TWI513766B - Curable composition, cured product and optical semiconductor device - Google Patents

Curable composition, cured product and optical semiconductor device Download PDF

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TWI513766B
TWI513766B TW102110411A TW102110411A TWI513766B TW I513766 B TWI513766 B TW I513766B TW 102110411 A TW102110411 A TW 102110411A TW 102110411 A TW102110411 A TW 102110411A TW I513766 B TWI513766 B TW I513766B
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curable composition
cured product
compound
aryl group
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TW201341472A (en
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Yuuta Gotou
Kouji Nakanishi
Tetsuya Nemoto
Hiroyuki Nomura
Kouichi Hasegawa
Kentarou Tamaki
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Jsr Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)

Description

硬化性組成物、硬化物以及光半導體裝置Curable composition, cured product, and optical semiconductor device

本發明是有關於一種硬化性組成物、硬化物以及光半導體裝置。The present invention relates to a curable composition, a cured product, and an optical semiconductor device.

矽酮樹脂已被廣泛用作以LED元件為首之半導體元件的密封材料等。矽酮樹脂與先前用作密封材料的環氧樹脂相比而言,耐熱性、透明性以及耐變色性等優異,另一方面抗彎強度等機械特性低,因此存在由於對LED通電或點亮時所產生的熱衝擊或高溫高濕環境等而容易產生龜裂等問題。Anthrone resin has been widely used as a sealing material for semiconductor elements including LED elements. The fluorenone resin is superior in heat resistance, transparency, and discoloration resistance as compared with the epoxy resin previously used as a sealing material, and on the other hand, mechanical properties such as bending strength are low, and thus the LED is energized or lit. Problems such as cracks are likely to occur due to thermal shock or high-temperature and high-humidity environments generated during the period.

作為防止此種龜裂之產生的技術,於專利文獻1中揭示了一種有機聚矽氧烷組成物,其含有:於1分子中具有至少2個與矽原子鍵結的烯基,且具有特定矽氧烷單元的分支結構的有機聚矽氧烷;於1分子中具有至少2個與矽原子鍵結之氫原子,且於25℃下之黏度為1000 mPas以下的直鏈狀有機氫化聚矽氧烷;加成反應觸媒。於專利文獻2中揭示了一種聚有機矽氧烷組成物,其包含:包含具有特定有機基的直鏈狀聚有機矽氧烷以及具有特定矽氧烷單元的分支狀聚有機矽氧烷的含有烯基的聚有機矽氧烷;具有特定矽氧烷單元的在分子 中包含3個以上與矽原子鍵結的氫原子的聚烷基氫矽氧烷;鉑族金屬化合物。As a technique for preventing the occurrence of such cracks, Patent Document 1 discloses an organic polyoxoxane composition containing at least two alkenyl groups bonded to a ruthenium atom in one molecule, and having a specific a polyorganosiloxane having a branched structure of a siloxane unit; a linear organohydrogenated polyfluorene having at least two hydrogen atoms bonded to a ruthenium atom in one molecule and having a viscosity of less than 1000 mPas at 25 ° C Oxygenane; addition reaction catalyst. Patent Document 2 discloses a polyorganosiloxane composition comprising: a linear polyorganosiloxane having a specific organic group and a branched polyorganosiloxane having a specific siloxane unit; a polyorganosiloxane having an alkenyl group; a molecule having a specific oxane unit A polyalkylhydroquinone oxide containing three or more hydrogen atoms bonded to a ruthenium atom; a platinum group metal compound.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1]日本專利特開2011-225715號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-225715

[專利文獻2]日本專利特開2006-335857號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2006-335857

本發明之目的在於提供可形成對熱衝擊或高溫高濕條件等具有高耐受性,即使在嚴酷的環境下亦難以產生龜裂的硬化物的硬化性聚矽氧烷組成物。An object of the present invention is to provide a curable polyoxyalkylene composition which can form a cured product which is highly resistant to thermal shock or high-temperature and high-humidity conditions and which is less likely to cause cracks even in a severe environment.

本發明是一種硬化性組成物,其特徵在於含有:The present invention is a hardenable composition characterized by comprising:

下述式(1)所表示的化合物(A)、下述化學式(2)所表示的聚矽氧烷(B)、以及矽氫化反應(hydrosilylation reaction)用觸媒(C)。The compound (A) represented by the following formula (1), the polyoxyalkylene (B) represented by the following chemical formula (2), and the catalyst (C) for hydrogenation reaction (hydrosilylation reaction).

(式中,n表示1以上之整數。R1 以及R2 表示碳數為1~4之烷基。Ar表示芳基。)(wherein, n represents an integer of 1 or more. R 1 and R 2 represent an alkyl group having 1 to 4 carbon atoms. Ar represents an aryl group.)

[化2](R3 3 SiO1/2 )a (R4 2 SiO2/2 )b (R5 2 SiO2/2 )c (R6 SiO3/2 )d (SiO4/2 )e (XO1/2 )f (2)(R 3 3 SiO 1/2 ) a (R 4 2 SiO 2/2 ) b (R 5 2 SiO 2/2 ) c (R 6 SiO 3/2 ) d (SiO 4/2 ) e (XO 1/2 ) f (2)

(R3 、R5 以及R6 分別獨立地表示有機基。其中,所有R3 以及R6 中的至少2個是烯基,R5 在此R5 所鍵結的矽原子上鍵結的另1個R5 為芳基時,並非碳數為1~4之烷基以及芳基。R4 分別獨立地表示碳數為1~4之烷基或芳基,R4 中的至少1個表示芳基。X表示氫原子或碳數為1~3之烷基。a、c、e以及f分別獨立地表示0以上之整數。b以及d分別獨立地表示1以上之整數。其中,在a為0時,d為2以上之整數。)(R 3, R 5 and R 6 each independently represent an organic group wherein all of R 3, and R is at least two 6 is an alkenyl group, R 5 on the silicon atoms of R 5 are bonded bonded to another When one R 5 is an aryl group, it is not an alkyl group having 1 to 4 carbon atoms and an aryl group. R 4 each independently represents an alkyl group or an aryl group having 1 to 4 carbon atoms, and at least one of R 4 represents An aryl group. X represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and a, c, e, and f each independently represent an integer of 0 or more. b and d each independently represent an integer of 1 or more. When it is 0, d is an integer of 2 or more.)

在所述硬化性組成物中,較佳的是所述化學式(2)之R4 為芳基。In the hardenable composition, it is preferred that R 4 of the chemical formula (2) is an aryl group.

另一發明是一種硬化物,其是將所述硬化性組成物硬化而得。Another invention is a cured product obtained by hardening the curable composition.

又一發明是一種光半導體裝置,其包含所述硬化物。Yet another invention is an optical semiconductor device comprising the cured product.

本發明的硬化性組成物可形成對熱衝擊或高溫高濕條件等具有高耐受性,且即使在嚴酷的環境下亦難以產生龜裂的硬化物。The curable composition of the present invention can form a cured product which is highly resistant to thermal shock or high-temperature and high-humidity conditions and which is less likely to be cracked even in a severe environment.

因此,以由該硬化性組成物而得的硬化物包覆半導體發光元件而得的光半導體裝置成為可靠性優異的光半導體裝置。Therefore, the optical semiconductor device obtained by coating the semiconductor light-emitting device with the cured product obtained from the curable composition is an optical semiconductor device excellent in reliability.

1‧‧‧光半導體裝置1‧‧‧Optical semiconductor device

2‧‧‧半導體發光元件2‧‧‧Semiconductor light-emitting elements

3‧‧‧反射器3‧‧‧ reflector

4‧‧‧密封材4‧‧‧ Sealing material

5‧‧‧粒子5‧‧‧ particles

6‧‧‧電極6‧‧‧Electrode

7‧‧‧導線7‧‧‧Wire

圖1是表示光半導體裝置的一具體例之模式圖。FIG. 1 is a schematic view showing a specific example of an optical semiconductor device.

