TW201347892A - 傳導性接合材料、製造該材料之方法及製造電子元件之方法 - Google Patents

傳導性接合材料、製造該材料之方法及製造電子元件之方法 Download PDF

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Publication number
TW201347892A
TW201347892A TW102110855A TW102110855A TW201347892A TW 201347892 A TW201347892 A TW 201347892A TW 102110855 A TW102110855 A TW 102110855A TW 102110855 A TW102110855 A TW 102110855A TW 201347892 A TW201347892 A TW 201347892A
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Taiwan
Prior art keywords
metal
conductive bonding
bonding material
particles
component
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TW102110855A
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English (en)
Inventor
Masayuki Kitajima
Takatoyo Yamakami
Takashi Kubota
Kuniko Ishikawa
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Fujitsu Ltd
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Publication of TW201347892A publication Critical patent/TW201347892A/zh

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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
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Abstract

一種傳導性接合材料包括一焊料組分，且該焊料組分包括：一第一金屬之一金屬發泡體，具有至少一孔，且當在一比該第一金屬之熔點高之溫度加熱該金屬發泡體時，該孔吸收熔化之第一金屬；及一第二金屬，具有一比該第一金屬之熔點低之熔點。

Description

傳導性接合材料、製造該材料之方法及製造電子元件之方法 領域
在此說明之實施例係有關於一種傳導性接合材料、使用該傳導性接合材料製造之電子部件及包括該電子部件之電子元件。
背景
在一電路板上包括一電子組件，例如一晶片組件，之一電子部件有時安裝在一大電路板(以下亦稱為一印刷電路板)，例如一母板或一系統板上。該電子部件之組件，例如一晶片組件，係使用一焊料糊作為一傳導性接合材料而安裝在該電路板上。這安裝被稱為第一安裝。該第一安裝可藉迴焊加熱(第一迴焊)實行。在該組件，例如一晶片組件，以這方式先安裝在該電路板上，除了電極及某些元件以外，電子部件有時以一密封樹脂密封。以一密封樹脂密封之該電子部件有時被稱為一“樹脂模組組件”。
在一電子元件中，該電子部件使用例如一傳導性 接合材料之一焊料糊安裝在一印刷電路板上。這安裝被稱為第二安裝。該第二安裝可以藉迴焊加熱(第二迴焊)實行。
一樹脂模組組件之第二迴焊加熱可再熔化在該樹脂模組組件中之一傳導性接合材料。該再熔化傳導性接合材料可流過在該電子部件中之一窄間隙且在電極之間產生一短路。該窄間隙可由該密封樹脂之破裂或該密封樹脂與該組件，如一晶片組件之分離而形成，且該密封樹脂之破裂或該密封樹脂與該組件之分離係由在該第二迴焊加熱中熔化之傳導性接合材料之體積膨脹及產生之應力產生。
因此，減少由在該第二迴焊加熱中之傳導性接合材料之再熔化產生之體積膨脹及產生之應力正在研究中。例如，包含多數發泡焊料之一組成物，且該等發泡焊料包含一供使用在IC與一外部結構之間接合之第一材料。該發泡焊料具有選自一格狀發泡形態及一網狀發泡形態之一形態且可釋放在該發泡焊料與一與該發泡焊料接合之基板之間的熱應力(包括衝擊及動態負載)。該組成物未被用來安裝一樹脂模組組件。該發泡焊料之目的在於釋放熱應力且即使在第二迴焊加熱後(在第二安裝後)亦依需要地維持一中空結構。
因此，需要一種傳導性接合材料，其可先藉第一迴焊加熱安裝一組件，例如一晶片組件或一半導體組件，在一電路板上且減少由在第二迴焊加熱中之傳導性接合材料之再熔化產生之體積膨脹及產生之應力。
以下是參考文獻。
[參考文獻1]日本公開專利第2009-515711號公報
概要
依據本發明之一方面，一種傳導性接合材料包括一焊料組分，且該焊料組分包括：一第一金屬之一金屬發泡體，具有至少一孔，且當在一比該第一金屬之熔點高之溫度加熱該金屬發泡體時，該孔吸收熔化之第一金屬；及一第二金屬，具有一比該第一金屬之熔點低之熔點。
本發明之目的及優點可藉由特別在申請專利範圍中指出之元件及組合實現及獲得。
應了解的是前述一般說明及以下詳細說明是示範的及說明的且不限制如申請專利範圍所述之發明。
1‧‧‧電路板
2‧‧‧電極墊
3‧‧‧傳導性接合材料
4‧‧‧電極
5‧‧‧組件
6‧‧‧密封樹脂
7‧‧‧間隙
10‧‧‧塗覆之顆粒
11‧‧‧第一金屬顆粒
12‧‧‧第二金屬顆粒
12',14'‧‧‧熔化之第二金屬
13‧‧‧孔
14‧‧‧第二金屬層
20‧‧‧電路板
21‧‧‧電極墊
22‧‧‧傳導性接合材料
23,23a‧‧‧組件
24‧‧‧導線
25‧‧‧密封樹脂
26‧‧‧印刷電路板
27‧‧‧導線端子
28‧‧‧傳導性接合材料
100‧‧‧電子部件
圖1A是具有由第二迴焊加熱形成之一間隙之一電子部件的示意橫截面圖；圖1B是該電子部件之示意橫截面圖，其中一熔化之傳導性接合材料進入該間隙且在電極之間產生一短路；圖2A是由於含有第一金屬顆粒及第二金屬顆粒之一傳導性接合材料之再熔化造成之體積膨脹及產生之應力可減少(初始狀態)之原理的說明圖，該等第一金屬顆粒可藉第二迴焊加熱再熔化；圖2B是由於含有第一金屬顆粒及第二金屬顆粒之一傳導性接合材料之再熔化造成之體積膨脹及產生之應力可減少(第一迴焊加熱狀態)之原理的說明圖，該等第一金屬顆粒 可藉第二迴焊加熱再熔化；圖2C是由於含有第一金屬顆粒及第二金屬顆粒之一傳導性接合材料之再熔化造成之體積膨脹及產生之應力可減少(第二迴焊加熱狀態)之原理的說明圖，該等第一金屬顆粒係藉第二迴焊加熱再熔化；圖3A是由於含有第一金屬顆粒及第二金屬顆粒之一傳導性接合材料之再熔化造成之體積膨脹及產生之應力可減少(初始狀態)之原理的說明圖，各塗覆之顆粒包括在一第一金屬顆粒之表面上之一第二金屬層，該第一金屬顆粒可藉第二迴焊加熱再熔化；圖3B是由於含有第一金屬顆粒及第二金屬顆粒之一傳導性接合材料之再熔化造成之體積膨脹及產生之應力可減少(第一迴焊加熱狀態)之原理的說明圖，各塗覆之顆粒包括在一第一金屬顆粒之表面上之一第二金屬層，該第一金屬顆粒可藉第二迴焊加熱再熔化；圖3C是由於含有第一金屬顆粒及第二金屬顆粒之一傳導性接合材料之再熔化造成之體積膨脹及產生之應力可減少(第二迴焊加熱狀態)之原理的說明圖，各塗覆之顆粒包括在一第一金屬顆粒之表面上之一第二金屬層，該等第一金屬顆粒係藉第二迴焊加熱再熔化；圖4A是具有多數孔之一第一金屬粉末之照片；圖4B是圖4A之部份放大照片；圖4C是第一金屬顆粒在噴霧處理後之照片；圖5是用以製造依據一實施例之一電子部件之一方法 