TW201401423A - 用於大直徑基板的靜電夾盤冷卻底座 - Google Patents

用於大直徑基板的靜電夾盤冷卻底座 Download PDF

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Publication number
TW201401423A
TW201401423A TW102114217A TW102114217A TW201401423A TW 201401423 A TW201401423 A TW 201401423A TW 102114217 A TW102114217 A TW 102114217A TW 102114217 A TW102114217 A TW 102114217A TW 201401423 A TW201401423 A TW 201401423A
Authority
TW
Taiwan
Prior art keywords
base
fluid passage
fluid
radial distance
cover
Prior art date
Application number
TW102114217A
Other languages
English (en)
Chinese (zh)
Inventor
Hamid Tavassoli
Kallol Bera
Douglas Buchberger
James C Carducci
Shahid Rauf
Kenneth Collins
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201401423A publication Critical patent/TW201401423A/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J15/00—Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23C—MILLING
    • B23C3/00—Milling particular work; Special milling operations; Machines therefor
    • B23C3/13—Surface milling of plates, sheets or strips
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/0006—Electron-beam welding or cutting specially adapted for particular articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T409/00—Gear cutting, milling, or planing
    • Y10T409/30—Milling
    • Y10T409/303752—Process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW102114217A 2012-04-25 2013-04-22 用於大直徑基板的靜電夾盤冷卻底座 TW201401423A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261638375P 2012-04-25 2012-04-25
US13/860,475 US20130284372A1 (en) 2012-04-25 2013-04-10 Esc cooling base for large diameter subsrates

Publications (1)

Publication Number Publication Date
TW201401423A true TW201401423A (zh) 2014-01-01

Family

ID=49476307

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102114217A TW201401423A (zh) 2012-04-25 2013-04-22 用於大直徑基板的靜電夾盤冷卻底座

Country Status (3)

Country Link
US (1) US20130284372A1 (fr)
TW (1) TW201401423A (fr)
WO (1) WO2013162938A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109473390A (zh) * 2018-08-27 2019-03-15 刘国家 一种静电吸盘
CN110214367A (zh) * 2017-01-16 2019-09-06 Ers电子有限公司 用于对衬底进行调温的设备和相对应的制造方法
TWI747104B (zh) * 2018-12-27 2021-11-21 大陸商中微半導體設備（上海）股份有限公司 能提高控溫精度的基板安裝台及電漿處理設備

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016099826A1 (fr) * 2014-12-19 2016-06-23 Applied Materials, Inc. Bague de bordure pour une chambre de traitement de substrat
US10497606B2 (en) * 2015-02-09 2019-12-03 Applied Materials, Inc. Dual-zone heater for plasma processing
US10586718B2 (en) * 2015-11-11 2020-03-10 Applied Materials, Inc. Cooling base with spiral channels for ESC
JP6918042B2 (ja) * 2019-03-26 2021-08-11 日本碍子株式会社 ウエハ載置装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6079356A (en) * 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6151203A (en) * 1998-12-14 2000-11-21 Applied Materials, Inc. Connectors for an electrostatic chuck and combination thereof
JP4644943B2 (ja) * 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
US6664738B2 (en) * 2002-02-27 2003-12-16 Hitachi, Ltd. Plasma processing apparatus
US6908512B2 (en) * 2002-09-20 2005-06-21 Blue29, Llc Temperature-controlled substrate holder for processing in fluids
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US20060105182A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Erosion resistant textured chamber surface
US7221553B2 (en) * 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7436645B2 (en) * 2004-10-07 2008-10-14 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20080035306A1 (en) * 2006-08-08 2008-02-14 White John M Heating and cooling of substrate support
US7649729B2 (en) * 2007-10-12 2010-01-19 Applied Materials, Inc. Electrostatic chuck assembly
US8287688B2 (en) * 2008-07-31 2012-10-16 Tokyo Electron Limited Substrate support for high throughput chemical treatment system
JP5705133B2 (ja) * 2009-02-04 2015-04-22 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 静電チャックシステムおよび基板表面に亘って温度プロファイルを半径方向に調整するための方法
KR101108337B1 (ko) * 2009-12-31 2012-01-25 주식회사 디엠에스 2단의 냉매 유로를 포함하는 정전척의 온도제어장치
US8608852B2 (en) * 2010-06-11 2013-12-17 Applied Materials, Inc. Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110214367A (zh) * 2017-01-16 2019-09-06 Ers电子有限公司 用于对衬底进行调温的设备和相对应的制造方法
CN110214367B (zh) * 2017-01-16 2023-08-29 Ers电子有限公司 用于对衬底进行调温的设备和相对应的制造方法
CN109473390A (zh) * 2018-08-27 2019-03-15 刘国家 一种静电吸盘
TWI747104B (zh) * 2018-12-27 2021-11-21 大陸商中微半導體設備（上海）股份有限公司 能提高控溫精度的基板安裝台及電漿處理設備

Also Published As

Publication number Publication date
US20130284372A1 (en) 2013-10-31
WO2013162938A9 (fr) 2014-02-06
WO2013162938A1 (fr) 2013-10-31

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