JP3242525U - Integrated vapor chamber - Google Patents

Abstract

A one-piece vapor chamber is provided. An integrated vapor chamber has a metallic top cover, a metallic bottom cover, a working space, a capillary structure, and a working fluid. The metallic top cover has a condensing inner surface. The condensing inner surface has a plurality of upper grooves arranged parallel to each other and a plurality of support structures protruding between the grooves. The metallic bottom cover has an endothermic outer surface and an evaporative inner surface. The heat absorbing outer surface has at least one recess for receiving a heat generating component. The evaporative inner surface has a plurality of lower grooves arranged parallel to each other. The working space is an airtight space formed by joining the top frame of the metal top cover and the bottom frame of the metal bottom cover. The plurality of support structures protrude from the condensation inner surface and abut between the lower grooves of the evaporation inner surface to support the working space. A capillary structure is located in the lower groove. A working fluid resides in the working space and capillary structure. [Selection drawing] Fig. 5B

Description

The present invention relates to vapor chambers, in particular integrated vapor chambers.

High-power electronic components are a new generation of semiconductor components. With the spread of 5G communication and artificial intelligence, data center servers are required to operate at higher frequencies and have more functions. However, high power densities inevitably generate large amounts of heat when high power electronic components or chip processors supporting high speed communication and processing operate. Due to the increased amount of heat generated, if the heat accumulated in the electronic components is not removed efficiently and immediately, it will have a significant impact on the operational reliability of the electronic components, thereby limiting the usability of the electronic components. Therefore, a more efficient cooling system or module must be utilized to quickly remove the heat so as to ensure stable operation of the chip.

With the development of 5G communication, small chip packages are expected to become the mainstream of future manufacturing processes. Therefore, international manufacturers such as Intel, TSMC, ASE, AMD, ARM, Microsoft, Qualcomm, etc. have declared the creation of the UCIe (Universal Chiplet Interconnect Express) industry alliance, The chip is integrated into a small chip package, aiming for faster computing speed. The integration of multiple small chips is expected to increase the heat generated by the chip's operations, and the efficiency of the heat dissipation system cannot be improved. cause instability. The conventional heat dissipation system adheres a metal protective case with good thermal conductivity to the heat dissipating electronic components (e.g. CPU, GPU) through heat dissipating grease, spreads the heat throughout the metal protective case, and attaches the fin heat sink to the heat dissipating grease. It adheres to a metal protective case via a high-speed fan or water cooling system to improve the heat dissipation of the heatsink. However, the operation speed of electronic components is increasing rapidly, and the above heat dissipation method cannot immediately remove a large amount of heat generated by the operation of electronic components. Therefore, the new generation heat dissipation module introduces a vapor chamber with high heat dissipation efficiency between the metal protective case and the heat sink to instantly remove the heat generated by the electronic components.

Vapor chambers are currently the most efficient heat transfer method for heat dissipation, and the large amount of heat generated by the phase change of the working fluid in its closed working chamber (i.e. rapid vaporization and condensation of the working liquid in the high vacuum chamber). Using the latent heat of vaporization, it can achieve the heat transfer efficiency of more than 10000W/(m ² ∙ ℃), which is dozens of times that of conventional air convection or liquid convection, and achieve the purpose of rapid heat dissipation. And, since the thickness of the vapor chamber as a whole is only about 3.0 mm, it is widely used in thin mobile devices and thin notebook computers.

However, when a large amount of heat is generated from the electronic components, the heat is first conducted and dispersed to the metal protective case through the heat dissipation grease, and then conducted and removed to the vapor chamber through the heat dissipation grease. The heat dissipation efficiency of the heat dissipation grease is much lower than that of the general metal protective case and the vapor chamber, and it becomes the maximum heat resistance in the heat dissipation system, greatly reducing the heat dissipation efficiency of the vapor chamber. In addition, in order to closely conduct heat to the electronic components, the metal protective case is mostly made of materials with high hardness and resistance to deformation (such as aluminum-magnesium alloys or other alloys). . Since pure copper, which is soft and has high thermal conductivity, cannot be used to make a metal protective case, thermal resistance occurs in the entire heat dissipation system. In view of the above problems, the present invention provides an integrated vapor chamber with improved heat dissipation efficiency. A vapor chamber with high hardness is manufactured by cold forging pure copper, and recesses are provided on the heat absorption surface of the vapor chamber. The recess is provided to accommodate an electronic component and is in direct contact with the electronic component. Instead of the traditional metal protective case and vapor chamber, the metal sheet is integrally forged to form an integrated vapor chamber, which avoids the thermal resistance that occurs at the interface between the electronic components and the vapor chamber, and improves the heat dissipation efficiency. .

