CN102656289A - Target and backing plate assembly - Google Patents
Target and backing plate assembly Download PDFInfo
- Publication number
- CN102656289A CN102656289A CN2010800322310A CN201080032231A CN102656289A CN 102656289 A CN102656289 A CN 102656289A CN 2010800322310 A CN2010800322310 A CN 2010800322310A CN 201080032231 A CN201080032231 A CN 201080032231A CN 102656289 A CN102656289 A CN 102656289A
- Authority
- CN
- China
- Prior art keywords
- target
- backing plate
- plate assembly
- thickness
- sputter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
- H01J37/3482—Detecting or avoiding eroding through
Abstract
A target and backing plate assembly for magnetron sputtering includes a target, the distance between the erosion surface of the target and a magnet disposed at the rear surface of the target and that between the erosion surface and a surface of a substrate facing the target being fixed. The target has an uneven shape of which thickness is changed at a surface adjacent to a backing plate such that portions to be eroded by sputtering are thick. Conductive spacers are disposed between the backing plate and the target having the uneven shape at thin portions of the target. With this structure, a target of which lifetime and use efficiency are increased while film uniformity (uniformity of film thickness) is kept excellent throughout the sputtering life of the target can be provided. In addition, a method of manufacturing the target and a target backing plate can be provided.
Description
Technical field
The present invention provides a kind of target-backing plate assembly, and said target-backing plate assembly can prolong the life-span of target and can in whole sputter procedure, make the homogeneity (homogeneity of thickness) of film even erosive difference good and that exist the kind because of target material to change also can easily produce and the inherent target corrodes corresponding high service efficiency target.
Background technology
Through the film forming method of sputter, be widely used in the manufacturing of various electronics, electric component etc.
The principle that sputtering method uses is following: make substrate as positive electrode with relative as the target of negative potential; Under inert gas atmosphere; Between this substrate and target, apply high-voltage to produce electric field, at this moment, ionized electronics and rare gas element clash into and the formation plasma body; The atom that will constitute target during positively charged ion in this plasma body bump target surperficial hits, and this atom that flies out is attached to relative substrate surface formation film.
At present, the sputter methods that are called so-called magnetron sputtering of using more.Magnetron sputtering method is that the dorsal part at target is provided with magnet; Edge and the vertical direction of electric field produce magnetic field on the target surface and the method for carrying out sputter; It has feature: in such crossed electric and magnetic field space, can realize the stabilization and the densification of plasma body, and can improve sputtering rate.
Generally speaking; In the magnetron sputtering; Thereby electronics is captured in the magnetic field sputter gas ionization effectively, still, according to the structure of magnet or kind and sputtering condition, the material of target, kind of sputter equipment etc.; The erosion that sputter hits (errosion) mode is different, can not corrode equably.This problem is not limited to magnetron sputtering method, in other sputtering method, exists too.
When the darkest place of erosion of target reached capacity, target had just lost effectiveness, the target that more renew.Generally speaking, target forms tabular or cylindric.
In addition, when deep etching was carried out in the part of target, sputter can not be carried out equably, thereby also can produce the such problem of homogeneity (homogeneity of thickness) deterioration of film.
In addition, although the thickness of target is also residual sometimes, also can lose effectiveness.This is because in the usage period of target, the such management value of the homogeneity (homogeneity of thickness) of the film of in film formation process, confirming or operation wastage rate surpasses the permissible value of certain setting.At this moment, in the time of continuing to use same target, owing to surpassed permissible value,, also need be replaced by new target even therefore residual on the target have thickness.That is, the life-span of target becomes than original weak point.
Because like this, various designs have been carried out in the structure aspects of the assembly of the structure of the structure of the planation surface of target, backing plate and target and backing plate.For example, in following patent documentation 1, proposed: cut apart in target at rectangular parallelepiped more, in the target that suffers erosion, exist under the situation of difference of height, from the target of highly high target surface to highly low face tilt.At this moment, the planation surface of target and the distance of substrate and this planation surface are inhomogeneous with the distance of the magnet at the back side that is disposed at target, therefore exist the sputter initial stage can not carry out the problem of even sputter.
In following patent documentation 2, proposed: backing plate is formed convex, and upload to put at this backing plate and cut apart target and when engaging,, the target of end is formed the target-backing plate assembly of L type in order easily to remove the joint compound between target.At this moment,, therefore exist and to control and the shape that corrodes corresponding target, and, therefore do not have versatility because backing plate is the convex of constant shape owing to be purpose only to remove joint compound easily.
In following patent documentation 3, proposed: the design of the sputtering target of inclination mode and the backing plate that is used to keep this target.At this moment, in order to prevent the skew of gravity direction, backing plate forms the dentation of geta, and target forms the shape that embeds in this convex.At this moment, do not design especially yet, can not control and the shape that corrodes corresponding target for the service efficiency (utilising efficiency) that improves target.In addition, because backing plate also has special shape, therefore there is the problem of no versatility.
In following patent documentation 4, the service efficiency that improves target is designed.At this moment, the section of the planation surface of target forms the type of falling M.The problem that occurs in the case is: since initial stage planation surface and substrate and not parallel with the magnet of the rear side that is disposed at target, the problem that the particle that flies when therefore from the initial stage to the mid-term, having sputter becomes irregular (becoming then).
In following patent documentation 5, the bottom surface of target is crooked, and the upper surface of backing plate is with the form formation depression of the bottom surface of cooperation target.At this moment, also considered the service efficiency of target, still, target and backing plate all have special shape, therefore have the problem complicated, that cost is high of making, and in addition, because backing plate has special shape, therefore have the problem of no versatility.
In following patent documentation 6, be the target of collar plate shape equally, backing plate also is a collar plate shape, and for can their location of visual inspection, is formed with concavo-convex along the shape of the circumference of disk.Because target and backing plate all have special shape, therefore there is the problem complicated, that cost is high of making, in addition,, therefore there is the problem of no versatility because backing plate has special shape.
