TWI582169B - Curable composition, cured product and optical semiconductor device - Google Patents

Curable composition, cured product and optical semiconductor device Download PDF

Info

Publication number
TWI582169B
TWI582169B TW103105182A TW103105182A TWI582169B TW I582169 B TWI582169 B TW I582169B TW 103105182 A TW103105182 A TW 103105182A TW 103105182 A TW103105182 A TW 103105182A TW I582169 B TWI582169 B TW I582169B
Authority
TW
Taiwan
Prior art keywords
polyoxyalkylene
group
curable composition
cured product
atom
Prior art date
Application number
TW103105182A
Other languages
Chinese (zh)
Other versions
TW201434991A (en
Inventor
中西康二
根本哲也
後藤佑太
Original Assignee
Jsr股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2013234025A external-priority patent/JP5858027B2/en
Application filed by Jsr股份有限公司 filed Critical Jsr股份有限公司
Publication of TW201434991A publication Critical patent/TW201434991A/en
Application granted granted Critical
Publication of TWI582169B publication Critical patent/TWI582169B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)

Description

硬化性組成物、硬化物及光半導體裝置 Curable composition, cured product, and optical semiconductor device

本發明是有關於一種硬化性組成物、硬化物及光半導體裝置。 The present invention relates to a curable composition, a cured product, and an optical semiconductor device.

為了保護半導體發光元件來避免濕氣或灰塵等,而利用透明樹脂等密封材料將該半導體發光元件密封。為了防止由半導體發光元件發出的光在具有GaN或InGaN等半導體層的折射率高的半導體發光元件與密封材料的界面被反射,提高自半導體發光元件的發光面至外部的光取出效率(亮度),必須提高密封材料的折射率(專利文獻1)。 In order to protect the semiconductor light-emitting element from moisture, dust, and the like, the semiconductor light-emitting element is sealed with a sealing material such as a transparent resin. In order to prevent light emitted from the semiconductor light-emitting element from being reflected at the interface between the semiconductor light-emitting element having a high refractive index of a semiconductor layer such as GaN or InGaN and the sealing material, light extraction efficiency (brightness) from the light-emitting surface of the semiconductor light-emitting element to the outside is improved. It is necessary to increase the refractive index of the sealing material (Patent Document 1).

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2010-123769號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-123769

然而,若提高密封材料的折射率,則雖然自半導體發光元件的發光面至密封材料的光取出效率提高,但若密封材料的折射率提高,密封材料與外部物質,例如空氣(折射率約1.00)的 折射率差變大,光會在密封材料與外部的界面反射。因此,藉由提高密封材料的折射率來提高亮度的方法存在限度。 However, if the refractive index of the sealing material is increased, the light extraction efficiency from the light-emitting surface of the semiconductor light-emitting element to the sealing material is improved, but if the refractive index of the sealing material is increased, the sealing material and an external substance such as air (refractive index of about 1.00) )of The refractive index difference becomes large, and light is reflected at the interface between the sealing material and the outside. Therefore, there is a limit to the method of increasing the brightness by increasing the refractive index of the sealing material.

本發明的目的在於提供亮度優異的光半導體裝置、提供該光半導體裝置中使用的密封材料(硬化物)、以及提供用於形成該硬化物的硬化性組成物。 An object of the present invention is to provide an optical semiconductor device excellent in luminance, a sealing material (cured material) used in the optical semiconductor device, and a curable composition for forming the cured product.

達成上述目的的本發明如以下所述。 The present invention for achieving the above object is as follows.

[1]一種硬化性組成物,其含有:聚矽氧烷(A),其具有芳基、氟原子以及每1分子中至少2個以上的烯基;聚矽氧烷(B),其具有每1分子中至少2個以上的烯基、以及芳基,且不具有氟原子;氫化矽氧烷(C),其具有每1分子中至少2個以上的與矽原子鍵結的氫原子;以及矽氫化反應用觸媒(D)。 [1] A curable composition comprising: a polyoxyalkylene (A) having an aryl group, a fluorine atom, and at least two or more alkenyl groups per molecule; and a polyoxyalkylene (B) having At least two or more alkenyl groups and aryl groups per molecule, and having no fluorine atom; hydrogen hydride oxane (C) having at least two or more hydrogen atoms bonded to a ruthenium atom per molecule; And a catalyst (D) for hydrogenation reaction.

[2]如上述[1]所述的硬化性組成物,其中相對於上述聚矽氧烷(A)以及上述聚矽氧烷(B)的合計,上述聚矽氧烷(A)的含有比例為30重量%~90重量%。 [2] The curable composition according to the above [1], wherein the content ratio of the polyoxyalkylene (A) is based on the total of the polyoxyalkylene (A) and the polyoxyalkylene (B). It is 30% by weight to 90% by weight.

[3]如上述[1]或[2]所述的硬化性組成物,其中上述聚矽氧烷(A)為具有與該聚矽氧烷(A)的主鏈中的矽原子鍵結的下述式(1)所表示的基團的聚矽氧烷:-R1-CF3 (1) [3] The hardenable composition according to the above [1] or [2] wherein the polyfluorene oxide (A) has a bond with a ruthenium atom in a main chain of the polyoxyalkylene (A). Polyoxyalkylene of the group represented by the following formula (1): -R 1 -CF 3 (1)

(式(1)中,R1表示碳數1~20的烷烴二基或者將該烷烴二 基的氫原子以氟原子取代而成的基團)。 (In the formula (1), R 1 represents an alkanediyl group having 1 to 20 carbon atoms or a group obtained by substituting a hydrogen atom of the alkanediyl group with a fluorine atom).

[4]一種硬化物,其是將如上述[1]至[3]中任一項所述的硬化性組成物硬化而獲得。 [4] A cured product obtained by curing the curable composition according to any one of the above [1] to [3].

[5]一種光半導體裝置,其具有如上述[4]所述的硬化物。 [5] An optical semiconductor device comprising the cured product according to [4] above.

本發明的硬化性組成物可形成當作為密封材料等來使用時獲得亮度優異的光半導體裝置的硬化物。具有由本發明的硬化性組成物形成的硬化物作為密封材料的光半導體裝置的亮度優異。 The curable composition of the present invention can form a cured product of an optical semiconductor device which is excellent in luminance when used as a sealing material or the like. The optical semiconductor device having the cured product formed of the curable composition of the present invention as a sealing material is excellent in luminance.

1‧‧‧光半導體裝置 1‧‧‧Optical semiconductor device

2‧‧‧半導體發光元件 2‧‧‧Semiconductor light-emitting elements

3‧‧‧反射器 3‧‧‧ reflector

4‧‧‧密封材料 4‧‧‧ Sealing material

5‧‧‧粒子 5‧‧‧ particles

6‧‧‧電極 6‧‧‧Electrode

7‧‧‧線 7‧‧‧ line

圖1是表示光半導體裝置的一具體例的示意圖。 FIG. 1 is a schematic view showing a specific example of an optical semiconductor device.

<硬化性組成物> <Sclerosing composition>

本發明的硬化性組成物含有:聚矽氧烷(A),其具有每1分子中至少2個以上的烯基、芳基、以及氟原子;聚矽氧烷(B),其具有每1分子中至少2個以上的烯基、以及芳基,且不具有氟原子;氫化矽氧烷(C),其具有每1分子中至少2個以上的與矽原子鍵結的氫原子;以及矽氫化反應用觸媒(D)。 The curable composition of the present invention contains: polyoxyalkylene (A) having at least two or more alkenyl groups, aryl groups, and fluorine atoms per molecule; polyoxyalkylene (B) having 1 per 1 At least two or more alkenyl groups and aryl groups in the molecule, and having no fluorine atom; hydrogen hydride oxane (C) having at least two or more hydrogen atoms bonded to a ruthenium atom per molecule; Catalyst (D) for hydrogenation reaction.

此外,本發明中所謂「聚矽氧烷」,是指具有鍵結有2個以上的矽氧烷單元(Si-O)的分子骨架的化合物。 In the present invention, the term "polyoxyalkylene oxide" means a compound having a molecular skeleton in which two or more siloxane units (Si-O) are bonded.