The integrated vapor chamber of the present invention can not only be used for heat dissipation of a single electronic component, but also can be used for a small chip package for 5G communication that integrates multiple small chips. A plurality of storage spaces having shapes corresponding to the shapes of the chips are provided on the heat absorbing surface of the vapor chamber, and the protective case of the multi-chip and the vapor chamber are integrally molded, so that the vapor chamber directly contacts the chip group. Therefore, the heat transfer efficiency is improved without using heat dissipation grease as a medium. Therefore, the integrated vapor chamber of the present invention can also be used for heat dissipation of multiple chips in mobile devices.

Also, the integrated vapor chamber of the present invention is processed and formed by cold forging a metal sheet (eg, copper) and then finished by CNC machining. Since the metal does not need to be heated and annealed in the forging process, there are no pores or coarsening due to annealing in the crystal grain structure inside the metal after forging, and a decrease in thermal conductivity can be avoided. In addition, since there is no heating process, the grain structure inside the metal processed by cold forging maintains high density, and the forged metal has high rigidity and high density. Also, metals produced by cold forging have been measured to have higher thermal conductivity and thermal diffusivity.

However, when a large amount of heat is generated from the electronic components, the heat is first conducted and dispersed to the metal protective case through the heat dissipation grease, and then conducted and removed to the vapor chamber through the heat dissipation grease. The heat dissipation efficiency of heat dissipation grease is much lower than that of the general metal protective case and vapor chamber, and it becomes the maximum heat resistance in the heat dissipation system, greatly reducing the heat dissipation efficiency of the vapor chamber. In addition, in order to closely conduct heat to the electronic components, the metal protective case is mostly made of materials with high hardness and resistance to deformation (such as aluminum-magnesium alloys or other alloys). Since pure copper, which is soft and has high thermal conductivity, cannot be used as a metal protective case, thermal resistance occurs in the entire heat dissipation system. In view of the above problems, the present invention provides an integrated vapor chamber with improved heat dissipation efficiency. A vapor chamber with high hardness is manufactured by cold forging pure copper, and recesses are provided on the heat absorption surface of the vapor chamber. The recess is provided to accommodate an electronic component and is in direct contact with the electronic component. Instead of the traditional metal protective case and vapor chamber, integrally forging a metal sheet to form an integral vapor chamber can avoid thermal resistance caused by dissimilar interfaces between the electronic components and the vapor chamber, Improve heat dissipation efficiency.

The integrated vapor chamber of the present invention can not only be used for heat dissipation of a single electronic component, but also can be used for a small chip package for 5G communication that integrates multiple small chips. By providing a plurality of storage spaces corresponding to the shape of the chips on the heat absorption surface of the vapor chamber and integrally molding the multi-chip protective case and the vapor chamber, the vapor chamber is in direct contact with the chip group. It is possible to improve heat conduction efficiency without using heat dissipation grease. Therefore, the integrated vapor chamber of the present invention can also be used for heat dissipation of multiple chips in mobile devices.

Also, the integrated vapor chamber of the present invention is processed and formed by cold forging a metal sheet (eg, copper) and then finished by CNC machining. Since the metal does not need to be heated and annealed in the forging process, there are no pores or coarsening due to annealing in the crystal grain structure inside the metal after forging, and a decrease in thermal conductivity can be avoided. In addition, since there is no heating process, the grain structure inside the metal processed by cold forging maintains high density, and the forged metal has high rigidity and high density. Also, metals produced by cold forging have been measured to have higher thermal conductivity and thermal diffusivity.

