CN110414131B - Method for selecting interlayer of diffusion welding assembly of Co target backboard with sandwich structure - Google Patents
Method for selecting interlayer of diffusion welding assembly of Co target backboard with sandwich structure Download PDFInfo
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Abstract
The invention discloses a method for selecting an interlayer of a diffusion welding assembly of a Co target backboard with a sandwich structure, and belongs to the field of Co sputtering target manufacturing. By establishing a stress mathematical model of the diffusion welding assembly of the Co target backboard with the sandwich structure, the relation between the stress in the target, the middle layer and the backboard and the thermal expansion coefficients of the target, the backboard and the middle layer is solved. Therefore, theoretical guidance is provided for selecting the interlayer for diffusion welding of the Co target backboard with the sandwich structure, the welding residual stress of the diffusion welding assembly of the Co target backboard is reduced, and the reliability of the diffusion welding assembly is improved.
Description
Technical Field
The invention relates to the technical field of Co sputtering target manufacturing, in particular to a method for selecting a middle layer of a diffusion welding assembly of a Co target backboard with a sandwich structure.
Background
Cobalt thin films are widely used as a magnetic thin film in electronic devices. With the multifunction, high density, and light weight of electronic devices, the demand for thin film materials is increasing. The sputtering coating technology is widely applied because the prepared film has the advantages of good adhesion, easy maintenance of the composition ratio of compounds and alloys, uniform film thickness, large-area coating and small temperature rise of a substrate.
The target material is a key material in sputter coating, and in order to improve the rigidity of the target material back plate assembly and provide mechanical support, the target material and the back plate are usually connected together by means of diffusion welding. The connection between the target material and the back plate not only needs to provide reliable mechanical connection to ensure that the target material does not fall off in the sputtering process, but also needs to have good electric conduction and heat conduction between the back plate and the target material, so that heat generated in the sputtering process of the target material can be dissipated through the back plate in time.
However, the thermal mismatch between the target and the back plate often causes residual welding stress of the target back plate, which leads to the problems of desoldering, warping and the like of the target back plate assembly. In order to relieve the residual welding stress, reduce the diffusion welding temperature, pressure and holding time and promote the diffusion process, an intermediate layer is often added between the target material and the back plate. However, in the manufacturing process of the Co target material, the selection of the intermediate layer is selected according to practical experience or continuous test methods, and there is no qualitative or quantitative theoretical basis.
Disclosure of Invention
The invention aims to provide a method for selecting an intermediate layer of a diffusion welding assembly of a Co target backboard with a sandwich structure.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a method for selecting an interlayer of a diffusion welding assembly of a Co target backboard with a sandwich structure comprises the following steps:
(A) Establishing a geometric model of the diffusion welding assembly of the Co target material back plate:
after simplifying the structure of the diffusion welding assembly of the Co target material back plate, establishing a geometric model of the assembly, and specifically processing according to the steps (A1), (A2) and (A3):
(A1) Establishing a Cu back plate model: taking the circle center of the lower bottom surface of the Cu backboard as a coordinate origin, taking the radial direction of the target backboard component structure as the X-axis direction, and taking the thickness direction of the component as the Z-axis direction to establish a Cu backboard model with the radius of r1 and the thickness of t 1;
(A2) Establishing an intermediate layer model: establishing an intermediate layer model with radius and thickness of r1 and t2 respectively;
(A3) Establishing a target model: establishing a target material structure model with radius r1 and thickness t 3;
(B) Establishing a mathematical model of stress of the diffusion welding assembly of the target back plate, and performing the following steps (B1), (B2) and (B3):
(B1) Residual stress in the target back plate diffusion welding assembly is two-dimensional plane stress, and the thickness, the elastic modulus, the thermal expansion coefficient, the average stress and the average strain of the back plate are defined as t1, E1, alpha 1, sigma 1 and epsilon 1 respectively; defining the thickness, the elastic modulus, the thermal expansion coefficient, the average stress and the average strain of the intermediate layer as t2, E2, alpha 2, sigma 2 and epsilon 2 respectively; defining the thickness, the elastic modulus, the thermal expansion coefficient, the average stress and the average strain of the target material as t3, E3, alpha 3, sigma 3 and epsilon 3 respectively;
