TW201408980A - Boiling cooling device - Google Patents

Boiling cooling device Download PDF

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Publication number
TW201408980A
TW201408980A TW102124307A TW102124307A TW201408980A TW 201408980 A TW201408980 A TW 201408980A TW 102124307 A TW102124307 A TW 102124307A TW 102124307 A TW102124307 A TW 102124307A TW 201408980 A TW201408980 A TW 201408980A
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Taiwan
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refrigerant
cooling device
heat
boiling
liquid
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TW102124307A
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Chinese (zh)
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Haruhiko Ohta
Hiroyuki Kobayashi
Nobuo Ohtani
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Univ Kyushu Nat Univ Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/04Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
    • F28D15/043Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure forming loops, e.g. capillary pumped loops
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427Cooling by change of state, e.g. use of heat pipes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention provides an ebullient cooling device which achieves a high critical heat flux and is operable at a high pressure and a low temperature. Provided is an ebullient cooling device that comprises a closed chamber (10) which is provided with, at the bottom thereof, a heating part (11) to which heat from a heat source (3) is transmitted, and in which a refrigerant is sealed, and that cools the heat source (3) by transmitting the heat from the heating part (11) to the refrigerant. In the closed chamber (10), a first refrigerant and a second refrigerant that is insoluble in the first refrigerant are sealed, and in a state before the heat source (3) generates heat, the first refrigerant (21) in a liquid state, the second refrigerant (22) in a liquid state, and mixed vapor (23) containing the first refrigerant in a gas state and the second refrigerant in a gas state are present in the closed chamber (10).

Description

沸騰冷卻裝置 Boiling cooling device

本發明係關於利用沸騰現象對機器加以冷卻之沸騰冷卻裝置。 The present invention relates to a boiling cooling device for cooling a machine by boiling.

隨著近年來半導體技術之發展,半導體元件之發熱密度急劇增加。因而謀求冷卻性能較高之冷卻裝置。因此,由例如專利文獻1等已知有使冷媒沸騰,而利用沸騰現象輸送熱之沸騰冷卻裝置。沸騰冷卻裝置因伴隨冷媒之相變化所致之蒸發熱輸送,而具有較高冷卻性能。 With the development of semiconductor technology in recent years, the heat density of semiconductor elements has dramatically increased. Therefore, a cooling device having a high cooling performance is sought. For example, a boiling cooling device that uses a boiling phenomenon to transfer heat by boiling a refrigerant is known, for example, from Patent Document 1. The boiling cooling device has high cooling performance due to the evaporation heat transfer caused by the phase change of the refrigerant.

〔先前技術文獻〕 [Previous Technical Literature]

〔專利文獻〕 [Patent Document]

〔專利文獻1〕日本國專利特開2011-21789號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2011-21789

若熱源將過大之熱通量賦予如上所述之沸騰冷卻裝置之加熱部,則會引起冷媒之膜沸騰,致使加熱部燒毀。將發生此燒毀之熱通量稱為臨界熱通量。沸騰冷卻裝置係在將該臨界熱通量以下之熱通量傳遞至加熱部之環境下使用。 If the heat source supplies an excessive heat flux to the heating portion of the boiling cooling device as described above, the film of the refrigerant is boiled, causing the heating portion to burn. The heat flux at which this burnout occurs is referred to as the critical heat flux. The boiling cooling device is used in an environment where the heat flux below the critical heat flux is transmitted to the heating portion.

一般而言,雖然於沸騰冷卻裝置中已進行提高該臨界熱通量之嘗試,但因長期使用之經時變化仍成為問題,而為缺乏可靠性者。因此,難以用於發熱量較大之熱源之冷卻。 In general, although an attempt to increase the critical heat flux has been carried out in a boiling cooling device, the change over time due to long-term use is still a problem, and it is a lack of reliability. Therefore, it is difficult to use for cooling of a heat source that generates a large amount of heat.

此外,在使用純水作為沸騰冷卻裝置之冷媒之情形時,因純水之沸點於大氣壓下為100℃,且為避免因混入空氣而阻礙冷卻系統之散熱而至少於大氣壓以上使沸騰冷卻裝置作動,故沸騰冷卻裝置係利用加熱部在100℃以上之溫度之沸騰現象進行冷卻。如此,作動溫度為100℃以上之沸騰冷卻裝置無法用於例如熱源為具有未達100℃之耐熱溫度之半導體元件之冷卻。因此,為了亦能夠對耐熱溫度較低之熱源進行冷卻,而謀求一面保持於大氣壓以上,一面可以較低溫度發揮原本之冷卻性能之沸騰冷卻裝置。 Further, in the case where pure water is used as the refrigerant of the boiling cooling device, the boiling point of the pure water is 100 ° C at atmospheric pressure, and the boiling cooling device is operated at least above atmospheric pressure in order to prevent the heat of the cooling system from being impeded by the incorporation of air. Therefore, the boiling cooling device is cooled by the boiling phenomenon of the heating portion at a temperature of 100 ° C or higher. Thus, a boiling cooling device having an operating temperature of 100 ° C or higher cannot be used, for example, for cooling of a semiconductor element having a heat resistant temperature of less than 100 ° C. Therefore, in order to cool the heat source having a low heat-resistant temperature, it is possible to maintain the boiling cooling device capable of exhibiting the original cooling performance at a lower temperature while maintaining the pressure at or above atmospheric pressure.

是以本發明之目的在於提供一種臨界熱通量較高,且可於高壓力或低溫度下進行動作之沸騰冷卻裝置。 It is an object of the present invention to provide a boiling cooling device which has a high critical heat flux and can operate at high pressure or low temperature.

根據本發明,可提供一種沸騰冷卻裝置,其係於下部具備傳遞來自熱源之熱之加熱部,且具有於內部封入有冷媒之密閉腔室,並藉由自上述加熱部向上述冷媒傳遞熱而對熱源進行冷卻之沸騰冷卻裝置;且上述密閉腔室中封入有第一冷媒、及與上述第一冷媒互不溶解之第二冷媒;在熱源產生熱之前之狀態下,上述密閉腔室內,存在有液體的上述第一冷媒、液體的上述第二冷媒、及包含氣體的上述第一冷媒與氣體的上述第二冷媒之混合蒸汽。 According to the present invention, there is provided a boiling cooling device which is provided with a heating portion for transmitting heat from a heat source at a lower portion, and has a sealed chamber in which a refrigerant is sealed inside, and transfers heat to the refrigerant from the heating portion. a boiling cooling device for cooling the heat source; wherein the sealed chamber is sealed with a first refrigerant and a second refrigerant that is insoluble with the first refrigerant; and in the state before the heat source generates heat, the sealed chamber exists The second refrigerant having a liquid, the second refrigerant of the liquid, and the mixed vapor of the first refrigerant containing the gas and the second refrigerant of the gas.

如上述本發明之沸騰冷卻裝置,其中上述第二冷媒具有較上述第一冷媒更高之沸點及更低之密度;且在熱源產生熱之前之狀態下,液體的上述第一冷媒之體積可較液體的上述第二冷媒之體積小。 The boiling cooling device of the present invention, wherein the second refrigerant has a higher boiling point and a lower density than the first refrigerant; and the volume of the first refrigerant of the liquid can be compared in a state before the heat source generates heat. The volume of the second refrigerant of the liquid is small.

如上述本發明之沸騰冷卻裝置,其中在熱源產生熱之前之狀態下,上述加熱部至液體的上述第一冷媒之液面之厚度可為10mm以 下。 In the above-described boiling cooling device of the present invention, the liquid level of the first refrigerant of the heating portion to the liquid may be 10 mm in a state before the heat is generated by the heat source. under.

如上述本發明之沸騰冷卻裝置,其中上述密閉腔室可具有隔離壁,其係在上述密閉腔室內之溫度低於上述第一冷媒之沸點之狀態下,於上述加熱部之上方維持一定量之液體的上述第一冷媒。 In the above-described boiling cooling device of the present invention, the sealed chamber may have a partition wall that maintains a certain amount above the heating portion in a state where the temperature in the sealed chamber is lower than the boiling point of the first refrigerant. The first refrigerant of the liquid described above.

如上述本發明之沸騰冷卻裝置,其中上述第二冷媒可具有較上述第一冷媒更高之沸點及更高之密度。 In the above-described boiling cooling device of the present invention, the second refrigerant may have a higher boiling point and a higher density than the first refrigerant.

如上述本發明之沸騰冷卻裝置,其中上述第二冷媒可為水。 In the above-described boiling cooling device of the present invention, the second refrigerant may be water.

如上述本發明之沸騰冷卻裝置,其中上述密閉腔室可具有凝結部,其係與散熱部熱連接,且使氣體的上述第一冷媒及氣體的上述第二冷媒凝結回液體。 In the above-described boiling cooling device according to the present invention, the sealed chamber may have a condensing portion that is thermally connected to the heat radiating portion, and condenses the first refrigerant of the gas and the second refrigerant of the gas back to the liquid.

如上述本發明之沸騰冷卻裝置,其中上述密閉腔室可具有:氣體輸送路徑,其係將被上述加熱部加熱而由液體汽化成氣體之上述第一冷媒及上述第二冷媒輸送至上述凝結部;及液體回送路徑,其係將於上述凝結部由氣體凝結回液體之上述第一冷媒及上述第二冷媒送回上述加熱部。 In the above-described boiling cooling device of the present invention, the sealed chamber may have a gas transport path that transports the first refrigerant and the second refrigerant heated by the heating portion to a gas to the condensation portion. And a liquid return path for returning the first refrigerant and the second refrigerant, which are condensed by the gas to the liquid in the condensation portion, back to the heating portion.

如上述本發明之沸騰冷卻裝置,其中可具備:冷卻部,其係經由輸送路徑而與上述密閉腔室連接,且將上述第一冷媒及上述第二冷媒之熱散熱至外部;及泵,其係將冷卻後之上述第一冷媒及上述第二冷媒送回上述密閉腔室。 The boiling cooling device according to the present invention may further include: a cooling unit that is connected to the sealed chamber via a transport path, and that dissipates heat of the first refrigerant and the second refrigerant to the outside; and a pump The cooled first refrigerant and the second refrigerant are returned to the sealed chamber.

如上述本發明之沸騰冷卻裝置,其中上述密閉腔室可具有氣泡捕集器,其係朝向下方開口,且在發熱體之加熱前後,於其內部保持一定量之氣體的上述第一冷媒及氣體的上述第二冷媒。 In the above-described boiling cooling device of the present invention, the sealed chamber may have a bubble trap which is open toward the lower side and maintains a certain amount of gas in the first refrigerant and gas before and after heating of the heating element. The above second refrigerant.

如上述本發明之沸騰冷卻裝置,其中被上述冷卻部冷卻之第一冷媒及第二冷媒可不通過氣液分離器而被送入泵。 In the above-described boiling cooling device according to the present invention, the first refrigerant and the second refrigerant cooled by the cooling unit can be sent to the pump without passing through the gas-liquid separator.

如上述本發明之沸騰冷卻裝置,其中上述加熱部之上表面可以 朝向作用於熱源之加速方向之相反側而變高之方式予以傾斜。 A boiling cooling device according to the present invention, wherein the upper surface of the heating portion is It is inclined so as to become higher toward the opposite side to the acceleration direction of the heat source.

本發明之沸騰冷卻裝置中,因第一冷媒與第二冷媒彼此不溶解,故包含氣體的第一冷媒與氣體的第二冷媒之混合蒸汽之壓力作用於液體的第一冷媒與液體的第二冷媒。即,若著眼於第一冷媒或第二冷媒之一者,則除了對於密閉腔室內之溫度之一冷媒之飽和蒸汽壓以外,亦作用另一冷媒之飽和蒸汽壓。因此,在成為第一冷媒與第二冷媒之飽和蒸汽壓之和的密閉腔室內之壓力下,於該密閉腔室之內部之平衡溫度,第一冷媒及第二冷媒皆成為各自之飽和溫度以下,且第一冷媒及第二冷媒均為過冷狀態。由於過冷度越大,臨界熱通量變得越高,故可獲得臨界熱通量較高之沸騰冷卻裝置。 In the boiling cooling device of the present invention, since the first refrigerant and the second refrigerant do not dissolve each other, the pressure of the mixed vapor of the first refrigerant containing the gas and the second refrigerant of the gas acts on the first refrigerant of the liquid and the second of the liquid. Refrigerant. That is, if one of the first refrigerant or the second refrigerant is focused on, the saturated vapor pressure of the other refrigerant acts in addition to the saturated vapor pressure of the refrigerant which is one of the temperatures in the closed chamber. Therefore, under the pressure in the sealed chamber which is the sum of the saturated vapor pressures of the first refrigerant and the second refrigerant, the first refrigerant and the second refrigerant are below the respective saturation temperatures at the equilibrium temperature inside the sealed chamber. And the first refrigerant and the second refrigerant are both in a supercooled state. Since the degree of supercooling is higher, the critical heat flux becomes higher, so that a boiling cooling device having a higher critical heat flux can be obtained.

