M443873 五、新型說明： 【新型所屬之技術領域】 [0001] 本創作提供一種高效均溫板，特別是關於一種接合於電 子元件上用以均勻傳導電子元件所產生之熱能的均溫板 ，並涉及均溫板之腔室、毛細結構層與含鑽石組織結構 薄膜層。 【先前技術】 [0002] 按，電腦、通訊設備或液晶顯示器等各種電子設備中都 採用了許多高功率電子元件，舉如電腦中央處理器、北 橋晶片、發光二極體等，在要求更加快速運行之趨勢發 展下，前述高功率電子元件在運行時，其單位面積所產 生之熱能也隨之大幅增加，這些熱能如果不能被即時有 效地散去，將嚴重影響電子元件之正常運行。因此，如 何有效防止電子元件過熱而避免其效能下降之議題更顯 重要，各種電子元件的散熱、冷卻裝置與方法也因應而 生。 目前，最典型之散熱、冷卻裝置是一種可接合於電子元 件上之均溫板（Vapor Chamber)，其可單獨使用且散熱 效果佳，現已被大量使用，且均溫板也可以介設於電子 元件與散熱片（heat sink)或風扇之間，該均溫板可將 電子元件產生之熱量傳導至散熱片，且均溫板亦可將電 子元件之熱量在傳導至散熱片之前先均勻分佈，以充分 發揮散熱片之效能。 且知，傳統均溫板一般是採用銅或鋁等金屬材料構成一 密閉中空殼體，其中空部分被抽成真空並填入工作流體 觀單編號A0101 1012036758-0 第3頁/共16頁 M443873 ，且殼體内壁則佈設有採用銅或鋁等金屬材料構成之毛 細結構層，在真空狀況下，工作流體只要在腔室一侧吸 收外來熱能即會急速汽化，而此熱能經由腔室另一側排 出後，汽化之工作流體即冷凝回復至液體狀態，並經由 毛細結構層導引至熱能處，據以反覆進行吸、排熱循環 0 然而，構成均溫板與毛細結構層之金屬材料受制於材料 本身有限之熱傳導性，用來均勻分佈高熱通量（heat flux)之電子元件產生的熱能時，仍有其熱傳上的極限， 故亟需加以改善，以進一步提升熱傳導效率。 【新型内容】 [0003] 本創作之主要目的，係提供一種接合於電子元件上用以 均勻傳導電子元件所產生之熱能的均溫板，可提升熱傳 導之效率，而將熱能即時有效地傳導並散發出去，以進 一步提升上述先前技術中，傳統均溫板之金屬材料受制 於材料本身有限之熱傳導性的熱傳導效率。 為達成上述目的，本創作之高效均溫板，包含於一中空 殼體内部設有一密閉腔室，該殼體具有相互接合之一上 蓋及一下蓋，該腔室形成於所述上蓋與下蓋之間，且所 述上蓋與下蓋之間設有一個或一個以上用以支撐該殼體 的支撐件，該上蓋底面設有一上毛細結構層，且下蓋頂 部設有一下毛細結構層，並於腔室内充填一工作流體； 其技術特徵為： 該上毛細結構層底面顯露於該腔室中的表面上佈設有一 上含鑽石組織結構薄膜層，且下毛細結構層頂面顯露於 該腔室中的表面上佈設有一下含鑽石組織結構薄膜層， 1012036758-0 1()121145#單編號A0101 第4頁/共16頁 M443873 所述上毛細結構層與下毛細結構層上分別設有等數於所 述支撐件的通孔，且所述上含鑽石組織結構薄膜層與下 . 含鑽石組織結構薄膜層上分別設有等數於所述支撐件的 . 穿孔，所述支撐件頂端及底端分別穿過所述通孔與穿孔 ，而分別連接所述上蓋底面與下蓋頂面。 藉由上述，由於所述上含鑽石組織結構薄膜層與下含鑽 石組織结構薄膜層具有高熱傳導性能，因此外來之熱能 傳導至下蓋之下毛細結構層與下含鑽石組織結構薄膜層 時，致使下蓋近側之工作流體加速吸收熱能而汽化，且 ® 上蓋之上毛細結構層與上含鑽石組織結構薄膜層可快速 吸收所述汽化之工作流體的熱能，而使熱能經由上蓋排 出，同時所述汽化之工作流體即冷凝回復至液體狀態， 並經由所述上、下毛細結構層與上、下含鑽石組織結構 薄膜層導引至下蓋之熱能處，據以反覆進行吸、排熱循 環。 據此，本創作利用所述上、下含鑽石組織結構薄膜層具 有之高熱傳導性能，並結合工作流體之相變化作用，將 電子元件所產生之熱能快速傳導而散發至外界，可達到 減小熱阻之功效，並大幅提升熱傳導之效率，而有效解 決高功率電子元件之散熱問題。同時，所述上、下毛細 結構層與上、下含鑽石組織結構薄膜層還為冷凝後之工 作流體提供回流之毛細力及流道。 以下進一步說明本創作之具體實施方式： 依據上述主要結構特徵，所述上毛細結構層與下毛細結 構層分別以擴散接合方式佈設於所述上蓋與下蓋内壁，M443873 V. New description: [New technology field] [0001] The present invention provides an efficient temperature equalizing plate, in particular to a temperature equalizing plate which is bonded to an electronic component for uniformly conducting thermal energy generated by the electronic component, and The chamber, the capillary structure layer and the diamond-containing structural film layer of the uniform temperature plate are involved. [Previous Technology] [0002] Many high-power electronic components are used in various electronic devices such as computers, communication devices, or liquid crystal displays, such as computer central processing units, north bridge chips, and light-emitting diodes. Under the development trend of operation, the heat energy generated per unit area of the above-mentioned high-power electronic components is greatly increased during operation, and if these heat energy cannot be dissipated in an instant and effectively, the normal operation of the electronic components will be seriously affected. Therefore, the issue of how to effectively prevent overheating of electronic components from being degraded is more important, and heat dissipation and cooling devices and methods for various electronic components are also expected. At present, the most typical heat dissipation and cooling device is a Vapor Chamber that can be bonded to electronic components. It can be used alone and has good heat dissipation effect. It has been widely used, and the temperature equalization plate can also be interposed. Between the electronic component and a heat sink or a fan, the temperature equalizing plate can