(B2) Establishing a stress-strain relation among the back plate, the intermediate layer and the target material, as shown in formulas (1) to (3);
backing plate: σ 1= e1 × ∈ 1 (1);
intermediate layer: σ 2= e2 × ∈ 2 (2);
target material: σ 3= e3 × ∈ 3 (3);
(B3) Establishing the relationship between the thermal expansion coefficient and the strain:
residual stress in the target material back plate diffusion welding assembly is caused by mismatching of thermal expansion coefficients of the target material, the back plate and the welding layer, so that the relationship between the thermal expansion coefficient and strain is shown in formulas (4) to (7), and the stress in the target material back plate diffusion welding assembly meets a stress balance formula (8);
ε12＝ε1-ε2＝(ɑ1-ɑ2)X(T at room temperature -T Temperature of welding ) (4)；
ε23＝ε2-ε3＝(ɑ2-ɑ3)X(T At room temperature -T Temperature of welding ) (5)；
F1+F2+F3＝0 (8)；
In formulas (4) to (8): epsilon 12 is the difference between the thermal strain of the back plate and the thermal strain of the intermediate layer in the cooling process when the constraint is not applied, epsilon 23 is the difference between the thermal strain of the intermediate layer and the thermal strain of the target material in the cooling process when the constraint is not applied, and T At room temperature At room temperature, T Temperature of welding Is the diffusion welding temperature; f1 is the stress of a back plate in the assembly, F2 is the stress of a middle layer in the assembly, and F3 is the stress of a target in the assembly;
(C) Let T At room temperature -T Temperature of welding = Δ T, equations (1) - (8) are connected, and F1, F2, and F3 are solved, as shown in equations (9) - (11);
(D) And (D) obtaining the relation between residual stress in the target, the intermediate layer and the back plate and the thermal expansion coefficient of each part according to the solving formulas of F1, F2 and F3 established in the step (C), and selecting the intermediate layer of the diffusion welding component of the target back plate according to the relation.
The sandwich structure Co target material back plate diffusion welding assembly comprises a Co target material, a Cu back plate and an intermediate layer between the Co target material and the Cu back plate, and is prepared by adopting a diffusion welding process.
In the step (a), the simplified treatment of the structure of the diffusion welding assembly of the Co target backboard is as follows: ignoring cooling channel structures in the backplate; neglecting a sawtooth structure at the diffusion bonding interface and setting the sawtooth structure as a straight interface; the Co target backboard component structure has an axisymmetric structure, so that a meridian plane of the target backboard component structure is selected, and two-dimensional plane analysis is used for replacing three-dimensional analysis.
In the step (C), the following conclusions can be drawn from the solving formulas of F1, F2, and F3 shown in formulas (9) to (11):
(C1) The stress F1 of the back plate in the target back plate diffusion welding assembly is in positive correlation with the thermal expansion coefficient alpha 1 of the back plate, in negative correlation with the thermal expansion coefficient alpha 2 of the middle layer and in negative correlation with the thermal expansion coefficient alpha 3 of the target;
(C2) The stress F2 of the middle layer in the target material backboard diffusion welding assembly is in negative correlation with the thermal expansion coefficient alpha 1 of the backboard, is in positive correlation with the thermal expansion coefficient alpha 2 of the middle layer and is in negative correlation with the thermal expansion coefficient alpha 3 of the target material;
(C3) The stress F3 of the target in the target backboard diffusion welding assembly is in negative correlation with the thermal expansion coefficient alpha 1 of the backboard, in negative correlation with the thermal expansion coefficient alpha 2 of the middle layer and in positive correlation with the thermal expansion coefficient alpha 3 of the target.
Compared with the prior art, the invention has the beneficial effects that:
the invention takes a target material backboard diffusion welding component with a Co target material/middle layer/Cu backboard sandwich structure as a research object, obtains the relation between residual stress in the target material, the middle layer and the backboard and the thermal expansion coefficient of each part by establishing a stress mathematical model, and provides theoretical guidance for selecting the middle layer in the manufacture of the target material backboard diffusion welding component with the sandwich structure.
Drawings
FIG. 1 is a flow chart of the interlayer selection method of the present invention.
Fig. 2 is a schematic structural view of a diffusion welding assembly of a target backing plate with a sandwich structure.
FIG. 3 is a schematic diagram of stress generated by mismatch of thermal expansion coefficients in a diffusion welded assembly of a target backing plate with a sandwich structure.
Detailed Description
For a better understanding of the present invention, reference is made to the following description taken in conjunction with the accompanying drawings and examples.
