TW201350781A - High efficiency vapor chamber - Google Patents
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本發明提供一種高效均溫板，特別是關於一種接合於電子元件上用以均勻傳導電子元件所產生之熱能的均溫板，並涉及均溫板之腔室、毛細結構層與含鑽石組織結構薄膜層。
The invention provides an efficient temperature equalizing plate, in particular to a temperature equalizing plate which is bonded to an electronic component for uniformly conducting thermal energy generated by the electronic component, and relates to a chamber of a uniform temperature plate, a capillary structure layer and a diamond-containing structure Film layer.
按，電腦、通訊設備或液晶顯示器等各種電子設備中都採用了許多高功率電子元件，舉如電腦中央處理器、北橋晶片、發光二極體等，在要求更加快速運行之趨勢發展下，前述高功率電子元件在運行時，其單位面積所產生之熱能也隨之大幅增加，這些熱能如果不能被即時有效地散去，將嚴重影響電子元件之正常運行。因此，如何有效防止電子元件過熱而避免其效能下降之議題更顯重要，各種電子元件的散熱、冷卻裝置與方法也因應而生。
目前，最典型之散熱、冷卻裝置是一種可接合於電子元件上之均溫板(Vapor Chamber)，其可單獨使用且散熱效果佳，現已被大量使用，且均溫板也可以介設於電子元件與散熱片(heat sink)或風扇之間，該均溫板可將電子元件產生之熱量傳導至散熱片，且均溫板亦可將電子元件之熱量在傳導至散熱片之前先均勻分佈，以充分發揮散熱片之效能。
且知，傳統均溫板一般是採用銅或鋁等金屬材料構成一密閉中空殼體，其中空部分被抽成真空並填入工作流體，且殼體內壁則佈設有採用銅或鋁等金屬材料構成之毛細結構層，在真空狀況下，工作流體只要在腔室一側吸收外來熱能即會急速汽化，而此熱能經由腔室另一側排出後，汽化之工作流體即冷凝回復至液體狀態，並經由毛細結構層導引至熱能處，據以反覆進行吸、排熱循環。
然而，構成均溫板與毛細結構層之金屬材料受制於材料本身有限之熱傳導性，用來均勻分佈高熱通量(heat flux)之電子元件產生的熱能時，仍有其熱傳上的極限，故亟需加以改善，以進一步提升熱傳導效率。
According to various electronic devices such as computers, communication devices or liquid crystal displays, many high-power electronic components, such as computer central processing units, north bridge chips, and light-emitting diodes, etc., are required to develop faster. When high-power electronic components are in operation, the thermal energy generated per unit area is also greatly increased. If these thermal energy cannot be dissipated effectively and effectively, it will seriously affect the normal operation of the electronic components. Therefore, how to effectively prevent overheating of electronic components and avoid the degradation of their performance is more important. The heat dissipation and cooling devices and methods of various electronic components have also been born.
At present, the most typical heat dissipation and cooling device is a Vapor Chamber that can be bonded to electronic components. It can be used alone and has good heat dissipation effect. It has been widely used, and the temperature equalization plate can also be interposed. Between the electronic component and a heat sink or a fan, the temperature equalizing plate can conduct heat generated by the electronic component to the heat sink, and the temperature equalizing plate can evenly distribute the heat of the electronic component before being transmitted to the heat sink. To give full play to the performance of the heat sink.
It is also known that the conventional uniform temperature plate generally adopts a metal material such as copper or aluminum to form a closed hollow casing, wherein the hollow portion is evacuated and filled with a working fluid, and the inner wall of the casing is provided with a metal such as copper or aluminum. The capillary structure of the material, under vacuum conditions, the working fluid will rapidly vaporize as long as it absorbs external heat on the side of the chamber, and after the heat is discharged through the other side of the chamber, the vaporized working fluid is condensed and returned to the liquid state. And guided to the thermal energy through the capillary structure layer, according to which the suction and exhaust heat cycles are repeated.
However, the metal material constituting the temperature equalizing plate and the capillary structure layer is limited by the limited thermal conductivity of the material itself, and is used to evenly distribute the heat energy generated by the high heat flux electronic component, and still has its heat transfer limit. Therefore, improvements are needed to further improve heat transfer efficiency.
