TW201323524A - Curable composition, cured object and optical semiconductor device - Google Patents

Curable composition, cured object and optical semiconductor device Download PDF

Info

Publication number
TW201323524A
TW201323524A TW101144154A TW101144154A TW201323524A TW 201323524 A TW201323524 A TW 201323524A TW 101144154 A TW101144154 A TW 101144154A TW 101144154 A TW101144154 A TW 101144154A TW 201323524 A TW201323524 A TW 201323524A
Authority
TW
Taiwan
Prior art keywords
group
polyoxyalkylene
curable composition
sio
cured product
Prior art date
Application number
TW101144154A
Other languages
Chinese (zh)
Inventor
Kouji Nakanishi
Tetsuya Nemoto
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2012184134A external-priority patent/JP2013139547A/en
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW201323524A publication Critical patent/TW201323524A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8426Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40Organosilicon compounds, e.g. TIPS pentacene
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)

Abstract

A curable composition includes: a polysiloxane (A) of specific structure having at least two alkenyl groups, a polysiloxane (B) having at least one or more siloxanes of two aryl groups bonded to the same silicon atom which for forming polysiloxane chain and a catalyst for a hydrosilation reaction (C). The curable composition of the invention forms a cured object excellent in moisture resistance. Even when an optical semiconductor, which includes the cured object formed by the curable composition of the invention as a sealing material and so on, is used for long period, the possibility of decrease in emitting property of an emitting device due to permeation of water vapor is small.

Description

硬化性組成物、硬化物及光學半導體裝置 Curable composition, cured product, and optical semiconductor device

本發明關於一種硬化性組成物、硬化物及光學半導體裝置。 The present invention relates to a curable composition, a cured product, and an optical semiconductor device.

作為LED等半導體發光裝置的密封劑,存在有矽氫化反應硬化型矽酮類樹脂組成物等,使用對熱或光具有高耐久性的矽酮類樹脂。矽氫化反應硬化型矽酮類樹脂組成物理想的是硬化性良好,且可形成折射率及透光率大、對基材的密接性高、高硬度、表面黏性少的硬化物。 As a sealing agent for a semiconductor light-emitting device such as an LED, there is a composition of a hydrazine hydrogenation reaction-curable fluorenone-based resin, and an fluorenone-based resin having high durability against heat or light is used. The hydrogenation-reaction-curable fluorenone-based resin composition preferably has a good curability and can form a cured product having a large refractive index and a high light transmittance, high adhesion to a substrate, high hardness, and low surface viscosity.

作為此種矽酮類樹脂組成物,於專利文獻1中揭示了一種硬化性有機聚矽氧烷組成物,其含有:特定的直鏈狀二有機聚矽氧烷、特定的支鏈狀有機聚矽氧烷、於一分子中具有至少平均2個與矽原子鍵結的芳基與至少平均2個與矽原子鍵結的氫原子的有機聚矽氧烷及矽氫化反應用催化劑。 As such an anthrone-based resin composition, Patent Document 1 discloses a curable organopolyoxane composition containing a specific linear diorganopolyoxyalkylene group and a specific branched organic polycondensation. A siloxane which has at least two aryl groups bonded to a ruthenium atom in one molecule and an organopolyoxy siloxane having at least two hydrogen atoms bonded to a ruthenium atom, and a catalyst for hydrogenation reaction.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2008-050494號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-050494

然而,先前的矽酮類樹脂具有耐濕性差的缺點,若用矽酮類樹脂組成物密封發光元件,則存在如下問題:由於長時間使用而造成水蒸氣透過密封材,產生發光元件的發光特性降低。 However, the conventional anthrone-based resin has a disadvantage of poor moisture resistance, and when the light-emitting element is sealed with an anthrone-based resin composition, there is a problem that water vapor is transmitted through the sealing material due to long-term use, and the light-emitting characteristics of the light-emitting element are generated. reduce.

本發明的目的在於提供一種可形成耐濕性優異的硬化物的含有矽酮類樹脂的硬化性組成物、及包含所述硬化物的光學半導體裝置。 An object of the present invention is to provide a curable composition containing an anthrone-based resin which can form a cured product excellent in moisture resistance, and an optical semiconductor device including the cured product.

達成所述目的的本發明如下所述。 The present invention for achieving the object is as follows.

[1]一種硬化性組成物,其含有:下述式(1)所表示的具有至少2個烯基的聚矽氧烷(A)、下述式(2)所表示的聚矽氧烷(B)、以及矽氫化反應用催化劑(C),[化1](R1 3SiO1/2)a(RAr1 2SiO2/2)b(R2 2SiO2/2)c(R3SiO3/2)d(SiO4/2)e(XO1/2)f (1) [1] A curable composition comprising a polyoxyalkylene (A) having at least two alkenyl groups represented by the following formula (1) and a polyoxyalkylene represented by the following formula (2) ( B), and a catalyst for hydrogenation reaction (C), [Chemical Formula 1] (R 1 3 SiO 1/2 ) a (R Ar1 2 SiO 2/2 ) b (R 2 2 SiO 2/2 ) c (R 3 SiO 3/2 ) d (SiO 4/2 ) e (XO 1/2 ) f (1)

(式中,R1、R2及R3分別獨立地表示烷基、烯基、芳基或密接性基;其中,於同一矽原子上鍵結的2個R2中的其中一個R2是芳基時,另一個R2並非芳基;而且,所有的R1、R2及R3中的至少2個是烯基;RAr1表示芳基;X表示氫原子或碳數為1~3的烷基;a、c、e及f分別獨立地表示0以上的整數;b及d分別獨立地表示1以上的整數) (Wherein, R 1, R 2 and R 3 each independently represent an alkyl group, an alkenyl group, an aryl group, or adhesiveness with the substrate; wherein, on the same silicon atom bonded to two of R 2 wherein R 2 is a In the case of an aryl group, the other R 2 is not an aryl group; moreover, at least two of all of R 1 , R 2 and R 3 are alkenyl groups; R Ar1 represents an aryl group; X represents a hydrogen atom or has a carbon number of 1 to 3 Alkyl; a, c, e, and f each independently represent an integer of 0 or more; b and d each independently represent an integer of 1 or more)

(式中,R4分別獨立地表示1價烴基;RAr2分別獨立表示芳基;n表示1以上的整數)。 (wherein R 4 each independently represents a monovalent hydrocarbon group; R Ar2 each independently represents an aryl group; and n represents an integer of 1 or more).

[2]根據上述[1]所述的硬化性組成物,所述聚矽氧烷(B)是於所述通式(2)中n≧2的化合物。 [2] The curable composition according to the above [1], wherein the polyoxyalkylene (B) is a compound of n≧2 in the above formula (2).

[3]根據上述[1]或[2]所述的硬化性組成物,所述聚矽氧烷(B)的含量是相對於所述聚矽氧烷(A)100質量份而言為10質量份~100質量份。 [3] The curable composition according to the above [1] or [2], wherein the content of the polyoxyalkylene (B) is 10 parts by mass based on 100 parts by mass of the polyoxyalkylene (A). Parts by mass to 100 parts by mass.

[4]一種硬化物,其是藉由對根據上述[1]~[3]中任一項所述的硬化性組成物進行硬化而得。 [4] A cured product obtained by curing the curable composition according to any one of the above [1] to [3].

[5]一種光學半導體裝置,其包含:半導體發光元件、與被覆該半導體發光元件的根據上述[4]所述的硬化物。 [5] An optical semiconductor device comprising: a semiconductor light-emitting device; and the cured product according to [4] above which the semiconductor light-emitting device is coated.