聚矽氧烷(A) Polyoxane (A)

聚矽氧烷(A)為具有芳基、氟原子以及每1分子中至少2個以上的烯基的聚矽氧烷。聚矽氧烷(A)與聚矽氧烷(B)均為本組成物的主成分,藉由與氫化矽氧烷(C)的矽氫化反應而硬化,成為硬化物的主體。 The polyoxyalkylene (A) is a polyoxyalkylene having an aryl group, a fluorine atom, and at least two or more alkenyl groups per molecule. Both the polyoxyalkylene (A) and the polyoxyalkylene (B) are the main components of the present composition, and are hardened by hydrogenation reaction with a hydrogenated hydrazine (C) to form a main body of the cured product.

聚矽氧烷(A)所具有的烯基例如可列舉:乙烯基、烯丙基、丙烯基、異丙烯基、丁烯基、異丁烯基、戊烯基、庚烯基、己烯基以及環己烯基等。該些烯基中,較佳為乙烯基、烯丙基以及己烯基。 Examples of the alkenyl group which the polyoxyalkylene (A) has include a vinyl group, an allyl group, a propenyl group, an isopropenyl group, a butenyl group, an isobutenyl group, a pentenyl group, a heptenyl group, a hexenyl group, and a ring. Hexyl group and the like. Among the alkenyl groups, a vinyl group, an allyl group and a hexenyl group are preferred.

當將聚矽氧烷(A)中所含的全部Si原子的數量設為100莫耳%時,聚矽氧烷(A)中的烯基的含量較佳為3莫耳%~50莫耳%,更佳為5莫耳%~40莫耳%,尤佳為10莫耳%~30莫耳%。若烯基的含量在上述範圍內,則聚矽氧烷(A)以及聚矽氧烷(B)與氫化矽氧烷(C)的矽氫化反應適當進行,獲得強度高的硬化物。 When the amount of all Si atoms contained in the polyoxyalkylene (A) is set to 100 mol%, the content of the alkenyl group in the polyoxyalkylene (A) is preferably from 3 mol% to 50 mol%. %, more preferably 5 mol% to 40 mol%, and particularly preferably 10 mol% to 30 mol%. When the content of the alkenyl group is within the above range, the hydrazine hydrogenation reaction of the polyoxyalkylene oxide (A) and the polyoxyalkylene oxide (B) with the hydrogenated hydrazine (C) is appropriately carried out to obtain a cured product having high strength.

聚矽氧烷(A)所具有的芳基可列舉苯基、甲苯基、二甲苯基、萘基等。該些芳基中,較佳為苯基。藉由聚矽氧烷(A)具有芳基,當將由本組成物獲得的硬化物用作LED的密封材料時,表現出獲得高亮度的特性。 Examples of the aryl group which the polyoxyalkylene (A) has include a phenyl group, a tolyl group, a xylyl group, a naphthyl group and the like. Among these aryl groups, a phenyl group is preferred. Since the polyoxyalkylene (A) has an aryl group, when the cured product obtained from the present composition is used as a sealing material for an LED, it exhibits characteristics of obtaining high luminance.

當將聚矽氧烷(A)中所含的全部Si原子的數量設為100莫耳%時,聚矽氧烷(A)中所含的芳基的含量較佳為30莫耳%~120莫耳%,更佳為50莫耳%~110莫耳%,尤佳為70莫耳%~100莫耳%。當芳基的含量在30莫耳%~120莫耳%的範圍內時,由本組成物獲得亮度高、折射率高的硬化物。 When the amount of all Si atoms contained in the polyoxyalkylene (A) is set to 100 mol%, the content of the aryl group contained in the polyoxyalkylene (A) is preferably from 30 mol% to 120. Moer%, more preferably 50% by mole to 110% by mole, and particularly preferably 70% by mole to 100% by mole. When the content of the aryl group is in the range of 30 mol% to 120 mol%, a cured product having high luminance and high refractive index is obtained from the composition.

聚矽氧烷(A)具有氟原子。就該方面而言,聚矽氧烷(A)與後述聚矽氧烷(B)不同。 The polyoxyalkylene (A) has a fluorine atom. In this respect, the polyoxyalkylene (A) is different from the polyoxyalkylene (B) described later.

當將聚矽氧烷(A)中所含的全部Si原子的數量設為100莫耳%時,聚矽氧烷(A)中所含的氟原子的含量較佳為1莫耳%~60莫耳%,更佳為3莫耳%~40莫耳%,尤佳為5莫耳%~30莫耳%。若氟原子的含量在上述範圍內,則於將由本組成物獲得的硬化物作為LED的密封材料來使用的情況下,表現出高亮度。 When the amount of all Si atoms contained in the polyoxyalkylene (A) is set to 100 mol%, the content of the fluorine atom contained in the polyoxyalkylene (A) is preferably from 1 mol% to 60%. Moer%, more preferably 3 mol% to 40 mol%, and particularly preferably 5 mol% to 30 mol%. When the content of the fluorine atom is within the above range, when the cured product obtained from the present composition is used as a sealing material for an LED, high luminance is exhibited.

上述聚矽氧烷(A)較佳為具有與該聚矽氧烷(A)的主鏈中的矽原子鍵結的由下述式(1)所表示的基團的聚矽氧烷:-R1-CF3 (1) The polyoxyalkylene (A) is preferably a polyoxyalkylene having a group represented by the following formula (1) bonded to a ruthenium atom in the main chain of the polyoxyalkylene (A):- R 1 -CF 3 (1)

(式(1)中,R1表示碳數1~20的烷烴二基或者將該烷烴二基的氫原子以氟原子取代而成的基團)。 (In the formula (1), R 1 represents an alkanediyl group having 1 to 20 carbon atoms or a group obtained by substituting a hydrogen atom of the alkanediyl group with a fluorine atom).

R1為氫原子可經氟原子取代的碳數1~20的烷烴二基,即碳數1~20的烷烴二基或者將該烷烴二基的氫原子以氟原子取代而成的基團。該烷烴二基的碳數更佳為2~8。 R 1 is an alkanediyl group having 1 to 20 carbon atoms which may be substituted by a fluorine atom, that is, an alkanediyl group having 1 to 20 carbon atoms or a group in which a hydrogen atom of the alkanediyl group is substituted with a fluorine atom. The carbon number of the alkanediyl group is more preferably from 2 to 8.

聚矽氧烷(A)的製造方法例如可列舉以下方法:將具有至少1個烯基、芳基以及氟原子的烷氧基矽烷適當組合使用,藉由日本專利特開平6-9659號公報、日本專利特開2003-183582號公報、日本專利特開2007-008996號公報、日本專利特開 2007-106798號公報、日本專利特開2007-169427號公報以及日本專利特開2010-059359號公報等中記載的公知方法,例如,將具有成為各單元的烯基或芳基的氯矽烷或烷氧基矽烷進行共水解的方法,或藉由利用鹼金屬觸媒等將共水解物進行平衡化反應的方法等來製造的方法。 The method for producing the polyoxyalkylene (A) is, for example, a method in which an alkoxydecane having at least one alkenyl group, an aryl group, and a fluorine atom is used in an appropriate combination, and is disclosed in Japanese Laid-Open Patent Publication No. Hei 6-9659. Japanese Patent Laid-Open No. 2003-183582, Japanese Patent Laid-Open No. 2007-008996, and Japanese Patent Laid-Open A known method described in, for example, JP-A-2007- 169, 427, and JP-A-2010-059359, for example, a chlorodecane or an alkane having an alkenyl group or an aryl group as a unit A method in which oxydecane is co-hydrolyzed, or a method in which a co-hydrolyzate is subjected to an equilibrium reaction by an alkali metal catalyst or the like.

具有氟原子的烷氧基矽烷例如可列舉下述式(2)所表示的烷氧基矽烷。 The alkoxy decane which has a fluorine atom is, for example, an alkoxy decane represented by the following formula (2).

