TW201414012A - Light-emitting device and manufacturing method thereof - Google Patents

Abstract

A light-emitting device includes an epitaxial structure, a mirror layer, a first protection layer and a barrier layer. The mirror layer is disposed on the epitaxial structure. The first protection layer is disposed on the mirror layer and the epitaxial structure and at least covered on a sidewall of the mirror layer. The barrier layer is disposed on the first protection layer and the epitaxial structure, and covered the first protection layer completely. Above the barrier layer has a first electrode. The invention also discloses a manufacturing method of the light-emitting device.

Description

Light emitting device and manufacturing method thereof

The present invention relates to a light-emitting device and a method of fabricating the same, and more particularly to a light-emitting diode light-emitting device and a method of fabricating the same.

The light-emitting diode is a light-emitting element made of a semiconductor material, and has the advantages of low power consumption, long component life, fast reaction speed, and the like, and the small size is easy to be made into a very small or array type component. As technology continues to advance, its range of applications has expanded from indicator lights and backlights to lighting.

Please refer to FIG. 1 , which is a schematic cross-sectional view of a conventional light-emitting device 1 . Here, the light-emitting device 1 is a flip-chip structure light-emitting diode, and FIG. 1 is exemplified by downward light-emitting.

The light-emitting device 1 includes an epitaxial substrate 11 , an epitaxial structure 12 , a reflective layer 13 , a protective layer 14 , a barrier layer 15 , and an insulating layer 16 . In addition, the illuminating device 1 further includes a first electrode P1 and a second electrode P2.

The epitaxial structure 12 is disposed on the epitaxial substrate 11 , and the reflective layer 13 is disposed on the epitaxial structure 12 . The epitaxial structure 12 has an n-GaN layer 121, a multiple quantum well layer 122, and a p-GaN layer 123. The reflective layer 13 is generally a high-reflectivity metal material to reflect the light emitted by the light-emitting device 1 to improve the light-emitting efficiency of the light-emitting device 1. In addition, the protective layer 14 is disposed on one of the top surfaces 132 of the reflective layer 13, and the barrier layer 15 is disposed on the protective layer. Above the protective layer 14, and covering the protective layer 14 and the reflective layer 13. Wherein, the protective layer 14 can protect the reflective layer 13 from the subsequent process damage to the reflective layer 13 and cause a decrease in reflectivity. In addition, the barrier layer 15 can protect the reflective layer 13 from problems such as diffusion or deterioration of the reflective layer 13 due to subsequent processes or component operations. In addition, the insulating layer 16 is disposed on the barrier layer 15 , and the first electrode P1 and the second electrode P2 are respectively disposed on the barrier layer 15 and the n-GaN layer 121 and exposed to the insulating layer 16 . The first electrode P1 is electrically connected to the p-GaN layer 123 of the epitaxial structure 12 through the barrier layer 15 , the protective layer 14 and the reflective layer 13 , and the n-GaN layer 121 of the second electrode P2 and the epitaxial structure 12 . Electrical connection. By supplying power to the first electrode P1 and the second electrode P2 and reflecting by the light of the reflective layer 13, the light-emitting device 1 can emit downward light.

However, in the structure of the conventional light-emitting device 1, although the protective layer 14 can protect the top surface 132 of the reflective layer 13, it cannot protect the sidewall 131 of the reflective layer 13, so that chemicals or high temperatures in subsequent processes still cause The side wall 131 of the reflective layer 13 causes damage or cracks, causing problems such as a decrease in reflectance and a poor yield of the light-emitting device 1. In addition, in the process of the reflective layer 13, the problem of the wire often occurs on the sidewall 131 of the reflective layer 13, resulting in poor coverage of the barrier layer 15 and the insulating layer 16 of the subsequent process, resulting in a decrease in the yield of the light-emitting device 1. .

Therefore, how to provide a light-emitting device and a manufacturing method thereof can improve the problem of the exposed side wall of the reflective layer, so that the reflective layer is not reduced in reflectivity due to chemical defects or high temperature in subsequent processes, resulting in a decrease in the yield of the light-emitting device, which is The goal of hard work.

In view of the above problems, an object of the present invention is to provide a light-emitting device and a method for fabricating the same, which can improve the problem of the exposed side wall of the reflective layer, so that the reflective layer is not reduced in reflectivity due to chemical defects or high temperature in subsequent processes, resulting in the light-emitting device. Yield is reduced.

