TWI400350B - Target support plate assembly - Google Patents

Description

Target support plate assembly

The present invention provides a target support plate assembly which can extend the life of a target and make the film uniformity (uniformity of film thickness) good during sputtering, and even if there is a change due to the type of the target (erosion) differences can also easily produce high efficiency targets in response to inherent target spatter.

The method of forming a thin film by sputtering can be widely used for manufacturing various electronic and electrical parts.

The sputtering method uses the following principle: a substrate that becomes an anode is opposed to a target that serves as a cathode, and a high voltage is applied between the substrate and the target in an inert gas atmosphere to generate an electric field, at which time the ionized electron collides with the inert gas. The plasma is formed, and the cations in the plasma collide with the surface of the target to break out the target constituent atoms, and the flying atoms adhere to the surface of the substrate to form a film.

Currently, sputtering is mostly used as a so-called magnetron sputtering method. The magnetron sputtering method is a method in which a magnet is disposed on the back side of the target to cause a magnetic field perpendicular to the electric field to be sputtered on the target surface, and has the following characteristics: plasma stabilization can be realized in such an orthogonal electromagnetic field space. And high density, which increases the sputtering speed.

Usually, magnetron sputtering is to capture electrons in a magnetic field and effectively ionize the sputtering gas, but it may be caused by sputtering due to the structure or type of the magnet, the sputtering condition, the material of the target, the type of the sputtering device, and the like. The erosion (splashing) of the target is different, and the erosion is uneven. It is not limited to magnetron sputtering, and is the same in other sputtering methods.

The target is splashed to the deepest extent to reach the end of its life, and a new target needs to be replaced. Usually the target is formed into a flat or cylindrical shape.

Further, if the target is locally splashed deep, the following problem may occur: sputtering may be unevenly formed, and uniformity of film (uniformity of film thickness) may be deteriorated.

Furthermore, regardless of whether the target has a residual thickness, the end of life will be ushered in. It is a case where the uniformity of the film (the uniformity of the film thickness) or the management value of the step loss rate determined in the film forming process is over a certain set allowable value in the middle of the target life. At this time, if the target is continuously used, the allowable value will be exceeded, and even if the target has a thickness remaining, it is necessary to replace the new target. That is, the life of the target is shorter than originally.

Therefore, various attempts have been made in terms of the structure of the splash surface of the target, the structure of the support plate, and further the configuration of the assembly of the target and the support plate. For example, Patent Document 1 listed below proposes a multi-section target of a rectangular parallelepiped, which is a target for forming a slope from a target having a high height toward a surface having a low height when there is a difference in height between the target and the target which are subjected to sputtering. At this time, since the distance between the sputtering surface of the target and the substrate and the distance between the sputtering surface and the magnet disposed on the back surface of the target are not uniform, there is a problem that the sputtering is uneven at the initial stage of sputtering.

Patent Document 2 discloses a method in which a support plate is formed into a convex shape, and a split target is placed on the support plate, and when the bonding is performed, the target of the end portion is formed in order to easily remove the bonding agent between the targets. L-shaped target - support plate assembly. At this time, there is a problem that since the purpose is only to facilitate the removal of the bonding agent, the shape control of the target corresponding to the sputtering cannot be performed, and since the support plate has a convex shape of a fixed shape, it is not versatile.

Patent Document 3 listed below proposes a study on a sputtering type sputtering target and a supporting plate for holding the same. At this time, in order to prevent the deviation of the direction of gravity, the support plate is formed into a tooth shape of the raft, and the shape of the target is set on the convex shape. This has not been particularly studied to improve the efficiency of use of the target (utilization efficiency), and it is impossible to control the shape of the target in response to sputtering. Moreover, the support board also has a problem of having a specific shape and not being versatile.

Patent Document 4 listed below studies the improvement of the use efficiency of the target. At this time, the cross section of the splash surface of the target is formed into an inverted M shape. At this time, since the initial splash surface is not parallel to the substrate and the magnet disposed on the back side of the target, there is a problem that the particles flying during the sputtering become irregular (irregular) from the initial stage to the middle stage.

In the following Patent Document 5, it is proposed that the bottom surface of the target is curved, and a shape is formed on the upper surface of the support plate so as to overlap the bottom surface of the target. At this time, although the use efficiency of the target is considered, since both the target and the support plate have a specific shape, there is a problem that the production is complicated and the cost is increased, and since the support plate has a specific shape, there is a problem that it is not versatile.

Patent Document 6 listed below proposes that the disk-shaped target is also a disk-shaped target, and the support plate is also a disk-shaped shape, and in order to visually recognize the positioning, irregularities along the circumference of the disk are formed. Since both the target and the support plate have a specific shape, there is a problem that the production is complicated and the cost is increased, and since the support plate has a specific shape, there is a problem that it is not versatile.