One embodiment of the present invention provides an integrated vapor chamber. The integrated vapor chamber has a metallic top cover, a metallic bottom cover, a working space, a capillary structure, and a working fluid. The metallic top cover has a heat dissipating outer surface and a condensing inner surface. A top frame with a suitable height is provided around the condensing inner surface. The top frame has a top channel groove. The condensing inner surface has a plurality of upper grooves arranged parallel to each other and a plurality of support structures protruding between the grooves. The metallic bottom cover has an endothermic outer surface and an evaporative inner surface. The heat absorbing outer surface has at least one recess for receiving a heat generating component. A bottom frame with a suitable height is provided around the inner evaporative surface. The bottom frame has a bottom channel groove. The evaporative inner surface has a plurality of lower grooves arranged parallel to each other. The working space is an airtight space formed by joining the top frame of the metal top cover and the bottom frame of the metal bottom cover. The condensing inner surface of the metallic top cover and the evaporating inner surface of the metallic bottom cover face each other. The upper groove and the lower groove are arranged to correspond to each other. The plurality of support structures protrude from the condensation inner surface and abut between the lower grooves of the evaporation inner surface to support the working space. The suction channel is formed by joining the top channel groove and the bottom channel groove to suck air in the working space. A capillary structure is located in the lower groove. A working fluid resides in the working space and capillary structure.

The integrated vapor chamber of the present invention has better heat dissipation efficiency, durability and reliability than the prior art.

1 is a schematic diagram of a conventional heat dissipation module; FIG. 1 is a schematic diagram of a conventional heat dissipation module; FIG. 1 is a schematic diagram of a conventional heat dissipation module; FIG. 1 is a schematic diagram showing the structure of an integrated vapor chamber according to one embodiment of the present invention; FIG. 1 is a schematic diagram showing the structure of an integrated vapor chamber according to one embodiment of the present invention; FIG. 1 is a schematic diagram showing the structure of an integrated vapor chamber according to one embodiment of the present invention; FIG. FIG. 4 is a schematic diagram showing the structure of the metal top cover of the integrated vapor chamber according to one embodiment of the present invention; FIG. 4 is a schematic diagram showing the structure of the metal top cover of the integrated vapor chamber according to one embodiment of the present invention; FIG. 4 is a schematic diagram of the structure of the metal bottom cover of the integrated vapor chamber according to one embodiment of the present invention; FIG. 4 is a schematic diagram of the structure of the metal bottom cover of the integrated vapor chamber according to one embodiment of the present invention; FIG. 5 is a schematic diagram showing the structure of the metal bottom cover of the integrated vapor chamber according to another embodiment of the present invention; FIG. 5 is a schematic diagram showing the structure of the metal bottom cover of the integrated vapor chamber according to another embodiment of the present invention; FIG. 5 is a schematic view of using the metal bottom cover of the integrated vapor chamber according to another embodiment of the present invention;

Hereinafter, embodiments of the integrated vapor chamber of the present invention will be described with reference to the drawings. The dimensions of the parts in each drawing are enlarged or reduced as appropriate to facilitate understanding. Terms used in the specification and/or claims have the same meaning as would be understood by one of ordinary skill in the art. In the examples below, the same parts are denoted by the same reference numerals. As used herein, the term "about" indicates ±10%, ±5%, ±1% or ±0.5% of a value or range, ie within a margin of error. In this specification, other than in the examples, all ranges, quantities, numerical values, and percentages are modified by "about" unless stated otherwise. As such, any numerical values or parameters set forth in the specification and claims are approximations and may be changed as desired.

Description will be made with reference to FIG. A conventional electronic component (eg, CPU or GPU) heat dissipation module 10 includes a substrate 100 , an electronic component 200 , a metal protective case 300 and a heat sink 500 . In order to improve heat dissipation, the heat-generating electronic component 200 is adhered to the metal protective case 300 via heat dissipation grease 400 , and the heat sink 500 is adhered to the outer surface of the metal protection case 300 via heat dissipation grease 400 .

