TW201243504A - Local site exposure apparatus - Google Patents

Abstract

To adjust the amount of light exposure in each of a number of narrowly defined areas on a substrate surface, improve the uniformity of the residual resist film left after development processing, and suppress variation in the line width and pitch of a wiring pattern. A local site exposure apparatus, comprising: a light source 4 positioned above a substrate transport path 2 and composed of a plurality of light emitting elements L arranged in a direction orthogonal to the substrate transport direction; a light emission drive section 9 capable of selectively driving light emission from one or more of the plurality of light emitting elements that constitute the light source as light emission control units; an illumination intensity detection device 31, which detects the intensity of light irradiated by the light source, and is provided so as to be able to advance and retreat across the substrate width direction in order to follow the light irradiation position of the light source onto the processing target substrate when the processing target substrate is not being transported beneath the light source; and a control section 40 which records the correlation between the intensity detected by the illumination intensity detection device and the drive current value of the light emitting elements in a correlation table T2, and also controls the driving of the light emitting elements by the light emission drive section.

Description

201243504 SUMMARY OF THE INVENTION [Technical Field] The present invention relates to a partial exposure apparatus that performs exposure processing on a substrate to be processed on which a photosensitive film is formed. σ. [Prior Art] [0002] For example, in the manufacture of an FPD (Planar Display), a circuit pattern is formed by a so-called photolithography step. y "if lithography, as disclosed in Patent Document 1, after a predetermined film is formed on a glass substrate or the like, and then a photoresist is applied (hereinafter referred to as a photoresist). The pre-drying treatment of the solvent evaporation (reduced dry film (feeling). Moreover, the photoresist film corresponds to the circuit diagram to process the pattern to form. [0003] However, in the photolithography step As shown in Fig. 15 (8), the photoresist pattern can be slaughtered and the film thickness (thick film portion R1 and film portion R2) can be used. Further, the number of steps and the number of steps can be reduced by using ==== Resistance _ R === ^The half color of the cedar permeable material _ hood half (constrained) exposure processing to [0004] The resistive pattern insulation of the vocabulary of the vocabulary ====:=, electrode 200 , doped non-曰π a, this upper) and n+a-Sl layer 202b (_~, layer 2〇2, and metal layer 2〇3 used to form the electrode. Two 丨ra# 1 genus layer 2〇3 After the photoresist film is formed in the same manner, the photoresist in the photoresist is dried and baked to evaporate, and then the photoresist pattern R is formed by the exposure treatment and the treatment of the shirt. Department 201243504 [0005] After the photoresist pattern R (the thick film portion R1 and the thin film portion Rs) is formed, the photoresist layer R is used as a mask to perform the side of the metal layer 2〇3 ((t ^^b(ashi^ :, J ^ The film thickness is reduced to - about half of the photoresist pattern [3. The second layer of the metal layer 203 or the second layer of the second layer of the second layer is replaced by the photoresist R3 obtained by removing the photoresist R3. [0006] However, when the formation of the 'the photoresist pattern r as described above is formed, there is a _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Fig. 16 (8) shows that the thickness t2 of the photoresist pattern is formed thicker than the thickness U shown in Fig. 15 (8), and the same as the step shown in Fig. 14 is performed with the metal film 203 (Fig. For the ashing process of the entire photoresist pattern R (Z back [0008] " here, as shown in Fig. 16 (c), the film thickness is reduced to about half? The thickness of the removed photoresist film is the same as that of the figure) Therefore, the distance between the photoresist patterns R3 shown in the figure is narrowed to the distance pi of the pair pi « shown in Fig. 15 (6), from which the film R3 is formed for the metal film 2〇3 and & Obtained in Figure 16(e)) The road pattern has a pitch P1 (the line width of the circuit pattern is