TW201307597A - Sputtering target - Google Patents

Abstract

The purpose of the invention is to provide a sputtering target, which is designed for increased target material life and limits deformation due to external forces of the target material that is consumed during sputtering. This sputtering target comprises a plate-shaped backing plate and target material. In the sputtering target (100), the target material has a plate-shaped base that contacts the backing plate, and a protruding part that is formed integrally on the center of the base surface that is on the side opposite the surface in contact with the backing plate and coaxially with the base. In the sputtering target (200), the target material has a plate-shaped base that contacts the backing plate, and a protruding part that is formed integrally on the center of the surface of the base in contact with the backing plate and coaxially with the base. The backing plate has a recessed part at the center of the backing plate surface that is in contact with the target material into which the protruding part of the target material fits.

Description

Sputter target

The present invention relates to a sputtering target used when a thin film is formed on a substrate by sputtering.

A wiring film, an electrode, or the like used for a liquid crystal display, a plasma display, a thin film sensor, or the like for producing a thin film element on a glass substrate. In the past, a pure Cr film, a pure Ta film, and a pure Ti film which are high melting point metals have been mainly used. Or a pure metal film, or an alloy film thereof.

In addition, in recent years, in order to prevent signal delay, the wiring film and the electrode film are required to have low resistance, low stress, and stability of these characteristics in order to increase the size of the display and the high definition. Therefore, a high-purity aluminum film having a lower electrical resistance than the above metal film is used.

The metal thin film formed on the substrate is formed by a so-called sputtering method, that is, a plasma discharge is formed between the substrate and a target material (material) when the thin film is formed, and ionized argon is used. The energy striking the target strikes the atoms that make up the target, allowing the atoms to build up on the substrate to form a thin film.

A sputtering apparatus for realizing a sputtering method is capable of arranging a sputtering target having a target at a predetermined position in a chamber in which a plasma discharge space is formed.

Sputtering targets typically place the target on a support member called a support plate. In sputtering, the support plate can be cooled by a cold medium such as cooling water. In sputtering, the impact energy of the ionized argon will cause the target temperature to l, by cooling the support plate, the temperature of the target can be prevented from rising excessively.

In general, like this conventional sputtering target, the portion that is consumed by the target by sputtering is not uniform to the target, particularly when magnetron sputtering is used to increase the sputtering efficiency. The magnetic field on the surface of the target concentrates the electrons on a specific orbit, so the surface of the target tends to be partially consumed. In particular, when a target of a sputtering target is subjected to magnetron sputtering, it tends to be consumed in a ring shape from the center of the target.

If the target of the sputtering target is locally consumed violently and the target has to be replaced, research on a technique for prolonging the life of the target is underway.

For example, the sputtering target disclosed in Patent Document 1 includes a support plate having an annular concave portion in the vicinity of the peripheral edge portion, and an annular convex portion in the vicinity of the peripheral edge portion (which can be fitted to the aforementioned Target in the recess). In other words, the sputtering target disclosed in Patent Document 1 has a target which is thickened in a ring shape in the vicinity of the peripheral edge portion.

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-144186

However, in the target of the sputtering target in the sputtering, the splash surface is heated by the impact energy of the ionized argon, but the surface in contact with the support plate is cooled. In this way, the target of the sputtering target is heated while the splash surface is heated but the surface in contact with the support plate is cooled, so the temperature of the splash surface and the temperature of the surface in contact with the support plate are different. Thermal stress is applied to the target during sputtering.

Further, in a state where the sputtering target is placed in the chamber of the sputtering apparatus, various external forces are applied to the target. For example, for the target, a negative pressure due to the vacuum state in the chamber is applied, and for the surface of the target that is in contact with the support plate, the supply pressure of the cooling medium due to the supply of the cold medium to the support plate is applied. pressure).

As described above, in the sputtering, an external force such as thermal stress, negative pressure, and pressing force is applied to the target of the sputtering target, and deformation of the target may occur during sputtering.

In particular, if the target is subjected to magnetron sputtering, the splash surface of the target will be partially consumed (sputtered) in a ring shape, which may cause significant deformation of the target due to the external force applied during sputtering. .

Further, the sputtering target disclosed in Patent Document 1 does not consider the deformation of the target in sputtering at all.

As described above, if the target material is locally consumed and deformed in the sputtering process, internal defects such as cracks may occur in the target structure. Further, in the case where an internal defect occurs in the target, the electric charge is likely to concentrate on the internal defect during sputtering, and abnormal discharge is likely to occur, and the film formed by sputtering is likely to be abnormal and defective.

Therefore, an object of the present invention is to provide a sputtering target, which can achieve a long life of a target, and can suppress deformation of a target partially consumed by sputtering due to an external force.

The present inventors have found that in order to solve the above problems, in order to solve the above problems, it has been found that the solution of the following structure is obtained to achieve the completion of the present invention.

[1] A sputtering target comprising a plate-shaped support plate and a sputtering target of a target placed on the support plate; wherein the target has a plate-shaped base portion and a convex portion; The base portion is in contact with the support plate, and the convex portion is formed at a central portion of one surface of the base portion opposite to the surface in contact with the support plate, and is formed coaxially and integrally with the base portion.

[2] The sputtering target according to [1] above, wherein the convex portion has a truncated cone shape.

[3] A sputtering target comprising a plate-shaped support plate and a sputtering target of a target placed on the support plate; wherein the target has a plate-shaped base portion and a convex portion; a base portion that is in contact with the support plate; the convex portion is formed at a central portion of a surface of the base portion that is in contact with the support plate, and is integrally formed coaxially with the base portion; the support plate is in the foregoing The central portion of the surface in contact with the target has a concave portion that is fitted to the convex portion of the target.

[4] The sputtering target according to [3] above, wherein the convex portion has a cylindrical shape.

[5] A target for a target placed on a support plate in a sputtering target; characterized by having a plate-like base portion and a convex portion; the plate-shaped base portion is opposite to the support plate Contacting the convex portion at a central portion of a surface opposite to a surface of the base portion that is in contact with the support plate, and being coaxial with the base portion to make.

[6] The target according to the above [5], wherein the convex portion has a truncated cone shape.

[7] A target which is a target for mounting on a support plate in a sputtering target; characterized by having a plate-like base portion and a convex portion; the plate-shaped base portion is opposite to the aforementioned support plate The convex portion is formed at a central portion of a surface of the base portion that is in contact with the support plate, and is coaxial with the base portion and integrally formed.

[8] The target according to the above [7], wherein the convex portion has a cylindrical shape.

[9] The target according to the above [7], wherein the convex portion is fitted to a concave portion formed at a central portion of a surface of the support plate that is in contact with the target.