又,由於對第一冷媒及第二冷媒作用有其各自之飽和蒸汽壓以上之壓力,故第一冷媒之分壓及第二冷媒之分壓均比密閉腔室之總壓要低,且該等分壓加算後等於總壓。因此,與僅以第一冷媒或第二冷媒之一者之冷媒填充密閉腔室之情形相比,且若認為腔室內壓力固定,則第一冷媒或第二冷媒可於更低溫度沸騰。藉此,冷媒或發熱部可於更低溫度下之原本冷卻性能使沸騰冷卻裝置作動。此外,由於同時固定冷媒溫度之情形時,可以更高之壓力進行動作,故不會發生因大氣混入而使產生之蒸汽凝結時之阻礙,從而可提升冷卻系統之長時間動作之可靠性。 Moreover, since the pressure of the first refrigerant and the second refrigerant are equal to or higher than the respective saturated vapor pressures, the partial pressure of the first refrigerant and the partial pressure of the second refrigerant are both lower than the total pressure of the sealed chamber, and the After the equal pressure is added, it is equal to the total pressure. Therefore, the first refrigerant or the second refrigerant can boil at a lower temperature than when the sealed chamber is filled with only one of the first refrigerant or the second refrigerant, and if the pressure in the chamber is considered to be fixed. Thereby, the refrigerant or the heat generating portion can activate the boiling cooling device at the original cooling performance at a lower temperature. Further, since the temperature of the refrigerant is fixed at the same time, the operation can be performed at a higher pressure, so that the steam generated by the incorporation of air does not hinder the condensation, and the reliability of the long-term operation of the cooling system can be improved.

1‧‧‧沸騰冷卻裝置 1‧‧‧Boiling cooling device

2‧‧‧電路基板 2‧‧‧ circuit board

3‧‧‧熱源 3‧‧‧heat source

4‧‧‧散熱器 4‧‧‧ radiator

10‧‧‧密閉腔室 10‧‧‧Closed chamber

11‧‧‧加熱部 11‧‧‧ heating department

12‧‧‧凝結部 12‧‧‧Condensation

13‧‧‧側壁 13‧‧‧ side wall

14‧‧‧氣體輸送路徑 14‧‧‧ gas transport path

15‧‧‧液體回送路徑 15‧‧‧ Liquid return path

16‧‧‧氣泡捕集器 16‧‧‧ bubble trap

17‧‧‧隔離壁 17‧‧‧ partition wall

21‧‧‧液體之第一冷媒 21‧‧‧ The first refrigerant of liquid

22‧‧‧液體之第二冷媒 22‧‧‧Second refrigerant of liquid

23‧‧‧氣相 23‧‧‧ gas phase

24‧‧‧第一冷媒之氣泡 24‧‧‧The first refrigerant bubble

25‧‧‧第二冷媒之氣泡 25‧‧‧second refrigerant bubble

26‧‧‧第一冷媒之液滴 26‧‧‧The first refrigerant droplet

30‧‧‧散熱器 30‧‧‧ radiator

40‧‧‧氣液分離裝置 40‧‧‧ gas-liquid separation device

50‧‧‧泵 50‧‧‧ pump

60‧‧‧導管 60‧‧‧ catheter

P1‧‧‧飽和蒸汽壓 P1‧‧‧saturated vapor pressure

P2‧‧‧飽和蒸汽壓 P2‧‧‧saturated vapor pressure

Pt‧‧‧總壓 Pt‧‧‧ total pressure

q‧‧‧熱通量 q‧‧‧Heat flux

S‧‧‧密閉空間 S‧‧‧Confined space

T1‧‧‧溫度 T1‧‧‧ temperature

T2‧‧‧溫度 T2‧‧‧ temperature

Tt‧‧‧溫度 Tt‧‧‧ temperature

Tw‧‧‧溫度 Tw‧‧‧temperature

圖1係本發明之實施形態之沸騰冷卻裝置之剖視圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a boiling cooling device according to an embodiment of the present invention.

圖2係說明冷媒處於壓縮狀態下之圖。 Figure 2 is a diagram illustrating the refrigerant in a compressed state.

圖3係說明冷媒處於過冷狀態下之圖。 Fig. 3 is a view showing the state in which the refrigerant is in a supercooled state.

圖4(a)-(d)係顯示圖1所示之沸騰冷卻裝置中,使加熱部之溫度上升時之第一冷媒及第二冷媒之行為變化之圖。 4(a) to 4(d) are diagrams showing changes in behavior of the first refrigerant and the second refrigerant when the temperature of the heating portion is increased in the boiling cooling device shown in Fig. 1.

圖5係顯示熱源之溫度Tw與熱通量q之關係之模式圖。 Fig. 5 is a schematic view showing the relationship between the temperature Tw of the heat source and the heat flux q.

圖6係說明過衝現象之模式圖。 Fig. 6 is a schematic view showing the overshoot phenomenon.

圖7係顯示加熱部與介質之溫度差△Tb與熱通量q之關係。 Fig. 7 is a graph showing the relationship between the temperature difference ΔTb between the heating portion and the medium and the heat flux q.

圖8係顯示熱源之溫度Tw與熱通量q之關係。 Fig. 8 shows the relationship between the temperature Tw of the heat source and the heat flux q.

圖9係顯示將本實施形態之沸騰冷卻裝置應用於蒸汽室之例之模式圖。 Fig. 9 is a schematic view showing an example in which the boiling cooling device of the embodiment is applied to a steam chamber.

圖10係顯示將本實施形態之沸騰冷卻裝置應用於熱管之例之模式圖。 Fig. 10 is a schematic view showing an example in which the boiling cooling device of the embodiment is applied to a heat pipe.

圖11係顯示對作用有加速度之熱源應用本實施形態之沸騰冷卻裝置之例之模式圖。 Fig. 11 is a schematic view showing an example in which the boiling cooling device of the embodiment is applied to a heat source to which acceleration is applied.

圖12係顯示包含泵之沸騰冷卻裝置之模式圖。 Figure 12 is a schematic view showing a boiling cooling device including a pump.

圖13係顯示如圖12所示之沸騰冷卻裝置之變化例之模式圖。 Fig. 13 is a schematic view showing a variation of the boiling cooling device shown in Fig. 12.

圖14係顯示如圖12所示之沸騰冷卻裝置之變化例之模式圖。 Fig. 14 is a schematic view showing a variation of the boiling cooling device shown in Fig. 12.

以下,一面參照圖式一面對本發明之沸騰冷卻裝置之實施形態之例進行說明。 Hereinafter, an embodiment of the boiling cooling device of the present invention will be described with reference to the drawings.

<沸騰冷卻裝置之構造> <Configuration of boiling cooling device>

圖1係本實施形態之沸騰冷卻裝置1之剖視圖。沸騰冷卻裝置1係搭載於熱源3上。圖示之例中,熱源3係搭載於電路基板2上之半導體元件。沸騰冷卻裝置1藉由自熱源3奪取熱,最終高效地將熱量散發至大氣中,從而冷卻熱源3。 Fig. 1 is a cross-sectional view showing a boiling cooling device 1 of the present embodiment. The boiling cooling device 1 is mounted on the heat source 3. In the illustrated example, the heat source 3 is a semiconductor element mounted on the circuit board 2. The boiling cooling device 1 cools the heat source 3 by taking heat from the heat source 3 and finally efficiently dissipating heat to the atmosphere.

沸騰冷卻裝置1包含密閉腔室10。密閉腔室10可由不鏽鋼或鋁等之金屬材料形成。密閉腔室10包含:加熱部11,其設置於底面;凝結部12,其設置於上面;及側壁13,其連接加熱部11與凝結部12。 The boiling cooling device 1 comprises a closed chamber 10. The hermetic chamber 10 may be formed of a metal material such as stainless steel or aluminum. The sealed chamber 10 includes a heating portion 11 that is disposed on the bottom surface, a condensation portion 12 that is disposed on the upper surface, and a side wall 13 that connects the heating portion 11 and the condensation portion 12.

加熱部11以與熱源3連接之方式而設置,且將來自熱源3之熱傳遞至密閉腔室10之下部。凝結部12係與設置在密閉腔室10之上部之散熱 器4連接,且與散熱器4熱連接。作為散熱器4,除圖示之散熱片外,亦可採用包含空氣冷卻風扇者或水冷式者。 The heating portion 11 is provided in connection with the heat source 3, and transfers heat from the heat source 3 to the lower portion of the sealed chamber 10. The condensation portion 12 and the heat dissipation disposed on the upper portion of the sealed chamber 10 The device 4 is connected and thermally connected to the heat sink 4. As the heat sink 4, in addition to the heat sink shown, an air cooling fan or a water-cooled type may be used.

於密閉腔室10之內部設置有密閉空間S。該密閉空間S內封入有第一冷媒與第二冷媒。在熱源3發熱前之狀態下,於密閉空間S內,存在有:第一液層21,其包含液體的第一冷媒;第二液層22,其包含液體的第二冷媒;及氣層23,其包含含有氣體的第一冷媒與氣體的第二冷媒之混合蒸汽。第一冷媒與第二冷媒係適當選擇於沸騰冷卻裝置1之動作溫度範圍內彼此不溶解之物質。以下說明中,尤其在不對第一冷媒與第二冷媒進行區別稱呼之情形時,亦將第一冷媒與第二冷媒稱為冷媒。 A sealed space S is provided inside the sealed chamber 10. The first refrigerant and the second refrigerant are sealed in the sealed space S. In a state before the heat source 3 is heated, in the sealed space S, there is a first liquid layer 21 containing a liquid first refrigerant, a second liquid layer 22 containing a liquid second refrigerant, and a gas layer 23 It comprises a mixed vapor of a first refrigerant containing a gas and a second refrigerant of a gas. The first refrigerant and the second refrigerant are appropriately selected from substances which are insoluble in each other within the operating temperature range of the boiling cooling device 1. In the following description, especially when the first refrigerant and the second refrigerant are not referred to separately, the first refrigerant and the second refrigerant are also referred to as refrigerant.

本實施形態中,作為一例之第一冷媒,係使用低沸點高密度介質之全氟碳FLUORINERT FC72(沸點:56[℃]、密度:1.68[g/mm3]),且做為第二冷媒係使用高沸點低密度介質之純水(沸點:100[℃]、密度:1.00[g/mm3])。又,第一冷媒之封入量,係對於高度100mm之密閉空間S,以使密閉空間S之底面至第一液層21之液面之距離(第一液層21之層厚度)為5mm之方式予以設定。第二冷媒之封入量係以使第一液層21之液面至第二液層22之液面之距離(第二液層22之厚度)為95mm之方式予以設定。 In the present embodiment, as the first refrigerant, a perfluorocarbon FLUORINERT FC72 (boiling point: 56 [° C.], density: 1.68 [g/mm 3 ]) of a low boiling point high density medium is used, and as a second refrigerant. Pure water of high boiling point low density medium (boiling point: 100 [° C], density: 1.00 [g/mm 3 ]). Further, the amount of the first refrigerant to be sealed is such that the distance from the bottom surface of the sealed space S to the liquid surface of the first liquid layer 21 (the layer thickness of the first liquid layer 21) is 5 mm in the sealed space S having a height of 100 mm. Set it up. The amount of the second refrigerant to be sealed is set such that the distance from the liquid surface of the first liquid layer 21 to the liquid surface of the second liquid layer 22 (the thickness of the second liquid layer 22) is 95 mm.

<自壓縮及過冷狀態> <Self-compressed and super-cooled state>

為便於理解以上述方式構成之沸騰冷卻裝置1之動作原理,首先對自壓縮及過冷度之概念進行說明。圖2係說明第一冷媒及第二冷媒處於壓縮狀態下之圖。圖3係說明第一冷媒及第二冷媒處於過冷狀態下之圖。圖2、3中,橫軸為密閉空間S內之溫度,縱軸為密閉空間S內之壓力。又,圖2、3中之A係表示第一冷媒之飽和蒸汽壓曲線,B係表示第二冷媒之飽和蒸汽壓曲線。又,圖中之黑圓圈係表示密閉空間S內之某狀態下之壓力與溫度。 In order to facilitate understanding of the principle of operation of the boiling cooling device 1 constructed as described above, the concept of self-compression and undercooling is first described. Fig. 2 is a view showing the first refrigerant and the second refrigerant in a compressed state. Fig. 3 is a view showing the first refrigerant and the second refrigerant in a supercooled state. In Figs. 2 and 3, the horizontal axis represents the temperature in the sealed space S, and the vertical axis represents the pressure in the sealed space S. Further, in Figs. 2 and 3, A represents a saturated vapor pressure curve of the first refrigerant, and B represents a saturated vapor pressure curve of the second refrigerant. Further, the black circles in the figure indicate the pressure and temperature in a certain state in the sealed space S.

