201234663 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種將半導體作為構成材料而發光之發 光元件之構造’尤其是關於線狀發光元件之構造。 【先前技術】 半導體之發光一極體（LED)係使用在各種目的。例如， 使用此之照明機器，與習知白熱燈炮或螢光燈相較耗電低 且散熱性低，因此期待將來將此等置換。此處，在LED之 P型半導體層或η型半導體層’一般而言，係藉由磊晶成長 或離子注入等形成。因此，ρη接合面與半導體晶圓之表面 平行地形成，連接於ρ側之電極與連接於η側之電極分配 在此半導體層之上面與下面。藉由使ρη接合之順向電流流 過此等電極間能使此發光元件發光。此時，一般而言，電 極係以遮蔽此光之金屬構成，因此不易從形成有電極之部 位取出光。又，若此電流在發光元件内不均勻，則無法獲 得均勻之發光。 解決上述問題之發光元件之具體構成，例如記載於專 利文獻1。圖10係顯示其剖面圖。在此發光元件90發光之 半導體發光機能層91為在下側具有ρ型半導體層92、在上 側具有η型半導體層93之雙層構造。在半導體發光機能層 91之下面（ρ型半導體層92之下面）整體形成有以金屬構成 之ρ侧電極94’在半導體發光機能層91之上面（η型半導體 層93之上面）之一部分形成有以金屬構成之η側電極95。 再者’在上面整體覆蓋η側電極95形成有透明電極96。作 201234663 為透明電極96 $ M ‘ 〈材科’有例如 ITO(Indium-Tin-Oxide)或 (Zinc-〇xlde)等’此等為導電性同時對此發光元件發 出之光為透明。 在此構造’用以使此發光元件90動作（發光）之電壓係 於P側電極94與n側電極95間。此時，p側電極94 係形成於下面整面，n側電極％係與形成在上面整面之透 月電極96連接。由於p型半導體層92之下面整面被p側 電極94覆蓋，因此電位相同…因透明電極％之存在， 在半導體層93之上面整體之電位亦成為大致相同，因 此2半導體發光機能層91中之電流，遍布其上下方向（pn 接〇方向）大致相同地流過。因此，在面内可獲得均勻之發 光。 此時’在圖1G之上側發出之光，在半導體發光機能層 91之左端部被n側電極95遮蔽，但在大部分區域未被遮蔽 而透射過透明電極96。因此’如圖1() t之虛線箭頭所示， 能取出均勻之發光。 如此，藉由將透明電極作為連接於一方之極之電極使 用，能使半導體發光機能層91兩側之表面之電位相同，能 獲得均勻發光之發光元件。 然而，在使用例如GaN系之半導體之情形，一般而言， 使用在絕緣性之基板上使n型半導體層磊晶成長、在其上 使P型半導體層磊晶成長之構造。在此構造，只要不除去 基板，則不易貫現圖10之構成。因此，使用圖丨丨之俯視 圖（a)、其Q-Q方向之剖面圖（b)所示之構造。此處，顯示在 4 201234663 左右為細長形狀之發光元件。 在此構造，在絕緣性之基板丨80上形成有半導體發光 機能層190。半導體發光機能層19〇係以n型半導體層191 與其上之發光層192、ρ型半導體層193構成。在右端部ρ 型半導體層193、發光層192被局部除去。在此構造之中央 部之大半，透明電極194形成在ρ型半導體層193上。再 者，在其上整面形成絕緣層195。在絕緣層195，在左側形 成有到達ρ型半導體層193之開口，在右側形成有到達η 型半導體層191之開口。在覆蓋此等開口之狀態下，在左 側形成ρ側電極196，在右側形成η側電極丨97。此外，在 俯視圖（圖11(a))省略絕緣層195之記載。 在此構造，能使電流流過ρ型半導體層193與n型半 導體層191之間之發光層192，在圖u(a)中以w表示之區 域整體，能通過透明電極194取出發光。然而，一般而言， 與η型半導體層191、ρ側電極196、η側電極197相較， 透明電極194或ρ型半導體層193之電阻率較低。又，不 易使ρ型半導體層193變厚。因此，在從㈣電極196至η 侧電極197之電流路徑，無法忽視透明電極i94、ρ型半導 ，層193之電阻、或此導致之電壓下降。此情形，不易使 流至發光層192之電流在圖U中之左右方向均勻，產生在 此方向之發光不均句°實驗上’發光成為最強為接近η側 電極1 9 7之右側部位。 為了消除上述不均勻性，使ρ側電極丨96細長地往右 向k伸之構這之俯視圖為圖12(a)，其R_R方向之剖面圖 201234663 為圖12(b)。在此構造，使p側電極196細長地往右方向延 伸，在複數個部位在與透明電極194之間取得接觸，藉此 使P側電⑮196肖p型半導體層193之間之電阻降低，：p 型半導體層193之電位均句化。又，p側電極196對發光為 不透明，但在發光區域上使其寬度在圖12中之上下方向變 窄’藉此可降低被其遮蔽之光量。 又，使上述發光元件成為-維或二維陣列狀使用之情 形，不僅以上述方式使發光元件内之發光之均勻性提高， 亦必須不會產生與相鄰發光元件間之$擾。為了此目：， 在專利文獻2記載有透過絕緣層以上述p側電極或n側電 極覆蓋側面以遮光之技術。 專利文獻1 :曰本特開昭6 1 - 8 5 8 7 8號公報 專利文獻2 :日本特開平U_74565號公報 【發明内容】 然而’由於無法忽視在 ^ ita. ^ 響’因此即使使用圖12之構成之情形，亦不易消除長廷 向之發光之不均勻生。尤其是，在具有例如發光區域之 橫比成為i: 1〇〇之大深寬比之情形上述不均句性變㈣ 在專利讀2記載之技術，雖能抑制從側面發出之光， 無法改善在上方發出之光之不均勻性。 亦即，在於半導體發光機能層之一方之面形成有2個 電極之構成之發光元件，在長邊方向不易獲得均勻之發光 強度。上述問題尤其是在2個電極之間隔寬廣之情形顯著。 本發明係有鑑於上述問題點而構成，其目的在於提供 6 201234663 一種解決上述問題點之發明。 本發明，為了解決上述問題，構成如下。 本發明之發光元件，係使用在具有帛丨導電型之第工 半導體層上形成有具有與該第】導電型相反之導電型即第2 導電型之第2 +導體層之㈣體發光機能層，用於使該半 導體發光機能層發光之通電之二個電極皆形成在該半導體 發光機能層之形成有該帛2半導體層側之主面上，其特徵 在於’具備：帛1電極’在該半導體發光機能層之一方之 端部於該帛2半導體層從該主面側被除去之部位，以與該 第1半導體層連接之方式形成；透明電極，在該第2半導 體層之表面另-方之端部之側朝向該—方之端部之側 延伸形成；以及第2電極，在該另一方之端部之側，以與 該透明電極連接之方式形成在該透明電極上；至少在動作 上在該半導體發光機能層上之發光強度最高之區域上，隔 著絕緣層被該第1電極或該第2電極覆蓋β 本發明之發光元件中，在該半導體發光機能層上之發 光強度最高之區域’係包含該透明電極之該一方之端部側 之一端之區域。 . 本發明之發光元件中，該半導體發光機能層之端部被 錐狀加工，該第1電極、該第2電極中之至少—方隔著該 絕緣層覆蓋錐狀加工後之該半導體發光機能層之端部。 本發明之發光元件中’該絕緣層覆蓋該透明電極及該 半導體發光機能層形成；該第1電極、該第2電極係通過 形成在該絕緣層中之開口分別連接於該第i半導體層、該 201234663 透明電極。 本發明之發光元件中，該第2電極之一部分從該另一 方之端部之側朝向該一方之端部之側延伸形成，在該延伸 形成後之部分與該透明電極連接。 本發明之發光元件十，該第1電極在與該第2電極不 接觸之狀態下’形成為較該第2電極之一部分朝向該一方 之端部延伸部分之前端部更朝向該另一方之端部之側延伸 之形狀。 本發明之發光元件中，在該半導體發光機能層之一方 之端部該第2半導體層從該主面側被除去之部位，係以該 第1半導體層在底部露出之方式形成在該半導體發光機能 層之開口部；該第1電極在該底部與該第1半導體層連接。 本發明之發光元件中，該第1半導體層係藉由磊晶成 長形成在矽基板上。 本發明之發光元件中，該第1半導體層係以η型氮化 物半導體構成，該第2半導體層係以ρ型氮化物半導體構 成。 本發明係以上述方式構成，因此在於半導體發光機能 層之一方之面形成有2個電極之構成之發光元件，在長邊 方向能獲得均勻之發光強度。 【實施方式】 以下，針對本發明實施形態之發光元件進行說明。此 發光元件，在半導體發光機能層之一方之主面側形成有Ρ 側電極（陽極）與η側電極（陰極）。又，半導體發光機能層尤 8 201234663 其是在從p側電極朝向η側電極之方向構成細長形態。 (第1實施形態） 圖1係第1貫施形態之發光元件丨〇之俯視圖（a)及其 A-A方向之剖面圖（b)。又，圖2(a)〜(e)分別係圖；!（a)中B_B 方向、C-C方向、D-D方向、E-E方向、F_F方向之剖面圖。 在此發光元件10發光之半導體發光機能層2〇係形成 在Si基板11上，具有由η型GaN層（第i半導體層）21、 MQW(Multi Quantum WeU)層 η、p 型 GaN 層（第 2 半導體 層）23構成之積層構造。此構成中主要之發光層為層 22。在圖1(b)中之一方之端部（右端部）側之區域，p型GaN 層23與^4(^^層22被局部除去。因此，有助於發光之半導 體發光機能層20之右側之端部成為圖i中以τ表示之位 置。如圖1(b)、圖2之剖面所示，在此構造，si基板i in 型GaN層21、MQW層22、ρ型⑽層&及由此等構成 之積層構造之端部為錐狀。又，雖省略圖示，但圖1之構 造整體形成在支承基板上。 ----- 王囟），以從为一方之 端部（左端部）側朝向右端部側延伸之形態，i p型⑽層 23之右端„ρ(Τ之位置）附近為止形成有透明電極31。再者， 以覆蓋此構造整體之形態形成有絕料…在左端部側之 區域面Β-Β之部位)、與右端部側ρ型層23與 層22被局部除去之區域（剖面F_F之部位）之二個部位，在 此絕緣層3 2形成有開口 頁開口又，在此等之間之透明電極31 上之七個部位(例如剖面D-D之部位)，更小之開口亦形成在 201234663 絕緣，32。此外，俯視圖（圖1(a))中省略絕緣層以記載。 在此左端部之區域連接有p側電極(陽極：… ? »又，在此七個部位之區域亦連接有p側電極Μ之局 =側延伸之區域。在P側電極33使用對發光非透明但 ，率小之金屬材料。如俯視圖（圖⑽所示，p侧電極33, =之區域，係形成為隔著絕緣層32覆蓋半導體發光機 …整體、亦包含其錐狀化之端部。另一方面，… ::之區域局部延伸之區域，在圖1(a)中之上下方向形成為 明電極31 .田，僅在開口之部分稍微變粗。在此延伸區 域之非開口上之部位（剖面c_c之部位）之剖面為圖2⑻，開 口上之部位(剖面D-D之部位)之剖面為圖2⑷。 另一方面，η側電極(第1電極：陰極)34在剖面F_F之 部位與η型咖層21連接，與透明電極Ip側電極Μ 與η側電極34不接觸。n側電極34，與在右側之區域之p 側電極33同樣地’係形成為覆蓋包含右側區域之半導體發 光機能層2〇之此積層構造整體、亦包含其雖狀化之端面。 又，11側電極34越過Ρ型GaN層23與MQW層22被 局部除去之區域之左彳目，丨A + 區域、亦即圖1(a)十半導體發光機能 層2〇之右端部（圓1⑷中T之位置），亦覆蓋較其左側之半 導體發光機能層20之上面。 * 基板11為矽之單晶基板，摻雜有雜質而成為 局導電性，未摻雜而成為高電阻率皆可。以在盆上良質之 半導體發光機能層20(11型㈣層2i、MQw層Μ型㈣ 層23)能異質蟲晶成長之方式，適當μ其面方位。 10 201234663 η型GaN層21、MQW層22、p型GaN層23能藉由 MBE(Molecular Beam Epitaxy)法、或 MOCVD(Metal Organic201234663 VI. [Technical Field] The present invention relates to a structure of a light-emitting element that emits light using a semiconductor as a constituent material, particularly regarding the configuration of a linear light-emitting element. [Prior Art] A light-emitting diode (LED) of a semiconductor is used for various purposes. For example, the lighting device using this is expected to be replaced with a conventional white heat lamp or a fluorescent lamp with low power consumption and low heat dissipation. Here, the P-type semiconductor layer or the n-type semiconductor layer ' of the LED is generally formed by epitaxial growth, ion implantation or the like. Therefore, the pn junction is formed in parallel with the surface of the semiconductor wafer, and the electrode connected to the p side and the electrode connected to the n side are disposed above and below the semiconductor layer. The light-emitting element can be made to emit light by flowing a forward current of ρη through the electrodes. In this case, in general, since the electrode is made of a metal that shields the light, it is difficult to extract light from the portion where the electrode is formed. Further, if the current is not uniform in the light-emitting element, uniform light emission cannot be obtained. The specific configuration of the light-emitting element that solves the above problems is described, for example, in Patent Document 1. Figure 10 is a cross-sectional view showing the same. The semiconductor light-emitting function layer 91 in which the light-emitting element 90 emits light has a two-layer structure having a p-type semiconductor layer 92 on the lower side and an n-type semiconductor layer 93 on the upper side. A p-side electrode 94' made of a metal is integrally formed on a portion of the semiconductor light-emitting function layer 91 (on the upper surface of the n-type semiconductor layer 93) under the semiconductor light-emitting function layer 91 (under the p-type semiconductor layer 92). The η side electrode 95 is made of a metal. Further, a transparent electrode 96 is formed on the entire surface of the n-side electrode 95. 