TW201233486A - Mounting method and mounting apparatus - Google Patents

Mounting method and mounting apparatus Download PDF

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Publication number
TW201233486A
TW201233486A TW100147900A TW100147900A TW201233486A TW 201233486 A TW201233486 A TW 201233486A TW 100147900 A TW100147900 A TW 100147900A TW 100147900 A TW100147900 A TW 100147900A TW 201233486 A TW201233486 A TW 201233486A
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Taiwan
Prior art keywords
wafer
substrate
electrode
reaction force
solder
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TW100147900A
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Chinese (zh)
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TWI580510B (en
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Katsumi Terada
Mikio Kawakami
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Toray Eng Co Ltd
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Publication of TW201233486A publication Critical patent/TW201233486A/en
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Publication of TWI580510B publication Critical patent/TWI580510B/en

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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

To provide a mounting method and mounting apparatus for thermocompression-bonding a chip having a fine solder bump such as a pillar bump formed thereon onto a substrate, whereby it is possible to determine whether or not the pillar bump is thermocompression-bonded well onto an electrode on the substrate. To provide a mounting method and mounting apparatus comprising: a procedure of moving a chip downward to the substrate side while holding the chip by a thermocompression-bonding tool; a procedure of increasing the temperature of the thermocompression-bonding tool that holds the chip thereon to a solder melting temperature after the pillar bump on the chip contacts the electrode on the substrate; a first reaction force measurement procedure of pressing the chip toward the substrate side by a predetermined indentation depth and measuring the reaction force from the electrode on the substrate upon the completion of the pressing; a second reaction force measurement procedure of measuring a reaction force from the electrode disposed on the substrate upon the melting of the solder allocated on the pillar bump; and a reaction force determination procedure of determining the success or failure of the alignment of the molten pillar bump with the electrode by the measurement results obtained in the first reaction force measurement procedure and the measurement results obtained in the second reaction force measurement procedure.

Description

201233486 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明是關於將在配設於倒裝晶片（flip chip)的 柱狀的柱（pi 1 lar)的頂端形成有銲料（s〇lder)的附有 柱狀凸塊（pillar bump)的倒裝晶片熱壓接合 (thermocompression b〇nding)於基板（substrate) 之安裝方法（moimting method)及安裝裝置（m〇unting apparatus) ° [先前技術] 〇 [_ 近年來’來自高密度安裝（high density mounting)的要求使得鋅料凸塊（solder bumps)也縮短 電極間隔（electrode interval)，也使用凸塊（bump) 的構造帶有圓度（soundness)的球狀凸塊（bail bump) 到柱狀的形狀的凸塊。在專利文獻1揭示有將凸塊間距 (bump pitch)作成超微細的柱狀的柱狀凸塊。柱狀凸塊 是在以帘間距立設的Cu等的柱（圓柱狀）的頂端形成半球 狀的銲料。頂端的銲料也有半球狀的情形，且也有使頂 端部平坦化成橢圓狀者《因此，與習知的銲球（s〇lder ball)型的銲料凸塊比較，可使凸塊間距微細。而且，可 對應高密度安裝。該等銲料部分因柱（圓柱）的底面的面 積為微小面積’故與習知的銲球型的銲料凸塊比較，以 極少量的銲料形成有銲料接合部分。 [專利文獻1 ]日本國特開2006-245288號公報 【發明内容】 [0003] 若想將形成有這種柱狀凸塊的晶片熱壓接合於基板 10014790(f·單編號 A0101 第3頁/共27頁 1013045307-0 201233486 並檢查接合狀態的話，則有如下的問題。 晶片與基板的對準為影像辨識設於晶片及基板的對 準標記（alignment mark)，根據影像辨識資 持晶片賴壓接合工具餘持基㈣基板平台而^= 準。因此，即使晶片與基板根據對準標記而被對準，若 柱狀凸塊與基板的電極的中心位置超過規定範圍，則= 在緊壓晶片時，柱狀凸塊由電極位置偏移而滑落的問題（ 特別疋在凸塊間距被微細化的柱狀凸塊中，對準的限度 Uargln)窄，柱狀凸塊與電極的對準成為困難的狀況） 柱狀凸壤由電極位置偏移而滑落的狀態的晶片與基板 的接合成為招致電路的短路等情況不佳的因素。 而且’因配設於柱狀凸塊的頂端的銲料的量比習知 的球狀凸塊少’故也有因利用加熱器（heater)進行的銲 料的加熱與晶片的緊壓力的平衡，使得在柱與電極之間 熔融的銲料被壓壞，而被由電極的接合面擠出的問題。 因此’本發明的課題為提供一種安裝方法及安裝裝 置’在將形成有柱狀凸塊等的微細的銲料凸塊的晶片熱 壓接合於基板的安裝方法中，可判定柱狀凸塊是否被良 好地熱壓接合於基板的電極。 為了解決上述課題’記載於申請專利範圍第1項的發 明是一種安裝方法，一邊將配設於晶片的柱狀凸塊緊壓 於配設於基板的電極’一邊加熱並熱壓接合於配設於基 板的電極，包含： 以熱壓接合工具保持晶片並使其下降至基板側之程 序； 10014790^^^ A〇101 在晶片的柱狀凸塊接觸基板的電極後， 第4頁/共27頁 1013045307-0 201233486 使保持晶片的熱壓接合工具的溫度升溫至銲料熔融 溫度之程序； 將晶片壓入基板侧僅預先被設定的壓入量，測定壓 入完了時的來自基板的電極的反作用力之第一反作用力 測定程序；以及 測定配設於柱狀凸塊的銲料熔融時的來自基板的電 極的反作用力之第二反作用力測定程序， 由前述第一反作用力測定程序的測定結果與前述第 二反作用力測定程序的測定結果，判定熔融了的柱狀凸 塊與電極的對準的好壞之反作用力判定程序。 記載於申請專利範圍第2項的發明是在申請專利範圍 第1項的發明中，包含： 在晶片的柱狀凸塊接觸基板的電極後， 測定保持晶片的熱壓接合工具的升降位置之第一高 度測定程序； 以預先被設定的壓力，將晶片緊壓於基板側預先被 設定的時間後， 測定保持晶片的熱壓接合工具的升降位置之第二高 度測定程序；以及 由前述第一高度測定程序的測定結果與前述第二高 度測定程序的測定結果，求因緊壓晶片造成的晶片與基 板的間隔的變化，判定銲料熔融前的柱狀凸塊與電極的 對準的好壞之沉入量判定程序。 記載於申請專利範圍第3項的發明是一種安裝裝置， 包含： 保持配設有柱狀凸塊的晶片之熱壓接合工具； 1001479〇产單編號 A0101 第5頁/共27頁 1013045307-0 201233486 保持具有接合有晶片的柱狀凸塊的電極的基板之基 板平台； 使保持晶片的熱壓接合工具升降於保持基板的基板 平台侧之驅動手段； 檢測保持晶片的熱壓接合工具的升降位置之高度檢 測手段； 檢測保持晶片的熱壓接合工具緊壓基板時的緊壓力 之荷重檢測手段； 使熱壓接合工具的溫度升溫之加熱器；以及 以前述南度檢測手段測定晶片南度位置資訊，以前 述荷重檢測手段測定給予晶片的緊壓力，控制前述驅動 手段與前述加熱器之控制手段， 前述控制手段具有： 使前述加熱器升溫至銲料熔融溫度，由驅動前述驅 動手段將熱壓接合工具壓入基板側僅預先被設定的壓入 量時的以前述荷重檢測手段測定的檢測荷重，與配設於 柱狀凸塊的銲料熔融時的檢測荷重，判定熔融了的柱狀 凸塊與電極的對準的好壞的功能。 記載於申請專利範圍第4項的發明是在申請專利範圍 第3項的發明中，前述控制手段具有： 在晶片的柱狀凸塊接觸基板的電極後， 以預先被設定的壓力，將晶片緊壓於基板側預先被 設定的時間’由因緊壓造成的晶片與基板的間隔的變化 判定熔融前的柱狀凸塊與電極的對準的好壞的功能。 [0004] 【發明的功效】 薩479(#單編號皿01 第6頁/共27頁 1013045307-0 201233486 依照記載於申請專利範圍第】項的發明，藉由孰壓接 合工具減具備絲凸塊的晶片並下降到基板側。铁後 ’晶片的柱狀凸塊接觸基板的電極後，將保持晶片的熱 壓接合工具的溫度升溫至鋅料炫融溫度。然後，當熱屋 接合工具的溫度傳導至柱狀凸塊時，將晶片壓入基板側 僅預先被設定的壓人量。然後，以配設於熱壓接合工具 的荷重檢測手段測定晶片的壓人完了時的來自基板的電 極的反作用力’當作第-反作用力測定結果記憶於控制 手段（第-反作用力測定程序）。另一方面，藉由熱壓接 合工具的溫度傳導至柱狀凸塊，使得配設於柱狀凸塊的 锝料的熔融進行下去。因此，即使在預先被設定的壓入 量的狀態下熱壓接合工具保持升降位置，柱狀凸塊的銲 料一熔融，來自基板的電極的反作用力就一點一點地降 低下去。 ϋ 因此，在申清專利範圍第1項的發明中，在到配設於 柱狀凸塊的銲料熔融為止之預先被設定的時間（柱狀凸塊 的銲料的熔融完了的時間）經過後，測定來自基板的電極 的反作用力，當作第二反作用力測定結果記憶於控制手 段（第二反作用力測定程序）。然後，由記憶於控制手段 的第一反作用力測定結果與第二反作用力測定結果判定 熔融了的柱狀凸塊與電極的對準的好壞（反作用力判定程 序）。 柱狀凸塊與電極的位置偏移一發生，就成為炫融了 的柱狀凸塊的銲料被由基板的電極的接合面擠出的狀態 。與以電極的接合面支播溶融了的銲料全體的情形比較 ’來自電極的反作用力使銲料減少由電極擠出的份。 10014790(^^^^ A0101 第7頁/共27頁 1013045307-0 201233486 更具體為，在第一反作用力測定程序中因柱狀凸塊 的銲料未完全熔融，故若柱狀凸塊被對準於電極的接觸 面（柱狀凸塊抵接的面），則即使由電極的接觸面擠出一 些，僅將晶片壓入規定的壓入量，也能由電極受到規定 的範圍的反作用力。但是，在柱狀凸塊的銲料熔融的狀 態下，於電極的接觸面的全部中，在柱狀凸塊的銲料藉 由電極的接合面全體支撐的情形，與柱狀凸塊的銲料的 一部分由電極擠出的情形會產生反作力的不同。第二反 作用力測定程序因成為柱狀凸塊的銲料熔融的狀態，故 當銲料由電極的接合面擠出時，因壓入晶片造成的來自 電極的反作用力比藉由電極的接觸面的全部支撐的情形 還低而被檢測出。 可由該等反作用力的測定結果（第一反作用力測定程 序的測定結果與第二反作用力測定程序的測定結果）判定 晶片的柱狀凸塊與基板的電極是否被良好地對準而被熱 壓接合（反作用力判定程序）。 依照記載於申請專利範圍第2項的發明，在申請專利 範圍第1項的發明中，更藉由熱壓接合工具保持具備柱狀 凸塊的晶片並下降到基板側，在晶片的柱狀凸塊接觸基 板的電極後，測定保持晶片的熱壓接合工具的升降位置（ 第一高度測定程序）。 然後，以預先被設定的壓力，將晶片緊壓於基板侧 僅預先被設定的時間後*測定保持晶片的熱壓接合工具 的升降位置（第二高度測定程序）。 然後，由第一高度測定程序的測定結果與第二高度 測定程序的測定結果，求因緊壓造成的晶片與基板的間 A0101 第8頁/共27頁 1013045307-0 201233486 隙的變化，判定銲料熔融前的柱狀凸塊與電極的對準（沉 入量判定程序）。 在晶片的柱狀凸塊接觸基板的電極的狀態下，因熱 壓接合工具不升溫，故成為柱狀凸塊的銲料不熔融的固 相狀態。因此，若柱狀凸塊的銲料的接觸位置被對準於 基板的電極的接合面的範圍，則成為柱狀凸塊的頂端的 銲料碰觸電極的接合面的狀態。在此狀態下，即使以預 先被設定的壓力，將晶片緊壓於基板僅預先被設定的時 間，只是伴隨緊壓的柱狀凸塊的銲料的變形份也會成為 〇 晶片與基板的間隙的變化。但是，當柱狀凸塊的銲料的 接觸位置脫離電極的接觸面，一部分接觸電極的接觸面 的端部時，若以規定壓力緊壓晶片規定時間，則因來自 電極的接觸面的反作用力不足，故伴隨緊壓量晶片就會 沉入基板侧。因此，晶片與基板的間隙與柱狀凸塊的頂 端的銲料被對準於電極的接合面内的情形比較就會縮短 因此，藉由由柱狀凸塊接觸電極的熱壓接合工具的 升降位置之第一高度測定程序的測定結果，與以規定壓 力緊壓晶片規定時間後的熱壓接合工具的升降位置之第 二高度測定程序的測定結果，求晶片與基板的間隙的變 化，可判定熔融前的柱狀凸塊的銲料與電極的對準是否 被良好地進行（沉入量判定程序）。 