本發明之主要目的，係提供一種接合於電子元件上用以均勻傳導電子元件所產生之熱能的均溫板，可提升熱傳導之效率，而將熱能即時有效地傳導並散發出去，以進一步提升上述先前技術中，傳統均溫板之金屬材料受制於材料本身有限之熱傳導性的熱傳導效率。
為達成上述目的，本發明之高效均溫板，包含於一中空殼體內部設有一密閉腔室，該腔室內壁面上佈設有一毛細結構層，且腔室內充填一工作流體；其技術特徵為：
該毛細結構層顯露於該腔室中的表面上佈設有一含鑽石組織結構薄膜層。
藉由上述，由於含鑽石組織結構薄膜層具有高熱傳導性能，因此外來之熱能傳導至腔室一側之毛細結構層與含鑽石組織結構薄膜層時，致使腔室一側之工作流體加速吸收熱能而汽化，且腔室另一側之毛細結構層與含鑽石組織結構薄膜層可快速吸收所述汽化之工作流體的熱能，而使熱能經由腔室另一側排出，同時所述汽化之工作流體即冷凝回復至液體狀態，並經由所述毛細結構層與含鑽石組織結構薄膜層導引至腔室一側之熱能處，據以反覆進行吸、排熱循環。
據此，本發明利用該含鑽石組織結構薄膜層具有之高熱傳導性能，並結合工作流體之相變化作用，將電子元件所產生之熱能快速傳導而散發至外界，可達到減小熱阻之功效，並大幅提升熱傳導之效率，而有效解決高功率電子元件之散熱問題。同時，所述毛細結構層與含鑽石組織結構薄膜層還為冷凝後之工作流體提供回流之毛細力及流道。
以下進一步說明本創作之具體實施方式：
依據上述主要結構特徵，該殼體具有相互接合之一上蓋及一下蓋，該腔室形成於所述上蓋與下蓋之間，且所述上蓋與下蓋之間設有一個或一個以上用以支撐該殼體的支撐件。
依據上述主要結構特徵，該毛細結構層以擴散接合方式佈設於所述上蓋與下蓋內壁，所述支撐件以擴散接合方式設於所述上蓋與下蓋內壁。
依據上述主要結構特徵，該殼體以銅或鋁材料製成。
依據上述主要結構特徵，該毛細結構層是採用金屬網、燒結金屬粉末、機械粗化製程或化學粗化製程所構成。
依據上述主要結構特徵，該毛細結構層以銅或鋁材料製成。
依據上述主要結構特徵，該含鑽石組織結構薄膜層是採用化學或物理氣相沉積法形成。
然而，為能明確且充分揭露本發明，併予列舉較佳實施之圖例，以詳細說明其實施方式如後述：
The main object of the present invention is to provide a temperature equalizing plate that is bonded to an electronic component for uniformly conducting the thermal energy generated by the electronic component, thereby improving the efficiency of heat conduction, and transmitting and dissipating the heat energy in an effective manner to further enhance the above. In the prior art, the metal material of the conventional temperature equalization plate is subject to the heat conduction efficiency of the material itself having limited thermal conductivity.
In order to achieve the above object, the high-efficiency temperature equalizing plate of the present invention comprises a closed chamber inside a hollow casing, a capillary structure layer is arranged on the inner wall surface of the cavity, and the working chamber is filled with a working fluid; :
The capillary structure layer is exposed on the surface of the chamber and is provided with a diamond-containing structural film layer.
According to the above, since the diamond-containing structural film layer has high thermal conductivity, the external thermal energy is transmitted to the capillary structure layer on the side of the chamber and the diamond-containing structural film layer, so that the working fluid on the chamber side accelerates the absorption of thermal energy. Vaporization, and the capillary structure layer on the other side of the chamber and the diamond-containing structural film layer can quickly absorb the thermal energy of the vaporized working fluid, and the thermal energy is discharged through the other side of the chamber while the vaporized working fluid That is, the condensation returns to the liquid state, and is guided to the thermal energy of the side of the chamber via the capillary structure layer and the diamond-containing structural film layer, thereby repeatedly performing the suction and exhaust heat cycles.
