CN203782228U - Rectangular planar magnetron sputtering target and magnetron sputtering target device - Google Patents
Rectangular planar magnetron sputtering target and magnetron sputtering target device Download PDFInfo
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- CN203782228U CN203782228U CN201420197329.7U CN201420197329U CN203782228U CN 203782228 U CN203782228 U CN 203782228U CN 201420197329 U CN201420197329 U CN 201420197329U CN 203782228 U CN203782228 U CN 203782228U
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- magnetron sputtering
- sputtering target
- rectangular planar
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- planar magnetron
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Abstract
The utility model relates to a rectangular planar magnetron sputtering target and a magnetron sputtering target device. The rectangular planar magnetron sputtering target comprises a first part and a second part, wherein the first part is correspondingly located at two end regions; the second part is correspondingly located at a region between the two end regions; the second part is thicker than the first part. By using the rectangular planar magnetron sputtering target, the problem that the whole rectangular planar magnetron sputtering target is wasted because of local premature etching can be avoided, and the utilization ratio of the whole rectangular planar magnetron sputtering target is increased.
Description
Technical field
The disclosure relates to electronic device manufacturing technology field, in particular to a kind of Rectangular Planar Magnetron Sputtering Target material and magnetron sputtering target assembly.
Background technology
Magnetron sputtering technique has developed into very important technology in industrial plated film, has the features such as high speed, low temperature due to it, more and more receives the concern of the parties concerned.For example, magnetron sputtering technique has been applied and has been extended to much production and scientific research field, is all widely used aspect many at electronics, optics, function of surface film, thin-film light emitting material etc.The transparent conducting glass of particularly preparing with magnetron sputtering technique is widely used in flat-panel monitor, solar cell, building glass, microwave and radio-frequency shielding fence and device, sensor field at present.
But still there are some shortcomings in magnetron sputtering target assembly of the prior art.For example, due in magnetron sputtering technology, the magnetic field adopting not completely uniformly, but not plasma in uniform magnetic field region is known from experience and is produced local contraction effect, make that the sputter etch rate of local location on target becomes greatly, consequently can within a short period of time the regional area etching of target be worn, cause the utilization ratio of target generally only 20%～30%.
For example, in Fig. 1 and Fig. 2, be the structural representation for the rectangle plane target of magnetron sputtering in prior art.In figure, 1-7 is target, and 8-9 is the magnet that is positioned at target lower end.The target 3-7 of region intermediate is positioned at uniform magnetic field region, and the target 1-2 of two end regions is positioned at non-uniform magnetic-field region.Want fast a lot of owing to being positioned at the target in non-uniform magnetic-field region with respect to the target etching speed that is positioned at uniform magnetic field region, cause target etched the wearing at first of two end regions, and now the target of region intermediate yet etching to the greatest extent, cause a whole set of Rectangular Planar Magnetron Sputtering Target material waste 7%～10%.
The utilization ratio of target is low, can cause on the one hand the waste of target, can cause on the other hand changing the shortening of target cycle, and the Homes Using TV of equipment is reduced, and affects the production capacity of whole production line.
The low shortcoming of utilization ratio is for common material, as the sputter cost of the materials such as TiN does not have much affect.But, for some as the sputter of the high purity alloy materials such as the precious metal material such as gold and silver, platinum or Ti3Al, and some are as the preparation of the functional membranes such as ITO film, electromagnetic membrane, superconducting film, electron membrane, dielectric film, needed target is all extremely expensive, and the utilization ratio of target can increase production cost undoubtedly to a great extent.
Therefore, improve the utilization ratio of Rectangular Planar Magnetron Sputtering Target material, reduce the waste of target, quite important for reducing production costs.
Summary of the invention
For some or all of problem of the prior art, the application discloses a kind of Rectangular Planar Magnetron Sputtering Target material and magnetron sputtering target assembly, thereby improves the utilization ratio of a whole set of Rectangular Planar Magnetron Sputtering Target material.
Other characteristics of the present disclosure and advantage will become obviously by detailed description below, or the partly acquistion by practice of the present disclosure.
