201126004 六、發明說明： 【發明所屬之技術領域】 本發明提供-㈣支持板組裝體，其可延長乾之壽 命、並且使得在濺鑛過程十膜之均句性（膜厚之均—性）良 好，又即便存在因乾材之種類而變化的㈣（⑽刚）差異， 亦可容易地製造因應固有之^賤姓的高使用效率乾。、 【先前技術】 藉由㈣之薄膜之形成方法可廣泛用於製造各種電 子、電氣零件等。 濺錢法係使用以下原理：使成為陽極之基板與成為陰 極^㈣向，於惰性氣體環境下對該等基板料之間施 加问電壓而產生電場，此時電離之電子與惰性氣體碰撞而 形成電漿，該電漿中之陽雜； ^之刼離子碰撞靶表面而撞出靶構成原 子’該：出之原子附著於相對向之基板表面而形成膜。 目刖/賤鍍多數使用被稱為所謂磁控滅鑛之方法。磁 控錢法係於乾之背側設置磁石’使乾表面產生方向與電 場垂直之磁場而進行滅鑛之方法’具有以下特徵·於此種 正=電磁場空間内可實現電聚之穩定化及高密度化，從而 提高濺鑛速度。 〃通常’磁控機錢係於磁場中捕捉電子而有效地將減錢 氣體電離c曰因磁體之構造或種類、進而減鑛條件、靶 之材質濺鑛裝置之種類等，造成濺鑛中之乾之侵银（賤蚀） 式有斤$ @ ’賤敍不均。其並不限於磁控滅鍍法，於 201126004 其他濺鍍法中亦同。 把被最深程度地職触至创 】達極限之處即到達壽命级 點’而需要更換新把。通常乾形成平板狀或圓筒形。、 二若把被局部較深地濺触，則亦會產 會不均地引起濺鍍，獏之均勻 生（膜厚之均一性）惡化。 進而，不論靶是否殘留堉 X ’都將迎來壽命終點。其 為如下情況：於靶壽命中谂，+丄 ^ 途在成膜製程中所確定的膜之 均勻性（膜厚之均一性）或步驟 )飞，驟知失率之管理 定容許值。此時，若持續 承们0又 項便用β亥靶，則由於會超過容許值， 而即便靶殘留有厚度，亦需要 Λ ^ 眾要更換新靶。即，靶之壽命較 原本短。 因此，在靶之濺蝕面之槿 再k 支持板之構造、進而乾 與支持板之組裝體之構诰的古 稱艳的方面集中了各種嘗試。例如， 於下述專利文獻1中提出一 徑長方體之多分割輕，係於受 到濺蝕之分割靶存在高低羔眸， 、 · ' 自南度較尚之輕面向高度 較低之面形成斜面之靶。此，^ ^ ^ ^ ^ ^ ^ ^ ^ τ 粑之濺蝕面與基板的距離 及該濺甜面與配置絲f面之磁體的距離不均―，因此存 在於濺鍍初期濺鍍不均之問題。 於下述專利文獻2中提出有：將支持板製成四型，於 該支持板上載置分㈣，進行接合時，為了可容易地去除 =之接合劑，而將端部之乾製…型之乾—支持板組 裝體。此時存在以下問冑：由於目的僅為使接合劑容易去 除因此無法進行因應濺蝕之靶的形狀控制，又由於支持 板為固定形狀之凸型，因此不具有通用性。 201126004 下述專利文獻3提出了對傾斜方式之錢鐘起與將直保 持板進行研究。此時為了防止重力方向之偏移:、將 '反形成為木屐之齒狀’成為於該凸型上鑲嵌靶之形 亦未特別對提尚靶之使用效率（利用效率）進行研究， 且無法進行因應㈣之#的形狀控制。又，支持板亦存在 因具有特異形狀而不具有通用性之問題。 下述專利文獻4巾對提高$之使用效率進行研究。此 ，面之剖面形成為倒Μ字型。此時成為問題的 疋由於初期濺钱面與基板及配置於乾背面側之磁體不平 '亍因此有自初期至中期，於賤鑛時飛翔之粒子變得不規 則（不合規則）之問題。 下述專利文獻5中提出，乾之底面冑曲，又於支持板 之上面與靶之底面重合之形狀形成凹陷。此時雖然考慮到 靶之使用效率，但由於靶、支持板均具有特異形狀，因此 存在製作複雜且成本升咼之問題，又由於支持板具有特異 形狀，而存在不具有通用性之問題。 下述專利文獻6中提出，同樣為圓盤型靶、且支持板 亦為圓盤型’ Α 了可目視該等之定位，而形成沿著圓盤之 圓周的形狀之凹凸。由於乾、支持板均具有特異形狀，因 此存在製作複雜且成本升高之㈣，又由於支持板具有特 異形狀，而存在不具有通用性之問題。 下述專利文獻7 +，如第3圖⑷或（c)所示般，闡述了 於「於所丨賤鍍之面增加靶厚度者」亦有效。但指出，此種 形狀者（初期濺蝕面與基板及配置於靶背面側之磁體不平行 201126004 者）存在濺鍍時飛翔之粒子變得不規則（不合規則）之問題。 即，即便使用效率較高，但預料會存在以下問題：靶使用 中之成膜速度之變化較大，且電弧（arcing)產生次數較多， 步驟損失率較高。 又，於該專利文獻7中有如下實施例：第3圖（a)、（b)、 (c)之任-圖中，乾i並非接合於水冷板2者而是藉由固 持器將lb 1 S]定於水冷& 2上而使用。若為該方法，則存 在以下問S :於具# IT0般之導熱率的陶曼材料中，於水 冷板（支持板）與ϋ持器之密合性不完全射之冷卻不 充分，且產生靶破裂之問題的可能性升高。 根據以上所述，於先前之濺鍍靶中存在以下問題：於 以下觀點方面並未進行嘗試：乾之使用效率較高，自初期 之賤鍍時起可均句㈣，且容易以單純之形態製作把及支 持板。又’存在有產生電弧之問題等的缺點。 專利文獻1 : 專利文獻2 : 專利文獻3 : 專利文獻4 : 專利文獻5 : 專利文獻6 : 專利文獻7 : 曰本專利第3760652號公報 日本特開2009— 57598號公報 日本特開2005— 200682號公報 曰本特開2007— 224392號公報 曰本特表2007— 505217號公報 日本特開2009~ 144186號公報 曰本特開昭59— 232271號公報 【發明内容】 本發明係鑒於如上戶斤 述之問題或缺點 而完成者，且提 201126004 供一種在柄跨靶之初期及濺鍍過程中膜之均句性（膜厚之均 一性）良好，並且粒子產生較少，進而靶之壽命較長的靶、 遠乾之製造方法及乾一支持板。 為了解決上述課題，本發明人著眼於濺鍍用靶之形狀 以及支持其之支持板，而獲得以下知識見解：製成預先設 ?到濺蝕之靶形狀’使用該靶進行濺鍍，藉此使得濺鍍過 私中膜之均勻性（膜厚之均—性）良好，並且粒子產生較少， 進而可延長靶之壽命。再者’本說明書中所使用之「高使 用效率靶」係指如上所述具有預料到濺蝕之形狀之靶。 本發明係根據上述知識見解而提供： 且υ乾支持板組裝體，其係磁控濺錢絲支持板組裝體， 其特徵在於：靶之濺蝕面與配置於靶背面之磁體及與靶對 向之基板面的距離分別固定，該靶以因濺鍍而受到濺蝕之 部位變厚之方4 万式於支持板面側具備厚度發生變化的凹凸形 狀，支持板與具有凹凸形狀之乾間之把的薄壁部分具備由 導電性材料所構成之間隔件； 本發明又提供： 2)如上述1)之乾支持板組裝體，纟中於輕之長度方向 兩側底部’自距離受到最終濺蝕之靶的濺蝕面0.5 mm以 卜""fit, 向靶之長度方向兩側的邊部及靶之底部，於與 3下面即支持板之接合面之間具備凹痕部； .、 )上述丨）或2)之靶支持板組裝體，其中，靶為2以 上之分割靶； 4)如上述 Π $ h / )至3)中任一項之靶支持板組裝體，其中以 201126004 焊料分別接合靶、支持板、間隔件β 本發明又提供： 5) 如上述1)至4)中任一 ^ & Α ^ k 之靶支持板組裝體，其中， 救鍍耙為銦、錫、鋁、銅、组 或該等之合金或氧化物； 錦#釘 '嫣、姥， 6) 如上述1)至5)中任一 A . h 之乾支持板組裝體，其中間 隔件為m纟目或以 ，、Τ「Ί , L x 寺為主成分之合金； 7) 如上述1)至6)中任一項夕^ ^ m Λ{. ^ 項之靶支持板組裝體，其中最 厚4位之靶的厚度、與薄部位 、 固定； 心乾及間隔件的合計厚度為 本發明又提供： 8) 如上述1)至7)中任一 相料μ ’任項之靶支持板組裝體，其中， 相對於靶之長度方向中 、線，靶為不對稱； 9) 如上述1)至8)中任一 持板之厚度固定的平板狀板；Μ持板組裝體，其為支 僅支I:之上長述二至8)中卜^ 厚卢之邊二 兩端部的厚度較其他厚度薄，且於 厗度之邊界具有段差。 :發明之乾支持板組裝體具有以下優異之效果：可延 之=之哥命，並且在橫跨濺鑛初期及濺鑛過程中可使膜 之均句性(膜厚之均-性)良好，且粒子發生較少。、 進而具有以下效果：即便存在 化之賤姓差異，亦可對 種類所致之變 用效率乾。 了對應固有之乾減钱而容易地製造高使 8 201126004 【實施方式】 本發明係磁控錢链用把支持板組裝體，把可應用矩 形、圓形、橢圓形等各種靶，形狀並無特別限定。磁控濺 鍍中，為了提高濺鍍效率，而配置有配置於靶背面之磁體， 依磁體之配置或磁力線之強度而產生受到強烈濺蝕之部分 及未受到濺触之部分。 雖然其依賴於濺鍍裝置，但靶支持板組裝體必須具有 可與其相對應、可穩定㈣鍵、能更均句地獲得膜之均句 性之構造。 但是’作為基本構造，需 背面之磁體之距離及靶之濺蝕 距離分別加以固定。 另一方面，如上所述，雖 及未梵到減钮之部分，但受到 哥命。 要將之濺蝕面與配置於靶 面與和乾相對向之基板面的 會產生受到強烈濺蝕之部分 強烈濺蝕之部位決定著靶之 疋此種情況下，亦要求必須不斷提高靶整體之 用政率。+ 之部位。、曰 前之濺鍍靶增加靶之受到強烈濺蝕 因1牲/旦是’此種情形下由於_基板間之距離不固定， 因:'是在濺錢初期存在膜之均句性不穩定之問題。 厚之方1匕’本案發明中，靶以因濺鍍而受到濺蝕之部位變 B夺，較^ ;支持板面側形成厚度發生變化之凹凸形狀。此 壁部分導要的疋於支持板與具有凹凸形狀之乾間之乾薄 入由導電性材料所構成的間隔件。間隔件之材 201126004 質’若使用與支持板同種者，則密合性上不會有特別問題， 又’冷卻效率亦為同等，因此可說是較佳之材料。 先前，於靶之下面存在凹凸之情形時，使支持板之上 側之面形成與其相對應之凹凸（倒凹凸）。但是，此種情況存201126004 VI. Description of the Invention: [Technical Field] The present invention provides - (iv) a support plate assembly which can extend the life of the dry process and make the uniformity of the film in the process of splashing (the uniformity of the film thickness) It is good, and even if there is a difference between (4) and ((10) just due to the type of dry material, it is easy to manufacture high efficiency in response to the inherent surname. [Prior Art] The film forming method of (4) can be widely used for manufacturing various electronic and electrical parts. The splashing method uses the following principle: an anode is formed and a cathode is used as a cathode, and an electric field is generated by applying a voltage between the substrate materials in an inert gas atmosphere, and the ionized electrons collide with the inert gas to form an electric field. Plasma, the cation in the plasma; ^ 刼 ions collide with the surface of the target and collide with the target to form an atom': the atoms are attached to the surface of the substrate to form a film. Mig/刖 plating is mostly used as a method called so-called magnetron destruction. The magnetic control method is a method in which a magnet is placed on the back side of the dry side to make the dry surface generate a magnetic field perpendicular to the electric field to perform the ore-de-mining. The following characteristics are obtained: in this positive=electromagnetic field space, stabilization of electropolymerization can be achieved. High density, which increases the rate of splashing. 〃 Usually, the magnetic controller is used to capture electrons in a magnetic field and effectively ionize the money-reducing gas. Because of the structure or type of the magnet, the conditions of the ore reduction, the type of the target splashing device, etc., The intrusion of silver (cracking) has a pound of $ @ '贱贱不均. It is not limited to the magnetron plating method, and is the same in 201126004 other sputtering methods. It is necessary to replace the new one with the deepest level of work reaching the limit of reaching the end of life. Usually dry to form a flat or cylindrical shape. 