TW201310670A - 用於光電元件之基板的剝離結構 - Google Patents

用於光電元件之基板的剝離結構 Download PDF

Info

Publication number
TW201310670A
TW201310670A TW100130742A TW100130742A TW201310670A TW 201310670 A TW201310670 A TW 201310670A TW 100130742 A TW100130742 A TW 100130742A TW 100130742 A TW100130742 A TW 100130742A TW 201310670 A TW201310670 A TW 201310670A
Authority
TW
Taiwan
Prior art keywords
substrate
layer
photovoltaic element
pattern
channel
Prior art date
Application number
TW100130742A
Other languages
English (en)
Other versions
TWI585990B (zh
Inventor
Yu-Li Tsai
Chih-Hung Wu
Jei-Li Ho
Original Assignee
Iner Aec Executive Yuan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iner Aec Executive Yuan filed Critical Iner Aec Executive Yuan
Priority to TW100130742A priority Critical patent/TWI585990B/zh
Priority to US13/236,859 priority patent/US8497421B2/en
Priority to EP11401601.7A priority patent/EP2562825B1/en
Publication of TW201310670A publication Critical patent/TW201310670A/zh
Application granted granted Critical
Publication of TWI585990B publication Critical patent/TWI585990B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

一種用於光電元件之基板的剝離結構，於基板剝離過程中，可使蝕刻溶液經由內部及外部蝕刻通道向犧牲層方向蝕刻，以增加整體蝕刻速度及降低基板剝離之時間。

Description

用於光電元件之基板的剝離結構
本發明係為一種用於光電元件之基板的剝離結構，其係用於半導體產業及光電產業上之基板剝離製程。
III-V族多接面太陽電池在聚光操作條件下，目前具有約42%的實驗室世界紀錄轉換效率值，遠高於其他平板型太陽電池所能獲得的轉換效率，因此III-V族太陽電池非常適合應用於大型地面太陽光發電系統以供應部分民生用電。
一般而言，太陽電池接受日照時，其所產生的光電流會透過元件本身金屬電極而輸出至外界端使用，尤其當太陽電池在聚光條件運作下，元件內部經常承受數安培的大電流。就熱阻角度而言，任何散熱不佳之處皆可能累積熱能，一但溫度過高，將損害太陽電池的電流-電壓特性。
為了增加太陽電池的導熱能力，現有技術之作法為：首先在高散熱金屬基板上製作金屬黏貼層，再以晶圓鍵合(wafer bonding)技術將金屬基板與太陽電池互相鍵合。接著再以化學溶液，例如氨水/雙氧水/水之混合溶液，將晶片之原始基板(砷化鎵)直接反應蝕刻去除。最後再製作金屬柵狀電極，以完成一具有高散熱基板太陽電池之製作程序。
現有技術製作過程中，由於原始砷化鎵基板已經被化學溶液蝕刻消失，因此現有技術之主要缺點有二：其一是完全無法回收再利用原始基板，其二是製作成本增加。相較於不具備高散熱金屬基板之傳統太陽電池而言，現有技術之製作成本相對增加，原因在於原始基板之成本損耗、高散熱金屬基板購置成本、含砷廢液處理成本等。
為了改善前述現有技術之缺點，文獻上有報導利用化學溶液選擇性蝕刻半導體犧牲層進而分離原始基板。以發光二極體與太陽電池等光電元件為例，此等光電元件之基板剝離作法是在磊晶基板與光電薄膜結構之間加入一層高鋁含量的砷化鋁鎵犧牲層薄膜，利用此一薄膜容易受到氫氟酸溶液蝕刻反應的特性，進而分離磊晶基板與光電薄膜結構。然而此法僅能從晶圓最外圍逐漸向內部進行犧牲層之蝕刻反應，由於毛細現象與極小蝕刻接觸面積之限制，使得犧牲層之側蝕速率往往非常緩慢，對於大尺寸晶圓之基板剝離製程而言，剝離一片基板所需之時間則為極長，完全無法推廣至產業界進行量產。