Example 1:
in this embodiment 1, a diffusion welding assembly of a Co target backplane with a sandwich structure prepared by a diffusion welding process is used as a research object, the assembly structure is a Co target/intermediate layer/Cu backplane, and a flow of selecting the intermediate layer of the assembly is shown in fig. 1, and the method specifically includes the following steps:
(A) After simplifying the diffusion welding structure of the Co target material back plate, establishing a geometric model of the diffusion welding assembly of the target material back plate:
the actual structure of the target back plate assembly is complex, and in order to simplify the model and not affect the research precision, the target back plate diffusion welding assembly needs to be simplified as follows: neglecting cooling channel structures in the Cu backplane; in order to facilitate the diffusion process, a sawtooth structure is prepared at a diffusion bonding interface in actual production, and the sawtooth structure at the interface is ignored in the method and is set as a straight interface; the Co target backing plate assembly structure has an axisymmetric structure as shown in fig. 2, so that one meridian plane of the target backing plate assembly structure is selected for two-dimensional plane analysis instead of three-dimensional analysis.
Establishing a geometric model of the target back plate diffusion welding assembly according to the following steps (A1), (A2) and (A3):
(A1) Establishing a Cu back plate model: the circle center of the lower bottom surface of the Cu back plate is used as a coordinate origin, the radial direction of the target back plate assembly structure is the X-axis direction, the thickness direction is the Z-axis direction, and the Cu back plate with the radius of r1 and the thickness of t1 is established.
(A2) Establishing an intermediate layer model: and establishing an intermediate layer model with the radius and the thickness of r1 and t2 respectively.
(A3) Establishing a target model: and establishing a target structure model with radius r1 and thickness t 3.
(B) Establishing a mathematical model of the stress of the diffusion welding assembly of the target back plate assembly, as shown in fig. 3, specifically performing the following steps (B1), (B2) and (B3):
(B1) The residual stress of diffusion welding of the target back plate assembly is two-dimensional plane stress, and the thickness, the elastic modulus, the thermal expansion coefficient, the average stress and the average strain of the back plate are defined as t1, E1, alpha 1, sigma 1 and epsilon 1 respectively; the thickness, elastic modulus, thermal expansion coefficient, average stress and average strain of the intermediate layer are respectively t2, E2, alpha 2, sigma 2 and epsilon 2; and (3) respectively setting the thickness, the elastic modulus, the thermal expansion coefficient, the average stress and the average strain of the target as t3, E3, alpha 3, sigma 3 and epsilon 3, and establishing a mechanical model of the meridian plane of the target back plate diffusion welding assembly according to the steps (B2) and (B3).
(B2) Establishing a stress-strain relation among the back plate, the intermediate layer and the target material, as shown in formulas (1) to (3);
backing plate: σ 1= E1 × ε 1 (1)
Intermediate layer: σ 2= E2 × ε 2 (2)
Target material: σ 3= E3 × ε 3 (3)
(B3) A relationship between the coefficient of thermal expansion and strain is established.
The diffusion welding residual stress of the target back plate is caused by the mismatching of the thermal expansion coefficients of the target, the back plate and the welding layer, and the generation process of the residual stress is shown in fig. 3. The relationship between the thermal expansion coefficient and the strain is shown in formulas (4) to (7), and the stress in the target material back plate diffusion welding assembly meets a stress balance formula (8);
ε12＝ε1-ε2＝(ɑ1-ɑ2)X(T at room temperature -T Temperature of welding ) (4)；
ε23＝ε2-ε3＝(ɑ2-ɑ3)X(T At room temperature -T Temperature of welding ) (5)；
F1+F2+F3＝0 (8)。
In equations (4) to (8): epsilon 12 is the difference between the thermal strain of the back plate and the thermal strain of the intermediate layer in the cooling process when the constraint is not applied, epsilon 23 is the difference between the thermal strain of the intermediate layer and the thermal strain of the target material in the cooling process when the constraint is not applied, and T At room temperature At room temperature, T Temperature of welding Is the diffusion welding temperature; f1 is the stress of the back plate in the assembly, F2 is the stress of the middle layer in the assembly, and F3 is the stress of the target in the assembly.