依照記載於申請專利範圍第3項的發明，安裝裝置包 含：保持具備柱狀凸塊的晶片之熱壓接合工具；保持基板 之基板平台；使保持了晶片的熱壓接合工具升降於保持 了基板的基板平台侧之驅動手段；檢測保持了晶片的熱 1013045307-0 10014790(^單編號A0101 第9頁/共27頁 201233486 壓接合工具的升降位置之高度檢測手段；檢測保持了晶 片的熱壓接合工具緊壓基板時的緊壓力之荷重檢測手段 ;使熱壓接合工具的溫度升溫之加熱器；根據以高度檢 測手段檢測的晶片高度位置與以荷重檢測手段檢測出的 熱壓接合工具的緊壓力控制驅動手段之控制手段。 再者，控制手段具有使加熱器升溫至銲料熔融溫度 ，驅動驅動手段僅預先被設定的壓入量，將接觸基板的 電極之具備柱狀凸塊的晶片壓入基板側，以荷重檢測手 段測定配設於柱狀凸塊的銲料熔融前的來自電極的反作 用力，與銲料熔融後的來自電極的反作用力，判定柱狀 凸塊與電極的對準的好壞的功能。 在將加熱器升溫至銲料熔融溫度後，到配設於被保 持於熱壓接合工具的晶片的柱狀凸塊的頂端的銲料熔融 下去為止需要時間經過。其間根據高度檢測手段的檢測 結果，精密地藉由荷重檢測手段檢測壓入晶片，伴隨壓 入之來自電極的反作用力。即使柱狀凸塊的銲料部分被 對準於電極的接合面，當一部分擠出時，來自規定時間 經過後的電極的反作用力與未擠出的情形比較變少。可 藉由荷重檢測手段正確地檢測該等反作用力的微妙的不 同，檢測出柱狀凸塊的位置偏移。 依照記載於申請專利範圍第4項的發明，控制手段具 有：在晶片的柱狀凸塊接觸基板的電極的接合面後，以規 定壓力將晶片緊壓於基板側規定時間。藉由高度檢測手 段測定因緊壓造成的晶片與基板的間隙的變化，判定熔 融前的柱狀凸塊的銲料與電極的對準的好壞的功能。 藉由使熱壓接合工具下降，藉由高度檢測手段測定 薩479(#單編號應01 第10頁/共27頁 1013045307-0 201233486 被保持於熱壓接合工具的晶片的柱狀凸塊接觸的位置， 藉由荷重檢測手段一邊將晶片的緊壓力保持於規定的值 ，一邊緊壓規定時間。可藉由以高度檢測手段測定緊壓 完了時的熱壓接合工具的位置，測定晶片與基板的間隙 的變化。 晶片的柱狀凸塊一被對準於電極的接合面，銲料熔 融前的柱狀凸塊的銲料由於是固相狀態，故依照緊壓量 而變形，變形量成為晶片與基板的間隙的變化。但是， 在柱狀凸塊與電極的對準中，柱狀凸塊一位於電極的接 合面的端，晶片就依照緊壓力而沉入基板側。這種情形 在緊壓完了時，晶片與基板的間隙和柱狀凸塊與電極被 對準的情形比較，縮短了。因使用由晶片與基板的間隙 的變化判定對準的好壞之控制手段，故可良好地檢測出 熔融前的柱狀凸塊的位置偏移。 如此依照本發明，可判定銲料凸塊是否被良好地熱 壓接合於基板的電極。 【實施方式1 [0005] 參照圖面針對本發明的實施的形態進行說明。圖1是 本發明的實施的形態的安裝裝置之侧視圖，圖2是在安裝 裝置使用的晶片2與基板6之侧視圖。在圖1中設朝安裝裝 置1左右方向為X袖’設前後方向為Y轴*設正交於由X轴 與Y軸構成的XY平面的軸為Z軸，設繞Z軸旋轉為0軸。 安裝裝置1是由如下的構件構成：吸附保持晶片2的頭 (head)8 ;吸附保持基板6的基板平台11 ;辨識設於晶片 2與基板6的對準標記之2視野攝影機13 ;控制安裝裝置1 全體之控制部20。 1(){)1479{)(^單編號 A0101 第 11 頁 / 共 27 頁 1013045307-0 201233486 在頭8内裝有檢測被賦予晶片2的外加壓力（appiie(j pres sure)之測力器（load cel 1)10。在頭8的下側裝設 有吸附保持晶片2的工具（tool)9。在工具9内裝有加熱 器16與熱電偶（thermocouple)18，可根據來自控制部 20的指令將晶片2加熱而構成（在圖1中加熱器16以虛線標 記）。頭8是藉由驅動控制伺服馬達（servo „!〇1;0〇14與 連結於飼服馬達14的滾珠螺桿（bal 1 screw) 15而升降 於Z方向上下。本發明的驅動手段是藉由伺服馬達14與滾 珠螺桿15構成。 而且’頭8是可根據來自控制部20的指令進行控制緊 壓力的荷重控制，與控制Z轴高度位置的位置控制之控制 而構成。本發明的熱壓接合工具是藉由頭8與工具9構成 〇 頭8的緊壓力透過馬達的轉矩（torque)控制較佳， 惟若為音圈電動機（voice coil motor)及/或氣壓紅 (pneumatic cylinder)等產生緊壓力的裝置的話，則 無論哪個手段（means)都可以。 為了在荷重控制中將緊壓力保持一定，在Z方向上下 變動的移動量可藉由由伺服馬達14的編碼器 (encoder) 19構成的位置檢測手段取得位置資訊而構成 °位置檢測手段若為可在Z方向測定位置的話，則在外部 使用線性標度（linear scale)等也可以。 基板平台11可藉由未圖示的驅動機構移動於X、γ、 0方向’可將被吸附保持的基板6定位於規定的位置而構 成。 2視野攝影機13被插入被吸附保持於工具9的晶片2 10014790(^^^ A0101 第12頁/共27頁 1013045307-0 201233486 ’與被吸賴胁騎平川的電絲板6之間，可 辨識被附加於晶片2及基板6的對準標^通常是，機 位置⑻的虛線標記部分）待機，可在影像辨識時移動至 影像辨齡置⑷2與㈣獨。 _動至 a- ^ j rrj τψ: 一阳”月即⑼配設有CU製的 銅製的支柱）。在柱4的頂端形成有鲜料5。201233486 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a solder (s〇) formed on a tip end of a columnar column (pi 1 lar) disposed on a flip chip a lder) method of mounting a thermocompression bucking on a substrate with a pillar bump and a mounting device (m〇unting apparatus) ° Technology] 〇[_ In recent years, the requirements for high density mounting have resulted in zinc bumps also shortening the electrode spacing and also using bump construction with roundness. (boundness) of a ball bump to a columnar shape of the bump. Patent Document 1 discloses a columnar bump in which a bump pitch is formed into an ultra-fine columnar shape. The stud bumps are hemispherical solders formed at the tips of columns (columns) of Cu or the like which are erected at the curtain pitch. The tip solder is also hemispherical, and the top end portion is flattened into an elliptical shape. Therefore, the bump pitch can be made fine compared with a conventional solder ball type solder bump. Moreover, it can be installed in accordance with high density. Since the solder portion has a small area due to the area of the bottom surface of the column (cylinder), the solder joint portion is formed with a very small amount of solder as compared with the conventional solder ball type solder bump. [Patent Document 1] JP-A-2006-245288 SUMMARY OF INVENTION [0003] A wafer on which such stud bumps are formed is to be thermocompression bonded to a substrate 10014790 (f. single number A0101, page 3/ A total of 27 pages 1013045307-0 201233486 and check the bonding state, there are the following problems. The alignment of the wafer and the substrate is to identify the alignment mark on the wafer and the substrate, and to identify the wafer pressure according to the image identification. The bonding tool rests on the substrate (4) and the substrate is aligned. Therefore, even if the wafer and the substrate are aligned according to the alignment mark, if the center position of the columnar bump and the electrode of the substrate exceeds a prescribed range, then = the wafer is pressed When the columnar bumps are displaced by the positional deviation of the electrodes (especially in the columnar bumps in which the bump pitch is miniaturized, the alignment limit Uargln) is narrow, and the alignment of the columnar bumps with the electrodes becomes Difficult situation) The bonding of the wafer and the substrate in a state in which the columnar convex soil is displaced by the positional displacement of the electrode is a factor that causes a short circuit of the circuit or the like. Moreover, 'the amount of solder disposed at the tip end of the stud bump is smaller than that of the conventional ball bumps', so there is also a balance between the heating of the solder by the heater and the pressing pressure of the wafer, so that The solder melted between the column and the electrode is crushed and is squeezed by the joint surface of the electrode. Therefore, the object of the present invention is to provide a mounting method and a mounting device for determining whether or not a columnar bump is to be thermally bonded to a substrate by a method in which a wafer having fine solder bumps such as stud bumps is thermally bonded to a substrate. The electrode of the substrate is bonded to the substrate well. In order to solve the above problem, the invention described in the first aspect of the patent application is a mounting method in which a columnar bump disposed on a wafer is pressed against an electrode disposed on a substrate and heated and bonded to the electrode assembly. The electrode on the substrate comprises: a program for holding the wafer by a thermocompression bonding tool and lowering it to the substrate side; 10014790^^^ A〇101 After the columnar bump of the wafer contacts the electrode of the substrate, page 4 of 27 Page 1013045307-0 201233486 Procedure for raising the temperature of the thermocompression bonding tool for holding the wafer to the solder melting temperature; pressing the wafer into the substrate side only by the preset pressing amount, and measuring the reaction of the electrode from the substrate when the pressing is completed a first reaction force measuring program for determining a force; and a second reaction force measuring program for measuring a reaction force of the electrode from the substrate when the solder of the columnar bump is melted, the measurement result of the first reaction force measuring program is The measurement result of the second reaction force measurement program determines the reaction force determination program of the alignment of the molten columnar bumps and the electrodes. According to the invention of claim 2, in the invention of claim 1, the method of measuring the lifting position of the thermocompression bonding