TW201327700A - 接合楔 - Google Patents
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- TW201327700A TW201327700A TW101141052A TW101141052A TW201327700A TW 201327700 A TW201327700 A TW 201327700A TW 101141052 A TW101141052 A TW 101141052A TW 101141052 A TW101141052 A TW 101141052A TW 201327700 A TW201327700 A TW 201327700A
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
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Abstract
本發明揭示一種特別適用於製作導線晶粒外互連件之接合楔,其包含通向至毗鄰於一腳(腳)之後部之一凹口(凹口)或凹窩上之一孔隙(孔隙)。該腳包含一跟部部分(跟部)及一趾部部分(趾部)。當該接合楔在使用中時,將一導線自原料饋送穿過該孔隙及該凹口或凹窩,且使其在該腳下方通過且延伸超出該趾部。該趾部經組態以在接合程序期間減輕該導線之自由端(自由端)之向上位移。
Description
本發明係關於一種導線接合楔,且特定而言,係關於一種用於製作導線晶粒外互連件之接合楔。
本申請案主張2011年11月4日提出申請之第61/556,141號美國臨時申請案之申請日期之權益,該申請案之揭示內容以引用方式併入本文中。
一典型半導體晶粒具有其中形成積體電路之一前(「主動」)側、一後側及若干側壁。該等側壁與該前側在前邊緣處相接且與該後側在後邊緣處相接。半導體晶粒通常具備位於該前側處之互連墊(晶粒墊)以用於電互連該晶粒上之電路與其中部署該晶粒之裝置中之其他電路。如所提供之某些晶粒具有在該前側上沿著晶粒邊際中之一或多者之晶粒墊,且此等晶粒可稱為周邊墊晶粒。如所提供之其他晶粒具有在該前側處在晶粒之中心附近配置成一列或兩列之晶粒墊,且此等晶粒可稱為中心墊晶粒。可「重新繞路」晶粒以在晶粒之邊際中之一或多者處或附近提供一適合之互連墊配置。
可藉由數種互連件中之任一者電連接半導體晶粒與(舉例而言)一印刷電路板、一封裝基板或引線框架或另一晶粒中之其他電路。可藉由(舉例而言)線接合或覆晶互連件或突片互連件進行連接。
在球至縫合(ball-to-stitch)線接合互連件中,使用細導線
進行接觸位點之間的電連接,該等接觸位點可係(舉例而言)一晶粒上之一互連墊及一引線框架上之一接合指或一基板上之一接合位點。將該導線饋送穿過一毛細管線接合工具。使用該工具在第一接觸位點處形成一接合,將該導線自第一接觸位點牽引至第二接觸位點,且在第二接觸位點處形成一接合。通常,在導線之自由端處形成一球且藉由施加力及熱以及超音波能量而將該球接合至一第一接觸位點。然後,將該導線饋送穿過該工具且將該工具移動至一第二接觸位點,從而在該導線中形成一環,且再次藉由施加力及熱以及超音波能量而將該導線縫合接合(楔接合)於該第二位點處以完成互連。然後,使該導線在楔接合之末端處斷開,從而形成可在其上形成一球之一新自由端以重複該程序而形成另一對接觸位點之間的互連。
在縫合至縫合(stitch-to-stitch)線接合互連件中,使用一接合楔將導線之自由端縫合接合(楔接合)至第一接觸位點;然後將導線饋送穿過楔且將該楔移動至第二接觸位點;且使用該楔將該導線縫合接合於第二位點處。
已提出若干種方法用於增加積體電路晶片封裝中之主動半導體電路之密度,同時最小化封裝大小(封裝佔用面積、封裝厚度)。在一種用以製作具有一較小佔用面積之一高密度封裝之方法中,將具有相同或不同功能性之兩個或兩個以上半導體晶粒彼此上下堆疊且安裝於一封裝基板上。堆疊半導體晶粒之電互連帶來若干挑戰。已提出多種堆疊晶粒組態且可設計堆疊中之各種晶粒配置以至少部分
地對付此等挑戰。
可藉由形成互連件與各別晶粒上之選定對應墊之耐久接觸來使晶粒互連。另一選擇係,該等晶粒墊可具備互連端子,且可藉由形成互連跡線與各別晶粒上之選定對應互連端子之耐久接觸來使晶粒互連。一互連端子可包含(舉例而言)一突片接合或條帶接合,且可自該墊延伸超出晶粒邊緣(所謂的「晶粒外」端子)。
U.S.7,215,018及U.S.7,245,021闡述藉由將導電聚合物或環氧樹脂、細絲或線施加至堆疊晶粒之側面來對該堆疊進行垂直電互連。在所圖解說明之組態中,晶粒經堆疊以使得其互連邊緣彼此上下實質上垂直對準,以使得該堆疊呈現大體上平面且大體垂直於基板表面而定向之一互連堆疊面。而且,在所圖解說明之組態中,各別晶粒上之對應互連端子相對於基板表面配置成彼此上下垂直對準。因此,該等導電互連細絲或線實質上法向於基板表面而定向,且晶粒外端子伸入至該等互連細絲中。
