201243313 ^zzzypif 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種利用紅外線的吸收特性來檢測氣 體成份的濃度的氣體成份檢測裝置。 【先前技術】 作為先前的氣體成份檢測裝置，有專利文獻1中揭示 的紅外線式氣體檢測器或專利文獻2中揭示的紅外線氣體 分析儀等。 引用文獻1中揭示的先前例具備：罩殼（housing )， 將作為檢測對象的氣體（例如一氧化碳等）導入内部；光 源，對罩殼内照射紅外線；以及紅外線檢測器，檢測罩殼 内的紅外線。光源包含封裝（package)型的發光二極體， 所述封裝型的發光二極體包含發光二極體晶片（di〇de chip)(裸（bare)元件）、安裝裸元件的管座（stem)以及 密，裸元件的密封材等，所述光源自突設於管座的導線端 子受到供電而發光。而且，紅外線檢測器包含封裝型的光 電二極體’所述封裝型的光電二極體包含光電二極體 (photodiode)晶片（裸元件）、安裝裸元件的管座以及密 封裸兀件的密封材等’所述紅外線檢測器自突設於管座的 導線端子導出檢測信號。該先前例中，於罩殼的内部形成 #橢11體形狀的空間’發光二極體晶片以及光電二極體晶 片位於^橢圓體的2個焦點。另-方面，引用文獻2中揭 不的先前例具備：箱形的金屬盒體（case) 、配置於金屬盒 胃内的_反射鏡、與觀反射鏡的反射面相向而配置的 4 201243313. HZZZypif 光源以及受光器等。於金屬盒體上設有通氣孔，包含作為 氧化碳)的混合氣體通過該通氣 士Μ土、、"體内。並且，根據自光源所照射的紅外線 ’被作為檢測對象的氣體吸收而被紅外線檢測器或受 卜線的量(位準(level))，可檢測存在於 罩成或金屬I體⑽作為檢測對象的氣體的濃度。 專利文獻1:日本專利特開2〇〇6·27侧號公 專利文獻2:曰本專利特開平9_18_號公報 然而，於引用文獻i中揭示的先 ==;r的零件，且以彼此的 線端子進行配線的問題。而且 二：貝㈣導 前例中’為了提高檢測靈敏度， 圓反射鏡的距離大至-定程度，因 體的高度尺寸（低高度化）關題。 、’】金屬益 【發明内容】 本發明是有鑒於上述課題而完盆 線的簡化以及低高度化。 八 於實現配 本發明的一實施形態的氣體成份檢 包括：一個或多個發光部，包含半導體晶片，==二 所述半導體晶片接收紅外線並轉換成電信二+=體晶片， 持上述發光部以及上述受光部；第i光路料;寺體，保 述發光部放射的紅外線的先路變更為上述S二=5 201243313 向；以及第2光路變更部，將經該第i光路變更部變更後 的上述光路變更為與上述受光部的受光面交叉的方向。 於該氣體成份檢測裝置中，較佳的是，更包括.一個 或多個波長遽波器，於通過區域中包含規定的波 上 述受光部接收通過上述波長濾波器的紅外線。\ 口。曰於該氣體成份檢測裝置中，較佳的是，上述波長滤波 斋是與上述受光部一同由上述保持體所保持。 心 器配2體;?:測裝置中，較佳的是，上述波嫩 魏置於上述第i光路變更部與上述第2光路變更部之間 的上述光路上。 職份檢職置巾，難的是，上述上述波長 /慮波裔戈·裝於上述受光部中。 ^氣體成份檢測裝置中，較佳的是，上述波長遽波 少—個波長濾、波器包含：第1波長滤波器，於通 =域中包含被作為檢測對象的氣體所吸收的波長帶；以 =第2波錢波ϋ ’於通㈣财不包含 述通過區域且包含該通過區域附近的波長帶L 過：中的至少一:固受光部包含：$ 1受光部，接收通 ’L 1波長舰器的紅外線；以及第2受光部，接收 通過上述第2波長濾波器的紅外線。 ㈣^錢體成份檢測裝置中，較佳的是，包括：信號處 W ι/卩，對自上較光部輸出的f錢進行信號處理， =號處理電路雜置於下述位置，該位置是介於上述發 ^與上述受光部之間、且不與經上述第i光路變更部變 6 201243313 更的光路重合的位置。 於該氣體成份檢測裝置中，較佳的是，於上述信號處 理電路部與上述光路之間配置反射鏡。 於该氣體成份檢測裝置中，較佳的是，上述反射鏡形 成為將一面設為反射面的平板狀，且該反射鏡以該反射面 與上述發光部的發光面齊平的方式而保持於上述保持體。 於該氣體成份檢測裝置中，較佳的是，於上述發光部 與上述信號處理電路部之間設置壁，所述壁遮擋自上述發 光部放射的紅外線。 x 於該氣體成份檢測裝置中，較佳的是，上述壁是與上 述保持體一體地形成。 … 於忒氣體成伤檢測褒置中，較佳的是，於上述發光部 與上述第1光路變更部之間的光路上配置聚光用的透鏡。 於該氣體成份檢測裝置中，較佳的是，上述保持體是 ^體配線基板，所敎體配線基板—體地形成有對上述發 光部以及上述受光部的配線。 於該氣體成份檢測裝置中，較佳的是，包括：罩保 j述第1光路變更部以及上述第2光路變更部並與上述 ^夕體結合，於該罩的與上述保持體的結合面上設有一個 =二個大起’於上述保持體的上述結合面上設有與該突起 =的嵌合孔’於额合孔的底面設有錢比絲合孔小 (發明的效果） 本發明的氣體成份檢測裝置具有可實現配線的簡化以 7 201243313 及低高度化的效果。 【實施方式】 以下，參照構成本說明書的一部分的附圖，進一步詳 細說明本發明的實施形態。於所有附圖中，對於相同或類 似的部分標註相同的參照符號並省略說明。 、 (實施形態1) 本貫施形態的氣體成份檢測裝置（以下稱作氣體感測 器（sensor))如圖2所示包含電路區塊丨與光學區塊2。 再者，於以下的說明中，在圖2中規定上下左右前後。 電路區塊1是於包含合成樹脂成形體的主體（b〇dy) 10的内部收納發光部3、受光部4、波長濾波器5、安裝有 信號處理電路部6的配線板11等而構成。發光部3包含放 射紅外線的半導體裸晶片（例如發光二極體晶片、或於半 導體基板上形成有使用微機電系統（micr〇_electr〇 mechanical system，MEMS )技術的電阻元件而成的光 源）。其中，自發光部3放射的紅外線的波長是易被作為檢 測對象的氣體（例如一氧化碳、二氧化碳、甲烷（methane ) 或氮氧化物專）所吸收的波長。而且，受光部4包含接收 紅外線並轉換成電信號的半導體裸晶片（例如光電二極體 晶片或熱電元件）。波長濾波器5包含帶通濾波器（bandpass filter)，所述帶通渡波器於通過區域中包含規定的波長帶， 所述規定的波長帶例如是在自發光部3放射的紅外線的波 長中會被作為檢測對象的氣體所吸收的波長帶。此種帶通 濾波器亦被稱作干涉濾波器，主要具有介電質膜的多層結 8 201243313 Hzzzypif 構。信號處理電路部6包含積體電路（Integrated㈤也， 1C)’所述積體電路驅動發光部3以照射紅外線，或者對自 又光°卩4輸出的仏號進行增幅、波形整形、取樣 (sampHng)、A/D轉換、運算處理、修正處理、異常濃度 判定處理等的信號處理。 配線板11如圖3所示，一體地形成有長方形狀的主部 11A與延長部11B，所述延長部UB為比主部UA小的長 方形狀’ 自主部11A的左後端朝左方突出。於主部11A 的大致中央安裝有信號處理電路部6，未圖示的印刷配線 形成於主部11A的上表面以及延長部11B的上表面。 主體10形成為扁平的長方體形狀，並且設有上表面側 開口的凹處100，於該凹處100内收納配線板u。而且， 於主體10的上表面側的左端部，形成有凹部1〇1，於該凹 部101的底面（下表面）安裝發光部3 (參照圖丨）。即， 於本實施形態中’主體10相當於保持體。再者，發光部3 藉由打線接合（wire bonding)等的適當方法，而與延長部 11B的印刷配線電性連接。此處，於凹部ιοί的右端哎 有與主體10的上表面為大致相同高度的壁102。即，於發 光部3與信號處理電路部4之間設有壁1〇2，自發光部3 放射的紅外線被壁102遮擋，藉此可抑制因被照射到紅外 線而引起的信號處理電路部6的誤動作。並且，由於'此# 壁102是與主體10 —體地形成’因此與壁獨立於主體1〇 而形成的情況相比較’具有可實現低成本化以及小型化的 優點。 201243313201243313^zzzypif VI. Description of the Invention: [Technical Field] The present invention relates to a gas component detecting device that detects the concentration of a gas component by utilizing the absorption characteristics of infrared rays. [Prior Art] As the conventional gas component detecting device, there are an infrared gas detector disclosed in Patent Document 1, or an infrared gas analyzer disclosed in Patent Document 2. The prior art disclosed in the cited document 1 includes a housing for introducing a gas (for example, carbon monoxide or the like) to be detected into the inside, a light source for irradiating the inside of the casing with infrared rays, and an infrared detector for detecting infrared rays in the casing. . The light source includes a package type light emitting diode, and the package type light emitting diode includes a light emitting diode chip (bare element) and a bare element mounting socket (stem) And a sealing material such as a dense or bare component, wherein the light source is supplied with light from a lead terminal protruding from the stem. Moreover, the infrared detector includes a package type photodiode. The package type photodiode includes a photodiode wafer (naked element), a bare element mounted socket, and a sealed bare member seal. The infrared detector detects the detection signal from the wire terminal protruding from the stem. In this prior example, a space of an ellipse 11 shape is formed inside the casing. The light-emitting diode wafer and the photodiode wafer are located at two focal points of the elliptical body. On the other hand, the prior example disclosed in the cited document 2 includes a box-shaped metal case, a mirror disposed in the stomach of the metal case, and a reflector arranged to face the reflection surface of the mirror 4 201243313. HZZZypif light source and receiver. A vent hole is provided in the metal case, and a mixed gas containing carbon oxide