tool for holding the wafer after the columnar bump of the wafer contacts the electrode of the substrate a height measuring program; a second height measuring program for determining a lifting position of the thermocompression bonding tool holding the wafer after the wafer is pressed against the substrate side for a predetermined time; and the first height is The measurement result of the measurement program and the measurement result of the second height measurement program determine the change in the interval between the wafer and the substrate due to the pressing of the wafer, and determine the alignment of the columnar bump and the electrode before the solder is melted. The quantity determination procedure. The invention described in claim 3 is a mounting device comprising: a thermocompression bonding tool for holding a wafer provided with stud bumps; 1001479〇Ordinance No. A0101 Page 5/Total 27 Page 1013045307-0 201233486 a substrate platform for holding a substrate having electrodes for bonding the columnar bumps of the wafer; a driving means for moving the thermocompression bonding tool for holding the wafer to and from the substrate platform side of the holding substrate; and detecting a lifting position of the thermocompression bonding tool for holding the wafer a height detecting means; a load detecting means for detecting a tight pressure when the hot press bonding tool holding the wafer is pressed against the substrate; a heater for heating the temperature of the hot pressing bonding tool; and measuring the south position information of the wafer by the south detecting means, The pressing force applied to the wafer is measured by the load detecting means to control the driving means and the control means of the heater. The control means includes: heating the heater to a solder melting temperature, and pressing the driving means to press the hot pressing bonding tool The load detecting means at the time of entering the substrate side only by the preset pressing amount The detected load to be measured and the detected load when the solder disposed on the stud bumps were melted were used to determine the alignment of the molten columnar bumps and the electrodes. According to the invention of claim 4, in the invention of claim 3, the control means includes: after the columnar bump of the wafer contacts the electrode of the substrate, the wafer is tightened at a predetermined pressure The time set in advance on the substrate side is set as a function of determining the alignment of the columnar bumps before the melting and the electrodes by the change in the interval between the wafer and the substrate due to the pressing. [Effect of the Invention] Sa 479 (#单号皿01 6th page/total 27 pages 1013045307-0 201233486 According to the invention described in the scope of the patent application), the wire bonding tool is reduced by the rolling bonding tool The wafer is lowered to the substrate side. After the iron, the columnar bump of the wafer contacts the electrode of the substrate, and the temperature of the thermocompression bonding tool that holds the wafer is raised to the zinc material melting temperature. Then, when the temperature of the hot house bonding tool When it is guided to the columnar bump, the wafer is pressed into the substrate side only by the amount of pressing force set in advance. Then, the load detecting means provided in the thermocompression bonding tool measures the electrode from the substrate when the pressing of the wafer is completed. The reaction force 'memorizes the result of the first-reaction force measurement in the control means (the first-reaction force measurement program). On the other hand, the temperature of the thermocompression bonding tool is transmitted to the columnar bump so that it is disposed on the columnar convex The melting of the material of the block proceeds. Therefore, even if the hot-press bonding tool maintains the lifting position in a state in which the pressing amount is set in advance, the solder of the columnar bump is melted, and the electrode from the substrate is reversed. Therefore, in the invention of the first paragraph of the patent application, the predetermined time (column bump) until the solder disposed on the stud bumps is melted After the melting of the solder is completed, the reaction force of the electrode from the substrate is measured, and the result of the second reaction force measurement is memorized in the control means (second reaction force measuring program). Then, the memory is controlled by the control means. The result of the reaction force measurement and the measurement result of the second reaction force determine the alignment of the molten columnar bump and the electrode (reaction force determination program). When the positional deviation of the columnar bump and the electrode occurs, it becomes The solder of the stud bump which is melted and melted is extruded by the joint surface of the electrode of the substrate. Compared with the case where the molten solder is distributed by the joint surface of the electrode, the reaction force from the electrode reduces the solder by the electrode. Extrusion. 10014790(^^^^ A0101 Page 7 of 271013045307-0 201233486 More specifically, in the first reaction force measurement procedure, the solder of the stud bumps is not finished. Fully fused, so if the stud bump is aligned with the contact surface of the electrode (the surface on which the stud bump abuts), even if the contact surface of the electrode is squeezed out, only the wafer is pressed into the predetermined amount of press, It is also possible to receive a reaction force in a predetermined range from the electrode. However, in the state in which the solder of the columnar bump is melted, the solder on the columnar bump is supported by the joint surface of the electrode in all of the contact faces of the electrode. In the case where a part of the solder of the stud bump is extruded by the electrode, a difference in the reaction force is generated. The second reaction force measuring program is a state in which the solder of the stud bump is molten, so when the solder is made of the electrode When the joint surface is extruded, the reaction force from the electrode due to the press-fitting of the wafer is detected lower than the case where the entire surface of the contact surface of the electrode is supported. It can be determined from the measurement results of the reaction forces (the measurement results of the first reaction force measurement program and the measurement results of the second reaction force measurement program) whether or not the columnar bumps of the wafer and the electrodes of the substrate are well aligned and hot pressed. Engagement (reaction force determination procedure). According to the invention of claim 2, in the invention of claim 1, the wafer having the stud bumps is held by the thermocompression bonding tool and lowered to the substrate side, and the columnar convexity of the wafer After the