可使用一楔接合工具來形成線接合晶粒外端子。首先將導線饋送穿過該工具中之一孔隙且饋送至接合腳下方,且使導線之自由端延伸以形成一伸長尾部。然後使該工具朝向接合墊移動,以使得該腳將導線按壓至該墊上,且施加熱及超音波能量以形成接合。然後使該工具遠離縫合接合移動且在縫合接合附近卡斷導線以由一伸長尾部形成一新自由端。然後在另一接合墊處重複該程序。
在晶粒上之任何特定墊配置中,該等墊可能不與下伏支
撐物上之接合位點適當地垂直對準。舉例而言,該等墊可能由於電路設計而在某種程度上不對準。或者,舉例而言,可期望使一晶粒上之一墊與下伏支撐物上之與一毗鄰晶粒墊垂直對準之一接合位點互連(亦即,實際上重新繞路該連接)。在此等例項中,可有必要採用各自包含縫合至該晶粒墊且延伸至並超出一互連晶粒邊緣之一導線之線接合晶粒外端子,其中在必要之情況下以不垂直於該互連晶粒邊緣之一角度引導該導線。
在延伸之導線之角度校正一不對準之情況下,該角度可在遠離晶粒邊緣之垂直線幾度之範圍中;在延伸之導線之角度提供重新繞路該連接之情況下,該角度可在大到與垂直線成約±50°或大於±50°之一範圍中。
藉由使楔接合工具圍繞一垂直軸旋轉而建立延伸之導線之角度以使得延伸之尾部在形成接合之前以一適當角度伸出。在第一連接位點(例如,晶粒墊)與第二連接位點(例如,一下伏支撐物上之一接合墊)充分對準之情況下,使該工具旋轉以使得延伸之導線實質上垂直於互連晶粒邊緣。在第一連接位點與第二連接位點不對準之情況下或在需要重新繞路該連接之情況下,使該工具旋轉以使得延伸之導線之自由端在該第二連接位點上方實質上垂直對準。
在使用楔接合技術形成導線晶粒外互連件之程序中,已觀察到在施加接合力及熱以及超音波能量期間伸長尾部可能以一角度向上位移。在透過穿過一鈍化層之一窄開口進
行連接之情況下,該向上位移可能會變得更糟。較佳地,該等導線幾乎在大體上平行於晶粒之主動側之一平面中延伸,且因此向上成角度之尾部係不可接受的。繼形成晶粒外互連件之後,可藉由將一平坦表面向下按壓至自由端上而平坦化該等尾部;但是已發現此可導致引線相對於互連晶粒邊緣之期望角度的改變。
因此,在一項一般態樣中,本發明之實施例以一種接合楔為特徵,該接合楔包含通向至毗鄰於一腳之後部之一凹口或凹窩上之孔隙。該腳包含一跟部部分及一趾部部分。當該接合楔在使用中時,將一導線自原料饋送穿過該孔隙及該凹口或凹窩,且使其在該腳下方通過且延伸超出該趾部。該趾部經組態以在接合程序期間侷限延伸之尾部且藉此減輕該導線之自由端之向上位移。
根據本發明之一態樣之一楔接合工具可包含一楔主體,該楔主體具有經組態以在將一導線接合至曝露於一組件之一主表面處的該組件之一接觸墊期間對該導線施加一向下力之一腳。該腳可包含一趾部及一跟部,其中該趾部之一前側可沿平行於該主表面之一橫向方向自該跟部之一前側位移且該趾部之一底側可沿一向上方向自該跟部之一底側遠離該主表面位移。該跟部可經組態以在接近該接觸墊的該導線之一第一位置處施加力以將該導線接合至該接觸墊。該趾部可經組態以在其中該跟部正施加該力之一狀態中同時在該導線之一第二位置處接觸該導線之一尾部以便設定在該第二位置處該導線在該組件主表面上面之一高
度。
在一或多項實例中,該趾部可具有其中具有一凹面之一下部表面,該凹面經組態以在將該導線接合至該接觸墊期間導引該導線之該尾部。
在一或多項實例中,該凹面之深度可小於由該導線之一外表面界定的該導線之一直徑。該凹面可呈沿該橫向方向自該趾部之該前側朝向該跟部延伸之一通道之形式。
在一或多項實例中,該組件可係一半導體晶粒。在一或多項實例中,在其中已將該導線接合至該接觸墊之一狀態中,該楔主體可經如此組態以影響具有一自由端的該導線之一尾部以具有沿垂直於由該主表面界定之一平面之一方向之一標高L,以使得介於該導線之該自由端與該第一位置之間的該導線之該尾部之長度S界定該尾部與該主表面之間的一角度,該角度小於45度。
在一或多項實例中,該角度可小於30度。
在一或多項實例中,該組件具有遠離該主表面延伸之一周邊邊緣且該楔接合工具可經組態以使該導線之自由端超出該周邊邊緣而安置。
在一或多項實例中,該楔主體可經組態以在接近該接觸墊之一位置處切斷該導線。
在一或多項實例中,該趾部可具有沿該橫向方向延伸於該跟部之該前側與該趾部之該前側之間的一平坦表面。
在一或多項實例中,該趾部在該趾部之該前側處之該底側可自該跟部在該跟部之該前側處之該底側向上位移達至
少該導線之一外表面之一直徑之一距離。
在一或多項實例中,該組件可包含複數個接觸墊且該等接觸墊可曝露於具有界定該組件之該主表面之一表面之一介電層中之至少一個開口內。該趾部在該趾部之該前側處之該底側可自該跟部在該跟部之該前側處之該底側向上位移達至少該導線之一外表面之一直徑加上沿該向上方向自該經曝露接觸墊至該組件之該主表面之一距離的一距離。
在一或多項實例中,該趾部之該前側可沿該橫向方向自該跟部之該前側位移達大於該導線之該直徑之兩倍之一距離。