本發明的硬化性組成物可形成耐濕性優異的硬化物。包含由本發明的硬化性組成物所形成的硬化物作為密封材的光學半導體裝置即使長時間使用,由於水蒸氣的透過而造成發光元件的發光特性降低的可能亦小。 The curable composition of the present invention can form a cured product excellent in moisture resistance. Even if the optical semiconductor device including the cured product formed of the curable composition of the present invention as a sealing material is used for a long period of time, the light-emitting characteristics of the light-emitting element may be lowered due to the transmission of water vapor.

<硬化性組成物> <Sclerosing composition>

本發明的硬化性組成物含有:下述式(1)所表示的具有至少2個烯基的聚矽氧烷(A)、下述式(2)所表示的聚矽氧烷(B)、矽氫化反應用催化劑(C),[化1](R1 3SiO1/2)a(RAr1 2SiO2/2)b(R2 2SiO2/2)c(R3SiO3/2)d(SiO4/2)e(XO1/2)f (1) The curable composition of the present invention contains a polyoxyalkylene (A) having at least two alkenyl groups represented by the following formula (1), and a polyoxyalkylene (B) represented by the following formula (2). Catalyst for hydrogenation reaction (C), [Chemical Formula 1] (R 1 3 SiO 1/2 ) a (R Ar1 2 SiO 2/2 ) b (R 2 2 SiO 2/2 ) c (R 3 SiO 3/2 ) d (SiO 4/2 ) e (XO 1/2 ) f (1)

(式中,R1、R2及R3分別獨立地表示烷基、烯基、芳基或密接性基。其中,於同一矽原子上鍵結的2個R2中的其中一個R2是芳基時,另一個R2並非芳基。而且,所有的R1、R2及R3中的至少2個是烯基。RAr1表示芳基。X表示氫原子或碳數為1~3的烷基。a、c、e及f分別獨立地表示0以上的整數。b及d分别独立地表示1以上的整数) (Wherein, R 1, R 2 and R 3 each independently represent an alkyl group, an alkenyl group, an aryl group, or adhesiveness with the substrate. Wherein, on the same silicon atom bonded to two of R 2 wherein R 2 is a In the case of an aryl group, the other R 2 is not an aryl group. Further, at least two of all of R 1 , R 2 and R 3 are alkenyl groups. R Ar1 represents an aryl group. X represents a hydrogen atom or has a carbon number of 1 to 3 The alkyl groups a, c, e, and f each independently represent an integer of 0 or more. b and d each independently represent an integer of 1 or more)

(式中,4個R4分別獨立地表示1價烴基。RAr2分別獨立表示芳基。n表示1以上的整數)。 (In the formula, four R 4 each independently represent a monovalent hydrocarbon group. R Ar2 each independently represents an aryl group. n represents an integer of 1 or more).

另外,於本發明中,所謂“聚矽氧烷”是表示具有鍵結有2個以上矽氧烷單元(Si-O)的分子骨架的化合物。 Further, in the present invention, the term "polyoxyalkylene oxide" means a compound having a molecular skeleton in which two or more siloxane oxide units (Si-O) are bonded.

聚矽氧烷(A) Polyoxane (A)

聚矽氧烷(A)是上述式(1)所表示的具有至少2個烯基的聚矽氧烷。聚矽氧烷(A)是本組成物的主成分,藉由與聚矽氧烷(B)的矽氫化反應而硬化,成為硬化物的主體。 The polyoxyalkylene (A) is a polyoxyalkylene having at least two alkenyl groups represented by the above formula (1). The polyoxyalkylene (A) is a main component of the present composition and is hardened by hydrogenation reaction with a polyhydrazine (B) to form a main body of the cured product.

式(1)中,R1、R2及R3分別獨立地表示烷基、烯基、 芳基或密接性基。亦即,關於附有符號a的1個矽氧烷單元(結構單元),3個所存在的R1分別獨立地可為烷基,亦可為烯基,亦可為芳基,亦可為密接性基。例如在3個R1中的2個以上R1為烷基的情況下,該烷基可為相同的烷基,亦可為不同的烷基。在符號a為2以上的整數的情況下,附有符號a的各矽氧烷單元可相同亦可不同。關於R2及R3,亦與R1同樣。 In the formula (1), R 1 , R 2 and R 3 each independently represent an alkyl group, an alkenyl group, an aryl group or an adhesive group. That is, with respect to one oxoxane unit (structural unit) having the symbol a, the three R 1 present may independently be an alkyl group, an alkenyl group, an aryl group, or a close contact. Sexual basis. For example, in the three R 1 in R 1 is two or more are alkyl groups, the alkyl group may be the same alkyl group, an alkyl group may also be different. In the case where the symbol a is an integer of 2 or more, each of the decane units attached with the symbol a may be the same or different. R 2 and R 3 are also the same as R 1 .

其中,附有符號a的矽氧烷單元中所存在的R1、附有符號c的矽氧烷單元中所存在的R2及附有符號d的矽氧烷單元中所存在的R3中的至少2個是烯基,在1分子上述式(1)所表示的聚矽氧烷(A)中存在至少2個的烯基。例如,可以是附有符號a的1個矽氧烷單元中所存在的3個R1中的1個為烯基,該矽氧烷單元存在2個以上。可以是附有符號a的1個矽氧烷單元中所存在的3個R1中的2個以上為烯基,該矽氧烷單元存在1個以上。可以是附有符號a的1個矽氧烷單元中所存在的3個R1中的1個為烯基,該矽氧烷單元存在1個,附有符號c的1個矽氧烷單元中所存在的2個R2中的1個為烯基,該矽氧烷單元存在1個以上。 Wherein R 1 present in the oxoxane unit attached with the symbol a, R 2 present in the oxoxane unit attached with the symbol c, and R 3 present in the fluorinated alkane unit having the symbol d At least two of them are alkenyl groups, and at least two alkenyl groups are present in one molecule of the polyoxyalkylene (A) represented by the above formula (1). For example, one of the three R 1 present in one oxoxane unit to which the symbol a is attached may be an alkenyl group, and two or more of the decane units may be present. Two or more of the three R 1 present in one oxoxane unit to which the symbol a is attached may be an alkenyl group, and one or more of the decane units may be present. One of the three R 1 's present in one oxoxane unit to which the symbol a is attached may be an alkenyl group, and one of the oxoxane units may be present in one oxoxane unit having the symbol c One of the two R 2 present is an alkenyl group, and one or more of the decane units are present.

而且,關於附有符號c的矽氧烷單元,鍵結於同一矽原子上的2個R2中的其中一個R2為芳基的情況下,另一個R2並非芳基。 Further, in the case of the oxime unit having the symbol c, in the case where one of R 2 of the two R 2 bonded to the same fluorene atom is an aryl group, the other R 2 is not an aryl group.

所述烷基可列舉甲基、乙基、丙基、丁基、戊基、己基、庚基、環丙基、環戊基、環己基、環庚基、環辛基、 冰片基、降冰片基、金剛烷基等。該些基中優選甲基。 The alkyl group may, for example, be methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, cyclopropyl, cyclopentyl, cyclohexyl, cycloheptyl or cyclooctyl. Borneol base, norbornyl base, adamantyl and the like. Among these groups, a methyl group is preferred.

所述烯基可列舉乙烯基、烯丙基、丙烯基、異丙烯基、丁烯基、異丁烯基、戊烯基、庚烯基、己烯基及環己烯基等。該些基中優選乙烯基、烯丙基及己烯基。 Examples of the alkenyl group include a vinyl group, an allyl group, a propenyl group, an isopropenyl group, a butenyl group, an isobutenyl group, a pentenyl group, a heptenyl group, a hexenyl group, and a cyclohexenyl group. Among these groups, a vinyl group, an allyl group, and a hexenyl group are preferable.