Accordingly, the present invention utilizes the high thermal conductivity of the diamond-containing structural film layer, and combines the phase change of the working fluid to rapidly conduct the heat energy generated by the electronic component to the outside, thereby achieving the effect of reducing the thermal resistance. And greatly improve the efficiency of heat conduction, and effectively solve the heat dissipation problem of high-power electronic components. At the same time, the capillary structure layer and the diamond-containing structural film layer also provide reflowing capillary force and flow path for the condensed working fluid.
The following is a detailed description of the specific implementation of this creation:
According to the above main structural features, the housing has an upper cover and a lower cover interposed therebetween, the chamber is formed between the upper cover and the lower cover, and one or more of the upper cover and the lower cover are provided for A support that supports the housing.
According to the above main structural features, the capillary structure layer is disposed on the inner wall of the upper cover and the lower cover by diffusion bonding, and the support member is disposed on the inner wall of the upper cover and the lower cover by diffusion bonding.
According to the above main structural features, the housing is made of a copper or aluminum material.
According to the above main structural features, the capillary structure layer is composed of a metal mesh, a sintered metal powder, a mechanical roughening process or a chemical roughening process.
According to the above main structural features, the capillary structure layer is made of a copper or aluminum material.
According to the above main structural features, the diamond-containing structural film layer is formed by chemical or physical vapor deposition.
However, in order to clearly and fully disclose the present invention, the preferred embodiments are illustrated, and the detailed description of the embodiments will be described as follows:
請參閱圖1所示，揭示出本發明較佳實施例的剖示圖，圖2揭示出圖1之局部放大剖示圖，圖3揭示出圖2之局部放大剖示圖；並配合圖1至圖3說明本發明之高效均溫板，包含有一採用銅或鋁材料製成之中空殼體1，該殼體1可呈扁平狀，具有相互接合之一上蓋11及一下蓋12，且殼體1內部設有一密閉腔室10，位於所述上蓋11與下蓋12之間。
該殼體1亦可採用其他散熱性佳的金屬製成，所述上蓋11與下蓋12周邊可採用例如焊接、擴散接合等各種習知製程加以接合；在本實施上，該下蓋12頂部設有一凹槽121，而使凹槽121位於所述上蓋11底部與下蓋12頂部之間，以形成真空密閉的腔室10。
所述擴散接合(diffusion bonding)是一種元件或材料間之接合方式，即藉由適當控制加熱溫度、施加壓力與作用時間等接合參數，而將元件或材料在低於其熔點以下的溫度相接合。針對銅材的擴散接合而言，一般溫度及壓力可分別設定於例如450℃至900℃間及2MPa至20MPa間，並保持此溫度30分鐘以上，較佳可為在3小時以內。
該腔室10內壁面上以焊接或擴散接合方式佈設有一上毛細結構層21及一下毛細結構層22，而使上毛細結構層21位於上蓋11底面，且下毛細結構層22位於下蓋12頂部之凹槽121內壁。