[10] A support plate which is a support plate for supporting a target in a sputtering target, characterized in that a concave portion is provided at a central portion of a surface in contact with the target.

[11] The support plate according to [10] above, wherein the concave portion has a cylindrical shape.

[12] The support plate according to [10] or [11], wherein the concave portion is fitted to a convex portion formed at a central portion of a surface of the target that is in contact with the support plate.

Since the sputtering target of the present invention has a target having a thick thickness at the center portion which is strongly consumed at the time of sputtering, it is possible to extend the life. Therefore, the sputtering target of the present invention can be sputtered for a longer period of time.

Further, in the sputtering target of the present invention, the thickness of the central portion is made thicker depending on the height of the convex portion of the target, so that the target is consumed (sputtered) even during sputtering, and after the consumption (with splashing) The target of the etched shape is subjected to external stress such as thermal stress, negative pressure, and cooling medium supply pressure (pressure), and the deformation of the target can be suppressed.

(Sputter target structure of an embodiment of the present invention)

The "sputter target" of the present invention is a sputtering device such as a magnetron sputtering device, and is formed by a user who forms a metal film such as a wiring film or an electrode film on a substrate; The "target" of the surface (the surface called the splash surface or the splash surface) and the "support plate" which supports the target from the back side (the side opposite to the splash surface) during sputtering.

Fig. 1 shows the structure of a sputtering target 100 according to a first embodiment of the present invention. The sputtering target 100 according to the first embodiment of the present invention includes a support plate 1 having a plate shape (preferably a circular plate shape, that is, a disk shape), and a target 2 that can be placed on the support plate 1 . The target 2 has a base portion 21 and a convex portion 22 having a plate shape (preferably a circular plate shape, that is, a disk shape); the base portion 21 is in contact with the support plate 1, and the convex portion 22 is at the base portion 21 The central portion of one surface on the opposite side to the surface in contact with the support plate 1 is formed coaxially and integrally with the base portion 21. Fig. 1(a) is a perspective view showing a part of the sputtering target 100 according to the first embodiment of the present invention, and Fig. 1(b) is a partial cross-sectional view showing the sputtering target 100.

The support plate 1 is the target 2 from the back side during sputtering (with the splash surface) On the opposite side of the supporter, one side of the support plate 1 opposite to the surface in contact with the target 2 is cooled by a cold medium such as cooling water. The support plate 1 has a circular flat shape (that is, a disk shape) in the first embodiment. In the present invention, the shape of the support plate may be a plate shape, and is not limited to a disk shape.

Further, the material constituting the support plate 1 is not particularly limited, and includes, for example, a metal. In the present embodiment, for example, it is composed of an aluminum alloy (for example, Al-2024 or the like).

The support plate 1 has a disk shape as shown in Fig. 1, and the diameter d1 of the support plate 1 is, for example, 300 mm to 600 mm, preferably 400 mm to 600 mm, more preferably 500 mm to 600 mm, and is 524 mm in the present embodiment. Further, the thickness Y1 of the support plate 1 is, for example, 5 mm to 20 mm, preferably 5 mm to 15 mm, more preferably 5 mm to 10 mm, and is 8.8 mm in the present embodiment.

The target 2 can be placed on the support plate 1 and supported by the support plate 1. Therefore, the side of the target 2 opposite to the surface in contact with the support plate 1 serves as a splash surface. The target 2 may be made of a conductive material, and usually contains a metal. For example, it may be made of aluminum or the like, and is preferably made of aluminum. In the present embodiment, it is particularly preferably made of aluminum.

In the present invention, the target 2 is a convex portion (or protruding portion) 22 including a base portion 21 and a central portion thereof.

The shape of the base portion 21 is not particularly limited as long as it is a plate shape, and is preferably formed into a circular flat shape (that is, a disk shape) as shown in Fig. 1. In the present invention, the shape of the base portion 21 is not limited. It is disc shaped. The base portion 21 can be placed in contact with the support plate 1 on the surface 21b.

In the present invention, the central portion of the base portion 21 refers to the center of the geometric shape of the base portion 21 and its surroundings. For example, when the base portion 21 is circular as shown in Fig. 1, it means that the center of the circle and its surroundings are square. The case of a rectangle or a polygon such as a quadrangle means the intersection of the diagonal and its surroundings. Further, in the present invention, the axis of the base portion 21 means an axis extending from the center of the geometric shape of the base portion 21 in a direction perpendicular to the plane of the plate-like base portion 21 (for example, the axis L of Fig. 1).

The axis L of the base portion 21 is preferably coaxial with the axis of the support plate 1, that is, the axis extending from the center of the geometric shape of the support plate 1 toward the direction perpendicular to the plate surface. In particular, when both the base portion 21 and the support plate 1 are in the shape of a disk, the base portion 21 and the support plate 1 can be arranged concentrically.

When the base portion 21 of the target 2 has a disk shape, the diameter of the base portion 21 (that is, the diameter of the surface 21b of the base portion 21 in contact with the support plate 1) d2 is, for example, 100 mm to 500 mm, preferably 300 mm to 500 mm, and more. It is preferably 400 mm to 500 mm, and is 443 mm in this embodiment. Further, the thickness of the base portion 21 (that is, the average thickness of the portion excluding the convex portion 22 of the target 2) Y2 is, for example, 5 mm to 20 mm, preferably 7.5 mm to 20 mm, more preferably 10 mm to 20 mm, in the present embodiment. It is 12.7mm. Further, in the present invention, the diameter of the one surface 21a on the opposite side of the surface 21b of the base portion 21 in contact with the support plate 1 is, for example, 100 mm to 500 mm, preferably 300 mm to 500 mm, more preferably 400 mm to 500 mm, and is in the present embodiment. 437mm, which is the same as or different from the diameter d2 of the surface 21b of the base 21 which is in contact with the support plate 1, preferably shorter than d2 by 0mm~30mm, more preferably short 0mm~20mm, especially good. It is short 0mm~10mm. That is, the base 21 may have a truncated cone shape.

In the present embodiment, the ratio of d1:d2 is not particularly limited, and is, for example, 1:0.5 to 1:0.9, preferably 1:0.7 to 1:0.9, and more preferably 1:0.8 to 1:0.9.

The convex portion 22 protrudes from a central portion of the base portion 21, that is, a central portion of a surface (i.e., a splash surface) 21a opposite to the surface 21b of the base portion 21 that is in contact with the support plate 1, and the convex portion 22 can be formed and The axis L of the base 21 is coaxial and integral with the base 21. As shown in Fig. 1, the convex portion 22 is preferably formed into a truncated cone shape for the reason that the splash surface is smoothed (smoothed) or the like. However, the shape of the convex portion 22 is not limited to a truncated cone shape, and may be a cylindrical shape or a spherical shape.