widened) as shown in Fig. 6 'In the past, the following method was used: for each of the exposure processes, the film thickness measurement was performed by the film thickness measurement. The film thickness is greater than the main value of the open portion of the v-form, and the exposure sensitivity of the portion is increased. Also =, before the exposure process, the photoresist film is heated to pre-bake the volume of the evaporation, so that the heating amount in the plane of the substrate There is a difference between them, so that the exposure at the predetermined part is changed to 201243504 degrees, and the residual film thickness after the development process is adjusted (the plane is specifically used for the pre-baking treatment of the heater. Independently and driven to control 'by this; each shop "warm | more f to 34 compared (plus fresh silk plate [previous technical literature]" [patent literature] [_] Patent Document 1: Sakamoto Special Open 2007 - 158 253 OBJECTIVE [Problem to be Solved by the Invention] [0011] The gentleman 2 adjusts the thickness of the residual film by the heat treatment of the pre-bake, and the height of the pin needs to be divided by the worker. The area is subject to hardware constraints and must be ensured = Predetermined size, this can not be heated ^ fine adjustment range, which was its problems. In addition, when the heating is adjusted by approaching the height of the pin, the production efficiency is low, which is the problem [0012] The problem of the above-mentioned prior art is to provide a partial exposure device in the plane of the substrate. Finely setting each range of exposure, 宽 ^ ΪΪ 歧 歧 歧 歧 歧 歧 歧 歧 并且 并且 并且 并且 并且 并且 并且 并且 抑 抑 抑 线 线 【 【 【 【 【 【 【 【 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部 局部a partial exposure apparatus for performing exposure processing on a predetermined area of the first film formed on the substrate, comprising: a substrate transfer mechanism, forming a substrate transfer path and transporting the substrate in a flat flow along the substrate transfer path water 201243504; Above the substrate transport path, there are a plurality of light-emitting elements that are crossed in the shape of a yoke and a gentleman, and the optical substrate can be moved by the optical film of the light-emitting element 3. Among the plurality of light-emitting elements constituting the light source, one-day-day knife is used as a light-sensing and fresh-keeping position, and selective light-emitting driving is performed; a state in which the illuminance detected by the illumination illuminance detecting mechanism and the related table of the illuminating element are memorized in the direction of the ejecting button, and the illuminating driving portion is controlled to control a predetermined region of the photosensitive film formed on the bobbin. According to the illuminance of the pelvic film, and for the light _ to the viewing area, the driving current value is determined by the required illuminance according to the correlation table, and the illuminating driving portion is controlled according to the _ wide value to make the illuminating element Glowing. The substrate 产 production: i::: degree debt measuring machine, at the same height position as the substrate on the second day: the height position of the light source field can be changed relative to the substrate; the silk 跋 mosquito green money, side Further, the light source is preferably: a substrate detecting mechanism disposed on the upstream side of the light source in the substrate transport path to detect the substrate transported by the substrate transport mechanism; the control portion is based on the substrate Detecting a substrate detection signal and a substrate transport speed to obtain a substrate transport position, and controlling the light-emitting drive portion such that a predetermined area of the photosensitive film formed on the substrate moves relatively under the light source, and the line is arranged in a line Among the plurality of hairpins, only the light-emitting element 201243504 that can reach the predetermined area emits light. [0015] Positional energy = any desired film thickness that is thinner (or thicker) than f. According to the preset exposure amount (illuminance), the film is reduced to the desired portion and the portion is 1=33. If the photo resist film has a different film thickness (thick film thickness of the thick film is thicker than the film thickness) It is possible to prevent the line width and the