<硬化性組成物><Sclerosing composition>

本發明的硬化性組成物含有下述式(1)所表示的化合物(A)、下述化學式(2)所表示的聚矽氧烷(B)、以及矽氫化反應用觸媒(C)。The curable composition of the present invention contains the compound (A) represented by the following formula (1), the polyoxyalkylene (B) represented by the following chemical formula (2), and the catalyst (C) for hydrogenation reaction.

(式中,n表示1以上之整數。R1 以及R2 表示碳數為1~4之烷基。Ar表示芳基。)(wherein, n represents an integer of 1 or more. R 1 and R 2 represent an alkyl group having 1 to 4 carbon atoms. Ar represents an aryl group.)

[化2](R3 3 SiO1/2 )a (R4 2 SiO2/2 )b (R5 2 SiO2/2 )c (R6 SiO3/2 )d (SiO4/2 )e (XO1/2 )f (2)(R 3 3 SiO 1/2 ) a (R 4 2 SiO 2/2 ) b (R 5 2 SiO 2/2 ) c (R 6 SiO 3/2 ) d (SiO 4/2 ) e (XO 1/2 ) f (2)

(R3 、R5 以及R6 分別獨立地表示有機基。其中,所有R3 以及R6 中的至少2個是烯基,R5 在此R5 所鍵結的矽原子上鍵結的另1個R5 為芳基時,並非碳數為1~4之烷基以及芳基。R4 分別獨立地表示碳數為1~4之烷基或芳基,R4 中的至少1個表示芳基。X表示氫原 子或碳數為1~3之烷基。a、c、e以及f分別獨立地表示0以上之整數。b以及d分別獨立地表示1以上之整數。其中,在a為0時,d為2以上之整數。)(R 3, R 5 and R 6 each independently represent an organic group wherein all of R 3, and R is at least two 6 is an alkenyl group, R 5 on the silicon atoms of R 5 are bonded bonded to another When one R 5 is an aryl group, it is not an alkyl group having 1 to 4 carbon atoms and an aryl group. R 4 each independently represents an alkyl group or an aryl group having 1 to 4 carbon atoms, and at least one of R 4 represents An aryl group. X represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and a, c, e, and f each independently represent an integer of 0 or more. b and d each independently represent an integer of 1 or more. When it is 0, d is an integer of 2 or more.)

另外,在本發明中,所謂「聚矽氧烷」是表示具有鍵結有2個以上矽氧烷單元(Si-O)的分子骨架的矽氧烷。In the present invention, the term "polyoxyalkylene oxide" means a siloxane having a molecular skeleton in which two or more siloxane units (Si-O) are bonded.

化合物(A)Compound (A)

化合物(A)是上述式(1)所表示的化合物。化合物(A)是直鏈狀的聚矽氧烷,每1分子中具有2個與矽原子鍵結的氫原子。與矽原子鍵結的氫原子存在於分子之兩末端的矽氧烷單元中。化合物(A)是對於聚矽氧烷(B)之交聯劑,藉由與聚矽氧烷(B)之矽氫化反應而生成硬化物。The compound (A) is a compound represented by the above formula (1). The compound (A) is a linear polyoxyalkylene having two hydrogen atoms bonded to a ruthenium atom per molecule. Hydrogen atoms bonded to the ruthenium atom are present in the oxoxane unit at both ends of the molecule. The compound (A) is a crosslinking agent for polyoxyalkylene (B), which is formed by hydrogenation reaction with polyfluorene oxide (B) to form a cured product.

R1 以及R2 表示碳數為1~4之烷基。亦即,化合物(A)是具有1個以上D單元之矽氧烷單元的氫矽氧烷,所述D單元之矽氧烷單元在矽原子上鍵結有芳基與碳數為1~4之烷基。此種具有D單元的矽氧烷單元的化合物(A)與含有具有2個芳基的D單元的矽氧烷單元的氫矽氧烷、或含有具有2個烷基的D單元的矽氧烷單元的氫矽氧烷相比而言,結晶性低。因此,由併用化合物(A)與下述聚矽氧烷(B)而得的硬化性組成物所得的硬化物成為部分性柔軟的結構,對熱衝擊等具有高耐受性,變得難以產生龜裂。R 1 and R 2 represent an alkyl group having 1 to 4 carbon atoms. That is, the compound (A) is a hydroquinone having one or more D units of a decane unit having a aryl group bonded to a ruthenium atom and having a carbon number of 1 to 4 Alkyl group. a compound (A) having such a D unit of a oxoxane unit and a hydroquinone having a siloxane unit having a D unit having 2 aryl groups, or a decane having a D unit having 2 alkyl groups The unit has a low crystallinity compared to the hydroquinone. Therefore, the cured product obtained by using the curable composition obtained by using the compound (A) and the polysiloxane (B) described above has a partially soft structure, and has high resistance to thermal shock or the like, and is difficult to produce. Cracked.

碳數為1~4之烷基可列舉甲基、乙基、正丙基、異丙基、正丁基、第二丁基、異丁基以及第三丁基等,該些中較佳的是甲基。The alkyl group having 1 to 4 carbon atoms may, for example, be a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, a second butyl group, an isobutyl group or a t-butyl group. It is a methyl group.

芳基可列舉苯基、甲苯基等芳香族烴基,噻吩基、吡啶基 等雜芳基。而且亦可為前文所列舉的苯基等基的氫原子被取代為鹵素原子或烷基等基而成的基。式(1)中的n為2以上之整數的情況下,式(1)中所存在之n個Ar可相互為同種之芳基,亦可為不同種之芳基。Examples of the aryl group include an aromatic hydrocarbon group such as a phenyl group or a tolyl group, a thienyl group and a pyridyl group. Isoheteroaryl. Further, the hydrogen atom of the group such as a phenyl group as exemplified above may be substituted with a group such as a halogen atom or an alkyl group. When n in the formula (1) is an integer of 2 or more, the n Ar groups present in the formula (1) may be the same kind of aryl groups, or may be different kinds of aryl groups.

上述式(1)中,n表示1以上之整數,較佳的是1~3之整數。In the above formula (1), n represents an integer of 1 or more, and preferably an integer of 1 to 3.

化合物(A)例如可藉由以公知之方法使甲基苯基二甲氧基矽烷、二苯基二甲氧基矽烷等烷氧基矽烷與1,1,3,3-四甲基二矽氧烷等氫矽氧烷進行反應而獲得。The compound (A) can be, for example, alkoxydecane such as methylphenyldimethoxydecane or diphenyldimethoxydecane, and 1,1,3,3-tetramethyldifluoride by a known method. It is obtained by reacting hydroquinone such as oxyalkylene.

作為本發明的硬化性組成物中的化合物(A)的含量,較佳的是化合物(A)中的與矽原子鍵結的氫原子量相對於聚矽氧烷(B)中的烯基量的莫耳比成為0.1~5的量,更佳的是0.5~2,進一步更佳的是成為0.7~1.4的量。若化合物(A)的含量為所述範圍內,則變得容易形成對熱衝擊等具有高耐受性、難以生成龜裂的硬化物,而且組成物的硬化充分地進行。The content of the compound (A) in the curable composition of the present invention is preferably such that the amount of hydrogen atoms bonded to the ruthenium atom in the compound (A) is relative to the amount of the alkenyl group in the polysiloxane (B). The molar ratio is 0.1 to 5, more preferably 0.5 to 2, and even more preferably 0.7 to 1.4. When the content of the compound (A) is within the above range, it is easy to form a cured product which is highly resistant to thermal shock or the like and which is less likely to generate cracks, and the hardening of the composition proceeds sufficiently.

聚矽氧烷(B)Polyoxane (B)

聚矽氧烷(B)是上述式(2)所表示的聚矽氧烷。聚矽氧烷(B)是本組成物的主成分,藉由與化合物(A)之矽氫化反應而硬化,成為硬化物之主體。The polyoxyalkylene (B) is a polyoxyalkylene represented by the above formula (2). The polyoxyalkylene (B) is a main component of the present composition, and is hardened by hydrogenation reaction with the compound (A) to become a main component of the cured product.