式(2)中,R2為碳原子數1~26的烷基、較佳為碳原子數1~20的烷基的氫原子被部分地或者全部取代為氟原子而成的氟烷基,R3為二價基,例如-(CH2)n-(n為2~20的整數)、-(CH2)n-X-(CH2)P-(-X-為-O-或者-C(O)O-,n為0~2的整數,p為5~25的整數)、或者-QS-(CH2)q-(Q為包含至少1個氧原子的二價基,q為2或3),R4及R5分別獨立地為碳原子數1~6的烷基、或者碳原子數6~8的芳基,r為0、1或2。 In the formula (2), R 2 is a fluoroalkyl group in which an alkyl group having 1 to 26 carbon atoms, preferably an alkyl group having 1 to 20 carbon atoms, is partially or wholly substituted with a fluorine atom. R 3 is a divalent group, for example, -(CH 2 ) n - (n is an integer of 2 to 20), -(CH 2 ) n -X-(CH 2 ) P - (-X- is -O- or - C(O)O-, n is an integer from 0 to 2, p is an integer from 5 to 25), or -QS-(CH 2 ) q - (Q is a divalent group containing at least one oxygen atom, q is 2 or 3), R 4 and R 5 are each independently an alkyl group having 1 to 6 carbon atoms or an aryl group having 6 to 8 carbon atoms, and r is 0, 1, or 2.

上述烷氧基矽烷可列舉:3,3,3-三氟丙基三甲氧基矽烷、3,3,3-三氟丙基三乙氧基矽烷、3,3,3-三氟丙基甲基二甲氧基矽烷、3,3,3-三氟丙基二甲基甲氧基矽烷、4,4,4-三氟丁基三甲氧基矽 烷、4,4,4-三氟丁基三乙氧基矽烷、3,3,4,4,4-五氟丁基三甲氧基矽烷、3,3,4,4,4-五氟丁基三乙氧基矽烷、3,3,4,4,5,5,6,6,7,7,8,8,8-十三氟辛基三甲氧基矽烷、3,3,4,4,5,5,6,6,7,7,8,8,8-十三氟辛基三乙氧基矽烷、3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-十七氟癸基三甲氧基矽烷、3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-十七氟癸基三乙氧基矽烷、15-(三氟乙氧基)十五烷基-15-(三氟乙醯氧基)十五烷基甲基二乙氧基矽烷等。 The alkoxydecane may be exemplified by 3,3,3-trifluoropropyltrimethoxydecane, 3,3,3-trifluoropropyltriethoxydecane, and 3,3,3-trifluoropropylmethyl. Dimethoxy decane, 3,3,3-trifluoropropyl dimethyl methoxy decane, 4,4,4-trifluorobutyltrimethoxy fluorene Alkane, 4,4,4-trifluorobutyltriethoxydecane, 3,3,4,4,4-pentafluorobutyltrimethoxydecane, 3,3,4,4,4-pentafluorobutane Triethoxy decane, 3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyltrimethoxydecane, 3,3,4,4 ,5,5,6,6,7,7,8,8,8-tridecafluorooctyltriethoxydecane, 3,3,4,4,5,5,6,6,7,7, 8,8,9,9,10,10,10-heptadecafluorodecyltrimethoxydecane, 3,3,4,4,5,5,6,6,7,7,8,8,9, 9,10,10,10-heptadecafluorodecyltriethoxydecane, 15-(trifluoroethoxy)pentadecyl-15-(trifluoroacetoxy)pentadecylmethyldi Ethoxy decane and the like.

聚矽氧烷(A)的利用凝膠滲透層析法來測定的聚苯乙烯換算的重量平均分子量通常為100~50000的範圍,較佳為500~10000的範圍。若聚矽氧烷(A)的重量平均分子量在上述範圍內,則使用本組成物來製造密封材料時容易操作,另外,由本組成物獲得的硬化物作為光半導體密封材料而具有充分的強度。 The polystyrene-equivalent weight average molecular weight measured by gel permeation chromatography of polyoxyalkylene (A) is usually in the range of 100 to 50,000, preferably in the range of 500 to 10,000. When the weight average molecular weight of the polyoxyalkylene (A) is within the above range, it is easy to handle when the sealing material is produced using the composition, and the cured product obtained from the composition has sufficient strength as an optical semiconductor sealing material.

相對於聚矽氧烷(A)以及聚矽氧烷(B)的合計,本組成物中的聚矽氧烷(A)的含有比例較佳為30重量%~90重量%,更佳為50重量%~90重量%,尤佳為60~85重量%。若聚矽氧烷(A)的含有比例在上述範圍內,則於將由本組成物獲得的硬化物作為LED的密封材料來使用的情況下,表現出高亮度。 The content of the polyoxyalkylene (A) in the present composition is preferably from 30% by weight to 90% by weight, and more preferably 50%, based on the total of the polyoxyalkylene (A) and the polyoxyalkylene (B). The weight % to 90% by weight, particularly preferably 60 to 85% by weight. When the content ratio of the polyoxyalkylene (A) is within the above range, when the cured product obtained from the present composition is used as a sealing material for an LED, high luminance is exhibited.

聚矽氧烷(B) Polyoxane (B)

聚矽氧烷(B)為具有每1分子中至少2個以上的烯基、以及芳基,且不具有氟原子的聚矽氧烷。聚矽氧烷(B)與聚矽氧烷(A)均為本組成物的主成分,藉由與氫化矽氧烷(C)的矽氫化反應而硬化,成為硬化物的主體。 The polyoxyalkylene (B) is a polyoxyalkylene having at least two or more alkenyl groups and an aryl group per molecule and having no fluorine atom. Both the polyoxyalkylene (B) and the polyoxyalkylene (A) are the main components of the present composition, and are hardened by hydrogenation reaction with hydrazine hydride (C) to form a main body of the cured product.

聚矽氧烷(B)所具有的烯基與聚矽氧烷(A)中所述的烯基相同。 The polyoxyalkylene (B) has an alkenyl group which is the same as the alkenyl group described in the polyoxyalkylene (A).

聚矽氧烷(B)所具有的芳基與聚矽氧烷(A)中所述的芳基相同。 The polyoxyalkylene (B) has the same aryl group as described in the polyoxyalkylene (A).

聚矽氧烷(B)不具有氟原子。就該方面而言,聚矽氧烷(B)與上述聚矽氧烷(A)不同。 The polyoxyalkylene (B) does not have a fluorine atom. In this respect, the polyoxyalkylene (B) is different from the above polyoxyalkylene (A).

聚矽氧烷(B)的利用凝膠滲透層析法來測定的聚苯乙烯換算的重量平均分子量通常在100~50000的範圍內,較佳為500~10000的範圍。若聚矽氧烷(B)的重量平均分子量在上述範圍內,則使用本組成物來製造密封材料時容易操作,另外,由本組成物獲得的硬化物作為光半導體密封材料而具有充分的強度。 The polystyrene-equivalent weight average molecular weight of the polyoxyalkylene (B) measured by gel permeation chromatography is usually in the range of 100 to 50,000, preferably 500 to 10,000. When the weight average molecular weight of the polyoxyalkylene (B) is within the above range, it is easy to handle the production of the sealing material using the composition, and the cured product obtained from the composition has sufficient strength as the optical semiconductor sealing material.

聚矽氧烷(B)可將具有至少1個烯基、芳基以及氟原子的烷氧基矽烷適當組合使用,以與聚矽氧烷(A)相同的方式利用公知方法來製造。 The polyoxyalkylene (B) can be suitably used in combination with an alkoxydecane having at least one alkenyl group, aryl group and fluorine atom, and can be produced by a known method in the same manner as the polyoxyalkylene (A).

氫化矽氧烷(C) Hydrogenated oxane (C)

氫化矽氧烷(C)具有每1分子中至少2個以上的與矽原子鍵結的氫原子(以下亦稱為鍵結矽原子的氫)。氫化矽氧烷(C)是針對聚矽氧烷(A)以及聚矽氧烷(B)的交聯劑,藉由與聚矽氧烷(A)以及聚矽氧烷(B)的矽氫化反應而形成硬化物。 The hydrogenated oxane (C) has at least two or more hydrogen atoms bonded to a ruthenium atom per molecule (hereinafter also referred to as a hydrogen bonded to a ruthenium atom). Hydrogenated oxane (C) is a cross-linking agent for polyoxyalkylene (A) and polyoxyalkylene (B), hydrogenated by hydrazine with polyoxyalkylene (A) and polyoxyalkylene (B) The reaction forms a hardened substance.

