TW201350215A - 無電鍍銅合金覆蓋 - Google Patents
無電鍍銅合金覆蓋 Download PDFInfo
- Publication number
- TW201350215A TW201350215A TW102109697A TW102109697A TW201350215A TW 201350215 A TW201350215 A TW 201350215A TW 102109697 A TW102109697 A TW 102109697A TW 102109697 A TW102109697 A TW 102109697A TW 201350215 A TW201350215 A TW 201350215A
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- layer
- providing
- deposit
- filled feature
- Prior art date
Links
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 62
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 147
- 229910052802 copper Inorganic materials 0.000 claims abstract description 147
- 239000010949 copper Substances 0.000 claims abstract description 147
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000007747 plating Methods 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 17
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000005751 Copper oxide Substances 0.000 claims abstract description 11
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 15
- 239000011135 tin Substances 0.000 claims description 15
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 13
- 239000010941 cobalt Substances 0.000 claims description 12
- 229910052718 tin Inorganic materials 0.000 claims description 12
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011572 manganese Substances 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims 8
- 230000000996 additive effect Effects 0.000 claims 8
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 239000000956 alloy Substances 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000203 mixture Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910000531 Co alloy Inorganic materials 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910000914 Mn alloy Inorganic materials 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
- C23C18/1692—Heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
本發明提出於層中提供填充銅特徵部之方法。提供銅沉積以填充位於層中之特徵部。清潔銅沉積物之頂部以移除銅沉積物頂部之銅或氧化銅。提供於銅沉積物頂部上之選擇性的銅合金電鍍。進行銅沉積物和選擇性之銅合金鍍層的退火。
Description
本發明關於在半導體晶圓上形成半導體裝置之方法。更具體而言,本發明關於在低介電常數(低-k)介電層中形成金屬內連線。
形成半導體裝置時,導電金屬內連線置於低k介電層中。此可藉由將銅或銅合金沉積進入蝕刻至低k介電層內之特徵部而達成。銅之沉積可藉由電鍍沉積或無電鍍沉積進行。銅之電遷移增加此等金屬內連線之失效率。隨著特徵部之尺寸減小,電遷移成為更嚴重的問題。
為達成前述內容及符合本發明之目的,提出一種於層中提供填充銅特徵部之方法。提供銅之沉積以填充層中之特徵部。清潔銅沉積物之頂部以移除銅沉積物頂部之銅或氧化銅。提供選擇性的銅合金電鍍於銅沉積物之頂部上。使銅沉積物及選擇性的銅合金鍍層進行退火。