2. If it is partially splashed, it will also cause uneven sputtering, and the uniformity of the film (the uniformity of the film thickness) will deteriorate. Furthermore, regardless of whether or not the target remains 堉 X ′, the end of life will be ushered in. It is the case that during the target life, 丄, +丄 ^ is determined by the uniformity of the film (the uniformity of the film thickness) or the step in the film forming process, and the management of the loss rate is determined. At this time, if the β-Hai target is used for the 0th item, the value will exceed the allowable value, and even if the target has a thickness, it is necessary to replace the new target. That is, the life of the target is shorter than originally. Therefore, various attempts have been made in the aspect of the sputter surface of the target, the structure of the support plate, and the structure of the assembly of the support plate and the support plate. For example, in the following Patent Document 1, it is proposed that the multi-segment light of a rectangular parallelepiped is in the presence of high and low lambs in the segmented target subjected to sputtering, and that the target is formed from a lighter surface having a lower height to the lower surface. . Therefore, the distance between the sputter surface of the ^ ^ ^ ^ ^ ^ ^ ^ ^ τ 粑 and the substrate and the distance between the sputtered surface and the magnet disposed on the surface of the wire f are uneven, so there is a problem of uneven sputtering at the initial stage of sputtering. . Patent Document 2 listed below proposes that the support plate is formed into a four-type type, and the support plate is placed on the support plate (4). When the joint is joined, the end portion is dried in order to easily remove the bonding agent. Dry - support board assembly. At this time, there is a problem that since the purpose is only to make the bonding agent easy to remove, the shape control of the target corresponding to the sputtering cannot be performed, and since the supporting plate has a convex shape of a fixed shape, it is not versatile. 201126004 Patent Document 3 below proposes research on the tilting mode of the money clock and the direct holding board. In this case, in order to prevent the deviation of the direction of gravity: the shape of the shape of the convex shape on the convex shape is not specifically studied for the use efficiency of the target (utilization efficiency), and Perform the shape control of #(四)#. Further, the support board also has a problem of having a versatility due to its specific shape. The following Patent Document 4 discloses research on improving the use efficiency of $. Thus, the profile of the face is formed as a reversed font. At this time, it is a problem. Since the initial splash surface is uneven with the substrate and the magnet disposed on the dry back side, there is a problem that the particles flying during the antimony ore are irregular (irregular) from the initial stage to the middle stage. In the following Patent Document 5, it is proposed that the bottom of the dry surface is distorted, and a shape is formed on the upper surface of the support plate so as to overlap the bottom surface of the target. At this time, although the use efficiency of the target is considered, since the target and the support plate each have a specific shape, there is a problem that the production is complicated and the cost is increased, and since the support plate has a specific shape, there is a problem that it is not versatile. In the following Patent Document 6, it is proposed that the disk-shaped target is also a disk-shaped target, and the support plate is also disk-shaped, and the positioning of the disk can be visually observed to form irregularities along the circumference of the disk. Since both the dry and the support plates have a specific shape, there are cases where the production is complicated and the cost is increased (4), and since the support plate has a special shape, there is a problem that it is not versatile. The following Patent Document 7+, as shown in Fig. 3 (4) or (c), is also effective in "increasing the target thickness on the surface to be plated". However, it is pointed out that such a shape (the initial splash surface is not parallel to the substrate and the magnet disposed on the back side of the target) is a problem in which the flying particles become irregular (irregular) during sputtering. That is, even if the use efficiency is high, it is expected that there is a problem that the film formation speed in the target is largely changed, the arc generation is frequently generated, and the step loss rate is high. Further, in Patent Document 7, there is an embodiment in which: in the drawings (a), (b), and (c) of FIG. 3, the dry i is not joined to the water-cooled plate 2 but is held by the holder lb. 1 S] is used for water cooling & In the case of this method, there is the following problem S: In the Tauman material having the thermal conductivity of #IT0, the adhesion of the water-cooled plate (support plate) to the holder is not sufficiently cooled, and the cooling is insufficient. The probability of a problem with target rupture is increased. According to the above, there are the following problems in the previous sputtering target: no attempt has been made in the following viewpoints: the use efficiency of the dry is high, and it can be uniform (4) from the initial plating, and it is easy to be in a simple form. Make and support boards. Further, there are disadvantages such as the problem of generating an arc. Patent Document 1: Patent Document 2: Patent Document 3: Patent Document 4: Patent Document 5: Patent Document 6: Patent Document 7: Japanese Patent No. 3760652, Japanese Patent Laid-Open No. 2009-57598, JP-A-2005-200682 In the present invention, the present invention is based on the above-mentioned description of the above-mentioned Japanese Patent Publication No. 2007- 245, 217, pp. The problem or shortcoming is completed, and mentions 201126004 for a uniformity (uniformity of film thickness) of the film in the initial stage of the stalk and during the sputtering process, and the particle generation is less, and the life of the target is longer. Target, manufacturing method and dry support plate. In order to solve the above problems, the inventors of the present invention have focused on the shape of a target for sputtering and a support plate supporting the same, and have obtained the knowledge that a target shape previously set to sputtering is used to perform sputtering using the target. The uniformity of the sputtered film (the uniformity of the film thickness) is good, and the particle generation is small, thereby prolonging the life of the target. Further, the "high use efficiency target" used in the present specification means a target having a shape expected to be sputtered as described above. The present invention is provided based on the above knowledge: and a dry support plate assembly, which is a magnetron splashing wire support plate assembly, characterized in that: a splash surface of the target and a magnet disposed on the back surface of the target and the target pair The distance to the substrate surface is fixed, and the target is thickened by sputtering, and the thickness of the surface is changed. The support plate has a concave-convex shape in which the thickness changes, and the support plate and the concave-shaped shape are interposed. The thin-walled portion is provided with a spacer composed of a conductive material; the present invention further provides: 2) a dry support plate assembly as in the above 1), in which the bottom is at the bottom of both sides of the light length direction The splash surface of the target of the splash is 0.5 mm, and the edge of both sides of the target and the bottom of the target are provided with a dimple between the joint surface of the support plate and the support surface of the support plate; The target