CN110569592A - Finite element simulation method for stress in target back plate assembly with intermediate layer - Google Patents
Finite element simulation method for stress in target back plate assembly with intermediate layer Download PDFInfo
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Abstract
the invention discloses a finite element simulation method for stress in a target back plate assembly containing an intermediate layer, and belongs to the field of computer aided engineering. The finite element simulation method adopts a dispersion method to disperse the gradient middle layer into a multi-layer structure with more limitation, the material performance in each layer is uniformly distributed along the thickness, and the material performance between the dispersion layers is changed. The change of the performance change rate of the material of the gradient intermediate layer can be realized by changing the thickness of the intermediate layer and the discrete layer number, so that the distribution and the size of the residual stress of the target material assembly containing the intermediate layer are changed. The finite element simulation method can be used for the research on the design and the manufacture of the target component with the middle layer, can save the experiment cost and shorten the product design period.
Description
Technical Field
the invention relates to the technical field of computer aided engineering, in particular to a finite element simulation method of stress in a target material back plate assembly containing an intermediate layer.
Background
with the development of electronic information and new and advanced technologies, the application of thin film science is increasingly widespread. Since the thin film material has different electrical, optical, magnetic, thermal, and other properties from the substrate, it is widely used in semiconductor manufacturing industries mainly including integrated circuits and discrete devices, flat display panel manufacturing industries mainly including TFT-LCD and OLED, and new energy manufacturing industries mainly including thin film solar cells. In recent years, due to the strong support of the country, the industries have rapidly developed, and the demand of China for film materials is gradually increased. As electronic devices are becoming multifunctional, denser, and lighter, the texture and thickness uniformity of thin film materials have a greater influence on electronic devices, and thus, the preparation of high-quality thin films is becoming more and more important.
The sputtering coating technology is widely applied because the prepared film has the advantages of good adhesion, easy maintenance of the composition ratio of the compound and the alloy, uniform film thickness and large-area coating, small substrate temperature rise and realization of high-melting-point metal coating.
The target material is a key material for sputtering coating, and the target material and the back plate are usually connected together by diffusion welding to form a target material back plate assembly. The connection between the target material and the back plate not only needs to provide reliable mechanical connection to ensure that the target material does not fall off in the sputtering process, but also needs to have good electric conduction and heat conduction between the back plate and the target material, so that heat generated in the sputtering process of the target material can be dissipated through the back plate in time.
however, the thermal mismatch between the target and the backing plate often causes welding residual stress, so that the backing plate assembly of the target has problems of welding failure, warping and the like. Meanwhile, the secondary recycling of the target material is difficult, which causes great waste. The design and application of the gradient intermediate layer are expected to solve the problem of diffusion welding stress of the Co target material back plate assembly. However, the target material is usually some rare and precious high-purity metals, the price is high, the influence of the gradient intermediate layer on the welding stress is studied by an experimental method, the cost is extremely high, the efficiency is low, and great waste is caused, and meanwhile, the measurement of the welding residual stress of the target material back plate assembly is difficult and expensive. Therefore, the influence of the experimental method on the welding residual stress of the target backing plate is limited. The finite element numerical simulation method is widely applied to product design and process optimization due to the characteristics of economy, high efficiency and rapidness, but no effective and simple finite element simulation method related to gradient materials exists at present.
Disclosure of Invention
The invention aims to provide a finite element simulation method for stress in a target backboard component containing an intermediate layer. Setting each layer of material to be homogeneous material, and taking the function value f (z) of the material property at the middle position of the layer, wherein the f (z) is the material property distribution function of the gradient middle layer along the thickness. By changing the thickness of the gradient intermediate layer and the number n of discrete layers, the change of material properties from the target to the backing plate can be realized.