201234663 is a transparent electrode 96 $ M ‘ <materials' such as ITO (Indium-Tin-Oxide) or (Zinc-〇xlde), etc. These are electrically conductive and transparent to the light emitted from the light-emitting element. Here, the voltage for operating (illuminating) the light-emitting element 90 is between the P-side electrode 94 and the n-side electrode 95. At this time, the p-side electrode 94 is formed on the entire lower surface, and the n-side electrode % is connected to the vapor-permeable electrode 96 formed on the entire surface. Since the entire lower surface of the p-type semiconductor layer 92 is covered by the p-side electrode 94, the potential is the same... the entire potential of the semiconductor layer 93 is substantially the same due to the presence of the transparent electrode %, and thus the semiconductor light-emitting function layer 91 is The current flows through substantially the same direction in the vertical direction (the pn junction direction). Therefore, uniform light emission can be obtained in the plane. At this time, the light emitted on the upper side of Fig. 1G is shielded by the n-side electrode 95 at the left end portion of the semiconductor light-emitting function layer 91, but is shielded from the transparent electrode 96 in most areas. Therefore, as shown by the dotted arrow in Fig. 1(), uniform light emission can be taken out. By using the transparent electrode as an electrode connected to one of the electrodes, the potentials on the surfaces of both sides of the semiconductor light-emitting function layer 91 can be made uniform, and a light-emitting element that emits light uniformly can be obtained. However, in the case of using, for example, a GaN-based semiconductor, generally, a structure in which an n-type semiconductor layer is epitaxially grown on an insulating substrate and a P-type semiconductor layer is epitaxially grown thereon is used. With this configuration, as long as the substrate is not removed, the configuration of Fig. 10 is not easily realized. Therefore, the configuration shown in the plan view (a) and the cross-sectional view (b) in the Q-Q direction is used. Here, a light-emitting element having an elongated shape around 4 201234663 is displayed. In this configuration, the semiconductor light-emitting function layer 190 is formed on the insulating substrate 80. The semiconductor light-emitting function layer 19 is composed of an n-type semiconductor layer 191 and a light-emitting layer 192 and a p-type semiconductor layer 193 thereon. The p-type semiconductor layer 193 and the light-emitting layer 192 are partially removed at the right end portion. In the majority of the central portion of this configuration, a transparent electrode 194 is formed on the p-type semiconductor layer 193. Further, an insulating layer 195 is formed on the entire surface thereof. In the insulating layer 195, an opening reaching the p-type semiconductor layer 193 is formed on the left side, and an opening reaching the n-type semiconductor layer 191 is formed on the right side. In a state where these openings are covered, the p-side electrode 196 is formed on the left side and the n-side electrode 丨97 is formed on the right side. Further, the description of the insulating layer 195 is omitted in the plan view (Fig. 11 (a)). With this configuration, a current can flow through the light-emitting layer 192 between the p-type semiconductor layer 193 and the n-type semiconductor layer 191, and the entire region indicated by w in Fig. u(a) can be taken out through the transparent electrode 194. However, in general, the resistivity of the transparent electrode 194 or the p-type semiconductor layer 193 is lower than that of the n-type semiconductor layer 191, the p-side electrode 196, and the n-side electrode 197. Further, the p-type semiconductor layer 193 is not easily thickened. Therefore, in the current path from the (four) electrode 196 to the η-side electrode 197, the transparent electrode i94, the p-type semiconductor, the resistance of the layer 193, or the resulting voltage drop cannot be ignored. In this case, it is difficult to make the current flowing to the light-emitting layer 192 uniform in the left-right direction in Fig. U, and the unevenness of the light emission in this direction is experimentally obtained. The light emission is the strongest to the right side of the η-side electrode 197. In order to eliminate the above unevenness, a plan view in which the p-side electrode 丨 96 is elongated to the right k is shown in Fig. 12 (a), and a cross-sectional view in the R_R direction 201234663 is shown in Fig. 12 (b). In this configuration, the p-side electrode 196 is elongated in the right direction, and contact is made between the transparent electrode 194 at a plurality of portions, whereby the electric resistance between the P-side electric 15196 and the p-type semiconductor layer 193 is lowered: The potential of the p-type semiconductor layer 193 is uniformized. Further, the p-side electrode 196 is opaque to light emission, but its width is narrowed in the upper and lower directions in Fig. 12 in the light-emitting region, whereby the amount of light shielded by it can be reduced. Further, in the case where the light-emitting elements are used in a dimensional or two-dimensional array, not only the uniformity of light emission in the light-emitting elements but also the interference between adjacent light-emitting elements is required. For this purpose, Patent Document 2 discloses a technique of shielding a side surface of the p-side electrode or the n-side electrode