is passed through the ventilated earth, " In addition, the infrared ray irradiated from the light source is absorbed by the gas to be detected and the amount of the infrared ray detector or the occlusion line (level) can be detected as the detection target or the metal I body (10). The concentration of the gas. Patent Document 1: Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. Hei. No. 9-18_. However, the parts of the first ==;r disclosed in the cited document i, and The problem of wiring the wire terminals. And two: Bei (four) guide In the previous example, in order to improve the detection sensitivity, the distance of the circular mirror is as large as - to a certain extent, depending on the height dimension (low height) of the body. </ RTI> </ RTI> The present invention has been made in view of the above problems, and the simplification and lowering of the basin are achieved. The gas component inspection according to an embodiment of the present invention includes: one or more light emitting portions including a semiconductor wafer, and == two of the semiconductor wafers receive infrared rays and converted into a telecommunication two += body wafer, holding the light emitting portion and The light-receiving unit; the i-th optical path material; the temple body, the anterior path of the infrared ray emitted from the illuminating unit is changed to the S2=5 201243313 direction; and the second optical path changing unit is changed by the ith optical path changing unit The optical path is changed to a direction intersecting the light receiving surface of the light receiving unit. Preferably, the gas component detecting device further comprises: one or more wavelength choppers, wherein the passing region includes a predetermined wave, and the light receiving portion receives infrared rays passing through the wavelength filter. \ mouth. Preferably, in the gas component detecting device, the wavelength filtering means is held by the holding body together with the light receiving portion. Preferably, in the measuring device, the Ponziwei is placed on the optical path between the i-th optical path changing unit and the second optical path changing unit. It is difficult for the above-mentioned wavelength/waves to be placed in the above-mentioned light receiving unit. Preferably, in the gas component detecting device, the wavelength chopping is small—the wavelength filter includes: a first wavelength filter, and includes a wavelength band absorbed by the gas to be detected in the pass=domain; ==2nd wave money wave 'Yutong (4) money does not include the passage area and includes at least one of the wavelength bands L in the vicinity of the passage area: the solid light receiving unit includes: $1 light receiving unit, receiving pass 'L 1 The infrared ray of the wavelength yam; and the second light receiving unit receives the infrared ray passing through the second wavelength filter. (4) In the body component detecting device, it is preferable to include: signal W ι / 卩, signal processing of the f money output from the upper light portion, and the number processing circuit is mixed in the following position, the position It is a position which is between the above-mentioned light-receiving part and the optical path which does not overlap with the above-mentioned i-th optical path changing part 6 201243313. In the gas component detecting device, preferably, a mirror is disposed between the signal processing circuit portion and the optical path. In the gas component detecting device, it is preferable that the reflecting mirror is formed in a flat plate shape having one surface as a reflecting surface, and the reflecting mirror is held in such a manner that the reflecting surface is flush with a light emitting surface of the light emitting portion. The above holding body. In the gas component detecting device, it is preferable that a wall is provided between the light-emitting portion and the signal processing circuit portion, and the wall blocks infrared rays emitted from the light-emitting portion. x In the gas component detecting device, it is preferable that the wall is formed integrally with the holding body. In the gas flaw detection detecting device, it is preferable that a lens for collecting light is disposed on an optical path between the light-emitting portion and the first optical path changing portion. In the gas component detecting device, it is preferable that the holder is a body wiring substrate, and the wiring of the light-emitting portion and the light-receiving portion is formed integrally with the body wiring substrate. In the gas component detecting device, preferably, the first optical path changing unit and the second optical path changing unit are coupled to the above-described body, and the bonding surface of the cover to the holding body is included in the cover. One of the two large lifting members is provided on the joint surface of the holding body, and the fitting hole with the protrusion = is provided on the bottom surface of the counter-hole, and the hole is small (the effect of the invention). The gas component detecting device of the invention has the effect of simplifying the wiring to 7 201243313 and reducing the height. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings which form a part of this specification. In the drawings, the same or similar components are designated by the same reference numerals, and the description is omitted. (Embodiment 1) A gas component detecting device (hereinafter referred to as a gas sensor) of the present embodiment includes a circuit block 丨 and an optical block 2 as shown in Fig. 2 . In addition, in the following description, the up-and-down left and right front and back are defined in FIG. The circuit block 1 is configured by accommodating the light-emitting unit 3, the light-receiving unit 4, the wavelength filter 5, and the wiring board 11 to which the signal processing circuit unit 6 is mounted, in the main body including the synthetic resin molded body 10. The light-emitting portion 3 includes a semiconductor bare wafer that emits infrared rays (for example, a light-emitting diode wafer or a light source formed of a resistor element using a microelectromechanical system (MEMS) technology) on a semiconductor substrate. Among them, the wavelength of the infrared ray emitted from the light-emitting portion 3 is a wavelength which is easily absorbed by a gas to be detected (for example, carbon monoxide, carbon dioxide, methane or nitrogen oxide). Further, the light receiving unit 4 includes a semiconductor bare wafer (e.g., a photodiode wafer or a thermoelectric element) that receives infrared rays and converts them into electrical signals. The wavelength filter 5 includes a bandpass filter that includes a predetermined wavelength band in the pass region, and the predetermined wavelength band is, for example, in the wavelength of the infrared ray emitted from the light-emitting portion 3. The wavelength band absorbed by the gas to be detected. Such a band pass filter is also referred to as an interference filter, and has a multilayered junction of a dielectric film 8 201243313 Hzzzypif structure. The signal processing circuit unit 6 includes an integrated circuit (Integrated (1), 1C). The integrated circuit drives the light-emitting unit 3 to emit infrared rays, or amplifies, waveforms, and samples an apostrophe output from the light-emitting device (sampHng). ), A/D conversion, arithmetic processing, correction processing, abnormal concentration determination processing, and the like. As shown in FIG. 3, the wiring board 11 is integrally formed with a rectangular main portion 11A and an extension portion 11B which is smaller than the main portion UA. The left rear end of the autonomous portion 11A protrudes to the left. . A signal processing circuit unit 6 is mounted substantially at the center of the main portion 11A, and a printed wiring (not shown) is formed on the upper surface of the main portion 11A and the upper surface of the extended portion 11B. The main body 10 is formed in a flat rectangular parallelepiped shape, and is provided with a recess 100 having an open upper surface side in which the wiring board u is housed. Further, a concave portion 1〇1 is formed at the left end portion of the upper surface side of the main body 10, and the light-emitting portion 3 is attached to the bottom surface (lower surface) of the concave portion 101 (see Fig. 。). That is, in the present embodiment, the main body 10 corresponds to a holding body. Further, the light-emitting portion 3 is electrically connected to the printed wiring of the extension portion 11B by an appropriate method such as wire bonding. Here, a wall 102 having substantially the same height as the upper surface of the main body 10 is formed at the right end of the concave portion ιοί. In other words, the wall 1〇2 is provided between the light-emitting unit 3 and the signal processing circuit unit 4, and the infrared rays emitted from the light-emitting unit 3 are blocked by the wall 102, whereby the signal processing circuit unit 6 caused by the irradiation of the infrared rays can be suppressed. Mistakes. Further, since the 'wall # 102 is formed integrally with the main body 10, and thus the wall is formed independently of the main body 1', there is an advantage that cost reduction and miniaturization can be achieved. 201243313
另一方面，於主體ίο的上表面側的右端部，形成有上 侧凹部103與下側凹部104，所述上側凹部1〇3的上下方 向的深度與波長濾波器5的厚度（上下方向的高度）大致 相等’所述下側凹部104位於上側凹部1〇3的前後方向的 中央。並且，於下側凹部104的底面（下表面）安裝受光 部4 ,且以覆蓋受光部4的上方的方式而於上側凹部1〇3 的中央配置波長濾波器5 (參照圖1)。因此，朝向受光部 4的紅外線通過波長濾波器5後被該受光部4接收。再者， 受光部4藉由打線接合等的適當方法，而與主部11A的印 刷配，電性連接。此處，於本實施形態中，使波長滤波器 5與受光部4 -同保持於主體1G，因此無須 5收納至封裝巾，因而具討實現低成本化以及小型= 優點。 於主體10的前後兩侧面，如圖2以及圖3所示，多個 ^圖不例中為4個）端子12沿左右方向排列並突出。該些 h子12包含金屬板，且嵌入（丨則^打）成形於主體上。 於凹處⑽_前方以及後方分別形成稜柱狀的台 °山立雨（圖示僅為後方），於前側面突出的4個端子12的. =:路出於前方的台部1〇5的上表面，於後侧面突出的4 子12的端部12a露出於後方的台部i〇5的上表面。 用#绩露出於台部1〇5上表面的各端子12的端部12A利 連^樓合等的適當方法’而與配線板11的印刷配線電性 光學區塊2是於包含合成樹脂成形體的罩2〇的内部收 201243313 納導光體8而構成。（參照圖1)罩20形成為前後左右的 長度尺寸與主體10相等的長方體形狀，並且設有於下表面 侧開口的凹處200,且罩20在該凹處200内收納有導光體 8的狀態下接合於主體10的上表面側。而且，於罩20上 部的中央’設有沿上下方向貫穿罩20的矩形的通氣孔 201 ’外部氣體（包含作為檢測對象的氣體的多種混合氣 體’以下相同）通過通氣孔2〇1被導入凹處200(導光體8) 内°再者’通氣孔201的形狀並不限定於矩形’亦可為圓 形等的其他形狀，且亦可為多個。其中，為了防止外部氣 體以外的異物例如塵埃等進入通氣孔201内，罩20上表面 的通氣孔201的開口由防塵過濾器7所覆蓋（參照圖 導光體8如圖1所示包含第i反射鏡（第i光路變更 部）80、第2反射鏡（第2光路變更部）81、第3反射鏡 82以及第4反射鏡83。第！反射鏡8〇例如具有抛物面形 狀的反射面’將自發光部3放射的紅外線的光路（光轴） (參照圖1中的虛線）反射（變更）為沿著主體1〇的上表 面（保持面）的方向（左右方向）。而且，第2反射鏡Μ 例如具有平坦的反射面’將經第丨反射鏡8〇變更後 (光轴）反射（變更）為與受光部4的受光面（上表面） ί叉的方向（上：方向)。而且，第3反射鏡82形成為將 ^ ^ 地 覌配置於兩端的半圓筒形狀。 其中，於第3反射鏡82的中央部，日日_ t 〜丫为#，開設有與罩20的通翁 孔2(U相連的孔（未圖示）。再者，這3個反射鏡⑽ 射鏡82既可由金屬材料形成錢Μ形於罩Μ上，或者， 11 201243313. 