本發明之這些及其它特徵將於以下的本發明之詳細說明並結合下列圖式予以詳細描述。
104‧‧‧步驟
108‧‧‧步驟
112‧‧‧步驟
116‧‧‧步驟
120‧‧‧步驟
124‧‧‧步驟
200‧‧‧堆疊
204‧‧‧基板
208‧‧‧層
212‧‧‧阻障層
216‧‧‧層
220‧‧‧特徵部
224‧‧‧銅沉積物
228‧‧‧銅沉積物224之頂部
232‧‧‧層208之頂部
236‧‧‧銅合金鍍層
240‧‧‧銅合金蓋件
本發明係藉由例示而非限制之方式顯示於隨附圖式中之圖形,且其中相似的參考數字表示相似的元件,且其中:圖1為本發明之實施例的流程圖。
圖2A-圖2F為使用本發明流程所形成的結構之示意圖。
本發明現將參照如隨附圖式中呈現之其若干較佳實施例加以詳述。在以下敘述中,提出許多具體細節以提供對本發明之深入了解。然而對熟悉本技藝者將顯而易見,本發明可在缺少這些具體細節的部份或所有者的情況下實施。在其它情況下,已為人所熟知之程序步驟以及/或是結構將不再詳述,以不非必要地妨礙本發明。
銅接點容易進行電遷移。電遷移可導致銅接點所形成之電路失效。隨著銅接點的尺寸變小,因電遷移而導致的失效增加。本發明之較佳實施例降低由電遷移所引起之失效。
圖1為本發明之實施例的高階流程圖。在此實施例中,於層中提供特徵部(步驟104)。用銅填充特徵部(步驟108)。使用化學機械拋光(CMP)將銅拋光回到特徵部之頂部(步驟112)。清潔特徵部內之銅沉積物的頂部(步驟116)。此導致銅沉積物之頂部低於特徵部之頂部並移除任何位於銅沉積物頂部之氧化銅。提供選擇性的銅合金電鍍於銅沉積物之頂部上(步驟120)。使銅沉積物和銅合金鍍層進行退火(步驟124)。
在本發明之較佳實施例中,於層中提供特徵部(步驟104)。圖2A為具有基板204之堆疊200的橫剖面示意圖,基板204具有層208,層中具有特徵部220。在此範例中,一或更多層216置於基板204和層208之間。在此範例中,具有特徵部220之層208為介電質層。更佳地,層208為低k介電質層,具有小於4.0之k值。在此實施例中,該層為有機矽酸鹽玻璃(OSG,organosilicate glass)。可藉由蝕刻層208形成特徵部。
以銅沉積物填充特徵部(步驟108)。銅沉積物可為純銅或銅合金。圖2B為具有基板204之堆疊200的橫剖面示意圖,基板204具有層208,層中有特徵部220,特徵部係以銅沉積物224加以填充。銅沉積物係較佳地使用電鍍加以提供。在其他實施例中,亦可使用無電鍍銅沉積。在其它實施例中,亦可使用其他的銅沉積處理。在此實施例中,阻障層212在銅沉積之前形成於層208上。在其它實施例中可提供其他步驟以形成或塑形其他層。
使用化學機械拋光將銅拋光回到特徵部之頂部,移除在特徵部之外的過量沉積銅(步驟112)。圖2C為在特徵部之外的過量銅被移除後,堆疊200的橫剖面示意圖。在此實施例中,銅沉積物224之頂部228與堆疊200之層208之頂部232是齊平的。在其它實施例中,銅沉積物224之頂部228與堆疊200之層208的頂部232不是齊平的。在其它實施例中,可使用其他方法以移除在堆疊200上之過量的銅,並暴露出銅沉積物之頂部。
清潔銅沉積物之頂部以將銅或氧化銅從銅沉積物之頂部移除(步驟116)。在此實施例中,酸浴係用於提供銅沉積物的清洗,以移除氧化銅和銅。在此實施例中,酸浴可為有機酸,如檸檬酸或草酸。圖2D為清潔銅沉積物後,堆疊200的橫剖面示意圖。在此實施例中,銅沉積物224之頂部228低於堆疊200的層208之頂部232。酸浴亦可移除層208之頂部232上之過量銅。
選擇性的銅合金電鍍提供位於銅沉積物224頂部之沉積(步驟120)。銅合金鍍層相對於層208之頂部232,係選擇性地沉積於銅沉積物224之頂部228上。此選擇性沉積可使用無電鍍、化學氣相沉積(CVD)、或原子層沉積(ALD)加以提供。銅合金之部份可為銅和錫、鈷、鎳、銦、釕、錸、鎢、鉬、鈀、鎵、鍺、鋅或錳其中至少一種之合金成分。較佳地,該合金成分為至少1%的銅合金。更佳地,該合金成分為至少5-20%的銅合金。較佳地,銅合金為80-99%的銅。更佳地,銅合金為80-95%的銅。無電鍍銅浴之範例提供1-2 g/L的硫酸銅、0.2-0.6 g/L的硫酸鎳、15~20 g/L的檸檬酸鈉、8-12 g/L的次磷酸鈉、以及5-10 g/L的硼酸。NaOH係用於將該浴之pH值調節至pH 9-9.5。該浴之溫度係維持在50℃至80℃之間。圖2E為銅合金鍍層236已被選擇性地沉積於銅沉積物224之頂部228後,堆疊200之橫剖面示意圖。在此實施例中,銅合金鍍層236之頂部延伸超過層208之頂部232。。在一較佳實施例中,銅合金鍍層236之頂部與層208之頂部232是齊平的。
使銅沉積物及銅合金鍍層進行退火(步驟124)。圖2F為銅沉積物224及銅合金鍍層退火後,堆疊200的橫剖面示意圖。在此實施例
中,銅合金鍍層形成退火的銅合金蓋件240於銅沉積物224之頂部上,從而降低電遷移。在其它實施例中,合金穿過進入銅沉積物224以提供改良的銅沉積物特性,如降低電遷移。在此實施例中,退火之實施係於200至450℃之間的溫度,達1至60分鐘之間的時間。更佳地,退火為在250至400℃之間的溫度,達5到30分鐘之間的時間。
在一實施例中,銅合金為銅與錳之合金。在退火期間,吾人相信錳會遷移至銅和介電質介面,以提供較佳的密封給阻障層,同時留下較低電阻的銅合金層與少量的錳以覆蓋銅沉積物。吾人應注意的是,存留在銅合金蓋件中之少量的錳將增加銅合金蓋件之電阻。