In following patent documentation 7,, be logged into aspect " target that target thickness is increased " also effective like Fig. 3 (a) or (c).But, its particle of pointing out that the target (initial stage planation surface and substrate and with the uneven target of the magnet of the rear side that is disposed at target) of this shape flies when having sputter problem of irregular (becoming then) that becomes.That is, though service efficiency is high, also can estimate to exist following problem: the variation of the film forming speed during target uses is big, and arcing produces often, and the process loss rate is high.
In addition, in this patent documentation 7, put down in writing Fig. 3 (a) and (b) with (c) in any target 1 all be not to join on the cooled plate 2 but target 1 is fixed to the embodiment that uses on the cooled plate 2 through support.According to this method; For the stupalith that has with the approaching thermal conductivity of ITO; Under the incomplete situation of adaptation of cooled plate (backing plate) and support, exist because the cooling in the sputter is insufficient, therefore produce the break high problem of possibility of such fault of target.
Can find out according to above content; For existing sputtering target; The problem that do not design is considered in existence from following viewpoint: the service efficiency of target is high, just can carry out uniform sputter since the sputter at initial stage, and target is simple shape, easy making with backing plate.In addition, also there is problems such as producing arcing.
Patent documentation 1: No. 3760652 communique of Japanese Patent
Patent documentation 2: TOHKEMY 2009-57598 communique
Patent documentation 3: TOHKEMY 2005-200682 communique
Patent documentation 4: TOHKEMY 2007-224392 communique
Patent documentation 5: Japan special table 2007-505217 communique
Patent documentation 6: TOHKEMY 2009-144186 communique
Patent documentation 7: japanese kokai publication sho 59-232217 communique
Summary of the invention
The present invention in view of the above problems or defective and founding, so the generation that its purpose is to be provided at the good and powder of the homogeneity (homogeneity of thickness) that can make film in initial stage and the whole sputter procedure of target is less and long target of the life-span of target, the method for manufacture and the target-backing plate assembly of this target.
In order to address the above problem; The backing plate that the inventor is conceived to the shape of sputtering target and is used to support target; Find: through being set at the target shape after estimating to corrode, and use this target to carry out sputter, can in whole sputter procedure, make the homogeneity (homogeneity of thickness) of film good; And the generation of powder is few, and can prolong the life-span of target.In addition, " the high service efficiency target " that uses in this specification sheets is meant the target that has the shape after estimating to corrode like this.
Based on above discovery, the present invention provides:
1) a kind of target-backing plate assembly; Be used for magnetron sputtering; It is characterized in that; The magnet at the planation surface of target and the back side that is disposed at target and the distance of the substrate surface relative with target are constant separately, and this target is so that the mode that the position that suffers erosion owing to sputter thickens possesses the concaveconvex shape that thickness is changed in backing plate face side, and possess the pad that comprises conductive material at backing plate and thin portion with the target between the target of concaveconvex shape.
In addition, the present invention provides:
2) above-mentioned 1) described target-backing plate assembly; It is characterized in that; Bottom in the both sides of the length direction of target is from the position more than the planation surface 0.5mm of the target after finally suffering erosion, towards the edge part of the both sides of the length direction of target and the bottom of target; And junction surface as the backing plate of the lower surface of target between, possess notch portion.
3) above-mentioned 1) or 2) described target-backing plate assembly, it is characterized in that target is two to cut apart the above target of cutting apart.
4) above-mentioned 1) to 3) in each described target-backing plate assembly, it is characterized in that each personal solder bonds of target, backing plate and pad.
The present invention also provides:
5) above-mentioned 1) to 4) in each described target-backing plate assembly, it is characterized in that sputtering target is indium, tin, aluminium, copper, tantalum, titanium, nickel, cobalt, ruthenium, tungsten, rhodium or their alloy or oxide compound.
6) above-mentioned 1) to 5) in each described target-backing plate assembly, it is characterized in that pad is with copper, aluminium, titanium, molybdenum or with they alloys as principal constituent.
7) above-mentioned 1) to 6) in each described target-backing plate assembly, it is characterized in that the thickness of the target at thick position and the target at thin position and the aggregate thickness of pad are constant.
The present invention also provides:
8) above-mentioned 1) to 7) in each described target-backing plate assembly, it is characterized in that with respect to the medullary ray of the length direction of target, target is asymmetrical.
9) above-mentioned 1) to 8) in each described target-backing plate assembly, it is characterized in that it is the flat plate of the constant thickness of backing plate.
10) above-mentioned 1) to 8) in each described target-backing plate assembly, it is characterized in that only the thickness at the both ends of the length direction of backing plate is littler than other thickness, and have the discrepancy in elevation on the border of thickness.
The invention effect
Target-backing plate assembly of the present invention has following excellent results: can prolong the life-span of this target, and can make the homogeneity (homogeneity of thickness) of film good at the sputter initial stage and in whole sputter procedure, and the generation of powder is few.
In addition, has following effect:, also can corrode and easily produce high service efficiency target according to the inherent target even the erosive that exists the kind because of target material to change is different.
Description of drawings
Fig. 1 is vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of target-backing plate assembly of embodiment 1.
Fig. 2 is the result's that changes of the film forming speed of expression embodiment and comparative example figure.
Fig. 3 is the figure that the arcing of expression embodiment and comparative example produces the result of number of times.
Fig. 4 is result's the figure of the operation wastage rate of expression embodiment and comparative example.
Fig. 5 is vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of the target-backing plate assembly of comparative example 1.
Fig. 6 is vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of the target-backing plate assembly of comparative example 2.
Fig. 7 is vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of the target-backing plate assembly of comparative example 3.
Fig. 8 is vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of target-backing plate assembly of embodiment 2.
Fig. 9 is vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of the target-backing plate assembly of comparative example 4.
Figure 10 is vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of the target-backing plate assembly of comparative example 5.
Figure 11 is vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of the target-backing plate assembly of comparative example 6.
Embodiment
A kind of magnetron sputtering is with target-backing plate assembly.Target can be applied to various targets such as rectangle, circle, ellipse, the not special restriction of shape.In magnetron sputtering, in order to improve sputtering yield, the distributed magnet at the back side of target still, can produce the part that receives strong erosion and do not receive strong erosion according to the configuration of magnet or the intensity of magneticline of force.