support plate assembly of the above-mentioned 丨) or 2), wherein the target is a split target of 2 or more; 4) the target support plate assembly of any one of the above Π $ h / ) to 3), wherein Bonding target, support plate, spacer β with 201126004 solder, respectively Provided that: 5) a target support plate assembly according to any one of the above 1) to 4), wherein the buck is: indium, tin, aluminum, copper, group or alloy or oxide thereof ;锦#钉'嫣,姥, 6) A dry support plate assembly of any of the above 1) to 5), wherein the spacer is m纟 or ,, Τ"Ί, L x寺 is The alloy of the main component; 7) The target support plate assembly of any one of the above 1) to 6), wherein the thickness of the target of the thickest 4 positions is thin and fixed; The total thickness of the stem and the spacer is further provided by the present invention: 8) a target support plate assembly according to any one of the above items 1) to 7), wherein the line is aligned with respect to the length of the target The target is asymmetrical; 9) a flat plate having a fixed thickness of any one of the above 1) to 8); a support plate assembly, which is a branch only I: above the length of two to 8) The thickness of the two ends of the edge of the thick lu is thinner than the other thicknesses, and has a step difference at the boundary of the twist. The dry support plate assembly of the invention has the following excellent effects: the deferred = the fate, and Across In the initial stage of the mine and in the process of splashing, the uniformity of the film (the uniformity of the film thickness) is good, and the particles are less likely to occur. Further, the effect is the same: even if there is a difference in the surname, it may be caused by the species. It is easy to manufacture high in accordance with the inherent dry money reduction. 8 201126004 [Embodiment] The present invention relates to a support plate assembly for a magnetic control money chain, which can be applied to a rectangular shape, a circular shape, an elliptical shape, or the like. The shape of each of the targets is not particularly limited. In the magnetron sputtering, in order to improve the sputtering efficiency, a magnet disposed on the back surface of the target is disposed, and a portion that is strongly splashed depending on the arrangement of the magnet or the strength of the magnetic field line is not received. Part of the splash. Although it depends on the sputtering apparatus, the target supporting plate assembly must have a structure which can correspond to the corresponding (four) key and can obtain the uniformity of the film more uniformly. However, as a basic structure, the distance between the magnets on the back side and the splash distance of the target are fixed. On the other hand, as mentioned above, although it is not part of the reduction button, it is subject to a fate. It is also necessary to continuously improve the target as a result of the splash surface and the portion of the substrate surface that is disposed opposite to the target surface and the stem that is strongly splashed. Use political rate. The part of +. The sputtering target in front of the sputum increases the target's strong erosion due to 1 animal/denier. 'In this case, the distance between the substrates is not fixed, because: 'is the uniformity of the film at the beginning of the splash. The problem. In the invention of the present invention, the target is splashed by the sputtering, and the unevenness of the thickness is changed on the support side. The wall portion is guided by a gap between the support plate and the stem having the concavo-convex shape and is formed by a spacer made of a conductive material. Material of the spacer 201126004 If the same kind as the support plate is used, there is no particular problem in the adhesion, and the cooling efficiency is also equal, so it can be said to be a preferable material. Previously, in the case where irregularities were present under the target, the surface on the upper side of the support plate was formed to have irregularities (back unevenness) corresponding thereto. However, this situation exists
在支持板之製作變得非常複雜之問題。但本案發明中，Z 於僅導入間隔件，因此具有可完全消除支持板製作上之 雜性的較大效果。 $ 乍看似乎是支持板之變形，但先前不存在此種構造之 靶支持板組裝體。其原因認為是體認到乾與支持板必須為 -體。然而，本案發明根據大量之實驗，藉由導入間隔件 而可解決上述問顯。5 ，士政ηα ^ 又本發明之靶以因濺鍍而受到濺蝕 之部位變厚之方# Μ ± Ζ ^ 支持板面側形成厚度發生變化之凹凸 形狀，由於濺鍍初期之濺 凸 X· »又® 7兩十面形狀，因 濺鍍初期至中期，膜 獲付自 膜之均勻性較為均一之效果。 又’自中期至末期，與於璐 可獲得膜之均勻性之亞… > 成凹凸者相比，亦 性之心、化較緩慢的結 靶於自機鍍初期之階段 本案發明 成凹凸者相比，膜之妁6 月為止，與於靶之濺蝕面形 膜之均勻性特別良好。 又，本發明較理想的是. 之長度方向之兩側底部，離成支持板組裝體中，於乾 面0.5 mm以上之办思 離文到最終濺蝕之靶的濺蝕 上之位置，向靶之長 部’於與靶之下矣 穴度方向之兩側邊部及靶底 其在製作乾支持板組二=合面間’形成凹痕部。 接於支持被上之操作 面’會產生將輕载置、焊 谷易之效果。結果，靶支持板組The production of support boards has become very complicated. However, in the invention of the present invention, Z is only introduced into the spacer, so that it has a large effect of completely eliminating the maturity of the support plate. At first glance, it seems to be a deformation of the support plate, but the target support plate assembly of this configuration was not previously available. The reason is that it is recognized that the dry and support plates must be body-shaped. However, the present invention solves the above problems by introducing a spacer based on a large number of experiments. 5, Shizheng ηα ^ Further, the target of the present invention is thickened by the portion splashed by sputtering. # Μ ± Ζ ^ Supports the unevenness of the thickness of the plate surface, due to the sputtering X at the initial stage of sputtering · ··® 7 two-sided shape, due to the uniformity of the uniformity of the film from the initial to the middle of the sputtering. And from the middle to the end, and the uniformity of the film can be obtained in Yuji... > compared with the bumps, the heart is also slower, and the slower target is in the early stage of self-electroplating. In comparison, the uniformity of the masked surface film with respect to the target was particularly good as of June. Further, the present invention is preferably a bottom portion on both sides in the longitudinal direction, which is separated from the support plate assembly, and the position on the dry surface of 0.5 mm or more to the splash of the final splash target is The long part of the target forms a dimple on both sides of the target and the target bottom under the target, and between the dry support plate group and the second surface. In order to support the operation of the upper surface, it will produce the effect of light loading and welding. Result, target support plate set