conduct heat generated by the electronic component to the heat sink, and the temperature equalizing plate can evenly distribute the heat of the electronic component before being transmitted to the heat sink. To give full play to the performance of the heat sink. It is also known that the conventional uniform temperature plate generally adopts a metal material such as copper or aluminum to form a closed hollow casing, wherein the hollow portion is evacuated and filled with a working fluid. The single number A0101 1012036758-0 page 3/16 M443873, and the inner wall of the casing is provided with a capillary structure layer made of a metal material such as copper or aluminum. Under vacuum conditions, the working fluid absorbs external heat energy on the side of the chamber to rapidly vaporize, and the heat energy is further vaporized through the chamber. After one side is discharged, the vaporized working fluid is condensed and returned to the liquid state, and is guided to the thermal energy via the capillary structure layer, thereby repeatedly performing the suction and exhaust heat cycles. However, the metal material constituting the temperature equalizing plate and the capillary structure layer is formed. Subject to the limited thermal conductivity of the material itself, the thermal energy generated by the electronic components used to evenly distribute the high heat flux still has its heat transfer limit, so it needs to be improved to further improve the heat transfer efficiency. [New content] [0003] The main purpose of the present invention is to provide a temperature equalizing plate that is bonded to an electronic component for uniformly conducting the thermal energy generated by the electronic component, thereby improving the efficiency of heat conduction and transmitting heat energy instantaneously and efficiently. Emitted to further enhance the above-described prior art, the metal material of the conventional temperature equalization plate is subject to the limited thermal conductivity of the material itself. In order to achieve the above object, the high-efficiency temperature equalizing plate of the present invention comprises a sealed chamber inside a hollow casing, the casing having an upper cover and a lower cover joined to each other, the chamber being formed on the upper cover and the lower cover Between the cover, and between the upper cover and the lower cover, one or more support members for supporting the housing are disposed, the bottom surface of the upper cover is provided with an upper capillary structure layer, and the top of the lower cover is provided with a capillary structure layer. And filling a working fluid in the chamber; the technical feature is: a surface of the upper capillary structure layer exposed on the surface of the chamber is provided with a diamond-containing structural film layer, and a top surface of the lower capillary structure layer is exposed in the cavity The surface of the chamber is provided with a thin layer of diamond-containing structural structure, 1012036758-0 1 () 121145# single number A0101, page 4 / total 16 pages, M443873, respectively, on the upper capillary structure layer and the lower capillary structure layer, etc. a plurality of through holes of the support member, and the diamond-containing structural film layer and the lower diamond-containing structure film layer are respectively provided with a plurality of perforations of the support