In the following Patent Document 7, as shown in Fig. 3 (a) or (c), it is also effective to "increasing the target thickness on the surface to be sputtered". However, it is pointed out that such a shape (the initial splash surface is not parallel to the substrate and the magnet disposed on the back side of the target) has a problem that the flying particles become irregular (irregular) during sputtering. That is, even if the use efficiency is high, it is expected that there is a problem that the change in the film formation speed in the target use is large, and the number of occurrences of arcing is large, and the step loss rate is high.

Further, Patent Document 7 has the following embodiment: In any of Figs. 3(a), (b), and (c), the target 1 is not joined to the water-cooled plate 2, but is held by a holder. The target 1 is fixed to the water-cooled plate 2 for use. In the case of this method, there is a problem in that, in a ceramic material having an ITO-like thermal conductivity, when the adhesion between the water-cooled plate (support plate) and the holder is incomplete, cooling in the sputtering is insufficient, and generation occurs. The probability of a problem with target rupture is increased.

According to the above, there have been the following problems in the previous sputtering target: no attempt has been made in the following viewpoints: the target is used with high efficiency, can be uniformly sputtered from the initial sputtering, and is easily formed in a simple form. Make targets and support boards. Further, there is a disadvantage that a problem such as an arc is generated.

Patent Document 1: Japanese Patent No. 3760652

Patent Document 2: Japanese Laid-Open Patent Publication No. 2009-57598

Patent Document 3: Japanese Laid-Open Patent Publication No. 2005-200682

Patent Document 4: Japanese Laid-Open Patent Publication No. 2007-224392

Patent Document 5: Japanese Patent Publication No. 2007-505217

Patent Document 6: Japanese Laid-Open Patent Publication No. 2009-144186

Patent Document 7: Japanese Laid-Open Patent Publication No. 59-232271

The present invention has been made in view of the problems or disadvantages described above, and provides a uniformity of film uniformity (uniformity of film thickness) in the initial stage of crossing the target and during sputtering, and generation of particles, and further targets A target with a long life, a method for producing the target, and a target-support plate.

In order to solve the above problems, the inventors of the present invention have focused on the shape of a target for sputtering and a support plate supporting the same, and have obtained the knowledge that a target shape in which sputtering is conceived is prepared, and sputtering is performed using the target. The uniformity of the film (uniformity of film thickness) during sputtering is good, and the generation of particles is small, thereby prolonging the life of the target. Further, the "high use efficiency target" used in the present specification means a target having a shape expected to be sputtered as described above.

The present invention is provided based on the above knowledge:

1) a target support plate assembly which is a target support plate assembly for magnetron sputtering, wherein a target sputtering surface is fixed to a magnet disposed on a back surface of the target and a substrate surface facing the target, respectively. The target has a concavo-convex shape in which the thickness is changed on the side of the support plate surface so that the portion to be sputtered by sputtering is thick, and the thin portion of the target between the support plate and the target having the concavo-convex shape is provided with a conductive material. a spacer formed;

The invention further provides:

2) The target support plate assembly according to the above 1), wherein the bottom portions on both sides in the longitudinal direction of the target are at a distance of 0.5 mm or more from the sputter surface of the target which is finally splashed, to both sides of the length direction of the target a side portion and a bottom portion of the target are provided with a dimple portion between the bottom surface of the target and the support surface;

3) The target support plate assembly according to the above 1) or 2), wherein the target is a split target of 2 or more;

The target support plate assembly according to any one of the above 1 to 3, wherein the target, the support plate, and the spacer are joined by solder.

The invention further provides:

The target support plate assembly according to any one of the above 1 to 4, wherein the sputtering target is indium, tin, aluminum, copper, ruthenium, titanium, nickel, cobalt, ruthenium, tungsten, rhenium, or the like. Alloy or oxide;

The target support plate assembly according to any one of the above 1 to 5, wherein the spacer is copper, aluminum, titanium, molybdenum or an alloy containing the same as the main component;

The target support plate assembly according to any one of the above 1 to 6, wherein the thickness of the target at the thickest portion and the total thickness of the target and the spacer at the thin portion are fixed;

The invention further provides:

The target support plate assembly according to any one of the above 1 to 7, wherein the target is asymmetrical with respect to a center line of the longitudinal direction of the target;

9) The target support plate assembly according to any one of the above 1) to 8), which is a flat plate having a fixed thickness of the support plate;

The target support plate assembly according to any one of the above 1 to 8, wherein only the thickness of both ends of the support plate in the longitudinal direction is thinner than the other thicknesses, and has a step at the boundary of the thickness.

The target support plate assembly of the present invention has the following excellent effects: it can prolong the life of the target, and can achieve uniformity of film uniformity (uniformity of film thickness) in the initial stage of sputtering and during sputtering, and particles Less happens.

Further, there is an effect that even if there is a difference in sputtering due to a change in the type of the target material, it is possible to easily manufacture a high-efficiency target in accordance with the inherent target sputtering.

The present invention is a target support plate assembly for magnetron sputtering, and various targets such as a rectangular shape, a circular shape, and an elliptical shape can be applied to the target, and the shape is not particularly limited. In the magnetron sputtering, in order to improve the sputtering efficiency, a magnet disposed on the back surface of the target is disposed, and a portion that is strongly splashed and a portion that is not subjected to sputtering are generated depending on the arrangement of the magnet or the strength of the magnetic field line.