S 201126004 裝體採用該構造，藉此难鑛成膜不會成為障礙。 該乾支持板組裝體亦可使乾成為2以 此可製作長條之乾支持板組裝體。又，有容易藉二： ,. 、板、間隔件之優點，本案發明係提供該靶 支持板組裝體者。作為焊料，並盔 靶 低熔點之焊錫材料。 ’可使用銦等 於本發明之靶支持板組裝體中’濺鍍靶可適合使用 銦、錫、銘、銅、紐、叙、嫂 之人、 了、鎢、铑、或該等 ==化物等。特別是適合製作IT〇(銦與錫之 專顯不材料用乾。又，間隔件若為導電性材料1可應用， 特別理想的是銅、紹、鈦、n該等之ϋ。 又，該間隔件亦可:如上所述般使用與支持板同質 =了為了增加間隔件與乾或支持板之密合性或冷卻效 等亦二進：鑛敷或離子電鑛等基底處理。本案發明包含 該4。間隔件亦具有防止乾材於支持板上傾斜之功能。 乾支持板組裝體可使最厚部位之乾厚度與較薄部位之 乾及間隔件的合計厚度相同。 :原因係可準備尺寸不同的多個較薄之 :::調：…本發明可容易地製作相對於…邊方 因二：二為不對稱…持板組裝體。其原因亦同， 因為可準備尺寸不同的多個間隔件，藉此進行 其為本案發明之較大特徵。 〜° μf 士匕其較大之優點為可應用於支持板之厚度固定的平 板狀板，無須嘗試改變支持板之形狀。χ，當然亦可使用 201126004 僅支持板之長度方向之兩端邻厘 m且古雨W厚度較其他厚度薄、於厚度 之邊界具有段差之程度的單紬 早义支持板。本案發明包括該等。 於製造本發明之濺蝕輪廓. 栝°亥# 糨郿靶（Er0S10n pr〇filed ta 時’可預先濺錢平板狀之知，， ^ 靶调查此時之濺蝕形狀及深度， 據此調節靶之厚度。 藉此，即便存在因乾材料之種類所致之變化Hi差 異’亦可對應固有之_而容易地製造高使用效率乾。 本發明之乾支持板組裝體具有製作極為容易，並且可 延長㈣之壽命的優點。又具有以下效果：使得在橫跨滅 鑛初期及雜過程中膜之均句性（膜厚之均—性）良好，又粒 子發生較少。it而具有以下較大之效果：即便存在因靶材 料之種類所致之變化之㈣差異，亦可對應固有之謙 而容易地製造高使用效率乾。 實施例 繼而，基於實施例說明本發明。再者，以下實施例係 為使發明谷易理解而採用者，本發明並不限定於該等實施 例。即，基於本發明之技術思想之其他例或變形當然包括 在本發明中。 (實施例1) 使用圖1所示之銅製支持板與靶，靶係使用IT〇(銦錫 氧化物）。圖1係表示靶支持板組裝體之平面圖（一部分）、C —C剖面圖、A — Α剖面圖、Β _ Β剖面圖。如圖1所示般， 實施例1之靶支持板組裝體之支持板於平面上為矩形（長方 形），靶之長度方向之兩端部為橢圓形。此時，使用分割起。S 201126004 This structure is adopted for the package, whereby film formation by difficult minerals does not become an obstacle. The dry support plate assembly can also be made into a dry support plate assembly which can be made into a long strip. Moreover, it is easy to borrow the advantages of two, . . . , plates, and spacers, and the invention of the present invention provides the target support plate assembly. As a solder, and as a helmet, a low-melting solder material. 'Indium can be used in the target support plate assembly of the present invention. The sputtering target can be suitably used for indium, tin, indium, copper, New Zealand, Syria, 嫂, 、, tungsten, 铑, or such == . In particular, it is suitable for the production of IT〇 (indium and tin are not used for materials. In addition, if the spacer is made of conductive material 1, it is particularly desirable to use copper, sho, titanium, n, etc.) The spacer may also be used in the same manner as the support plate as described above. In order to increase the adhesion between the spacer and the dry or support plate or the cooling effect, etc., the substrate treatment such as mineral deposit or ion ore is included. The spacer member also has the function of preventing the dry material from tilting on the support plate. The dry support plate assembly can make the dry thickness of the thickest portion the same as the dry thickness of the thinner portion and the total thickness of the spacer. A plurality of thinner ones of different sizes::: tune: ... the present invention can be easily fabricated with respect to the side of the two sides: two is an asymmetrical ... plate assembly. The reason is the same, because the size can be prepared differently A spacer member, thereby making it a large feature of the invention of the present invention. ~° μf The larger advantage of the girth is that it can be applied to a flat plate having a fixed thickness of the support plate without attempting to change the shape of the support plate. Of course, you can also use 201126004 only support board The single-twist early support plate whose thickness is adjacent to each other in the length direction and the thickness of the ancient rain W is thinner than other thicknesses and has a step difference at the boundary of the thickness. The invention includes the above. The sputtering profile of the present invention is manufactured.栝°海# 糨郿 target (Er0S10n pr〇filed ta 'can be splashed in front of the flat shape, ^ target to investigate the shape and depth of the splash at this time, according to which the thickness of the target is adjusted. The difference in the difference in the type of dry material, Hi difference, can also easily produce a high efficiency of use. The dry support plate assembly of the present invention has the advantages of being extremely easy to manufacture and prolonging the life of (4). The following effects: the uniformity of the film (the uniformity of the film thickness) is good in the initial stage of the ore-breaking process, and the particle generation is less. It has the following large effect: even if there is a target material The difference in (4) due to the change in the kind can also be made to be efficient and effective in the production of high efficiency. Embodiments Next, the present invention will be described based on the embodiments. Further, the following examples are intended to make the invention easy to understand. The present invention is not limited to the embodiments, that is, other examples or modifications based on the technical idea of the present invention are of course included in the present invention. (Example 1) Using a copper support plate and a target shown in Fig. 1 The target system uses IT〇 (indium tin oxide). Figure 1 shows a plan view (partial) of the target support plate assembly, a C-C section view, an A-Α section view, and a Β_Β section view. As shown, the support plate of the target support plate assembly of the first embodiment has a rectangular shape (rectangular shape) on the plane, and both ends in the longitudinal direction of the target have an elliptical shape.
S 12 201126004 該分割乾之長度方向之 上為左右不 對稱。 |抵。卩於長度方向 支持板係使用使長度方向之兩側薄為 有段差5.0 mm之支持板。於誃 ·，， · mm者、即具 放入銅製之厚4.5 mm及原^又^、即支持板之較薄側 入序）〇 mm之間陆Α # 分別接合靶、間隔件、古 ’糟由銦焊锡 又得板。於靶之堉命π 應其厚度（薄度），而於_支 厚度不同時，相對 件。 、$插入適合厚度之間隔 使用該ITO(銦锡氧化物 於雜功率為10_至1600 kwh仃磁控濺鍍。賤鑛條件係 用前重量為18.%，使^下進行賤鑛。乾1片之使 g使用後之重量為u 2 用效率為40%，盥下诚m β ^ g ，、尨果，使 一述所不之比較例相比為高效率。將| 仆r 效辜不會因乾材料之種類而發生較大變 ’因此以下使用相同的1丁〇靶進行試驗。 為了觀察濺鍍特性，而調杳 果示於表2。若將表2之資# 速度之變動。將其結 ^ 表2之貝科不於圖中，則如圖2所示。以 、使用開始時設為100時之相對比表示，於累計功率量為 1600 kWHr下亦維持95。 难㈣性係調查電弧產生次數。將其結果示於表 3。若將表3之資料示於圖中，則如圖3所示。於使用開始 ^為〇’隨著持續軸*有逐漸增加之傾向，但可獲得下述 結果·於累計功率量為觸kWHr下亦為87次左右、且電 弧產生次數較低。 進而，調查步驟之損失率。該步驟損失率係因例如於 13 201126004 ITO濺鍍中所產生之大小為20 # m以上之ITO粒子而引起 的LCD面板之不良率。將其結果示於表4。又，若將表4 之資料示於圖中，則如圖4所示。根據該結果明顯可獲得 下述結果：於累計功率量為1600 kWHr下亦為0.28左右、 且步驟損失率較低。 根據以上結果，與後述比較例相比，可獲得任一情形 下均優異之結果。 [表1] 實施例及比較例之使用效率 使用前重量(kg) 使用後重量(kg) 使用重量(kg) 使用效率(％) 實施例1 18.8 11.2 7.6 40% 比較例1 25.2 17.7 7.5 30% 比較例2 23.0 15.6 7.4 32% 比較例3 23.0 15.5 7.5 33% 實施例2 18.8 11.3 7.5 40% 比較例4 37.3 29.8 7.5 20% 比較例5 34.5 27.0 7.5 22% 比較例6 34.5 26.9 7.6 22% [表2] 實施例及比較例之濺鍍特性 a.成膜速度之變動（將/ ί吏用開始時設為 1 00時之相對比） 累計功率量(kWHr) 0 400 800 1200 1600 實施例1 100 99 98 97 95 比較例1 100 99 97 95 93 比較例2 100 97 93 90 85 比較例3 100 97 94 90 86 實施例2 100 99 96 95 94 比較例4 100 98 96 94 93 比較例5 100 97 93 88 83 比較例6 100 96 93 89 84 14 201126004 [表3] 生次數 量(kWHr)S 12 201126004 The length of the split stem is left and right asymmetrical. | Arrival.卩In the length direction The support plate is used to make the sides of the length direction thin as a support plate with a step difference of 5.0 mm.誃 ,,, · mm, that is, the thickness of the copper is 4.5 mm and the original ^^^, that is, the thinner side of the support plate.) 〇mm between the landΑ# respectively, the target, the spacer, the ancient ' The bad is made of indium solder and has a plate. The target π π should be its thickness (thinness), and when the _ branch thickness is different, the relative parts. $ Insert the appropriate thickness to use the ITO (indium tin oxide in the power of 10 to 1600 kwh 仃 magnetron sputtering. The strontium ore condition is 18.