through the insulating layer to shield light. [Patent Document 1] Japanese Patent Application Laid-Open No. Hei No. Hei. No. Hei. No. Hei. In the case of the composition, it is not easy to eliminate the uneven growth of the light of the long court. In particular, when the aspect ratio of the light-emitting region is, for example, a large aspect ratio of i: 1 上述, the unevenness is changed. (4) The technique described in Patent Reading 2 can suppress the light emitted from the side, and cannot be improved. The unevenness of the light emitted above. In other words, a light-emitting element having two electrodes formed on one side of the semiconductor light-emitting function layer is difficult to obtain uniform light-emitting intensity in the longitudinal direction. The above problem is particularly remarkable in the case where the interval between the two electrodes is wide. The present invention has been made in view of the above problems, and an object thereof is to provide an invention that solves the above problems. The present invention has been constructed as follows in order to solve the above problems. In the light-emitting device of the present invention, a (four)-body light-emitting function layer having a second-conductor layer of a second conductivity type, which is a conductivity type opposite to the first conductivity type, is formed on a semiconductor layer having a germanium conductivity type. The two electrodes for energizing the semiconductor light-emitting function layer are formed on the main surface of the semiconductor light-emitting function layer on which the semiconductor layer is formed, and the feature is: One end of the semiconductor light-emitting function layer is formed so as to be connected to the first semiconductor layer from a portion where the second semiconductor layer is removed from the main surface side, and a transparent electrode is formed on the surface of the second semiconductor layer. a side of the end of the square is formed to extend toward a side of the end of the square; and a second electrode is formed on the transparent electrode by being connected to the transparent electrode on the side of the other end; at least In the region where the light-emitting intensity of the semiconductor light-emitting function layer is the highest, the first electrode or the second electrode is covered with an insulating layer. The light-emitting element of the present invention is on the semiconductor light-emitting function layer. The region where the light emission intensity is the highest is a region including one end of the one end side of the transparent electrode. In the light-emitting device of the present invention, the end portion of the semiconductor light-emitting function layer is tapered, and at least the first electrode and the second electrode are covered with the insulating layer to cover the semiconductor light-emitting function after the taper processing The end of the layer. In the light-emitting device of the present invention, the insulating layer covers the transparent electrode and the semiconductor light-emitting functional layer; and the first electrode and the second electrode are respectively connected to the ith semiconductor layer via openings formed in the insulating layer, The 201234663 transparent electrode. In the light-emitting device of the present invention, one of the second electrodes extends from the side of the other end portion toward the side of the one end portion, and is connected to the transparent electrode at the portion after the extension. In the light-emitting element 10 of the present invention, the first electrode is formed to be closer to the other end than the end portion of the second electrode facing the one end portion of the second electrode in a state in which the first electrode is not in contact with the second electrode. The shape of the side of the section extends. In the light-emitting device of the present invention, the portion of the second semiconductor layer that is removed from the main surface side at the end portion of the semiconductor light-emitting device layer is formed in the semiconductor light-emitting portion so that the first semiconductor layer is exposed at the bottom portion. An opening of the functional layer; the first electrode is connected to the first semiconductor layer at the bottom. In the light-emitting device of the present invention, the first semiconductor layer is formed on the germanium substrate by epitaxial growth. In the light-emitting device of the present invention, the first semiconductor layer is made of an n-type nitride semiconductor, and the second semiconductor layer is made of a p-type nitride semiconductor. Since the present invention is constructed as described above, a light-emitting element having two electrodes formed on one surface of the semiconductor light-emitting device layer can obtain uniform light-emitting intensity in the longitudinal direction. [Embodiment] Hereinafter, a light-emitting device according to an embodiment of the present invention will be described. In the light-emitting element, a side electrode (anode) and an n-side electrode (cathode) are formed on one side of the main surface of the semiconductor light-emitting function layer. Further, the semiconductor light-emitting function layer 8 201234663 has a slim shape in a direction from the p-side electrode toward the ?-side electrode. (First Embodiment) Fig. 1 is a plan view (a) of a light-emitting device 第 in a first embodiment and a cross-sectional view (b) in the A-A direction. 