member, the support member top end and Ends respectively through the through holes and perforations, are respectively connected to the bottom surface of the upper cover and the lower cover top surface. According to the above, since the diamond-containing structural film layer and the lower diamond-containing structural film layer have high thermal conductivity, the external thermal energy is transmitted to the lower capillary structure layer and the lower diamond-containing structure film layer. The working fluid on the near side of the lower cover accelerates to absorb heat energy and vaporizes, and the capillary structure layer on the upper cover and the diamond-containing structural film layer can quickly absorb the heat energy of the vaporized working fluid, so that the heat energy is discharged through the upper cover while The vaporized working fluid is condensed and returned to a liquid state, and is guided to the thermal energy of the lower cover via the upper and lower capillary structure layers and the upper and lower diamond-containing structural film layers, thereby repeatedly performing suction and heat removal. cycle. Accordingly, the present invention utilizes the high thermal conductivity of the upper and lower diamond-containing structural film layers, and in combination with the phase change of the working fluid, the thermal energy generated by the electronic components is quickly transmitted to the outside, and can be reduced. The effect of thermal resistance, and greatly improve the efficiency of heat conduction, and effectively solve the heat dissipation problem of high-power electronic components. At the same time, the upper and lower capillary structure layers and the upper and lower diamond-containing structural film layers also provide recirculating capillary forces and flow paths for the condensed working fluid. In the following, the specific embodiment of the present invention is further described. According to the above main structural features, the upper capillary structure layer and the lower capillary structure layer are respectively disposed on the inner walls of the upper cover and the lower cover by diffusion bonding.
C 所述支撐件以擴散接合方式設於所述上蓋與下蓋内壁。 10121145# 單编號删1 第 5 頁 / 共 16 頁 1012036758-0 M443873 依據上述主要結構特徵，該殼體以銅或鋁材料製成。 依據上述主要結構特徵，所述上毛細結構層與下毛細結 構層分別是採用金屬網、燒結金屬粉末、機械粗化製程 或化學粗化製程所構成。 依據上述主要結構特徵，所述上毛細結構層與下毛細結 構層分別以銅或鋁材料製成。 依據上述主要結構特徵，所述上含鑽石組織結構薄膜層 與下含鑽石組織結構薄膜層是採用化學或物理氣相沉積 法形成。 4 然而，為能明確且充分揭露本創作，併予列舉較佳實施 之圖例，以詳細說明其實施方式如後述： 【實施方式】 [0004] 請參閱圖1所示，揭示出本創作較佳實施例的剖示圖，圖 2揭示出圖1之局部放大剖示圖，圖3揭示出圖2之局部放 大剖示圖；並配合圖1至圖3說明本創作之高效均溫板， 包含有一採用銅或鋁材料製成之中空殼體1，該殼體1可 呈扁平狀，具有相互接合之一上蓋11及一下蓋12，且殼 4 體1内部設有一密閉腔室10，位於所述上蓋11與下蓋12之 間。 該殼體1亦可採用其他散熱性佳的金屬製成，所述上蓋11 與下蓋12周邊可採用例如焊接、擴散接合等各種習知製 程加以接合；在本實施上，該下蓋12頂部設有一凹槽121 ，而使凹槽121位於所述上蓋11底部與下蓋12頂部之間， 以形成真空密閉的腔室10。 所述擴散接合（diffusion bonding)是一種元件或材料 間之接合方式，即藉由適當控制加熱溫度、施加壓力與 1012114#單编號删1 第 6 頁 / 共 16 頁 1012036758-0 M443873 作用時間等接合參數，而將元件或材料在低於其熔點以 下的Vm度相接合。針對銅材的擴散接合而言’—般溫度 及壓力可分別設定於例如450°C至900°C間及2MPa至 2〇MPa間，並保持此溫度30分鐘以上’較佳可為在3小時 以内。 所述上篕11與下蓋12之間設置一個或一個以上用以支樓 殼體1的支撐件4，所述支撐件4可由具高導熱性能之銅或 紹等金屬材料製成，且所述支撐件4係等間隔均勻排列於 所述上蓋11與下蓋12之間的腔室10内。 所述支撐件4高度係等於或略大於腔室1〇之高度，而分別 與上蓋11及下蓋12相互抵壓固定，且所述支樓件4之頂部 與底部分別以擴散接合方式設於所述上蓋丨丨與下蓋12内 壁。 該上蓋11底面以焊接或擴散接合方式佈設有—上毛細結 構層21 ’且下蓋12頂部之凹槽m内壁以焊接或擴散接合 方式佈設有一下毛細結構層2 2 »C The support member is disposed on the inner wall of the upper cover and the lower cover in a diffusion joint manner. 