所述芳基可列舉苯基、甲苯基、二甲苯基、萘基等。該些基中優選苯基。 The aryl group may, for example, be a phenyl group, a tolyl group, a xylyl group or a naphthyl group. Phenyl groups are preferred among these groups.

所述密接性基是表示對成為半導體裝置等的基材等材料的金屬或有機樹脂等具有密接性的基。 The adhesion-bonding group is a group having adhesion to a metal or an organic resin which is a material such as a substrate of a semiconductor device or the like.

密接性基例如可列舉具有環氧基、亞硫醯基、異氰酸酯基、三烯丙基異氰酸酯基等的基。該些基中,自難以阻礙於使硬化性組成物硬化時所產生之矽氫化反應考慮,優選具有環氧基的基。 Examples of the adhesion group include a group having an epoxy group, a sulfinylene group, an isocyanate group, or a triallyl isocyanate group. Among these bases, a group having an epoxy group is preferred because it is difficult to prevent the hydrogenation reaction which occurs when the curable composition is cured.

所述具有環氧基的基例如可列舉縮水甘油氧基(glycidoxy),3-縮水甘油氧基丙基等縮水甘油氧基烷基,以及3,4-環氧環戊基、3,4-環氧環己基、2-(3,4-環氧環戊基)乙基、及2-(3,4-環氧環己基)乙基等環氧環烷基等。所述具有環氧基的基具體而言可列舉下述結構式(3)~結構式(6)所表示的基。若所述具有環氧基的基為此種基,則變得能夠以mm的級別進行硬化物的成形。 Examples of the group having an epoxy group include glycidoxy, glycidoxyalkyl groups such as 3-glycidoxypropyl group, and 3,4-epoxycyclopentyl group, 3,4-. An epoxycycloalkyl group such as epoxycyclohexyl group, 2-(3,4-epoxycyclopentyl)ethyl group or 2-(3,4-epoxycyclohexyl)ethyl group. Specific examples of the group having an epoxy group include the groups represented by the following structural formulae (3) to (6). When the group having an epoxy group is such a group, it becomes possible to form a cured product at a level of mm.

[結構式(3)中,R5表示亞甲基或2價的碳數為2~10的直鏈狀亞烷基或碳數為3~10的支鏈狀亞烷基] [In the structural formula (3), R 5 represents a methylene group or a divalent linear alkylene group having 2 to 10 carbon atoms or a branched alkylene group having 3 to 10 carbon atoms]

[結構式(4)中,R6表示亞甲基或2價的碳數為2~10的直鏈狀亞烷基或碳數為3~10的支鏈狀亞烷基] [In the structural formula (4), R 6 represents a methylene group or a divalent linear alkylene group having 2 to 10 carbon atoms or a branched alkylene group having 3 to 10 carbon atoms]

[結構式(5)中,R7表示亞甲基或2價的碳數為2~10的直鏈狀亞烷基或碳數為3~10的支鏈狀亞烷基] [In the structural formula (5), R 7 represents a methylene group or a divalent linear alkylene group having 2 to 10 carbon atoms or a branched alkylene group having 3 to 10 carbon atoms]

[結構式(6)中,R8表示亞甲基或2價的碳數為2~10的直鏈狀亞烷基或碳數為3~10的支鏈狀亞烷基] [In the structural formula (6), R 8 represents a methylene group or a divalent linear alkylene group having 2 to 10 carbon atoms or a branched alkylene group having 3 to 10 carbon atoms]

結構式(1)所表示的基具體而言可列舉2-(3,4-環氧基環己基)乙基等。 Specific examples of the group represented by the structural formula (1) include 2-(3,4-epoxycyclohexyl)ethyl and the like.

結構式(2)所表示的基具體而言可列舉縮水甘油基等。 Specific examples of the group represented by the structural formula (2) include a glycidyl group and the like.

結構式(3)所表示的基具體而言可列舉3-縮水甘油氧基丙基等。 Specific examples of the group represented by the structural formula (3) include 3-glycidoxypropyl group and the like.

結構式(4)所表示的基具體而言可列舉2-(4-甲基-3,4-環氧環己基)乙基等。 Specific examples of the group represented by the structural formula (4) include 2-(4-methyl-3,4-epoxycyclohexyl)ethyl and the like.

式(1)中,RAr1表示芳基。RAr1所表示的芳基與所述R1、R2及R3所表示的芳基相同。 In the formula (1), R Ar1 represents an aryl group. The aryl group represented by R Ar1 is the same as the aryl group represented by the above R 1 , R 2 and R 3 .

式(1)中,X表示氫原子或碳數為1~3的烷基。 In the formula (1), X represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.

式(1)中,a、c、e及f分別獨立地表示0以上的整數。b及d分別獨立地表示1以上的整數。 In the formula (1), a, c, e, and f each independently represent an integer of 0 or more. b and d each independently represent an integer of 1 or more.

聚矽氧烷(A)具有附有符號b的矽氧烷單元、亦即於構成聚矽氧烷鏈的同一矽原子上鍵結有2個芳基的矽氧烷單元,因此由本硬化性組成物所得的硬化物的耐濕性提高。 The polyoxyalkylene (A) has a siloxane unit attached with the symbol b, that is, a siloxane unit having two aryl groups bonded to the same fluorene atom constituting the polyoxyalkylene chain, and thus is composed of the present hardenability. The moisture resistance of the cured product obtained by the material is improved.

於將a、b、c、d、e及f的合計設為100%時,a的比例優選為0%~60%,更優選為10%~40%。b的比例優選為5%~50%,更優選為5%~40%。c的比例優選為0%~40%,更優選為0%~30%。d的比例優選為30%~90%,更優選為40%~80%。e的比例優選為0%~40%,更優選為0%~20%。f的比例優選為0%~50%,更優選為0.1%~20%。 When the total of a, b, c, d, e, and f is 100%, the ratio of a is preferably 0% to 60%, and more preferably 10% to 40%. The proportion of b is preferably 5% to 50%, more preferably 5% to 40%. The proportion of c is preferably from 0% to 40%, more preferably from 0% to 30%. The ratio of d is preferably from 30% to 90%, more preferably from 40% to 80%. The ratio of e is preferably from 0% to 40%, more preferably from 0% to 20%. The ratio of f is preferably from 0% to 50%, more preferably from 0.1% to 20%.

聚矽氧烷(A)的利用凝膠滲透色譜法而測定的聚苯 乙烯換算的重量平均分子量優選為100~50000的範圍,更優選為500~10000的範圍。若聚矽氧烷(A)的重量平均分子量為所述範圍內,則使用本組成物而製造密封材時容易操作,而且由本組成物所得的硬化物作為光學半導體密封材而具有充分的強度。 Polyphenylene oxide (A) as determined by gel permeation chromatography The weight average molecular weight in terms of ethylene is preferably in the range of 100 to 50,000, and more preferably in the range of 500 to 10,000. When the weight average molecular weight of the polyoxyalkylene (A) is within the above range, it is easy to handle when the sealing material is produced using the composition, and the cured product obtained from the composition has sufficient strength as an optical semiconductor sealing material.

聚矽氧烷(A)的製造方法可列舉:日本專利特開平6-9659號公報、日本專利特開2003-183582號公報、日本專利特開2007-008996號公報、日本專利特開2007-106798號公報、日本專利特開2007-169427號公報及日本專利特開2010-059359號公報等中所記載的公知的方法,例如對成為各單元源的氯矽烷或烷氧基矽烷進行共水解的方法或者利用鹼金屬催化劑等對共水解物進行平衡化反應的方法等。 The manufacturing method of the polyoxyalkylene (A) is exemplified by Japanese Patent Laid-Open No. Hei 6-9659, Japanese Patent Laid-Open No. 2003-183582, Japanese Patent Laid-Open No. Hei. No. 2007-008996, and Japanese Patent Laid-Open No. 2007-106798 A known method described in, for example, Japanese Laid-Open Patent Publication No. 2007-169427, and the like, for example, a method of co-hydrolyzing a chlorodecane or an alkoxy decane which is a source of each unit Alternatively, a method of performing a balanced reaction on a co-hydrolyzate by an alkali metal catalyst or the like.

