TW201316589A - Rolled copper foil for secondary battery collector and production method therefor - Google Patents

Rolled copper foil for secondary battery collector and production method therefor Download PDF

Info

Publication number
TW201316589A
TW201316589A TW101128381A TW101128381A TW201316589A TW 201316589 A TW201316589 A TW 201316589A TW 101128381 A TW101128381 A TW 101128381A TW 101128381 A TW101128381 A TW 101128381A TW 201316589 A TW201316589 A TW 201316589A
Authority
TW
Taiwan
Prior art keywords
copper foil
rolled copper
temperature
secondary battery
current collector
Prior art date
Application number
TW101128381A
Other languages
Chinese (zh)
Other versions
TWI556488B (en
Inventor
Hiroshi Kaneko
Tatsuhiko Eguchi
Minoru Igarashi
Youji Mitani
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of TW201316589A publication Critical patent/TW201316589A/en
Application granted granted Critical
Publication of TWI556488B publication Critical patent/TWI556488B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/64Carriers or collectors
    • H01M4/66Selection of materials
    • H01M4/661Metal or alloys, e.g. alloy coatings
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/02Alloys based on copper with tin as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/06Alloys based on copper with nickel or cobalt as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/02Making metallic powder or suspensions thereof using physical processes
    • B22F9/04Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
    • B22F2009/041Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling by mechanical alloying, e.g. blending, milling
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C19/00Alloys based on nickel or cobalt
    • C22C19/03Alloys based on nickel or cobalt based on nickel
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/052Li-accumulators
    • H01M10/0525Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cell Electrode Carriers And Collectors (AREA)

Abstract

Provided are: a rolled copper foil having a wide area wherein striated irregularities are formed and having excellent uniformity of roughening plating; and a production method therefor. The rolled copper foil (20) comprises copper or copper alloy formed by rolling, and the area ratio within 13 DEG of the RDW orientation {012} <100> is no more than 15% in the crystal orientation of the surface.

Description

二次電池集電體用壓延銅箔及其製造方法 Rolled copper foil for secondary battery current collector and manufacturing method thereof

本發明係有關於一種可適用於二次電池用集電體之壓延銅箔、及其製造方法,特別是有關於一種可提升以增加與活性物質間之接著性為目的之粗糙化電鍍性的壓延銅箔、及其製造方法。 The present invention relates to a rolled copper foil which can be applied to a current collector for a secondary battery, and a method for producing the same, and more particularly to a roughening plating property which can be improved for the purpose of increasing adhesion to an active material. Rolled copper foil, and a method of manufacturing the same.

壓延銅箔可應用於鋰離子電池等之二次電池的負極集電體,一般會塗佈上活性物質來使用。 The rolled copper foil can be applied to a negative electrode current collector of a secondary battery such as a lithium ion battery, and is usually coated with an active material.

因此,集電體與活性物質間之接著性差的話,便會發生種種的問題。例如,因電池製程中之外部應力,使活性物質產生脫落。而且,伴隨電池使用中充放電發生之活性物質的膨脹‧收縮,也會引起集電體與活性物質間的剝離。 Therefore, when the adhesion between the current collector and the active material is poor, various problems occur. For example, the active material is detached due to external stress in the battery process. Further, the expansion and contraction of the active material caused by charge and discharge during use of the battery cause peeling between the current collector and the active material.

因此,對壓延銅箔表面實施濕式電鍍之粗糙化處理,積極地形成具有大凹凸的表面,以用來提高集電體與活性物質間之接著性。 Therefore, the surface of the rolled copper foil is roughened by wet plating, and a surface having large irregularities is actively formed to improve the adhesion between the current collector and the active material.

此粗糙化處理後之表面的凹凸均一性係由壓延後之銅箔表面之凹凸均一性來擔保,故電池用壓延銅箔製造時表面凹凸的控制為與電池特性息息相關之重要的技術課題。 Since the unevenness uniformity of the surface after the roughening treatment is secured by the unevenness of the surface of the rolled copper foil, the control of the surface unevenness during the production of the rolled copper foil for a battery is an important technical issue that is closely related to the battery characteristics.

近年來因對電池容量更進一步地要求,活性物質之脫離為容量降低的主因。而且,由於活性物質可預期將使用矽(Si)類、與錫(Sn)類等所謂膨脹‧收縮大的活性物質,此課題尤其變得重要。 In recent years, due to the further demand for battery capacity, the separation of active materials is the main cause of capacity reduction. Further, since the active material is expected to use an active material such as cerium (Si) or tin (Sn) which is so-called expanded and contracted, this problem is particularly important.

通常,於壓延後的表面上形成了對壓延方向為60°~120°之條紋狀凹凸。然而,於相對於壓延方向之寬方向卻形成了10微米(μm)、於長方向形成了100微米(μm)之大小之條狀、無凹凸的區域,造成了問題。 Usually, stripe-like irregularities in the rolling direction of 60 to 120 are formed on the surface after rolling. However, a strip-shaped, non-concavo-convex region having a size of 10 μm (μm) formed in the width direction with respect to the rolling direction and having a size of 100 μm (μm) in the longitudinal direction causes a problem.

若於壓延銅箔表面上含有較多之上述相對於週遭凹凸較少、且粗大的區域的話,對其上施以粗糙化電鍍時,將形成含有較小凹凸區域之變異大的粗糙化表面,引起部分活性物質剝離的問題發生。 When the surface of the rolled copper foil contains a large amount of the region which is small and coarse with respect to the surrounding unevenness, when the roughening plating is applied thereto, a roughened surface having a large variation of the uneven portion is formed. A problem that causes some of the active material to peel off occurs.

關於壓延銅箔表面凹凸的控制,有幾個方法已被提出(例如參照專利文獻1~3)。 Several methods have been proposed for controlling the unevenness of the surface of the rolled copper foil (for example, refer to Patent Documents 1 to 3).

專利文獻1提出藉由壓延條件之最適化,以提高凹凸之平均間隔之方法;專利文獻2則提出減少凹凸之平均間隔的方法。 Patent Document 1 proposes a method of improving the average interval of unevenness by optimizing the rolling conditions, and Patent Document 2 proposes a method of reducing the average interval of the unevenness.

專利文獻3揭示表面粗糙度Ra與局部山峰之平均間隔S的最佳範圍。 Patent Document 3 discloses an optimum range of the average interval S between the surface roughness Ra and the local peaks.

習知技術文獻 Conventional technical literature

專利文獻 Patent literature

專利文獻1:日本專利公開公報第2006-281249號 Patent Document 1: Japanese Patent Laid-Open Publication No. 2006-281249

專利文獻2:日本專利公開公報第2007-268596號 Patent Document 2: Japanese Patent Laid-Open Publication No. 2007-268596

專利文獻3:世界專利公開公報WO第2001/029912號 Patent Document 3: World Patent Publication No. WO 2001/029912

上述專利文獻中,僅以一定方向之一次元凹凸之間隔 為指標來控制,並無進行面積的控制。再加上,光澤度、表面粗糙度Ra、Rz等為廣泛測量範圍之平均指標,並無控制其中的不均一性。 In the above patent documents, only the interval of the primary concavities and convexities in a certain direction is Controlled by indicators, there is no area control. In addition, gloss, surface roughness Ra, Rz, etc. are average indicators of a wide range of measurement, and there is no control over the heterogeneity.

另外,專利文獻1與2中,其控制方法為最適化之壓延條件,並不能有效消除不均一性。因此,常有無法滿足近幾年來對電池的要求。 Further, in Patent Documents 1 and 2, the control method is an optimum rolling condition, and the unevenness cannot be effectively eliminated. Therefore, it is often impossible to meet the requirements for batteries in recent years.

本發明之目的係提供一種條狀凹凸所形成之區域廣泛、具有優良之粗糙化電鍍均一性之二次電池集電體用壓延銅箔、及其製造方法。 An object of the present invention is to provide a rolled copper foil for a secondary battery current collector having a wide range of strip-shaped irregularities and having excellent roughening plating uniformity, and a method for producing the same.

本發明人等針對有關於上述條狀凹凸於每個位置形成之不均一性,對結晶位向影響作積極地討論研究。然後,本發明人歸納出未形成條狀凹凸區域之結晶位向主要為RDW位向之{012}<100>,藉由減少此位向之壓延銅箔表面,可使表面凹凸均一化,達到良好的與活性物質間之接著性,而提出了本發明。 The present inventors have actively studied the influence of the crystal orientation on the unevenness of the formation of the strip-like irregularities at each position. Then, the inventors have found that the crystal orientation of the unformed strip-shaped concavo-convex region is mainly {012}<100>, and by reducing the position of the copper foil to the surface, the surface irregularities can be uniformized. The present invention has been proposed in view of good adhesion to an active material.

另外,壓延銅箔中之RDW位向受製程中之最後退火組織的影響很大,因此發明了控制該影響之製程步驟。 In addition, the RDW position in the rolled copper foil is greatly affected by the final annealed structure in the process, and thus the process steps for controlling the influence are invented.

本發明係提供一種壓延銅箔,係以壓延所形成之銅或銅合金所構成之壓延銅箔,包括:於表面結晶位向中,RDW位向之{012}<100>方向起13°以內之面積比為15%以下。 The invention provides a rolled copper foil which is a rolled copper foil composed of copper or a copper alloy formed by calendering, comprising: in the surface crystal orientation direction, the RDW position is within 13° of the {012}<100> direction The area ratio is 15% or less.

又,壓延銅箔雖亦指純銅之壓延箔,但於本案中泛指銅合金之壓延箔。 Further, the rolled copper foil is also referred to as a rolled foil of pure copper, but in this case, it is generally referred to as a rolled foil of a copper alloy.

相對於壓延方向之60°~120°方向之條狀圖案之表面凹凸所發現之區域的面積比較佳為60%以上。 The area of the area where the stripe pattern of the strip pattern in the direction of 60° to 120° in the rolling direction is found is preferably 60% or more.

壓延銅箔較佳係包括主成份為Cr與Zr中至少一種之Cu-(Cr,Zr)系銅合金,其主成份之Cr與Zr中至少一種之總含量為0.01~0.9重量%。 The rolled copper foil preferably comprises a Cu-(Cr, Zr)-based copper alloy having a main component of at least one of Cr and Zr, and a total content of at least one of Cr and Zr as a main component is 0.01 to 0.9% by weight.

此外,Cu-(Cr,Zr)系壓延銅箔較佳包括Sn、Zn、Si、Mn、Mg中至少一種成份之總含量為0.01~0.45重量%之副添加成份。 Further, the Cu-(Cr, Zr)-based rolled copper foil preferably includes a sub-addition component having a total content of at least one of Sn, Zn, Si, Mn, and Mg of 0.01 to 0.45 wt%.

又,Cu-(Cr,Zr)系壓延銅箔除主成份外之剩餘部份、或除主成份與副添加成份外之剩餘部份係由不可避免之不純物所組成。 Further, the Cu-(Cr, Zr)-based rolled copper foil is composed of the remainder except the main component, or the remainder except the main component and the sub-additive component, which are composed of unavoidable impurities.

壓延銅箔較佳係包括主成份為Ag之Cu-Ag系銅合金,其主成份之Ag之總含量為0.01~0.9重量%。 The rolled copper foil preferably comprises a Cu-Ag-based copper alloy having a main component of Ag, and a total content of Ag of the main component is 0.01 to 0.9% by weight.

Cu-Ag系壓延銅箔較佳包括Sn、Zn、Si、Mn、Mg中至少一種成份之總含量為0.01~0.45重量%之副添加成份。 The Cu-Ag-based rolled copper foil preferably includes a sub-addition component having a total content of at least one of Sn, Zn, Si, Mn, and Mg of 0.01 to 0.45 wt%.

又,Cu-Ag系壓延銅箔除主成份外之剩餘部份、或除主成份與副添加成份外之剩餘部份係由不可避免之不純物所組成。 Further, the remaining portion of the Cu-Ag-based rolled copper foil except for the main component, or the remainder other than the main component and the sub-additive component, is composed of unavoidable impurities.

壓延銅箔較佳係包括主成份為Sn之Cu-Sn系銅合金,其主成份之Sn之總含量為0.01~4.9重量%。 The rolled copper foil preferably comprises a Cu-Sn-based copper alloy having a main component of Sn, and the total content of Sn of the main component is 0.01 to 4.9% by weight.

Cu-Sn系壓延銅箔較佳包括Zn、Si、P、Mg中至少一種成份之總含量為0.01~0.45重量%之副添加成份。 The Cu-Sn-based rolled copper foil preferably includes a sub-additive component having a total content of at least one of Zn, Si, P, and Mg of 0.01 to 0.45 wt%.

又,Cu-Sn系壓延銅箔除主成份外之剩餘部份、或除主成份與副添加成份外之剩餘部份係由不可避免之不純物 所組成。 Moreover, the remaining portion of the Cu-Sn-based rolled copper foil except for the main component, or the remainder except the main component and the sub-additive component, is an unavoidable impurity. Composed of.

壓延銅箔較佳係包括主成份為Ni與Si之Cu-Ni-Si系銅合金,其主成份之Ni含量為1.4~4.8重量%,Si含量為0.2~1.3重量%。 The rolled copper foil preferably comprises a Cu-Ni-Si-based copper alloy having a main component of Ni and Si, and has a Ni content of 1.4 to 4.8% by weight and a Si content of 0.2 to 1.3% by weight.

Cu-Ni-Si系壓延銅箔較佳包括Sn、Zn、Si、Cr、Mn、Mg、Co中至少一種成份之總含量為0.005~0.9重量%之副添加成份。 The Cu-Ni-Si-based rolled copper foil preferably includes a sub-additive component having a total content of at least one of Sn, Zn, Si, Cr, Mn, Mg, and Co of 0.005 to 0.9% by weight.

又,Cu-Ni-Si系壓延銅箔除主成份外之剩餘部份、或除主成份與副添加成份外之剩餘部份係由不可避免之不純物所組成。 Further, the remaining portion of the Cu-Ni-Si-based rolled copper foil except for the main component, or the remainder other than the main component and the sub-additive component, is composed of unavoidable impurities.

壓延銅箔較佳係包括氧之純銅系,氧含量為2~200ppm。 The rolled copper foil preferably comprises a pure copper system of oxygen and has an oxygen content of 2 to 200 ppm.

又,純銅系壓延銅箔之剩餘部份係由不可避免之不純物所組成。 Moreover, the remainder of the pure copper-based rolled copper foil is composed of unavoidable impurities.

再者,本發明之製造方法,係製造上述之壓延銅箔中任一種之壓延銅箔之壓延銅箔之製造方法,包括:熱間壓延步驟,對被壓延材料加熱至再結晶溫度以上之溫度,以進行熱間壓延;至少2次之中間冷間壓延步驟,於上述熱間壓延步驟之後,於在不會產生再結晶之溫度下進行冷間壓延;至少1次之中間退火步驟,於上述中間冷間壓延步驟之間,於在不會產生再結晶之溫度下進行冷間壓延;以及最後退火步驟,於最後之上述中間冷間壓延步驟之後,於特定溫度下,且以特定之升溫速度,來進行最後之退火,於進行上述最後退火步驟之前之上述中間退火步驟中,上述升溫速度設定為不給予產生再結晶前驅現象時間之速 度,到達溫度設定為抑制特定之邊界粒徑之優先移動、並可獲得隨機化再結晶組織之高溫。 Further, the production method of the present invention is a method for producing a rolled copper foil of a rolled copper foil according to any one of the above-described rolled copper foils, comprising: a heat-calendering step of heating the rolled material to a temperature higher than a recrystallization temperature For performing inter-heat rolling; at least 2 intermediate cold rolling steps, after the hot pressing step, performing cold rolling at a temperature at which no recrystallization occurs; at least one intermediate annealing step, Between intermediate cold rolling steps, cold rolling is performed at a temperature at which no recrystallization occurs; and final annealing step, after the last intermediate cold rolling step, at a specific temperature, and at a specific heating rate To perform the final annealing, in the above intermediate annealing step before the final annealing step, the temperature increasing rate is set to be not given the time for generating the recrystallization precursor phenomenon. The degree of arrival temperature is set to suppress the preferential movement of the specific boundary particle size, and the high temperature of the randomized recrystallized structure can be obtained.

於進行上述最後退火步驟前之上述中間退火步驟中,上述到達溫度較佳係比銅合金之再結晶上限溫度高之溫度。 In the above intermediate annealing step before the final annealing step, the above-mentioned reaching temperature is preferably a temperature higher than the recrystallization upper limit temperature of the copper alloy.

於進行上述最後退火步驟前之上述中間退火步驟中,上述升溫速度較佳係2℃/秒以上,上述到達溫度較佳係800℃以上之高溫。 In the intermediate annealing step before the final annealing step, the temperature increase rate is preferably 2 ° C /sec or more, and the reaching temperature is preferably 800 ° C or higher.

壓延銅箔之製造方法較佳更包括:第一中間冷間壓延步驟,於上述熱間壓延步驟之後進行冷間壓延;第一中間退火步驟,於上述第一中間冷間壓延步驟之後進行中間退火;第二中間冷間壓延步驟,於上述第一中間退火步驟之後進行冷間壓延;第二中間退火步驟,於上述第二中間冷間壓延步驟之後進行中間退火;及第三中間冷間壓延步驟,於上述第二中間退火步驟之後進行冷間壓延,上述最後退火步驟較佳係於上述第三中間冷間壓延步驟之後進行,上述第二中間退火步驟較佳係於上述最後退火步驟之前進行之上述中間退火步驟,上述升溫速度較佳設定為不給予產生再結晶前驅現象時間之速度,到達溫度較佳設定為抑制特定之邊界粒徑之優先移動、且可獲得隨機化再結晶組織之高溫。 Preferably, the method for manufacturing a rolled copper foil further comprises: a first intermediate cold rolling step, performing cold rolling after the hot pressing step; and a first intermediate annealing step, performing intermediate annealing after the first intermediate cold rolling step a second intermediate cold rolling step, performing cold rolling after the first intermediate annealing step; a second intermediate annealing step, performing intermediate annealing after the second intermediate cold rolling step; and a third intermediate cold rolling step Performing cold rolling after the second intermediate annealing step, wherein the final annealing step is preferably performed after the third intermediate cold rolling step, and the second intermediate annealing step is preferably performed before the final annealing step. In the intermediate annealing step, the temperature increase rate is preferably set to a rate at which the recrystallization precursor phenomenon is not given, and the arrival temperature is preferably set to suppress the preferential movement of the specific boundary particle diameter, and the high temperature of the randomized recrystallized structure can be obtained.

於上述熱間壓延步驟之前,較佳更包括均質化熱處理步驟,以對上述被壓延材料,進行均質化熱處理。 Preferably, before the intercalation step, a homogenization heat treatment step is further included to perform a homogenization heat treatment on the calendered material.