pitch of the wiring pattern from being disturbed after the development processing. [001^]乍 is saved in the related table, whereby the exposure amount can be adjusted with high precision. Out? ===There is a light diffusing plate; the hair source is expanded from the light source to be controlled::: The width direction of the substrate is divided into multiple drive-in-stream multiple-in-town transfer group, Newcomer_Lighting element [0018] The illumination of the region and the shadow film of the light-emitting device, the "^'," of the scale current value of the localized light-emitting element is determined by the variation of the film thickness in the predetermined area table. In order to cause the light-emitting element to emit light. & When the current value controls the data related to the variation of the thickness of the disk and the value of the drive current, it can be used as the number of degrees and saves the degree (that is, even if the illuminance and the current value of the crane current are not used == 201243504), The invention relates to updating the related data of the illuminance and the driving current value. [Effect of the invention] [0019] According to the present invention, a partial exposure device capable of easily adjusting each of the micro-settings in the substrate plane can be obtained. The light that can be used for the shadow of the shadows is stable and inhibits the line width and spacing of the wiring items. [Embodiment] [0021] Hereinafter, an embodiment of a partial exposure apparatus of the present invention will be described with reference to the drawings. The figure shows a schematic view of a schematic configuration of the entire partial exposure apparatus i of the present invention. Further, the figure is a perspective view of a partial exposure skirt 1 viewed from an angle different from that of Fig. 1. Also, = ί ΐ ί in the A_A direction. In addition, a schematic display of the arrangement of the device 1 of the ® 4 series of light barriers (4). [0022] The partial exposure apparatus i shown in FIG. 1 to FIG. 3 is, for example, not shown in FIG. 4 (8), and is disposed in a horizontal state, and is transported horizontally toward the horizontal direction as a horizontal flow transport). In the shadow step unit. = that is, a photoresist coating device 51 (CT) is disposed, in which a photoresist liquid as a photosensitive film is coated on the processing substrate; and a photoresist on the substrate is dried in a vacuum drying chamber The film (photosensitive film) was dried. And then listen to the county set 53 (PRB), carry out the heat treatment of the substrate to fix the thin film; the cooling device 54 (c〇L), cool it, the light device 55 (EXP), the predetermined circuit _ exposure And the device 56 (DEV) performs development processing on the exposed photoresist film. [0023] The partial exposure device i(ae) of the present invention is disposed, for example, at any position shown in Figs. 4(8) to (.). That is, it is disposed at a predetermined position earlier than the pre-bake device ^ developing device 56 (DEV). Wenjun 杈 and such as the configuration of the wire setting 1 (AE), for example, in the red county blocked continuous 201243504 ίί plate = and all the substrates G of the predetermined area than the other areas, the implementation of the _ domain ( Used to reduce 60 00 in another 'in the following embodiment, _ positive photoresist is the description of the ship, but this local partial exposure can also be applied to the negative wire, at this time, for the photoresist to remain more residual A predetermined exposure is applied to a predetermined area of the film. [0024] The configuration of the partial exposure device 1 (AE) will be described in detail below. As shown in FIG. 3 to FIG. 3, the exposure device 1 (AE) is provided by being laid on the base (10). A plurality of rotations = 20 and a substrate transport path 2 that transports the substrate G in the x direction. The substrate transport path 2 has a plurality of cylindrical rollers 2 that extend in the γ direction, and these plurality of rollers f are vacated in the X direction. The spacers are arranged to respectively spin the soap τ on the base 1 . Further, the plurality of rollers 20 are arranged to be interlocked by a belt (not shown), and the i sub- 20s are connected with a roller driving device such as a motor ( Not shown.) In addition, in Fig. i, the composition of the partial exposure device i is easily explained. With part of the front line