氫化矽氧烷(C)只要是於現有的氫矽烷基系聚矽氧烷組成物中作為交聯劑來使用的具有每1分子中至少2個的鍵結矽原子的氫原子的聚矽氧烷,則並無特別限制。 The hydrogenated oxane (C) is a polyoxane having a hydrogen atom bonded to at least two of the ruthenium atoms per molecule, as long as it is used as a crosslinking agent in the conventional hydroalkylene-based polyoxane composition. There is no particular limitation on the alkane.

氫化矽氧烷(C)例如可藉由利用公知方法,使苯基三甲氧基矽烷、二苯基二甲氧基矽烷等烷氧基矽烷與1,1,3,3-四甲基二矽氧烷等氫化矽氧烷在適當的合成溶劑中進行反應而獲得。 The hydrogenated oxane (C) can be, for example, alkoxy decane such as phenyltrimethoxydecane or diphenyldimethoxydecane and 1,1,3,3-tetramethyldifluoride by a known method. A hydrogenated oxane such as oxane is obtained by a reaction in a suitable synthetic solvent.

本發明的硬化性組成物中的氫化矽氧烷(C)的含量較佳為相對於聚矽氧烷(A)以及聚矽氧烷(B)中的烯基的合計量,氫化矽氧烷(C)中的鍵結矽原子的氫的莫耳比成為0.1~5的量,更佳為成為0.5~2的量,尤佳為成為0.7~1.4的量。若氫化矽氧烷(C)的含量在上述範圍內,則組成物的硬化充分進行,另外,所得的硬化物具有充分的耐熱性。 The content of the hydrogenated hydrazine (C) in the curable composition of the present invention is preferably a total amount of the alkenyl group in the polysiloxane (A) and the polyoxyalkylene (B). The molar ratio of hydrogen bonded to the ruthenium atom in (C) is 0.1 to 5, more preferably 0.5 to 2, and particularly preferably 0.7 to 1.4. When the content of the hydroquinone (C) is within the above range, the curing of the composition proceeds sufficiently, and the obtained cured product has sufficient heat resistance.

矽氫化反應用觸媒(D) Catalyst for hydrogenation reaction (D)

矽氫化反應用觸媒(D)是聚矽氧烷(A)以及聚矽氧烷(B)與氫化矽氧烷(C)的矽氫化反應的觸媒。 The catalyst for hydrogenation of hydrazine (D) is a catalyst for the hydrogenation reaction of polyoxyalkylene (A) and polyoxyalkylene (B) with hydrazine hydride (C).

矽氫化反應用觸媒(D)只要是在現有的氫矽烷基系聚矽氧烷組成物中作為矽氫化反應用觸媒來使用的觸媒,則可為無特別限制地使用。 The catalyst for hydrogenation reaction (D) can be used without particular limitation as long as it is used as a catalyst for hydrogenation reaction in a conventional hydroalkylene-based polyoxane composition.

矽氫化反應用觸媒(D)的具體例可列舉:鉑系觸媒、銠系觸媒、鈀系觸媒。該些觸媒中,就促進本組成物的硬化的觀點而言,較佳為鉑系觸媒。鉑系觸媒例如可列舉鉑-烯基矽氧烷錯合物等。烯基矽氧烷例如可列舉:1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷等。尤其就錯合物的穩定性的觀點而言,較佳為1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷。 Specific examples of the catalyst (D) for the hydrogenation reaction include a platinum-based catalyst, a ruthenium-based catalyst, and a palladium-based catalyst. Among these catalysts, a platinum-based catalyst is preferred from the viewpoint of promoting the hardening of the composition. Examples of the platinum-based catalyst include a platinum-alkenyl alkoxylate complex and the like. Examples of the alkenyl oxirane include 1,3-divinyl-1,1,3,3-tetramethyldioxane and 1,3,5,7-tetramethyl-1,3,5. , 7-tetravinylcyclotetraoxane, and the like. Particularly, from the viewpoint of the stability of the complex, 1,3-divinyl-1,1,3,3-tetramethyldioxane is preferred.

本發明的硬化性組成物中的矽氫化反應用觸媒(D)的含量為使聚矽氧烷(A)以及聚矽氧烷(B)與氫化矽氧烷(C)的矽氫化反應在現實中進行的量。 The content of the catalyst (D) for the rhodium hydrogenation reaction in the curable composition of the present invention is a hydrogenation reaction of polyfluorene oxide (A) and polyoxyalkylene (B) with hydrogen hydride (C). The amount carried out in reality.

本發明的硬化性組成物只要達成本發明的目的,則除了上述成分以外,視需要可含有例如:燒製二氧化矽、石英粉末等微粒子狀二氧化矽,氧化鈦、氧化鋅等無機填充劑,環四甲基四乙烯基四矽氧烷等延遲劑,二苯基雙(二甲基乙烯基矽烷氧基)矽烷、苯基三(二甲基乙烯基矽烷氧基)矽烷等稀釋劑,螢光體、顏料、阻燃劑、耐熱劑、抗氧化劑、乙炔醇類等反應抑制劑等。 In addition to the above-mentioned components, the curable composition of the present invention may contain, for example, fine particles of cerium oxide such as fired cerium oxide or quartz powder, and inorganic fillers such as titanium oxide and zinc oxide. a retarder such as cyclotetramethyltetravinyltetraoxane, a diluent such as diphenyl bis(dimethylvinyl decyloxy) decane or phenyl tris(dimethylvinyl decyloxy) decane, Reaction inhibitors such as phosphors, pigments, flame retardants, heat-resistant agents, antioxidants, acetylene alcohols, and the like.

本發明的硬化性組成物可藉由利用混合器等公知的方法,將上述各成分均勻混合來製備。 The curable composition of the present invention can be produced by uniformly mixing the above components by a known method such as a mixer.

本發明的硬化性組成物的25℃下的黏度較佳為1mPa.s~1000000mPa.s,更佳為10mPa.s~10000mPa.s。若黏度在上述範圍內,則本組成物的操作性提高。 The viscosity of the curable composition of the present invention at 25 ° C is preferably 1 mPa. s~1000000mPa. s, more preferably 10mPa. s~10000mPa. s. When the viscosity is within the above range, the workability of the composition is improved.

本發明的硬化性組成物可製備成1種溶液,亦可分成2種溶液來製備,使用時將2種溶液混合來使用。視需要,亦可添加少量的乙炔醇等硬化抑制劑。 The curable composition of the present invention can be prepared into one type of solution, or can be prepared by dividing into two kinds of solutions, and two kinds of solutions are mixed and used at the time of use. A small amount of a hardening inhibitor such as acetylene alcohol may be added as needed.

本發明的硬化性組成物由於含有具有氟原子的聚矽氧烷(A)以及不具有氟原子的聚矽氧烷(B),故而若將本發明的硬化性組成物塗佈於例如基板上,則其塗膜由於表面張力的關係,而於空氣側存在較不具有氟原子的聚矽氧烷(B)而言相對較多的具有氟原子的聚矽氧烷(A)。推定如下:藉由將該塗膜硬化,而 獲得於空氣側具有包含大量氟原子的層的多層結構的硬化物。即推定:若使用本發明的硬化性組成物,則可藉由1次塗佈步驟來獲得具有多層結構的硬化物。而且,該多層結構藉由使折射率下降的氟原子的效果,越為靠近空氣側的層,折射率越降低。因此,該硬化物的空氣側的層與空氣的折射率差變小,結果推定,具有由本發明的硬化性組成物獲得的硬化物的光半導體裝置成為亮度優異的裝置。 Since the curable composition of the present invention contains a polysiloxane (A) having a fluorine atom and a polyoxyalkylene (B) having no fluorine atom, the curable composition of the present invention is applied to, for example, a substrate. Further, the coating film has a relatively large amount of polyoxyalkylene (A) having a fluorine atom on the air side due to the relationship between the surface tension and the polysiloxane (B) having no fluorine atom. Presumed as follows: by hardening the coating film, A cured product of a multilayer structure having a layer containing a large amount of fluorine atoms on the air side is obtained. That is, it is estimated that when the curable composition of the present invention is used, a cured product having a multilayer structure can be obtained by one coating step. Further, the multilayer structure has an effect of lowering the refractive index of the fluorine atom, and the closer to the air side layer, the lower the refractive index. Therefore, the difference in refractive index between the layer on the air side of the cured product and the air is small, and as a result, it is estimated that the optical semiconductor device having the cured product obtained from the curable composition of the present invention is excellent in brightness.