2(a) to (e) are cross-sectional views in the B_B direction, the C-C direction, the D-D direction, the E-E direction, and the F_F direction in (a). The semiconductor light-emitting device layer 2 in which the light-emitting element 10 emits light is formed on the Si substrate 11, and has an n-type GaN layer (i-th semiconductor layer) 21, an MQW (Multi Quantum WeU) layer η, and a p-type GaN layer (p. 2 Semiconductor layer) 23 is a laminated structure. The main luminescent layer in this configuration is layer 22. In the region on the side (right end) side of one of FIG. 1(b), the p-type GaN layer 23 and the layer 22 are partially removed. Therefore, the semiconductor light-emitting function layer 20 contributing to light emission is The end portion on the right side is a position indicated by τ in Fig. i. As shown in the cross-sections of Fig. 1(b) and Fig. 2, the Si substrate i in type GaN layer 21, MQW layer 22, p type (10) layer & And the end portion of the laminated structure formed by the above is tapered. Further, although not shown, the structure of Fig. 1 is integrally formed on the support substrate. ----- Wang Wei), from the end of one side The portion (left end portion) side extends toward the right end portion side, and the transparent electrode 31 is formed in the vicinity of the right end „ρ (the position of the Τ) of the ip type (10) layer 23. Further, the entire structure is covered with a blank material. In the region where the region on the left end side is Β-Β, and the region where the right end side p-type layer 23 and the layer 22 are partially removed (the portion of the cross section F_F), the insulating layer 3 2 is formed. The opening of the opening page is again, in the seven parts of the transparent electrode 31 between the two (for example, the portion of the section DD), the smaller opening is also formed in 20123466. 3 Insulation, 32. In addition, the insulating layer is omitted in the top view (Fig. 1(a)). The p-side electrode (anode:...?) is connected to the left end of the area, and the seven parts are also connected. There is a region where the p-side electrode = is laterally extended. A metal material that is opaque to light emission but has a small rate is used for the P-side electrode 33. As shown in the top view (Fig. (10), the p-side electrode 33, = region, is formed The semiconductor light-emitting device is covered with the insulating layer 32. The entire portion also includes the tapered end portion. On the other hand, the region where the region of ... is partially extended is formed in the upper and lower directions in FIG. 1(a). The electrode 31 is slightly thicker only in the portion of the opening. The cross section of the non-opening portion (the portion of the cross-section c_c) of the extended region is as shown in Fig. 2 (8), and the cross-section of the portion on the opening (the portion of the cross-section DD) is a map. 2(4) On the other hand, the n-side electrode (first electrode: cathode) 34 is connected to the n-type coffee layer 21 at the portion of the cross-section F_F, and is not in contact with the transparent electrode Ip-side electrode Μ and the n-side electrode 34. The n-side electrode 34, Similarly to the p-side electrode 33 in the region on the right side, the system is formed to cover the right side region. The semiconductor light-emitting function layer 2 has the entire laminated structure, and includes the end face of the semiconductor light-emitting layer 2, and the 11-side electrode 34 passes over the area where the germanium-type GaN layer 23 and the MQW layer 22 are partially removed, 丨A The area, that is, the right end of the semiconductor light-emitting layer 2 of Figure 1 (a) (the position of T in the circle 1 (4)), also covers the upper side of the semiconductor light-emitting function layer 20 on the left side. The crystal substrate is doped with impurities to form a local conductivity, and is not doped to have a high resistivity. The semiconductor light-emitting function layer 20 (11 type (four) layer 2i, MQw layer type (4) layer 23) is good in the pot. The way in which heterogeneous insect crystals grow can be appropriately oriented. 10 201234663 The n-type GaN layer 21, the MQW layer 22, and the p-type GaN layer 23 can be by MBE (Molecular Beam Epitaxy) method, or MOCVD (Metal Organic)
Chemical Vapor Deposition)法在Si基板11上磊晶成長。在 n型GaN層21適當摻雜作為施體之雜質，在p型GaN層 23適當摻雜作為受體之雜質。^型GaN層21之厚度可為例 如5.0ym，p型GaN層23之厚度可為例如〇2em程度。 又’ MQW層22具有例如數nm〜數10nm厚度之InGaN、GaN 薄膜複數積層之構造，：[nGaN、GaN之各層與n型GaN層 21、p型GaN層23同樣地係藉由磊晶成長形成。 在半導體發光機能層20之右端部之區域，為了除去p 型GaN層23、MQW層22使n型GaN層21露出，在此區 域以外形成光阻，以此作為光罩進行乾式蝕刻。又，將半 導體發光機能層20加工成圖！之形態，且使端部錐狀化之 步驟’係藉由以上述順序形成半導體發光機能層2〇後、在 ^上形成錐形狀之光阻、以此作為光罩進行乾式钱刻來進 行。光阻之錐狀化可藉由曝光條件或顯影條件之調整進 行。藉此’能使圖1(b)所示之端部之雜角為例如％ 透明電極31，作為能與？型㈣層23歐姆接觸且對 二導體發光機能層20發出之光為透明之材料，以例如 IT〇(Ind1Um_Tin_〇xid )或 八Zn0(Zlnc-〇xide)等構成。此外， ==型⑽層23之間之歐姆性或密合性等，在此 層。：：:插入缚…分透射過程度之鈦㈤層或錦⑽ 面使上f ”1之圖案能使用下述任-方法形成，⑴在整 使上述透明電極材料成膜，在所欲部位形成光阻等光罩 201234663 後進行蝕刻，除去所欲部位以外之透明電極材料（蝕刻法）， (2)在所欲部位以外形成光阻等光罩後在整面使上述透明電 極材料成膜，之後除去光罩以除去所欲部位以外之透明電 極材料（剝離法）。此外，由於構成透明電極3丨之材料要求 间光透射率，因此其導電率較構成p側電極Μ、η側電極 34之材料低。因此，在圖1中左右方向之透明電極31之電 阻’一般而言較ρ側電極33、η側電極34高。 絕緣層32係以具有充分絕緣性且對此發光元件丨〇(半 導體發光機能層20)發出之光為透明之材料構成，例如以氧 化石夕（Si02)構成。其形成，可藉由使用例如The Chemical Vapor Deposition method is epitaxially grown on the Si substrate 11. The n-type GaN layer 21 is appropriately doped as an impurity of the donor, and the p-type GaN layer 23 is appropriately doped as an impurity of the acceptor. The thickness of the ^-type GaN layer 21 may be, for example, 5.0 μm, and the thickness of the p-type GaN layer 23 may be, for example, about 2 μm. Further, the MQW layer 22 has a structure in which a plurality of layers of InGaN and GaN thin films having a thickness of, for example, several nm to several tens of nm are laminated, and [each layer of nGaN and GaN is grown by epitaxial growth similarly to the n-type GaN layer 21 and the p-type GaN layer 23; form. In the region at the right end of the semiconductor light-emitting function layer 20, in order to remove the p-type GaN layer 23 and the MQW layer 22, the n-type GaN layer 21 is exposed, and a photoresist is formed outside the region, thereby performing dry etching as a mask. Further, the semiconductor light-emitting function layer 20 is processed into a figure! In the form of the step of tapering the end portion, the semiconductor light-emitting function layer 2 is formed in the above-described order, and a tapered photoresist is formed on the surface of the semiconductor light-emitting layer 2, thereby performing dry etching as a mask. The taper of the photoresist can be adjusted by exposure conditions or development conditions. Therefore, the angle of the end portion shown in Fig. 1(b) can be made, for example, as the % transparent electrode 31, as an energy source. The type (four) layer is a material which is in contact with 23 ohms and which is transparent to light emitted from the two-element luminescent function layer 20, and is composed of, for example, IT 〇 (Ind1Um_Tin_〇xid) or octa Zn0 (Zlnc-〇xide). Further, the