聚硅氧烷(B) Polysiloxane (B)

聚硅氧烷(B)是上述式(2)所表示的聚硅氧烷。聚矽氧烷(B)是相對於聚矽氧烷(A)的交聯劑,藉由與聚矽氧烷(A)的矽氫化反應而形成硬化物。 The polysiloxane (B) is a polysiloxane represented by the above formula (2). The polyoxyalkylene (B) is a crosslinking agent with respect to the polyoxyalkylene (A), and is formed by a hydrogenation reaction with a polyhydrazine (A).

式(2)中,RAr2表示芳基。所述芳基可列舉苯基、甲苯基、二甲苯基、萘基等。該些基中優選苯基。 In the formula (2), R Ar2 represents an aryl group. The aryl group may, for example, be a phenyl group, a tolyl group, a xylyl group or a naphthyl group. Phenyl groups are preferred among these groups.

式(2)中,R4分別獨立地表示1價烴基。所述1價烴基可列舉甲基、乙基、丙基、丁基、戊基、己基、庚基等烷基;苯基、甲苯基、二甲苯基、萘基等芳基;苄基、苯乙基等芳烷基;氯甲基、3-氯丙基、3,3,3-三氟丙基、九氟丁基乙基等經取代的烷基等。 In the formula (2), R 4 each independently represents a monovalent hydrocarbon group. The monovalent hydrocarbon group may, for example, be an alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group or a heptyl group; an aryl group such as a phenyl group, a tolyl group, a xylyl group or a naphthyl group; An aralkyl group such as ethyl; a substituted alkyl group such as chloromethyl, 3-chloropropyl, 3,3,3-trifluoropropyl or nonafluorobutylethyl.

式(2)中,n表示1以上的整數。n優選為2以上的整數,更優選為2~5的整數,更優選為2。若n為上述範圍內,則可獲得於耐濕性的方面而言優異的硬化物。 In the formula (2), n represents an integer of 1 or more. n is preferably an integer of 2 or more, more preferably an integer of 2 to 5, and still more preferably 2. When n is in the above range, a cured product excellent in moisture resistance can be obtained.

聚矽氧烷(B)具有1個以上於構成聚矽氧烷鏈的同一矽原子上鍵結有2個芳基的矽氧烷單元,因此由本硬化性組成物所得的硬化物的耐濕性提高。亦即,本硬化性組成物藉由將聚矽氧烷(A)(所述聚矽氧烷(A)具有於構成聚矽氧烷鏈的同一矽原子上鍵結有2個芳基的矽氧烷單元)、聚矽氧烷(B)(所述聚矽氧烷(B)具有1個以上於構成聚矽氧烷鏈的同一矽原子上鍵結有2個芳基的矽氧烷單元)組合使用而使硬化物的耐濕性提高。 Since the polyoxyalkylene (B) has one or more siloxane units in which two aryl groups are bonded to the same fluorene atom constituting the polyoxyalkylene chain, the moisture resistance of the cured product obtained from the sclerosing composition is high. improve. That is, the present sclerosing composition is obtained by a polysiloxane (A) having the aryl group bonded to the same fluorene atom constituting the polyoxyalkylene chain. An oxane unit), a polyoxyalkylene (B) having at least one siloxane group bonded to two aryl groups on the same fluorene atom constituting the polyoxyalkylene chain Used in combination to improve the moisture resistance of the cured product.

聚矽氧烷(B)例如可利用公知的方法使二苯基二甲氧基矽烷等二苯基二烷氧基矽烷與1,1,3,3-四甲基二矽氧烷等二氫矽氧烷反應而獲得。 The polyoxyalkylene (B) can be, for example, dihydrodialkyloxydecane such as diphenyldimethoxydecane and dihydrogen such as 1,1,3,3-tetramethyldioxane by a known method. Obtained by the reaction of a decane.

作為本發明的硬化性組成物中的聚矽氧烷(B)的含量,相對於聚矽氧烷(A)100質量份而言優選為10質量份~100質量份,更優選為10質量份~80質量份。若聚矽氧烷(B)的含量為所述範圍內,則組成物的硬化充分進行,而且所得的硬化物獲得充分的耐濕性。 The content of the polyoxyalkylene (B) in the curable composition of the present invention is preferably 10 parts by mass to 100 parts by mass, more preferably 10 parts by mass, per 100 parts by mass of the polysiloxane (A). ~80 parts by mass. When the content of the polyoxyalkylene (B) is within the above range, the hardening of the composition proceeds sufficiently, and the obtained cured product obtains sufficient moisture resistance.

矽氫化反應用催化劑(C) Rhodium catalyst for hydrogenation (C)

矽氫化反應用催化劑(C)是聚矽氧烷(A)與聚矽氧烷(B)的矽氫化反應的催化劑。 The catalyst for hydrogenation of hydrazine (C) is a catalyst for the hydrogenation of hydrazine of polysiloxane (A) with polyoxyalkylene (B).

矽氫化反應用催化劑(C)若為在先前的矽氫化反應硬化型矽酮類樹脂組成物中作為矽氫化反應用催化劑而使 用的催化劑,則可並無特別限制地使用。 The catalyst for hydrogenation reaction (C) is used as a catalyst for hydrogenation reaction in the composition of the previous hydrogenation-reacting type anthrone-based resin. The catalyst to be used can be used without particular limitation.

矽氫化反應用催化劑(C)的具體例可列舉鉑類催化劑、銠類催化劑、鈀類催化劑。自本組成物的硬化促進的觀點考慮,該些催化劑中優選鉑類催化劑。鉑類催化劑例如可列舉鉑-烯基矽氧烷絡合物等。烯基矽氧烷可列舉1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷等。特別是自絡合物的穩定性的觀點考慮,優選1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷。 Specific examples of the catalyst (C) for the hydrogenation reaction include a platinum catalyst, a rhodium catalyst, and a palladium catalyst. From the viewpoint of the hardening promotion of the present composition, a platinum-based catalyst is preferred among the catalysts. Examples of the platinum-based catalyst include a platinum-alkenyloxyalkylene complex and the like. Examples of the alkenyl alkane include 1,3-divinyl-1,1,3,3-tetramethyldioxane, 1,3,5,7-tetramethyl-1,3,5,7. - tetravinylcyclotetraoxane, and the like. In particular, from the viewpoint of stability of the complex, 1,3-divinyl-1,1,3,3-tetramethyldioxane is preferred.

本發明的硬化性組成物中的矽氫化反應用催化劑(C)使用聚矽氧烷(A)與聚矽氧烷(B)的矽氫化反應實際進行的量、例如於硬化性組成物中為0.01 ppm~10000 ppm。 The catalyst for the hydrogenation reaction of the hydrazine in the curable composition of the present invention (C) is an amount actually used in the hydrogenation reaction of polyfluorene oxide (A) with polysiloxane (B), for example, in the curable composition. 0.01 ppm~10000 ppm.