上述式(2)中,R3 、R5 以及R6 分別獨立地表示有機基。1個矽氧烷單元中所含之3個R3 可為分別不同之有機基,亦可為2個是相同之有機基、剩餘的1個是與其不同之有機基,亦可為3個均相同 之有機基。而且,於a為2以上之整數之情形時,包含R3 之多個矽氧烷單元可分別相同,亦可分別不同,亦可多個中的一部分相同、其他部分與其不同。於1個矽氧烷單元中所含之2個R5 可為分別不同之有機基,亦可為相同之有機基。而且,於c為2以上之整數之情形時,包含R5 之多個矽氧烷單元可分別相同,亦可分別不同,亦可多個中的一部分相同、其他部分與其不同。於d為2以上之整數之情形時,包含R6 之多個矽氧烷單元可分別相同,亦可分別不同,亦可多個中的一部分相同、其他部分與其不同。In the above formula (2), R 3 , R 5 and R 6 each independently represent an organic group. The three R 3 contained in one oxoxane unit may be different organic groups, or two of them may be the same organic group, and the remaining one may be an organic group different therefrom, or may be three The same organic base. Further, when a is an integer of 2 or more, the plurality of siloxane oxide units including R 3 may be the same or different, or a part of the plurality may be the same or different from the other portions. The two R 5 contained in one oxoxane unit may be different organic groups or may be the same organic group. Further, when c is an integer of 2 or more, the plurality of siloxane units including R 5 may be the same or different, or a part of the plurality may be the same or different from the other portions. In the case where d is an integer of 2 or more, the plurality of oxane units including R 6 may be the same or different, or a part of the plurality may be the same or different from the other portions.

所述有機基可列舉烷基、烯基、芳基等。Examples of the organic group include an alkyl group, an alkenyl group, an aryl group and the like.

烷基較佳的是碳數為1~4之烷基,可列舉甲基、乙基、正丙基、異丙基、正丁基、第二丁基、異丁基以及第三丁基等,該些中較佳的是甲基。The alkyl group is preferably an alkyl group having 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, a second butyl group, an isobutyl group, and a t-butyl group. Preferred among these are methyl groups.

烯基例如可列舉乙烯基、烯丙基、丙烯基、異丙烯基、丁烯基、異丁烯基、戊烯基、庚烯基、己烯基以及環己烯基等。該些中較佳的是乙烯基、烯丙基以及己烯基。Examples of the alkenyl group include a vinyl group, an allyl group, a propenyl group, an isopropenyl group, a butenyl group, an isobutenyl group, a pentenyl group, a heptenyl group, a hexenyl group, and a cyclohexenyl group. Preferred among these are vinyl, allyl and hexenyl.

芳基例如可列舉苯基、甲苯基、二甲苯基、萘基等,該些中較佳的是苯基。Examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, a naphthyl group and the like, and among these, a phenyl group is preferred.

所述有機基亦可為包含環氧基之基。聚矽氧烷(B)若具有包含環氧基之基作為有機基,則難以阻礙於使硬化性組成物硬化時所產生之矽氫化反應,可形成對基板或金屬配線等之接著性高的硬化物。所述具有環氧基之基例如可列舉:縮水甘油氧基,3-縮水甘油氧基丙基等縮水甘油氧基烷基,以及3,4-環氧環戊基、3,4-環氧環己基、 2-(3,4-環氧環戊基)乙基、以及2-(3,4-環氧環己基)乙基等環氧環烷基等。The organic group may also be a group containing an epoxy group. When the polyoxyalkylene (B) has a group containing an epoxy group as an organic group, it is difficult to prevent the hydrogenation reaction which occurs when the curable composition is cured, and it is possible to form a high adhesion to a substrate or a metal wiring or the like. Hardened material. Examples of the group having an epoxy group include glycidyloxy group such as glycidoxy group, 3-glycidoxypropyl group, and 3,4-epoxycyclopentyl group and 3,4-epoxy group. Cyclohexyl, An epoxycycloalkyl group such as 2-(3,4-epoxycyclopentyl)ethyl or 2-(3,4-epoxycyclohexyl)ethyl.

其中,1分子中所含之所有R3 以及R6 中的至少2個為烯基,較佳的是2個~4個為烯基。亦即,聚矽氧烷(B)在每1分子中具有2個以上烯基。亦可R3 中的2個以上具有烯基,R6 均為烯基以外之基;亦可R3 均為烯基以外之基,R6 中的2個以上為烯基;亦可R3 中的1個以上具有烯基,R6 中的1個以上為烯基。Among them, at least two of R 3 and R 6 contained in one molecule are alkenyl groups, and preferably two to four are alkenyl groups. That is, the polyoxyalkylene (B) has two or more alkenyl groups per molecule. R 2 or more may have a group other than an alkenyl group 3, R 6 are alkylene group; R 3 may also be groups other than the alkenyl group are, of R 6 2 or more alkenyl group; R 3 may One or more of them have an alkenyl group, and one or more of R 6 are an alkenyl group.

而且,R5 在此R5 所鍵結的矽原子上鍵結的另1個R5 為芳基時,並非碳數為1~4之烷基以及芳基。亦即,包含R5 之矽氧烷單元與包含R4 之矽氧烷單元並不相同。Also, R 5 in the silicon atoms of R 5 are bonded bonded to another R 5 is an aryl group, not carbon atoms of the alkyl group having 1 to 4 and an aryl group. I.e., R 5 comprises silicon of siloxane units containing silicon siloxane units R 4 is not the same.

上述式(2)中,1個矽氧烷單元中所含之2個R4 分別獨立地表示碳數為1~4之烷基或芳基,R4 中之至少1個表示芳基。於b為2以上之整數之情形時,包含R4 之多個矽氧烷單元可分別相同,亦可分別不同,亦可多個中的一部分相同、其他部分與其不同。亦即,聚矽氧烷(B)僅僅具有1個以上於矽原子上鍵結有芳基與碳數為1~4之烷基的D單元作為包含R4 之矽氧烷單元;或者僅僅具有1個以上於矽原子上鍵結有2個芳基之D單元作為包含R4 之矽氧烷單元;或者具有1個以上於矽原子上鍵結有芳基與碳數為1~4之烷基之D單元、且具有1個以上於矽原子上鍵結有2個芳基之D單元作為包含R4 之矽氧烷單元。藉由將此種具有D單元之矽氧烷單元的聚矽氧烷(B)與上述化合物(A)併用,可獲得可形成對熱衝擊等具有高耐受性、難以產生龜裂之硬化物的硬化性組成物。In the above formula (2), two R 4 contained in one oxoxane unit each independently represent an alkyl group or an aryl group having 1 to 4 carbon atoms, and at least one of R 4 represents an aryl group. In the case where b is an integer of 2 or more, the plurality of siloxane oxide units including R 4 may be the same or different, or a part of the plurality may be the same or different from the other portions. That is, the polyoxyalkylene (B) has only one or more D units having an aryl group and an alkyl group having 1 to 4 carbon atoms bonded to a ruthenium atom as a arsonane unit containing R 4 ; One or more D units having two aryl groups bonded to a ruthenium atom as a arsonane unit containing R 4 ; or one or more aryl groups bonded to a ruthenium atom and an alkane having a carbon number of 1 to 4 A D unit having a D unit and having one or more aryl groups bonded to a ruthenium atom as a fluorene unit containing R 4 . By using such a polyoxyalkylene (B) having a D unit of a siloxane unit in combination with the above compound (A), it is possible to obtain a cured product which is highly resistant to thermal shock and is hard to be cracked. The hardening composition.