在熱源3產生熱前之狀態下,密閉腔室10之內部成大致相同之一定溫度(平衡溫度)。該狀態中,第一冷媒之一部分及第二冷媒之一部分蒸發,且於第一液層21及第二液層22之上方形成氣層23。於密閉空間S之內部,於第一液層21、第二液層22及氣層23之間成熱平衡狀態。亦即如圖2所示,於該溫度(平衡溫度)Tt,第一冷媒之飽和蒸汽壓P1與第二冷媒之飽和蒸汽壓P2之和為密閉空間S內之總壓Pt=P1+P2。另,第一冷媒與第二冷媒各自之分壓P1、P2之和成為密閉空間S內之總壓Pt。 In a state before the heat source 3 generates heat, the inside of the sealed chamber 10 is formed at substantially the same constant temperature (equilibrium temperature). In this state, one of the first refrigerant and one of the second refrigerant partially evaporate, and a gas layer 23 is formed above the first liquid layer 21 and the second liquid layer 22. Inside the sealed space S, a state of thermal equilibrium is established between the first liquid layer 21, the second liquid layer 22, and the gas layer 23. That is, as shown in Fig. 2, at this temperature (equilibrium temperature) Tt, the sum of the saturated vapor pressure P1 of the first refrigerant and the saturated vapor pressure P2 of the second refrigerant is the total pressure Pt = P1 + P2 in the sealed space S. Further, the sum of the partial pressures P1 and P2 of the first refrigerant and the second refrigerant becomes the total pressure Pt in the sealed space S.

這意味著在著眼於第一冷媒之情形時,密閉空間S內之第一冷媒上,除第一冷媒之飽和蒸汽壓P1外,還作用有第二冷媒之飽和蒸汽壓P2。同樣若著眼於第二冷媒,則密閉空間S內之第二冷媒上,除第二冷媒之飽和蒸汽壓P2外,還作用有第一冷媒之飽和蒸汽壓P1。即,密閉空間S內之第一冷媒及第二冷媒均作用有較對於平衡溫度Tt之各飽和蒸汽壓P1、P2更高之壓力Pt,且可以說第一冷媒及第二冷媒處於壓縮狀態。將此種藉由於密閉空間S內封入彼此不溶解之兩種冷媒,從而對各者之冷媒作用有較密閉空間S之溫度所對應之飽和蒸汽壓更高之壓力之情形稱為自壓縮。 This means that in the case of focusing on the first refrigerant, the first refrigerant in the sealed space S acts on the saturated vapor pressure P2 of the second refrigerant in addition to the saturated vapor pressure P1 of the first refrigerant. Similarly, if attention is paid to the second refrigerant, the second refrigerant in the sealed space S acts on the saturated vapor pressure P1 of the first refrigerant in addition to the saturated vapor pressure P2 of the second refrigerant. That is, both the first refrigerant and the second refrigerant in the sealed space S have a higher pressure Pt than the saturated vapor pressures P1 and P2 of the equilibrium temperature Tt, and it can be said that the first refrigerant and the second refrigerant are in a compressed state. Such a situation in which the two refrigerants which are insoluble in each other are sealed in the sealed space S, and the refrigerant having a higher pressure than the saturated vapor pressure corresponding to the temperature of the sealed space S acts as a self-compression.

又若依據不同之見解,則如圖3所示,與密閉空間S內之總壓Pt所對應之第一冷媒之飽和溫度T1相比,密閉空間S內之第一冷媒之溫度Tt變得更低。同樣,與密閉空間S內之總壓Pt所對應之第二冷媒之飽和溫度T2相比,密閉空間S內之第二冷媒之溫度Tt變得更低。如此,第一冷媒及第二冷媒處於過冷狀態(Subcool)。 Further, according to different opinions, as shown in FIG. 3, the temperature Tt of the first refrigerant in the sealed space S becomes larger than the saturation temperature T1 of the first refrigerant corresponding to the total pressure Pt in the sealed space S. low. Similarly, the temperature Tt of the second refrigerant in the sealed space S becomes lower than the saturation temperature T2 of the second refrigerant corresponding to the total pressure Pt in the sealed space S. Thus, the first refrigerant and the second refrigerant are in a subcooling state (Subcool).

將此處總壓Pt所對應之第一冷媒之溫度T1與密閉空間S內之溫度Tt之差(T1-Tt)、及此處總壓Pt所對應之第二冷媒之溫度T2與密閉空間S內之溫度Tt之差(T2-Tt)稱為過冷度[K]。過冷度表示該冷媒之過冷狀態之程度大小之指標。如圖3所示,具有較第一冷媒之沸點更高之沸 點之第二冷媒係設定有較大之過冷度。 The difference (T1-Tt) between the temperature T1 of the first refrigerant corresponding to the total pressure Pt and the temperature Tt in the sealed space S, and the temperature T2 of the second refrigerant corresponding to the total pressure Pt here and the sealed space S The difference in temperature Tt (T2-Tt) is called undercooling [K]. The degree of subcooling indicates an indicator of the degree of the supercooled state of the refrigerant. As shown in FIG. 3, the boiling point is higher than the boiling point of the first refrigerant. The second refrigerant in the point is set to have a large degree of subcooling.

<沸騰冷卻裝置之動作> <Action of boiling cooling device>

繼而使用圖4及圖5,對圖1所示之沸騰冷卻裝置1之動作進行說明。 Next, the operation of the boiling cooling device 1 shown in Fig. 1 will be described with reference to Figs. 4 and 5 .

沸騰冷卻裝置1係藉由將熱源3所產生之熱經由第一冷媒及第二冷媒傳遞至散熱器4側,從而冷卻熱源3。更詳言之,如圖4(a)至(d)所示,依據熱通量,熱量之傳遞方式發生變化。 The boiling cooling device 1 cools the heat source 3 by transferring the heat generated by the heat source 3 to the side of the radiator 4 via the first refrigerant and the second refrigerant. More specifically, as shown in Figs. 4(a) to (d), the heat transfer mode changes depending on the heat flux.

圖4係顯示在圖1所示之沸騰冷卻裝置1中,來自熱源3之熱通量上升時之第一冷媒及第二冷媒之行為變化之圖。 Fig. 4 is a view showing changes in behavior of the first refrigerant and the second refrigerant when the heat flux from the heat source 3 rises in the boiling cooling device 1 shown in Fig. 1.

圖5係顯示熱源3之溫度Tw〔K〕與沸騰冷卻裝置之傳遞熱通量q〔W/mm2〕之關係之模式圖。另圖5之A係顯示本實施形態之沸騰冷卻裝置1之熱通量q與熱源之溫度Tw之關係。圖5之B係顯示僅將FC72封入密閉空間之沸騰冷卻裝置之熱通量q與熱源之溫度Tw之關係。圖5之C係顯示僅將純水封入密閉空間之沸騰冷卻裝置之熱通量q與熱源之溫度Tw之關係。 Fig. 5 is a schematic view showing the relationship between the temperature Tw [K] of the heat source 3 and the transfer heat flux q [W/mm 2 ] of the boiling cooling device. Further, Fig. 5A shows the relationship between the heat flux q of the boiling cooling device 1 of the present embodiment and the temperature Tw of the heat source. B of Fig. 5 shows the relationship between the heat flux q of the boiling cooling device in which only the FC 72 is sealed in the closed space and the temperature Tw of the heat source. C of Fig. 5 shows the relationship between the heat flux q of the boiling cooling device in which only pure water is sealed in the closed space and the temperature Tw of the heat source.

(加熱部之溫度未達第一冷媒之沸點) (The temperature of the heating section does not reach the boiling point of the first refrigerant)

圖4(a)係顯示熱通量較小且加熱部11之溫度未達第一冷媒之沸點之狀態。 Fig. 4(a) shows a state in which the heat flux is small and the temperature of the heating portion 11 does not reach the boiling point of the first refrigerant.

來自熱源3之熱經由加熱部11傳遞至第一冷媒之第一液層21。於第一液層21之內部產生對流,且將熱量傳遞至第二液層22。再者藉由第二液層22所產生之對流,將熱傳遞至氣層23,進而由凝結部12將熱傳遞至散熱器4。另,第一冷媒與第二冷媒之密度接近之情形時,亦會使第一冷媒與第二冷媒一面混合一面發生對流。 The heat from the heat source 3 is transferred to the first liquid layer 21 of the first refrigerant via the heating portion 11. Convection is generated inside the first liquid layer 21, and heat is transferred to the second liquid layer 22. Further, by the convection generated by the second liquid layer 22, heat is transferred to the gas layer 23, and heat is transferred from the condensation portion 12 to the heat sink 4. Further, when the density of the first refrigerant and the second refrigerant are close to each other, convection occurs while the first refrigerant and the second refrigerant are mixed.

如此於如圖4(a)所示之狀態,藉由第一冷媒及第二冷媒產生對流,沸騰冷卻裝置1冷卻熱源3。圖5之區間(a)相當於圖4之(a)所示之狀態。 Thus, as shown in FIG. 4(a), convection is generated by the first refrigerant and the second refrigerant, and the boiling cooling device 1 cools the heat source 3. The section (a) of Fig. 5 corresponds to the state shown in (a) of Fig. 4 .

(熱通量在第一冷媒之沸騰開始熱通量以上,但未達第一冷媒之臨界熱通量) (The heat flux starts above the boiling flux of the first refrigerant, but does not reach the critical heat flux of the first refrigerant)

圖4之(b)係顯示加熱部11之溫度在第一冷媒之沸點以上,但未達第一冷媒之膜沸騰溫度之狀態。 (b) of FIG. 4 shows a state in which the temperature of the heating portion 11 is above the boiling point of the first refrigerant, but does not reach the film boiling temperature of the first refrigerant.

於該狀態,藉由來自加熱部11之熱,於第一液層21發生沸騰。沸騰且汽化為氣體之第一冷媒24係通過第二液層22到達氣層23,進而於凝結部12冷卻成液滴26,並回到液相。於凝結部12凝結成液體之第一冷媒之液滴26朝向加熱部11滴落,或由側壁13傳遞至加熱部11側,並匯入第一液層21。 In this state, boiling occurs in the first liquid layer 21 by the heat from the heating portion 11. The first refrigerant 24, which is boiled and vaporized as a gas, passes through the second liquid layer 22 to reach the gas layer 23, and is then cooled to the droplets 26 at the condensation portion 12 and returned to the liquid phase. The liquid droplet 26 of the first refrigerant condensed into a liquid in the condensing portion 12 is dropped toward the heating portion 11, or is transmitted from the side wall 13 to the heating portion 11 side, and is introduced into the first liquid layer 21.

如此於如圖4(b)所示之狀態,藉由令第一冷媒一面伴隨著液體與氣體之相變化一面於密閉空間S內循環,而使沸騰冷卻裝置1對熱源3進行冷卻。圖5之區間(b)相當於圖4(b)所示之狀態。 Thus, in the state shown in FIG. 4(b), the first cooling agent circulates in the sealed space S with the phase change of the liquid and the gas, and the boiling cooling device 1 cools the heat source 3. The section (b) of Fig. 5 corresponds to the state shown in Fig. 4(b).

如此,在本實施形態之沸騰冷卻裝置1中,若於密閉腔室10之下部加熱且汽化之第一冷媒24移動至上方,則到達設置於密閉腔室10之上部之凝結部12。而後,被凝結部12液化之第一冷媒藉由重力再度移動至下方之加熱部11。因此,不必設置泵等之使冷媒流動之裝置。 As described above, in the boiling cooling device 1 of the present embodiment, when the first refrigerant 24 heated and vaporized in the lower portion of the sealed chamber 10 is moved upward, the condensation portion 12 provided on the upper portion of the sealed chamber 10 is reached. Then, the first refrigerant liquefied by the condensation portion 12 is again moved by gravity to the heating portion 11 below. Therefore, it is not necessary to provide a device such as a pump that allows the refrigerant to flow.

(熱通量在第一冷媒之臨界熱通量以上,但未達第二冷媒之沸騰開始熱通量) (The heat flux is above the critical heat flux of the first refrigerant, but does not reach the boiling capacity of the second refrigerant to start the heat flux)

圖4(c)顯示熱通量在第一冷媒之臨界熱通量以上,但未達第二冷媒之沸騰開始熱通量之狀態。 Fig. 4(c) shows a state in which the heat flux is above the critical heat flux of the first refrigerant, but does not reach the boiling heat of the second refrigerant.

若因來自加熱部11之熱使第一冷媒產生膜沸騰,則第一液層21消失。而後,包含第二冷媒之第二液層22下降至第一液層21所占之空間,且第二液層22接觸加熱部11。藉由來自加熱部11之熱,於第二液層22發生對流。熱由第二液層22傳遞至氣層23,氣層23係利用對流熱傳遞而將熱傳遞至凝結部12。 When the film of the first refrigerant is boiled by the heat from the heating unit 11, the first liquid layer 21 disappears. Then, the second liquid layer 22 containing the second refrigerant drops to the space occupied by the first liquid layer 21, and the second liquid layer 22 contacts the heating portion 11. Convection occurs in the second liquid layer 22 by the heat from the heating portion 11. Heat is transferred from the second liquid layer 22 to the gas layer 23, which transfers heat to the condensation portion 12 by convective heat transfer.