This depends on sputter equipment, and still, target-backing plate assembly need have can tackle this situation, can carry out stable sputter, and can make the more uniform structure of homogeneity of film.
But as substruction, the distance of the magnet at the planation surface that needs target and the back side that is disposed at target and the substrate surface relative with target is constant respectively.
On the other hand, as stated, produce the part that receives the part of strong erosion and do not receive strong erosion, still, receive the life-span of the position decision target of strong erosion.
But,, also require to improve the whole service efficiency of target even under these circumstances.About existing sputtering target, the technology with the position thickening that receives strong erosion of target has been proposed.But at this moment, have following problem: because the distance between target and substrate is non-constant, therefore particularly at the sputter initial stage, the homogeneity of film is unstable.
In view of such problem, in the application's invention, target is so that the mode that the position that suffers erosion owing to sputter thickens has the concaveconvex shape that thickness is changed in backing plate face side.At this moment, importantly introduce the pad that comprises conductive material at backing plate and thin portion with the target between the target of concaveconvex shape.When the material of pad was used with backing plate material of the same race, can not be a problem especially in the adaptation aspect, and evaporation efficiency is also equal, therefore can be described as suitable material.
, existed under the concavo-convex situation in the past, formed and this concavo-convex corresponding concavo-convex (anti-concavo-convex) at the face of the upside of backing plate at the lower surface of target.But the making that there is backing plate in this situation is complicated problems very.But, in the application's invention, only be to introduce pad, therefore have the unusual effect that can eliminate the complexity in the backing plate making fully.
Look, look like the distortion of backing plate, but do not have the target-backing plate assembly of this structure in the past.Think that the understanding that target and backing plate are necessary for one is its reason.
But the application's invention has solved this problem through a large amount of experiments through introducing pad.In addition; Target of the present invention is so that the mode that the position that suffers erosion owing to sputter thickens has the concaveconvex shape that thickness is changed in backing plate face side; And, therefore can obtain the effect that has good uniformity of film from the sputter initial stage to mid-term owing to being planeform in sputter initial stage sputter face.
In addition, target of the present invention from mid-term to latter stage, compare with concavo-convex target is set on planation surface, also can obtain the homogeneity deterioration demulcent effect of film.It is thus clear that, the target of the application invention from the sputter initial stage to latter stage, compare with concavo-convex target is set on the planation surface of target, the homogeneity of film is all good especially.
In addition; The present invention is in target-backing plate assembly; Expectation: the bottom in the both sides of the length direction of target, from the position more than the planation surface 0.5mm of the target after finally suffering erosion, towards the edge part of the both sides of the length direction of target and the bottom of target; And junction surface as the backing plate of the lower surface of target between, form notch portion.
Like this, making the effect that is produced aspect target-backing plate assembly be: it is extremely easy that target is carried the operation that places on the backing plate and weld.As a result, though target-backing plate assembly adopts this structure,, can not cause obstacle to spatter film forming thus.
In this target-backing plate assembly, target can form two and cut apart the above target of cutting apart, and can make the target-backing plate assembly of long size thus.The advantage that has in addition is that the processing ease of target, backing plate, each personal solder bonds of pad carries out, and the application's invention just can provide this target-backing plate assembly.As scolder, not special restriction can be used low-melting scolders such as indium.
In target-backing plate assembly of the present invention,, can use indium, tin, aluminium, copper, tantalum, titanium, nickel, cobalt, ruthenium, tungsten, rhodium or their alloy or oxide compound as sputtering target.Be particularly suitable for making ITO display materials such as (oxide compounds of indium and tin) and use target.In addition, as pad, so long as conductive material then can be used, special expectation is copper, aluminium, titanium, molybdenum or their alloy.
In addition, this pad also can use the material with the backing plate homogeneity as stated.In addition, for adaptation or the evaporation efficiency that increases pad and target or backing plate, also can carry out bottoming such as plating or ion plating and handle.The application's invention comprises these aspects.Pad also has the effect that prevents that target from tilting at backing plate.
In target-backing plate assembly, can be set at identical with the target at thin position and the aggregate thickness of pad the thickness of the target at thick position.
This be because: can prepare the different a plurality of shims of size, regulate arbitrarily.In addition, can easily to make the medullary ray target with respect to the long side direction of target be asymmetrical target-backing plate assembly in the present invention.This be equally because: can prepare the different a plurality of shims of size, can regulate arbitrarily thus.This is a notable feature of the present invention.
The remarkable advantage that has thus is: can be applied to the flat plate of the constant thickness of backing plate, need the shape of backing plate not designed.In addition, also can use the thickness at the both ends of the length direction of backing plate only littler naturally, and have the simple backing plate of the discrepancy in elevation on the border of thickness than other thickness.The application's invention comprises these aspects.
When making erosion profile target of the present invention, can use flat target to carry out sputter in advance, investigate the erosion shape and the degree of depth of this moment, and regulate the thickness of target based on this.
Thus, even the erosive that exists the kind because of target material to change is different, also can corrodes and easily produce high service efficiency target according to the inherent target.
Target-backing plate assembly of the present invention, the advantage that has is: the life-span of making extremely easily and can prolong this target.In addition, the excellent results that has is: in sputter initial stage and whole sputter procedure, can make having good uniformity of film, and the generation of powder is few.In addition, the unusual effect that has is: even the erosive that exists the kind because of target material to change is different, also can corrodes and easily produce high service efficiency target according to the inherent target.
Embodiment
Below, based on embodiment the present invention is described.In addition, following embodiment is used for easily understanding the present invention, the invention is not restricted to these embodiment.That is, other example or the distortion based on technical conceive of the present invention is also included among the present invention certainly.
(embodiment 1)
Use copper backing plate and target shown in Figure 1, use ITO (indium tin oxide) as target.Fig. 1 representes vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of target-backing plate assembly.Shown in Figure 1 like this, the backing plate of target-backing plate assembly of embodiment 1 is overlooked and is that rectangle (rectangle), the both ends of the length direction of target are oval.At this moment, target is cut apart in use.This cuts apart the bottom of both sides of length direction of target, and the left and right sides is asymmetric in the longitudinal direction.