有鑑於現有技術之缺點，本發明提供一種用於光電元件之基板的剝離結構，其具有增加蝕刻接觸面積並縮短基板剝離所需時間之功效。
本發明提供一種用於光電元件之基板的剝離結構，其係應用於一基板，該基板具有一緩衝層、一蝕刻停止層、一基板保護層、一犧牲層及一光電元件結構，緩衝層係設於基板之一面，蝕刻停止層係設於緩衝層之遠離該基板之一面，基板保護層係設於蝕刻停止層之遠離該緩衝層之一面，犧牲層係設於基板保護層之遠離蝕刻停止層之一面，光電元件結構係設於犧牲層之另一面。
該剝離結構包含有一金屬層，其係設於光電元件結構遠離犧牲層之一面，該金屬層具有至少一圖樣，相鄰之圖樣之間具有一外部通到，該圖樣具有至少一內部通道。
該圖樣金屬層之製作方式係依序以微影及鍍膜製程，完成在晶圓上定義出複數個尺寸等同於晶粒尺寸之圖樣化金屬，其中圖樣與圖樣之間是外部蝕刻通道，而圖樣本身則包含至少一條內部蝕刻通道，其中內部蝕刻通道與外部蝕刻通道是相互連通的。
接著使用蝕刻溶液對晶粒做個別化蝕刻，使蝕刻溶液可於金屬圖樣之間與金屬圖樣本身蝕刻出複數條內部及外部蝕刻通道，並控制通道深度至犧牲層。
最後，將晶圓浸泡在氫氟酸水溶液中，氫氟酸溶液可立即沿著先前定義出的複數條外部蝕刻通道進入晶圓內部各處，並圍繞在晶粒之間進行犧牲層之側蝕反應。此外，更可因為內部、外部通道是相互連通的特性，使氫氟酸溶液更可進入內部蝕刻通道而加速犧牲層之側蝕反應，進而縮短基板剝離時間。
綜合上述，本發明之用於光電元件之基板的剝離結構，其金屬層所具有之內部、外部蝕刻通道，可在進行基板剝離製程時，允許蝕刻溶液經由該蝕刻通道而加速犧牲層之側蝕反應，進而縮短基板分離所需之時間。
相較於現有技術，本發明具有下列優點：
1.　加速側蝕反應；
2.大幅減少剝離基板所需之時間；
3.顯著地改善毛細現象造成蝕刻速度低落之問題；因此相當具有市場潛力。
以下將參照隨附之圖式來描述本發明為達成目的所使用的技術手段與功效，而以下圖式所列舉之實施例僅為輔助說明，以利　貴審查委員瞭解，但本案之技術手段並不限於所列舉圖式。
請參閱圖一所示，本發明係為一種用於光電元件之基板的剝離結構，其係應用於一基板10，基板10具有一緩衝層101、一蝕刻停止層102、一基板保護層103、一犧牲層11及一光電元件結構12，緩衝層101係設於基板10之一面，蝕刻停止層102係設於緩衝層101之遠離基板10之一面，基板保護層103係設於蝕刻停止層102之遠離緩衝層101之一面，犧牲層11係設於基板保護層103之遠離蝕刻停止層102之一面，光電元件結構12係設於犧牲層11之另一面。
請再配合參考圖一所示，其為本發明之用於光電元件之基板的剝離結構之第一實施例，該剝離結構係包含有一金屬層13。
金屬層13係設於光電元件結構12遠離犧牲層11之一面，金屬層13具有至少一圖樣，該圖樣係為一多邊形，於本實施例中為矩形，在相鄰之圖樣之間具有一外部通道14，而在矩形之一側具有一內部通道15，該內部通道15可為多邊形，本實施例為長條形。
以下之各實施例係針對金屬層說明，金屬層設於基板之位置係相同於第一實施例，基板之結構係與第一實施例相同，故基板之結構就不再贅述，基板之元件符號係沿用第一實施例，特先陳明。
請配合參考圖二所示，其為本發明之用於光電元件之基板的剝離結構之第二實施例。
金屬層23係設於光電元件結構12遠離犧牲層11之一面，金屬層23具有至少一圖樣，該圖樣係為一多邊形，於本實施例中為矩形，在相鄰之圖樣之間具有一外部通道24，而在矩形之一側具有一第一內部通道25，在矩形之另一側具有一第二內部通道26，第一內部通道25可為多邊形，本實施例為長條形，第二內部通道26可為多邊形，本實施例為長條形。
請配合參考圖三所示，其為本發明用於光電元件之基板的剝離結構之第三實施例。
金屬層33係設於光電元件結構12遠離犧牲層11之一面，金屬層33具有至少一圖樣，該圖樣係為一多邊形，於本實施例中為矩形，在相鄰之圖樣之間具有一外部通道34，而在矩形之一側具有一第一內部通道35及一第二內部通道36，第一內部通道35可為多邊形，本實施例為長條形，第二內部通道36可為多邊形，本實施例為長條形。
請配合參考圖四所示，其為本發明用於光電元件之基板的剝離結構之第四實施例。
金屬層43係設於光電元件結構12遠離犧牲層11之一面，金屬層43具有至少一圖樣，該圖樣係為一多邊形，於本實施例中為矩形，在相鄰之圖樣之間具有一外部通道44，而在矩形之每一側分別具有一第一內部通道45、一第二內部通道46、一第三內部通道47及一第四內部通道48，第一內部通道45可為多邊形，本實施例為長條形，第二內部通道46可為多邊形，本實施例為長條形，第三內部通道47可為多邊形，本實施例為長條形，第四內部通道48可為多邊形，本實施例為長條形。
請配合參考圖五所示，其為本發明用於光電元件之基板的剝離結構之第五實施例。
金屬層53係設於光電元件結構12遠離犧牲層11之一面，金屬層53具有至少一圖樣，該圖樣係為一多邊形，於本實施例中為矩形，在相鄰之圖樣之間具有一外部通道54，而在矩形之一角具有一內部通道55，通道55可為多邊形，本實施例為長條形。