When the convex portion 22 has a truncated cone shape, the diameter d3 of the upper surface 22a of the convex portion 22 is, for example, 100 mm to 200 mm, preferably 100 mm to 175 mm, more preferably 100 mm to 150 mm, and is 123 mm in the present embodiment. The diameter d4 of the lower surface of the convex portion 22 (on the same plane as the surface 21a) is, for example, 120 mm to 220 mm, preferably 120 mm to 195 mm, more preferably 120 mm to 170 mm, and is 143 mm in the present embodiment. Further, the distance from the upper surface to the lower surface of the convex portion 22, that is, the thickness (height) Y3 of the convex portion 22 is, for example, 1 mm to 5 mm, preferably 1 mm to 4 mm, more preferably 1 mm to 3 mm, and is 2.3 in the present embodiment. Mm. The ratio of d3:Y3 is, for example, 20:1 to 200:1, preferably 20:1 to 150:1, more preferably 20:1 to 100:1.

Further, the convex portion 22 of the target 2 has a truncated cone shape, and the ratio of the diameter d3 of the upper surface of the convex portion 22 to the diameter d4 of the lower bottom surface, that is, d3:d4=1:1 to 1:2, is preferably 1:1~1:1.75, more preferably 1:1~1:1.5. Furthermore, the diameter d2 of the base portion 21 and the diameter d3 of the bottom surface of the convex portion 22 are The ratio is d2:d3=5:1~2:1, preferably 5:1~4:1, more preferably 5:1~3:1.

In the target 2 of the above structure, among the surface 21a of the base portion 21, the region portion other than the region where the convex portion 22 is formed and the surface 22a of the convex portion 22 are splashed surfaces that are splashed. Further, when the convex portion 22 has a truncated cone shape, the inclined surface between the splash surface 22a of the convex portion 22 and the splash surface 21a of the base portion 21 also serves as a splash surface.

Therefore, in the sputtering target of the present invention, the target 2 is provided with the base portion 21 and the convex portion 22 as described above; the base portion 21 is in contact with the support plate 1; the convex portion 22 is on the splash surface 21a of the base portion 21 The central portion is formed coaxially with the axis L of the base portion 21 and integrated with the base portion 21. In other words, the sputtering target 100 according to the first embodiment of the present invention is characterized in that the thickness of the target 2 is made thicker at the center portion in accordance with the component of the thickness Y3 of the convex portion 22.

The method of placing the target 1 on the support plate 1 is not particularly limited, and for example, it can be placed by a method such as diffusion bonding or solder bonding.

In the conventional sputtering target, in the sputtering, the central portion of the target is consumed in a ring shape. On the other hand, in the target material 2 of the sputtering target 100 of the present embodiment, the thickness of the central portion which is severely consumed by splashing is increased, so that the annular portion of the central portion, particularly the central portion, can be maintained for a long period of time. (Splashing), and can achieve long life. Further, in the sputtering target 100 according to the first embodiment of the present invention, by providing the convex portion 22 at the center portion of the target material, the life is 1.05 to 1.15 times, preferably 1.05 to 1.2 times, compared to the case where the convex portion is not provided. More preferably, it is 1.05~1.25 times.

Further, the sputtering target 100 according to the first embodiment of the present invention is The central portion of the target is provided with a convex portion 22, and even if the target material is consumed during sputtering, the external force caused by the thermal stress, the pressing force caused by the cooling, the negative pressure, and the like can be suppressed, and the target is significantly caused by the sputtering. Deformation.

Further, in the sputtering target 100 according to the first embodiment of the present invention, it is preferable that the convex portion 22 is formed in a truncated cone shape to smoothen (smooth) the splash surface, so that the above effect can be obtained, that is, even in the case of In the sputtering, the target is consumed, and the external force caused by the thermal stress, the pressing force caused by the cooling, the negative pressure, and the like can be suppressed, and the target is significantly deformed in the sputtering.

Fig. 2 shows the structure of a sputtering target 200 according to a second embodiment of the present invention. The sputtering target 200 according to the second embodiment of the present invention includes a support plate 3 having a plate shape (preferably a circular plate shape, that is, a disk shape), and a target 4 placed on the support plate 3. The target 4 has a base portion 41 and a convex portion 42 having a plate shape (preferably a circular plate shape, that is, a disk shape); the base portion 41 is in contact with the support plate 3; the convex portion 42 is at the base portion 41 The central portion of the surface in contact with the support plate 3 is formed coaxially and integrally with the base portion 41. Further, the support plate 3 has a concave portion 32 that can be fitted into the convex portion 42 of the target 4 at a central portion of the surface in contact with the target 4. Fig. 2(a) is a perspective view showing a part of the sputtering target 200 according to the second embodiment of the present invention, and Fig. 2(b) is a partial cross-sectional view showing the sputtering target 200.

The support plate 3 is not particularly limited as long as it can support the target 4, and includes, for example, a metal, for example, aluminum, an aluminum alloy, or the like, preferably an aluminum alloy, more preferably in the present embodiment. It is made of an aluminum alloy (for example, Al-2024, etc.). The support plate 3 is provided with a substrate 31 having a plate shape, preferably a circular plate shape (that is, a disk shape), and a target material on the substrate 31 The central portion of the contact surface 4 has a concave portion 32 which is fitted to the convex portion 42 in accordance with the shape of the convex portion 42 of the target 4 described in detail below. Further, in the present invention, the shape of the base material 31 is not limited to a disk shape as long as it is a plate shape.

When the base material 31 has a disk shape, the diameter of the base material 31, that is, the diameter d5 of the support plate 3 is, for example, 100 mm to 600 mm, preferably 300 mm to 600 mm, more preferably 500 mm to 600 mm, and 524 mm in the present embodiment. . Further, the thickness of the base material 31, that is, the thickness Y4 of the support plate 3 is, for example, 5 mm to 20 mm, preferably 5 mm to 15 mm, more preferably 5 mm to 10 mm, and is 8.8 mm in the present embodiment.

A recess 32 that is engageable with the convex portion 42 of the target 4 is provided at a central portion of the support plate 3. In the present invention, the concave portion 32 of the support plate 3 and the convex portion 42 of the target 4 are "fitted" to mean that the support plate 3 and the target member 4 are detachably or inseparable, so that the concave portion 32 of the support plate 3 and The projection 42 of the target 4 is at least partially bonded or engaged. The shape of the recessed portion 32 is not particularly limited as long as it can be fitted to the convex portion 42 and is, for example, a cylindrical shape or a spherical shape. The shape of the concave portion 32 is preferably a columnar shape because of ease of processing or the like.