該腔室10內部抽成真空[(介於10-3至10-7托里(torr)之間]狀態，且腔室10內部充填有一適量且具有低沸點之工作流體，該工作流體可為純水、甲醇、冷媒、丙酮或氨，從而利用工作流體之相變化達到快速傳熱與均熱之目的。
所述上毛細結構層21與下毛細結構層22可採用銅或鋁材料製成，並採用金屬網、燒結金屬粉末、機械粗化製程或化學粗化製程所構成；所述上毛細結構層21與下毛細結構層22可為多孔隙之網目(mesh)、纖維(fiber)、微溝槽(groove)、燒結粉末(sintered powder)或者以上各類型式之複合毛細結構。
在本實施上，所述上毛細結構層21與下毛細結構層22可採用金屬銅網構成，但實施上並非僅限於此。例如，若上毛細結構層21採用金屬銅網構成，而下毛細結構層22可改採燒結金屬粉製程或粗化製程等，金屬粉可為銅粉或鋁粉等，粗化製程可為任何習知的機械或化學粗化製程，機械粗化製程包含刻槽及噴沙等製程，化學粗化製程包含化學蝕刻等製程。
該上毛細結構層21底面顯露於腔室10中的表面上佈設有一上含鑽石組織結構薄膜層31，且下毛細結構層22頂面顯露於腔室10中的表面上佈設有一下含鑽石組織結構薄膜層32；所述上含鑽石組織結構薄膜層31及下含鑽石組織結構薄膜層32可採用化學氣相沉積法(Chemical Vapor Deposition, CVD)或物理氣相沉積法(Physical Vapor Deposition, PVD)形成於所述上毛細結構層21底面與下毛細結構層22頂面。
藉由上述構件組成，可供據以實施本發明均溫板於一發熱電子元件5上，該均溫板之殼體1可介設於該電子元件5與一散熱片6之間，而使殼體1之上蓋11頂面貼觸於散熱片6底面，且殼體1之下蓋12底面貼觸於電子元件5頂面；該電子元件5可為電腦中央處理器、北橋晶片、圖形視頻陣列或高功率發光二極體等，該散熱片6可由具高導熱性能之銅或鋁等金屬材料製成，可提供較大之散熱面積將電子元件5產生之熱能即時散發至環境中；所述下蓋12、下毛細結構層22與下含鑽石組織結構薄膜層32鄰近電子元件5產生之熱能而形成均溫板之熱源區(蒸發區)，所述上蓋11、上毛細結構層21與上含鑽石組織結構薄膜層31鄰近散熱片6而形成均溫板之散熱區(冷凝區)。
使用時，該電子元件5運作時所產生之熱能首先被下蓋12吸收，而使熱能經由所述熱源區之下毛細結構層22與下含鑽石組織結構薄膜層32傳導至腔室10內之工作流體；期間，由於下含鑽石組織結構薄膜層32具有高熱傳導性能，且工作流體是選用低沸點之液體，因此外來之熱能可經由下含鑽石組織結構薄膜層32急速傳導至腔室10底層之工作流體，令工作流體急速吸收該熱能後快速蒸發而汽化產生蒸汽；眾所周知，當液體發生相變化時之熱傳導係數通常是不發生相變化時之數十倍甚至數百倍，因此所述工作流體形成之蒸氣在腔室10內之傳導阻力幾乎可以忽略，致使所述工作流體形成之蒸氣迅速充滿整個腔室10。
當所述工作流體形成之蒸汽對流至腔室10頂層並接觸所述散熱區之上含鑽石組織結構薄膜層31與上毛細結構層21時，由於上含鑽石組織結構薄膜層31具有高熱傳導性能，因此上含鑽石組織結構薄膜層31可急速吸收所述工作流體形成之蒸汽所包含的熱能，而使該熱能經由所述上毛細結構層21與上蓋11快速傳導至散熱片6，致使熱能經由腔室10頂層排出；同時，所述工作流體形成之蒸汽於所述上毛細結構層21與上含鑽石組織結構薄膜層31冷凝回復成液體狀態，並沿著腔室10兩側之所述上毛細結構層21、上含鑽石組織結構薄膜層31、下毛細結構層22與下含鑽石組織結構薄膜層32回流至腔室10底層之熱源區，據以反覆進行吸、排熱循環；由於所述上毛細結構層21及下毛細結構層22內具有大量孔隙，可產生毛細作用力，而促使冷凝後之工作液體回流，並提供回流之流道。
除此之外，所述上蓋11與下蓋12之間亦可設置一個或一個以上用以支撐該殼體1的支撐件4，所述支撐件4可由具高導熱性能之銅或鋁等金屬材料製成，所述支撐件4係等間隔均勻排列於所述上蓋11與下蓋12之間的腔室10內。
所述支撐件4高度係等於或略大於腔室10之高度，而分別與上蓋11及下蓋12相互抵壓固定，且所述支撐件4之頂部與底部分別以擴散接合方式設於所述上蓋11與下蓋12內壁。
所述上毛細結構層21與下毛細結構層22上分別設有等數於所述支撐件4的通孔211、221，且所述上含鑽石組織結構薄膜層31與下含鑽石組織結構薄膜層32上分別設有等數於所述支撐件4的穿孔311、321，所述支撐件4頂端及底端分別穿過所述通孔211、221與穿孔311、321，而分別連接所述上蓋11底面與下蓋12頂面。
如此，所述支撐件4可構成均溫板之殼體1的加強結構，可防止殼體1在吸熱時受到工作流體產生之汽化壓力影響而變形。
本發明均溫板與傳統均溫板之水套測試數據如下列表1所示：1 is a cross-sectional view showing a preferred embodiment of the present invention, FIG. 2 is a partial enlarged cross-sectional view of FIG. 1, and FIG. 3 is a partial enlarged cross-sectional view of FIG. 3 illustrates a high-efficiency temperature equalizing plate of the present invention, comprising a hollow casing 1 made of a copper or aluminum material, the casing 1 being flat, having an upper cover 11 and a lower cover 12 joined to each other, and A sealed chamber 10 is disposed inside the casing 1 between the upper cover 11 and the lower cover 12.