(C) Let T At room temperature -T Temperature of welding = Δ T, equations (1) - (8) are simultaneously solved, F1, F2, F3 are solved, as shown in equations (9) - (11);
(D) Obtaining the relationship between residual stress in the target, the intermediate layer and the back plate and the thermal expansion coefficient of each part according to the solving formulas of F1, F2 and F3 established in the step (C), wherein the concrete conclusion is (C1) - (C3):
(C1) The stress (F1) of the back plate in the target back plate diffusion welding assembly is in positive correlation with the thermal expansion coefficient (alpha 1) of the back plate, in negative correlation with the thermal expansion coefficient (alpha 2) of the intermediate layer and in negative correlation with the thermal expansion coefficient (alpha 3) of the target.
(C2) The stress (F2) of the middle layer in the target material back plate diffusion welding assembly is in negative correlation with the thermal expansion coefficient (alpha 1) of the back plate, is in positive correlation with the thermal expansion coefficient (alpha 2) of the middle layer, and is in negative correlation with the thermal expansion coefficient (alpha 3) of the target material.
(C3) The stress (F3) of the target in the target backboard diffusion welding assembly is in negative correlation with the thermal expansion coefficient (alpha 1) of the backboard, in negative correlation with the thermal expansion coefficient (alpha 2) of the middle layer and in positive correlation with the thermal expansion coefficient (alpha 3) of the target.
And (5) selecting the intermediate layer of the diffusion welding assembly of the target backboard according to the conclusions (C1) - (C3).
From step (D) it follows: the residual stresses F1 and F3 in the backing plate, the target, are inversely related to the coefficient of thermal expansion α 2 of the intermediate layer, i.e. the larger α 2 the smaller F1 and F3. The thermal expansion coefficient of Zn is 3.6X 10 -5 V. degree C, the coefficient of thermal expansion of Al is 2.4X 10 -5 V. C. The welding residual stress of the Co/Zn/Cu structure according to the method is smaller than that of the Co/Al/Cu structure, i.e. Zn should be selected as the intermediate layer.
And (3) verifying by adopting a finite element method:
and respectively calculating the welding residual stress of the Co target material/Zn intermediate layer/Cu back plate and the welding residual stress of the Co target material/Al intermediate layer/Cu back plate by adopting a finite element method. The calculation result shows that the maximum Von Mises residual stress of the Co target material/Zn intermediate layer/Cu back plate is 47.1MPa, and the maximum Von Mises residual stress of the Co target material/Al intermediate layer/Cu back plate is 126MPa, so that the correctness of the method is fully explained.
Claims (4)
1. A method for selecting an interlayer of a diffusion welding assembly of a Co target backboard with a sandwich structure is characterized by comprising the following steps: the selection method of the intermediate layer comprises the following steps:
(A) Establishing a geometric model of the diffusion welding assembly of the Co target material back plate:
after simplifying the structure of the diffusion welding assembly of the Co target material back plate, establishing a geometric model of the assembly, and specifically processing according to the steps (A1), (A2) and (A3):
(A1) Establishing a Cu back plate model: taking the circle center of the lower bottom surface of the Cu backboard as a coordinate origin, taking the radial direction of the target backboard component structure as the X-axis direction, and taking the thickness direction of the component as the Z-axis direction to establish a Cu backboard model with the radius of r1 and the thickness of t 1;
(A2) Establishing an intermediate layer model: establishing an intermediate layer model with radius and thickness of r1 and t2 respectively;
(A3) Establishing a target model: establishing a target material structure model with radius r1 and thickness t 3;
(B) Establishing a mathematical model of stress of the diffusion welding assembly of the target back plate, and performing the following steps (B1), (B2) and (B3):
(B1) Residual stress in the diffusion welding assembly of the target back plate is two-dimensional plane stress, and the thickness, the elastic modulus, the thermal expansion coefficient, the average stress and the average strain of the back plate are defined as t1, E1, alpha 1, sigma 1 and epsilon 1 respectively; defining the thickness, the elastic modulus, the thermal expansion coefficient, the average stress and the average strain of the intermediate layer as t2, E2, alpha 2, sigma 2 and epsilon 2 respectively; defining the thickness, the elastic modulus, the thermal expansion coefficient, the average stress and the average strain of the target material as t3, E3, alpha 3, sigma 3 and epsilon 3 respectively;
(B2) Establishing a stress-strain relation among the back plate, the intermediate layer and the target material, as shown in formulas (1) to (3);
backing plate: σ 1= e1 × ∈ 1 (1);