About backing plate, use backing plate with the both sides attenuate 5.0mm of length direction, promptly the discrepancy in elevation is the backing plate of 5.0mm.In this discrepancy in elevation portion, be the thin side of backing plate, place 4.5mm made of copper thick with the thick pad of 5.0mm, utilize the indium scolder that target, pad and backing plate are engaged respectively.The place that the thickness of target is different, corresponding its thickness (thinness), the pad of insertion suitable thickness between target and backing plate.
Use this ITO (indium tin oxide) target, carry out magnetron sputtering.Sputtering condition is to carry out sputter up to 1600kWh with sputtering power 10kW.Weight was 18.8kg before a slice target used, and used back weight to be 11.2kg.As a result, service efficiency is 40%, is the efficient higher than following comparative example.This result is as shown in table 1.Service efficiency can not have significant change because of the kind of target material, and the same ITO target of therefore following use makes an experiment.
In order to observe the sputter characteristic, the change of film forming speed is investigated.Its result is as shown in table 2.The data of table 2 are illustrated obtain Fig. 2.The expression that compares that is set at 100 o'clock when beginning using is even accumulation electric energy 1600kWh also can keep 95.
In addition, as the sputter characteristic, the arcing number of times is investigated.Its result is as shown in table 3.The data of table 3 are illustrated obtain Fig. 3.When using beginning is 0, and follows the tendency of proceeding to increase gradually along with sputter, even but the accumulation electric energy is 1600kWh also can obtain the low result of arcing generation number of times with about 87 times.
In addition, the operation wastage rate are investigated.These operation wastage rate are to be the disqualification rate of the LCD panel of reason with the ITO powder more than the size 20 μ m that in the ITO sputter, produce for example.Its result is as shown in table 4.In addition, the data of table 4 are illustrated obtain Fig. 4.Accumulation electric energy 1600kWh obviously can find out from this result, even also can obtain the low result of operation wastage rate with about 0.28.
Can find out from above result, with after the comparative example stated compare, all obtain excellent results under arbitrary situation.
Table 1
The service efficiency of embodiment and comparative example
| Weight (kg) before using | Use back weight (kg) | The weight of using (kg) | Service efficiency (%) | |
| |
18.8 | 11.2 | 7.6 | 40％ |
| Comparative example 1 | 25.2 | 17.7 | 7.5 | 30％ |
| Comparative example 2 | 23.0 | 15.6 | 7.4 | 32％ |
| Comparative example 3 | 23.0 | 15.5 | 7.5 | 33％ |
| Embodiment 2 | 18.8 | 11.3 | 7.5 | 40％ |
| Comparative example 4 | 37.3 | 29.8 | 7.5 | 20％ |
| Comparative example 5 | 34.5 | 27.0 | 7.5 | 22％ |
| Comparative example 6 | 34.5 | 26.9 | 7.6 | 22％ |
Table 2
The sputter characteristic of embodiment and comparative example
A. the change of film forming speed (will use beginning the time to be set at 100 o'clock comparing)
| Accumulation electric energy (kWh) | 0 | 400 | 800 | 1200 | 1600 |
| |
100 | 99 | 98 | 97 | 95 |
| Comparative example 1 | 100 | 99 | 97 | 95 | 93 |
| Comparative example 2 | 100 | 97 | 93 | 90 | 85 |
| Comparative example 3 | 100 | 97 | 94 | 90 | 86 |
| Embodiment 2 | 100 | 99 | 96 | 95 | 94 |
| Comparative example 4 | 100 | 98 | 96 | 94 | 93 |
| Comparative example 5 | 100 | 97 | 93 | 88 | 83 |
| Comparative example 6 | 100 | 96 | 93 | 89 | 84 |
Table 3
B. arcing produces number of times
| Accumulation electric energy (kWh) | 0 | 400 | 800 | 1200 | 1600 |
| |
0 | 8 | 17 | 33 | 87 |
| Comparative example 1 | 0 | 10 | 20 | 37 | 90 |
| Comparative example 2 | 0 | 13 | 25 | 55 | 143 |
| Comparative example 3 | 0 | 11 | 22 | 49 | 139 |
| Embodiment 2 | 0 | 10 | 18 | 35 | 89 |
| Comparative example 4 | 0 | 11 | 22 | 38 | 93 |
| Comparative example 5 | 0 | 15 | 28 | 60 | 155 |
| Comparative example 6 | 0 | 14 | 25 | 60 | 148 |
Table 4
C. operation wastage rate
| Accumulation electric energy (kWh) | 0 | 400 | 800 | 1200 | 1600 |
| |
0.00 | 0.06 | 0.13 | 0.19 | 0.28 |
| Comparative example 1 | 0.00 | 0.09 | 0.18 | 0.22 | 0.37 |
| Comparative example 2 | 0.00 | 0.14 | 0.29 | 0.41 | 0.63 |
| Comparative example 3 | 0.00 | 0.13 | 0.26 | 0.40 | 0.59 |
| Embodiment 2 | 0.00 | 0.06 | 0.14 | 0.19 | 0.30 |
| Comparative example 4 | 0.00 | 0.08 | 0.20 | 0.26 | 0.35 |
| Comparative example 5 | 0.00 | 0.15 | 0.33 | 0.52 | 0.69 |
| Comparative example 6 | 0.00 | 0.14 | 0.31 | 0.49 | 0.66 |
(comparative example 1)
Use copper backing plate and target shown in Figure 5, likewise use ITO (indium tin oxide) as target with embodiment 1.Fig. 5 representes vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of target-backing plate assembly.Shown in Figure 5 like this, the backing plate of the target-backing plate assembly of comparative example 1 is overlooked and is that rectangle (rectangle), the both ends of the length direction of target are oval.At this moment, target is cut apart in use.About backing plate, use backing plate with the about 5.0mm of both sides attenuate of length direction, promptly the discrepancy in elevation is the backing plate of 5.0mm.
To should discrepancy in elevation portion, promptly, use the thick target of 5mm in the thin side of backing plate, the thickness of the target at two ends is that the thickness of the target that exists of 11.5mm, central authorities is 6.5mm, is in conplane mode with these targets and disposes and cut apart target.And, utilize the indium scolder that they are directly engaged with backing plate.Cutting apart beyond the target of both ends, be the thick target of 6.5mm.