To achieve the above objective, the present invention provides a light emitting device including an epitaxial structure, a reflective layer, a first protective layer, and a barrier layer. The reflective layer is disposed on the epitaxial structure. The first protective layer is disposed on the reflective layer and the epitaxial structure and covers at least one sidewall of the reflective layer. The barrier layer is disposed on the first protective layer and the epitaxial structure, and completely covers the first protective layer, and has a first electrode on the barrier layer.

In a preferred embodiment of the present invention, the light emitting device further includes an epitaxial substrate, and the epitaxial structure, the reflective layer, the first protective layer, and the barrier layer are disposed on the epitaxial substrate.

In a preferred embodiment of the present invention, the epitaxial structure has a first semiconductor layer, an active layer, and a second semiconductor layer, and the active layer is sandwiched between the first semiconductor layer and the second semiconductor layer.

In a preferred embodiment of the present invention, the light emitting device further includes a second protective layer disposed on a top surface of the reflective layer and sandwiched between the first protective layer and the reflective layer.

In a preferred embodiment of the present invention, the light emitting device further includes an insulating layer disposed on the barrier layer and the epitaxial structure.

In a preferred embodiment of the present invention, the light emitting device further includes a second The electrode is disposed on one of the first semiconductor layers of the epitaxial structure, and the first electrode and the second electrode are located on the same side of the epitaxial substrate.

In a preferred embodiment of the invention, the light emitting device further includes a bonding layer disposed on the barrier layer.

In a preferred embodiment of the present invention, the light emitting device further includes a heat conductive substrate disposed on the bonding layer, wherein the heat conductive substrate is a first electrode.

In a preferred embodiment of the present invention, the light emitting device further includes an electrode layer disposed on a surface of the epitaxial structure away from the reflective layer.

In a preferred embodiment of the invention, the material of the reflective layer comprises silver, aluminum, gold, titanium, chromium, nickel, indium tin oxide, or a combination thereof.

In a preferred embodiment of the present invention, the material of the first protective layer comprises nickel, titanium, tungsten, or a combination thereof.

In a preferred embodiment of the invention, the material of the thermally conductive substrate comprises beryllium, copper, aluminum, copper manganese alloy, or a combination thereof.

In order to achieve the above object, the present invention provides a method for fabricating a light-emitting device, comprising: forming an epitaxial structure on an epitaxial substrate; forming a reflective layer on the epitaxial structure; forming a first protective layer on the reflective layer and epitaxial Structurally, wherein the first protective layer covers at least one sidewall of the reflective layer; and a barrier layer is formed on the first protective layer and the epitaxial structure, wherein the barrier layer completely covers the first protective layer.

In a preferred embodiment of the present invention, the manufacturing method further comprises forming a second protective layer on a top surface of the reflective layer and sandwiching between the first protective layer and the reflective layer.

In a preferred embodiment of the present invention, the manufacturing method further includes forming a The insulating layer is on the barrier layer and the epitaxial structure.

In a preferred embodiment of the present invention, the method further includes forming a first electrode over the barrier layer; and forming a second electrode on the first semiconductor layer of the epitaxial structure, wherein the first electrode The second electrode is located on the same side of the epitaxial substrate.

In a preferred embodiment of the present invention, the method further includes: forming a first bonding layer on the barrier layer; forming a second bonding layer on a thermally conductive substrate; and transmitting the first bonding layer and the second bonding layer Bonding the thermally conductive substrate over the barrier layer.

In a preferred embodiment of the invention, the fabrication method further includes removing the epitaxial substrate.

In a preferred embodiment of the invention, the fabrication method further includes forming an electrode layer on the surface of the epitaxial structure away from the reflective layer.

In a preferred embodiment of the invention, the reflective layer is deposited by evaporation or sputtering and an alloy process to form an epitaxial structure.

In a preferred embodiment of the invention, the first protective layer is deposited by evaporation or sputtering and formed on the reflective layer and the epitaxial structure by an etching or floating process.