The base material 31 of the support plate 3 has a disk shape and the concave portion 32 has a cylindrical shape. The center of the concave portion 32 (that is, the center of the cross-sectional circle of the cylindrical portion of the concave portion) preferably coincides with the center of the base material 31.

The depth of the concave portion 32 (the height of the cylindrical portion in the case of a cylindrical shape) is not particularly limited as long as it can be fitted to the convex portion 42 and is, for example, 1 mm to 5 mm, preferably 1 mm to 4 mm, more preferably for 1mm~3mm.

The recessed portion 32 has a cylindrical shape. The diameter of the cross-sectional circle of the recessed portion is not particularly limited as long as it can be fitted to the convex portion 42. For example, it is 50 mm to 200 mm, preferably 50 mm to 150 mm, and more preferably 75mm~150mm, especially preferably 100mm~150mm, the diameter of the section circle: the ratio of the height of the cylinder is 150:1~10:1, preferably 125:1~10:1, more preferably 100:1~10:1 .

Further, the base material 31 of the support plate 3 has a disk shape and the concave portion 32 has a cylindrical shape. The diameter of the base material 31: the diameter of the concave portion 32 is 2:1 to 10:1, preferably 2:1 to 7: 1, more preferably 2:1~5:1.

The target 4 includes a base portion 41 and a convex portion 42 at a central portion thereof. The target 4 can be placed on the support plate 3 and supported while the convex portion 42 is fitted into the concave portion 32 of the support plate 3. Therefore, the one surface 41a on the opposite side of the surface of the target 4 that is in contact with the support plate 3 serves as a splash surface.

The target 4 may be made of a conductive material, and usually contains a metal. For example, it may be made of aluminum or the like, and is preferably made of aluminum. In the present embodiment, it is particularly preferably made of aluminum.

The shape of the base portion 41 of the target 4 is not particularly limited as long as it is a plate shape, and as shown in Fig. 2, it is preferably formed into a circular flat plate shape (i.e., a disk shape). However, the shape of the base portion 41 is not limited to a disk shape.

The base portion 41 of the target 4 can be placed on the one surface 31a on the side where the concave portion 32 of the base material 31 of the support plate 3 is formed (except for the portion of the concave portion 32). At a central portion of the surface of the base portion 41 of the target 4 that is in contact with the support plate 3, the convex portion 42 that can be fitted into the concave portion 32 of the support plate 3 is coaxial with the base portion 41. Formed in one piece.

In the present invention, the central portion of the base portion 41 refers to the center of the geometric shape of the base portion 41 and its surroundings. For example, as shown in Fig. 2, when the base portion 41 is circular, it means that the center of the circle and its surroundings are square. The case of a rectangle or a polygon such as a quadrangle refers to the intersection of the diagonal and its surroundings. Further, in the present invention, the axis of the base portion 41 means an axis extending from the center of the geometric shape of the base portion 41 in a direction perpendicular to the plane of the plate-like base portion 41 (for example, the axis L of Fig. 2).

The axis L of the base portion 41 is preferably coaxial with the axis of the support plate 3, that is, the axis of the support plate 3 extending from the center of the geometric shape toward the direction perpendicular to the plate surface. Therefore, in this case, the target 4 is placed on the support plate 3 in a concentric shape.

The base portion 41 of the target 4 has a disk shape, and the diameter d6 of the base portion 41 (that is, the diameter of the surface of the base portion 41 in contact with the support plate 3) d6 is, for example, 100 mm to 500 mm, preferably 300 mm to 500 mm, more preferably 400mm~500mm, in this embodiment is 443mm. Further, the thickness Y5 of the base portion 41 is, for example, 5 mm to 20 mm, preferably 7.5 mm to 20 mm, more preferably 10 mm to 20 mm, and is 12.7 mm in the present embodiment. Further, in the present invention, the diameter of the opposite side (i.e., the splash surface) 41a of the surface of the base portion 41 in contact with the support plate 3 is, for example, 100 mm to 500 mm, preferably 300 mm to 500 mm, more preferably 400 mm to 500 mm. In the present embodiment, the diameter 341 is 437 mm, which is the same as or different from the diameter d6 of the surface of the base portion 41 which is in contact with the support plate 3. However, it is preferably shorter than d6 by 0 mm to 30 mm, preferably shorter by 0 mm to 20 mm, and more preferably shorter by 0 mm. ~10mm. That is, the base 41 can be Conical shape.

The ratio (d5:d6) of the diameter d6 of the base portion 41 of the target 4 to the diameter d5 of the support plate 3 is not particularly limited and may be 1:0.5 to 1:0.9, preferably 1:0.7 to 1:0.9. More preferably 1:0.8~1:0.9.

The convex portion 42 of the target 4 protrudes from the side of the surface of the target 4 facing the support plate 3, and forms a fitting portion that can be fitted into the concave portion 32 of the support plate 3. The shape of the convex portion 42 of the target 4 is preferably, for example, a shape in which a cylindrical shape, a spherical shape, or the like is formed, and a cylindrical shape is particularly preferable for the reason of ease of processing or the like. However, it is not limited to a cylindrical shape.

In the case where the convex portion 42 of the target 4 has a cylindrical shape, the diameter of the convex portion 42 (that is, the diameter of the cross-sectional circle of the cylindrical portion of the convex portion 42) d7 is, for example, 100 mm to 200 mm, preferably 100 mm to 175 mm, more preferably 100 mm to 150 mm, which is 122.8 mm in this embodiment. In addition, the convex portion 42 of the target 4 has a cylindrical shape, and the thickness (ie, the height of the cylinder) Y6 of the convex portion 42 is, for example, 1 mm to 5 mm, preferably 1 mm to 4 mm, more preferably 2 mm to 4 mm, in the embodiment. It is 3.0mm. The convex portion 42 of the target 4 has a cylindrical shape, and the ratio of d7:Y6 may be 20:1 to 200:1, preferably 20:1 to 150:1, more preferably 20:1 to 100:1.

In the case where the base portion 41 of the target 4 has a disk shape and the convex portion 42 has a cylindrical shape, it is preferable that the center of the cross section of the cylinder of the center of the target 4 and the convex portion 42 is uniform, and it is preferable that the base portion 41 is formed. The axis L and the axis of the convex portion 42 (i.e., the axis extending from the center of the cross-sectional circle toward the vertical direction) are coaxial, and the base portion 41 and the convex portion 42 are integrally formed concentrically.