Use this ITO (indium tin oxide) target-backing plate assembly, carry out magnetron sputtering.Sputtering condition is to carry out sputter up to 1600kWh with sputtering power 10kW.
Weight was 25.2kg before a slice target used, and used back weight to be 17.7kg.As a result, service efficiency is 30%, is the efficient lower than the above embodiments 1.This result is as shown in table 1 equally.
In order to observe the sputter characteristic, likewise the change of film forming speed is investigated with embodiment 1.Its result such as table 2 are with shown in Figure 2.The expression that compares that is set at 100 o'clock when beginning using is 93 under accumulation electric energy 1600kWh, and is lower slightly than embodiment 1.In addition, as the sputter characteristic, the arcing number of times is investigated.Its result such as table 3 are with shown in Figure 3.When using beginning is 0, and follows the tendency of proceeding to increase gradually along with sputter, is to be 90 times under the 1600kWh at the accumulation electric energy still, and arcing produces number of times has increase slightly than embodiment 1.
In addition, the operation wastage rate are investigated.Its result such as table 4 are with shown in Figure 4.Its result is 0.37 under accumulation electric energy 1600kWh, and the operation wastage rate are high slightly.Can find out from above result, compare, arbitrary situation inequality with embodiment 1.
(comparative example 2)
Use copper backing plate and target shown in Figure 6, likewise use ITO (indium tin oxide) as target with embodiment 1.Fig. 6 representes vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of target-backing plate assembly.Shown in Figure 6 like this, the backing plate of the target-backing plate assembly of comparative example 2 is overlooked and is that rectangle (rectangle), the both ends of the length direction of target are oval.At this moment, target is cut apart in use.About backing plate, use backing plate with the both sides attenuate 5.0mm of length direction, promptly the discrepancy in elevation is the backing plate of 5.0mm.
To should discrepancy in elevation portion, promptly, use the thick target of 5mm in the thin side of backing plate.About the target of two edges portion, configuration and the target of another adjacency exist the discrepancy in elevation, the highest for 11.5mm and have the target of cutting apart that tilts to the upper surface of the 5.5mm target equal height of adjacency always, utilize the indium scolder that they are directly engaged with backing plate.
Use this ITO (indium tin oxide) target-backing plate assembly, carry out magnetron sputtering.Sputtering condition is to carry out sputter up to 1600kWh with sputtering power 10kW.
Weight was 23.0kg before a slice target used, and used back weight to be 15.6kg.As a result, service efficiency is 32%, is the efficient lower than the above embodiments 1.This result is as shown in table 1 equally.
In order to observe the sputter characteristic, likewise the change of film forming speed is investigated with embodiment 1.Its result such as table 2 are with shown in Figure 2.The expression that compares that is set at 100 o'clock when beginning using is 85 under accumulation electric energy 1600kWh, significantly reduces than embodiment 1.
In addition, as the sputter characteristic, the arcing number of times is investigated.Its result such as table 3 are with shown in Figure 3.When using beginning is 0, and follows the tendency of proceeding to increase gradually along with sputter, is to be 143 times under the 1600kWh at the accumulation electric energy still, and arcing produces number of times significantly to be increased than embodiment 1.
In addition, the operation wastage rate are investigated.Its result such as table 4 are with shown in Figure 4.As a result, under accumulation electric energy 1600kWh, be 0.63, the operation wastage rate significantly increase.
Can find out from above result, compare, the equal significance difference of arbitrary situation with embodiment 1.
(comparative example 3)
Use copper backing plate and target shown in Figure 7, likewise use ITO (indium tin oxide) as target with embodiment 1.Fig. 7 representes vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of target-backing plate assembly.Shown in Figure 7 like this, the backing plate of the target-backing plate assembly of comparative example 3 is overlooked and is that rectangle (rectangle), the both ends of the length direction of target are oval.At this moment, target is cut apart in use.About backing plate, use backing plate with the both sides attenuate 5.0mm of length direction, promptly the discrepancy in elevation is the backing plate of 5.0mm.
To should discrepancy in elevation portion, promptly, use the thick target of 5.0mm in the thin side of backing plate.About the target of two edges portion, configuration and the target of another adjacency exist the discrepancy in elevation, the highest for 11.5mm and have the target of cutting apart that tilts to the upper surface of the 5.5mm target equal height of adjacency always, utilize the indium scolder that they are directly engaged with backing plate.
At this moment, the target of two edges portion is crossed the discrepancy in elevation, and is as shown in Figure 7, extends to the target of central part always.That is, has the horizontal component that the thickness with the central part of thin thickness has same thickness.
Use this ITO (indium tin oxide) target-backing plate assembly, carry out magnetron sputtering.Sputtering condition is to carry out sputter up to 1600kWh with sputtering power 10kW.
Weight was 23.0kg before a slice target used, and used back weight to be 15.5kg.As a result, service efficiency is 33%, is the efficient lower than the above embodiments 1.This result is as shown in table 1 equally.
In order to observe the sputter characteristic, likewise the change of film forming speed is investigated with embodiment 1.Its result such as table 2 are with shown in Figure 2.The expression that compares that is set at 100 o'clock when beginning using is 86 under accumulation electric energy 1600kWh, significantly reduces than embodiment 1.
In addition, as the sputter characteristic, the arcing number of times is investigated.Its result such as table 3 are with shown in Figure 3.When using beginning is 0, and follows the tendency of proceeding to increase gradually along with sputter, is to be 139 times under the 1600kWh at the accumulation electric energy still, and arcing produces number of times significantly to be increased than embodiment 1.
In addition, the operation wastage rate are investigated.Its result such as table 4 are with shown in Figure 4.As a result, under accumulation electric energy 1600kWh, be 0.59, the operation wastage rate significantly increase.
Can find out from above result, compare, the equal significance difference of arbitrary situation with embodiment 1.