The housing 1 can also be made of other heat-dissipating metal. The upper cover 11 and the lower cover 12 can be joined by various conventional processes such as welding and diffusion bonding. In this embodiment, the lower cover 12 is topped. A recess 121 is provided, and the recess 121 is located between the bottom of the upper cover 11 and the top of the lower cover 12 to form a vacuum-tight chamber 10.
The diffusion bonding is a bonding method between components or materials, that is, bonding a component or a material at a temperature lower than a melting point thereof by appropriately controlling bonding parameters such as heating temperature, application pressure, and action time. . For the diffusion bonding of the copper material, the general temperature and pressure may be set to, for example, between 450 ° C and 900 ° C and between 2 MPa and 20 MPa, and the temperature may be maintained for 30 minutes or longer, preferably within 3 hours.
An upper capillary structure layer 21 and a lower capillary structure layer 22 are disposed on the inner wall surface of the chamber 10 by welding or diffusion bonding, so that the upper capillary structure layer 21 is located on the bottom surface of the upper cover 11 and the lower capillary structure layer 22 is located on the top of the lower cover 12. The inner wall of the groove 121.
The inside of the chamber 10 is evacuated [between 10 -3 and 10 -7 torr], and the inside of the chamber 10 is filled with an appropriate amount of working fluid having a low boiling point, and the working fluid may be Pure water, methanol, refrigerant, acetone or ammonia, so that the phase change of the working fluid can achieve the purpose of rapid heat transfer and soaking.
The upper capillary structure layer 21 and the lower capillary structure layer 22 may be made of copper or aluminum material, and are composed of a metal mesh, a sintered metal powder, a mechanical roughening process or a chemical roughening process; the upper capillary structure layer 21 The lower capillary structure layer 22 may be a porous mesh, a fiber, a groove, a sintered powder, or a composite capillary structure of the above type.
In the present embodiment, the upper capillary structure layer 21 and the lower capillary structure layer 22 may be formed of a metal copper mesh, but the implementation is not limited thereto. For example, if the upper capillary structure layer 21 is made of a metal copper mesh, and the lower capillary structure layer 22 can be modified by a sintered metal powder process or a roughening process, the metal powder can be copper powder or aluminum powder, etc., and the roughening process can be any Conventional mechanical or chemical roughening processes, mechanical roughening processes include processes such as grooving and sandblasting, and chemical roughening processes include processes such as chemical etching.
A surface of the upper capillary structure layer 21 is exposed on the surface of the chamber 10, and a diamond-containing structure film layer 31 is disposed on the surface of the lower capillary structure layer 22. The top surface of the lower capillary structure layer 22 is exposed on the surface of the chamber 10 and is provided with a diamond-containing structure. The structural film layer 32; the diamond-containing structure film layer 31 and the diamond-containing structure film layer 32 may be subjected to Chemical Vapor Deposition (CVD) or Physical Vapor Deposition (PVD). ) formed on the bottom surface of the upper capillary structure layer 21 and the top surface of the lower capillary structure layer 22.
