TW201417338A - 半導體發光元件 - Google Patents

半導體發光元件 Download PDF

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Publication number
TW201417338A
TW201417338A TW102137805A TW102137805A TW201417338A TW 201417338 A TW201417338 A TW 201417338A TW 102137805 A TW102137805 A TW 102137805A TW 102137805 A TW102137805 A TW 102137805A TW 201417338 A TW201417338 A TW 201417338A
Authority
TW
Taiwan
Prior art keywords
layer
extension electrode
emitting device
trench
semiconductor layer
Prior art date
Application number
TW102137805A
Other languages
English (en)
Chinese (zh)
Inventor
Seung-Joo Hwang
Dong-Woo Kim
Jung-Sub Song
Original Assignee
Iljin Led Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iljin Led Co Ltd filed Critical Iljin Led Co Ltd
Publication of TW201417338A publication Critical patent/TW201417338A/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW102137805A 2012-10-18 2013-10-18 半導體發光元件 TW201417338A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120116242A KR101552670B1 (ko) 2012-10-18 2012-10-18 발광 영역 분리 트렌치를 갖는 전류 분산 효과가 우수한 고휘도 반도체 발광소자

Publications (1)

Publication Number Publication Date
TW201417338A true TW201417338A (zh) 2014-05-01

Family

ID=50488473

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102137805A TW201417338A (zh) 2012-10-18 2013-10-18 半導體發光元件

Country Status (3)

Country Link
KR (1) KR101552670B1 (ko)
TW (1) TW201417338A (ko)
WO (1) WO2014061971A1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI557943B (zh) * 2014-11-18 2016-11-11 錼創科技股份有限公司 發光元件的電極結構
US9620678B2 (en) 2014-11-18 2017-04-11 PlayNitride Inc. Electrode structure of light emitting device
CN109616562A (zh) * 2018-11-13 2019-04-12 厦门乾照光电股份有限公司 Led发光芯片

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9812616B2 (en) 2014-07-31 2017-11-07 Seoul Viosys Co., Ltd. Light-emitting diode
KR20160027875A (ko) * 2014-08-28 2016-03-10 서울바이오시스 주식회사 발광소자
CN104659169A (zh) * 2015-02-15 2015-05-27 映瑞光电科技(上海)有限公司 一种简易倒装led及其制作方法
KR102623615B1 (ko) * 2015-09-25 2024-01-11 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자, 발광소자 패키지 및 발광장치
CN111987211B (zh) * 2015-11-18 2024-01-30 晶元光电股份有限公司 发光元件
US10090440B1 (en) 2017-05-05 2018-10-02 Epistar Corporation Light-emitting device and method of manufacturing thereof
US20210167252A1 (en) * 2018-07-04 2021-06-03 Lg Innotek Co., Ltd. Semiconductor device and manufacturing method therefor
KR102572340B1 (ko) 2018-08-21 2023-08-31 삼성디스플레이 주식회사 표시 장치 및 표시 장치 제조 방법
CN110911537B (zh) * 2019-11-29 2021-12-28 东莞市中晶半导体科技有限公司 共阴极led芯片及其制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4353232B2 (ja) * 2006-10-24 2009-10-28 ソニー株式会社 発光素子
KR100849826B1 (ko) * 2007-03-29 2008-07-31 삼성전기주식회사 발광소자 및 이를 포함하는 패키지
KR101711960B1 (ko) * 2010-07-01 2017-03-06 삼성전자주식회사 반도체 발광장치
JP2012074665A (ja) * 2010-09-01 2012-04-12 Hitachi Cable Ltd 発光ダイオード
KR101087970B1 (ko) * 2010-10-25 2011-12-01 주식회사 세미콘라이트 반도체 발광소자

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI557943B (zh) * 2014-11-18 2016-11-11 錼創科技股份有限公司 發光元件的電極結構
US9620678B2 (en) 2014-11-18 2017-04-11 PlayNitride Inc. Electrode structure of light emitting device
CN109616562A (zh) * 2018-11-13 2019-04-12 厦门乾照光电股份有限公司 Led发光芯片

Also Published As

Publication number Publication date
WO2014061971A1 (ko) 2014-04-24
KR20140049877A (ko) 2014-04-28
KR101552670B1 (ko) 2015-09-11

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