% before use, so that the slag is dried. The weight of one piece of g after use is u 2 with an efficiency of 40%, and the undergiveness of m ^ ^ ^ ^ , and the result of the result is a high efficiency compared with the comparative example. It does not change greatly depending on the type of dry material. Therefore, the same test is carried out using the same target. In order to observe the sputtering characteristics, the results are shown in Table 2. If the speed of Table 2 is changed, The results are as shown in Fig. 2. The relative ratio when the start is set to 100 is also maintained at 95. The cumulative power is 1600 kWHr. The number of arc generations is investigated by the sex system. The results are shown in Table 3. If the data in Table 3 is shown in the figure, it is shown in Fig. 3. At the beginning of use, ^ is 〇 'the tendency to gradually increase with the continuous axis* However, the following results were obtained. The cumulative power amount was also about 87 times under the touch kWHr, and the number of arc generations was low. Further, the investigation procedure was The rate of loss in this step is the defect rate of the LCD panel caused by, for example, ITO particles having a size of 20 #m or more generated in ITO sputtering on 13 201126004. The results are shown in Table 4. The data in Table 4 is shown in the figure, as shown in Fig. 4. According to the results, the following results are clearly obtained: the cumulative power amount is also about 0.28 at 1600 kWHr, and the step loss rate is low. The results are excellent in any case as compared with the comparative examples described later. [Table 1] The use efficiency of the examples and the comparative examples The weight before use (kg) The weight after use (kg) The use weight (kg) The use efficiency ( %) Example 1 18.8 11.2 7.6 40% Comparative Example 1 25.2 17.7 7.5 30% Comparative Example 2 23.0 15.6 7.4 32% Comparative Example 3 23.0 15.5 7.5 33% Example 2 18.8 11.3 7.5 40% Comparative Example 4 37.3 29.8 7.5 20% Comparative Example 5 34.5 27.0 7.5 22% Comparative Example 6 34.5 26.9 7.6 22% [Table 2] Sputtering characteristics of Examples and Comparative Examples a. Variation of film forming speed (When / 吏 is used, it is set to 100 00 at the beginning) Relative ratio) cumulative power (kWHr) 0 400 800 1200 1600 Example 1 100 9 9 98 97 95 Comparative Example 1 100 99 97 95 93 Comparative Example 2 100 97 93 90 85 Comparative Example 3 100 97 94 90 86 Example 2 100 99 96 95 94 Comparative Example 4 100 98 96 94 93 Comparative Example 5 100 97 93 88 83 Comparative Example 6 100 96 93 89 84 14 201126004 [Table 3] Number of births (kWHr)
[表4][Table 4]
(比較例1) 使用圖5所示之銅製支持板與乾，與實施例】同樣， 乾係使用ΙΤ〇(銦錫氧化物）。圖5係表示乾支持板組裝體之 平面圖（一部分）、C—C剖面圖、a— a判；® η Α刮面圖、Β — Β剖面 圖。如該圖5所示，比較例1之乾支梓拓 %叉符扳組裝體之支持板 於平面上為矩形（長方形），靶之長度方向 . 又乃向之兩端部為橢圓 形。此時，使用分割靶。支持板係使用使 仅度方向之兩側 溥為5.0 mm左右者、即具有段差5.0 mm之支持板 與該段差部相對應，即於支持板之較薄如# 寸叫炅用厚5 mm 15 201126004 兩^之乾厚度為115 mm，存在於中央之乾厚度為 m以該等乾為同一平面之方式配置分割靶。並且， 藉由銦焊錫將該等與支持板直接接合。兩端部之分割把以 外係厚6.5 mm之乾。 使用4 ITO(銦錫氧化物）靶支持板組裝體進行磁控濺 鑛賤鑛條件係於濺鍍功率為1〇請至i6〇〇kwh下進 鍍。 靶1片之使用前重量為25·2 kg，使用後之重量為17 7 g其、。果，使用效率為30〇/〇，效率低於上述實施例1。同 樣將其結果示於表1。 ▲為了觀察濺鍵特性，與實施例i同樣，調查成膜速度 之I動。將其結果示於纟2及圖2。以將使用開始時設為 100時之相對比表示，於累計功率量為1_ kWHr下為, 與實施例"目比稍降低。又，濺鍍特性係調查電弧產生次 數。將其結果示於表3及圖^使用開 ⑽而有逐漸增加之傾向，於累計功率量為議 為9〇次’電弧產生次數與實施你"相比稍增加。 進而’調查步驟之損失率。將其結果示於表4及圖〇 其、”。果’於累計功率量為16〇〇 kWHr下為m，步驟損失 率稍變高。根據以上結果明顯可獲得下述結果：與實施例丄 相比，任一情形下均較差。 (比較例2) 使用圖6所示之銅製支持板與把，與實施例i同樣， 靶係使用ITO(銦錫氧化物圖6係表示靶支持板組裝體之(Comparative Example 1) Using a copper support plate and a dry layer shown in Fig. 5, ruthenium (indium tin oxide) was used in the same manner as in the examples. Fig. 5 is a plan view (part), a C-C sectional view, a-a judgment, a η Α Α 面, and a Β - Β sectional view of the dry support plate assembly. As shown in Fig. 5, the support plate of the dry support yoke of the comparative example 1 is rectangular (rectangular) on the plane, and the longitudinal direction of the target is elliptical at both ends. At this time, the split target is used. The support plate is used such that the support plate with a step of 5.0 mm on both sides of the only direction corresponds to the difference between the segments, that is, the support plate is thinner than the thickness of the support plate. 201126004 The dry thickness of the two ^ is 115 mm, and the thickness of the center is m. The split target is arranged such that the dry is the same plane. And, these are directly bonded to the support plate by indium solder. The split ends are 6.5 mm thick. Magnetron sputtering using a 4 ITO (indium tin oxide) target support plate assembly is performed at a sputtering power of 1 〇 to i6〇〇kwh. The weight of the target 1 tablet was 25.2 kg before use, and the weight after use was 17 7 g. As a result, the use efficiency was 30 〇/〇, and the efficiency was lower than that of the above Example 1. The results are also shown in Table 1. ▲ In order to observe the splash bond characteristics, the I movement of the film formation speed was examined in the same manner as in the example i. The results are shown in Fig. 2 and Fig. 2. In the case of the relative ratio when the start of use is set to 100, the cumulative power amount is 1 kWHr, which is slightly lower than the example " Further, the sputtering characteristics are used to investigate the number of arc generations. The results are shown in Table 3 and Fig. 2, and there is a tendency to gradually increase using the opening (10), and the cumulative power amount is considered to be 9 times. The number of arc generations is slightly higher than that of the implementation. Furthermore, the loss rate of the investigation step. The results are shown in Table 4 and Fig. 2, and the result is that the cumulative power amount is 16 kWhHr, and the step loss rate is slightly higher. According to the above results, the following results are clearly obtained: In comparison, it was inferior in either case. (Comparative Example 2) Using the copper support plate and the handle shown in Fig. 6, the target system was made of ITO (indium tin oxide). Figure 6 shows the target support plate assembly. Body
S 16 201126004 平面圖(-部分)、C-C剖面圖、A—A剖面圖、b—b剖面 圖。如該圖6所示，比較例2之知古姓Α # π敉扒2怎祀支持板組裝體之支持板 於平面上為矩形（長方形），把之長度方向之兩端部為㈣ 形。此時使用分割^支持板係使用使長度方向之兩側薄 為5.0 mm者、即具有段差5 mm之支持板。 與該段差部相對應，即於支持板較薄之側使用厚5麵 之靶。對於兩邊部之耙，與其他鄰接之靶存在高低差，於 最高部為11.5 _，並配置具有傾斜至與鄰接之^賴把 相同高度之上面之分㈣’ #由銦焊錫將該等與支持板直 接接合。 使用ITO(鋼錫氧化物）乾支持板組裝體進行磁控滅 鑛。濺鍵條件係於賤鍍功率為10kwiL 16()()kwh下進㈣ 鍍。 靶1片之使用前重量為23 0 kg，使用後之重量為15 6 kg其釔果’使用效率為32% ’效率低於上述實施例1。同 樣將其結果示於表1。' 為了觀察濺鑛特性，與實施例1同樣，調查成膜速度 之變動。將其結果示於纟2及圖2。以將使用開始時設為 100時之相對比表不’於累計功率量為^繼kWHr下為85， 與實施例1相比明顯降低。 又，賤鑛特性係調查電弧產生次數。將其結果示於表3 及圖3使用開始時為〇，隨著持續減鑛而有逐漸增加之傾 向於累片功率量為16〇〇 kWHr下為⑷：欠電派產生次 數與實施例1相比明顯增加。 17 201126004 進而，調查步驟之損失率。將其結果示於表4及圖4。 其結果，於累計功率量為1600 kWHr下為〇 63，步驟損失 率明顯升高。 根據以上結果明顯可獲得下述結果：與實施例㈠目比， 任一情形下均明顯較差。 (比較例3) 使用圖7所示之銅製支持板與乾，與實施例i同樣， 把係使用⑽(銦錫氧化物）。圖7係表示乾支持板組裝體之 平面圖（一部分）、C—C剖面圖、A—Α剖面圖、β—Β剖面 圖。如圖7所示，比較例3之乾支持板組裝體之支持板於 平面上為矩形(長方形)，靶之長度方向之兩端部為橢圓形。 此時，使用分㈣。支持板係使用使長度方向之兩側薄為 5.0 mm者、即具有段差5 〇 mm之支持板。 與該段差部相對應’即於支持板之較薄側使用厚5.0 麵之靶。對於兩邊部之靶’與其他鄰接之靶存在高低差， 於最高料U.5酿，並配置具有傾斜至與鄰接之Η咖 靶相同咼度之上面之分割靶，藉由銦焊錫將該等與支持板 直接接合。 此時’兩邊部之乾超過段差，如圖7所示，使其延伸 至中央部之靶。即，使其具有與厚度較薄之中央部的厚度 相同厚度之水平部分。 使用該ITO(銦錫氧化物）挺支持板組裝體進行磁控減 鑛。濺錄條件係於濺鍍功率為10請至160()kwh下進行減 鍍。