而且,若R4 為芳基,亦即聚矽氧烷(B)僅僅具有於矽原子上鍵結有2個芳基之D單元作為包含R4 的矽氧烷單元,則於可形成難以產生龜裂、另外對水蒸氣之氣體阻隔性高的硬化物之方面而言較佳。Further, if R 4 is an aryl group, that is, the polyoxyalkylene oxide (B) has only a D unit having two aryl groups bonded to a ruthenium atom as a siloxane group containing R 4 , it is difficult to form. The crack is preferable in terms of a cured product having a high gas barrier property to water vapor.

R4 所表示之碳數為1~4之烷基可列舉甲基、乙基、正丙基、異丙基、正丁基、第二丁基、異丁基以及第三丁基等,該些中特佳的是甲基。Examples of the alkyl group having 1 to 4 carbon atoms represented by R 4 include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, a second butyl group, an isobutyl group, and a t-butyl group. Some of the best ones are methyl groups.

R4 所表示之芳基可列舉苯基、甲苯基、二甲苯基、萘基等,該些中特佳的是苯基。Examples of the aryl group represented by R 4 include a phenyl group, a tolyl group, a xylyl group, a naphthyl group and the like, and among these, a phenyl group is particularly preferred.

X表示氫原子或碳數為1~3之烷基。X represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.

a、c、e以及f分別獨立地表示0以上之整數。b以及d分別獨立地表示1以上之整數。其中,於a為0時,d為2以上之整數。由於d為1以上之整數,因此聚矽氧烷(B)一定具有T單元之矽氧烷單元,因此具有分支結構。即使將不具分支結構之聚矽氧烷與化合物(A)併用而製作組成物,則組成物亦難以硬化。而且,即使於該組成物硬化之情形時,所得之硬化物亦不具有耐龜裂性。a, c, e, and f each independently represent an integer of 0 or more. b and d each independently represent an integer of 1 or more. Wherein, when a is 0, d is an integer of 2 or more. Since d is an integer of 1 or more, the polyoxyalkylene (B) necessarily has a T unit of a decane unit, and thus has a branched structure. Even if a polysiloxane having no branched structure is used in combination with the compound (A) to form a composition, the composition is hard to be hardened. Moreover, even in the case where the composition is hardened, the obtained cured product does not have crack resistance.

a較佳的是0~5,更佳的是1~3。b較佳的是1~5,更佳的是1~3。c較佳的是0~3,更佳的是0~1。d較佳的是1~9,更佳的是4~7。e較佳的是0~5,更佳的是0~1。a is preferably 0 to 5, more preferably 1 to 3. b is preferably 1 to 5, more preferably 1 to 3. c is preferably 0 to 3, more preferably 0 to 1. d is preferably 1 to 9, more preferably 4 to 7. e is preferably 0 to 5, more preferably 0 to 1.

作為本發明的硬化性組成物中所含之聚矽氧烷(B)之含量,於將本組成物中所含之(A)成分、(B)成分以及(C)成分之合計設為100質量%時,較佳的是30質量%~95質量%,更佳的是40 質量%~90質量%,進一步更佳的是50質量%~80質量%。若聚矽氧烷(B)之含量為所述範圍內,則變得容易形成對熱衝擊等具有高耐受性、難以產生龜裂之硬化物,且組成物之硬化充分地進行。The content of the polyoxane (B) contained in the curable composition of the present invention is set to 100 in total of the components (A), (B) and (C) contained in the composition. When the mass is %, it is preferably 30% by mass to 95% by mass, more preferably 40% by mass. The mass % to 90% by mass, and more preferably 50% by mass to 80% by mass. When the content of the polyoxyalkylene (B) is within the above range, it is easy to form a cured product which is highly resistant to thermal shock or the like and which is less likely to cause cracks, and the hardening of the composition is sufficiently performed.

聚矽氧烷(B)的藉由凝膠滲透層析法而測定的聚苯乙烯換算之重量平均分子量較佳的是處於100~50000之範圍,更佳的是處於500~5000之範圍。凝膠滲透層析法之測定條件之詳細如實施例所記載那樣。若聚矽氧烷(B)之重量平均分子量處於所述範圍內,則使用本組成物而製造密封材時容易操作,且由本組成物所得之硬化物具有作為光半導體密封材而言充分之材料強度以及特性。The polystyrene-equivalent weight average molecular weight of the polyoxyalkylene (B) measured by gel permeation chromatography is preferably in the range of from 100 to 50,000, more preferably in the range of from 500 to 5,000. The details of the measurement conditions of the gel permeation chromatography are as described in the examples. When the weight average molecular weight of the polyoxyalkylene (B) is within the above range, it is easy to handle when the sealing material is produced by using the composition, and the cured product obtained from the composition has a sufficient material as an optical semiconductor sealing material. Strength and characteristics.

聚矽氧烷(B)之製造方法可列舉日本專利特開平6-9659號公報、日本專利特開2003-183582號公報、日本專利特開2007-008996號公報、日本專利特開2007-106798號公報、日本專利特開2007-169427號公報以及日本專利特開2010-059359號公報等中所記載之公知的方法,例如使成為各單元源之氯矽烷或烷氧基矽烷共水解的方法、或藉由鹼金屬觸媒等對共水解物進行平衡化反應的方法等。The manufacturing method of the polyoxyalkylene (B) is exemplified by Japanese Patent Laid-Open No. Hei 6-9659, Japanese Patent Laid-Open Publication No. 2003-183582, Japanese Patent Laid-Open No. 2007-008996, and Japanese Patent Laid-Open No. 2007-106798. A known method described in, for example, Japanese Patent Publication No. 2007-169427, and Japanese Patent Laid-Open Publication No. 2010-059359, for example, a method of co-hydrolysis of chlorodecane or alkoxy decane which is a source of each unit, or A method of performing a balanced reaction of a co-hydrolyzate by an alkali metal catalyst or the like.

矽氫化反應用觸媒(C)矽Hydrogenation catalyst (C)

矽氫化反應用觸媒(C)是化合物(A)與聚矽氧烷(B)之矽氫化反應的觸媒。The catalyst (C) for the hydrogenation reaction is a catalyst for the hydrogenation reaction of the compound (A) with the polyoxyalkylene (B).

作為矽氫化反應用觸媒(C),若為現有的於氫矽烷基系聚矽氧烷組成物中用作矽氫化反應用觸媒之觸媒,則可並無特別限制地使用。The catalyst (C) for the hydrogenation reaction is not particularly limited as long as it is used as a catalyst for the hydrogenation reaction catalyst in the composition of the hydroquinone alkyl polysiloxane.

矽氫化反應用觸媒(C)的具體例可列舉鉑系觸媒、銠系觸 媒、鈀系觸媒。自促進本組成物之硬化的觀點考慮,該些中較佳的是鉑系觸媒。鉑系觸媒例如可列舉鉑-烯基矽氧烷錯合物等。烯基矽氧烷例如可列舉1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷等。特別是自錯合物之穩定性的觀點考慮,較佳的是1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷。Specific examples of the catalyst (C) for hydrogenation reaction include platinum-based catalysts and rhodium-based catalysts. Medium, palladium system catalyst. From the viewpoint of promoting the hardening of the composition, preferred among these are platinum-based catalysts. Examples of the platinum-based catalyst include a platinum-alkenyl alkoxylate complex and the like. Examples of the alkenyl oxirane include 1,3-divinyl-1,1,3,3-tetramethyldioxane and 1,3,5,7-tetramethyl-1,3,5. 7-tetravinylcyclotetraoxane, and the like. Particularly, from the viewpoint of the stability of the self-aligned compound, 1,3-divinyl-1,1,3,3-tetramethyldioxane is preferred.

本發明的硬化性組成物中的矽氫化反應用觸媒(C)的含量是實際上進行化合物(A)與聚矽氧烷(B)之矽氫化反應的量。The content of the catalyst (C) for the hydrogenation reaction in the hardenable composition of the present invention is an amount in which the hydrogenation reaction of the compound (A) with the polyoxyalkylene (B) is actually carried out.