Side roller 20. Further, as shown in the figure, a light irradiation unit 3 for performing partial exposure (UV light emission) on the base G is disposed above the substrate transport path 2. The light irradiation unit 70 3 includes the linear light source 4 in the substrate width direction (γ direction), and the substrate g is transported below the light source 4. The linear light source 4 is a plurality of UV light which emits a predetermined wavelength (for example, close to the g line ^%^^m) 'h line (4〇5nm) 'i line (364nm)) The LED element L is disposed on the circuit board 7. For example, Fig. 5(8) shows a plan view of the circuit board 7 from the bottom. As shown in Fig. 5 (8), a plurality of UV-LED elements L are arranged in three rows on the circuit board 7. Here, as shown in Fig. 5(a), a plurality of (nine in the figure) uy-led elements L constitute one light-emission control unit (as the light-emission control groups GR1 to GRn). In this manner, the plurality of UY-LED elements L are used as the light-emission control unit, whereby the illuminance of the light emitted from the light-emitting elements of 201243504 can be suppressed. Further, when the light source 4 is constituted by a small number of UV-LED elements L, as shown in FIG. 5(b), it is preferable to form the element L so that the element L is rich in the substrate transport direction (χ direction) and the substrate width direction (Υ direction). . [0027] Further, as shown in Fig. 3, under the wire 4, there is a light source secreted by light diffusion. That is, the light source 4 and the substrate to be illuminated are placed with the light window 6. The illumination window 6 formed by the wide dispersion plate is diffused, so that the light emitted from the light source 4 is diffused, so that the adjacent L light is connected to each other (the front and back of the component L are provided to the substrate width direction 8 ^ ED element L) The illumination is effectively illuminated from the illumination control group GR constituting the light source 4: the illumination control is controlled by the diagram. Further, the illumination of the current can be supplied to the illumination drive unit 9 In response to the change, the og light driving unit 9 controls its driving by the control unit 40 composed of a computer.