形成每1層時重複塗佈步驟而獲得多層結構的硬化物的方法在以下方面存在問題:(1)繁雜且成本高;(2)當於第1層上塗佈形成第2層的組成物時,根據該組成物的表面張力而存在塗佈性變差的情況,存在無法形成均勻的塗膜的可能性。尤其是包含氟的組成物由於液體的表面張力大幅下降,故而塗佈時排斥的可能性高,另外,存在起泡的可能性,於此方面問題大。本發明的硬化性組成物在產生上述問題的可能性低的方面非常優異。 The method of repeating the coating step for forming each layer to obtain a cured product of a multilayer structure has problems in that (1) is complicated and costly; and (2) a composition for forming a second layer is coated on the first layer. In the case where the coating property is deteriorated depending on the surface tension of the composition, there is a possibility that a uniform coating film cannot be formed. In particular, since the composition containing fluorine is largely degraded by the surface tension of the liquid, there is a high possibility of rejection at the time of coating, and there is a possibility of foaming, which is a problem in this respect. The curable composition of the present invention is extremely excellent in that it is less likely to cause the above problems.

另外,形成多層結構的硬化物的現有組成物,即含有具有氟原子的成分以及不具有氟原子的成分的組成物中,被認為在形成硬化物後,包含氟的成分自硬化物滲出至空氣側,因此預料到以下問題:(1)硬化性不足以及由此引起的硬化物的耐龜裂性不足、(2)硬化物的氣體阻隔性不足。與此相對,本申請案的硬化性組成物在產生此種問題的可能性低的方面非常優異。 Further, in the conventional composition for forming a cured product having a multilayer structure, that is, a composition containing a component having a fluorine atom and a component having no fluorine atom, it is considered that after the formation of the cured product, the component containing fluorine exudes from the hardened material to the air. On the side, the following problems are expected: (1) insufficient hardenability and insufficient crack resistance of the cured product, and (2) insufficient gas barrier property of the cured product. On the other hand, the curable composition of the present application is extremely excellent in that it is less likely to cause such a problem.

<硬化物> <hardened matter>

藉由使本發明的硬化性組成物硬化而獲得硬化物。若利用本 發明的硬化性組成物來密封半導體元件,並使其硬化,則獲得作為密封材料的硬化物。 The cured product is obtained by curing the curable composition of the present invention. If you use this The curable composition of the invention seals the semiconductor element and hardens it to obtain a cured product as a sealing material.

使本發明的硬化性組成物硬化的方法例如可列舉如下方法等:將硬化性組成物塗佈於基板上後,於100℃~180℃下加熱1小時~13小時。 The method of curing the curable composition of the present invention includes, for example, a method in which a curable composition is applied onto a substrate, and then heated at 100 to 180 ° C for 1 hour to 13 hours.

如上所述,推定將本發明的硬化性組成物硬化而獲得的硬化物具有多層結構。在藉由將本發明的硬化性組成物塗佈於基板上並使其硬化而形成的硬化物中,形成源自聚矽氧烷(A)的成分與源自聚矽氧烷(B)的成分的含有比例不同的多個層。具體而言被認為,源自聚矽氧烷(A)的成分的含有比例低且源自聚矽氧烷(B)的成分的含有比例高的第1層形成於基板面上,源自聚矽氧烷(A)的成分的含有比例高且源自聚矽氧烷(B)的成分的含有比例低的第2層形成於第1層上。即,形成於基板面上的第1層的氟原子濃度低,形成於第1層上的第2層的氟原子濃度高。由於本發明的硬化物具有上述多個層,故而推定,當將該硬化物用作半導體發光元件的密封材料時,獲得高亮度的光半導體裝置。 As described above, it is presumed that the cured product obtained by curing the curable composition of the present invention has a multilayer structure. In the cured product formed by applying and hardening the curable composition of the present invention onto a substrate, a component derived from polyoxyalkylene (A) and a component derived from polyoxyalkylene (B) are formed. The components contain a plurality of layers having different ratios. Specifically, it is considered that the content of the component derived from polyoxyalkylene (A) is low, and the first layer having a high content ratio of the component derived from polysiloxane (B) is formed on the substrate surface, and is derived from the polymerization. The second layer having a high content ratio of the component of the siloxane (A) and having a low content of the component derived from the polysiloxane (B) is formed on the first layer. That is, the concentration of fluorine atoms in the first layer formed on the substrate surface is low, and the concentration of fluorine atoms in the second layer formed on the first layer is high. Since the cured product of the present invention has the above-described plurality of layers, it is estimated that when the cured product is used as a sealing material for a semiconductor light-emitting element, an optical semiconductor device having high luminance is obtained.

<光半導體裝置> <Optical semiconductor device>

本發明的光半導體裝置具有將上述硬化性組成物硬化而獲得的硬化物。例如,本發明的光半導體裝置具有半導體發光元件、及包覆該半導體發光元件的上述硬化物。本發明的光半導體裝置是藉由在半導體發光元件上包覆上述硬化性組成物,使該組成物硬化而獲得。使硬化性組成物硬化的方法如上所述。 The optical semiconductor device of the present invention has a cured product obtained by curing the curable composition. For example, the optical semiconductor device of the present invention has a semiconductor light emitting element and the cured material covering the semiconductor light emitting element. The optical semiconductor device of the present invention is obtained by coating the above-mentioned curable composition on a semiconductor light-emitting device and curing the composition. The method of hardening the curable composition is as described above.

光半導體裝置可列舉發光二極體(Light Emitting Diode,LED)以及雷射二極體(Laser Diode,LD)等。 Examples of the optical semiconductor device include a light emitting diode (LED), a laser diode (LD), and the like.

圖1是本發明的光半導體裝置的一具體例的示意圖。光半導體裝置1包括:電極6,其為銀電極等;半導體發光元件2,其配置於電極6上,且利用線7而與電極6電性連接;反射器3,其以收納半導體發光元件2的方式配置;以及密封材料4,其填充於反射器3內,將半導體發光元件2密封。密封材料4包含將本發明的硬化性組成物硬化而獲得的硬化物。密封材料4中分散有二氧化矽或螢光體等的粒子5。 Fig. 1 is a schematic view showing a specific example of an optical semiconductor device of the present invention. The optical semiconductor device 1 includes an electrode 6 which is a silver electrode or the like, a semiconductor light emitting element 2 which is disposed on the electrode 6, and is electrically connected to the electrode 6 by a wire 7 and a reflector 3 for accommodating the semiconductor light emitting element 2 And a sealing material 4 filled in the reflector 3 to seal the semiconductor light emitting element 2. The sealing material 4 contains a cured product obtained by curing the curable composition of the present invention. Particles 5 such as cerium oxide or a phosphor are dispersed in the sealing material 4.

如上所述,具有上述硬化物作為密封材料的光半導體裝置的亮度高。 As described above, the optical semiconductor device having the cured product described above as a sealing material has high luminance.

[實施例] [Examples]

1.硬化性組成物的準備 1. Preparation of hardenable composition

1-1.結構分析 1-1. Structural analysis

所合成的化合物的結構是藉由29Si核磁共振(nuclear magnetic resonance,NMR)以及1H NMR來算出。 The structure of the synthesized compound was calculated by 29 Si nuclear magnetic resonance (NMR) and 1 H NMR.

1-2.重量平均分子量 1-2. Weight average molecular weight

重量平均分子量(Mw)是利用凝膠滲透層析法(GPC),以下述條件進行測定,作為聚苯乙烯換算值而求出。 The weight average molecular weight (Mw) was measured by gel permeation chromatography (GPC) under the following conditions, and was determined as a polystyrene equivalent value.