根據本發明,可達到條狀凹凸之形成區域廣、且具有優良之粗糙化電鍍均一性的壓延銅箔,因而獲得良好之集電體與活性物質間的接著性。 According to the present invention, it is possible to obtain a rolled copper foil having a wide formation area of strip-like irregularities and excellent roughening plating uniformity, thereby obtaining good adhesion between the current collector and the active material.

其結果藉由電池等製程中所形成之外力,使活性物質由集電體不易脫落,而可提高二次電池的容量。再者,即使於充‧放電時膨脹‧收縮量大的錫(Sn)類與矽(Si)類等之活性物質發生變形,不僅可防止活性物質與集電體的脫離,而且也可提高二次電池之充‧放電的循環特性。 As a result, an external force formed in a process such as a battery can make the active material less likely to fall off from the current collector, and the capacity of the secondary battery can be improved. Furthermore, even if the active material such as tin (Sn) and cerium (Si) which are expanded and ‧ contracted during charging and discharging are deformed, not only the active material and the current collector can be prevented from being separated, but also the second can be improved. The secondary battery is charged and discharged.

圖1係繪示根據本發明之實施形態之以壓延銅箔為負極集電體之鋰二次電池之簡單示意圖。 1 is a schematic view showing a lithium secondary battery using a rolled copper foil as a negative electrode current collector according to an embodiment of the present invention.

圖2係繪示根據本發明之實施形態之壓延銅箔之擴大示意圖。 Fig. 2 is a schematic enlarged view showing a rolled copper foil according to an embodiment of the present invention.

圖1之鋰二次電池10包括正極11、負極12、正極集電體13、負極集電體14、隔板15、正極側電池罐16、負極側電池罐17、與絕緣包裝18所構成。 The lithium secondary battery 10 of FIG. 1 includes a positive electrode 11, a negative electrode 12, a positive electrode current collector 13, a negative electrode current collector 14, a separator 15, a positive electrode side battery can 16, a negative electrode side battery can 17, and an insulating package 18.

正極11與負極12係中間隔著隔板15相對配置。這些正極11、負極12、隔板15收納於由正極側電池罐16、與負極側電池罐17所形成之電池盒中。 The positive electrode 11 and the negative electrode 12 are arranged to face each other with the separator 15 interposed therebetween. The positive electrode 11, the negative electrode 12, and the separator 15 are housed in a battery case formed of the positive electrode side battery can 16 and the negative electrode side battery can 17 .

於此收納狀態,正極11經由正極集電體13,與正極側電池罐16相連接;負極12經由負極集電體14,與負極側電池罐17相連接。 In the storage state, the positive electrode 11 is connected to the positive electrode side battery can 16 via the positive electrode current collector 13 , and the negative electrode 12 is connected to the negative electrode side battery can 17 via the negative electrode current collector 14 .

藉由此構造,電池10可進行充電與放電。 With this configuration, the battery 10 can be charged and discharged.

本實施形態中,以圖2所示之壓延銅箔20,來作為此負極集電體14。 In the present embodiment, the rolled copper foil 20 shown in Fig. 2 is used as the negative electrode current collector 14.

本實施形態之壓延銅箔20係例如將厚度d設定於12μm以下,並具有以下特徵所構成。 The rolled copper foil 20 of the present embodiment is configured by, for example, setting the thickness d to 12 μm or less.

壓延銅箔20之相對於壓延方向之60°~120°方向之具有條狀圖案的表面凹凸所發現之區域的面積比為60%以上。 The area ratio of the region of the rolled copper foil 20 which is found to have a strip-like pattern in the direction of 60° to 120° in the rolling direction is 60% or more.

此外,壓延銅箔20於表面之結晶位向中之RDW位向之{012}<100>方向起13°以內之面積比為15%以下。 Further, the area ratio of the RDW position of the rolled copper foil 20 to the center in the {012}<100> direction of the crystal orientation of the surface is 15% or less.

結晶位向可例如以電子背散射繞射(EBSD法)來進行結晶位向的測量。 The crystal orientation can be measured, for example, by electron backscatter diffraction (EBSD method).

另外,本實施形態之壓延銅箔20係以以下(1)~(5)所示之銅合金或純銅系來形成。 Further, the rolled copper foil 20 of the present embodiment is formed of a copper alloy or a pure copper system represented by the following (1) to (5).

(1):Cu-(Cr,Zr)系銅合金 (1): Cu-(Cr, Zr) copper alloy

壓延銅箔20係包括主成份為Cr與Zr中至少一種之Cu-(Cr,Zr)系銅合金,此銅合金係由主成份之Cr與Zr中至少一種之總含量為0.01~0.9重量%所形成。 The rolled copper foil 20 includes a Cu-(Cr, Zr)-based copper alloy having a main component of at least one of Cr and Zr, and the copper alloy is composed of a total content of at least one of Cr and Zr of the main component of 0.01 to 0.9% by weight. Formed.

此外,Cu-(Cr,Zr)系銅合金可因應需要添加副添加成份,此時銅合金係由副添加成份之Sn、Zn、Si、Mn、Mg中至少一種成份之總含量為0.01~0.45重量%所形成。 In addition, the Cu-(Cr, Zr)-based copper alloy may add a sub-additive component as needed. At this time, the total content of at least one of Sn, Zn, Si, Mn, and Mg in the copper alloy is 0.01-0.45. The weight % is formed.

Cu-(Cr,Zr)系銅合金除主成份外之剩餘部份、或除主成份與副添加成份外之剩餘部份係由不可避免之不純物所組成。 The remainder of the Cu-(Cr,Zr)-based copper alloy except for the main component, or the remainder except the main component and the sub-additive component, is composed of unavoidable impurities.

(2):Cu-Ag系銅合金 (2): Cu-Ag copper alloy

壓延銅箔20係包括主成份為Ag之Cu-Ag系銅合金,此銅合金係由主成份Ag之總含量為0.01~0.9重量%所形成。 The rolled copper foil 20 includes a Cu-Ag-based copper alloy having a main component of Ag, which is formed by a total content of the main component Ag of 0.01 to 0.9% by weight.

此外,Cu-Ag系銅合金可因應需要添加副添加成份,此時銅合金係由副添加成份之Sn、Zn、Si、Mn、Mg中至少一種成份之總含量為0.01~0.45重量%所形成。 In addition, the Cu-Ag-based copper alloy may be added with a sub-additive component as needed, and the copper alloy is formed by adding a total content of at least one of Sn, Zn, Si, Mn, and Mg of the sub-additive component to 0.01 to 0.45 wt%. .

Cu-Ag系銅合金除主成份外之剩餘部份、或除主成份與副添加成份外之剩餘部份係由不可避免之不純物所組成。 The remainder of the Cu-Ag-based copper alloy except for the main component, or the remainder except the main component and the sub-additive component, is composed of unavoidable impurities.

(3):Cu-Sn系銅合金 (3): Cu-Sn copper alloy

壓延銅箔20係包括主成份為Sn之Cu-Sn系銅合金,此銅合金係由主成份Sn之總含量為0.01~4.9重量%所形成。 The rolled copper foil 20 includes a Cu-Sn-based copper alloy having a main component of Sn, which is formed by a total content of the main component Sn of 0.01 to 4.9% by weight.

此外,Cu-Sn系銅合金可因應需要添加副添加成份,此時銅合金係由副添加成份之Zn、Si、P、Mg中至少一種成份之總含量為0.01~0.45重量%所形成。 Further, the Cu-Sn-based copper alloy may be added with a sub-additive component as needed, and the copper alloy is formed by a total content of at least one of Zn, Si, P, and Mg of the sub-additive component of 0.01 to 0.45 wt%.

Cu-Sn系銅合金除主成份外之剩餘部份、或除主成份與副添加成份外之剩餘部份係由不可避免之不純物所組成。 The remainder of the Cu-Sn-based copper alloy except for the main component, or the remainder except the main component and the sub-additive component, is composed of unavoidable impurities.

(4):Cu-Ni-Si系銅合金 (4): Cu-Ni-Si copper alloy

壓延銅箔20係包括主成份為Ni與Si之Cu-Ni-Si系銅合金,此銅合金係由主成份之Ni含量為1.4~4.8重量%、Si含量為0.2~1.3重量%所形成。 The rolled copper foil 20 includes a Cu-Ni-Si-based copper alloy having a main component of Ni and Si, and the copper alloy is formed by a Ni content of the main component of 1.4 to 4.8% by weight and a Si content of 0.2 to 1.3% by weight.

此外,Cu-Ni-Si系銅合金可因應需要添加副添加成 份,此時銅合金係由副添加成份之Sn、Zn、Si、Cr、Mn、Mg、Co中至少一種成份之總含量為0.005~0.9重量%所形成。 In addition, Cu-Ni-Si copper alloy can be added as needed to add In this case, the copper alloy is formed by a total content of at least one of Sn, Zn, Si, Cr, Mn, Mg, and Co as a by-additive component of 0.005 to 0.9% by weight.

Cu-Ni-Si系銅合金除主成份外之剩餘部份、或除主成份與副添加成份外之剩餘部份係由不可避免之不純物所組成。 The remainder of the Cu-Ni-Si copper alloy except for the main component, or the remainder except the main component and the sub-additive component, is composed of unavoidable impurities.

(5):含氧之純銅系(TPC系) (5): Pure copper system containing oxygen (TPC system)

壓延銅箔20係為含氧之純銅系(TPC系)銅材料,氧含量為2~200ppm,剩餘部份係由不可避免之不純物所組成。 The rolled copper foil 20 is an oxygen-containing pure copper-based (TPC-based) copper material having an oxygen content of 2 to 200 ppm, and the remainder is composed of unavoidable impurities.

在此不可避免之不純物基本上為金屬製品,存在於原料中,於製造步驟中不可避免地混入,本來為不欲使其存在之成份,但因微量、且對金屬製品的特性無大的影響,因此允許其存在之不純物。 The unavoidable impurities are basically metal products, which are present in the raw materials and are inevitably mixed in the manufacturing process. They are originally components which are not intended to be present, but have little influence on the properties of the metal products. Therefore, it is allowed to exist as an impurity.

圖3係繪示根據本發明之實施形態之壓延銅箔20之製造方法說明圖。 Fig. 3 is an explanatory view showing a method of manufacturing the rolled copper foil 20 according to the embodiment of the present invention.

壓延銅箔20如圖3所示,以第1步驟ST1至第13步驟ST13之基本製程來製作。 As shown in FIG. 3, the rolled copper foil 20 is produced by the basic processes of the first step ST1 to the thirteenth step ST13.

第1步驟ST1為溶解原料之溶解步驟,第2步驟ST2為鑄造溶解後之原料以形成被壓延材料(鑄塊)之鑄造步驟,第3步驟ST3為將被壓延材料之鑄造組織均質化之熱處理的均質化熱處理步驟。 The first step ST1 is a dissolution step of dissolving the raw material, the second step ST2 is a casting step of casting the dissolved raw material to form a rolled material (ingot), and the third step ST3 is a heat treatment for homogenizing the cast structure of the rolled material. Homogenization heat treatment step.

第4步驟ST4為熱間壓延步驟。所謂熱間壓延係指對金屬進行加熱至再結晶溫度以上之溫度的壓延。第5步驟ST5為水冷卻步驟,第6步驟ST6為用以去除氧化鏽皮之 面車削步驟。 The fourth step ST4 is a hot rolling step. The term "intercalation" refers to rolling in which the metal is heated to a temperature higher than the recrystallization temperature. The fifth step ST5 is a water cooling step, and the sixth step ST6 is for removing the rust scale. Face turning steps.

第7步驟ST7為第一(中間)冷間壓延步驟,第8步驟ST8為進行中間退火之第一中間退火步驟。所謂冷間壓延係指進行於不產生再結晶之溫度範圍(例如常溫)下所進行的壓延。 The seventh step ST7 is a first (intermediate) cold rolling step, and the eighth step ST8 is a first intermediate annealing step for performing intermediate annealing. The term "cold rolling" refers to rolling performed at a temperature range (for example, normal temperature) in which no recrystallization occurs.

第9步驟ST9為第二中間冷間壓延步驟,第10步驟ST10為第二中間退火步驟,第11步驟ST11為第三中間冷間壓延步驟。 The ninth step ST9 is a second intermediate cold rolling step, the tenth step ST10 is a second intermediate annealing step, and the eleventh step ST11 is a third intermediate cold rolling step.

第12步驟為進行最後退火之最後退火步驟,第13步驟ST13為壓延完成步驟。 The twelfth step is a final annealing step for performing the final annealing, and the thirteenth step ST13 is a calendering completion step.

本實施形態之製造壓延銅箔20處理之特徵係於第8步驟ST8之第一中間退火步驟、第10步驟ST10之第二中間退火步驟中於進行第12步驟ST12之最後退火步驟前之第二中間退火步驟中,升溫速度與到達溫度以如下條件來設定。 The process of manufacturing the rolled copper foil 20 of the present embodiment is characterized by the first intermediate annealing step of the eighth step ST8 and the second intermediate annealing step of the tenth step ST10, the second before the final annealing step of the twelfth step ST12. In the intermediate annealing step, the temperature increase rate and the reaching temperature are set under the following conditions.

本實施形態中,第10步驟ST10之第二中間退火步驟中,將升溫速度設定為比一般中間退火之升溫速度高、且不給予產生再結晶前驅現象時間之速度,而且將退火之到達溫度設定為可抑制特定之邊界粒徑之優先移動、並可獲得隨機化再結晶組織、比銅合金之再結晶上限溫度高之高溫。 In the second intermediate annealing step of the tenth step ST10, the temperature increase rate is set to be higher than the temperature increase rate of the general intermediate annealing, and the speed at which the recrystallization precursor phenomenon is generated is not given, and the annealing temperature is set. In order to suppress the preferential movement of the specific boundary particle diameter, a randomized recrystallized structure can be obtained, which is higher than the upper limit temperature of the recrystallization of the copper alloy.

本實施形態之壓延銅箔20之製造特徵在於第10步驟ST10之第二中間退火之升溫速度係2℃/秒以上,且到達溫度係800℃以上。 The rolled copper foil 20 of the present embodiment is characterized in that the temperature rise rate of the second intermediate annealing in the tenth step ST10 is 2 ° C /sec or more, and the temperature reaches 800 ° C or higher.

亦即,本實施形態之壓延銅箔20之製造係以1秒間數℃之速度、或以數十℃之速度來進行升溫。 That is, the rolled copper foil 20 of the present embodiment is heated at a speed of several ° C or at a speed of several tens of ° C.

以下將對本實施形態之壓延銅箔20之上述表面組織、結晶位向、控制結晶位向之製造方法、合金成份等之特徵,進行具體的說明,而且,以上述(1)~(5)之銅合金的實施例,一邊與參考例與比較例作比較,來進行說明。 The characteristics of the surface structure, the crystal orientation, the method of controlling the crystal orientation, the alloy composition, and the like of the rolled copper foil 20 of the present embodiment will be specifically described below, and the above (1) to (5) are also specifically described. The examples of the copper alloy will be described in comparison with the reference examples and the comparative examples.

〔表面組織〕 [surface texture]

圖4係繪示壓延銅箔之表面組織中條狀凹凸區域、與於條狀凹凸區域中所發現之低凹凸區域之示意圖。 Fig. 4 is a schematic view showing a strip-shaped uneven portion in the surface structure of the rolled copper foil and a low uneven portion found in the strip-shaped uneven portion.

圖4中,1H表示條狀凹凸區域,1L表示低凹凸區域。 In Fig. 4, 1H indicates a strip-shaped uneven region, and 1L indicates a low uneven portion.

圖5係繪示根據本實施形態之壓延銅箔20之表面組織其條狀凹凸多的狀態之示意圖。 Fig. 5 is a schematic view showing a state in which the surface of the rolled copper foil 20 of the present embodiment has a large number of strip-like irregularities.

本實施形態中,將圖4中所示之條狀凹凸區域1H的面積,除以整個面積,來作為面積比。 In the present embodiment, the area of the strip-shaped uneven region 1H shown in Fig. 4 is divided by the entire area as the area ratio.

面積比於60%以上為擔保粗糙化電鍍之均一性的必要條件。其較佳為70%以上,更佳為80%以上。 An area ratio of more than 60% is a necessary condition for guaranteeing the uniformity of roughening plating. It is preferably 70% or more, more preferably 80% or more.

圖5中所示之本實施形態之壓延銅箔20,為條狀凹凸多的狀態。 The rolled copper foil 20 of the present embodiment shown in Fig. 5 has a state in which strips have a large number of irregularities.

〔結晶位向〕 [crystal orientation]

壓延銅箔20中,RDW位向愈少,條狀凹凸區域之面積比愈高,愈可進行良好的粗糙化電鍍,其RDW位向之面積比為15%以下,較佳為12%以下,更佳為8%以下。 In the rolled copper foil 20, the smaller the RDW orientation, the higher the area ratio of the strip-shaped uneven regions, and the better the roughening plating is performed, and the area ratio of the RDW is 15% or less, preferably 12% or less. More preferably, it is 8% or less.

圖6係繪示EBSD測量結果之圖示。 Figure 6 is a graphical representation of the EBSD measurement results.

圖6中繪示定義為壓延集合組織之Brass位向、S位 向與RDW位向之位向區域、與鄰接測定點間所形成的角度為15°以上之結晶粒子邊界。 Figure 4 shows the Brass direction, S-bit defined as the calendered assembly. The angle formed by the angle between the region facing the RDW and the adjacent measurement point is 15° or more.

Brass位向、S位向之區域RGN-BS於壓延方向(RD,圖之左右方向)分成10μm左右大小的結晶粒,其大小與條狀凹凸對應。 The Brass orientation and the S-direction region RGN-BS are divided into crystal grains having a size of about 10 μm in the rolling direction (RD, the left-right direction of the figure), and the size thereof corresponds to the strip-shaped unevenness.

另一方面,RDW位向之區域RGN-R其結晶粒內雖具有位向斜率,但不具有結晶粒邊界,於RD方向形成粗大之結晶粒,此對應不具有條狀凹凸之區域。 On the other hand, in the region RGN-R where the RDW is located, although the crystal grain has a slope in the orientation, it does not have a crystal grain boundary, and coarse crystal grains are formed in the RD direction, which corresponds to a region having no strip-like irregularities.

具有此RDW位向之特異性的起因是因為可利用結晶滑移少之作功量來進行之緣故。關於對多結晶材料之滑移變形之結晶位向的影響有Taylor模型(例如J.Inst.Metals,62(1938),307-324),Taylor因子即相當於上述作功量。 The cause of the specificity of this RDW orientation is due to the fact that the work of the crystal slip is small. The influence on the crystal orientation of the slip deformation of the polycrystalline material is a Taylor model (for example, J. Inst. Metals, 62 (1938), 307-324), and the Taylor factor corresponds to the above work amount.