In a preferred embodiment of the present invention, the barrier layer is deposited by evaporation or sputtering and formed on the first protective layer and the epitaxial structure through a floating process. As described above, in the light-emitting device and the manufacturing method according to the present invention, the reflective layer is disposed on the epitaxial structure, and the first protective layer is disposed on the reflective layer and the epitaxial structure and covers at least one sidewall of the reflective layer. The barrier layer is disposed on the first protective layer and the epitaxial structure, and completely covers the first protection a layer and a first electrode above the barrier layer. Therefore, compared with the prior art, the first protective layer of the present invention covers at least one sidewall of the reflective layer, except that the illuminating device is prevented from being damaged to the side wall of the reflective layer by chemicals or high-temperature processes used in subsequent processes. When the reflectance is lowered, the yield of the light-emitting device is lowered, and the problem that the wire of the reflective layer appears and the barrier layer of the subsequent process and the insulating layer are not well covered is improved.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a light-emitting device and a method of fabricating the same according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

2A is a cross-sectional view of a light emitting device 2 in accordance with a preferred embodiment of the present invention. The light-emitting device 2 of the present embodiment is a flip-chip structure light-emitting diode, and is a case of downward illumination.

The light emitting device 2 includes an epitaxial substrate 21, an epitaxial structure 22, a reflective layer 23, a first protective layer 24, and a barrier layer 26. In addition, the illuminating device 2 further includes a second protective layer 25, an insulating layer 27, a first electrode P1 and a second electrode P2. Here, the epitaxial structure 22, the reflective layer 23, the first protective layer 24, the second protective layer 25, the barrier layer 26, and the insulating layer 27 are respectively disposed on the epitaxial substrate 21.

The epitaxial substrate 21 may be light transmissive or opaque. In the present embodiment, the epitaxial substrate 21 is exemplified by a light transmissive sapphire substrate (Sapphire). Of course, the epitaxial substrate 21 may also be tantalum carbide, aluminum oxide, gallium nitride, glass, quartz, gallium phosphide or gallium arsenide substrate, etc., when the epitaxial substrate 21 In the case of an opaque substrate, the epitaxial substrate 21 must be removed after all of the luminescent diode processes are completed to avoid the occurrence of shading. In addition, the epitaxial structure 22 is in the material gap, and the commonly used group III-V elements are composed up to four types: GaP/GaAsP series, AlGaAs series, AlGaInP series, and GaN series. Here, the epitaxial structure 22 has a first semiconductor layer 221, an active layer 222, and a second semiconductor layer 223 as an example. The first semiconductor layer 221 , the active layer 222 , and the second semiconductor layer 223 are sequentially adjacent to the epitaxial substrate 21 and away from the epitaxial substrate 21 . The first semiconductor layer 221 and the second semiconductor layer 223 have different electrical properties. When the first semiconductor layer 221 is P-type, the second electrical semiconductor layer 223 is N-type; and when the first semiconductor 221 layer is N-type, The second semiconductor layer 223 is of a P type. Here, the first semiconductor layer 221 is N-type gallium nitride (GaN), the active layer 222 is a multiple quantum-well (MQW) structure, and the second semiconductor layer 223 is a P-type gallium nitride. For example. The first semiconductor layer 221 of this embodiment is partially exposed for use as a subsequent electrode.

The reflective layer 23 is disposed on the epitaxial structure 22. The reflective layer 23 of the embodiment may be a single layer of high reflectivity metal layer or a plurality of high reflectivity metal layers, and the material thereof may include, for example, silver, aluminum, gold, titanium, chromium, nickel, indium tin oxide. Or a combination thereof, and for example, may be a single layer of silver, a double layer of nickel/silver, or indium tin oxide/silver to improve the reflectance of light and improve the ohmic contact between the reflective layer 23 and the second semiconductor layer 223. characteristic.

The first protective layer 24 is disposed on the reflective layer 23 and the epitaxial structure 22 and covers at least one sidewall 231 of the reflective layer 23 . In this embodiment, A second protective layer 25 is disposed on one of the top surfaces 232 of the reflective layer 23, and then a first protective layer 24 is disposed on the second protective layer 25, the reflective layer 23, and the epitaxial structure 22. In the present embodiment, the first protective layer 24 completely covers the sidewall 231 of the reflective layer 23 and a portion of the top surface 232 not covered by the second protective layer 25, and contacts the second semiconductor layer 223 of the epitaxial structure 22. The first protective layer 24 and the second protective layer 25 may be composed of a single layer or a plurality of metal layers, and may be the same or different materials, and the material thereof may include, for example, nickel, titanium, tungsten, or a combination thereof. The first protective layer 24 and the second protective layer 25 may be, for example, a single layer of nickel, titanium, tungsten or titanium tungsten, or a double layer of nickel/titanium or the like.