As the computing power of electronic components improves, it is often the case that conventional heat dissipation modules cannot effectively dissipate heat. In order to further improve the heat dissipation capability, the new generation heat dissipation module is equipped with a vapor chamber 600, which has heat dissipation efficiency several tens of times higher than convection heat dissipation. The conventional heat dissipation module 20 shown in FIG. Apply thermal grease 400 to the two to firmly bond them. However, compared with the conventional heat dissipation module, since one layer of the heat dissipation grease 400 having a low thermal conductivity is added to the heat dissipation system, the heat resistance increases, and the heat dissipation efficiency of the system as a whole cannot be exhibited.

Description will be made with reference to FIG. Another type of heat dissipation module 30 for avoiding an increase in thermal resistance is that the vapor chamber 600 is directly attached to the electronic component 200 via the heat dissipation grease 400, and when heat is generated from the electronic component 200, the heat is dissipated through the heat dissipation grease. 400 to the vapor chamber 600 with high heat radiation efficiency. When the vapor chamber 600 absorbs heat, the working fluid in its interior space rapidly evaporates to form vapor, which rises rapidly and contacts the cold surface at the top of the vapor chamber 600 connected to the heat sink 500. It condenses on the surface and releases a large amount of heat through its phase change. The large amount of heat is transferred to the heat sink 500 through the heat dissipation grease 400, and further dissipated by air convection. A problem with this method is that since the general vapor chamber 600 has a total thickness of about 3 mm, the vapor chamber 600 made of a soft material such as pure copper is likely to be deformed or warped after long-term use. In that case, the electronic component 200 and the vapor chamber 600 cannot fit tightly, and the heat cannot be efficiently conducted, increasing the thermal resistance. In view of the above problems, the inventors of the present invention manufactured a vapor chamber with high hardness and resistance to shape change by cold forging, and furthermore, provided a space for housing electronic components on the heat absorbing surface of the bottom cover of the vapor chamber. It is provided to wrap the electronic component 200 and improve heat dissipation efficiency.

An integrated vapor chamber 80 according to one embodiment of the present invention is described with reference to FIGS. 4 and 5A-5B. The integrated vapor chamber 80 has a metal top cover 800, a metal bottom cover 900, a working space 1020, a suction channel 1080, a capillary structure 1040, and a working fluid. Metal top cover 800 has a heat dissipating outer surface 810 and a condensing inner surface 820 . A top frame 880 having a suitable height is provided around the condensing inner surface 820 . The top frame 880 has a top channel 881 groove. Condensing inner surface 820 has a plurality of upper grooves 830 arranged parallel to each other and a plurality of support structures 840 protruding between the grooves. Metal bottom cover 900 has an endothermic outer surface 910 and an evaporative inner surface 920 . The heat absorbing outer surface 910 has at least one recess 940 for housing a heat generating component. A bottom frame 980 with a suitable height is provided around the evaporative inner surface 920 . Bottom frame 980 has a bottom channel 981 groove. The evaporative inner surface 920 has a plurality of lower grooves 930 arranged parallel to each other. The working space 1020 is an airtight space formed by joining the top frame 880 of the metal top cover 800 and the bottom frame 980 of the metal bottom cover 900 together. The condensing inner surface 820 of the metallic top cover 800 and the evaporating inner surface 920 of the metallic bottom cover 900 face each other. The upper groove 830 and the lower groove 930 are arranged to correspond to each other. The support structures 840 protrude from the condensation inner surface 820 and abut between the lower grooves 930 of the evaporation inner surface 920 to support the working space 1020 . The suction channel 1080 is formed by joining the top channel groove 881 and the bottom channel groove 981 and sucks air in the working space 1020 . Capillary structure 1040 is located within lower groove 930 . A working fluid resides in the working space 1020 and the capillary structure 1040 . In one embodiment, the top frame 880 and bottom frame 980 of the integrated vapor chamber 80 further have weld grooves 1010 . The weld groove 1010 is used to weld the metal top cover 800 and the metal bottom cover 900 together to form the vapor chamber 80 .

The metal top cover 800 of the integrated vapor chamber of the present invention is described with reference to FIGS. 6A and 6B. In this embodiment, the feature of the integrated vapor chamber of the present invention is the shape and structure of the metal top cover. For example, cold forging a sheet of metal in situ to form the support structure, rather than sintering or bonding, i.e. integrally forging a sheet of metal to the shape and structure, and finishing with CNC machining. to form the metal top cover. Specifically, the plurality of support structures 840 for the condensing inner surface 820 of the metal top cover 800 of the integrated vapor chamber of the present embodiment are formed by forming and then sinter bonding the metal top cover 800, rather than forming and then sinter bonding. It is not sintered and joined to the condensation inner surface 820 , but is directly formed on the condensation inner surface 820 by cold forging and integrated with the condensation inner surface 820 of the metallic top cover 800 .