如此於如圖4(c)所示之狀態,藉由第二液層22之對流熱傳遞、氣 層23之對流、及凝結熱傳遞,而使沸騰冷卻裝置1對熱源3進行冷卻。另,第一冷媒為氣體之狀態,且存於氣層23中,但藉由凝結而成為液滴26,並下降至第二冷媒中。圖5之區間(c)相當於圖4(c)所示之狀態。又,將此種僅燒毀第一冷媒之狀態稱為中間燒毀。 Thus, in the state shown in FIG. 4(c), the convective heat transfer and gas by the second liquid layer 22 The convection of the layer 23 and the heat transfer of the condensation cause the boiling cooling device 1 to cool the heat source 3. Further, the first refrigerant is in a gas state and is stored in the gas layer 23, but is condensed to become the droplets 26 and is lowered into the second refrigerant. The section (c) of Fig. 5 corresponds to the state shown in Fig. 4(c). Moreover, the state in which only the first refrigerant is burned is referred to as intermediate burnout.

又,若此時將第一液層21之層厚度設為10mm程度以下,則因第一液層21燒毀時,可使第二液層22確實地接觸加熱部,故較佳。更好係將第一液層21之層厚度設為5mm程度以下。 In addition, when the thickness of the layer of the first liquid layer 21 is not more than 10 mm, the second liquid layer 22 can be surely brought into contact with the heating portion when the first liquid layer 21 is burned, which is preferable. More preferably, the layer thickness of the first liquid layer 21 is set to be about 5 mm or less.

(熱通量為第二冷媒之沸騰開始熱通量以上,但未達第二冷媒之臨界熱通量) (The heat flux is above the boiling rate of the second refrigerant, but the critical heat flux of the second refrigerant is not reached)

圖4之(d)係顯示熱通量為第二冷媒之沸騰開始熱通量以上,但未達第二冷媒之臨界熱通量之狀態。 (d) of Fig. 4 shows a state in which the heat flux is above the boiling start heat flux of the second refrigerant but not to the critical heat flux of the second refrigerant.

於該狀態下,藉由來自加熱部11之熱而於第二液層22發生沸騰。沸騰且汽化之第二冷媒25上升,且被凝結部12冷卻並再度凝結回液體。於凝結部12中成液體之第二冷媒滴落至加熱部11,或由凝結部12傳遞經側壁13匯入加熱部11。 In this state, boiling occurs in the second liquid layer 22 by the heat from the heating portion 11. The second refrigerant 25 that has boiled and vaporized rises and is cooled by the condensation portion 12 and recondensed back to the liquid. The second refrigerant which is liquid in the condensing portion 12 is dropped onto the heating portion 11, or is transferred from the condensing portion 12 to the heating portion 11 via the side wall 13.

如此於如圖4(d)所示之狀態,藉由令第二冷媒伴隨著相變化而循環,而使沸騰冷卻裝置1對熱源3進行冷卻。另第一冷媒為氣體之狀態,且存在於氣層23中。圖5之區間(d)相當於圖4(d)所示之狀態。 Thus, in the state shown in FIG. 4(d), the boiling cooling device 1 cools the heat source 3 by circulating the second refrigerant along with the phase change. The first refrigerant is in the state of a gas and is present in the gas layer 23. The section (d) of Fig. 5 corresponds to the state shown in Fig. 4(d).

若熱通量在第二冷媒之臨界熱通量以上,則因第二冷媒產生膜沸騰,故無法穩定地冷卻熱源3。因而,本實施形態之沸騰冷卻裝置1係可穩定地冷卻熱源3直至第二冷媒中產生膜沸騰之熱通量。 If the heat flux is equal to or higher than the critical heat flux of the second refrigerant, the film is boiled by the second refrigerant, so that the heat source 3 cannot be stably cooled. Therefore, the boiling cooling device 1 of the present embodiment can stably cool the heat source 3 until the heat flux of the film boiling occurs in the second refrigerant.

<臨界熱通量> <critical heat flux>

一般而言,可應用沸騰冷卻裝置之熱通量之上限係由臨界熱通量決定。臨界熱通量係為使冷媒引起膜沸騰,於加熱部發生燒毀之熱通量。因而,臨界熱通量亦被稱作燒毀熱通量。 In general, the upper limit of the heat flux to which the boiling cooling device can be applied is determined by the critical heat flux. The critical heat flux is a heat flux that causes the film to boil and the heat is burned in the heating portion. Thus, the critical heat flux is also referred to as the burnt heat flux.

在圖1所示之沸騰冷卻裝置1中,以使用圖3說明之方式令第一冷 媒及第二冷媒均於過冷狀態下沸騰(亦稱為過冷沸騰)。因此,可應用沸騰冷卻裝置1之熱通量之上限係由過冷沸騰時之臨界熱通量決定。一般而言,過冷沸騰時之臨界熱通量係使用飽和沸騰時之臨界熱通量,以下述公式(1)予以表示。 In the boiling cooling device 1 shown in FIG. 1, the first cold is used in the manner described using FIG. Both the medium and the second refrigerant boil in a subcooled state (also known as subcooled boiling). Therefore, the upper limit of the heat flux to which the boiling cooling device 1 can be applied is determined by the critical heat flux at the time of subcooled boiling. In general, the critical heat flux at the time of supercooled boiling is the critical heat flux at the time of saturated boiling, and is expressed by the following formula (1).

qsub=(1+C△Tsub)qsat 公式(1) q sub =(1+C△T sub )q sat formula (1)

此處,qsub為過冷沸騰時之臨界熱通量〔W/m2〕,C為常數〔1/K〕,△Tsub為過冷度〔K〕,qsat為飽和沸騰時之臨界熱通量〔W/m2〕。 Here, q sub is the critical heat flux [W/m 2 ] at the time of supercooled boiling, C is a constant [1/K], ΔT sub is the degree of supercooling [K], and q sat is the critical value at the time of saturated boiling. Heat flux [W/m 2 ].

如此過冷沸騰時之臨界熱通量係冷媒之過冷度越大則變得越大。如圖3所示,因第一冷媒及第二冷媒均具有過冷度,故第一冷媒之臨界熱通量係與密閉空間S僅被第一冷媒填滿之情形相比變得較大。此外,第二冷媒之臨界熱通量係與密閉空間S僅被第二冷媒填滿之情形相比變得較大。 The critical heat flux when it is too cold and boiling is greater as the degree of subcooling of the refrigerant increases. As shown in FIG. 3, since both the first refrigerant and the second refrigerant have a degree of subcooling, the critical heat flux of the first refrigerant becomes larger than the case where the sealed space S is filled only by the first refrigerant. Further, the critical heat flux of the second refrigerant becomes larger than the case where the sealed space S is filled only by the second refrigerant.

因此,本實施形態之沸騰冷卻裝置1即使對具有較大熱通量之熱源加以應用,亦可穩定進行動作。 Therefore, the boiling cooling device 1 of the present embodiment can stably operate even when applied to a heat source having a large heat flux.

首先,本實施形態之沸騰冷卻裝置1係可以較第二冷媒發生膜沸騰之熱通量更低之熱通量持續進行動作。因該狀態之熱通量較第一冷媒之臨界熱通量要大,故與僅將第一冷媒封入密閉空間S之沸騰冷卻裝置相比,本實施形態之沸騰冷卻裝置可應用於產生較大熱通量之熱源。 First, the boiling cooling device 1 of the present embodiment can continue to operate with a lower heat flux than the second refrigerant generating film boiling heat. Since the heat flux in this state is larger than the critical heat flux of the first refrigerant, the boiling cooling device of the present embodiment can be applied to generate a larger one than the boiling cooling device in which only the first refrigerant is sealed in the sealed space S. Heat source of heat flux.

此外,如上所述之第二冷媒係成過冷狀態,且低沸點冷媒即第一冷媒產生之高蒸汽壓作用於第二冷媒,從而令第二冷媒之過冷度變大。因此,與僅將第二冷媒封入密閉空間S之沸騰冷卻裝置相比,臨界熱通量較大,本實施形態之沸騰冷卻裝置可應用於產生較大熱通量之熱源。 Further, as described above, the second refrigerant is in a supercooled state, and the low-boiling refrigerant, that is, the high vapor pressure generated by the first refrigerant acts on the second refrigerant, thereby increasing the degree of subcooling of the second refrigerant. Therefore, the critical heat flux is larger than that of the boiling cooling device in which only the second refrigerant is sealed in the sealed space S, and the boiling cooling device of the present embodiment can be applied to a heat source that generates a large heat flux.

<密閉空間內之壓力與溫度> <Pressure and temperature in a confined space>

如上所述,於密閉腔室10內封入彼此不溶解之第一冷媒與第二冷媒,且雙方成壓縮狀態。但因高沸點冷媒即第二冷媒之蒸汽壓較低,故低沸點冷媒即第一冷媒之過冷度保持為較小之值。因而,第一冷媒以較第二冷媒更高之密度在沸騰開始前之狀態下接觸熱源之狀態,與僅將第一冷媒封入密閉腔室之狀態(即,第一冷媒為飽和狀態之狀態)相比,幾乎未改變。 As described above, the first refrigerant and the second refrigerant which are not dissolved in each other are sealed in the sealed chamber 10, and both of them are in a compressed state. However, since the vapor pressure of the high-boiling refrigerant, that is, the second refrigerant, is low, the subcooling degree of the low-boiling refrigerant, that is, the first refrigerant, is kept to a small value. Therefore, the first refrigerant contacts the heat source at a higher density than the second refrigerant in a state before the boiling starts, and a state in which only the first refrigerant is sealed in the sealed chamber (that is, a state in which the first refrigerant is saturated). Compared to almost unchanged.

例如,密閉空間內僅封入純水之情形時,在將密閉空間之壓力設定成大氣壓之情形下,純水於100℃沸騰。因此,此種沸騰冷卻裝置之動作溫度在100℃附近,熱源之溫度在其以上。 For example, when only the pure water is sealed in the sealed space, the pure water is boiled at 100 ° C when the pressure of the closed space is set to atmospheric pressure. Therefore, the operating temperature of such a boiling cooling device is around 100 ° C, and the temperature of the heat source is above it.

另一方面,若考慮對懼熱,且耐熱溫度未達100℃之半導體元件等之冷卻使用沸騰冷卻裝置時,則必須將沸騰冷卻裝置之密閉空間之壓力設定在大氣壓以下。 On the other hand, when a boiling cooling device is used for cooling of a semiconductor element or the like having a heat-resistant temperature of less than 100 ° C, it is necessary to set the pressure of the sealed space of the boiling cooling device to be equal to or lower than atmospheric pressure.

但若密閉空間之壓力未達大氣壓,則有伴隨時間流逝,大氣侵入密閉空間之顧慮。若大氣侵入密閉空間內,則因大氣係作為不凝結氣體發揮作用,故凝結部12附近,第一冷媒及第二冷媒之分壓快速下降,且平衡溫度急遽下降。而後,因冷媒之溫度與密閉腔室10之外部之最終冷卻介質即大氣等之溫度差下降,故引起顯著之凝結阻礙。其結果致使密閉腔室10內之溫度升高,加熱部10與冷媒之溫度之差變小,從而變得無法冷卻。即,密閉空間之壓力升高,且沸騰冷卻裝置之動作溫度變高。 However, if the pressure in the confined space does not reach atmospheric pressure, there is a concern that the atmosphere invades the confined space with the passage of time. When the atmosphere intrudes into the sealed space, since the atmosphere acts as a non-condensable gas, the partial pressure of the first refrigerant and the second refrigerant rapidly decreases in the vicinity of the condensing portion 12, and the equilibrium temperature rapidly drops. Then, since the temperature difference between the temperature of the refrigerant and the final cooling medium outside the sealed chamber 10, that is, the atmosphere, etc., is lowered, significant condensation inhibition is caused. As a result, the temperature in the sealed chamber 10 rises, and the difference between the temperature of the heating portion 10 and the refrigerant becomes small, so that cooling cannot be achieved. That is, the pressure in the closed space is increased, and the operating temperature of the boiling cooling device becomes high.

如此於密閉空間內僅封入純水等一種冷媒之情形時,要同時實現防止經時劣化、及減低動作溫度較為困難。 When only one type of refrigerant such as pure water is sealed in a sealed space, it is difficult to simultaneously prevent deterioration over time and to reduce the operating temperature.

相對於此,依據將互不溶解之第一冷媒(例如FC72)與第二冷媒(例如純水)封入密閉腔室10之本實施形態之沸騰冷卻裝置,則即使在將密閉腔室10內部之壓力設定為大氣壓之情形時,亦如圖2所說明,純水之分壓未達到大氣壓。因此,在熱通量較高之情形下,可以未達 100℃之溫度使純水沸騰,且可將沸騰冷卻裝置1之動作溫度設在100℃以下。 On the other hand, according to the boiling cooling device of the present embodiment in which the first refrigerant (for example, FC72) and the second refrigerant (for example, pure water) which are insoluble in each other are sealed in the sealed chamber 10, even inside the sealed chamber 10 When the pressure is set to atmospheric pressure, as also illustrated in Fig. 2, the partial pressure of pure water does not reach atmospheric pressure. Therefore, in the case of a high heat flux, it may not be reached. The temperature of 100 ° C causes the pure water to boil, and the operating temperature of the boiling cooling device 1 can be set to 100 ° C or less.