Brass位向與S位向之壓延變形中之Taylor因子分別為3.3與3.5,相對於此,RDW位向之Taylor因子為2.4,為所有結晶位向中最低的值。 The Taylor factor in the Brass orientation and the S-position calender deformation is 3.3 and 3.5, respectively, whereas the RDW position has a Taylor factor of 2.4, which is the lowest of all crystal orientations.

亦即,於進行高加工率之箔片壓延步驟、錯位與空洞等之格子缺陷密度顯著高的狀況中,由於Brass位向與S位向不易發生結晶滑移,藉由剪切帶與結晶邊界的形成承擔變形,使結晶粒產生斷裂,結果於壓延表面形成了凹洞。 That is, in the case where the high-work rate foil rolling step, the lattice defect density such as the misalignment and the void are remarkably high, the Brass position and the S-position are less likely to cause crystal slip, by the shear band and the crystal boundary The formation assumes deformation, causing the crystal grains to break, and as a result, a cavity is formed in the calendered surface.

相對於此,RDW位向由於因結晶滑移承擔變形,僅有一個結晶粒伸長,而於結晶內不會形成新的結晶邊界,結果形成了凹洞少的表面。 On the other hand, the RDW position undergoes deformation due to crystal slip, and only one crystal grain is elongated, and a new crystal boundary is not formed in the crystal, and as a result, a surface having few pits is formed.

本說明書中結晶位向之表示方法係取材料之壓延方向 (RD)為X軸,取材料之寬度方向(TD)為Y軸,取壓延法線方向(ND)為Z軸之直角座標系,並利用材料中之各區域與Z軸垂直(與壓延表面(XY面)平行)之結晶面的指數(hk1)、及與X軸垂直(與YZ面)平行)之結晶面的指數[uvw],而表示為(hk1)[uvw]的形式。 In this specification, the crystal orientation indicates that the method is to take the rolling direction of the material. (RD) is the X-axis, the width direction (TD) of the material is taken as the Y-axis, and the normal direction of the rolling (ND) is taken as the coordinate system of the Z-axis, and each region in the material is perpendicular to the Z-axis (with the calendering surface). The index (hk1) of the crystal plane of (XY plane) parallel and the index [uvw] of the crystal plane perpendicular to the X axis (parallel to the YZ plane) is expressed as the form of (hk1) [uvw].

此外,如同(120)[001]與(210)[001]等,以銅合金之立方晶之對稱性為參考,其等價的位向使用表示同系列之括號{hk1}<uvw>表示。 Further, as in (120) [001] and (210) [001], etc., the symmetry of the cubic crystal of the copper alloy is referred to, and the equivalent bitwise direction is expressed by the brackets {hk1}<uvw> indicating the same series.

本實施形態中,上述結晶位向的分析係使用EBSD法。所謂EBSD法係Electron Back Scatter Diffraction(電子背散射繞射)的簡稱,其係指於利用掃描式電子顯微鏡(Sacnning Electron Microscope;SEM)中對樣本照射電子射線時所產生之反射電子菊池線繞射(菊池圖)之結晶位向分析技術。 In the present embodiment, the analysis of the crystal orientation described above uses the EBSD method. The so-called EBSD method is the abbreviation of Electron Back Scatter Diffraction, which refers to the reflection of the reflected electron Kikuchi line generated by irradiating an electron beam to a sample in a Sacnning Electron Microscope (SEM). (Kikuchi diagram) crystal orientation analysis technology.

本實施形態係對5平方微米以上之樣本面積,以0.2μm之步進進行掃描,以進行位向之分析。 In the present embodiment, the sample area of 5 square micrometers or more is scanned in steps of 0.2 μm for analysis of the orientation.

面積比係指由理想位向偏差角度為13°以內區域的面積,除以(除上)整個測量面積所計算出的比率。 The area ratio refers to the area of the area within 13° from the ideal position deviation angle, divided by the ratio calculated by dividing the entire measurement area.

由理想位向偏差之角度係將共同的轉軸為中心計算轉角,來設定偏差角度。 From the ideal position to the deviation angle, the rotation angle is calculated from the common rotation axis to set the deviation angle.

圖7係繪示以由RDW位向之偏差角度為13°以內之位向為例子之示圖示。 Fig. 7 is a diagram showing an example in which the direction of deviation from the RDW position is within 13°.

圖7中雖繪示(001)、(101)與(111)轉軸之13°以內的位向,但此處對所有的轉軸計算其與RDW位向之 轉角。而此處之轉軸係採可表現最小偏差角度者。 Although the orientations within 13° of the (001), (101) and (111) axes are shown in Figure 7, the RDW position is calculated for all the axes here. Corner. Here, the shaft can be used to exhibit the smallest deviation angle.

EBSD之位向分析所得到之數據雖包括電子射線進行樣本數10nm深度之位向數據,但相對於測量的廣度來說其相當小,故於本說明書中以面積比來表示。此外,位向分佈係由板表面進行測量。 Although the data obtained by the analysis of the EBSD position includes the electron beam to carry out the bit direction data of the depth of the sample of 10 nm, it is relatively small with respect to the breadth of the measurement, and is represented by the area ratio in the present specification. In addition, the orientation distribution is measured from the surface of the board.

〔控制結晶位向之製程〕 [Controlling the process of crystallization to the process]

此顯示本發明之實施形態中用以控制所研究出之有效性結晶位向之製造流程。 This shows the manufacturing process for controlling the effectiveness of the crystallographic orientations studied in the embodiment of the present invention.

此外,如上所述,只要可滿足對壓延方向之60°~120°方向之條狀圖案之表面凹凸所發現之區域的面積比為60%以上、且於表面之結晶位向之RDW位向之{012}<100>方向起13°以內之面積比為15%以下者,並不限於此處所示之製造流程。 Further, as described above, the area ratio of the region where the surface unevenness of the strip pattern in the direction of 60° to 120° in the rolling direction is satisfied is 60% or more, and the RDW position of the crystal on the surface is directed thereto. The area ratio of the area within 13 degrees from the {012}<100> direction is 15% or less, and is not limited to the manufacturing process shown here.

用以控制結晶位向之壓延銅箔20之製造流程如圖3所示,由第1步驟ST1至第13步驟ST13為基本步驟。 As shown in FIG. 3, the manufacturing process for controlling the rolled copper foil 20 in the crystal orientation is the basic step from the first step ST1 to the thirteenth step ST13.

亦即,包括溶解步驟、鑄造步驟、均質化熱處理步驟、熱間壓延步驟、水冷卻步驟、面車削步驟、第一(中間)冷間壓延步驟、第一中間退火步驟、第二中間冷間步驟、第二中間退火步驟、第三中間冷間步驟、最後退火步驟、壓延完成步驟等之製造流程為基本步驟。 That is, including a dissolution step, a casting step, a homogenization heat treatment step, an inter-heat rolling step, a water cooling step, a face turning step, a first (intermediate) cold rolling step, a first intermediate annealing step, and a second intermediate cooling step The manufacturing process of the second intermediate annealing step, the third intermediate cooling step, the final annealing step, the calendering completion step, and the like is a basic step.

一般來說,中間退火步驟的目的是藉由將組織進行再結晶化、並使軟化,以將因加工產生硬化、難以再進行加工的材料,形成可進行加工之狀態。 In general, the purpose of the intermediate annealing step is to form a process that can be processed by recrystallizing the structure and softening it to cause the material to be hardened by processing and difficult to be processed.

銅合金之再結晶溫度雖與合金之溫度有差異,不過其 約為150~800℃(此處未滿800℃)。 Although the recrystallization temperature of the copper alloy is different from the temperature of the alloy, its It is about 150~800°C (here less than 800°C).

本發明之實施形態中,欲控制低的RDW位向不僅為再結晶之優先成長位向,而且即使進行壓延,於不轉動狀態下也具有容易殘留的傾向。 In the embodiment of the present invention, the RDW position to be controlled to be low tends to be not only the preferential growth direction of the recrystallization, but also tends to remain in the non-rotation state even if the rolling is performed.

因此,於第12步驟ST12之最後退火中必須減少組織中之RDW位向。 Therefore, the RDW orientation in the tissue must be reduced in the final annealing of the 12th step ST12.

根據本實施形態之壓延銅箔20之製造方法,第10步驟ST10之第2中間退火步驟中,藉由將升溫速度設定為2℃/秒以上、且到達溫度為80℃以上,可進行此控制。 According to the method for producing a rolled copper foil 20 of the present embodiment, in the second intermediate annealing step of the tenth step ST10, the temperature rise rate can be set to 2 ° C /sec or more, and the temperature can be 80 ° C or higher. .

再結晶過程中之優先位向的形成可認為是受每個結晶位向之恢復速度的不同的影響,但其是為了藉由提高升溫速度、不給予產生再結晶前驅現象的時間、以及因到達溫度的高溫化而抑制特定之結晶邊界的優先移動,來獲得之隨機化再結晶組織。 The formation of the preferential orientation during recrystallization can be considered to be affected by the difference in the recovery rate of each crystallographic position, but it is to increase the temperature increase rate, not to give the recrystallization precursor phenomenon, and to arrive. The temperature is increased to suppress the preferential movement of a specific crystal boundary to obtain a randomized recrystallized structure.

退火速度較佳範圍係5℃/秒以上,更加為10℃/秒以上。在此雖不設定上限值,但最高為200℃/秒。 The annealing speed is preferably in the range of 5 ° C / sec or more, more preferably 10 ° C / sec or more. Although the upper limit is not set here, the maximum is 200 ° C / sec.

到達溫度較佳範圍係870℃以上,更加為950℃以上。上限值是材料會顯著發生高溫脆性的1000℃。 The preferred temperature range is 870 ° C or higher, and more preferably 950 ° C or higher. The upper limit is 1000 ° C where the material will exhibit high temperature brittleness.

於第12步驟ST12之最後退火中進行此隨機化再結晶熱處理時,因結晶粒粗大為表面龜裂與邊角龜裂的原因,因此不欲進行。因此,最後退火後之結晶粒徑較佳為30μm以下。 When this randomized recrystallization heat treatment is performed in the final annealing in the twelfth step ST12, since the coarse crystal grains are caused by surface cracks and cracks in the corners, they are not intended to be carried out. Therefore, the crystal grain size after the final annealing is preferably 30 μm or less.

〔合金成份〕 [alloy composition]

上述結晶位向控制的效果可適用於各種合金。 The above-described effect of controlling the crystal orientation can be applied to various alloys.

而且,銅箔之必要的特性會因電池整體的設計而相異,較佳係因應此特性來選擇適當的合金。壓延箔之強度與導電性為此消彼漲的關係,各合金之特性列於表格1中。 Moreover, the necessary characteristics of the copper foil may vary depending on the overall design of the battery, and it is preferable to select an appropriate alloy in response to this characteristic. The relationship between the strength and electrical conductivity of the calendered foil is the same, and the properties of each alloy are listed in Table 1.

表格1中,本實施形態之Cu-(Cr,Zr)系銅合金之拉伸強度為400~700MPa,導電性表示為70~95% IACS(International Annealed Copper Standard;國際退火銅標準)。 In Table 1, the Cu-(Cr, Zr)-based copper alloy of the present embodiment has a tensile strength of 400 to 700 MPa, and the conductivity is 70 to 95% IACS (International Annealed Copper Standard; International Annealed Copper Standard).

在此,所謂70% IACS係表示以電阻率IACS(國際退火銅標準)之「標準退火銅」為100%時的導線,其具有70%導電性。 Here, the 70% IACS system is a wire having 100% conductivity when the "standard annealed copper" of the resistivity IACS (International Annealing Copper Standard) is 100%.

此Cu-(Cr,Zr)系銅合金之導電性為70~95% IACS,電氣特性也良好。 The Cu-(Cr, Zr)-based copper alloy has an electrical conductivity of 70 to 95% IACS and has good electrical properties.

同樣地,本實施形態之Cu-Ag系銅合金之拉伸強度為350~550MPa,導電性表示為80~98% IACS。 Similarly, the Cu-Ag-based copper alloy of the present embodiment has a tensile strength of 350 to 550 MPa and an electrical conductivity of 80 to 98% IACS.

此Cu-Ag系銅合金具有導電性為80~98% IACS之高電氣特性。 This Cu-Ag-based copper alloy has high electrical conductivity of 80 to 98% IACS.

本實施形態之Cu-Sn系銅合金之拉伸強度為400~750MPa,導電性表示為15~95% IACS。 The Cu-Sn-based copper alloy of the present embodiment has a tensile strength of 400 to 750 MPa and an electrical conductivity of 15 to 95% IACS.

此Cu-Sn系銅合金之導電性為15~95%之大的差異範 圍,但藉由最適化主成份與副添加成份之成份添加量,可獲得高的電氣(電池)特性。 The conductivity of this Cu-Sn-based copper alloy is 15 to 95% different. However, high electrical (battery) characteristics can be obtained by optimizing the amount of ingredients added to the main component and the sub-additive component.

本實施形態之Cu-Ni-Si系銅合金之拉伸強度為600~1000MPa,導電性表示為20~50% IACS。 The Cu-Ni-Si-based copper alloy of the present embodiment has a tensile strength of 600 to 1000 MPa and a conductivity of 20 to 50% IACS.

此Cu-Ni-Si系銅合金之導電性為20~50%之稍微低的導電性,但藉由最適化主成份與副添加成份之成份添加量,得知可獲得因應其用途之電氣(電池)特性。 The conductivity of the Cu-Ni-Si-based copper alloy is slightly lower than that of 20 to 50%. However, by optimizing the amount of the main component and the sub-additive component, it is known that electrical properties can be obtained according to the purpose ( Battery) characteristics.

本實施形態之純銅系(TPC)銅材料之拉伸強度為350~550MPa,導電性表示為95~100% IACS。 The pure copper-based (TPC) copper material of the present embodiment has a tensile strength of 350 to 550 MPa and a conductivity of 95 to 100% IACS.

此純銅系銅材料得知具有導電性為95~100% IACS之高電氣特性。 This pure copper-based copper material is known to have a high electrical conductivity of 95 to 100% IACS.

當超過上述各個(1)~(5)之銅合金之規定上限成份進行添加的話,則會以氧化物、析出物、結晶物等形態,以次微米大小之粗大的第2相分散,進行壓延至12μm以下厚度時,由於會造成針孔與斷裂的原因,故不推薦如此進行。此外,又因會有導電性顯著降低的情形,故不推薦。 When the predetermined upper limit component of the copper alloy of each of the above (1) to (5) is added, the second phase is dispersed in the form of an oxide, a precipitate, or a crystal, and the second phase is dispersed. When it is extended to a thickness of 12 μm or less, it is not recommended because it causes pinholes and breakage. In addition, it is not recommended because of the significant decrease in conductivity.

此外,當未滿上述各個(1)~(5)之銅合金之規定下限成份進行添加的話,則無法獲得充分的添加效果。成份添加量最好因應上述用途來進行適當的調整。 Further, when the predetermined lower limit component of the copper alloys of the above (1) to (5) is not added, sufficient addition effect cannot be obtained. It is preferable that the amount of the component to be added is appropriately adjusted in accordance with the above use.

Cu-(Cr,Zr)系銅合金中所含之主成份Cr與Zr之總含量較佳為0.15~0.43質量%,更佳為0.22~0.31質量%。 The total content of the main components Cr and Zr contained in the Cu-(Cr, Zr)-based copper alloy is preferably from 0.15 to 0.43 mass%, more preferably from 0.22 to 0.31 mass%.

Cu-Ag系之主成份Ag之含量較佳為0.02~0.15質量%,更佳為0.03~0.05質量%。 The content of Ag as a main component of the Cu-Ag system is preferably 0.02 to 0.15 mass%, more preferably 0.03 to 0.05 mass%.

Cu-Sn系之主成份Sn之含量較佳為0.1~2.3質量%, 更佳為0.6~0.9質量%。 The content of the main component Sn of the Cu-Sn system is preferably 0.1 to 2.3% by mass. More preferably, it is 0.6 to 0.9% by mass.

Cu-Ni-Si系之主成份Ni之含量較佳為2.1~4.2質量%,更佳為3.4~3.9質量%。 The content of the main component Ni of the Cu-Ni-Si system is preferably from 2.1 to 4.2% by mass, more preferably from 3.4 to 3.9% by mass.

除了上述主成份外,為了提高強度與耐熱性等,可添加Sn、Zn、Si、Mn、Mg、P等之副添加元素。 In addition to the above main components, in order to improve strength, heat resistance, and the like, a sub-additive element such as Sn, Zn, Si, Mn, Mg, or P may be added.

尤其,至箔厚12μm以下的壓延中,藉由Si、Mg、P等的添加,可對熔融金屬進行脫氧、抑制氧化物的形成,而且,藉由Mn的添加以抑制硫化物的形成等等,均可有效地解決因內部第2相所產生之針孔問題。 In particular, in the rolling to a thickness of 12 μm or less, the addition of Si, Mg, P, or the like can deoxidize the molten metal, suppress the formation of the oxide, and suppress the formation of sulfide by the addition of Mn. , can effectively solve the pinhole problem caused by the internal second phase.

比起純銅系,包含較多添加元素之合金系具有形成較多RDW位向的趨勢。這是因為壓延集合組織由純銅轉成黃銅之緣故。 Alloys containing more added elements have a tendency to form more RDW orientations than pure copper. This is because the calendered assembly is converted from pure copper to brass.

因此,本發明實施形態中,愈是高濃度之合金,其效果愈顯著。亦即,本發明之實施形態所適用之較佳合金為Cu-Ag系,更佳之為合金為Cu-Sn系、Cu-Ni-Si系、與Cu-Cr系。 Therefore, in the embodiment of the present invention, the higher the concentration of the alloy, the more remarkable the effect. That is, the preferred alloy to which the embodiment of the present invention is applied is a Cu-Ag system, and more preferably, the alloy is a Cu-Sn system, a Cu-Ni-Si system, and a Cu-Cr system.

另外,本實施形態尤其以12μm以下厚度之銅箔為例,但亦可適用於以12μm以上之銅箔。 Further, in the present embodiment, a copper foil having a thickness of 12 μm or less is used as an example, but it may be applied to a copper foil having a thickness of 12 μm or more.

〔實施例〕 [Examples]

以下將對本發明之具體實施例進行說明。 Specific embodiments of the invention are described below.

實施例之結果表示於下列之表格2~表格6中。 The results of the examples are shown in Tables 2 to 6 below.

Cu-(Cr,Zr)系之實施例之評估結果列於表格2、Cu-Ag系之實施例之評估結果列於表格3、Cu-Sn系之實施例之評估結果列於表格4、Cu-Ni-Si系之實施例之評估結果列於 表格5、純銅系之實施例之評估結果列於表格6中。 The evaluation results of the examples of the Cu-(Cr, Zr) system are shown in Table 2. The evaluation results of the examples of the Cu-Ag system are shown in Table 3. The evaluation results of the examples of the Cu-Sn system are shown in Table 4, Cu. The results of the evaluation of the -Ni-Si system are listed in The results of the evaluation of the examples in Table 5 and pure copper are listed in Table 6.