請配合參考圖六所示，其為本發明用於光電元件之基板的剝離結構之第六實施例。
金屬層63係設於光電元件結構12遠離犧牲層11之一面，金屬層63具有至少一圖樣，該圖樣係為一多邊形，於本實施例中為矩形，在相鄰之圖樣之間具有一外部通道64，而在矩形之一角具有一第一內部通道65，在矩形之另一角具有一第二內部通道66，第一內部通道65可為多邊形，本實施例為長條形，第二內部通道66可為多邊形。
請配合參考圖七所示，其為本發明用於光電元件之基板的剝離結構之第七實施例。
金屬層73係設於光電元件結構12遠離犧牲層11之一面，金屬層73具有至少一圖樣，該圖樣係為一多邊形，於本實施例中為矩形，在相鄰之圖樣之間具有一外部通道74，而在矩形之四角分別具有一第一內部通道75、一第二內部通道76、一第三內部通道77及一第四內部通道78，第一內部通道75可為多邊形，本實施例為長條形，第二內部通道76可為多邊形，本實施例為長條形，第三內部通道77可為多邊形，本實施例為長條形，第四內部通道78可為多邊形，本實施例為長條形。
請配合參考圖八所示，其為本發明用於光電元件之基板的剝離結構之第八實施例。
金屬層83係設於光電元件結構12遠離犧牲層11之一面，金屬層83具有至少一圖樣，該圖樣係為一多邊形，於本實施例中為矩形，在相鄰之圖樣之間具有一外部通道84，而在矩形之一側具有一內部通道85，內部通道85可為多邊形，本實施例為三角形。
請配合參考圖九所示，其為本發明用於光電元件之基板的剝離結構之第九實施例。
金屬層93係設於光電元件結構12遠離犧牲層11之一面，金屬層93具有至少一圖樣，該圖樣係為一多邊形，於本實施例中為矩形，在相鄰之圖樣之間具有一外部通道94，而在矩形之一角具有一內部通道95，內部通道95可為多邊形，本實施例為三角形。
請參考圖十及圖十一所示，應用本發明進行基板剝離，以第一實施例之結構為例，如圖十所示圖樣與圖樣之間是外部通道，而圖樣本身則包含至少一條內部通道，內部通道與外部通道是相互連通的，使用蝕刻溶液對晶粒做個別化蝕刻，使蝕刻溶液可於圖樣之間與圖樣本身蝕刻出複數條內部及外部蝕刻通道，並控制通道深度至犧牲層，當經過圖樣之個別化蝕刻之後，一蝕刻溶液便可由箭頭所示之方向朝犧牲層11方向進行蝕刻，接著如圖十一所示，當犧牲層11完全被蝕刻殆盡後，基板10便可完全被剝離，因此可以減少犧牲層11被完全蝕刻所需之時間，進而縮短基板10被剝離所需之時間。
總結來說，本發明之用於光電元件之基板的剝離結構，其金屬層具有內部、外部蝕刻通道，可於基板剝離過程中，允許蝕刻溶液經由此通道加速犧牲層之側蝕反應並縮短剝離基板所需之時間，相較於現有技術，具有顯著之改善及市場潛力。
惟以上所述者，僅為本發明之實施例而已，當不能以之限定本發明所實施之範圍。即大凡依本發明權利要求所作之均等變化與修飾，皆應仍屬於本發明專利涵蓋之範圍內，謹請　貴審查委員明鑑，並祈惠准，是所至禱。
10．．．基板
101．．．緩衝層
102．．．蝕刻停止層
103．．．基板保護層
11．．．犧牲層
12．．．光電元件結構
13．．．金屬層
14．．．外部通道
15．．．內部通道
23．．．金屬層
24．．．外部通道
25．．．第一內部通道
26．．．第二內部通道
33．．．金屬層
34．．．外部通道
35．．．第一內部通道
36．．．第二內部通道
43．．．金屬層
44．．．外部通道
45．．．第一內部通道
46．．．第二內部通道
47．．．第三內部通道
48．．．第四內部通道
53．．．金屬層
54．．．外部通道
55．．．內部通道
63．．．金屬層
64．．．外部通道
65．．．第一內部通道
66．．．第二內部通道
73．．．金屬層
74．．．外部通道
75．．．第一內部通道
76．．．第二內部通道
77．．．第三內部通道
78．．．第四內部通道
83．．．金屬層
84．．．外部通道
85．．．內部通道
93．．．金屬層
94．．．外部通道
95．．．內部通道
圖一係為用於光電元件之基板的剝離結構之第一實施例示意圖。
圖二係為用於光電元件之基板的剝離結構之第二實施例示意圖。
圖三係為用於光電元件之基板的剝離結構之第三實施例示意圖。
圖四係為用於光電元件之基板的剝離結構之第四實施例示意圖。
圖五係為用於光電元件之基板的剝離結構之第五實施例示意圖。
圖六係為用於光電元件之基板的剝離結構之第六實施例示意圖。
圖七係為用於光電元件之基板的剝離結構之第七實施例示意圖。
圖八係為用於光電元件之基板的剝離結構之第八實施例示意圖。
圖九係為用於光電元件之基板的剝離結構之第九實施例示意圖。
圖十係為應用本發明進行基板剝離時蝕刻溶液之流動示意圖。
圖十一係為應用本發明進行基板剝離經完全蝕刻後之示意圖。
10．．．基板
101．．．緩衝層
102．．．蝕刻停止層
103．．．基板保護層
11．．．犧牲層
12．．．光電元件結構
13．．．金屬層
14．．．外部通道
15．．．內部通道