According to an aspect of the present disclosure, a kind of Rectangular Planar Magnetron Sputtering Target material, comprising:
First part, correspondence is positioned at the part of its two end regions;
Second section, the part in correspondence region between described two end regions;
The thickness of described second section is greater than the thickness of described first part.
The difference of the thickness of described second section and first part can make in magnetron sputtering process, and described second section does not reach etching Schwellenwert prior to described first part.
The difference of the thickness of described second section and first part can make in magnetron sputtering process, and described second section and described first part reach etching Schwellenwert simultaneously.
Described second section is than the thick 1-2mm of described first part.
The thickness of described first part is 7-9mm, and the thickness of described second section is 8-11mm.
Described Rectangular Planar Magnetron Sputtering Target material is integral type structure.
Described first part and second section are absolute construction.
According to another aspect of the present disclosure, a kind of Rectangular Planar Magnetron Sputtering Target material, comprising:
First part, correspondence is positioned at the part in uniform magnetic field region;
Second section, correspondence is positioned at the part in non-uniform magnetic-field region;
The thickness of described second section is greater than the thickness of described first part.
According to of the present disclosure more on the one hand, a kind of magnetron sputtering target assembly, comprising: backboard and paste the Rectangular Planar Magnetron Sputtering Target material in described back plate surface; Described Rectangular Planar Magnetron Sputtering Target material is above-mentioned any one Rectangular Planar Magnetron Sputtering Target material.
Described back plate thickness is about 8mm.
As shown from the above technical solution, in Rectangular Planar Magnetron Sputtering Target material provided by the utility model and magnetron sputtering target assembly, suitably be greater than the thickness of the part (being first part) that correspondence is positioned at uniform magnetic field region by the thickness that makes Rectangular Planar Magnetron Sputtering Target material correspondence be positioned at the part (being first part) in non-uniform magnetic-field region, thereby reduce part and the corresponding partial etching that is positioned at uniform magnetic field region that Rectangular Planar Magnetron Sputtering Target material correspondence is positioned at non-uniform magnetic-field region and worn the poor of time used, avoid occurring wearing and causing the waste of a whole set of Rectangular Planar Magnetron Sputtering Target material due to the too early etching in part, improve the utilization ratio of a whole set of Rectangular Planar Magnetron Sputtering Target material.
Brief description of the drawings
By describe its example embodiment in detail with reference to accompanying drawing, above-mentioned and further feature of the present disclosure and advantage will become more obvious.
Fig. 1 and Fig. 2 are the structural representation of Rectangular Planar Magnetron Sputtering Target material in prior art.
Fig. 3 and Fig. 4 are the structural representation of Rectangular Planar Magnetron Sputtering Target material in disclosure example embodiment.
In figure, 1-7: target; 8-9: magnet.
Embodiment
Referring now to accompanying drawing, example embodiment is more fully described.But example embodiment can be implemented in a variety of forms, and should not be understood to be limited to embodiment set forth herein; On the contrary, provide these embodiments to make the disclosure by comprehensive and complete, and the design of example embodiment is conveyed to those skilled in the art all sidedly.In the drawings, for clear, exaggerated the thickness of region and layer.Identical in the drawings Reference numeral represents same or similar structure, thereby will omit their detailed description.
In addition, described feature, structure or characteristic can be combined in one or more embodiment in any suitable manner.In the following description, thus provide many details to provide fully understanding embodiment of the present disclosure.But, one of skill in the art will appreciate that and can put into practice technical scheme of the present disclosure and there is no one or more in described specific detail, or can adopt other method, constituent element, material etc.In other cases, be not shown specifically or describe known features, material or operation to avoid fuzzy each side of the present disclosure.