The second protective layer 14 of the present embodiment can protect the reflective layer 23 from chemicals or high temperature damage used in subsequent processes to the top surface 232 of the reflective layer 23, resulting in a decrease in reflectivity. In addition, in the embodiment, in order to protect the sidewall 231 of the reflective layer 23, the first protective layer 24 of the present invention completely covers the sidewall 231 of the reflective layer 23 and a portion of the top surface 232 not covered by the second protective layer 25. In addition to avoiding the damage of the chemicals used in the subsequent process or the high-temperature process damage to the reflective layer 23, resulting in a decrease in the reflectance, resulting in a decrease in the yield of the light-emitting device 2, the appearance of the wire in the reflective layer 23 may be improved, resulting in hindrance to subsequent processes. Problems such as poor coverage of the barrier layer 26 and the insulating layer 27.

The barrier layer 26 is disposed on the first protective layer 24 and the epitaxial structure 22. Here, the barrier layer 26 completely covers the first protective layer 24 and contacts the second semiconductor layer 223 of the epitaxial structure 22 . The barrier layer 26 can protect the reflective layer 23 from the diffusion or inferiority of the reflective layer 23 due to subsequent processes or component operations. And other issues. The barrier layer 26 can be deposited by evaporation or sputtering and formed on the first protective layer 24 and the epitaxial structure 22 by a lift-off process. The barrier layer 26 may be composed of a single layer or a plurality of layers of metal materials, and may be made of, for example, nickel, titanium, tungsten, gold, platinum, or a combination thereof, and may be, for example, a single layer of nickel, titanium, gold, tungsten, or the like. Platinum or titanium tungsten, or double layer nickel/titanium, gold/tungsten or titanium tungsten/platinum, or three layers of nickel/titanium/platinum, or four layers of titanium/nickel/titanium/platinum.

The insulating layer 27 is disposed on the barrier layer 26 and the epitaxial structure 22. Here, the insulating layer 27 covers the barrier layer 26 and contacts the epitaxial structure 22. The insulating layer 27 may be made of, for example, a single layer or a plurality of layers of a highly insulating material such as cerium oxide (SiO ₂ ), cerium nitride (SiN _X ), titanium oxide (TiO ₂ ), or SOG.

In addition, the first electrode P1 is disposed on the barrier layer 26, and the second electrode P2 is disposed on the first semiconductor layer 221 exposed by the epitaxial structure 22 to complete the light emission of the flip-chip light-emitting diode. Device 2. Specifically, the first electrode P1 and the second electrode P2 are located on the same side of the epitaxial substrate 21. Here, the insulating layer 27 does not cover the first electrode P1 and the second electrode P2. After the insulating layer 27 is deposited on the barrier layer 26 and the epitaxial structure 22, the barrier layer 26 and a portion of the insulating layer 27 on the first semiconductor layer 221 may be removed by etching (wet or dry) or floating process. To define the pattern regions of the first electrode P1 and the second electrode P2, the first electrode P1 and the second electrode P2 are respectively disposed on the barrier layer 26 and the region where the first semiconductor layer 221 is not covered by the insulating layer 27. Wherein, the first electrode P1 and the second electrode P2 may be formed by vapor deposition or sputtering deposition and by a floating process. The first electrode P1 and the second electrode P2 may be composed of a single layer or a plurality of layers of metal materials. The material may, for example, comprise gold, tin, aluminum, chromium, platinum, titanium, or a combination thereof, and may be, for example, a single layer of gold, aluminum or gold tin, or a double layer of titanium/gold or titanium/aluminum, or three layers. Chromium/platinum/gold, etc. The light-emitting device 2 can emit downward light by supplying power to the first electrode P1 and the second electrode P2 and reflecting by the light of the reflective layer 23.

It is worth mentioning that the laser can be used to focus on the interface between the epitaxial substrate 21 and the first semiconductor layer 221 to peel off the epitaxial substrate 21 and the epitaxial structure 22, so that the light-emitting device does not have the epitaxial substrate 21 and becomes another An embodiment of a light emitting diode illuminating device.

Please refer to FIG. 2B, which is a cross-sectional view of a light-emitting device 2a according to another embodiment of the present invention.