With the above components, the temperature equalizing plate of the present invention can be implemented on a heat-generating electronic component 5, and the casing 1 of the temperature-regulating plate can be interposed between the electronic component 5 and a heat sink 6, so that The top surface of the cover 11 of the casing 1 is in contact with the bottom surface of the heat sink 6, and the bottom surface of the lower cover 12 of the casing 1 is in contact with the top surface of the electronic component 5. The electronic component 5 can be a computer central processing unit, a north bridge chip, and a graphic video. Array or high-power light-emitting diode, etc., the heat sink 6 can be made of a metal material such as copper or aluminum with high thermal conductivity, and can provide a large heat dissipation area to instantly dissipate the heat generated by the electronic component 5 into the environment; The cover 12, the lower capillary structure layer 22 and the lower diamond-containing structure film layer 32 are adjacent to the thermal energy generated by the electronic component 5 to form a heat source region (evaporation region) of the temperature equalization plate, and the upper cover 11 and the upper capillary structure layer 21 are The diamond-containing structure film layer 31 is adjacent to the heat sink 6 to form a heat dissipation zone (condensation zone) of the temperature equalization plate.
In use, the thermal energy generated by the operation of the electronic component 5 is first absorbed by the lower cover 12, and the thermal energy is conducted into the chamber 10 via the capillary structure layer 22 under the heat source region and the underlying diamond-containing structural film layer 32. The working fluid; during the period, since the underlying diamond-containing structural film layer 32 has high thermal conductivity and the working fluid is a liquid having a low boiling point, the external thermal energy can be rapidly conducted to the bottom of the chamber 10 via the underlying diamond-containing structural film layer 32. The working fluid causes the working fluid to rapidly absorb the thermal energy and then evaporates rapidly to vaporize to generate steam; it is known that when the liquid undergoes a phase change, the heat transfer coefficient is usually tens or even hundreds of times when no phase change occurs, so the work The conduction resistance of the vapor formed by the fluid within the chamber 10 is nearly negligible, causing the vapor formed by the working fluid to rapidly fill the entire chamber 10.
When the vapor formed by the working fluid convects to the top of the chamber 10 and contacts the diamond-containing structural film layer 31 and the upper capillary structure layer 21 on the heat dissipating region, the film structure 31 containing the diamond-containing structure has high heat conduction performance. Therefore, the diamond-containing structure film layer 31 can rapidly absorb the heat energy contained in the steam formed by the working fluid, and the heat energy is quickly transmitted to the heat sink 6 via the upper capillary structure layer 21 and the upper cover 11, so that the heat energy is passed through The top of the chamber 10 is discharged; at the same time, the steam formed by the working fluid is condensed and returned to a liquid state on the upper capillary structure layer 21 and the diamond-containing structural film layer 31, and is along the sides of the chamber 10. The capillary structure layer 21, the diamond-containing structure film layer 31, the lower capillary structure layer 22 and the lower diamond-containing structure film layer 32 are returned to the heat source region of the bottom layer of the chamber 10, and the heat absorption cycle is repeated. It is described that the capillary structure layer 21 and the lower capillary structure layer 22 have a large number of pores, which can generate capillary force, promote the reflux of the condensed working liquid, and provide a flow path for reflow.
In addition, one or more support members 4 for supporting the housing 1 may be disposed between the upper cover 11 and the lower cover 12, and the support member 4 may be made of metal such as copper or aluminum having high thermal conductivity. Made of a material, the support members 4 are evenly spaced in the chamber 10 between the upper cover 11 and the lower cover 12.
The height of the support member 4 is equal to or slightly larger than the height of the chamber 10, and is respectively pressed and fixed with the upper cover 11 and the lower cover 12, and the top and the bottom of the support member 4 are respectively disposed in the diffusion joint manner. The upper cover 11 and the inner wall of the lower cover 12.
The upper capillary structure layer 21 and the lower capillary structure layer 22 are respectively provided with through holes 211 and 221 which are equal to the support member 4, and the diamond-containing structural film layer 31 and the lower diamond-containing structural film are provided. The holes 32 and 321 of the support member 4 are respectively disposed on the layer 32, and the top end and the bottom end of the support member 4 pass through the through holes 211 and 221 and the through holes 311 and 321 respectively, respectively The bottom surface of the upper cover 11 and the top surface of the lower cover 12.
