WO2012140482A1 - Gas component detection device - Google Patents

Gas component detection device Download PDF

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Publication number
WO2012140482A1
WO2012140482A1 PCT/IB2012/000685 IB2012000685W WO2012140482A1 WO 2012140482 A1 WO2012140482 A1 WO 2012140482A1 IB 2012000685 W IB2012000685 W IB 2012000685W WO 2012140482 A1 WO2012140482 A1 WO 2012140482A1
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WO
WIPO (PCT)
Prior art keywords
optical path
light receiving
unit
gas component
detection device
Prior art date
Application number
PCT/IB2012/000685
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French (fr)
Japanese (ja)
Inventor
古久保 英一
俊輔 松島
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パナソニック株式会社
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Publication of WO2012140482A1 publication Critical patent/WO2012140482A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis

Definitions

  • the present invention relates to a gas component detection device that detects the concentration of a gas component using infrared absorption characteristics.
  • Cited Document 1 As a conventional gas component detection device, there are an infrared gas detector described in Patent Document 1, an infrared gas analyzer described in Patent Document 2, and the like.
  • the conventional example described in Cited Document 1 includes a housing in which a gas to be detected (for example, carbon monoxide) is introduced, a light source that irradiates infrared rays in the housing, and an infrared detector that detects infrared rays in the housing.
  • the light source consists of a light emitting diode chip (bare element), a stem on which the bare element is mounted, a package type light emitting diode composed of a sealing material for sealing the bare element, and the like from a lead terminal protruding from the stem.
  • the infrared detector is composed of a photodiode chip (bare element), a stem on which the bare element is mounted, a package-type photodiode composed of a sealing material for sealing the bare element, and is projected from the stem. A detection signal is taken out from the lead terminal.
  • a photodiode chip bare element
  • a stem on which the bare element is mounted a package-type photodiode composed of a sealing material for sealing the bare element, and is projected from the stem.
  • a detection signal is taken out from the lead terminal.
  • an ellipsoidal space is formed inside the housing, and the light emitting diode chip and the photodiode chip are located at two focal points of the ellipsoid.
  • the conventional example described in the cited document 2 includes a box-shaped metal case, an elliptical reflecting mirror disposed in the metal case, a light source and a light receiver disposed to face the reflecting surface of the elliptical reflecting mirror, and the like.
  • the metal case is provided with a vent hole, and a mixed gas containing a gas to be detected (for example, carbon dioxide) is introduced into the metal case through the vent hole.
  • a mixed gas containing a gas to be detected for example, carbon dioxide
  • the detection target which exists in a housing or a metal case according to the quantity (level) of the infrared rays received by the infrared detector or the light receiver without being absorbed in the detection target gas among the infrared rays irradiated from the light source The concentration of the gas can be detected.
  • both the light source and the infrared detector are configured by package-type components and are arranged so that their optical axes coincide with each other, the leads of the light source and the infrared detector are arranged.
  • wiring to the terminals became difficult.
  • the conventional example described in the cited document 2 since it is necessary to increase the distance between the light source and the light receiver and the elliptical reflecting mirror to some extent in order to improve the detection sensitivity, it is necessary to reduce the height dimension of the metal case (low There was a problem that it was difficult.
  • the present invention has been made in view of the above problems, and an object thereof is to simplify and reduce the height of wiring.
  • a gas component detection device includes one or more light-emitting units composed of semiconductor chips that emit infrared rays, and one or more light-receiving units composed of semiconductor chips that receive infrared rays and convert them into electrical signals.
  • a holder that holds the light emitting unit and the light receiving unit, a first optical path changing unit that changes an optical path of infrared rays emitted from the light emitting unit in a longitudinal direction of the holding unit, and a change in the first optical path changing unit
  • a second optical path changing unit that changes the optical path in a direction crossing the light receiving surface of the light receiving unit.
  • the gas component detection device further includes one or more wavelength filters including a predetermined wavelength band in a pass band, and the light receiving unit receives infrared light that passes through the wavelength filter.
  • the wavelength filter is held by the holding body together with the light receiving unit.
  • the wavelength filter is disposed on the optical path between the first optical path changing unit and the second optical path changing unit.
  • the wavelength filter is preferably attached to the light receiving unit.
  • at least one of the wavelength filters includes a first wavelength filter that includes a wavelength band that is absorbed by the gas to be detected in a pass band, and the pass band of the first wavelength filter.
  • the gas component detection device includes a signal processing circuit unit that processes an electrical signal output from the light receiving unit, and the signal processing circuit unit is sandwiched between the light emitting unit and the light receiving unit and changes the first optical path. It is preferable that the optical path is arranged at a position that does not overlap the optical path that is changed by the unit. In this gas component detection device, it is preferable that a reflecting mirror is disposed between the signal processing circuit unit and the optical path.
  • the reflecting mirror is formed in a flat plate shape having one surface as a reflecting surface, and is held by the holding body so that the reflecting surface is flush with the light emitting surface of the light emitting unit.
  • a wall that shields infrared rays emitted from the light emitting unit is provided between the light emitting unit and the signal processing circuit unit.
  • the wall is preferably formed integrally with the holding body.
  • a condensing lens is disposed on an optical path between the light emitting unit and the first optical path changing unit.
  • the holding body is preferably a three-dimensional wiring board in which wirings to the light emitting unit and the light receiving unit are integrally formed.
  • the gas component detection device includes a cover that holds the first optical path changing unit and the second optical path changing unit and is coupled to the holding body, and includes one or a plurality of covers on a coupling surface of the cover with the holding body. It is preferable that a protrusion is provided, a fitting hole for fitting with the protrusion is provided on the coupling surface of the holding body, and a hole having a smaller diameter than the fitting hole is provided on the bottom surface of the fitting hole.
  • the gas component detection device of the present invention has an effect that the wiring can be simplified and reduced in height.
  • FIG. 1 is a schematic cross-sectional view of a first embodiment. It is a schematic exploded perspective view same as the above. It is a schematic perspective view of the circuit block same as the above. It is a rough principal part sectional drawing same as the above.
  • FIG. 6 is a schematic cross-sectional view showing another configuration of the same, partially omitted. The other structure of a light-receiving part and a wavelength filter in the same as above is shown, (a) is a schematic sectional view, (b) is a schematic exploded perspective view, and (c) is a schematic sectional view of still another configuration. is there. 6 is a schematic exploded perspective view of Embodiment 2.
  • FIG. It is a schematic perspective view of the circuit block which shows another structure same as the above.
  • a gas component detection apparatus (hereinafter referred to as a gas sensor) of the present embodiment includes a circuit block 1 and an optical block 2 as shown in FIG.
  • the circuit block 1 is configured by housing a light emitting unit 3, a light receiving unit 4, a wavelength filter 5, a wiring board 11 on which a signal processing circuit unit 6 is mounted in a body 10 made of a synthetic resin molding.
  • the light emitting unit 3 includes a semiconductor bare chip that emits infrared light (for example, a light source in which a resistance element using a MEMS technology is formed on a light emitting diode chip or a semiconductor substrate).
  • the wavelength of infrared rays radiated from the light emitting unit 3 is a wavelength that is easily absorbed by a gas to be detected (for example, carbon monoxide, carbon dioxide, methane, nitrogen oxide, etc.).
  • the light receiving unit 4 includes a semiconductor bare chip (for example, a photodiode chip or a pyroelectric element) that receives infrared rays and converts the infrared rays into an electrical signal.
  • the wavelength filter 5 is composed of a bandpass filter that includes a predetermined wavelength band, for example, a wavelength band that is absorbed by the gas to be detected in the infrared wavelength emitted from the light emitting unit 3 in the passband.
  • This type of band-pass filter is also called an interference filter and mainly has a multilayer structure of dielectric films.
  • the signal processing circuit unit 6 drives the light emitting unit 3 to irradiate infrared rays, or amplifies and shapes the waveform of the signal output from the light receiving unit 4, sampling, A / D conversion, arithmetic processing, correction processing, abnormality It consists of an integrated circuit (IC) that performs signal processing such as density determination processing. As shown in FIG.
  • IC integrated circuit
  • the wiring board 11 has a rectangular main part 11A and an extension part 11B which is smaller than the main part 11A and protrudes to the left from the left rear end of the main part 11A. Is formed.
  • the signal processing circuit unit 6 is mounted substantially at the center of the main part 11A, and printed wiring (not shown) is formed on the upper surface of the main part 11A and the upper surface of the extension part 11B.
  • the body 10 is formed in a flat rectangular parallelepiped shape and is provided with a recess 100 that opens to the upper surface side, and the wiring board 11 is accommodated in the recess 100.
  • the recessed part 101 is formed in the left end part in the upper surface side of the body 10, and the light emission part 3 is mounted in the bottom face (lower surface) of this recessed part 101 (refer FIG. 1). That is, in this embodiment, the body 10 corresponds to a holding body. In addition, the light emission part 3 is electrically connected with the printed wiring of the extension part 11B by appropriate methods, such as wire bonding.
  • the right end of the recess 101 is provided with a wall 102 that is substantially the same height as the upper surface of the body 10.
  • the wall 102 is provided between the light emitting unit 3 and the signal processing circuit unit 4, and the infrared rays emitted from the light emitted from the light emitting unit 3 are shielded by the walls 102, thereby causing a signal caused by the irradiation of the infrared rays.
  • the malfunction of the processing circuit unit 6 can be suppressed.
  • the wall 102 is formed integrally with the body 10, there is an advantage that the cost and size can be reduced as compared with the case where the wall is formed separately from the body 10.
  • the upper concave portion 103 whose vertical depth is substantially equal to the thickness of the wavelength filter 5 (height in the vertical direction) and the center of the upper concave portion 103 in the front-rear direction are located.
  • a lower recess 104 is formed.
  • the light-receiving part 4 is mounted in the bottom face (lower surface) of the lower side recessed part 104, and the wavelength filter 5 is arrange
  • the light receiving portion 4 is electrically connected to the printed wiring of the main portion 11A by an appropriate method such as wire bonding.
  • an appropriate method such as wire bonding.
  • the wavelength filter 5 is held in the body 10 together with the light receiving unit 4 in the present embodiment, there is an advantage that the cost can be reduced and the size can be reduced because it is not necessary to store the wavelength filter 5 in the package.