in order to achieve the purpose, the technical scheme adopted by the invention is as follows:
A finite element simulation method for stress in a target backing plate assembly with an intermediate layer comprises the following steps:
(1) After the structure of the target back plate assembly is simplified, establishing a geometric model of the target back plate assembly according to the steps (101) to (103);
(101) establishing a Cu back plate model: establishing a Cu back plate with radius r1 and thickness h1 by taking the circle center of the lower bottom surface of the Cu back plate as a coordinate origin, the radial direction of the target back plate assembly structure as an X-axis direction and the thickness direction as a Z-axis direction;
(102) Establishing a gradient interlayer model: the radius and the thickness of the gradient middle layer are r2 and h2 respectively, the gradient middle layer is dispersed into n layers of structures along the thickness direction, the thickness of each layer of structure is h2/n, n is more than or equal to 1, and different materials are selected for each layer of structure in the gradient middle layer; the selection of n depends on the thickness of the intermediate layer and the design standard of the residual stress of the component, and is determined by the optimization of the calculation simulation result.
(103) establishing a target model: establishing a target structure model with radius r2 and thickness h 3;
(2) generating a finite element model of the target material back plate assembly;
(3) and (3) applying a boundary condition, comprising the steps (301) and (302):
(301) temperature load application: setting the temperature of the target material back plate assembly at 400 ℃ when the welding is finished, and cooling to 25 ℃ within 60 min; setting the reference temperature to be 400 ℃, wherein the state when welding is finished is a zero-stress state;
(302) application of structural constraints: the target back plate assembly has the characteristic of axial symmetry, so that UX-0 displacement constraint is applied at the position of a symmetry axis, namely X-0, and UZ-0 displacement constraint is applied at the position of the lower bottom surface of the Cu back plate, namely Z-0;
(4) Calculating and solving to obtain the temperature field distribution and residual stress distribution of the target material back plate assembly; judging whether the calculated welding residual stress of the target assembly containing the middle layer is smaller than a designed maximum residual stress standard value of the target; if the thickness is smaller than the maximum residual stress standard value, the gradient intermediate layer with the thickness and the discrete layers is used for guiding industrial production; and (4) if the calculated residual stress of the target assembly with the intermediate layer is greater than the maximum residual stress standard value, repeating the processes in the steps (1) to (4), and increasing the thickness of the intermediate layer and the discrete layer number n until the residual stress calculated in a simulation mode is less than the maximum residual stress standard value.
the target material back plate assembly is of a sandwich structure prepared by adopting a diffusion welding method and comprises a Co target material, a gradient intermediate layer and a Cu back plate which are sequentially compounded.
in the step (1), the method for simplifying the structure of the target backing plate assembly comprises the following steps: the actual structure of the target back plate assembly is complex, and the target back plate diffusion welding assembly needs to be simplified in order to simplify finite element simulation and not influence the research precision: (1) ignoring cooling channel structures in the backplate; (2) in order to facilitate the diffusion process, a sawtooth structure is prepared at a diffusion bonding interface in actual production, and the sawtooth structure at the interface is neglected in the research of the influence of a gradient intermediate layer on welding residual stress and is set as a straight interface; (3) the Co target backboard component structure has an axisymmetric structure, so that one meridian plane of the target backboard component structure is selected for two-dimensional plane analysis instead of three-dimensional analysis.
In the step (2), the generating of the finite element model of the target backing plate assembly includes the following steps (201) to (205):
(201) Cu backboard material property addition: selecting a geometric model with Z value in the range of [0, h1] through geometric position selection, and endowing the copper material with attributes;
(202) material property addition of the gradient intermediate layer: selecting a geometric model, namely an ith discrete layer, with Z being in the range of [ h1+ i h2/n, h1+ (i +1) h2/n ] (1 is not less than i < n) through geometric position selection, and defining f (Z) as a material performance distribution function of the gradient middle layer along the thickness, so that the material performance of the ith discrete layer is f { h1+ (i +0.5) h2/n) }; the change of the material performance from the target material to the back plate can be realized by changing the thickness of the gradient middle layer and the discrete layer number n; when n is large, the workload of manually selecting a geometric model and endowing the material with the attributes is large, and errors are easy to occur, so that when n is large, a cyclic program is written by adopting an APDL (ANSYS Parametric Design Language) Language in ANSYS software to endow the material with the gradient interlayer attributes.