裝置:HLC-8120C(東曹(Tosoh)公司製造) Device: HLC-8120C (manufactured by Tosoh Corporation)

管柱:TSK-gel Multipore HXL-M(東曹公司製造) Column: TSK-gel Multipore HXL-M (made by Tosoh Corporation)

溶離液:四氫呋喃(THF),流量0.5mL/min,負載量5.0%, 100μL Dissolved solution: tetrahydrofuran (THF), flow rate 0.5 mL/min, loading 5.0%, 100μL

1-3.各成分的合成 1-3. Synthesis of each component

以下列舉的矽氧烷單元是以如下所述的記號來表示:M(Vi):(ViMe2SiO1/2) The azide units listed below are represented by the following symbols: M(Vi): (ViMe 2 SiO 1/2 )

M(H):(HMe2SiO1/2) M(H): (HMe 2 SiO 1/2 )

D(Ph):(Ph2SiO2/2) D(Ph): (Ph 2 SiO 2/2 )

D(PhMe):(PhMeSiO2/2) D(PhMe): (PhMeSiO 2/2 )

D(Ep):(MeEpSiO2/2) D(Ep): (MeEpSiO 2/2 )

T(Ph):(PhSiO3/2) T(Ph): (PhSiO 3/2 )

T(F):(CF3CH2CH2SiO3/2) T(F): (CF 3 CH 2 CH 2 SiO 3/2 )

(Me表示甲基,Ph表示苯基,Vi表示乙烯基,Ep表示環氧3-縮水甘油氧基丙基)。 (Me represents a methyl group, Ph represents a phenyl group, Vi represents a vinyl group, and Ep represents an epoxy 3-glycidoxypropyl group).

[合成例1]聚矽氧烷(A1)的合成 [Synthesis Example 1] Synthesis of polyoxyalkylene (A1)

於反應釜中加入1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷112g、苯基三甲氧基矽烷476g、二苯基二甲氧基矽烷293g、三氟丙基三甲氧基矽烷262g、水236g、三氟甲磺酸0.9g以及甲苯460g,加熱回流1小時。繼而,添加氫氧化鉀0.6g,回流5小時。利用乙酸加以中和後,進行水洗,獲得包含20mol的M(Vi)、40mol的T(Ph)、20mol的D(Ph)以及20mol的T(F)的聚矽氧烷(A1)。聚矽氧烷(A1)的重量平均分子量為1,700。 1,3-Divinyl-1,1,3,3-tetramethyldioxane 112g, phenyltrimethoxydecane 476g, diphenyldimethoxydecane 293g, trifluoroethylene were added to the reaction vessel. 262 g of propyltrimethoxydecane, 236 g of water, 0.9 g of trifluoromethanesulfonic acid and 460 g of toluene were heated under reflux for 1 hour. Then, 0.6 g of potassium hydroxide was added and refluxed for 5 hours. After neutralization with acetic acid, water washing was carried out to obtain a polyoxyalkylene (A1) containing 20 mol of M(Vi), 40 mol of T(Ph), 20 mol of D(Ph), and 20 mol of T(F). The polyoxyalkylene (A1) had a weight average molecular weight of 1,700.

[合成例2]聚矽氧烷(B1)的合成 [Synthesis Example 2] Synthesis of polyoxyalkylene (B1)

於反應釜中加入1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷37.3 g、苯基三甲氧基矽烷234g、甲基苯基二甲氧基矽烷97.7g、水55g、三氟甲磺酸0.3g以及甲苯146g,加熱回流1小時。繼而,添加3-縮水甘油氧基丙基甲基二甲氧基矽烷4.4g及氫氧化鉀0.3g,加熱回流5小時。利用酸加以中和後,使用甲苯及水進行分液萃取,獲得包含20mol的M(Vi)、59mol的T(Ph)、20mol的D(PhMe)以及1mol的D(Ep)的聚矽氧烷(B1)。聚矽氧烷(B1)的重量平均分子量為1,600。 Add 1,3-divinyl-1,1,3,3-tetramethyldioxane 37.3 to the reactor g, 234 g of phenyltrimethoxydecane, 97.7 g of methylphenyldimethoxydecane, 55 g of water, 0.3 g of trifluoromethanesulfonic acid, and 146 g of toluene were heated under reflux for 1 hour. Then, 4.4 g of 3-glycidoxypropylmethyldimethoxydecane and 0.3 g of potassium hydroxide were added, and the mixture was heated under reflux for 5 hours. After neutralization with an acid, liquid separation extraction was carried out using toluene and water to obtain a polyoxyxane containing 20 mol of M(Vi), 59 mol of T(Ph), 20 mol of D(PhMe), and 1 mol of D(Ep). (B1). The polyoxyalkylene (B1) had a weight average molecular weight of 1,600.

[合成例3]聚矽氧烷(B2)的合成 [Synthesis Example 3] Synthesis of polyoxyalkylene (B2)

於反應釜中添加苯基三甲氧基矽烷149g、二苯基二甲氧基矽烷183g、三氟甲磺酸0.6g、1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷653g,繼而,添加乙酸40g後,於50℃下加熱3小時。加熱後,使用甲苯及水進行分液萃取,獲得包含70mol的M(Vi)、15mol的T(Ph)以及15mol的D(Ph)的聚矽氧烷(B2)。聚矽氧烷(B2)的重量平均分子量為500。 149 g of phenyltrimethoxydecane, 183 g of diphenyldimethoxydecane, 0.6 g of trifluoromethanesulfonic acid, and 1,3-divinyl-1,1,3,3-tetramethyl were added to the reaction vessel. 653 g of dioxane, and then 40 g of acetic acid was added, and then heated at 50 ° C for 3 hours. After heating, liquid separation extraction was carried out using toluene and water to obtain polysiloxane (B2) containing 70 mol of M(Vi), 15 mol of T(Ph), and 15 mol of D(Ph). The polyoxyalkylene (B2) has a weight average molecular weight of 500.

[合成例4]聚矽氧烷(B3)的合成 [Synthesis Example 4] Synthesis of polyoxyalkylene (B3)

於反應釜中加入1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷82g、苯基三甲氧基矽烷525g、水143g、三氟甲磺酸0.4g以及甲苯500g,加熱回流1小時。繼而,添加3-縮水甘油氧基丙基甲基二甲氧基矽烷314g、水130g、以及氫氧化鉀0.5g,加熱回流1小時。利用酸加以中和後,使用甲苯及水進行分液萃取,獲得包含25mol的M(Vi)、75mol的T(Ph)、以及40mol的D(Ep)的聚矽氧烷(B3)。聚矽氧烷(B3)的重量平均分子量為2,800。 In the reaction vessel, 82 g of 1,3-divinyl-1,1,3,3-tetramethyldioxane, 525 g of phenyltrimethoxydecane, 143 g of water, 0.4 g of trifluoromethanesulfonic acid, and toluene were added. 500 g, heated to reflux for 1 hour. Then, 314 g of 3-glycidoxypropylmethyldimethoxydecane, 130 g of water, and 0.5 g of potassium hydroxide were added, and the mixture was heated under reflux for 1 hour. After neutralizing with an acid, liquid separation extraction was carried out using toluene and water to obtain a polyoxyalkylene (B3) containing 25 mol of M(Vi), 75 mol of T(Ph), and 40 mol of D(Ep). The polyoxyalkylene (B3) had a weight average molecular weight of 2,800.

[合成例5]聚矽氧烷(C1)的合成 [Synthesis Example 5] Synthesis of polyoxyalkylene (C1)

於反應釜中加入二苯基二甲氧基矽烷220g及三氟甲磺酸0.6g、1,1,3,3-四甲基二矽氧烷60.5g,一邊於室溫下攪拌一邊花30分鐘滴加乙酸108g。滴加結束後,將混合液一邊攪拌一邊於50℃下加熱3小時,繼而,於80℃下加熱2小時。加熱後,使用甲苯及水進行分液萃取,獲得下述式(3)所示的聚矽氧烷(C1)。 220 g of diphenyl dimethoxy decane, 0.6 g of trifluoromethanesulfonic acid, and 60.5 g of 1,1,3,3-tetramethyldioxane were added to the reaction vessel, and 30 while stirring at room temperature. 108 g of acetic acid was added dropwise in a minute. After completion of the dropwise addition, the mixture was heated at 50 ° C for 3 hours while stirring, and then heated at 80 ° C for 2 hours. After heating, liquid separation extraction was carried out using toluene and water to obtain a polyoxyalkylene (C1) represented by the following formula (3).