The metal bottom cover 900 of the integrated vapor chamber of the present invention will be described with reference to FIGS. 7A and 7B. In this embodiment, the feature of the integrated vapor chamber of the present invention is the shape and structure of the bottom cover. The metal bottom cover 900, heat absorbing outer surface 910, and recess 940 are formed by cold forging a single sheet of metal, and then finished by CNC machining. In the case of press working, recesses are formed on one side of the metal sheet and projections are formed on the opposite side. In contrast, the recesses 940 of the heat absorbing outer surface 910 of the cold forged metal bottom cover 900 are recessed from the heat absorbing outer surface 910 toward the evaporating inner surface 920 but do not protrude from the corresponding evaporating inner surface 920 .

The method of manufacturing the integrally molded top cover of the integral vapor chamber of the present invention includes a method of performing an etching process or a combined machining process (e.g., a combined process using a press and a milling machine) followed by sintering. be done. The etching process can form more complicated structures and is used for products that are difficult to manufacture with conventional processing, but it takes time and the processed surface is not smooth, so secondary processing is required. be. Since the compound machining process uses a conventional method, it can be produced without new development, but it requires a large number of processes and a long production time.

The integrated vapor chamber of the present invention forms the shape and structure of the metal top cover 800 and the metal bottom cover 900 by cold forging. Unlike etching or compound machining processes, cold forging involves placing a metal sheet (or metal block) to be worked into a female die and continuously forging the male die at room temperature. In the forging process of the cold forging, there is no need to heat soften and anneal the metal as in the press process. A decrease in conductivity can be avoided. In addition, since there is no heating process, the crystal grain structure inside the metal processed by cold forging maintains a high density, and defects such as internal voids can be reduced. Forged metal has a smooth surface, high rigidity and high density, and has high adhesion to electronic parts, so that thermal resistance due to poor contact can be reduced. Also, the metal after forging has been measured to have higher thermal conductivity and thermal diffusivity than the metal before forging. That is, the heat dissipation efficiency of the integrated vapor chamber of the present invention is superior to that of the conventional one.

The metal top cover 800 and the metal bottom cover 900 of the integrated vapor chamber of one embodiment of the present invention are made by cold forging a metal sheet with high thermal conductivity and thermal diffusivity (such as pure copper). Integrate into the structure.

In another embodiment, the metal top cover 800 and metal bottom cover 900 of the integrated vapor chamber are made of pure copper with high thermal conductivity and thermal diffusivity. Vickers hardness of the metal top cover 800 and the metal bottom cover 900 manufactured by cold forging is about 90HV to 120HV, for example, about 95HV to 120HV, 100HV to 120HV, 105HV to 120HV, 110HV to 120HV, 115HV to 120HV. , preferably 115HV to 117HV.

In another embodiment, the metal top cover 800 and metal bottom cover 900 of the integrated vapor chamber are made of pure copper with high thermal conductivity and thermal diffusivity. The thermal conductivity of the metal top cover 800 and the metal bottom cover 900 manufactured by cold forging is about 400W/(m∙K) to 430W/(m∙K), for example, about 405W/( m∙K)~430W/(m∙K), 410W/(m∙K)~430W/(m∙K), preferably 420W/(m∙K)~430W /(m∙K).

In another embodiment, the metal top cover 800 and metal bottom cover 900 of the integrated vapor chamber are made of pure copper with high thermal conductivity and thermal diffusivity. The thermal diffusivity of the metal top cover 800 and the metal bottom cover 900 manufactured by cold forging is about 90 mm ² /sec to 120 mm ² /sec, for example about 95 mm ² /sec to 120 mm ² /sec, 100 mm ² /sec. 120 mm ² /sec, 105 mm ² /sec to 120 mm 2 /sec, 110 ^{mm 2 /} sec to 120 mm 2 /sec, 115 ^{mm 2 /} sec to 120 mm ² /sec, preferably 115 mm ² /sec to 117 mm ² /sec.