(4) The irradiation unit 3 can be provided with respect to the support frame 15 of the plate G conveyed on the substrate conveyance path 2, and is provided in the lower limit 11 of the light irradiation unit 3, and is separated from the bottom; The slab #15a is movable up and down by the lift cylinder 11 (lifting mechanism) constituted by, for example, one of the bases 100, by the pair of steam cylinders. When the position is as shown in Fig. 3, when the light-irradiating unit 3 is moved to the lowest position, the horizontal sand-cutting knife 07 holding member 16 of the support frame 15 abuts. The lower part of the base is set on the base 100. [0030] 201243504 The shape of the i-direction === the lower side is set upright with a cylinder

The surface is provided with a K-axis guide shaft 于 on the left and right sides of the lifting shaft η. Therefore, as the light-irradiating unit 3 moves up and down, the guide member 13 slides in the vertical direction, and the light-emitting glaze 14 maintains a good accuracy. The level of the illumination window 6 of the early 3rd [0031] Further, the lower side of the light irradiation unit 3 (upstream side in the drawing) is provided with two light rays for passing through the illumination window 6. The detector 31 can be applied with a pair of guides 33a extending in the width direction of the base plate along the light source 4 in the width direction of the substrate (the moving plate is formed on the base 1〇0 directly below the f4). 33b. [0032] The bottom surface side of the m-plate f is provided with a linear motor 34 movable along the pair of lanes 33a, 33b. The linear motor 34 passes through the power supply, and the power source (not shown) is supplied with a power source. = ^4 Secret (not shown), used to control the linearity by the control unit 40 [0033] The illuminance sensor 31' on its board 32 can be along the way 33a, 33b, at this time illuminance sensing The gamma-constant and substrate-surface illuminance sensing 11 31 of the device 31 can be advanced and retracted in the substrate width direction along the front, bottom, and exit positions of the light source 4 with respect to the substrate G. When the π-part exposure device 1 transports the substrate G, The illuminance sensor 31 is controlled by the control unit to retreat to one end side of the rails 33a and 33b, and the slab G illuminance sensor unit 30 is used to measure each illuminating control group 'lighting degree A' to obtain The current value and the hairline red _ supplied to each of the light emission control groups GR L). W(4) several pieces 12 [0034] 201243504 Since the substrate G is on the substrate transport path 2, the substrate G is obtained at a predetermined speed (for example, when the signal is obtained by 5 〇mm/ 细 细##] and the substrate transport speed. [0035] The system 40 has an illumination control program P in a predetermined recording area for controlling the glow of each of the illumination control groups GR constituting the light source 4 in the order of == _方程序Ρ' Pre-set information, etc. as the ration used for its execution = the required illuminance to be transmitted at the predetermined position of the substrate G (current 値 for the group GR), and calibration control For 竽美柘r & 疋 疋 疋 发光 发光 。 。 。 。 。 。 。 。 。 。 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 00 00 00 00 00 (referred to as formula) is implemented. The parameters of the second = are implemented. In addition, the formula II::-;:ΐί^Γ, the substrate to be processed. The other---the object is exposed to the cow and the shadow processing (not By local exposure to apricot pull ^ "hunting by the usual light lithography step [ol] 7^ step) field wiring pattern In the plane of the substrate G which is sampled after the photoresist coating is applied to the substrate that has been subjected to the half-treatment of the half-processed measurement, the film is sampled in the plane of the substrate G sampled (the photoresist 13 201243504) St2), and schematically shown in Fig. 7, the predetermined range AR of the film to be subtracted is calibrated (Fig. 6 ^^^2 coordinate 値(X ' y) [0038] ' t5). As shown in Fig. 6, in the take-up material * photolithography step (not by the local exposure device!, for the majority of the substrate to be processed by sampling (Figure 6 step & 'formed into a line pattern Next, measure the spacing between the samples of the sampled substrates G (step (4) of Fig. 6 and as shown in Fig. 7 _ spoon, the line width of the spring pattern, the figure of the standard fiber membrane G two-dimensional calibration of the established range AR After that, as shown in Fig. 8, the calculation of the wire mesh AR is performed on each coordinate 値 and the control portion 4 〇 (XI, y 1) is 1000 AX, the step of Fig. 6 is, and the film thickness (for example, at the coordinate 1) is 0.2 mJ. /cm2) (Step St7 of Fig. 6) See, ,, and degree ((1), y [0040] Also, as shown in the formula table T1 of Fig. 8, the illuminating control of each coordinate value at _ Group Γ ^ 9 do not exit the relevant tables of the mission to Τ2 *, St8) 'from alkylene

The desired current 値 (step st9 of Fig. 6) is viewed at the desired illuminance in the correlation table T2, and the display illumination control group 袓 GR 40 is updated, for example, in the following manner. In the state of the control signal and the driving degree of the control unit 40, the illuminance at the standby position is made equal by the sensor 31 moving to the illuminating window motor 34, so that the illuminance sensor 31 贞 ^ ^ = top surface The distance between the illumination. (4) The degree of luminescence of the shell J is irradiated on the substrate G [0041] 201243504 =, the mother illuminating control group 16GR towel, the illuminating control value supplied to the light source 4 is fixed and reduced, and the illuminance is measured by the illuminance. The relationship between the illuminance value and the current value is stored in the above correlation, and the 6 (5) flow finds all the parameters and sets the recipe table T1 '7〇, . Preparation step (step St of Fig. 6) [0042] Fig. 1G to Fig. 12 of the light illustrate the partial exposure of the partial exposure net 1 (step S1 of Fig. 10), and the detection signal supply of the Japanese factory Measured by the control unit) ======Transport speed 'Start to get (the [0043] ^ } The predetermined area below the light source 4 is illuminated by the light source 4, as shown schematically in Figure 11, for the structure S4 ). The industrial group and the GR1 to GRn perform the light emission control (the step of FIG. 10 controls the light distribution of the group address when the basin light is irradiated to the predetermined range of the substrate G. More = beam =, group During the period of group-1, _丄, the required range of the supplied cis is passed through the light source, and not only the size of the radiation beam W is changed. The local part of the AR is the arbitrary illuminance, the established range of G, It is also possible to perform 'other two partial exposure areas in the range [0044] ..., and in its extension p + Μ) (steps of Figure 10, other areas _ group / R control, il no step)... bundle Partial exposure processing of the substrate G. 201243504 Performing the second 'ibf part# light treatment (ae) plus the pre-emptive treatment (EXP) in the front or the back stage, the exposure processing for the substrate g is ended, and the photoresist film of the money is passed by the developing device 56 ( DEV) performs development processing. [0045] Well resistance i is based on the implementation of the county gamma, in the formation of the secret plate G (four) material field, from the direction of the substrate