The main difference between the illuminating device 2a and the illuminating device 2 is that the illuminating device 2a does not have the second protective layer 25, but completely covers the sidewall 231 and the top surface 232 of the reflective layer 23 by the first protective layer 24 to protect the reflective layer. 23, in addition to improving the appearance of the wire in the reflective layer 23, resulting in poor coverage of the barrier layer 26 and the insulating layer 27 of the subsequent process, and avoiding damage to the reflective layer 23 caused by chemicals or high-temperature processes used in subsequent processes. The reflectance is lowered, resulting in a decrease in the yield of the light-emitting device 2a.

In addition, other technical features of the illuminating device 2a can refer to the same components of the illuminating device 2, and details are not described herein again.

In addition, please refer to FIG. 2C, which is a cross-sectional view of a light-emitting device 2b according to another preferred embodiment of the present invention. The light-emitting device 2b of the present embodiment is a metal bonding or wafer bonding light-emitting diode, and is exemplified by downward light-emitting.

The epitaxial structure 22, the reflective layer 23, the first protective layer 24, the second protective layer 25, and the barrier layer 26 of the light-emitting device 2b are the same as the light-emitting device 2.

The main difference between the illuminating device 2b and the illuminating device 2 is that the illuminating device 2b does not have the epitaxial substrate 21 of the illuminating device 2, the insulating layer 27, the first electrode P1 and the second electrode P2, but includes a bonding layer 28 and a The heat conductive substrate 29 and an electrode layer P.

The bonding layer 28 is disposed on the barrier layer 26, the thermally conductive substrate 29 is disposed on the bonding layer 28, and the electrode layer P is disposed on the surface 224 of the epitaxial structure 22 away from the reflective layer 23. The electrode layer P is disposed on the first semiconductive layer 221 of the epitaxial substrate 21 and may be a transparent conductive layer.

The bonding layer 28 is used to bond the barrier layer 26 and the thermally conductive substrate 29. The bonding layer 28 can bond and electrically connect the barrier layer 26 to the thermally conductive substrate 29. The bonding layer 28 may be composed of a single layer or a plurality of layers of metal materials, and may be made of, for example, gold, tin, aluminum, chromium, platinum, titanium, or a combination thereof, and may be, for example, a single layer of gold, aluminum or gold tin. Or double layer of titanium/gold or titanium/aluminum, or three layers of chromium/platinum/gold.

The heat conductive substrate 29 is a substrate having a high thermal conductivity and is bonded to the barrier layer 26 through the bonding layer 28. The heat conductive substrate 29 is also a conductive substrate, and the material thereof may include, for example, germanium, copper, aluminum, manganese or other metal materials, or a combination thereof, and may be, for example, a germanium substrate (the surface may have a conductive layer), a copper substrate, and aluminum. Substrate, copper-manganese substrate or other highly thermally conductive substrate. By the arrangement of the heat-conducting substrate 29, the heat generated by the light-emitting device 2b can be transmitted to the heat-conducting substrate 29 of the high-heat-conducting material through the barrier layer 26 and the bonding layer 28 to be emitted, so as to improve the reliability of the product of the light-emitting device 2b. Due to the thermally conductive substrate 29 Also being a conductive substrate, the thermally conductive substrate 29 can be used as an electrode (also referred to as a first electrode), and the electrode layer P can be used as another electrode (also referred to as a second electrode). The heat conducting substrate 29 and the electrode layer P are reflected by the light of the reflecting layer 23, so that the light emitting device 2b emits downward light.

3A and FIG. 4A to FIG. 4F, FIG. 3A is a flowchart of a method for fabricating a light-emitting device 2 according to a preferred embodiment of the present invention, and FIGS. 4A to 4F are respectively preferred embodiments of the present invention. A schematic diagram of a manufacturing process of a light-emitting device 2 of an embodiment.

The manufacturing method of the light-emitting device 2 of the present invention may include steps S01 to S04.

In step S01, as shown in FIG. 4A, an epitaxial structure 22 is formed on an epitaxial substrate 21. Herein, a portion of the first semiconductor layer 221 of the epitaxial structure 21 may be exposed by an etching process to serve as a subsequent electrode. In other embodiments, in order to determine that a portion of the first semiconductor layer 221 may be exposed, the first semiconductor layer 221 of the etching process removal portion may also be controlled to ensure that the first semiconductor layer 221 may be exposed. Among them, the main epitaxial methods for forming the epitaxial structure 22 include liquid phase epitaxy (LPE), Vapor Phase Epitaxy (VPE), and organometallic vapor phase epitaxy (Metal-organic). Chemical Vapor Deposition, MOCVD), without limitation.