(203) adding material properties of the Co target: selecting a geometric model with a Z value in the range of [ h1+ h2, h1+ h2+ h3] through geometric position selection, and endowing the cobalt material with attributes;
(204) Selecting a unit: calculating and simulating residual stress of the target backboard component by adopting a thermal-structure indirect coupling method, namely performing thermal analysis to obtain temperature field distribution of the target backboard component, and performing structural field analysis to obtain residual stress distribution; selecting a PLANE55 unit for thermal analysis, and performing structural analysis on a PLANE42 unit;
(205) Generating a finite element model: and generating a finite element model of the target back plate assembly by adopting a triangular unit and free mesh division mode.
compared with the prior art, the invention has the beneficial effects that:
1. The invention takes a Co target material/gradient intermediate layer/Cu backboard component prepared by diffusion welding as a research object, the gradient intermediate layer is dispersed into a multi-layer structure with more limitation by adopting a method of dispersing the gradient intermediate layer, and the material performance in each layer is uniformly distributed along the thickness. By changing the thickness of the gradient middle layer and the discrete layer number n, the change of the material performance from the target material to the back plate can be realized, namely the finite element numerical simulation of the gradient material is realized.
2. by adopting the simulation method, the temperature field distribution and the residual stress distribution condition of the target backboard component containing the intermediate layer under a certain test condition can be obtained, and a theoretical basis is provided for researching the influence of the gradient intermediate layer on the welding residual stress of the target backboard component.
3. In the simulation method, the welding residual stress of the target component containing the middle layer is compared with the maximum residual stress standard value designed by the target. If the thickness is smaller than the maximum residual stress standard value, the gradient intermediate layer with the thickness and the discrete layers is used for guiding industrial production; and if the residual stress of the target material assembly is larger than the maximum residual stress standard value, increasing the thickness of the middle layer and recalculating and simulating discrete layers until the calculated residual stress meets the design standard.
4. The calculation simulation method can be used for the application of the gradient material in the manufacturing of the target assembly and the research on the design of the gradient material, and can save the experiment cost and shorten the product design period.
Drawings
FIG. 1 is a schematic flow chart of a simulation method according to the present invention.
FIG. 2 is a three-dimensional geometric model of the Co target/gradient interlayer/Cu backplate assembly in the method of the present invention.
FIG. 3 is a graphical illustration of the dispersion of the gradient interlayer material performance function.
Fig. 4 is a schematic diagram of the boundary conditions of the Co target/gradient interlayer/Cu backing plate assembly.
FIG. 5 is a graph of the effect of an Al interlayer on diffusion welding residual stress; wherein: (a) an Al intermediate layer; (b) without an intermediate layer of Al.
FIG. 6 is a schematic diagram of a Co/interlayer/Cu target assembly.
Fig. 7 is a graph of the residual stress distribution of the target assembly when n is 1.
fig. 8 shows the distribution of the welding residual stress of the target assembly when n is 2.
Detailed Description
The invention is described in detail below with reference to the figures and examples.
Example 1:
fig. 1 shows a finite element simulation method of residual welding stress of a target assembly containing an intermediate layer, which takes a Co/gradient intermediate layer/Cu target backing plate assembly structure as a research object to research the residual welding stress of the target assembly with and without the intermediate layer, and specifically comprises the following steps:
(1) After the structure of the target back plate assembly is simplified, establishing a geometric model of the target back plate assembly according to the steps (101) to (103) as shown in fig. 2;
(101) Establishing a Cu back plate model: establishing a Cu back plate with the radius of 50mm and the thickness of 7.4mm by taking the circle center of the lower bottom surface of the Cu back plate as a coordinate origin, taking the radial direction of the target back plate assembly structure as the X-axis direction and the thickness direction as the Z-axis direction;
(102) establishing a gradient interlayer model: in the embodiment, an Al intermediate layer is applied, the radius and the thickness of the intermediate layer are respectively 45mm and 1.5mm, and the number n of discrete layers is 1, namely only one layer; (this step is omitted when no Al interlayer is investigated);
(103) establishing a target model: establishing a target material structure model with the radius of 45mm and the thickness of 2.3 mm;
(2) Generating a finite element model of the target material back plate assembly;
(3) The boundary condition application is shown in fig. 4 and comprises a step (301) and a step (302):
(301) temperature load application: setting the temperature of the target material back plate assembly at 400 ℃ when the welding is finished, and cooling to 25 ℃ within 60 min; setting the reference temperature to be 400 ℃, wherein the state when welding is finished is a zero-stress state;
(302) application of structural constraints: the target back plate assembly has the characteristic of axial symmetry, so that UX-0 displacement constraint is applied at the position of a symmetry axis, namely X-0, and UZ-0 displacement constraint is applied at the position of the lower bottom surface of the Cu back plate, namely Z-0;
(4) And calculating and solving to obtain the temperature field distribution and the residual stress distribution of the target material back plate assembly. The weld residual stress with and without the intermediate layer is shown in fig. 5. When the Al intermediate layer is not arranged, the residual stress of the target back plate diffusion welding assembly is large, and the maximum residual stress is 142 MP; the maximum residual stress of the target component with the Al intermediate layer is 126 MPa.