實際上,由於自FC72沸騰之溫度開始,沸騰冷卻裝置1動作,且FC72之沸點亦同樣未達56℃,故該動作溫度變為約52℃。因此,即使將密閉腔室10之內部設定在大氣壓以上,亦可於熱通量之較廣範圍內,將沸騰冷卻裝置1之動作溫度或熱源3之溫度抑制為未達100℃。 In fact, since the boiling cooling device 1 is operated since the temperature at which the FC 72 is boiling, and the boiling point of the FC 72 is also less than 56 ° C, the operating temperature becomes about 52 ° C. Therefore, even if the inside of the sealed chamber 10 is set to be higher than atmospheric pressure, the operating temperature of the boiling cooling device 1 or the temperature of the heat source 3 can be suppressed to less than 100 ° C in a wide range of heat flux.

如此,根據本實施形態之沸騰冷卻裝置1,可將密閉空間S之壓力設在大氣壓以上,且一面防止經時劣化,一面降低沸騰冷卻裝置1之動作溫度,從而可對懼熱之熱源之冷卻應用沸騰冷卻裝置1。 As described above, according to the boiling cooling device 1 of the present embodiment, the pressure of the sealed space S can be set to be higher than the atmospheric pressure, and the operating temperature of the boiling cooling device 1 can be lowered while preventing deterioration over time, thereby cooling the heat source of the fear heat. A boiling cooling device 1 is applied.

另,上述說明中,例舉了將純水用做第二冷媒之例且予以說明,然而在將有機溶劑或醇類用作冷媒之情形時,亦可一面將密閉空間S之壓力設在大氣壓以上,一面將沸騰冷卻裝置1之動作溫度設定地較低。此外,針對近年提案之有耐熱性之GaN或SiC等之半導體之冷卻,亦可更提高壓力之設定,且將沸騰冷卻裝置1之動作溫度設定為100℃以上之溫度。 In the above description, an example in which pure water is used as the second refrigerant is exemplified. However, when an organic solvent or an alcohol is used as the refrigerant, the pressure of the sealed space S may be set to atmospheric pressure. As described above, the operating temperature of the boiling cooling device 1 is set to be low. In addition, in the cooling of semiconductors such as GaN or SiC which have been proposed to have heat resistance in recent years, the pressure setting can be further increased, and the operating temperature of the boiling cooling device 1 can be set to a temperature of 100 ° C or higher.

<熱源溫度之過衝現象> <Overshoot of heat source temperature>

圖6係顯示一般熱源之溫度與熱通量之關係之模式圖。一般於沸騰前後,熱源之溫度與熱通量之間係存在如圖6所示之滯後。 Figure 6 is a schematic diagram showing the relationship between the temperature of a general heat source and the heat flux. Generally, before and after boiling, there is a hysteresis between the temperature of the heat source and the heat flux as shown in FIG.

若使來自熱源之熱通量增加,則即使超過冷媒之沸點數十度以上,亦不會發生沸騰(圖6之a)。例如在冷媒成過冷狀態之情形、加熱部極其平滑之情形、低壓力下沸騰之情形、及傳遞熱源之熱的面積極小之情形等中,冷媒難以沸騰。如此,若冷媒未沸騰,則因冷卻能力較低之對流進行由熱源將熱傳遞至冷媒,故會造成熱源溫度暫時性變高。 When the heat flux from the heat source is increased, boiling does not occur even if the boiling point of the refrigerant exceeds several tens of degrees (a of Fig. 6). For example, in the case where the refrigerant is in a supercooled state, the case where the heating portion is extremely smooth, the case where the boiling is under a low pressure, and the case where the surface of the heat source is transferred is small, the refrigerant is hard to boil. As described above, when the refrigerant does not boil, the heat is transferred to the refrigerant by the heat source due to the convection having a low cooling capacity, so that the temperature of the heat source is temporarily increased.

另,與之相反,在減少熱源通往冷媒之熱通量之情形時,係按序消除沸騰氣泡,且由沸騰熱傳遞之狀態快速進行至對流熱傳遞之狀 態。因此,熱源溫度連續性下降(圖6之b)。 On the contrary, in the case of reducing the heat flux of the heat source to the refrigerant, the boiling bubbles are eliminated in order, and the state of boiling heat transfer rapidly proceeds to the convective heat transfer. state. Therefore, the temperature continuity of the heat source is lowered (b of Fig. 6).

如此,在使熱通量增大之情形與使之減少之情形時,熱源溫度與熱通量之間有滯後產生。熱通量增大時之熱源之溫度之暫時性激增被稱為熱源溫度之過衝現象。 Thus, there is a hysteresis between the heat source temperature and the heat flux when the heat flux is increased and reduced. The temporary increase in the temperature of the heat source when the heat flux is increased is called the overshoot of the heat source temperature.

此種過衝現象係常在第二冷媒之純水等之高沸點介質中被觀察到。相反,第一冷媒之FC72等之FLORINERT或氟利昂等之低沸點介質係因1個氣泡所含蒸發熱較小等之理由而易於沸騰,故難以產生過衝現象。 Such overshoot is often observed in high boiling media such as pure water of the second refrigerant. On the other hand, the low-boiling medium such as FLORINERT or Freon of FC72 of the first refrigerant is liable to boil because the evaporation heat of one bubble is small, and it is difficult to cause an overshoot phenomenon.

本實施形態之沸騰冷卻裝置1中,在如圖4(b)所示第一冷媒之密度較高並直接接觸熱源3而開始沸騰時,因第一冷媒為FC72等之低沸點介質,故過衝現象得以緩解。 In the boiling cooling device 1 of the present embodiment, when the density of the first refrigerant is high as shown in FIG. 4(b) and the heat source 3 is directly contacted to start boiling, the first refrigerant is a low-boiling medium such as FC72. The rush phenomenon is alleviated.

又因如圖4之(d)所示,在第二冷媒沸騰時,熱通量亦較高,故存於第二冷媒中之第一冷媒之氣泡容易使第二冷媒開始沸騰。因此,在第二冷媒之沸騰開始時,不會產生過衝。 Further, as shown in (d) of FIG. 4, when the second refrigerant is boiled, the heat flux is also high, so that the bubbles of the first refrigerant stored in the second refrigerant tend to cause the second refrigerant to start boiling. Therefore, no overshoot occurs when the boiling of the second refrigerant starts.

如此,本實施形態之沸騰冷卻裝置1中,難以產生過衝現象。例如如電動汽車之馬達或蓄電池等供給電力之電源半導體(逆變器),將本實施形態之沸騰冷卻裝置應用於突然發動時發熱量變動較大之熱源之冷卻時,電源半導體不會暫時性處於高溫,從而可穩定地持續進行動作。由於汽車之逆變器係在汽車發動時,重複出現來自熱源之發熱量激增之狀況,故沸騰冷卻裝置1亦適用於該汽車之逆變器之冷卻。 As described above, in the boiling cooling device 1 of the present embodiment, it is difficult to cause an overshoot phenomenon. For example, when a power supply semiconductor (inverter) that supplies electric power such as a motor of an electric vehicle or a battery is used, when the boiling cooling device of the present embodiment is applied to cooling of a heat source having a large amount of heat fluctuation during sudden start, the power semiconductor is not temporary. It is at a high temperature, so that it can continue to operate stably. Since the inverter of the automobile repeatedly generates a sudden increase in the amount of heat generated from the heat source when the vehicle is started, the boiling cooling device 1 is also suitable for the cooling of the inverter of the automobile.

<第一冷媒之層厚度> <Layer thickness of the first refrigerant>

其次,製作本實施形態之實施例之沸騰冷卻裝置1、及比較例1,2之沸騰冷卻裝置,且評估其特性。於密閉空間S之高度為200mm左右之密閉腔室10中,以下述比例封入冷媒。其中密閉空間之高度並非重要之數值。 Next, the boiling cooling device 1 of the embodiment of the present embodiment and the boiling cooling device of Comparative Examples 1 and 2 were produced, and the characteristics thereof were evaluated. In the sealed chamber 10 having a height of about 200 mm in the sealed space S, the refrigerant is sealed in the following ratio. The height of the enclosed space is not an important value.

(實施例) (Example)

以將作為第一冷媒之FC72之層厚度設為5mm、及作為第二冷媒之純水之層厚度設為95mm之方式封入密閉腔室10中。 The sealing chamber 10 was sealed so that the layer thickness of the FC72 as the first refrigerant was 5 mm and the layer thickness of the pure water as the second refrigerant was 95 mm.

(比較例1) (Comparative Example 1)

僅將層厚度為100mm之純水封入密閉腔室10中。 Only pure water having a layer thickness of 100 mm was enclosed in the closed chamber 10.

(比較例2) (Comparative Example 2)

僅將層厚度為100mm之FC72封入密閉腔室10中。 Only the FC 72 having a layer thickness of 100 mm was enclosed in the sealed chamber 10.

圖7係顯示加熱部11與密閉空間S之溫度差△Tb〔K〕、與沸騰冷卻裝置1之熱通量q〔W/m2〕之關係。圖8係顯示熱源3之溫度Tw〔K〕與沸騰冷卻裝置1之熱通量q〔W/m2〕之關係。 Fig. 7 shows the relationship between the temperature difference ΔTb [K] between the heating portion 11 and the sealed space S and the heat flux q [W/m 2 ] of the boiling cooling device 1. Fig. 8 shows the relationship between the temperature Tw [K] of the heat source 3 and the heat flux q [W/m 2 ] of the boiling cooling device 1.

圖7之水平虛線表示臨界熱通量值。如圖7所示,僅封入FC72之比較例2之臨界熱通量為僅封入純水之比較例1之臨界熱通量之1/4左右。第一冷媒即FC72加熱前之層厚度為5mm之情形時,實施例之臨界熱通量亦變得比比較例1之臨界熱通量要高。另,受限於實驗裝置,無法將熱通量設定成圖示之1.8×106〔W/m2〕以上之值,但實施例之沸騰冷卻裝置之臨界熱通量確實為2×106〔W/m2〕以上之值。即,根據本實施形態之沸騰冷卻裝置,確認可取得較高之臨界熱通量。此處重要的是加熱前之層厚度為5mm之情形下,於沸騰開始後至低熱通量時,第一冷媒發生沸騰,而於高熱通量時,自動變化至第二冷媒沸騰。 The horizontal dashed line in Figure 7 represents the critical heat flux value. As shown in Fig. 7, the critical heat flux of Comparative Example 2 in which only FC72 was sealed was about 1/4 of the critical heat flux of Comparative Example 1 in which only pure water was sealed. When the first refrigerant, that is, the layer thickness before the FC72 was heated, was 5 mm, the critical heat flux of the example also became higher than the critical heat flux of Comparative Example 1. Further, limited to the experimental apparatus, the heat flux cannot be set to a value of 1.8 × 10 6 [W/m 2 ] or more as shown, but the critical heat flux of the boiling cooling device of the embodiment is indeed 2 × 10 6 [W/m 2 ] The above values. That is, according to the boiling cooling device of the present embodiment, it was confirmed that a high critical heat flux can be obtained. What is important here is that in the case where the layer thickness before heating is 5 mm, the first refrigerant boils after the start of boiling to a low heat flux, and automatically changes to the second refrigerant boiling at a high heat flux.

即,沸騰開始階段中,難以產生熱源溫度之過衝的第一冷媒發生沸騰。 That is, in the boiling start phase, it is difficult for the first refrigerant which has an overshoot of the heat source temperature to boil.

再者,因第一冷媒之臨界熱通量較低,故若第一冷媒大半被蒸發,則自動切換成利用第二冷媒之對流熱傳遞。此種切換係基於原本臨界熱通量較低之第一冷媒之燒毀,且命名成中間燒毀。另,即使發生此種中間燒毀,沸騰冷卻裝置之冷卻作用亦未受任何負面影響。 Furthermore, since the critical heat flux of the first refrigerant is low, if the first refrigerant is mostly evaporated, it is automatically switched to convective heat transfer using the second refrigerant. This switching is based on the burning of the first refrigerant with a lower critical heat flux and is named intermediate burning. In addition, even if such intermediate burnout occurs, the cooling effect of the boiling cooling device is not adversely affected.

該情形時,為了自第一冷媒之沸騰自動順利切換成第二冷媒之 沸騰,較好將第一冷媒之層厚度設定得較小。另,中間燒毀時之熱通量與比較例2之臨界熱通量相比,有些許降低。若熱通量變大,則第二冷媒發生沸騰。因第二冷媒過冷度較大,故臨界熱通量與比較例1相比,有極大地提高。 In this case, in order to automatically switch from the boiling of the first refrigerant to the second refrigerant Boiling, it is preferred to set the layer thickness of the first refrigerant to be small. In addition, the heat flux during intermediate burning was slightly lower than that of Comparative Example 2. If the heat flux becomes large, the second refrigerant boils. Since the second refrigerant has a large degree of subcooling, the critical heat flux is greatly improved as compared with Comparative Example 1.