The values of Vickers hardness, thermal conductivity, thermal diffusivity, etc. are physical properties of pure copper after cold forging, and are different from properties of materials formed by other processing means. That is, the specific thermal conductivity and thermal diffusivity ranges are also one of the technical features of the present invention. In one embodiment of the integrated vapor chamber of the present invention, the metal top cover 800 and the metal bottom cover 900 of said integrated vapor chamber are made of pure copper. We asked a third-party measuring agency (YUANHE) to measure the material properties (physical properties such as thermal conductivity and thermal diffusivity) after cold forging, and used conventional composite processing processes (conventional press process and CNC The results are shown in Table 1.
[Table 1]

As can be seen from Table 1, the integrated vapor chamber manufactured by cold forging has better heat dissipation characteristics than the conventional composite processing, taking advantage of the characteristics of cold forging. The degree of improvement in these physical properties is related to the number of forgings and the degree of striking force in cold forging. Therefore, the numerical value after cold forging is superior to that of conventional processing.

A metal bottom cover 901 of another embodiment of the integrated vapor chamber of the present invention will be described with reference to FIGS. 8A and 8B. The heat absorbing outer surface 910 of the metal bottom cover 901 further has a plurality of recesses 940 . The plurality of recesses 940 are recessed from the heat absorbing outer surface 910 toward the evaporating inner surface 920 to accommodate the plurality of electronic components, but do not protrude from the evaporating inner surface 920 . A metal bottom cover 901 of another embodiment of the integrated vapor chamber of the present invention will be described with reference to FIG. As shown in FIG. 9, the plurality of recesses 940 have the same or different shapes and volumes. Depending on the size and shape of each small chip in the chip group on the substrate, multiple electronic components with the same or different shapes and volumes, such as the integrated vapor chamber of the 5G server chip group (shown in FIG. 8A) at the same time Customize and fabricate a plurality of recesses 940 to accommodate. By adding a thermally conductive material with high thermal conductivity (e.g., heat dissipation grease or graphite sheet) between the electronic component and the heat absorbing outer surface 910, the thermal resistance due to slight unevenness existing on the contact surface is reduced, and the external When the electronic components are accommodated in the plurality of recesses 940 of the heat absorbing outer surface 910, the electronic components are in close contact with the heat absorbing outer surface 910, thereby improving heat dissipation efficiency. In either embodiment of the integral vapor chamber of the present invention, the metal bottom covers 900 and 901 are integrally forged by cold forging. In one embodiment, the pure copper metal bottom cover, which is manufactured by integrally forging pure copper with high thermal conductivity and thermal diffusivity by cold forging, has higher hardness and rigidity than those manufactured by conventional processing processes. Tall and not easily deformed.

In an embodiment of the integrated vapor chamber of the present invention, the support structure is columnar.

In an embodiment of the integrated vapor chamber of the present invention, the working fluid is pure water.

In an embodiment of the integrated vapor chamber of the present invention, the air pressure in the working space is below 1×10 ⁻³ Torr, below 1×10 ⁻⁴ Torr, preferably below 1×10 ⁻⁵ Torr.

The present invention is not limited to the above embodiments. Equivalent modifications made on the basis of the integral vapor chamber of the above embodiment are included in the present invention.

In addition, in order to make the electronic product thinner, the heat dissipation module often adds a protective case made of additive metal between the vapor chamber and the electronic component. The vapor chamber has a thickness of about 3 mm and is generally made of pure copper, which has high thermal conductivity and is soft. Because deformation at high temperature for a long time may affect heat dissipation efficiency, metal protective cases are generally made of aluminum-magnesium alloy, which has high rigidity and lower heat conduction efficiency than pure copper. . The metal protective case conducts heat to the vapor chamber through the heat dissipation grease to dissipate the heat. In contrast, the integrated vapor chamber of the present invention has a metal bottom cover instead of the metal protective case, thus eliminating the thermal resistance of the aluminum-magnesium alloy and thermal grease. Therefore, the heat dissipation efficiency is better than that of the conventional heat dissipation module. Also, compared to other conventional processing methods, cold forging allows the grain structure of the material to remain denser and reduce defects such as internal voids. The material thus produced has excellent mechanical properties such as higher strength, deformation resistance, fatigue resistance, etc., and improves heat conduction efficiency and heat diffusion efficiency. The manufactured integrated vapor chamber has better heat dissipation efficiency, durability and reliability than heat dissipation modules of similar structure.