根據本發明之另一態樣之一楔接合方法可包含接近曝露於一組件之一主表面處之一接觸墊定位具有自其延伸之一導線之一楔主體。可使該楔主體向下移動以使得該楔主體之一跟部在接近該接觸墊的該導線之一第一位置處對該導線施加一力以將該導線接合至該接觸墊,且使得在該跟部施加該力之一時間處自該跟部橫向且向上位移的該楔主體之一趾部之一底側在該導線之一第二位置處接觸該導線之一尾部。以此方式,該趾部可設定在該第二位置處該導線在該組件主表面上面之一高度。
在一或多項實例中,該趾部可具有其中具有一凹面之一下部表面,其中該凹面導引該導線之該尾部。在一或多項實例中,該凹面可呈自該趾部之該前側朝向該跟部延伸之一通道之形式。在一或多項實例中,該凹面可呈一成角度溝槽之形式。
在一或多項實例中,該凹面之深度可小於由該導線之一外表面界定的該導線之一直徑。
在一或多項實例中,該組件可係一半導體晶粒。在一或多項實例中,該導線之該尾部具有一自由端,且可執行該移動以使得沿垂直於由該主表面界定之一平面之一方向的該自由端之一標高L以及介於該導線之該自由端與該第一位置之間的該導線之長度S界定該導線之該尾部與該主表面之間的一角度,該角度小於45度。
在一或多項實例中,該角度可小於30度。
在一或多項實例中,該組件具有遠離該主表面延伸之一周邊邊緣且可執行該楔主體之移動以便形成具有延伸超出該周邊邊緣之該自由端之該導線。
在一或多項實例中,該方法可進一步包含在接近該接觸墊之一位置處切斷該導線。
在一或多項實例中,該趾部可具有沿該橫向方向延伸於該跟部之該前側與該趾部之該前側之間的一平坦表面。該方法可進一步包含使該導線與該平坦表面之至少一部分接觸。
在一或多項實例中,該趾部在該趾部之該前側處之該底側可自該跟部在該跟部之該前側處之該底側向上位移達至少該導線之一外表面之一直徑之一距離。
在一或多項實例中,該等接觸墊可曝露於具有界定該組件之該主表面之一表面之一介電層中之至少一個開口內。該趾部在該趾部之該前側處之該底側可自該跟部在該跟部
之該前側處之該底側向上位移達至少該導線之一外表面之一直徑加上沿該向上方向自該經曝露接觸墊至該組件之該主表面之一距離的一距離。
在一或多項實例中,該趾部之該前側可沿該橫向方向自該跟部之該前側位移達大於該導線之該直徑之兩倍之一距離。
現在將藉由參考圖式進一步詳細闡述本發明,該等圖式圖解說明替代實施例。該等圖式係示意性的,其展示本發明之特徵以及該等特徵與其他特徵及結構之關係,且未按比例製作。為改良呈現之清晰度,在圖解說明實施例之圖中,對應於其他圖式中所展示之元件之元件未全部經特別重新編號,但該等元件在所有圖中皆係可容易識別的。此外,為呈現之清晰起見,某些特徵在對於對本發明之一理解不必要之情況下未展示於圖中。
現在轉向圖1A及圖1B,此項技術中已知之一接合楔包含一楔主體。在該楔主體之尖端處有一腳。一傾斜孔隙通向至毗鄰該腳之背部之一凹口或凹窩。自一捲軸供應一導電導線並將其饋送穿過該孔隙且饋送至該腳下方。在所展示之實例中,導線之一尾部延伸超出該腳之前部達一極短距離。在其他實例中,該導線之自由端可更接近於該腳之前部而終止。
如圖1A、圖1B及圖1C中所展示之一第一接合位點包含連接至一基板中之電路(未展示)之一接合墊。一鈍化層中
之一開口在該接合位點處曝露該墊之一區域。多個接合位點中之任一者可構成該第一接合位點;特定而言,例如,該第一接合位點可係一半導體晶粒上之一互連墊。
為在一連接位點上形成一縫合接合,使接合工具朝向該位點移動,如圖1A中由虛線箭頭m所指示。當導線接觸位點時,施加力以抵靠位點按壓導線,且施加熱及超音波能量以完成該接合,如圖1B中所展示。然後在提升且遠離所完成之接合橫向移動工具時將導線饋送穿過接合工具(沿一預定路徑朝向一第二接合位點而行),從而形成一導線環,如圖1C中所展示。
圖2A及圖2B展示安裝至一支撐物上之一晶粒。該晶粒具備縫合導線晶粒外端子。在此例項中,將該支撐物展示為一封裝基板。多種結構中之任一者可構成該支撐物;在其他實例中,舉例而言,該支撐物可係另一晶粒或一印刷電路板。在此實例中,該晶粒由一晶粒附著膜背襯,且使用一晶粒安裝黏合劑安裝至基板之一晶粒安裝表面上。該晶粒在基板上經定向以使得晶粒之互連邊緣上覆於一列接合墊上,且經對準以使得晶粒墊與基板上之該列中之接合墊大體上垂直對準。穿過晶粒之前側處之一鈍化層之開口在接合位點處曝露晶粒墊之若干區域。虛線箭頭A展示基板上之接合墊中之某些接合墊之中心線。晶粒墊中之某些晶粒墊與下伏接合墊充分對準,而其他晶粒墊稍微不對準。在晶粒墊與下伏接合墊充分對準之情況下,晶粒外端子導線垂直於該等晶粒外端子導線在其上方延伸之互連晶
粒邊緣而定向。在一晶粒墊與下伏接合墊稍微不對準之情況下,晶粒外端子導線經定向為偏離互連晶粒邊緣之垂直線達一適合之小角度。在此實例中之一個例項中,一晶粒墊並不既定電互連至該晶粒墊在其上方對準之接合墊,而是連接至一毗鄰接合墊;且在此例項中,使晶粒外端子導線成角度以使得導線之自由端上覆於既定接合墊上。