亦可藉由於凹處200的内面蒸鍍或鍍敷鋁等的金屬而形 成。尤其’於藉由蒸鍍或鍍敷來形成反射鏡80〜反射鏡82 的情況下’與由金屬材料形成的情況相比較，可實現低成 本化與尺寸精度的提高。 第4反射鏡83如圖2所示’由铭等的金屬材料的板材 構成為平板狀’或者’藉由於成形品上蒸鍍或鑛敷鋁等的 金屬而形成為平板狀。於主體10的凹處100中的前後兩側 的開口緣’形成有與第4反射鏡83的厚度（上下方向的厚 度）大致相等的階差106,以使反射面朝上的狀態將第4 反射鏡83的前後兩側的端部載置於階差106上。即，如圖 1所示’在自主體10的壁102至上側凹部1〇3為止的範圍 内’凹處100的開口被第4反射鏡83堵塞。即，第4反射 鏡83配置於信號處理部6與光路之間。此時，若第4反射 鏡83的反射面（上表面）低於發光部3的發光面（上表面）， 則必須將收納信號處理電路部6及配線板11等的凹處1〇〇 的深度加深，因此會導致主體1〇的厚度（高度）增大。另 方面，若第4反射鏡83的反射面高於發光部3的發光 面，則於第4反射鏡83的端部，紅外線會發生反射而導致 損失增大，因此必須加大發光部3或受光部4的尺寸而難 以實現小型化。相對於此，於本實施形態中，將第4反射 鏡83載置於與其厚度尺寸大致相等的階差1〇6上藉此， 第4反射鏡83的反射面與發光部3的發光面（上表面）齊 平’因此可避免如上所述的不利情況。 於以上述方式構成的氣體感測器中，外部氣體通過通 12 201243313 氣孔201被導入導光赞8咖 外部，自發絲3放㈣紅外線被 ……二 為檢剩對象的氣體吸收，藉此，受糸 :的紅外線受光量減少。因 = 處理，藉此可檢祕i光部4的輸出信號進行信號 測對“氣體r的外部氣體中所含的作為檢 氣體嚿/^…-^成⑺的濃度^關於為了檢測 容，由於先前^已^=電路部6進行的信號處理的具體内 由於先别便已眾所周知，因此省略詳細說明。 並且，於本實施形態巾，發光部3以及技部4 :3+導體稞晶片（發光二極體晶片以 : =，並且自競部3朝向受光部4的紅外線的光路並^ 變更為摺線狀。因此，與使用封裝型的發光二極 ，或光電—極體的先前例（參照專敎獻丨、專利文獻2) 二匕’本！施形ϊ具有可實現配線的簡化的優點。而且， =施形態中’藉由第i反射鏡8G與第2反射鏡81將紅 卜線的光路（參照圖1的虛線）變更為大致η字形，因此 ，光路為大致ν字形的專利文獻2中揭示的先前例相比 較，不會賴光路長度而可實現上下方㈣高度尺寸的小 型化（低高度化）。並且，藉由低高度化 中揭示的先前例相比較’自通氣孔201至光路離 ^以縮短，s此還具有下述優點，即，可實現對於外部氣 體中的檢測對象氣體的比例變化的檢測響應性的提高。 而且’於本實施形態中，藉由將信號處理電路部6配 置在介於發光部3與受光部4之間、料與經第丨反射鏡 13 201243313 . * 丈 80變更的光路重合的位置，即，在主體1〇的内部（凹處 100内），可有效利用閒置空間（dead space )來實現主體 10以及罩20的小型化。 另外’於罩20的下表面的左右方向的中央附近且前後. 方向的兩端，分別朝下地突設有大致圓柱形狀的突起2〇2 (參照圖4)。而且，於主體10的上表面的左右方向的中 央附近且前後方向的兩端，分別設有與罩2〇的突起2〇2 嵌合的圓形的嵌合孔107 (參照圖2以及圖3)。即，藉由 使突起202與嵌合孔107嵌合，可實現主體1〇與罩2〇的 接合時的定位，使得發光部3與第1反射鏡8〇的對位以及 爻光部4與第2反射鏡81的對位變得容易。尤其，於本實 施形態中，第1反射鏡80的反射面形成為拋物面形狀，藉 由將主體10與罩20予以定位，便可輕易將發光部3配置 於反射面（拋物面）的焦點的位置。 此處，本實施形態於藉由自動組裝機來組裝的情況 下，基於自上方以相機（camera)拍攝所得的主體1〇的圖 像，而利用眾所周知的圖像處理技術（例如邊緣（edge) 檢，)>’來進行發光部3或受光部4的安裝位置的定位。於 本實施形態中’如圖4所示’於主體1〇上的嵌合孔ι〇7 的底面，設有直徑比嵌合孔1〇7小的孔1〇8，根據該孔1〇8 的開口緣（邊緣）來檢測嵌合孔1〇7的位置，以嵌合孔1〇7 的位置為基準來對發光部3或受光部4的安裳位置進行定 位。當使用眾所周知的圖像處理技術來根據嵌合孔1〇7的 開口緣進行嵌合孔術的位置檢測時，由於發光部3或受 201243313. 光部4表面的深度方向的位置與嵌合孔107的深度方向的 位置不同，因此會產生因拍攝圖像上的成像（焦點）位置 不同造成的位置檢測誤差。為了降低該位置檢測誤差，設 置小松的孔108，並將其開口緣的深度方向的位置設置為 與發光邛3或受光部4表面的深度方向的位置相同或大致 相同。即，於本實施形態中，電路區塊i與光學區塊2的 定位、發光部3及受光部4相對於主體1〇的安裝位置的定 位是以相同的嵌合孔107為基準來進行。其結果，與雙方 的定位以不同部位為基準的情況相比較，具有下述優點， 即’發光部3以及受光部4與導光體8 (第1反射鏡8〇以 及第2反射鏡81)的對位精度提高。此種突起2〇2與嵌合 孔107亦可分別各設置一個。 σ 然而，相對於第1反射鏡80的大小，發光部3並未小 至可被視為點光源的程度，因此只有自發光部3放射的紅 外線的一部分會通過第i反射鏡80的反射面（抛物面）的 焦點。因此’較佳的是如圖5所示，於發光部3與第j反 射鏡80之間的光路上配置聚光用的透鏡21，使透鏡21的 聚光點與第1反射鏡80的焦點一致。據此，自發光部3 放射的紅外線的大部分將通過第1反射鏡80的焦點，因此 可使紅外線被受光部4效率良好地接收。 再者’於本實施形態中，是將波長濾波器5安裝於主 體10上’但亦可如圖6( a)、圖6(b)、圖6(c)所示 將波長濾波器5安裝於受光部4 (半導體裸晶片）上。'例 如，矩形平板狀的波長濾波器5以覆蓋受光部4的受光面 15 201243313 40的方式而接合於受光部4的上表面。 器5下表面的周緣設有框 2波長濾波 部4的受光面40與波長遽波器;;5= 5而於受光 隙。再者，下表面平坦的波長，皮之間形成有間 Ϊ （Μ1—等的接合材51來接 口一(广、圖6 (c))。如此，只要波長濾、波器5是與受光部 4 一體地構成，則不再需要用於安裝波 凹部103 ’並且，波長滤波器5與受光= =二可減少主體,。的厚度而實現小型化 =)的優點。進而’可利用半導體晶圓（wafer)的製造製 程（process)來統-製造多個受光部4與波長滤波器5， 從而可實現製造成本賴減。或者，亦可於第丨反射鏡8〇 與第2反射鏡81之間設置波長濾波器5。 此處’第1反射鏡80並不限定於反射面為抛物面形狀 者’例如’亦可為具有球面形狀或多邊形面形狀的反射面 者。同樣地，第2反射鏡81並不限定於反射面為平坦者， 亦可為具有曲面形狀的反射面者。 (實施形態2) 圖7表示本實施形態的氣體感測器。本實施形態的特 徵點在於具備兩組受光部4與波長濾波器5的組，其他的 構成則與實施形態1共用。因而，對於與實施形態丨共用 的構成元件標註相同的符號並適當省略圖示以及說明。 如圖7所示，於主體1〇的上表面側的右端部，沿前後 方向排列形成有2個下側凹部ι〇4Α、下側凹部104B。並 16 201243313 且’於各下側凹部1〇4Α、下侧凹部104B的底面分別安裝 第1受光部4A與第2受光部4B，並且以覆蓋各受光部 4A、受光部4B上方的方式，將第1波長濾波器5A與第2 波長濾波器4B配置於上側凹部103的底面。 此處，第1波長濾波器5A於通過區域中包含作為檢 測對象的氣體所吸收的紅外線的波長域，但第2波長濾波 器5B於通過區域中不包含作為檢測對象的氣體所吸收的 紅外線的波長域’例如於通過區域中包含該波長域附近的 波長域。即，自發光部3放射的紅外線中，通過第丨波長 ，波器5A並被第1受光部4A接收的紅外線量對應於作 榀’則對象的氣體的濃度而減少，與此相對，通過第2波^ 濾波器5B並被第2受光部4B接收的紅外線量不 庇 作為檢測對象的氣體的濃度而減少。並广 =中，取第i受光部4Α與第2受光部二= 私的差值，絲於該纽來運算作為檢嶋氣體的 17，於如實施形態1般，信號處理電路邻6 Α …的輸出錢位準來運算氣體濃度的情J J於t J輸出信號位準因某些外部干擾因素 此會導致氣體濃度的檢測精度降低 I動時’有; ^號處理電路部6基於第丨受光部=;如上所述 ，出信號位準的差值來㈣料 光部4] L則可使各受光部4的輸出信號位準的=的曰氣體的讀 而抑制氣體濃度的檢測精度的降低。、_域消，妆 17 201243313 . pit 严再者，於實施形態1、實施形態2中，例示了對外部 氣體中所含的一種氣體的濃度進行檢測的氣體感測器，二 八要具備多組發光部3、受光部4、波長濾波器5與導光辦 ^的組，便可實現各組分別檢測不同種類的氣體的濃度^ 氣體感測器。並且，於此種情況下，亦可使各組中的每〜 組具備第1受光部4A、第2受光部4B、第1波長濾波器 5A及第2波長濾波器4B，並基於第1受光部4A與第 受光部4B的輸出信號位準的差值來檢測各氣體的濃度。 而且，亦可使第1組具備第丨受光部4A與第2受光部4色 以及第1波長濾波器5A與第2波長濾波器4B，而使第2 組具備受光部4以及波長濾波器5。此時，亦可使第丨叙 基於第1受光部4A與第2受光部4B的輸出信號位準的差 值來檢測各氣體的濃度，而第2組基於受光部4與第1奴 的第2受光部4B的輸出信號位準的差值來檢測各氣體 濃度。 此外，如圖8所示，若將主體1〇設為可一體地形成對 發光部以及受光部的配線的立體配線基板（所謂的MID基 板）’信號處理電路部6便可不經由配線板η而直接安装 於主體10，因此可實現主體1〇的進一步小型化。 上述的所有實施形態、實施形態中的說明例以及變形 例可彼此組合而實施。以上，對本發明的較佳實施形態進 行了說明’但本發明並不限於該些特定的實施形態，於不 脫離申請專利範圍的範疇内可進行多種變更以及變形，該 些變更以及變形亦屬於本發明的範疇内。 18 201243313. 【圖式簡單說明】 本發明的目的以及特徵將藉如下所示的附圖與較佳實 例的說明而明確。 圖1是實施形態1的概略剖面圖。 圖2是實施形態1的概略分解立體圖。 圖3是實施形態1中的電路區塊（blQd〇的概略立體 圖。 圖4是實施形態1的主要部分概略剖面圖。 圖5表示實施形態i中的其他結構 分省略 略剖面圖。 圖6 (a)、圖6⑻、圖6(c)表示實施形態1中的 受光部與波長毅㈣其他結構，圖6(a)是概略剖面圖， 圖6 (b)是概略的分解立體圖，圖6 (c)是進一步的其他 結構的概略剖面圖。 圖7是實施形態2的概略分解立體圖。 圖8是表示實施形態2的其他結構的電路區塊的概略 立體圖。 【主要元件符號說明】 卜h電路區塊 3 :發光部 4、4A、4B :受光部 5:波長濾波器 5A :第1波長濾波器 5B :第2波長濾波器 201243313it 6:信號處理電路部 7 :防塵過濾、器 8 :導光體 10 :主體 11 :配線板 11A :主部 11B :延長部 12 :端子 12A :端部 20 :罩 21 :透鏡 40 :受光面 50 :框部 51 :接合材 80 :第1反射鏡 81 :第2反射鏡 82 :第3反射鏡 83 :第4反射鏡 100、200 :凹處 101 :凹部 102 :壁 103 :上側凹部 104、104A、104B :下側凹部 105 :台部 20 201243313^ 106 107 108 201 ： 202 ： 階差 嵌合孔 孔 通氣孔 突起On the other hand, on the upper end portion of the upper surface side of the main body ίο, an upper concave portion 103 and a lower concave portion 104 are formed, and the depth of the upper concave portion 1〇3 in the vertical direction and the thickness of the wavelength filter 5 (up and down direction) The height is substantially equal to the lower side concave portion 104 located at the center in the front-rear direction of the upper side concave portion 