10121145# Single number deletion 1 Page 5 / Total 16 1012036758-0 M443873 According to the above main structural features, the housing is made of copper or aluminum. According to the above main structural features, the upper capillary structure layer and the lower capillary structure layer are respectively formed by a metal mesh, a sintered metal powder, a mechanical roughening process or a chemical roughening process. According to the above main structural features, the upper capillary structure layer and the lower capillary structure layer are respectively made of a copper or aluminum material. According to the above main structural features, the diamond-containing structural film layer and the lower diamond-containing structural film layer are formed by chemical or physical vapor deposition. 4 In order to clarify and fully disclose the present invention, and to illustrate the preferred embodiment, the detailed description will be described as follows: [Embodiment] [0004] Please refer to FIG. FIG. 2 is a partial enlarged cross-sectional view of FIG. 1 , and FIG. 3 is a partial enlarged cross-sectional view of FIG. 2 , and the high efficiency uniform temperature plate of the present invention is included with FIG. 1 to FIG. There is a hollow casing 1 made of copper or aluminum material. The casing 1 can be flat, and has an upper cover 11 and a lower cover 12 joined to each other, and a closed chamber 10 is disposed inside the casing 4 body. Between the upper cover 11 and the lower cover 12. The housing 1 can also be made of other heat-dissipating metal. The upper cover 11 and the lower cover 12 can be joined by various conventional processes such as soldering and diffusion bonding. In this embodiment, the lower cover 12 is topped. A recess 121 is provided so that the recess 121 is located between the bottom of the upper cover 11 and the top of the lower cover 12 to form a vacuum-tight chamber 10. The diffusion bonding is a type of bonding between components or materials, that is, by appropriately controlling the heating temperature and applying pressure, and the application time is 1012114# single number deletion 1 page 6 / 16 page 1012036758-0 M443873 time of action, etc. The parameters are joined while the component or material is joined at a Vm below its melting point. For the diffusion bonding of copper materials, the temperature and pressure can be set to, for example, between 450 ° C and 900 ° C and between 2 MPa and 2 MPa, and the temperature is maintained for 30 minutes or more. Preferably, it can be 3 hours. Within. One or more support members 4 for the branch housing 1 are disposed between the upper jaw 11 and the lower cover 12, and the support member 4 may be made of a metal material such as copper or slag having high thermal conductivity. The support members 4 are evenly spaced in the chamber 10 between the upper cover 11 and the lower cover 12. The height of the support member 4 is equal to or slightly larger than the height of the chamber 1 ,, and is respectively pressed and fixed with the upper cover 11 and the lower cover 12, and the top and the bottom of the support member 4 are respectively disposed in a diffusion joint manner. The upper cover 丨丨 and the inner wall of the lower cover 12. The bottom surface of the upper cover 11 is provided with an upper capillary structure layer 21' by welding or diffusion bonding, and the inner wall of the groove m at the top of the lower cover 12 is provided with a lower capillary structure layer 2 2 by welding or diffusion bonding.