intermediate layer: σ 2= e2 × ∈ 2 (2);
target material: σ 3= e3 × ∈ 3 (3);
(B3) Establishing the relationship between the thermal expansion coefficient and the strain:
residual stress in the target material back plate diffusion welding assembly is caused by mismatching of thermal expansion coefficients of the target material, the back plate and the welding layer, so that the relationship between the thermal expansion coefficient and strain is shown in formulas (4) to (7), and the stress in the target material back plate diffusion welding assembly meets a stress balance formula (8);
ε12＝ε1-ε2＝(α1-α2)×(T at room temperature -T Temperature of welding ) (4)；
ε23＝ε2-ε3＝(α2-α3)×(T At room temperature -T Temperature of welding ) (5)；
F1+F2+F3＝0 (8)；
In equations (4) to (8): epsilon 12 is the difference between the thermal strain of the back plate and the thermal strain of the intermediate layer in the cooling process when unconstrained, epsilon 23 is the difference between the thermal strain of the intermediate layer and the thermal strain of the target material in the cooling process when unconstrained, and T At room temperature At room temperature, T Temperature of welding Is the diffusion welding temperature; f1 is the stress of a back plate in the assembly, F2 is the stress of a middle layer in the assembly, and F3 is the stress of a target in the assembly;
(C) Let T At room temperature -T Temperature of welding = Δ T, equations (1) to (8) are simultaneously established, and F1, F2, and F3 are solved, as shown in equations (9) to (11);
(D) And (4) obtaining the relation between residual stress in the target, the intermediate layer and the back plate and the thermal expansion coefficient of each part according to the solving formulas of F1, F2 and F3 established in the step (C), and selecting the intermediate layer of the diffusion welding component of the target back plate according to the relation.
2. The method for selecting the interlayer of the diffusion welding assembly of the sandwich-structure Co target backboard according to claim 1, wherein the method comprises the following steps: the sandwich-structure Co target material backboard diffusion welding assembly comprises a Co target material, a Cu backboard and an intermediate layer between the Co target material and the Cu backboard, and is prepared by adopting a diffusion welding process.
3. The method for selecting the interlayer of the diffusion welding assembly of the sandwich-structure Co target backboard according to claim 1, wherein the method comprises the following steps: in the step (A), the simplified treatment mode of the diffusion welding assembly structure of the Co target backboard is as follows: ignoring cooling channel structures in the backplate; neglecting a sawtooth structure at the diffusion bonding interface and setting the sawtooth structure as a straight interface; the Co target backboard component structure has an axisymmetric structure, so that a meridian plane of the target backboard component structure is selected to perform two-dimensional plane analysis instead of three-dimensional analysis.
4. The method for selecting the interlayer of the diffusion welding assembly of the sandwich-structure Co target backboard according to claim 1, wherein the method comprises the following steps: in step (C), the following conclusions can be drawn from the solving formulas of F1, F2, and F3 shown in formulas (9) to (11):
(C1) The stress F1 of the back plate in the target back plate diffusion welding assembly is in positive correlation with the thermal expansion coefficient alpha 1 of the back plate, in negative correlation with the thermal expansion coefficient alpha 2 of the middle layer and in negative correlation with the thermal expansion coefficient alpha 3 of the target;
(C2) The stress F2 of the middle layer in the target material backboard diffusion welding assembly is in negative correlation with the thermal expansion coefficient alpha 1 of the backboard, is in positive correlation with the thermal expansion coefficient alpha 2 of the middle layer and is in negative correlation with the thermal expansion coefficient alpha 3 of the target material;
(C3) The stress F3 of the target in the target back plate diffusion welding assembly is in negative correlation with the thermal expansion coefficient alpha 1 of the back plate, in negative correlation with the thermal expansion coefficient alpha 2 of the middle layer and in positive correlation with the thermal expansion coefficient alpha 3 of the target.
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| CN106607667A (en) * | 2015-10-26 | 2017-05-03 | 宁波江丰电子材料股份有限公司 | Manufacturing method for target material assembly |
| CN106702333A (en) * | 2015-07-29 | 2017-05-24 | 宁波江丰电子材料股份有限公司 | Manufacturing method of target material assembly |
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| CN106702333A (en) * | 2015-07-29 | 2017-05-24 | 宁波江丰电子材料股份有限公司 | Manufacturing method of target material assembly |
| CN106607667A (en) * | 2015-10-26 | 2017-05-03 | 宁波江丰电子材料股份有限公司 | Manufacturing method for target material assembly |
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