Thus, the support member 4 can constitute a reinforcing structure of the casing 1 of the temperature equalizing plate, which can prevent the casing 1 from being deformed by the vaporization pressure generated by the working fluid during heat absorption.
The water jacket test data of the uniform temperature plate and the conventional uniform temperature plate of the present invention are shown in the following list 1:
表1 Table 1
請參閱圖4所示，揭示出圖1實施例之水套測試數據之折線圖，說明表1之本發明均溫板與傳統均溫板之水套測試數據的分佈狀況，其中可清楚看出，本發明均溫板之散熱能力明顯高於傳統均溫板。
藉由上述，本發明利用所述上含鑽石組織結構薄膜層31與下含鑽石組織結構薄膜層32具有之高熱傳導性能的特性，有效地將發熱電子元件5所產生之熱能即時傳導至散熱片6而散發至外界，並結合均溫板內工作流體之相變化作用而具有之良好熱傳導特性，綜合達到有效減小熱阻之功效，達到將熱能從電子元件5經由均溫板快速且均勻地傳導至散熱片6而即時散熱之目的，熱傳導特性十分優異，並大幅提升熱傳導之效率，有效解決高發熱能電子元件5之散熱問題。
據此，以進一步提升上述先前技術中，傳統均溫板之金屬材料受制於材料本身有限之熱傳導性的熱傳導效率。同時，所述上毛細結構層21、下毛細結構層22、上含鑽石組織結構薄膜層31與下含鑽石組織結構薄膜層32還為冷凝後之工作流體提供回流之毛細力及流道。
綜上所陳，僅為本發明之較佳實施例而已，並非用以限定本發明；凡其他未脫離本發明所揭示之精神下而完成的等效修飾或置換，均應包含於後述申請專利範圍內。
Referring to FIG. 4, a line diagram of the water jacket test data of the embodiment of FIG. 1 is disclosed, and the distribution of the water jacket test data of the uniform temperature plate of the present invention and the conventional uniform temperature plate is illustrated, wherein it can be clearly seen The heat dissipation capability of the uniform temperature plate of the invention is significantly higher than that of the conventional uniform temperature plate.
According to the above, the present invention utilizes the high thermal conductivity property of the diamond-containing microstructure film layer 31 and the diamond-containing structure film layer 32 to effectively conduct the heat energy generated by the heat-generating electronic component 5 to the heat sink. 6 and distributed to the outside world, combined with the phase change of the working fluid in the uniform temperature plate to have good heat conduction characteristics, comprehensively achieve the effect of effectively reducing the thermal resistance, to achieve thermal energy from the electronic component 5 through the temperature equalization plate quickly and uniformly Conducted to the heat sink 6 for immediate heat dissipation, the heat transfer characteristics are excellent, and the heat transfer efficiency is greatly improved, thereby effectively solving the heat dissipation problem of the high heat-generating electronic component 5.
Accordingly, in order to further enhance the above prior art, the metal material of the conventional temperature equalization plate is subject to the heat conduction efficiency of the material itself having limited thermal conductivity. At the same time, the upper capillary structure layer 21, the lower capillary structure layer 22, the diamond-containing structure film layer 31 and the lower diamond-containing structure film layer 32 also provide a reflowing capillary force and a flow path for the condensed working fluid.
The invention is not intended to limit the invention, and other equivalent modifications or substitutions that are not departing from the spirit of the invention are intended to be included in the appended claims. Within the scope.