如圖2A及圖2B中之一晶粒至一或多個其他晶粒之互連或一晶粒至一下伏支撐物(諸如一基板或印刷電路板)中之電路之連接係藉助於晶粒外端子伸入至其中的垂直互連材料跡線而進行。在跡線上連接至一支撐物上之電路,該互連跡線具有:一腳部分,其接觸支撐物中之接合墊之表面;及一垂直部分,晶粒外端子伸入至該垂直部分中。
如所述,一堆疊中之兩個或兩個以上晶粒可以此方式互連。在堆疊之前給互連側壁及互連邊緣以及晶粒之前側塗佈一電絕緣膜以防止總成中之不想要的電接觸。穿過晶粒墊處之電絕緣塗層形成開口以准許晶粒外端子之接觸。
在特定實例中,互連跡線或線由一導電材料形成,以可流動形式施加該導電材料且然後使其固化或允許其固化以完成導電跡線或線。該材料可係導電的或以可流動形式至少在某種程度上可係不導電的。在所施加之材料在固化之前不導電或在一不充足程度上導電之情況下,該固化使該材料充足地導電或該材料可係充足地導電。
此等材料包含(舉例而言)導電聚合物,該等導電聚合物包含含在一可固化有機聚合物基質(舉例而言,導電(例
如,經填充)環氧樹脂或導電油墨)中之導電微粒(例如,導電金屬粒子);且包含(舉例而言)以一液體載體遞送之導電微粒。在特定實施例中,該互連材料係諸如一可固化導電聚合物或一導電油墨之一導電聚合物。對於某些材料,如可理解,該固化可包含一燒結程序。
在某些實例中,該導電材料包含一可固化聚合物基質(諸如一可固化環氧樹脂)中之導電粒子。在特定的此等實例中,該導電材料包含一環氧樹脂基質中之鉍、銅及錫粒子;在其他此等實例中,該導電材料包含一環氧樹脂基質中之鉍、銅、錫及銀粒子。
適合之互連材料之特定實例包含導電膏,該等導電膏包含具有各種比例之Cu、Bi及Sn粒子或Cu、Bi、Sn及Ag粒子之一有機聚合物。在固化期間,此等材料可在跡線自身中形成金屬間化合物(特定而言,例如,CuSn金屬間化合物);且在一接合墊或互連端子或連接位點之表面具備金之情況下,舉例而言,此等材料可在該跡線與該墊或位點之表面之界面處形成AuSn金屬間化合物。
適合之互連材料之其他特定實例包含填充有銀之環氧樹脂。
可使用一施加工具(諸如,一注射器或一噴嘴或一針)施加互連材料。該材料沿大體上朝向晶粒墊或互連端子或接合位點之一沈積方向自該工具排出,且使該工具在所呈現之堆疊面上方沿一工作方向移動以形成一跡線或線。可自該工具以一連續流擠出該材料;或者,可以脈衝形式輸送
該材料之擠出;或者,可藉由閥調中斷該流;或者,該材料可逐滴地自該工具排出。在某些實施例中,該材料作為一微滴射流自該工具排出,且經沈積為在與一堆疊面表面接觸時或繼與一堆疊面表面接觸之後聚結之點。在T.Caskey等人的標題為「Electrical interconnect formed by pulsed dispense」之第12/124,097號美國專利申請案中闡述各種脈衝施配模式,該申請案係在2008年5月20日提出申請且特此以引用方式併入本文中。
在某些實例中,一次一個地形成該等跡線。在某些實例中,在一單個互連操作中形成一個以上互連跡線,且在某些此等實例中,在一單個操作中(或在少於跡線之數目的數目個操作中)形成一給定總成上之所有互連跡線。在此等例項中,該施加工具可包含一起組合成大體上平行於晶粒邊緣之一列之若干個針或噴嘴。
如上文所述,已觀察到,在使用諸如(舉例而言)圖1A中所展示之已知楔接合工具形成縫合導線晶粒外互連件中,縫合接合程序導致延伸之導線急劇向上成角度,亦即,完全在晶粒之主動側之平面上面。圖3A、圖3B及圖3C中圖解說明此不期望之結果。圖3A展示如圖1A中之一已知設計之一楔接合工具,該楔接合工具隨時準備形成一縫合導線晶粒外互連件:已將導線饋送穿過孔隙及凹口或凹窩且饋送至腳下方;且該導線之一長尾部使自由導線端充分延伸超出該腳之前部。
為在一晶粒墊上之一位點處形成一縫合導線晶粒外端
子,使該接合工具朝向該位點移動,如由圖3A中之虛線箭頭m所指示。當該導線接觸該位點時,施加力以抵靠該位點按壓該導線,且施加熱及超音波能量以完成該接合,如圖3B中所展示。然後在提升且遠離該接合移動該工具時將導線饋送穿過該工具,且當已牽引穿過一適合長度之導線時,在所完成之楔接合附近卡斷該導線,以在一長尾部上形成一新自由導線端。圖3C中展示所完成之縫合導線晶粒外端子。然後可將該工具移動至另一晶粒墊且重複該程序以在彼處形成一晶粒外端子。
如圖3B及圖3C圖解說明,由此程序產生之晶粒外端子之長引線急劇向上成角度,完全在晶粒之主動側之平面上面。根據本發明避免或實質上減少此不期望之狀況,如圖4A、圖4B及圖4C中所展示。
現在轉向圖4A及圖4B,根據本發明之一實施例之一接合楔包含一楔主體。在該楔主體之尖端處有一腳,該腳包含一跟部部分及一趾部部分。在一項實例中,該趾部之前部之底側可沿向上之一方向自該跟部之底側偏移(亦即,位移)達一尺寸O,且該跟部之前側可沿一橫向方向(水平地)自該趾部之前側縮進(亦即,位移)達一尺寸n。在一項實例中,尺寸n可大於導線之一直徑之兩倍。在一項實例中,如圖4B中所展示,該趾部可具有沿該橫向方向延伸於跟部之前側與趾部之前側之間的一平坦表面且在接合操作期間此平坦表面可接觸導線之自由端。一傾斜孔隙通向至毗鄰跟部之背部之一凹口或凹窩。自一捲軸供應一導電導