(embodiment 2)
Use copper backing plate and target shown in Figure 8, use ITO (indium tin oxide) as target.Fig. 8 representes vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of target-backing plate assembly.Shown in Figure 8 like this, the backing plate of target-backing plate assembly of embodiment 2 is overlooked and is that rectangle (rectangle), the both ends of the length direction of target are oval.At this moment, target is cut apart in use.This bottom and embodiment 1 of both sides of length direction of cutting apart target is same, and (concaveconvex shape) left and right sides is asymmetric in the longitudinal direction.Backing plate uses whole smooth backing plate.
And the target of length direction both sides uses the target that has the notch portion of 4.5mm and 5.0mm in backing plate one side.And, in the notch portion of this target, place the thick and thick pad of 5.0mm of 4.5mm made of copper respectively, utilize the indium scolder that target, pad and backing plate are engaged respectively.The place that the thickness of target is different, corresponding its thickness (thinness), the pad of insertion suitable thickness between target and backing plate.
Use this ITO (indium tin oxide) target, carry out magnetron sputtering.Sputtering condition is to carry out sputter up to 1600kWh with sputtering power 10kW.Weight was 18.8kg before a slice target used, and used back weight to be 11.3kg.As a result, service efficiency is 40%, is the efficient higher than following comparative example.This result is as shown in table 1.
In order to observe the sputter characteristic, equally the change of film forming speed is investigated.Its result such as table 2 are with shown in Figure 2.The expression that compares that is set at 100 o'clock when beginning using is even accumulation electric energy 1600kWh also can keep 94.
In addition, as the sputter characteristic, the arcing number of times is investigated.Its result such as table 3 are with shown in Figure 3.When using beginning is 0, and follows the tendency of proceeding to increase gradually along with sputter, even but the accumulation electric energy is 1600kWh also can obtain the low result of arcing generation number of times with 89 times.
In addition, the operation wastage rate are investigated.Its result such as table 4 are with shown in Figure 4.Accumulation electric energy 1600kWh obviously can find out from this result, even also can obtain the low result of operation wastage rate with about 0.30.Can find out from above result, compare, all obtain excellent results under arbitrary situation with comparative example.If particularly there is the discrepancy in elevation in the initial stage planation surface of target, the tendency that then disqualification rate is high strengthens.
(comparative example 4)
Use copper backing plate and target shown in Figure 9, likewise use ITO (indium tin oxide) as target with embodiment 2.Fig. 9 representes vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of target-backing plate assembly.Shown in Figure 9 like this, the backing plate of the target-backing plate assembly of comparative example 4 is overlooked and is that rectangle (rectangle), the both ends of the length direction of target are oval.At this moment, target is cut apart in use.Backing plate uses the whole backing plate that has an even surface.
And the target used thickness is the thick target of 11.5mm.And, with the indium scolder target and backing plate are engaged respectively.
Use this ITO (indium tin oxide) target-backing plate assembly, carry out magnetron sputtering.Sputtering condition is to carry out sputter up to 1600kWh with sputtering power 10kW.
Weight was 37.3kg before a slice target used, and used back weight to be 29.8kg.As a result, service efficiency is 20%, is the efficient lower than the above embodiments 2.This result is as shown in table 1 equally.
In order to observe the sputter characteristic, likewise the change of film forming speed is investigated with embodiment 2.Its result such as table 2 are with shown in Figure 2.The expression that compares that is set at 100 o'clock when beginning using is 93 under accumulation electric energy 1600kWh, than embodiment 2 reduction is arranged slightly.
In addition, as the sputter characteristic, the arcing number of times is investigated.Its result such as table 3 are with shown in Figure 3.When using beginning is 0, and follows the tendency of proceeding to increase gradually along with sputter, is to be 93 times under the 1600kWh at the accumulation electric energy still, and arcing produces number of times has increase slightly than embodiment 2.
In addition, the operation wastage rate are investigated.Its result such as table 4 are with shown in Figure 4.As a result, under accumulation electric energy 1600kWh, be 0.35, the operation wastage rate increase.
Can find out that from above result compare with embodiment 2, arbitrary situation is all poor slightly.
(comparative example 5)
Use copper backing plate and target shown in Figure 10, likewise use ITO (indium tin oxide) as target with embodiment 2.Figure 10 representes vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of target-backing plate assembly.Shown in Figure 10 like this, the backing plate of the target-backing plate assembly of comparative example 5 is overlooked and is that rectangle (rectangle), the both ends of the length direction of target are oval.At this moment, target is cut apart in use.Backing plate uses the whole backing plate that has an even surface.
And; Target about two edges portion; The target of configuration and another adjacency of central part exists the discrepancy in elevation, the highest for 11.5mm and have the target of cutting apart that tilts to the upper surface of the 10.5mm target equal height of adjacency always, utilizes the indium scolder that they are directly engaged with backing plate.
Use this ITO (indium tin oxide) target-backing plate assembly, carry out magnetron sputtering.Sputtering condition is to carry out sputter up to 1600kWh with sputtering power 10kW.
Weight was 34.5kg before a slice target used, and used back weight to be 27.0kg.As a result, service efficiency is 22%, is the efficient lower than the above embodiments 2.The result is as shown in table 1 equally.
In order to observe the sputter characteristic, likewise the change of film forming speed is investigated with embodiment 2.Its result such as table 2 are with shown in Figure 2.The expression that compares that is set at 100 o'clock when beginning using is 83 under accumulation electric energy 1600kWh, significantly reduces than embodiment 2.
In addition, as the sputter characteristic, the arcing number of times is investigated.Its result such as table 3 are with shown in Figure 3.When using beginning is 0, and follows the tendency of proceeding to increase gradually along with sputter, is to be 155 times under the 1600kWh at the accumulation electric energy still, and arcing produces number of times significantly to be increased than embodiment 2.
In addition, the operation wastage rate are investigated.Its result such as table 4 are with shown in Figure 4.As a result, under accumulation electric energy 1600kWh, be 0.69, the operation wastage rate significantly increase.
Can find out from above result, compare, the equal significance difference of arbitrary situation with embodiment 2.