該腔室10内部抽成真空[(介於10~3至10-7托里（1：〇1^)之 間]狀態，且腔室!。内部充填有一適量且具有低沸::: 作流體，該工作流體可為純水、甲醇、冷媒、丙酮或氨 ，從而利用X作流禮之相變化達到快速傳熱與均熱之目 的0 所述上毛細結構層21與下毛細結構層22可採 料製成，並採用金屬網、燒結金屬粉末、機娀粗化製程 或化學粗化製程所構成；所述上毛細結構層以與下毛細 結構層22可為多孔隙之網目（mesh)、纖維（f iber)、微 溝槽（groove)、燒結粉末（sintered p〇wde〇或者以 ^121145,單編號A0101 第7頁/共16頁 1012036758-0 M443873 上各類型式之複合毛細結構。 在本實施上，所述上毛細結構層21與下毛細結構層22可 採用金屬銅網構成，但實施上並非僅限於此。例如若 上毛細結構層21採用金屬銅網構成，而下毛細結構層22 可改採繞結金屬粉製程或粗化製程等，金屬粉γ為銅粉 或銘粉等，粗化製程可為任何習知的機械或化學教化製 程’機械粗化製程包含刻槽及喷沙等製程，化學挺化製 程包含化學蝕刻等製程。The inside of the chamber 10 is evacuated [between 10 and 3 to 10 Torr (1: 〇1^)], and the chamber is filled. The internal filling has an appropriate amount and has a low boiling ratio::: The fluid, the working fluid may be pure water, methanol, refrigerant, acetone or ammonia, thereby utilizing X as a phase change of the flow to achieve the purpose of rapid heat transfer and soaking. 0 The upper capillary structure layer 21 and the lower capillary structure layer 22 It can be made of materials, and is composed of a metal mesh, a sintered metal powder, a machine roughening process or a chemical roughening process; the upper capillary structure layer and the lower capillary structure layer 22 can be a porous mesh. , fiber (f iber), micro groove (groove), sintered powder (sintered p〇wde 〇 or ^121145, single number A0101 page 7 / a total of 16 pages 1012036758-0 M443873 various types of composite capillary structure. In this embodiment, the upper capillary structure layer 21 and the lower capillary structure layer 22 may be formed of a metal copper mesh, but the implementation is not limited thereto. For example, if the upper capillary structure layer 21 is formed of a metal copper mesh, and the lower capillary structure Layer 22 can be modified to pass the metal powder process or roughening process, etc., metal powder γ Ming powder or copper powder, roughening process may 'mechanical roughening process comprises a groove and sandblasting processes any conventional mechanical or chemical education process, chemical process comprises of quite a chemical etching process.
該上毛細結構層21底面顯露於腔室10中的表面上佈咬有 一上含鑽石組織結構薄膜層31，且下毛細結構層22須面 顯露於腔室10中的表面上佈設有一下含鑽石級織結構薄 膜層32 ;所述上含鑽石組織結構薄膜層31及下含鑽石組 織結構薄膜層32可採用化學氣相沉積法（ChemiCalThe bottom surface of the upper capillary structure layer 21 is exposed on the surface of the chamber 10 and has a diamond-containing structural film layer 31, and the lower capillary structure layer 22 is exposed on the surface of the chamber 10 and is provided with a diamond-containing layer. The woven structure film layer 32; the diamond-containing structure film layer 31 and the diamond-containing structure film layer 32 may be subjected to chemical vapor deposition (ChemiCal)
Vapor Deposition, CVD)或物理氣相沉積法 (Physical Vapor Deposition, PVD)形成於所述上 毛細結構層21底面與下毛細結構層22頂面。Vapor Deposition (CVD) or Physical Vapor Deposition (PVD) is formed on the bottom surface of the upper capillary structure layer 21 and the top surface of the lower capillary structure layer 22.