[合成例6]聚矽氧烷(C2)的合成 [Synthesis Example 6] Synthesis of polyoxyalkylene (C2)

於反應釜中加入苯基三甲氧基矽烷40g及三氟甲磺酸0.06g、1,1,3,3-四甲基二矽氧烷20.3g,一邊於室溫下攪拌一邊花30分鐘滴加乙酸54g。滴加結束後,將混合液一邊攪拌一邊於50℃下加熱3小時。加熱後,使用甲苯及水進行分液萃取,獲得包含60mol的M(H)、以及40mol的T(Ph)的聚矽氧烷(C2)。聚矽氧烷(C2)的重量平均分子量為800。 40 g of phenyltrimethoxydecane, 0.06 g of trifluoromethanesulfonic acid, and 20.3 g of 1,1,3,3-tetramethyldioxane were added to the reaction vessel, and the mixture was stirred for 30 minutes while stirring at room temperature. Add acetic acid 54g. After completion of the dropwise addition, the mixture was heated at 50 ° C for 3 hours while stirring. After heating, liquid separation extraction was carried out using toluene and water to obtain a polyoxyalkylene (C2) containing 60 mol of M(H) and 40 mol of T(Ph). The polyoxyalkylene (C2) has a weight average molecular weight of 800.

2.硬化性組成物的製備 2. Preparation of hardenable composition

[實施例1~實施例6、以及比較例1~比較例3] [Example 1 to Example 6, and Comparative Example 1 to Comparative Example 3]

將下述表1所示成分以表1所示的調配量進行混合,獲得實施例1~實施例6以及比較例1~比較例3的硬化性組成物。表1中的「份」表示質量份。此外,化合物(A)中的鍵結矽原子的氫原子相對於聚矽氧烷(B)中的烯基的莫耳比全部為1.05。另外,表1中的各成分的詳細情況如以下所述。 The components shown in the following Table 1 were mixed in the amounts shown in Table 1, and the curable compositions of Examples 1 to 6 and Comparative Examples 1 to 3 were obtained. The "parts" in Table 1 represent parts by mass. Further, the molar ratio of the hydrogen atom of the bonded ruthenium atom in the compound (A) to the alkenyl group in the polyoxyalkylene (B) was 1.05. In addition, the details of each component in Table 1 are as follows.

矽氫化用反應觸媒(D1):鉑與1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷的錯合物(鉑金屬量為4質量%) Reaction catalyst for hydrogenation of hydrazine (D1): a complex of platinum with 1,3-divinyl-1,1,3,3-tetramethyldioxane (the amount of platinum metal is 4% by mass)

化合物(E1):乙炔基環己醇 Compound (E1): ethynylcyclohexanol

化合物(E2):3-甲基-1-丁炔-3-醇 Compound (E2): 3-methyl-1-butyn-3-ol

化合物(E3):3,5-二甲基-1-己炔-3-醇 Compound (E3): 3,5-dimethyl-1-hexyn-3-ol

3.硬化性組成物的評價 3. Evaluation of hardening composition

對於實施例1~實施例6以及比較例1~比較例3的硬化性組成物,利用下述(3-1)~(3-5)的方法進行評價。將評價結果示於表1中。 The curable compositions of Examples 1 to 6 and Comparative Examples 1 to 3 were evaluated by the following methods (3-1) to (3-5). The evaluation results are shown in Table 1.

3-1.亮度上升率 3-1. Brightness increase rate

將硬化性組成物塗佈於光學用半導體的表面安裝型(俯視型,包含由圖1的半導體發光元件2、電極6、線7以及反射器3構成的部分)封裝體上,於150℃下加熱1小時,藉此製成評價用樣品。 The curable composition is applied to a surface mount type (a plan view including a portion including the semiconductor light-emitting device 2, the electrode 6, the wire 7, and the reflector 3 of FIG. 1) of the optical semiconductor at 150 ° C. The sample for evaluation was prepared by heating for 1 hour.

使用總輻射通量測定裝置(瞬間多通道測光偵測器(intensified multichannel photodetector)MCPD-3700,Φ300mm積分球(半球積分球)),實施上述評價用樣品的輻射通量測定。以%來算出上述評價用樣品的輻射通量相對於對塗佈密封材料之前的封裝體通電而使其發光來測定的初始輻射通量的比率,對依據比較例1的硬化性組成物的輻射通量的比率的上升率進行評價。 The radiant flux measurement of the above-mentioned evaluation sample was carried out using a total radiant flux measuring device (intensified multichannel photodetector MCPD-3700, Φ300 mm integrating sphere (hemispherical integrating sphere)). The ratio of the radiant flux of the sample for evaluation to the initial radiant flux measured by energization of the package before application of the sealing material to the radiant flux, and the radiation of the curable composition according to Comparative Example 1 was calculated in %. The rate of increase in the ratio of flux is evaluated.

3-2.高溫高濕試驗後的耐龜裂性 3-2. Crack resistance after high temperature and high humidity test

將上述「2.硬化性組成物的製備」中所得的硬化性組成物注 入至LED封裝體(表面安裝型,俯視型)中,於100℃下加熱1小時,繼而於150℃下加熱5小時,製作10個於LED封裝體中形成有硬化物的樣品(以下稱為評價用樣品1)。將所得的評價用樣品1放入至恆溫恆濕槽(愛斯佩克(Espec)製造,商品名「PL-3KP」)中,於85℃、85%RH的環境下保持8小時後,使用焊料回流裝置(千住金屬工業股份有限公司製造,商品名「STR-2010」),於260℃下加熱20秒(高溫高濕試驗)。利用光學顯微鏡來觀察高溫高濕試驗後的硬化物的龜裂的有無,評價高溫高濕試驗後的耐龜裂性。以下述基準進行評價。 Note the hardenable composition obtained in the above "2. Preparation of curable composition" The LED package (surface mount type, top view type) was heated at 100 ° C for 1 hour, and then heated at 150 ° C for 5 hours to prepare 10 samples in which a cured product was formed in the LED package (hereinafter referred to as Sample 1) for evaluation. The obtained sample for evaluation 1 was placed in a constant temperature and humidity chamber (manufactured by Espec, trade name "PL-3KP"), and kept in an environment of 85 ° C and 85% RH for 8 hours, and then used. A solder reflow device (manufactured by Senju Metal Industry Co., Ltd., trade name "STR-2010") was heated at 260 ° C for 20 seconds (high temperature and high humidity test). The presence or absence of cracks of the cured product after the high-temperature and high-humidity test was observed by an optical microscope, and the crack resistance after the high-temperature and high-humidity test was evaluated. The evaluation was performed on the basis of the following criteria.

A:10個樣品的任一者上均無龜裂。 A: No cracks were observed on any of the 10 samples.

B:10個樣品中1個~4個樣品上有龜裂。 B: One to four samples of 10 samples had cracks.

C:10個樣品中5個以上的樣品上有龜裂。 C: There were cracks on more than 5 of the 10 samples.

3-3.對硫化氫的氣體阻隔性 3-3. Gas barrier to hydrogen sulfide

將上述「2.硬化性組成物的製備」中所得的硬化性組成物注入至LED封裝體(表面安裝型,俯視型)中,於100℃下加熱1小時,繼而於150℃下加熱5小時,製作於LED封裝體中形成有硬化物的樣品(以下稱為評價用樣品2)。於充滿包含90體積%空氣以及10體積%硫化氫的氣體的加熱容器內放入評價用樣品2,將評價用樣品2於80℃下加熱24小時。利用光學顯微鏡來觀察加熱前後的評價用樣品2的LED封裝體的銀電極的外觀,評價對硫化氫的氣體阻隔性。以下述基準進行評價。 The curable composition obtained in the above "2. Preparation of a curable composition" was injected into an LED package (surface mount type, plan view type), and heated at 100 ° C for 1 hour, followed by heating at 150 ° C for 5 hours. A sample in which a cured product was formed in the LED package (hereinafter referred to as sample for evaluation 2) was prepared. The sample for evaluation 2 was placed in a heating vessel filled with a gas containing 90% by volume of air and 10% by volume of hydrogen sulfide, and the sample for evaluation 2 was heated at 80 ° C for 24 hours. The appearance of the silver electrode of the LED package of the sample 2 for evaluation before and after heating was observed with an optical microscope, and the gas barrier property against hydrogen sulfide was evaluated. The evaluation was performed on the basis of the following criteria.