在另一實施例中,銅合金鍍層為銅與錸之合金。在此實施例中,在退火期間銅和錸分離,使銅與銅沉積物混合,錸形成錸蓋件於銅沉積物之頂部上。錸蓋件降低電遷移且只些微增加電阻。在一實施例中,後續至銅沉積物的電接點之形成打開錸蓋件,以使錸蓋件不提供任何電阻之增加。
在本發明之另一實施例中,銅合金鍍層為銅和銦之合金。在退火期間,銦和銅分離,其中銦移動至介面。銦密封銅之邊緣,例如緊臨著阻障層以及銅沉積物之頂部。此外,銦移動至銅沉積物之晶粒邊界處。銦將改善阻障層,並在晶粒邊界處和蓋件處降低銅之電遷移。晶粒邊界處的電遷移之減少已被證實其重要性勝過較薄之接點。
在另一實施例中,銅合金鍍層為銅、錫、和錳之合金。在退火期間,錫和錳從銅中分離。錫前往晶粒邊界處,而錳前往介面處並形成蓋件,從而使錫降低在晶粒邊界處之電遷移,且錳減少介面處和銅沉積物之頂部的電遷移並改善介面處,例如於阻障層處。
在另一實施例中,銅合金鍍層為銅、錫、和鈷之合金。在退火期間,銅、錫、和鈷從銅中分離。錫前往晶粒邊界處,且鈷形成蓋件,以使錫降低在晶粒邊界處的電遷移,且鈷降低在銅沉積物之頂部的電遷移。
在另一實施例中,銅合金鍍層為銅、錫、磷、和鈷之合金。在退火期間,錫、磷、鈷從銅中分離。錫前往晶粒邊界,且鈷和磷形成蓋件,以使錫降低在晶粒邊界處的電遷移,且鈷降低在銅沉積物之頂部的電
遷移。另一實施例亦可以添加鎢至合金中。
其它實施例使用銅和鈷的合金,並加入銦、鍺、鎵、鋅和鈀。
由CMP工具至下一個處理工具的轉移時間可提供長達24小時之足夠的等待時間,以形成氧化銅層於銅沉積物之頂部。清潔銅沉積物之頂部將氧化銅移除,從而降低線路電阻。然而,氧化銅之移除亦移除部份之銅,如果銅被替換為另一種金屬,如鈷,此可增加3%-5%之線路電阻。選擇性的銅合金電鍍將受移除之銅取代為銅合金,其在退火期間存留為銅合金,或分離至銅層,使合金材料在退火期間快速通過剩餘之銅沉積物。如果合金成分自銅中分離並在退火期間形成蓋件,則該合金成分蓋件可為超薄以提供較低之電阻。舉例而言,若選擇性之銅合金電鍍提供一個為20 Å厚、具有約20%的合金成分之蓋層,當合金成分分離出來並在退火期間形成蓋件時,合金形成之蓋件為電鍍蓋層之厚度的20%。因此,合金蓋件在退火期間分離出來時將為4 Å厚。
此外,使用無電鍍沉積以進行選擇性地銅合金電鍍可消除突出部,從而降低擴展到小特徵部尺寸時面臨的問題。此外,無電鍍沉積提供了高選擇性,以減少或消除在銅沉積物之頂部上進行沉積時,位於層之頂部上的沉積。使用無電鍍沉積亦使得在進行清洗之酸浴和無電鍍沉積之浴之間的時間很短,因為這些處理可在相同的腔室進行。如此短暫的時間減少了清潔後氧化銅之形成。隨著合金成分之不同,蓋件可減少氧化銅的形成。
本發明雖已透過數個較佳實施例加以說明,但仍有許多落於本發明範疇內之替換、變更、修改及各種置換均等物。亦應注意有許多實施本發明之方法及裝置的替代性方式。因此欲使以下隨附請求項解釋為包含所有落於本發明之真正精神及範疇內的此替換、變更及各種置換均等物。
104‧‧‧步驟
108‧‧‧步驟
112‧‧‧步驟
116‧‧‧步驟
120‧‧‧步驟
124‧‧‧步驟
Claims (20)
- 一種於層中提供填充銅特徵部的方法,包含:提供銅沉積以填充該層中之複數特徵部;清潔銅沉積物之頂部以移除位於該銅沉積物之頂部的銅或氧化銅;提供選擇性的銅合金電鍍於該銅沉積物之頂部上,以及使該銅沉積物及選擇性的銅合金鍍層進行退火。
- 如申請專利範圍第1項之於層中提供填充銅特徵部的方法,更包含在清潔該銅沉積物之頂部前,移除在該層上之過量的銅,以暴露出該銅沉積物之頂部。
- 如申請專利範圍第2項之於層中提供填充銅特徵部的方法,其中該清潔該銅沉積物之頂部的步驟,導致該銅沉積物之頂部低於該層之頂部。
- 如申請專利範圍第3項之於層中提供填充銅特徵部的方法,其中該清潔該銅沉積物之頂部的步驟,包含使該銅沉積物之頂部暴露於酸浴。
- 如申請專利範圍第4項之於層中提供填充銅特徵部的方法,其中該移除在該層上之過量的銅的步驟,包含在清潔該銅沉積物之頂部前,提供該銅沉積物之化學機械抛光。
- 如申請專利範圍第5項之於層中提供填充銅特徵部的方法,其中該提供選擇性的銅合金電鍍的步驟,選擇性地沉積該銅合金鍍層於該銅沉積物之頂部上。
- 如申請專利範圍第6項之於層中提供填充銅特徵部的方法,其中該提供該選擇性的銅合金電鍍的步驟,包含無電鍍沉積、化學氣相沉積、或原子層沉積其中一者。
- 如申請專利範圍第7項之於層中提供填充銅特徵部的方法,其中該提供該選擇性的銅合金電L鍍的步驟包含無電鍍沉積,其步驟包含將該銅沉積物之頂部暴露於無電鍍銅合金沉積浴。
- 如申請專利範圍第8項之於層中提供填充銅特徵部的方法,其中該銅合金鍍層包含銅和錫、鈷、鎳、銦、釕、錸、鎢、鉬、鈀、鎵、鍺、鋅或錳之至少一添加物。
- 如申請專利範圍第9項之於層中提供填充銅特徵部的方法,其中該使該 銅沉積物以及該銅合金進行退火之步驟,形成銅合金蓋層於該銅沉積物之上方。
- 如申請專利範圍第9項之於層中提供填充銅特徵部的方法,其中該使該銅沉積物以及該銅合金進行退火之步驟,導致該銅合金分離為銅及至少一添加物。
- 如申請專利範圍第11項之於層中提供填充銅特徵部的方法,其中該至少一添加物形成蓋層。
- 如申請專利範圍第11項之於層中提供填充銅特徵部的方法,其中該至少一添加物擴散通過該銅至銅障壁介面處。
- 如申請專利範圍第11項之於層中提供填充銅特徵部的方法,其中該至少一添加物擴散通過該銅至銅晶粒邊界處。
