected is determined according to whether the wafer image before the wafer split and the average gray scale value of the wafer image after the wafer splitting are changed.
Accordingly, the present invention predicts whether or not the wafer image before the splitting of the wafer and the average gray scale value of the wafer image after the wafer is split by obtaining the characteristic of rapid response of the light, and estimating Whether the wafer is disconnected, the reaction is fast and accurate, and the computational burden on image processing is not large, and the determination result can be quickly made to meet the needs of use.
1...晶圓劈裂機1. . . Wafer splitting machine
2...晶圓2. . . Wafer
3...預切線3. . . Pre-cut line
4...藍膜4. . . Blue film
5...固定夾具5. . . Fixing fixture
6...晶圓固定座6. . . Wafer mount
7...懸臂桿7. . . Cantilever rod
8...劈刀8. . . chopper
9...影像擷取元件9. . . Image capture component
10...壓制元件10. . . Pressing element
11...照明光源11. . . Illumination source
S1...取得劈裂前晶圓影像S1. . . Obtaining a pre-crack wafer image
S1-1...建立比對區域S1-1. . . Establish comparison area
S2...試劈裂取得灰階變化臨界值S2. . . Triggering to obtain the critical value of gray scale change
S3...進行目動生產並開啟光源S3. . . Perform eye production and turn on the light source
S4...劈裂晶圓S4. . . Splitting wafer
S5...取得劈裂後晶圓影像S5. . . Obtaining a wafer image after splitting
S6...判斷晶圓是否斷開S6. . . Determine if the wafer is disconnected
S7...加深刀位S7. . . Deepen the knife position
S8...完成劈裂流程S8. . . Complete the splitting process
20...晶圓20. . . Wafer
30...擷取區域30. . . Capture area
31...比對區域31. . . Alignment area
圖1,係習知晶圓之結構圖。
圖2,係習知晶圓劈裂機結構圖。
圖3,係本發明判斷方法步驟圖。
圖4,係本發明晶圓未斷開影像圖。
圖5,係本發明晶圓斷開影像圖。
圖6,係本發明比對區域選取示意圖。
Figure 1 is a structural diagram of a conventional wafer.
Figure 2 is a structural diagram of a conventional wafer splitting machine.
Figure 3 is a diagram showing the steps of the judgment method of the present invention.
Fig. 4 is a view showing the unbroken image of the wafer of the present invention.
Figure 5 is a diagram showing the wafer break image of the present invention.
Figure 6 is a schematic diagram showing the selection of the alignment area of the present invention.
為俾使貴委員對本發明之特徵、目的及功效,有著更加深入之瞭解與認同,茲列舉較佳實施例並配合圖式說明如后:
請參閱「圖3」、「圖4」與「圖5」所示,本發明為一種晶圓未斷灰階偵測方法,用於判斷一晶圓20進行劈裂後,該晶圓20是否斷開,其包含步驟S1:取得劈裂前晶圓影像、 步驟S2:試劈裂取得灰階變化臨界值、步驟S3:進行自動生產並開啟光源、步驟S4:劈裂晶圓、步驟S5:取得劈裂後晶圓影像與步驟S6:判斷晶圓是否斷開。
其中,步驟S1:取得劈裂前晶圓影像,為透過一影像擷取器擷取該晶圓劈裂前的晶圓影像。
步驟S2:試劈裂取得灰階變化臨界值,為透過手動試劈的方式,找出灰階變化臨界值,對於一般晶圓20來說,該晶圓20在斷開前,通常亮度較低(如「圖4」),具有較低的灰階值,而當晶圓20斷開後,則亮度會增加(如「圖5」),具有較高的灰階值。因此本發明可以選取整批晶圓20的任一個,進行手動試劈,並觀察其灰階值的變化,舉例來說,如果平均灰階值由50增加到150,則可以取中數值作為平均灰階值是否變化的臨界點,即臨界點為100。
步驟S3:進行自動生產並開啟光源,為開啟自動化作業,並透過一光源照射該晶圓20,主要目的在於增加該晶圓20的亮度。
步驟S4:劈裂晶圓,為對該晶圓20進行劈裂動作,其為透過習用的劈裂機進行劈裂晶圓20。
步驟S5:取得劈裂後晶圓影像,為透過該影像擷取器擷取該晶圓20劈裂後的晶圓影像。
步驟S6:判斷晶圓是否斷開,為透過一影像處理單元依據該晶圓20劈裂前的晶圓影像與該晶圓20劈裂後的晶圓影像的平均灰階值是否變化,來判定該晶圓20是否斷開。亦即對於其他晶圓20來說,可以設定該晶圓20劈裂後的晶圓影像的平均灰階值超過100(臨界值)時,判定為斷開,反之則為未斷開。
又本發明依據步驟S6的判斷結果,可再進行步驟S7:加深刀位,或是步驟S8:完成劈裂流程。其中步驟S7:加深刀位,為當判定該晶圓20未斷開時,加深劈裂動作的刀位深度,並回到步驟S4,其透過加深劈裂動作的刀位深度(即增加劈裂的深度)的方式,而使該晶圓20確實斷開。而步驟S8:完成劈裂流程,為當判定該晶圓20斷開時,則該晶圓20位移至下一刀位置,以進行下一刀的劈裂,以完成劈裂流程。