In the step (1), the method for simplifying the structure of the target backing plate assembly comprises the following steps: the actual structure of the target back plate assembly is complex, and the target back plate diffusion welding assembly needs to be simplified in order to simplify finite element simulation and not influence the research precision: (1) ignoring cooling channel structures in the backplate; (2) in order to facilitate the diffusion process, a sawtooth structure is prepared at a diffusion bonding interface in actual production, and the sawtooth structure at the interface is neglected in the research of the influence of a gradient intermediate layer on welding residual stress and is set as a straight interface; (3) the Co target backboard component structure has an axisymmetric structure, so that one meridian plane of the target backboard component structure is selected for two-dimensional plane analysis instead of three-dimensional analysis.
In the step (2), the generating of the finite element model of the target backing plate assembly includes the following steps (201) to (205):
(201) Cu backboard material property addition: selecting a geometric model with Z value within the range of [0, 7.4mm ] through geometric position selection, and endowing the copper material with properties;
(202) Material property addition of the gradient intermediate layer: selecting a geometric model, namely an ith discrete layer, with Z being in the range of [ h1+ i h2/n, h1+ (i +1) h2/n ] (1 is not less than i < n) through geometric position selection, and defining f (Z) as a material performance distribution function of the gradient middle layer along the thickness as shown in figure 3, so that the material performance of the ith discrete layer is f { h1+ (i +0.5) h2/n) }; by changing the thickness of the gradient intermediate layer and the number n of discrete layers, the change of the rate of change of the material properties from the target to the backing plate can be realized. In this embodiment, the intermediate layer is Al and n is 1.
(203) Adding material properties of the Co target: selecting a geometric model with Z value in the range of [8.9mm, 11.2mm ] through geometric position selection, and endowing cobalt material with properties;
(204) Selecting a unit: calculating and simulating residual stress of the target backboard component by adopting a thermal-structure indirect coupling method, namely performing thermal analysis to obtain temperature field distribution of the target backboard component, and performing structural field analysis to obtain residual stress distribution; selecting a PLANE55 unit for thermal analysis, and performing structural analysis on a PLANE42 unit;
(205) generating a finite element model: and generating a finite element model of the target back plate assembly by adopting a triangular unit and free mesh division mode.