Further, it is preferable to make the shape of the convex portion 42 of the target 4 and the support plate 3 The recesses 32 have the same shape, and are particularly preferably cylindrical in shape based on the ease of processing and the like. In this case, it is particularly preferable that the diameter of the convex portion 42 of the target 4 and the inner diameter of the concave portion 32 of the support plate 3 are substantially the same, and the convex portion 42 and the concave portion 32 can be fitted.

In the target 4, the diameter d6 of the base portion 41 and the diameter d7 of the convex portion 42 are, for example, d6:d7=5:1 to 2:1, preferably 5:1 to 4:1, more preferably 5:1. 3:1.

The method of placing the target 4 on the support plate 3 is not particularly limited as long as the convex portion 42 of the target 4 and the concave portion 32 of the support plate 3 can be fitted, and for example, diffusion bonding, solder bonding, or the like can be employed. method.

In the target 4 of the above configuration, the one surface 41a on the side opposite to the side in contact with the support plate 3 is a splashed surface that is splashed.

As described above, in the sputtering target 200 of the present invention, the thickness of the target 4 is thickened at the center portion in accordance with the component of the thickness Y6 of the convex portion 42. In this manner, the target portion 4 of the sputtering target 200 of the present embodiment is thickened by the thickness of the central portion which is strongly consumed by the splashing, so that the central portion, particularly the central portion, can be kept resistant to the ring shape for a long period of time ( It is spoiled and can last longer. Further, in the sputtering target 200 according to the second embodiment of the present invention, by providing the convex portion 42 at the central portion of the target, the life is 1.05 to 1.15 times, preferably 1.05 to 1.2 times, compared to the case where the convex portion is not provided. More preferably, it is 1.05~1.25 times.

Further, in the sputtering target 200 according to the second embodiment of the present invention, since the convex portion 42 is provided at the central portion of the target 4, even if the target is consumed during sputtering, the thermal stress and cooling can be suppressed. Pressing pressure, negative pressure Such external forces cause significant deformation of the target during sputtering.

Further, in the sputtering target 200 according to the second embodiment of the present invention, the above-described effects can be obtained by forming the convex portion 42 into a cylindrical shape, that is, even if the target material is consumed during sputtering, the thermal stress can be suppressed. The external force of pressing force, negative pressure, etc. caused by cooling causes significant deformation of the target during sputtering.

(The amount of deformation or deformation of the sputtering target during sputtering)

In the sputtering, the splash surfaces of the targets 2, 4 of the sputtering targets 100 and 200 are heated by the impact energy of the ionized argon, but one side of the contact side with the support plates 1, 3 is The support plates 1, 3 are cooled and cooled by a cold medium such as cooling water. In this manner, each of the targets 2, 4 of the sputter targets 100 and 200 is heated by the splashed surface and the opposite side of the splashed surface (ie, the targets 2, 4 and the support plate 1 respectively) The side of the 3 contact side is cooled, so that a temperature difference is generated on the side of the splash surface and the opposite side, and thermal stress is applied to the target.

Further, in a state where the sputtering target 100 or 200 is disposed in the chamber of the sputtering apparatus, the target 2, 4 is applied with a negative pressure due to the vacuum state in the chamber, and the supporting plate 1 is provided. 3 Cooling media supply pressure (pressure) caused by the supply of cold media.

As described above, in the sputtering, the targets 2, 4 of the sputtering targets 100, 200 are subjected to external forces such as thermal stress, negative pressure, and pressing force, and therefore the target is deformed during sputtering, and is preferably evaluated. It will affect the deformation of the target. In addition, in the present specification, the "deformation" and the "deformation amount" of the target are deformed or warped after the target is warped by an external force. The state is called "deformation"; by simulation or direct measurement, the degree of deformation relative to the original shape is expressed by the number (mm) as the "deformation amount".

<Presumption of the influence of the target on the deformation of the target during sputtering>

Before analyzing the amount of deformation in the target 2,4 sputtering, the amount of deformation of the target after the sputtering target is used is estimated to be caused by thermal stress, negative pressure, and influence on the deformation of the target. External force such as pressing force caused by cooling. Usually this external force cannot be actually measured in sputtering.

The estimation experiment of the external force is to first measure the amount of deformation using a conventional sputtering target. The conventional sputtering target used for the measurement is a conventional circular plate-shaped (ie, disk-shaped) support plate (a disk made of an aluminum alloy having a diameter of 524 mm and a thickness of 8.8 mm) (hereinafter referred to as " In the usual support plate"), a conventional circular flat plate-shaped (ie, disk-shaped) target (aluminum disk having a diameter of 443 mm and a thickness of 12.7 mm) (hereinafter referred to as "normal target") is used. The diffusion bonding is performed on the coaxial line, and thus a sputtering target (hereinafter referred to as "normal sputtering target" or "sample 5") which is generally used is formed.

Fig. 3 is a graph showing the measured results of the target deformation amount of the conventional sputtering target after use. In Fig. 3, the horizontal axis represents the distance (mm) from the center of the target of the sputtering target (hereinafter referred to as "normal target"), and the vertical axis represents the measured value of the deformation amount (mm). As can be seen from the curve A of Fig. 3, in general, the target has a maximum deformation amount (= 2.264 mm) at the center of the splash surface, and the amount of deformation from the center to the radially outer side is smaller.

Figure 4 is a graph showing the actual thickness of the splash area of a typical target of a conventional sputter target after use, representing the remaining thickness profile of the sputter shape. Figure 4 In the middle, the horizontal axis represents the distance (mm) from the center of the normal target, and the vertical axis represents the remaining thickness (mm) of the normal target after use. The normal target after use has a splash shape represented by the remaining thickness profile of curve B.

Next, deformation analysis is performed using the finite element method (FEM) according to the splash shape of the splash region of the normal target.

Figure 5 is a finite element model showing a conventional sputtering target in sputtering, which is used to resolve and presume forces that would affect the deformation of a typical target. The finite element model 300M shown in Fig. 5 is a normal sputtering target after the imaginary use, and is modeled from the center of the sputtering target (left side of Fig. 5) to the end portion of the radially outer side. Further, in the finite element model 300M, the normal sputtering target after use is formed by joining a normal target 6 to a circular flat plate (disk-shaped) support plate 5, and usually the target 6 has the splash shown in FIG. Eclipse shape. Further, in Fig. 5, the boundary line indicating each element region is omitted.

Further, the finite element model 300M of Fig. 5 is modeled according to the actual splash shape measured in Fig. 4.

The calculation conditions for the deformation analysis are shown in Table 1.

"ANSYS 11.0" in the table can be obtained by CYBERNET SYSTEM.