本發明的硬化性組成物只要可達成本發明的目的,則除了所述成分以外亦可視需要而含有例如燒製二氧化矽、石英粉末等微粒子狀二氧化矽,氧化鈦、氧化鋅等無機填充劑,環四甲基四乙烯基四矽氧烷等延遲劑,二苯基雙(二甲基乙烯基矽烷氧基)矽烷、苯基三(二甲基乙烯基矽烷氧基)矽烷等稀釋劑,螢光體、顏料、阻燃劑、耐熱劑、抗氧化劑等。In addition to the above-mentioned components, the curable composition of the present invention may contain, for example, finely divided cerium oxide such as fired cerium oxide or quartz powder, or inorganic filler such as titanium oxide or zinc oxide. a retarder such as cyclotetramethyltetravinyltetraoxane, a diluent such as diphenyl bis(dimethylvinyl decyloxy) decane or phenyl tris(dimethylvinyl decyloxy) decane , phosphors, pigments, flame retardants, heat-resistant agents, antioxidants, etc.

本發明的硬化性組成物可藉由如下方式而調製:藉由混合機等公知方法將所述各成分均一地混合。The curable composition of the present invention can be prepared by uniformly mixing the components by a known method such as a mixer.

本發明的硬化性組成物於25℃下之黏度較佳的是1 mPa.s~1000000 mPa.s,更佳的是10 mPa.s~10000 mPa.s。若黏度為該範圍內,則本組成物之操作性提高。The viscosity of the curable composition of the present invention at 25 ° C is preferably 1 mPa. s~1000000 mPa. s, more preferably 10 mPa. s~10000 mPa. s. When the viscosity is within this range, the workability of the composition is improved.

本發明的硬化性組成物可調製為1液,亦可分開調製為2液,於使用時將2液混合而使用。亦可視需要添加少量乙炔醇等硬化抑制劑。The curable composition of the present invention can be prepared into one liquid, or can be separately prepared into two liquids, and the two liquids can be used in combination at the time of use. A small amount of a hardening inhibitor such as acetylene alcohol may also be added as needed.

<硬化物><hardened matter>

藉由使本發明的硬化性組成物硬化而獲得硬化物。若藉由本發明的硬化性組成物對半導體元件進行密封,使其硬化,則獲得作為密封材之硬化物。The cured product is obtained by curing the curable composition of the present invention. When the semiconductor element is sealed and hardened by the curable composition of the present invention, a cured product as a sealing material is obtained.

作為使本發明的硬化性組成物硬化的方法例如可列舉:將硬化性組成物塗佈於基板上之後,於100℃~180℃下進行1小時~13小時之加熱的方法等。The method of curing the curable composition of the present invention is, for example, a method in which the curable composition is applied onto a substrate, and then heated at 100 ° C to 180 ° C for 1 hour to 13 hours.

如上所述,將本發明的硬化性組成物硬化而所得的硬化物對熱衝擊等具有高耐受性,且即使在嚴酷的環境下亦難以產生龜裂。As described above, the cured product obtained by curing the curable composition of the present invention has high resistance to thermal shock or the like, and is unlikely to be cracked even in a severe environment.

<光半導體裝置><Optical semiconductor device>

本發明的光半導體裝置包含所述硬化性組成物硬化而得的硬化物。例如,本發明的光半導體裝置包含:半導體發光元件、包覆該半導體發光元件之所述硬化物。本發明的光半導體裝置可藉由如下方式而獲得:於半導體發光元件上包覆所述硬化性組成物,使該組成物硬化。使硬化性組成物硬化的方法如上所述。The optical semiconductor device of the present invention contains a cured product obtained by curing the curable composition. For example, the optical semiconductor device of the present invention includes a semiconductor light emitting element and the cured material covering the semiconductor light emitting element. The optical semiconductor device of the present invention can be obtained by coating the curable composition on a semiconductor light-emitting device to harden the composition. The method of hardening the curable composition is as described above.

光半導體裝置可列舉發光二極體(Light Emitting Diode、LED)以及雷射二極體(Laser Diode、LD)等。Examples of the optical semiconductor device include a light emitting diode (LED), a laser diode (LD), and the like.

圖1是本發明的光半導體裝置之一具體例的模式圖。光半導體裝置1包含:電極6,為銀電極等;半導體發光元件2,設於電極6上,藉由導線7而與電極6電性連接;反射器3,以收容半導體發光元件2之方式進行配置;密封材4,填充於反射器3內,對半導體發光元件2進行密封。密封材4包含使本發明的硬化性組成物硬化而得的硬化物。密封材4中分散有二氧化矽或螢光體等粒子5。Fig. 1 is a schematic view showing a specific example of an optical semiconductor device of the present invention. The optical semiconductor device 1 includes an electrode 6 which is a silver electrode or the like, a semiconductor light-emitting element 2 which is provided on the electrode 6, and is electrically connected to the electrode 6 via a wire 7; and the reflector 3 is provided to house the semiconductor light-emitting device 2 The sealing member 4 is filled in the reflector 3 to seal the semiconductor light emitting element 2. The sealing material 4 contains a cured product obtained by curing the curable composition of the present invention. Particles 5 such as cerium oxide or a phosphor are dispersed in the sealing material 4.

如上所述,使本發明的硬化性組成物硬化而得之硬化物即使在嚴酷之環境下亦難以產生龜裂,因此具有所述硬化物作為密封材之光半導體裝置即使在施加熱衝擊之條件下或高溫高濕條件下等亦可使用。As described above, the cured product obtained by curing the curable composition of the present invention is hard to be cracked even in a severe environment, and therefore the optical semiconductor device having the cured product as a sealing material is subjected to thermal shock conditions. It can also be used under low temperature or high humidity conditions.

[實施例][Examples] 1.硬化性組成物之準備1. Preparation of hardenable composition

1-1.結構分析1-1. Structural analysis

所合成之化合物之結構可藉由29 Si NMR以及13 C NMR而算出。The structure of the synthesized compound can be calculated by 29 Si NMR and 13 C NMR.

1-2.重量平均分子量1-2. Weight average molecular weight

重量平均分子量(Mw)是藉由凝膠滲透層析法(GPC),於下述條件下進行測定,而且作為聚苯乙烯換算值而求出。The weight average molecular weight (Mw) was measured by gel permeation chromatography (GPC) under the following conditions, and was determined as a polystyrene-converted value.

裝置:HLC-8120C(東曹公司製造)Device: HLC-8120C (manufactured by Tosoh Corporation)

管柱:TSK-gel MultiporeHXL-M(東曹公司製造)Column: TSK-gel MultiporeHXL-M (made by Tosoh Corporation)

溶離液:THF、流量為0.5 mL/min、負載量為5.0%、100 μLDissolution: THF, flow rate 0.5 mL/min, loading 5.0%, 100 μL

1-3.各成分之合成1-3. Synthesis of each component

以下所列舉之矽氧烷單元以如下所示的符號表示。The oxoxane units listed below are represented by the symbols shown below.

M(Vi):(ViMe2 SiO1/2 )M(Vi): (ViMe 2 SiO 1/2 )

D(MePh):(MePhSiO2/2 )D(MePh): (MePhSiO 2/2 )

D(MeEp):(MeEpSiO2/2 )D(MeEp): (MeEpSiO 2/2 )

D(Ph):(Ph2 SiO2/2 )D(Ph): (Ph 2 SiO 2/2 )

T(Ph):(PhSiO3/2 )T(Ph): (PhSiO 3/2 )

(Me表示甲基,Ph表示苯基,Vi表示乙烯基,Ep表示環氧3-縮水甘油氧基丙基。)(Me represents a methyl group, Ph represents a phenyl group, Vi represents a vinyl group, and Ep represents an epoxy 3-glycidoxypropyl group.)