ohmicity or adhesion between the layers of the == type (10) 23 is in this layer. ::: Inserting the binding ... The titanium (five) layer or the brocade (10) surface of the transmission process can be formed by using the following method: (1) forming the film of the transparent electrode material and forming the desired portion. After the photomask 201234663 is etched, the transparent electrode material other than the desired portion is removed (etching method), and (2) a mask such as a photoresist is formed outside the desired portion, and the transparent electrode material is formed on the entire surface. Thereafter, the mask is removed to remove the transparent electrode material other than the desired portion (peeling method). Further, since the material constituting the transparent electrode 3 is required to have a light transmittance therebetween, the conductivity thereof is higher than that of the p-side electrode η and the η-side electrode 34. Therefore, the resistance of the transparent electrode 31 in the left-right direction in Fig. 1 is generally higher than that of the p-side electrode 33 and the n-side electrode 34. The insulating layer 32 is sufficiently insulating and has a light-emitting element The light emitted by the (semiconductor light-emitting function layer 20) is made of a transparent material, for example, oxidized stone (SiO 2 ). It can be formed by using, for example,
Vapor Deposltion)法等，高被覆性形成在右端部區域ρ型Vapor Deposltion) method, high coverage is formed in the right end region p type
GaN層23與MQW層22被除去部位之段差部、或錐狀化之 端部。 P側電極33係以紹（A1)等導電性高之金屬形成。n側電 本34係以與n型GaN層2 J取得歐姆接觸之材料構成。ρ 側電極33、n側電極34之圖案能與透明電極31之圖案同 樣地進行。構成ρ側電極33、η側電極34之材料不要求光 透射率之強度…匕，能使此等之導電率較構成透明電極 31之透明電極材料高’可,t、視ρ側電極33或η側電極34 中，電阻（或此等導致之電壓下降）。另—方面，半導體發光 機能層20發出之光不會透射過ρ側電極33、η側電極34。 根據圖1之構成，由於能在圖i中左右方向之廣範圍 取得P側電極33與透明電極31之間之電氣連接，因此能 縮小P側電極33與透明電極31之間之電阻。藉此，亦能 12 201234663 縮小P側電極33與D刑ΓίίΜ a P i GaN層23之間之電阻，可提高在 ::向(長邊方向)之發光之均句性。此處，來自發光層之 被往右側延伸之P側電極33遮蔽，但此延伸區域在上 〇因此訖縮小其遮蔽量。此點與圖12之構造相同。 此f I半導體發光機能層之上形成彳p側電極 3 3、η侧電極3 4夕π认、 * ^ 、 之£域’來自半導體發光機能層20之發光 被遮蔽。另一卡品 Α , ’來自在半導體發光機能層20上未形成 Ρ側電極33、η侧雷炻以七广丄 電極34之區域之發光朝向圖i(b)之上側 發出。 ，土上述p側電極33之構成，在長邊方向之發光之均 勻性提间然而，此情形，一般而言，在半導體發光機能 層20之接近與n側電極34之接觸區域（開口部）側之發光最 強圖1之構造中，由於此發光最強之區域尤其是被η側 電極34覆蓋’因此遍布長邊方向能獲得均句之發光。一般 而。11侧電極34將半導體發光機能層2〇(透明電極3 i)從 其右端部覆蓋之長度為1GG//m程度以上則有效。在此區域 半導體發光機能層20朝向圖1⑻中之上側發出之光被n侧 電極34遮蔽而往下側反射。之後，藉由㈣被以禁制帶寬 狹窄之矽構成之Si基板11中吸收。 又，半導體發光機能層20之右側區域從圖1(a)之右 側、上側、下側之端面發出之光亦被覆蓋端部之n側電極 34反射、吸收。此時，與圖1(b)中之上側發出之光同樣地， 在半導體發光機能層20之右側區域此光亦變強。此光，在 將此·發光元件10作為陣列使用之情形，不易與相鄰元件之 13 201234663 發光識別，因此較不佳。亦,, ^ 亦即，此影響亦藉由上述構造降 低。同樣地，半導體發氺她At a 1 Λ . 干争趙贫元機旎層20之左側區域從圖1(a)中 之左側、上側、下側之側面發出之光被覆蓋端部之p側電 極33反射 '吸收。藉由將半導體發光機能層鳩丨基板u 之端面如上述錐狀加卫，能提高P側電極33、n側電極34 在此等之側面之被覆性。 此外’上述構成中’ n側電極34將半導體發光機能層 2〇(Ρ型GaN層23)從其右端部了朝向ρ側電極33之右側之 前端部附近為止之範圍覆蓋。然而，只要能獲得左右方向（長 邊方向）之發光之均句性，則覆蓋之範圍尤其是在左側可適 田λ疋 般而5，發光強度最高為透明電極31之右端部 (在一方端部側之透明電極31之一端）周邊。此情形至少 在包含透明電極31之右端部之區域之pfGaw 23之上 部隔著絕緣層32被η側電極34覆蓋即可。 (第2實施形態） 圖3係第2實施形態之發光元件11〇之俯視圖⑷及其 G-G方向之剖面圖（b)e又，圖4(a)〜（〇分別係圖3(幻中η η 方向、I-Ι方向、j_j方向之剖面圖。構成此之Si基板1丄、 半導體發光機能層20等與第i實施形態相同，因此省略說 明（以後之實施形態亦相同）。又，圖3(a)中半導體發光機能 層20之右端部為以τ表示之位置之點亦相同。此外，與圖 1中B-B方向、c_C方向、d-D方向、F邛方向之剖面對應 之部位之構造與第i實施形態相同。 在此發光元件110，η側電極34在較半導體發光機能 14 201234663 層20之右端部T更左側未形成。亦即，半導體發光機能層 2〇發出之光未被η側電極34遮蔽。 替代性地，在此發光元件11〇，ρ側電極33之右端部 大幅擴展’越過半導體發光機能層2G之右端部τ，覆蓋半 導體發光機能層20之右側端部附近及圖3(a)中之上側、下 側、右側之側面。藉此，與第！實施形態相同，來自發光 強度高之區域之發光被p側電極33遮蔽，遍布長邊方向能 獲得均勻之發光。又，可獲得高散熱效果亦相同。p側電極 33應覆蓋p型GaN層23(半導體發光機能層2〇)之範圍亦與 第1實施形態相同。 (第3實施形態） 圖5係第3實施形態之發光元件2丨〇之俯視圖及其 K-K方向之剖面圖（b)。又，圖6(a)、（b)分別係圖5(勾中 方向、M-M方向之剖面圖。又，與圖1中b_B方向、c_c 方向、D-D方向之剖面對應之部位之構造與第1實施形態相 同。 在此發光元件2 1 0，尤其是在右側區域之半導體發光機 能層20等之構造與上述實施形態大幅不同。首先，在上述 實施形態，η型GaN層21上之MQW層22、p型GaN層23 在右側端部附近一樣地被除去’相對於此，在此發光元件 210,僅在n型GaN層露出區域212局部地除去該等。亦即， 在半導體發光機能層20中之此區域，形成η型GaN層21 在底部露出之開口部。之後，對在此開口部所含之η側接 觸區域2 13之絕緣層32形成開口，在其上形成η側電極34， 15 201234663 藉此在底部連接η側電極34與n型GaN層2丨。此η側電 極34之俯視形狀與第丨實施形態相同，為覆蓋至η型⑽ 層露出區域212之左側為止之形態β ρ側電極33之構造、 形態與第1實施形態相同β 在此構造，發光強度最高之透明電極31之右端部與ρ 型GaN層23從主面側被除去之部位之間被η側電極34覆 蓋。因此，與帛1實施形態相同，遍布長邊方向能獲得均 勻之發光。又’此構造之情形，遍布η型⑽層露出區域 212以外之廣泛區域p型GaN層2卜透明電極η等亦殘留， 在η側接觸區$ 213之周圍之n侧電極34之表面積亦變 大’因此尤其是能提高散熱效果。 (第4實施形態） 圖7係第4實施形態之發光元件31〇之俯視圖⑷及立 Ν-Ν方向之剖面圖⑻。又，圖8係圊7⑷中〇_〇方向之； 面圖。又，與圖"Β-Β方向、c_c方向' dd方向、Μ 方向、ρ·ρ方向之剖面對應之部位之構造㈣i實施形態相 同。 匕 此發光元件310’與第丨實施形態之發光元件1〇相較， η俏:電極34為更往左側延伸之形狀，為包圍p侧電極η之 右端部之形狀H η側電極34，在與⑽電極Μ不接 觸^狀態下’料為較ρ側電極33之1分朝向右側（一方 之端部側)延伸部分之前端部更朝向左側(另一方之端部之 侧）延伸之形狀。 ° 在此構造’與第卜第3實施形態相較，能使被η側電 16 201234663 極34 光。又 高0 遮光之區域更往左側擴展 ’由於η側電極34之面積 ，因此能獲得更均勻之發 變大，因此其散熱效果更 (第5實施形態） 圖9係第5實施形態之發光元件41〇之俯視圖⑷及立 ::::向之剖面圖，此發光元件41。與第i〜第4實施形 心發先tc件不同，⑼p側電極33朝向n側電極μ之方 向不是長邊方向，與此垂直之方向為 , π扠透万向。P側電極 之形狀’與圖1 〇中ρ側電極94 極34延伸之形狀。 不疋朝向η側電 5圖9(b)係在此長邊方向之剖面圖，此構造與圖1(b)相 亦即’η側電極34延伸至較半導體發光機能層2〇之端 部Τ更靠Ρ側電極33冑，藉此發光強度高之部位被遮光。 如上述，即使從Ρ側電極朝向Π側電極之方向不是長 邊方向之情形’亦可採用相同之構造。藉&，散熱效果提 向亦相同。 此外，上述第1〜第5實施形態之構造當然可適當組合 使用。 、 上述之例以外’只要為在半導體發光機能層之一方之 端。卩側（與形成有ρ側電極側相反之側）與透明電極端部之 間夕 j_ 區域’ η側電極或ρ側電極隔著絕緣層覆蓋半導體發光 、月b層之表面之形態’則當然可達成相同效果。此情形， 較佳為’使n側電極或ρ側電極覆蓋此區域以外之發光區 之 rPi ^ 積备目小’不妨礙此區域以外之發光。上述η側電極 17 201234663 或P側電極之形狀除了上述之例以外亦可適當設定。 又，在上述構成，記載在si基板11上作為半導體發光 機能層20 ’形成n型GaN層21作為第1半導體層，形成 MQW層22作為發光層，形成p型GaN層23作為第2半導 體層之例。然而，即使不使用MQW層22之情形，亦作為 使用單純pn接合之發光二極體（LED)動作係明確。或者， 作為發光層亦可使用上述構成之MQW層以外之構成。又， 以GaN以外之材料構成半導體發光機能層亦可。此情形， 可依據發光波長設定半導體材料。 又，在上述之例，在基板（Si基板11)侧形成n型半導 體層（第1半導體層），在其上形成ρ型半導體層（第2半導 體層），但在上側之半導體層之導電率低之情形，即使此等 導電型相反亦可達到相同效果係明確。亦即，只要為第i 半導體層與第2半導體層之導電型相反，連接於此等半導 體層之二個電極形成在半導體發光機能層之一方之主面側 之構成，則上述構成有效。 再者，即使半導體發光機能層未形成在基板上，可達 J述效果係明確。又，使用基板之情形，在基板與半導 體發光機能層之間插入用以提高半導體發光機能層之晶體 性之緩衝層亦可。只要將二個電極形成在半導體發光機能 相同主面側，則基板或緩衝層為、絕緣性亦可為導電性 亦可。 又，在磊晶成長，在基板上首先形成導電性高之η型 層’在其上形成導電性低之ρ型層、透明電極之構造，尤 18 201234663 其是上述構成有效係明確。上述構成，尤其是在以上述 為代表之氮化物半導體特別顯著，因此上述構成在使用此 材料之發光元件特別有效。 又，在上述之例，將半導體發光機能層等之端部形成 為錐狀’隔著絕緣層以η側電極或p側電極覆蓋此。然而， 在可忽視來自端面之漏光之情形，不需要上述構成。亦即， η側電極或p側電極不需覆蓋此等之端面。在此情形，亦不 需將端部形成為錐狀。此情形，不—定要在半導體發光機 能層被電極覆蓋部分以外之絕緣層。 Λ 【圓式簡單說明】 圖1係本發明第1實施形態之發光元件之俯視圖⑷及 其Α-Α方向之剖面圖（b)。 圖2係本發明第1實施形態之發光元件之B_B方向之 剖面圖⑷、c-c方向之剖面圖(b)、D_D方向之剖面圖⑷、 E-E方向之剖面圖（d)、F_F方向之剖面圖（e)。 圖3係本發明第2實施形態之發光元件之俯視圖⑷及 其G-G方向之剖面圖（b)。 圖4係本發明第2實施形態之發光元 圖5係本發明帛3實施形態之發光元件之俯視圖⑷及 其κ-κ方向之剖面圖（b)。 圖6係本發明第3實施形態之發光元件 剖面圖⑷、方向之剖面圖(b)。 向之 圖7係本發明第4實施形態之發光元件之俯視圖⑷及 19 201234663 其ν·ν方向之剖面圖(b)。 圖8係本發明第 施形態之發 剖面圖。 1干之〇-〇方向之 之俯視圖（a)及 ® 9係本發明第5實施形態之發光元件 其P-P方向之剖面圓（b)。 圖10係習知發光元件之一例之剖面圖。 圖1 1係在一方之主面側形成有兩電極之習知發光元件 之一例之俯視圖（a)及其Q_Q方向之剖面圖 圖12係在一方之主面側形成有兩電極之習知發光元件 之另一例之俯視圖（a)及其R_R方向之剖面圖（b)。 