線且將其饋送穿過該孔隙且饋送至該腳下方。導線之自由端充分延伸超出趾部之前側。尺寸O可至少與該導線在該導線之一外表面處之一直徑一樣大。在如圖4A至圖4C中所見之一項實例中,尺寸O可係等於或大於該導線在該導線之一外表面處之直徑加上沿向上方向自經曝露接觸墊至組件之主表面之一距離之一總和之一距離。以此方式,該趾部在其前側處之底側可自該跟部在該跟部之前側處之底側向上位移達至少該導線之直徑(在其外表面處)與沿向上方向自經曝露接觸墊至組件之主表面之一距離的一距離。
圖4A展示根據本發明之一實施例之楔接合工具,該楔接合工具隨時準備形成一縫合導線晶粒外互連件:已將自一捲軸供應之一導線饋送穿過孔隙及凹口或凹窩且饋送至腳下方;且該導線之一長尾部使自由導線端充分延伸超出該趾部之前部。看到該楔接合工具定位在曝露於一組件之一主表面處之一接觸墊上面。該接觸墊可係一半導體晶粒之一晶粒墊,且一介電層(例如,鈍化層)可具有界定該組件之主表面之一表面。舉例而言,該接觸墊之一部分可曝露於該介電層中之一開口內。如本文中所使用,一導電元件「曝露於」一結構之一表面處之一陳述指示該導電元件可用於與沿垂直於該表面之一方向自該結構之外側朝向該表面移動之一理論點接觸。因此,曝露於一結構之一表面處之一端子或其他導電元件可自此表面伸出;可與此表面齊平;或可相對於此表面凹入且透過該結構中之一孔或凹陷曝露。
為在曝露於一組件晶粒墊之一主表面處之一接觸墊上之一位點處形成一縫合導線晶粒外端子,使該接合工具朝向該位點移動,如由圖4A中之虛線箭頭m所指示。當該導線接觸該位點時,施加力以抵靠該位點按壓該導線,且施加熱及超音波能量以完成該接合,如圖4B中所展示。然後在提升且遠離該接合移動該工具時將導線饋送穿過該工具,且當已牽引穿過一適合長度之導線時,在所完成之楔接合附近藉由楔主體切斷(例如,卡斷)該導線,以在一長尾部上形成一新自由導線端。圖4C中展示所完成之縫合導線晶粒外端子。如所圖解說明,導線之自由端可超出該組件之一周邊邊緣安置,此邊緣遠離組件主表面延伸。然後可將該工具移動至另一晶粒墊且重複該程序以在彼處形成一晶粒外端子。
如圖4B及4C圖解說明,在接合程序期間長尾部與趾部之接觸減輕導線之自由端之向上位移。特定而言,圖4C中之晶粒外端子導線之自由端在晶粒之主動側之平面上面保持於一尺寸L內。然而,L之精確尺寸係導線之尾部之自第一位置至導線之自由端之長度之一函數。如圖4B中進一步所見,當跟部接觸導線之一第一位置以將導線接合至接觸墊時,趾部可同時接觸導線之一位置J2,其可設定導線在組件主表面上面在第二位置J2處之一高度H。
圖4A、圖4B展示其中毗鄰晶粒墊上方之開口之鈍化層係足夠軟以在接合程序期間藉由導線之力而變形之一實例中之外觀。圖5A圖解說明在其中毗鄰晶粒墊上方之開口之
鈍化層構成比圖4A、圖4B中所展示之材料更堅固之一材料之一實例中在接合程序期間之一晶粒外端子之一製作階段。在圖5A及圖5B中所見之實例中,毗鄰該開口之鈍化層抵抗由導線所致的變形,且因此,在接合程序期間導線在彼點處彎曲。如略圖所暗示,此可導致導線之自由端之向上位移之甚至更加改良之減輕(一較小尺寸L)。
尺寸L將根據長尾部之長度及導線之直徑且根據腳之底側之尺寸O及n而不同,且腳之尺寸可經選擇以達成一期望之尺寸L。在其中尺寸n係0.135 mm且尺寸O係0.025 mm之一項實例中,超出跟部之前部的尾部之延伸部可係約0.235 mm,且在一項實例中導線直徑可係0.018 mm,且自由端之標高L可係約0.050 mm或小於0.050 mm。亦可看出,沿垂直於由主表面界定之一平面之一方向的該自由端之標高L以及介於導線之自由端與第一位置之間的導線之尾部之長度S界定尾部與主表面之間的一角度,該角度小於45度。尾部之長度可界定一直角三角形(其標高係L)之斜邊,在此情形中,L等於S乘以此角度(亦即,導線之尾部與組件主表面之間的角度)之正弦。在一項實例中,該角度可小於30度。在另一實例中,該角度之度量可甚至實質上小於30度。
在某些實例中,可藉由在趾部之下部表面處形成一向上凹面而進一步改善楔尖端,在接合程序期間該趾部在該凹面中接觸導線。一實例顯現於圖6A中,圖6A展示跨越如圖6B中之A-A處所指示之趾部之尖端之一剖視圖。該凹面
有助於在接合程序期間導引導線之尾部且可有助於在接合程序期間維持導線尾部在趾部下方之對準,以確保長引線具有相對於晶粒邊緣之期望之角度。該凹面可具有一大體上彎曲之剖面,如此實例中所展示;或者其可具有沿橫向方向自趾部之前側朝向跟部延伸之一通道之形式或呈一成角度溝槽之形式。該溝槽或曲面之最大深度Dc可在趾部之剖面之中心處,以使得在接合程序期間導線保持與楔腳之中線對準。該凹面之深度可小於指定導線之直徑,且通常小於導線直徑之一半。