本發明的硬化性組成物只要可達成本發明的目的,則除了所述成分以外,亦可視需要而含有例如氣相二氧化矽、石英粉末、氧化鈦、氧化鋁、氧化鋅、螢光體等粒子,乙炔基環己醇、環-四甲基四乙烯基四矽氧烷等反應阻滯劑,二苯基雙(二甲基乙烯基矽烷氧基)矽烷、苯基三(二甲基乙烯基矽烷氧基)矽烷、二苯基雙(二甲基羥基矽烷氧基)矽烷等稀釋劑,顏料,阻燃劑,耐熱劑,抗氧化劑等。 The curable composition of the present invention may contain, for example, gas phase cerium oxide, quartz powder, titanium oxide, aluminum oxide, zinc oxide, phosphor, etc., as long as it can achieve the object of the invention. a reaction retarder such as ethynylcyclohexanol or cyclo-tetramethyltetravinyltetraoxane, diphenylbis(dimethylvinyldecyloxy)decane, phenyltris(dimethylethene) Diluents such as decyloxy)decane, diphenylbis(dimethylhydroxydecyloxy)decane, pigments, flame retardants, heat-resistant agents, antioxidants, and the like.

本發明的硬化性組成物可藉由利用混合機等公知的方法將所述各成分均一混合而調製。 The curable composition of the present invention can be prepared by uniformly mixing the above components by a known method such as a mixer.

本發明的硬化性組成物的25℃下的黏度優選為1 mPa.s~1000000 mPa.s,更優選為10 mPa.s~10000 mPa.s。若黏度為該範圍內,則本組成物的操作性提高。 The viscosity of the curable composition of the present invention at 25 ° C is preferably 1 mPa. s~1000000 mPa. s, more preferably 10 mPa. s~10000 mPa. s. When the viscosity is within this range, the workability of the composition is improved.

本發明的硬化性組成物可調製為1液,亦可分為2液 而調製,於使用時將2液混合而使用。亦可視需要添加少量乙炔基環己醇等乙炔醇等硬化抑制劑。 The curable composition of the present invention can be prepared into one liquid, and can also be divided into two liquids. The preparation was carried out by mixing two liquids at the time of use. A small amount of a hardening inhibitor such as acetylene alcohol such as ethynylcyclohexanol may be added as needed.

<硬化物> <hardened matter>

藉由對本發明的硬化性組成物進行硬化而獲得硬化物。 The cured product is obtained by curing the curable composition of the present invention.

對本發明的硬化性組成物進行硬化的方法例如可列舉將硬化性組成物塗布於基板上後,於100℃~180℃下加熱1小時~13小時的方法。 The method of hardening the curable composition of the present invention is, for example, a method in which a curable composition is applied onto a substrate and then heated at 100 ° C to 180 ° C for 1 hour to 13 hours.

<光學半導體裝置> <Optical semiconductor device>

本發明的光學半導體裝置包含:半導體發光元件、對該半導體發光元件進行被覆的所述硬化物。本發明的光學半導體裝置藉由於半導體發光元件上被覆所述硬化性組成物,對該組成物進行硬化而獲得。對硬化性組成物進行硬化的方法如上所述。 An optical semiconductor device according to the present invention includes a semiconductor light emitting element and the cured product that covers the semiconductor light emitting element. The optical semiconductor device of the present invention is obtained by coating the curable composition on the semiconductor light-emitting device and curing the composition. The method of hardening the hardenable composition is as described above.

光學半導體裝置可列舉發光二極體(Light Emitting Diode,LED)及雷射二極體(Laser Diode,LD)等。 Examples of the optical semiconductor device include a light emitting diode (LED), a laser diode (LD), and the like.

圖1是本發明的光學半導體裝置的一具體例的模式圖。光學半導體裝置1包含:電極6;半導體發光元件2,設置於電極6上,藉由導線7而與電極6電性連接;反射器3,以收容半導體發光元件2的方式而配置;密封材4,填充於反射器3內,對半導體發光元件2進行密封。密封材4是藉由對本發明的硬化性組成物進行硬化而獲得。於密封材4中分散有二氧化矽或螢光體等粒子5。 Fig. 1 is a schematic view showing a specific example of an optical semiconductor device of the present invention. The optical semiconductor device 1 includes an electrode 6; the semiconductor light-emitting device 2 is disposed on the electrode 6, and is electrically connected to the electrode 6 via a wire 7; the reflector 3 is disposed to house the semiconductor light-emitting device 2; and the sealing member 4 The semiconductor light-emitting element 2 is sealed by being filled in the reflector 3. The sealing material 4 is obtained by hardening the curable composition of the present invention. Particles 5 such as cerium oxide or a phosphor are dispersed in the sealing material 4.

如上所述,對本發明的硬化性組成物進行硬化而得的 密封材(硬化物)由於耐濕性高,因此即使長時間使用本發明的光學半導體裝置,水蒸氣透過密封材而使發光元件的發光特性降低的可能亦小。 As described above, the curable composition of the present invention is cured. Since the sealing material (cured material) has high moisture resistance, even if the optical semiconductor device of the present invention is used for a long period of time, water vapor permeates through the sealing material to lower the light-emitting characteristics of the light-emitting element.

[實例] [Example] (1)聚矽氧烷的合成 (1) Synthesis of polyoxyalkylene oxide

聚矽氧烷的結構由29Si NMR及13C NMR而決定。 The structure of the polyoxyalkylene was determined by 29 Si NMR and 13 C NMR.

聚矽氧烷的重量平均分子量(Mw)是利用凝膠滲透色譜法(GPC)而於下述條件下測定,求出為聚苯乙烯換算值。 The weight average molecular weight (Mw) of the polyoxyalkylene was measured by gel permeation chromatography (GPC) under the following conditions, and was determined to be a value in terms of polystyrene.

裝置:HLC-8120C(東曹公司製造) Device: HLC-8120C (manufactured by Tosoh Corporation)

管柱:TSK-gel MultiporeHXL-M(東曹公司製造) Column: TSK-gel MultiporeHXL-M (made by Tosoh Corporation)

洗脫液:THF、流量為0.5 mL/min、負載量5.0%、100 μL Eluent: THF, flow rate 0.5 mL/min, loading 5.0%, 100 μL

[合成例1]聚硅氧烷(A-1)的合成 [Synthesis Example 1] Synthesis of Polysiloxane (A-1)

於附有攪拌機、回流冷凝管、投入口、溫度計的四口燒瓶中投入1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷37.3 g、苯基三甲氧基矽烷234 g、二苯基二甲氧基矽烷97.7 g、水55 g、三氟甲磺酸0.3 g及甲苯146 g而加以混合,於66℃下進行1小時的加熱回流。冷卻至室溫後,將下層分離除去,對上層的甲苯溶液層進行水洗。於水洗的甲苯溶液層中加入水30 g與氫氧化鉀0.3 g與3-縮水甘油氧基丙基甲基二甲氧基矽烷4.4 g而於70℃下進行1小時的加熱。繼而,將甲醇蒸餾除去,藉由共沸脫水將過剩的水除去。繼而,於111℃下進行4小時的加熱回流。反應後的甲苯 溶液冷卻至室溫後,用乙酸0.3 g加以中和而進行水洗。將水除去後,於減壓下將甲苯蒸餾除去而濃縮,獲得平均單元式(ViMe2SiO1/2)20(PhSiO3/2)59(Ph2SiO2/2)20(EpMeSiO2/2)1(Vi表示乙烯基,Me表示甲基,Ph表示苯基,Ep表示縮水甘油氧基丙基)所表示的聚矽氧烷(A-1)。聚矽氧烷(A-1)的重量平均分子量為1600。 1,3-divinyl-1,1,3,3-tetramethyldioxane 37.3 g, phenyltrimethoxy group was placed in a four-necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer. 234 g of decane, 97.7 g of diphenyldimethoxydecane, 55 g of water, 0.3 g of trifluoromethanesulfonic acid and 146 g of toluene were mixed, and heated under reflux at 66 ° C for 1 hour. After cooling to room temperature, the lower layer was separated and removed, and the upper layer of the toluene solution was washed with water. 30 g of water, 0.3 g of potassium hydroxide and 4.4 g of 3-glycidoxypropylmethyldimethoxydecane were added to the water-washed toluene solution layer, and heating was carried out at 70 ° C for 1 hour. Then, methanol was distilled off, and excess water was removed by azeotropic dehydration. Then, heating and refluxing was carried out at 111 ° C for 4 hours. The toluene solution after the reaction was cooled to room temperature, and then neutralized with 0.3 g of acetic acid to wash with water. After removing water, the toluene was distilled off under reduced pressure and concentrated to obtain an average unit formula (ViMe 2 SiO 1/2 ) 20 (PhSiO 3/2 ) 59 (Ph 2 SiO 2/2 ) 20 (EpMeSiO 2/2 1 (Vi represents a vinyl group, Me represents a methyl group, Ph represents a phenyl group, and Ep represents a glycidoxypropyl group) represented by polyoxyalkylene oxide (A-1). The polyoxyalkylene (A-1) had a weight average molecular weight of 1,600.