1〇3. Further, the light receiving portion 4 is attached to the bottom surface (lower surface) of the lower concave portion 104, and the wavelength filter 5 is disposed at the center of the upper concave portion 1A3 so as to cover the upper side of the light receiving portion 4 (see Fig. 1). Therefore, the infrared ray directed to the light receiving unit 4 passes through the wavelength filter 5 and is received by the light receiving unit 4. Further, the light receiving unit 4 is electrically connected to the printing of the main portion 11A by an appropriate method such as wire bonding. Here, in the present embodiment, since the wavelength filter 5 and the light receiving unit 4 are held in the main body 1G, it is not necessary to store the package in the package, so that it is advantageous in terms of cost reduction and small size. As shown in Fig. 2 and Fig. 3, the front and rear sides of the main body 10 have four terminals 4 which are arranged in the left-right direction and protrude. The h sub- 12s comprise a metal plate and are embedded (formed) to be formed on the body. In the recess (10) _ front and rear, respectively, a prismatic platform is formed. The rain is shown in the front (the illustration is only the rear), and the four terminals 12 protruding from the front side are. =: The road is from the front of the platform 1〇5 On the upper surface, the end portion 12a of the four sub-pieces 12 projecting on the rear side surface is exposed on the upper surface of the rear table portion i5. The printed wiring electrical optical block 2 with the wiring board 11 is formed by synthetic resin molding using an appropriate method such as the end portion 12A of each terminal 12 on the upper surface of the top portion 1〇5, and the like. The inside of the cover 2 of the body is configured to receive the 201243313 nano light guide 8. (Refer to FIG. 1) The cover 20 is formed in a rectangular parallelepiped shape having a length dimension equal to that of the main body 10, and is provided with a recess 200 opened on the lower surface side, and the cover 20 houses the light guide 8 in the recess 200. The state is joined to the upper surface side of the main body 10. Further, in the center of the upper portion of the upper portion of the cover 20, a rectangular vent hole 201 through which the cover 20 is inserted in the vertical direction is provided. The external gas (the same type of mixed gas including the gas to be detected is the same) is introduced into the concave through the vent hole 2〇1. In the case of 200 (light guide body 8), the shape of the vent hole 201 is not limited to the shape of a rectangle, and may be other shapes such as a circle, or may be plural. In order to prevent foreign matter such as dust from entering the vent hole 201 from entering the vent hole 201, the opening of the vent hole 201 on the upper surface of the cover 20 is covered by the dust filter 7 (refer to the light guide body 8 as shown in FIG. a mirror (i-th optical path changing unit) 80, a second reflecting mirror (second optical path changing unit) 81, a third reflecting mirror 82, and a fourth reflecting mirror 83. The third reflecting mirror 8 is, for example, a reflecting surface having a parabolic shape. The optical path (optical axis) (see the broken line in FIG. 1 ) of the infrared ray emitted from the light-emitting unit 3 is reflected (changed) in the direction (left-right direction) along the upper surface (holding surface) of the main body 1 。. The mirror Μ has, for example, a flat reflecting surface ′ that is changed (changed) by the third reflecting mirror 8 光 (optical axis) into a direction (upward: direction) with respect to the light receiving surface (upper surface) of the light receiving unit 4 . Further, the third reflecting mirror 82 is formed in a semi-cylindrical shape in which the ^^ mantle is disposed at both ends. In the central portion of the third reflecting mirror 82, the day _t~丫 is #, and the opening to the cover 20 is opened. Wengkong 2 (U-connected holes (not shown). Again, these 3 mirrors The mirror 82 can be formed of a metal material on the cover, or 11 201243313. It can also be formed by vapor deposition or plating of a metal such as aluminum on the inner surface of the recess 200. In particular, by evaporation or When the mirror 80 to the mirror 82 are formed by plating, "the cost can be improved and the dimensional accuracy can be improved as compared with the case of forming a metal material. The fourth mirror 83 is as shown in FIG. The plate material of the metal material is formed in a flat shape or is formed into a flat plate shape by vapor deposition or metal such as aluminum deposit on the molded article. The opening edges of the front and rear sides in the recess 100 of the main body 10 are formed. The step 106 which is substantially equal to the thickness (the thickness in the vertical direction) of the fourth reflecting mirror 83 is placed on the step 106 by the end portions of the front and rear sides of the fourth reflecting mirror 83 with the reflecting surface facing upward. That is, as shown in Fig. 1, 'the opening of the recess 100 in the range from the wall 102 to the upper recess 1〇3 of the main body 10 is blocked by the fourth mirror 83. That is, the fourth mirror 83 is disposed in the signal processing. Between