Although it depends on the sputtering apparatus, the target supporting plate assembly must have a configuration which can be stably sputtered and which can more uniformly obtain the uniformity of the film.

However, as a basic structure, it is necessary to fix the distance between the sputtering surface of the target and the magnet disposed on the back surface of the target and the distance between the sputtering surface of the target and the substrate surface facing the target.

On the other hand, as described above, although a portion which is strongly splashed and a portion which is not subjected to sputtering is generated, the portion which is strongly splashed determines the life of the target.

However, in this case, it is also required to continuously improve the efficiency of use of the entire target. It is also recommended to increase the target's strongly eroded areas in previous sputtering targets. However, in this case, since the distance between the target and the substrate is not fixed, there is a problem that the uniformity of the film is unstable particularly at the initial stage of sputtering.

Therefore, in the invention of the present invention, the target has a concavo-convex shape in which the thickness is changed on the support plate surface side so that the portion to be sputtered by sputtering is thick. At this time, it is important to introduce a spacer made of a conductive material between the support plate and the target thin-walled portion between the target having the uneven shape. If the material of the spacer is the same as that of the support plate, there is no particular problem in adhesion, and the cooling efficiency is also equal, so it can be said to be a preferable material.

Previously, in the case where irregularities were present under the target, the surface on the upper side of the support plate was formed to have irregularities (back unevenness) corresponding thereto. However, in this case, there is a problem that the production of the support board becomes very complicated. However, in the invention of the present invention, since only the spacer is introduced, there is a large effect that the complexity of the support plate can be completely eliminated.

At first glance it appears to be a deformation of the support plate, but there has been no prior art support plate assembly of this configuration. The reason for this is that it is recognized that the target and the support plate must be integrated. However, the present invention solves the above problems by introducing a spacer based on a large number of experiments. Further, the target of the present invention has a concave-convex shape in which the thickness is changed on the support plate surface side so that the portion to be sputtered by sputtering is thickened, and since the sputtering surface at the initial stage of the sputtering is in a planar shape, it is possible to obtain a self-splashing surface. In the early to mid-plating period, the uniformity of the film is more uniform.

Further, from the middle to the end, as a result of the formation of irregularities on the sputtered surface, the deterioration of the uniformity of the film was also slow. As described above, the target of the present invention is particularly excellent in uniformity of the film from the initial stage to the end of the sputtering, as compared with the case where the surface of the target is formed with irregularities.

Further, in the present invention, it is preferable that the target support plate assembly has a bottom portion on both sides in the longitudinal direction of the target, and is at a position of 0.5 mm or more from the splash surface of the target which is finally splashed, to the length of the target. The both side edges and the target bottom form a dimple between the joint surface of the support surface and the lower surface of the target.

In the production of the target support plate assembly, the operation of placing and soldering the target on the support plate is extremely easy. As a result, the target support plate assembly adopts this configuration, whereby sputtering film formation does not become an obstacle.

The target support plate assembly can also have a target of two or more divided targets, whereby a long target support plate assembly can be produced. Further, there is an advantage that the target, the support plate, and the spacer are easily joined by solder, and the present invention provides the target support plate assembly. The solder is not particularly limited, and a low melting point solder material such as indium can be used.

In the target support plate assembly of the present invention, the sputtering target may be suitably selected from indium, tin, aluminum, copper, tantalum, titanium, nickel, cobalt, ruthenium, tungsten, rhenium, or alloys or oxides thereof. In particular, it is suitable for the production of targets for display materials such as ITO (indium and tin oxide). Further, the spacer is applicable to a conductive material, and particularly preferably copper, aluminum, titanium, molybdenum or the like.

Further, the spacer may be made of a material which is the same as the support plate as described above. Further, in order to increase the adhesion between the spacer and the target or the support plate or the cooling efficiency, substrate treatment such as plating or ion plating may be performed. The invention of the present invention includes such. The spacer also has the function of preventing the target from tilting on the support plate.

The target support plate assembly allows the target thickness of the thickest portion to be the same as the total thickness of the target and the spacer at the thinner portion.

The reason for this is that a plurality of thinner spacers having different sizes can be prepared and adjusted arbitrarily. Further, the present invention can easily produce a target support plate assembly in which the target is asymmetric with respect to the center line in the longitudinal direction of the target. The reason for this is also the same, since a plurality of spacers having different sizes can be prepared, thereby making arbitrary adjustments. It is a major feature of the invention of the present invention.

Thereby, the greater advantage is that it can be applied to a flat plate having a fixed thickness of the support plate without attempting to change the shape of the support plate. Further, it is of course possible to use a simple support plate in which only the thickness of both end portions in the longitudinal direction of the support plate is thinner than other thicknesses and has a step at the boundary of the thickness. The invention of the present invention includes such.

In the manufacture of the Erosion profiled target of the present invention, a flat-shaped target can be sputtered in advance, and the shape and depth of the splash at this time can be investigated, thereby adjusting the thickness of the target.