S 16 201126004 Plan view (-part), C-C section view, A-A section view, b-b section view. As shown in Fig. 6, the support plate of the support plate assembly of the comparative example 2 is rectangular (rectangular) on the plane, and the both ends in the longitudinal direction are (four). In this case, the use of the split ^ support plate is such that the sides of the length direction are thinner than 5.0 mm, that is, the support plate having a step of 5 mm. Corresponding to the step, that is, a thick 5-sided target is used on the thinner side of the support plate. For the two sides, there is a height difference with other adjacent targets, which is 11.5 _ at the highest part, and is configured to have a slope that is equal to the upper part of the adjacent height (4)'. The plates are joined directly. The ITO (steel tin oxide) dry support plate assembly was used for magnetron destruction. Splash bond conditions are based on 贱 plating power of 10kwiL 16 () () kwh down (four) plating. The target 1 tablet had a weight of 23 kg before use, and the weight after use was 15 6 kg, and the result of use efficiency was 32%. The efficiency was lower than that of the above Example 1. The results are also shown in Table 1. In order to observe the sputtering characteristics, the change in the film formation speed was examined in the same manner as in the first embodiment. The results are shown in Fig. 2 and Fig. 2. The relative ratio when the start of use is set to 100 is not shown to be 85. The cumulative power amount is 85, which is significantly lower than that of the first embodiment. In addition, the characteristics of the antimony ore are to investigate the number of arc generations. The results are shown in Table 3 and Figure 3. The beginning of use is 〇, with increasing gradual increase, the gradual increase in the amount of power is 16 〇〇 kWHr (4): the number of undergather generations and Example 1 Compared to the obvious increase. 17 201126004 Further, investigate the loss rate of the steps. The results are shown in Table 4 and Figure 4. As a result, the cumulative power amount is 1600 63 at 1600 kWHr, and the step loss rate is remarkably increased. From the above results, the following results were clearly obtained: in comparison with the case (1), it was significantly inferior in either case. (Comparative Example 3) Using the copper support plate and the dry layer shown in Fig. 7, (10) (indium tin oxide) was used in the same manner as in the example i. Fig. 7 is a plan view (part), a C-C sectional view, an A-Α sectional view, and a β-Β sectional view of the dry support plate assembly. As shown in Fig. 7, the support plate of the dry support plate assembly of Comparative Example 3 has a rectangular shape (rectangular shape) on the plane, and both end portions in the longitudinal direction of the target have an elliptical shape. At this time, use the minute (four). The support plate uses a support plate having a thickness of 5.0 mm on both sides in the longitudinal direction, that is, a support plate having a step difference of 5 〇 mm. Corresponding to the step difference, that is, a target having a thickness of 5.0 faces is used on the thinner side of the support plate. For the target of the two sides, there is a difference between the target and other adjacent targets, and the highest material U.5 is brewed, and the split target having the same inclination as the adjacent 靶 靶 target is disposed, and the indium solder is used for the same. Directly engage the support board. At this time, the dryness of both sides exceeds the step, as shown in Fig. 7, so as to extend to the target of the central portion. Namely, it has a horizontal portion having the same thickness as the thickness of the central portion having a small thickness. The ITO (Indium Tin Oxide) support plate assembly was used for magnetron reduction. The splatter conditions are deplated at a sputtering power of 10 to 160 () kwh.
S 18 201126004 靶1片之使用前重量為23 〇 kg，使用後之重量為15 5 kg。其結果’使用效率為3 3 %，效率低於上述實施例1。同 樣，將其結果示於表i。 為了觀察濺鍍特性，與實施例丨同樣，調查成膜速度 之變動。將其結果示於表2及圖2。以將使用開始時設為 100時之相對比表示，於累計功率量為16〇〇kWHr下為86, 與實施例1相比明顯降低。 又，濺鍍特性係調查電弧產生次數。將其結果示於表3 及圖3。使用開始時為〇，隨著持續濺鍍而有逐漸增加之傾 向，於累計功率量為16〇〇 kWHr下為139次電弧產生次 數與實施例1相比明顯增加。 ，·薩而，凋查步驟之損失率。將其結果示於表4及圖4。 其結果’於累計功率量為16〇〇 kWHr下為〇59，步驟損失 率明顯升高。 根據以上結果明顯可獲得下述結果：與實施例1相比， 任一情形下均明顯較差。 (實施例2) 一使用圖8所不之銅製支持板與靶，靶係使用IT〇(銦錫 氧化物）。圖8係表示靶支持板組裝體之平面圖（一部分）、C C 面圖' a 一 Α剖面圖、Β _ Β剖面圖。如該圖8所示， 實施例2之乾支持板組裝體之支持板於平面上為矩形（長方 形），粗之長度方向之兩端部為橢圓形。此時，使用分割纪。 該分割乾之長度方向兩側部的底部與實施例丄同樣，於長 度方向為（凹凸形狀）左去不對稱。支持板係使用整面平坦之 19 201126004 支持板。 並且，長度方向兩側之乾係使用於支持板側具備* $ _及1.0 _之凹痕部的乾。並且，於該挺之凹痕部分別 放入銅製厚4·5_與厚5.〇mm之間隔件，藉由銦谭錫分 別接合乾、間隔件、支持板。無之厚度不同時，相對康其 厚度(薄度而於靶與支持板間插入適合厚度之間隔件：、 使用該ITO(銦錫氧化物）輕進行磁控賤鑛。滅鑛條件 於韻功率為lGkW_£ 16〇()kWh下進行濺鑛i片之、 用前重量為18.8kg，使用後之重量為ll 3kg。其結果使 用效率為概，效率高於比較例。將其結果示於表卜 為了觀察濺錄特性，同樣調查成膜速度之變動。將其 結果示於表2及圖2。以將使用開始時設為100時之相對比 表示，於累計功率量為16G()kWHr下亦維持9心 又，濺鍍特性係調查電弧產生次數。將其結果示於表3 及圖3。使用開始時為Q，隨著持續濺鍵而有逐漸增加之傾 向’並可獲得於累計功率量為16〇〇kWHr下亦為Μ次電 弧產生次數較低之結果。 進而’調查步驟之損失率。將其結果示於表4及圖卜 根據該結果明顯可獲得下述結果：於累計功率量為剩 刚Γ下亦為〇.3〇左右、步驟損失率較低。根據以上結果可 獲得與比較例相比’任一情形下均優異之結果。特別是於 靶之初期濺蝕面存在高低差者’不良率較高之傾向較強。 (比較例4) 使用圖9所示之銅製支持板與乾，與實施例2同樣， 20 1 201126004 靶係使用ITO(銦錫氧化物）。圖9係表示靶支持板組裝體之 平面圖（一部分）、C—C剖面圖、a— A剖面圖、B—B剖面 圖。如該圖9所示，比較例4之靶支持板組裝體之支持板 於平面上為矩形（長方形）’靶之長度方向之兩端部為橢圓 形。此時，使用分割乾。支持板係使用整面平坦之支持板。 並且’乾全部使用厚U.5 mm之靶。並且，藉由銦焊 錫分別將靶與支持板接合。 使用該ITO(銦錫氧化物）靶支持板組裝體進行磁控濺 鍍。濺鍍條件係於濺鍍功率10]^〜至16〇〇kwh下進行濺鍍。 乾1片之使用前重量為37_3 kg，使用後之重量為29 8 kg。其結果，使用效率為2〇。/0，效率低於上述實施例2。同 樣將其結果示於表1。 為了觀察濺鍍特性，與實施例2同樣，調查成膜速度 之變動。將其結果示於表2及圖2。以將使用開始時設為 1 〇〇時之相對比表示’於累計功率量為1 600 kWHr下為93， 與實施例2相比稍降低。 又’濺鍍特性係調查電弧產生次數。將其結果示於表3 及圖3。使用開始時為〇 ,隨著持續濺鍍而有逐漸增加之傾 向，於累計功率量為16〇〇kWHr下為93次，電弧產生次數 與實施例2相比稍增加。 進而’調查步驟之損失率。將其結果示於表4及圖4。 其結果’於累計功率量為16〇〇 kwHr下為〇 35，步驟損失 率升高。 根據以上結果明顯可獲得下述結果：與實施例2相比， ) 21 201126004 任一情形下均稍差。 (比較例5 ) 使用圖1 0所示之銅製支持板與乾，與實施例2同樣， 把係使用ITO(銦錫氧化物）。圖1〇係表示靶支持板組袭體 之平面圖（一部分）、C — C剖面圖、A — A剖面圖、B — B剖 面圖。如該圖1 〇所示，比較例5之乾支持板組裝體之支持 板於平面上為矩形（長方形），靶之長度方向之兩端部為橢圓 形。此時，使用分割靶。支持板係使用整面平坦之支持板。 並且，對於兩邊部之靶，與中央部之其他鄰接之乾存 在兩低差，於最高部為11.5 mm，並配置具有傾斜至與1〇 5 mm靶相同高度之上面之分割靶，藉由銦焊錫將該等與支持 板直接接合。 使用該ITO(銦錫氧化物）靶支持板組裝體進行磁控濺 鍍。濺鍍條件係於濺鍍功率為丨〇 kW至丨6〇〇 kWh下進行濺 鍍。 靶1片之使用前重量為34.5 kg :使用後之重量為27 〇 kg。其結果，使用效率為22%,效率低於上述實施例2。同 樣將其結果示於表1。 為了觀察濺鍍特性，與實施例2同樣，調查成膜速度 之變動。將其結果示於纟2及圖以將使用開始時設為 100時之相對比表示，於累計功率量為1600 kWHr下為83, 與實施例2相比明顯降低。 又’濺鐘特性係調查電弧產生次數。H结果示於表3 及圖3。