所述上毛細結構層21與下毛細結構層22上分別設有等數 於所述支撐件4的通孔211、221，且所述上含鐵石組織結 構薄膜層31與下含鑽石組織結構薄膜層32上分別設有等 數於所述支撐件4的穿孔311、321，所述支撐件4頂端及 底端分別穿過所述通孔211、221與穿孔311、321，而分 別連接所述上蓋11底面與下蓋12頂面。 如此，所述支撐件4可構成均溫板之殼體1的加強結構， 可防止殼體1在吸熱時受到工作流體產生之汽化壓力影響 而變形。 藉由上述構件組成，可供據以實施本創作均溫板於一發 10121145^單编號 A0101 1? 〇 / it 1R 百 第8頁/共16頁 1012036758-0 M443873 熱電子元件5上，該均溫板之殼體1可介設於該電子元件5 與一散熱片6之間，而使殼體1之上蓋Π頂面貼觸於散熱 片6底面，且殼體1之下蓋12底面貼觸於電子元件5頂面； 該電子元件5可為電腦中央處理器、北橋晶片、圖形視頻 陣列或高功率發光二極體等，該散熱片6可由具高導熱性 能之銅或鋁等金屬材料製成，可提供較大之散熱面積將 電子元件5產生之熱能即時散發至環境中；所述下蓋12、 下毛細結構層22與下含鑽石組織結構薄膜層32鄰近電子 元件5產生之熱能而形成均溫板之熱源區（蒸發區），所述 上蓋11、上毛細結構層21與上含鑽石組織結構薄膜層31 鄰近散熱片6而形成均溫板之散熱區（冷凝區）。 使用時，該電子元件5運作時所產生之熱能首先被下蓋12 吸收，而使熱能經由所述熱源區之下毛細結構層22與下 含鑽石組織結構薄膜層32傳導至腔室10内之工作流體； 期間，由於下含鑽石組織結構薄膜層32具有高熱傳導性 能，且工作流體是選用低沸點之液體，因此外來之熱能 可經由下含鑽石組織結構薄膜層32急速傳導至腔室10底 層之工作流體，令工作流體急速吸收該熱能後快速蒸發 而汽化產生蒸汽；眾所周知，當液體發生相變化時之熱 傳導係數通常是不發生相變化時之數十倍甚至數百倍， 因此所述工作流體形成之蒸氣在腔室10内之傳導阻力幾 乎可以忽略，致使所述工作流體形成之蒸氣迅速€滿整 個腔室10。 當所述工作流體形成之蒸汽對流至腔室10頂層並接觸所 述散熱區之上含鑽石組織結構薄膜層31與上毛細結構層 21時，由於上含鑽石組織結構薄膜層31具有高熱傳導性 HU21145#單編號 A〇101 第9頁/共16頁 1012036758-0 M443873 能，因此上含鑽石組織結構薄膜層31可急速吸收所述工 作流體形成之蒸汽所包含的熱能，而使該熱能經由所述 上毛細結構層21與上蓋11快速傳導至散熱片6，致使熱能 經由腔室10頂層排出；同時，所述工作流體形成之蒸汽 於所述上毛細結構層21與上含鑽石組織結構薄膜層31冷 凝回復成液體狀態，並沿著腔室10兩側之所述上毛細結 構層21、上含鑽石組織結構薄膜層31、下毛細結構層22 與下含鑽石組織結構薄膜層32回流至腔室10底層之熱源 區，據以反覆進行吸、排熱循環；由於所述上毛細結構 層21及下毛細結構層22内具有大量扎隙，可產生毛細作 用力，而促使冷凝後之工作液體回流，並提供回流之流 道。 本創作均溫板與傳統均溫板之水套測試數據如下列表1所 示： 90W 150W 180W Rc/a 性能差 異％ Rc/a 性能差 異％ Rc/a 性能差 異％ 傳統均溫板 0.217 ·· 0.198 _ _ 0.193 · 本發明均温板 0.195 0.101 0.181 0.086 0.174 0.098 表1The upper capillary structure layer 21 and the lower capillary structure layer 22 are respectively provided with through holes 211, 221 equal to the support member 4, and the upper iron-containing structural film layer 31 and the lower diamond-containing structural film The holes 32 and 321 of the support member 4 are respectively disposed on the layer 32, and the top end and the bottom end of the support member 4 pass through the through holes 211 and 221 and the through holes 311 and 321 respectively, respectively The bottom surface of the upper cover 11 and the top surface of the lower cover 12. Thus, the support member 4 can constitute a reinforcing structure of the casing 1 of the temperature equalizing plate, which can prevent the casing 1 from being deformed by the vaporization pressure generated by the working fluid during heat absorption. By the above-mentioned components, it is possible to implement the creation of the temperature equalizing plate in a single 10121145^ single number A0101 1? 〇 / it 1R hundred 8th page / a total of 16 pages 1012036758-0 M443873 hot electronic component 5, the The casing 1 of the temperature equalizing plate can be disposed between the electronic component 5 and a heat sink 6, so that the top surface of the upper cover of the casing 1 is in contact with the bottom surface of the heat sink 6, and the bottom surface of the lower cover 12 of the casing 1 The electronic component 5 can be a computer central processing unit, a north bridge chip, a graphic video array or a high-power light-emitting diode. The heat sink 6 can be made of metal such as copper or aluminum with high thermal conductivity. The material is made to provide a larger heat dissipation area to instantly dissipate the thermal energy generated by the electronic component 5 to the environment; the lower cover 12, the lower capillary structure layer 22 and the lower diamond-containing structural film layer 32 are adjacent to the electronic component 5 The heat source forms a heat source region (evaporation region) of the temperature equalization plate, and the upper cover 11, the upper capillary structure layer 21 and the