及用以製造依據一實施例之一電子元件之一方法之流程圖；圖6A是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意俯視圖；圖6B是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意俯視圖；圖6C是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意俯視圖；圖6D是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意俯視圖；圖6E是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意俯視圖；圖6F是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意俯視圖；圖6G是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意俯視圖；圖7A是用以製造依據一實施例之一電子部件之一方法 及用以製造依據一實施例之一電子元件之一方法之示意橫截面圖；圖7B是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意橫截面圖；圖7C是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意橫截面圖；圖7D是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意橫截面圖；圖7E是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意橫截面圖；圖7F是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意橫截面圖；圖7G是用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法之示意橫截面圖；圖8A是顯示在例1中在第二安裝後在一電子部件中發生焊料熔化之評價結果的照片；圖8B是圖8A之部份放大照片；圖9A是顯示在比較例1中在第二安裝後在一電子部件 中發生焊料熔化之評價結果的照片；圖9B是圖9A之部份放大照片；圖10是藉一發泡熔化法製造之具有多數孔之一第一金屬顆粒的照片；及圖11是在多數例子中產生之一傳導性接合材料之測量結果的表。
實施例之說明
傳導性接合材料
依據一實施例之一傳導性接合材料包含一焊料組分及任選之一助熔組分及其他組分。
<焊料組分>
該焊料組分包含一第一金屬本體及一第二金屬。
該焊料組分宜包含該第一金屬之顆粒(以下稱為“第一金屬顆粒”)及該第二金屬之顆粒(以下稱為“第二金屬顆粒”)。或者，該焊料組分宜包含多數塗覆之顆粒，且該等塗覆之顆粒係第一金屬顆粒以該第二金屬塗覆。
<<第一金屬本體>>
該第一金屬本體係由該第一金屬構成且具有用以在加熱至一比該第一金屬之金屬顆粒高之溫度時吸收熔化之第一金屬之至少一孔。該第一金屬本體之形狀、尺寸、結構及材料沒有特別限制且可依各目的適當地選擇。該第一金屬本體可具有一顆粒形狀。例如，該第一金屬本體呈圓形、球形、或橢球形。該第一金屬本體可具有一單層結構或一 多層結構。
該第一金屬本體之材料宜為一Sn-Bi-X合金及一Sn-Cu-X合金中之一合金，其中X是Ag、Ni、Zn、Pd或In。在這些合金中，就焊接性而言，一Sn-Bi-Ag合金及一Sn-Cu-Ag合金是特佳的。
該Sn-Bi-Ag合金可以是一Sn-58.0Bi-1.0Ag合金，其中Sn是一主要組分，Bi構成大約58.0質量%，且Ag構成大約1.0質量%。
Sn-Cu-Ag合金可以是一Sn-0.5Cu-3.0Ag合金，其中Sn是一主要組分，Cu構成大約0.5%質量，且Ag構成大約3.0質量%。
該等第一金屬顆粒之體積平均粒徑宜在0.5至50μm之範圍內，且更佳的是10至40μm。當該體積平均粒徑小於0.5μm時，難以製造具有一小直徑之第一金屬顆粒，且該等第一金屬顆粒難以構成該焊料組分之大約30質量%，且可能導致該傳導性接合材料對該電路板之不良施加性。
該體積平均粒徑可以一粒徑分布分析器藉一雷射繞射散射法決定。
該第一金屬之熔點宜為等於或大於150℃且等於或小於230℃，更佳的是在160℃至220℃之範圍內。一等於或大於230℃之熔點導致第二迴焊加熱溫度增加，這會造成該傳導性接合材料之再熔化。
該熔點可藉微差掃描型熱量測定法(DSC)測量。
-孔-
在加熱至一比該第一金屬高之熔點時，該孔吸收熔化之第一金屬。
該孔表示在該等第一金屬顆粒內之空虛空間。該孔之形狀、尺寸及結構沒有特別限制且可依各目的適當地選擇。該孔可為一多孔、網狀、格狀、或中空之形狀。被該第一金屬包圍之2或2以上之孔可互相連通或不連通。
該孔係存在該等第一金屬顆粒內且在該等第一金屬顆粒之表面上沒有開口。該孔之內部宜在低壓或真空下以減少由在該第二迴焊加熱中該傳導性接合材料之再熔化造成之體積膨脹及產生之應力。
該孔之存在可藉以一光學顯微鏡或一掃描式電子顯微鏡取得之第一金屬顆粒之橫截面照片之影像分析來檢測。
該孔可具有容許由於在第二迴焊加熱中該傳導性接合材料之熱膨脹產生之應力可被釋放之任何體積。因此，該孔體積可依各目的適當地決定且宜為該等第一金屬顆粒之5體積%至30體積%，更佳的是10體積%至20體積%。 一小於5體積%之孔體積會導致由在第二迴焊加熱中該傳導性接合材料之再熔化造成之體積膨脹及產生之應力之減少不足。一大於30體積%之孔體積會由於該孔之高體大百分比導致該等第一金屬顆粒之低強度。
該孔體積可如下所述地決定。首先，在熔化前測量該等第一金屬顆粒之體積。在熔化化亦測量該等第一金屬顆粒之體積。該等第一金屬顆粒之孔體積可使用以下公 式由該等測出之體積計算。
孔體積(μm3)=在熔化前之第一金屬顆粒之體積-在熔化後之第一金屬顆粒之體積
該等第一金屬顆粒沒有特別限制且可適當地製造或可以是一商品。一用以製造該等第一金屬顆粒之方法將連同一用以製造一傳導性接合材料之方法一起說明如下。
<第二金屬>
該第二金屬具有一比該第一金屬低之熔點。該第二金屬之形狀、尺寸及結構沒有特別限制且可依各目的適當地選擇。該第二金屬可具有一顆粒形狀。例如，該第二金屬呈圓形、球形、或橢球形。該第二金屬可具有一單層結構或一多層結構。
該第二金屬可為一Sn-Bi合金或一Sn-Bi-Y合金，其中Y是Ag、Ni、Zn、Pd或In。
該Sn-Bi合金可以是一Sn-58.0Bi合金，其中Sn是一主要組分，且Bi構成大約58.0質量%。該Sn-Bi-Y合金可以是一Sn-Bi-Ag合金。該Sn-Bi-Ag合金可以是一Sn-57.0Bi-1.0Ag合金，其中Sn是一主要組分，Bi構成大約57.0質量%，且Ag構成大約1.0質量%。
該等第二金屬顆粒之體積平均粒徑宜為等於或大於10μm，更佳的是在10至60μm，又更佳的是10至40μm之範圍內。
