TW201241016A - Resist underlayer film forming composition and method for forming resist pattern by use of the composition - Google Patents

Resist underlayer film forming composition and method for forming resist pattern by use of the composition Download PDF

Info

Publication number
TW201241016A
TW201241016A TW100146840A TW100146840A TW201241016A TW 201241016 A TW201241016 A TW 201241016A TW 100146840 A TW100146840 A TW 100146840A TW 100146840 A TW100146840 A TW 100146840A TW 201241016 A TW201241016 A TW 201241016A
Authority
TW
Taiwan
Prior art keywords
photoresist
film
forming
composition
underlayer film
Prior art date
Application number
TW100146840A
Other languages
English (en)
Chinese (zh)
Inventor
Rikimaru Sakamoto
Takafumi Endo
Ryuji Ohnishi
Bang-Ching Ho
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW201241016A publication Critical patent/TW201241016A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
TW100146840A 2010-12-17 2011-12-16 Resist underlayer film forming composition and method for forming resist pattern by use of the composition TW201241016A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010281666 2010-12-17

Publications (1)

Publication Number Publication Date
TW201241016A true TW201241016A (en) 2012-10-16

Family

ID=46244716

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100146840A TW201241016A (en) 2010-12-17 2011-12-16 Resist underlayer film forming composition and method for forming resist pattern by use of the composition

Country Status (3)

Country Link
JP (1) JPWO2012081619A1 (ja)
TW (1) TW201241016A (ja)
WO (1) WO2012081619A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106133606A (zh) * 2014-03-26 2016-11-16 日产化学工业株式会社 添加剂以及包含该添加剂的抗蚀剂下层膜形成用组合物

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10289002B2 (en) 2013-12-19 2019-05-14 Nissan Chemical Industries, Ltd. Electron beam resist underlayer film-forming composition containing lactone-structure-containing polymer
CN106164774B (zh) * 2014-05-22 2019-12-13 日产化学工业株式会社 含有包含丙烯酰胺结构和丙烯酸酯结构的聚合物的光刻用抗蚀剂下层膜形成用组合物
JP2018119996A (ja) * 2015-05-28 2018-08-02 富士フイルム株式会社 基板処理方法、樹脂組成物及び電子デバイスの製造方法
KR102557875B1 (ko) * 2017-02-03 2023-07-20 닛산 가가쿠 가부시키가이샤 우레아결합을 갖는 구조단위를 갖는 폴리머를 포함하는 레지스트 하층막 형성 조성물
JP2020132749A (ja) * 2019-02-19 2020-08-31 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ポリマー、ポリマーを含んでなる半導体組成物、および半導体組成物を用いた膜の製造方法
KR20220075265A (ko) 2019-10-02 2022-06-08 마루젠 세끼유가가꾸 가부시키가이샤 레지스트용 가교형 중합체

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7326523B2 (en) * 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
JP4645360B2 (ja) * 2005-08-19 2011-03-09 Ｊｓｒ株式会社 バンプ形成用樹脂組成物、バンプ形成用二層積層膜、およびバンプ形成方法
WO2008047715A1 (fr) * 2006-10-12 2008-04-24 Nissan Chemical Industries, Ltd. procédé de fabrication d'un dispositif semi-conducteur à l'aide d'un stratifié à quatre couches

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106133606A (zh) * 2014-03-26 2016-11-16 日产化学工业株式会社 添加剂以及包含该添加剂的抗蚀剂下层膜形成用组合物
CN106133606B (zh) * 2014-03-26 2019-06-28 日产化学工业株式会社 添加剂以及包含该添加剂的抗蚀剂下层膜形成用组合物

Also Published As

Publication number Publication date
WO2012081619A1 (ja) 2012-06-21
JPWO2012081619A1 (ja) 2014-05-22

Similar Documents

Publication Publication Date Title
KR102156732B1 (ko) 레지스트 하층막 형성 조성물 및 이것을 이용한 레지스트 패턴의 형성방법
JP6394926B2 (ja) 添加剤及び該添加剤を含むレジスト下層膜形成組成物
KR101804392B1 (ko) 레지스트 하층막 형성 조성물 및 이를 이용한 레지스트 패턴의 형성 방법
KR102361878B1 (ko) 레지스트 하층막 형성 조성물용 첨가제 및 이 첨가제를 포함하는 레지스트 하층막 형성 조성물
JP5708938B2 (ja) 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法
TWI750225B (zh) 光阻下層膜形成組成物
JP5382321B2 (ja) レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
TW201241016A (en) Resist underlayer film forming composition and method for forming resist pattern by use of the composition
TWI602026B (zh) 抗蝕下層膜形成組成物
JP5737526B2 (ja) レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
KR102008161B1 (ko) 레지스트 하층막 형성 조성물 및 이를 이용한 레지스트 패턴의 형성방법
JP2010285403A (ja) 架橋剤及び該架橋剤を含有するレジスト下層膜形成組成物
JP2015145944A (ja) レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
TWI540165B (zh) 嵌段共聚物與光阻下層膜形成組成物