As can be seen from the above, the present invention has advantages over the prior art, which cannot be easily conceived by those skilled in the art. Therefore, it has inventive step and industrial applicability.

The present invention is not limited to the above contents. All equivalent changes made within the spirit and scope of the present invention are included in the present invention.

10, 20, 30 prior art heat dissipation module 80 integrated vapor chamber 100 substrate 200 electronic component 300 metal protective case 400 thermal paste 500 heat sink 600 vapor chamber (prior art)
800 Metal top cover 810 Heat dissipation outer surface 820 Condensation inner surface 830 Upper groove 840 Support structure 880 Top frame 881 Top channel grooves 900, 901 Metal bottom cover 910 Heat absorption outer surface 920 Evaporation inner surface 930 Lower groove 940 Recess 980 Bottom frame 981 Bottom channel groove 1010 Welding groove 1020 working space 1040 capillary structure 1080 suction channel

Claims (12)

having a metal top cover, a metal bottom cover, a working space, a capillary structure, and a working fluid,
the metallic top cover has a heat dissipating outer surface and a condensing inner surface;
a top frame having a suitable height is provided around the condensation inner surface;
the top frame has a top channel groove,
the condensing inner surface has a plurality of upper grooves arranged parallel to each other and a plurality of support structures protruding between the grooves;
the metallic bottom cover has an endothermic outer surface and an evaporative inner surface;
the heat-absorbing outer surface has at least one recess for receiving a heat-generating component;
A bottom frame having a suitable height is provided around the evaporation inner surface,
the bottom frame has a bottom channel groove,
The evaporation inner surface has a plurality of lower grooves arranged parallel to each other,
The working space is an airtight space formed by joining the top frame of the metal top cover and the bottom frame of the metal bottom cover,
the condensation inner surface of the metallic top cover and the evaporation inner surface of the metallic bottom cover face each other;
The upper groove and the lower groove are arranged to correspond to each other,
The plurality of support structures protrude from the condensation inner surface and abut between the lower grooves of the evaporation inner surface to support the working space;
The capillary structure is located within the lower groove,
An integrated vapor chamber, wherein the working fluid resides in the working space and the capillary structure. The metal top cover and the support structure are formed by integrally forging a metal sheet by cold forging,
2. The integral vapor chamber of claim 1, wherein the metal bottom cover is integrally forged from a metal sheet by cold forging. the metal sheet is pure copper;
3. The integrated vapor chamber of claim 2, wherein the Vickers hardness of said top cover and said bottom cover is about 90HV to 120HV. the metal sheet is pure copper;
3. The integrated vapor of claim 2, wherein the thermal conductivity of the top cover and the bottom cover is about 400W/(m∙K) to 430W/(m∙K). Chamber. 3. The integrated vapor chamber of claim 2, wherein the thermal diffusivity of the top cover and the bottom cover is about 90 mm ² /sec to 120 mm ² /sec. 3. The integral vapor chamber of claim 2, wherein said support structure is columnar. 3. The integral vapor chamber of claim 2, wherein said recesses are multiple and accommodate multiple electronic components. 8. The integral vapor chamber of claim 7, wherein each recess has the same or different shape and volume and accommodates a plurality of electronic components having the same or different shape and volume simultaneously. 3. The integral vapor chamber of claim 2, wherein said recesses are recessed from said heat absorbing outer surface toward said evaporating inner surface, but do not protrude from said corresponding evaporating inner surface. 3. The integrated vapor chamber according to claim 2, wherein the metal top cover and the metal bottom cover are joined by welding after being joined together. 3. The integrated vapor chamber of claim 2, wherein the working fluid is pure water. 3. The integrated vapor chamber as claimed in claim 2, wherein the working space has a pressure of 1×10 ⁻³ Torr or less.

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