該體積平均粒徑可以一粒徑分布分析器藉一雷 射繞射散射法決定。
該第二金屬之熔點係比該第一金屬之熔點低且宜小於150℃，且更佳的是在80℃至140℃之範圍內。一等於或大於150℃之熔點導致在該第一金屬與該第二金屬之間之熔點差增加，使低溫接合困難。
該熔點可藉微差掃描型熱量測定法(DSC)測量。
該等第二金屬顆粒可適當地製造或可以是一商品。一用以製造該等第二金屬顆粒之方法可以是一噴霧法。依據該噴霧法，藉與一噴灑介質(氣體或液體)高速碰撞來分散通過一噴嘴噴灑之熔化第二金屬顆粒，且冷卻產生之液滴並且凝聚成多數顆粒。
該焊料組分宜包含該等第一金屬顆粒與該等第二金屬顆粒之一混合物。
該等第一金屬顆粒(A)對該等第二金屬顆粒(B)之質量比(A：B)宜在20：80至50：50，且更佳的是30：70至50：50之範圍內。
當該等第一金屬顆粒構成小於20質量%時，這導致一低孔體積及由在第二迴焊加熱中該焊料組分之熱膨脹造成之應力之釋放不足。當該等第一金屬顆粒構成大於50質量%時，這導致低焊接強度。
該焊料組分可包含多數塗覆之顆粒，且該等塗覆之顆粒具有以該第二金屬塗覆之至少一孔之多數第一金屬顆粒。這是較佳的，因為該傳導性接合材料只由塗覆之顆粒構成。
該等塗覆之顆粒可適當地製造或可以是一商品。
在該等塗覆之顆粒中具有至少一孔之第一金屬顆粒可與在該等第一金屬顆粒與該等第二金屬顆粒之混合物中之該等第一金屬顆粒相同。
該等第一金屬顆粒之平均粒徑宜等於或小於40μm，且更佳的是在20至40μm之範圍內。
一層第二金屬之平均厚度宜為等於或大於5μm，且更佳的是在5至20μm之範圍內。一小於5μm之平均厚度導致第二金屬之量減少，可能使在等於或小於150℃低溫接合困難。
覆蓋各第一金屬顆粒之該層第二金屬可藉無電電鍍形成。
該傳導性接合材料之焊料組分含量沒有特別限制且可依各目的適當地選擇。該焊料組分含量宜在50質量%至95質量%，且更佳的是在70質量%至90質量%之範圍內。
<助熔組分>
該助熔組分沒有特別限制且可依各目的適當地選擇。該助熔組分宜為一環氧助熔材料及一松香助熔材料之至少一者。在這些材料中，一環氧助熔材料是特佳的，因為硬化之環氧樹脂可增加該傳導性接合材料之接合強度。
-環氧助熔材料-
該環氧助熔材料包含一環氧樹脂、一羧酸、一溶劑、及任選之組分。
該環氧樹脂沒有特別限制且可依各目的適當地 選擇。該環氧樹脂之例包括熱固性環氧樹脂，例如雙酚An環氧樹脂、雙酚F環氧樹脂、酚醛環氧樹脂、及其改質之環氧樹脂。這些環氧樹脂可單獨或組合使用。
該羧酸沒有特別限制且可依各目的適當地選擇。該羧酸之例子包括飽和脂肪二羧酸、不飽和脂肪二羧酸、脂環二羧酸、含有一胺基之羧酸、含有一羥基之羧酸、雜環二羧酸、及其混合物。更詳而言之，該羧酸可以是丁二酸、戊二酸、己二酸、壬二酸、十二烷二酸、伊康酸、中康酸、環丁羧酸、L-麩胺酸、檸檬酸、蘋果酸、硫代丙酸、硫代丁酸、或二硫代乙醇酸。
該溶劑之例子包括醇類，例如甲醇、乙醇及丙醇，乙二醇溶劑，二乙二醇一己基醚，及辛二醇。
任選之組分之例子包括添加劑，例如一觸變劑、一螯合劑、一表面活性劑、及一抗氧化劑。
該環氧助熔材料沒有特別限制且可適當地合成或可以是一商品。
-松脂助熔材料-
該松脂助熔材料包含一松脂樹脂、一活化劑、一溶劑及任選之組分。
該松脂樹脂可主要包含一天然松脂樹脂或一改質松脂樹脂。該改質松脂樹脂之例子包括聚合化松脂、氫化松脂、酚樹脂改質松脂、及順丁烯二酸改質松脂。
該活化劑可以是可在一金屬上減少一氧化物、一硫化物、一氫氧化物、一氯、一硫酸鹽、及/或一碳酸鹽以 清潔該金屬，且可依各目的適當地選擇。例如，該活化劑係二乙胺氯化氫或二乙胺草酸酯。
該溶劑之例子包括乙二醇溶劑、二乙二醇一己基醚、及辛二醇。
任選之組分之例子包括一觸變劑、一螯合劑、一表面活性劑、及一抗氧化劑。
該松脂助熔材料沒有特別限制且可適當地合成或可以是一商品。
該傳導性接合材料之助熔組分含量沒有特別限制且可依各目的適當地選擇。該助熔組分含量宜在8質量%至14質量%之範圍內。
<其他組分>
除該金屬組分及該助熔組分以外，該傳導性接合材料可包含任選之組分。該等任選之組分之例子包括一金屬吸附劑、一分散劑、及一抗氧化劑。
該金屬吸附劑沒有特別限制且可依各目的適當地選擇。該金屬吸附劑之例子包括咪唑、苯并咪唑、苯三唑、及巰苯并噻唑。
依據一實施例之一傳導性接合材料可藉印刷至在一電子部件中之一電路板上之一電極墊來施加，且該電子部件包括一欲以密封樹脂密封之組分，例如一晶片組件或一半導體組件。施加至該電路板上之該電極墊的該傳導性接合材料容許該電極墊與例如一晶片組件或一半導體組件之該組分連接。接著以一密封樹脂密封在該電路板上之 該組分，例如一晶片組件或一半導體組件。
接著將如此密封之電子部件安裝在一大電路板，例如一母板或一系統板上。該電子部件之端子係藉該傳導性接合材料之第二迴焊加熱而與該電路板之導線端子連接。該第二迴焊加熱可再熔化該電子部件之傳導性接合材料。該再熔化之傳導性接合材料可進入該電子部件中之一間隙且在電極之間產生一短路。
以下將參照圖1A與1B說明使用一含有無孔之第一金屬顆粒之習知傳導性接合材料。
如圖1A所示，一電子部件100包括一電路板1、一在該電路板1上之電極墊2、一傳導性接合材料3、一透過該傳導性接合材料3與該電路板1連接之組件(例如，一晶片組件)5、該組件5之電極4、及一用以密封該組件5之密封樹脂6。當該電子部件100，藉第二迴焊加熱，與一大電路板，例如一母板或一系統板連接時，由該傳導性接合材料3之再熔化造成之體積膨脹及產生之應力會使該密封樹脂6變形，在該密封樹脂6中產生一裂縫或在該組件5與該密封樹脂6之間產生一間隙7。如圖1B所示，該再熔化之傳導性接合材料3會因為毛細作用而進入該間隙7以電氣連接該組件5之電極4或相鄰組件5之電極4，因此造成一短路(以下亦稱為一“燒化現象(flash phenomenon)”。
藉由使用具有至少一孔之第一金屬顆粒及第二金屬顆粒或塗覆之顆粒之組合物作為一焊料組分，且該等第二金屬顆粒或塗覆之顆粒係以一第二金屬塗覆之具有至 少一孔之第一金屬顆粒，依據一實施例之一傳導性接合材料可減少該燒化現象。
在該焊料組分包含具有至少一孔之第一金屬顆粒及第二金屬顆粒之一組合物(混合物)之情形下，如圖2A所示，例如，藉印刷只施加至在一電路板上之一電極墊之該傳導性接合材料包含具有多數孔13之多數第一金屬顆粒11及具有一比該第一金屬低之熔點之多數第二金屬顆粒12之一混合物(初始狀態)。如圖2B所示，第一迴焊加熱熔化該第二金屬顆粒12，且該等第一金屬顆粒11被該熔化之第二金屬12'包圍(第一迴焊加熱狀態)。如圖2C所示，第二迴焊加熱熔化該等第一金屬顆粒11。該等熔化之第一金屬進入在低壓或真空下之該等孔13，且填充該等第一金屬顆粒之孔13。這減少該等第一金屬顆粒之體積且減少施加至包圍具有一減少體積之第一金屬顆粒之該熔化之第二金屬12'之向外應力，因此減少該燒化現象。該等第一金屬顆粒11之孔13在該第二迴焊加熱後消失。
在該焊料組分包含多數塗覆之顆粒，且該等塗覆之顆粒係以一第二金屬塗覆之具有至少一孔之第一金屬顆粒之情形下，如圖3A所示，例如，藉印刷只施加至在一電路板上之一電極墊之該傳導性接合材料包含多數塗覆之顆粒10，且該等塗覆之顆粒10係以一第二金屬層14塗覆之具有多數孔13之多數第一金屬顆粒11(初始狀態)。如圖3B所示，第一迴焊加熱熔化在該等第一金屬顆粒11上之該第二金屬層14，且具有該等孔13之第一金屬顆粒11在低壓或真 空下被該熔化之第二金屬14'包圍(第一迴焊加熱狀態)。如圖3C所示，第二迴焊加熱熔化該等第一金屬顆粒11。該等熔化之第一金屬進入在低壓或真空下之該等孔13，且填充該等第一金屬顆粒之孔13。這減少該等第一金屬顆粒之體積且減少施加至包圍具有一減少體積之第一金屬顆粒之該熔化之第二金屬14'之向外應力，因此減少該燒化現象。該等第一金屬顆粒11之孔13在該第二迴焊加熱後消失。