Thereby, even if there is a splash difference due to a change in the type of the target material, it is possible to easily manufacture a high use efficiency target in accordance with the inherent target sputtering.

The target support plate assembly of the present invention has an advantage that it is extremely easy to manufacture and can extend the life of the target. Further, there is an effect that the uniformity of the film (the uniformity of the film thickness) is good during the initial stage of sputtering and during the sputtering process, and the particle generation is less. Further, there is a large effect that even if there is a difference in sputtering due to a change in the type of the target material, it is possible to easily manufacture a high-efficiency target in accordance with the inherent target sputtering.

Example

Next, the present invention will be described based on examples. Furthermore, the following embodiments are intended to facilitate the understanding of the invention, and the invention is not limited to the embodiments. That is, other examples or modifications based on the technical idea of the present invention are of course included in the present invention.

(Example 1)

The copper support plate and the target shown in Fig. 1 were used, and the target system used ITO (Indium Tin Oxide). 1 is a plan view (part), a C-C cross-sectional view, an A-A cross-sectional view, and a B-B cross-sectional view of a target support plate assembly. As shown in Fig. 1, the support plate of the target support plate assembly of the first embodiment has a rectangular shape (rectangular shape) on the plane, and both end portions in the longitudinal direction of the target have an elliptical shape. At this time, the split target is used. The bottom portions of the both sides in the longitudinal direction of the divided target are asymmetrical left and right in the longitudinal direction.

The support plate is a support plate having a thickness of 5.0 mm on both sides in the longitudinal direction, that is, a support plate having a step difference of 5.0 mm. A spacer having a thickness of 4.5 mm and a thickness of 5.0 mm made of copper is placed on the thin portion of the support portion, and the target, the spacer, and the support plate are respectively joined by indium solder. When the thickness of the target is different, corresponding to the thickness (thinness), a spacer of a suitable thickness is inserted between the target and the support plate.

Magnetron sputtering was performed using the ITO (indium tin oxide) target. The sputtering conditions are sputtered at a sputtering power of 10 kW to 1600 kWh. The target 1 tablet had a weight of 18.8 kg before use and a weight of 11.2 kg after use. As a result, the use efficiency was 40%, which was higher than the comparative example shown below. The results are shown in Table 1. The use efficiency does not vary greatly depending on the type of target material, so the following ITO target was used for the test.

In order to observe the sputtering characteristics, the change in the film formation speed was investigated. The results are shown in Table 2. If the information in Table 2 is shown in the figure, it is as shown in Fig. 2. It is expressed as a relative ratio when the start of use is set to 100, and is maintained at 95 even when the cumulative power amount is 1600 kWHr.

Moreover, the sputtering characteristics are the number of times the arc is generated. The results are shown in Table 3. If the information of Table 3 is shown in the figure, it is as shown in FIG. At the beginning of use, it was 0, and it gradually increased with continuous sputtering. However, the following results were obtained: about 87 times when the cumulative power amount was 1600 kWHr, and the number of arc generations was low.

Furthermore, the loss rate of the investigation step is investigated. The loss rate in this step is a defect rate of the LCD panel due to, for example, ITO particles having a size of 20 μm or more which is generated in ITO sputtering. The results are shown in Table 4. Further, if the information of Table 4 is shown in the figure, it is as shown in FIG. According to the results, the following results were clearly obtained: the cumulative power amount was also about 0.28 at 1600 kWHr, and the step loss rate was low.

According to the above results, the results are excellent in any case as compared with the comparative examples described later.

(Comparative Example 1)

Using the copper support plate and the target shown in Fig. 5, as in the first embodiment, ITO (indium tin oxide) was used as the target. Fig. 5 is a plan view (part), a C-C sectional view, an A-A sectional view, and a B-B sectional view showing the target supporting plate assembly. As shown in FIG. 5, the support plate of the target support plate assembly of Comparative Example 1 has a rectangular shape (rectangular shape) on the plane, and both end portions in the longitudinal direction of the target have an elliptical shape. At this time, the split target is used. The support plate is a support plate having a thickness of 5.0 mm on both sides in the longitudinal direction, that is, a support plate having a step difference of 5.0 mm.

Corresponding to the step, that is, a target having a thickness of 5 mm is used on the thin side of the support plate, the target thickness at both ends is 11.5 mm, and the thickness of the target existing at the center is 6.5 mm, in such a manner that the targets are in the same plane. Configure the split target. And, these are directly bonded to the support plate by indium solder. A target of 6.5 mm thick is formed outside the segmented target at both ends.

The ITO (Indium Tin Oxide) target support plate assembly was used for magnetron sputtering. The sputtering conditions are sputtered at a sputtering power of 10 kW to 1600 kWh.

The target 1 tablet had a weight of 25.2 kg before use and a weight of 17.7 kg after use. As a result, the use efficiency was 30%, and the efficiency was lower than that of the above Example 1. The results are also shown in Table 1.