(comparative example 6)
Use copper backing plate and target shown in Figure 11, likewise use ITO (indium tin oxide) as target with embodiment 2.Figure 11 representes vertical view (part), C-C sectional view, A-A sectional view, the B-B sectional view of target-backing plate assembly.Shown in Figure 11 like this, the backing plate of the target-backing plate assembly of comparative example 6 is overlooked and is that rectangle (rectangle), the both ends of the length direction of target are oval.At this moment, target is cut apart in use.Backing plate uses the whole backing plate that has an even surface.
Target about two edges portion; Configuration and the target of another adjacency exist the discrepancy in elevation, the highest for 11.5mm and have the target of cutting apart that tilts to the upper surface of the thick target equal height of the 10.5mm of the adjacency of central part always, utilize the indium scolder that they are directly engaged with backing plate.
At this moment, the target of two edges portion is crossed the discrepancy in elevation, and is shown in figure 11, extends to the target of central part always.That is, has the horizontal component that the thickness with the central part of thin thickness has same thickness.
Use this ITO (indium tin oxide) target-backing plate assembly, carry out magnetron sputtering.Sputtering condition is to carry out sputter up to 1600kWh with sputtering power 10kW.
Weight was 34.5kg before a slice target used, and used back weight to be 26.9kg.As a result, service efficiency is 22%, is the efficient lower than the above embodiments 2.This result is as shown in table 1 equally.
In order to observe the sputter characteristic, likewise the change of film forming speed is investigated with embodiment 2.Its result such as table 2 are with shown in Figure 2.The expression that compares that is set at 100 o'clock when beginning using is 84 under accumulation electric energy 1600kWh, significantly reduces than embodiment 2.
In addition, as the sputter characteristic, the arcing number of times is investigated.Its result such as table 3 are with shown in Figure 3.When using beginning is 0, and follows the tendency of proceeding to increase gradually along with sputter, is to be 148 times under the 1600kWh at the accumulation electric energy still, and arcing produces number of times significantly to be increased than embodiment 2.
In addition, the operation wastage rate are investigated.Its result such as table 4 are with shown in Figure 4.As a result, under accumulation electric energy 1600kWh, be 0.66, the operation wastage rate significantly increase.
Can find out from above result, compare, the equal significance difference of arbitrary situation with embodiment 2.If particularly there is the discrepancy in elevation in the initial stage planation surface of target, the tendency that then disqualification rate is high strengthens.
Industrial applicability
Target-backing plate assembly of the present invention; Has following effect: the life-span that can prolong this target; And can in whole sputter procedure, make having good uniformity of film; Even and exist because of the different erosive that change of kind of target material differently, also can easily produce and the inherent target corrodes corresponding target, so can be used as the target-backing plate assembly use that can be used in various materials.
Claims (10)
1. target-backing plate assembly; Be used for magnetron sputtering; It is characterized in that; The magnet at the planation surface of target and the back side that is disposed at target and the distance of the substrate surface relative with target are constant separately, and this target is so that the mode that the position that suffers erosion owing to sputter thickens possesses the concaveconvex shape that thickness is changed in backing plate face side, and possess the pad that comprises conductive material at backing plate and thin portion with the target between the target of concaveconvex shape.
2. target-backing plate assembly as claimed in claim 1; It is characterized in that; Bottom in the both sides of the length direction of target is from the position more than the planation surface 0.5mm of the target after finally suffering erosion, towards the edge part of the both sides of the length direction of target and the bottom of target; And junction surface as the backing plate of the lower surface of target between, possess notch portion.
3. according to claim 1 or claim 2 target-backing plate assembly is characterized in that, target is two to cut apart the above target of cutting apart.
4. like each described target-backing plate assembly in the claim 1 to 3, it is characterized in that each personal solder bonds of target, backing plate and pad.
5. like each described target-backing plate assembly in the claim 1 to 4, it is characterized in that sputtering target is indium, tin, aluminium, copper, tantalum, titanium, nickel, cobalt, ruthenium, tungsten, rhodium or their alloy or oxide compound.
6. like each described target-backing plate assembly in the claim 1 to 5, it is characterized in that pad is perhaps with they alloys as principal constituent with copper, aluminium, titanium, molybdenum.
7. like each described target-backing plate assembly in the claim 1 to 6, it is characterized in that the thickness of the target at thick position and the target at thin position and the aggregate thickness of pad are constant.
8. like each described target-backing plate assembly in the claim 1 to 7, it is characterized in that with respect to the medullary ray of the length direction of target, target is asymmetrical.
9. like each described target-backing plate assembly in the claim 1 to 8, it is characterized in that it is the flat plate of the constant thickness of backing plate.