【主要元件符號說明】 10, 90, 110, 210, 310, 410 發光元件 11 Si基板（基板） 20, 91，190 半導體發光機能層 21 11型GaN層（第1半導體層） 22, 192 MQW層（發光層） 23 P型GaN層（第2半導體層） 31，96, 194 透明電極 32, 195 絕緣層 33, 94, 196 P側電極（第2電極） 34, 95, 197 η側電極（第i電極） 92, 193 P型半導體層 93, 191 η型半導體層 212 η型GaN層露出區域 20 201234663 213 η側接觸區域 21The GaN layer 23 and the MQW layer 22 are separated from the step portion or the tapered end portion. The P-side electrode 33 is formed of a metal having high conductivity such as A1. The n-side electric device 34 is made of a material that makes ohmic contact with the n-type GaN layer 2 J. The pattern of the ρ side electrode 33 and the n side electrode 34 can be performed in the same manner as the pattern of the transparent electrode 31. The material constituting the ρ-side electrode 33 and the η-side electrode 34 does not require the intensity of light transmittance...匕, and the conductivity can be made higher than the transparent electrode material constituting the transparent electrode 31, t, the ρ-side electrode 33 or In the η-side electrode 34, the resistance (or the voltage caused by this decreases). On the other hand, the light emitted from the semiconductor light-emitting function layer 20 is not transmitted through the p-side electrode 33 and the n-side electrode 34. According to the configuration of Fig. 1, since the electrical connection between the P-side electrode 33 and the transparent electrode 31 can be obtained in a wide range in the left-right direction in Fig. i, the electric resistance between the P-side electrode 33 and the transparent electrode 31 can be reduced. Thereby, the resistance between the P-side electrode 33 and the D-P GaN layer 23 can be reduced by 12 201234663, and the uniformity of the light emission in the :: direction (long-side direction) can be improved. Here, the P-side electrode 33 extending from the right side of the light-emitting layer is shielded, but the extended region is on the upper side, so that the amount of shielding is reduced. This point is the same as the configuration of FIG. On the f I semiconductor light-emitting function layer, the 彳p-side electrode 3 3 and the η-side electrode 3 are formed, and the light emitted from the semiconductor light-emitting function layer 20 is shielded. The other card product ’ is emitted from the side where the side electrode 33 is not formed on the semiconductor light-emitting function layer 20, and the light-emitting region of the ?-side thunder is used as the seventh wide electrode 34 toward the upper side of the figure i(b). The configuration of the p-side electrode 33 of the soil causes the uniformity of the light emission in the longitudinal direction. However, in this case, generally, the contact region (opening portion) of the semiconductor light-emitting function layer 20 close to the n-side electrode 34 is provided. The side of the illuminating is the strongest in the configuration of Fig. 1, since the region where the luminescence is the strongest is covered by the η-side electrode 34 in particular, so that the illuminating of the uniform sentence can be obtained in the longitudinal direction. In general. The 11 side electrode 34 is effective in that the semiconductor light-emitting function layer 2 (transparent electrode 3 i) is covered from the right end portion to a length of about 1 GG/m or more. In this region, the light emitted from the semiconductor light-emitting function layer 20 toward the upper side in Fig. 1 (8) is shielded by the n-side electrode 34 and reflected downward. Thereafter, it is absorbed by the Si substrate 11 which is formed by the narrowing of the forbidden bandwidth by (4). Further, the light emitted from the end faces on the right side, the upper side, and the lower side of Fig. 1 (a) in the right region of the semiconductor light-emitting function layer 20 is also reflected and absorbed by the n-side electrode 34 covering the end portion. At this time, similarly to the light emitted from the upper side in FIG. 1(b), the light also becomes strong in the right region of the semiconductor light-emitting function layer 20. This light is less likely to be used in the case where the light-emitting element 10 is used as an array, and is less likely to be illuminating with the adjacent element 13 201234663, and thus is less preferable. Also, ^, that is, the impact is also reduced by the above structure. Similarly, the semiconductor sends her At a 1 Λ. The left side of the smashed layer 20 of the stagnation element is emitted from the side of the left side, the upper side, and the lower side in Fig. 1(a). Electrode 33 reflects 'absorption. By covering the end surface of the semiconductor light-emitting device layer substrate u as described above, the coating properties of the P-side electrode 33 and the n-side electrode 34 on the side surfaces thereof can be improved. In the above configuration, the n-side electrode 34 covers the semiconductor light-emitting function layer 2 (the GaN-type layer 23) from the right end portion toward the vicinity of the front end portion of the right side of the p-side electrode 33. However, as long as the uniformity of the light emission in the left-right direction (long-side direction) can be obtained, the coverage range is particularly 5 on the left side, and the light-emitting intensity is the highest end of the transparent electrode 31 (at one end). The periphery of one end of the transparent electrode 31 on the side of the portion. In this case, at least the upper portion of the pfGaw 23 including the region at the right end portion of the transparent electrode 31 may be covered by the n-side electrode 34 via the insulating layer 32. (Second Embodiment) Fig. 3 is a plan view (4) of a light-emitting element 11 of a second embodiment, and a cross-sectional view (b) e in the GG direction, and Fig. 4 (a) - (〇, respectively, Fig. 3 (illusion η The cross-sectional view of the η direction, the I-Ι direction, and the j_j direction. The Si substrate 1 丄 and the semiconductor light-emitting function layer 20 and the like are the same as those of the i-th embodiment, and thus the description thereof is omitted (the same applies to the following embodiments). The position of the right end portion of the semiconductor light-emitting function layer 20 in the 3(a) is the same as the position indicated by τ. Further, the structure corresponding to the portion corresponding to the