- 如申請專利範圍第1項之於層中提供填充銅特徵部的方法,其中該清潔該銅沉積物之頂部的步驟,包含將該銅沉積物之頂部暴露於酸浴。
- 如申請專利範圍第1項之於層中提供填充銅特徵部的方法,其中該提供該選擇性的銅合金電鍍之步驟,包含無電鍍沉積、化學氣相沉積或原子層沉積其中一者。
- 如申請專利範圍第1項之於層中提供填充銅特徵部的方法,其中該提供該選擇性的銅合金電鍍的步驟包含無電鍍沉積,包含將該銅沉積物之頂部暴露於無電鍍銅合金沉積浴。
- 如申請專利範圍第1項之於層中提供填充銅特徵部的方法,其中該銅合金鍍層包含銅和錫,鈷,鎳,銦,釕,錸,鎢,鉬,鈀,鎵,鍺,鋅或錳之至少一添加物。
- 如申請專利範圍第1項之於層中提供填充銅特徵部的方法,其中該使該銅沉積物以及該銅合金進行退火之步驟,導致該銅合金分離成銅及至少一添加物。
- 如申請專利範圍第19項之於層中提供填充銅特徵部的方法,其中該至少一添加物擴散通過該銅至銅晶粒邊界處。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/424,141 US20130240484A1 (en) | 2012-03-19 | 2012-03-19 | Electroless copper alloy capping |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201350215A true TW201350215A (zh) | 2013-12-16 |
Family
ID=49156687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102109697A TW201350215A (zh) | 2012-03-19 | 2013-03-19 | 無電鍍銅合金覆蓋 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20130240484A1 (zh) |
KR (1) | KR20140143189A (zh) |
TW (1) | TW201350215A (zh) |
WO (1) | WO2013142207A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8969197B2 (en) * | 2012-05-18 | 2015-03-03 | International Business Machines Corporation | Copper interconnect structure and its formation |
US20150206798A1 (en) * | 2014-01-17 | 2015-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect Structure And Method of Forming |
KR20160047156A (ko) | 2014-10-22 | 2016-05-02 | 현대자동차주식회사 | 변속 인지 장치 및 방법 |
US10263241B2 (en) * | 2016-12-09 | 2019-04-16 | National Technology & Engineering Solutions Of Sandia, Llc | Electroless process for depositing refractory metals |
KR20230008068A (ko) | 2020-04-14 | 2023-01-13 | 코닝 인코포레이티드 | 금속 산화물 층의 생성을 통해 유리 기판에 대한 금속의 증가된 결합성을 제공하기 위한 유리 물품의 제조 방법, 및 금속 산화물 층을 포함하는 유리 인터포저와 같은 유리 물품 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6249055B1 (en) * | 1998-02-03 | 2001-06-19 | Advanced Micro Devices, Inc. | Self-encapsulated copper metallization |
US6689689B1 (en) * | 2000-01-05 | 2004-02-10 | Advanced Micro Devices, Inc. | Selective deposition process for allowing damascene-type Cu interconnect lines |
US6525425B1 (en) * | 2000-06-14 | 2003-02-25 | Advanced Micro Devices, Inc. | Copper interconnects with improved electromigration resistance and low resistivity |
FR2816758B3 (fr) * | 2000-11-14 | 2003-04-04 | Lionel Girardie | Technique de metallisation par le cuivre pour les connexions et interconnexions des transistors |