於表格2~表格6中亦將上述(1)~(5)之之銅合金實施例之評估結果與參考例與比較例作比較。 The evaluation results of the copper alloy examples of the above (1) to (5) are also compared with the reference examples and the comparative examples in Tables 2 to 6.

此處於說明表格2~表格6之實施例之評估結果前,先對本實施形態與比較例之壓延銅箔之製造方法、對粗糙化電鍍前之壓延銅箔的評估方法、與電池評估方法等作說明。 Before describing the evaluation results of the examples in Tables 2 to 6, the method for producing the rolled copper foil of the present embodiment and the comparative example, the method for evaluating the rolled copper foil before roughening plating, and the battery evaluation method are used. Description.

〔壓延銅箔之製造方法〕 [Manufacturing method of rolled copper foil]

此處將參照圖3,對本實施形態之實施例的壓延銅箔之製造方法進行說明。 Here, a method of manufacturing a rolled copper foil according to an embodiment of the present embodiment will be described with reference to Fig. 3 .

於第1步驟ST1中,以高頻熔爐使原料熔解,熔解後之原料於第2步驟ST2中以0.1~100℃/秒之冷卻速度進行鑄造,以製得鑄塊。鑄塊含有如表格2~表格6所示之合金成份,剩餘部分由Cu與不可避免之不純物所形成。 In the first step ST1, the raw material is melted in a high-frequency melting furnace, and the melted raw material is cast in a second step ST2 at a cooling rate of 0.1 to 100 ° C / sec to obtain an ingot. The ingot contains the alloy composition as shown in Tables 2 to 6, and the remainder is formed by Cu and inevitable impurities.

於第3步驟ST3中,對於第2步驟ST2中所得之鑄塊,於800~1030℃之溫度下進行5分至10小時的均質化熱處理,以其狀態下於第4步驟ST4中進行熱間壓延。 In the third step ST3, the ingot obtained in the second step ST2 is subjected to a homogenization heat treatment at a temperature of 800 to 1030 ° C for 5 minutes to 10 hours, and in the state thereof, the heat is performed in the fourth step ST4. Calendering.

於第4步驟ST4進行熱間加工後,於第5步驟ST5中進行水冷卻,於第6步驟ST6中進行面車削,用以去除氧化鏽皮。 After the hot working is performed in the fourth step ST4, the water is cooled in the fifth step ST5, and the surface turning is performed in the sixth step ST6 to remove the scale.

其後,於第7步驟ST7中進行第一(中間)冷間壓延,於第8步驟ST8中進行第一中間退火,於第9步驟ST9中進行第二中間冷間壓延。而且,進而於第10步驟ST10中進行第二中間退火,於第11步驟ST11中進行第三中間冷間壓延,於第12步驟ST12中進行最後退火,於第13步驟 ST13中進行壓延完成步驟,以製作箔厚為12μm以下之壓延箔。 Thereafter, the first (intermediate) cold rolling is performed in the seventh step ST7, the first intermediate annealing is performed in the eighth step ST8, and the second intermediate cold rolling is performed in the ninth step ST9. Further, in the tenth step ST10, the second intermediate annealing is performed, the third intermediate cold rolling is performed in the eleventh step ST11, and the final annealing is performed in the twelfth step ST12. The step of calendering is carried out in ST13 to produce a rolled foil having a foil thickness of 12 μm or less.

第7步驟ST7之第一(中間)冷間壓延、第9步驟ST9之第二中間冷間壓延、於第11步驟ST11之第三中間冷間壓延、及第13步驟ST13之壓延完成步驟之各壓延加工係以66~99%之箔厚減少率來進行。 The first (intermediate) cold rolling in the seventh step ST7, the second intermediate cold rolling in the ninth step ST9, the third intermediate cold rolling in the eleventh step ST11, and the calendering completion step in the thirteenth step ST13 The calendering process is carried out at a foil thickness reduction rate of 66 to 99%.

第8步驟ST8之第一中間退火、與第12步驟ST12之最後退火的退火熱處理,係於一般的再結晶溫度之300℃以上、未滿800℃之溫度下維持3秒鐘~10小時。 The first intermediate annealing in the eighth step ST8 and the annealing heat treatment in the final annealing in the twelfth step ST12 are maintained at a temperature of 300 ° C or more and less than 800 ° C at a normal recrystallization temperature for 3 seconds to 10 hours.

其中,第10步驟ST10之第二中間退火係以2℃/秒以上之升溫速度、且到達溫度為800℃以上、1000℃以下的條件來進行。 Here, the second intermediate annealing in the tenth step ST10 is carried out under the conditions of a temperature increase rate of 2 ° C /sec or more and a temperature of 800 ° C or more and 1000 ° C or less.

各熱處理與壓延後,因應材料表面的氧化與粗糙度等狀態,來進行氧清除與表面研磨,而且,因應形狀,以張力平整機來進行矯正。 After each heat treatment and rolling, oxygen removal and surface grinding are performed in accordance with the state of oxidation and roughness of the surface of the material, and the shape is adjusted by a tension leveler.

將上述本實施形態之製造方法的例子稱為步驟A。 An example of the production method of the above embodiment is referred to as step A.

此外,表2~表6中之比較例如圖8所示,以下列之步驟E~I中任一步驟來製作。 Further, the comparisons in Tables 2 to 6 are as shown in Fig. 8, and are produced by any of the following steps E to I.

〔步驟E〕 [Step E]

步驟E除了將第10步驟ST10之第二中間退火之升溫速度設定為0.2~1.8℃/秒、且到達溫度設定為300℃以上、未滿800℃以下外,其餘均與步驟A相同。 Step E is the same as step A except that the temperature increase rate of the second intermediate annealing in the tenth step ST10 is set to 0.2 to 1.8 ° C / sec, and the reaching temperature is set to 300 ° C or more and less than 800 ° C or less.

〔步驟F〕 [Step F]

步驟F除了將第10步驟ST10之第二中間退火之升溫 速度設定為0.2~1.8℃/秒、且到達溫度設定為800~1000℃外,其餘均與步驟A相同。 Step F except for the second intermediate annealing of the tenth step ST10 The speed is set to 0.2 to 1.8 ° C / sec, and the arrival temperature is set to 800 ~ 1000 ° C, the rest are the same as step A.

〔步驟G〕 [Step G]

步驟G除了將第10步驟ST10之第二中間退火之升溫速度設定為0.2℃/秒以上、且到達溫度設定為300℃以上、未滿800℃以下外,其餘均與步驟A相同。 Step G is the same as step A except that the temperature increase rate of the second intermediate annealing in the tenth step ST10 is set to 0.2 ° C /sec or more, and the reaching temperature is set to 300 ° C or more and less than 800 ° C or less.

〔步驟H〕(日本專利公開公報第2000-328159號中所述之方法) [Step H] (method described in Japanese Patent Laid-Open Publication No. 2000-328159)

於第H步驟中,以電爐於大氣中於木炭的被覆下進行熔解,以熔製成50mm x 80mm x 180mm的鑄塊,對此進行熱間壓延,以形成厚度為15mm之厚塊,之後於820℃下進行熱間壓延以形成厚度為3.3mm之板材後,進行水冷卻。 In the H step, the electric furnace is melted under the coating of charcoal in the atmosphere to melt into an ingot of 50 mm x 80 mm x 180 mm, which is heat-calendered to form a thick piece having a thickness of 15 mm, and then After hot-rolling at 820 ° C to form a sheet having a thickness of 3.3 mm, water cooling was performed.

關於這些板材,對厚度1.2mm者進行冷間壓延後以爐溫750℃ x20s之條件進行中間退火、對厚度0.4mm者進行冷間壓延後以爐溫700℃ x20s之條件進行中間退火、對厚度0.2mm者進行冷間壓延後以爐溫650℃ x20s之條件進行中間退火,接著再進行冷間壓延,以製作厚度為10μm之銅合金箔。 For these sheets, the thickness of 1.2 mm is subjected to cold rolling, and the intermediate annealing is performed at a furnace temperature of 750 ° C for x 20 s, and the thickness is 0.4 mm for cold rolling, and then the intermediate annealing is performed at a furnace temperature of 700 ° C for x 20 s. The 0.2 mm was subjected to cold rolling, and then annealed at a furnace temperature of 650 ° C for x 20 s, followed by cold rolling to prepare a copper alloy foil having a thickness of 10 μm.

此步驟H揭露於專利文獻4(日本專利公開公報第2000-328159號)中。 This step H is disclosed in Patent Document 4 (Japanese Patent Laid-Open Publication No. 2000-328159).

〔步驟I〕(日本專利公開公報平成第11-310864號中所述之方法) [Step I] (method described in Japanese Patent Laid-Open Publication No. Hei 11-310864)

步驟I中,對鑄塊進行均熱處理後,以500℃之結束溫度進行熱間壓延,接著,採用支配銅箔結晶位向之冷間 壓延與最後退火之各步驟條件,於最後退火前之冷間壓延率10~95%、最後退火溫度400℃以上、最後退火後之冷間壓延率10~99%之範圍進行製造。 In the step I, after the ingot is subjected to the soaking treatment, the inter-heat rolling is performed at the end temperature of 500 ° C, and then, the crystal grain of the copper foil is used to cool the room. The conditions of each step of rolling and final annealing are carried out in the range of 10 to 95% of the cold rolling ratio before the final annealing, the final annealing temperature of 400 ° C or more, and the cold rolling ratio after the final annealing of 10 to 99%.

此步驟I揭露於專利文獻5(日本專利公開公報平成第11-310864號)中。 This step I is disclosed in Patent Document 5 (Japanese Patent Laid-Open Publication No. Hei 11-310864).

對粗糙化電鍍前之壓延銅箔進行下列的測試。其測試結果列於表格2~表格6中。 The following test was performed on the rolled copper foil before roughening plating. The test results are listed in Table 2 to Table 6.

〔條狀凹凸區域之面積比:AR1〕 [Area ratio of strip-shaped concave and convex areas: AR1]

條狀凹凸區域之面積比AR1係於光學顯微鏡照片中,將對壓延方向60°~120°之方向確認條狀凹凸的區域塗黑,其後進行影像處理以將其進行黑白2色色層化,其黑色面積除以整個面積即為面積比。觀察視野的面積為200,000平方微米,此為量測三個視野之平均值。 In the optical micrograph, the area ratio of the strip-shaped uneven area is AR1, and the area where the strip-shaped unevenness is confirmed in the direction of the rolling direction of 60° to 120° is blackened, and then image processing is performed to perform black and white color gradation. The black area divided by the entire area is the area ratio. The area of the field of view is 200,000 square microns, which is the average of the three fields of view.

〔RDW位向面積比:AR2〕 [RDW bit-to-area ratio: AR2]

RDW位向面積比AR2係以上述EBSD法,利用上述方法由壓延表面進行測量。若因壓延表面之加工變質層厚而使圖案不鮮明時,可以化學研磨僅溶解最表面層來進行測量。 The RDW orientation area ratio AR2 was measured by the above-described method from the calendered surface by the above-described EBSD method. When the pattern is not clear due to the thickness of the processed surface of the rolled surface, the measurement can be performed by chemically grinding only the outermost layer.

〔拉伸強度(TS)、延伸率(EL)〕 [tensile strength (TS), elongation (EL)]

拉伸強度(TS)、與延伸率(EL)係根據JIS Z2241,以平行壓延方向之拉伸測試來進行測量。 Tensile strength (TS) and elongation (EL) were measured in a tensile test in the direction of parallel rolling according to JIS Z2241.

〔導電性(EC)〕 [Electrical conductivity (EC)]

於保持20℃(±0.5℃)之恆溫槽中,利用四探針法測量比電阻率,以算出導電率。此外,探針間之距離為100mm。 The specific resistivity was measured by a four-probe method in a thermostat maintained at 20 ° C (± 0.5 ° C) to calculate the conductivity. In addition, the distance between the probes is 100 mm.

其後,以下列方法製作電池,並對其電池特性作評估。 Thereafter, a battery was fabricated in the following manner, and its battery characteristics were evaluated.

〔粗糙化電鍍之方法〕 [Method of roughening plating]

對壓延後之銅箔表面上之微細粗糙化粒子,以下列之銅電鍍條件來進行。 The finely roughened particles on the surface of the rolled copper foil were subjected to the following copper plating conditions.

<電解槽組成> <Electrolysis cell composition>

Cu(金屬):60~70 g/L Cu (metal): 60~70 g/L

硫酸:110~130 g/L Sulfuric acid: 110~130 g/L

<電解條件> <Electrolysis conditions>

溫度:45~55℃ Temperature: 45~55°C

電流密度:60~70 A/dm2 Current density: 60~70 A/dm 2

處理時間:0.4~2.0秒 Processing time: 0.4~2.0 seconds

〔電池測試1:碳系之負極活性物質〕 [Battery test 1: Carbon-based anode active material]

(i)正極 (i) positive electrode

混合LiCoO2粉90重量%、石墨粉7重量%、聚偏氯乙烯3重量%,其後添加以N-甲基吡咯酮溶解於乙醇所製備之溶液進行混合,以製備正極劑漿體。於鋁箔上均勻地塗上此漿體後,於氮氣中進行乾燥使乙醇揮發,然後進行滾輪壓延,以製作箔片。 90% by weight of LiCoO 2 powder, 7% by weight of graphite powder, and 3% by weight of polyvinylidene chloride were mixed, and then a solution prepared by dissolving N-methylpyrrolidone in ethanol was added and mixed to prepare a positive electrode slurry. After uniformly coating the slurry on the aluminum foil, it was dried in nitrogen to volatilize the ethanol, and then rolled by a roller to prepare a foil.

將此薄片切斷後,對其一端以超音波熔接上鋁箔引腳,以作為組裝正極。 After the sheet was cut, the aluminum foil pin was ultrasonically welded to one end thereof to assemble the positive electrode.

(ii)負極 (ii) Negative electrode

混合天然石墨粉(平均粒徑10μm)90重量%、聚偏氯乙烯10重量%,其後添加以N-甲基吡咯酮溶解於乙醇所製備之溶液進行混合,以製備漿體。接著,將此漿體塗佈於於實施例、比較例中所製作之壓延銅箔的兩表面上後,於 氮氣中對塗佈後之銅箔進行乾燥,使溶劑揮發,然後進行滾輪壓延,以進行箔片的成型。 90% by weight of natural graphite powder (average particle diameter: 10 μm) and 10% by weight of polyvinylidene chloride were mixed, and then a solution prepared by dissolving N-methylpyrrolidone in ethanol was added and mixed to prepare a slurry. Next, the slurry was applied onto both surfaces of the rolled copper foil produced in the examples and the comparative examples, and then The coated copper foil was dried in nitrogen to volatilize the solvent, and then rolled by a roller to form a foil.

將此薄片切斷後,對其一端以超音波熔接上鋁箔引腳,以作為組裝負極。 After the sheet was cut, the aluminum foil pin was ultrasonically welded to one end thereof to assemble the negative electrode.

(iii)電池的組裝 (iii) Assembly of the battery

於以上述方法所製造之正極與負極間,夾著厚度為25μm之聚丙烯所製之隔板,將此收納於軟鋼表面上電鍍上鎳的電池罐中,於罐底部進行負極引腳的點熔接。接著,置放於絕緣材之上蓋上,插入緩衝材後進行正極引腳、與鋁製安全閥的超音波熔接,以進行連接,然後,將由碳酸丙烯酯、碳酸二乙酯、與碳酸乙烯酯所組成之非水電解液注入電池罐中後,對上述安全閥安裝蓋子,以組裝成密閉結構之鋰離子二次電池。 A separator made of polypropylene having a thickness of 25 μm was interposed between the positive electrode and the negative electrode produced by the above method, and this was placed in a battery can plated with nickel on the surface of the soft steel, and the negative electrode pin was placed at the bottom of the can. Welding. Next, it is placed on the cover of the insulating material, inserted into the buffer material, and then ultrasonically welded to the positive electrode lead and the aluminum safety valve to be connected, and then, the propylene carbonate, diethyl carbonate, and ethylene carbonate are used. After the non-aqueous electrolyte solution was injected into the battery can, a lid was attached to the above-mentioned safety valve to assemble a lithium ion secondary battery having a hermetic structure.

(iv)電池特性的測定 (iv) Determination of battery characteristics

對上述所製作之電池,進行以50mA的充電電流至4.2V進行充電、再以50mA至2.5V進行放電之循環為1個循環的充放電循環測試。初次充電時之電池容量列於表格2~表格6中。 The battery produced above was subjected to a charge and discharge cycle test in which a charge of 50 mA was charged to 4.2 V and a cycle of discharging at 50 mA to 2.5 V was performed for one cycle. The battery capacity at the time of initial charge is listed in Table 2 to Table 6.

〔電池測試2:矽系之負極活性物質〕 [Battery test 2: negative electrode active material of lanthanide system]

(i)正極 (i) positive electrode

利用Li2CO3與CoCO3為起始原料,量秤Li:Co之原子比為1:1的原料於研缽中混合,於模具中進行重壓、加壓成型後,於空氣中以800℃進行24個小時的燒成,而製得Li2CoO2之燒成體。將其於研缽中搗碎,使其形成平均粒徑 20μm之粉末。 Using Li 2 CO 3 and CoCO 3 as starting materials, the raw material of the Li:Co atomic ratio of 1:1 is mixed in a mortar, and subjected to heavy pressing and pressure molding in a mold, and then 800 in air. The firing was carried out for 24 hours at ° C to obtain a fired body of Li 2 CoO 2 . This was mashed in a mortar to form a powder having an average particle diameter of 20 μm.

將所得到之Li2CoO2粉90重量比份、作為導電劑之人工石墨粉5重量比份,混合於包含作為黏合劑之聚偏氯乙烯5重量比份之5重量%之N-甲基吡咯酮溶液,以製備成正極混合漿體。 90 parts by weight of the obtained Li 2 CoO 2 powder, 5 parts by weight of artificial graphite powder as a conductive agent, and 5 parts by weight of N-methyl group containing 5 parts by weight of polyvinylidene chloride as a binder A solution of pyrrolidone to prepare a positive electrode mixed slurry.

將此正極混合漿體塗於作為集電體之鋁箔上,進行乾燥後進行壓延。對此進行切割後,作為正極。 This positive electrode mixture slurry was applied onto an aluminum foil as a current collector, dried, and then rolled. After cutting this, it was used as a positive electrode.