  • a plurality of (four in the illustrated example) terminals 12 protrude side by side in the left-right direction on both front and rear side surfaces of the body 10. These terminals 12 are made of a metal plate and are insert-molded in the body 10.
  • prismatic base portions 105 are formed in the front and rear in the recess 100 (rear only shown), and the ends of the four terminals 12 protruding from the front side surface are exposed on the upper surface of the front base portion 105.
  • the end portions 12A of the four terminals 12 protruding from the rear side surface are exposed on the upper surface of the rear base portion 105.
  • the end 12A of each terminal 12 exposed on the upper surface of the base 105 is electrically connected to the printed wiring of the wiring board 11 by an appropriate method such as wire bonding.
  • the optical block 2 is configured by housing a light guide 8 inside a cover 20 made of a synthetic resin molding. (See FIG.
  • the cover 20 is formed in a rectangular parallelepiped shape in which the length dimensions of the front, rear, left and right are equal to the body 10, and is provided with a recess 200 that opens to the lower surface side.
  • the light guide 8 is placed in the recess 200. It is joined to the upper surface side of the body 10 in the housed state.
  • a rectangular vent hole 201 penetrating the cover 20 in the vertical direction is provided in the center of the upper portion of the cover 20, and outside air (a plurality of types of mixed gas including a gas to be detected; the same applies hereinafter) through the vent hole 201. Is introduced into the recess 200 (light guide 8).
  • the shape of the vent hole 201 is not limited to a rectangle, and may be other shapes such as a circle, and may be plural. However, the opening of the vent hole 201 on the upper surface of the cover 20 is covered with the dustproof filter 7 in order to prevent foreign matters other than outside air such as dust from entering the vent hole 201 (see FIG. 1).
  • the light guide 8 includes a first reflecting mirror (first optical path changing unit) 80, a second reflecting mirror (second optical path changing unit) 81, a third reflecting mirror 82, and a fourth reflecting mirror. And a mirror 83.
  • the first reflecting mirror 80 has, for example, a parabolic reflecting surface, and the optical path (optical axis) of infrared rays emitted from the light emitting unit 3 (see the broken line in FIG. 1) is the upper surface (holding surface) of the body 10. It is reflected (changed) in a direction (horizontal direction) along.
  • the second reflecting mirror 81 has, for example, a flat reflecting surface, and a direction (vertical direction) in which the optical path (optical axis) changed by the first reflecting mirror 80 intersects the light receiving surface (upper surface) of the light receiving unit 4. To reflect (change).
  • the third reflecting mirror 82 is formed in a semi-cylindrical shape in which the first reflecting mirror 80 and the second reflecting mirror 81 are arranged at both ends. However, a hole (not shown) connected to the vent hole 201 of the cover 20 is opened at the center of the third reflecting mirror 82.
  • These three reflecting mirrors 80 to 82 may be formed of a metal material and insert-molded on the cover 20, or may be formed by depositing or plating a metal such as aluminum on the inner surface of the recess 200. May be.
  • the reflecting mirrors 80 to 82 are formed by vapor deposition or plating, the cost can be reduced and the dimensional accuracy can be improved as compared with the case where the reflecting mirrors 80 to 82 are formed of a metal material. As shown in FIG.
  • the fourth reflecting mirror 83 is formed in a flat plate shape by using a metal material such as aluminum, or formed in a flat plate shape by depositing or plating a metal such as aluminum on the molded product. Is done. Steps 106 substantially equal to the thickness (vertical thickness) of the fourth reflecting mirror 83 are formed at the opening edges on the front and rear sides of the recess 100 of the body 10, and the fourth reflection is performed with the reflecting surface facing upward. Ends on both the front and rear sides of the mirror 83 are placed on the step 106. That is, as shown in FIG. 1, the opening of the recess 100 is closed by the fourth reflecting mirror 83 in the range from the wall 102 of the body 10 to the upper recess 103.
  • the fourth reflecting mirror 83 is disposed between the signal processing unit 6 and the optical path. At this time, if the reflecting surface (upper surface) of the fourth reflecting mirror 83 is lower than the light emitting surface (upper surface) of the light emitting unit 3, the depth of the recess 100 in which the signal processing circuit unit 6, the wiring board 11 and the like are accommodated is increased. This has to increase the thickness (height) of the body 10. On the other hand, if the reflecting surface of the fourth reflecting mirror 83 is higher than the light emitting surface of the light emitting unit 3, infrared rays are reflected at the end of the fourth reflecting mirror 83 and the loss increases. It becomes necessary to increase the size, which makes it difficult to reduce the size.
  • the fourth reflecting mirror 83 is placed on the step 106 that is substantially equal to the thickness dimension thereof, so that the reflecting surface of the fourth reflecting mirror 83 becomes the light emitting surface (upper surface) of the light emitting unit 3. Since they are flush with each other, inconveniences as described above can be avoided.
  • the outside air is introduced into the light guide 8 through the vent hole 201, and the infrared light emitted from the light emitting unit 3 is absorbed by the detection target gas contained in the outside air, thereby receiving the light receiving unit. 4, the amount of received infrared light decreases.
  • the signal processing circuit unit 6 processes the output signal of the light receiving unit 4 according to the amount of received infrared light, thereby detecting the concentration of the gas (gas component) to be detected contained in the outside air in the light guide 8. it can.
  • the specific contents of the signal processing performed in the signal processing circuit unit 6 for detecting the gas concentration are well known in the art and will not be described in detail.
  • the light emitting unit 3 and the light receiving unit 4 are each formed of a semiconductor bare chip (light emitting diode chip and photodiode chip), and the infrared light path from the light emitting unit 3 to the light receiving unit 4 is linear. Instead, it has been changed to a polygonal line.
  • this embodiment has an advantage that the wiring can be simplified as compared with the conventional examples (see Patent Documents 1 and 2) in which package type light emitting diodes and photodiodes are used. Further, in the present embodiment, since the optical path of infrared rays (see the broken line in FIG. 1) is changed to a substantially U shape by the first reflecting mirror 80 and the second reflecting mirror 81, it is described in Patent Document 2 in which the optical path is substantially V-shaped. Compared with the conventional example, the height dimension in the vertical direction can be reduced (lower profile) without shortening the optical path length.
  • the signal processing circuit unit 6 is located at a position that is sandwiched between the light emitting unit 3 and the light receiving unit 4 and does not overlap with the optical path changed by the first reflecting mirror 80, that is, inside the body 10 (inside the recess 100).
  • the body 10 and the cover 20 are reduced in size by effectively using the dead space.
  • substantially cylindrical projections 202 project downward from the lower surface of the cover 20 near the center in the left-right direction and at both ends in the front-rear direction (see FIG. 4).
  • circular fitting holes 107 for fitting with the protrusions 202 of the cover 20 are provided in the vicinity of the center in the left-right direction and both ends in the front-rear direction on the upper surface of the body 10 (see FIGS. 2 and 3).
  • the protrusion 202 and the fitting hole 107 are fitted to each other to enable positioning when the body 10 and the cover 20 are joined, and the light emitting unit 3 and the first reflecting mirror 80 are aligned, and the light receiving unit 4 and the second reflecting member. Positioning with the mirror 81 is facilitated.
  • the reflecting surface of the first reflecting mirror 80 is formed in a parabolic shape, and the light emitting unit is positioned at the focal point of the reflecting surface (parabolic surface) by positioning the body 10 and the cover 20. 3 can be easily arranged.
  • the light emitting unit 3 and the light receiving unit 4 are used by using a well-known image processing technique (for example, edge detection) from the image of the body 10 captured by the camera from above. Positioning of the mounting position is performed. In this embodiment, as shown in FIG.
  • a hole 108 having a smaller diameter than the fitting hole 107 is provided on the bottom surface of the fitting hole 107 in the body 10, and the fitting hole 107 is formed by an opening edge (edge) of the hole 108.
  • the positions of the light emitting unit 3 and the light receiving unit 4 are positioned with reference to the position of the fitting hole 107.
  • the position in the depth direction of the surface of the light emitting unit 3 or the light receiving unit 4 and the depth of the fitting hole 107 are detected. Since the position in the vertical direction is different, a position detection error occurs due to the difference in the image formation (focus) position in the captured image.
  • a small-diameter hole 108 is provided, and the position of the opening edge in the depth direction is the same as or substantially the same as the position in the depth direction of the surface of the light emitting unit 3 or the light receiving unit 4. That is, in the present embodiment, the positioning of the circuit block 1 and the optical block 2 and the positioning of the mounting positions of the light emitting unit 3 and the light receiving unit 4 with respect to the body 10 are performed using the same fitting hole 107 as a reference. As a result, the accuracy of alignment of the light emitting unit 3 and the light receiving unit 4 with the light guide 8 (the first reflecting mirror 80 and the second reflecting mirror 81) is compared with the case where the positions of both are different from each other. Has the advantage of improving.
  • One such projection 202 and one fitting hole 107 may be provided.
  • the light emitting unit 3 is not small enough to be regarded as a point light source with respect to the size of the first reflecting mirror 80, only a part of infrared rays radiated from the light emitting unit 3 is reflected on the reflecting surface (parabolic) of the first reflecting mirror 80. Will not pass through the focal point). Therefore, as shown in FIG. 5, a condensing lens 21 is disposed on the optical path between the light emitting unit 3 and the first reflecting mirror 80 so that the condensing point of the lens 21 and the focus of the first reflecting mirror 80 coincide. It is preferable.
  • the wavelength filter 5 is attached to the body 10 in this embodiment, the wavelength filter 5 may be attached to the light receiving unit 4 (semiconductor bare chip) as shown in FIG.
  • the rectangular flat wavelength filter 5 is bonded to the upper surface of the light receiving unit 4 so as to cover the light receiving surface 40 of the light receiving unit 4.
  • a frame portion 50 is provided on the periphery of the lower surface of the wavelength filter 5, and a gap is formed between the light receiving surface 40 of the light receiving portion 4 and the lower surface of the wavelength filter 5 by the frame portion 50.