為穩定性起見,將趾部形成為楔尖端之一整體部分可係較佳的。在某些實施例中,楔之趾部部分構成具有帶有一跟部但缺少一趾部之一腳之一接合楔之一附接附件。以此方式,一現成的楔可經改裝以供在一特定應用中使用。
如將瞭解,可將具有如上文所闡述而形成之縫合導線晶粒外互連件之一晶粒安裝至一下伏支撐物上且電連接至該下伏支撐物中之電路。另一選擇係,可將具有如上文所闡述而形成之縫合導線晶粒外互連件之一晶粒堆疊安裝至一下伏支撐物上且電連接至該下伏支撐物中之電路。
上文所闡述之本發明之實施例之各種特徵可在不背離本發明之範疇或精神之情況下以除如上文具體闡述之方式以外之方式組合。本發明意欲涵蓋上文所闡述之本發明之實施例之所有此等組合及變化形式。
A‧‧‧虛線箭頭
Dc‧‧‧最大深度
H‧‧‧高度
J2‧‧‧位置/第二位置
L‧‧‧尺寸/標高
m‧‧‧虛線箭頭
n‧‧‧尺寸
O‧‧‧尺寸
S‧‧‧長度
圖1A及圖1B係以一剖視圖展示此項技術中已知之一接
合楔之示意圖,該接合楔經部署以在一第一接合位點處形成一楔接合。
圖1C係展示如圖1A及圖1B中所展示而形成的一第一接合位點處之一所完成楔接合之一示意圖。
圖2A係展示具有一縫合導線晶粒外端子之一晶粒之一剖視圖中之一示意圖,該晶粒安裝至一基板上。
圖2B係以平面圖展示具有相對於互連晶粒邊緣以各種角度伸出之縫合導線晶粒外端子之一晶粒之一示意圖,該晶粒安裝至一基板上。
圖3A、圖3B係以剖視圖展示使用圖1A及圖1B中所展示類型之一接合楔形成一縫合導線晶粒外端子之示意圖。
圖3C係以剖視圖展示如圖3A及圖3B中所展示而形成的一縫合導線晶粒外端子之一略圖。
圖4A、圖4B係以剖視圖展示使用根據一實施例之一接合楔形成一縫合導線晶粒外端子之示意圖。
圖4C係以剖視圖展示根據一實施例如圖4A及圖4B中所展示而形成的一縫合導線晶粒外端子之一略圖。
圖5A係以剖視圖展示使用根據另一實施例之一接合楔形成一縫合導線晶粒外端子之一示意圖。
圖5B係以剖視圖展示根據一實施例如圖5A中所展示而形成的一縫合導線晶粒外端子之一示意圖。
圖6A及圖6B係以剖視圖展示根據一實施例之一接合楔之示意圖。圖6A之剖視圖係如圖6B中之A-A處所展示而截取,且圖6B之剖視圖係如圖6A中之B-B處所展示而截取。
H‧‧‧高度
J2‧‧‧位置/第二位置
L‧‧‧尺寸/標高
O‧‧‧尺寸
Claims (22)
- 一種楔接合工具,其包括:一楔主體,其具有經組態以在將一導線接合至曝露於一組件之一主表面處的該組件之一接觸墊期間對該導線施加一向下力之一腳,該腳包含一趾部及一跟部,該趾部之一前側沿平行於該主表面之一橫向方向自該跟部之一前側位移且該趾部之一底側沿一向上方向自該跟部之一底側遠離該主表面位移,該跟部經組態以在接近該接觸墊的該導線之一第一位置處施加該力以將該導線接合至該接觸墊,且該趾部經組態以在其中該跟部正施加該力之一狀態中同時在該導線之一第二位置處接觸該導線之一尾部以便設定在該第二位置處該導線在該組件主表面上面之一高度。
- 如請求項1之楔接合工具,其中該趾部具有其中具有一凹面之一下部表面,該凹面經組態以導引該導線之該尾部。
- 如請求項1之楔接合工具,其中該凹面之深度小於由該導線之一外表面界定的該導線之一直徑。
- 如請求項1之楔接合工具,其中該組件係一半導體晶粒,且在其中已將該導線接合至該接觸墊之一狀態中,該楔主體經如此組態以影響具有一自由端的該導線之一尾部以具有沿垂直於由該主表面界定之一平面之一方向之一標高L,以使得介於該導線之該自由端與該第一位置之間的該導線之該尾部之一長度S界定該尾部與該主 表面之間的一角度,該角度小於45度。
- 如請求項4之楔接合工具,其中該角度小於30度。
- 如請求項4之楔接合工具,其中該組件具有遠離該主表面延伸之一周邊邊緣,且該楔接合工具經組態以使該導線之該自由端超出該周邊邊緣而安置。
- 如請求項1之楔接合工具,其中該楔主體經組態以在接近該接觸墊之一位置處切斷該導線。
- 如請求項1之楔接合工具,其中該趾部具有沿該橫向方向延伸於該跟部之該前側與該趾部之該前側之間的一平坦表面。
- 如請求項1之楔接合工具,其中該趾部在該趾部之該前側處之該底側自該跟部在該跟部之該前側處之該底側向上位移達至少該導線在其一外表面處之一直徑之一距離。
- 如請求項9之楔接合工具,其中該等接觸墊曝露於具有界定該組件之該主表面之一表面之一介電層中之至少一個開口內,其中該趾部在該趾部之該前側處之該底側自該跟部在該跟部之該前側處之該底側向上位移達至少該導線在其一外表面處之一直徑加上沿該向上方向自該經曝露接觸墊至該組件之該主表面之一距離的一距離。
- 如請求項1之楔接合工具,其中該趾部之該前側沿該橫向方向自該跟部之該前側位移達大於該導線之該直徑之兩倍之一距離。
- 一種楔接合方法,其包括: 接近具有一主表面之一組件之一接觸墊定位具有自其延伸之一導線之一楔主體,且使該楔主體向下移動以使得該楔主體之一跟部在接近該接觸墊的該導線之一第一位置處對該導線施加一力以將該導線接合至該接觸墊,且使得在該跟部施加該力之一時間處自該跟部橫向且向上位移的該楔主體之一趾部之一底側在該導線之一第二位置處接觸該導線之一尾部以便設定在該第二位置處該導線在該組件主表面上面之一高度。