example 2:
the method is characterized in that a Co/middle layer/Cu target back plate assembly structure is taken as a research object, and the size of the welding residual stress of the target assembly when n is 1 and n is 2 is researched, and the method specifically comprises the following steps:
(1) After the structure of the target back plate assembly is simplified, a geometric model of the target back plate assembly is established according to the steps (101) to (103), and the Co/gradient intermediate layer/Cu is shown in FIG. 6;
(101) establishing a Cu back plate model: establishing a Cu back plate with the radius of 270mm and the thickness of 12.7mm by taking the circle center of the lower bottom surface of the Cu back plate as a coordinate origin, taking the radial direction of the target back plate assembly structure as the X-axis direction and the thickness direction as the Z-axis direction;
(102) establishing a gradient interlayer model: in this example, the intermediate layer was a 4mm thick Al intermediate layer when n is 1, a 2mm thick Al layer and a 2mm thick Zn layer when n is 2, and the radius of the intermediate layer was 225 mm;
(103) establishing a target model: establishing a target structure model with the radius of 225mm and the thickness of 12.7 mm;
(2) generating a finite element model of the target material back plate assembly;
(3) the boundary condition application is shown in fig. 4 and comprises a step (301) and a step (302):
(301) temperature load application: setting the temperature of the target material back plate assembly at 400 ℃ when the welding is finished, and cooling to 25 ℃ within 60 min; setting the reference temperature to be 400 ℃, wherein the state when welding is finished is a zero-stress state;
(302) Application of structural constraints: the target back plate assembly has the characteristic of axial symmetry, so that UX-0 displacement constraint is applied at the position of a symmetry axis, namely X-0, and UZ-0 displacement constraint is applied at the position of the lower bottom surface of the Cu back plate, namely Z-0;
(4) And calculating and solving to obtain the temperature field distribution and the residual stress distribution of the target material back plate assembly. When n is 1, the welding residual stress of the target assembly is shown in fig. 7, and the maximum residual stress is 80 MPa; the welding residual stress of the target assembly when n is 2 is shown in fig. 8, and the maximum residual stress is 68 MPa.
in the step (1), the method for simplifying the structure of the target backing plate assembly comprises the following steps: the actual structure of the target back plate assembly is complex, and the target back plate diffusion welding assembly needs to be simplified in order to simplify finite element simulation and not influence the research precision: (1) ignoring cooling channel structures in the backplate; (2) in order to facilitate the diffusion process, a sawtooth structure is prepared at a diffusion bonding interface in actual production, and the sawtooth structure at the interface is neglected in the research of the influence of a gradient intermediate layer on welding residual stress and is set as a straight interface; (3) the Co target backboard component structure has an axisymmetric structure, so that one meridian plane of the target backboard component structure is selected for two-dimensional plane analysis instead of three-dimensional analysis.
In the step (2), the generating of the finite element model of the target backing plate assembly includes the following steps (201) to (205):
(201) cu backboard material property addition: selecting a geometric model with Z value within the range of [0, 12.7mm ] through geometric position selection, and endowing the copper material with properties;
(202) material property addition of the gradient intermediate layer: when n is 1, a geometric model with Z value in the range of [12.7mm, 16.7mm ] is selected to endow Al material with properties. When n is 2, selecting a geometric model with Z value in the range of [12.7mm and 14.7mm ] to endow Al material properties, and selecting a geometric model in the range of [14.7mm and 16.7mm ] to endow Zn material properties.
(203) adding material properties of the Co target: selecting a geometric model with Z value in the range of [16.7mm, 29.4mm ] through geometric position selection, and endowing cobalt material with properties;
(204) selecting a unit: calculating and simulating residual stress of the target backboard component by adopting a thermal-structure indirect coupling method, namely performing thermal analysis to obtain temperature field distribution of the target backboard component, and performing structural field analysis to obtain residual stress distribution; selecting a PLANE55 unit for thermal analysis, and performing structural analysis on a PLANE42 unit;
(205) generating a finite element model: and generating a finite element model of the target back plate assembly by adopting a triangular unit and free mesh division mode.