  • the wavelength filter 5 having a flat bottom surface may be bonded with a bonding material 51 such as a low melting glass, a low melting metal, or a polymer (see FIG. 6C). If the wavelength filter 5 is configured integrally with the light receiving unit 4 in this way, the upper concave portion 103 for attaching the wavelength filter 5 becomes unnecessary, and the gap between the wavelength filter 5 and the light receiving surface is reduced. There is an advantage that the thickness of the body 10 can be reduced to reduce the size (lower profile). Further, a large number of light receiving units 4 and wavelength filters 5 can be manufactured at once using a manufacturing process of a semiconductor wafer, and manufacturing costs can be reduced. Alternatively, the wavelength filter 5 may be provided between the first reflecting mirror 80 and the second reflecting mirror 81.
  • a bonding material 51 such as a low melting glass, a low melting metal, or a polymer
  • the first reflecting mirror 80 is not limited to a reflecting surface having a parabolic shape, and may have a reflecting surface having a spherical shape or a polygonal shape, for example.
  • the second reflecting mirror 81 is not limited to a flat reflecting surface, and may have a curved reflecting surface.
  • FIG. 2 The gas sensor of this embodiment is shown in FIG.
  • the present embodiment is characterized in that two sets of the light receiving unit 4 and the wavelength filter 5 are provided, and other configurations are the same as those in the first embodiment. Therefore, the same components as those in the first embodiment are denoted by the same reference numerals, and illustration and description thereof are omitted as appropriate. As shown in FIG.
  • the first light receiving unit 4A and the second light receiving unit 4B are mounted on the bottom surfaces of the lower recesses 104A and 104B, respectively, and the first wavelength filter 5A and the second wavelength filter 5A are covered so as to cover the top of the light receiving units 4A and 4B.
  • the wavelength filter 4B is disposed on the bottom surface of the upper recess 103.
  • the first wavelength filter 5A includes the infrared wavelength range absorbed by the detection target gas in the pass band
  • the second wavelength filter 5B uses the infrared wavelength range absorbed by the detection target gas as the pass band.
  • the passband includes a wavelength range near the wavelength range. That is, among the infrared rays radiated from the light emitting unit 3, the amount of infrared rays passing through the first wavelength filter 5A and received by the first light receiving unit 4A decreases according to the concentration of the gas to be detected. The amount of infrared light that passes through the two-wavelength filter 5B and is received by the second light receiving unit 4B does not decrease according to the concentration of the gas to be detected. Then, the signal processing circuit unit 6 calculates the difference between the output signal levels of the first light receiving unit 4A and the second light receiving unit 4B, and calculates the concentration of the detection target gas based on this difference.
  • the signal processing circuit unit 6 calculates the gas concentration based on the output signal level of the light receiving unit 4 as in the first embodiment, the gas concentration is changed when the output signal level of the light receiving unit 4 fluctuates due to some disturbance factor. There is a possibility that the detection accuracy is lowered.
  • the signal processing circuit unit 6 calculates the concentration of the gas to be detected based on the difference between the output signal levels of the first light receiving unit 4A and the second light receiving unit 4B as described above, the output of each light receiving unit 4 It is possible to cancel the decrease in gas concentration detection accuracy by offsetting the signal level fluctuation.
  • the gas sensor that detects the concentration of one kind of gas contained in the outside air is illustrated, but a plurality of sets of the light emitting unit 3, the light receiving unit 4, the wavelength filter 5, and the light guide 8 are provided. Then, the gas sensor which detects the density
  • the first set may include the first light receiving unit 4A, the second light receiving unit 4B, the first wavelength filter 5A, and the second wavelength filter 4B, and the second set may include the light receiving unit 4 and the wavelength filter 5.
  • the first set detects the concentration of each gas from the difference between the output signal levels of the first light receiving part 4A and the second light receiving part 4B
  • the second set is the light receiving part 4 and the second light receiving part of the first set. It is also possible to detect the concentration of each gas from the difference in the output signal level of 4B.
  • the body 10 is a three-dimensional wiring board (so-called MID board) capable of integrally forming the wiring to the light emitting part and the light receiving part as shown in FIG.
  • the signal processing circuit part 6 does not go through the wiring board 11 but the body. Therefore, the body 10 can be further miniaturized. All the above-mentioned embodiments, the explanation examples and the modification examples in the embodiments can be combined with each other.
  • the preferred embodiments of the present invention have been described above, but the present invention is not limited to these specific embodiments, and various modifications and variations that do not depart from the scope of the claims are possible. It belongs to the category of the present invention.

Abstract

In order to simplify and reduce the dimensions of wiring, a light-emitting section (3) and a light receiving section (4) are each formed from a semi-conductor bare chip (a light-emitting diode chip and a photo-diode chip), and the optical path of the infrared light from the light-emitting section (3) to the light-receiving section (4) is altered so as to be a polygonal line rather than a straight line. Therefore, in comparison to conventional examples (see patent documents 1 and 2) in which package-type light-emitting diodes and photo-diodes are used, this embodiment has the benefit of simplifying the wiring. Additionally, in this embodiment the optical path of the infrared light (see the dashed line in fig. 1) is altered by a first reflecting mirror (80) and a second reflecting mirror (81) so as to be approximately a 'C' shape, and thus the dimensions of the vertical height of the optical path can be reduced (given a low profile) without reducing the length of the optical path, in contrast to the conventional example disclosed in document 2 in which the optical path is approximately a 'V' shape.

Description

気体成分検出装置Gas component detector
 本発明は、赤外線の吸収特性を利用して気体成分の濃度を検出する気体成分検出装置に関する。 The present invention relates to a gas component detection device that detects the concentration of a gas component using infrared absorption characteristics.
 従来の気体成分検出装置として、特許文献1に記載されている赤外線式ガス検出器や特許文献2に記載されている赤外線ガス分析計などがある。
 引用文献1記載の従来例は、検出対象の気体(例えば、一酸化炭素など)が内部に導入されるハウジングと、ハウジング内に赤外線を照射する光源と、ハウジング内の赤外線を検出する赤外線検出器とを備える。光源は、発光ダイオードチップ(ベア素子)、ベア素子が実装されるステム、ベア素子を封止する封止材などで構成されるパッケージ型の発光ダイオードからなり、ステムに突設されるリード端子から給電されて発光する。また、赤外線検出器は、フォトダイオードチップ(ベア素子)、ベア素子が実装されるステム、ベア素子を封止する封止材などで構成されるパッケージ型のフォトダイオードからなり、ステムに突設されるリード端子から検出信号が取り出される。この従来例では、ハウジングの内部に楕円体形状の空間が形成され、当該楕円体の2つの焦点に発光ダイオードチップ並びにフォトダイオードチップが位置している。一方、引用文献2記載の従来例は、箱形の金属ケース、金属ケース内に配設される楕円反射鏡、楕円反射鏡の反射面と対向して配置される光源及び受光器などを備える。金属ケースには通気孔が設けられ、検出対象の気体(例えば、二酸化炭素)を含む混合気体が当該通気孔を通して金属ケース内に導入される。そして、光源から照射される赤外線のうちで検出対象の気体に吸収されずに赤外線検出器や受光器で受光される赤外線の量(レベル)に応じて、ハウジングや金属ケース内に存在する検出対象の気体の濃度を検出することができる。
特開2006−275980号公報 特開平9−184803号公報
As a conventional gas component detection device, there are an infrared gas detector described in Patent Document 1, an infrared gas analyzer described in Patent Document 2, and the like.
The conventional example described in Cited Document 1 includes a housing in which a gas to be detected (for example, carbon monoxide) is introduced, a light source that irradiates infrared rays in the housing, and an infrared detector that detects infrared rays in the housing. With. The light source consists of a light emitting diode chip (bare element), a stem on which the bare element is mounted, a package type light emitting diode composed of a sealing material for sealing the bare element, and the like from a lead terminal protruding from the stem. Power is emitted to emit light. The infrared detector is composed of a photodiode chip (bare element), a stem on which the bare element is mounted, a package-type photodiode composed of a sealing material for sealing the bare element, and is projected from the stem. A detection signal is taken out from the lead terminal. In this conventional example, an ellipsoidal space is formed inside the housing, and the light emitting diode chip and the photodiode chip are located at two focal points of the ellipsoid. On the other hand, the conventional example described in the cited document 2 includes a box-shaped metal case, an elliptical reflecting mirror disposed in the metal case, a light source and a light receiver disposed to face the reflecting surface of the elliptical reflecting mirror, and the like. The metal case is provided with a vent hole, and a mixed gas containing a gas to be detected (for example, carbon dioxide) is introduced into the metal case through the vent hole. And the detection target which exists in a housing or a metal case according to the quantity (level) of the infrared rays received by the infrared detector or the light receiver without being absorbed in the detection target gas among the infrared rays irradiated from the light source The concentration of the gas can be detected.
JP 2006-275980 A JP-A-9-184803
 ところで、引用文献1記載の従来例では、光源及び赤外線検出器が何れもパッケージ型の部品で構成され、且つ互いの光軸が一致するように配置されているため、光源及び赤外線検出器のリード端子に対する配線が困難になるという問題があった。また、引用文献2記載の従来例では、検出感度の向上のために光源及び受光器と楕円反射鏡との距離をある程度大きくとる必要があるので、金属ケースの高さ寸法を小さくすること(低背化)が難しいという問題があった。
 本発明は、上記課題に鑑みて為されたものであり、配線の簡単化及び低背化を図ることを目的とする。
By the way, in the conventional example described in the cited document 1, since both the light source and the infrared detector are configured by package-type components and are arranged so that their optical axes coincide with each other, the leads of the light source and the infrared detector are arranged. There was a problem that wiring to the terminals became difficult. Further, in the conventional example described in the cited document 2, since it is necessary to increase the distance between the light source and the light receiver and the elliptical reflecting mirror to some extent in order to improve the detection sensitivity, it is necessary to reduce the height dimension of the metal case (low There was a problem that it was difficult.
The present invention has been made in view of the above problems, and an object thereof is to simplify and reduce the height of wiring.