block contacts the electrode of the substrate, the lifting position (first height measuring program) of the thermocompression bonding tool holding the wafer is measured. Then, the wafer is pressed against the substrate side at a pressure set in advance, and the elevating position of the thermocompression bonding tool for holding the wafer (second height measurement program) is measured only after a predetermined time. Then, the measurement result of the first height measurement program and the measurement result of the second height measurement program are used to determine the change in the gap between the wafer and the substrate due to the pressing, A0101, 8th, and 27th, 1013045307-0, 201233486. Alignment of the columnar bumps before melting with the electrodes (sinking amount determination procedure). In the state in which the columnar bumps of the wafer contact the electrodes of the substrate, the thermocompression bonding tool does not heat up, so that the solder of the columnar bumps does not melt in a solid phase state. Therefore, when the contact position of the solder of the stud bump is aligned in the range of the bonding surface of the electrode of the substrate, the solder bump of the tip end of the stud bump is in the state of the bonding surface of the electrode. In this state, even if the wafer is pressed against the substrate for a predetermined time by the pressure set in advance, only the deformation portion of the solder accompanying the pressed columnar bumps becomes a gap between the wafer and the substrate. Variety. However, when the contact position of the solder of the stud bump is separated from the contact surface of the electrode and a part of the contact surface of the contact surface of the electrode is pressed, if the wafer is pressed at a predetermined pressure for a predetermined time, the reaction force from the contact surface of the electrode is insufficient. Therefore, the wafer sinks into the substrate side with the amount of pressing. Therefore, the gap between the wafer and the substrate and the solder at the tip end of the stud bump are aligned in the joint surface of the electrode, and thus the lifting position of the tool is bonded by the hot pressing of the columnar bump contacting the electrode. The measurement result of the first height measurement program is determined by the measurement result of the second height measurement program of the elevating position of the thermocompression bonding tool after pressing the wafer for a predetermined time at a predetermined pressure, and the change in the gap between the wafer and the substrate is determined. Whether the alignment of the solder of the front stud bumps with the electrodes is performed well (the sinking amount determination program). According to the invention of claim 3, the mounting apparatus includes: a thermocompression bonding tool that holds a wafer having stud bumps; a substrate platform that holds the substrate; and a thermocompression bonding tool that holds the wafer is lifted and lowered to hold the substrate Driving means on the substrate platform side; detecting and maintaining the heat of the wafer 1013045307-0 10014790 (^ single number A0101 page 9 / total 27 pages 201233486 height detecting means of the lifting position of the pressure bonding tool; detecting and maintaining the thermocompression bonding of the wafer a load detecting means for tightening the pressure when the tool is pressed against the substrate; a heater for raising the temperature of the thermocompression bonding tool; and a pressing force of the hot pressing bonding tool detected by the load detecting means according to the height position of the wafer detected by the height detecting means The control means controls the driving means to increase the temperature of the heater to the solder melting temperature, and the drive driving means is only set in advance, and the wafer having the columnar bumps of the electrode contacting the substrate is pressed into the substrate. On the side, the load from the electrode before the melting of the solder disposed on the stud bump is measured by the load detecting means The force, the reaction force from the electrode after melting the solder, determines the function of the alignment between the stud bump and the electrode. After the heater is heated to the solder melting temperature, it is placed in the thermocompression bonding. It takes time to pass the solder at the tip end of the columnar bump of the wafer of the tool. Between the detection results of the height detecting means, the load-inducing means is precisely detected by the load detecting means, and the reaction force from the electrode is pressed. Even if the solder portion of the stud bump is aligned with the joint surface of the electrode, when a part is extruded, the reaction force from the electrode after the lapse of a predetermined time is less than that of the non-extrusion case. In order to detect the subtle difference of the reaction forces, the positional deviation of the columnar bumps is detected. According to the invention described in claim 4, the control means has the columnar bumps on the wafer contacting the electrodes of the substrate. After the bonding surface, the wafer is pressed against the substrate side by a predetermined pressure for a predetermined time. The wafer and the substrate due to the pressing are measured by the height detecting means. The change of the gap determines the function of the alignment of the solder and the electrode of the stud bump before melting. By lowering the thermocompression bonding tool, the sacrificial means is used to measure Sa 479 (#单编号应01第10 pages/total 27 pages 1013045307-0 201233486 The position of the columnar bump of the wafer of the thermocompression bonding tool is held, and the pressing force of the wafer is maintained at a predetermined value by the load detecting means, and the predetermined time is pressed. The change in the gap between the wafer and the substrate can be measured by measuring the position of the thermocompression bonding tool when the pressing is completed by the height detecting means. The columnar bump of the wafer is aligned with the bonding surface of the electrode, before the solder is melted. Since the solder of the stud bump is in a solid phase state, it is deformed according to the amount of pressing, and the amount of deformation is a change in the gap between the wafer and the substrate. However, in the alignment of the stud bump and the electrode, the stud bump 1 At the end of the joint face of the electrode, the wafer sinks into the substrate side in accordance with the pressing force. In this case, when the pressing is completed, the gap between the wafer and the substrate and the case where the stud bumps are aligned with the electrodes are shortened. Since the control means for judging the alignment by the change in the gap between the wafer and the substrate is used, the positional deviation of the stud bumps before melting can be favorably detected. Thus, in accordance with the present invention, it can be determined whether the solder bumps are well bonded to the electrodes of the substrate by good thermal compression. Embodiment 1 [0005] An embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a side view of a mounting device according to an embodiment of the present invention, and Fig. 2 is a side view of the wafer 2 and the substrate 6 used in the mounting device. In Fig. 1, the left and right directions of the mounting device 1 are X sleeves, and the front and rear directions are Y axes. * The axis orthogonal to the XY plane formed by the X axis and the Y axis is the Z axis, and the Z axis is rotated to the 0 axis. . The mounting device 1 is composed of a member that adsorbs and holds the wafer 2; a substrate platform 11 that adsorbs and holds the substrate 6; and a two-view camera 13 that recognizes alignment marks provided on the wafer 2 and the substrate 6; The control unit 20 of the entire device 1. 