the portion 6 and the optical path. At this time, if the reflection surface of the fourth mirror 83 (the above table) When the light-emitting surface (upper surface) of the light-emitting portion 3 is lower than the light-receiving surface (upper surface) of the light-emitting portion 3, the depth of the concave portion 1 such as the signal processing circuit portion 6 and the wiring board 11 must be deepened, so that the thickness (height) of the main body 1〇 is increased. On the other hand, when the reflecting surface of the fourth reflecting mirror 83 is higher than the light emitting surface of the light-emitting portion 3, infrared rays are reflected at the end portion of the fourth reflecting mirror 83, and the loss is increased. Therefore, it is necessary to increase the light-emitting portion. 3, or the size of the light receiving unit 4 is difficult to achieve miniaturization. In contrast, in the present embodiment, the fourth reflecting mirror 83 is placed on the step 1〇6 which is substantially equal to the thickness dimension thereof, whereby the fourth reflection is performed. The reflecting surface of the mirror 83 is flush with the light emitting surface (upper surface) of the light emitting portion 3, so that the disadvantage described above can be avoided. In the gas sensor constructed as described above, the external gas is introduced into the light guide through the vent hole 201 of 201243313, and the infrared light is absorbed by the gas (4). The amount of infrared light received by the sputum is reduced. By the processing, the output signal of the i-light unit 4 can be detected to perform the signal measurement. "The concentration of the gas contained in the external gas of the gas r is the concentration of the gas ^ / ^ - - (7). The details of the signal processing performed by the circuit unit 6 are well known in the prior art, and therefore detailed descriptions thereof will be omitted. Further, in the present embodiment, the light-emitting portion 3 and the technical portion 4: 3+ conductor 稞 wafer (light-emitting) The diode wafer has: = and the optical path of the infrared rays directed from the competition portion 3 toward the light receiving portion 4 is changed to a polygonal line shape. Therefore, a conventional example in which a package type light emitting diode or a photoelectric body is used (refer to the special敎献丨,Patent Literature 2) The second 匕 本 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施 施Since the optical path (see the broken line in FIG. 1) is changed to a substantially n-shape, the optical system has a substantially ν-shaped prior art, and the height of the upper and lower (four) heights can be reduced without depending on the length of the optical path ( Low height) and, with low The previous example disclosed in the degree of comparison is 'compared from the vent hole 201 to the optical path to shorten, s which also has the advantage that the detection responsiveness to the change in the ratio of the gas to be detected in the external gas can be improved. Further, in the present embodiment, the signal processing circuit unit 6 is disposed between the light-emitting unit 3 and the light-receiving unit 4, and is placed at a position where the optical path changed by the second mirror 13 201243313. That is, in the inside of the main body 1 (in the recess 100), it is possible to effectively use the dead space to reduce the size of the main body 10 and the cover 20. Further, 'the vicinity of the center of the lower surface of the cover 20 in the left-right direction Further, at both ends of the front and rear directions, protrusions 2〇2 (see FIG. 4) having a substantially columnar shape are protruded downward, respectively, and both ends of the upper surface of the main body 10 in the left-right direction and both ends in the front-rear direction are respectively A circular fitting hole 107 (see Figs. 2 and 3) fitted to the projection 2〇2 of the cover 2 is provided. That is, the main body 1 can be realized by fitting the projection 202 to the fitting hole 107. Positioning with the cover 2〇, making the hair The alignment of the portion 3 with the first mirror 8A and the alignment of the dimming portion 4 with the second mirror 81 are facilitated. In particular, in the present embodiment, the reflecting surface of the first reflecting mirror 80 is formed in a parabolic shape. By positioning the main body 10 and the cover 20, the light-emitting portion 3 can be easily placed at the focus of the reflecting surface (paraboloid). Here, in the case where the present embodiment is assembled by an automatic assembly machine, The image of the main body 1 is imaged by a camera from above, and the mounting position of the light-emitting portion 3 or the light-receiving portion 4 is performed by a well-known image processing technique (for example, edge detection). In the present embodiment, as shown in FIG. 4, a hole 1〇8 having a diameter smaller than the fitting hole 1〇7 is provided on the bottom surface of the fitting hole 〇7 on the main body 1〇, according to the hole 1 The position of the fitting hole 1〇7 is detected by the opening edge (edge) of the crucible 8, and the position of the light-emitting portion 3 or the light-receiving portion 4 is positioned based on the position of the fitting hole 