2 ίίϊΓ 肌 ED L L 职 职 职 职 职 职 职 控制 控制 控制 控制 控制 控制, the substrate G that is transported below performs the selected light emission control group GR, and (4) the local exposure process is performed to make the film thickness thinner. The hunting is reduced to a desired amount by the preset exposure amount (illuminance). Film thickness. A Α = for example, even if the photoresist film has a different film thickness (thick film portion) in the half exposure process (that is, it has a film thickness such as a thin film portion), the development process can be performed. The thickness of the photoresist film is uniform, and the line width and pitch of the wiring pattern can be suppressed. ~ In the setting of the exposure (illuminance), the illuminance sensor 31 is used in advance to control the amount of the input side, and the relationship between the drive current value and the illuminance is saved as a correlation table. Accurately adjust the exposure. In the above embodiment, an area in which the local additional exposure is performed is shown as an effective area of the substrate surface, but the invention is not limited thereto. For example, as shown in Fig. 13, a process of exposing 周边1 to the periphery of the edge portion region of the substrate G may be used. Further, in the above embodiment, the light emission control group including the plurality of UV-LED elements L is shown as an example of the light emission control unit. However, the present invention is not limited thereto, and the a UY-LED element L may be used as the light emission. Control unit, partial exposure in more detail. Further, in the above-described embodiment, the substrate G is horizontally transported and exposed to light, and the exposure processing is described as an example. However, the present invention is not limited to this embodiment, and the substrate to be processed may be held in a stationary state in the chamber. Exposure treatment is performed on the held substrate. At this time, the linear light source can also be moved relative to the substrate to be processed (that is, as long as the line 16 201243504 is in the opposite direction, the substrate is moved in the opposite direction, that is, the spoon is an example 2 3 _ half _ processed light The residual film thickness can also be applied to the local exposure side of the present invention instead of the semi-exposure treatment, and the medium uniformity. Ukrainian hunting can make the photoresist residual film thickness in the plane and is not limited to the step of adding as shown in FIG. It is necessary to illuminate, or Xiaodan Gudan/test t7 according to the residual film thickness to determine the pattern line width after the production of the phase 2 shirts to find the figure 荦 line width speculation = f' based on the relevant information Make a formula table. With the 4 - 佶 ^ description of the form, according to the relevant table T2, the illuminance is controlled by the required peaks and * current values. At this time, if, degree is; It is possible to appropriately adjust the illuminance of the purely degraded electric power due to the illuminance of the illuminance measurement of the UV-LED element L'4 H even if it is for the duration of the aging element L. Get the desired height when you get the "measure again, the result of the position." It is set as the illuminance unit 3 [0049] The film I determines the predetermined area of the photoresist film of G, even if it is unfavorable static ί , / as the parameter, the illuminance is omitted (that is, the side table T2 of the used value is also used) It can save the update of the periodic correlation table 2 of the degree measurement of the shaving time 31.