另,第一冷媒與第二冷媒相比密度較高之情形時,若第一液層21之厚度過大,則有由第一冷媒之沸騰變為第二冷媒之沸騰之切換無法順利進行之情形。例如,第一冷媒即FC72之液層之加熱前之厚度為10mm之情形時,該臨界熱通量為4×105〔W/m2〕,與比較例1之臨界熱通量相比要小得多。該係由於加熱前之FC72之層厚度過大,且於第二冷媒之純水中大量混入有臨界熱通量較低之第一冷媒之FC72。 When the density of the first refrigerant layer is higher than that of the second refrigerant, if the thickness of the first liquid layer 21 is too large, the switching from the boiling of the first refrigerant to the boiling of the second refrigerant may not proceed smoothly. . For example, when the thickness of the liquid layer of the first refrigerant, that is, FC72, is 10 mm before heating, the critical heat flux is 4 × 10 5 [W/m 2 ], which is comparable to the critical heat flux of Comparative Example 1. Much smaller. In this system, the thickness of the layer of FC72 before heating is excessively large, and the FC72 of the first refrigerant having a lower critical heat flux is mixed in a large amount in the pure water of the second refrigerant.

最佳之第一冷媒之層厚度係與冷媒雙方之物性或沸騰特性相關,將第一液層21之厚度設定為5mm前後較佳之結論係可由此後進行之多種液體組合而得以明確。無論何種冷媒之組合,第一冷媒為高密度之情形時,第一液層21之厚度均較好設定在10mm以下。 The layer thickness of the first preferred refrigerant is related to the physical properties or boiling characteristics of the refrigerant, and the conclusion that the thickness of the first liquid layer 21 is set to 5 mm is preferably determined by a combination of various liquids thereafter. Regardless of the combination of the refrigerants, when the first refrigerant is in a high density, the thickness of the first liquid layer 21 is preferably set to be 10 mm or less.

如圖8所示,實施例中之中間燒毀後之熱源之溫度Tw係變得較比較例1之溫度Tw要低。亦即熱源產生高熱通量之情形時,利用本實施形態之沸騰冷卻裝置,確認亦可將熱源維持在較低之溫度。 As shown in Fig. 8, the temperature Tw of the heat source after the middle burnout in the embodiment became lower than the temperature Tw of Comparative Example 1. In other words, when the heat source generates a high heat flux, it is confirmed that the heat source can be maintained at a lower temperature by the boiling cooling device of the present embodiment.

<冷媒之變化例> <Changes in refrigerants>

上述說明中,雖對作為第二冷媒,採用具有較第一冷媒沸點更高且密度更低之冷媒之例進行說明,但本發明並非限定於此。例如,作為第二冷媒,亦可採用具有較第一冷媒沸點更高且密度更高之冷媒。 In the above description, an example in which a refrigerant having a higher boiling point and a lower density than the first refrigerant is used as the second refrigerant will be described, but the present invention is not limited thereto. For example, as the second refrigerant, a refrigerant having a higher boiling point and a higher density than the first refrigerant may be used.

該情形時,因加熱前,第二冷媒位於第一冷媒之下方,故將熱源配置於下方之情形時,第二冷媒接觸加熱部11。因此,未產生如圖4(c)所示之中間燒毀。然而,由於第一冷媒及第二冷媒進行自壓縮, 且依據第一冷媒之高蒸汽壓,第二冷媒之過冷度被設定得較大,故可提供一種即使臨界熱通量較大且密閉空間之壓力較高,亦能於低溫下進行動作之沸騰冷卻裝置。 In this case, since the second refrigerant is located below the first refrigerant before heating, when the heat source is disposed below, the second refrigerant contacts the heating unit 11. Therefore, the intermediate burnout as shown in Fig. 4(c) is not produced. However, since the first refrigerant and the second refrigerant are self-compressing, According to the high vapor pressure of the first refrigerant, the degree of subcooling of the second refrigerant is set to be large, so that it is possible to operate at a low temperature even if the critical heat flux is large and the pressure in the closed space is high. Boiling cooling device.

又,上述例中雖對作為第一冷媒採用FC72且第二冷媒採用純水之例進行說明,但本發明並未限定於此。例如,採用Novec7100(註冊商標)(沸點61℃、密度1.52〔g/mm3〕)作為第一冷媒,且採用純水作為第二冷媒、或採用Novec649(註冊商標)(沸點49℃、密度1.60〔g/mm3〕)作為第一冷媒,且採用純水作為第二冷媒亦可。又或採用FC72作為第一冷媒,且採用醇類作為第二冷媒亦可。 Further, in the above example, an example in which FC72 is used as the first refrigerant and pure water is used as the second refrigerant is described, but the present invention is not limited thereto. For example, Novec 7100 (registered trademark) (boiling point 61 ° C, density 1.52 [g/mm 3 ]) is used as the first refrigerant, and pure water is used as the second refrigerant, or Novec 649 (registered trademark) (boiling point 49 ° C, density 1.60) is used. [g/mm 3 ]) may be used as the first refrigerant, and pure water may be used as the second refrigerant. Alternatively, FC72 may be used as the first refrigerant, and alcohol may be used as the second refrigerant.

可用於第一冷媒與第二冷媒之物質若為沸騰冷卻裝置之動作溫度之範圍內彼此不溶解之物質,則無特別限定。其中無關密度大小,將第一冷媒作為低沸點成分,將第二冷媒作為高沸點成分。但若第二冷媒使用純水,則因可以低成本實現沸騰冷卻裝置,故而較佳,且可期待高臨界熱通量(除熱能力)。 The substance which can be used for the first refrigerant and the second refrigerant is not particularly limited as long as it does not dissolve in the range of the operating temperature of the boiling cooling device. Among them, the first refrigerant has a low boiling point component and the second refrigerant has a high boiling point component. However, if the second refrigerant uses pure water, it is preferable because the boiling cooling device can be realized at a low cost, and a high critical heat flux (heat removal capacity) can be expected.

此外,雖對將2種冷媒封入密閉腔室10內之例進行說明,但封入3種以上之冷媒亦可,該情形時,若至少兩種冷媒彼此不溶解,則有獲得與上述相同效果之可能性。 Further, although an example in which two kinds of refrigerants are sealed in the sealed chamber 10 will be described, three or more kinds of refrigerants may be enclosed. In this case, if at least two types of refrigerants are not dissolved, the same effect as described above can be obtained. possibility.

<冷媒之封入量> <The amount of refrigerant enclosed>

另,為了使封入至密閉腔室10內之冷媒成為自壓縮狀態及過冷狀態,必須在熱源3產生熱量前之狀態中,藉由彼此不溶解之至少兩種彼此不溶解之冷媒來形成氣層23。雖然此通常於冷媒之封入時予以達成,但因沸騰開始時亦會達成,故斷然不會出現實現困難之狀況。形成氣層23之狀態中,下述公式(2)係成立。 Further, in order to allow the refrigerant enclosed in the sealed chamber 10 to be in a self-compressed state and a supercooled state, it is necessary to form a gas by at least two kinds of refrigerants which are insoluble in each other in a state in which heat is generated before the heat source 3 generates heat. Layer 23. Although this is usually achieved when the refrigerant is sealed, it will be achieved at the beginning of boiling, so there is no difficulty in achieving it. In the state in which the gas layer 23 is formed, the following formula (2) holds.

v”=hfg/(Tsat×(dP/dT))+v’ 公式(2) v”=h fg /(T sat ×(dP/dT))+v' formula (2)

此處,v”為蒸發之冷媒之比容積〔m3/kg〕、v’為液體狀態之冷媒之比容積〔m3/kg〕、 hfg為蒸發潛熱〔J/kg〕、Tsat為飽和溫度〔K〕、dP/dT為蒸汽壓曲線之梯度〔N/m2K〕。 Here, v" is the specific volume of the evaporated refrigerant [m 3 /kg], v' is the specific volume of the refrigerant in the liquid state [m 3 /kg], h fg is the latent heat of vaporization [J/kg], and T sat is The saturation temperature [K] and dP/dT are gradients of the vapor pressure curve [N/m 2 K].

由於液體之冷媒之比容積比蒸發之冷媒之比容積小得多,故公式(2)可視為下述公式(3)。 Since the specific volume of the liquid refrigerant is much smaller than the specific volume of the evaporated refrigerant, the formula (2) can be regarded as the following formula (3).

v”≒hfg/(Tsat×(dP/dT)) 公式(3) v”≒h fg /(T sat ×(dP/dT)) Formula (3)

公式(2)及公式(3)係可藉由使用平衡溫度中各者之物性,而適用於第一冷媒或第二冷媒。 Formula (2) and Formula (3) can be applied to the first refrigerant or the second refrigerant by using the physical properties of each of the equilibrium temperatures.

另一方面,第一冷媒之比容積v1係以下述公式(4)獲得。 On the other hand, the specific volume v 1 of the first refrigerant is obtained by the following formula (4).

v1=(V1+V0)/m1 公式(4) v 1 =(V 1 +V 0 )/m 1 Formula (4)

此處,m1為第一冷媒之封入重量〔kg〕、V1為熱源3發熱前之溫度下之液體的第一冷媒之體積〔m3〕、V0係熱源3發熱前之溫度下之氣體的第一冷媒與氣體的第二冷媒之體積〔m3〕。 Here, m 1 is the sealing weight [kg] of the first refrigerant, V 1 is the volume of the first refrigerant [m 3 ] of the liquid at the temperature before the heat source 3 is heated, and the temperature of the V 0 heat source 3 before the heat is generated. The volume of the first refrigerant of the gas and the second refrigerant of the gas [m 3 ].

如此,使用公式(3)與公式(4),第一冷媒之封入重量m1滿足下述公式(5),係對第二冷媒賦予最大之過冷度而使臨界熱通量增大所期望。但就算未滿足,本實施方法之沸騰熱傳遞特性於定性上亦相同。根據v1<v1”得出m1>(V1+V0)×Tsat,1×(dP/dT)1/hfg,1 公式(5) Thus, using the formula (3) and the formula (4), the encapsulation weight m 1 of the first refrigerant satisfies the following formula (5), which is the maximum subcooling degree given to the second refrigerant to increase the critical heat flux. . However, even if it is not satisfied, the boiling heat transfer characteristics of the present embodiment are qualitatively the same. According to v 1 <v 1 ”, m 1 >(V 1 +V 0 )×T sat,1 ×(dP/dT) 1 /h fg,1 formula (5)

附字1表示第一冷媒。 The word 1 indicates the first refrigerant.

此處將第一冷媒作為低沸點成分,且將第二冷媒作為高沸點成分而予以處理,但對於臨界熱通量之增大,較為有效的是對第二冷媒賦予較大之過冷度。 Here, the first refrigerant is treated as a low-boiling point component, and the second refrigerant is treated as a high-boiling point component. However, it is effective to increase the critical heat flux to a large degree of subcooling of the second refrigerant.

第一冷媒與第二冷媒各自之單成分之臨界熱通量不存在較大之差,且第一冷媒之密度高於第二冷媒之密度之情形時,將對第一冷媒賦予較大之過冷度,從而提升臨界熱通量之方法亦有效。該情形時, 期望滿足公式(6)以替代公式(5)。 When there is no large difference between the critical heat flux of the single component of the first refrigerant and the second refrigerant, and the density of the first refrigerant is higher than the density of the second refrigerant, the first refrigerant will be given a larger The method of cooling, thereby increasing the critical heat flux, is also effective. In this case, It is desirable to satisfy the formula (6) instead of the formula (5).

m2>(V2+V0)×Tsat,2×(dP/dT)2/hfg,2 公式(6) m 2 >(V 2 +V 0 )×T sat,2 ×(dP/dT) 2 /h fg,2Formula (6)

附字2表示第二冷媒。 Word 2 indicates the second refrigerant.

此處,m2為第二冷媒之封入重量〔kg〕、V2為熱源3發熱前之溫度下之液體的第二冷媒之體積〔m3〕、V0係熱源3發熱前之溫度下之氣體的第一冷媒與氣體的第二冷媒之體積〔m3〕。 Here, m 2 is the enclosed weight [kg] of the second refrigerant, V 2 is the volume of the second refrigerant [m 3 ] of the liquid at the temperature before the heat source 3 is heated, and the temperature of the V 0 -based heat source 3 before the heat is generated. The volume of the first refrigerant of the gas and the second refrigerant of the gas [m 3 ].

該方法中,第一冷媒之液層厚度必須足夠大,且第二冷媒之層厚度為了滿足公式(5)之關係而期望以不設置得極小之方式,對第一冷媒賦予最大限之過冷度。 In the method, the thickness of the liquid layer of the first refrigerant must be sufficiently large, and the layer thickness of the second refrigerant is desirably to be supercooled to the maximum amount of the first refrigerant in a manner not to be extremely small in order to satisfy the relationship of the formula (5). degree.

<具體應用> <Specific application>

以上所說明之沸騰冷卻裝置可應用於例如圖9所示之蒸汽室。 The boiling cooling device described above can be applied to, for example, the steam chamber shown in FIG.