[合成例1]化合物(A1)之合成[Synthesis Example 1] Synthesis of Compound (A1)

於反應釜中放入甲基苯基二甲氧基矽烷455 g、三氟甲磺酸0.1 g、1,1,3,3-四甲基二矽氧烷336 g,其次添加乙酸180 g後,於50℃下進行3小時之反應。反應結束後,使用甲苯與水進行分液萃取,獲得下述所表示的化合物(A1)。Put 455 g of methylphenyldimethoxydecane, 0.1 g of trifluoromethanesulfonic acid, 336 g of 1,1,3,3-tetramethyldioxane in the reaction kettle, followed by adding 180 g of acetic acid. The reaction was carried out at 50 ° C for 3 hours. After completion of the reaction, liquid separation extraction was carried out using toluene and water to obtain the compound (A1) shown below.

[合成例2]化合物(A2)之合成[Synthesis Example 2] Synthesis of Compound (A2)

於反應釜中放入甲基苯基二甲氧基矽烷300 g、三氟甲磺酸0.1 g、1,1,3,3-四甲基二矽氧烷450 g,其次添加乙酸100 g後,於50℃下進行3小時之反應。反應結束後,使用甲苯與水進行分液萃取,獲得下述所表示的化合物(A2)。300 g of methylphenyldimethoxydecane, 0.1 g of trifluoromethanesulfonic acid and 450 g of 1,1,3,3-tetramethyldioxane were placed in the reaction vessel, followed by the addition of 100 g of acetic acid. The reaction was carried out at 50 ° C for 3 hours. After completion of the reaction, liquid separation extraction was carried out using toluene and water to obtain the compound (A2) shown below.

[化4] [Chemical 4]

[合成例3]化合物(A3)之合成[Synthesis Example 3] Synthesis of Compound (A3)

於反應釜中放入甲基苯基二甲氧基矽烷656 g、三氟甲磺酸0.1 g、1,1,3,3-四甲基二矽氧烷188 g,其次添加乙酸280 g後,於50℃下進行3小時之反應。反應結束後,使用甲苯與水進行分液萃取,獲得下述所表示的化合物(A3)。656 g of methylphenyldimethoxydecane, 0.1 g of trifluoromethanesulfonic acid, and 188 g of 1,1,3,3-tetramethyldioxane were placed in the reaction vessel, followed by the addition of 280 g of acetic acid. The reaction was carried out at 50 ° C for 3 hours. After completion of the reaction, liquid separation extraction was carried out using toluene and water to obtain the compound (A3) shown below.

[合成例4]化合物(D1)之合成[Synthesis Example 4] Synthesis of Compound (D1)

於反應釜中放入二苯基二甲氧基矽烷403 g、三氟甲磺酸0.1 g、1,1,3,3-四甲基二矽氧烷450 g,其次添加乙酸130 g後,於50℃下進行3小時之反應。反應結束後,使用甲苯與水進行分液萃取,獲得下述所表示的化合物(D1)。Put 403 g of diphenyldimethoxydecane, 0.1 g of trifluoromethanesulfonic acid, 450 g of 1,1,3,3-tetramethyldioxane in the reaction vessel, and then add 130 g of acetic acid. The reaction was carried out at 50 ° C for 3 hours. After completion of the reaction, liquid separation extraction was carried out using toluene and water to obtain the compound (D1) shown below.

[化6] [Chemical 6]

[合成例5]化合物(D2)之合成[Synthesis Example 5] Synthesis of Compound (D2)

於反應釜中放入二苯基二甲氧基矽烷403 g、二甲氧基二甲基矽氧烷40 g、三氟甲磺酸0.1 g、1,1,3,3-四甲基二矽氧烷450 g,其次添加乙酸130 g後,於50℃下進行3小時之反應。反應結束後,使用甲苯與水進行分液萃取,獲得下述所表示的化合物(D2)。Put 403 g of diphenyldimethoxydecane, 40 g of dimethoxydimethyloxane, 0.1 g of trifluoromethanesulfonate, 1,1,3,3-tetramethyldi in the reaction kettle. 450 g of decane, followed by addition of 130 g of acetic acid, was carried out at 50 ° C for 3 hours. After completion of the reaction, liquid separation extraction was carried out using toluene and water to obtain the compound (D2) shown below.

[合成例6]聚矽氧烷(B1)之合成[Synthesis Example 6] Synthesis of polyoxyalkylene (B1)

於反應釜中放入1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷186 g、苯基三甲氧基矽烷594 g、甲基苯基二甲氧基矽烷182 g、水180 g、三氟甲磺酸0.8 g以及甲苯650 g,進行1小時之加熱回流。其次,加入3-縮水甘油氧基丙基甲基二甲氧基矽烷1 g與氫氧化鉀0.6 g,進行 5小時之加熱回流。藉由酸加以中和後,進行水洗,獲得相對於M(Vi)20 mol而言包含T(Ph)60 mol、D(MePh)20 mol以及D(MeEp)0.1 mol之聚矽氧烷(B1)。聚矽氧烷(B1)之重量平均分子量為1,400。1,3-divinyl-1,1,3,3-tetramethyldioxane 186 g, phenyltrimethoxydecane 594 g, methylphenyldimethoxydecane were placed in the reaction vessel. 182 g, 180 g of water, 0.8 g of trifluoromethanesulfonic acid, and 650 g of toluene were heated under reflux for 1 hour. Next, 1 g of 3-glycidoxypropylmethyldimethoxydecane and 0.6 g of potassium hydroxide were added. Heated back under 5 hours. After being neutralized by an acid, it is washed with water to obtain a polyoxane (B1) containing T(Ph) 60 mol, D(MePh) 20 mol, and D(MeEp) 0.1 mol relative to M(Vi) 20 mol. ). The polyoxyalkylene (B1) has a weight average molecular weight of 1,400.

[合成例7]聚矽氧烷(B2)之合成[Synthesis Example 7] Synthesis of polyoxyalkylene (B2)

於反應釜中放入1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷186 g、苯基三甲氧基矽烷595 g、二苯基二甲氧基矽烷244 g、水200 g、三氟甲磺酸0.8 g以及甲苯700 g,進行1小時之加熱回流。其次,加入氫氧化鉀0.6 g進行5小時之回流。藉由乙酸加以中和後,進行水洗,獲得相對於M(Vi)20 mol而言包含T(Ph)60 mol以及D(Ph)20 mol的聚矽氧烷(B2)。聚矽氧烷(B2)之重量平均分子量為1,500。1,3-divinyl-1,1,3,3-tetramethyldioxane 186 g, phenyltrimethoxydecane 595 g, diphenyldimethoxydecane 244 were placed in the reaction vessel. g, 200 g of water, 0.8 g of trifluoromethanesulfonic acid and 700 g of toluene were heated under reflux for 1 hour. Next, 0.6 g of potassium hydroxide was added thereto for reflux for 5 hours. After neutralization by acetic acid, water washing was carried out to obtain a polyoxane (B2) containing T(Ph) 60 mol and D(Ph) 20 mol with respect to 20 mol of M(Vi). The polyoxyalkylene (B2) has a weight average molecular weight of 1,500.

[合成例8]聚矽氧烷(D3)之合成[Synthesis Example 8] Synthesis of polyoxyalkylene (D3)

於反應釜中放入二苯基二甲氧基矽烷183 g、三氟甲磺酸0.6 g、1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷140 g,其次添加乙酸40 g後,於50℃下進行3小時之反應。反應結束後,使用甲苯與水進行分液萃取,獲得下述所表示的化合物(D4)。In the reaction vessel, 183 g of diphenyldimethoxydecane, 0.6 g of trifluoromethanesulfonic acid, and 1,3-divinyl-1,1,3,3-tetramethyldioxane 140 g were placed. After the addition of 40 g of acetic acid, the reaction was carried out at 50 ° C for 3 hours. After completion of the reaction, liquid separation extraction was carried out using toluene and water to obtain the compound (D4) shown below.