1(){)1479{)(^单号 A0101第11页/共27页1013045307-0 201233486 The first 8 is equipped with a force measuring device for detecting the applied pressure (appiie(j pressure)) given to the wafer 2 ( Load cel 1) 10. A tool 9 for absorbing and holding the wafer 2 is mounted on the lower side of the head 8. A heater 16 and a thermocouple 18 are mounted in the tool 9, according to the control unit 20 The command is to heat the wafer 2 (the heater 16 is indicated by a broken line in Fig. 1). The head 8 is a servo motor (servo „!〇1; 0〇14 and a ball screw connected to the feeding motor 14 by driving control). The bal 1 screw) 15 is lifted up and down in the Z direction. The driving means of the present invention is constituted by the servo motor 14 and the ball screw 15. Moreover, the 'head 8 is load control capable of controlling the pressing pressure according to an instruction from the control unit 20, And the control of the position control for controlling the height position of the Z-axis. The thermocompression bonding tool of the present invention is preferably controlled by the torque of the head 8 and the tool 9 forming the pressure of the hammer 8 through the motor, but For voice coil motor and / or pneumatic red (pneumatic cyli Any device that generates a tight pressure, such as nder), can be used for any means. In order to keep the tight pressure constant during the load control, the amount of movement that varies up and down in the Z direction can be obtained by the encoder of the servo motor 14 ( The position detecting means configured by the 19 is configured to obtain the position information. If the position detecting means is capable of measuring the position in the Z direction, a linear scale or the like may be used externally. The substrate platform 11 may be omitted. The driving mechanism shown in the X, γ, and 0 directions can be configured to position the substrate 6 that is adsorbed and held at a predetermined position. 2 The field camera 13 is inserted into the wafer 2 that is adsorbed and held by the tool 9 10014790 (^^^ A0101 Page 12/Total 27 pages 1013045307-0 201233486 'The alignment mark attached to the wafer 2 and the substrate 6 can be recognized between the wire board 6 that is sucked by Lai-Hui, and is usually the dotted line of the machine position (8). Marking part) Standby, which can be moved to the image recognition level (4) 2 and (4) alone during image recognition. _ move to a- ^ j rrj τψ: One yang "month (9) is equipped with a copper pillar made of CU). The top of 4 is formed with fresh Material 5.

與銲獅成柱狀凸塊3。在基板6配設有電極 =面被施以_(S。如plating)7a。在基板6極的7電的 極7的周圍填充有非導電性熱固性樹脂（__ conductive therm〇setting resin)之接著舞川。在 電極7設有與柱狀凸塊3接合的平坦的接合面7b。 CU製的柱4的形狀是使用圓柱狀的形狀。此外，柱4 不限於圓柱狀，為多角形的柱或圓錐狀的柱均可，若為 在柱的頂卿成有銲料5者即可。例如為像圖抑）的形狀 也可以。 ，針對這種使用安裝裝置1將晶片2安裝於基板6的安裝 〇 T法’使用圖3的流程圖與說明圖4的安裝狀態的圖表進 行說明。圖4為在橫軸標記時間，在縱袖標記頭峨袖方 向的高度及測力器1〇的檢測荷重。 首先，在頭8的工具9吸附保持有晶片2，於在基板平 台11吸附保持有基板6的狀態下，由頭8下降到基板6側規 定高度（搜尋高度）的狀態開始。晶片2的對準標記與基板 6的對準標記預先透過2視野攝影機進行影像辨識，根據 影像辨識資料，基板平台lm對準於χ、γ、0方向。而 且’工具9的加熱器16被暖和至預熱溫度η。在預熱溫度 T1T ’銲料魏由固減祕至祕狀態的軟化狀態（例 1001479#單編號A〇101 第13頁/共27頁 1013045307-0 201233486 之編石馬 如160°C等）。頭8的驅動控制是根據高度檢測手段 驟 器1 9的檢測位置驅動飼服馬達14而被進行位置控制（米 ST00)。 夕 其次’以低速使頭8僅下降規定高度。—邊排 7的周圍的接著劑17，柱狀凸塊3 —邊下降。該狀態成為 圖4的tO的時序（timing)。成為柱狀凸塊3接近到電核7 的附近的狀態。頭8逐漸下降，進行檢測柱狀凸塊3的項 端的銲料5接觸電極7的時序之搜尋動作（步驟st〇i)。 其次’藉由測力器1〇檢測出荷重P1 (步驟ST〇2)。以 荷重P1當作搜尋荷重。圖4的時序tl為柱狀凸塊3的銲料5 接觸了電極7的時序。將頭8的驅動控制切換成根據測力 器10的檢測荷重進行的荷重控制。 柱狀凸塊3的銲料5 一接觸電極7，被暖和至預熱溫度 T1的工具9的溫度就會被傳導至基板6侧。 而且，若晶片2藉由搜尋荷重P1而被按壓於基板6， 被預先填充至基板6的接著劑〗7就被由柱狀凸塊3與電極7 的接觸的部分擠出。該製程被進行乃因^接著劑口殘留 於柱狀凸塊3與電極7之間，則會在之後的製程成為製品 情況不佳。 其次，維持搜尋荷重P1規定時間tml(步驟ST03) 在晶片2配設有複數個柱狀凸塊3 度有微妙的不同 各自的枉狀凸塊3的高 Μ ’ 11由維持搜尋荷重P1規定時間 tml，r㈣柱狀錢_極7的接⑽接地。 、：貝8的w度檢測手段之編碼H19計測頭8 ==並記._制部2〇(步驟_。計測是: 圖4的時序t2被進行。高声 在 麵9#賴麵 *i4i/共=的計測對應本發明的第 1013045307- 201233486 一高度測定程序。 其次，將頭8的設定荷重變更為P2(步驟ST05)。在 預熱狀態（例如160°C左右的狀態）下，形成於柱狀凸塊3 的頂端的銲料5不熔融。銲料5在由固相狀態移至液相狀 態的階段中成為軟化的狀態。因此，藉由頭8被以設定荷 重P 2進行荷重控制，使軟化的鐸料5被壓入電極7，使形 狀變形。 其次，以設定荷重P2荷重控制頭8如下的時間：圖4 的時序t3到t4的規定時間tm2。 其次，藉由頭8的高度檢測手段之編碼器19計測頭8 的高度位置H2並記憶於控制部20(步驟ST06)。高度位置 H2的計測對應本發明的第二高度澍定程序。 藉由由頭8的荷重控制的設定荷重P1變更為P2，使 柱狀凸塊3被壓入電極7。此時，當柱狀凸塊3與電極7的 接合面7b位置偏移時，藉由步驟ST04與步驟ST08計測的 頭8的高度位移量（H1-H2)就會超過預先被設定的容許值 (allowable value)Ha。因此，在以設定荷重P2進行荷 重控制規定時間tm2後，判定頭8的高度位移量（ΙΠ-Η2) 是否為容許值Ha的範圍内（步驟ST07)。判定是在圖4的 時序t4被進行。頭8的高度位移量（H1-H2)對應晶片2與 基板6的間隙的變化，是否為容許值Ha的範圍内的判定是 對應本發明之判定熔融前的銲料凸塊與電極的對準的好 壞之沉入量判定程序。當超過容許值Ha的頭8的高度位移 量（ΙΠ-Η2)被檢測出時，將作業中基板6有銲料5與電極7 的位置偏移不良記憶於控制部20(步驟ST07NG)。 容許值Ha為將柱狀凸塊3的銲料5被對準於電極7的 1001479#單編號廳01 第15頁/共27頁 1013045307-0 201233486 接合面7b的中心附近的情形設定為基準。當在銲料5與接 合面7b的接觸位置產生偏差，一部分接觸電極7的端部時 ，若以設定荷重P2緊壓晶片2僅規定時間tm2，則因來自 電極7的反作用力不足，故晶片2伴隨緊壓量就會沉入基 板6侧。 因此，可藉由檢測超過容許值Ha的頭8的高度位移量 ，判定柱狀凸塊3的銲料5與電極7的接合面7b的對準是否 被良好地進行。 此外，設定荷重P2為測定在預先將銲料5加熱到預熱 溫度T1而軟化的狀態下不會壓壞的荷重並使其記憶於控 制部20，在實際的程序中使用。因此，銲料5不會耐不住 荷重P2而被壓壞。 其次，將頭8的驅動控制由根據測力器1 0的檢測荷重 進行的荷重控制切換成根據高度檢測手段之編碼器19的 檢測位置進行的位置控制。據此，柱狀凸塊3與電極7的 間隔被保持一定而被進行位置控制。其次，將加熱器16 的設定溫度變更為T2。在溫度T2下，柱狀凸塊3的頂端部 的銲料5到達銲料熔融溫度（例如240~280°C)。 其次，在經過規定時間tm3後，更進一步將頭8下降 至基板6側僅壓入量Hb，將柱狀凸塊3壓入電極7(步驟 ST08)。壓入是在圖4的時序15被進行。藉由柱狀凸塊3 被壓入電極7，產生反作用力。反作用力是在壓入完了時 (圖4的時序16)藉由測力器1 0進行測定，當作頭8的檢測 荷重P3 (步驟ST09)。檢測荷重P3的測定對應本發明的 第一反作用力測定程序。 