[合成例2]聚矽氧烷(A-2)的合成 [Synthesis Example 2] Synthesis of polyoxyalkylene (A-2)

於附有攪拌機、回流冷凝管、投入口、溫度計的四口燒瓶中投入1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷37.3 g、苯基三甲氧基矽烷234 g、二甲基二甲氧基矽烷24 g、二苯基二甲氧基矽烷48.9 g、水56 g、三氟甲磺酸0.3 g及甲苯133 g而加以混合,於66℃下進行1小時的加熱回流。冷卻至室溫後,將下層分離除去,對上層的甲苯溶液層進行水洗。將水除去後,於減壓下將甲苯蒸餾除去而濃縮,獲得平均單元式為(ViMe2SiO1/2)20(PhSiO3/2)60(Me2SiO2/2)10(Ph2SiO2/2)10(Vi表示乙烯基,Me表示甲基,Ph表示苯基)所表示的聚矽氧烷(A-2)。聚矽氧烷(A-2)的重量平均分子量為1600。 1,3-divinyl-1,1,3,3-tetramethyldioxane 37.3 g, phenyltrimethoxy group was placed in a four-necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer. 234 g of decane, 24 g of dimethyldimethoxydecane, 48.9 g of diphenyldimethoxydecane, 56 g of water, 0.3 g of trifluoromethanesulfonic acid and 133 g of toluene were mixed at 66 ° C. Heated back for 1 hour. After cooling to room temperature, the lower layer was separated and removed, and the upper layer of the toluene solution was washed with water. After removing water, the toluene was distilled off under reduced pressure and concentrated to obtain an average unit formula of (ViMe 2 SiO 1/2 ) 20 (PhSiO 3/2 ) 60 (Me 2 SiO 2/2 ) 10 (Ph 2 SiO). 2/2 ) 10 (Vi represents a vinyl group, Me represents a methyl group, and Ph represents a phenyl group) represented by polyoxyalkylene oxide (A-2). The polyoxyalkylene (A-2) had a weight average molecular weight of 1,600.

[合成例3]聚矽氧烷(RA-1)的合成 [Synthesis Example 3] Synthesis of Polyoxane (RA-1)

於附有攪拌機、回流冷凝管、投入口、溫度計的四口燒瓶中投入1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷37.3 g、苯基三甲氧基矽烷234 g、二甲基二甲氧基矽烷48.1 g、水56 g、三氟甲磺酸0.3 g及甲苯120 g而加以混合,於66℃下進行1小時的加熱回流。冷卻至室溫後,將下層分離 除去,對上層的甲苯溶液層進行水洗。於水洗的甲苯溶液層中加入水30 g與氫氧化鉀0.3 g與3-縮水甘油氧基丙基甲基二甲氧基矽烷4.4 g而於70℃下進行1小時的加熱回流。繼而,將甲醇蒸餾除去,藉由共沸脫水將過剩的水除去。繼而,於111℃下進行4小時的加熱回流。反應後的甲苯溶液冷卻至室溫後,用乙酸0.3 g加以中和而進行水洗。將水除去後,於減壓下將甲苯蒸餾除去而濃縮,獲得平均單元式(ViMe2SiO1/2)20(PhSiO3/2)59(Me2SiO2/2)20(EpMeSiO2/2)1(Vi表示乙烯基,Me表示甲基,Ph表示苯基,Ep表示縮水甘油氧基丙基)所表示的聚矽氧烷(RA-1)。聚矽氧烷(RA-1)的重量平均分子量為1800。 1,3-divinyl-1,1,3,3-tetramethyldioxane 37.3 g, phenyltrimethoxy group was placed in a four-necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer. 234 g of decane, 48.1 g of dimethyldimethoxydecane, 56 g of water, 0.3 g of trifluoromethanesulfonic acid and 120 g of toluene were mixed and heated under reflux at 66 ° C for 1 hour. After cooling to room temperature, the lower layer was separated and removed, and the upper layer of the toluene solution was washed with water. 30 g of water, 0.3 g of potassium hydroxide and 4.4 g of 3-glycidoxypropylmethyldimethoxydecane were added to the water-washed toluene solution layer, and the mixture was heated under reflux at 70 ° C for 1 hour. Then, methanol was distilled off, and excess water was removed by azeotropic dehydration. Then, heating and refluxing was carried out at 111 ° C for 4 hours. The toluene solution after the reaction was cooled to room temperature, and then neutralized with 0.3 g of acetic acid to wash with water. After removing the water, the toluene was distilled off under reduced pressure and concentrated to obtain an average unit formula (ViMe 2 SiO 1/2 ) 20 (PhSiO 3/2 ) 59 (Me 2 SiO 2/2 ) 20 (EpMeSiO 2/2 1 (Vi represents a vinyl group, Me represents a methyl group, Ph represents a phenyl group, and Ep represents a glycidoxypropyl group) represented by a polyoxyalkylene oxide (RA-1). The polyoxyalkylene (RA-1) has a weight average molecular weight of 1800.

[合成例4]聚矽氧烷(B-1)的合成 [Synthesis Example 4] Synthesis of polyoxyalkylene (B-1)

於附有攪拌機、回流冷凝管、投入口、溫度計的四口燒瓶中投入二苯基二甲氧基矽烷220 g與三氟甲磺酸0.6 g而加以混合,加入1,1,3,3-四甲基二矽氧烷60.5 g,一面於室溫下進行攪拌一面以30分鐘滴加乙酸108 g。於滴加結束後,一面對混合液進行攪拌一面升溫至50℃而進行3小時的反應。其次升溫至80℃而使其反應2小時。反應結束後冷卻至室溫,然後加入甲苯與水,充分混合後進行靜置,將水層分離除去。對上層的甲苯溶液層進行3次水洗後,進行減壓濃縮而獲得下述式(7)所表示的聚矽氧烷(B-1)。 Into a four-necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer, 220 g of diphenyldimethoxydecane and 0.6 g of trifluoromethanesulfonic acid were added and mixed, and 1,1,3,3- was added. 60.5 g of tetramethyldioxane was added dropwise to 108 g of acetic acid over 30 minutes while stirring at room temperature. After completion of the dropwise addition, the mixture was heated to 50 ° C while stirring the mixture, and the reaction was carried out for 3 hours. Next, the temperature was raised to 80 ° C and allowed to react for 2 hours. After completion of the reaction, the mixture was cooled to room temperature, and then toluene and water were added thereto, and the mixture was thoroughly mixed, and then allowed to stand, and the aqueous layer was separated and removed. The toluene solution layer of the upper layer was washed with water three times, and then concentrated under reduced pressure to obtain a polyoxane (B-1) represented by the following formula (7).