[合成例9]聚矽氧烷(B3)之合成[Synthesis Example 9] Synthesis of polyoxyalkylene (B3)

於反應釜中加入苯基三甲氧基矽烷149 g、二苯基二甲氧基矽烷183 g、三氟甲磺酸0.6 g、1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷653 g,其次添加乙酸40 g後,於50℃下進行3小時之反應。反應結束後,使用甲苯與水進行分液萃取,獲得相對於M(Vi)70 mol而言包含T(Ph)15 mol以及D(Ph)15 mol的聚矽氧烷(B3)。聚矽氧烷(B3)之重量平均分子量為500。147 g of phenyltrimethoxydecane, 183 g of diphenyldimethoxydecane, 0.6 g of trifluoromethanesulfonic acid, and 1,3-divinyl-1,1,3,3-tetra were added to the reaction vessel. Methyldioxane 653 g, followed by the addition of 40 g of acetic acid, was reacted at 50 ° C for 3 hours. After completion of the reaction, liquid separation extraction was carried out using toluene and water to obtain a polyoxane (B3) containing 15 mol of T(Ph) and 15 mol of D(Ph) relative to M(Vi) 70 mol. The polyoxyalkylene (B3) has a weight average molecular weight of 500.

2.硬化性組成物之調製2. Modulation of hardening composition [實施例1~實施例5以及比較例1~比較例3][Example 1 to Example 5 and Comparative Example 1 to Comparative Example 3]

將下述表1所表示的成分以表1所表示的調配量加以混合,獲得實施例1~實施例5以及比較例1~比較例3之硬化性組成物。表1中之「份」表示質量份。另外,化合物(A)中之與矽原子鍵結的氫原子量相對於聚矽氧烷(B)中之烯基量的莫耳比均為1.05。而且,表1中之各成分之詳細如下所示。The components shown in the following Table 1 were mixed in the amounts shown in Table 1, and the curable compositions of Examples 1 to 5 and Comparative Examples 1 to 3 were obtained. The "parts" in Table 1 represent parts by mass. Further, the molar ratio of the amount of hydrogen atoms bonded to the ruthenium atom in the compound (A) to the amount of the alkenyl group in the polysiloxane (B) was 1.05. Further, the details of the respective components in Table 1 are as follows.

矽氫化反應用觸媒(C1):鉑與1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷之錯合物(鉑金屬量為4質量%)Catalyst for hydrogenation reaction (C1): a complex of platinum and 1,3-divinyl-1,1,3,3-tetramethyldioxane (the amount of platinum metal is 4% by mass)

化合物(D4):環四甲基四乙烯基四矽氧烷Compound (D4): cyclotetramethyltetravinyltetraoxane

化合物(D5):二苯基雙(二甲基乙烯基矽烷氧基)矽烷Compound (D5): diphenyl bis(dimethylvinyl decyloxy) decane

化合物(D6):苯基三(二甲基乙烯基矽烷氧基)矽烷Compound (D6): Phenyltris(dimethylvinylnonyloxy)decane

3.硬化性組成物之評價3. Evaluation of hardening composition

關於實施例1~實施例5以及比較例1~比較例3之硬化性組成物,藉由下述(3-1)~(3-6)之手法進行評價。將評價結果示於表2。The curable compositions of Examples 1 to 5 and Comparative Examples 1 to 3 were evaluated by the following methods (3-1) to (3-6). The evaluation results are shown in Table 2.

3-1.耐熱性3-1. Heat resistance

將所述「2.硬化性組成物之調製」中所得之硬化性組成物塗佈於石英玻璃上之後,於100℃下進行1小時之加熱,其次於150℃下 進行5小時之加熱,於石英玻璃上形成膜厚為1 mm之硬化物。藉由目視觀察將該硬化物於150℃下保管500小時前後之外觀,評價耐熱性。以下述基準進行評價。After applying the curable composition obtained in "2. Preparation of curable composition" to quartz glass, heating was performed at 100 ° C for 1 hour, followed by 150 ° C. Heating for 5 hours was carried out to form a cured product having a film thickness of 1 mm on the quartz glass. The heat resistance was evaluated by visually observing the appearance of the cured product at 150 ° C for about 500 hours. The evaluation was performed on the basis of the following criteria.

A:於保管前後並無顏色變化。A: There is no color change before and after storage.

B:於保管後稍微黃色化。B: Slightly yellow after storage.

C:於保管後明顯黃色化。C: Apparently yellowed after storage.

3-2.高溫高濕試驗後之耐龜裂性3-2. Crack resistance after high temperature and high humidity test

將所述「2.硬化性組成物之調製」中所得之硬化性組成物注入至LED封裝(表面黏著型、俯視型(top view type))中,於100℃下進行1小時之加熱,其次於150℃下進行5小時之加熱,製作10個於LED封裝中形成有硬化物之樣品(以下稱為評價用樣品1)。將所得之評價用樣品1放入至恆溫恆濕槽(愛斯佩克(ESPEC)公司製造、商品名「PL-3KP」)中,於85℃、85%RH之環境下保持8小時後,使用回流焊裝置(千住金屬工業股份有限公司製造、商品名「STR-2010」),於260℃下進行20秒之加熱(高溫高濕試驗)。藉由光學顯微鏡觀察高溫高濕試驗後之硬化物之龜裂之有無,評價高溫高濕試驗後之耐龜裂性。以下述基準進行評價。The curable composition obtained in the "2. Preparation of the curable composition" was injected into an LED package (surface adhesion type, top view type), and heated at 100 ° C for 1 hour, followed by heating. The film was heated at 150 ° C for 5 hours to prepare 10 samples (hereinafter referred to as sample for evaluation 1) in which a cured product was formed in the LED package. The obtained sample for evaluation 1 was placed in a constant temperature and humidity chamber (manufactured by ESPEC, trade name "PL-3KP"), and kept at 85 ° C and 85% RH for 8 hours. Using a reflow soldering apparatus (manufactured by Senju Metal Industry Co., Ltd., trade name "STR-2010"), heating was performed at 260 ° C for 20 seconds (high temperature and high humidity test). The crack resistance of the cured product after the high-temperature and high-humidity test was evaluated by observing the presence or absence of the crack of the cured product after the high-temperature and high-humidity test by an optical microscope. The evaluation was performed on the basis of the following criteria.

A:10個樣品之任意者中均無龜裂。A: No cracks were found in any of the 10 samples.

B:10個樣品中之1個~4個樣品中存在龜裂。B: There is a crack in one to four of the 10 samples.

C:10個樣品中之5個以上樣品中存在龜裂。C: Cracks were present in more than 5 of the 10 samples.

3-3.熱循環試驗後之耐龜裂性3-3. Crack resistance after thermal cycle test

將所述「2.硬化性組成物之調製」中所得之硬化性組成物注 入至LED封裝(表面黏著型、俯視型)中,於100℃下進行1小時之加熱,其次於150℃下進行5小時之加熱,製作10個於LED封裝中形成有硬化物之樣品(以下稱為評價用樣品2)。對所得之評價用樣品2,藉由冷熱衝擊試驗裝置(愛斯佩克(ESPEC)公司製造、商品名「TOM17」)進行500循環之以-40℃~100℃之加熱(加熱速度為1℃/sec)、100℃~-40℃之冷卻(冷卻速度為-1℃/sec)為1個循環的加熱以及冷卻試驗(熱循環試驗)。藉由光學顯微鏡觀察500循環後之硬化物之龜裂之有無,評價熱循環試驗後之耐龜裂性。以下述基準進行評價。The hardenable composition obtained in the "2. Modification of the curable composition" is described. Into the LED package (surface adhesion type, top view type), heating was performed at 100 ° C for 1 hour, followed by heating at 150 ° C for 5 hours, and 10 samples of the cured product formed in the LED package were produced (below It is called sample for evaluation 2). For the obtained evaluation sample 2, heating was performed at -40 ° C to 100 ° C for 500 cycles by a thermal shock test apparatus (manufactured by ESPEC, trade name "TOM 17") (heating rate was 1 ° C) /sec), cooling at 100 ° C to -40 ° C (cooling rate -1 ° C / sec) is a one-cycle heating and cooling test (thermal cycle test). The crack resistance of the cured product after 500 cycles was observed by an optical microscope, and the crack resistance after the heat cycle test was evaluated. The evaluation was performed on the basis of the following criteria.