其次，在經過規定時間tm4後，藉由測力器1 0測定 10014790(^單編號 A〇101 第16頁/共27頁 1013045307-0 201233486A cylindrical bump 3 is formed with the welding lion. The electrode 6 is disposed on the substrate 6 and the surface is subjected to _ (S. such as plating) 7a. The Wuchuan is filled with a non-conductive thermosetting resin (__ conductive therm〇 setting resin) around the 7-electrode pole 7 of the substrate 6 pole. The electrode 7 is provided with a flat joint surface 7b joined to the stud bumps 3. The shape of the column 4 made of CU is a cylindrical shape. Further, the column 4 is not limited to a columnar shape, and may be a polygonal column or a conical column. If the column is formed with solder 5 in the top of the column. For example, the shape of the image can be used. The mounting method of mounting the wafer 2 on the substrate 6 by using the mounting device 1 will be described using the flowchart of Fig. 3 and the diagram for explaining the mounting state of Fig. 4. Fig. 4 is a view showing the height in the direction of the longitudinal sleeve of the longitudinal sleeve and the detection load of the dynamometer 1 在 at the time of the horizontal axis mark. First, the wafer 2 is held and held by the tool 9 of the head 8, and the state in which the head 8 is lowered to the predetermined height (search height) of the substrate 6 is started in a state where the substrate 6 is adsorbed and held by the substrate stage 11. The alignment mark of the wafer 2 and the alignment mark of the substrate 6 are image-received in advance through the two-view camera, and the substrate platform lm is aligned in the χ, γ, and 0 directions based on the image identification data. Moreover, the heater 16 of the tool 9 is warmed up to the preheating temperature η. At the preheating temperature T1T 'the solder is softened from the solid state to the secret state (example 1001479# single number A 〇 101 page 13 / total 27 pages 1013045307-0 201233486 编石马如160 °C, etc.). The drive control of the head 8 is controlled by the position of the feeding motor 14 in accordance with the detection position of the height detecting means (19) (m. ST00). On the eve of the second, the head 8 is lowered by a predetermined height at a low speed. The adhesive 17 around the side row 7 is lowered by the columnar bumps 3. This state becomes the timing of tO of Fig. 4 . The state in which the stud bump 3 approaches the vicinity of the electric core 7 is obtained. The head 8 is gradually lowered, and a search operation for detecting the timing at which the solder 5 of the terminating portion of the stud bump 3 contacts the electrode 7 is performed (step st〇i). Next, the load P1 is detected by the load cell 1 (step ST〇2). The load P1 is used as the search load. The timing t1 of FIG. 4 is a timing at which the solder 5 of the stud bump 3 contacts the electrode 7. The drive control of the head 8 is switched to the load control according to the detected load of the load cell 10. The solder 5 of the stud bump 3 contacts the electrode 7, and the temperature of the tool 9 warmed to the preheating temperature T1 is conducted to the substrate 6 side. Further, if the wafer 2 is pressed against the substrate 6 by the search load P1, the adhesive 7 which is previously filled to the substrate 6 is extruded by the portion where the stud bump 3 contacts the electrode 7. This process is carried out because the adhesive port remains between the stud bump 3 and the electrode 7, and the subsequent process becomes a poor condition. Next, the search load P1 is maintained for a predetermined time tml (step ST03). The wafer 2 is provided with a plurality of columnar bumps 3 degrees which are subtly different from each of the upper bumps 3 of the respective bumps 3 by the maintenance of the search load P1. Tml, r (four) columnar money _ pole 7 connection (10) grounding. ,: encoding of the w degree detection means of the Bay 8 H19 measuring head 8 == and remembering. _ part 2 〇 (step _. The measurement is: the timing t2 of Fig. 4 is performed. The high sound is in the face 9# 赖面*i4i The measurement of the total value corresponds to the height measurement program of the 1013045307 to 201233486 of the present invention. Next, the setting load of the head 8 is changed to P2 (step ST05). In the warm-up state (for example, a state of about 160 ° C), the measurement is performed. The solder 5 at the tip end of the stud bump 3 is not melted. The solder 5 is softened in the stage of moving from the solid phase state to the liquid phase state. Therefore, the load is controlled by the head 8 at the set load P 2 . The softened material 5 is pressed into the electrode 7 to deform the shape. Next, the head 8 is controlled by the set load P2 for the following time: the predetermined time tm2 of the timing t3 to t4 of Fig. 4. Next, by the height of the head 8. The encoder 19 of the detecting means measures the height position H2 of the head 8 and stores it in the control unit 20 (step ST06). The measurement of the height position H2 corresponds to the second height setting program of the present invention. The setting by the load control of the head 8 The load P1 is changed to P2, so that the columnar bump 3 is pressed into the electrode 7. At this time, when the column When the position of the joint surface 7b of the bump 3 and the electrode 7 is shifted, the height displacement amount (H1 - H2) of the head 8 measured by the step ST04 and the step ST08 exceeds the allowable value Ha which is set in advance. Therefore, after the load control time tm2 is performed with the set load P2, it is determined whether or not the height displacement amount (ΙΠ-Η2) of the head 8 is within the range of the allowable value Ha (step ST07). The determination is made at the timing t4 of Fig. 4 The height displacement amount (H1-H2) of the head 8 corresponds to the change in the gap between the wafer 2 and the substrate 6, and the determination as to whether or not the allowable value Ha is within the range of the solder bump and the electrode before the melting of the present invention is determined. When the height displacement amount (ΙΠ-Η2) of the head 8 exceeding the allowable value Ha is detected, the position of the solder 5 and the electrode 7 in the substrate 6 during operation is shifted. The control unit 20 (step ST07NG). The allowable value Ha is the 1001479# single-number hall 01 which is to align the solder 5 of the stud bump 3 to the electrode 7. Page 15 / Total 27 pages 1013045307-0 201233486 Joint surface 7b The situation near the center is set as the reference. When the solder 5 is in contact with the joint surface 7b When a part of the contact electrode 7 is in contact with the end portion of the contact electrode 7, if the wafer 2 is pressed against the wafer 2 for a predetermined time tm2, the reaction force from the electrode 7 is insufficient, so that the wafer 2 sinks into the substrate 6 with the amount of pressing. Therefore, by detecting the amount of displacement of the head 8 exceeding the allowable value Ha, it is determined whether or not the alignment of the bonding surface 7b of the stud bump 3 with the electrode 7 is favorably performed. Further, the load P2 is set. In order to measure the load which is not crushed in a state where the solder 5 is heated to the preheating temperature T1 in advance and is softened, it is stored in the control unit 20, and is used in an actual program. Therefore, the solder 5 cannot be crushed by the load P2. Next, the drive control of the head 8 is switched by the load control by the detection load of the load cell 10 to the position control by the detection position of the encoder 19 of the height detecting means. According to this, the interval between the stud bumps 3 and the electrodes 7 is kept constant and positional control is performed. Next, the set temperature of the heater 16 is changed to T2. At the temperature T2, the solder 5 at the tip end portion of the stud bump 3 reaches the solder melting temperature (e.g., 240 to 280 ° C). Then, after the lapse of the predetermined time tm3, the head 8 is further lowered to the substrate 6 side by the amount of pressing Hb, and the stud bump 3 is pressed into the electrode 7 (step ST08). The press-in is performed at timing 15 of FIG. The columnar bump 3 is pressed into the electrode 7, and a reaction force is generated. The reaction force is measured by the load cell 10 when the press-fitting is completed (timing 16 of Fig. 4), and is regarded as the detection load P3 of the head 8 (step ST09). The measurement of the detection load P3 corresponds to the first reaction force measurement procedure of the present invention. Secondly, after the lapse of the specified time tm4, the force measuring device 10 is used to measure 10014790 (^ single number A 〇 101 page 16 / total 27 pages 1013045307-0 201233486