 本発明の一実施形態による気体成分検出装置は、赤外線を放射する半導体チップからなる1乃至複数の発光部と、赤外線を受光して電気信号に変換する半導体チップからなる1乃至複数の受光部と、前記発光部及び前記受光部を保持する保持体と、前記発光部から放射される赤外線の光路を前記保持体の長手方向へ変更する第1光路変更部と、当該第1光路変更部で変更された前記光路を前記受光部の受光面と交差する方向へ変更する第2光路変更部とを備えることを特徴とする。
 この気体成分検出装置において、所定の波長帯域を通過域に含む1乃至複数の波長フィルタをさらに備え、前記受光部は前記波長フィルタを通過する赤外線を受光することが好ましい。
 この気体成分検出装置において、前記波長フィルタは前記受光部とともに前記保持体に保持されることが好ましい。
 この気体成分検出装置において、前記波長フィルタは前記第1光路変更部と前記第2光路変更部の間の前記光路上に配置されることが好ましい。
 この気体成分検出装置において、前記前記波長フィルタは前記受光部に取り付けられることが好ましい。
 この気体成分検出装置において、前記波長フィルタ中少なくとも1つの波長フィルタは、検出対象である気体に吸収される波長帯域を通過域に含む第1波長フィルタと、当該第1波長フィルタの前記通過域を含まず且つ当該通過域近傍の波長帯域を通過域に含む第2波長フィルタとを含み、前記受光部中少なくとも1つの受光部は、前記第1波長フィルタを通過する赤外線を受光する前記第1受光部と、前記第2波長フィルタを通過する赤外線を受光する第2受光部とを含むことが好ましい。
 この気体成分検出装置において、前記受光部から出力される電気信号を信号処理する信号処理回路部を備え、当該信号処理回路部は、前記発光部と前記受光部に挟まれ且つ前記第1光路変更部で変更される光路と重ならない位置に配置されることが好ましい。
 この気体成分検出装置において、前記信号処理回路部と前記光路との間に反射鏡が配置されることが好ましい。
 この気体成分検出装置において、前記反射鏡は、一面を反射面とする平板状に形成され、当該反射面が前記発光部の発光面と面一となるように前記保持体に保持されることが好ましい。
 この気体成分検出装置において、前記発光部と前記信号処理回路部との間に、前記発光部から放射される赤外線を遮蔽する壁が設けられることが好ましい。
 この気体成分検出装置において、前記壁は前記保持体と一体に形成されることが好ましい。
 この気体成分検出装置において、前記発光部と前記第1光路変更部の間の光路上に集光用のレンズが配置されることが好ましい。
 この気体成分検出装置において、前記保持体は、前記発光部及び前記受光部への配線が一体に形成される立体配線基板であることが好ましい。
 この気体成分検出装置において、前記第1光路変更部及び前記第2光路変更部を保持して前記保持体と結合されるカバーを備え、当該カバーの前記保持体との結合面に1乃至複数の突起が設けられ、当該突起と嵌合する嵌合孔が前記保持体の前記結合面に設けられ、当該嵌合孔よりも小径の孔が当該嵌合孔の底面に設けられることが好ましい。
A gas component detection device according to an embodiment of the present invention includes one or more light-emitting units composed of semiconductor chips that emit infrared rays, and one or more light-receiving units composed of semiconductor chips that receive infrared rays and convert them into electrical signals. , A holder that holds the light emitting unit and the light receiving unit, a first optical path changing unit that changes an optical path of infrared rays emitted from the light emitting unit in a longitudinal direction of the holding unit, and a change in the first optical path changing unit And a second optical path changing unit that changes the optical path in a direction crossing the light receiving surface of the light receiving unit.
Preferably, the gas component detection device further includes one or more wavelength filters including a predetermined wavelength band in a pass band, and the light receiving unit receives infrared light that passes through the wavelength filter.
In this gas component detection device, it is preferable that the wavelength filter is held by the holding body together with the light receiving unit.
In this gas component detection device, it is preferable that the wavelength filter is disposed on the optical path between the first optical path changing unit and the second optical path changing unit.
In this gas component detection device, the wavelength filter is preferably attached to the light receiving unit.
In this gas component detection device, at least one of the wavelength filters includes a first wavelength filter that includes a wavelength band that is absorbed by the gas to be detected in a pass band, and the pass band of the first wavelength filter. And a second wavelength filter that includes a wavelength band in the vicinity of the passband in the passband, wherein at least one of the light receivers receives the infrared light that passes through the first wavelength filter. And a second light receiving portion that receives infrared light that passes through the second wavelength filter.
The gas component detection device includes a signal processing circuit unit that processes an electrical signal output from the light receiving unit, and the signal processing circuit unit is sandwiched between the light emitting unit and the light receiving unit and changes the first optical path. It is preferable that the optical path is arranged at a position that does not overlap the optical path that is changed by the unit.
In this gas component detection device, it is preferable that a reflecting mirror is disposed between the signal processing circuit unit and the optical path.
In this gas component detection device, the reflecting mirror is formed in a flat plate shape having one surface as a reflecting surface, and is held by the holding body so that the reflecting surface is flush with the light emitting surface of the light emitting unit. preferable.
In this gas component detection device, it is preferable that a wall that shields infrared rays emitted from the light emitting unit is provided between the light emitting unit and the signal processing circuit unit.
In this gas component detection device, the wall is preferably formed integrally with the holding body.
In this gas component detection device, it is preferable that a condensing lens is disposed on an optical path between the light emitting unit and the first optical path changing unit.
In this gas component detection device, the holding body is preferably a three-dimensional wiring board in which wirings to the light emitting unit and the light receiving unit are integrally formed.
The gas component detection device includes a cover that holds the first optical path changing unit and the second optical path changing unit and is coupled to the holding body, and includes one or a plurality of covers on a coupling surface of the cover with the holding body. It is preferable that a protrusion is provided, a fitting hole for fitting with the protrusion is provided on the coupling surface of the holding body, and a hole having a smaller diameter than the fitting hole is provided on the bottom surface of the fitting hole.
発明の効果The invention's effect
 本発明の気体成分検出装置は、配線の簡単化及び低背化を図ることができるという効果がある。 The gas component detection device of the present invention has an effect that the wiring can be simplified and reduced in height.
 本発明の目的及び特徴は以下のような添付図面と好ましい実施例の説明により明確になる。
実施形態1の概略的な断面図である。 同上の概略的な分解斜視図である。 同上における回路ブロックの概略的な斜視図である。 同上の概略的な要部断面図である。 同上における別の構成を示し、一部省略した概略的な断面図である。 同上における受光部と波長フィルタの別の構成を示し、(a)は概略的な断面図、(b)は概略的な分解斜視図、(c)はさらに別の構成の概略的な断面図である。 実施形態2の概略的な分解斜視図である。 同上の別の構成を示す回路ブロックの概略的な斜視図である。
The objects and features of the present invention will become apparent from the following drawings and description of preferred embodiments.
1 is a schematic cross-sectional view of a first embodiment. It is a schematic exploded perspective view same as the above. It is a schematic perspective view of the circuit block same as the above. It is a rough principal part sectional drawing same as the above. FIG. 6 is a schematic cross-sectional view showing another configuration of the same, partially omitted. The other structure of a light-receiving part and a wavelength filter in the same as above is shown, (a) is a schematic sectional view, (b) is a schematic exploded perspective view, and (c) is a schematic sectional view of still another configuration. is there. 6 is a schematic exploded perspective view of Embodiment 2. FIG. It is a schematic perspective view of the circuit block which shows another structure same as the above.
 以下、本発明の実施形態を本明細書の一部を成す添付図面を参照してより詳細に説明する。図面全体において同一又は類似する部分については同一参照符号を付して説明を省略する。
 (実施形態1)
 本実施形態の気体成分検出装置(以下、ガスセンサと呼ぶ。)は、図2に示すように回路ブロック1と光学ブロック2で構成されている。なお、以下の説明では、図2において上下左右前後を規定する。