diamond-containing structure film layer 31 are adjacent to the heat sink 6 to form a heat dissipation zone (condensation zone) of the temperature equalization plate. In use, the thermal energy generated by the operation of the electronic component 5 is first absorbed by the lower cover 12, and the thermal energy is conducted into the chamber 10 via the capillary structure layer 22 under the heat source region and the underlying diamond-containing structural film layer 32. During the working fluid; during the process, since the diamond-containing structure film layer 32 has high thermal conductivity and the working fluid is a liquid having a low boiling point, the external heat energy can be rapidly transmitted to the bottom of the chamber 10 via the underlying diamond-containing structural film layer 32. The working fluid causes the working fluid to rapidly absorb the thermal energy and then evaporates rapidly to vaporize to generate steam; it is well known that when the liquid undergoes a phase change, the heat transfer coefficient is usually tens or even hundreds of times when no phase change occurs, so the work The conduction resistance of the vapor formed by the fluid within the chamber 10 is nearly negligible, causing the vapor formed by the working fluid to rapidly fill the entire chamber 10. When the vapor formed by the working fluid convects to the top of the chamber 10 and contacts the diamond-containing structural film layer 31 and the upper capillary structure layer 21 on the heat dissipating region, the film structure 31 containing the diamond-containing structure has high thermal conductivity. HU21145#单号A〇101 Page 9/16 pages 1012036758-0 M443873 can, therefore, the diamond-containing structural film layer 31 can rapidly absorb the heat energy contained in the steam formed by the working fluid, and the heat energy can be exchanged The capillary structure layer 21 and the upper cover 11 are rapidly conducted to the heat sink 6, so that thermal energy is discharged through the top layer of the chamber 10. At the same time, the working fluid forms steam on the upper capillary structure layer 21 and the diamond-containing structural film layer. The condensation returns to a liquid state, and the upper capillary structure layer 21, the diamond-containing structural film layer 31, the lower capillary structure layer 22, and the lower diamond-containing structural film layer 32 are returned to the cavity along both sides of the chamber 10. The heat source region of the bottom layer of the chamber 10 is repeatedly subjected to suction and heat removal cycles; since the upper capillary structure layer 21 and the lower capillary structure layer 22 have a large number of gaps, capillary action can be generated. , The cause of the working fluid is condensed to reflux and refluxed for providing channel ilk. The water jacket test data of this creation temperature plate and the traditional temperature plate are shown in the following list 1: 90W 150W 180W Rc/a Performance difference % Rc/a Performance difference % Rc/a Performance difference % Traditional temperature plate 0.217 ·· 0.198 _ _ 0.193 · The average temperature plate of the invention 0.195 0.101 0.181 0.086 0.174 0.098 Table 1