(蒸汽室) (steam room)

圖9所示之蒸汽室係在對具有較大發熱量之較小熱源進行冷卻時較為合適之裝置。蒸汽室之密閉腔室10之上面及底面係形成為比熱源3之上面更大。蒸汽室可藉由將熱傳遞至對於較小熱源3為較大之散熱器4,而擴大散熱面積,從而有效地冷卻熱源。 The steam chamber shown in Fig. 9 is a suitable device for cooling a small heat source having a large amount of heat. The upper surface and the bottom surface of the sealed chamber 10 of the steam chamber are formed to be larger than the upper surface of the heat source 3. The steam chamber can expand the heat source by transferring heat to the heat sink 4 which is larger for the smaller heat source 3, thereby effectively cooling the heat source.

蒸汽室之密閉腔室10具有:氣體輸送路徑14、及液體回送路徑15。 The sealed chamber 10 of the steam chamber has a gas transport path 14 and a liquid return path 15.

設置於密閉空間S內部之氣體輸送路徑係以自熱源正上方沿左右方向擴展之方式而形成。由加熱部11所汽化之冷媒通過氣體輸送路徑14,移動至密閉腔室10之上面。此時,因氣體輸送路徑14係形成至比加熱部11於左右方向之更外側,故汽化之冷媒可移動至非位於熱源3正上方之部位之密閉腔室10之上面。 The gas transport path provided inside the sealed space S is formed to extend in the left-right direction from directly above the heat source. The refrigerant vaporized by the heating portion 11 passes through the gas delivery path 14 and moves to the upper surface of the sealed chamber 10. At this time, since the gas transport path 14 is formed outside the heating unit 11 in the left-right direction, the vaporized refrigerant can be moved to the upper surface of the sealed chamber 10 which is not located directly above the heat source 3.

熱於蒸汽室內移動時,於氣體輸送路徑14中並無必要有溫度差之方面為蒸汽室之一大特徵。在蒸汽室內部設置為相同溫度,且與本 發明不同,將單成分或共溶性之混合冷媒填充至蒸汽室內之情形時,蒸汽室內部變為飽和溫度。然而,因本實施例中使用非共溶性之混合冷媒,故蒸汽室內部成為平衡溫度,且各冷媒一起處於過冷狀態,從而獲得已敘述之為數眾多之優異熱傳遞特性。 When moving hot in the steam chamber, it is not necessary to have a temperature difference in the gas transport path 14 as one of the characteristics of the steam chamber. Set to the same temperature inside the steam chamber, and with this Unlike the invention, when a single-component or co-soluble mixed refrigerant is filled into a steam chamber, the inside of the steam chamber becomes a saturation temperature. However, since the non-co-soluble mixed refrigerant is used in the present embodiment, the inside of the steam chamber becomes an equilibrium temperature, and each of the refrigerants is in a supercooled state, thereby obtaining a plurality of excellent heat transfer characteristics as described.

液體回送路徑15設置於密閉空間S之底面之全域。液體回送路徑15係將被非位於熱源3正上方之部位所液化之冷媒回送往加熱部11之路徑。液體回送路徑15例如可設為毛細結構芯(毛細管結構)。 The liquid return path 15 is disposed over the entire area of the bottom surface of the sealed space S. The liquid return path 15 is a path for returning the refrigerant liquefied by a portion not located directly above the heat source 3 to the heating unit 11. The liquid return path 15 can be, for example, a capillary structure core (capillary structure).

利用此種構成,蒸汽室可藉由將來自較小之熱源3之熱傳遞至大面積之散熱器4,而有效地冷卻較小之熱源。 With this configuration, the steam chamber can effectively cool the smaller heat source by transferring heat from the smaller heat source 3 to the large-area heat sink 4.

(熱管) (Heat pipe)

圖10係顯示應用本發明之熱管之一例之模式圖。熱管係將來自固定於熱源3之下部之熱傳遞至固定於散熱器4之上部。熱管亦具有:管狀之密閉腔室10;氣體回收路徑14,其係沿縱方向延伸至密閉腔室之中央部;及液體回送路徑15,其係沿密閉腔室10之內壁而設置於上下間。 Fig. 10 is a schematic view showing an example of a heat pipe to which the present invention is applied. The heat pipe transfers heat from the lower portion of the heat source 3 to the upper portion of the heat sink 4. The heat pipe also has a tubular closed chamber 10, a gas recovery path 14 extending in the longitudinal direction to a central portion of the closed chamber, and a liquid return path 15 disposed along the inner wall of the closed chamber 10 between.

根據此種構成,藉由熱源3而汽化之冷媒係經由氣體回送路徑14移動至上方。到達密閉腔室10之上部之冷媒藉由散熱器4凝結且化為液體。液化之冷媒藉由液體回送路徑15移動至下方。如此,熱管可高效地將來自熱源3之熱傳遞至散熱器4。 According to this configuration, the refrigerant vaporized by the heat source 3 is moved upward via the gas return path 14. The refrigerant reaching the upper portion of the sealed chamber 10 is condensed by the radiator 4 and turned into a liquid. The liquefied refrigerant is moved to the lower side by the liquid return path 15. As such, the heat pipe can efficiently transfer heat from the heat source 3 to the heat sink 4.

(作用有加速度之熱源之冷卻裝置) (cooling device acting on the heat source with acceleration)

本發明之沸騰冷卻裝置可用於藉由例如對供給至電動汽車之馬達或蓄電池等之電力進行控制之大型半導體等而構成之逆變器之冷卻。該逆變器係於加速時供給較大電力,且行進中亦頻繁地改變供給之電力量。此種發熱量變化較大之逆變器之冷卻亦較好使用如上所述之難以產生動作溫度之過衝現象之本發明之沸騰冷卻裝置。 The boiling cooling device of the present invention can be used for cooling of an inverter constituted by, for example, a large semiconductor that controls electric power supplied to a motor or a battery of an electric vehicle. The inverter supplies a large amount of electric power during acceleration, and also frequently changes the amount of electric power supplied during traveling. It is also preferable to use the boiling cooling device of the present invention which is difficult to generate an overshoot phenomenon of the operating temperature as described above for the cooling of the inverter having a large change in the amount of heat generation.

此外,該情形下,在電動汽車之加速時發熱量達到最大。因 此,以圖11所示針對車輛之行進方向而使後方變高之方式,令加熱部11形成於相對於水平面傾斜之面上亦可。圖11係顯示對作用有加速度之熱源應用本實施形態之沸騰冷卻裝置之例之模式圖。如圖所示,加熱部11之上表面較好以對於加速之方向之相反側變高之方式傾斜。藉此,如圖11所示,即使在車輛加速時,亦可使冷媒持續接觸加熱部11。 In addition, in this case, the amount of heat generation is maximized when the electric vehicle is accelerated. because Therefore, the heating portion 11 may be formed on the surface inclined with respect to the horizontal plane so as to increase the rearward direction with respect to the traveling direction of the vehicle as shown in FIG. Fig. 11 is a schematic view showing an example in which the boiling cooling device of the embodiment is applied to a heat source to which acceleration is applied. As shown in the figure, the upper surface of the heating portion 11 is preferably inclined such that the opposite side to the direction of acceleration becomes higher. Thereby, as shown in FIG. 11, the refrigerant can be continuously brought into contact with the heating portion 11 even when the vehicle is accelerating.

<對伴隨強制流動之沸騰冷卻裝置之應用> <Application to boiling cooling device with forced flow>

又,上述實施形態中,雖對未使冷媒主動流動之裝置加以說明,但本發明亦可應用於使冷媒強制性流動之冷卻裝置。圖12係顯示對具備使冷媒流動之泵之冷卻裝置應用本發明之例之模式圖。 Further, in the above embodiment, the device in which the refrigerant is not actively flown is described. However, the present invention is also applicable to a cooling device that forcibly flows the refrigerant. Fig. 12 is a schematic view showing an example in which the present invention is applied to a cooling device including a pump for flowing a refrigerant.

如圖12所示之沸騰冷卻裝置係具備:密閉腔室10,其搭載於熱源3上;散熱器30;氣液分離裝置40;泵50;及導管60,其係連接該等。冷媒利用泵50而驅動,於密閉腔室10、散熱器30、氣液分離裝置40、泵50內循環。 The boiling cooling device shown in Fig. 12 includes a sealed chamber 10 mounted on a heat source 3, a radiator 30, a gas-liquid separation device 40, a pump 50, and a conduit 60 connected thereto. The refrigerant is driven by the pump 50 and circulated in the sealed chamber 10, the radiator 30, the gas-liquid separation device 40, and the pump 50.

於密閉腔室10之上部設置有出口,該出口經由導管60連接於散熱器30。散熱器30係對經由導管60而輸送之冷媒進行冷卻。氣液分離裝置40係將由散熱器30冷卻之冷媒分離成氣體與液體,且僅將液體送往泵50。 An outlet is provided above the sealed chamber 10, and the outlet is connected to the heat sink 30 via a conduit 60. The radiator 30 cools the refrigerant conveyed through the duct 60. The gas-liquid separation device 40 separates the refrigerant cooled by the radiator 30 into a gas and a liquid, and sends only the liquid to the pump 50.

此種構成之沸騰冷卻裝置中,於密閉腔室10之內部,封入有與上述相同之彼此不溶解之第一冷媒與第二冷媒。以下說明中,對與上述實施形態相同使用FC72作為第一冷媒,且使用純水作為第二冷媒之例進行說明。 In the boiling cooling device of such a configuration, the first refrigerant and the second refrigerant which are not dissolved in the same manner as described above are sealed inside the sealed chamber 10. In the following description, an example in which FC72 is used as the first refrigerant and pure water is used as the second refrigerant is used in the same manner as in the above embodiment.

若自熱源3傳遞熱,則FC72與純水一起沸騰。此時,高沸點介質即純水之過冷度較大,低沸點介質即FC72之過冷度較小。因此,沸騰且汽化之純水因周圍過冷度較大之純水而快速液化,但FC72以氣體狀態,經由設置於密閉腔室10之上部之出口而移動至散熱器30。散 熱器30對FC72進行冷卻。 If heat is transferred from the heat source 3, the FC72 boils together with the pure water. At this time, the super-cooling degree of the high-boiling medium, that is, pure water is large, and the sub-cooling degree of the low-boiling medium, that is, FC72 is small. Therefore, the boiled and vaporized pure water is rapidly liquefied by the pure water having a large degree of supercooling around, but the FC 72 is moved to the radiator 30 via the outlet provided at the upper portion of the sealed chamber 10 in a gaseous state. Scatter The heater 30 cools the FC 72.

由散熱器30所液化之FC72及未被液化之FC72一起流入氣液分離裝置40。於氣液分離裝置40將FC72分離成氣體與液體。接著僅液體之FC72經由泵50再次被送入密閉腔室10。 The FC 72 liquefied by the radiator 30 and the FC 72 not liquefied flow into the gas-liquid separation device 40 together. The FC72 is separated into a gas and a liquid by the gas-liquid separation device 40. The liquid-only FC 72 is then fed again into the closed chamber 10 via the pump 50.

藉由如此使FC72循環,使沸騰冷卻裝置對熱源3進行冷卻。 By circulating the FC 72 in this manner, the boiling cooling device cools the heat source 3.

藉由如此利用泵50使冷媒流動,可將散熱器30設置於遠離密閉腔室10之位置,即使在未直接將散熱器30設置於密閉腔室10之上部之情形時,亦可應用本發明。此外,因藉由泵50使冷媒流動,故氣泡不易積存於加熱部11上,且可抑制膜沸騰發生,並進而可提高臨界熱通量。 By thus flowing the refrigerant by the pump 50 as described above, the heat sink 30 can be disposed at a position away from the sealed chamber 10, and the present invention can be applied even when the heat sink 30 is not directly disposed on the upper portion of the sealed chamber 10. . Further, since the refrigerant flows through the pump 50, bubbles are less likely to accumulate on the heating portion 11, and film boiling can be suppressed, and the critical heat flux can be further increased.

另,因第二冷媒設定為較大之過冷度,故該氣泡25(蒸汽)發生後容易立即於第一液層21或第二液層22中凝結而消失。相對與此,由於第一冷媒過冷度設定為較小,故該氣泡24(蒸汽)因凝結僅縮小若干體積,且被運往下游,並於散熱器30再次被凝結。 Further, since the second refrigerant is set to have a large degree of subcooling, it is easy to immediately condense and disappear in the first liquid layer 21 or the second liquid layer 22 after the bubble 25 (steam) is generated. In contrast to this, since the first refrigerant subcooling is set to be small, the bubble 24 (steam) is reduced by a few volumes due to condensation, and is transported downstream, and is again condensed in the radiator 30.

然而,依據第一冷媒與第二冷媒之選擇,兩種冷媒可同時設定為特定以上之過冷度。該情形時,可令兩種冷媒所發生之蒸汽24、25均於密閉腔室10之內部予以凝結。此種情形下,若設置如圖13所示之氣泡捕集器16,則容易藉由自壓縮確保兩種冷媒之過冷度。 However, depending on the selection of the first refrigerant and the second refrigerant, the two refrigerants can be simultaneously set to a specific degree of subcooling. In this case, the steam 24, 25 generated by the two kinds of refrigerants can be condensed inside the sealed chamber 10. In this case, if the bubble trap 16 shown in Fig. 13 is provided, it is easy to ensure the degree of subcooling of the two refrigerants by self-compression.