 回路ブロック1は、合成樹脂成形体からなるボディ10の内部に発光部3、受光部4、波長フィルタ5、信号処理回路部6を実装した配線板11などが収納されて構成される。発光部3は、赤外線を放射する半導体ベアチップ(例えば、発光ダイオードチップや半導体基板上にMEMS技術を用いた抵抗素子が形成されてなる光源)からなる。ただし、発光部3から放射される赤外線の波長は、検出対象の気体(例えば、一酸化炭素や二酸化炭素、メタン、窒素酸化物など)に吸収され易い波長である。また受光部4は、赤外線を受光して電気信号に変換する半導体ベアチップ(例えば、フォトダイオードチップや焦電素子)からなる。波長フィルタ5は、所定の波長帯域、例えば、発光部3から放射される赤外線の波長の中で検出対象である気体に吸収される波長帯域を通過域に含むバンドパスフィルタからなる。この種のバンドパスフィルタは干渉フィルタとも呼ばれ、主に誘電体膜の多層構造を有している。信号処理回路部6は、発光部3を駆動して赤外線を照射させたり、受光部4から出力される信号に対して増幅や波形整形、サンプリング、A/D変換、演算処理、補正処理、異常濃度判定処理などの信号処理を行う集積回路(IC)からなる。
 配線板11は、図3に示すように長方形状の主部11Aと、主部11Aよりも小さい長方形状であって主部11Aの左後端より左方へ突出する延長部11Bとが一体に形成されている。主部11Aのほぼ中央に信号処理回路部6が実装され、図示しないプリント配線が主部11Aの上面及び延長部11Bの上面に形成されている。
 ボディ10は、扁平な直方体形状に形成されるとともに上面側に開口する凹所100が設けられ、この凹所100内に配線板11を収納する。また、ボディ10の上面側における左端部には、凹部101が形成されており、この凹部101の底面(下面)に発光部3が実装される(図1参照)。すなわち、本実施形態ではボディ10が保持体に相当する。なお、発光部3は、ワイヤボンディングなどの適宜の方法により、延長部11Bのプリント配線と電気的に接続される。ここで、凹部101の右端にはボディ10の上面とほぼ同じ高さの壁102が設けられている。つまり、発光部3と信号処理回路部4との間には壁102が設けられ、発光部3から放射される赤外線が壁102で遮蔽されることにより、赤外線が照射されることに起因した信号処理回路部6の誤動作を抑制することができる。しかも、このような壁102がボディ10と一体に形成されているため、壁がボディ10と別体に形成される場合と比較して低コスト化及び小型化が図れるという利点がある。
 一方、ボディ10の上面側における右端部には、上下方向の深さが波長フィルタ5の厚み(上下方向の高さ)にほぼ等しい上側凹部103と、上側凹部103の前後方向における中央に位置する下側凹部104とが形成されている。そして、下側凹部104の底面(下面)に受光部4が実装され、受光部4の上方を覆うように上側凹部103の中央に波長フィルタ5が配置される(図1参照)。したがって、受光部4に向かう赤外線は波長フィルタ5を通過して該受光部4に受光される。なお、受光部4は、ワイヤボンディングなどの適宜の方法により、主部11Aのプリント配線と電気的に接続される。ここで、本実施形態では受光部4とともに波長フィルタ5をボディ10に保持させているので、波長フィルタ5をパッケージに収納する必要が無いことから低コスト化及び小型化が図れるという利点がある。
 ボディ10の前後両側面には、図2及び図3に示すように複数(図示例では4つ)の端子12が左右方向に並んで突出している。これらの端子12は金属板からなり、ボディ10にインサート成形されている。また、凹所100内の前方及び後方に角柱状の台部105がそれぞれ形成され(図示は後方のみ)、前側面に突出する4つの端子12の端部が前方の台部105の上面に露出し、後側面に突出する4つの端子12の端部12Aが後方の台部105の上面に露出している。そして、台部105上面に露出する各端子12の端部12Aが、ワイヤボンディングなどの適宜の方法で配線板11のプリント配線と電気的に接続される。
 光学ブロック2は、合成樹脂成形体からなるカバー20の内部に導光体8が収納されて構成される。(図1参照)カバー20は、前後左右の長さ寸法がボディ10と等しい直方体形状に形成されるとともに下面側に開口する凹所200が設けられ、この凹所200内に導光体8を収納した状態でボディ10の上面側に接合される。また、カバー20上部の中央には、上下方向にカバー20を貫通する矩形の通気孔201が設けられ、通気孔201を通して外気(検出対象の気体を含む複数種類の混合気体。以下、同じ。)が凹所200(導光体8)内に導入される。なお、通気孔201の形状は矩形に限定されず、円形等の他の形状であってもよく、且つ複数個であってもよい。ただし、塵埃などの外気以外の異物が通気孔201に進入することを防ぐため、カバー20上面の通気孔201の開口は防塵フィルタ7で覆われている(図1参照)。
 導光体8は、図1に示すように第1反射鏡(第1光路変更部)80と、第2反射鏡(第2光路変更部)81と、第3反射鏡82と、第4反射鏡83とで構成される。第1反射鏡80は、例えば、放物面形状の反射面を有し、発光部3から放射される赤外線の光路(光軸)(図1における破線参照)をボディ10の上面(保持面)に沿った方向(左右方向)へ反射(変更)するものである。また第2反射鏡81は、例えば、平坦な反射面を有し、第1反射鏡80で変更された光路(光軸)を受光部4の受光面(上面)と交差する方向(上下方向)へ反射(変更)するものである。また、第3反射鏡82は第1反射鏡80と第2反射鏡81が両端に配置された半円筒形状に形成されている。ただし、第3反射鏡82の中央部には、カバー20の通気孔201と繋がる孔(図示せず)が開口している。なお、これら3つの反射鏡80~82は、金属材料で形成されてカバー20にインサート成形されてもよいし、あるいは、凹所200の内面にアルミニウムなどの金属が蒸着あるいはめっきされることで形成されてもよい。特に、反射鏡80~82が蒸着やめっきによって形成される場合、金属材料で形成される場合と比較して、低コスト化と寸法精度の向上を図ることができる。
 第4反射鏡83は、図2に示すようにアルミニウムなどの金属材料の板材で平板状に構成されるか、若しくは、成形品にアルミニウムなどの金属が蒸着又はめっきされることで平板状に形成される。ボディ10の凹所100における前後両側の開口縁に、第4反射鏡83の厚み(上下方向の厚み)とほぼ等しい段差106が形成されており、反射面を上に向けた状態で第4反射鏡83の前後両側の端部が段差106上に載置される。つまり、図1に示すようにボディ10の壁102から上側凹部103までの範囲で、凹所100の開口が第4反射鏡83で塞がれることになる。つまり、第4反射鏡83は信号処理部6と光路との間に配置される。このとき、第4反射鏡83の反射面(上面)が発光部3の発光面(上面)よりも低くなると信号処理回路部6や配線板11などが収納される凹所100の深さを深くしなければならないためにボディ10の厚み(高さ)が増してしまう。一方、第4反射鏡83の反射面が発光部3の発光面よりも高くなると第4反射鏡83の端部で赤外線が反射して損失が増えてしまうので、発光部3や受光部4のサイズを大きくする必要が生じて小型化が困難になる。これに対して本実施形態では、第4反射鏡83がその厚み寸法とほぼ等しい段差106に載置されることで第4反射鏡83の反射面が発光部3の発光面(上面)とが面一となっているので、上述のような不都合を回避することができる。
 上述のように構成されるガスセンサでは、通気孔201を通して導光体8内に外気が導入され、発光部3から放射される赤外線が外気に含まれる検出対象の気体に吸収されることで受光部4の赤外線受光量が減少する。したがって、赤外線受光量に応じた受光部4の出力信号が信号処理回路部6で信号処理されることにより、導光体8内の外気に含まれる検出対象の気体(気体成分)の濃度が検出できる。ただし、気体濃度を検出するために信号処理回路部6で行われる信号処理の具体的な内容については、従来周知であるから詳細な説明は省略する。
 而して、本実施形態では、発光部3及び受光部4がそれぞれ半導体ベアチップ(発光ダイオードチップ及びフォトダイオードチップ)で構成されるとともに、発光部3から受光部4への赤外線の光路が直線状ではなく折れ線状に変更されている。したがって、パッケージ型の発光ダイオードやフォトダイオードが使用される従来例(特許文献1,2参照)に比べて、本実施形態は配線の簡単化が図れるという利点がある。また、本実施形態では第1反射鏡80と第2反射鏡81によって赤外線の光路(図1の破線参照)が略コ字形に変更されているので、光路が略V字形である特許文献2記載の従来例と比較して、光路長を短縮せずに上下方向の高さ寸法を小型化(低背化)することができる。しかも、低背化により、特許文献2記載の従来例と比較して通気孔201から光路までの距離が短縮されるので、外気中における検出対象気体の割合変化に対する検出応答性の向上が図れるという利点もある。
 また本実施形態では、発光部3と受光部4に挟まれ且つ第1反射鏡80で変更される光路と重ならない位置、すなわち、ボディ10の内部(凹所100内)に信号処理回路部6を配置することにより、デッドスペースを有効利用してボディ10及びカバー20の小型化を図っている。
 ところで、カバー20の下面における左右方向の中央付近且つ前後方向の両端に、略円柱形状の突起202がそれぞれ下向きに突設されている(図4参照)。また、ボディ10の上面における左右方向の中央付近且つ前後方向の両端に、カバー20の突起202と嵌合する円形の嵌合孔107がそれぞれ設けられている(図2及び図3参照)。すなわち、突起202と嵌合孔107を嵌合させることでボディ10とカバー20の接合時の位置決めを可能とし、発光部3と第1反射鏡80との位置合わせ及び受光部4と第2反射鏡81との位置合わせを容易にしている。特に本実施形態では、第1反射鏡80の反射面が放物面形状に形成されており、ボディ10とカバー20が位置決めされることで反射面(放物面)の焦点の位置に発光部3を容易に配置することができる。
 ここで、本実施形態が自動組立機によって組み立てられる場合、上方からカメラで撮像されるボディ10の画像から周知の画像処理技術(例えば、エッジ検出)を利用して、発光部3や受光部4の実装位置の位置決めが行われる。本実施形態では、図4に示すようにボディ10における嵌合孔107の底面に、嵌合孔107よりも小径の孔108が設けられ、この孔108の開口縁(エッジ)によって嵌合孔107の位置が検出され、嵌合孔107の位置を基準にして発光部3や受光部4の実装位置が位置決めされる。周知の画像処理技術を用いて嵌合穴107の開口縁によって嵌合穴107の位置検出を行った場合、発光部3や受光部4の表面の深さ方向の位置と嵌合穴107の深さ方向の位置が異なるため、撮像画像における結像(ピント)位置が異なることによる位置検出誤差が発生する。この位置検出誤差を低減するために小径の孔108を設け、その開口縁の深さ方向の位置が発光部3や受光部4の表面の深さ方向の位置と同じかほぼ同一に設けられる。つまり、本実施形態では、回路ブロック1と光学ブロック2の位置決めと、ボディ10に対する発光部3及び受光部4の実装位置の位置決めとが同じ嵌合孔107を基準として行われる。その結果、双方の位置決めが異なる部位を基準とする場合に比較して、発光部3及び受光部4と導光体8(第1反射鏡80及び第2反射鏡81)との位置合わせの精度が向上するという利点がある。このような突起202と嵌合穴107はそれぞれ一つずつ設けても良い。
 ところで、第1反射鏡80の大きさに対して発光部3が点光源とみなせる程度に小さくないため、発光部3から放射される赤外線の一部しか第1反射鏡80の反射面(放物面)の焦点を通らないことになる。そこで、図5に示すように発光部3と第1反射鏡80の間の光路上に集光用のレンズ21を配置し、レンズ21の集光点と第1反射鏡80の焦点を一致させることが好ましい。このようにすれば、発光部3から放射される赤外線の大部分が第1反射鏡80の焦点を通ることになるから、赤外線を効率よく受光部4に受光させることができる。
 なお、本実施形態では波長フィルタ5がボディ10に取り付けられているが、図6に示すように波長フィルタ5が受光部4(半導体ベアチップ)に取り付けられても構わない。例えば、矩形平板状の波長フィルタ5が、受光部4の受光面40を覆うように受光部4の上面に接合される。ただし、波長フィルタ5下面の周縁に枠部50が設けられており、この枠部50によって受光部4の受光面40と波長フィルタ5の下面との間に隙間が形成されている。なお、下面が平坦である波長フィルタ5が、低融点ガラスや低融点金属、ポリマーなどの接合材51で接合されても構わない(図6(c)参照)。このように波長フィルタ5が受光部4と一体に構成されれば、波長フィルタ5を取り付けるための上側凹部103が不要となり、しかも、波長フィルタ5と受光面との間の隙間が小さくなるので、ボディ10の厚みを減らして小型化(低背化)が図れるという利点がある。さらに、多数の受光部4と波長フィルタ5が半導体ウェハの製造プロセスを利用して一括して製造可能となり、製造コストの削減が可能になる。あるいは、第1反射鏡80と第2反射鏡81の間に波長フィルタ5が設けられてもよい。
 ここで、第1反射鏡80は反射面が放物面形状のものに限定されず、例えば、球面形状や多角形面形状の反射面を有するものであっても構わない。同様に、第2反射鏡81は反射面が平坦なものに限定されず、曲面形状の反射面を有するものであっても構わない。
 (実施形態2)
 本実施形態のガスセンサを図7に示す。本実施形態は、受光部4と波長フィルタ5の組を2組備える点に特徴があり、その他の構成については実施形態1と共通である。故に、実施形態1と共通の構成要素には同一の符号を付して適宜図示及び説明を省略する。
 図7に示すように、ボディ10の上面側における右端部において、2つの下側凹部104A,104Bが前後方向に並べて形成される。そして、各下側凹部104A,104Bの底面に第1受光部4Aと第2受光部4Bがそれぞれ実装されるとともに、各受光部4A,4Bの上方を覆うように第1波長フィルタ5Aと第2波長フィルタ4Bが上側凹部103の底面に配置される。
 ここで、第1波長フィルタ5Aは、検出対象の気体が吸収する赤外線の波長域を通過域に含むが、第2波長フィルタ5Bは、検出対象の気体が吸収する赤外線の波長域を通過域に含まず、例えば、当該波長域の近傍の波長域を通過域に含んでいる。つまり、発光部3から放射される赤外線のうち、第1波長フィルタ5Aを通過して第1受光部4Aで受光される赤外線量が検出対象の気体の濃度に応じて減少するのに対し、第2波長フィルタ5Bを通過して第2受光部4Bで受光される赤外線量は検出対象の気体の濃度に応じて減少しない。そして、信号処理回路部6では、第1受光部4Aと第2受光部4Bの出力信号レベルの差分をとり、この差分に基づいて検出対象の気体の濃度を演算する。
 すなわち、実施形態1のように受光部4の出力信号レベルに基づいて信号処理回路部6が気体濃度を演算した場合、受光部4の出力信号レベルが何らかの外乱要因によって変動したときに気体濃度の検出精度が低下してしまう虞がある。一方、上述のように信号処理回路部6が第1受光部4Aと第2受光部4Bの出力信号レベルの差分に基づいて検出対象の気体の濃度を演算すれば、それぞれの受光部4の出力信号レベルの変動分を相殺して気体濃度の検出精度の低下を抑制することができる。
 なお、実施形態1,2では外気に含まれる1種類の気体の濃度を検出するガスセンサを例示したが、発光部3と受光部4と波長フィルタ5と導光体8の組を複数組備えていれば、それぞれの組毎に異なる種類の気体の濃度を検出するガスセンサが実現できる。そして、このような場合においても、各組毎に第1受光部4Aと第2受光部4Bと第1波長フィルタ5Aと第2波長フィルタ4Bを備え、第1受光部4Aと第2受光部4Bの出力信号レベルの差分からそれぞれの気体の濃度を検出しても構わない。また、第1組は第1受光部4Aと第2受光部4B及び第1波長フィルタ5Aと第2波長フィルタ4Bを備え、第2組は受光部4及び波長フィルタ5を備えても良い。この場合、第1組は第1受光部4Aと第2受光部4Bの出力信号レベルの差分からそれぞれの気体の濃度を検出し、第2組は受光部4と第1組の第2受光部4Bの出力信号レベルの差分からそれぞれの気体の濃度を検出することもできる。
 ところで、図8に示すようにボディ10を発光部及び受光部への配線を一体に形成できる立体配線基板(いわゆるMID基板)とすれば、信号処理回路部6が配線板11を介さずにボディ10に直接実装可能となるので、ボディ10をさらに小型化することができる。
 上述のすべての実施形態、実施形態での説明例及び変形例は互いに組み合わせて行うことができる。以上、本発明の好ましい実施形態が説明されているが、本発明はこれらの特定の実施形態に限られるものではなく、請求範囲の範疇から離脱しない多様な変更及び変形が可能であり、それも本発明の範疇内に属する。