Claims (6)

  1. 一種用於光電元件之基板的剝離結構，其係應用於一基板，該基板具有一緩衝層、一蝕刻停止層、一基板保護層、一犧牲層及一光電元件結構，該緩衝層係設於該基板之一面，該蝕刻停止層係設於該緩衝層之遠離該基板之一面，該基板保護層係設於該蝕刻停止層之遠離該緩衝層之一面，該犧牲層係設於該基板保護層之遠離該蝕刻停止層之一面，該光電元件結構係設於該犧牲層之另一面，該剝離結構包含有：一金屬層，其係設於光電元件結構遠離犧牲層之一面，該金屬層具有至少一圖樣，在相鄰之圖樣之間具有一外部通道，該圖樣具有至少一內部通道。
  2. 如申請專利範圍第1項所述之用於光電元件之基板的剝離結構，其中該內部通道係設於該圖樣之至少一側或至少一角。
  3. 如申請專利範圍第2項所述之用於光電元件之基板的剝離結構，其中該內部通道係為一多邊形。
  4. 如申請專利範圍第3項所述之用於光電元件之基板的剝離結構，其中該內部通道為長條形或三角形。
  5. 如申請專利範圍第4項所述之用於光電元件之基板的剝離結構，其中該圖樣係為多邊形。
  6. 如申請專利範圍第5項所述之用於光電元件之基板的剝離結構，其中該圖樣為矩形。
TW100130742A 2011-08-26 2011-08-26 用於光電元件之基板的剝離結構 TWI585990B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW100130742A TWI585990B (zh) 2011-08-26 2011-08-26 用於光電元件之基板的剝離結構
US13/236,859 US8497421B2 (en) 2011-08-26 2011-09-20 Lift-off structure for substrate of a photoelectric device and method thereof
EP11401601.7A EP2562825B1 (en) 2011-08-26 2011-09-27 Lift-off structure for substrate of a photoelectric device and method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100130742A TWI585990B (zh) 2011-08-26 2011-08-26 用於光電元件之基板的剝離結構

Publications (2)

Publication Number Publication Date
TW201310670A true TW201310670A (zh) 2013-03-01
TWI585990B TWI585990B (zh) 2017-06-01