BB direction, the c_C direction, the dD direction, and the F邛 direction in Fig. 1 is In the light-emitting element 110, the n-side electrode 34 is not formed on the left side of the right end portion T of the layer 20 of the semiconductor light-emitting device 14 201234663. That is, the light emitted from the semiconductor light-emitting function layer 2 is not η-side. The electrode 34 is shielded. Alternatively, in the light-emitting element 11A, the right end portion of the ρ-side electrode 33 is greatly expanded 'over the right end portion τ of the semiconductor light-emitting function layer 2G, covering the vicinity of the right end portion of the semiconductor light-emitting function layer 20 and FIG. (a) Upper side, lower side, right side Therefore, similarly to the first embodiment, the light emitted from the region having a high light-emitting intensity is blocked by the p-side electrode 33, and uniform light emission can be obtained in the longitudinal direction. Further, the high heat radiation effect can be obtained. The range of the p-type GaN layer 23 (the semiconductor light-emitting device layer 2) is the same as that of the first embodiment. (3rd embodiment) FIG. 5 is a plan view of the light-emitting element 2 of the third embodiment and its KK. Cross-sectional view of direction (b). Figure 6 (a), (b) are respectively shown in Figure 5 (cross-hook direction, MM direction). Also, with the b_B direction, c_c direction, DD direction of Figure 1 The structure of the corresponding portion is the same as that of the first embodiment. The structure of the light-emitting element 210, particularly the semiconductor light-emitting function layer 20 in the right region, is substantially different from that of the above-described embodiment. First, in the above embodiment, the n-type The MQW layer 22 and the p-type GaN layer 23 on the GaN layer 21 are removed in the same manner in the vicinity of the right end portion. In contrast, the light-emitting element 210 is partially removed only in the n-type GaN layer exposed region 212. That is, in this area in the semiconductor light-emitting function layer 20 An opening portion of the n-type GaN layer 21 exposed at the bottom is formed. Thereafter, an opening is formed in the insulating layer 32 of the n-side contact region 2 13 included in the opening portion, and an n-side electrode 34 is formed thereon, 15 201234663 The n-side electrode 34 and the n-type GaN layer 2 are connected to the bottom. The plan view of the n-side electrode 34 is the same as that of the second embodiment, and is a form β ρ side electrode 33 covering the left side of the exposed region 212 of the n-type (10) layer. The structure and the configuration are the same as those of the first embodiment. In this configuration, the right end portion of the transparent electrode 31 having the highest luminous intensity and the portion where the p-type GaN layer 23 is removed from the main surface side are covered by the n-side electrode 34. Therefore, as in the embodiment of the crucible 1, uniform light emission can be obtained in the longitudinal direction. Further, in the case of this structure, the p-type GaN layer 2, the transparent electrode η, and the like, which remain over a wide area other than the exposed region of the n-type (10) layer, remain, and the surface area of the n-side electrode 34 around the n-side contact region $213 also changes. Big 'so especially improves heat dissipation. (Fourth Embodiment) Fig. 7 is a plan view (4) and a cross-sectional view (8) of a light-emitting element 31 of the fourth embodiment. Further, Fig. 8 is a 〇_〇 direction in 圊7(4); Further, the structure (4) of the portion corresponding to the cross section of the graph "quot-Β direction, c_c direction" dd direction, Μ direction, and ρ·ρ direction is the same as the embodiment. In contrast, the light-emitting element 310' is compared with the light-emitting element 1A of the second embodiment, and the electrode 34 has a shape extending further to the left side, and is a shape H η side electrode 34 surrounding the right end portion of the p-side electrode η. In the state in which the electrode Μ is not in contact with the (10) electrode ^, the material is formed to have a shape in which the end portion of the ρ-side electrode 33 is extended toward the right side (the end portion of the other end portion) toward the left side (the side of the other end portion). In this configuration, compared with the third embodiment, it is possible to generate light 34 by the η side electric 16 201234663 pole. In addition, the area of the light-shielding region is further extended to the left side. Since the area of the η-side electrode 34 is increased, the heat radiation effect is further improved. (Fifth Embodiment) FIG. 9 is a light-emitting element according to the fifth embodiment. 41俯视 top view (4) and vertical:::: sectional view, the light-emitting element 41. Unlike the i-th to the fourth embodiment, the (c) direction of the p-side electrode 33 toward the n-side electrode μ is not the longitudinal direction, and the direction perpendicular thereto is π-forked. The shape of the P-side electrode is the same as that of the p-side electrode 94 of FIG. FIG. 9(b) is a cross-sectional view in the longitudinal direction. This structure is the same as FIG. 1(b), that is, the 'n-side electrode 34 extends to the end of the semiconductor light-emitting layer 2〇. The crucible is further turned on by the side electrode 33, whereby the portion having a high luminous intensity is shielded from light. As described above, the same configuration can be employed even in the case where the direction from the side electrode to the side electrode is not the long side. With &, the cooling effect is also the same. Further, the configurations of the first to fifth embodiments described above can of course be used in combination as appropriate. In addition to the above examples, it is only one end of the semiconductor light-emitting function layer. Of course, the side of the yoke (the side opposite to the side on which the ρ-side electrode is formed) and the end of the transparent electrode are the same as the surface of the surface of the moon b layer with the insulating layer covering the semiconductor light-emitting layer or the ρ-side electrode. The