藉由使用具有至少一孔之第一金屬顆粒及第二金屬顆粒或塗覆之顆粒之組合物作為一焊料組分，且該等第二金屬顆粒或塗覆之顆粒係以一第二金屬塗覆之具有至少一孔之第一金屬顆粒，依據一實施例之一傳導性接合材料可減少由在第二迴焊加熱中該傳導性接合材料之熔化造成之體積膨脹及產生之應力且減少該燒化現象。因此，該傳導性接合材料可廣泛地應用在各種領域且適用於一種用以產生供下述實施例使用之一傳導性接合材料之方法、依據一實施例之元件、一種用以使用該傳導性接合材料製造一電子部件之方法、及一種用以使用該傳導性接合材料製造一電子元件之方法。
<用以產生傳導性掅合材料之方法>
在此說明之一種用以產生供下述實施例使用之一傳導性接合材料之方法包括一產生第一金屬顆粒之程序、一組合程序、及一任選之程序。
<製造第一金屬顆粒之程序>
依據一第一實施例之一產生第一金屬顆粒之方法包括 熔化一第一金屬，在真空下發泡該熔化之第一金屬，冷卻該第一金屬以形成具有多數孔之一第一金屬本體，在真空一切割該第一金屬本體，及實施該第一金屬本體之翻滾流體化床程序以形成多數第一金屬顆粒。
依據一第二產生第一金屬顆粒之一程序包括藉一電鍍方法形成一第一金屬本體，活化該第一金屬本體之表面、氧化該活化之第一金屬本體、及重覆地粉碎該氧化之第一金屬本體以形成具有至少一孔之多數第一金屬顆粒。
在第二實施例中，藉該電鍍方法形成之第一金屬本體之表面被活化，該活化之第一金屬本體被氧化，且該氧化之第一金屬本體被粉碎2次或2次以上，最好是2次至10次。
在第一實施例中，該等第一金屬顆粒可藉一下述發泡熔化法產生。
首先，在一比該第一金屬之熔點高之溫度熔化該第一金屬。如果需要，添加例如Ca之增稠劑以增加該熔化之第一金屬之黏度。接著，混合該熔化之第一金屬與例如TiH2之一發泡劑混合。冷卻該混合物以產生發泡體。將該發泡體切割成一大約50μm之尺寸。藉翻滾流體化床程序將該切割之發泡體作成圓球狀。因此，產生具有至少一孔之第一金屬顆粒(請參見圖10)。該發泡劑可為一氣體。
在該第二實施例中，該等第一金屬顆粒可藉以下方法產生。
首先，藉一電鍍法形成具有一10μm之體積平均粒徑之一第一金屬粉末。接著，氧化該第一金屬粉末。在一真空噴射研磨機粉碎該氧化之第一金屬粉末至一在3至4μm之範圍內之體積平均粒徑。
接著在例如一氫環境之一還原環境中活化該第一金屬粉末之表面。具一活化表面之第一金屬粉末凝結成一在10至20μm之範圍內之體積平均粒徑。接著氧化該凝結之第一金屬粉末。在一真空噴射研磨機中粉碎該氧化之第一金屬粉末至一在5至6μm之範圍內之體積平均粒徑。接著在例如一氫環境之一還原環境中活化該第一金屬粉末之表面。具一活化表面之第一金屬粉末凝結成一在10至20μm之範圍內之體積平均粒徑。接著再氧化該凝結之第一金屬粉末。在一真空噴射研磨機中粉碎該氧化之第一金屬粉末至一在5至6μm之範圍內之體積平均粒徑。重覆進行這些處理以形成一多孔第一金屬粉末(請參見圖4A與4B)。
將該第一金屬粉末供應至一噴霧器，且該噴霧器具有用以進給該粉末通過一熔化噴嘴之一預處理單元。在低壓下熔化且密封該第一金屬顆粒之表面，且使該第一金屬粉末之體積平均粒徑均一。因此，產生該等第一金屬顆粒(請參見圖4C)。接著以一分類器收集具有一目標體積平均粒徑之第一金屬顆粒。如此，產生具有至少一孔之第一金屬顆粒。
<<組合程序>>
該組合程序包括組合該等第一金屬顆粒與一第二金 屬，且該第二金屬具有一比該等第一金屬顆粒之熔點低之熔點。
該組合方法包括組合(混合)該等第一金屬顆粒與該等第二金屬顆粒或塗覆之顆粒，且該等第二金屬顆粒或塗覆之顆粒係以該第二金屬塗覆之第一金屬顆粒。
在組合(混合)該等第一金屬顆粒與該等第二金屬顆粒或塗覆之顆粒之情形下，該等第一金屬顆粒(A)對該等第二金屬顆粒(B)之質量比(A：B)宜在20：80至50：50，且更佳的是30：70至50：50之範圍內。
在該等第二金屬顆粒或塗覆之顆粒係以該第二金屬塗覆之第一金屬顆粒之情形下，該第二金屬層宜具有一等於或大於5μm，更佳的是在5至20μm之範圍內之平均厚度。一用以形成該第二金屬層之方法可以是一無電電鍍法。
<任選之程序>
該任選之程序沒有特別限制且可依各目的適當地選擇。例如，該任選之程序是一混合程序。
在該混合程序中，混合該焊料組分、該助熔組分、及一任選之組分以製備一傳導性接合材料。
在該混合程序中混合沒有特別限制且可依各目的適當地選擇。例如，該混合係在一非氧化環境中以一混合器或一攪拌器實施。
電子部件
依據一實施例之一電子部件包括一電路板、一組件、一密封樹脂、一端子、及一任選之構件。
該電路板包括一電極墊。該組件包括多數電極。該組件之多數電極係使用依據一實施例之一傳導性接合材料與該電路板之電極墊連接。
<電路板>
該電路板之形狀、結構及尺寸沒有特別限制且可依各目的適當地選擇。例如，該電路板是一板。該電路板可具有一單層結構或一多層結構。該電路板之尺寸可依據該電子部件之尺寸決定。
該電路板之基板沒有特別限制且可依各目的適當地選擇。該基板之例子包括無機基板，例如玻璃基板、石英基板、矽基板、及以一SiO2薄膜覆蓋之矽基板；及聚合物基板，例如環氧基板、酚基板、聚對苯二甲酸乙二酯基板、聚碳酸酯基板、聚苯乙烯基板、及聚甲基丙烯酸甲酯基板。這些基板可單獨或組合使用。在這些基板中，玻璃基板、石英基板、矽基板、以一SiO2薄膜覆蓋之矽基板是較佳的，且矽基板及以一SiO2薄膜覆蓋之矽基板是特佳的。
該基板可適當地合成或可以是一商品。
該基板之平均厚度沒有特別限制且可依各目的適畲地選擇。該基板之平均厚度宜為等於或大於100μm，且更佳的是等於或大於500μm。
該基板之尺寸沒有特別限制且可依各目的適當地選擇。該基板之尺寸宜在長度10至200mm、寬度10至200mm及厚度0.5至5mm之範圍內。
該組件之電路板之一安裝面的形狀沒有特別限制且可依各目的適當地選擇。例如，該安裝面呈正方形、矩形或圓形。
該電路板宜為一配線電路板，且該配線電路板在該基板上具有多數電極之一配線圖案。
該配線電路板沒有特別限制且可依各目的適當地選擇。例如，該配線電路板是一單層電路板(單層印刷配線板)或一多層電路板(多層印刷配線板)。
例如，藉鍍敷或積層在該電路板之電極上形成一金屬層。
該金屬層可由Cu、Ag、Au、Ni、Sn、Al、Ti、Pd或Si構成，且Cu、Ag或Au較佳。
當施加該傳導性接合材料至在該電路板上之電極時，為了改善在該傳導性接合材料與在該電路板上之電極之間的連接，最好塗覆在該電路板上之電極之表面。該表面塗覆沒有特別限制且可依各目的適當地選擇。例如，該表面塗覆係助熔塗覆、預助熔塗覆、金屬鍍敷、或焊接。
<組件>
該組件是具有多數電極之任何組件且可依各目的適當地選擇。例如，該組件是一晶片組件或一半導體組件。
該組件係安裝在該電路板上。該晶片組件沒有特別限制且可依各目的適當地選擇。該晶片組件之例子包括電容器及電阻器。這些晶片組件可單獨或組合使用。
該半導體組件沒有特別限制且可依各目的適當 地選擇。該半導體組件例子包括積體電路、大型積體電路、電晶體、閘流體、及二極體。該等半導體組件可單獨或組合使用。