[化7] [Chemistry 7]

[合成例5]聚硅氧烷(B-2)的合成 [Synthesis Example 5] Synthesis of polysiloxane (B-2)

於附有攪拌機、回流冷凝管、投入口、溫度計的四口燒瓶中投入二苯基二甲氧基矽烷220 g與三氟甲磺酸0.6 g而加以混合,加入1,1,3,3-四甲基二矽氧烷147 g,一面於室溫下攪拌一面以30分鐘滴加乙酸108 g。於滴加結束後,一面對混合液進行攪拌一面升溫至50℃而進行3小時的反應。冷卻至室溫後,加入甲苯與水,充分混合後進行靜置,將水層分離除去。對上層的甲苯溶液層進行3次水洗後,進行減壓濃縮而獲得下述式(8)所表示的聚矽氧烷(B-2)。 Into a four-necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer, 220 g of diphenyldimethoxydecane and 0.6 g of trifluoromethanesulfonic acid were added and mixed, and 1,1,3,3- was added. 147 g of tetramethyldioxane was added dropwise to 108 g of acetic acid over 30 minutes while stirring at room temperature. After completion of the dropwise addition, the mixture was heated to 50 ° C while stirring the mixture, and the reaction was carried out for 3 hours. After cooling to room temperature, toluene and water were added, and the mixture was thoroughly mixed, and then allowed to stand, and the aqueous layer was separated and removed. The toluene solution layer of the upper layer was washed with water three times, and then concentrated under reduced pressure to obtain a polyoxane (B-2) represented by the following formula (8).

[化8] [化8]

(2)硬化性組成物的調製 (2) Modulation of hardenable composition [實例1~實例4及比較例1] [Example 1 to Example 4 and Comparative Example 1]

於常壓下、25℃下將下述表1所示的成分,以表1中所示的調配量加以混合,獲得實例1~實例4及比較例1的硬化性組成物。另外,表1中的各成分的詳細如下所述。 The components shown in the following Table 1 were mixed under normal pressure at 25 ° C in the amounts shown in Table 1, and the curable compositions of Examples 1 to 4 and Comparative Example 1 were obtained. In addition, the details of each component in Table 1 are as follows.

C-1:鉑與1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷的絡 合物(鉑金屬量為4質量%) C-1: a network of platinum and 1,3-divinyl-1,1,3,3-tetramethyldioxane Compound (the amount of platinum metal is 4% by mass)

D-1:二苯基雙(二甲基乙烯基矽烷氧基)矽烷 D-1: diphenyl bis(dimethylvinyl nonyloxy) decane

D-2:苯基三(二甲基乙烯基矽烷氧基)矽烷 D-2: phenyl tris(dimethylvinyl nonyloxy) decane

E-1:乙炔基環己醇 E-1: ethynylcyclohexanol

(3)硬化性組成物的評價 (3) Evaluation of hardenable composition

關於實例1~實例4及比較例1的硬化性組成物,利用下述(3-1)~(3-5)的方法進行評價。將評價結果示於所述表1中。 The curable compositions of Examples 1 to 4 and Comparative Example 1 were evaluated by the following methods (3-1) to (3-5). The evaluation results are shown in Table 1.

(3-1)黏度 (3-1) Viscosity

硬化性組成物的黏度是使用E型黏度計而於25℃下測定。 The viscosity of the curable composition was measured at 25 ° C using an E-type viscometer.

(3-2)耐濕性(水蒸氣透過率) (3-2) Moisture resistance (water vapor transmission rate)

於鐵氟龍的平板上固定1 mm厚的框,以成為框的高度的方式塗布硬化性組成物,於150℃的熱風循環式烘箱中進行5小時的加熱,由此而製作縱50 mm、橫50 mm、高0.3 mm的硬化物。使用莫康(MOCON)公司製造的PREMATRAN-W3/31裝置,於40℃下、100%RH的條件下測定水蒸氣透過率。 A frame having a thickness of 1 mm was fixed on a flat plate of Teflon, and a curable composition was applied so as to be the height of the frame, and heated in a hot air circulating oven at 150 ° C for 5 hours, thereby producing a vertical length of 50 mm. Hardened material with a width of 50 mm and a height of 0.3 mm. The water vapor transmission rate was measured at 40 ° C under conditions of 100% RH using a PREMATRAN-W3/31 apparatus manufactured by MOCON.

(3-3)抗裂性 (3-3) Crack resistance

將硬化性組成物注入至LED封裝體(表面安裝型、俯視型、聚鄰苯二甲醯胺(PPA)樹脂制)中,於100℃下進行1小時的乾燥而使其硬化,其次於150℃下進行5小時的乾燥而使其硬化,由此製造10個包含硬化物(密封材)的半導體發光元件。將所得的各半導體發光元件於恒溫恒 濕槽(愛斯佩克株式會社(ESPEC Corp.)製造、PL-3KP)中,於85℃、85%RH的條件下進行5小時的保管後,使用桌上型回流焊裝置(千住金屬工業公司製造、STR-2010),進行2次最高溫度為260℃、10秒的回流步驟。對於10個半導體發光元件,用光學顯微鏡觀察回流處理後的硬化物與封裝樹脂之間的剝離的有無。 The curable composition was injected into an LED package (surface mount type, top view type, and polyphthalamide (PPA) resin), and dried at 100 ° C for 1 hour to be hardened, followed by 150. After drying at ° C for 5 hours and hardening, 10 semiconductor light-emitting elements including a cured product (sealing material) were produced. The obtained semiconductor light-emitting elements are kept at a constant temperature In a wet tank (manufactured by ESPEC Corp., PL-3KP), it is stored at 85 ° C and 85% RH for 5 hours, and then a tabletop reflow soldering device is used. The company manufactures, STR-2010), and performs two reflow steps with a maximum temperature of 260 ° C and 10 seconds. For each of the ten semiconductor light-emitting elements, the presence or absence of peeling between the cured product after the reflow treatment and the encapsulating resin was observed with an optical microscope.

將10個半導體發光元件中沒有1個產生剝離的情況作為“A”(判斷為良好),將產生剝離的半導體發光元件為1個~2個的情況作為“B”(判斷為稍好),將產生剝離的半導體發光元件為3個以上的情況作為“C”(判斷為不良)。 When none of the ten semiconductor light-emitting elements were peeled off, it was "A" (determined to be good), and the case where one or two semiconductor light-emitting elements which were peeled off was "B" (determined to be slightly better), In the case where three or more semiconductor light-emitting elements that have been peeled off are "C" (determined as defective).

(3-4)折射率 (3-4) Refractive index

使用下述硬度測定用途中所製作的硬化物,用麥特裏肯(Metricon)公司製造的Model2010全反射式折射率計測定25℃下的折射率。另外,測定波長為408 nm。 The cured product produced in the following hardness measurement application was measured for refractive index at 25 ° C using a Model 2010 total reflection refractometer manufactured by Metricon. In addition, the measurement wavelength was 408 nm.

(3-5)硬度 (3-5) Hardness

於鐵氟龍的平板上固定2 mm厚的框,以成為框的高度的方式塗布硬化性組成物,於150℃的熱風循環式烘箱中進行5小時的加熱,由此製作縱50 mm、橫50 mm、高1 mm的硬化物。利用JIS K6253中所規定的D型與A型硬度計而測定該硬化物的硬度。 A 2 mm-thick frame was fixed to the Teflon plate, and the curable composition was applied in such a manner as to be the height of the frame, and heated in a hot air circulating oven at 150 ° C for 5 hours to prepare a vertical 50 mm. Hardened material of 50 mm height and 1 mm height. The hardness of the cured product was measured using a D-type and a-type hardness tester prescribed in JIS K6253.