KR100367487B1 (ko) * | 2000-12-28 | 2003-01-10 | 주식회사 하이닉스반도체 | 반도체소자의 제조방법 |
KR20040000705A (ko) * | 2002-06-25 | 2004-01-07 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 배선 형성 방법 |
US6979625B1 (en) * | 2003-11-12 | 2005-12-27 | Advanced Micro Devices, Inc. | Copper interconnects with metal capping layer and selective copper alloys |
KR100575063B1 (ko) * | 2004-12-30 | 2006-05-02 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속 배선 형성 방법 |
US7843063B2 (en) * | 2008-02-14 | 2010-11-30 | International Business Machines Corporation | Microstructure modification in copper interconnect structure |
US8736055B2 (en) * | 2012-03-01 | 2014-05-27 | Lam Research Corporation | Methods and layers for metallization |
-
2012
- 2012-03-19 US US13/424,141 patent/US20130240484A1/en not_active Abandoned
-
2013
- 2013-03-13 KR KR1020147028887A patent/KR20140143189A/ko not_active Application Discontinuation
- 2013-03-13 WO PCT/US2013/030993 patent/WO2013142207A1/en active Application Filing
- 2013-03-19 TW TW102109697A patent/TW201350215A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20140143189A (ko) | 2014-12-15 |
US20130240484A1 (en) | 2013-09-19 |
WO2013142207A1 (en) | 2013-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11990368B2 (en) | Doped selective metal caps to improve copper electromigration with ruthenium liner | |
TWI598996B (zh) | 於半導體元件中製作互連之方法 | |
US10665503B2 (en) | Semiconductor reflow processing for feature fill | |
US7694413B2 (en) | Method of making a bottomless via | |
US20110163449A1 (en) | Superfilled metal contact vias for semiconductor devices | |
KR20150114908A (ko) | 인터커넥트들을 형성하기 위한 방법 | |
TW201350215A (zh) | 無電鍍銅合金覆蓋 | |
US7977791B2 (en) | Selective formation of boron-containing metal cap pre-layer | |
TWI595595B (zh) | 無電鍍間隙塡充 | |
KR20130121042A (ko) | 피쳐 필을 위한 반도체 리플로우 프로세싱 | |
KR102383378B1 (ko) | 실리콘 관통 비아 금속화를 위한 접착층 | |
TWI653367B (zh) | 具有高薄片電阻之工件上的電化學沉積 | |
KR101069630B1 (ko) | 흡착억제제를 이용한 반도체 소자의 금속배선 형성방법 | |
TWI576961B (zh) | 用於高深寬比塡充的半導體重流處理 | |
US20200168450A1 (en) | Method for fabricating interconnect of semiconductor device | |
KR102332984B1 (ko) | 구리 상호접속 라인들을 캡핑하는 방법 | |
TWI625773B (zh) | 用於特徵塡充的半導體重流處理 | |
KR102412709B1 (ko) | 개선된 선택도를 갖는 2단계 디포지션 | |
CN103426816A (zh) | 用于高深宽比填充的半导体反流处理 | |
KR100701675B1 (ko) | 반도체 소자의 구리배선 형성방법 |