該組件之尺寸沒有特別限制且可依各目的適當地選擇。例如，該組件是一1608型(1.6mm×0.8mm×0.8mm)、一1005型(1mm×0.5mm×0.5mm)、或一0603型(0.6mm×0.3mm×0.3mm)。
通常，多種組件安裝在該電路板上。所有組件不一定藉焊接連接。該等組件之至少一部份可藉焊接連接，且該等組件之一部份可透過一引線框連接。
<<施加傳導性接合材料>>
用以施加該傳導性接合材料至該電路板之一電極或該電子部件之一端子之一方法沒有特別限制且可依各目的適當地選擇，只要該傳導性接合材料可以一所欲厚度或一所欲重量施加即可。例如，一用以施加該傳導性接合材料之方法是一網版印刷法、一轉移印刷法、一分配排出法、或一噴墨法。
-網版印刷法-
該網版印刷法可以具有一遮罩之一印刷機實施。
具有一遮罩之印刷機包括用以固定一電路板或一電子部件之一單元、用以對齊該遮罩與該電路板之一電極或該電子部件之一端子的一單元、用以將該遮罩壓抵在該電路板或該電子部件上且使用一刮刀透過該遮罩施加依據一實施例之一傳導性接合材料至在該遮罩下方之該電路 板之電極或該電子部件之端子、及一任選之單元。
該遮罩沒有特別限制且可依各目的適當地選擇。例如，該遮罩是一網遮罩或一金屬遮罩。在這些遮罩中，一金屬遮罩是特佳的，因為該金屬遮罩適合多種粒徑且容易清潔。
-轉移印刷-
依據該轉移印刷法，使用在相隔一距離之一刮刀，由依據一實施例之一傳導性接合材料形成一具有某一厚度之平坦塗膜，轉移該平坦塗膜至一衝壓器且在一電路板之一電極或一電子部件之一端子上衝壓該平坦塗膜以施加某一量之傳導性接合材料至該電路板之電極或該電子部件之端子。一轉移印刷機可用於轉移印刷。
該轉移印刷機可包括用以形成一平坦塗膜之一施加器，用以固定一電路板之一固定單元，用以三維地驅動一衝壓器、轉移該平坦塗膜、及衝壓該平坦塗膜之一轉移及衝壓單元，及一任選之單元。
-分配排出法-
依據該分配排出法，在一電路板之一電極或一電子部件之一端子上排出某一量之依據一實施例之一傳導性接合材料。一分配器可供該分配排出法使用。
該分配器包括：一注射器，用以施加一所需排出壓力至在一注射筒中之一傳導性接合材料以透過在該注射筒末端之一針注射某一量之傳導性接合材料；一單元，用以三維地驅動該注射筒以對齊該注射筒與一電路板之一電 極或一電子部件之一端子；一排出器，以排出一所欲量傳導性接合材料在該電路板之電極或該電子部件之端子上；及一任選之單元。
依據該分配排出法法，該排出位置及排出速度可使用一程式改變。因此，該傳導性接合材料可施加至一遮罩難以壓抵之具有一高度差或凹與凸部之一電路板或一電子部件。
-噴墨法-
依據該噴墨法，透過一噴墨裝置之一細噴嘴在一電路板之一電極或一電子部件之一端子上排出依據一實施例之一傳導性接合材料。
加熱在該電路板之電極或該電子部件之端子上之傳導性接合材料至用以接合之某溫度。
一供該接合使用之裝置沒有特別限制且可依各目的適當地選擇。例如，供該接合使用之裝置是一迴焊裝置，且該迴焊裝置具有一適用於焊接加熱處理或一高溫浴之爐。
使用該迴焊裝置之熱處理宜在100℃至300℃之範圍內之溫度實施10至120分鐘。
<密封樹脂>
該密封樹脂可為可密封該組件且可依各目的適當地選擇之任何樹脂。該密封樹脂之例子包括熱固性樹脂，例如酚樹脂、蜜胺樹脂、環氧樹脂、及聚酯樹脂。
一用以密封該組件之方法沒有特別限制且可依 各目的適當地選擇。例如，用以密封該組件之方法是用以以一熱固性樹脂封裝該組件之封裝或使用一熱固性樹脂之轉移模製。
可以該密封樹脂只密封該組件，可以該密封樹脂密封該電路板之整個表面。
<端子>
該電子部件具有多數端子。該等端子可以是可連接在該電路板上之電線與一外部基板之任何端子且可依各目的適當地選擇。例如，該等端子是導線。
該等端子之形狀沒有特別限制且可依各目的適當地選擇。例如，該等溫度具有一線形。
該等導線之材料沒有特別限制且可依各目的適當地選擇。例如，該等導線之材料是金、銀或銅。
電子元件
依據一實施例之一電子元件包括一電子部件及一任選之構件。
該電子部件可以是依據一實施例之一電子部件。該電子部件係藉使用依據一實施例之一傳導性接合材料焊接該電子部件之一端子至該電子元件而安裝在該電子元件上。
該電子元件沒有特別限制且可依各目的適當地選擇。該電子元件之例子包括處理器，例如個人電腦及伺服器；通訊裝置，例如行動電話及無線電組；辦公室設備，例如印表機及影印機；影音設備，例如電視及音響系統； 及家用電器，例如空調及冰箱。
圖5是用以製造依據一實施例之電子部件之一方法及用以製造依據一實施例之電子元件之一方法之流程圖。
<用以使用傳導性接合材料製造電子部件之方法>
用以使用依據一實施例之一傳導性接合材料製造一電子元件之一方法包括一產生第一金屬顆粒之程序，一組合程序，一基板製備程序，印刷作為該傳導性接合材料之一焊料糊之一程序，一晶片組件安裝程序，一第一迴焊加熱程序，一導線安裝及成形程序，一樹脂密封程序，及一任選之程序。
該產生第一金屬顆粒之程序，該組合程序及該任選之程序係與在用以產生一傳導性接合材料之方法中相同且將不再說明。
-基板製備程序-
該基板製備程序包括製備具有一電極墊之一電路板。
-印刷焊料糊之程序-
該印刷焊料糊之程序包括在該電路板上印刷作為依據一實施例之一傳導性接合材料之一焊料糊以施加該傳導性接合材料至該電路板之電極墊。該印刷方法沒有特別限制且可依各目的適當地選擇。例如，該印刷方法是網版印刷。
-晶片組件安裝程序-
該晶片組件安裝程序包括在該電路板之電極墊上安裝 一組件，例如一晶片組件。
-第一迴焊加熱程序-
該第一迴焊加熱程序包括實施第一迴焊加熱以便在該電路板上焊接一組件，例如一晶片組件。該第一迴焊加熱宜在160℃之一尖峰溫度實施10分鐘。
-導線安裝及成形程序-
該導線安裝及成形程序包括安裝及成形一導線。
-樹脂密封程序-
該樹脂密封程序包括以一密封樹脂密封。該密封樹脂可以是可密封該組件之任何樹脂且可依各目的適當地選擇。該密封樹脂之例子包括熱固性樹脂，例如酚樹脂、蜜胺樹脂、環氧樹脂、及聚酯樹脂。
透過用以製造一電子部件之方法之程序，在該電路板上安裝該組件(第一安裝)以製造該電子部件。
<用以使用傳導性接合材料製造電子元件之方法>
用以使用依據一實施例之一傳導性接合材料製造一電子元件之一方法包括一產生第一金屬顆粒之程序，一組合程序，一印刷電路板製備程序，印刷一焊料糊之一程序，安裝一電子部件之一程序，一第二迴焊加熱程序，及一任選之程序。
該產生第一金屬顆粒之程序，該組合程序及該任選之程序係與在用以產生一傳導性接合材料之方法中相同且將不再說明。
-印刷電路板製備程序-
該印刷電路板製備程序包括製備具有一導線端子之一印刷電路板。
-印刷焊料糊之程序-
該印刷焊料糊之程序包括藉網版印刷在該印刷電路板上施加作為該傳導性接合材料之一焊料糊，因此施加該傳導性接合材料至該導線端子。
-安裝電子部件之程序-
該安裝一電子部件之程序包括在該印刷電路板之導線端子上放置該電子部件之一導線。
-第二迴焊加熱程序-
該第二迴焊加熱程序包括第二迴焊加熱。該電子部件被焊接在該印刷電路板上(第二安裝)。該第二迴焊加熱宜在235℃之一尖峰溫度實施5分鐘。
透過用以製造一電子元件之方法之這些程序，在該印刷電路板上安裝該電子部件(第二安裝)以製造該電子元件。
圖6A至6G是顯示用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法的示意俯視圖。圖7A至7G是顯示用以製造依據一實施例之一電子部件之一方法及用以製造依據一實施例之一電子元件之一方法的示意橫截面圖。