Fig. 6 is a view showing deformation analysis results of the amount of deformation of the target when temperature and pressure are applied to the finite element model 300M. In Fig. 6, in the normal target 6 of the finite element model 300M, the surface in contact with the support plate 5 is cooled to 60 ° C, and the splash surface temperature is 100 ° C and 6 (b) in Fig. 6(a). The graph is 120 ° C, the 6 (c) diagram is 140 ° C, and the pressure (pressing force) of the side contacting the support plate 5 is set to 0.2 MPa, 0.4 MPa or 0.6 MPa, and then the temperature of both sides of the normal target 6 is made. The temperature is changed to normal temperature and the pressure is removed, and the amount of permanent deformation of the target 6 at this time is usually displayed. In Fig. 6, the horizontal axis represents the distance (mm) from the center of the normal target 6, and the vertical axis represents the amount of permanent deformation (mm).

Fig. 6(a) shows an analysis result of the amount of deformation when the splash surface of the normal target 6 is heated to 100 °C, and the curve C1 shows the permanent state of the normal target 6 when a pressure of 0.2 MPa is applied to one side of the support plate 5 side. The amount of deformation, the curve C2 indicates the amount of permanent deformation of the normal target 6 when a pressure of 0.4 MPa is applied to one side of the support plate 5, and the curve C3 indicates the permanent state of the normal target 6 when a pressure of 0.6 MPa is applied to one side of the support plate 5 side. The amount of deformation.

Further, Fig. 6(b) shows an analysis result of the deformation amount when the splash surface of the normal target 6 is heated to 120 ° C, and the curve D1 shows the normal target 6 when a pressure of 0.2 MPa is applied to one side of the support plate 5 side. The amount of permanent deformation, the curve D2 represents the amount of permanent deformation of the normal target 6 when a pressure of 0.4 MPa is applied to one side of the support plate 5, and the curve D3 represents the normal target 6 when a pressure of 0.6 MPa is applied to one side of the support plate 5 side. The amount of permanent deformation.

Further, Fig. 6(c) shows an analysis result of the amount of deformation when the splash surface of the target 6 is heated to 140 °C, and a curve E1 shows the normal target 6 when a pressure of 0.2 MPa is applied to one side of the support plate 5 side. The amount of permanent deformation, the curve E2 represents the amount of permanent deformation of the normal target 6 when a pressure of 0.4 MPa is applied to one side of the support plate 5, and the curve E3 represents the normal target 6 when a pressure of 0.6 MPa is applied to one side of the support plate 5 side. The amount of permanent deformation.

As can be seen from Fig. 6, in general, the target 6 has a maximum amount of deformation at the center of the splash surface, and the amount of deformation from the center to the radially outer side is smaller. In addition, the greater the pressure, the greater the amount of deformation, but the difference in the temperature of the splash surface has little effect.

Fig. 7 is a graph showing the relationship between the pressure and the maximum deformation amount according to the deformation analysis result of the target. Figure 7 is based on the analysis result of Figure 6. Got it. In Fig. 7, the horizontal axis represents the pressure (MPa) applied to the normal target 6, and the vertical axis represents the maximum deformation amount (mm). As can be seen from Fig. 7, the pressure and the maximum amount of deformation exhibit a relationship of a straight line F, and the maximum amount of deformation increases as the pressure increases. According to the straight line F, the pressure corresponding to the target maximum deformation amount "2.264 mm" of the sputtering target after the actual sputtering use shown in FIG. 3 is "0.279 MPa".

From the above results, it can be estimated that the target and the target at the time of sputtering (Fig. 3 and Fig. 4) were subjected to the pressures and temperatures shown in Table 2 below. In this specification, this pressure is referred to as "estimated external force". In the estimated external force of Table 2, the temperature at which the target is in contact with the support plate is "60 ° C", and the temperature at which the splash surface is applied is "120 ° C". This is based on the result of Fig. 6. That is, the difference in temperature hardly affects the amount of deformation.

Next, using the estimated external force shown in Table 2, the deformation analysis of the finite element method is performed using the finite element model 300M shown in Fig. 5 . The calculation condition for the deformation analysis is that the conditions of Table 1 are used. The deformation analysis result is shown in Fig. 8.

Fig. 8 shows the consistency of the deformation analysis results with respect to the measured deformation value of the target. In Figure 8, curve A shows the use shown in Figure 3. The measured value of the target after the deformation is measured, and the curve G represents the result of the deformation analysis. Further, Fig. 8 is a graph showing the amount of permanent deformation of the target when the temperature is returned to normal temperature and the pressure is removed after applying the estimated external force shown in Table 2 to the target.

As can be seen from Fig. 8, the deformation analysis result is substantially consistent with the measured deformation value. It can also be judged that the estimated external force shown in Table 2 is appropriate as a force applied to the target at the time of sputtering.

<Deformation analysis of target during sputtering>

Using the estimated external force shown in Table 2, the sputtering target 100 of the present embodiment shown in Fig. 1 and the sputtering target 200 of the present embodiment shown in Fig. 2 were subjected to deformation analysis by the finite element method. The calculation condition for the deformation analysis is that the conditions of Table 1 are used.

The structure of the sputtering target used for the deformation analysis is shown in Table 3.

Fig. 9 is a view showing a result of deformation analysis of the amount of deformation when an external force is applied to the target when sputtering is applied. In Figure 9, the horizontal axis represents the center of the target The distance (mm) and the vertical axis indicate the amount of deformation (mm).

Fig. 9(a) shows the deformation of the target in the imaginary sputtering, and shows the amount of deformation of the target when the estimated external force shown in Table 2 is applied. In Fig. 9(a), the curve H1 indicates the deformation analysis result of the sample 1 of Table 3, the curve H2 indicates the deformation analysis result of the sample 2 of Table 3, and the curve H3 indicates the deformation analysis result of the sample 3 of Table 3. The curve H4 indicates the deformation analysis result of the sample 4 of Table 3, and the curve H5 indicates the deformation analysis result of the sample 5 of Table 3.

As can be seen from the figure 9 (a), the target 2 of the sputtering target 100 (Fig. 1) of the sample 1 is thicker than the convex portion 22, and the thickness of the central portion is increased, and thermal stress and negative pressure are applied. The amount of deformation when the external force is estimated by an external force such as a cooling medium supply pressure (pressure) is smaller than that of the sample 5 (a normal sputtering target having a flat plate-shaped target having a uniform thickness). Further, as is clear from the figure 9 (a), the target 4 of the sputtering target 200 (Fig. 2) of the samples 2 to 4 is thickened by the convex portion 42 corresponding to the fitting portion, and the thickness of the central portion is increased. The amount of deformation when the external force is applied is approximately the same amount of deformation as the sample 5 indicating the normal sputtering target, and excessive deformation can be suppressed.