(ii)負極 (ii) Negative electrode

將作為活性物質、平均粒徑為3μm之矽粉(純度為99.9%)80.2重量比份,混合於包含作為黏合劑之聚醯胺酸(黏合劑α 1)19.8重量比份之8.6重量%之N-甲基吡咯酮溶液,以製備成負極混合漿體。 80.2 parts by weight of an antimony powder (purity: 99.9%) having an average particle diameter of 3 μm as an active material, and mixed with 8.6% by weight of 19.8 parts by weight of polyglycine (adhesive α 1) as a binder A solution of N-methylpyrrolidone was prepared to prepare a negative electrode mixed slurry.

將此負極混合漿體塗佈於實施例、比較例中所製作之壓延銅箔上,進行乾燥後進行壓延。之後,對此於氬氣中於400℃下進行30個小時的熱處理、進行燒結,以作為負極。 This negative electrode mixture slurry was applied onto the rolled copper foil produced in the examples and the comparative examples, dried, and then rolled. Thereafter, this was subjected to heat treatment at 400 ° C for 30 hours in argon gas, followed by sintering to obtain a negative electrode.

(iii)電池的組裝 (iii) Assembly of the battery

於碳酸亞乙酯與碳酸二乙酯等體積混合的溶劑中添加以LiPF6溶解於1莫耳/升之溶液中,以製作電解液。利用上述正極、負極與電解液,來製作鋰二次電池。 To a volume-mixed solvent such as ethylene carbonate and diethyl carbonate, LiPF 6 was dissolved in a solution of 1 mol/liter to prepare an electrolytic solution. A lithium secondary battery was produced using the above positive electrode, negative electrode, and electrolytic solution.

正極與負極間隔著隔板相對配置。 The positive electrode and the negative electrode are arranged opposite to each other with a separator interposed therebetween.

(iv)電池特性的測定 (iv) Determination of battery characteristics

對上述電池進行充放電循環特性的評估。將上述各電池,於25℃下,進行以1mA的電流至4.2V進行充電後、 再以1mA至2.75V進行放電、將此設為1個循環之充放電測試。相對於第1循環之放電容量,測量50次循環後的放電容量,以計算出放電容量維持率。 The battery was evaluated for charge and discharge cycle characteristics. After charging each of the above batteries at a current of 1 mA to 4.2 V at 25 ° C, The discharge was further carried out at 1 mA to 2.75 V, and this was set as a charge and discharge test for one cycle. The discharge capacity after 50 cycles was measured with respect to the discharge capacity of the first cycle to calculate the discharge capacity retention rate.

其測試結果列於表格2~表格6中。 The test results are listed in Table 2 to Table 6.

以下如各表格中所示之測試結果,當滿足相對於本發明之實施形態中所定的壓延方向之60°~120°方向之具有條狀圖案的表面凹凸所發現之區域的條狀凹凸區域之面積比AR1為60%以上、且於表面結晶位向中之RDW位向之{012}<100>方向起13°以內之RDW位向面積比AR2為15%以下等之情況時,電池測試中的特性結果相當良好。另一方面,以製造步驟E~I所製造之比較例中,未滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2,電池測試結果不佳。 In the following, as shown in the respective test results, the strip-shaped uneven regions of the region found in the surface irregularities having the stripe pattern in the direction of 60° to 120° in the rolling direction defined in the embodiment of the present invention are satisfied. When the area ratio AR1 is 60% or more, and the RDW position of the surface crystallization position in the direction of {012}<100> is less than or equal to 15%, the area ratio AR2 is 15% or less. The characteristic results are quite good. On the other hand, in the comparative example manufactured by the manufacturing steps E to I, the area ratio AR1 and the RDW orientation area ratio AR2 of the strip-shaped uneven areas were not satisfied, and the battery test result was poor.

相對於如表格6中所示之純銅系,表格2~表格5之合金系表現較佳的電池特性。 The alloys of Tables 2 through 5 exhibited better battery characteristics relative to the pure copper system as shown in Table 6.

表格2中列出Cu-(Cr,Zr)系銅合金之測試結果。 Table 2 lists the test results for Cu-(Cr, Zr) copper alloys.

在此分別對本實施形態之壓延銅箔(本例)以製造步驟A製作之實施例1-1~1-8、以製造步驟A製作之參考例1-11、製造步驟E、F、G、H、I製作之比較例1-21~1-25進行測試。 Here, the rolled copper foil of the present embodiment (in this example) was produced in the production examples in the production steps A to 1-1 to 1-8, in the production step A, the reference examples 1-11, the manufacturing steps E, F, and G, respectively. The test examples 1-21 to 1-25 produced by H and I were tested.

實施例1-1~1-7、比較例1-21~1-25滿足主成分Cr、Zr之總含量為0.01~0.9質量%之條件,也滿足副添加成份Sn、Zn、Si、Mn、Mg之總含量為0.01~0.45質量%之條件。 Examples 1-1 to 1-7 and Comparative Examples 1-21 to 1-25 satisfy the condition that the total content of the main components Cr and Zr is 0.01 to 0.9% by mass, and also satisfy the sub-addition components Sn, Zn, Si, Mn, The total content of Mg is 0.01 to 0.45 mass%.

其中,實施例1-6之副添加成份之總含量為0.52質量%,稍微超過副添加成份總含量為0.01~0.45質量%的條件。 Here, the total content of the sub-addition components of Examples 1-6 was 0.52% by mass, slightly exceeding the condition that the total content of the sub-addition components was 0.01 to 0.45 mass%.

此外,參考例1-11未滿足主成分Cr、Zr之總含量為0.01~0.9質量%的條件。 Further, Reference Example 1-11 did not satisfy the condition that the total content of the main components Cr and Zr was 0.01 to 0.9% by mass.

實施例1-1~1-8滿足條狀凹凸區域之面積比AR1為60%以上之條件。 Examples 1-1 to 1-8 satisfy the condition that the area ratio AR1 of the strip-shaped uneven regions is 60% or more.

實施例1-1~1-8滿足RDW位向面積比AR2為15%以下之條件。 Examples 1-1 to 1-8 satisfy the condition that the RDW orientation area ratio AR2 is 15% or less.

而且,由實施例1-1~1-8之電池測試1之初次充電容量與電池測試2之維持率的值來看,電池測試中之特性結果良好。 Further, from the values of the initial charge capacity of the battery test 1 of Examples 1-1 to 1-8 and the maintenance rate of the battery test 2, the characteristic results in the battery test were good.

另外,如上所述,實施例1-6之副添加成份之總含量為0.52質量%,雖然稍微超過副添加成份總含量為0.01~0.45質量%的條件,不過,電池測試之特性結果良好,可得知主成份含量是否於本實施形態所訂定之範圍內,對電氣特性的影響大。 Further, as described above, the total content of the sub-addition components of Examples 1-6 is 0.52% by mass, although slightly exceeding the condition that the total content of the sub-addition components is 0.01 to 0.45 mass%, the characteristics of the battery test are good, It is known that the content of the main component is within the range defined in the embodiment, and the influence on the electrical characteristics is large.

實施例1-4、1-7雖不含有副添加物,但滿足電池測試。 Examples 1-4 and 1-7 did not contain a sub-additive but satisfied the battery test.

如上所述,參考例1-11之主成分Cr、Zr中Cr之含量為0.93質量%,不滿足主成份之總含量為0.01~0.9質量%之條件。 As described above, the content of Cr in the main components Cr and Zr of Reference Example 1-11 was 0.93% by mass, and the condition that the total content of the main component was not satisfied was 0.01 to 0.9% by mass.

參考例1-11由於針孔多,故停止其製造。 Reference Example 1-11 stopped the manufacture because of the large number of pinholes.

由此參考例1-11之結果可得知,主成份含量是否於本實施形態所訂定之範圍內,對電氣特性的影響大。 From the results of Reference Examples 1 to 11, it can be seen whether or not the content of the main component is within the range defined in the present embodiment, and the influence on the electrical characteristics is large.

比較例1-21之條狀凹凸區域之面積比AR1為45%,未滿足60%以上之條件。比較例1-21之RDW位向面積比AR2為22%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Example 1-21 was 45%, and the condition of 60% or more was not satisfied. The RDW position of Comparative Example 1-21 was 22% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例1-21之電池測試1的初次充電容量為342mAh,比實施例1-1之481mAh低,電池測試2之維持率為16%,也比實施例1-1之36%的一半還低。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 1-21 was 342 mAh, which was lower than 481 mAh of Example 1-1, and the battery test 2 retention rate was 16%, which was also half of the 36% of Example 1-1. Still low.

因此,比較例1-21之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Example 1-21 were inferior to those of the examples.

此結果推斷不是因為製造步驟A,而是因為以第10步驟ST10之第2中間退火之升溫速度設定為0.2~1.8℃/秒、到達溫度為300℃以上、未滿800℃之製造步驟E來製造之緣故。 This result is estimated not because of the manufacturing step A, but because the heating rate of the second intermediate annealing in the tenth step ST10 is set to 0.2 to 1.8 ° C / sec, and the reaching temperature is 300 ° C or higher and less than 800 ° C. The reason for manufacturing.

亦即,由於本製造方法特徵之未將第2中間退火之升溫速度設定為不給予產生再結晶前驅現象時間之升溫速度,而且未將到達溫度設定為比銅合金之再結晶上限溫度高之高溫,以抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,故電池特性低。 That is, the temperature rise rate of the second intermediate annealing is not set to the temperature increase rate at which the recrystallization precursor phenomenon is not given, and the reaching temperature is not set to a higher temperature than the recrystallization upper limit temperature of the copper alloy. In order to suppress the preferential movement of the specific particle size boundary and obtain the randomized recrystallized structure, the area ratio of the strip-shaped uneven area to the AR1 and RDW bit area ratio AR2 cannot be satisfied, so that the battery characteristics are low.

比較例1-22之條狀凹凸區域之面積比AR1為57%,未滿足60%以上之條件。比較例1-22之RDW位向面積比AR2為16%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Example 1-22 was 57%, and the condition of 60% or more was not satisfied. The RDW position of Comparative Example 1-22 was 16% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例1-22之電池測試1的初次充電容量為385mAh,比實施例1-1之481mAh低,電池測試2之維持率為13%,也比實施例1-1之36%的一半還低。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 1-22 was 385 mAh, which was lower than 481 mAh of Example 1-1, and the maintenance rate of Battery Test 2 was 13%, which was also half of that of Example 1-1. Still low.

因此,比較例1-22之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Example 1-22 were inferior to those of the examples.

此推斷是因為本製造方法(步驟A)特徵之第10步驟ST10之第2中間退火中,不提高至不給予產生再結晶前驅現象時間之升溫速度而設定為0.2~1.8℃/秒之緣故。 This is because the second intermediate annealing in the tenth step ST10 of the feature of the manufacturing method (step A) is set to 0.2 to 1.8 ° C / sec without increasing the temperature increase rate for giving the recrystallization precursor phenomenon.

亦即,由於本製造方法(步驟A)特徵之第2中間退火中,即使將到達溫度設定為比銅合金之再結晶上限溫度還高的溫度,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,由於第2中間退火之升溫速度不高,為0.2~1.8℃/秒,故無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 In other words, in the second intermediate annealing characterized by the manufacturing method (step A), even if the reaching temperature is set to a temperature higher than the recrystallization upper limit temperature of the copper alloy, the preferential movement of the specific particle size boundary is suppressed, and Obtaining a randomized recrystallized structure, since the temperature rise rate of the second intermediate annealing is not high, it is 0.2 to 1.8 ° C / sec, so the area ratio of the strip-shaped uneven area to the AR1 and RDW orientation area ratio AR2 cannot be satisfied, and finally the battery is caused. The characteristics are lower.

比較例1-23之條狀凹凸區域之面積比AR1為52%,未滿足60%以上之條件。比較例1-23之RDW位向面積比AR2為17%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Examples 1 to 23 was 52%, and the condition of 60% or more was not satisfied. The RDW orientation of Comparative Examples 1-23 was 17% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例1-23之電池測試1的初次充電容量為372mAh,比實施例1-1之481mAh低,電池測試2之維持率為16%,也比實施例1-1之36%的一半還低。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 1-23 was 372 mAh, which was lower than 481 mAh of Example 1-1, and the battery test 2 retention rate was 16%, which was also half of the 36% of Example 1-1. Still low.

因此,比較例1-23之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Examples 1-23 were inferior to those of the examples.

此結果推斷不是因為製造步驟A,而是因為本製造方 法(步驟A)特徵之第10步驟ST10之第2中間退火中,不將到達溫度設定為比銅合金之再結晶上限溫度還高的溫度,而設定為300℃以上、未滿800℃之一般溫度,以抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織的緣故。 This result is inferred not because of manufacturing step A, but because of the manufacturer In the second intermediate annealing in the tenth step ST10 of the method (step A), the reaching temperature is not set to a temperature higher than the recrystallization upper limit temperature of the copper alloy, and is set to be 300 ° C or higher and less than 800 ° C. Temperature to suppress preferential movement of specific particle size boundaries and to obtain randomized recrystallized structures.

亦即,由於本製造方法(步驟A)特徵之第2中間退火中,即使將升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度,由於未將到達溫度設定為比銅合金之再結晶上限溫度還高的高溫,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, in the second intermediate annealing characterized by the manufacturing method (step A), even if the temperature increase rate is set to a temperature increase rate at which the recrystallization precursor phenomenon is not given, the reaching temperature is not set to be higher than that of the copper alloy. The high temperature at which the upper limit temperature of the recrystallization is high also suppresses the preferential movement of the specific particle size boundary and obtains the randomized recrystallized structure, so that the area ratio of the strip-shaped uneven area to the AR1 and RDW bit area ratio AR2 cannot be satisfied, and finally This causes the battery characteristics to become low.

比較例1-24之條狀凹凸區域之面積比AR1為51%,未滿足60%以上之條件。比較例1-24之RDW位向面積比AR2為18%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Examples 1 to 24 was 51%, and the condition of 60% or more was not satisfied. The RDW orientation of Comparative Examples 1-24 was 18% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例1-24之電池測試1的初次充電容量為362mAh,比實施例1-1之481mAh低,電池測試2之維持率為17%,也比實施例1-1之36%的一半還低。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 1-24 was 362 mAh, which was lower than 481 mAh of Example 1-1, and the battery test 2 retention rate was 17%, which was also half of the 36% of Example 1-1. Still low.

因此,比較例1-24之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Examples 1-24 were inferior to those of the examples.

此結果推斷不是因為製造步驟A,而是因為本製造方法(步驟A)特徵之最後的第2中間退火中,未將到達溫度設定為比銅合金之再結晶上限溫度還高的溫度,以抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織的緣故。 This result is inferred not because of the manufacturing step A, but because the second intermediate annealing of the last feature of the manufacturing method (step A) does not set the reaching temperature to a temperature higher than the recrystallization upper limit temperature of the copper alloy to suppress The preferential movement of the specific particle size boundary and the randomized recrystallized structure are obtained.

亦即,由於本製造方法(步驟A)特徵之最後中間退火中,由於未將到達溫度設定為比銅合金之再結晶上限溫度還高的高溫,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, in the final intermediate annealing of the feature of the manufacturing method (step A), since the reaching temperature is not set to a high temperature higher than the upper limit temperature of the recrystallization of the copper alloy, the preferential movement of the specific particle size boundary is suppressed, and The randomized recrystallized structure is obtained, so that the area ratio of the strip-shaped uneven areas to the AR1 and RDW orientation area ratio AR2 cannot be satisfied, and eventually the battery characteristics are lowered.

比較例1-25之條狀凹凸區域之面積比AR1為48%,未滿足60%以上之條件。比較例1-25之RDW位向面積比AR2為19%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Examples 1 to 25 was 48%, and the condition of 60% or more was not satisfied. The RDW orientation of Comparative Example 1-25 was 19% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例1-25之電池測試1的初次充電容量為362mAh,比實施例1-1之481mAh低,電池測試2之維持率為21%,也比實施例1-1之36%還低。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 1-25 was 362 mAh, which was lower than 481 mAh of Example 1-1, and the maintenance rate of Battery Test 2 was 21%, which was also lower than 36% of Example 1-1. .

因此,比較例1-25之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Examples 1-25 were inferior to those of the examples.

此結果推斷是因為本製造方法(步驟A)特徵之於最後退火之前,由於本製造方法(步驟A)特徵中,將升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度,而且,為了抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,不進行將到達溫度設定為比銅合金之再結晶上限溫度還高之高溫的第2中間退火之緣故。 This result is inferred because the feature of the present manufacturing method (step A) is before the final annealing, and in the feature of the manufacturing method (step A), the temperature increase rate is set to a temperature increase rate at which the recrystallization precursor phenomenon is not given, and In order to suppress the preferential movement of the specific particle size boundary and obtain the randomized recrystallized structure, the second intermediate annealing which sets the reaching temperature to a higher temperature than the recrystallization upper limit temperature of the copper alloy is not performed.

亦即,由於本製造方法特徵之於最後退火之前,由於本製造方法(步驟A)特徵中,為了抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,不進行將到達溫度設定為比銅合金之再結晶上限溫度還高之高溫的第2中間退火,因此無法滿足條狀凹凸區域之面積比AR1與RDW 位向面積比AR2之條件,最終導致電池特性變低。 That is, since the present manufacturing method is characterized by the final annealing, due to the feature of the manufacturing method (step A), in order to suppress the preferential movement of the specific particle size boundary and obtain the randomized recrystallized structure, the temperature setting is not performed. It is a second intermediate annealing which is higher than the upper limit temperature of the recrystallization of the copper alloy, and thus the area ratio AR1 and RDW of the strip-shaped uneven regions cannot be satisfied. The condition of the orientation ratio AR2 eventually leads to a decrease in battery characteristics.

表格3中列出Cu-Ag系銅合金之測試結果。 Table 3 lists the test results for Cu-Ag copper alloys.

在此分別對本實施形態之壓延銅箔(本例)以製造步驟A製作之實施例2-1~2-5、以製造步驟A製作之參考例2-11、製造步驟G、H、I製作之比較例2-21~2-23進行測試。 Here, the rolled copper foil of the present embodiment (in this example) was produced in the production examples 2-1 to 2-5 produced in the step A, the reference example 2-11 produced in the production step A, and the manufacturing steps G, H, and I. Comparative Example 2-21~2-23 was tested.

實施例2-1~2-5、比較例2-21~2-23滿足主成分Ag之總含量為0.01~0.9質量%之條件,也滿足副添加成份Sn、Zn、Si、Mn、Mg之總含量為0.01~0.45質量%之條件。 Examples 2-1 to 2-5 and Comparative Examples 2-21 to 2-23 satisfy the condition that the total content of the main component Ag is 0.01 to 0.9% by mass, and also satisfy the sub-addition components Sn, Zn, Si, Mn, and Mg. The total content is 0.01 to 0.45 mass%.

其中,參考例2-11之主成份Ag之總含量未滿足0.01~0.9質量%之條件。 In addition, the total content of the main component Ag of Reference Example 2-11 did not satisfy the condition of 0.01 to 0.9% by mass.