請參閱圖6A至6G及圖7A至7G，以下將說明用以製造依據一實施例之一電子部件之一方法及用以製造依據 一實施例之一電子元件之一方法。
首先，如圖6A與7A所示，製備具有多數電極墊21之一電路板20。
如圖6B與7B所示，在該電路板20上印刷一焊料糊作為依據一實施例之一傳導性接合材料22以施加該傳導性接合材料22至該等電極墊21之一部份。該印刷方法沒有特別限制且可依各目的適當地選擇。例如，該印刷方法是網版印刷。
如圖6C與7C所示，在設置在該等電極墊21之一部份上之該傳導性接合材料22上放置多數組件23。
如圖6D與7D所示，藉第一迴焊加熱焊接該等組件23。該第一迴焊加熱宜在160℃之一尖峰溫度實施10分鐘。
如圖6E與7E所示，如果需要，安裝另一組件23a，且如果需要，安裝及成形多數導線24。
如圖6F與7F所示，以一密封樹脂25密封完成該等組件23之安裝(第一安裝)。因此，製造依據本發明之電子部件。
該密封樹脂可以是可密封該組件之任何樹脂且可依各目的適當地選擇。該密封樹脂之例子包括熱固性樹脂，例如酚樹脂、蜜胺樹脂、環氧樹脂、及聚酯樹脂。
如圖6G與7G所示，製備具有多數導線端子27之一印刷電路板26。藉網版印刷施加一焊料糊至該印刷電路板26以施加一傳導性接合材料28至該等導線端子27。在該 印刷電路板26之導線端子27上放置該電子部件之導線24。藉第二迴焊加熱焊接該電子部件至該印刷電路板26(第二安裝)。該第二迴焊加熱宜在235℃之一尖峰溫度實施5分鐘。因此，製造依據本發明之電子元件。
例子
雖然在此說明之實施例將在以下例子中進一步說明，但是該等實施例不受限於這些例子。
在以下例子及比較例中，第一金屬顆粒及第二金屬顆粒之體積平均粒徑、一塗覆顆粒之第二金屬層之平均厚度、及該等第一金屬顆粒及該等第二金屬顆粒之熔點係如下述地測量。
<用以測量第一金屬顆粒及第二金屬顆粒之體積平均粒徑之方法>
該等金屬顆粒之體積平均粒徑係由以一雷射散射繞射粒徑分布分析器(CILAS 1090，由Cilas製造)測量之一粒子數之粒徑分布計算。
<用以測量塗覆顆粒之第二金屬層之平均厚度之方法>
一第二金屬層之平均厚度係藉一X射線螢光分析法(一螢光X射線鍍敷厚度測量裝置，由Alex公司製造)測量。
<用以測量第一金屬顆粒及第二金屬顆粒之熔點之方法>
金屬顆粒之熔點係以一微差掃描型熱量測定計(DSC)(DSC 6200，由Seiko Instruments公司製造)以一0.5℃ /s之溫度梯度在25℃至250℃之溫度範圍內測量。
製造例1
-製造具有孔之第一金屬顆粒-
具有至少一孔之第一金屬顆粒，即Sn-3.0Ag-0.5Cu合金顆粒係藉以下方法製造。
首先，藉一電鍍法形成具有一10μm之體積平均粒徑之一Sn-3.0Ag-0.5Cu合金粉末。氧化該Sn-3.0Ag-0.5Cu合金粉末。接著在一真空噴射研磨機中粉碎該氧化之Sn-3.0Ag-0.5Cu合金粉末至一在3至4μm之範圍內之體積平均粒徑。
在一氫環境中活化該Sn-3.0Ag-0.5Cu合金粉末之表面。凝結具有一活化表面之Sn-3.0Ag-0.5Cu合金粉末至一在10至20μm之範圍內之體積平均粒徑。接著氧化該凝結之Sn-3.0Ag-0.5Cu合金粉末。接著在一真空噴射研磨機中粉碎該氧化之Sn-3.0Ag-0.5Cu合金粉末至一在5至6μm之範圍內之體積平均粒徑。在一氫環境中活化該Sn-3.0Ag-0.5Cu合金粉末之表面。凝結具有一活化表面之Sn-3.0Ag-0.5Cu合金粉末至一在10至20μm之範圍內之體積平均粒徑。接著氧化該凝結之Sn-3.0Ag-0.5Cu合金粉末。接著氧化該凝結之Sn-3.0Ag-0.5Cu合金粉末。接著在一真空噴射研磨機中粉碎該氧化之Sn-3.0Ag-0.5Cu合金粉末至一在5至6μm之範圍內之體積平均粒徑以製造一多孔Sn-3.0Ag-0.5Cu合金粉末(請參見圖4A與4B)。
將該Sn-3.0Ag-0.5Cu合金粉末供應至一噴霧 器，且該噴霧器具有用以進給該粉末通過一熔化噴嘴之一預處理單元。在低壓下熔化且密封該Sn-3.0Ag-0.5Cu合金粉末之表面，且使該Sn-3.0Ag-0.5Cu合金粉末之體積平均粒徑均一。因此，製造該等Sn-3.0Ag-0.5Cu合金顆粒(請參見圖4C)。接著以一分類器收集具有一目標體積平均粒徑之Sn-3.0Ag-0.5Cu合金顆粒。如此，製造具有至少一孔之Sn-3.0Ag-0.5Cu合金顆粒(具有一217℃之熔點，一40μm之體積平均粒徑及一20μm之孔徑)。
製造例2
-製造沒有孔之Sn-3.0Ag-0.5Cu合金顆粒-
藉一噴霧法將熔化之Sn-3.0Ag-0.5Cu合金形成多數顆粒。冷卻及收集該等Sn-3.0Ag-0.5Cu合金顆粒。透過一篩子將該等Sn-3.0Ag-0.5Cu合金顆粒分類成一所欲粒徑範圍。因此，製造依據製造例2之Sn-3.0Ag-0.5Cu合金顆粒(具有一217℃之熔點及一40μm之體積平均粒徑)。
製造例3
-製造第二金屬顆粒-
藉一噴霧法將熔化之Sn-57.0Bi-1.0Ag合金形成多數顆粒。冷卻及收集該等Sn-57.0Bi-1.0Ag合金顆粒。透過一篩子將該等Sn-57.0Bi-1.0Ag合金顆粒分類成一所欲粒徑範圍。因此，製造Sn-57.0Bi-1.0Ag合金顆粒(具有一139℃之熔點及一40μm之體積平均粒徑)作為第二金屬顆粒。
製造例4
-製造塗覆之顆粒-
以與製造例1相同之方式製造具有至少一孔之Sn-3Ag-0.5Cu合金顆粒(具有一217℃之熔點，一30μm之體積平均粒徑及一20μm之孔徑)作為第一金屬顆粒。
將具有至少一孔之Sn-3Ag-0.5Cu合金顆粒浸在含有一Sn-57.0Bi-1.0Ag合金之無電電鍍溶液之一鍍敷浴中。形成具有一10μm之厚度之一Sn-57.0Bi-1.0Ag合金鍍敷薄膜，且清洗及乾燥該等塗覆之顆粒。因此，製造依據製造例4之塗覆之顆粒。
例1
在一非氧化環境中混合以下組分以製備一焊料糊作為一傳導性接合材料。
<助熔組分：10質量%>
聚合化松脂(松木樹脂)：48質量%
二苯基胍HBR(活化劑)：2質量%
氫化蓖麻油(觸變劑)：5質量%
二溴己烷(脂肪族化合物)：5質量%
α-松脂醇(溶劑)：40質量%
<焊料糊：：90質量%>
<<第一金屬顆粒：50%質量%>>
使用在製造例1中製造之具有至少一孔之第一金屬顆粒。
第一金屬顆粒之組成：Sn-3.0Ag-0.5Cu(質量%)
體積平均粒徑40μm
平均體積：33510.32μm3
熔點：217℃
一孔之定義：(在一第一金屬顆粒中沒有第一金屬之一部份(體積)
孔體積：12.5體積%(孔直徑20μm，第一金屬顆粒直徑40μm)
(4188.79020μm3/33510.32μm3)×100=12.5體積%
熱膨脹係數：23.4ppm/℃
在250℃之體積膨脹：505.18μm3
<<第二金屬顆粒：50%質量%>>
使用在製造例3中製造之第二金屬顆粒。
第二金屬顆粒之組成：Sn-57.0Bi-1.0Ag(質量%)
體積平均粒徑40μm
平均體積：33510.32μm3
熔點：139℃
熱膨脹係數：15.0ppm/℃
在250℃之體積膨脹：327.78μm3
如下所述地測量在如此製備之傳導性接合材料中之孔之孔體積及孔之真空度。如下所述地評價焊料熔化之發生率及電氣可靠性。圖11列出該等結果。
<用以測量孔體積之方法>