- 如請求項12之楔接合方法,其中該趾部具有其中具有一凹面之一下部表面,其中該凹面導引該導線之該尾部。
- 如請求項12之楔接合方法,其中該凹面之深度小於由該導線之一外表面界定的該導線之一直徑。
- 如請求項12之楔接合方法,其中該組件係一半導體晶粒,且該導線之該尾部具有一自由端,且執行該移動以使得沿垂直於由該主表面界定之一平面之一方向的該自由端之一標高L以及介於該導線之該自由端與該第一位置之間的該導線之一長度S界定該導線之該尾部與該主表面之間的一角度,該角度小於45度。
- 如請求項15之楔接合方法,其中該角度小於30度。
- 如請求項16之楔接合方法,其中該組件具有遠離該主表面延伸之一周邊邊緣,且執行該移動以便形成具有延伸超出該周邊邊緣之該自由端之該導線。
- 如請求項12之楔接合方法,其進一步包括在接近該接觸墊之一位置處切斷該導線。
- 如請求項12之楔接合方法,其中該趾部具有沿該橫向方向延伸於該跟部之該前側與該趾部之該前側之間的一平坦表面,該方法進一步包括使該導線與該平坦表面之至少一部分接觸。
- 如請求項12之楔接合方法,其中該趾部在該趾部之該前側處之該底側自該跟部在該跟部之該前側處之該底側向上位移達至少該導線之一外表面之一直徑之一距離。
- 如請求項20之楔接合方法,其中該等接觸墊曝露於具有界定該組件之該主表面之一表面之一介電層中之至少一個開口內,其中該趾部在該趾部之該前側處之該底側自該跟部在該跟部之該前側處之該底側向上位移達至少該導線之一外表面之一直徑加上沿該向上方向自該經曝露接觸墊至該組件之該主表面之一距離的一距離。
- 如請求項12之楔接合方法,其中該趾部之該前側沿該橫向方向自該跟部之該前側位移達大於該導線之該直徑之兩倍之一距離。
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US201161556141P | 2011-11-04 | 2011-11-04 |
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TW201327700A true TW201327700A (zh) | 2013-07-01 |
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TW101141052A TW201327700A (zh) | 2011-11-04 | 2012-11-05 | 接合楔 |
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TW (1) | TW201327700A (zh) |
WO (1) | WO2013067270A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI585927B (zh) * | 2014-02-21 | 2017-06-01 | 新川股份有限公司 | 半導體裝置的製造方法、半導體裝置以及打線裝置 |
TWI615907B (zh) * | 2014-09-16 | 2018-02-21 | Toshiba Memory Corp | 導線接合裝置及半導體裝置 |
CN110497166A (zh) * | 2019-08-13 | 2019-11-26 | 成都精蓉创科技有限公司 | 一种用于全自动丝焊机的深腔焊劈刀及其生产工艺 |
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TWI543284B (zh) | 2014-02-10 | 2016-07-21 | 新川股份有限公司 | 半導體裝置的製造方法以及打線裝置 |
CN110783213B (zh) * | 2019-10-15 | 2021-08-17 | 中国电子科技集团公司第二十九研究所 | 一种引线键合用楔形劈刀及制备方法 |
CN110899888A (zh) * | 2019-12-04 | 2020-03-24 | 成都精蓉创科技有限公司 | 一种可全自动穿丝的劈刀及其加工工艺 |
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US3690538A (en) * | 1970-02-25 | 1972-09-12 | Gaiser Tool Co | Bonding tool |
US4030657A (en) * | 1972-12-26 | 1977-06-21 | Rca Corporation | Wire lead bonding tool |
US3971499A (en) * | 1974-09-03 | 1976-07-27 | Tribotech | Bonding tool |