1‧‧‧光學半導體裝置 1‧‧‧Optical semiconductor device

2‧‧‧半導體發光元件 2‧‧‧Semiconductor light-emitting elements

3‧‧‧反射器 3‧‧‧ reflector

4‧‧‧密封材 4‧‧‧ Sealing material

5‧‧‧粒子 5‧‧‧ particles

6‧‧‧電極 6‧‧‧Electrode

7‧‧‧導線 7‧‧‧Wire

圖1是表示光學半導體裝置的一具體例的模式圖。 FIG. 1 is a schematic view showing a specific example of an optical semiconductor device.

1‧‧‧光學半導體裝置 1‧‧‧Optical semiconductor device

2‧‧‧半導體發光元件 2‧‧‧Semiconductor light-emitting elements

3‧‧‧反射器 3‧‧‧ reflector

4‧‧‧密封材 4‧‧‧ Sealing material

5‧‧‧粒子 5‧‧‧ particles

6‧‧‧電極 6‧‧‧Electrode

7‧‧‧導線 7‧‧‧Wire

Claims (5)

一種硬化性組成物,其含有:下述式(1)所表示的具有至少2個烯基的聚矽氧烷(A)、下述式(2)所表示的聚矽氧烷(B)、以及矽氫化反應用催化劑(C),[化1](R1 3SiO1/2)a(RAr1 2SiO2/2)b(R2 2SiO2/2)c(R3SiO3/2)d(SiO4/2)e(XO1/2)f (1)(式中,R1、R2及R3分別獨立地表示烷基、烯基、芳基或密接性基;其中,於同一矽原子上鍵結的2個R2中的其中一個R2是芳基時,另一個R2並非芳基;而且,所有的R1、R2及R3中的至少2個是烯基;RAr1表示芳基;X表示氫原子或碳數為1~3的烷基;a、c、e及f分別獨立地表示0以上的整數;b及d分別獨立地表示1以上的整數) (式中,R4分別獨立地表示1價烴基;RAr2分別獨立表示芳基;n表示1以上的整數)。 A curable composition comprising: a polyoxyalkylene (A) having at least two alkenyl groups represented by the following formula (1); and a polyoxyalkylene (B) represented by the following formula (2); And a catalyst for hydrogenation reaction (C), [Chem. 1] (R 1 3 SiO 1/2 ) a (R Ar1 2 SiO 2/2 ) b (R 2 2 SiO 2/2 ) c (R 3 SiO 3 / 2 ) d (SiO 4/2 ) e (XO 1/2 ) f (1) (wherein R 1 , R 2 and R 3 each independently represent an alkyl group, an alkenyl group, an aryl group or a bonding group; , on the same silicon atom bonded to a 2 R 2 wherein R 2 is aryl, the other R 2 is not an aryl group; and, all of the R. 1, at least R 2 and R 3 is 2 Alkenyl; R Ar1 represents an aryl group; X represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms; a, c, e and f each independently represent an integer of 0 or more; and b and d each independently represent 1 or more. Integer) (wherein R 4 each independently represents a monovalent hydrocarbon group; R Ar2 each independently represents an aryl group; and n represents an integer of 1 or more). 如申請專利範圍第1項所述的硬化性組成物,所述 聚矽氧烷(B)是於所述通式(2)中n≧2的化合物。 The sclerosing composition according to claim 1, wherein The polyoxyalkylene (B) is a compound of n≧2 in the above formula (2). 如申請專利範圍第1項或第2項所述的硬化性組成物,所述聚矽氧烷(B)的含量是相對於所述聚矽氧烷(A)100質量份而言為10質量份~100質量份。 The curable composition according to claim 1 or 2, wherein the content of the polyoxyalkylene (B) is 10% by mass based on 100 parts by mass of the polyoxyalkylene (A). Parts ~ 100 parts by mass. 一種硬化物,其是藉由對如申請專利範圍第1項至第3項中任一項所述的硬化性組成物進行硬化而得。 A cured product obtained by hardening a curable composition according to any one of claims 1 to 3. 一種光學半導體裝置,其包含:半導體發光元件、與被覆該半導體發光元件的如申請專利範圍第4項所述的硬化物。 An optical semiconductor device comprising: a semiconductor light emitting element; and a cured product according to item 4 of the patent application of the semiconductor light emitting element.
TW101144154A 2011-12-05 2012-11-26 Curable composition, cured object and optical semiconductor device TW201323524A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011266034 2011-12-05
JP2012184134A JP2013139547A (en) 2011-12-05 2012-08-23 Curable composition, cured product, and optical semiconductor device

Publications (1)

Publication Number Publication Date
TW201323524A true TW201323524A (en) 2013-06-16

Family

ID=48491664

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101144154A TW201323524A (en) 2011-12-05 2012-11-26 Curable composition, cured object and optical semiconductor device

Country Status (3)

Country Link
KR (1) KR20130062869A (en)
CN (1) CN103131188A (en)
TW (1) TW201323524A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10100156B2 (en) * 2014-03-12 2018-10-16 The Yokohama Rubber Co., Ltd. Curable resin composition
TWI802631B (en) * 2018-01-16 2023-05-21 日商信越化學工業股份有限公司 Silicone adhesive composition, cured product, adhesive film and adhesive tape

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5060074B2 (en) * 2006-05-11 2012-10-31 東レ・ダウコーニング株式会社 Adhesion promoter, curable organopolysiloxane composition, and semiconductor device

Also Published As

Publication number Publication date
KR20130062869A (en) 2013-06-13
CN103131188A (en) 2013-06-05

Similar Documents

Publication Publication Date Title
TWI425053B (en) Curable organopolysiloxane composition and semiconductor device
TWI470029B (en) Curable organopolysiloxane composition and semiconductor device
JP5247979B2 (en) Polyorganosiloxane composition giving a transparent cured product
JP2013139547A (en) Curable composition, cured product, and optical semiconductor device
TW201538637A (en) Addition-curable silicone composition
TWI544665B (en) Silicon oxide compositions for semiconductor encapsulation
KR20100068211A (en) Thermosetting silicone resin composition, silicone resin, silicone resin sheet and use thereof
TW201005040A (en) Curable silicone rubber composition and photosemiconductor device using the same as sealing material
TW200813162A (en) Semiconductor device encapsulated by silicone resin composition, and silicone resin tablet for encapsulating semiconductor device
KR101472829B1 (en) Curable composition, cured product, photo-semiconductor device, and polysiloxane
Liu et al. Self‐adhesive epoxy modified silicone materials for light emitting diode encapsulation
EP3587498B1 (en) Curable organopolysiloxane composition and semiconductor device
JP6974475B2 (en) Curable silicone composition
TWI644986B (en) Curable resin composition
JP5858027B2 (en) Curable composition, cured product, and optical semiconductor device
JP6519531B2 (en) Addition-curable silicone resin composition and die attach material for optical semiconductor device
TW201323524A (en) Curable composition, cured object and optical semiconductor device
JP5696798B2 (en) Polysiloxane
JP2012092172A (en) Composition for sealing optical semiconductor, and light-emitting element
TWI580733B (en) Curable composition and fabricating method thereof, cured object and optical semiconductor device
TWI513766B (en) Curable composition, cured product and optical semiconductor device
KR101169033B1 (en) Transparent Silicone Composition for Optical Semiconductor Die Bonding
TWI582169B (en) Curable composition, cured product and optical semiconductor device
TW201420639A (en) Method for forming protective film, protective film, cured composition and laminated body
KR20130071347A (en) Curable composition and method for producing thereof, cured product, and optical semiconductor device