In order to observe the sputtering characteristics, the change in the film formation speed was examined in the same manner as in Example 1. The results are shown in Table 2 and Figure 2. The relative ratio when the start of use was set to 100 was 93, which was 93 at the cumulative power amount of 1600 kWHr, which was slightly lower than that of the first embodiment. Moreover, the sputtering characteristics are the number of times the arc is generated. The results are shown in Table 3 and Figure 3. At the beginning of use, it was 0, and it gradually increased with the continuous sputtering. The cumulative power amount was 90 times at 1600 kWHr, and the number of arc generations was slightly increased as compared with Example 1.

Furthermore, the loss rate of the investigation step is investigated. The results are shown in Table 4 and Figure 4. As a result, the cumulative power amount was 0.37 at 1600 kWHr, and the step loss rate was slightly higher. From the above results, it was apparent that the following results were obtained: compared with Example 1, it was inferior in either case.

(Comparative Example 2)

Using the copper support plate and the target shown in Fig. 6, as in the first embodiment, ITO (indium tin oxide) was used as the target. 6 is a plan view (part), a C-C cross-sectional view, an A-A cross-sectional view, and a B-B cross-sectional view of the target support plate assembly. As shown in FIG. 6, the support plate of the target support plate assembly of Comparative Example 2 has a rectangular shape (rectangular shape) on the plane, and both end portions in the longitudinal direction of the target have an elliptical shape. The split target is used at this time. The support plate is a support plate having a thickness of 5.0 mm on both sides in the longitudinal direction, that is, a support plate having a step of 5 mm.

Corresponding to the step, that is, a target having a thickness of 5 mm is used on the thin side of the support plate. For the targets on both sides, there is a height difference from other adjacent targets, which is 11.5 mm at the highest part, and is equipped with a split target that is inclined to the same height as the adjacent 5.5 mm target, which is supported by indium solder. The plates are joined directly.

Magnetron sputtering was performed using an ITO (Indium Tin Oxide) target support plate assembly. The sputtering conditions are sputtered at a sputtering power of 10 kW to 1600 kWh.

The target 1 piece had a weight of 23.0 kg before use and a weight of 15.6 kg after use. As a result, the use efficiency was 32%, and the efficiency was lower than that of the above Example 1. The results are also shown in Table 1.

In order to observe the sputtering characteristics, the change in the film formation speed was examined in the same manner as in Example 1. The results are shown in Table 2 and Figure 2. The relative ratio when the start of use was set to 100 was 85, which was 85 at the cumulative power amount of 1600 kWHr, which was significantly lower than that of Example 1.

Moreover, the sputtering characteristics are the number of times the arc is generated. The results are shown in Table 3 and Figure 3. When the start is 0, the tendency to gradually increase with continuous sputtering is 143 times at a cumulative power of 1600 kWHr, and the number of arc generations is significantly increased as compared with Example 1.

Furthermore, the loss rate of the investigation step is investigated. The results are shown in Table 4 and Figure 4. As a result, the cumulative power amount was 0.63 at 1600 kWHr, and the step loss rate was remarkably increased.

From the above results, it was apparent that the following results were obtained: compared with Example 1, it was significantly inferior in either case.

(Comparative Example 3)

Using the copper support plate and the target shown in Fig. 7, as in the first embodiment, ITO (indium tin oxide) was used as the target. Fig. 7 is a plan view (part), a C-C sectional view, an A-A sectional view, and a B-B sectional view of the target supporting plate assembly. As shown in Fig. 7, the support plate of the target support plate assembly of Comparative Example 3 has a rectangular shape (rectangular shape) on the plane, and both end portions in the longitudinal direction of the target have an elliptical shape. At this time, the split target is used. The support plate is a support plate having a thickness of 5.0 mm on both sides in the longitudinal direction, that is, a support plate having a step difference of 5.0 mm.

Corresponding to this step, a target of 5.0 mm thick is used on the thinner side of the support plate. For the targets on both sides, there is a height difference from other adjacent targets, which is 11.5 mm at the highest part, and is equipped with a split target that is inclined to the same height as the adjacent 5.5 mm target, which is supported by indium solder. The plates are joined directly.

At this time, the target of both sides exceeds the step, and as shown in FIG. 7, it extends to the target of the center. That is, it has a horizontal portion having the same thickness as the thickness of the central portion having a small thickness.

The ITO (Indium Tin Oxide) target support plate assembly was used for magnetron sputtering. The sputtering conditions are sputtered at a sputtering power of 10 kW to 1600 kWh.

The target 1 piece had a weight of 23.0 kg before use and a weight of 15.5 kg after use. As a result, the use efficiency was 33%, and the efficiency was lower than that of the above Example 1. Similarly, the results are shown in Table 1.

In order to observe the sputtering characteristics, the change in the film formation speed was examined in the same manner as in Example 1. The results are shown in Table 2 and Figure 2. The relative ratio when the start of use was set to 100 was 86, which was 86 at the cumulative power amount of 1600 kWHr, which was significantly lower than that of Example 1.