Next, in step S02, as shown in FIG. 4B, a reflective layer 23 is formed on the epitaxial structure 22. Wherein, the reflective layer 23 can be disposed on the epitaxial layer through a deposition process such as electron gun (E-Gun) evaporation or sputtering. On the structure 22, an annealing step is performed at a temperature of 325 to 550 ° C, and the contact resistance between the epitaxial structure 22 and the reflective layer 23 is reduced by heat through the alloying step, and the reflection of the light by the reflective layer 23 can be improved. rate. In this embodiment, before the step S03 is performed, the manufacturing method may further include: forming a second protective layer 25 on one of the top surfaces 232 of the reflective layer 23. Here, the second protective layer 25 is formed on a portion of the top surface 232 of the reflective layer 23, and a portion of the top surface 232 of a sidewall 231 adjacent to the reflective layer 23 does not have the second protective layer 25. However, the second protective layer 25 may also be formed on all of the top surfaces 232 of the reflective layer 23. Of course, in other implementations, the light emitting device may not have the second protective layer 25. The second protective layer 25 can be used in the same deposition process as the reflective layer 23 to sequentially deposit the reflective layer 23 and the second protective layer 25 on the epitaxial structure 22, and then pass through the lithography and etching (wet or dry). Or the floating process and the like complete the pattern definition of the reflective layer 23 and the second protective layer 25, respectively.

Next, step S03 is performed. As shown in FIG. 4C, a first protective layer 24 is formed on the reflective layer 23 and the epitaxial structure 22, and the first protective layer 24 covers at least one sidewall 231 of the reflective layer 23. The first protective layer 24 is formed on the reflective layer 23, the second protective layer 25 and the epitaxial structure 22 to completely cover the reflective layer 23 and the second protective layer 25 to protect the top surface 232 of the reflective layer 23 and Side wall 231. Here, after the pattern definition of the second protective layer 25 and the reflective layer 23 is deposited, the first protective layer 24 is deposited, and an electron gun (E-Gun) evaporation or sputtering deposition process may be used to provide the first protection. The layer 24 is deposited on the second protective layer 25 and the reflective layer 23 such that the first protective layer 24 can completely cover the second protective layer 25 and the reflective layer 23.

Next, step S04 is performed. As shown in FIG. 4D, a barrier layer 26 is formed on the first protective layer 24 and the epitaxial structure 22, wherein the barrier layer 26 completely covers the first protective layer 24. Here, the barrier layer 26 is a metal layer and completely covers the first protective layer 24.

In addition, please refer to FIG. 3B, which is another flow chart of a method for fabricating the light-emitting device 2 according to a preferred embodiment of the present invention.

The manufacturing method of the illuminating device 2 may further include steps S05 to S07.

As shown in FIG. 4E, step S05 is to form an insulating layer 27 on the barrier layer 26 and the epitaxial structure 22. Here, the insulating layer 27 is deposited on the barrier layer 26 and the epitaxial structure 22 by vapor deposition or sputtering.

Finally, in step S06 and step S07, as shown in FIG. 4F, a first electrode P1 is formed on the barrier layer 26, and a second electrode P2 is formed on the first semiconductor layer 221 of the epitaxial structure 22. The first electrode P1 and the second electrode P2 are located on the same side of the epitaxial substrate 21. In the present embodiment, the insulating layer 27 does not cover the first electrode P1 and the second electrode P2. Here, before the first electrode P1 and the second electrode P2 are formed, after the insulating layer 27 is deposited on the barrier layer 26 and the epitaxial structure 22, the barrier layer 26 and the first layer are respectively removed by an etching or floating process. A portion of the insulating layer 27 on the semiconductor layer 221 defines a pattern of the first electrode P1 and the second electrode P2. Then, the first electrode P1 and the second electrode P2 are formed on the barrier layer 26 and the region of the first semiconductor layer 221 that are not covered by the insulating layer 27, respectively. In this way, the method of fabricating the light-emitting device 2 is completed.

In addition, other technical features of the manufacturing method of the light-emitting device 2, including the materials of the respective components, the processes thereof, and the like can be referred to the description of the same components. This will not be repeated here.

3C and FIG. 5A to FIG. 5C, wherein FIG. 3C is a flowchart of a method for fabricating a light-emitting device 2b according to another preferred embodiment of the present invention, and FIGS. 5A to 5C are respectively the present invention. A schematic diagram of a manufacturing process of a light-emitting device 2b according to another preferred embodiment.