首先，計算在熔化前之該焊料組分之體積(該等第一金屬顆粒及該等第二金屬顆粒)。測量在熔化後之該焊料組分之體積(該等第一金屬顆粒及該等第二金屬顆粒)。使用以下公式由這些體積計算孔體積。該孔體積是10次測量之平均。
孔體積(μm3)=在熔化前之焊料組分之體積-在熔化後之焊料組分之體積
<用以測量孔之真空度之方法>
在真空中在10-7托熔化該焊料組分之體積(該等第一金屬顆粒及該等第二金屬顆粒)。在熔化該焊料組分之體積(該等第一金屬顆粒及該等第二金屬顆粒)之前及之後測量莫耳數。使用一狀態方程式計算莫耳數(在該孔中之莫耳數)之增加。接著計算該孔之真空度。該孔之真空度是10次測量之平均。
孔之真空度(托)=760托/(在孔中之莫耳數/在大氣壓下之莫耳數)
<由在第二迴焊加熱中焊料組分之熱膨脹造成之理論增加體積之計算>
在由第二迴焊加熱中熱膨脹造成之具有至少一孔之第一金屬顆粒(具有一40μm之直徑)之增加長度δL可使用以下公式計算。
在常溫(25℃)之第一金屬顆粒之直徑×熱膨脹係數×由常溫增加之溫度=在第二迴焊加熱中第一金屬顆粒之直徑
該第一金屬顆粒之熱膨脹係數是25ppm/℃，且該第二迴焊加熱溫度是一260℃之尖峰溫度(常溫：25℃)。
由熱膨脹造成之第一金屬顆粒之增加長度δL=40μm×(25×10-6)×(260-25)=0.235μm。
在由第二迴焊加熱中熱膨脹造成之具有至少一 孔之第一金屬顆粒之增加體積δV可使用以下公式計算。
在熱膨脹後之第一金屬顆粒之體積(直徑40μm+0.325μm=40.325μm)-在熱膨脹前之第一金屬顆粒之體積(直徑40μm)
由熱膨脹造成之第一金屬顆粒之增加體積δV=34104.42μm3-33510.32μm3=594.1μm3
由熱膨脹造成之焊料組分之增加體積δV=594.1μm3×2(第一金屬顆粒+第二金屬顆粒)=1188.2μm3
<在具有孔之第一金屬顆粒中孔之理論真空度之計算>
假設在液體具有一彎曲表面時，使用拉普拉斯公式由壓力差可計算將該熔化之第一金屬之表面積減至最小之力。
<<拉普拉斯公式>>
壓力差δP=P(空氣)-P(液體)
其中P(空氣)實質為零。
該熔化之第一金屬之內聚力在250℃是50,000Pa。
決定產生一小於或等於在250℃該熔化之第一金屬之內聚力(50,000Pa)之壓力差的孔之真空度。
如果該第一金屬顆粒具有一20μm之孔直徑，則該孔體積是4188.79μm3=4.18879×10-12公升
在一760托(大氣壓)之真空度之莫耳數是4.18879×10-12公升/22.4公升
使用這些值，依據波以耳-查理定律由在250℃該 第一金屬之內聚力為等於或小於50,000Pa時之莫耳數計算真空度(托)。
<<波以耳-查理定律>>
P(50,000Pa)=(n/V)RT(523K)
與50,000Pa之在250℃第一金屬之內聚力平衡之該孔之真空度係195.88托。
<用以評價焊料熔化之發生率(燒化現象)之方法>
在一電路板(長度110mm×寬度110mm×厚度1.0mm)上形成一銅圖案(墊尺寸：長度0.3mm×寬度0.3mm，在墊之間之距離(間距)：0.2mm)。
使用一金屬網及一金屬刮刀將該傳導性接合材料網版印刷在該電路板上。將一晶片組件(一0603晶片組件(長度0.6mm×寬度0.3mm×厚度0.3mm)，一Sn電極)放在該經網版印刷之傳導性接合材料上。在一非氧化環境(氧濃度小於100ppm)中在一160℃之尖峰溫度對該晶片組件進行第一迴焊加熱10分鐘以便在該電路板上進行第一安裝。
在清洗該電路板後，施加一密封樹脂(環氧黏著劑)至該電路板，在150℃固化一小時，且在高溫及高濕(85℃及85%RH)保持靜置24小時，因此製造一電子部件。
在一235℃之尖端溫度對該電子部件進行第二迴焊加熱5分鐘(第二安裝)。
在該第二迴焊加熱後，以目視檢查該電子部件。在晶片組件之間及晶片組件內具有焊料熔化之晶片數目。 決定400晶片組件之發生率(%)。圖8A與8B是在例1中評價之在該第二安裝後之電子部件之照片。如圖8A與8B所示，在例1中未發生焊料熔化。
<用以評價電氣可靠性之方法>
以與在用以評價焊料熔化之發生率之方法中相同之方式，一235℃之尖端溫度對該電子部件進行第二迴焊加熱5分鐘(第二安裝)。在該第二迴焊加熱後，以一電阻計(由Fluke公司製造之77MULTIMETER)測量該電子部件之一焊接部份之電阻。依據以下準則評價該電子部件之電氣可靠性。
[評價準則]
良好(圓圈)：電阻沒有增加
中等(三角)：電阻增加
不良(叉號)：開路故障
例2
以與在例1中相同之方式產生一依據例2之傳導性接合材料，但是使用在製造例4中製造之塗覆之顆粒作為該焊料組分。
以與在例1中相同之方式測量該傳導性接合材料之孔體積及孔之真空度。以與在例1中相同之方式評價焊料熔化之發生率及電氣可靠性。圖11列出該等結果。
例3
以與在例1中相同之方式產生一依據例3之傳導性接合材料，但是藉改變用以在製造例1中製造該等第一金屬顆粒 之條件製造該等第一金屬顆粒。該等第一金屬顆粒具有表列在圖11中之孔體積及孔之真空度。
以與在例1中相同之方式測量該傳導性接合材料之孔體積及孔之真空度。以與在例1中相同之方式評價焊料熔化之發生率及電氣可靠性。圖11列出該等結果。
例4
以與在例1中相同之方式產生一依據例4之傳導性接合材料，但是藉改變用以在製造例1中製造該等第一金屬顆粒之條件製造該等第一金屬顆粒。該等第一金屬顆粒具有表列在圖11中之孔體積及孔之真空度。
以與在例1中相同之方式測量該傳導性接合材料之孔體積及孔之真空度。以與在例1中相同之方式評價焊料熔化之發生率及電氣可靠性。圖11列出該等結果。
比較例1
以與在例1中相同之方式產生一依據比較例1之傳導性接合材料，但是使用以下焊料組分。
<焊料組分：90質量%>
在製造例2中製造之沒有孔之Sn-3Ag-0.5Cu合金顆粒(具有一218℃之熔點及一40μm之體積平均粒徑)：50質量%
在製造例3中製造之Sn-57.0Bi-1.0Ag合金顆粒(具有一139℃之熔點及一40μm之體積平均粒徑)作為第二金屬顆粒：50質量%
以與在例1中相同之方式測量該傳導性接合材料之孔體積及孔之真空度。以與在例1中相同之方式評價焊料 熔化之發生率及電氣可靠性。圖11列出該等結果。圖9A與9B是在比較例1中評價之在該第二安裝後之該等電子部件之照片。圖9A與9B顯示在比較例1中發生焊料熔化。
在圖11中，在例1中之孔體積是比由在該第二迴焊加熱中該焊料組分之熱膨脹造成之理論增加體積(1188.2μm3)大之4112.31μm3。在例1中之孔之真空度是比該孔之理論真空度(195.88托)低之85.23托。因此，在例1中，該等第一金屬顆粒之孔可充分地減少在該第二迴焊加熱中之體積膨脹及產生之應力，且焊料熔化之發生率是0%。
在例2中之孔體積是比由在該第二迴焊加熱中該焊料組分之熱膨脹造成之理論增加體積(1188.2μm3)大之4091.56μm3。在例2中之孔之真空度是比該孔之理論真空度(195.88托)低之65.65托。因此，在例2中，該等第一金屬顆粒之孔可充分地減少在該第二迴焊加熱中之體積膨脹及產生之應力，且焊料熔化之發生率是0%。
在例3中之孔體積是比由在該第二迴焊加熱中該焊料組分之熱膨脹造成之理論增加體積(1188.2μm3)大之4132.14μm3。在例3中之孔之真空度是比該孔之理論真空度(195.88托)高之420.31托。因此，在例3中，雖然該等第一金屬顆粒之孔可減少在該第二迴焊加熱中之體積膨脹及產生之應力，該孔之一高真空度導致該熔化之第一金屬之不良吸收，且焊料熔化之發生率是10.5%。這導致電阻增加。