[0006] 請參閱圖4所示，揭示出圖1實施例之水套測試數據之折 線圖，說明表1之本創作均溫板與傳統均溫板之水套測試 數據的分佈狀況，其中可清楚看出，本創作均溫板之散 熱能力明顯高於傳統均溫板。 藉由上述，本創作利用所述上含鑽石組織結構薄膜層31 10121145#單編號 A〇101 第10頁/共16頁 1012036758-0 M443873 與下含鑽石組織結構薄膜層32具有之高熱傳導性能的特 性，有效地將發熱電子元件5所產生之熱能即時傳導至散 熱片6而散發至外界，並結合均溫板内工作流體之相變化 作用而具有之良好熱傳導特性，綜合達到有效減小熱阻 之功效，達到將熱能從電子元件5經由均溫板快速且均勻 地傳導至散熱片6而即時散熱之目的，熱傳導特性十分優 異，並大幅提升熱傳導之效率，有效解決高發熱能電子 元件5之散熱問題。 據此，以進一步提升上述先前技術中，傳統均溫板之金 屬材料受制於材料本身有限之熱傳導性的熱傳導效率。 同時，所述上毛細結構層21、下毛細結構層22、上含鑽 石組織結構薄膜層31與下含鑽石組織結構薄膜層32還為 冷凝後之工作流體提供回流之毛細力及流道。 綜上所陳，僅為本創作之較佳實施例而已，並非用以限 定本創作；凡其他未脫離本創作所揭示之精神下而完成 的等效修飾或置換，均應包含於後述申請專利範圍内。 【圖式簡單說明】 [0007] 圖1是本創作較佳實施例的剖示圖； 圖2是圖1之局部放大剖示圖； 圖3是圖2之局部放大剖示圖； 圖4是圖1實施例之水套測試數據之折線圖。 【主要元件符號說明】 [0008] 1 殼體 10 腔室 11 上蓋 體1145#單編號删1 1012036758-0 第11頁/共16頁 M443873 12 下蓋 121凹槽 21 上毛細結構層 211、221 通孔 22 下毛細結構層 31 上含鑽石組織結構薄膜層 311、321 穿孔 32 下含鑽石組織結構薄膜層 4 支撐件 5 電子元件 6 散熱片[0006] Referring to FIG. 4, a line diagram of the water jacket test data of the embodiment of FIG. 1 is disclosed, and the distribution of the water jacket test data of the created uniform temperature plate and the conventional uniform temperature plate of Table 1 is illustrated. It is clear that the heat dissipation capability of the uniform temperature plate of this creation is significantly higher than that of the conventional temperature equalization plate. By the above, the present invention utilizes the above-mentioned diamond-containing structural film layer 31 10121145# single number A 〇 101 page 10 / total 16 pages 1012036758-0 M443873 and the lower diamond-containing structural film layer 32 has high heat conduction properties. The utility model effectively transmits the heat energy generated by the heat-generating electronic component 5 to the heat sink 6 and radiates to the outside, and combines with the phase change action of the working fluid in the temperature equalizing plate to have good heat conduction characteristics, and comprehensively achieves effective reduction of thermal resistance. The utility model achieves the purpose of instantaneously dissipating heat energy from the electronic component 5 through the temperature equalizing plate to the heat sink 6 quickly and uniformly, has excellent heat conduction characteristics, greatly improves the efficiency of heat conduction, and effectively solves the high heat generating electronic component 5 cooling problem. Accordingly, in order to further enhance the above prior art, the metal material of the conventional temperature equalization plate is subject to the heat conduction efficiency of the material itself having limited thermal conductivity. At the same time, the upper capillary structure layer 21, the lower capillary structure layer 22, the diamond-containing structure film layer 31 and the lower diamond-containing structure film layer 32 also provide reflowing capillary force and flow path for the condensed working fluid. In summary, it is only a preferred embodiment of the present invention, and is not intended to limit the present invention; any equivalent modification or replacement that is not done in the spirit of the present disclosure should be included in the patent application described later. Within the scope. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a preferred embodiment of the present invention; FIG. 2 is a partially enlarged cross-sectional view of FIG. 1; FIG. 3 is a partially enlarged cross-sectional view of FIG. Figure 1 is a line drawing of the water jacket test data of the embodiment of Figure 1. [Main component symbol description] [0008] 1 Housing 10 Chamber 11 Upper cover 1145# Single number deletion 1 1012036758-0 Page 11/16 M443873 12 Lower cover 121 groove 21 Upper capillary structure layers 211, 221 The lower capillary structure layer 31 of the hole 22 contains the diamond structure structure film layer 311, 321 perforation 32 the diamond structure film layer 4 under the support member 5 the electronic component 6 the heat sink
1()121145#單编號A0101 , 第12頁/共16頁 1012036758-01()121145#单号A0101 , Page 12 of 16 1012036758-0