實施例2-1~2-5滿足條狀凹凸區域之面積比AR1為60%以上之條件。 Examples 2-1 to 2-5 satisfy the condition that the area ratio AR1 of the strip-shaped uneven regions is 60% or more.

實施例2-1~2-5滿足RDW位向面積比AR2為15%以下之條件。 Examples 2-1 to 2-5 satisfy the condition that the RDW bit orientation area ratio AR2 is 15% or less.

而且,由實施例2-1~2-5之電池測試1之初次充電容量與電池測試2之維持率的值來看,電池測試中之特性結果良好。 Further, from the values of the initial charge capacity of the battery test 1 of Examples 2-1 to 2-5 and the maintenance rate of the battery test 2, the characteristic results in the battery test were good.

如上所述,參考例2-11滿足主成份Ag之含量為0.95質量%,且主成份之總含量為0.01~0.9質量%的條件。 As described above, Reference Example 2-11 satisfies the condition that the content of the main component Ag is 0.95% by mass and the total content of the main components is 0.01 to 0.9% by mass.

參考例2-11由於針孔多,故停止其製造。 Reference Example 2-11 stopped the manufacture because of the large number of pinholes.

由此參考例2-11之結果可得知,主成份含量是否於本實施形態所訂定之範圍內,對電氣特性的影響大。 From the results of Reference Examples 2 to 11, it can be seen whether or not the content of the main component is within the range defined in the present embodiment, and the influence on the electrical characteristics is large.

比較例2-21之條狀凹凸區域之面積比AR1為51%,未滿足60%以上之條件。比較例2-21之RDW位向面積比AR2 為20%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Example 2-21 was 51%, and the condition of 60% or more was not satisfied. RDW bit-to-area ratio AR2 of Comparative Example 2-21 It is 20%, and the condition of 15% or less is not satisfied.

而且,比較例2-21之電池測試1的初次充電容量為355mAh,比實施例2-2之432mAh低,電池測試2之維持率為15%,也比實施例2-2之31%的一半還低。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 2-21 was 355 mAh, which was lower than 432 mAh of Example 2-2, and the maintenance rate of Battery Test 2 was 15%, which was also half of 31% of that of Example 2-2. Still low.

因此,比較例2-21之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Example 2-21 were inferior to those of the examples.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟G來製作之比較例1-23的理由相同。 This reasoning is the same as the reason of Comparative Example 1-23 produced by the manufacturing step G shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2.

亦即,由於本製造方法(步驟A)特徵之第2中間退火中,即使將升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度,由於未將到達溫度設定為比銅合金之再結晶上限溫度還高的高溫,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, in the second intermediate annealing characterized by the manufacturing method (step A), even if the temperature increase rate is set to a temperature increase rate at which the recrystallization precursor phenomenon is not given, the reaching temperature is not set to be higher than that of the copper alloy. The high temperature at which the upper limit temperature of the recrystallization is high also suppresses the preferential movement of the specific particle size boundary and obtains the randomized recrystallized structure, so that the area ratio of the strip-shaped uneven area to the AR1 and RDW bit area ratio AR2 cannot be satisfied, and finally This causes the battery characteristics to become low.

比較例2-22之條狀凹凸區域之面積比AR1為53%,未滿足60%以上之條件。比較例2-22之RDW位向面積比AR2為18%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Example 2-22 was 53%, and the condition of 60% or more was not satisfied. The RDW orientation of Comparative Example 2-22 was 18% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例2-22之電池測試1的初次充電容量為361mAh,比本實施例2-2之432mAh低,電池測試2之維持率為13%,也比實施例2-2之31%的一半還低。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 2-22 was 361 mAh, which was lower than 432 mAh of Example 2-2, and the battery test 2 retention rate was 13%, which was also 31% higher than that of Example 2-2. Half is still low.

因此,比較例2-22之電池測試特性比本實施例差。 Therefore, the battery test characteristics of Comparative Example 2-22 were inferior to those of the present embodiment.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟H來製作之比較例1-24的理由相 同。 This reasoning is based on the reason of Comparative Example 1-24 produced by the manufacturing step H shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2. with.

亦即,由於本製造方法(步驟A)特徵之最後中間退火中,由於未將到達溫度設定為比銅合金之再結晶上限溫度還高的溫度,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, in the final intermediate annealing of the feature of the manufacturing method (step A), since the reaching temperature is not set to a temperature higher than the recrystallization upper limit temperature of the copper alloy, the preferential movement of the specific particle size boundary is suppressed, and The randomized recrystallized structure is obtained, so that the area ratio of the strip-shaped uneven areas to the AR1 and RDW orientation area ratio AR2 cannot be satisfied, and eventually the battery characteristics are lowered.

比較例2-23之條狀凹凸區域之面積比AR1為45%,未滿足60%以上之條件。比較例2-23之RDW位向面積比AR2為20%,未滿足15%以下之條件。 The area ratio of the strip-shaped uneven regions of Comparative Examples 2 to 23 was 45%, and the condition of 60% or more was not satisfied. The RDW orientation of Comparative Example 2-23 was 20% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例2-23之電池測試1的初次充電容量為355mAh,比實施例2-2之432mAh低,電池測試2之維持率為11%,也比實施例2-2之31%的一半還低。 Moreover, the initial charge capacity of Battery Test 1 of Comparative Example 2-23 was 355 mAh, which was lower than 432 mAh of Example 2-2, and the maintenance rate of Battery Test 2 was 11%, which was also half of 31% of Example 2-2. Still low.

因此,比較例2-23之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Examples 2-23 were inferior to those of the examples.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟I來製作之比較例1-25的理由相同。 This reasoning is the same as the reason of Comparative Example 1-25 produced in the manufacturing step I shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2.

亦即,由於本製造方法特徵之進行最後退火之前,由於未進行本製造方法(步驟A)特徵之將升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度、且將到達溫度設定為比銅合金之再結晶上限溫度還高的高溫,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織之第2中間退火,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, since the feature of the present manufacturing method is subjected to the final annealing, the temperature increase rate is set to a temperature increase rate at which the recrystallization precursor phenomenon is not given, and the temperature is set to be reached because the feature of the present manufacturing method (step A) is not performed. In order to suppress the preferential movement of the specific particle size boundary and obtain the second intermediate annealing of the randomized recrystallized structure at a high temperature higher than the upper limit temperature of the recrystallization of the copper alloy, the area ratio AR1 of the strip-shaped uneven region cannot be satisfied. The condition of the RDW to the area ratio AR2 eventually leads to a decrease in battery characteristics.

表格4中列出Cu-Sn系銅合金之測試結果。 Table 4 lists the test results for Cu-Sn copper alloys.

在此分別對本實施形態之壓延銅箔(本例)以製造步驟A製作之實施例3-1~3-6、以製造步驟A製造之參考例3-11、以製造步驟G、H、I製造之比較例3-21~3-23進行測試。 Here, the rolled copper foil of the present embodiment (in this example) was produced in the production examples 3-1 to 3-6 in the production step A, the reference example 3-111 manufactured in the production step A, and the manufacturing steps G, H, and I. The comparative examples 3-21 to 3-23 were manufactured for testing.

實施例3-1~3-6、比較例3-21~3-23滿足主成分Sn之總含量為0.01~4.9質量%之條件,也滿足若副添加成份Zn、Si、P、Mg中任一項時,其總含量為0.01~0.45質量%之條件。 Examples 3-1 to 3-6 and Comparative Examples 3-21 to 3-23 satisfy the condition that the total content of the main component Sn is 0.01 to 4.9 mass%, and it is also satisfied if the sub-addition components Zn, Si, P, and Mg are used. In one case, the total content is 0.01 to 0.45 mass%.

其中,參考例3-11之主成份Sn之總含量未滿足0.01~4.9質量%之條件。 In addition, the total content of the main component Sn of Reference Example 3-11 did not satisfy the condition of 0.01 to 4.9 mass%.

實施例3-1~3-6滿足條狀凹凸區域之面積比AR1為60%以上之條件。 Examples 3-1 to 3-6 satisfy the condition that the area ratio AR1 of the strip-shaped uneven regions is 60% or more.

實施例3-1~3-6滿足RDW位向面積比AR2為15%以下之條件。 Examples 3-1 to 3-6 satisfy the condition that the RDW orientation area ratio AR2 is 15% or less.

而且,由實施例3-1~3-6之電池測試1之初次充電容量與電池測試2之維持率的值來看,電池測試中之特性結果良好。 Further, from the values of the initial charge capacity of the battery test 1 of Examples 3-1 to 3-6 and the maintenance rate of the battery test 2, the characteristic results in the battery test were good.

參考例3-11之主成份Sn含量為5.12質量%,未滿足主成份之含量為0.01~4.9質量%的條件。 The content of the main component Sn in Reference Example 3-11 was 5.12% by mass, and the condition that the content of the main component was not satisfied was 0.01 to 4.9% by mass.

參考例3-11由於針孔多,故停止其製造。 Reference Example 3-11 stopped the manufacture because of the large number of pinholes.

由此參考例3-11之結果可得知,主成份含量是否於本實施形態所訂定之範圍內,對電氣特性的影響大。 From the results of Reference Example 3-11, it was found that whether or not the content of the main component is within the range defined in the present embodiment has a large influence on electrical characteristics.

比較例3-21之條狀凹凸區域之面積比AR1為57%,未滿足60%以上之條件。比較例3-21之RDW位向面積比AR2 為18%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Example 3-21 was 57%, and the condition of 60% or more was not satisfied. Comparative Example 3-21 RDW bitwise area ratio AR2 It is 18%, and the condition of 15% or less is not satisfied.

而且,比較例3-21之電池測試1的初次充電容量為375mAh,比實施例3-1之441mAh低,電池測試2之維持率為15%,也比實施例3-1之31%的一半還低。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 3-21 was 375 mAh, which was lower than 441 mAh of Example 3-1, and the maintenance rate of Battery Test 2 was 15%, which was also half of 31% of that of Example 3-1. Still low.

因此,比較例3-21之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Example 3-21 were inferior to those of the examples.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟G來製作之比較例1-23的理由相同。 This reasoning is the same as the reason of Comparative Example 1-23 produced by the manufacturing step G shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2.

亦即,由於本製造方法(步驟A)特徵之第2中間退火中,即使將升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度,由於未將到達溫度設定為比銅合金之再結晶上限溫度還高的高溫,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, in the second intermediate annealing characterized by the manufacturing method (step A), even if the temperature increase rate is set to a temperature increase rate at which the recrystallization precursor phenomenon is not given, the reaching temperature is not set to be higher than that of the copper alloy. The high temperature at which the upper limit temperature of the recrystallization is high also suppresses the preferential movement of the specific particle size boundary and obtains the randomized recrystallized structure, so that the area ratio of the strip-shaped uneven area to the AR1 and RDW bit area ratio AR2 cannot be satisfied, and finally This causes the battery characteristics to become low.

比較例3-22之條狀凹凸區域之面積比AR1為51%,未滿足60%以上之條件。比較例3-22之RDW位向面積比AR2為22%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Example 3-22 was 51%, and the condition of 60% or more was not satisfied. The RDW position of Comparative Example 3-22 was 22% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例3-22之電池測試1的初次充電容量為375mAh,比實施例3-1之441mAh低,電池測試2之維持率為13%,也比實施例3-1之31%的一半還低。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 3-22 was 375 mAh, which was lower than 441 mAh of Example 3-1, and the battery test 2 retention rate was 13%, which was also 31% of that of Example 3-1. Still low.

因此,比較例3-22之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Example 3-22 were inferior to those of the examples.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟H來製作之比較例1-24的理由相 同。 This reasoning is based on the reason of Comparative Example 1-24 produced by the manufacturing step H shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2. with.

亦即,由於本製造方法(步驟A)特徵之最後中間退火中,由於未將到達溫度設定為比銅合金之再結晶上限溫度還高的溫度,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, in the final intermediate annealing of the feature of the manufacturing method (step A), since the reaching temperature is not set to a temperature higher than the recrystallization upper limit temperature of the copper alloy, the preferential movement of the specific particle size boundary is suppressed, and The randomized recrystallized structure is obtained, so that the area ratio of the strip-shaped uneven areas to the AR1 and RDW orientation area ratio AR2 cannot be satisfied, and eventually the battery characteristics are lowered.

比較例3-23之條狀凹凸區域之面積比AR1為40%,未滿足60%以上之條件。比較例3-23之RDW位向面積比AR2為23%,未滿足15%以下之條件。 The area ratio of the strip-shaped uneven regions of Comparative Examples 3 to 23 was 40%, and the condition of 60% or more was not satisfied. The RDW orientation of Comparative Example 3-23 was 23% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例3-23之電池測試1的初次充電容量為340mAh,比實施例3-1之441mAh低,電池測試2之維持率為11%,也比實施例3-1之31%的一半還低。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 3-23 was 340 mAh, which was lower than 441 mAh of Example 3-1, and the maintenance rate of Battery Test 2 was 11%, which was also 31% of that of Example 3-1. Still low.

因此,比較例3-23之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Examples 3-23 were inferior to those of the examples.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟I來製作之比較例1-25的理由相同。 This reasoning is the same as the reason of Comparative Example 1-25 produced in the manufacturing step I shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2.

亦即,由於本製造方法特徵之進行最後退火之前,由於未進行本製造方法(步驟A)特徵之將升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度、且將到達溫度設定為比銅合金之再結晶上限溫度還高的高溫,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織之第2中間退火步驟,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, since the feature of the present manufacturing method is subjected to the final annealing, the temperature increase rate is set to a temperature increase rate at which the recrystallization precursor phenomenon is not given, and the temperature is set to be reached because the feature of the present manufacturing method (step A) is not performed. In order to suppress the preferential movement of the specific particle size boundary and obtain the second intermediate annealing step of the randomized recrystallized structure at a high temperature higher than the upper limit temperature of the recrystallization of the copper alloy, the area ratio AR1 of the strip-shaped uneven region cannot be satisfied. The condition of the ratio of the RDW to the area ratio AR2 eventually leads to a decrease in battery characteristics.

表格5中列出Cu-Ni-Si系銅合金之測試結果。 The test results of the Cu-Ni-Si copper alloy are listed in Table 5.

在此分別對本實施形態之壓延銅箔(本例)以製造步 驟A製作之實施例4-1~4-8、以製造步驟A製作之參考例4-11、製造步驟G、F、I製作之比較例4-21~4-23進行測試。 Here, the rolled copper foil of this embodiment (this example) is separately manufactured in steps. In the examples 4-1 to 4-8 of the production of the step A, the comparative examples 4-21 to 4-23 produced in the reference example 4-11 and the production steps G, F, and I produced in the production step A were tested.

實施例4-1~4-8、比較例4-21~4-23滿足主成分Ni之含量為1.4~4.8質量%之條件、及主成分Si之含量為0.2~1.3質量%之條件,也滿足副添加成份Sn、Zn、Si、Cr、Mn、Mg、Co之總含量為0.005~0.9質量%之條件。 Examples 4-1 to 4-8 and Comparative Examples 4-21 to 4-23 satisfy the condition that the content of the main component Ni is 1.4 to 4.8% by mass, and the content of the main component Si is 0.2 to 1.3% by mass. The condition that the total content of the sub-additive components Sn, Zn, Si, Cr, Mn, Mg, and Co is 0.005 to 0.9% by mass is satisfied.

其中,參考例4-11之主成份Ni之含量未滿足1.4~4.8質量%之條件。 Among them, the content of the main component Ni of Reference Example 4-11 did not satisfy the condition of 1.4 to 4.8% by mass.

實施例4-1~4-8滿足條狀凹凸區域之面積比AR1為60%以上之條件。 Examples 4-1 to 4-8 satisfy the condition that the area ratio AR1 of the strip-shaped uneven regions is 60% or more.

實施例4-1~4-8滿足RDW位向面積比AR2為15%以下之條件。 Examples 4-1 to 4-8 satisfy the condition that the RDW orientation area ratio AR2 is 15% or less.

而且,由實施例4-1~4-8之電池測試1之初次充電容量與電池測試2之維持率的值來看,電池測試中之特性結果良好。 Further, from the values of the initial charge capacity of the battery test 1 of Examples 4-1 to 4-8 and the maintenance rate of the battery test 2, the characteristic results in the battery test were good.

參考例4-11未滿足主成份Ni、Si中之Ni含量為4.92質量%、且主成份Ni之含量為1.4~4.8質量%的條件。 Reference Example 4-11 did not satisfy the condition that the Ni content in the main component Ni and Si was 4.92 mass%, and the content of the main component Ni was 1.4 to 4.8% by mass.

由此參考例4-11之結果可得知,主成份含量是否於本實施形態所訂定之範圍內,對電氣特性的影響大。 From the results of Reference Examples 4 to 11, it can be seen whether or not the content of the main component is within the range defined in the present embodiment, and the influence on the electrical characteristics is large.

比較例4-21之條狀凹凸區域之面積比AR1為54%,未滿足60%以上之條件。比較例4-21之RDW位向面積比AR2為17%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Example 4-21 was 54%, and the condition of 60% or more was not satisfied. The RDW position of Comparative Example 4-21 was 17% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例4-21之電池測試1的初次充電容量為 381mAh,比實施例4-1之441mAh低,電池測試2之維持率為14%,也比實施例4-1之32%的一半還低。 Moreover, the initial charging capacity of Battery Test 1 of Comparative Example 4-21 was 381 mAh was lower than 441 mAh of Example 4-1, and the battery test 2 retention rate was 14%, which was also lower than half of 32% of Example 4-1.

因此,比較例4-21之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Example 4-21 were inferior to those of the examples.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟G來製作之比較例1-23的理由相同。 This reasoning is the same as the reason of Comparative Example 1-23 produced by the manufacturing step G shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2.

亦即,由於本製造方法(步驟A)特徵之第2中間退火中,即使將升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度,由於未將到達溫度設定為比銅合金之再結晶上限溫度還高的高溫,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, in the second intermediate annealing characterized by the manufacturing method (step A), even if the temperature increase rate is set to a temperature increase rate at which the recrystallization precursor phenomenon is not given, the reaching temperature is not set to be higher than that of the copper alloy. The high temperature at which the upper limit temperature of the recrystallization is high also suppresses the preferential movement of the specific particle size boundary and obtains the randomized recrystallized structure, so that the area ratio of the strip-shaped uneven area to the AR1 and RDW bit area ratio AR2 cannot be satisfied, and finally This causes the battery characteristics to become low.

比較例4-22之條狀凹凸區域之面積比AR1為49%,未滿足60%以上之條件。比較例4-22之RDW位向面積比AR2為21%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Example 4-22 was 49%, and the condition of 60% or more was not satisfied. The RDW position of Comparative Example 4-22 was 21% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例4-22之電池測試1的初次充電容量為351mAh,比本實施例4-1之441mAh低,電池測試2之維持率為13%,也比實施例4-1之32%的一半還低。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 4-22 was 351 mAh, which was lower than 441 mAh of Example 4-1, and the battery test 2 retention rate was 13%, which was also 32% higher than that of Example 4-1. Half is still low.