Moreover, the sputtering characteristics are the number of times the arc is generated. The results are shown in Table 3 and Figure 3. When the start is 0, the tendency to gradually increase with continuous sputtering is 139 times at a cumulative power of 1600 kWHr, and the number of arc generations is significantly increased as compared with Example 1.

Then, investigate the loss rate of the steps. The results are shown in Table 4 and Figure 4. As a result, the cumulative power amount was 0.59 at 1600 kWHr, and the step loss rate was remarkably increased.

From the above results, it was apparent that the following results were obtained: compared with Example 1, it was significantly inferior in either case.

(Example 2)

The copper support plate and the target shown in Fig. 8 were used, and the target system used ITO (Indium Tin Oxide). 8 is a plan view (part), a C-C cross-sectional view, an A-A cross-sectional view, and a B-B cross-sectional view of the target support plate assembly. As shown in FIG. 8, the support plate of the target support plate assembly of the second embodiment has a rectangular shape (rectangular shape) on the plane, and both end portions in the longitudinal direction of the target have an elliptical shape. At this time, the split target is used. In the same manner as in the first embodiment, the bottom portions of the both sides in the longitudinal direction of the divided target are asymmetrical in the longitudinal direction (concave-convex shape). The support board uses a flat support board.

Further, the target on both sides in the longitudinal direction is used for a target having a pit portion of 4.5 mm and 5.0 mm on the support plate side. Further, spacers having a thickness of 4.5 mm and a thickness of 5.0 mm were placed in the dimple portions of the target, and the target, the spacer, and the support plate were bonded by indium solder, respectively. When the thickness of the target is different, corresponding to the thickness (thinness), a spacer of a suitable thickness is inserted between the target and the support plate.

Magnetron sputtering was performed using the ITO (indium tin oxide) target. The sputtering conditions are sputtered at a sputtering power of 10 kW to 1600 kWh. The target 1 tablet had a weight of 18.8 kg before use and a weight of 11.3 kg after use. As a result, the use efficiency was 40%, and the efficiency was higher than that of the comparative example. The results are shown in Table 1.

In order to observe the sputtering characteristics, the change in film formation speed was also investigated. The results are shown in Table 2 and Figure 2. The relative ratio when the start of use is set to 100 is also maintained at 94 for the cumulative power amount of 1600 kWHr.

Moreover, the sputtering characteristics are the number of times the arc is generated. The results are shown in Table 3 and Figure 3. At the beginning of use, it is 0, and it tends to increase gradually as it continues to be sputtered, and it can be obtained in the case where the cumulative power amount is 1600 kWHr, which is also 89 times, and the number of arc generations is low.

Furthermore, the loss rate of the investigation step is investigated. The results are shown in Table 4 and Figure 4. According to the results, the following results were clearly obtained: the cumulative power amount was also about 0.30 at 1600 kWHr, and the step loss rate was low. According to the above results, the results were excellent in any case as compared with the comparative examples. In particular, in the initial stage of the target, there is a high difference between the erosion surface, and the tendency of the defect rate is high.

(Comparative Example 4)

Using the copper support plate and the target shown in Fig. 9, in the same manner as in the second embodiment, ITO (indium tin oxide) was used as the target. Fig. 9 is a plan view (part), a C-C sectional view, an A-A sectional view, and a B-B sectional view showing the target supporting plate assembly. As shown in FIG. 9, the support plate of the target support plate assembly of Comparative Example 4 has a rectangular shape (rectangular shape) on the plane, and both end portions in the longitudinal direction of the target have an elliptical shape. At this time, the split target is used. The support board uses a flat support board.

Also, the targets were all used with a target of 11.5 mm thick. Further, the target and the support plate are bonded by indium solder, respectively.

The ITO (Indium Tin Oxide) target support plate assembly was used for magnetron sputtering. The sputtering conditions are sputtered at a sputtering power of 10 kW to 1600 kWh.

The target 1 piece had a weight of 37.3 kg before use and a weight of 29.8 kg after use. As a result, the use efficiency was 20%, and the efficiency was lower than that of the above Example 2. The results are also shown in Table 1.

In order to observe the sputtering characteristics, the change in the film formation speed was examined in the same manner as in Example 2. The results are shown in Table 2 and Figure 2. The relative ratio when the start of use was set to 100 was 93, which was 93 at the cumulative power amount of 1600 kWHr, which was slightly lower than that of the second embodiment.

Moreover, the sputtering characteristics are the number of times the arc is generated. The results are shown in Table 3 and Figure 3. At the beginning of use, it was 0, and it gradually increased with the continuous sputtering. The cumulative power amount was 93 times at 1600 kWHr, and the number of arc generations was slightly increased as compared with Example 2.

Furthermore, the loss rate of the investigation step is investigated. The results are shown in Table 4 and Figure 4. As a result, the cumulative power amount was 0.35 at 1600 kWHr, and the step loss rate was increased.

From the above results, it was apparent that the following results were obtained: compared with Example 2, it was slightly inferior in either case.