使用開始時為G ’隨著持續⑽而有逐漸増加之傾S 18 201126004 The target 1 piece has a weight of 23 〇 kg before use and a weight of 15 5 kg after use. As a result, the use efficiency was 33%, and the efficiency was lower than that of the above Example 1. Similarly, the results are shown in Table i. In order to observe the sputtering characteristics, the film formation speed was investigated in the same manner as in Example 。. The results are shown in Table 2 and Figure 2. The relative ratio when the start of use was set to 100 was 86, which was 86 at the cumulative power amount of 16 〇〇 kWHr, which was significantly lower than that of the first embodiment. Moreover, the sputtering characteristics are the number of times the arc is generated. The results are shown in Table 3 and Figure 3. At the beginning of the use, 〇, with a gradual increase in inclination with continuous sputtering, the number of 139 arc generations at a cumulative power of 16 〇〇 kWHr was significantly increased as compared with Example 1. , Sa, and the loss rate of the steps. The results are shown in Table 4 and Figure 4. As a result, the cumulative power amount was 〇〇59 at 16 〇〇 kWHr, and the step loss rate was remarkably increased. From the above results, the following results were clearly obtained: compared with Example 1, it was significantly inferior in either case. (Example 2) A copper support plate and a target as shown in Fig. 8 were used, and IT 〇 (indium tin oxide) was used as the target system. Fig. 8 is a plan view (part) showing a target support plate assembly, a C C surface view 'a Α sectional view, and a Β _ Β sectional view. As shown in Fig. 8, the support plate of the dry support plate assembly of the second embodiment has a rectangular shape (long square shape) on the plane, and both end portions in the longitudinal direction of the thick shape are elliptical. At this time, use the division. The bottoms of the both sides in the longitudinal direction of the split dry are the same as the embodiment ,, and are left-asymmetric in the longitudinal direction (concavo-convex shape). The support board uses a flat surface. 2011 26004 Support board. Further, the stems on both sides in the longitudinal direction are used for the stems having the *$ _ and 1.0 _ dents on the support plate side. Further, a spacer having a thickness of 4·5 mm and a thickness of 5. mm was placed in each of the dent portions, and the dry, spacer, and support sheets were joined by indium tantalum. When there is no difference in thickness, the thickness is relatively thin (thinness is inserted into the spacer of suitable thickness between the target and the support plate: using the ITO (indium tin oxide) to lightly control the antimony ore. For lGkW_£16〇() kWh, the weight of the spoiled i piece is 18.8kg, and the weight after use is ll 3kg. The result is more efficient and the efficiency is higher than the comparative example. The results are shown in the table. In order to observe the smear characteristics, the film formation speed was also examined. The results are shown in Table 2 and Fig. 2. The relative ratio at the start of use is set to 100, and the cumulative power is 16 G() kWHr. The number of arcs is also checked by the sputtering characteristics. The results are shown in Table 3 and Figure 3. Q at the beginning of use, and the tendency to increase gradually with continuous splashing, and is available for cumulative power. The amount of 16 〇〇 kWHr is also the result of the lower number of times of the secondary arc generation. Further, the loss rate of the investigation step is shown in Table 4 and Figure. According to the results, the following results are clearly obtained: The amount is left and left, and it is also about 〇.3〇, step loss According to the above results, the results are excellent in any case compared with the comparative example. Especially in the initial stage of the target, there is a high tendency for the difference in the erosion surface. 4) Using the copper support plate and the dry material shown in Fig. 9, as in the second embodiment, 20 1 201126004 target system uses ITO (indium tin oxide). Fig. 9 shows a plan view (part) of the target support plate assembly, C - C sectional view, a - A sectional view, B - B sectional view. As shown in Fig. 9, the support plate of the target support plate assembly of Comparative Example 4 has a rectangular (rectangular) 'target length direction on the plane. The ends are elliptical. In this case, the split is used. The support plate uses a flat support plate. And the 'dry all uses a U.5 mm thick target. And the target and the support plate are respectively covered by indium solder. Bonding. The ITO (Indium Tin Oxide) target support plate assembly is used for magnetron sputtering. The sputtering conditions are sputtered at a sputtering power of 10]^~ to 16〇〇kwh. The weight is 37_3 kg, and the weight after use is 29 8 kg. As a result, the use efficiency is 2〇./0, the efficiency was lower than that of the above Example 2. The results are also shown in Table 1. In order to observe the sputtering characteristics, the film formation speed was examined in the same manner as in Example 2. The results are shown in Table 2 and Figure 2. The relative ratio when the start of use is set to 1 表示 indicates that the cumulative power amount is 93 at 1 600 kWHr, which is slightly lower than that of Example 2. The 'sputtering characteristic is to investigate the number of arc generations. The results are shown in Table 3 and Figure 3. The beginning of use is 〇, which tends to increase gradually with continuous sputtering, and is 93 times at a cumulative power of 16 〇〇 kWHr. The number of arc generations and examples 2 compared to a slight increase. Further 'the loss rate of the investigation step. The results are shown in Table 4 and Figure 4. As a result, the cumulative power amount is 〇〇 35 at 16 〇〇 kwHr, and the step loss rate is increased. According to the above results, the following results were clearly obtained: compared with Example 2, 21 201126004 was slightly inferior in either case. (Comparative Example 5) Using a copper support plate and a dry layer shown in Fig. 10, ITO (indium tin oxide) was used in the same manner as in the second embodiment. Fig. 1 is a plan view (part), a C-C sectional view, an A-A sectional view, and a B-B sectional view of the target support plate assembly. As shown in Fig. 1A, the support plate of the dry support plate assembly of Comparative Example 5 has a rectangular shape (rectangular shape) on the plane, and both end portions in the longitudinal direction of the target have an elliptical shape. At this time, the split target is used. The support board uses a flat support board. Moreover, for the targets on both sides, there is a difference between the other adjacent sides of the central portion, which is 11.5 mm at the highest portion, and is arranged with a split target that is inclined to the same height as the target of 1〇5 mm by indium. The solder bonds the pieces directly to the support plate. The ITO (Indium Tin Oxide) target support plate assembly was used for magnetron sputtering. The sputtering conditions are sputtered at a sputtering power of 丨〇 kW to 〇〇6〇〇 kWh. The weight of the target 1 piece before use was 34.5 kg: the weight after use was 27 〇 kg. As a result, the use efficiency was 22%, and the efficiency was lower than that of the above Example 2. The results are also shown in Table 1. In order to observe the sputtering characteristics, the film formation speed was examined in the same manner as in Example 2. The results are shown in Fig. 2 and the graph shows the relative ratio when the start of use is set to 100. The cumulative power amount is 83 at 1600 kWHr, which is significantly lower than that of the second embodiment. The 'splash clock' feature investigates the number of arc generations. The H results are shown in Table 3 and Figure 3. At the beginning of use, G ’ gradually increases with the continuation (10)