Embodiments of the present invention will now be described in more detail with reference to the accompanying drawings, which form a part of this specification. The same or similar parts throughout the drawings are denoted by the same reference numerals, and the description thereof is omitted.
(Embodiment 1)
A gas component detection apparatus (hereinafter referred to as a gas sensor) of the present embodiment includes a circuit block 1 and an optical block 2 as shown in FIG. In the following description, up, down, left, and right front and back are defined in FIG.
The circuit block 1 is configured by housing a light emitting unit 3, a light receiving unit 4, a wavelength filter 5, a wiring board 11 on which a signal processing circuit unit 6 is mounted in a body 10 made of a synthetic resin molding. The light emitting unit 3 includes a semiconductor bare chip that emits infrared light (for example, a light source in which a resistance element using a MEMS technology is formed on a light emitting diode chip or a semiconductor substrate). However, the wavelength of infrared rays radiated from the light emitting unit 3 is a wavelength that is easily absorbed by a gas to be detected (for example, carbon monoxide, carbon dioxide, methane, nitrogen oxide, etc.). The light receiving unit 4 includes a semiconductor bare chip (for example, a photodiode chip or a pyroelectric element) that receives infrared rays and converts the infrared rays into an electrical signal. The wavelength filter 5 is composed of a bandpass filter that includes a predetermined wavelength band, for example, a wavelength band that is absorbed by the gas to be detected in the infrared wavelength emitted from the light emitting unit 3 in the passband. This type of band-pass filter is also called an interference filter and mainly has a multilayer structure of dielectric films. The signal processing circuit unit 6 drives the light emitting unit 3 to irradiate infrared rays, or amplifies and shapes the waveform of the signal output from the light receiving unit 4, sampling, A / D conversion, arithmetic processing, correction processing, abnormality It consists of an integrated circuit (IC) that performs signal processing such as density determination processing.
As shown in FIG. 3, the wiring board 11 has a rectangular main part 11A and an extension part 11B which is smaller than the main part 11A and protrudes to the left from the left rear end of the main part 11A. Is formed. The signal processing circuit unit 6 is mounted substantially at the center of the main part 11A, and printed wiring (not shown) is formed on the upper surface of the main part 11A and the upper surface of the extension part 11B.
The body 10 is formed in a flat rectangular parallelepiped shape and is provided with a recess 100 that opens to the upper surface side, and the wiring board 11 is accommodated in the recess 100. Moreover, the recessed part 101 is formed in the left end part in the upper surface side of the body 10, and the light emission part 3 is mounted in the bottom face (lower surface) of this recessed part 101 (refer FIG. 1). That is, in this embodiment, the body 10 corresponds to a holding body. In addition, the light emission part 3 is electrically connected with the printed wiring of the extension part 11B by appropriate methods, such as wire bonding. Here, the right end of the recess 101 is provided with a wall 102 that is substantially the same height as the upper surface of the body 10. In other words, the wall 102 is provided between the light emitting unit 3 and the signal processing circuit unit 4, and the infrared rays emitted from the light emitted from the light emitting unit 3 are shielded by the walls 102, thereby causing a signal caused by the irradiation of the infrared rays. The malfunction of the processing circuit unit 6 can be suppressed. In addition, since the wall 102 is formed integrally with the body 10, there is an advantage that the cost and size can be reduced as compared with the case where the wall is formed separately from the body 10.
On the other hand, at the right end portion on the upper surface side of the body 10, the upper concave portion 103 whose vertical depth is substantially equal to the thickness of the wavelength filter 5 (height in the vertical direction) and the center of the upper concave portion 103 in the front-rear direction are located. A lower recess 104 is formed. And the light-receiving part 4 is mounted in the bottom face (lower surface) of the lower side recessed part 104, and the wavelength filter 5 is arrange | positioned in the center of the upper side recessed part 103 so that the upper part of the light-receiving part 4 may be covered (refer FIG. 1). Therefore, the infrared rays traveling toward the light receiving unit 4 pass through the wavelength filter 5 and are received by the light receiving unit 4. The light receiving portion 4 is electrically connected to the printed wiring of the main portion 11A by an appropriate method such as wire bonding. Here, since the wavelength filter 5 is held in the body 10 together with the light receiving unit 4 in the present embodiment, there is an advantage that the cost can be reduced and the size can be reduced because it is not necessary to store the wavelength filter 5 in the package.
As shown in FIGS. 2 and 3, a plurality of (four in the illustrated example) terminals 12 protrude side by side in the left-right direction on both front and rear side surfaces of the body 10. These terminals 12 are made of a metal plate and are insert-molded in the body 10. In addition, prismatic base portions 105 are formed in the front and rear in the recess 100 (rear only shown), and the ends of the four terminals 12 protruding from the front side surface are exposed on the upper surface of the front base portion 105. In addition, the end portions 12A of the four terminals 12 protruding from the rear side surface are exposed on the upper surface of the rear base portion 105. Then, the end 12A of each terminal 12 exposed on the upper surface of the base 105 is electrically connected to the printed wiring of the wiring board 11 by an appropriate method such as wire bonding.
The optical block 2 is configured by housing a light guide 8 inside a cover 20 made of a synthetic resin molding. (See FIG. 1) The cover 20 is formed in a rectangular parallelepiped shape in which the length dimensions of the front, rear, left and right are equal to the body 10, and is provided with a recess 200 that opens to the lower surface side. The light guide 8 is placed in the recess 200. It is joined to the upper surface side of the body 10 in the housed state. In addition, a rectangular vent hole 201 penetrating the cover 20 in the vertical direction is provided in the center of the upper portion of the cover 20, and outside air (a plurality of types of mixed gas including a gas to be detected; the same applies hereinafter) through the vent hole 201. Is introduced into the recess 200 (light guide 8). The shape of the vent hole 201 is not limited to a rectangle, and may be other shapes such as a circle, and may be plural. However, the opening of the vent hole 201 on the upper surface of the cover 20 is covered with the dustproof filter 7 in order to prevent foreign matters other than outside air such as dust from entering the vent hole 201 (see FIG. 1).