圖13係為了維持密閉腔室10內之壓縮狀態,而於密閉腔室10內設置氣泡捕集器16之例。氣泡捕集器16係於密閉空間S內形成朝下方開口之空間。 FIG. 13 shows an example in which the bubble trap 16 is provided in the sealed chamber 10 in order to maintain the compressed state in the sealed chamber 10. The bubble trap 16 is formed in a space in the sealed space S to open downward.

藉由氣泡捕集器16,於密閉腔室10內產生之蒸汽24、25係立即凝結,從而可避免密閉腔室10內之壓力升高、或冷媒過冷度減少致使臨界熱通量之增大效果降低。氣泡捕集器16之隔板期望為有隔熱性者,較好係不使蒸汽24、25於氣泡捕集器16內輕易凝結。 By the bubble trap 16, the steam 24, 25 generated in the sealed chamber 10 is immediately condensed, thereby avoiding an increase in pressure in the closed chamber 10 or a decrease in the degree of subcooling of the refrigerant, resulting in an increase in critical heat flux. The big effect is reduced. The separator of the bubble trap 16 is desirably heat-insulating, and it is preferred that the steam 24, 25 is not easily condensed in the bubble trap 16.

如此,若採用在本實施形態之沸騰冷卻裝置之作動壓力下飽和 蒸汽壓曲線所示之飽和溫度附近之第一冷媒及第二冷媒,則加熱部11附近產生之兩種冷媒之氣泡24,25一起被周圍之冷媒冷卻而再次液化。藉此,散熱器30內同時流入有液體的第一冷媒及第二冷媒。由於散熱器30時常流出液體的第一冷媒及液體的第二冷媒,故不必於泵50上游側設置氣液分離裝置40,從而可省略圖13所示之氣液分離裝置40。 Thus, if it is saturated under the operating pressure of the boiling cooling device of the present embodiment When the first refrigerant and the second refrigerant in the vicinity of the saturation temperature indicated by the vapor pressure curve, the two kinds of refrigerant bubbles 24 and 25 generated in the vicinity of the heating portion 11 are cooled together by the surrounding refrigerant to be liquefied again. Thereby, the first refrigerant and the second refrigerant having the liquid are simultaneously introduced into the radiator 30. Since the radiator 30 constantly flows out of the liquid first refrigerant and the liquid second refrigerant, it is not necessary to provide the gas-liquid separator 40 on the upstream side of the pump 50, and the gas-liquid separator 40 shown in Fig. 13 can be omitted.

若如此選擇好第一冷媒及第二冷媒,且同樣對兩種冷卻液體施加特定以上之過冷度,則加熱部11產生之兩種冷媒之氣泡(蒸汽)立即凝結且停留於密閉腔室10內部,從而亦可廢置氣液分離器40,並使圖12所示之冷媒循環之環路,除密閉腔室10之內部構造以外,可應用與現在廣泛使用之液體冷卻相同者。 If the first refrigerant and the second refrigerant are selected in this way, and the specific supercooling degree is applied to the two cooling liquids, the bubbles (steam) of the two kinds of refrigerant generated by the heating portion 11 immediately condense and stay in the closed chamber 10 Internally, the gas-liquid separator 40 can also be disposed of, and the loop of the refrigerant circulation shown in Fig. 12 can be applied in the same manner as the liquid cooling which is widely used now, except for the internal structure of the sealed chamber 10.

然而,如圖13所示之冷卻裝置係使用既有之單相冷媒之強制對流冷卻裝置之構成者。即,若設法進行第一冷媒與第二冷媒之選擇,則可挪用既有之強制對流冷卻裝置而構成。其係可顯著地使利用強制流動系統之沸騰冷卻之應用變得容易,且挪用既有之裝置,可以低成本之改良來飛躍性地提高冷卻性能。再者,由於伴隨循環流量之降低,泵動力之降低係變得可能,而可推進節能化,故而極為有用。 However, the cooling device shown in Fig. 13 is constructed using a forced convection cooling device of the existing single-phase refrigerant. That is, if the selection of the first refrigerant and the second refrigerant is sought, the existing forced convection cooling device can be used. This makes it possible to significantly facilitate the application of boiling cooling using a forced flow system, and to divert the existing device, and to improve the cooling performance drastically at a low cost. Further, since the reduction in the pumping flow rate is accompanied by a decrease in the circulating flow rate, it is extremely useful to promote energy saving.

此外,連接泵50與密閉腔室10之導管較好以使冷媒朝向加熱部11之方式安裝於密閉腔室10之下部。藉此,因可強制排除發生氣泡,故可抑制膜沸騰發生,且可進而提高臨界熱通量。 Further, the conduit connecting the pump 50 and the sealed chamber 10 is preferably attached to the lower portion of the sealed chamber 10 so that the refrigerant faces the heating portion 11. Thereby, since the occurrence of bubbles can be forcibly excluded, film boiling can be suppressed, and the critical heat flux can be further increased.

又,在密閉腔室並非係如圖12或圖13所示之縱長者,而是為橫長者之情形時,為防止因泵50而產生之流動使第一冷媒自加熱部11之終端流過,亦可如圖14所示,自密閉腔室10之底面沿垂直方向設置隔離壁17。圖14係顯示具備橫長之密閉腔室10之沸騰冷卻裝置之模式圖。藉由隔離壁17,於加熱部11之正上方保持有特定量之第一液層。 Further, in the case where the sealed chamber is not a vertically long person as shown in Fig. 12 or Fig. 13, but is a horizontally long person, the flow of the first refrigerant from the end of the heating portion 11 is prevented in order to prevent the flow due to the pump 50. Alternatively, as shown in FIG. 14, the partition wall 17 is provided in the vertical direction from the bottom surface of the sealed chamber 10. Fig. 14 is a schematic view showing a boiling cooling device having a horizontally long sealed chamber 10. A certain amount of the first liquid layer is held directly above the heating portion 11 by the partition wall 17.

以上,雖參照特定之實施態樣對本發明加以詳細說明,但,熟 知本技藝者當明瞭在未脫離本發明之精神與範圍內可進行多種變更或修正。 Hereinabove, the present invention has been described in detail with reference to specific embodiments, but It is apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention.

本申請案基於2012年7月6日申請之美國臨時專利申請61/668733,其內容係作為參照而援用於此。 The present application is based on U.S. Provisional Patent Application Serial No. 61/668, filed on Jul.

〔產業上之可利用性〕 [Industrial Applicability]

根據本發明之一態樣,提供一種臨界熱通量較高,可在高壓且低溫下進行動作之沸騰冷卻裝置。 According to an aspect of the present invention, a boiling cooling device which has a high critical heat flux and can operate at a high pressure and a low temperature is provided.

1‧‧‧沸騰冷卻裝置 1‧‧‧Boiling cooling device

2‧‧‧電路基板 2‧‧‧ circuit board

3‧‧‧熱源 3‧‧‧heat source

4‧‧‧散熱器 4‧‧‧ radiator

10‧‧‧密閉腔室 10‧‧‧Closed chamber

11‧‧‧加熱部 11‧‧‧ heating department

12‧‧‧凝結部 12‧‧‧Condensation

13‧‧‧側壁 13‧‧‧ side wall

21‧‧‧液體的第一冷媒 21‧‧‧ Liquid first refrigerant

22‧‧‧液體的第二冷媒 22‧‧‧Liquid second refrigerant

23‧‧‧氣相 23‧‧‧ gas phase

S‧‧‧密閉空間 S‧‧‧Confined space

Claims (12)

一種沸騰冷卻裝置,其係於下部包含傳遞來自熱源之熱之加熱部,且具有於內部封入了冷媒之密閉腔室,並藉由自上述加熱部向上述冷媒傳遞熱而對熱源進行冷卻者;且上述密閉腔室中封入有第一冷媒、及與上述第一冷媒互不溶解之第二冷媒;在熱源產生熱之前之狀態下,上述密閉腔室內存在有液體的上述第一冷媒、液體的上述第二冷媒、及包含氣體的上述第一冷媒與氣體的上述第二冷媒之混合蒸汽。 A boiling cooling device is provided in a lower portion including a heating portion that transfers heat from a heat source, and has a sealed chamber in which a refrigerant is sealed inside, and cools the heat source by transferring heat from the heating portion to the refrigerant; a first refrigerant and a second refrigerant that is insoluble with the first refrigerant are sealed in the sealed chamber; and the first refrigerant and the liquid are present in the sealed chamber in a state before the heat is generated by the heat source. The second refrigerant and the mixed vapor of the first refrigerant containing the gas and the second refrigerant of the gas. 如請求項1之沸騰冷卻裝置,其中上述第二冷媒具有較上述第一冷媒更高之沸點及更低之密度;且在熱源產生熱之前之狀態下,液體的上述第一冷媒之體積小於液體的上述第二冷媒之體積。 The boiling cooling device of claim 1, wherein the second refrigerant has a higher boiling point and a lower density than the first refrigerant; and the volume of the first refrigerant of the liquid is smaller than the liquid in a state before the heat source generates heat. The volume of the above second refrigerant. 如請求項2之沸騰冷卻裝置,其中在熱源產生熱之前之狀態下,從上述加熱部至液體的上述第一冷媒之液面之厚度為10mm以下。 The boiling cooling device according to claim 2, wherein a thickness of the liquid surface of the first refrigerant from the heating portion to the liquid is 10 mm or less in a state before heat is generated by the heat source. 如請求項1至3中任一項之沸騰冷卻裝置,其中上述密閉腔室係包含隔離壁,其係在上述密閉腔室內之溫度低於上述第一冷媒之沸點之狀態下,於上述加熱部之上方維持一定量之液體的上述第一冷媒。 The boiling cooling device according to any one of claims 1 to 3, wherein the sealed chamber comprises a partition wall in a state in which the temperature in the sealed chamber is lower than a boiling point of the first refrigerant, in the heating portion The first refrigerant is maintained above a certain amount of liquid. 如請求項1之沸騰冷卻裝置,其中上述第二冷媒具有較上述第一冷媒更高之沸點及更高之密度。 The boiling cooling device of claim 1, wherein the second refrigerant has a higher boiling point and a higher density than the first refrigerant. 如請求項1至5中任一項之沸騰冷卻裝置,其中上述第二冷媒為水。 The boiling cooling device according to any one of claims 1 to 5, wherein the second refrigerant is water. 如請求項1至6中任一項之沸騰冷卻裝置,其中上述密閉腔室包 含凝結部,其係與散熱部熱連接,且使氣體的上述第一冷媒及氣體的上述第二冷媒凝結回液體。 A boiling cooling device according to any one of claims 1 to 6, wherein said sealed chamber package The condensed portion is thermally connected to the heat dissipating portion, and the second refrigerant of the gas and the second refrigerant of the gas are condensed back to the liquid. 如請求項7之沸騰冷卻裝置,其中上述密閉腔室包含:氣體輸送路徑,其係將被上述加熱部加熱而由液體汽化成氣體之上述第一冷媒及上述第二冷媒輸送至上述凝結部;及液體回送路徑,其係將於上述凝結部由氣體凝結回液體之上述第一冷媒及上述第二冷媒送回至上述加熱部。 The boiling cooling device of claim 7, wherein the sealed chamber comprises: a gas transport path, wherein the first refrigerant and the second refrigerant heated by the heating portion to be vaporized by the liquid are transported to the condensation portion; And a liquid returning path for returning the first refrigerant and the second refrigerant, which are condensed by the gas to the liquid in the condensing unit, to the heating unit. 如請求項1至6中任一項之沸騰冷卻裝置,其中包含:冷卻部,其係經由輸送路徑而與上述密閉腔室連接,且將上述第一冷媒及上述第二冷媒之熱散熱至外部;及泵,其係將冷卻後之上述第一冷媒及上述第二冷媒送回至上述密閉腔室。 The boiling cooling device according to any one of claims 1 to 6, further comprising: a cooling portion connected to the sealed chamber via a conveying path, and dissipating heat of the first refrigerant and the second refrigerant to the outside And a pump for returning the cooled first refrigerant and the second refrigerant to the sealed chamber. 如請求項9之沸騰冷卻裝置,其中上述密閉腔室包含氣泡捕集器,其係朝向下方開口,且在發熱體之加熱前後,於其內部保持一定量之氣體的上述第一冷媒及氣體的上述第二冷媒。 The boiling cooling device of claim 9, wherein the sealed chamber comprises a bubble trap which is open toward the lower side and maintains a certain amount of gas of the first refrigerant and gas inside and outside the heating element before and after heating of the heating element The second refrigerant described above. 如請求項10之沸騰冷卻裝置,其中被上述冷卻部冷卻後之第一冷媒及第二冷媒未經由氣液分離器而被送入泵。 The boiling cooling device according to claim 10, wherein the first refrigerant and the second refrigerant cooled by the cooling unit are not sent to the pump via the gas-liquid separator. 如請求項1至11中任一項之沸騰冷卻裝置,其中上述加熱部之上表面係以朝向作用於熱源之加速方向之相反側而變高之方式予以傾斜。 The boiling cooling device according to any one of claims 1 to 11, wherein the upper surface of the heating portion is inclined so as to become higher toward the opposite side of the acceleration direction acting on the heat source.
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