1〇7. When the position detection of the fitting hole is performed according to the opening edge of the fitting hole 1〇7 using a well-known image processing technique, the position of the light-emitting portion 3 or the surface of the light portion 4 in the depth direction and the fitting hole are affected by the 201243313. The position of the depth direction of 107 is different, and thus a position detection error due to a difference in imaging (focus) position on the captured image occurs. In order to reduce the position detection error, the Komatsu hole 108 is provided, and the position in the depth direction of the opening edge is set to be the same as or substantially the same as the position in the depth direction of the surface of the light-emitting aperture 3 or the light-receiving portion 4. That is, in the present embodiment, the positioning of the circuit block i and the optical block 2, and the positioning of the light-emitting portion 3 and the light-receiving portion 4 with respect to the mounting position of the main body 1 are performed based on the same fitting hole 107. As a result, compared with the case where the positioning is based on different parts, the light-emitting unit 3, the light-receiving unit 4, and the light guide 8 (the first mirror 8〇 and the second mirror 81) are provided. The alignment accuracy is improved. One such protrusion 2〇2 and the fitting hole 107 may be provided separately. σ However, with respect to the size of the first reflecting mirror 80, the light-emitting portion 3 is not so small as to be considered as a point light source, and therefore only a part of the infrared ray emitted from the light-emitting portion 3 passes through the reflecting surface of the ith mirror 80. The focus of (paraboloid). Therefore, it is preferable to arrange the lens 21 for collecting light on the optical path between the light-emitting portion 3 and the j-th mirror 80 as shown in FIG. 5 so that the light-converging point of the lens 21 and the focus of the first mirror 80 are made. Consistent. As a result, most of the infrared rays radiated from the light-emitting portion 3 pass through the focus of the first reflecting mirror 80, so that the infrared rays can be efficiently received by the light receiving portion 4. Furthermore, in the present embodiment, the wavelength filter 5 is attached to the main body 10, but the wavelength filter 5 may be mounted as shown in Figs. 6(a), 6(b), and 6(c). On the light receiving portion 4 (semiconductor bare wafer). For example, the rectangular flat-wavelength filter 5 is bonded to the upper surface of the light receiving unit 4 so as to cover the light receiving surface 15 201243313 40 of the light receiving unit 4. The peripheral surface of the lower surface of the device 5 is provided with a light receiving surface 40 of the frame 2 wavelength filter portion 4 and a wavelength chopper; 5 = 5 and is received by the optical gap. Further, the lower surface has a flat wavelength, and a gap between the skins is formed between the skins (Μ1, etc., the interface material 51 is connected to one (wide, Fig. 6(c)). Thus, as long as the wavelength filter, the wave device 5 is connected to the light receiving portion 4 Integrally constructed, it is no longer necessary to mount the wave recess 103' and the wavelength filter 5 and the light receiving ==2 can reduce the thickness of the body to achieve the advantage of miniaturization. Further, the plurality of light receiving units 4 and the wavelength filter 5 can be manufactured by a semiconductor wafer manufacturing process, and the manufacturing cost can be reduced. Alternatively, the wavelength filter 5 may be provided between the second reflecting mirror 8A and the second reflecting mirror 81. Here, the first mirror 80 is not limited to a parabolic shape of the reflecting surface. For example, the reflecting surface may have a spherical surface or a polygonal surface. Similarly, the second reflecting mirror 81 is not limited to a flat reflecting surface, and may be a reflecting surface having a curved surface shape. (Embodiment 2) Fig. 7 shows a gas sensor of this embodiment. The feature of this embodiment is that it has two sets of the light receiving unit 4 and the wavelength filter 5, and the other configuration is the same as that of the first embodiment. Therefore, the same components as those in the embodiment are denoted by the same reference numerals, and their illustration and description are omitted as appropriate. As shown in Fig. 7, at the right end portion on the upper surface side of the main body 1A, two lower concave portions ι4 Α and lower concave portions 104B are formed in the front-rear direction. In addition, the first light receiving unit 4A and the second light receiving unit 4B are attached to the bottom surfaces of the lower concave portion 1〇4Α and the lower concave portion 104B, and the upper surface of each of the light receiving unit 4A and the light receiving unit 4B is covered. The first wavelength filter 5A and the second wavelength filter 4B are disposed on the bottom surface of the upper concave portion 103. Here, the first wavelength filter 5A includes a wavelength range of infrared rays absorbed by the gas to be detected in the passing region, but the second wavelength filter 5B does not include