The manufacturing method of the light-emitting device 2b of the present invention may include steps P01 to P09. Steps P01 to P04 are the same as steps S01 to S04, respectively, and are not described again.

In step P05 and step P06, as shown in FIG. 5A, a first bonding layer 281 is formed on the barrier layer 26, and a second bonding layer 282 is formed on a thermally conductive substrate 29. The first bonding layer 281 and the second bonding layer 282 are respectively formed on the barrier layer 26 and the heat conductive substrate 29 by vapor deposition or sputtering. The first bonding layer 281 and the second bonding layer 282 of the embodiment may be composed of a single layer or a plurality of layers of metal materials, and the materials thereof may include, for example, gold, tin, aluminum, chromium, platinum, titanium, or a combination thereof, respectively. For example, it may be a single layer of gold, aluminum or gold tin, or a double layer of titanium/gold or titanium/aluminum, or a triple layer of chromium/platinum/gold. Wherein, chromium or titanium is used as the barrier layer 26 and the heat conductive substrate 29, and platinum acts as a barrier layer to prevent the interdiffusion of chromium and gold atoms, and gold can be used for the bonding of the subsequent processes to gold. Layer-gold layer docking.

Next, step P07 is performed to bond the thermally conductive substrate 29 over the barrier layer 26 through the first bonding layer 281 and the second bonding layer 282 as shown in FIG. 5B. Specifically, the thermally conductive substrate 29 can be bonded to the barrier layer 26 through the first bonding layer 281 and the second bonding layer 282. Here, the bonded first bonding layer 281 and the second bonding layer 282 may form a bonding layer 28 .

In addition, step P08 is to remove the epitaxial substrate 21. In this embodiment, the first semiconductor layer 221 of the epitaxial structure 22 is laser-focused on one side of the epitaxial substrate 21, and the first semiconductor layer 221 of the dissociated portion is separated by laser focusing to separate the epitaxial substrate 21 and Epitaxial structure 22.

Finally, step P09 is performed. As shown in FIG. 5C, an electrode layer P is formed on the surface 224 of the epitaxial structure 22 away from the reflective layer 23. Here, the electrode layer P is formed on the first semiconductive layer 221 of the epitaxial substrate 21 . Since the heat conductive substrate 29 is also a conductive substrate, the heat conductive substrate 29 can be used as an electrode, and the electrode layer P can be regarded as another electrode, and the heat conductive substrate 29 and the electrode layer P can be supplied with power through reflection. The light of layer 23 is reflected so that the light-emitting device 2b emits downward light.

In addition, other technical features of the manufacturing method of the light-emitting device 2b, including the materials of the respective components, the processes thereof, and the like can be referred to the description of the same components, and will not be described herein.

In summary, in the light-emitting device and the manufacturing method according to the present invention, the reflective layer is disposed on the epitaxial structure, and the first protective layer is disposed on the reflective layer and the epitaxial structure, and covers at least one sidewall of the reflective layer. The barrier layer is disposed on the first protective layer and the epitaxial structure, and completely covers the first protective layer, and has a first electrode on the barrier layer. Therefore, compared with the prior art, the first protective layer of the present invention covers at least one sidewall of the reflective layer, except that the illuminating device is prevented from being damaged to the side wall of the reflective layer by chemicals or high-temperature processes used in subsequent processes. When the reflectance is lowered, the yield of the light-emitting device is lowered, and the problem that the wire of the reflective layer appears and the barrier layer of the subsequent process and the insulating layer are not well covered is improved.

The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of this creation shall be included in the scope of the appended patent application.