First a kind of Rectangular Planar Magnetron Sputtering Target material is provided in this example embodiment, and its structure is as shown in Fig. 3 and Fig. 4.In figure, 1-7 is target, and 8-9 is the magnet that is positioned at target below, for generation of magnetic field, thereby utilizes magnetic field to improve plasma density to increase sputtering raste to the constraint of charged particle.Conventionally the magnetic field that magnet produces is not completely uniform, the first part of Rectangular Planar Magnetron Sputtering Target material, and the target 3-7 of region intermediate, is positioned at uniform magnetic field region; And the second section of Rectangular Planar Magnetron Sputtering Target material, i.e. the target 1-2 of two end regions, is positioned at non-uniform magnetic-field region.
One of key distinction of the disclosure and prior art is, in the Rectangular Planar Magnetron Sputtering Target material that this example embodiment provides, the thickness of second section is greater than the thickness of first part, thereby reduce part and the corresponding partial etching that is positioned at uniform magnetic field region that Rectangular Planar Magnetron Sputtering Target material correspondence is positioned at non-uniform magnetic-field region and worn the poor of time used, avoid occurring wearing and causing the waste of a whole set of Rectangular Planar Magnetron Sputtering Target material due to the too early etching in part, improved the utilization ratio of a whole set of Rectangular Planar Magnetron Sputtering Target material.
The difference of the thickness of second section and first part can specifically be set as required.But typically, because the area of first part is generally much larger than the area of second section; Therefore, preferred, the difference of the thickness of second section and first part at least can make in magnetron sputtering process, and second section does not reach etching Schwellenwert prior to first part.Optimum, the difference of the thickness of second section and first part can make in magnetron sputtering process, and second section and first part reach etching Schwellenwert simultaneously, thereby can promote to the full extent the utilization ratio of Rectangular Planar Magnetron Sputtering Target material.
The specific implementation of the difference of the thickness of second section and first part can be both the thickness that increases second section, can be also the thickness that reduces first part, or both, in the disclosure, do not do particular determination.
Taking a kind of conventional Rectangular Planar Magnetron Sputtering Target material as example, the end position at two minor face places of rectangle is non-uniform magnetic-field region, and described second section is the target of the end at rectangle minor face place.Generally speaking, the thickness of first part is 7-9mm, and contriver finds through many experiments, and at second section, during than the thick 1-2mm of first part, the utilization ratio of Rectangular Planar Magnetron Sputtering Target material is the highest.For example, the thickness of first part is 8mm, and the thickness of second section is 9-10mm, like this, in magnetron sputtering membrane process, the target of two end regions and the target of region intermediate can reach etching Schwellenwert substantially simultaneously, thereby improve target utilization, reduced production cost.Particularly, the Rectangular Planar Magnetron Sputtering Target material that adopts this example embodiment to provide, can improve 7-10% by the utilization ratio of Rectangular Planar Magnetron Sputtering Target material, therefore can effectively reduce production cost.
In addition, about the structure of Rectangular Planar Magnetron Sputtering Target material, it can be both integral structure, and above-mentioned first part and second section are as a whole; It can be also split-type structural, and above-mentioned first part and second section are absolute construction.Than integral structure, split-type structural can produced respectively shape relatively rule first part and second section after, then splicing become Rectangular Planar Magnetron Sputtering Target material, thereby can reduce preparation technology's difficulty.
Further, in this example embodiment, also provide a kind of magnetron sputtering target assembly.This magnetron sputtering target assembly mainly comprises backboard and pastes the Rectangular Planar Magnetron Sputtering Target material in back plate surface.The main improvements of this magnetron sputtering target assembly are, the Rectangular Planar Magnetron Sputtering Target material adopting is above-mentioned any one Rectangular Planar Magnetron Sputtering Target material.In addition, the thickness of its mesonotal shield and material can specifically be set according to the actual requirements, and for example, in prior art, what conventionally adopt is the copper backboard that 8mm is thick.Certainly, the magnetron sputtering target assembly providing in this example embodiment can also comprise magnetic conduction substrate, propulsion source etc., and this is all prior art, does not repeat them here.