頭8的檢測荷重P4。檢測荷重p4的敎是在獅荷重變 動發生且穩定了的階段（請時序⑺，於銲獅融了 的階段中被進行（步驟ST1G)。檢測荷_的測定對應本 發明的第二反作用力測定程序。頭8因被進行位置控制， 便維持壓入量Hb，故藉由柱狀凸塊3被磨人電極7而產 生的反作用力（檢測荷重P3)會伴隨辉料5的炫融而降低。 因鲜料5在溫度T2下被加熱，故銲料5到達炼融溫度。而 且’被填充於晶片2與基板6之間的接著劑17硬化。 當柱狀凸塊3與電極7的對準被精度佳地進行時，藉 由溶融了的銲料5與電極7產生的反作用力（檢測荷重⑷ 維持規定的值。但是，當柱狀凸塊3與電極7的對準產生 偏差時’因來自電極7的反作用力不作用於柱狀凸塊3, 故檢測荷重Ρ4比神被精度佳地進行的情形還低。根據 該特性’由檢測荷重Ρ3與檢測荷重⑽定其差⑻—⑷ 是否在預先被設定的容許值肋的範圍内（步驟ST⑴。若 P3-P4為容許值Hb的範圍内，則判定為柱狀凸塊3與電極 7的對準被精度钱騎，若為範圍外，㈣定為柱狀凸 塊3與電極7的對準產生偏差。該好壞判定是對應本發明 之判定溶融了的柱狀凸塊3與電極7的對準的好壞之反作 用力判定程序。當超過容許值肋時，將柱狀凸塊3與電極 7的位置偏移不良記憶於控制部2〇(步驟STUNG)。 其次，將加熱器160FF(關閉），解除利用工具9進行 的晶片2的吸附保持，使頭8上升，結束晶片2之安裝於基 板6(步驟ST12)。 針對反作用力判定程序，使用圖5詳細說明晶片2的 銲料5與基板6的電極7的狀態。顯示在由步驟^〇1到步驟 10014790(P編Ε Α〇1ί)1 第 Π 頁 / 共 27 頁 1013045307-0 201233486 ST10的程序中，晶片2與基板6的位置關係於圖5。顯示晶 片2的柱狀凸塊3接觸了電極7的狀態（步驟ST02)於圖 5(a)。設該狀態的晶片2的背面2b與基板6的距離為hO。 檢測荷重為P1，頭8的高度H1被保持。 顯不晶片2的柱狀凸塊3被以規定的何重（柱4與電極 7不接觸的荷重）緊壓於電極7的狀態（步驟ST06)於圖 5(b)。設該狀態的晶片2的背面2b與基板6的距離為hi。 檢測荷重為P2，頭8的高度H2被保持。 顯示晶片2的柱狀凸塊3被壓入電極僅規定的壓入量 Hb(步驟ST09)，銲料5到達熔融溫度的狀態（步驟ST10) 於圖5(c)。在該狀態下，銲料5與電極7的對準被精度佳 地進行。因此，藉由銲料5與電極7產生的反作用力即使 是銲料熔融狀態也維持規定值。 另一方面，顯示銲料5與電極7的對準產生偏差的情 形於圖5(d)。因熔融了的銲料5與電極7的位置偏移，故 來自電極7的反作用力不傳達至銲料5。因此，檢測荷重 P4比精度佳地被對準的狀態還低。 具體上，晶片2與基板6的每一生產批量 (production lot)，對壓入量Hb之檢測荷重P3及P4的 值被預先記憶於控制部20。而且，針對發生位置偏移的 情形的檢測荷重P4，設定值也被記憶於控制部20。根據 該等資料，在每次晶片2與基板6的接合比較檢測荷重P3 、P4，進行接合的好壞判斷。 【圖式簡單說明】 [0006] 圖1是與本發明有關的安裝裝置之概略側視圖。 圖2是顯示晶片與基板的關係之概略側視圖。 10014790(^^^^ A〇101 第18頁/共27頁 1013045307-0 201233486 圖3是說明與本發明有關的安裝方法之流程圖。 圖4是顯示Z軸頭高度與檢測荷重之圖表。 圖5是顯示晶片與基板的狀態之侧視圖與檢測荷重、 Z軸頭高度的關係之圖。 【主要元件符號說明】 [0007] 1:安裝裝置 2 :晶片 2b:晶片背面 3:柱狀凸塊 J 4:柱 5:銲料 6 :基板 7 :電極 7a:鍍銲料 7b:接合面 8 :頭 9:工具 Μ 1 (h測力器 11:基板平台 13:2視野攝影機 14 :伺服馬達 15 :滚珠螺桿 16 :加熱器 17:接著劑 18:熱電偶 19 :編瑪 1013045307-0 10014790(^單編號A〇101 第19頁/共27頁 201233486 2 0 :控制部 HI、Η2:頭8的高度位置The head 8 detects the load P4. The detection of the load p4 is performed at a stage where the lion load variation occurs and is stabilized (please sequence (7), which is performed in the stage where the welding lion is melted (step ST1G). The measurement of the detection load _ corresponds to the measurement of the second reaction force of the present invention. Since the head 8 is position-controlled, the pressing amount Hb is maintained, so that the reaction force (detection load P3) generated by the columnar bump 3 being grounded by the electrode 7 is lowered by the fusion of the glow material 5. Since the fresh material 5 is heated at the temperature T2, the solder 5 reaches the melting temperature, and 'the adhesive 17 filled between the wafer 2 and the substrate 6 is hardened. When the columnar bump 3 is aligned with the electrode 7. When the precision is excellent, the reaction force generated by the molten solder 5 and the electrode 7 (the detection load (4) maintains a predetermined value. However, when the alignment between the columnar bump 3 and the electrode 7 is deviated, 'from The reaction force of the electrode 7 does not act on the stud bump 3, so the detection load Ρ4 is lower than the case where the god is accurately performed. According to this characteristic, the difference between the detection load Ρ3 and the detection load (10) is (8)-(4) Within the range of the allowable value ribs set in advance (step S T(1). If P3-P4 is within the range of the allowable value Hb, it is determined that the alignment of the stud bump 3 and the electrode 7 is accurately carried, and if it is outside the range, (4) is determined as the stud bump 3 and the electrode 7. The alignment is caused by a deviation. The good or bad determination is a reaction force determination procedure corresponding to the determination of the alignment of the molten columnar bump 3 and the electrode 7 of the present invention. When the allowable value rib is exceeded, the columnar bump is used. The positional deviation between the electrode 3 and the electrode 7 is stored in the control unit 2 (step STUNG). Next, the heater 160FF (closed) is released from the suction and holding of the wafer 2 by the tool 9, and the head 8 is raised to end the wafer 2. Mounted on the substrate 6 (step ST12). The state of the solder 5 of the wafer 2 and the electrode 7 of the substrate 6 will be described in detail with reference to Fig. 5 for the reaction force determination program. The display is performed from step 〇1 to step 10014790 (P-edit Α 〇1ί)1 Π page / Total 27 pages 1013045307-0 201233486 In the program of ST10, the positional relationship between the wafer 2 and the substrate 6 is shown in Fig. 5. The state in which the columnar bump 3 of the wafer 2 contacts the electrode 7 is displayed (step ST02) 5(a), the distance between the back surface 2b of the wafer 2 in this state and the substrate 6 is hO. The load is measured as P1, and the height H1 of the head 8 is maintained. The columnar bump 3 of the wafer 2 is pressed against the state of the electrode 7 at a predetermined weight (the load at which the column 4 and the electrode 7 are not in contact) (step ST06) Fig. 5(b) shows that the distance between the back surface 2b of the wafer 2 and the substrate 6 in this state is hi. The detection load is P2, and the height H2 of the head 8 is held. The columnar bump 3 of the display wafer 2 is pressed in. The electrode is only a predetermined amount of pressing Hb (step ST09), and the state where the solder 5 reaches the melting temperature (step ST10) is shown in Fig. 5(c). In this state, the alignment of the solder 5 with the electrode 7 is performed with high precision. Therefore, the reaction force generated by the solder 5 and the electrode 7 maintains a predetermined value even in the molten state of the solder. On the other hand, the case where the alignment of the solder 5 and the electrode 7 is deviated is shown in Fig. 5(d). Since the position of the molten solder 5 and the electrode 7 is shifted, the reaction force from the electrode 7 is not transmitted to the solder 5. Therefore, the detection load P4 is lower than the state in which the accuracy is accurately aligned. Specifically, the value of the detection load P3 and P4 for the press-in amount Hb is previously stored in the control unit 20 for each production lot of the wafer 2 and the substrate 6. Further, the set value is also stored in the control unit 20 for the detection load P4 in the case where the positional shift occurs. Based on the data, the load P3 and P4 are detected and compared with each other at the bonding of the wafer 2 and the substrate 6, and the quality of the bonding is judged. BRIEF DESCRIPTION OF THE DRAWINGS [0006] Fig. 1 is a schematic side view of a mounting device relating to the present invention. 