JPS5489958A (en) * | 1977-12-27 | 1979-07-17 | Toshiba Corp | Wire bonding apparatus |
JPS62190734A (ja) * | 1986-02-17 | 1987-08-20 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
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JPH01268038A (ja) * | 1988-04-19 | 1989-10-25 | Sanyo Electric Co Ltd | ワイヤボンディング方法とボンディングツール及び半導体装置 |
JPH02237119A (ja) * | 1989-03-10 | 1990-09-19 | Nippon Steel Corp | バンプ電極形成方法 |
DE3912580C2 (de) * | 1989-04-17 | 1997-08-21 | F&K Delvotec Bondtechnik Gmbh | Bondstempel |
US5007576A (en) * | 1989-12-26 | 1991-04-16 | Hughes Aircraft Company | Testable ribbon bonding method and wedge bonding tool for microcircuit device fabrication |
JPH0779118B2 (ja) * | 1992-12-11 | 1995-08-23 | 日本電気株式会社 | ワイヤーボンディング装置 |
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JPH1174299A (ja) * | 1997-08-28 | 1999-03-16 | Sony Corp | バンプ形成装置およびバンプ形成方法 |
US7215018B2 (en) | 2004-04-13 | 2007-05-08 | Vertical Circuits, Inc. | Stacked die BGA or LGA component assembly |
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WO2009060670A1 (ja) * | 2007-11-09 | 2009-05-14 | Sanken Electric Co., Ltd. | 半導体装置及びその製造方法 |
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2012
- 2012-11-02 US US13/667,289 patent/US20130119117A1/en not_active Abandoned
- 2012-11-02 WO PCT/US2012/063186 patent/WO2013067270A1/en active Application Filing
- 2012-11-05 TW TW101141052A patent/TW201327700A/zh unknown
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI585927B (zh) * | 2014-02-21 | 2017-06-01 | 新川股份有限公司 | 半導體裝置的製造方法、半導體裝置以及打線裝置 |
US9887174B2 (en) | 2014-02-21 | 2018-02-06 | Shinkawa Ltd. | Semiconductor device manufacturing method, semiconductor device, and wire bonding apparatus |
TWI615907B (zh) * | 2014-09-16 | 2018-02-21 | Toshiba Memory Corp | 導線接合裝置及半導體裝置 |
CN110497166A (zh) * | 2019-08-13 | 2019-11-26 | 成都精蓉创科技有限公司 | 一种用于全自动丝焊机的深腔焊劈刀及其生产工艺 |
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WO2013067270A1 (en) | 2013-05-10 |
US20130119117A1 (en) | 2013-05-16 |
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