(Comparative Example 5)

Using the copper support plate and the target shown in Fig. 10, in the same manner as in the second embodiment, ITO (indium tin oxide) was used as the target. Fig. 10 is a plan view (part), a C-C sectional view, an A-A sectional view, and a B-B sectional view showing the target supporting plate assembly. As shown in FIG. 10, the support plate of the target support plate assembly of Comparative Example 5 has a rectangular shape (rectangular shape) on the plane, and both end portions in the longitudinal direction of the target have an elliptical shape. At this time, the split target is used. The support board uses a flat support board.

Further, for the targets on both sides, there is a height difference from the other adjacent targets in the central portion, which is 11.5 mm at the highest portion, and is disposed with a split target that is inclined to the same height as the 10.5 mm target, which is to be soldered by indium solder. Wait directly to the support board.

The ITO (Indium Tin Oxide) target support plate assembly was used for magnetron sputtering. The sputtering conditions are sputtered at a sputtering power of 10 kW to 1600 kWh.

The target 1 piece had a weight of 34.5 kg before use and a weight of 27.0 kg after use. As a result, the use efficiency was 22%, and the efficiency was lower than that of the above Example 2. The results are also shown in Table 1.

In order to observe the sputtering characteristics, the change in the film formation speed was examined in the same manner as in Example 2. The results are shown in Table 2 and Figure 2. The relative ratio when the start of use was set to 100 was 83, which was 83 at the cumulative power amount of 1600 kWHr, which was significantly lower than that of Example 2.

Moreover, the sputtering characteristics are the number of times the arc is generated. The results are shown in Table 3 and Figure 3. At the beginning of use, it was 0, and the tendency to gradually increase with continuous sputtering was 155 times at a cumulative power amount of 1600 kWHr, and the number of arc generations was significantly increased as compared with Example 2.

Furthermore, the loss rate of the investigation step is investigated. The results are shown in Table 4 and Figure 4. As a result, the cumulative power amount was 0.69 at 1600 kWHr, and the step loss rate was remarkably increased.

According to the above results, the following results were clearly obtained: compared with Example 2, it was significantly inferior in either case.

(Comparative Example 6)

Using the copper support plate and the target shown in Fig. 11, in the same manner as in the second embodiment, ITO (indium tin oxide) was used as the target. Fig. 11 is a plan view (part), a C-C sectional view, an A-A sectional view, and a B-B sectional view showing the target supporting plate assembly. As shown in FIG. 11, the support plate of the target support plate assembly of Comparative Example 6 has a rectangular shape (rectangular shape) on the plane, and both end portions in the longitudinal direction of the target have an elliptical shape. At this time, the split target is used. The support board uses a flat support board.

For the targets on both sides, there is a height difference from other adjacent targets, which is 11.5 mm at the highest part, and is provided with a split target having the same height as the 10.5 mm thick target adjacent to the central portion, by indium soldering These are joined directly to the support plate.

At this time, the target of both sides exceeds the step, and as shown in FIG. 11, it extends to the target of the center. That is, it has a horizontal portion having the same thickness as the thickness of the central portion having a small thickness.

The ITO (Indium Tin Oxide) target support plate assembly was used for magnetron sputtering. The sputtering conditions are sputtered at a sputtering power of 10 kW to 1600 kWh.

The target 1 piece had a weight of 34.5 kg before use and a weight of 26.9 kg after use. As a result, the use efficiency was 22%, and the efficiency was lower than that of the above Example 2. The results are also shown in Table 1.

In order to observe the sputtering characteristics, the change in the film formation speed was examined in the same manner as in Example 2. The results are shown in Table 2 and Figure 2. The relative ratio when the start of use was set to 100 was 84, which was 84 at the cumulative power amount of 1600 kWHr, which was significantly lower than that of Example 2.

Moreover, the sputtering characteristics are the number of times the arc is generated. The results are shown in Table 3 and Figure 3. At the beginning of use, it was 0, and it gradually increased with the continuous sputtering. The cumulative power amount was 148 times at 1600 kWHr, and the number of arc generations was significantly increased as compared with Example 2.

Furthermore, the loss rate of the investigation step is investigated. The results are shown in Table 4 and Figure 4. As a result, the cumulative power amount was 0.66 at 1600 kWHr, and the step loss rate was remarkably increased.

According to the above results, the following results were clearly obtained: compared with Example 2, it was significantly inferior in either case. In particular, in the initial stage of the target, there is a high difference between the erosion surface, and the tendency of the defect rate is high.

[Industrial availability]

The target support plate assembly of the present invention has the following effects: the life of the target can be prolonged, and the uniformity of the film (the uniformity of the film thickness) can be made good during the sputtering process, and even if there is a change depending on the kind of the target material The difference in sputtering can also easily produce a target corresponding to the inherent target sputtering, and thus can be effectively used as a target support plate assembly which can be used for various materials.

1. . . target

2. . . Support plate with step difference near both ends in the longitudinal direction

3. . . Segmentation of the target

4. . . Step difference

5. . . An inclined surface formed on the splash surface of the target

6. . . Flat support plate

Fig. 1 is a plan view (partial), a C-C sectional view, an A-A sectional view, and a B-B sectional view of the target supporting plate assembly of the first embodiment.