A:於加熱前後,銀電極無顏色變化。 A: There is no color change in the silver electrode before and after heating.

B:加熱後,銀電極部分微黃色化。 B: After heating, the silver electrode portion is slightly yellowed.

C:加熱後,銀電極部分黑色化。 C: After heating, the silver electrode portion is blackened.

3-4.硬度 3-4. Hardness

於鐵氟龍(Teflon)的平板上鑲嵌2mm厚的框,以成為框的高度的方式塗佈上述「2.硬化性組成物的製備」中所得的硬化性組成物,於150℃的熱風循環式烘箱中加熱5小時,藉此製作長5mm、寬5mm、高1mm的硬化物。利用JIS K6253中規定的D型硬度計來測定該硬化物的硬度。 A 2 mm-thick frame was placed on a Teflon plate, and the curable composition obtained in the above "2. Preparation of a curable composition" was applied to the height of the frame, and the hot air circulation was performed at 150 ° C. The mixture was heated in an oven for 5 hours to prepare a cured product having a length of 5 mm, a width of 5 mm, and a height of 1 mm. The hardness of the cured product was measured using a D-type hardness tester specified in JIS K6253.

3-5.黏度 3-5. Viscosity

使用E型黏度計,於25℃下對硬化性組成物進行測定。 The curable composition was measured at 25 ° C using an E-type viscometer.

1‧‧‧光半導體裝置 1‧‧‧Optical semiconductor device

2‧‧‧半導體發光元件 2‧‧‧Semiconductor light-emitting elements

3‧‧‧反射器 3‧‧‧ reflector

4‧‧‧密封材料 4‧‧‧ Sealing material

5‧‧‧粒子 5‧‧‧ particles

6‧‧‧電極 6‧‧‧Electrode

7‧‧‧線 7‧‧‧ line

Claims (4)

一種硬化性組成物,其含有:聚矽氧烷(A),其具有芳基、氟原子及每1分子中至少2個以上的烯基;聚矽氧烷(B),其具有每1分子中至少2個以上的烯基、以及芳基,且不具有氟原子;氫化矽氧烷(C),其具有每1分子中至少2個以上的與矽原子鍵結的氫原子;以及矽氫化反應用觸媒(D),且相對於上述聚矽氧烷(A)以及上述聚矽氧烷(B)的合計,上述聚矽氧烷(A)的含有比例為30重量%~90重量%。 A curable composition comprising: a polyoxyalkylene (A) having an aryl group, a fluorine atom, and at least two or more alkenyl groups per molecule; and a polyoxyalkylene (B) having one molecule per molecule At least two or more alkenyl groups and aryl groups, and having no fluorine atom; hydrogen hydride oxane (C) having at least two or more hydrogen atoms bonded to a ruthenium atom per molecule; The reaction catalyst (D) is contained in an amount of 30% by weight to 90% by weight based on the total of the polyoxyalkylene oxide (A) and the polyoxyalkylene oxide (B). . 如申請專利範圍第1項所述的硬化性組成物,其中上述聚矽氧烷(A)為具有與該聚矽氧烷(A)的主鏈中的矽原子鍵結的下述式(1)所表示的基團的聚矽氧烷:-R1-CF3 (1)式(1)中,R1表示碳數1~20的烷烴二基或者將該烷烴二基的氫原子以氟原子取代而成的基團。 The curable composition according to claim 1, wherein the polyoxyalkylene (A) is a compound having the following formula (1) bonded to a ruthenium atom in the main chain of the polyoxyalkylene (A). a polyoxyalkylene group represented by a group: -R 1 -CF 3 (1) In the formula (1), R 1 represents an alkanediyl group having 1 to 20 carbon atoms or a hydrogen atom of the alkanediyl group is fluorine A group substituted by an atom. 一種硬化物,其是將如申請專利範圍第1項至第2項中任一項所述的硬化性組成物硬化而獲得。 A cured product obtained by curing the curable composition according to any one of the first to second aspects of the invention. 一種光半導體裝置,其具有如申請專利範圍第3項所述的硬化物。 An optical semiconductor device having a cured product as described in claim 3 of the patent application.
TW103105182A 2013-03-07 2014-02-18 Curable composition, cured product and optical semiconductor device TWI582169B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013045254 2013-03-07
JP2013234025A JP5858027B2 (en) 2013-03-07 2013-11-12 Curable composition, cured product, and optical semiconductor device

Publications (2)

Publication Number Publication Date
TW201434991A TW201434991A (en) 2014-09-16
TWI582169B true TWI582169B (en) 2017-05-11

Family

ID=51756668

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103105182A TWI582169B (en) 2013-03-07 2014-02-18 Curable composition, cured product and optical semiconductor device

Country Status (2)

Country Link
KR (1) KR101733960B1 (en)
TW (1) TWI582169B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101880396A (en) * 2010-06-03 2010-11-10 杭州师范大学 Preparation method of organic silicon rubber for encapsulating LED being convenient for vacuum defoamation
CN102850803A (en) * 2011-06-30 2013-01-02 信越化学工业株式会社 Addition curing type silicone composition and optical element

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6841647B2 (en) * 2001-11-06 2005-01-11 National Starch And Chemical Investment Holding Corporation Fluid resistant silicone encapsulant

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101880396A (en) * 2010-06-03 2010-11-10 杭州师范大学 Preparation method of organic silicon rubber for encapsulating LED being convenient for vacuum defoamation
CN102850803A (en) * 2011-06-30 2013-01-02 信越化学工业株式会社 Addition curing type silicone composition and optical element

Also Published As

Publication number Publication date
KR20140110718A (en) 2014-09-17
KR101733960B1 (en) 2017-05-10
TW201434991A (en) 2014-09-16

Similar Documents

Publication Publication Date Title
JP6297070B2 (en) Curable silicone composition, cured product thereof, and optical semiconductor device
TWI661007B (en) Curable silicone composition, curable hot-melt silicone, and optical device
TW201242998A (en) A silicone resin composition and an optical semiconductor device making use of the composition
EP1947128A1 (en) Thermosetting resin composition and photosemiconductor encapsulation material
TWI577740B (en) A hardened resin composition, a hardened product, a packaging material, and a semiconductor device
KR101472829B1 (en) Curable composition, cured product, photo-semiconductor device, and polysiloxane
JP2013139547A (en) Curable composition, cured product, and optical semiconductor device
TWI558773B (en) Curable composition and method for manufacturing the same
TW201502208A (en) Semiconductor device and curable silicone composition for sealing a semiconductor element
JP5858027B2 (en) Curable composition, cured product, and optical semiconductor device
TW201422723A (en) Curable silicone composition, cured product thereof, and optical semiconductor device
JP6643990B2 (en) Cured body
KR20190050999A (en) Curable resin composition, cured product thereof, and semiconductor device
TW201803913A (en) Addition-curable silicone resin composition
KR20180127647A (en) Curable resin composition, cured product thereof, and semiconductor device
KR102363592B1 (en) Curable resin composition, cured product thereof, and semiconductor device
JP2008255295A (en) Thermosetting composition and optical semiconductor sealing material
TW201412893A (en) Coating agent, electrical-electronic equipment, and method for protecting metal parts of electrical-electronic equipment
TWI499644B (en) Curable composition, cured article and optical semiconductor device
TW201627373A (en) Addition reaction curing type resin composition and optical semiconductor device
TWI634160B (en) Organic-silicon metal composites, curable organopolysiloxane composition comprising thereof, and optical material comprising the composition
TWI582169B (en) Curable composition, cured product and optical semiconductor device
TWI513766B (en) Curable composition, cured product and optical semiconductor device
JP2012082320A (en) Semi-cured silicone resin sheet
TWI580733B (en) Curable composition and fabricating method thereof, cured object and optical semiconductor device