As shown in FIG. 1, the light guide 8 includes a first reflecting mirror (first optical path changing unit) 80, a second reflecting mirror (second optical path changing unit) 81, a third reflecting mirror 82, and a fourth reflecting mirror. And a mirror 83. The first reflecting mirror 80 has, for example, a parabolic reflecting surface, and the optical path (optical axis) of infrared rays emitted from the light emitting unit 3 (see the broken line in FIG. 1) is the upper surface (holding surface) of the body 10. It is reflected (changed) in a direction (horizontal direction) along. The second reflecting mirror 81 has, for example, a flat reflecting surface, and a direction (vertical direction) in which the optical path (optical axis) changed by the first reflecting mirror 80 intersects the light receiving surface (upper surface) of the light receiving unit 4. To reflect (change). The third reflecting mirror 82 is formed in a semi-cylindrical shape in which the first reflecting mirror 80 and the second reflecting mirror 81 are arranged at both ends. However, a hole (not shown) connected to the vent hole 201 of the cover 20 is opened at the center of the third reflecting mirror 82. These three reflecting mirrors 80 to 82 may be formed of a metal material and insert-molded on the cover 20, or may be formed by depositing or plating a metal such as aluminum on the inner surface of the recess 200. May be. In particular, when the reflecting mirrors 80 to 82 are formed by vapor deposition or plating, the cost can be reduced and the dimensional accuracy can be improved as compared with the case where the reflecting mirrors 80 to 82 are formed of a metal material.
As shown in FIG. 2, the fourth reflecting mirror 83 is formed in a flat plate shape by using a metal material such as aluminum, or formed in a flat plate shape by depositing or plating a metal such as aluminum on the molded product. Is done. Steps 106 substantially equal to the thickness (vertical thickness) of the fourth reflecting mirror 83 are formed at the opening edges on the front and rear sides of the recess 100 of the body 10, and the fourth reflection is performed with the reflecting surface facing upward. Ends on both the front and rear sides of the mirror 83 are placed on the step 106. That is, as shown in FIG. 1, the opening of the recess 100 is closed by the fourth reflecting mirror 83 in the range from the wall 102 of the body 10 to the upper recess 103. That is, the fourth reflecting mirror 83 is disposed between the signal processing unit 6 and the optical path. At this time, if the reflecting surface (upper surface) of the fourth reflecting mirror 83 is lower than the light emitting surface (upper surface) of the light emitting unit 3, the depth of the recess 100 in which the signal processing circuit unit 6, the wiring board 11 and the like are accommodated is increased. This has to increase the thickness (height) of the body 10. On the other hand, if the reflecting surface of the fourth reflecting mirror 83 is higher than the light emitting surface of the light emitting unit 3, infrared rays are reflected at the end of the fourth reflecting mirror 83 and the loss increases. It becomes necessary to increase the size, which makes it difficult to reduce the size. On the other hand, in the present embodiment, the fourth reflecting mirror 83 is placed on the step 106 that is substantially equal to the thickness dimension thereof, so that the reflecting surface of the fourth reflecting mirror 83 becomes the light emitting surface (upper surface) of the light emitting unit 3. Since they are flush with each other, inconveniences as described above can be avoided.
In the gas sensor configured as described above, the outside air is introduced into the light guide 8 through the vent hole 201, and the infrared light emitted from the light emitting unit 3 is absorbed by the detection target gas contained in the outside air, thereby receiving the light receiving unit. 4, the amount of received infrared light decreases. Therefore, the signal processing circuit unit 6 processes the output signal of the light receiving unit 4 according to the amount of received infrared light, thereby detecting the concentration of the gas (gas component) to be detected contained in the outside air in the light guide 8. it can. However, the specific contents of the signal processing performed in the signal processing circuit unit 6 for detecting the gas concentration are well known in the art and will not be described in detail.
Thus, in the present embodiment, the light emitting unit 3 and the light receiving unit 4 are each formed of a semiconductor bare chip (light emitting diode chip and photodiode chip), and the infrared light path from the light emitting unit 3 to the light receiving unit 4 is linear. Instead, it has been changed to a polygonal line. Therefore, this embodiment has an advantage that the wiring can be simplified as compared with the conventional examples (see Patent Documents 1 and 2) in which package type light emitting diodes and photodiodes are used. Further, in the present embodiment, since the optical path of infrared rays (see the broken line in FIG. 1) is changed to a substantially U shape by the first reflecting mirror 80 and the second reflecting mirror 81, it is described in Patent Document 2 in which the optical path is substantially V-shaped. Compared with the conventional example, the height dimension in the vertical direction can be reduced (lower profile) without shortening the optical path length. In addition, since the distance from the vent hole 201 to the optical path is shortened as compared with the conventional example described in Patent Document 2 due to the low profile, the detection responsiveness to the change in the ratio of the detection target gas in the outside air can be improved. There are also advantages.
In the present embodiment, the signal processing circuit unit 6 is located at a position that is sandwiched between the light emitting unit 3 and the light receiving unit 4 and does not overlap with the optical path changed by the first reflecting mirror 80, that is, inside the body 10 (inside the recess 100). Thus, the body 10 and the cover 20 are reduced in size by effectively using the dead space.
By the way, substantially cylindrical projections 202 project downward from the lower surface of the cover 20 near the center in the left-right direction and at both ends in the front-rear direction (see FIG. 4). Further, circular fitting holes 107 for fitting with the protrusions 202 of the cover 20 are provided in the vicinity of the center in the left-right direction and both ends in the front-rear direction on the upper surface of the body 10 (see FIGS. 2 and 3). In other words, the protrusion 202 and the fitting hole 107 are fitted to each other to enable positioning when the body 10 and the cover 20 are joined, and the light emitting unit 3 and the first reflecting mirror 80 are aligned, and the light receiving unit 4 and the second reflecting member. Positioning with the mirror 81 is facilitated. In particular, in the present embodiment, the reflecting surface of the first reflecting mirror 80 is formed in a parabolic shape, and the light emitting unit is positioned at the focal point of the reflecting surface (parabolic surface) by positioning the body 10 and the cover 20. 3 can be easily arranged.
Here, when the present embodiment is assembled by the automatic assembly machine, the light emitting unit 3 and the light receiving unit 4 are used by using a well-known image processing technique (for example, edge detection) from the image of the body 10 captured by the camera from above. Positioning of the mounting position is performed. In this embodiment, as shown in FIG. 4, a hole 108 having a smaller diameter than the fitting hole 107 is provided on the bottom surface of the fitting hole 107 in the body 10, and the fitting hole 107 is formed by an opening edge (edge) of the hole 108. The positions of the light emitting unit 3 and the light receiving unit 4 are positioned with reference to the position of the fitting hole 107. When the position of the fitting hole 107 is detected by the opening edge of the fitting hole 107 using a known image processing technique, the position in the depth direction of the surface of the light emitting unit 3 or the light receiving unit 4 and the depth of the fitting hole 107 are detected. Since the position in the vertical direction is different, a position detection error occurs due to the difference in the image formation (focus) position in the captured image. In order to reduce this position detection error, a small-diameter hole 108 is provided, and the position of the opening edge in the depth direction is the same as or substantially the same as the position in the depth direction of the surface of the light emitting unit 3 or the light receiving unit 4. That is, in the present embodiment, the positioning of the circuit block 1 and the optical block 2 and the positioning of the mounting positions of the light emitting unit 3 and the light receiving unit 4 with respect to the body 10 are performed using the same fitting hole 107 as a reference. As a result, the accuracy of alignment of the light emitting unit 3 and the light receiving unit 4 with the light guide 8 (the first reflecting mirror 80 and the second reflecting mirror 81) is compared with the case where the positions of both are different from each other. Has the advantage of improving. One such projection 202 and one fitting hole 107 may be provided.
By the way, since the light emitting unit 3 is not small enough to be regarded as a point light source with respect to the size of the first reflecting mirror 80, only a part of infrared rays radiated from the light emitting unit 3 is reflected on the reflecting surface (parabolic) of the first reflecting mirror 80. Will not pass through the focal point). Therefore, as shown in FIG. 5, a condensing lens 21 is disposed on the optical path between the light emitting unit 3 and the first reflecting mirror 80 so that the condensing point of the lens 21 and the focus of the first reflecting mirror 80 coincide. It is preferable. In this way, most of the infrared light emitted from the light emitting unit 3 passes through the focal point of the first reflecting mirror 80, so that the infrared light can be efficiently received by the light receiving unit 4.
Although the wavelength filter 5 is attached to the body 10 in this embodiment, the wavelength filter 5 may be attached to the light receiving unit 4 (semiconductor bare chip) as shown in FIG. For example, the rectangular flat wavelength filter 5 is bonded to the upper surface of the light receiving unit 4 so as to cover the light receiving surface 40 of the light receiving unit 4. However, a frame portion 50 is provided on the periphery of the lower surface of the wavelength filter 5, and a gap is formed between the light receiving surface 40 of the light receiving portion 4 and the lower surface of the wavelength filter 5 by the frame portion 50. Note that the wavelength filter 5 having a flat bottom surface may be bonded with a bonding material 51 such as a low melting glass, a low melting metal, or a polymer (see FIG. 6C). If the wavelength filter 5 is configured integrally with the light receiving unit 4 in this way, the upper concave portion 103 for attaching the wavelength filter 5 becomes unnecessary, and the gap between the wavelength filter 5 and the light receiving surface is reduced. There is an advantage that the thickness of the body 10 can be reduced to reduce the size (lower profile). Further, a large number of light receiving units 4 and wavelength filters 5 can be manufactured at once using a manufacturing process of a semiconductor wafer, and manufacturing costs can be reduced. Alternatively, the wavelength filter 5 may be provided between the first reflecting mirror 80 and the second reflecting mirror 81.
Here, the first reflecting mirror 80 is not limited to a reflecting surface having a parabolic shape, and may have a reflecting surface having a spherical shape or a polygonal shape, for example. Similarly, the second reflecting mirror 81 is not limited to a flat reflecting surface, and may have a curved reflecting surface.
(Embodiment 2)
The gas sensor of this embodiment is shown in FIG. The present embodiment is characterized in that two sets of the light receiving unit 4 and the wavelength filter 5 are provided, and other configurations are the same as those in the first embodiment. Therefore, the same components as those in the first embodiment are denoted by the same reference numerals, and illustration and description thereof are omitted as appropriate.