Claims (6)
1. a finite element simulation method for stress in a target back plate assembly with an intermediate layer is characterized by comprising the following steps: the finite element simulation method comprises the following steps:
(1) after the structure of the target back plate assembly is simplified, establishing a geometric model of the target back plate assembly according to the steps (101) to (103);
(101) establishing a Cu back plate model: establishing a Cu back plate with radius r1 and thickness h1 by taking the circle center of the lower bottom surface of the Cu back plate as a coordinate origin, the radial direction of the target back plate assembly structure as an X-axis direction and the thickness direction as a Z-axis direction;
(102) Establishing a gradient interlayer model: the radius and the thickness of the gradient middle layer are r2 and h2 respectively, the gradient middle layer is dispersed into n layers of structures along the thickness direction, the thickness of each layer of structure is h2/n, n is more than or equal to 1, and different materials are selected for each layer of structure in the gradient middle layer;
(103) establishing a target model: establishing a target structure model with radius r2 and thickness h 3;
(2) Generating a finite element model of the target material back plate assembly;
(3) and (3) applying a boundary condition, comprising the steps (301) and (302):
(301) temperature load application: setting the temperature of the target material back plate assembly at 400 ℃ when the welding is finished, and cooling to 25 ℃ within 60 min; setting the reference temperature to be 400 ℃, namely setting the state when welding is finished to be a zero-stress state;
(302) Application of structural constraints: the target back plate assembly has the characteristic of axial symmetry, so that UX-0 displacement constraint is applied at the position of a symmetry axis, namely X-0, and UZ-0 displacement constraint is applied at the position of the lower bottom surface of the Cu back plate, namely Z-0;
(4) and calculating and solving to obtain the temperature field distribution and the residual stress distribution of the target material back plate assembly.
2. A finite element simulation method of stress in a target backing plate assembly with an intermediate layer according to claim 1, wherein: the target material back plate assembly is of a sandwich structure prepared by adopting a diffusion welding method and comprises a Co target material, a gradient intermediate layer and a Cu back plate which are sequentially compounded.
3. A finite element simulation method of stress in a target backing plate assembly with an intermediate layer according to claim 1, wherein: in the step (1), the method for simplifying the structure of the target back plate assembly comprises the following steps: (1) ignoring cooling channel structures in the backplate; (2) neglecting the sawtooth structure at the interface and setting the sawtooth structure as a straight interface; (3) the Co target backboard component structure has an axisymmetric structure, so that one meridian plane of the target backboard component structure is selected for two-dimensional plane analysis instead of three-dimensional analysis.
4. A finite element simulation method of stress in a target backing plate assembly with an intermediate layer according to claim 1, wherein: in the step (2), the generating of the finite element model of the target backing plate assembly comprises the following steps (201) to (205):
(201) Cu backboard material property addition: selecting a geometric model with Z value in the range of [0, h1] through geometric position selection, and endowing the copper material with attributes;
(202) material property addition of the gradient intermediate layer: selecting a geometric model, namely an ith discrete layer, with Z being in the range of [ h1+ i h2/n, h1+ (i +1) h2/n ] (1 is not less than i < n) through geometric position selection, and defining f (Z) as a material performance distribution function of the gradient middle layer along the thickness, so that the material performance of the ith discrete layer is f { h1+ (i +0.5) h2/n) };
(203) adding properties of a Co target material: selecting a geometric model with a Z value in the range of [ h1+ h2, h1+ h2+ h3] through geometric position selection, and endowing the cobalt material with attributes;
(204) selecting a unit: calculating and simulating residual stress of the target backboard component by adopting a thermal-structure indirect coupling method, namely performing thermal analysis to obtain temperature field distribution of the target backboard component, and performing structural field analysis to obtain residual stress distribution; selecting a PLANE55 unit for thermal analysis, and performing structural analysis on a PLANE42 unit;
(205) generating a finite element model: and generating a finite element model of the target back plate assembly by adopting a triangular unit and free mesh division mode.
5. a finite element simulation method of stress in a target backing plate assembly with an intermediate layer according to claim 4, wherein: in the step (202), when n is larger, a circulation program is written by an APDL language in ANSYS software to endow the gradient interlayer material with the attribute.
6. a finite element simulation method of stress in a target backing plate assembly with an intermediate layer according to claim 1, wherein: in the step (4), judging whether the calculated welding residual stress of the target assembly containing the middle layer is smaller than a designed maximum residual stress standard value of the target; if the thickness is smaller than the maximum residual stress standard value, the gradient intermediate layer with the thickness and the discrete layers is used for guiding industrial production; and (4) if the calculated residual stress of the target assembly with the intermediate layer is greater than the maximum residual stress standard value, repeating the processes in the steps (1) to (4), and increasing the thickness of the intermediate layer and the discrete layer number n until the residual stress calculated in a simulation mode is less than the maximum residual stress standard value.
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