C 17 201243504 The same can be obtained by the same method as the above-mentioned embodiment of the present invention. The solid-state bias is not obvious - the full implementation of the embodiment does not reach the input substrate _. The ten-sided view and FIG. 3 are the cross-sectional views in the A-A direction of FIG. Diagram 4 (8) ~ _ in the light "step money map device planted schematic display map wire _ Wei element row flat set the local exposure of the light control program (four) light device in the light device The partial exposure position of the light-emitting substrate is the local exposure position of the local exposure device of the present invention. The partial exposure device of the present invention is used for the partial exposure operation of the partial exposure device of the present invention. A plan view of the set. - Step = "face to image transfer" is used to explain the use of (10) 18 201243504. Fig. 16 (8) to Fig. 16 (8) show a cross-sectional view showing a wiring pattern forming step by half exposure processing and a photoresist film thickness larger than that of Fig. 15. [Explanation of main component symbols] 1.. Local exposure device 2.. Substrate transport path 3.. Light-irradiating unit 4. Light source 6.. Illumination window 7.. Circuit board 8... Light-reflecting wall 9 .. . Illumination drive part 11.. Lifting shaft 12.. Lifting drive part 13.. Guide member 14.. Guide shaft 15.. Support frame 15a... Horizontal plate part 16.. Support member 20: transport roller (substrate transport mechanism) 30... illuminance sensor unit 31.. illuminance sensor 32.. moving plate 33a, 33b... track 34.. linear motor 35. . Cable Covering 39.. Substrate Detection Sensor (Substrate Detection Mechanism) 40.. Control Unit 51, CT... Photoresist Coating Device 52, DP... Decompression Drying Device 19 201243504 53. PRB...Prebaking device 54, COL...Cooling device 55, EXP...Exposure device 56, DEV...Developing device 100.. Abutment 200... Gate electrode 201.. Insulation Layer 202..51. Layer 202a... Undoped amorphous layer 202b... Dilutely doped amorphous Si layer 203.. Metal layer AR... Range E1... Edge portion G.. · Glass Substrate (substrate to be processed) GR...light emission control group [••UV-LED element (light-emitting element) pi, p2··· pitch R, R3... photoresist pattern R1... thick film portion R2... thin film portion

Stl~10, S1~5...Steps T1...Formulation Table T2, T3...Related Table tl, t2...Thickness 20

Claims (1)

201243504 VII. Patent application scope: The established area of the implementation of the strong surface includes: Horizontal ϊϊϊ 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板Further, in the case of a plurality of linear light-emitting elements, the light-emitting film of the light-emitting element can be used to illuminate the surface of the light-emitting element, and the sensing portion of the substrate can be moved relative to the substrate. Among the majority of the light-emitting elements of the light source, one 5' illumination is controlled by a light-control unit, and the light is selectively driven; the light can be driven by the light source π ΐ 光 ( 四 i 该 该 该 , , , , , , , , , , , , , , , The illuminance detected by the mechanism and the driving of the illuminating element for the illuminating element are memorized, and the illuminating driving unit is controlled to be thicker. =: a predetermined area of the photosensitive film, according to the light-emitting element of the film source, the light that is incident on the predetermined area determines the driving current value according to the driving current value and the shading degree, and the second system . The headlight drives the portion to cause the light-emitting element to emit light. The partial exposure of the first item of the patent scope is set to green, and the tenth is forwarded to iii. And the measuring mechanism is in the same height position as the substrate, and is variable along the width of the substrate; C 21 201243504 Illuminance of the light irradiated by the light source. 4. The partial exposure device of any one of the claims of the third aspect of the invention, wherein the contiguous element f detection mechanism is disposed on the substrate 35 to be disposed on a further upstream side of the light source, and is detected by The substrate transported by the substrate transport mechanism; the second substrate: 取 according to the substrate detection signal of the substrate debt measuring mechanism and the substrate transport speed, the substrate transport position is taken, and the light-emitting drive unit is controlled to make the determined photosensitive film (4) When moving relatively below the light source, the digital exposure device is selected, and only the partial exposure device of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The diffusing plate; the light of the light source u (4) is radiated to the substrate by the light diffusing plate. The partial exposure device, wherein, the group, and each of the mu is divided into multiple bribe control groups and a plurality of crane current values _= according to the current value of the county _= as in the scope of patent application, 1 i311 The partial exposure apparatus of the item 4, wherein the control unit increases the thickness variation of the film formed on the substrate by + and the development process by the development process; The film portion is used in accordance with the correlation table to cause the light-emitting element to emit light. The turbulence value is controlled to control the illumination drive 22