在例4中之孔體積是比由在該第二迴焊加熱中該焊料組分之熱膨脹造成之理論增加體積(1188.2μm3)大之 1212.34μm3。在例4中之孔之真空度是比該孔之理論真空度(195.88托)低之68.97托。因此，在例4中，該等第一金屬顆粒之孔不足以減少在該第二迴焊加熱中之體積膨脹及產生之應力，且焊料熔化之發生率是23.75%。這導致電阻增加。
在比較例1中，沒有孔之第一金屬顆粒無法減少在該第二迴焊加熱中之體積膨脹及產生之應力，且焊料熔化之發生率是38.75%。這導致發生一開路故障及非常低之電氣可靠性。
例5
<電子部件及電子元件之製造>
使用在例1中製造之傳導性接合材料如下所述地製造一電子部件及一電子元件。
<<電子部件之製造>>
首先，在一電路板(長度110mm×寬度110mm×厚度1.0mm)上形成一銅圖案(墊尺寸：長度0.3mm×寬度0.3mm，在墊之間之距離(間距)：0.2mm)。使用一金屬網及一金屬刮刀將在例1中製造之該傳導性接合材料網版印刷在該電路板上。該金屬網具有一100%之墊開口及一150μm之厚度。將一晶片組件(一0603晶片組件，一Sn電極)放在該經網版印刷之傳導性接合材料上。在一非氧化環境(氧濃度小於100ppm)中在一160℃之尖峰溫度對該晶片組件進行第一迴焊加熱10分鐘以便在該電路板上進行第一安裝。
在清洗該電路板後，施加一密封樹脂(環氧黏著劑)至該電路板，在150℃固化一小時，且在高溫及高濕(85 ℃及85%RH)保持靜置24小時，因此製造一電子部件。導線未連接。
<<電子元件之製造>>
在具有多數導線端子之一電路板上網版印刷該傳導性接合材料作為一焊料糊以施加該傳導性接合材料至該等導線端子。在該電路板之導線端子上放置該電子部件之導線端子。藉在一235℃之尖端溫度第二迴焊加熱5分鐘焊接該電子部件至該電路板上。因此，製造該電子元件。
<<評價>>
以與在例1中相同之方式評價該電子元件之焊料熔化之發生率及該電氣可靠性。該焊料熔化之發生率是0%，且沒有觀察到電阻增加。因此，該電子元件具有高電氣可靠性。
在此所述之所有例子與條件語言是欲達成教學之目的以協助讀者了解本發明及由發明人貢獻之觀念以便促進該技術，且欲被視為不被限制於這些特別說明之例子及條件，且在說明書中之這些例子的編排方式也與顯示本發明之優劣性無關。雖然本發明之實施例已詳細說明過了，但是應了解的是在不偏離本發明之精神與範疇的情形下，可對其進行各種變化、取代及更改。
11‧‧‧第一金屬顆粒
12‧‧‧第二金屬顆粒
12'‧‧‧熔化之第二金屬
13‧‧‧孔

Claims (19)

  1. 一種傳導性接合材料，包含：一焊料組分，其包括：一第一金屬之金屬發泡體，具有至少一孔，且當在一比該第一金屬之熔點為高之溫度下加熱該金屬發泡體時，該孔吸收經熔化之第一金屬；及一第二金屬，具有一比該第一金屬之熔點為低之熔點。
  2. 如申請專利範圍第1項之傳導性接合材料，其中該焊料組分包含該金屬發泡體之多數顆粒及該第二金屬之多數顆粒，或該焊料組分包含多數經塗覆之顆粒，且該等經塗覆之顆粒係以該第二金屬塗覆之該金屬發泡體之多數顆粒。
  3. 如申請專利範圍第2項之傳導性接合材料，其中該等第一金屬顆粒(A)對該等第二金屬顆粒(B)之質量比(A：B)係在20：80至50：50之範圍內。
  4. 如申請專利範圍第1項之傳導性接合材料，其中該第一金屬具有一等於或大於150℃且等於或小於230℃之熔點，且該第二金屬具有一小於150℃之熔點。
  5. 如申請專利範圍第1項之傳導性接合材料，其中該第一金屬之金屬發泡體係Sn-Bi-X合金顆粒及Sn-Cu-X合金顆粒中之一者，X係選自於由Ag、Ni、Zn、Pd及In構成之群組。
  6. 如申請專利範圍第1項之傳導性接合材料，其中該第二金屬係一Sn-Bi合金及一Sn-Bi-Y合金中之一者，Y係選自於由Ag、Ni、Zn、Pd及In構成之群組。
  7. 如申請專利範圍第1項之傳導性接合材料，其中該焊料組分構成該傳導性接合材料之等於或大於50質量%且等於或小於95質量%。
  8. 如申請專利範圍第1項之傳導性接合材料，更包含一助熔組分，且該助熔組分係由一環氧助熔材料及一松脂助熔材料中之一者構成。
  9. 如申請專利範圍第8項之傳導性接合材料，其中該助熔組分構成該傳導性接合材料之等於或大於5質量%且等於或小於50質量%。
  10. 一種製造傳導性接合材料之方法，包含：熔化一第一金屬；在真空下發泡該經熔化之第一金屬以形成多數孔；冷卻該經熔化之第一金屬以形成一金屬發泡體；在真空下切割該金屬發泡體；對該經切割金屬發泡體實施一翻滾流體化床程序以形成多數第一金屬顆粒；及組合該等第一金屬顆粒與一第二金屬，且該第二金屬具有一比該等第一金屬顆粒之熔點為低之熔點。
  11. 如申請專利範圍第10項之製造傳導性接合材料之方法，其中該傳導性接合材料包含一焊料組分，該焊料組分包 含該等第一金屬顆粒及該第二金屬之顆粒，或該焊料組分包含多數經塗覆之顆粒，且該等經塗覆之顆粒係以該第二金屬塗覆之該等第一金屬顆粒。
  12. 如申請專利範圍第10項之製造傳導性接合材料之方法，其中該第一金屬具有一等於或大於150℃且等於或小於230℃之熔點，且該第二金屬具有一小於150℃之熔點。
  13. 如申請專利範圍第10項之製造傳導性接合材料之方法，其中該第一金屬係Sn-Bi-X合金顆粒及Sn-Cu-X合金顆粒中之一者，X係選自於由Ag、Ni、Zn、Pd及In構成之群組。
  14. 如申請專利範圍第10項之製造傳導性接合材料之方法，其中該第二金屬係一Sn-Bi合金及一Sn-Bi-Y合金中之一者，Y係選自於由Ag、Ni、Zn、Pd及In構成之群組。
  15. 如申請專利範圍第11項之製造傳導性接合材料之方法，其中該焊料組分構成該傳導性接合材料之等於或大於50質量%且等於或小於95質量%。
  16. 一種製造傳導性接合材料之方法，包含：藉一電鍍法形成一第一金屬本體；活化該第一金屬本體之表面；氧化該經活化之第一金屬本體，且重覆地粉碎該經 氧化之第一金屬本體以形成具有至少一孔之第一金屬顆粒；及組合該等第一金屬顆粒與一第二金屬，且該第二金屬具有一比該等第一金屬顆粒之熔點為低之熔點。
  17. 一種製造電子元件之方法，包含：施加一傳導性接合材料至一電路板之一電極墊；在該電路板之電極墊上安裝一組件；進行第一迴焊加熱以加熱該組件與該電路板；安裝及成形一導線至該組件；以一密封樹脂密封該組件；施加一焊料糊至一印刷電路板之一導線端子；在該印刷電路板上安裝經樹脂密封之該組件以便將該導線放在該導線端子上；及進行第二迴焊加熱以加熱該組件與該印刷電路板，其中該傳導性接合材料包括：一第一金屬之金屬發泡體，具有至少一孔，且當在一比該第一金屬之熔點為高之溫度下加熱該金屬發泡體時，該孔吸收經熔化之第一金屬；及一第二金屬，具有一比該第一金屬之熔點為低之熔點。
  18. 如申請專利範圍第17項之製造電子元件之方法，其中在160℃之尖峰溫度下進行該第一迴焊加熱10分鐘。
  19. 如申請專利範圍第18項之製造電子元件之方法，其中在235℃之尖峰溫度下進行該第二迴焊加熱5分鐘。
TW102110855A 2012-05-28 2013-03-27 傳導性接合材料、製造該材料之方法及製造電子元件之方法 TW201347892A (zh)

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