因此,比較例4-22之電池測試特性比本實施例差。 Therefore, the battery test characteristics of Comparative Example 4-22 were inferior to those of the present embodiment.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之比較例1-22的理由相同。 This inference is the same as the reason of Comparative Example 1-22 shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2.

亦即,由於本製造方法(步驟A)特徵之第2中間退火中,即使將到達溫度設定為比銅合金之再結晶上限溫度 還高的溫度,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,由於第2中間退火之升溫速度不高,為0.2~1.8℃/秒,故無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, in the second intermediate annealing characterized by the manufacturing method (step A), even if the reaching temperature is set to be higher than the recrystallization upper limit temperature of the copper alloy The temperature is also high to suppress the preferential movement of the specific particle size boundary, and the randomized recrystallized structure is obtained. Since the temperature rise rate of the second intermediate annealing is not high, it is 0.2 to 1.8 ° C / sec, so the strip-shaped uneven region cannot be satisfied. The ratio of the area ratio AR1 to the RDW to the area ratio AR2 eventually leads to a decrease in battery characteristics.

比較例4-23之條狀凹凸區域之面積比AR1為43%,未滿足60%以上之條件。比較例4-23之RDW位向面積比AR2為24%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Examples 4 to 23 was 43%, and the condition of 60% or more was not satisfied. The RDW of Comparative Examples 4 to 23 had an area ratio AR2 of 24% and did not satisfy the condition of 15% or less.

而且,比較例4-23之電池測試1的初次充電容量為326mAh,比本實施例4-1之441mAh低,電池測試2之維持率為11%,也比實施例4-1之32%的一半還低。 Moreover, the initial charge capacity of Battery Test 1 of Comparative Example 4-23 was 326 mAh, which was lower than 441 mAh of Example 4-1, and the maintenance rate of Battery Test 2 was 11%, which was also 32% higher than that of Example 4-1. Half is still low.

因此,比較例4-23之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Examples 4-23 were inferior to those of the examples.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟I來製作之比較例1-25的理由相同。 This reasoning is the same as the reason of Comparative Example 1-25 produced in the manufacturing step I shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2.

亦即,由於本製造方法特徵之於最後退火前,由於未進行本製造方法(步驟A)特徵之將升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度、且將到達溫度設定為比銅合金之再結晶上限溫度還高的高溫,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織之第2中間退火步驟,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, since the present manufacturing method is characterized by the fact that the final heating method is performed, the temperature increase rate is set to a temperature increase rate at which the recrystallization precursor phenomenon is not given, and the temperature is set to be reached because the feature of the present manufacturing method (step A) is not performed. In order to suppress the preferential movement of the specific particle size boundary and obtain the second intermediate annealing step of the randomized recrystallized structure at a high temperature higher than the upper limit temperature of the recrystallization of the copper alloy, the area ratio AR1 of the strip-shaped uneven region cannot be satisfied. The condition of the ratio of the RDW to the area ratio AR2 eventually leads to a decrease in battery characteristics.

表格6中列出純銅系之測試結果。 The test results for pure copper are listed in Table 6.

在此分別對本實施形態之壓延銅箔(本例)以製造步驟A製作之實施例5-1~5-2、以製造步驟E、F、G、H、I製作之比較例5-21~5-25進行測試。 Here, Comparative Examples 5-21 of the rolled copper foil of the present embodiment (in this example), which were produced in the manufacturing step A, and the manufacturing steps E, F, G, H, and I, respectively, were carried out. 5-25 for testing.

實施例5-1、比較例5-21~5-25之氧含量為180ppm,滿足氧含量為2~200ppm之條件。 The oxygen content of Example 5-1 and Comparative Example 5-21 to 5-25 was 180 ppm, and the oxygen content was 2 to 200 ppm.

實施例5-2之氧含量為6ppm,滿足氧含量為2~200ppm之條件。 The oxygen content of Example 5-2 was 6 ppm, and the oxygen content was 2 to 200 ppm.

實施例5-1、5-2滿足條狀凹凸區域之面積比AR1為60%以上之條件。 Examples 5-1 and 5-2 satisfy the condition that the area ratio AR1 of the strip-shaped uneven regions is 60% or more.

實施例5-1、5-2滿足RDW位向面積比AR2為15%以下之條件。 Examples 5-1 and 5-2 satisfy the condition that the RDW bit orientation area ratio AR2 is 15% or less.

而且,由實施例5-1、5-2之電池測試1之初次充電容量與電池測試2之維持率的值來看,電池測試中之特性結果良好。 Further, from the values of the initial charge capacity of the battery test 1 of Examples 5-1 and 5-2 and the maintenance rate of the battery test 2, the characteristic results in the battery test were good.

比較例5-21之條狀凹凸區域之面積比AR1為51%,未滿足60%以上之條件。比較例5-21之RDW位向面積比AR2為16%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Example 5-21 was 51%, and the condition of 60% or more was not satisfied. The RDW position of Comparative Example 5-21 was 16% in area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例5-21之電池測試1的初次充電容量為385mAh,比實施例5-1之451mAh低,電池測試2之維持率為9%,約為實施例5-1之27%的1/3。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 5-21 was 385 mAh, which was lower than 451 mAh of Example 5-1, and the maintenance rate of Battery Test 2 was 9%, which was about 27% of Example 5-1. /3.

因此,比較例5-21之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Example 5-21 were inferior to those of the examples.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟E來製作之比較例1-21的理由相 同。 This reasoning is based on the reason of Comparative Example 1-21 produced by the manufacturing step E shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2. with.

亦即,由於本製造方法特徵之第2中間退火中,由於未將本製造方法特徵之第2中間退火之升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度、且到達溫度設定為比銅合金之再結晶上限溫度還高的高溫,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, in the second intermediate annealing which is characterized by the present manufacturing method, the temperature increase rate of the second intermediate annealing which is not characterized by the present manufacturing method is set to a temperature increase rate at which the recrystallization precursor phenomenon is not applied, and the temperature setting is reached. In order to suppress the preferential movement of the specific particle size boundary and obtain the randomized recrystallized structure at a high temperature higher than the upper limit temperature of the recrystallization of the copper alloy, the area ratio of the strip-shaped uneven area to the AR1 and RDW aspect ratio cannot be satisfied. The conditions of AR2 eventually lead to lower battery characteristics.

比較例5-22之條狀凹凸區域之面積比AR1為57%,未滿足60%以上之條件。比較例5-22之RDW位向面積比AR2為17%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Examples 5 to 22 was 57%, and the condition of 60% or more was not satisfied. The RDW orientation of Comparative Example 5-22 was 17% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例5-22之電池測試1的初次充電容量為375mAh,比本實施例5-1之451mAh低,電池測試2之維持率為8%,比實施例5-1之27%的1/3還低。 Moreover, the initial charge capacity of Battery Test 1 of Comparative Example 5-22 was 375 mAh, which was lower than 451 mAh of Example 5-1, and the maintenance rate of Battery Test 2 was 8%, which was 27% higher than that of Example 5-1. /3 is still low.

因此,比較例5-22之電池測試特性比本實施例差。 Therefore, the battery test characteristics of Comparative Examples 5-22 were inferior to those of the present embodiment.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟F來製作之比較例1-22的理由相同。 This reasoning is the same as that of Comparative Example 1-22 which is produced in the manufacturing step F shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2.

亦即,由於本製造方法(步驟A)特徵之第2中間退火中,即使將到達溫度設定為比銅合金之再結晶上限溫度還高的溫度,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,由於第2中間退火之升溫速度不高,為0.2~1.8℃/秒,故無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 In other words, in the second intermediate annealing characterized by the manufacturing method (step A), even if the reaching temperature is set to a temperature higher than the recrystallization upper limit temperature of the copper alloy, the preferential movement of the specific particle size boundary is suppressed, and Obtaining a randomized recrystallized structure, since the temperature rise rate of the second intermediate annealing is not high, it is 0.2 to 1.8 ° C / sec, so the area ratio of the strip-shaped uneven area to the AR1 and RDW orientation area ratio AR2 cannot be satisfied, and finally the battery is caused. The characteristics are lower.

比較例5-23之條狀凹凸區域之面積比AR1為43%,未滿足60%以上之條件。比較例5-23之RDW位向面積比AR2為24%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Examples 5 to 23 was 43%, and the condition of 60% or more was not satisfied. The RDW orientation of Comparative Examples 5 to 23 was 24% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例5-23之電池測試1的初次充電容量為355mAh,比實施例5-1之451mAh低,電池測試2之維持率為6%,為實施例5-1之27%的1/4以下。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 5-23 was 355 mAh, which was lower than 451 mAh of Example 5-1, and the maintenance rate of Battery Test 2 was 6%, which was 1/7% of that of Example 5-1. 4 or less.

因此,比較例5-23之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Examples 5-23 were inferior to those of the examples.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟G來製作之比較例1-23的理由相同。 This reasoning is the same as the reason of Comparative Example 1-23 produced by the manufacturing step G shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2.

亦即,由於本製造方法(步驟A)特徵之第2中間退火中,即使將升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度,由於未將到達溫度設定為比銅合金之再結晶上限溫度還高的高溫,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, in the second intermediate annealing characterized by the manufacturing method (step A), even if the temperature increase rate is set to a temperature increase rate at which the recrystallization precursor phenomenon is not given, the reaching temperature is not set to be higher than that of the copper alloy. The high temperature at which the upper limit temperature of the recrystallization is high also suppresses the preferential movement of the specific particle size boundary and obtains the randomized recrystallized structure, so that the area ratio of the strip-shaped uneven area to the AR1 and RDW bit area ratio AR2 cannot be satisfied, and finally This causes the battery characteristics to become low.

比較例5-24之條狀凹凸區域之面積比AR1為55%,未滿足60%以上之條件。比較例5-24之RDW位向面積比AR2為19%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Examples 5 to 24 was 55%, and the condition of 60% or more was not satisfied. The RDW of Comparative Examples 5 to 24 had an area ratio AR2 of 19% and did not satisfy the condition of 15% or less.

而且,比較例5-24之電池測試1的初次充電容量為365mAh,比實施例5-1之451mAh低,電池測試2之維持率為9%,約為實施例5-1之27%的1/3。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 5-24 was 365 mAh, which was lower than 451 mAh of Example 5-1, and the maintenance rate of Battery Test 2 was 9%, which was about 27% of Example 5-1. /3.

因此,比較例5-24之電池測試特性比本實施例差。 Therefore, the battery test characteristics of Comparative Examples 5-24 were inferior to those of the present embodiment.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟H來製作之比較例1-24的理由相同。 This reasoning is the same as the reason of Comparative Example 1-24 produced by the manufacturing step H shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2.

亦即,由於本製造方法(步驟A)特徵之最後中間退火中,由於未將到達溫度設定為比銅合金之再結晶上限溫度還高的溫度,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, in the final intermediate annealing of the feature of the manufacturing method (step A), since the reaching temperature is not set to a temperature higher than the recrystallization upper limit temperature of the copper alloy, the preferential movement of the specific particle size boundary is suppressed, and The randomized recrystallized structure is obtained, so that the area ratio of the strip-shaped uneven areas to the AR1 and RDW orientation area ratio AR2 cannot be satisfied, and eventually the battery characteristics are lowered.

比較例5-25之條狀凹凸區域之面積比AR1為46%,未滿足60%以上之條件。比較例5-25之RDW位向面積比AR2為17%,未滿足15%以下之條件。 The area ratio AR1 of the strip-shaped uneven regions of Comparative Examples 5 to 25 was 46%, and the condition of 60% or more was not satisfied. The RDW orientation of Comparative Examples 5-25 was 17% in the area ratio AR2, and the condition of 15% or less was not satisfied.

而且,比較例5-25之電池測試1的初次充電容量為370mAh,比實施例5-1之451mAh低,電池測試2之維持率為6%,為實施例5-1之27%的1/4以下。 Further, the initial charge capacity of Battery Test 1 of Comparative Example 5-25 was 370 mAh, which was lower than 451 mAh of Example 5-1, and the maintenance rate of Battery Test 2 was 6%, which was 1/7% of Example 5-1. 4 or less.

因此,比較例5-25之電池測試特性比實施例差。 Therefore, the battery test characteristics of Comparative Examples 5-25 were inferior to those of the examples.

此推斷係與以表格2之Cu-(Cr,Zr)系銅合金之測試結果中所示之製造步驟I來製作之比較例1-25的理由相同。 This reasoning is the same as the reason of Comparative Example 1-25 produced in the manufacturing step I shown in the test results of the Cu-(Cr, Zr)-based copper alloy of Table 2.

亦即,由於本製造方法特徵之進行最後退火之前,由於未進行本製造方法(步驟A)特徵之將升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度、且將到達溫度設定為比銅合金之再結晶上限溫度還高的高溫,來抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組 織之第2中間退火,因此無法滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,最終導致電池特性變低。 That is, since the feature of the present manufacturing method is subjected to the final annealing, the temperature increase rate is set to a temperature increase rate at which the recrystallization precursor phenomenon is not given, and the temperature is set to be reached because the feature of the present manufacturing method (step A) is not performed. A high temperature higher than the upper limit temperature of the recrystallization of the copper alloy to suppress the preferential movement of the specific particle size boundary and obtain a randomized recrystallization group Since the second intermediate annealing is woven, the area ratio of the strip-shaped uneven areas to the AR1 and RDW orientation area ratio AR2 cannot be satisfied, and eventually the battery characteristics are lowered.

如上述說明,當滿足本發明實施形態中所提出之對壓延方向之60°~120°方向之條狀圖案之表面凹凸所發現之條狀凹凸區域的面積比AR1為60%以上、且表面結晶位向之RDW位向之{012}<100>方向起13°以內之RDW位向面積比AR2為15%以下時,電池測試之特性良好。 As described above, the area ratio AR1 of the strip-shaped unevenness region which is found in the surface unevenness of the strip pattern in the direction of 60° to 120° in the rolling direction which is proposed in the embodiment of the present invention is 60% or more, and the surface is crystallized. When the RDW bit of the bit direction is less than or equal to 15% of the RDW bit area ratio AR2 within the range of {012}<100>, the battery test characteristics are good.

此外,本實施形態之壓延銅箔之製造方法(製造步驟A)之第2中間退火中,藉由將升溫速度設定為不給予產生再結晶前驅現象時間之快的升溫速度、且將到達溫度設定為比銅合金之再結晶上限溫度還高之高溫,以抑制特定之粒徑邊界之優先移動、並獲得隨機化再結晶組織,使其滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2之條件,進而得到良好的電池測試特性。 Further, in the second intermediate annealing in the method for producing a rolled copper foil according to the present embodiment (manufacturing step A), the temperature increase rate is set so as not to give a temperature increase rate at which the recrystallization precursor phenomenon occurs, and the temperature is set to be reached. It is a high temperature higher than the upper limit temperature of the recrystallization of the copper alloy to suppress the preferential movement of the specific particle size boundary, and obtain a randomized recrystallized structure to satisfy the area ratio of the strip-shaped uneven area to the area ratio of the AR1 and the RDW. The conditions of AR2, in turn, give good battery test characteristics.

另一方面,以製造步驟E~I所製造之比較例未滿足條狀凹凸區域之面積比AR1與RDW位向面積比AR2所訂定之條件,電池測試結果差。 On the other hand, the comparative example manufactured by the manufacturing steps E to I did not satisfy the conditions defined by the area ratio AR1 and the RDW bit area ratio AR2 of the strip-shaped uneven areas, and the battery test result was inferior.

另外,相對於表格6所示之純銅系,表格2~表格5之合金系顯示較佳的電池特性。 Further, the alloys of Tables 2 to 5 showed better battery characteristics with respect to the pure copper system shown in Table 6.

根據本實施形態,由於形成具有均一凹凸之粗糙化電鍍表面,集電體與活性物質間之接著性良好,故可防止電池等製造物於製造、及使用中之集電體與活性物質的脫離。而且,隨著電池之初期放電容量良好,可防止重複充‧ 放電循環後之放電容量的降低,進而可達到二次電池之高機能化。 According to the present embodiment, since the roughened plating surface having uniform unevenness is formed, the adhesion between the current collector and the active material is good, and thus the separation of the current collector and the active material in the production and use of the manufactured product such as a battery can be prevented. . Moreover, as the initial discharge capacity of the battery is good, it is possible to prevent repeated charging. The discharge capacity after the discharge cycle is lowered, and the high performance of the secondary battery can be achieved.

本發明並不限於本實施例中所示之合金,亦可適用於如Cu-Fe系、Cu-Ti系、Cu-Be系、Cu-Zn系、Cu-Ni系、Cu-Al系等之任何系之銅合金。 The present invention is not limited to the alloys shown in the examples, and may be applied to, for example, a Cu-Fe system, a Cu-Ti system, a Cu-Be system, a Cu-Zn system, a Cu-Ni system, a Cu-Al system, or the like. Any copper alloy.

本發明不僅可適用於上述碳系與矽(Si)系之負極活性物質,亦可適用於錫(Sn)、上述之複合系等之各種活性物質所構成之電池負極集電體,本發明之效果並不限於本實施例中所示之電池構造。 The present invention can be applied not only to the above-mentioned carbon-based and cerium (Si)-based negative electrode active materials, but also to battery negative electrode current collectors composed of various active materials such as tin (Sn) and the above-mentioned composite system, and the present invention The effect is not limited to the battery configuration shown in this embodiment.

本發明之實施形態之壓延銅箔可應用於可撓式電路板(FPC)、捲帶式晶片載體封裝(TCP、TAB)、軟板晶片(COF)等。 The rolled copper foil according to the embodiment of the present invention can be applied to a flexible circuit board (FPC), a tape carrier type wafer carrier package (TCP, TAB), a soft board wafer (COF), or the like.

10‧‧‧鋰二次電池 10‧‧‧Lithium secondary battery

11‧‧‧正極 11‧‧‧ positive

12‧‧‧負極 12‧‧‧negative

13‧‧‧正極集電體 13‧‧‧ positive current collector

14‧‧‧負極集電體 14‧‧‧Negative current collector

15‧‧‧隔板 15‧‧‧Baffle

16‧‧‧正極側電池罐 16‧‧‧positive side battery can

17‧‧‧負極側電池罐 17‧‧‧Negative side battery can

18‧‧‧絕緣包裝 18‧‧‧Insulated packaging

20‧‧‧壓延銅箔 20‧‧‧Depressed copper foil

圖1係繪示根據本發明之實施形態之以壓延銅箔為負極集電體之鋰二次電池之簡單示意圖。 1 is a schematic view showing a lithium secondary battery using a rolled copper foil as a negative electrode current collector according to an embodiment of the present invention.