請再參閱「圖6」所示,本發明更可以包含一步驟S1-1:建立比對區域,其為在進行步驟S2之前,可讓使用者於該影像擷取器的擷取區域30內,針對於該晶圓20劈裂前的晶圓影像與該晶圓20劈裂後的晶圓影像,預期會有明顯變化處,圈選出一比對區域31,而該影像處理單元依據該比對區域31的平均灰階值是否變化,來判定該晶圓20是否斷開。因而透過該比對區域31的使用,可以增加該晶圓20劈裂前的晶圓影像與該晶圓20劈裂後的晶圓影像的平均灰階值差異,以加快判斷的速度與精確度。
如上所述,本發明藉由光具有快速反應的特性,透過取得該晶圓劈裂前的晶圓影像與該晶圓劈裂後的晶圓影像的平均灰階值,觀察其是否改變,而推定該晶圓是否斷開,其反應快速且對於影像解析度的要求不高,因而設置成本低廉,對於影像處理的運算負擔亦不大,可以快速的作出判定結果,以滿足使用上的需要。
綜上所述僅為本發明的較佳實施例而已,並非用來限定本發明之實施範圍,即凡依本發明申請專利範圍之內容所為的等效變化與修飾,皆應為本發明之技術範疇。
In order to give your members a deeper understanding and recognition of the features, purposes and effects of the present invention, the preferred embodiments are illustrated with the following description:
Referring to FIG. 3, FIG. 4 and FIG. 5, the present invention is a wafer unbroken gray level detecting method for determining whether a wafer 20 is cleaved after the wafer 20 is cleaved. Disconnected, comprising the step S1: obtaining the image of the wafer before the splitting, step S2: obtaining the threshold value of the gray scale change by the test splitting, step S3: performing automatic production and turning on the light source, step S4: splitting the wafer, step S5: Obtaining the split wafer image and step S6: determining whether the wafer is disconnected.
Step S1: obtaining the image of the wafer before the splitting, and capturing the image of the wafer before the splitting of the wafer through an image capture device.
Step S2: The threshold value of the gray scale change is obtained by trial splitting, and the threshold value of the gray scale change is found through a manual test. For the general wafer 20, the wafer 20 is usually low in brightness before being disconnected. (As in Figure 4), it has a lower grayscale value, and when the wafer 20 is disconnected, the brightness increases (as in Figure 5) and has a higher grayscale value. Therefore, the present invention can select any one of the entire batches of wafers 20, perform manual testing, and observe changes in grayscale values. For example, if the average grayscale value is increased from 50 to 150, the median value can be taken as an average. The critical point at which the grayscale value changes, that is, the critical point is 100.
Step S3: performing automatic production and turning on the light source, in order to start the automated operation, and irradiating the wafer 20 through a light source, the main purpose is to increase the brightness of the wafer 20.
Step S4: Splitting the wafer to perform the splitting operation on the wafer 20, which is to split the wafer 20 by a conventional splitting machine.
Step S5: Obtaining the image of the wafer after the splitting, and capturing the image of the wafer after the splitting of the wafer 20 through the image picker.
Step S6: determining whether the wafer is disconnected, and determining whether the average gray level value of the wafer image after the cracking of the wafer 20 and the wafer image after the wafer 20 is cleaved by an image processing unit is determined by an image processing unit. Whether the wafer 20 is broken. That is, for the other wafers 20, when the average gray scale value of the wafer image after the crack of the wafer 20 is set to exceed 100 (critical value), it is determined that the wafer is off, and if not, it is not turned off.