According to above-mentioned example embodiment, in Rectangular Planar Magnetron Sputtering Target material provided by the utility model and magnetron sputtering target assembly, suitably be greater than correspondence and be positioned at the thickness of the part in uniform magnetic field region by the thickness that makes Rectangular Planar Magnetron Sputtering Target material correspondence be positioned at the part in non-uniform magnetic-field region, thereby reduce part and the corresponding partial etching that is positioned at uniform magnetic field region that Rectangular Planar Magnetron Sputtering Target material correspondence is positioned at non-uniform magnetic-field region and worn the poor of time used, avoid occurring wearing and causing the waste of a whole set of Rectangular Planar Magnetron Sputtering Target material due to the too early etching in part, improve the utilization ratio of a whole set of Rectangular Planar Magnetron Sputtering Target material.
Below illustrate particularly and described illustrative embodiments of the present disclosure.Should be appreciated that, the disclosure is not limited to disclosed embodiment, and on the contrary, disclosure intention contains various amendments and the equivalent arrangements in the spirit and scope that are included in claims.
Claims (10)
1. a Rectangular Planar Magnetron Sputtering Target material, comprises:
First part, correspondence is positioned at the part of its two end regions;
Second section, the part in correspondence region between described two end regions;
It is characterized in that:
The thickness of described second section is greater than the thickness of described first part.
2. Rectangular Planar Magnetron Sputtering Target material according to claim 1, is characterized in that, the difference of the thickness of described second section and first part can make in magnetron sputtering process, and described second section does not reach etching Schwellenwert prior to described first part.
3. Rectangular Planar Magnetron Sputtering Target material according to claim 2, is characterized in that, the difference of the thickness of described second section and first part can make in magnetron sputtering process, and described second section and described first part reach etching Schwellenwert simultaneously.
4. according to the Rectangular Planar Magnetron Sputtering Target material described in claim 1-3 any one, it is characterized in that, described second section is than the thick 1-2mm of described first part.
5. Rectangular Planar Magnetron Sputtering Target material according to claim 4, is characterized in that, the thickness of described first part is 7-9mm, and the thickness of described second section is 8-11mm.
6. Rectangular Planar Magnetron Sputtering Target material according to claim 7, is characterized in that, described Rectangular Planar Magnetron Sputtering Target material is integral type structure.
7. Rectangular Planar Magnetron Sputtering Target material according to claim 1, is characterized in that, described first part and second section are absolute construction.
8. a Rectangular Planar Magnetron Sputtering Target material, comprising:
First part, correspondence is positioned at the part in uniform magnetic field region;
Second section, correspondence is positioned at the part in non-uniform magnetic-field region;
It is characterized in that:
The thickness of described second section is greater than the thickness of described first part.
9. a magnetron sputtering target assembly, comprising:
Backboard and paste the Rectangular Planar Magnetron Sputtering Target material in described back plate surface;
It is characterized in that:
Described Rectangular Planar Magnetron Sputtering Target material is the Rectangular Planar Magnetron Sputtering Target material as described in claim 1-8 any one.
10. magnetron sputtering target assembly according to claim 9, is characterized in that, described back plate thickness is 8mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420197329.7U CN203782228U (en) | 2014-04-22 | 2014-04-22 | Rectangular planar magnetron sputtering target and magnetron sputtering target device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420197329.7U CN203782228U (en) | 2014-04-22 | 2014-04-22 | Rectangular planar magnetron sputtering target and magnetron sputtering target device |
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| CN203782228U true CN203782228U (en) | 2014-08-20 |
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| CN201420197329.7U Expired - Fee Related CN203782228U (en) | 2014-04-22 | 2014-04-22 | Rectangular planar magnetron sputtering target and magnetron sputtering target device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107058961A (en) * | 2017-04-27 | 2017-08-18 | 武汉华星光电技术有限公司 | A kind of physical sputtering film formation device and method |
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2014
- 2014-04-22 CN CN201420197329.7U patent/CN203782228U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107058961A (en) * | 2017-04-27 | 2017-08-18 | 武汉华星光电技术有限公司 | A kind of physical sputtering film formation device and method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140820 Termination date: 20160422 |
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| CF01 | Termination of patent right due to non-payment of annual fee |