same effect can be achieved. In this case, it is preferable that the n-side electrode or the ρ-side electrode covers the light-emitting region other than the region, and the rPi^ product is small, which does not hinder the light emission outside the region. The shape of the n-side electrode 17 201234663 or the P-side electrode may be appropriately set in addition to the above examples. In the above configuration, the n-type GaN layer 21 is formed as the first semiconductor layer on the Si substrate 11 as the semiconductor light-emitting function layer 20', the MQW layer 22 is formed as the light-emitting layer, and the p-type GaN layer 23 is formed as the second semiconductor layer. An example. However, even in the case where the MQW layer 22 is not used, it is clear as a light-emitting diode (LED) operation using pure pn junction. Alternatively, a configuration other than the MQW layer having the above configuration may be used as the light-emitting layer. Further, a semiconductor light-emitting function layer may be formed of a material other than GaN. In this case, the semiconductor material can be set in accordance with the wavelength of the light emitted. Further, in the above example, an n-type semiconductor layer (first semiconductor layer) is formed on the substrate (Si substrate 11) side, and a p-type semiconductor layer (second semiconductor layer) is formed thereon, but the semiconductor layer on the upper side is electrically conductive. In the case of a low rate, even if these conductivity types are reversed, the same effect can be achieved. In other words, the above configuration is effective as long as the second semiconductor layer and the second semiconductor layer are opposite in conductivity type, and the two electrodes connected to the semiconductor layer are formed on one side of the main surface of the semiconductor light-emitting function layer. Furthermore, even if the semiconductor light-emitting functional layer is not formed on the substrate, the effect can be made clear. Further, in the case of using a substrate, a buffer layer for improving the crystallinity of the semiconductor light-emitting function layer may be inserted between the substrate and the semiconductor light-emitting function layer. As long as the two electrodes are formed on the same main surface side of the semiconductor light-emitting device, the substrate or the buffer layer may have electrical conductivity or may be electrically conductive. Further, in the epitaxial growth, a highly conductive n-type layer is formed on the substrate first, and a p-type layer having a low conductivity and a transparent electrode are formed thereon, and it is clear that the above-described configuration is effective. The above-described configuration is particularly remarkable in the nitride semiconductor represented by the above, and therefore the above-described configuration is particularly effective in a light-emitting element using the material. Further, in the above example, the end portion of the semiconductor light-emitting function layer or the like is formed into a tapered shape. The insulating layer is covered with the n-side electrode or the p-side electrode. However, in the case where light leakage from the end face can be ignored, the above configuration is not required. That is, the η-side electrode or the p-side electrode does not need to cover these end faces. In this case, it is also unnecessary to form the end portion into a tapered shape. In this case, it is not necessary to have an insulating layer other than the portion where the semiconductor light-emitting function layer is covered by the electrode. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view (4) and a cross-sectional view (b) of a light-emitting device according to a first embodiment of the present invention. 2 is a cross-sectional view (4) in the B_B direction, a cross-sectional view (b) in the cc direction, a cross-sectional view (4) in the D_D direction, a cross-sectional view (d) in the EE direction, and a cross-sectional view in the F_F direction of the light-emitting element according to the first embodiment of the present invention. (e). Fig. 3 is a plan view (4) and a cross-sectional view (b) of the light-emitting element according to the second embodiment of the present invention in the G-G direction. Fig. 4 is a view showing a light-emitting element according to a second embodiment of the present invention. Fig. 5 is a plan view (4) of a light-emitting device according to a third embodiment of the present invention, and a cross-sectional view (b) in a κ-κ direction thereof. Fig. 6 is a cross-sectional view (4) and a cross-sectional view (b) of a light-emitting device according to a third embodiment of the present invention. Fig. 7 is a cross-sectional view (b) of the light-emitting element of the fourth embodiment of the present invention in a plan view (4) and 19 201234663 in the ν·ν direction. Fig. 8 is a cross-sectional view showing the embodiment of the present invention. The top view (a) and the ninth aspect of the light-emitting element according to the fifth embodiment of the present invention are cross-sectional circles (b) in the P-P direction. Fig. 10 is a cross-sectional view showing an example of a conventional light-emitting element. Fig. 11 is a plan view (a) showing an example of a conventional light-emitting element in which two electrodes are formed on one main surface side, and a cross-sectional view in the Q_Q direction. Fig. 12 is a conventional luminescence in which two electrodes are formed on one main surface side. A top view (a) of another example of the component and a cross-sectional view (b) of the R_R direction. [Description of main component symbols] 10, 90, 110, 210, 310, 410 Light-emitting element 11 Si substrate (substrate) 20, 91, 190 Semiconductor light-emitting function layer 21 Type 11 GaN layer (first semiconductor layer) 22, 192 MQW layer (Light-emitting layer) 23 P-type GaN layer (second semiconductor layer) 31, 96, 194 Transparent electrode 32, 195 Insulating layer 33, 94, 196 P-side electrode (second electrode) 34, 95, 197 η-side electrode (No. i electrode) 92, 193 P-type semiconductor layer 93, 191 n-type semiconductor layer 212 n-type GaN layer exposed region 20 201234663 213 η-side contact region 21