According to the determination result of step S6, the present invention may further perform step S7: deepen the location, or step S8: complete the splitting process. Step S7: deepening the tool position, when it is determined that the wafer 20 is not disconnected, deepening the tool depth of the cleaving action, and returning to step S4, the depth of the tool bit deepening the cleaving action (ie, increasing the cleaving) The depth of the way, while the wafer 20 is indeed disconnected. Step S8: The cleaving process is completed. When it is determined that the wafer 20 is disconnected, the wafer 20 is displaced to the next knife position to perform the splitting of the next knife to complete the cleaving process.
Referring to FIG. 6 again, the present invention may further include a step S1-1: establishing a comparison area, which may be used by the user in the capture area 30 of the image capture device before performing step S2. For the wafer image before the cleaving of the wafer 20 and the wafer image after the cleaving of the wafer 20, it is expected that there will be a significant change, and a comparison region 31 is selected, and the image processing unit according to the ratio Whether or not the wafer 20 is disconnected is determined as to whether or not the average grayscale value of the region 31 changes. Therefore, through the use of the comparison area 31, the difference between the average gray level value of the wafer image before the crack of the wafer 20 and the wafer image after the wafer 20 is split can be increased to speed up the judgment and the accuracy. .
As described above, the present invention observes whether the wafer has a rapid response characteristic, and obtains an average gray scale value of the wafer image before the wafer is split and the wafer is cleaved to observe whether the wafer is changed. It is presumed that the wafer is disconnected, the response is fast, and the image resolution is not high, so the installation cost is low, and the computational burden on image processing is not large, and the determination result can be quickly made to meet the needs of use.
The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the equivalent changes and modifications of the content of the patent application of the present invention should be the technology of the present invention. category.
S1...取得劈裂前晶圓影像S1. . . Obtaining a pre-crack wafer image
S1-1...建立比對區域S1-1. . . Establish comparison area
S2...試劈裂取得灰階變化臨界值S2. . . Triggering to obtain the critical value of gray scale change
S3...進行自動生產並開啟光源S3. . . Automated production and turn on the light source
S4...劈裂晶圓S4. . . Splitting wafer
S5...取得劈裂後晶圓影像S5. . . Obtaining a wafer image after splitting
S6...判斷晶圓是否斷開S6. . . Determine if the wafer is disconnected
S7...加深刀位S7. . . Deepen the knife position
S8...完成劈裂流程S8. . . Complete the splitting process
Claims (4)
步驟S1:取得劈裂前晶圓影像,為透過一影像擷取器擷取該晶圓劈裂前的晶圓影像;
步驟S2:試劈裂取得灰階變化臨界值,為透過手動試劈的方式,找出灰階變化臨界值;
步驟S3:進行自動生產並開啟光源,為開啟自動化作業,並透過一光源照射該晶圓;
步驟S4:劈裂晶圓,為對該晶圓進行劈裂動作;
步驟S5:取得劈裂後晶圓影像,為透過該影像擷取器擷取該晶圓劈裂後的晶圓影像;
步驟S6:判斷晶圓是否斷開,為透過一影像處理單元依據該晶圓劈裂前的晶圓影像與該晶圓劈裂後的晶圓影像的平均灰階值是否變化,來判定該晶圓是否斷開。A method for detecting a gray level of a wafer for determining whether a wafer is broken after a wafer is cleaved, comprising:
Step S1: obtaining a pre-crack wafer image, and capturing an image of the wafer before the cleaving of the wafer through an image capture device;
Step S2: obtaining a critical value of the gray scale change by trial splitting, and finding a critical value of the gray scale change by means of manual test;
Step S3: performing automatic production and turning on the light source, in order to start the automatic operation, and irradiating the wafer through a light source;
Step S4: splitting the wafer to perform a splitting operation on the wafer;
Step S5: obtaining the image of the wafer after the splitting, and capturing the image of the wafer after the splitting of the wafer through the image picker;
Step S6: determining whether the wafer is disconnected, and determining whether the wafer is determined by an image processing unit according to whether the wafer image before the splitting of the wafer and the average gray scale value of the wafer image after the wafer splitting are changed. Whether the circle is broken.
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TWI512865B (en) * | 2008-09-08 | 2015-12-11 | Rudolph Technologies Inc | Wafer edge inspection |
TWI404156B (en) * | 2009-03-06 | 2013-08-01 | Univ Nat Kaohsiung Applied Sci | Contour-detecting method for sawing lanes of a wafer |
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