As shown in FIG. 7, at the right end portion on the upper surface side of the body 10, two lower concave portions 104A and 104B are formed side by side in the front-rear direction. The first light receiving unit 4A and the second light receiving unit 4B are mounted on the bottom surfaces of the lower recesses 104A and 104B, respectively, and the first wavelength filter 5A and the second wavelength filter 5A are covered so as to cover the top of the light receiving units 4A and 4B. The wavelength filter 4B is disposed on the bottom surface of the upper recess 103.
Here, the first wavelength filter 5A includes the infrared wavelength range absorbed by the detection target gas in the pass band, but the second wavelength filter 5B uses the infrared wavelength range absorbed by the detection target gas as the pass band. For example, the passband includes a wavelength range near the wavelength range. That is, among the infrared rays radiated from the light emitting unit 3, the amount of infrared rays passing through the first wavelength filter 5A and received by the first light receiving unit 4A decreases according to the concentration of the gas to be detected. The amount of infrared light that passes through the two-wavelength filter 5B and is received by the second light receiving unit 4B does not decrease according to the concentration of the gas to be detected. Then, the signal processing circuit unit 6 calculates the difference between the output signal levels of the first light receiving unit 4A and the second light receiving unit 4B, and calculates the concentration of the detection target gas based on this difference.
That is, when the signal processing circuit unit 6 calculates the gas concentration based on the output signal level of the light receiving unit 4 as in the first embodiment, the gas concentration is changed when the output signal level of the light receiving unit 4 fluctuates due to some disturbance factor. There is a possibility that the detection accuracy is lowered. On the other hand, if the signal processing circuit unit 6 calculates the concentration of the gas to be detected based on the difference between the output signal levels of the first light receiving unit 4A and the second light receiving unit 4B as described above, the output of each light receiving unit 4 It is possible to cancel the decrease in gas concentration detection accuracy by offsetting the signal level fluctuation.
In the first and second embodiments, the gas sensor that detects the concentration of one kind of gas contained in the outside air is illustrated, but a plurality of sets of the light emitting unit 3, the light receiving unit 4, the wavelength filter 5, and the light guide 8 are provided. Then, the gas sensor which detects the density | concentration of a different kind of gas for each group is realizable. Even in such a case, the first light receiving unit 4A, the second light receiving unit 4B, the first wavelength filter 5A, and the second wavelength filter 4B are provided for each set, and the first light receiving unit 4A and the second light receiving unit 4B are provided. The concentration of each gas may be detected from the difference between the output signal levels. The first set may include the first light receiving unit 4A, the second light receiving unit 4B, the first wavelength filter 5A, and the second wavelength filter 4B, and the second set may include the light receiving unit 4 and the wavelength filter 5. In this case, the first set detects the concentration of each gas from the difference between the output signal levels of the first light receiving part 4A and the second light receiving part 4B, and the second set is the light receiving part 4 and the second light receiving part of the first set. It is also possible to detect the concentration of each gas from the difference in the output signal level of 4B.
By the way, if the body 10 is a three-dimensional wiring board (so-called MID board) capable of integrally forming the wiring to the light emitting part and the light receiving part as shown in FIG. 8, the signal processing circuit part 6 does not go through the wiring board 11 but the body. Therefore, the body 10 can be further miniaturized.
All the above-mentioned embodiments, the explanation examples and the modification examples in the embodiments can be combined with each other. The preferred embodiments of the present invention have been described above, but the present invention is not limited to these specific embodiments, and various modifications and variations that do not depart from the scope of the claims are possible. It belongs to the category of the present invention.

Claims (14)

  1.  赤外線を放射する半導体チップからなる1乃至複数の発光部と、
     赤外線を受光して電気信号に変換する半導体チップからなる1乃至複数の受光部と、
     前記発光部及び前記受光部を保持する保持体と、
     前記発光部から放射される赤外線の光路を前記保持体の保持面に沿った方向へ変更する第1光路変更部と、
     当該第1光路変更部で変更された前記光路を前記受光部の受光面と交差する方向へ変更する第2光路変更部とを備えることを特徴とする気体成分検出装置。
    One to a plurality of light emitting units made of semiconductor chips that emit infrared rays;
    One or a plurality of light receiving parts made of semiconductor chips that receive infrared rays and convert them into electrical signals;
    A holding body for holding the light emitting unit and the light receiving unit;
    A first optical path changing unit that changes an optical path of infrared rays emitted from the light emitting unit in a direction along a holding surface of the holding body;
    A gas component detection device comprising: a second optical path changing unit that changes the optical path changed by the first optical path changing unit in a direction intersecting with a light receiving surface of the light receiving unit.
  2.  所定の波長帯域を通過域に含む1乃至複数の波長フィルタをさらに備え、
     前記受光部は前記波長フィルタを通過する赤外線を受光することを特徴とする請求項1記載の気体成分検出装置。
    Further comprising one or more wavelength filters including a predetermined wavelength band in the passband;
    The gas component detection device according to claim 1, wherein the light receiving unit receives infrared rays that pass through the wavelength filter.
  3.  前記波長フィルタは前記受光部とともに前記保持体に保持されることを特徴とする請求項2記載の気体成分検出装置。 The gas component detection device according to claim 2, wherein the wavelength filter is held by the holding body together with the light receiving unit.
  4.  前記波長フィルタは前記第1光路変更部と前記第2光路変更部の間の前記光路上に配置されることを特徴とする請求項2記載の気体成分検出装置。 The gas component detection device according to claim 2, wherein the wavelength filter is disposed on the optical path between the first optical path changing unit and the second optical path changing unit.
  5.  前記波長フィルタは前記受光部に取り付けられることを特徴とする請求項2記載の気体成分検出装置。 The gas component detection device according to claim 2, wherein the wavelength filter is attached to the light receiving unit.
  6.  前記波長フィルタ中少なくとも1つの波長フィルタは、検出対象である気体に吸収される波長帯域を通過域に含む第1波長フィルタと、当該第1波長フィルタの前記通過域を含まず且つ当該通過域近傍の波長帯域を通過域に含む第2波長フィルタとを含み、
     前記受光部中少なくとも1つの受光部は、前記第1波長フィルタを通過する赤外線を受光する第1受光部と、前記第2波長フィルタを通過する赤外線を受光する第2受光部とを含むことを特徴とする請求項2~5の何れか1項に記載の気体成分検出装置。
    At least one of the wavelength filters includes a first wavelength filter that includes a wavelength band that is absorbed by a gas that is a detection target in a pass band, and does not include the pass band of the first wavelength filter and is in the vicinity of the pass band. A second wavelength filter including the wavelength band of
    At least one light receiving unit in the light receiving unit includes a first light receiving unit that receives infrared light that passes through the first wavelength filter, and a second light receiving unit that receives infrared light that passes through the second wavelength filter. 6. The gas component detection device according to claim 2, wherein the gas component detection device is a gas component detection device.
  7.  前記受光部から出力される電気信号を信号処理する信号処理回路部を備え、
     当該信号処理回路部は、前記発光部と前記受光部に挟まれ且つ前記第1光路変更部で変更される光路と重ならない位置に配置されることを特徴とする請求項1~6の何れか1項に記載の気体成分検出装置。
    A signal processing circuit unit for processing an electrical signal output from the light receiving unit;
    7. The signal processing circuit unit according to claim 1, wherein the signal processing circuit unit is disposed at a position sandwiched between the light emitting unit and the light receiving unit and not overlapping an optical path changed by the first optical path changing unit. The gas component detection device according to Item 1.
  8.  前記信号処理回路部と前記光路との間に反射鏡が配置されることを特徴とする請求項7記載の気体成分検出装置。 The gas component detection device according to claim 7, wherein a reflecting mirror is disposed between the signal processing circuit unit and the optical path.
  9.  前記反射鏡は、一面を反射面とする平板状に形成され、
     当該反射面が前記発光部の発光面と面一となるように前記保持体に保持されることを特徴とする請求項8記載の気体成分検出装置。
    The reflecting mirror is formed in a flat plate shape having one surface as a reflecting surface,
    The gas component detection device according to claim 8, wherein the reflecting surface is held by the holding body so as to be flush with the light emitting surface of the light emitting unit.
  10.  前記発光部と前記信号処理回路部との間に、前記発光部から放射される赤外線を遮蔽する壁が設けられることを特徴とする請求項7~9の何れか1項に記載の気体成分検出装置。 The gas component detection according to any one of claims 7 to 9, wherein a wall that shields infrared rays emitted from the light emitting unit is provided between the light emitting unit and the signal processing circuit unit. apparatus.
  11.  前記壁は前記保持体と一体に形成されることを特徴とする請求項10記載の気体成分検出装置。 The gas component detection device according to claim 10, wherein the wall is formed integrally with the holding body.
  12.  前記発光部と前記第1光路変更部の間の光路上に集光用のレンズが配置されることを特徴とする請求項1~11の何れか1項に記載の気体成分検出装置。 The gas component detection device according to any one of claims 1 to 11, wherein a condensing lens is disposed on an optical path between the light emitting unit and the first optical path changing unit.
  13.  前記保持体は、前記発光部及び前記受光部への配線が一体に形成される立体配線基板であることを特徴とする請求項1~12の何れか1項に記載の気体成分検出装置。 The gas component detection device according to any one of claims 1 to 12, wherein the holding body is a three-dimensional wiring board in which wirings to the light emitting unit and the light receiving unit are integrally formed.
  14.  前記第1光路変更部及び前記第2光路変更部を保持して前記保持体と結合されるカバーを備え、
     当該カバーの前記保持体との結合面に1乃至複数の突起が設けられ、
     当該突起と嵌合する嵌合孔が前記保持体の前記結合面に設けられ、
     当該嵌合孔よりも小径の孔が当該嵌合孔の底面に設けられることを特徴とする請求項1~13の何れか1項に記載の気体成分検出装置。
    A cover that holds the first optical path changing unit and the second optical path changing unit and is coupled to the holding body;
    One or more protrusions are provided on the surface of the cover that is coupled to the holding body,
    A fitting hole for fitting with the protrusion is provided in the coupling surface of the holding body,
    14. The gas component detection device according to claim 1, wherein a hole having a smaller diameter than the fitting hole is provided on a bottom surface of the fitting hole.
PCT/IB2012/000685 2011-04-11 2012-04-05 Gas component detection device WO2012140482A1 (en)

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