1, 2, 2a, 2b‧‧‧ illuminating devices

11, 21‧‧‧ epitaxial substrate

12, 22‧‧‧ epitaxial structure

121‧‧‧n-GaN layer

122‧‧‧Multiple Quantum Wells

123‧‧‧p-GaN layer

13, 23‧‧‧reflective layer

131, 231‧‧‧ side wall

132, 232‧‧‧ top

14‧‧‧Protective layer

15, 26‧‧‧ barrier layer

16, 27‧‧‧Insulation

221‧‧‧First semiconductor layer

222‧‧‧ active layer

223‧‧‧Second semiconductor layer

24‧‧‧First protective layer

25‧‧‧Second protective layer

28‧‧‧Connection layer

281‧‧‧First joint layer

282‧‧‧Second joint layer

29‧‧‧thermal substrate

P‧‧‧electrode layer

P1‧‧‧first electrode

P2‧‧‧second electrode

P01~P09, S01~S07‧‧‧ steps

1 is a schematic cross-sectional view of a light-emitting device according to a preferred embodiment of the present invention; FIG. 2B is a cross-sectional view of a light-emitting device according to another embodiment of the present invention; 2C is a cross-sectional view of a light emitting device according to another preferred embodiment of the present invention; FIG. 3A is a flow chart of a method for fabricating a light emitting device according to a preferred embodiment of the present invention; FIG. 3B is a preferred embodiment of the present invention; FIG. 3C is a flow chart of a method for fabricating a light-emitting device according to another preferred embodiment of the present invention; FIG. 4A to FIG. 4F are respectively a light-emitting device according to a preferred embodiment of the present invention; FIG. 5A to FIG. 5C are respectively schematic diagrams showing a manufacturing process of a light-emitting device according to another preferred embodiment of the present invention.

2‧‧‧Lighting device

21‧‧‧ epitaxial substrate

22‧‧‧ epitaxial structure

221‧‧‧First semiconductor layer

222‧‧‧ active layer

223‧‧‧Second semiconductor layer

23‧‧‧reflective layer

231‧‧‧ side wall

232‧‧‧ top surface

24‧‧‧First protective layer

25‧‧‧Second protective layer

26‧‧‧Barrier layer

27‧‧‧Insulation

P1‧‧‧first electrode

P2‧‧‧second electrode

Claims (16)

A light-emitting device includes: an epitaxial structure; a reflective layer disposed on the epitaxial structure; a first protective layer disposed on the reflective layer and the epitaxial structure and covering at least one of the reflective layers And a barrier layer disposed on the first protective layer and the epitaxial structure and completely covering the first protective layer, the barrier layer having a first electrode thereon. The illuminating device of claim 1, further comprising: an epitaxial substrate, the epitaxial structure, the reflective layer, the first protective layer and the barrier layer are disposed on the epitaxial substrate. The illuminating device of claim 1, wherein the epitaxial structure has a first semiconductor layer, an active layer and a second semiconductor layer, the active layer being sandwiched between the first semiconductor layer and the second Between the semiconductor layers. The illuminating device of claim 1, further comprising: a second protective layer disposed on a top surface of the reflective layer and interposed between the first protective layer and the reflective layer. The illuminating device of claim 1 or 4, further comprising: an insulating layer disposed on the barrier layer and the epitaxial structure. The illuminating device of claim 5, further comprising: a second electrode disposed on the first semiconductor layer of the epitaxial structure The first electrode and the second electrode are located on the same side of the epitaxial substrate. The illuminating device of claim 1 or 4, further comprising: a bonding layer disposed on the barrier layer. The illuminating device of claim 7, further comprising: a thermally conductive substrate disposed on the bonding layer, the thermally conductive substrate being the first electrode. The illuminating device of claim 8, further comprising: an electrode layer disposed on a surface of the epitaxial structure away from the reflective layer. A method for fabricating a light-emitting device, comprising: forming an epitaxial structure on an epitaxial substrate; forming a reflective layer on the epitaxial structure; forming a first protective layer on the reflective layer and the epitaxial structure, wherein The first protective layer covers at least one sidewall of the reflective layer; and a barrier layer is formed on the first protective layer and the epitaxial structure, wherein the barrier layer completely covers the first protective layer. The manufacturing method of claim 10, further comprising: forming a second protective layer on a top surface of the reflective layer and sandwiching between the first protective layer and the reflective layer. The manufacturing method of claim 10 or 11, further comprising: forming an insulating layer on the barrier layer and the epitaxial structure. The manufacturing method of claim 12, further comprising: forming a first electrode over the barrier layer; and forming a second electrode on the first semiconductor layer of the epitaxial structure, wherein the The first electrode and the second electrode are located on the same side of the epitaxial substrate. The manufacturing method of claim 10, further comprising: forming a first bonding layer on the barrier layer; forming a second bonding layer on a thermally conductive substrate; and transmitting the first The bonding layer and the second bonding layer bond the thermally conductive substrate over the barrier layer. The manufacturing method of claim 14, further comprising: removing the epitaxial substrate. The manufacturing method of claim 15, further comprising: forming an electrode layer on the surface of the epitaxial structure away from the reflective layer.