infrared rays absorbed by the gas to be detected in the passing region. The wavelength domain 'eg, in the pass region, includes a wavelength domain near the wavelength domain. In other words, in the infrared rays emitted from the light-emitting unit 3, the amount of infrared rays received by the first light-receiving unit 4A by the wave device 5A is reduced by the concentration of the gas which is the target of the target light, and the The amount of infrared rays received by the second light receiving unit 4B in the two-wave filter 5B is reduced depending on the concentration of the gas to be detected. And the width of the second light-receiving part 4 Α and the second light-receiving part two = private, the wire is used to calculate the gas as the inspection gas, as in the first embodiment, the signal processing circuit ... The output of the money is calculated to calculate the gas concentration. The JJ is at the output signal level. This causes the detection accuracy of the gas concentration to decrease due to some external interference factors. I have a signal processing unit 6 based on the second light receiving signal. Part =; as described above, the difference in the signal level is obtained. (4) The light-receiving portion 4] L can suppress the detection accuracy of the gas concentration by reading the 曰 gas of the output signal level of each light-receiving portion 4 . In the first embodiment and the second embodiment, the gas sensor for detecting the concentration of a gas contained in the outside air is exemplified. The group of the light-emitting unit 3, the light-receiving unit 4, the wavelength filter 5, and the light guide unit can realize the detection of the concentration of different types of gases in each group. In this case, each of the groups may include the first light receiving unit 4A, the second light receiving unit 4B, the first wavelength filter 5A, and the second wavelength filter 4B, and may be based on the first light receiving unit. The difference between the output signal level of the portion 4A and the first light receiving portion 4B detects the concentration of each gas. Further, the first group may include the second light receiving unit 4A and the second light receiving unit 4 colors, the first wavelength filter 5A and the second wavelength filter 4B, and the second group may include the light receiving unit 4 and the wavelength filter 5 . In this case, the concentration of each gas may be detected based on the difference between the output signal levels of the first light receiving unit 4A and the second light receiving unit 4B, and the second group may be based on the light receiving unit 4 and the first slave. 2 The gas concentration is detected by the difference of the output signal levels of the light receiving unit 4B. In addition, as shown in FIG. 8 , the main body 1 is a three-dimensional wiring substrate (so-called MID substrate) that can integrally form wirings for the light-emitting portion and the light-receiving portion, and the signal processing circuit portion 6 can pass through the wiring board η. It is directly attached to the main body 10, so that further miniaturization of the main body 1 can be achieved. The above-described embodiments and modifications of the embodiments and the embodiments can be implemented in combination with each other. The preferred embodiments of the present invention have been described above. The present invention is not limited to the specific embodiments, and various modifications and changes can be made without departing from the scope of the inventions. Within the scope of the invention. 18 201243313. BRIEF DESCRIPTION OF THE DRAWINGS The objects and features of the present invention will be apparent from the accompanying drawings and appended claims. Fig. 1 is a schematic cross-sectional view showing a first embodiment. Fig. 2 is a schematic exploded perspective view of the first embodiment. Fig. 3 is a schematic perspective view of a circuit block in the first embodiment. Fig. 4 is a schematic cross-sectional view showing a main part of the first embodiment. Fig. 5 is a cross-sectional view showing another structure in the embodiment i. a), Fig. 6 (8) and Fig. 6 (c) show other configurations of the light receiving portion and the wavelength (four) in the first embodiment, Fig. 6 (a) is a schematic cross-sectional view, and Fig. 6 (b) is a schematic exploded perspective view, Fig. 6 ( And Fig. 7 is a schematic exploded perspective view of the second embodiment. Fig. 8 is a schematic perspective view showing a circuit block of another configuration of the second embodiment. [Description of main component symbols] Block 3: Light-emitting unit 4, 4A, 4B: Light-receiving unit 5: Wavelength filter 5A: First-wavelength filter 5B: Second-wavelength filter 201243313it 6: Signal processing circuit unit 7: Dust filter, device 8: Light guide Body 10: Main body 11: Wiring board 11A: Main part 11B: Extension part 12: Terminal 12A: End part 20: Cover 21: Lens 40: Light-receiving surface 50: Frame part 51: Bonding material 80: First mirror 81: 2 mirror 82: third mirror 83: fourth mirror 100, 200: recess 101: recess 102: 103: upper recess 104,104A, 104B: lower recess 105: ^ table section 20201243313 106107108201: 202: stepped protrusion fitting hole the hole of breather