10. like each described target-backing plate assembly in the claim 1 to 8, it is characterized in that only the thickness at the both ends of the length direction of backing plate is littler than other thickness, and have the discrepancy in elevation on the border of thickness.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009295129A JP4723668B2 (en) | 2009-12-25 | 2009-12-25 | Target backing plate assembly |
| JP2009-295129 | 2009-12-25 | ||
| PCT/JP2010/065921 WO2011077793A1 (en) | 2009-12-25 | 2010-09-15 | Target and backing plate assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102656289A true CN102656289A (en) | 2012-09-05 |
| CN102656289B CN102656289B (en) | 2014-06-18 |
Family
ID=44195341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080032231.0A Active CN102656289B (en) | 2009-12-25 | 2010-09-15 | Target and backing plate assembly |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4723668B2 (en) |
| KR (1) | KR101338714B1 (en) |
| CN (1) | CN102656289B (en) |
| TW (1) | TWI400350B (en) |
| WO (1) | WO2011077793A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104032270A (en) * | 2014-06-12 | 2014-09-10 | 贵研铂业股份有限公司 | Large-sized ruthenium-based alloy sputtering target and preparation method thereof |
| CN104112640A (en) * | 2013-04-16 | 2014-10-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering device and magnetron sputtering method |
| CN104746023A (en) * | 2013-12-26 | 2015-07-01 | 深圳市微普诺薄膜技术有限公司 | Motor closed-loop control magnetron sputtering plane cathode device |
| CN110546298A (en) * | 2017-04-20 | 2019-12-06 | 霍尼韦尔国际公司 | Special-shaped sputtering target and preparation method thereof |
| TWI736130B (en) * | 2019-03-28 | 2021-08-11 | 日商Ｊｘ金屬股份有限公司 | Sputtering target product and manufacturing method of sputtering target product regenerated product |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5916447B2 (en) * | 2012-03-14 | 2016-05-11 | Hoya株式会社 | Mask blank manufacturing method and transfer mask manufacturing method |
| CN105908137B (en) * | 2015-02-24 | 2020-12-15 | Ｊｘ金属株式会社 | Sputtering target |
| CN112663015B (en) * | 2020-12-14 | 2022-10-14 | 上海超导科技股份有限公司 | Target pit testing device and feedback control target walking method thereof |
| US11492699B2 (en) * | 2021-02-17 | 2022-11-08 | Applied Materials, Inc. | Substrate temperature non-uniformity reduction over target life using spacing compensation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001316798A (en) * | 2000-05-09 | 2001-11-16 | Toshiba Corp | Target device and sputtering system using it |
| JP2009057598A (en) * | 2007-08-31 | 2009-03-19 | Mitsui Kinzoku Korea Co Ltd | Sputtering target |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63235471A (en) * | 1987-03-24 | 1988-09-30 | Nec Corp | Target for sputtering device |
| JPH06140330A (en) * | 1992-10-05 | 1994-05-20 | Nippon Steel Corp | Sputtering device |
| JPH08109472A (en) * | 1994-10-14 | 1996-04-30 | Asahi Glass Co Ltd | Target for sputtering and its production |
| JPH08170170A (en) * | 1994-12-16 | 1996-07-02 | Tosoh Corp | Sputtering target |
| US8968536B2 (en) * | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
-
2009
- 2009-12-25 JP JP2009295129A patent/JP4723668B2/en active Active
-
2010
- 2010-09-15 CN CN201080032231.0A patent/CN102656289B/en active Active
- 2010-09-15 KR KR1020117020907A patent/KR101338714B1/en active IP Right Grant
- 2010-09-15 WO PCT/JP2010/065921 patent/WO2011077793A1/en active Application Filing
- 2010-10-21 TW TW099135893A patent/TWI400350B/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001316798A (en) * | 2000-05-09 | 2001-11-16 | Toshiba Corp | Target device and sputtering system using it |
| JP2009057598A (en) * | 2007-08-31 | 2009-03-19 | Mitsui Kinzoku Korea Co Ltd | Sputtering target |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104112640A (en) * | 2013-04-16 | 2014-10-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering device and magnetron sputtering method |
| CN104112640B (en) * | 2013-04-16 | 2016-12-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of magnetron sputtering apparatus and magnetically controlled sputter method |
| CN104746023A (en) * | 2013-12-26 | 2015-07-01 | 深圳市微普诺薄膜技术有限公司 | Motor closed-loop control magnetron sputtering plane cathode device |
| CN104746023B (en) * | 2013-12-26 | 2018-01-09 | 深圳市速普仪器有限公司 | Motor closed-loop control magnetron sputtering planar cathode device |
| CN104032270A (en) * | 2014-06-12 | 2014-09-10 | 贵研铂业股份有限公司 | Large-sized ruthenium-based alloy sputtering target and preparation method thereof |
| CN110546298A (en) * | 2017-04-20 | 2019-12-06 | 霍尼韦尔国际公司 | Special-shaped sputtering target and preparation method thereof |
| US11244815B2 (en) | 2017-04-20 | 2022-02-08 | Honeywell International Inc. | Profiled sputtering target and method of making the same |
| CN110546298B (en) * | 2017-04-20 | 2022-03-01 | 霍尼韦尔国际公司 | Special-shaped sputtering target and preparation method thereof |
| TWI736130B (en) * | 2019-03-28 | 2021-08-11 | 日商Ｊｘ金屬股份有限公司 | Sputtering target product and manufacturing method of sputtering target product regenerated product |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI400350B (en) | 2013-07-01 |
| JP2011132587A (en) | 2011-07-07 |
| JP4723668B2 (en) | 2011-07-13 |
| WO2011077793A1 (en) | 2011-06-30 |
| CN102656289B (en) | 2014-06-18 |
| TW201126004A (en) | 2011-08-01 |
| KR101338714B1 (en) | 2013-12-06 |
| KR20110113207A (en) | 2011-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102656289B (en) | Target and backing plate assembly | |
| EP1813693B1 (en) | Sputtering target backing plate assembly and film deposition system | |
| WO2016086428A1 (en) | Vacuum ion sputtering target device | |
| JP4473852B2 (en) | Sputtering apparatus and sputtering method | |
| US20070107185A1 (en) | Sputtering target assembly having low conductivity backing plate and method of making same | |
| KR20170117970A (en) | Sputtering target-backing plate assembly | |
| CN204162776U (en) | A kind of target material assembly | |
| CN102791904B (en) | Sputtering target | |
| CN204162777U (en) | A kind of target material assembly | |
| KR101347967B1 (en) | Ito sputtering target | |
| JP2010106330A (en) | Method for manufacturing sputtering target, sputtering target, and sputtering apparatus | |
| CN203462119U (en) | Magnetron sputtering device | |
| WO2021157112A1 (en) | Sputtering target | |
| CN105525269A (en) | Magnetron sputtering device | |
| CN213951332U (en) | Target assembly with anti-drop structure | |
| JP2020517820A (en) | Profiled sputtering target and manufacturing method thereof | |
| CN110291222B (en) | Silicon target material | |
| CN217324266U (en) | Deposition system based on large-area rectangular magnetron sputtering target gun | |
| CN210140622U (en) | Auxiliary anode device and vacuum magnetron sputtering equipment with same | |
| JP2017036510A (en) | Sputtering target-backing plate conjugate | |
| JPWO2017038476A1 (en) | Atomic beam source | |
| JP3778501B2 (en) | Sputtering apparatus and sputtering method | |
| CN203007392U (en) | Anti-dropping plate as well as anti-dropping plate-target assembly and plasma sputtering equipment | |
| CN110997973A (en) | Film forming method | |
| KR20080090704A (en) | Sputtering target and sputtering apparatus using the same, and febrication method for sputtering target |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS CORPORATION Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corporation |