A:10個樣品之任意者中均無龜裂。A: No cracks were found in any of the 10 samples.

B:10個樣品中之1個~4個樣品中存在龜裂。B: There is a crack in one to four of the 10 samples.

C:10個樣品中之5個以上樣品中存在龜裂。C: Cracks were present in more than 5 of the 10 samples.

3-4.對硫化氫之氣體阻隔性3-4. Gas barrier to hydrogen sulfide

將所述「2.硬化性組成物之調製」中所得之硬化性組成物注入至LED封裝(表面黏著型、俯視型)中,於100℃下進行1小時之加熱,其次於150℃下進行5小時之加熱,製作於LED封裝中形成有硬化物之樣品(以下稱為評價用樣品3)。於充滿包含90 vol%(體積百分比)空氣以及10 vol%硫化氫之氣體的加熱容器內放入評價用樣品3,將評價用樣品3於80℃下進行24小時之加熱。藉由光學顯微鏡觀察加熱前後之評價用樣品3之LED封裝之銀電極之外觀,評價對於硫化氫之氣體阻隔性。以下述基準進行評價。The curable composition obtained in the "2. Preparation of the curable composition" was injected into an LED package (surface adhesion type, plan view type), heated at 100 ° C for 1 hour, and then at 150 ° C. After heating for 5 hours, a sample in which a cured product was formed in the LED package (hereinafter referred to as sample for evaluation 3) was produced. The sample for evaluation 3 was placed in a heating vessel filled with a gas containing 90 vol% (by volume) of air and 10 vol% of hydrogen sulfide, and the sample for evaluation 3 was heated at 80 ° C for 24 hours. The appearance of the silver electrode of the LED package of the sample 3 for evaluation before and after heating was observed by an optical microscope, and the gas barrier property against hydrogen sulfide was evaluated. The evaluation was performed on the basis of the following criteria.

A:於加熱前後並無銀電極之顏色變化。A: There is no color change of the silver electrode before and after heating.

B:於加熱後,銀電極部分稍微黃色化。B: After heating, the silver electrode portion was slightly yellowed.

C:於加熱後,銀電極部分黑色化。C: After heating, the silver electrode portion is blackened.

3-5.對水蒸氣之氣體阻隔性3-5. Gas barrier to water vapor

將所述「2.硬化性組成物之調製」中所得之硬化性組成物塗佈於剝離膜上後,於100℃下進行1小時之加熱,其次於150℃下進行5小時之加熱,將剝離膜剝離,由此而形成膜厚為200 μm之膜狀硬化物。藉由MOCON水蒸氣透過率測定裝置(MOCON公司製造、商品名「PERMATRAN-W3/31」)測定該硬化物之水蒸氣透過量,根據(水蒸氣透過量×膜厚)算出擴散係數,藉此評價對水蒸氣之氣體阻隔性。以下述基準進行評價。The curable composition obtained in the "2. Preparation of a curable composition" is applied onto a release film, and then heated at 100 ° C for 1 hour, followed by heating at 150 ° C for 5 hours. The release film was peeled off, whereby a film-like cured product having a film thickness of 200 μm was formed. The water vapor transmission amount of the cured product is measured by a MOCON water vapor transmission rate measuring device (manufactured by MOCON Corporation, trade name "PERMATRAN-W3/31"), and the diffusion coefficient is calculated from (water vapor transmission amount × film thickness). Evaluation of gas barrier properties to water vapor. The evaluation was performed on the basis of the following criteria.

A:水蒸氣擴散係數不足16。A: The water vapor diffusion coefficient is less than 16.

B:水蒸氣擴散係數為16~20。B: The water vapor diffusion coefficient is 16-20.

C:水蒸氣擴散係數大於20。C: The water vapor diffusion coefficient is greater than 20.

本發明的硬化性組成物可形成對熱衝擊或高溫高濕環境等具有高的耐受性、難以產生龜裂之硬化物,因此可用作光學用半導體 元件以及光半導體構件之密封劑、接著劑、灌封劑、保護塗佈劑、底部填充劑等。The curable composition of the present invention can form a cured product which is highly resistant to thermal shock or high-temperature and high-humidity environments and which is less likely to cause cracks, and thus can be used as an optical semiconductor. A sealing agent, an adhesive, a potting agent, a protective coating agent, an underfill, and the like of the element and the optical semiconductor member.

1‧‧‧光半導體裝置1‧‧‧Optical semiconductor device

2‧‧‧半導體發光元件2‧‧‧Semiconductor light-emitting elements

3‧‧‧反射器3‧‧‧ reflector

4‧‧‧密封材4‧‧‧ Sealing material

5‧‧‧粒子5‧‧‧ particles

6‧‧‧電極6‧‧‧Electrode

7‧‧‧導線7‧‧‧Wire

Claims (4)

一種硬化性組成物,其特徵在於含有:下述式(1)所表示的化合物(A)、下述化學式(2)所表示的聚矽氧烷(B)、以及矽氫化反應用觸媒(C), (式中,n表示1以上之整數;R1 以及R2 表示碳數為1~4之烷基;Ar表示芳基)[化2](R3 3 SiO1/2 )a (R4 2 SiO2/2 )b (R5 2 SiO2/2 )c (R6 SiO3/2 )d (SiO4/2 )e (XO1/2 )f (2)(R3 、R5 以及R6 分別獨立地表示有機基,所述有機基為烷基、烯基、芳基或環氧基;其中,所有R3 以及R6 中的至少2個是烯基,R5 在此R5 所鍵結的矽原子上鍵結的另1個R5 為芳基時,並非碳數為1~4之烷基以及芳基;R4 分別獨立地表示碳數為1~4之烷基或芳基,R4 中的至少1個表示芳基;X表示氫原子或碳數為1~3之烷基;a、c、e以及f分別獨立地表示0以上之整數;b以及d分別獨立地表示1以 上之整數;其中,在a為0時,d為2以上之整數)。A curable composition comprising a compound (A) represented by the following formula (1), a polyoxyalkylene (B) represented by the following chemical formula (2), and a catalyst for hydrogenation reaction of hydrazine ( C), (wherein, n represents an integer of 1 or more; R 1 and R 2 represent an alkyl group having a carbon number of 1 to 4; and Ar represents an aryl group) [Chemical 2] (R 3 3 SiO 1/2 ) a (R 4 2 SiO 2/2 ) b (R 5 2 SiO 2/2 ) c (R 6 SiO 3/2 ) d (SiO 4/2 ) e (XO 1/2 ) f (2) (R 3 , R 5 and R 6 independently represents an organic group, which is an alkyl group, an alkenyl group, an aryl group or an epoxy group; wherein, at least two of all R 3 and R 6 are alkenyl groups, and R 5 is in this R 5 When the other R 5 bonded to the bonded ruthenium atom is an aryl group, it is not an alkyl group having a carbon number of 1 to 4 and an aryl group; and R 4 each independently represents an alkyl group or a aryl group having a carbon number of 1 to 4; a group, at least one of R 4 represents an aryl group; X represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms; a, c, e, and f each independently represent an integer of 0 or more; b and d are independently An integer of 1 or more is represented; wherein, when a is 0, d is an integer of 2 or more). 如申請專利範圍第1項所述的硬化性組成物,其中所述化學式(2)之R4 為芳基。The curable composition according to claim 1, wherein R 4 of the chemical formula (2) is an aryl group. 一種硬化物,其是將如申請專利範圍第1項或第2項所述的硬化性組成物硬化而得。 A cured product obtained by curing a curable composition according to the first or second aspect of the patent application. 一種光半導體裝置,其包含如申請專利範圍第3項所述的硬化物。 An optical semiconductor device comprising the cured product according to claim 3 of the patent application.
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