1．．．殼體1. . . case
10．．．腔室10. . . Chamber
11．．．上蓋11. . . Upper cover
12．．．下蓋12. . . lower lid
121．．．凹槽121. . . Groove
21．．．上毛細結構層twenty one. . . Upper capillary layer
211、221．．．通孔211, 221. . . Through hole
22．．．下毛細結構層twenty two. . . Lower capillary structure layer
31．．．上含鑽石組織結構薄膜層31. . . Diamond-containing structural film layer
311、321．．．穿孔311, 321. . . perforation
32．．．下含鑽石組織結構薄膜層32. . . Diamond-containing structural film layer
4．．．支撐件4. . . supporting item
5．．．電子元件5. . . Electronic component
6．．．散熱片6. . . heat sink
圖1 是本發明較佳實施例的剖示圖；
圖2 是圖1之局部放大剖示圖；
圖3 是圖2之局部放大剖示圖；
圖4 是圖1實施例之水套測試數據之折線圖。
Figure 1 is a cross-sectional view of a preferred embodiment of the present invention;
Figure 2 is a partial enlarged cross-sectional view of Figure 1;
Figure 3 is a partial enlarged cross-sectional view of Figure 2;
Figure 4 is a line drawing of the water jacket test data of the embodiment of Figure 1.
1．．．殼體1. . . case
10．．．腔室10. . . Chamber
11．．．上蓋11. . . Upper cover
12．．．下蓋12. . . lower lid
21．．．上毛細結構層twenty one. . . Upper capillary layer
22．．．下毛細結構層twenty two. . . Lower capillary structure layer
31．．．上含鑽石組織結構薄膜層31. . . Diamond-containing structural film layer
32．．．下含鑽石組織結構薄膜層32. . . Diamond-containing structural film layer
4．．．支撐件4. . . supporting item
5．．．電子元件5. . . Electronic component
6．．．散熱片6. . . heat sink
Claims (7)
該毛細結構層顯露於該腔室中的表面上佈設有一含鑽石組織結構薄膜層。An efficient temperature equalizing plate comprises a closed chamber inside a hollow shell, a capillary structure layer is arranged on the inner wall surface of the chamber, and a working fluid is filled in the chamber; the characteristic is:
The capillary structure layer is exposed on the surface of the chamber and is provided with a diamond-containing structural film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| TW101121283A TW201350781A (en) | 2012-06-14 | 2012-06-14 | High efficiency vapor chamber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101121283A TW201350781A (en) | 2012-06-14 | 2012-06-14 | High efficiency vapor chamber |
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| TW201350781A true TW201350781A (en) | 2013-12-16 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105889795A (en) * | 2014-10-23 | 2016-08-24 | 迈萪科技股份有限公司 | Light source module |
| CN108076616A (en) * | 2017-12-27 | 2018-05-25 | 珠海格力电器股份有限公司 | Photovoltaic cooling device and photovoltaic centrifuge system |
| CN112747619A (en) * | 2019-10-31 | 2021-05-04 | 建准电机工业股份有限公司 | Temperature equalizing plate |
| CN112747618A (en) * | 2019-10-31 | 2021-05-04 | 建准电机工业股份有限公司 | Vapor chamber and capillary sheet thereof |
| CN113140830A (en) * | 2020-01-20 | 2021-07-20 | 广州力及热管理科技有限公司 | Temperature-equalizing plate element with heating function and power battery module applying same |
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2012
- 2012-06-14 TW TW101121283A patent/TW201350781A/en unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105889795A (en) * | 2014-10-23 | 2016-08-24 | 迈萪科技股份有限公司 | Light source module |
| CN108076616A (en) * | 2017-12-27 | 2018-05-25 | 珠海格力电器股份有限公司 | Photovoltaic cooling device and photovoltaic centrifuge system |
| CN108076616B (en) * | 2017-12-27 | 2023-09-08 | 珠海格力电器股份有限公司 | Photovoltaic centrifuge system |
| CN112747619A (en) * | 2019-10-31 | 2021-05-04 | 建准电机工业股份有限公司 | Temperature equalizing plate |
| CN112747618A (en) * | 2019-10-31 | 2021-05-04 | 建准电机工业股份有限公司 | Vapor chamber and capillary sheet thereof |
| CN112747619B (en) * | 2019-10-31 | 2022-10-18 | 建准电机工业股份有限公司 | Temperature equalizing plate |
| CN113140830A (en) * | 2020-01-20 | 2021-07-20 | 广州力及热管理科技有限公司 | Temperature-equalizing plate element with heating function and power battery module applying same |
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