Fig. 2 is a graph showing the results of fluctuations in film formation speeds of Examples and Comparative Examples.

Fig. 3 is a graph showing the results of the number of arc generation times in the examples and comparative examples.

Fig. 4 is a graph showing the results of the step loss rate of the examples and the comparative examples.

5 is a plan view (part), a C-C cross-sectional view, an A-A cross-sectional view, and a B-B cross-sectional view of the target support plate assembly of Comparative Example 1. FIG.

6 is a plan view (part), a C-C cross-sectional view, an A-A cross-sectional view, and a B-B cross-sectional view of the target support plate assembly of Comparative Example 2. FIG.

Fig. 7 is a plan view (partial), a C-C sectional view, an A-A sectional view, and a B-B sectional view of the target supporting plate assembly of Comparative Example 3.

Fig. 8 is a plan view (part), a C-C sectional view, an A-A sectional view, and a B-B sectional view of the target supporting plate assembly of the second embodiment.

Fig. 9 is a plan view (part), a C-C sectional view, an A-A sectional view, and a B-B sectional view of the target supporting plate assembly of Comparative Example 4.

Fig. 10 is a plan view (part), a C-C sectional view, an A-A sectional view, and a B-B sectional view of the target supporting plate assembly of Comparative Example 5.

Figure 11 is a plan view (partial), a C-C cross-sectional view, an A-A cross-sectional view, and a B-B cross-sectional view of the target support plate assembly of Comparative Example 6.

1. . . target

2. . . Support plate with step difference near both ends in the longitudinal direction

3. . . Segmentation of the target

4. . . Step difference

Claims (22)

A target support plate assembly, which is a target support plate assembly for magnetron sputtering, characterized in that the distance between the splash surface of the target and the magnet disposed on the back surface of the target and the splash surface of the target and the target are opposite The distance between the substrate faces is fixed, and the target is thickened by sputtering, and the unevenness of the thickness is changed on the support plate surface side, and the target is thinned between the support plate and the target having the uneven shape. The wall portion is provided with a spacer made of a conductive material. The target support plate assembly according to claim 1, wherein the bottom of the two sides of the target in the longitudinal direction is at a position 0.5 mm or more from the target sputtered surface of the final splash, and two to the length of the target. The side portion and the bottom of the target are provided with a dimple portion between the lower surface of the target and the bonding surface of the support plate. The target support plate assembly according to claim 1, wherein the target is a split target of 2 or more. The target support plate assembly of claim 2, wherein the target is a split target of 2 or more. The target support plate assembly according to any one of claims 1 to 4, wherein the target, the support plate, and the spacer are joined by solder. The target support plate assembly according to any one of claims 1 to 4, wherein the target is indium, tin, aluminum, copper, ruthenium, titanium, nickel, cobalt, ruthenium, tungsten, rhenium, or the like. Alloy or oxide. The target support plate assembly of claim 5, wherein the target is indium, tin, aluminum, copper, ruthenium, titanium, nickel, cobalt, ruthenium, tungsten, rhenium, or the like An alloy or oxide. The target support plate assembly according to claim 1 or 2, wherein the spacer is copper, aluminum, titanium, molybdenum or an alloy containing the same as the main component. The target support plate assembly of claim 6, wherein the spacer is copper, aluminum, titanium, molybdenum or an alloy containing the same as the main component. The target support plate assembly of claim 7, wherein the spacer is copper, aluminum, titanium, molybdenum or an alloy containing the same as the main component. The target support plate assembly according to claim 1 or 2, wherein the target thickness of the thickest portion and the total thickness of the target and the spacer of the thin portion are fixed. The target support plate assembly of claim 6, wherein the target thickness of the thickest portion and the total thickness of the target and the spacer of the thin portion are fixed. The target support plate assembly according to claim 7, wherein the target thickness of the thickest portion and the total thickness of the target and the spacer of the thin portion are fixed. The target support plate assembly of claim 1 or 2, wherein the target is asymmetrical with respect to a center line of the length of the target. The target support plate assembly of claim 6, wherein the target is asymmetrical with respect to a center line of the length of the target. The target support plate assembly of claim 7, wherein the target is asymmetrical with respect to a center line of the length of the target. A target support plate assembly according to claim 1 or 2, which is a flat plate having a fixed thickness of the support plate. The target support plate assembly of claim 6 is a flat plate having a fixed thickness of the support plate. The target support plate assembly of claim 7 is a flat plate having a fixed thickness of the support plate. The target support plate assembly according to claim 1 or 2, wherein only the thickness of both end portions of the support plate in the longitudinal direction is thinner than the other thicknesses, and the boundary of the thickness has a step. The target support plate assembly according to claim 6, wherein only the thickness of both end portions of the support plate in the longitudinal direction is thinner than the other thicknesses, and the boundary of the thickness has a step. The target support plate assembly according to claim 7, wherein only the thickness of both end portions of the support plate in the longitudinal direction is thinner than the other thicknesses, and the boundary of the thickness has a step.