22 S 201126004 電弧產生次 向，於累計功率量為1600 kWHr下為155次 數與實施例2相比明顯增加。 …調查步驟之損失率。將其結果示於表4及圖4。 其結果’於累計功率量為議kWHr下為〇6 率明顯升高。 少哪鋼夭 根據以上結果明顯可獲得下述結果：與實施例2相比’ 任一情形下均明顯較差。 (比較例6) /吏用圖11所示之銅製支持板與乾，與實施例2同樣， 靶係使用ITO(銦錫氧化物)。w u係表示靶支持板組裝體 平面圖（邛分）、C _ C剖面圖、A _ A剖面圖U叫 面圖。如該圖U所示，比較例6之乾支持板組裝體之支： 板於平面上為矩形(長方形)’靶之長度方向之兩端部為橢圓 形此時使用分割乾。支持板係使用整面平坦之支持板。 a對於兩邊部之靶，與其他鄰接之靶存在高低差，於最 高部為11.5咖，並配置具有傾斜至與中央部之鄰接的1〇 5 職厚之絶相同高度之上面的分割乾，藉由銦焊錫將該等與 支持板直接接合。 此時，兩邊部之靶超過段差，如圖u所示，使其延伸 至中央部之靶。即’使其具有與厚度較薄的中央部之厚度 相同厚度之水平部分。 义 使用該ITO(銦錫氧化物）靶支持板組裝體進行磁控濺 鍍。濺鍍條件係於濺鍍功率為10kw至1600 kwh下進行濺 23 201126004 靶1片之使用前重量為34 5 kg，使用後之重量為26 9 kg。其結果，使用效率為22%，效率低於上述實施例2。同 樣將其結果示於表1。 為了觀察濺鍍特性，與實施例2同樣，調查成膜速度 之變動。將其結果示於| 2及圖2。以將使用開始時設為 100時之相對比表不，於累計功率量為16〇〇 kwHr下為84， 與實施例2相比明顯降低。 又’錢鑛特性係f周纟I弧產生次數。冑《結果示於表3 及圖3。使用開始時為〇，隨著持續濺鍛而有逐漸增加之傾 向’於累計功率量為16〇〇 kWHr下為148:欠電弧產生次 數與實施例2相比明顯增加。 進而’調查步驟之損失率。將其結果示於表4及圖4。 其結果，於累計功率量為16〇〇 kWHr下為〇 “ 率明顯升高。 哪谓天 很據以上結果明顯可獲得 ，、 穴貝他例2相tl =形下均明顯較差。特別是於無之初期㈣面存在 -差者，不良率較高之傾向較強。 [產業上之可利用性] 本發明之支持板組裝體有以 之壽命，並且 卜政果·可延長該 過程中膜之均厚之均 即便存在因靶材料之種類而變化之濺蝕差昱 亦可容易地製造對應固有之乾㈣之乾 ：差異 作能用於各種材料之把支持板組裝體。 可有效地 24 201126004 【圖式簡單說明】 圖1係實施例1之靶支持板組裝體之平面圖（一部分）、 C — C剖面圖、A — A剖面圖、B — B剖面圖。 圖2係表示實施例及比較例之成膜速度之變動結果圖。 圖3係表示實施例及比較例之電弧產生次數結果圖。 圖4係表示實施例及比較例之步驟損失率結果圖。 圖5係比較例1之靶支持板組裝體之平面圖（一部分）、 C—C剖面圖、A—A剖面圖、B—B剖面圖。 圖6係比較例2之靶支持板組裝體之平面圖（一部分）、 C—C剖面圖、A—A剖面圖、B—B剖面圖。 圖7係比較例3之靶支持板組裝體之平面圖（一部分）、 C—C剖面圖、A—A剖面圖、B—B剖面圖。 圖8係實施例2之靶支持板組裝體之平面圖（一部分）、 C — C剖面圖、A — A剖面圖、B — B剖面圖。 圖9係比較例4之靶支持板組裝體之平面圖（一部分）、 C—C剖面圖、A—A剖面圖、B—B剖面圖。 圖1 0係比較例5之靶支持板組裝體之平面圖（一部 分）、C — C剖面圖、A — A剖面圖、B — B剖面圖。 圖1 1係比較例6之靶支持板組裝體之平面圖（一部 1 分）、C—C剖面圖、A—A剖面圖、B—B剖面圖。 【主要元件符號說明】 1 靶 2 長度方向兩端部附近有段差之支持板 25 201126004 3 分割靶之分割部 4 段差 5 形成於乾之錢触面之傾斜面 6 平板狀支持板 2622 S 201126004 The arc is generated in the second direction, and the number of accumulated electric power is 155 times at 1600 kWHr, which is significantly higher than that in the second embodiment. ...the loss rate of the investigation step. The results are shown in Table 4 and Figure 4. As a result, the rate of 〇6 is significantly increased at the cumulative power amount of kWHr. According to the above results, the following results were clearly obtained: in either case, it was significantly inferior in any case. (Comparative Example 6) The copper support plate and the dry layer shown in Fig. 11 were used, and in the same manner as in the second embodiment, ITO (indium tin oxide) was used as the target. w u denotes a plan view of a target support plate assembly, a C _ C sectional view, and an A _ A sectional view U. As shown in Fig. U, the support of the dry support plate assembly of Comparative Example 6: the plate is rectangular (rectangular) in the plane. The both ends of the target in the longitudinal direction are elliptical. The support board uses a flat support board. a. For the targets on both sides, there is a difference in height from other adjacent targets, which is 11.5 coffee at the highest part, and is arranged to have the same height above the same height as the 1〇5 position adjacent to the center. These are bonded directly to the support plate by indium solder. At this time, the target of both sides exceeds the step, as shown in Fig. u, and extends to the target at the center. That is, it is made to have a horizontal portion having the same thickness as the thickness of the central portion having a small thickness. The ITO (Indium Tin Oxide) target support plate assembly was used for magnetron sputtering. The sputtering conditions are sputtered at a sputtering power of 10kw to 1600kwh. 23 201126004 The weight of the target 1 piece is 34 5 kg before use, and the weight after use is 26 9 kg. As a result, the use efficiency was 22%, and the efficiency was lower than that of the above Example 2. The results are also shown in Table 1. In order to observe the sputtering characteristics, the film formation speed was examined in the same manner as in Example 2. The results are shown in | 2 and Figure 2. The relative ratio when the start of use was set to 100 was shown to be 84 at the cumulative power amount of 16 〇〇 kwHr, which was significantly lower than that of the second embodiment. In addition, the 'mine mineral characteristics' is the number of times the arc is generated.胄 "The results are shown in Table 3 and Figure 3. At the beginning of the use, it was 〇, and there was a gradual increase in inclination with continuous sputtering. ‘The cumulative power amount was 16 〇〇 kWHr was 148: the number of under-arc generations was significantly increased as compared with Example 2. Furthermore, the loss rate of the investigation step. The results are shown in Table 4 and Figure 4. As a result, the cumulative rate of power is 16 〇〇 kWHr, and the rate is significantly higher. Which is said that the day is obviously available according to the above results, and the acupoints of the 2nd phase are significantly worse. Especially in In the initial stage (4), there is a tendency to have a high defect rate. [Industrial Applicability] The support plate assembly of the present invention has a long life, and the Buzheng fruit can extend the film in the process. Even if there is a difference in the thickness of the target material due to the type of the target material, the corresponding dry (4) can be easily produced: the difference can be used for the support plate assembly of various materials. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view (partial), a C-C sectional view, an A-A sectional view, and a B-B sectional view of a target supporting plate assembly of Embodiment 1. FIG. 2 is a view showing an embodiment and Fig. 3 is a graph showing the results of the number of arc generation times in the examples and comparative examples. Fig. 4 is a graph showing the results of the step loss rate in the examples and comparative examples. Fig. 5 is a graph showing the results of the loss rate of the examples and comparative examples. Plan view of the target support plate assembly ( Part), C-C sectional view, A-A sectional view, and B-B sectional view. Fig. 6 is a plan view (partial), C-C sectional view, and A-A sectional view of the target support plate assembly of Comparative Example 2. Figure 7 is a plan view (partial), a C-C cross-sectional view, an A-A cross-sectional view, and a B-B cross-sectional view of the target support plate assembly of Comparative Example 3. Figure 8 is a second embodiment Plan view (partial), C-C cross-sectional view, A-A cross-sectional view, and B-B cross-sectional view of the target support plate assembly. Fig. 9 is a plan view (partial) of the target support plate assembly of Comparative Example 4, C-C Cross-sectional view, A-A cross-sectional view, B-B cross-sectional view. Figure 10 is a plan view (partial) of the target support plate assembly of Comparative Example 5, C-C cross-sectional view, A-A cross-sectional view, B-B profile Fig. 1 is a plan view (one part 1 point), C-C section view, A-A section view, and B-B section view of the target support plate assembly of Comparative Example 6. [Main component symbol description] 1 Target 2 Support plate with step difference near the two ends in the length direction 201126004 3 Segmentation of the split target 4 Segment difference 5 Formed on the slope of the dry money contact 6 flat plate-like support plate 26