Further, Fig. 9(b) is a permanent deformation of the target after the imaginary sputtering, and shows the amount of permanent deformation of the target when the temperature is returned to normal temperature and the pressure is removed by applying the estimated external force shown in Table 2. In Fig. 9(b), the curve J1 indicates the deformation analysis result of the sample 1 of Table 3, the curve J2 indicates the deformation analysis result of the sample 2 of Table 3, and the curve J3 indicates the deformation analysis result of the sample 3 of Table 3. The curve J4 indicates the deformation analysis result of the sample 4 of Table 3, and the curve J5 indicates the deformation analysis result of the sample 5 of Table 3.

As can be seen from the figure 9(b), the sample 1 of the sputtering target 100 is estimated to be applied. The amount of permanent deformation after the force is smaller than that of the sample 5 of the sputtering target. Further, as is clear from the figure 9(b), the amount of permanent deformation of the samples 2 to 4 of the sputtering target 200 to which the estimated external force is applied is substantially the same as that of the sample 5 indicating the normal sputtering target. The amount of deformation can suppress excessive permanent deformation.

<Deformation Analysis of Target with Sputtered Shape at Sputtering>

Next, deformation analysis is performed after sputtering is generated by sputtering. The calculation condition for the deformation analysis is that the conditions of Table 1 are used. Further, the samples used for the deformation analysis were samples 1 to 5 shown in Table 3.

First, the sputtering shape of the targets of the samples 1 to 5 was set. Fig. 10 and Fig. 11 show the splash shape of the target used for the deformation analysis when the estimated external force is applied.

Fig. 10(a) is a view showing the actual remaining thickness profile (Fig. 4) of the conventional sputtering target after use as shown in Fig. 4, and the target 2 showing the sputtering target 100 (sample 1) The remaining thickness profile of the splash shape. In the tenth (a)th diagram, the horizontal axis represents the distance (mm) from the center of the target 2, and the vertical axis represents the remaining thickness (mm) of the target 2. The target 2 is set to have a splash shape represented by the remaining thickness profile of the curve K.

Fig. 10(b) is a sputtering target 100 (sample 1) at the time of imaginary sputtering, showing a finite element that models a section from the center (left side of the 10th (b) figure) to the radially outer end. Model 100M. Further, in the figure 10(b), the target 2 joined to the support plate 1 has a splash shape indicated by the remaining thickness profile of the curve K of Fig. 10(a). The boundary line indicating each element region is omitted in Fig. 10(b).

Fig. 11(a) is a view showing the actual remaining thickness profile (Fig. 4) of the conventional sputtering target after use as shown in Fig. 4, and the target of the sputtering target 200 (samples 2 to 4) is created. The remaining thickness profile of the splash shape of the material 4. In the 11th (a) diagram, the horizontal axis represents the distance (mm) from the center of the target 4, and the vertical axis represents the remaining thickness (mm) of the target 4. The target 4 is set to have a splash shape expressed by the remaining thickness profile of the curve L1 of Fig. 11(a).

Fig. 11(b) is a sputtering target 200 (samples 2 to 4) at the time of imaginary sputtering, and shows a profile of the end portion from the center (left side of the 11th (b) diagram) to the radially outer side. Finite element model 200M. Further, in the eleventh (b)th view, the target 4 joined to the support plate 3 has a splash shape indicated by the remaining thickness profile of the curve L1 of the eleventh (a)th drawing. The boundary line indicating each element region is omitted in Fig. 11(b).

Further, regarding the sample 5 which is a normal sputtering target, the remaining thickness profile indicating the sputter shape is the actual remaining thickness profile shown in Fig. 4, and the finite element model for deformation analysis is limited using the fifth figure. Element model 300M.

Fig. 12 is a view showing the results of deformation analysis of the amount of deformation when a predetermined external force is applied to a target having a splash shape at the time of sputtering (i.e., a target after sputtering). In Fig. 12, the horizontal axis represents the distance (mm) from the center of the target, and the vertical axis represents the amount of deformation (mm).

Fig. 12(a) is a target deformation which is assumed to have a splash shape during sputtering, and shows a target deformation amount when the estimated external force shown in Table 2 is applied. In Fig. 12(a), the curve P1 represents the deformation analysis result of the sample 1 having the splash shape, and the curve P2 represents the deformation analysis of the sample 2 having the splash shape. As a result, the curve P3 represents the deformation analysis result of the sample 3 having the splash shape, the curve P4 represents the deformation analysis result of the sample 4 having the splash shape, and the curve P5 represents the deformation analysis result of the sample 5 having the splash shape. Each of the virtual samples 1 to 5 has a splash shape (i.e., is sputtered), and each of the above-described finite element models (the case of Fig. 12 (b) described later) is used.

As can be seen from the 12th (a), the target 2 of the sample 1 of the sputtering target 100 is thicker than the convex portion 22, and the amount of deformation when the estimated external force is applied is determined. Sample 5 is approximately the same amount of deformation, and can suppress excessive deformation. Further, the sample 5 is a general sputtering target having a circular flat plate (disc shape) having a uniform thickness. Further, as is clear from the 12th (a) diagram, the target 4 of the samples 2 to 4 of the sputtering target 200 is thicker than the convex portion 42 of the fitting portion, and the thickness of the central portion is increased, and a predetermined external force is applied. The amount of deformation at the time can be suppressed within an allowable range, and excessive deformation can be suppressed.

Further, Fig. 12(b) is a graph showing the permanent deformation of the target having a splash shape after sputtering, and the application of the estimated external force shown in Table 2 to return the temperature of both surfaces of the target to normal temperature and remove the pressure. The amount of permanent deformation of the target. In Fig. 12(b), a curve Q1 represents a deformation analysis result of the sample 1 having a splash shape, a curve Q2 represents a deformation analysis result of the sample 2 having a splash shape, and a curve Q3 represents a test having a splash shape. As a result of the deformation analysis of the sample 3, the curve Q4 indicates the deformation analysis result of the sample 4 having the splash shape, and the curve Q5 indicates the deformation analysis result of the sample 5 having the splash shape.

As can be seen from Fig. 12(b), the amount of permanent deformation of each of the samples 1, 2 having the sputtered shape of the sputter targets 100, 200 after the application of the estimated external force is The sample 5 having a splash shape of the normally sputtered target is smaller. Further, as can be seen from Fig. 12(b), the amount of permanent deformation of the samples 3 and 4 having the sputtering shape of the sputtering target 200 after the application of the external force is estimated to be a splash shape with the sputtering target. Sample 5 has approximately the same amount of permanent deformation, and can suppress excessive permanent deformation.