圖2係繪示根據本發明之實施形態之壓延銅箔之擴大示意圖。 Fig. 2 is a schematic enlarged view showing a rolled copper foil according to an embodiment of the present invention.

圖3係繪示根據本發明之實施形態之壓延銅箔之製造方法說明圖。 Fig. 3 is an explanatory view showing a method of manufacturing a rolled copper foil according to an embodiment of the present invention.

圖4係繪示壓延銅箔之表面組織中條狀凹凸區域、與於條狀凹凸區域中所發現之低凹凸區域之示意圖。 Fig. 4 is a schematic view showing a strip-shaped uneven portion in the surface structure of the rolled copper foil and a low uneven portion found in the strip-shaped uneven portion.

圖5係繪示根據本實施形態之壓延銅箔之表面組織其條狀凹凸多的狀態之示意圖。 Fig. 5 is a schematic view showing a state in which the surface of the rolled copper foil according to the present embodiment has a large number of strip-like irregularities.

圖6係繪示EBSD測量結果之圖示。 Figure 6 is a graphical representation of the EBSD measurement results.

圖7係繪示以由RDW位向之偏差角度為13°以內之位向為例子之圖示。 Fig. 7 is a diagram showing an example in which the direction of deviation from the RDW position is within 13°.

圖8係繪示比較例之製造方法之流程示意圖。 Fig. 8 is a flow chart showing the manufacturing method of the comparative example.

10‧‧‧鋰二次電池 10‧‧‧Lithium secondary battery

11‧‧‧正極 11‧‧‧ positive

12‧‧‧負極 12‧‧‧negative

13‧‧‧正極集電體 13‧‧‧ positive current collector

14‧‧‧負極集電體 14‧‧‧Negative current collector

15‧‧‧隔板 15‧‧‧Baffle

16‧‧‧正極側電池罐 16‧‧‧positive side battery can

17‧‧‧負極側電池罐 17‧‧‧Negative side battery can

18‧‧‧絕緣包裝 18‧‧‧Insulated packaging

Claims (17)

一種二次電池集電體用壓延銅箔,係以壓延所形成之銅或銅合金所構成之壓延銅箔,其中於表面結晶位向之RDW位向之{012}<100>方向起13°以內之面積比為15%以下。 A rolled copper foil for a secondary battery current collector, which is a rolled copper foil composed of copper or a copper alloy formed by calendering, wherein the surface crystallization position is 13° from the RDW position to the {012}<100> direction The area ratio within the area is 15% or less. 如申請專利範圍第1項所述之二次電池集電體用壓延銅箔,其中相對於壓延方向之60°~120°方向之條狀圖案之表面凹凸所發現之區域的面積比為60%以上。 The rolled copper foil for a secondary battery current collector according to the first aspect of the invention, wherein the area ratio of the area of the strip pattern of the strip pattern of 60° to 120° with respect to the rolling direction is 60%. the above. 如申請專利範圍第1或2項所述之二次電池集電體用壓延銅箔,其中包括主成份為Cr與Zr中至少一種之Cu-(Cr,Zr)系銅合金,其主成份之Cr與Zr中至少一種之總含量為0.01~0.9重量%。 The rolled copper foil for a secondary battery current collector according to claim 1 or 2, which comprises a Cu-(Cr, Zr)-based copper alloy whose main component is at least one of Cr and Zr, the main component thereof The total content of at least one of Cr and Zr is from 0.01 to 0.9% by weight. 如申請專利範圍第3項所述之二次電池集電體用壓延銅箔,其中副添加成份之Sn、Zn、Si、Mn、Mg中至少一種成份之總含量為0.01~0.45重量%。 The rolled copper foil for a secondary battery current collector according to claim 3, wherein a total content of at least one of Sn, Zn, Si, Mn, and Mg in the sub-additive component is 0.01 to 0.45 wt%. 如申請專利範圍第1或2項所述之二次電池集電體用壓延銅箔,係包括主成份為Ag之Cu-Ag系銅合金,其主成份之Ag之總含量為0.01~0.9重量%。 The rolled copper foil for a secondary battery current collector according to claim 1 or 2, which comprises a Cu-Ag-based copper alloy whose main component is Ag, and the total content of Ag of the main component is 0.01 to 0.9 weight. %. 如申請專利範圍第5項所述之二次電池集電體用壓延銅箔,其中副添加成份之Sn、Zn、Si、Mn、Mg中至少一種成份之總含量為0.01~0.45重量%。 The rolled copper foil for a secondary battery current collector according to claim 5, wherein a total content of at least one of Sn, Zn, Si, Mn, and Mg of the sub-additive component is 0.01 to 0.45 wt%. 如申請專利範圍第1或2項所述之二次電池集電體用壓延銅箔,其中包括主成份為Sn之Cu-Sn系銅合金,其主成份之Sn之總含量為0.01~4.9重量%。 The rolled copper foil for a secondary battery current collector according to claim 1 or 2, wherein the Cu-Sn-based copper alloy having a main component of Sn has a total content of Sn of 0.01 to 4.9 by weight. %. 如申請專利範圍第7項所述之二次電池集電體用壓延銅箔,其中副添加成份之Zn、Si、P、Mg中至少一種成份之總含量為0.01~0.45重量%。 The rolled copper foil for a secondary battery current collector according to claim 7, wherein a total content of at least one of Zn, Si, P, and Mg of the sub-additive component is 0.01 to 0.45 wt%. 如申請專利範圍第1或2項所述之二次電池集電體用壓延銅箔,其中包括主成份為Ni與Si之Cu-Ni-Si系銅合金,其主成份之Ni含量為1.4~4.8重量%,Si含量為0.2~1.3重量%。 The rolled copper foil for a secondary battery current collector according to claim 1 or 2, wherein the Cu-Ni-Si-based copper alloy having a main component of Ni and Si has a Ni content of 1.4 to a main component. 4.8% by weight, the Si content is 0.2 to 1.3% by weight. 如申請專利範圍第9項所述之二次電池集電體用壓延銅箔,其中副添加成份之Sn、Zn、Si、Cr、Mn、Mg、Co中至少一種成份之總含量為0.005~0.9重量%。 The rolled copper foil for a secondary battery current collector according to claim 9, wherein the total content of at least one of Sn, Zn, Si, Cr, Mn, Mg, and Co of the sub-additive component is 0.005 to 0.9. weight%. 如申請專利範圍第1或2項所述之二次電池集電體用壓延銅箔,其中包括氧之純銅系,氧含量為2~200ppm。 The rolled copper foil for a secondary battery current collector according to claim 1 or 2, which comprises a pure copper system of oxygen, having an oxygen content of 2 to 200 ppm. 如申請專利範圍第3至11項中任一項所述之二次電池集電體用壓延銅箔,其中除主成份外之剩餘部份、或除主成份與副添加成份外之剩餘部份係由不可避免之不純物所組成。 The rolled copper foil for a secondary battery current collector according to any one of claims 3 to 11, wherein the remaining portion except the main component or the remaining portion other than the main component and the sub-additive component It consists of unavoidable impurities. 一種二次電池集電體用壓延銅箔之製造方法,製造如申請專利範圍第1至12項中任一項所述之二次電池集電體用壓延銅箔之壓延銅箔,包括:熱間壓延步驟,對被壓延材料加熱至再結晶溫度以上之溫度,以進行熱間壓延;至少2次之中間冷間壓延步驟,於上述熱間壓延步驟之後,於在不會產生再結晶之溫度下進行冷間壓延;至少1次之中間退火步驟,於上述中間冷間壓延步驟 之間,於特定溫度下,且以特定之升溫速度,來進行中間之退火;以及最後退火步驟,於最後之上述中間冷間壓延步驟之後,於特定溫度下,且以特定之升溫速度,來進行最後之退火,於進行上述最後退火步驟之前之上述中間退火步驟中,上述升溫速度設定為不給予產生再結晶前驅現象時間之速度,到達溫度設定為抑制特定之邊界粒徑之優先移動、並可獲得隨機化再結晶組織之高溫。 A method for producing a rolled copper foil for a secondary battery current collector, which comprises a rolled copper foil for a rolled copper foil for a secondary battery current collector according to any one of claims 1 to 12, comprising: heat The inter-calendering step of heating the calendered material to a temperature above the recrystallization temperature for inter-heat rolling; at least two intermediate cold-column rolling steps, after the inter-heat rolling step, at a temperature at which no recrystallization occurs Performing cold rolling; at least one intermediate annealing step, in the above intermediate cold rolling step Intermediate annealing is performed at a specific temperature and at a specific temperature increase rate; and a final annealing step is performed at a specific temperature and at a specific temperature increase rate after the last intermediate cold rolling step Performing the final annealing, in the intermediate annealing step before the final annealing step, the temperature increase rate is set to a speed at which no recrystallization precursor phenomenon occurs, and the reaching temperature is set to suppress the preferential movement of the specific boundary particle diameter, and The high temperature of the randomized recrystallized structure can be obtained. 如申請專利範圍第13項所述之二次電池集電體用壓延銅箔之製造方法,其中於進行上述最後退火步驟前之上述中間退火步驟中,上述到達溫度係比銅合金之再結晶上限溫度高之溫度。 The method for producing a rolled copper foil for a secondary battery current collector according to claim 13, wherein in the intermediate annealing step before the final annealing step, the reaching temperature is higher than a recrystallization upper limit of the copper alloy The temperature is high. 如申請專利範圍第13或14項所述之二次電池集電體用壓延銅箔之製造方法,其中於進行上述最後退火步驟前之上述中間退火步驟中,上述升溫速度係2℃/秒以上,上述到達溫度係800℃以上之高溫。 The method for producing a rolled copper foil for a secondary battery current collector according to claim 13 or claim 14, wherein in the intermediate annealing step before the final annealing step, the temperature increase rate is 2 ° C /sec or more The above-mentioned reaching temperature is a high temperature of 800 ° C or higher. 如申請專利範圍第13至15項中任一項所述之二次電池集電體用壓延銅箔之製造方法,更包括:第一中間冷間壓延步驟,於上述熱間壓延步驟之後進 行冷間壓延;第一中間退火步驟,於上述第一中間冷間壓延步驟之後進行中間退火;第二中間冷間壓延步驟,於上述第一中間退火步驟之後進行冷間壓延;第二中間退火步驟,於上述第二中間冷間壓延步驟之後進行中間退火;及第三中間冷間壓延步驟,於上述第二中間退火步驟之後進行冷間壓延,上述最後退火步驟係於上述第三中間冷間壓延步驟之後進行,上述第二中間退火步驟係於上述最後退火步驟之前進行之上述中間退火步驟,上述升溫速度設定為不給予產生再結晶前驅現象時間之速度,到達溫度設定為抑制特定之邊界粒徑之優先移動、且可獲得隨機化再結晶組織之高溫。 The method for producing a rolled copper foil for a secondary battery current collector according to any one of claims 13 to 15, further comprising: a first intermediate cold rolling step, after the hot pressing step Cold rolling; a first intermediate annealing step, performing intermediate annealing after the first intermediate cold rolling step; a second intermediate cold rolling step, performing cold rolling after the first intermediate annealing step; and second intermediate annealing a step of performing an intermediate annealing after the second intermediate cold rolling step; and a third intermediate cold rolling step, performing cold rolling after the second intermediate annealing step, wherein the final annealing step is performed in the third intermediate cooling chamber After the calendering step, the second intermediate annealing step is performed in the intermediate annealing step performed before the final annealing step, and the temperature increasing rate is set to a speed at which no recrystallization precursor phenomenon is generated, and the reaching temperature is set to suppress specific boundary particles. The diameter moves preferentially and the high temperature of the randomized recrystallized structure can be obtained. 如申請專利範圍第13至16項中任一項所述之二次電池集電體用壓延銅箔之製造方法,其中於上述熱間壓延步驟之前,更包括均質化熱處理步驟,以對上述被壓延材料,進行均質化熱處理。 The method for producing a rolled copper foil for a secondary battery current collector according to any one of claims 13 to 16, wherein before the hot pressing step, a homogenization heat treatment step is further included to The material is calendered and subjected to homogenization heat treatment.
TW101128381A 2011-08-05 2012-08-06 Calender copper foil for secondary battery collector and its manufacturing method TWI556488B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011171983 2011-08-05

Publications (2)

Publication Number Publication Date
TW201316589A true TW201316589A (en) 2013-04-16
TWI556488B TWI556488B (en) 2016-11-01

Family

ID=47668477

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101128381A TWI556488B (en) 2011-08-05 2012-08-06 Calender copper foil for secondary battery collector and its manufacturing method

Country Status (5)

Country Link
JP (1) JP5480444B2 (en)
KR (1) KR101924250B1 (en)
CN (1) CN103732767B (en)
TW (1) TWI556488B (en)
WO (1) WO2013021970A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6182372B2 (en) * 2013-07-10 2017-08-16 古河電気工業株式会社 Copper alloy rolled foil for secondary battery current collector and method for producing the same
CN105408525B (en) * 2013-07-23 2019-03-08 Jx日矿日石金属株式会社 Surface treatment copper foil, Copper foil with carrier, the manufacturing method of substrate, resin base material, printing distributing board, copper-cover laminated plate and printing distributing board
CN104630543B (en) * 2015-01-23 2017-06-16 上海康成铜业集团有限公司 A kind of commutator low silver-bearing copper lanthanum alloy and preparation method
CN108400338B (en) * 2017-02-03 2021-11-30 Jx金属株式会社 Surface-treated copper foil, and collector, electrode and battery using same
CN110168119B (en) * 2017-02-17 2022-10-04 古河电气工业株式会社 Copper alloy material for resistance material, method for producing same, and resistor
JP6790153B2 (en) * 2019-03-04 2020-11-25 Jx金属株式会社 A method for manufacturing a rolled copper foil for a secondary battery negative electrode current collector, a secondary battery negative electrode current collector and a secondary battery using the rolled copper foil, and a rolled copper foil for a secondary battery negative electrode current collector.
CN110252972B (en) * 2019-07-06 2021-11-30 湖北精益高精铜板带有限公司 High-strength high-conductivity microalloy copper foil and processing method thereof
CN113369301A (en) * 2021-04-30 2021-09-10 重庆材料研究院有限公司 Rolled copper foil for manufacturing copper mesh and preparation method thereof
WO2024014170A1 (en) * 2022-07-14 2024-01-18 Jx金属株式会社 Rolled copper foil, copper-clad laminated plate, production method for copper-clad laminated plate, production method for flexible printed circuit, and production method for electronic component

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3744810B2 (en) * 2001-03-30 2006-02-15 株式会社神戸製鋼所 Copper alloy for terminal / connector and manufacturing method thereof
JP5156317B2 (en) * 2006-09-27 2013-03-06 Dowaメタルテック株式会社 Copper alloy sheet and manufacturing method thereof
JP4428715B2 (en) * 2006-09-29 2010-03-10 日鉱金属株式会社 Copper alloy foil
JP4981748B2 (en) * 2007-05-31 2012-07-25 古河電気工業株式会社 Copper alloy for electrical and electronic equipment
JP2009079282A (en) * 2007-09-27 2009-04-16 Nikko Kinzoku Kk Precipitation-hardening copper alloy foil
JP2009215604A (en) * 2008-03-10 2009-09-24 Hitachi Cable Ltd Copper foil and manufacturing method thereof
JP2009242871A (en) * 2008-03-31 2009-10-22 Nippon Mining & Metals Co Ltd High strength and high electric conductivity two-phase copper alloy foil
JP5245813B2 (en) * 2008-12-25 2013-07-24 日立電線株式会社 Rolled copper foil
JP2010150597A (en) * 2008-12-25 2010-07-08 Hitachi Cable Ltd Rolled copper foil
CN102165080B (en) * 2009-01-09 2013-08-21 三菱伸铜株式会社 High-strength high-conductivity copper alloy rolled sheet and method for producing same
JP5520533B2 (en) * 2009-07-03 2014-06-11 古河電気工業株式会社 Copper alloy material and method for producing the same
CN102695811B (en) * 2009-12-02 2014-04-02 古河电气工业株式会社 Copper alloy sheet and process for producing same
JP5448763B2 (en) * 2009-12-02 2014-03-19 古河電気工業株式会社 Copper alloy material
CN103732768B (en) * 2011-08-05 2016-08-17 古河电气工业株式会社 Secondary cell collector rolled copper foil and manufacture method thereof
CN102851527B (en) 2012-09-07 2014-05-07 江西理工大学 Copper-silver-magnesium alloy contact wire and preparation method thereof

Also Published As

Publication number Publication date
JPWO2013021970A1 (en) 2015-03-05
CN103732767A (en) 2014-04-16
KR101924250B1 (en) 2018-11-30
JP5480444B2 (en) 2014-04-23
KR20140053285A (en) 2014-05-07
TWI556488B (en) 2016-11-01
CN103732767B (en) 2016-08-31
WO2013021970A1 (en) 2013-02-14

Similar Documents

Publication Publication Date Title
TWI556488B (en) Calender copper foil for secondary battery collector and its manufacturing method
JP5567210B2 (en) Rolled copper foil for secondary battery negative electrode current collector and method for producing the same
CN102245788B (en) Aluminum alloy foil for current collector and method for producing same
JP5856076B2 (en) Aluminum alloy foil for electrode current collector and method for producing the same
JP5791719B2 (en) Aluminum alloy foil for electrode current collector and method for producing the same
CN102978483B (en) Aluminum alloy foil for lithium-ion anode current collector and manufacture method thereof
US11108052B2 (en) Rolled copper foil for negative electrode current collector of secondary battery, negative electrode of secondary battery and secondary battery using the rolled copper, and method for manufacturing rolled copper foil for negative electrode current collector of secondary battery
JPWO2008132987A1 (en) Electrolytic copper foil for lithium secondary battery and method for producing the copper foil
KR20160075604A (en) Aluminum alloy foil for electrode current collector, and method for producing same
JP5798128B2 (en) Aluminum alloy foil for electrode current collector and method for producing the same
EP2843067A1 (en) Aluminum alloy foil for electrode current collector, method for producing same, and lithium ion secondary battery
JP5791720B2 (en) Aluminum alloy foil for electrode current collector and method for producing the same
JPWO2013018162A1 (en) Aluminum alloy foil for electrode current collector and method for producing the same
EP2857535B1 (en) Aluminum alloy foil for electrode collector, method for manufacturing same, and electrode material
JP6058915B2 (en) Rolled copper foil or rolled copper alloy foil for secondary battery negative electrode current collector, negative electrode material for lithium ion secondary battery and lithium ion secondary battery using the same
CN114855101B (en) Manufacturing method of positive aluminum foil material for pure aluminum-based battery tab
JP2009205888A (en) Negative electrode for lithium secondary battery and its manufacturing method