2 is a schematic side view showing the relationship between a wafer and a substrate. 10014790(^^^^ A〇101 Page 18/27 page 1013045307-0 201233486 Figure 3 is a flow chart illustrating the mounting method related to the present invention. Figure 4 is a graph showing the height of the Z-axis head and the detected load. 5 is a view showing a relationship between a side view of the state of the wafer and the substrate, a detection load, and a height of the Z-axis head. [Description of Main Element Symbols] [0007] 1: Mounting Device 2: Wafer 2b: Wafer Back 3: Columnar Bump J 4: Column 5: Solder 6: Substrate 7: Electrode 7a: Solder plating 7b: Joint surface 8: Head 9: Tool Μ 1 (h dynamometer 11: Substrate platform 13: 2 Vision camera 14: Servo motor 15: Ball Screw 16: Heater 17: Adhesive 18: Thermocouple 19: Ma 1013045307-0 10014790 (^单单号 A〇101 Page 19 of 27201233486 2 0: Control section HI, Η2: height position of head 8

Ha:容許值Ha: Allowable value

Hb :壓入量 P :設定荷重 P1 :搜尋荷重 P 3、P 4 :檢測荷重 t0-t7 :時序 tml -tm4 :規定時間 T1 :預熱溫度 T2:銲料熔融溫度 HKH479#單編號删1 第20頁/共27頁 1013045307-0Hb: press-in amount P: set load P1: search load P3, P4: detection load t0-t7: timing tml - tm4: predetermined time T1: preheating temperature T2: solder melting temperature HKH479# single number deletion 1 20th Page / Total 27 pages 1013045307-0

Claims (1)

201233486 七、申請專利範圍： 1 . 一種安裝方法，一邊將配設於晶片的柱狀凸塊緊壓於配設 於基板的電極，一邊加熱並熱壓接合於配設於基板的電極 ，包含： 以熱壓接合工具保持晶片並使其下降至基板側之程 序； 在晶片的柱狀凸塊接觸基板的電極後* 使保持晶片的熱壓接合工具的溫度升溫至銲料熔融 溫度之程序； 將晶片壓入基板側僅預先被設定的壓入量，測定壓 入完了時的來自基板的電極的反作用力之第一反作用力測 定程序；以及 測定配設於柱狀凸塊的銲料熔融時的來自基板的電 極的反作用力之第二反作用力測定程序， 由該第一反作用力測定程序的測定結果與該第二反 作用力測定程序的測定結果，判定熔融了的柱狀凸塊與電 極的對準的好壞之反作用力判定程序。 2.如申請專利範圍第1項之安裝方法，包含： 在晶片的柱狀凸塊接觸基板的電極後， 測定保持晶片的熱壓接合工具的升降位置之第一高 度測定程序； 以預先被設定的壓力，將晶片緊壓於基板侧預先被 設定的時間後， 測定保持晶片的熱壓接合工具的升降位置之第二高 度測定程序；以及 10014790(P 編號紐01 第21頁/共27頁 1013045307-0 201233486 由該第一高度測定程序的測定結果與該第二高度測 定程序的測定結果，求因緊壓晶片造成的晶片與基板的間 隔的變化，判定銲料熔融前的柱狀凸塊與電極的對準的好 壞之沉入量判定程序。 3 . —種安裝裝置，包含： 保持配設有柱狀凸塊的晶片之熱壓接合工具； 保持具有接合有晶片的柱狀凸塊的電極的基板之基 板平台； 使保持晶片的熱壓接合工具升降於保持基板的基板 平台侧之驅動手段； 檢測保持晶片的熱壓接合工具的升降位置之高度檢 測手段； 檢測保持晶片的熱壓接合工具緊壓基板時的緊壓力 之荷重檢測手段； 使熱壓接合工具的溫度升溫之加熱器；以及 以該南度檢測手段測定晶片南度位置貧訊’以該何 重檢測手段測定給予晶片的緊壓力，控制該驅動手段與該 加熱器之控制手段， 該控制手段具有： 使該加熱器升溫至銲料熔融溫度，由驅動該驅動手 段將熱壓接合工具壓入基板側僅預先被設定的壓入量時的 以該荷重檢測手段測定的檢測荷重，與配設於柱狀凸塊的 銲料溶融時的檢測荷重，判定溶融了的柱狀凸塊與電極的 對準的好壞的功能。 4 .如申請專利範圍第3項之安裝裝置，其中該控制手段具有： 在晶片的柱狀凸塊接觸基板的電極後1 HKH479#單編號紐01 第22頁/共27頁 1013045307-0 201233486 以預先被設定的壓力，將晶片緊壓於基板側預先被 設定的時間，由因緊壓造成的晶片與基板的間隔的變化判 定熔融前的柱狀凸塊與電極的對準的好壞的功能。201233486 VII. Patent Application Range: 1. A mounting method in which a columnar bump disposed on a wafer is pressed against an electrode disposed on a substrate, and heated and thermocompression bonded to an electrode disposed on the substrate, comprising: a procedure of holding the wafer by the thermocompression bonding tool and lowering it to the substrate side; after the columnar bumps of the wafer contact the electrodes of the substrate * a procedure for raising the temperature of the thermocompression bonding tool holding the wafer to the solder melting temperature; a first reaction force measurement program for measuring the reaction force of the electrode from the substrate when the press-fit is completed, and a measurement of the reaction force from the substrate when the solder is disposed in the columnar bump The second reaction force measurement program of the reaction force of the electrode determines the alignment of the molten columnar bump and the electrode by the measurement result of the first reaction force measurement program and the measurement result of the second reaction force measurement program Good or bad reaction force determination procedure. 2. The mounting method of claim 1, comprising: determining, after the columnar bump of the wafer contacts the electrode of the substrate, a first height measuring program for maintaining a lifting position of the thermocompression bonding tool of the wafer; Pressure, after the wafer is pressed against the substrate side for a predetermined time, the second height measurement program for maintaining the lifting position of the thermocompression bonding tool of the wafer is determined; and 10014790 (P number New 01 page 21 / 27 pages 1013045307) -0 201233486 From the measurement result of the first height measurement program and the measurement result of the second height measurement program, the change in the interval between the wafer and the substrate due to the pressing of the wafer is determined, and the columnar bump and the electrode before the solder melting are determined. Alignment of the quality of the sinking determination program. 3. A mounting device comprising: a thermocompression bonding tool that holds a wafer provided with stud bumps; and an electrode that holds the stud bumps to which the wafer is bonded Substrate platform of the substrate; driving means for holding the thermocompression bonding tool for holding the wafer up and down on the substrate platform side of the holding substrate; detecting and maintaining the heat of the wafer a height detecting means for raising and lowering a pressing position of the bonding tool; a load detecting means for detecting a pressing force when the hot pressing bonding tool holding the wafer is pressed against the substrate; a heater for heating the temperature of the thermocompression bonding tool; and the south detecting means Measuring the south position of the wafer, detecting the pressing pressure applied to the wafer by the weight detecting means, controlling the driving means and the controlling means of the heater, the controlling means having: heating the heater to a solder melting temperature, and driving The driving means presses the thermocompression bonding tool to the detection load measured by the load detecting means when the amount of pressing of the substrate side is only set in advance, and the detection load when the solder disposed in the columnar bump is melted, and determines the melting The function of the alignment of the columnar bumps with the electrodes is as follows: 4. The mounting device of claim 3, wherein the control means has: after the columnar bumps of the wafer contact the electrodes of the substrate 1 HKH479 #单编号纽01 Page 22 of 27 1013045307-0 201233486 The wafer is pressed in advance on the substrate side with a preset pressure. For a predetermined period of time, the change in the interval between the wafer and the substrate due to the pressing is used to determine the alignment of the columnar bumps before the melting. 醒棚产單編號腦01 第23頁/共27頁 1013045307-0醒棚单单号脑01 Page 23 of 27 1013045307-0
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