As described above, the sputtering targets 100 and 200 of the present embodiment each have the targets 2 and 4 having a thickened central portion which is strongly consumed by splashing, so that the life can be extended and the heat is applied during sputtering. The amount of deformation (the amount of deformation during sputtering and the amount of permanent deformation after sputtering) caused by external forces such as stress and negative pressure of the cooling medium (pressure) is a generally circular flat shape having a uniform thickness. The (disk-shaped) target is smaller, or at least has the same amount of deformation, and can suppress excessive deformation.

As described above, in the present invention, the finite element modeling (Fig. 5) is performed based on the amount of deformation of the sputtering target and the sputtering profile (Figs. 3 and 4), and the analysis result (Fig. 6) can be estimated. External force applied during sputtering. Further, according to the sputtering profile of Fig. 4, the sputtering targets of the first embodiment and the second embodiment of the present invention are modeled by finite elements (Fig. 10(b), Fig. 11(b)), As a result of analyzing the estimated external force, it was found that the deformation of the target (both deformation during sputtering and permanent deformation after sputtering) can be suppressed within an allowable range.

Therefore, in the present invention, as in the first embodiment and the second embodiment, by increasing the thickness of the target in the center portion, not only the life of the target can be extended, but also during sputtering and after sputtering. The deformation suppression is within the allowable range.

Since the sputtering target of the present invention has a long life and can suppress deformation during sputtering and permanent deformation after sputtering, it is extremely valuable as a substitute for a conventional sputtering target.

The present application claims priority on the basis of Japanese Patent Application No. 2011-151288, filed on Jan. 7, 2011, the entire disclosure of which is hereby incorporated by reference.

1,3‧‧‧support plate

2,4‧‧‧ targets

21, 41‧‧‧ base

22‧‧‧ convex (or protruding)

31‧‧‧Substrate

32‧‧‧ recess

42‧‧‧ convex (or fitting)

100,200‧‧‧sputter target

100M, 200M, 300M‧‧‧ finite element model

The first (a) and (b) drawings show the structure of the sputtering target 100 according to the first embodiment of the present invention.

The second (a) and (b) drawings show the structure of the sputtering target 200 according to the second embodiment of the present invention.

Fig. 3 is a graph showing the measured results of the amount of target deformation after the use of a conventional sputtering target.

Fig. 4 is a graph showing the measured results of the remaining thickness profile of the target after the use of the conventional sputtering target.

Figure 5 is a finite element model showing a conventional sputtering target.

The sixth (a), (b) and (c) drawings show the results of deformation analysis of the amount of deformation of the target when a conventional sputtering target is given various temperatures and pressures during sputtering.

Fig. 7 is a graph showing the relationship between the pressure and the maximum deformation amount according to the deformation analysis result of Fig. 6 of the conventional target of the sputtering target.

Fig. 8 is a graph showing the consistency of the deformation analysis result (curve G) of the target of the conventional sputtering target with respect to the measured deformation value (curve A).

Figure 9(a)(b) shows the sputtering of the present invention for a non-sputtered shape The target analysis of the target, the deformation analysis result of the target deformation amount when a predetermined external force is applied at the time of sputtering.

The figure 10(a)(b) shows the splash shape of the sputtering target target of the first embodiment of the present invention used for the deformation analysis when the estimated external force is applied.

The eleventh (a) and (b) drawings show the sputtering shape of the sputtering target target according to the second embodiment of the present invention used for the deformation analysis when the estimated external force is applied.

Fig. 12(a) and (b) are diagrams showing the results of deformation analysis of the amount of deformation when a predetermined external force is applied to the target of the sputtering target of the present invention having a sputtered shape (after being sputtered).

1‧‧‧ support plate

2‧‧‧ Target

21‧‧‧ base

21a‧‧‧The opposite side of the surface of the base that is in contact with the support plate

21b‧‧‧The surface of the base that is in contact with the support plate

22‧‧‧ convex (or protruding)

22a‧‧‧Upper bottom

100‧‧‧ Sputtering target

D1‧‧‧ diameter of the support plate

D2‧‧‧ diameter of the base

D3‧‧‧ Diameter of the bottom surface above the convex part

D4‧‧‧ Diameter of the underside of the convex part

Y1‧‧‧ thickness of the support plate

Thickness of the base of Y2‧‧‧

Y3‧‧‧ Thickness of the convex part

L‧‧‧ axis of the base

Claims (12)

A sputtering target comprising a plate-shaped support plate and a sputtering target of a target placed on the support plate; wherein the target has a plate-shaped base portion and a convex portion; the plate-shaped base portion And contacting the support plate; the convex portion is formed at a central portion of a surface on a side opposite to a surface of the base portion that is in contact with the support plate, and is formed coaxially and integrally with the base portion. The sputtering target according to claim 1, wherein the convex portion has a truncated cone shape. A sputtering target comprising a plate-shaped support plate and a sputtering target of a target placed on the support plate; wherein the target has a plate-shaped base portion and a convex portion; the plate-shaped base portion And contacting the support plate; the convex portion is formed at a central portion of a surface of the base portion that is in contact with the support plate, and is coaxial with the base portion; the support plate is in contact with the target material The central portion of the surface has a concave portion that is fitted to the convex portion of the target. The sputtering target according to claim 3, wherein the convex portion has a cylindrical shape. a target for a target placed on a support plate in a sputtering target; characterized in that it has a plate-like base and a convex portion; the plate-shaped base is in contact with the support plate; The convex portion is a phase of the surface of the base portion that is in contact with the support plate The central portion of the opposite side is formed coaxially and integrally with the base portion. The target material according to claim 5, wherein the convex portion has a truncated cone shape. a target for a target placed on a support plate in a sputtering target; characterized in that it has a plate-like base and a convex portion; the plate-shaped base is in contact with the support plate; The convex portion is formed at a central portion of a surface of the base portion that is in contact with the support plate, and is coaxial with the base portion and integrally formed. The target of claim 7, wherein the convex portion has a cylindrical shape. The target according to claim 7 or 8, wherein the convex portion is fitted to a concave portion formed at a central portion of a surface of the support plate that is in contact with the target. A support plate is a support plate for supporting a target in a sputtering target, and has a concave portion at a central portion of a surface in contact with the target. The support plate according to claim 10, wherein the concave portion has a cylindrical shape. The support plate according to claim 10, wherein the concave portion is fitted to a convex portion formed at a central portion of a surface of the target that is in contact with the support plate.