TW201246924A - Solid-state imaging element, driving method, and electronic apparatus - Google Patents
Solid-state imaging element, driving method, and electronic apparatus Download PDFInfo
- Publication number
- TW201246924A TW201246924A TW100141820A TW100141820A TW201246924A TW 201246924 A TW201246924 A TW 201246924A TW 100141820 A TW100141820 A TW 100141820A TW 100141820 A TW100141820 A TW 100141820A TW 201246924 A TW201246924 A TW 201246924A
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Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims description 14
- 238000012546 transfer Methods 0.000 claims abstract description 158
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 238000007667 floating Methods 0.000 claims description 58
- 238000009792 diffusion process Methods 0.000 claims description 57
- 239000007787 solid Substances 0.000 claims description 8
- 238000004364 calculation method Methods 0.000 claims description 2
- 230000002496 gastric effect Effects 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 abstract description 12
- 238000012545 processing Methods 0.000 description 29
- 238000010586 diagram Methods 0.000 description 26
- 239000003990 capacitor Substances 0.000 description 18
- 238000009825 accumulation Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 12
- 238000009826 distribution Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 5
- 238000005096 rolling process Methods 0.000 description 5
- 230000000875 corresponding effect Effects 0.000 description 4
- 238000013500 data storage Methods 0.000 description 4
- 238000004904 shortening Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000002596 correlated effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
- H01L27/14656—Overflow drain structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010279509A JP2012129799A (ja) | 2010-12-15 | 2010-12-15 | 固体撮像素子および駆動方法、並びに電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201246924A true TW201246924A (en) | 2012-11-16 |
Family
ID=46233931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100141820A TW201246924A (en) | 2010-12-15 | 2011-11-16 | Solid-state imaging element, driving method, and electronic apparatus |
Country Status (5)
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6041500B2 (ja) * | 2012-03-01 | 2016-12-07 | キヤノン株式会社 | 撮像装置、撮像システム、撮像装置の駆動方法、撮像システムの駆動方法 |
| JP2014039159A (ja) * | 2012-08-16 | 2014-02-27 | Sony Corp | 固体撮像装置および駆動方法、並びに電子機器 |
| EP2911384A4 (en) * | 2012-10-30 | 2015-11-04 | Shimadzu Corp | LINEAR IMAGE SENSOR AND CONTROL METHOD THEREFOR |
| JP6195728B2 (ja) * | 2013-04-30 | 2017-09-13 | 富士フイルム株式会社 | 固体撮像素子および撮像装置 |
| FR3010229B1 (fr) * | 2013-08-30 | 2016-12-23 | Pyxalis | Capteur d'image avec bruit ktc reduit |
| EP4311252A3 (en) * | 2013-11-18 | 2024-04-10 | Nikon Corporation | Solid-state image sensor and image-capturing device |
| JP6377947B2 (ja) | 2014-04-21 | 2018-08-22 | ルネサスエレクトロニクス株式会社 | 固体撮像素子および電子機器 |
| JP6395482B2 (ja) * | 2014-07-11 | 2018-09-26 | キヤノン株式会社 | 光電変換装置、および、撮像システム |
| JP2016021445A (ja) | 2014-07-11 | 2016-02-04 | キヤノン株式会社 | 光電変換装置、および、撮像システム |
| CN111952325A (zh) * | 2014-07-25 | 2020-11-17 | 株式会社半导体能源研究所 | 成像装置 |
| JP6425448B2 (ja) | 2014-07-31 | 2018-11-21 | キヤノン株式会社 | 光電変換装置、および、撮像システム |
| JP6478600B2 (ja) * | 2014-12-04 | 2019-03-06 | キヤノン株式会社 | 撮像装置およびその制御方法 |
| EP3252818B1 (en) * | 2015-01-29 | 2019-11-20 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and electronic device |
| CN106470321B (zh) * | 2015-08-21 | 2020-03-31 | 比亚迪股份有限公司 | 图像传感器及图像传感器的读取方法 |
| US9736413B1 (en) * | 2016-02-03 | 2017-08-15 | Sony Corporation | Image sensor and electronic device with active reset circuit, and method of operating the same |
| JP6573186B2 (ja) * | 2016-04-21 | 2019-09-11 | パナソニックＩｐマネジメント株式会社 | 撮像装置及びそれを備えたカメラシステム |
| JP2018060980A (ja) * | 2016-10-07 | 2018-04-12 | キヤノン株式会社 | 撮像表示装置及びウェアラブルデバイス |
| US10623655B2 (en) * | 2018-05-30 | 2020-04-14 | Semiconductor Components Industries, Llc | Image sensors with light flicker mitigation capabilities |
| CN112291492B (zh) * | 2019-07-25 | 2024-03-29 | 比亚迪半导体股份有限公司 | 去除图像传感器噪声的方法和装置、存储介质 |
| CN113784062B (zh) * | 2021-08-25 | 2022-04-26 | 中国科学院长春光学精密机械与物理研究所 | 非连续成像cmos图像传感器稳定图像控制系统及方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3792628B2 (ja) * | 2002-09-02 | 2006-07-05 | 富士通株式会社 | 固体撮像装置及び画像読み出し方法 |
| JP4316478B2 (ja) * | 2004-11-18 | 2009-08-19 | シャープ株式会社 | 画像センサおよびその駆動方法、並びに走査駆動器 |
| JP4325557B2 (ja) * | 2005-01-04 | 2009-09-02 | ソニー株式会社 | 撮像装置および撮像方法 |
| JP5101946B2 (ja) * | 2007-08-03 | 2012-12-19 | キヤノン株式会社 | 撮像装置及び撮像システム |
| US8223235B2 (en) * | 2007-12-13 | 2012-07-17 | Motorola Mobility, Inc. | Digital imager with dual rolling shutters |
| JP5215262B2 (ja) * | 2009-02-03 | 2013-06-19 | オリンパスイメージング株式会社 | 撮像装置 |
| US20100271517A1 (en) * | 2009-04-24 | 2010-10-28 | Yannick De Wit | In-pixel correlated double sampling pixel |
| JP2010268079A (ja) * | 2009-05-12 | 2010-11-25 | Olympus Imaging Corp | 撮像装置、撮像装置の製造方法 |
-
2010
- 2010-12-15 JP JP2010279509A patent/JP2012129799A/ja active Pending
-
2011
- 2011-11-16 TW TW100141820A patent/TW201246924A/zh unknown
- 2011-12-05 CN CN2011103994424A patent/CN102572311A/zh active Pending
- 2011-12-05 CN CN201120501646XU patent/CN202395873U/zh not_active Expired - Fee Related
- 2011-12-06 US US13/312,366 patent/US20120154656A1/en not_active Abandoned
- 2011-12-07 KR KR1020110130243A patent/KR20120067286A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120067286A (ko) | 2012-06-25 |
| JP2012129799A (ja) | 2012-07-05 |
| US20120154656A1 (en) | 2012-06-21 |
| CN102572311A (zh) | 2012-07-11 |
| CN202395873U (zh) | 2012-08-22 |
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