Family

ID=44883144

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100130742A TWI585990B (zh) 2011-08-26 2011-08-26 用於光電元件之基板的剝離結構

Country Status (3)

Country Link
US (1) US8497421B2 (zh)
EP (1) EP2562825B1 (zh)
TW (1) TWI585990B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3091328A1 (fr) 2018-12-31 2020-07-03 Zedel Dispositif d’équilibrage améliorant le maintien sur la tête d’une lampe frontale

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5626687A (en) * 1995-03-29 1997-05-06 The United States Of America As Represented By The United States Department Of Energy Thermophotovoltaic in-situ mirror cell
NL1010635C2 (nl) * 1998-11-23 2000-05-24 Stichting Energie Werkwijze voor het vervaardigen van een metallisatiepatroon op een fotovoltaïsche cel.
US7427526B2 (en) * 1999-12-20 2008-09-23 The Penn State Research Foundation Deposited thin films and their use in separation and sacrificial layer applications
US8173891B2 (en) * 2002-05-21 2012-05-08 Alliance For Sustainable Energy, Llc Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps
JP4097510B2 (ja) * 2002-11-20 2008-06-11 株式会社沖データ 半導体装置の製造方法
JP4136795B2 (ja) * 2003-06-03 2008-08-20 株式会社沖データ 半導体装置の製造方法
JP4315744B2 (ja) * 2003-06-25 2009-08-19 株式会社沖データ 積層体及び半導体装置の製造方法
JP4518886B2 (ja) * 2004-09-09 2010-08-04 シャープ株式会社 半導体素子の製造方法
JP2008053250A (ja) * 2006-08-22 2008-03-06 Sony Corp 半導体装置の製造方法
WO2009005824A1 (en) * 2007-07-03 2009-01-08 Microlink Devices, Inc. Thin film iii-v compound solar cell
EP2521189A3 (en) * 2011-04-29 2013-05-01 Institute of Nuclear Energy Research Atomic Energy Council Lift-off structure for substrate of a photoelectric device and the method thereof

Also Published As

Publication number Publication date
TWI585990B (zh) 2017-06-01
US20130048058A1 (en) 2013-02-28
EP2562825A2 (en) 2013-02-27
EP2562825B1 (en) 2019-01-16
EP2562825A3 (en) 2013-09-25
US8497421B2 (en) 2013-07-30

Similar Documents

Publication Publication Date Title
TWI660520B (zh) 經由印刷方法整合磊晶剝離太陽能電池與小型拋物線集光器陣列
CN102222734B (zh) 一种倒置太阳能电池制作方法
TWI445189B (zh) 光電元件之基板剝離的結構及其方法
AU2006276661A1 (en) Method for manufacturing photoelectric conversion element and the photoelectric conversion element
CN105470317A (zh) 一种柔性衬底GaAs薄膜电池及其制备方法
JP2014053459A (ja) 光電変換素子の製造方法
CN104388092A (zh) Ⅲ-ⅴ半导体材料非选择性湿法腐蚀液及制备方法与应用
CN102244151A (zh) 一种太阳能电池的制作方法
CN104347359A (zh) 一种高效的衬底剥离方法
TWI585990B (zh) 用於光電元件之基板的剝離結構
KR20120033435A (ko) 고효율 연성 캘코파이럿계 화합물 반도체 박막태양전지의 제조 방법
CN103187250A (zh) 多次外延生长方法
EP2521189A2 (en) Lift-off structure for substrate of a photoelectric device and the method thereof
US8614395B1 (en) Solar cell with back side contacts
CN104377301A (zh) 一种ⅲ-ⅴ族化合物半导体霍尔元件及其制备方法
CN105336796B (zh) 倒置结构的双面受光GaAs多结太阳电池及其制备方法
Cruz-Campa et al. Back-contacted and small form factor GaAs solar cell
CN104157739A (zh) 对不合格硅片的处理方法
TWI496308B (zh) Thin film solar cell and manufacturing method thereof
CN103811992A (zh) 一种半导体激光器芯片及其制造方法
CN108091712A (zh) 一种太阳能电池及其芯片和该芯片的制备方法
KR101359407B1 (ko) 실리콘 웨이퍼의 텍스처링 방법
KR101360710B1 (ko) 포토 레지스트를 이용한 전극의 패터닝 방법과 이에 의해 제조된 태양전지 모듈용 기판 및 태양전지 모듈
CN118507599B (zh) 一种柔性太阳能电池及其制备方法
TW201804627A (zh) 太陽能電池及其模組

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees