TW201232563A - Conductive paste, conductive film-attached base material using the conductive paste, and method for manufacturing conductive film-attached base material - Google Patents

Conductive paste, conductive film-attached base material using the conductive paste, and method for manufacturing conductive film-attached base material Download PDF

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TW201232563A
TW201232563A TW100145629A TW100145629A TW201232563A TW 201232563 A TW201232563 A TW 201232563A TW 100145629 A TW100145629 A TW 100145629A TW 100145629 A TW100145629 A TW 100145629A TW 201232563 A TW201232563 A TW 201232563A
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Taiwan
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copper
particles
acid
conductive paste
copper particles
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TW100145629A
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Chinese (zh)
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Kumiko Suwa
Hideyuki Hirakoso
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Asahi Glass Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/16Metallic particles coated with a non-metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • H05K1/095Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)
  • Powder Metallurgy (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Paints Or Removers (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

Provided is a conductive paste, with which a conductive film that suppresses formation of an oxide film and can maintain a low volume resistivity for a long period of time can be formed. The conductive paste contains: copper particles (A) having a surface oxygen concentration ratio (O/Cu) of 0.5 or less, said surface oxygen concentration ratio being obtained by means of X-ray photoelectron spectroscopy; a chelating agent (B), which is composed of a compound having a stability constant (logKcu) of 5-15 with copper ions at 25 DEG C and an ion strength of 0.1 mol/L; and a thermosetting resin (C).

Description

201232563 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種導電糊及使用其之附導電膜基材、以 及附導電膜基材之製造方法,尤其是關於一種金屬成分之 氧化得到抑制之導電糊及使用其之附導電膜基材、以及附 導電膜基材之製造方法。 丨【先前技術】 先前,已知於電子零件或印刷配線板(印刷基板)等之配 線導體之形成中使用導電糊之方法。其中,例如印刷基板 之製造係以如下方式進行:於包含玻璃、陶瓷等之絕緣性 基板上,將導電糊塗佈成所需之圖案形狀並加以焙燒,從 而形成配線圖案。 作為導電糊,就確保高導電性之觀點而言,主要使用以 銀(Ag)作為主成分之銀糊。然而,銀糊若於高溫高濕之環 境下通電’則容易產生銀原子發生離子化,被電場吸引而 移動之離子遷移(銀之電沈積)。若於配線圖案中產生離子 遷移,則有發生配線間產生短路等不良情形,而妨礙配線 基板之可靠性之虞。 就提高電子設備或配線基板之可靠性之觀點而言,提出 有使用銅糊代替銀糊作為導電糊之技術。由於銅糊難以產 生遷移現象,故可提高電子電路之連接可靠性。 …、而通卷銅合易氧化,故若於高濕度之環境下放置於 域中,貝,1由於與大氣中之水分或氧等之反應而容易產生 氡化銅目此,培燒銅糊而形成之導電膜存在因氧化覆膜 160003.doc: 201232563 之影響而體積電阻率容易變高之問題。 為解決此種問題,採用利用濕式還原法來製造調配於銅 糊中之銅粉末之技術。例如於專利文獻丨中,揭示有使用 同時含有酸、還原劑、及碳數8以上之脂肪酸之鹼金屬鹽 的水溶液,來處理包含鋼或銅合金之導電粉的導電粉之表 面處理方法。 又,於專利文獻2中,揭示有與銅粉末、及塗料用黏合 劑樹脂一併含有抗氧化劑而成之銅系導電性塗料組合物。 並且,揭示有使用水揚酸及其衍生物、或苯并三唑羧酸酿 肼之至少一種作為該抗氧化劑。 然而,實際情況為即便藉由上述引用文獻之技術,仍無 法充分改善配線導體用之導電糊中由氧化覆膜之形成引起 之體積電阻率之上升問題。 [先前技術文獻] [專利文獻] [專利文獻1]曰本專利特開2007-1 84143號公報 [專利文獻2]曰本專利特開平丨_丨58〇8丨號公報 【發明内容】 [發明所欲解決之問題] 本發明係為解決上述課題而完成者。即,本發明之目的 在於提供一種能夠形成可抑制氧化覆膜之形成而可長時間 維持較低之體積電阻率之導電膜的導電糊。又,本發明^ 目的在於提供一種包含使用上述導電糊之導電膜之附導電 膜基板。 % 160003.doc 201232563 [解決問題之技術手段] 即’本發明之導電糊之特徵在於含有:銅粒子(A),其 藉由X射線光電子光譜法而求得之表面氧濃度比〇/(:11為〇 5 以T ;螯合劑(B),其包含於25。(:、離子強度〇·ι m〇l/L下 與銅離子之穩定度常數l〇gKCu為5〜15之化合物;及熱硬化 性樹脂(C)。 再者’以下亦將於25。(:、離子強度oj mol/L下與銅離子 之穩定度常數logKCu僅表示為「與銅離子之穩定度數 logKCuJ° 於上述導電糊中,上述銅粒子(A)較佳為KpH值為3以下 之为政’丨質中經還原處理之表面改質銅粒子。又,上述銅 粒子(A)亦可為複合金屬銅粒子,其係加熱包含平均一次 粒徑為0.3〜20 μηι之金屬銅粒子、及凝聚附著於上述金屬 銅粒子表面之平均一次粒徑為丨〜2 〇 n m之氫化銅微粒子的 銅複合粒子,將上述氫化銅微粒子轉換為金屬鋼微粒子而 形成。 作為上述分散介質之pH值調整劑,較佳為使用選自曱 酸、檸檬酸、順丁烯二酸、丙二酸、乙酸、丙酸、硫酸、 硝酸、鹽酸中之至少一種。又,作為用於形成上述氫化銅 微粒子之水溶性銅化合物溶液之pH值調整劑,較佳為使用 選自曱酸、檸檬酸、順丁烯二酸、丙二酸、乙酸、丙酸、 硫酸、硝酸、鹽酸中之至少一種。 上述螯合劑(B)較佳為將含有氮原 子之官能基(a)、與含 有氮原子以外之具有孤立電子對之原子的官能基(b)配置於 160003.doc 201232563 ==之鄰MW合物’且上述氮原子及上述氣原 ΓΓ具有孤立電子對之原子介隔二或三個原子而鍵 二二上述含有氮原子以外之具有孤立電子對之原子的 二 為㈣或幾基。又,上述氮原子及上述氣原 以外之具有孤立電子對之原子較佳為介隔二或三個碳原 t而鍵結。又,上述聲合劑⑻較佳為選自水揚㈣酸、 水揚醛#、鄰胺基苯酚、水揚酸之化合物。 上述熱硬化性樹脂(C)較佳為選自紛樹脂、鄰苯二甲酸 二烯丙㈣脂、不飽和醇酸樹脂、環氧樹脂、㈣樹脂、 雙順丁婦二酿亞胺三,井樹脂、聚石夕氧樹脂、丙稀酸系樹 脂、三聚氰胺樹脂、及尿素樹脂中之至少—種樹脂。 上述導電糊較佳為相對於上述銅粒子00質量份,上 述整合劑(B)之量為ΜΗ,量份。又,上述導電糊較佳為 相對於上述鋼粒子⑷100質量份,上述熱硬化性樹脂(c) 之量為5〜50質量份。 本發明之附導電膜基材之特徵在於:其係將使上述本發 明之導電糊硬化而形成之導電膜設於基材上而成。於上述附 導電膜基材中,上述導電膜之體積電阻率較佳為】.㈢〇-4 Qcm以下。 本發明之附導電膜基材之製造方法的特徵在於:將上述 本發明之導電糊塗佈於基材上後,使該導電糊硬化而形成 導電膜。 [發明之效果] 根據本發明,可製成即便於高濕度之環境下,亦能夠形 160003.doc 201232563 成可抑制氧化銅之形成,而可長時間維持較低體積電阻率 之I電膜的導電糊。又,根據本發明,可藉由使用此種導 電糊,而製成作為配線基板等之可靠性較高,且由形成氧 化覆膜引起之體積變動率之上升得到抑制的附導電膜基 板。 【實施方式】 以下’對本發明進行詳細說明。201232563 6. Technical Field of the Invention The present invention relates to a conductive paste, a conductive film substrate using the same, and a method for manufacturing a conductive film substrate, in particular, the oxidation of a metal component is suppressed. A conductive paste, a conductive film substrate using the same, and a method of producing a conductive film substrate. [Prior Art] Conventionally, a method of using a conductive paste in the formation of a wiring conductor such as an electronic component or a printed wiring board (printed substrate) has been known. Here, for example, the printing substrate is produced by applying a conductive paste to a desired pattern shape on an insulating substrate containing glass, ceramics or the like and baking it to form a wiring pattern. As the conductive paste, a silver paste containing silver (Ag) as a main component is mainly used from the viewpoint of ensuring high conductivity. However, if the silver paste is energized in a high-temperature and high-humidity environment, it is easy to cause ionization of silver atoms and migration of ions by the electric field (electrodeposition of silver). When ion migration occurs in the wiring pattern, there is a problem that a short circuit occurs between the wirings, which hinders the reliability of the wiring substrate. From the viewpoint of improving the reliability of an electronic device or a wiring board, a technique of using a copper paste instead of a silver paste as a conductive paste has been proposed. Since the copper paste is difficult to cause migration, the connection reliability of the electronic circuit can be improved. ..., and the copper is easy to oxidize, so if it is placed in the high humidity environment, it is easy to produce copper telluride due to the reaction with water or oxygen in the atmosphere. The formed conductive film has a problem that the volume resistivity tends to become high due to the influence of the oxide film 160003.doc: 201232563. In order to solve such a problem, a technique of producing a copper powder formulated in a copper paste by a wet reduction method is employed. For example, in the patent document, a surface treatment method for treating a conductive powder containing a conductive powder of steel or a copper alloy using an aqueous solution containing an acid, a reducing agent, and an alkali metal salt of a fatty acid having 8 or more carbon atoms is disclosed. Further, Patent Document 2 discloses a copper-based conductive coating composition in which an antioxidant is contained together with a copper powder and a binder resin for a coating material. Further, it is disclosed that at least one of salicylic acid and a derivative thereof or benzotriazole carboxylic acid is used as the antioxidant. However, the actual situation is that even with the technique of the above cited documents, the problem of an increase in the volume resistivity caused by the formation of the oxide film in the conductive paste for wiring conductors cannot be sufficiently improved. [Prior Art] [Patent Document 1] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-1 84143 [Patent Document 2] Japanese Patent Laid-Open Publication No. 〇58〇8丨 No. [Invention] [Invention Problem to be Solved The present invention has been made to solve the above problems. That is, an object of the present invention is to provide a conductive paste capable of forming a conductive film capable of suppressing formation of an oxide film and maintaining a low volume resistivity for a long period of time. Further, the present invention has been made in an effort to provide a conductive film substrate comprising a conductive film using the above conductive paste. [Technical means for solving the problem] That is, the conductive paste of the present invention is characterized by containing copper particles (A) whose surface oxygen concentration ratio 〇/(: is obtained by X-ray photoelectron spectroscopy. 11 is 〇5 to T; chelating agent (B), which is contained in 25. (:, ionic strength 〇·ι m〇l/L and copper ion stability constant l〇gKCu is 5 to 15 compounds; Thermosetting resin (C). In addition, 'the following will also be 25. (:, ionic strength oj mol / L and copper ion stability constant logKCu only expressed as "the stability with copper ions logKCuJ ° above the conductive In the paste, the copper particles (A) are preferably surface-modified copper particles having a KpH of 3 or less in the ruthenium. The copper particles (A) may also be composite metal copper particles. And heating the copper composite particles containing the metal primary copper particles having an average primary particle diameter of 0.3 to 20 μm, and the copper hydride fine particles having an average primary particle diameter of 丨2 to 〇nm adhered to the surface of the metal copper particles, and the hydrogenation is performed. The copper particles are converted into metal steel particles to form. The pH adjusting agent for the dispersion medium is preferably at least one selected from the group consisting of citric acid, citric acid, maleic acid, malonic acid, acetic acid, propionic acid, sulfuric acid, nitric acid, and hydrochloric acid. Preferably, the pH adjusting agent for forming the water-soluble copper compound solution of the copper hydride fine particles is selected from the group consisting of citric acid, citric acid, maleic acid, malonic acid, acetic acid, propionic acid, sulfuric acid, nitric acid, and hydrochloric acid. At least one of the above-mentioned chelating agents (B) is preferably a functional group (a) containing a nitrogen atom and a functional group (b) having an atom having an isolated electron pair other than a nitrogen atom, 160003.doc 201232563 = = adjacent MW compound ' and the above nitrogen atom and the above gas atom ΓΓ have an isolated electron pair of atoms separated by two or three atoms and the bond two or two of the atoms having an isolated electron pair other than the nitrogen atom are (four) or Further, the nitrogen atom and the atom having an isolated electron pair other than the gas atom are preferably bonded by two or three carbon atoms t. Further, the sound bonding agent (8) is preferably selected from the water (four). Acid, water aldehyde aldehyde #, o-amino phenol The thermosetting resin (C) is preferably selected from the group consisting of bismuth resin, diallyl phthalate (tetra) phthalate, unsaturated alkyd resin, epoxy resin, (iv) resin, and biscision The at least one of the resin, the polysulfide resin, the acrylic resin, the melamine resin, and the urea resin. The conductive paste is preferably 00 parts by mass relative to the copper particles. The amount of the conductive paste (B) is preferably 5 parts by weight to 50 parts by mass based on 100 parts by mass of the steel particles (4), and the amount of the thermosetting resin (c) is 5 to 50 parts by mass. The conductive film substrate is characterized in that a conductive film formed by curing the above-described conductive paste of the present invention is provided on a substrate. In the above-mentioned conductive film substrate, the volume resistivity of the conductive film is preferably (3) 〇-4 Qcm or less. The method for producing a conductive film substrate according to the present invention is characterized in that after the conductive paste of the present invention is applied onto a substrate, the conductive paste is cured to form a conductive film. [Effect of the Invention] According to the present invention, it is possible to form an I film which can suppress the formation of copper oxide even in a high humidity environment, and can maintain the formation of a lower volume resistivity for a long period of time. Conductive paste. Further, according to the present invention, it is possible to produce a conductive film substrate which is highly reliable as a wiring board and the like, and which is capable of suppressing an increase in volume change rate due to formation of an oxide film, by using such a conductive paste. [Embodiment] Hereinafter, the present invention will be described in detail.

本發明之導電糊之特徵在於含有:鋼粒子⑷,其藉由X 射線光電子光譜法求得之表面氧濃度比。/⑽^以下; 餐合劑⑻’其包含於饥、離子強度01祕下與銅離 子之穩定度常數1(>知為5〜15之化合物;及熱硬化性樹脂 (C)。 根據本發明,藉由調配在2代、離子強度01 mol/L下盘 銅離子之穩定度常數喊〜為特定範圍内之化合物作為餐 合劑⑻,可降低與大氣中所含之氧#反應之銅離子量。 因此’可製成氧化銅之形成得到抑制之導電糊。由此種導 電糊形成之導電膜中難以形成以氧化銅作為主成分之氧化 覆膜,故可製成即便於高濕度之«下,亦可抑制體積電 阻率之上升之附導電膜基材。 銅粒子⑷係成為導電糊之導電成分者,且藉由X射線光 電子光譜法求得之表面氧濃度比0心為0.5以下。以下, 將藉由X射線光電子光譜法求得之表面氧濃度比〇/Cu僅表 不為「表面氧濃度比O/Cu」。 「·表面氧濃度比0/Cu」係以藉由X射線光電子光譜分析 160003.doc 201232563 所測定的銅粒子之表面氧漢度(原子%)相對於表面銅濃度 (原子。/。)之比而表示。於本說明書中’「表面鋼濃度(原子 。/。)」及「表面氧濃度(原子%)」分別為對自鋼粒子表面朝 中心至約3 nm深度為止之範圍内的粒子表層區域進行乂射 線光電子光譜分析而獲得之測定值。自銅粒子表面朝中心 至約hm深度為止之範圍係藉由對該範圍内之粒子區域進 行各成分之濃度測定,而充分掌握銅粒子之表面狀態之範 圍。 若銅粒子⑷之表面氧濃度比〇/Cu超過〇5,則銅粒子 ⑷表面之氧化銅之存在量過多,於製成導電膜時,存在 粒子間之接觸電阻變大,體積電阻率變高之虞。藉由使用 表面氧濃度比O/Cu為〇.5以下之銅粒子⑷,可降低銅粒子 間之接觸電阻,而可提高製成導電膜時之導電性。銅粒子 (A)之表面氧濃度比〇/Cu較佳為〇 3以下。 、又’銅粒子⑷較佳為粒子整體所含之氧濃度為700 ppm 以下。銅粒子所含之氧濃度例如可利用氧濃度計測定。 作為銅粒子⑷,只要為表面氧濃度比O/Cu為0.5以下 者,則可使用各種銅粒子。鋼粒子⑷可為金屬鋼粒子, 亦可為氫化銅微粒子或加熱氫化銅微粒子而成之金屬銅微 粒子(以下亦稱為銅微粒子)…作為銅粒子⑷,亦可為 將該等金屬銅粒子與銅微粒子複合而成之形式之複合粒 :。作為複合粒子’例如可列舉於金屬銅粒子之表面附著 或結合有銅微粒子之形態者1於複絲子之詳 文再作闡述。 下 160003.doc 201232563 銅粒子⑷之平均粒徑較佳為0.〇1〜2〇μιη 平均粒徑可根據銅粒子( 子(Α)之 内適當調整。若銅位子_工於〇.01〜2〇 _之範圍 八…4銅拉子⑷之平均粒徑為〇_〇1㈣以上,則 子之導電糊之流動特性變得良好。又,若銅粒 子(Α)之平均粒徑為2〇 S ,, 則藉由含有該鋼粒子之導 電糊可容易製作微細配線。 导 灰銅粒子⑷含有金屬銅粒子之情料,其平均粒和(平 ::了徑)較佳為°.3〜2〜。又,於銅粒子⑷僅包;銅 说之情形時,其凝聚粒子之平均粒徑較佳為㈣㈠ μπι ’ 更佳為 〇.02〜〇 4 μηι。 次銅粒子(Α)含有金屬銅粒子之情形時,當其平均粒斤 為一上時’含有該銅粒子之導電: 之_性變得良好。又,於銅粒子(Α)僅包含銅微粒子 之情形時,當其凝聚粒子之平均粒徑為G(n _以上時, 含有該銅粒子之導電糊之流動特性變得良好。 於銅粒子⑷含有金屬銅粒子之情形時,當其平均粒徑 (平均-次粒徑)為20 μιη以下時,藉由含有該銅粒子之導 電糊可容易製作微細配線。又,於銅粒子⑷僅包含鋼微 粒子之情形時,當其凝聚粒子之平均粒徑為丨以下時,‘ 藉由含有該銅粒子之導電糊可容易製作微細配線。 作為表面氧濃度比O/Cu為0.5以下之鋼粒子(Α),例如可 較佳地使用下述銅粒子(Α1)〜(Α5丨。 (Α1)為金屬銅粒子,且其平均一次粒徑為〇 3〜2〇 。 (A2)為銅複合粒子,其包含:金屬鋼粒子,其平均一; 160003.doc 201232563 ^仫為0.3〜2〇 μιη ;及氫化銅微粒子,其附著於上述金屬 球子表面,且其凝聚粒子之平均粒徑為20〜400 nm。 (A3)為氫化銅微粒子’且其凝聚粒子之平均粒徑為 nm〜1 μη^ 〇 一(广4)為複合金屬銅粒子,其包含:金屬銅粒子,其平均 -次粒㉟為〇.3〜2G μηι;及金屬銅微粒子,其係加熱附著 於上述金屬銅粒子表面之氫化銅微粒子而成者,且其凝聚 粒子之平均粒徑為20〜400 nm。 * ⑷)為金屬鋼微粒子,且其凝聚粒子之平均粒徑㈣ nm〜1 μηι。 再者’複合金屬銅粒子(Α4)係將銅複合粒子(A。之氫化 銅微粒子藉由加熱處理轉換為金屬鋼微粒子者。又,金屬 銅微粒子(Α5)係藉由加熱處理轉換氫化銅微粒子(A3 者0 於本說明書中’平均粒徑係按照以下方式求得者。即, =金屬鋼粒子之平均—次粒徑係對自掃描式電子顯微鏡The conductive paste of the present invention is characterized by comprising: steel particles (4) having a surface oxygen concentration ratio determined by X-ray photoelectron spectroscopy. /(10)^以下; The meal mixture (8)' is contained in the hunger, ionic strength 01 secret and copper ion stability constant 1 (> a compound of 5 to 15; and a thermosetting resin (C). According to the present invention By compounding the stability constant of the copper ion in the 2nd generation and the ionic strength of 01 mol/L, the compound in the specific range is used as the meal mixture (8), and the amount of copper ions reacted with the oxygen contained in the atmosphere can be reduced. Therefore, it is possible to form a conductive paste in which the formation of copper oxide is suppressed. It is difficult to form an oxide film containing copper oxide as a main component in the conductive film formed of such a conductive paste, so that it can be made even under high humidity. The conductive film substrate can also be suppressed from increasing in volume resistivity. The copper particles (4) are conductive components of the conductive paste, and the surface oxygen concentration determined by X-ray photoelectron spectroscopy is 0.5 or less. The surface oxygen concentration ratio 〇/Cu obtained by X-ray photoelectron spectroscopy is only expressed as "surface oxygen concentration ratio O/Cu". "· Surface oxygen concentration ratio 0/Cu" is based on X-ray photoelectrons. Spectroscopic analysis of copper particles as determined by 160003.doc 201232563 The surface oxygenity (atomic %) of the sub-surface is expressed by the ratio of the surface copper concentration (atoms. /.). In the present specification, 'the surface steel concentration (atoms.) and the surface oxygen concentration (atomic %) The measured values obtained by X-ray photoelectron spectroscopy of the surface region of the particle from the surface of the steel particle toward the center to a depth of about 3 nm, respectively, range from the surface of the copper particle toward the center to a depth of about hm. By measuring the concentration of each component in the particle region in the range, the surface state of the copper particles is sufficiently grasped. If the surface oxygen concentration of the copper particles (4) exceeds 〇/Cu exceeds 〇5, the surface of the copper particles (4) is oxidized. When the amount of copper is too large, when the conductive film is formed, the contact resistance between the particles becomes large, and the volume resistivity becomes high. By using the copper particles (4) having a surface oxygen concentration ratio of O/Cu of not more than 0.5. The contact resistance between the copper particles can be lowered, and the conductivity at the time of forming the conductive film can be improved. The surface oxygen concentration ratio 〇/Cu of the copper particles (A) is preferably 〇3 or less. Further, the 'copper particles (4) are preferably Contained by the particle as a whole The concentration of the copper particles is not less than 700 ppm. The oxygen concentration of the copper particles can be measured by, for example, an oxygen concentration meter. As the copper particles (4), various copper particles can be used as long as the surface oxygen concentration ratio O/Cu is 0.5 or less. The metal steel particles may be copper hydride fine particles or metal copper microparticles (hereinafter also referred to as copper microparticles) obtained by heating copper hydride microparticles. As the copper particles (4), the metal copper particles may be composited with the copper microparticles. A composite particle of the form: as a composite particle, for example, a form in which copper microparticles are attached or bonded to the surface of a metallic copper particle, and the details of the multifilament are further described below. Next 160003.doc 201232563 Copper particles The average particle diameter of (4) is preferably 0. 〇1 to 2 〇μιη The average particle diameter can be appropriately adjusted according to the copper particles (sub-(Α)). If the copper seat is in the range of 〇.01~2〇 _ 八...4 The average diameter of the copper (4) is 〇_〇1 (four) or more, the flow characteristics of the conductive paste become good. Further, when the average particle diameter of the copper particles (Α) is 2 〇 S, the fine wiring can be easily produced by the conductive paste containing the steel particles. The gray copper particles (4) contain metallic copper particles, and the average particle size (pound:: diameter) is preferably 0.33 to 2~. Further, in the case where the copper particles (4) are only included; in the case of copper, the average particle diameter of the aggregated particles is preferably (iv) (i) μπι ‘ more preferably 〇.02 〇 4 μηι. When the secondary copper particles (Α) contain metallic copper particles, when the average particle size is one, the conductivity of the copper particles is good. Further, when the copper particles (Α) contain only copper fine particles, when the average particle diameter of the aggregated particles is G (n _ or more, the flow characteristics of the conductive paste containing the copper particles become good. In the case where the metal copper particles are contained, when the average particle diameter (average-secondary particle diameter) is 20 μm or less, the fine wiring can be easily produced by the conductive paste containing the copper particles. Further, the copper particles (4) contain only steel. In the case of the fine particles, when the average particle diameter of the aggregated particles is 丨 or less, the fine wiring can be easily produced by the conductive paste containing the copper particles. The steel particles having a surface oxygen concentration ratio of O/Cu of 0.5 or less (Α) For example, the following copper particles (Α1) to (Α5丨. (Α1) are metal copper particles, and the average primary particle diameter is 〇3 to 2 〇. (A2) is a copper composite particle. Including: metal steel particles, the average one; 160003.doc 201232563 ^仫 is 0.3~2〇μιη; and copper hydride microparticles attached to the surface of the above metal ball, and the average particle diameter of the agglomerated particles is 20~400 nm (A3) is hydrogenated copper microparticles' and it is agglomerated The average particle diameter of the particles is nm~1 μη^ 〇 (4) is a composite metal copper particle comprising: metallic copper particles, the average-subgranular 35 is 〇.3~2G μηι; and metallic copper microparticles, The hydrogenated copper microparticles adhering to the surface of the metal copper particles are heated, and the aggregated particles have an average particle diameter of 20 to 400 nm. * (4)) is a metal steel microparticle, and the average particle diameter of the agglomerated particles is (4) nm~ 1 μηι. In addition, 'composite metal copper particles (Α4) are copper composite particles (A. The hydrogenated copper microparticles are converted into metal steel particles by heat treatment. Further, the metal copper particles (Α5) are converted by heat treatment) The copper hydride microparticles (A3 0 in the present specification 'average particle diameters are obtained as follows. That is, = metal steel particles average - secondary particle diameter pair self-scanning electron microscope

:^^「SEM」(SeanningEle_nMie_pe))M ㈣«之_個粒子之斐瑞特(F⑽)徑進行Μ,將該 等粒徑進行平均而算出者。 又’包含銅微粒子之凝聚粒子之平均粒徑係 電子顯微鏡(以下記載$「簡」(Transmissi〇nEiectr〇n Μ⑽咖㈣)像中隨機選擇之刚個粒子之斐瑞特⑽⑽ 進行測定,將該等粒徑進行平均而算出者。 二 又,於例如銅複合粒子(A2)般包含金屬銅粒子即銅粒 160003.doc 201232563 子、及附者於該銅粒子表面之氫化銅微粒子的複合粒子之 情形時’其平均粒徑係藉由SEM觀察該複合粒子整體,測 定亦包含銅微粒子在内之粒子整體之斐瑞特(Fe叫徑,將 所得之粒徑進行平均而算出者。 作為此種銅粒子(A) ’例如可列舉對銅粒子表面進行還 原處理而成之「表面改質銅粒子」,或於金屬銅粒子表面 之至少-部分附著有金屬銅微粒子之「複合金屬銅粒 本發明中之「表面改質銅粒子」係將銅粒子表面於阳值 為3以下之分散介質中進行還原處理而獲得。「表面改質銅 粒子」例如可料包括下述⑴〜(3)之步狀濕式還原法而 製造:⑴將銅粒子分散於分散介質中而製成「銅分 之步驟、(2)將銅分散液之pH值調整至特定值以下之二 驟、及(3)向銅分散液中添加還原劑之步驟。 藉由上述(1)〜(3)之步驟獲得之表面改質銅粒子係主要由 金屬銅粒子構成者。表面改質銅粒子之平均—次粒徑較佳 為0.3〜20㈣金屬銅粒子⑷))。絲面改質鋼粒子之平均 -次粒徑為0.3叫以上’則包含該銅粒子之導電糊之流動 特性變得良好。又,^表面改f銅粒子之平均—次粒徑為 ~〇 ,ΙΠΉ以下’則藉由包含讀銅粒子之導電糊可容易製作微 細配線0 t 以下,對製造表面改質銅粒子之步驟(1)〜(3)進行說明。 (1)鋼分散液之製作 用通常用作導電糊之銅 分散於銅分散液中之銅粒子可使 J60003.doc 201232563 粒子。分散於銅分散液中之鋼粒子之粒子形狀可為球狀, 亦可為板狀。 分散於銅分散液中之銅粒子之平均粒徑較佳為ο· μη-更佳為ho μηι。若銅粒子之平均粒徑未狀3㈣, 則存在使導電糊之流動性下降之虞。另—方面,若銅粒子 之平均粒徑超過20叫,則難以利用所得之導電糊製作微 細配線。藉由將銅粒子之平均粒徑設為G3〜2g叫,可製 成流動性良好,且適宜製作微細配線之導電糊。 再者,銅粒子之平均粒徑係對自SEM像中隨機選出之 個金屬銅粒子之斐瑞特(Feret)徑進行測定,算出其 均值而獲得者。 八 銅刀散液可將上述銅粒子製成*末狀投人分散介質令而 猨知銅刀散液之銅粒子濃度較佳為〇·卜“質量%。若銅 ==濃度未達〇.1質量% ’則存在銅分散液中所含之分散 "處置過多,無法將生產效率維持在充分之水平之虞。另 一方面,若鋼粒子之濃度超過5G質量%,則存在粒子彼此 *疑聚之衫響過大,表面改質銅粒子之產率下降之虞。 藉由將銅分散液之銅粒子濃度設為0.1〜50質量%之範圍 内可以回產率獲得表面改質銅粒子。 作為鋼粒子分散液之分散介質,只要為可分散銅粒子者 則並2別限制,可較佳地使用具有高極性者。作為高極 ^之分散介質,例如可使用:水、甲醇、乙醇、2-丙醇等 醇類、乙二醇等二醇類;及將該等混合而成之混合介質 等作為回極性之分散介質,尤其適宜使用水。 160003.doc 201232563 為防止粒子表面之氧化,分散於分散介質中之銅粒子亦 ’’丁為利用表面處理劑對粒子表面進行表面處理者。作為表 面處理劑,可使用硬脂酸、棕櫊酸、肉豆蔻酸等長鏈羧 酸。 於使用長鏈羧酸作為表面處理劑之情形時,較佳為自銅 粒子表面去除長鏈羧酸(表面處理劑)後使其分散於分散介 質中。藉由自銅粒子表面去除長鏈羧酸(表面處理劑)後使 其分散於分散介質中,可使下述還原反應順利地進行。 再者,於使用長鏈羧酸作為表面處理劑之情形時,亦可 將銅粒子直接用於還原處理。長鏈羧酸之去除例如可藉由 利用酸之清洗等方法而進行。 又為提高鋼粒子對分散介質之分散性,較佳為對銅粒 子進行預處理。藉由進行預處理,可使銅粒子表面親水性 上因此,可提高銅粒子對水等高極性分散介質之分散 性。 作為預處理劑,例如可較佳地使用碳數6以下之脂肪族 元羧馱、脂肪族羥基一元羧酸、脂肪族胺基酸等脂肪族 羧i類,及脂肪族聚羧酸類。作為脂肪族聚羧酸類, J可列舉妷數10以下之脂肪族聚羧酸或脂肪族羥基聚羧 i暖。—uj 马數8以下之脂肪族聚羧酸類。作為預處理 劑,具體____ ' έ可較佳地使用甘胺酸、丙胺酸、檸檬酸、蘋 果酸、順丁、嫌-_ 尺J邱—酸、丙二酸等。 較佳兔、 、 ° X上述方式獲得之銅分散液中添加分散劑。作 為分散劑,— 可使用對銅粒子具有吸附性之水溶性之各種化 160003.doc -13- 201232563 合物。 作為分散劑,具體而言,例如可使用聚乙稀醇、聚丙烯 酸、聚乙烯吡咯烷酮、羥丙基纖維素、丙基纖維素、乙基 纖維素等水溶性高分子化合物;&乙二胺四乙酸、亞胺基 二乙酸等螯合化合物等。 土 擔載於經上述各處理後之鋼粒子表面而存在之表面處理 劑、預處㈣、分㈣之量㈣為相對於銅粒子為〇卜1〇 質量%。 利用預處理劑或分散劑之鋼粒子之處理係向於水等溶劑 中添加預處理劑等而獲得之溶液中添加銅粒子並授摔。並 且’於該溶液中’彳以於銅粒子表面擔載預處理劑等之方 式而進行。 為提高處理速度,進行預處理時較佳為一面加熱銅分散 液一面進行。作為加熱溫度,較佳為於50。(:以上、水等分 散介質之沸點以下之溫度下進行。再者,於向分散介質中 添加繞酸等表面處理劑或分散劑之情形時,關於加熱溫 度’較佳為於該等化合物之沸點以下進行加熱。 進行加熱處理之時間較佳為5分鐘以上、3小時以下。若 加熱時間未達5分鐘,則存在無法充分獲得處理速度之提 咼效果之虞。另一方面,若加熱處理超過3小時則亦存 在成本變得過高之虞,就經濟方面而言欠佳。 再者,於進行預處理等時,為防止鋼粒子表面之氧化, 較佳為以氮氣、氬氣等惰性氣體對處理容器内進行置換。 預處理後去除溶劑’根據需要以水等進行清洗,藉此可獲 160003.doc • 14 · 201232563 得分散於分散液中之銅粒子。 (2)銅分散液之pH值之調整 對上述(1)中獲得之鋼分散液之pH值進行調整。pH值之 凋正可向銅分散液中添加pH值調整劑而進行。 作為鋼分散液之PH值調整劑,可使用酸。作為銅分散液 之pH值調整劑’例如可較佳地使用甲酸、檸檬酸、順丁烯 一酸、丙二酸、乙酸、丙酸等羧酸;或硫酸、硝酸、鹽酸 等無機酸。作為幾酸,可使用與上述用作預處理劑之竣酸 同樣之化合物。 4等之中,作為pH值調整劑,可較佳地使用羧酸。藉由 使用羧酸作為pH值調整劑,可使羧酸吸附於銅粒子表面, 並殘留於還原處理後之表面改質銅粒子之表面而保護粒子 表面,從而抑制銅之氧化反應。 尤其是甲酸含有具有還原性之酸基(·〇Η〇),㈣殘留於 铿表面改質之銅粒子表面,而抑制粒子表面進行氧化。藉 由使用調配有此種銅粒子之導電糊,可形成難以形成氧化 覆膜而體積電阻率之上升得到抑制之導電膜。再者,作為 ΡΗ值調整劑,未必限定於酸成分。例如於分散液之_ 較低之情形時,亦可使用鹼作為pH值調整劑。 銅分散液之pH值較佳為設為3以下。藉由將銅分散液之 PH值設為3以下,可於後續之還原處理步驟中順利地去除 粒子表面之氧化膜,而降低所得表面改質銅粒子之表面氧 濃度。若分散液之pH值超過3,則存在無法充分獲得形2 於銅粒子表面之氧化膜之去除效果’而無法充分降低銅粒 160003.doc 201232563 子表面之氧濃度之虞。另一方面,分散液之pH值較佳為設 為0.5以上。若分散液之值未達〇 5,則存在銅離子過度 溶出,難以順利地進行銅粒子之表面改質之虞。分散液之 pH值更佳為設為〇·5以上、2以下。再者,於分散液之阳值 為3以下之情形時,亦可對該分散液直接進行還原處理。 (3)銅分散液之還原處理 向PH值經過調整之銅分散液中添加還原劑而進行還原處 理。 作為添加於銅分散液中之還原劑,可使用選自金屬氫化 物 '虱化還原劑、次亞磷酸、次亞磷酸鈉等次亞磷酸鹽、 二甲胺㈣等胺職、及甲酸中之至少—種。作為金屬氮 化物’可列舉氫化鐘、氫化鉀、及氫化㈣為氫化還原 劑’可列舉氫化經紹、氫化侧鐘、&氮化爛納。該等之 中可較佳地使用次亞鱗酸、次亞鱗酸鈉。 再者’如上所述,▼酸亦可用作阳值調整劑。因此,於 向分散介質中添加甲酸之情形時,其作為還原劑發揮作用 之同時亦作為pH值調整劑發揮作用。 添加於銅分散液中之還原驗佳為相對於粒子表面之銅 原子量大幅過剩地添加。具體而言,較佳為添加相對於八 散液中所含銅粒子之總莫耳數’以莫耳比計為#量以上 之還原劑,可添加相對於銅粒子之總銅原子莫耳數 耳比計為1.2〜1 0倍量之還原劑。 、 :添加相對於銅之總莫耳數為1〇倍以上量之還原 存在於成本方面不利’生產成本變得過高之虞。又,存在 J60003.doc -16- 201232563 其之去除較為繁雜之 源自還原劑之分解產物之量過多 虞。 遞原反應較佳為將分散介質之溫度設為5〜6Gt而進行, 更佳為設為35〜5Gt而進行。藉由將分散液之溫度設為 :)〇C以下’可降低自銅分散液中蒸發去除分散介質時分散 液整體之濃度變化之影響。 如上所述,銅粒子之還原可向銅分散液中添加還原劑而 進行,或者於添加有還原劑之分散介質中分散銅粒子而進 再者,添加還原劑後之銅分散液之阳值較佳為自反應開 始時至反應結束時為止保持為3以下之狀態。藉此,可順 利地進行銅粒子表面之氧化膜之去除。 *鋼分散液之氧化還原電位可根據還原劑之添加量或種類 等進行適當調整。銅分散液之氧化還原電位較佳為相對於 標準氫電極(SHE,Standard Hydrogen幻⑽㈣之電位, 為100〜300 mV’更佳為100〜220 mV。藉由將銅分散液之 氧化還原電位相對於標準氫電極(SHE)之電位設為1〇〇〜3〇〇 mV ’可順利地進行銅離子之還原反應。 再者,氧化還原電位可作為與標準電極之電位差而求 付。於本說明書中’氧化還原電位係以使用標準氫電極作 為標準電極而測定之電位差而表示。 於還原劑之分解大致結束後,自分散液中分離經表面改 質之銅粒子。並且,根據需要以水等進行清洗,並加以乾 燥’而可獲得表面氧濃度比O/Cu為0.5以下之表面改質銅 160003.doc -17- 201232563 粒子即銅粒子⑷粉末。銅粒子⑷之表面氧濃度 比O/Cu可 於上述⑴〜(3)之步驟中’例如藉由調整銅分散液之pH值或 調整銅分散液之氧化還原電位,而調整至所需之範圍内。 藉由進行上述步驟⑴〜(3)之表面處理,可將作為起始原 料之銅粒子表面存在之氧化銅(CU2〇、Cu⑺還原為銅原 子,而可降低成為阻礙導電性之主要因素的氧化銅之存在 量° 再者,還原劑分解物等副產物通常為可溶於分散介質之 成分。因’藉由進行過濾或離心分離,可將銅粒子自該 等成分中分離。 又’於上述步驟⑴〜(3)之表面處理後之銅粒子表面,有 時由於還原劑使得銅原子之一部分被還原,而生成氫化 銅。因此’表面處理後之銅粒子亦可自分散液中分離後, 於40〜12(TC下進行加熱處理,藉此將氫化銅轉換為銅。 如上文所述,本發明中之「複合金屬銅粒子」係於金屬 銅粒子表面之至少一部分附著有金屬銅微粒子者。「複合 金屬銅粒子」係加熱於金屬銅粒子表面附著氫化銅微粒子 而成之「銅複合粒子」,將氫化銅微粒子轉換為金屬銅微 粒子而&得者再者,金屬銅粒子表面有無附著微粒子可 觀察SEM像而確認。又,附著於金屬銅粒子表面之氯化銅 微粒子之鑑定可利用X射線繞射裝置(Rigaku公司製造, TTR-III)進行。 銅複合粒子之金屬銅粒子可使用通常用於導電糊之公知 之銅粒子。金屬銅粒子之粒子形狀可為球狀,亦可為板 160003.doc 201232563 狀。 子之平均粒徑較佳為〇 3〜2〇 銅複合粒子之金屬銅粒 μιη,更佳為1〜1 〇 μιη。 若金屬銅粒子之平均粒徑夫揸η 仏禾運0J μηι,則製成導電糊 無法獲得充分之流動特性。另一方 Λ 万面,右金屬銅粒子之平 均粒徑超過20叫’則存在難以利用所得之導電糊製作微 細配線之虞。金屬銅粒子之平均粒徑更佳為卜1〇再 者,金屬銅粒子之平均粒徑係對自贿像或魏像中隨機 選出之1GG個金屬銅粒子之斐瑞特(Feret)徑進行測定,將 £亥測疋值進行平均而算出者。 銅複合粒子之氫化銅微粒子主要以卜2〇 左右之一次 粒子凝聚Me次粒子的形式存在。氫㈣微粒子之粒 f形狀可為球狀,亦可為板狀。氫化銅微粒子之凝聚粒子 之平均粒徑較佳為20〜4〇〇nm,更佳為^⑼⑽,更佳為 -〇 △00 nm。尤佳為8〇〜15〇 nn^若氫化銅微粒子之凝聚粒 F之平均粒徑未達2〇 nm,則有容易發生氫化銅微粒子之 融合、成長’於製成導電膜時產生伴隨體積收縮之龜裂等 不良It形之虞。另—方面’若氫化銅微粒子之凝聚粒子之 平均粒徑超過400 nm,則粒子表面積不夠充分,難以產生 表面炼融現象’使得形成緻密之導電膜變困難。氫化鋼微 '泣子之平均粒徑係對自TEM像或SEM像中隨機選出之100 個氫化銅微粒子之斐瑞特(Feret)徑進行測定,將該測定值 進行平均而算出者。 作為銅複合粒子,較佳為包含平均一次粒徑為〇_3〜20 160003.doc •19- 201232563 μηι之金屬鋼粒子、及附著於該金屬銅粒子表面且其凝聚 粒子之平均粒彳坐為2〇〜4〇〇 nm之氫化銅微粒子的複合粒子 (銅複合粒子(A2))。 附者於金屬鋼粒子表面之氫化銅微粒子之量較佳為金屬 銅粒子之量之5〜50質量°〆。、更佳為10〜35質量%。 若氫化銅微粒子之量相對於金屬銅粒子之量未達5質量 %,則存在金屬銅粒子間未充分形成導電通道而無法充 分獲得降低導電膜之體積電阻率之效果之虞。另_方面, 若氫化銅微粒子之量相對於金屬銅粒子之量超過50質量 %,則難以確保作為導電糊而充分之流動性。 再者,附著於金屬銅粒子表面之氫化銅微粒子之量例如 ΤΓ根據添加還原劑則之水溶性銅化合物溶液中之鋼離子濃 度、與氫化銅微粒子生成結束後之反應液中殘留之銅離子 濃度的差而算出。 銅複合粒子例如可藉由包括下述(i)〜(iii)之步驟之濕式 還原法而製造:⑴於反應系統(R)中形成氫化銅微粒子之 步驟,(11)向反應系統(R)中投入金屬銅粒子,使氫化銅微 粒子附著於金屬銅粒子表面而形成「銅複合粒子」之步 驟’(iii)將「銅複合粒子」自反應系統(R)中分離之步驟。 加熱該銅複合粒子’將氫化銅微粒子轉換為金屬銅微粒 子,藉此可獲得「複合金屬鋼粒子」。 再者,於本說明書中,所謂「反應系統(R) J,係指生成 氮化銅微粒子之系統。反應系統(尺)不僅包括(01)於水溶性 銅化合物溶液中添加還原劑之未反應狀態之系統,亦包括 160003.doc -20· 201232563 (β)藉由水溶性銅化合物與還原劑之反應正進行氫化鋼微粒 子之生成之狀態的系統,以及(γ)氫化銅微粒子之生成反應 結束,生成後之氫化銅粒子為分散狀態之系統。 即,所謂「反應系統(R)」,係指於水等溶劑中存在水溶 性銅化合物、銅離子、各種陰離子,同時存在氯化銅微粒 子之生成後殘留於溶劑中之各種離子、其他殘渣、還原劑 或其分解物等者。因此,將生成後之氫化銅微粒子自溶液 中單離並分散於新的分散介質中而獲得之分散液係不符合 本說明書中之反應系統(R)者。 以下’對製造銅複合粒子之步驟⑴〜(出)、及由該銅複 合粒子製造複合金屬銅粒子之方法進行說明。 ⑴氫化銅微粒子之形成 反應系統(R)可向將水溶性鋼化合物添加於溶劑中而形 成之水溶性銅化合物溶液中至少添加還原劑而形成。 作為形成反應系統(R)之水溶性銅化合物,較佳為銅 鹽。作為銅鹽,更適宜使用銅(11)離子與無機酸或叛酸之 鹽。作為形成銅鹽之缓酸,較佳為亦包括幾基之碳原子在 内碳數為卜4之幾酸’尤佳為甲酸、乙酸、或丙酸。作為 水溶性之銅化合物,尤其適宜使用硫酸銅、石肖酸銅、甲酸 銅、乙酸銅、氣化銅、演化銅、蛾化銅等。 再者’作為上述水溶性鋼化合物溶液之溶劑,只要為可 溶解水溶性銅化合物者,則可無特別限制地使用。作為水 溶性鋼化合物溶液之溶劑,尤其適宜使用水。 ㈣性銅化合物溶液中所含之水溶性銅化合物之濃度相 160003.doc 201232563 對於溶液_質量%,難州〜3Gf4%。若水溶性銅化 合物之濃度未達(M質量% ’則溶液中之水分量過多,氫化 銅微粒子之生產效率下降。另—方面,若水溶性銅化合物 之濃度超過30質量%’則存在氫化銅微粒子之產率反而下 降之虞。 2加還原劑之水溶性銅化合.物溶液較佳為將p Η值調整為 特定值以下。作為水溶性銅化合物溶液之ρΗ值調整劑可 使用與表面改質銅粒子之製造步驟之說明中作為銅分散液 之ΡΗ值調整劑所列舉之酸成分同樣者。具體而言,例如可 使用曱酸、檸檬酸、順丁稀二酸、丙二酸、乙酸、丙酸、 硫酸、硝酸、鹽酸等。 «玄等之中,作為水溶性銅化合物溶液之?11值調整劑,尤 其是可較佳地使用甲酸。由於甲酸含有具有還原性之酿基 (-CHO),故可殘留於粒子表面,抑制銅微粒子之氧化。 水溶性銅化合物溶液之pH值較佳為設為3以下。藉由將 水溶性銅化合物溶液之pH值設為3以下,可提高氫化銅微 粒子之生成效率。推測其原因在於,可於銅離子與氫離子 混合存在於溶液中之狀態下進行還原處理。若水溶性銅化 合物溶液之pH值超過3 ,則存在容易生成金屬銅微粒子, 氯化銅微粒子之生成率下降之情況。就提高氫化銅微粒子 之生成率之觀點而§,更佳為將水溶性鋼化合物溶液之 值設為0.5〜2。 作為還原劑’可使用選自金屬氫化物 '氫化還原劑、次 亞磷酸、次亞磷酸鈉等次亞磷酸鹽、二甲胺硼烷等胺硼 •22- 160003.doc 201232563 烷、及甲酸中之至少一種。作為金應 m赝虱化物,可列舉:氫 化Μ、氫化鉀、及氫㈣。作為氫化還原冑,可列舉:氯 化㈣、氫化、及氫化軸。於該等之中,可較佳地 使用次亞树、次亞雜鈉。再者,如上所述,甲酸亦可 用作ΡΗ值調整劑,故於分散介f中添加甲酸之情形時,其 作為還原劑發揮功能之同時亦作為ρί1值調整劑發揮功能了 水溶性銅化合物溶液之還原劑較佳為相對於溶液中之銅 離子’以丨.2〜Η)倍之當量數添力”若添加於水溶性銅化合 物溶液t之還原劑之量相對於銅離子之量未達1 2倍之者 量數’則難以獲得充分之還原作用。另一方面,若還原二 之添加量相對於銅離子之量超過1G倍之當量數,則存在氮 化銅微粒子之鈉、硼、磷等雜質之含量增大的情況。 反應系、統(R)例如可將滿合上述還原劑與水等溶劑而成 之還原劑溶液與水溶性銅化合物溶液混合而形成。又,反 應系統(R)亦可將固體狀態之還原劑添加於水溶性銅化合 物溶液中而形成。於以此種方式形成之反應系統⑻中, 銅離子於酸性條件下藉由還原劑而還原,生成氫化銅微粒 子’並進行顆粒成長。 (H)銅複合粒子之形成 向上述⑴中形成之反應系統(R)中投入金屬銅粒子,使 該金屬銅粒子表面附著氫化銅微粒子而形成「鋼複合粒 子」。 首先,將金屬銅粒子投入反應系統(尺)中。再者,金屬 銅粒子之形狀、粒徑如上所述。 160003.doc • 23- 201232563 金屬鋼粒子較佳為添加至存在銅離子之階段之反 (R)中、或水溶性鋼化合物溶液中。 心…· 藉由向存在鋼離子之反應系統⑻令添力L粒子, 可於金屬鋼粒子與氫化銅微粒子共存之環境下進行銅離子 之還原反應。因此,可於金屬銅粒子與氯化鋼微粒子間形 結合狀態°再者’反應系統⑻中有無存在銅離 子可藉由鋼離子電極或利用可見光吸收光譜之銅離子之濃 度測疋而確$。又’有無存在銅離子亦可藉由水溶液之氧 化還原電位之測定而確認。 即,金屬銅粒子較佳為添加至正在生成氫化銅微粒子之 反應系統(R)中。或者較佳為向添加還原劑前之水溶性銅 化合物溶液中添加金屬銅粒子’其後添加還原劑而形成反 應系統(R)。較佳為向正在生成氫化鋼微粒子之反應系統 (R)中添加金屬鋼粒子。 再者,添加金屬銅粒子之反應系統(11)並非限於上述狀 態者。例如亦可向由於進行還原反應而使反應系統(R)中 之銅離子量或還原劑量減少,且氫化銅微粒子之生成或生 成後之氫化銅微粒子之成長已停止之狀態的反應系統(r) 中添加金屬銅粒子,即’金屬銅粒子可投入氫化銅微粒子 生成則之反應系統(R)中,亦可投入正在生成氫化銅微粒 子之反應系統(R)令’且可投入氫化銅微粒子生成後之反 應系統(R)中。 藉由向反應系統(R)中投入金屬銅粒子,可使該金屬銅 〆子表面附著虱化銅微粒子,而於反應系統(R)中形成 160003.doc -24 * 201232563 「銅複合粒子」。 添加金屬銅粒子之反應系統⑻中所含之銅離子存在量 相對於還原劑添加前之水溶性銅化合物溶液之銅離子存在 量,較佳為1〜100質量%,宙π # r 曹。更佳為5〜100質量。/。。再者,水 溶性銅化合物溶液中之銅均為經離子化者。 反應系統(R)之溫度較佳為。广丨、,τ , 平又住局60 C U下。藉由將反應系統 (R)之溫度設為60°C以下,ότ*女nitlc:也a 下可抑制反應系統(R)中之氫化銅 微粒子之分解。 金屬銅粒子較佳為於反應系統⑻之氧化還原電位為 100 300 mV aHE之範圍、更佳為1〇〇〜22〇 mV SHE之範圍 之狀態下進行添加。 月者SHE」係指標準氫電極。又,「爪乂 she」係表 不以‘準氫電極作為基準而測定之氧化還原電位。於本說 月睿中^化還原電位之測定值係以標準氫電極作為基準 而測定者。 (.iii)銅複合粒子之分離 將反應系統(R)中形成之銅複合粒子自該反應系統(R)中 分離。 作為將銅複合粒子自反應系統(R)中分離之方法,並無 特別限制。作為將銅複合粒子自反應系統(R)中分離之方 法,例如可藉由離心分離、過濾等方法,自反應系統 中V離粉末狀之銅複合粒子。 自反應系統中分離銅複合粒子後,進行將附著於粒子表 面之/合解性雜質以水等清洗液去除等清洗。藉由以上述方 160003.doc *25- 201232563 式對分離後之銅複合粒子進行純化處理,可獲得金屬銅粒 子表面附著有氫化銅微粒子之粉末狀之銅複合粒子。再 者,亦可於進行銅複合粒子之分離前置換反應系統(11)之 溶劑,與溶劑一同去除還原劑之分解物等雜質。 對自反應系統(R)中分離之銅複合粒子進行加熱處理, 將氫化銅微粒子轉換為金屬銅微粒子,藉此,可獲得表面 氧濃度比O/Cu為0.5以下之複合金屬銅粒子。 複合金屬銅粒子可藉由存在於金屬銅粒子間之金屬銅微 粒子而確實地形成導電通道,從而降低製成導電膜時之體 積電阻率。又,如上所述,藉由將氫化銅微粒子轉換為金 屬銅微粒子,可使金屬銅微粒子自金屬銅粒子之剝離難以 產生。因此,藉由使金屬銅微粒子游離於導電糊中,可製 成導電糊之黏度上升得到抑制之導電糊。 銅複合粒子之加熱處理較佳為以6〇〜12〇<t之溫度進行。 若加熱溫度超過120。(:,則存在金屬鋼微粒子彼此容易產 生融合,製成導電膜時之體積電阻率變高之虞。另一方 面,若加熱溫度未達60。。,則加熱處理所需要之時間變 長’就製造成本方面而言欠佳。 銅複合粒子之加熱處理更佳為於6〇〜1〇〇t下進行,進而 更佳為於60〜90。。下進行。再者,加熱處理後所得之複合 金屬銅粒子之殘留水分量較佳為3質量%以下,更佳為^ 質量%以下。 · 銅複合粒子之加熱處理較佳為以相對壓力計於_i〇U ^之減壓下進行。若於大於之壓力下進行加熱處 I60003.doc -26 - 201232563 理,則乾燥所需之時間變長,就製造成本之方面而言欠 佳。另-方面’若加熱處理時之壓力未達心,則例 如水等多聽劑之去除、乾燥需要使用大型裝置,反而使 製造成本變高。 「複合金屬銅粒子」之表面氧濃度比o/cu可藉由在上述 ⑴〜㈣之步驟中調整水溶性銅化合物溶液之_、反應 系統⑻之氧化還原電位或反應系統(R)之溫度等,或者調 整銅複合粒子之加熱處理時之氧分壓等,而調整至所需: 範圍。 經過上述各步驟而獲得之複合金屬銅粒子的金屬銅粒子 之平均-次粒徑較佳為〇.3〜2〇㈣。又,附著於該金屬銅 粒子表面之金屬銅微粒子之„粒子的平均粒徑較佳為 20〜400 nm(複合金屬銅粒子(A4))。 若「複合金屬銅粒子」之金屬銅粒子之平均粒徑未達 ().3 Km,則於製成導電糊時,無法獲得充分之流動特性。 另一方面,若金屬銅粒子之平均粒徑超過2〇 pm,則難以 藉由所得之導電糊製作微細配線。「複合金屬鋼粒子」中 之金屬銅粒子之平均粒徑尤佳為1〜1 〇 μηι。 與銅複合粒子中之氫化銅微粒子同樣地,「複合金屬銅 粒子」之銅微粒子主要以nm左右之一次粒子凝聚而 成之二次粒子的形式存在。銅微粒子之粒子形狀可為球 狀,亦可為板狀。若銅微粒子之凝聚粒子之平均粒徑未達 2〇 nm,則存在容易發生銅微粒子之融合、成長,於製成 導電臈時產生伴隨體積收縮之龜裂等不良情形之虞。另一 160003.doc -27· 201232563 方面’若銅微粒子之凝聚粒子之平均粒徑超過· _,則 ^子^積不充分,難以產生表㈣解現象,使得形成緻 密之導電膜變困難。銅微粒子之凝聚粒子之平均粒徑更佳 為30〜3〇0nm,更佳為5〇〜2〇〇nm。尤佳為 再者’金屬鋼粒子之平均粒徑係對自侧像或㈣像中 隨機選出之100個金屬銅粒子之斐瑞特(FeM)徑進行測 定’將該測定值進行平均而算出者。χ,銅微粒子之平均 粒徑係對自ΤΕΜ像或SEM像中隨機選出之⑽個氫化銅微 粒子之斐瑞特(Feret)徑進行職,將該測定值進行平均而 算出者。 作為其他銅粒子(A) ’亦可較佳地使用凝聚粒子之平均 粒徑為10 nm〜i μπι之氫化銅微粒子(A3)〇氫化銅微粒子 (A3)例如可利肖「銅複合粒子」之製造步驟中使用的水溶 性銅化合物之溶液而形成。具體而言’例如可藉由如下方 式獲得,即於pH值為3以下,且氧化還原電位為1〇〇〜3〇〇 mV SHE、較佳為1〇〇〜220 mV 81^之條件下’向該水溶性 銅化合物之溶液中添加還原劑而獲得。作為還原劑,可使 用與「銅複合粒子」之製造步驟中使用之還原劑同樣者。 再者’氫化微粒子之凝聚粒子之平均粒徑可藉由控制還 原反應時之反應溫度或反應時間,或者添加分散劑而調 整。 作為銅粒子(A) ’亦適宜使用對該氫化鋼微粒子(A3)進 行加熱處理而獲得之金屬鋼微粒子(A5)。即,作為銅粒子 (A)’亦適宜使用其凝聚粒子之平均粒徑為1〇 nm〜i ^爪之 160003.doc • 28 · 201232563 金屬銅微粒子(A5)。 又’作為獲得表面氧濃度比O/Cu為0.5以下之銅粒子(A) 之方法,並不限於如上所述之利用濕式還原之方法。作為 獲得表面氧濃度比〇/Cu為0.5以下之銅粒子之方法,例 如亦可藉由利用鹽酸、硫酸、硝酸等酸清洗形成於銅粉末 表面之氧化膜,溶解去除氧化膜而進行。 又’作為用以獲得表面氧濃度比O/Cu為0.5以下之銅粒 (A)之方法’除上述方法以外,例如亦可藉由向銅粒子 表面導入還原性氣體’於該氣體中對銅粒子進行加熱處理 等而進行。 具體而言,例如首先導入氫氣、一氧化碳、天然氣、氨 分解氣體等還原性氣體,或者使内部成為真空,藉此使還 原爐内成為還原性環境。然後,向該還原爐内加入銅粒 f,於120〜400 C之溫度範圍内對鋼粒子進行還原處理, 藉此可去除粒子表面之氧化物。 又’作為使用還原性氣體之其他方法,亦可藉由在惰性:^^ "SEM" (SeanningEle_nMie_pe)) M (four) « The particle of the Fruid (F(10)) diameter of the particle is calculated by averaging the particle diameters. Further, the average particle diameter of the aggregated particles including the copper microparticles is measured by an electron microscope (hereinafter referred to as "French" (Transmissi〇n Eiectr〇n Μ (10) coffee (4)), which is randomly selected from the particles (10) (10). In addition, for example, copper composite particles (A2) include copper particles 160003.doc 201232563, and composite particles of copper hydride microparticles attached to the surface of the copper particles. In the case of the average particle diameter, the entire particle size is observed by SEM, and the whole particle of the particle including the copper microparticles is measured, and the Fe diameter is calculated by averaging the obtained particle diameter. The copper particles (A) 'is, for example, "surface-modified copper particles" obtained by subjecting the surface of copper particles to reduction treatment, or "composite metal copper particles to which at least part of the surface of the metal copper particles adheres to metallic copper particles". The "surface-modified copper particles" are obtained by reducing the surface of copper particles in a dispersion medium having a positive value of 3 or less. "Surface-modified copper particles" can be, for example, It is produced by the following step (1) to (3) wet reduction method: (1) dispersing copper particles in a dispersion medium to form a "copper fraction step, (2) adjusting the pH of the copper dispersion to a specific value. The following two steps, and (3) a step of adding a reducing agent to the copper dispersion. The surface-modified copper particles obtained by the above steps (1) to (3) are mainly composed of metallic copper particles. The average-secondary particle diameter of the copper particles is preferably 0.3 to 20 (four) metal copper particles (4))). The average-minor particle diameter of the surface-modified steel particles is 0.3 or more, and the flow characteristics of the conductive paste containing the copper particles are included. It is also good. Moreover, the surface of the copper particles is changed to the average of the secondary particles, and the sub-grain size is ~〇, and the following is the case where the conductive wiring containing the copper particles can be easily fabricated to make the fine wiring 0 t or less. Steps (1) to (3) of the particles are described. (1) Preparation of Steel Dispersion Copper particles which are usually used as a conductive paste in which copper is dispersed in a copper dispersion can disperse particles dispersed in copper by J60003.doc 201232563. The particle shape of the steel particles in the liquid may be spherical or plate-shaped. The average particle diameter of the copper particles in the dispersion is preferably ο·μη - more preferably ho μηι. If the average particle diameter of the copper particles is not 3 (four), the fluidity of the conductive paste is lowered. When the average particle diameter of the copper particles exceeds 20, it is difficult to form fine wiring by using the obtained conductive paste. By setting the average particle diameter of the copper particles to G3 to 2 g, fluidity can be improved, and fine wiring can be suitably produced. Further, the average particle diameter of the copper particles is obtained by measuring the Feret diameter of the metal copper particles randomly selected from the SEM image, and calculating the mean value thereof. The copper particles are made into a *end-shaped dispersion medium, and the copper particle concentration of the copper knives is preferably "% by mass". If the copper == concentration does not reach 〇.1 mass% ’, there is a dispersion contained in the copper dispersion. “There is too much disposal, and the production efficiency cannot be maintained at a sufficient level. On the other hand, if the concentration of the steel particles exceeds 5 G mass%, there is a case where the particles of the particles are too loud and the yield of the surface-modified copper particles is lowered. The surface-modified copper particles can be obtained in a yield by setting the copper particle concentration of the copper dispersion to a range of 0.1 to 50% by mass. The dispersion medium of the steel particle dispersion liquid is not particularly limited as long as it is a dispersible copper particle, and those having high polarity can be preferably used. As the dispersion medium of the high electrode, for example, an alcohol such as water, methanol, ethanol or 2-propanol or a glycol such as ethylene glycol; and a mixed medium obtained by mixing the same can be used as the dispersion of the polarity. Medium, especially suitable for use with water. 160003.doc 201232563 In order to prevent oxidation of the surface of the particles, the copper particles dispersed in the dispersion medium are also surface treated by surface treatment agents. As the surface treatment agent, long-chain carboxylic acid such as stearic acid, palmitic acid or myristic acid can be used. In the case where a long-chain carboxylic acid is used as the surface treatment agent, it is preferred to remove the long-chain carboxylic acid (surface treatment agent) from the surface of the copper particles and then disperse it in the dispersion medium. By removing the long-chain carboxylic acid (surface treatment agent) from the surface of the copper particles and dispersing them in a dispersion medium, the following reduction reaction can be smoothly carried out. Further, in the case where a long-chain carboxylic acid is used as the surface treating agent, the copper particles can also be directly used for the reduction treatment. The removal of the long-chain carboxylic acid can be carried out, for example, by a method such as washing with an acid. Further, in order to improve the dispersibility of the steel particles to the dispersion medium, it is preferred to pretreat the copper particles. By performing the pretreatment, the surface of the copper particles can be made hydrophilic, and therefore, the dispersibility of the copper particles with respect to a highly polar dispersion medium such as water can be improved. As the pretreatment agent, for example, an aliphatic carboxy group such as an aliphatic carboxy oxime having 6 or less carbon atoms, an aliphatic hydroxy monocarboxylic acid or an aliphatic amino acid, and an aliphatic polycarboxylic acid can be preferably used. As the aliphatic polycarboxylic acid, J may be an aliphatic polycarboxylic acid having 10 or less turns or an aliphatic hydroxypolycarboxylate. —uj An aliphatic polycarboxylic acid having a horse number of 8 or less. As the pretreatment agent, specifically, glycine, alanine, citric acid, succinic acid, cis-butyl, s---J-acid, malonic acid and the like can be preferably used. Preferably, a dispersing agent is added to the copper dispersion obtained by the above method in rabbit, ° X. As a dispersing agent, various kinds of water-soluble compounds which are adsorptive to copper particles can be used, 160003.doc -13- 201232563. As the dispersing agent, specifically, for example, a water-soluble polymer compound such as polyethylene glycol, polyacrylic acid, polyvinylpyrrolidone, hydroxypropylcellulose, propylcellulose or ethylcellulose can be used; & ethylenediamine Chelating compounds such as tetraacetic acid and iminodiacetic acid. The amount of the surface treatment agent, the pre-treatment (4), and the sub-(4) present on the surface of the steel particles after the respective treatments described above are (1) by mass relative to the copper particles. The treatment of the steel particles using the pretreatment agent or the dispersant adds copper particles to the solution obtained by adding a pretreatment agent or the like to a solvent such as water and imparts a drop. Further, in the solution, the surface of the copper particles is supported by a pretreatment agent or the like. In order to increase the processing speed, it is preferred to carry out the pretreatment, while heating the copper dispersion on one side. The heating temperature is preferably 50. (It is carried out at a temperature lower than or equal to the boiling point of the dispersion medium such as water. Further, when a surface treatment agent or a dispersant such as an acid is added to the dispersion medium, the heating temperature is preferably such a compound. Heating is performed at a boiling point or lower. The heat treatment time is preferably 5 minutes or longer and 3 hours or shorter. If the heating time is less than 5 minutes, the effect of improving the treatment speed cannot be sufficiently obtained. In the case of more than 3 hours, the cost is too high, and it is economically unsatisfactory. Further, in order to prevent oxidation of the surface of the steel particles during pretreatment, etc., it is preferable to be inert to nitrogen or argon. The gas is replaced in the processing vessel. After the pretreatment, the solvent is removed, and it is washed with water or the like as needed, thereby obtaining copper particles dispersed in the dispersion. (2) Copper dispersion Adjustment of pH The pH of the steel dispersion obtained in the above (1) is adjusted. The pH value can be adjusted by adding a pH adjuster to the copper dispersion. As the whole agent, an acid can be used. As the pH adjuster of the copper dispersion, for example, a carboxylic acid such as formic acid, citric acid, maleic acid, malonic acid, acetic acid or propionic acid; or sulfuric acid or nitric acid can be preferably used; An inorganic acid such as hydrochloric acid, etc. As the acid, a compound similar to the above-described citric acid used as a pretreatment agent can be used. Among the four or the like, a carboxylic acid can be preferably used as the pH adjuster. As a pH adjuster, the carboxylic acid can be adsorbed on the surface of the copper particles and remain on the surface of the surface-modified copper particles after the reduction treatment to protect the surface of the particles, thereby suppressing the oxidation reaction of copper. In particular, the formic acid contains a reducing property. The acid group (·〇Η〇), (4) remains on the surface of the copper particles modified on the surface of the crucible, and inhibits oxidation of the surface of the particles. By using a conductive paste prepared with such copper particles, it is difficult to form an oxide film and the volume is formed. The conductive film which suppresses the increase in the resistivity is not necessarily limited to the acid component. For example, when the dispersion is low, a base may be used as the pH adjuster. The pH value is preferably set to 3. If the pH of the copper dispersion is set to 3 or less, the oxide film on the surface of the particle can be smoothly removed in the subsequent reduction treatment step, and the surface-modified copper particles obtained can be reduced. When the pH of the dispersion exceeds 3, the effect of removing the oxide film on the surface of the copper particles cannot be sufficiently obtained, and the oxygen concentration of the surface of the copper particles 160003.doc 201232563 cannot be sufficiently reduced. On the other hand, the pH of the dispersion liquid is preferably 0.5 or more. When the value of the dispersion liquid is less than 〇5, copper ions are excessively eluted, and it is difficult to smoothly reform the surface of the copper particles. The pH is more preferably 5% or more and 2 or less. Further, when the positive value of the dispersion is 3 or less, the dispersion may be directly subjected to reduction treatment. (3) Reduction treatment of copper dispersion A reducing agent is added to the copper dispersion whose pH has been adjusted to carry out reduction treatment. As the reducing agent to be added to the copper dispersion, a metal hydride reducing agent, a hypophosphite such as hypophosphite or sodium hypophosphite, an amine group such as dimethylamine (tetra), and formic acid can be used. At least - kind. Examples of the metal nitrides include a hydrogenation clock, potassium hydride, and hydrogenation. The hydrogenation reducing agent is exemplified by hydrogenation, hydrogenation side, and nitriding. Among them, sub squaric acid and sodium hyposulfite can be preferably used. Further, as described above, the acid can also be used as a positive value adjusting agent. Therefore, when formic acid is added to the dispersion medium, it functions as a reducing agent and also functions as a pH adjuster. The reduction test added to the copper dispersion is excessively added to the amount of copper atoms on the surface of the particles. Specifically, it is preferable to add a reducing agent having a total molar number of copper particles contained in the eight-dispersion liquid to a molar amount of more than # molar amount, and to add a total number of copper atoms in the molar amount relative to the copper particles. The ear ratio is 1.2 to 10 times the amount of the reducing agent. : Adding a reduction of the total number of moles relative to copper by more than 1〇 is present in terms of cost. The production cost becomes too high. Further, there is a J2063.doc -16-201232563 which is more complicated to remove and the amount of decomposition products derived from the reducing agent is excessive. The reversion reaction is preferably carried out by setting the temperature of the dispersion medium to 5 to 6 Gt, more preferably 35 to 5 Gt. By setting the temperature of the dispersion to :) 〇C or less, the influence of the concentration change of the entire dispersion liquid when the dispersion medium is evaporated from the copper dispersion can be reduced. As described above, the reduction of the copper particles can be carried out by adding a reducing agent to the copper dispersion, or by dispersing the copper particles in the dispersion medium to which the reducing agent is added, and the positive value of the copper dispersion after adding the reducing agent is higher. It is preferably maintained at a state of 3 or less from the start of the reaction to the end of the reaction. Thereby, the removal of the oxide film on the surface of the copper particles can be smoothly performed. * The oxidation-reduction potential of the steel dispersion can be appropriately adjusted depending on the amount or type of the reducing agent added. The redox potential of the copper dispersion is preferably from 100 to 300 mV, more preferably from 100 to 300 mV, relative to a standard hydrogen electrode (SHE, Standard Hydrogen (10) (four). By reducing the redox potential of the copper dispersion The potential of the standard hydrogen electrode (SHE) is set to 1 〇〇 to 3 〇〇 mV ', and the reduction reaction of copper ions can be smoothly performed. Further, the oxidation-reduction potential can be obtained as a potential difference from the standard electrode. The 'redox potential> is expressed by a potential difference measured using a standard hydrogen electrode as a standard electrode. After the decomposition of the reducing agent is substantially completed, the surface-modified copper particles are separated from the dispersion, and water is required as needed. It is cleaned and dried to obtain a surface-modified copper with a surface oxygen concentration ratio of O/Cu of 0.5 or less. 160003.doc -17- 201232563 Particles are copper particles (4) powder. Surface oxygen concentration ratio of copper particles (4) is O/Cu In the above steps (1) to (3), for example, by adjusting the pH of the copper dispersion or adjusting the oxidation-reduction potential of the copper dispersion, it is adjusted to the desired range. The surface treatment of the steps (1) to (3) can reduce the presence of copper oxide (CU2〇, Cu(7)) which is present on the surface of the copper particles as a starting material to copper atoms, and can reduce the amount of copper oxide which is a major factor hindering conductivity. Further, by-products such as a reducing agent decomposition product are usually components which are soluble in the dispersion medium. The copper particles can be separated from the components by filtration or centrifugation. Further, in the above steps (1) to (1) 3) The surface of the copper particles after surface treatment, sometimes a part of the copper atoms is reduced by the reducing agent to form copper hydride. Therefore, the surface treated copper particles may also be separated from the dispersion after 40~12 (The heat treatment is carried out under TC, whereby copper hydride is converted into copper. As described above, the "composite metal copper particles" in the present invention are those in which at least a part of the surface of the metal copper particles adheres to the metal copper particles. "Copper particles" are "copper composite particles" obtained by heating copper hydride fine particles on the surface of metallic copper particles, and converting copper hydride fine particles into metallic copper fine particles and & The presence or absence of the attached particles on the surface of the copper particles can be observed by observing the SEM image. Further, the identification of the copper chloride fine particles adhering to the surface of the copper metal particles can be performed by an X-ray diffraction apparatus (manufactured by Rigaku Corporation, TTR-III). As the metal copper particles, known copper particles which are generally used for the conductive paste can be used. The particle shape of the metal copper particles may be spherical or may be in the form of a plate 160003.doc 201232563. The average particle diameter of the particles is preferably 〇3 to 2 The metal copper particles μιη of the beryllium copper composite particles are more preferably 1 to 1 〇μιη. If the average particle diameter of the metal copper particles is 揸 仏 仏 运 0 0J μηι, the conductive paste can not be obtained to obtain sufficient flow characteristics. On the other hand, if the average particle diameter of the right metal copper particles exceeds 20 Å, it is difficult to make fine wiring by using the obtained conductive paste. The average particle size of the metal copper particles is more preferably the same. The average particle size of the metal copper particles is determined by the Feret diameter of 1GG metal copper particles randomly selected from the self-bribery image or the Wei image. The value of the Measured value is calculated on average. The copper hydride fine particles of the copper composite particles are mainly present in the form of primary particle agglomerated Me-order particles. The particles of the hydrogen (tetra) fine particles may have a spherical shape or a plate shape. The average particle diameter of the agglomerated particles of the copper hydride fine particles is preferably 20 to 4 Å, more preferably 2 (9) (10), still more preferably - Δ 00 nm. More preferably, it is 8〇~15〇nn^ If the average particle size of the agglomerated particles F of the copper hydride fine particles is less than 2〇nm, the fusion and growth of the copper hydride microparticles are likely to occur, and the volume shrinkage occurs when the conductive film is formed. The crack is equal to the shape of the bad It. On the other hand, if the average particle diameter of the agglomerated particles of the copper hydride fine particles exceeds 400 nm, the surface area of the particles is insufficient, and it is difficult to cause a surface smelting phenomenon, which makes it difficult to form a dense conductive film. The average particle diameter of the hydrogenated steel micro-soak was measured by measuring the Feret diameter of 100 hydrogenated copper fine particles randomly selected from the TEM image or the SEM image, and averaging the measured values. As the copper composite particles, it is preferable to include metal steel particles having an average primary particle diameter of 〇_3 to 20 160003.doc •19 to 201232563 μη, and an average particle size of the aggregated particles attached to the surface of the metal copper particles. Composite particles (copper composite particles (A2)) of copper hydride fine particles of 2 〇 to 4 〇〇 nm. The amount of the copper hydride fine particles attached to the surface of the metal steel particles is preferably 5 to 50 mass% of the amount of the metal copper particles. More preferably, it is 10 to 35 mass%. When the amount of the copper hydride fine particles is less than 5% by mass based on the amount of the metal copper particles, the conductive channels are not sufficiently formed between the metal copper particles, and the effect of lowering the volume resistivity of the conductive film cannot be sufficiently obtained. On the other hand, when the amount of the copper hydride fine particles is more than 50% by mass based on the amount of the metal copper particles, it is difficult to ensure sufficient fluidity as the conductive paste. Further, the amount of the copper hydride fine particles adhering to the surface of the metal copper particles is, for example, the concentration of the steel ions in the water-soluble copper compound solution to which the reducing agent is added, and the concentration of the copper ions remaining in the reaction liquid after the formation of the copper hydride fine particles is completed. Calculated by the difference. The copper composite particles can be produced, for example, by a wet reduction method including the following steps (i) to (iii): (1) a step of forming copper hydride fine particles in the reaction system (R), and (11) a reaction system (R) a step in which metal copper particles are introduced to cause the copper hydride fine particles to adhere to the surface of the metal copper particles to form "copper composite particles" (iii) a step of separating the "copper composite particles" from the reaction system (R). Heating the copper composite particles 'converts copper hydride fine particles into metal copper fine particles, whereby "composite metal steel particles" can be obtained. In the present specification, the term "reaction system (R) J refers to a system for generating copper nitride fine particles. The reaction system (foot) includes not only (01) unreacted addition of a reducing agent to a water-soluble copper compound solution. The system of the state also includes 160003.doc -20· 201232563 (β) a system in which the formation of hydrogenated steel fine particles is being performed by the reaction of the water-soluble copper compound and the reducing agent, and the formation reaction of the (γ) copper hydride fine particles is completed. The system in which the hydrogenated copper particles are formed in a dispersed state. The term "reaction system (R)" means that a water-soluble copper compound, copper ions, various anions, and copper chloride particles are present in a solvent such as water. Various ions, other residues, reducing agents or decomposition products thereof remaining in the solvent after the formation. Therefore, the dispersion liquid obtained by separating the generated copper hydride fine particles from the solution and dispersing them in a new dispersion medium does not conform to the reaction system (R) in the present specification. Hereinafter, the steps (1) to (out) for producing copper composite particles and the method for producing composite metal copper particles from the copper composite particles will be described. (1) Formation of copper hydride fine particles The reaction system (R) can be formed by adding at least a reducing agent to a water-soluble copper compound solution formed by adding a water-soluble steel compound to a solvent. As the water-soluble copper compound forming the reaction system (R), a copper salt is preferred. As the copper salt, a copper (11) ion and a mineral acid or a salt of a tickic acid are more preferably used. As the slow acid forming the copper salt, it is preferred that the carbon atom having a plurality of carbon atoms in the internal carbon number is preferably a formic acid, acetic acid or propionic acid. As the water-soluble copper compound, copper sulfate, copper lithate, copper formate, copper acetate, vaporized copper, evolved copper, moth copper, and the like are particularly preferably used. Further, the solvent of the water-soluble steel compound solution is not particularly limited as long as it is a water-soluble copper compound. As the solvent of the water-soluble steel compound solution, water is particularly preferably used. (4) Concentration phase of water-soluble copper compound contained in the solution of the copper compound 160003.doc 201232563 For solution _ mass%, difficult state ~ 3Gf4%. If the concentration of the water-soluble copper compound is less than (M mass% ', the amount of water in the solution is too large, and the production efficiency of the copper hydride fine particles is lowered. On the other hand, if the concentration of the water-soluble copper compound exceeds 30% by mass, the copper hydride fine particles are present. The yield is decreased. 2 The addition of a reducing agent to the water-soluble copper compound solution preferably adjusts the p Η value to a specific value or less. As a water-soluble copper compound solution, the pH value adjusting agent can be used as a surface-modified copper. In the description of the production steps of the particles, the acid components exemplified as the ruthenium adjusting agent for the copper dispersion are the same. Specifically, for example, citric acid, citric acid, cis-succinic acid, malonic acid, acetic acid, or C can be used. Acid, sulfuric acid, nitric acid, hydrochloric acid, etc.. As a 11-value adjusting agent for a water-soluble copper compound solution, especially formic acid, it is preferable to use formic acid because it contains a reducing brewing base (-CHO). Therefore, it is possible to remain on the surface of the particles and suppress oxidation of the copper particles. The pH of the water-soluble copper compound solution is preferably set to 3. The pH of the water-soluble copper compound solution is set to 3 or less, the production efficiency of copper hydride fine particles can be improved. It is presumed that the reduction can be carried out in a state where copper ions and hydrogen ions are mixed in a solution. If the pH of the water-soluble copper compound solution exceeds 3, it is easy. The metal copper microparticles are formed, and the formation ratio of the copper chloride microparticles is lowered. From the viewpoint of increasing the formation ratio of the copper hydride microparticles, it is more preferable to set the value of the water-soluble steel compound solution to 0.5 to 2. At least one selected from the group consisting of metal hydride 'hydrogenation reducing agent, hypophosphite, sodium hypophosphite, and the like, and at least one of amine boron, 22- 160003.doc 201232563, and formic acid, may be used. Examples of the gold hydride compound include hydrogenated hydrazine, potassium hydride, and hydrogen (IV). Examples of the hydrogenated reduction hydrazine include chlorination (tetra), hydrogenation, and a hydrogenation axis. Among these, it can be preferably used. Sub-subtree, sub-sodium complex. Further, as described above, formic acid can also be used as a valence adjusting agent, so when formic acid is added to the dispersion medium, it functions as a reducing agent. The reducing agent which functions as a ρί1 value adjusting agent is preferably added to the water-soluble copper compound solution with respect to the copper ion in the solution by an equivalent amount of 丨.2~Η). If the amount of the reducing agent is less than 12 times the amount of the copper ion, it is difficult to obtain a sufficient reduction. On the other hand, if the amount of the reduction is more than 1 G times the amount of the copper ion added When the number of the copper nitride fine particles, the content of impurities such as sodium, boron, phosphorus, etc. is increased, the reaction system and the system (R) may be dissolved in a reducing agent solution containing a solvent such as a reducing agent and water. The copper compound solution is mixed and formed. Further, the reaction system (R) can be formed by adding a reducing agent in a solid state to a solution of a water-soluble copper compound. In the reaction system (8) formed in this manner, copper ions are acidic. Under the conditions, it is reduced by a reducing agent to form copper hydride microparticles ' and the particles are grown. (H) Formation of copper composite particles Metal copper particles are introduced into the reaction system (R) formed in the above (1), and hydrogenated copper fine particles are adhered to the surface of the metal copper particles to form "steel composite particles". First, metal copper particles are put into a reaction system (foot). Further, the shape and particle diameter of the metallic copper particles are as described above. 160003.doc • 23- 201232563 Metal steel particles are preferably added to the reverse (R) of the stage in which copper ions are present, or in a solution of a water-soluble steel compound. The core... The copper ion reduction reaction can be carried out in the environment in which the metal steel particles and the copper hydride fine particles coexist in the reaction system (8) in which the steel ions are present. Therefore, the shape of the metal copper particles and the chlorinated steel particles can be combined. The presence or absence of copper ions in the reaction system (8) can be determined by the concentration of the copper ion electrode or the concentration of copper ions in the visible light absorption spectrum. Further, the presence or absence of copper ions can be confirmed by measurement of the oxidation reduction potential of the aqueous solution. Namely, the metal copper particles are preferably added to the reaction system (R) in which the copper hydride fine particles are being formed. Alternatively, it is preferred to add a metal copper particle to the water-soluble copper compound solution before the addition of the reducing agent, and then add a reducing agent to form a reaction system (R). It is preferred to add metal steel particles to the reaction system (R) which is generating hydrogenated steel fine particles. Further, the reaction system (11) to which metal copper particles are added is not limited to the above state. For example, the reaction system (r) in which the amount of copper ions or the amount of reduction in the reaction system (R) is reduced by the reduction reaction, and the growth of the copper hydride fine particles after the formation or formation of the copper hydride fine particles is stopped may be stopped. The addition of metallic copper particles, that is, the reaction system (R) in which the metal copper particles can be supplied to the copper hydride microparticles, or the reaction system (R) which is generating the copper hydride microparticles can be put into the hydrogen hydride microparticles. In the reaction system (R). By adding metallic copper particles to the reaction system (R), the copper-copper particles can be attached to the surface of the metal copper, and 160003.doc -24 * 201232563 "copper composite particles" can be formed in the reaction system (R). The amount of copper ions contained in the reaction system (8) to which the metal copper particles are added is preferably from 1 to 100% by mass, based on the amount of copper ions of the water-soluble copper compound solution before the addition of the reducing agent. More preferably 5 to 100 mass. /. . Further, the copper in the water-soluble copper compound solution is ionized. The temperature of the reaction system (R) is preferably. Hirose, τ, Ping and the residence 60 C U. By setting the temperature of the reaction system (R) to 60 ° C or lower, ότ* female nitlc: also inhibits the decomposition of the copper hydride microparticles in the reaction system (R). The metal copper particles are preferably added in a state where the oxidation-reduction potential of the reaction system (8) is in the range of 100 300 mV aHE, more preferably in the range of 1 〇〇 to 22 〇 mV SHE. "Survey" refers to a standard hydrogen electrode. Further, "claw 乂 she" is an oxidation-reduction potential measured without using a quasi-hydrogen electrode as a reference. In this paper, the measured value of the reduction potential in the Moon is determined by using a standard hydrogen electrode as a reference. (.iii) Separation of copper composite particles The copper composite particles formed in the reaction system (R) are separated from the reaction system (R). The method of separating the copper composite particles from the reaction system (R) is not particularly limited. As a method of separating the copper composite particles from the reaction system (R), for example, powdery copper composite particles can be separated from the reaction system by centrifugal separation or filtration. After the copper composite particles are separated from the reaction system, the cleaning impurities adhering to the surface of the particles are removed by washing with a cleaning liquid such as water. By subjecting the separated copper composite particles to purification treatment in the above-described manner, the powdery copper composite particles having copper hydride fine particles adhered to the surface of the metal copper particles can be obtained by purifying the separated copper composite particles by the above-mentioned method 160003.doc *25-201232563. Further, the solvent of the reaction system (11) may be replaced before the separation of the copper composite particles, and impurities such as decomposition products of the reducing agent may be removed together with the solvent. The copper composite particles separated from the reaction system (R) are subjected to heat treatment to convert the copper hydride fine particles into metal copper fine particles, whereby composite metal copper particles having a surface oxygen concentration ratio of O/Cu of 0.5 or less can be obtained. The composite metal copper particles can form a conductive path reliably by the metal copper particles present between the metal copper particles, thereby reducing the volume resistivity when the conductive film is formed. Further, as described above, by converting the copper hydride fine particles into the metal copper fine particles, it is difficult to cause the metal copper fine particles to be peeled off from the metallic copper particles. Therefore, by dispersing the metallic copper fine particles in the conductive paste, a conductive paste in which the viscosity of the conductive paste is suppressed from rising can be obtained. The heat treatment of the copper composite particles is preferably carried out at a temperature of 6 Torr to 12 Torr. If the heating temperature exceeds 120. (:, the metal steel fine particles are easily fused to each other, and the volume resistivity when the conductive film is formed becomes high. On the other hand, if the heating temperature is less than 60, the time required for the heat treatment becomes long' It is not preferable in terms of manufacturing cost. The heat treatment of the copper composite particles is more preferably carried out at 6 Torr to 1 Torr, and more preferably at 60 to 90. Further, the heat treatment is carried out. The residual moisture content of the composite metal copper particles is preferably 3% by mass or less, more preferably 5% by mass or less. The heat treatment of the copper composite particles is preferably carried out under a reduced pressure of _i〇U ^ under a relative pressure. If the heating is performed under a pressure greater than I60003.doc -26 - 201232563, the time required for drying becomes longer, which is not good in terms of manufacturing cost. Another aspect is that if the pressure during heat treatment is not satisfactory For example, the removal and drying of a multi-audio agent such as water requires the use of a large device, which in turn makes the manufacturing cost high. The surface oxygen concentration ratio o/cu of the "composite metal copper particles" can be adjusted by the steps (1) to (iv) above. Water soluble copper compound The oxidation-reduction potential of the reaction system (8), the temperature of the reaction system (R), or the like, or the partial pressure of oxygen during the heat treatment of the copper composite particles, etc., and adjusted to the required range: obtained by the above steps. The average-secondary particle diameter of the metallic copper particles of the composite metallic copper particles is preferably 〇.3 to 2 〇 (4). Further, the average particle diameter of the particles of the metallic copper fine particles attached to the surface of the metallic copper particles is preferably 20 〜 400 nm (composite metal copper particles (A4)) If the average particle diameter of the metal copper particles of the "composite metal copper particles" is less than (3) Km, sufficient flow characteristics cannot be obtained when the conductive paste is formed. On the other hand, when the average particle diameter of the metal copper particles exceeds 2 pm, it is difficult to form fine wiring by the obtained conductive paste. The average particle diameter of the metal copper particles in the "composite metal steel particles" is preferably 1 to 1 〇μηι. Similarly to the copper hydride microparticles in the copper composite particles, the copper microparticles of the "composite metal copper particles" are mainly in the form of secondary particles in which primary particles of about nm are aggregated. The particle shape of the copper microparticles can be The spherical shape may be a plate shape. If the average particle diameter of the agglomerated particles of the copper microparticles is less than 2 nm, the copper microparticles are likely to be fused and grown, and cracks accompanying volume shrinkage occur when the conductive crucible is formed. In the case of a bad situation. Another 160003.doc -27· 201232563 Aspects: If the average particle size of the agglomerated particles of copper particles exceeds _, the product is not sufficient, and it is difficult to generate the phenomenon of the table (4), so that dense conductive is formed. The film becomes difficult. The average particle diameter of the agglomerated particles of the copper microparticles is more preferably 30 to 3 〇 0 nm, more preferably 5 〇 to 2 〇〇 nm. More preferably, the average particle diameter of the metal steel particles is from the side. The Feret's (FeM) diameter of 100 metal copper particles randomly selected from the image of (4) was measured and averaged. In other words, the average particle diameter of the copper microparticles is calculated by averaging the measured values of the (10) hydrogenated copper microparticles randomly selected from the image or the SEM image. As the other copper particles (A)', hydrogenated copper microparticles (A3) and hydrogenated copper microparticles (A3) having an average particle diameter of aggregated particles of 10 nm to i μm may be preferably used, for example, "Kelly composite particles" It is formed by the solution of the water-soluble copper compound used in the manufacturing process. Specifically, it can be obtained, for example, by a pH of 3 or less and an oxidation-reduction potential of 1 〇〇 to 3 〇〇 mV SHE, preferably 1 〇〇 to 220 mV 81 ^. It is obtained by adding a reducing agent to the solution of the water-soluble copper compound. As the reducing agent, the same as the reducing agent used in the production step of the "copper composite particles" can be used. Further, the average particle diameter of the agglomerated particles of the hydrogenated fine particles can be adjusted by controlling the reaction temperature or the reaction time at the time of the reduction reaction or by adding a dispersing agent. As the copper particles (A)', the metal steel fine particles (A5) obtained by heat-treating the hydrogenated steel fine particles (A3) are preferably used. Namely, as the copper particles (A)', the average particle diameter of the aggregated particles is preferably 1 〇 nm to i ^ claws. 160003.doc • 28 · 201232563 Metallic copper microparticles (A5). Further, the method of obtaining the copper particles (A) having a surface oxygen concentration ratio of O/Cu of 0.5 or less is not limited to the method using wet reduction as described above. As a method of obtaining copper particles having a surface oxygen concentration ratio of 〇/Cu of 0.5 or less, for example, an oxide film formed on the surface of the copper powder may be washed with an acid such as hydrochloric acid, sulfuric acid or nitric acid to dissolve and remove the oxide film. Further, 'as a method for obtaining copper particles (A) having a surface oxygen concentration ratio of O/Cu of 0.5 or less', in addition to the above method, for example, by introducing a reducing gas into the surface of the copper particles, copper may be added to the gas. The particles are subjected to heat treatment or the like. Specifically, for example, first, a reducing gas such as hydrogen gas, carbon monoxide, natural gas, or ammonia decomposition gas is introduced, or the inside is made a vacuum, thereby reducing the inside of the reduction furnace into a reducing atmosphere. Then, copper particles f are added to the reduction furnace, and the steel particles are subjected to a reduction treatment in a temperature range of 120 to 400 C, whereby the oxide on the surface of the particles can be removed. Also as an alternative method of using a reducing gas, it can also be inert

進行電漿處理之方法,對銅粒子表面進行還原處理。The surface of the copper particles is subjected to a reduction treatment by a plasma treatment method.

160003.doc >下部電極3上之固體介電體6上配置被處 藉此可對該銅粒子表面進行還原處理。 -29· 201232563 又’作為調整銅粒子之表面氧濃度之其他方法,亦可藉 由在混合銅粒子、下述螯合劑(B)、熱硬化性樹脂(c)等 時’使用二輥研磨機或珠磨機對混合物(糊)整體進行授拌 而進行。 螯合劑(B)係可配位於銅離子,藉由下述式(1)所示之反 應與銅離子形成錯合物之化合物。 [數1] …⑴ 其中,式中之符號表示下述含義。 Μ :銅離子 Ζ :螯合劑(Β) ΜΖ :錯鹽 X :與1個銅鍵結之螯合劑(Β)數 螯合劑(Β)係於25t、離子強度(M mol/L之條件下,當 上述式〇)之X=1之情形時與銅離子之穩定度常數i〇gKcu為 5〜15之化合物。穩定度常數logKcu係表示整合劑與金屬之 鍵結力之強度的指標。穩定度常數lGgKeu可作為上述式⑴ 所不反應式之平衡常數KCui對數值而求得。具體而古, KCu可藉由下述式(2)而求得。 [數2] K - ίΜΖχ] [Μ].[Ζ]Χ 160003.doc -30- 201232563 (其中’於上述式(2)中,□係表示括號内之各成分之濃度)。 關於本發明中之「穩定度常數l〇gKCu」,作為各種化合 物之具體數值’例如記載於化學便覽(丸善)、StabiHty Constants of Metal-Ion Complexes(PERGAMON PRESS) '160003.doc > The solid dielectric body 6 on the lower electrode 3 is disposed to thereby reduce the surface of the copper particles. -29· 201232563 In addition, as another method of adjusting the surface oxygen concentration of copper particles, a two-roll mill can be used by mixing copper particles, the following chelating agent (B), and thermosetting resin (c). Or the bead mill performs the mixing of the mixture (paste) as a whole. The chelating agent (B) is a compound which can be coordinated to a copper ion to form a complex with copper ions by a reaction represented by the following formula (1). [Equation 1] (1) wherein the symbols in the formula represent the following meanings. Μ : Copper ion Ζ: chelating agent (Β) ΜΖ : wrong salt X: a copper-bonded chelating agent (Β) number chelating agent (Β) is at 25t, ionic strength (M mol / L, When X = 1 of the above formula 〇), the stability constant i 〇 gKcu with copper ions is 5 to 15 compounds. The stability constant logKcu is an index indicating the strength of the bonding force between the integrator and the metal. The stability constant lGgKeu can be obtained as a logarithmic value of the equilibrium constant KCui of the non-reactive formula of the above formula (1). Specifically, KCu can be obtained by the following formula (2). [Number 2] K - ΜΖχ] [Μ]. [Ζ] Χ 160003.doc -30- 201232563 (wherein in the above formula (2), □ indicates the concentration of each component in parentheses). The "stability constant l〇gKCu" in the present invention is described as a specific numerical value of various compounds, for example, in the chemical handbook (Maruzen) and StabiHty Constants of Metal-Ion Complexes (PERGAMON PRESS).

Journal of Chemical Engineering Data(ACS Publications)等 文獻中。 吾等認為,藉由調配與銅離子之穩定度常數1〇gKcu為5 以上之化5物作為螯合劑(B),可使糊内產生之銅離子之 至少一部分與螯合劑(B)形成錯合物。因此,可降低與大 軋中之水分或例如〇2、HW等中所含之氧等反應之銅離子 里,從而可抑制於糊内形成氧化銅。又,螯合劑(B)難以 與銅離子解離,故即便放置於高濕度之環境下,亦可長時 間維持錯合物之狀態。因此,可製成能夠形成難以形成氧 化覆膜而體積電阻率之上升得到抑制之導電膜的導電糊。 若螯合劑(B)之穩定度常數l〇gKcu未達5,則對銅離子之 鍵結力不充分,因此無法充分降低與大氣中之水分或氧等 反應之銅離子量,&而難以抑制氧化銅之生成。又,若整 合劑(B)之穩定度常數丨ogKcu超過丨5,則存在螯合劑(b)對 銅離子之鍵結力過強,阻礙銅粒子彼此間之接觸而降低導 電性之虞。推斷其原因在於,螯合劑(B)不僅作用於銅粒 子表面存在之銅離子,而且亦作用於銅(金屬銅)。穩定度 常數logKCu更佳為7〜14。 a 作為整合劑(B),可較佳地使用將含有氣原子之官能基 ⑷興含有氮原子以外之具有孤立電子對之原子的心 I60003.doc •31 - 201232563 ⑻配置於芳香環之鄰位,且宫能基⑷之「氮原子」與官 能基(b)之厂具有孤立電子對之原子」介隔二或三個肩子而 鍵結的芳香族化合物。藉由調配具有上述分子結構之ρ 物作為聲合劑⑻,可形成與銅離子穩定之錯合物。σ 作為介於宫能基⑷之厂氮原子」與官能基⑻之「且有 孤立電子對之原子」間的原子,可列舉碳原子。' 能I上=香族化合物中’作為螯合劑⑻,適宜使用官 月&暴(a)之氮原子與官能其 隔二或三個碳原子而鍵結者。 立電子對之原子介 二=具有孤立電子對之氮原子以外之原子的官能基 (b)而較佳者例如可列舉羥基、或羧基。 酸具作為螯合劑⑻’例如可❹選自水揚經月亏 物。W鄰胺基苯紛、水揚酸中之至少—種化合 化::二:㈣作為聲合劑⑻之情形時,可藉由下述 [化η …應而形成與銅離子之錯合物。Journal of Chemical Engineering Data (ACS Publications) and other literature. We believe that at least a part of the copper ions generated in the paste and the chelating agent (B) can be formed by blending a compound having a stability constant of 1 〇gKcu of 5 〇gKcu with copper ions as a chelating agent (B). Compound. Therefore, it is possible to reduce the formation of copper oxide in the paste by reducing the amount of water in the large rolling or the copper ions which are reacted with oxygen contained in, for example, ruthenium 2, HW or the like. Further, since the chelating agent (B) is hardly dissociated from the copper ions, the state of the complex compound can be maintained for a long period of time even when placed in a high humidity environment. Therefore, it is possible to form a conductive paste which can form a conductive film which is difficult to form an oxide film and which suppresses an increase in volume resistivity. If the stability constant l〇gKcu of the chelating agent (B) is less than 5, the bonding strength to copper ions is insufficient, and thus the amount of copper ions which react with moisture or oxygen in the atmosphere cannot be sufficiently reduced, and it is difficult to Inhibit the formation of copper oxide. Further, when the stability constant 丨 ogKcu of the condensing agent (B) exceeds 丨5, the bonding force of the chelating agent (b) to the copper ions is too strong, and the contact between the copper particles is inhibited to lower the conductivity. It is presumed that the chelating agent (B) acts not only on the copper ions present on the surface of the copper particles but also on the copper (metal copper). The stability constant logKCu is preferably 7 to 14. a as the integrator (B), it is preferred to use a functional group (4) containing a gas atom to contain an atom having an isolated electron pair other than a nitrogen atom. I60003.doc • 31 - 201232563 (8) is disposed in the ortho position of the aromatic ring. And the "nitrogen atom" of the uterine energy group (4) and the functional group (b) have an atomic group of atoms of an isolated electron pair, which are bonded by two or three shoulders. By compounding the ρ having the above molecular structure as the sound aggregating agent (8), a complex which is stable with copper ions can be formed. σ is an atom between the nitrogen atom of the plant of the uterine energy (4) and the atom of the functional group (8) and having an isolated electron pair, and examples thereof include a carbon atom. As the chelating agent (8), it is suitable to use a nitrogen atom of the sulphur (a) and a functional group which is bonded by two or three carbon atoms. The atomic group of the pair of electrons is a functional group (b) having an atom other than the nitrogen atom of the isolated electron pair, and a hydroxyl group or a carboxyl group is preferable. The acid device as a chelating agent (8)' can be selected, for example, from a water-saving month. At least one of W-o-aminobenzene and salicylic acid: 2: (4) In the case of a sound-mixing agent (8), a complex with copper ions can be formed by the following [?].

CcCc

(I) 導電糊中> X 份,較佔炎 σ W(B)之含量相對於銅粒子(A)l〇〇質量 量份,則/別〜1f量份°若螯合劑(B)之含量未達0.01質 子在製成導電膜時,無法充分獲得抑制體積電阻 160003.doc •32- 201232563 率上升之效果之虞。另一方面,若螯合劑(B)之含量超過t 質量份,則存在阻礙銅粒子彼此間之接觸,降低導電性之 虞。 作為熱硬化性樹脂(c),只要為可於通常之硬化溫度下 充分硬化者,則可使用用作導電糊之樹脂黏合劑之公知的 熱硬化性樹脂》 作為熱硬化性樹脂(C),例如可較佳地使用酚樹脂、鄰 苯二曱酸二烯丙酯樹脂、不飽和醇酸樹脂、環氧樹脂、胺 酯樹脂、雙順丁烯二醯亞胺三畊樹脂、聚矽氧樹脂、丙烯 酸系樹脂、三聚氰胺樹脂、尿素樹脂等。該等之中,尤其 適宜使用酚樹脂。 熱硬化性樹脂(C)可於硬化後之樹脂成分不抑制導電性 之範圍内添加。導電糊中之熱硬化性樹脂之含量可根 據銅粒子之體積與存在於銅粒子間之空隙體積之比率而適 當選擇。 導電糊中之熱硬化性樹脂(C)之含量通常相對於銅粒子 (A)粉末100質量份,較佳為5〜5〇質量份,更佳為5〜2〇質量 份。若熱硬化性樹脂之含量未達5質量份,則難以獲得作 為糊體而充分之流動特性。另一方面,若熱硬化性樹脂之 含量超過50質量份’則存在由於硬化後之樹脂成分而妨礙 銅粒子間之接觸,從而導致導電體之體積電阻率上升之 虞。 本發明之導電糊除上述(A)〜(C)之成分以外,亦可於不 損害本發明之效果之範圍内視需要含有溶劑或各種添加劑 160003.doc •33· 201232563 (調平劑、偶合劑、黏度調整劑、抗氧化劑等)等其他成 分。尤其是為獲得具有適度流動性之糊體,較佳為含有能 夠溶解熱硬化性樹脂(c)之溶劑。 作為導電糊中含有之溶劑,例如可較佳地使用:環己 嗣、環己醇、松油醇、乙二醇、乙二醇單乙峻、乙二醇單 丁醚、乙二醇單乙醚乙酸酯' 乙二醇單丁醚乙酸酯、二乙 二醇、二乙:醇單乙醚、三乙二醇單頂、二乙二醇單乙 醚乙S夂g曰一乙一醇單丁醚乙酸酯。作為印刷用糊體,就 設為適度之黏度範圍之觀點而言,導電糊所含有之溶劑量 車父佳為相對於鋼粒子為1〜質量%。 導電糊可將上述(A)〜m夕欠a、v fc a Μ) (l)之各成分與溶劑等其他成分混 合而獲得。 〇上述(A) (C)之各成分時,可於不產生熱硬化性樹 脂之硬化或溶劑之揮發之程度的溫度下—面加熱一面進 行。混合、攪拌時之溫度較佳為設為1〇〜赋。更佳為設 為2〇〜赋。藉由在形成導電糊時設為HTC以上之溫度, 可充分降低糊之黏度’從而可順利且充分地進行攪拌。 又’可使銅粒子表面所生成之氫化鋼變成鋼原子。另一方 面,若形成導電糊時之溫度超過120。(:,則有於糊中產生 熱硬化性樹脂(C)之硬化或產生粒子彼此間之融合之虞。 再者’為防止混合時銅粒子發生氧化,較佳為於經惰性 氣體置換之容器内進行混合。 以上說明之本發明> it办j, 發月之導電糊即便於大氣中亦難以氧化, 與先前之導電糊相比,可形成由生成氧化銅引起之體積電 160003.doc •34- 201232563 阻率之上升得到抑制的導電膜。 本發明之附導電膜基材1 〇例如可以如下方式製造。即, 如圖2所示,將上述導電糊塗怖於基材"之表面而形成導 電糊膜。然後’於去除溶劑等揮發性成分後,使熱硬化性 樹脂(C)硬化,於基材1!上形成導雷 工〜风導電膜12,藉此可製造本 發明之附導電膜基材10。 作為基材U ’可使用:玻璃基板、塑縣材、纖維強化 複合材料、陶莞基板等。作為纖維強化複合材料,可列舉 玻璃纖維強化樹脂基板等,作為塑膠基材例如可列舉包 含聚醯亞胺膜、聚酯膜等膜狀之基板等。 尤其是,可較佳地使用印刷配線板中使用之玻璃纖維強 化%.氧樹脂基板等。 作為導電糊之塗佈方法 玉吓乃.沄可列舉·絲網印刷法、輥塗 法、氣刀塗佈法、刮刀塗佈法基 , w 释式塗佈法、凹版印刷塗 伟法、模塗法、斜板塗佈法等公知之方法。 其令It於基材11上有效地形成表面及側面之凹凸發生 得到’抑制的平滑之配線形狀镚 尺〜狀之硯點而吕,適宜使用絲網印 刷法。 熱硬化性樹脂(C)之硬化可藉由將形成導電糊膜之基材 11保持於1〇0〜續之溫度下而進行。若硬化溫度未達 =〇c ’則難以使熱硬化性樹脂充分地硬化。另一方面, 若硬化溫度超過30(Tr,目丨丨认技a ^ 貝丨於使用以塑膠薄膜等熱塑性樹 脂而形成之基材11之情形時’存在基材11發生變形之虞。 作為硬化方法,可列舉溫風加熱、熱輕射等方法。再者, 160003.doc. •35· 201232563 亦可於氧量較少之氮氣環 導電膜之形成可於大氣中進行 境下等進行。 導電膜12之體積電阻率較佳為 電膜i2之體積電阻率超過10 一 & i2cm,則存在無法獲得 作為電子設備用冑電體而充分之導電性之虞。 就確保穩定之導電性,日六 电Γ生且合易維持配線形狀之觀點而 言’基材U上之導電膜12之厚度較佳為!〜200 μΐΏ,更佳為 5~ 1 00 μηι。 本發明之附導電膜基材係❹上述本發明之導電糊而形 成導電膜’故可製成難以生成由氧化銅引起之氧化覆膜, 與先前之料電㈣材相比體積電阻率較低,並且即便於 尚濕度之環境下長期使用,亦可抑制體積電阻率之上升的 附導電膜基材。 以上,列舉一例對本發明之附導電膜基材進行了說明, 又,可於不違背本發明之主旨之限度内視需要適當變更構 成。又,於本發明之附導電膜基材之製造方法中,各部分 之形成順序等亦可於能夠製造附導電膜基材之限度内適當 進行變更。 田 [實施例] 以下’藉由實施例對本發明進一步詳細說明。 首先,獲得對鋼粒子實施還原處理之銅粒子(Α)(表面改 質銅粒子)。即,向玻璃製燒杯中投入甲酸3〇 §及5〇 wt% 次亞磷酸水溶液9·〇 g,將該燒杯放入水浴中,保持於 40 c。向該燒杯内緩緩添加銅粒子(三井金屬礦業公司製 160003.doc -36- 201232563 造’商品名:「1400YP」,平均一次粒徑:7 μηι)5.0 g,攪 拌30分鐘,獲得「銅分散液」。使用離心分離器,以轉速 3 000 rpm進行1〇分鐘離心分離,由所得之「銅分散液」回 收沈澱物。使該沈澱物分散於蒸餾水3 〇 g中,藉由離心分 離再次使凝聚物沈澱,分離沈澱物。將所得之沈澱物於_3 5 kPa之減壓下,以8〇。(:加熱60分鐘,使殘留水分揮發將其 逐漸去除’獲得粒子表面經表面改質之銅粒子(A_ 1)。 藉由X射線光電子光譜分析裝置(ULVAC-PHI公司製造, 商品名:「ESCA5500」)’於下述條件下對所得之銅粒子 (A_1)進行表面氧濃度[原子%],及表面銅濃度[原子%]之 測定。(I) In the conductive paste > X parts, which is more than the content of the inflammatory σ W (B) relative to the copper particles (A) l 〇〇 , 则 别 别 别 1 1 1 1 1 1 若 若 若 若 若 若 若When the content is less than 0.01 protons, when the conductive film is formed, the effect of suppressing the increase in the volume resistance of 160003.doc •32-201232563 cannot be sufficiently obtained. On the other hand, when the content of the chelating agent (B) exceeds t by mass, there is a possibility that the contact between the copper particles is inhibited and the conductivity is lowered. The thermosetting resin (C) can be used as a thermosetting resin (C), as long as it can be sufficiently cured at a normal curing temperature, and a known thermosetting resin used as a resin binder of a conductive paste can be used. For example, a phenol resin, a diallyl phthalate resin, an unsaturated alkyd resin, an epoxy resin, an amine ester resin, a bis-methylene iodide tri-n-resin, and a polyoxyn resin can be preferably used. Acrylic resin, melamine resin, urea resin, and the like. Among these, phenol resins are particularly preferably used. The thermosetting resin (C) can be added within a range in which the resin component after curing does not inhibit conductivity. The content of the thermosetting resin in the conductive paste can be appropriately selected in accordance with the ratio of the volume of the copper particles to the void volume existing between the copper particles. The content of the thermosetting resin (C) in the conductive paste is usually 5 to 5 parts by mass, more preferably 5 to 2 parts by mass, per 100 parts by mass of the copper particles (A) powder. When the content of the thermosetting resin is less than 5 parts by mass, it is difficult to obtain sufficient flow characteristics as a paste. On the other hand, when the content of the thermosetting resin exceeds 50 parts by mass, the contact between the copper particles is hindered by the resin component after the curing, and the volume resistivity of the conductor is increased. In addition to the components (A) to (C) above, the conductive paste of the present invention may contain a solvent or various additives as needed within a range not impairing the effects of the present invention. 160003.doc •33· 201232563 (Leveling agent, even Other ingredients such as mixture, viscosity modifier, antioxidant, etc.). In particular, in order to obtain a paste having moderate fluidity, it is preferred to contain a solvent capable of dissolving the thermosetting resin (c). As the solvent contained in the conductive paste, for example, cyclohexanone, cyclohexanol, terpineol, ethylene glycol, ethylene glycol monoethyl sulphate, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether can be preferably used. Acetate's ethylene glycol monobutyl ether acetate, diethylene glycol, diethylene: alcohol monoethyl ether, triethylene glycol monotop, diethylene glycol monoethyl ether, ethyl S, g, monoethyl ether, monobutyl ether Acetate. As a paste for printing, the amount of the solvent contained in the conductive paste is preferably 1 to 3% by mass based on the steel particles from the viewpoint of an appropriate viscosity range. The conductive paste can be obtained by mixing the components of the above (A) to m owing a, v fc a Μ) (l) with other components such as a solvent. When the components of the above (A) and (C) are used, they can be heated while the surface of the thermosetting resin is hardened or the solvent is volatilized. The temperature at the time of mixing and stirring is preferably set to 1 〇 to fu. More preferably set to 2〇~ Fu. By setting the temperature of HTC or higher when the conductive paste is formed, the viscosity of the paste can be sufficiently lowered, and the stirring can be smoothly and sufficiently performed. Further, the hydrogenated steel formed on the surface of the copper particles can be made into a steel atom. On the other hand, if the conductive paste is formed, the temperature exceeds 120. (:, there is a hardening of the thermosetting resin (C) in the paste or a fusion of the particles. Further, in order to prevent oxidation of the copper particles during mixing, it is preferably a container substituted with an inert gas. The present invention is described above. The present invention described above, the conductive paste of the moon is difficult to oxidize even in the atmosphere, and the volumetric electricity caused by the formation of copper oxide can be formed as compared with the previous conductive paste. 34-201232563 Conductive film in which the increase in resistivity is suppressed. The conductive film substrate 1 of the present invention can be produced, for example, in the following manner, that is, as shown in Fig. 2, the conductive paste is applied to the surface of the substrate. A conductive paste film is formed. Then, after removing volatile components such as a solvent, the thermosetting resin (C) is cured to form a lightning conductive to wind conductive film 12 on the substrate 1!, whereby the present invention can be manufactured. The conductive film substrate 10 can be used as the substrate U': a glass substrate, a plastic material, a fiber-reinforced composite material, a ceramic substrate, etc. Examples of the fiber-reinforced composite material include a glass fiber-reinforced resin substrate and the like. For example, a film-form substrate such as a polyimide film or a polyester film can be used. In particular, a glass fiber reinforced resin used in a printed wiring board, an oxy resin substrate, or the like can be preferably used. Cloth method jade scare. 沄 can be enumerated · screen printing method, roll coating method, air knife coating method, knife coating method base, w release coating method, gravure coating method, die coating method, swash plate A well-known method, such as a coating method, is used, and it is effective to form the surface and the unevenness on the side surface of the substrate 11 to obtain a smoothed wiring shape which is suppressed, and a screen printing method is suitably used. The hardening of the thermosetting resin (C) can be carried out by maintaining the substrate 11 on which the conductive paste film is formed at a temperature of from 1 to 0. If the curing temperature is less than 〇c ', it is difficult to make the thermosetting resin. On the other hand, if the hardening temperature exceeds 30 (Tr, it is known that the substrate 11 is deformed when a substrate 11 formed of a thermoplastic resin such as a plastic film is used.作为. As a hardening method, warm air heating and heat can be cited. In addition, 160003.doc. •35· 201232563 It is also possible to carry out the formation of a nitrogen ring conductive film having a small amount of oxygen in the atmosphere. The volume resistivity of the conductive film 12 is preferably electric. When the volume resistivity of the film i2 exceeds 10% & i2cm, there is a possibility that sufficient conductivity can be obtained as a tantalum for an electronic device. To ensure stable conductivity, the electric wire can be easily maintained and the wire shape can be maintained. In view of the above, the thickness of the conductive film 12 on the substrate U is preferably 〜200 μΐΏ, more preferably 5 to 100 μηι. The conductive film substrate of the present invention is formed by the above-described conductive paste of the present invention. The conductive film' can be made to be difficult to form an oxide film caused by copper oxide. Compared with the previous material (four), the volume resistivity is low, and the volume resistivity can be suppressed even if it is used for a long period of time in an environment of humidity. The rising conductive film substrate. In the above, the conductive film substrate of the present invention has been described as an example, and the composition can be appropriately changed as needed within the limits of the gist of the present invention. Further, in the method for producing a conductive film substrate of the present invention, the order of formation of the respective portions or the like may be appropriately changed within the limits of the production of the conductive film substrate. Field [Examples] Hereinafter, the present invention will be described in further detail by way of examples. First, copper particles (surface-modified copper particles) which are subjected to reduction treatment on steel particles are obtained. Namely, a formic acid 3 〇 and a 5 〇 wt% aqueous solution of hypophosphorous acid 9·〇 g were placed in a glass beaker, and the beaker was placed in a water bath and kept at 40 c. Copper particles (made by Mitsui Mining Co., Ltd., 160003.doc -36-201232563, manufactured under the trade name: "1400YP", average primary particle size: 7 μηι) 5.0 g, and stirred for 30 minutes were obtained. liquid". The pellet was centrifuged at a speed of 3 000 rpm for 1 minute using a centrifugal separator, and the precipitate was recovered from the obtained "copper dispersion". The precipitate was dispersed in distilled water 3 〇 g, and the aggregate was again precipitated by centrifugation to separate the precipitate. The resulting precipitate was subjected to a reduced pressure of _3 5 kPa at 8 Torr. (: heating for 60 minutes, volatilizing the residual water to gradually remove it - obtaining copper particles (A-1) whose surface is surface-modified. By X-ray photoelectron spectroscopy apparatus (manufactured by ULVAC-PHI, trade name: "ESCA5500 ") The obtained copper particles (A_1) were subjected to measurement of surface oxygen concentration [atomic %] and surface copper concentration [atomic %] under the following conditions.

•分析面積:800 mm2<D •通能(Pass Energy) : 93.9 eV •能階(Energy Step) : 0_8 eV/step 扣所付之表面氧濃度除以表面銅濃度,算出表面氧濃度 比O/Cu,結果銅粒子(八_丨)之表面氧濃度比〇/以為〇.16。 再者’利用氧量計(LECO公司製造,商 600」)對銅粒子(A-1)中之氧量進行測定,) ,商品名:「ROH- ,結果氧量為460 ppm 〇 (實施例1) 向混合酚樹脂(群榮化學公司製• Analysis area: 800 mm2 < D • Pass Energy: 93.9 eV • Energy Step: 0_8 eV/step The surface oxygen concentration of the buckle is divided by the surface copper concentration to calculate the surface oxygen concentration ratio O/ Cu, as a result, the surface oxygen concentration ratio 〇/16 of the copper particles (eight 丨) was found to be 〇.16. In addition, the amount of oxygen in the copper particles (A-1) was measured by an oxygen meter (manufactured by LECO Co., Ltd.), and the product name was "ROH-, and the amount of oxygen was 460 ppm." 1) To a mixed phenol resin (manufactured by Qun Rong Chemical Co., Ltd.)

中調配銅粒子(A-1)5.0 g, ,商品名:「Resitop 丁醚乙酸酯0.43 g而成之樹脂 5 g ’使其溶解。向該樹脂溶液 於研缽中加以混合而獲得導電 160003.doc -37- 201232563 糊1 ο 利用絲網印刷法,將該導電糊1於玻璃基板上塗佈成寬 度1 mm、厚度20 μηι之帶狀之配線形狀,於1 5〇°C下加熱 3 〇分鐘使酚樹脂硬化,形成包含導電膜1之附導電膜基板 (實施例2) 除將水楊羥肟酸之調配量變更為0.0125 g以外,與實施 例1同樣地獲得導電糊2。 (實施例3) 除以水楊醛肟0.025 g代替水楊羥肟酸〇 〇〇5 g添加於樹脂 /谷液中以外’與實施例1同樣地獲得導電糊3。 (實施例4) 同樣地獲得導電糊4。 (實施例5) 除將水楊醛肟之調配量變更為〇 〇125 g以外,與實施例Medium-sized copper particles (A-1) 5.0 g, and trade name: "Resitop butane acetate 0.43 g of resin 5 g' was dissolved. The resin solution was mixed in a mortar to obtain conductive 160003. .doc -37- 201232563 Paste 1 ο The conductive paste 1 is applied to a glass substrate by a screen printing method to form a strip shape having a width of 1 mm and a thickness of 20 μm, and is heated at 15 ° C. The phenol resin was hardened to form a conductive film substrate including the conductive film 1 (Example 2). The conductive paste 2 was obtained in the same manner as in Example 1 except that the amount of the salicylic acid was changed to 0.0125 g. 3) A conductive paste 3 was obtained in the same manner as in Example 1 except that 0.025 g of salicylaldehyde oxime was used instead of 5 g of salicyl hydroxamate ruthenium in the resin/gluten solution. (Example 4) A conductive paste 4 was obtained in the same manner. Example 5) Example except that the amount of salicylaldoxime was changed to 〇〇125 g

§添加於 (貫施例6 ) g添加於樹脂 除以水楊酸0.0125 g代替水楊羥肟酸〇〇〇5 溶液中以外,與實施例丨同樣地獲得導電糊6 (比較例1) g以外,與實施 除不於樹脂溶液中添加水楊羥肟酸〇〇〇5 例1同樣地獲得導電糊7。 (比較例2) 160003.doc •38- 201232563 除以水楊酼肼0.0125 g代替水楊羥肟酸0.005 g添加於樹 脂溶液中以外,與實施例1同樣地獲得導電糊8。 (比較例3) 除以松香酸0.0125 g代替水楊羥肟酸0.005 g添加於樹脂 溶液中以外,與實施例1同樣地獲得導電糊9。 除向玻璃基板上塗佈導電糊2〜6代替導電糊1而形成導電 膜2〜6以外,與實施例1同樣地獲得附導電膜基材2〜6(實施 例2〜6)。又,除向玻璃基板上塗佈導電糊7〜9代替導電糊1 而形成導電膜7~9以外,與實施例1同樣地獲得附導電膜基 材7〜9(比較例1〜3)。 (導電體配線之電阻) 利用電阻值計(Keithley公司製造,商品名:「Milliohm HiTester」)測定所得導電膜1〜9之電阻值。 (耐久性試驗) 其後’對附導電膜基材丨〜9進行高溫高濕環境下之耐久 性試驗。即,將附導電膜基材1〜9於設為7〇<t、85% RH之 间溫高濕之槽内保持60小時後’測定導電膜1〜9之電阻 值。 恥初始之體積電阻率及高溫高濕環境下之耐久性試驗後 的體積電阻率之變動率、與螯合劑⑻中使用之化合物種 類’螯合劑(B)中使用之化合物於251、離子強度0.1 m〇l/L下之與鋼離子之穩定度常數logKCu、及螯合劑(B)之 添加量併不於表i中。再者,於表【中,整合劑⑻之添 加量係以相對於銅粒子1〇〇質量份之添加量(質量份)而表 160003.doc •39- 201232563 示0 [表1] 導電 糊 螯合劑Β 體積電阻率 (初始) [μΩοηι] 體積電阻率之 變動率 (耐久性試驗後) Γ%1 化合物 穩定度 常數 l〇gKcu 添加量 [質量份] 實施例1 1 水楊羥肟西曼 13 0.1 27 4 實施例2 2 水楊羥肟酸 13 0.25 27 6 實施例3 3 水楊醛肟 13 0.5 23 6 實施例4 4 水楊醛肟 13 0.25 24 7 實施例5 5 鄰胺基苯酚 7.8 0.25 28 4 實施例6 6 水楊酸 11 0.25 36 4 比較例1 7 - - - 36 9 比較例2 8 水楊酿拼 16 0.25 43 12 比較例3 9 松香酸 2 0.25 35 10 由表1可明確,於使用調配有與銅離子之穩定度常數 logKCu為5〜15之螯合劑(B)的導電糊而形成導電膜^ 之附導電膜基材1〜6中,體積電阻率較低,且於高溫高$ 環境下放置後之體積電阻率之變動率亦抑制得較低。 另一方面,於使用未調配整合劑(B)所形成之導電糊〜 形成導電膜7之附導電膜基材7(比較例1}中,於高溫高^ 境下放置後之體積電阻率之變動率較高為9%,财久性車 差。又,於使用調配有與銅離子之穩定度常數】。知超^ 之“勿(水揚醯肼)作為螯合劑⑻之導電糊8、及調面 R穩定度常數1〇心未達5之化合物(松香酸)竹 為螯合劑(B)之導電糊9而★增办 电蝴9而形成導電膜8〜9之附導電膜基材 8〜9中’初始之體籍φ 電阻率較咼,且於高溫高濕環境下放 置後之體積電阻率$ Μ ^亡 之欠動率亦升高至10〜12%,耐久性較 差。 I60003.doc -40· 201232563 【圖式簡單說明】 圖1係表示鋼粒子之濕式還原處理 之概略構成例之說明圖。 之實施中使用的裝置 圖2係表示本發明之附 圖0 導電膜基材之— 例的剖 面示意 [主要元件符號說明】 1 反應槽 2 上部電極 3 下部電極 4 被處理物 5 交流電源 6 固體介電體 7 氣體導入口 8 氣體排出口 9 絕緣物 10 附導電膜基材 1 1 基材 1:2 導電膜 160003.doc -41.§ In addition to (Example 6) G was added to the resin, except that 0.0125 g of salicylic acid was used instead of the salicylhydroxamic acid ruthenium 5 solution, and the conductive paste 6 (Comparative Example 1) g was obtained in the same manner as in Example ,. The conductive paste 7 was obtained in the same manner as in Example 5 except that barium salicylate was added to the resin solution. (Comparative Example 2) 160003.doc •38-201232563 A conductive paste 8 was obtained in the same manner as in Example 1 except that 0.015 g of salicylate was used instead of 0.005 g of salicyl hydroxamic acid in the resin solution. (Comparative Example 3) A conductive paste 9 was obtained in the same manner as in Example 1 except that 0.0125 g of rosin acid was added instead of 0.005 g of salicyl hydroxamic acid in the resin solution. The conductive film substrates 2 to 6 (Examples 2 to 6) were obtained in the same manner as in Example 1 except that the conductive pastes 2 to 6 were applied to the glass substrate instead of the conductive paste 1 to form the conductive films 2 to 6. Further, the conductive film substrates 7 to 9 (Comparative Examples 1 to 3) were obtained in the same manner as in Example 1 except that the conductive pastes 7 to 9 were applied to the glass substrate instead of the conductive paste 1 to form the conductive films 7 to 9. (Resistance of Conductor Wiring) The resistance values of the obtained conductive films 1 to 9 were measured by a resistance meter (manufactured by Keithley Co., Ltd., trade name: "Milliohm HiTester"). (Durability Test) Thereafter, the conductive film substrates 丨 to 9 were subjected to a durability test in a high-temperature and high-humidity environment. In other words, the conductive film substrates 1 to 9 were held in a bath having a temperature of about 7 Å < t and 85% RH for 60 hours, and the electric resistance values of the conductive films 1 to 9 were measured. The volume resistivity of the initial volume resistivity and the volume resistivity after the durability test in the high-temperature and high-humidity environment, and the compound used in the chelating agent (8) 'the compound used in the chelating agent (B) at 251, the ionic strength 0.1 The addition of the stability constant logKCu to the steel ion at m〇l/L and the chelating agent (B) are not shown in Table i. In addition, in the table [integration, the amount of the integrator (8) is added in an amount of 1 part by mass relative to the copper particles (mass parts). Table 160003.doc • 39-201232563 shows 0 [Table 1] Conductive paste Mixture 体积 Volume resistivity (initial) [μΩοηι] Rate of change of volume resistivity (after durability test) Γ%1 Compound stability constant l〇gKcu Addition amount [parts by mass] Example 1 1 Salicyl hydroxy samarium 13 0.1 27 4 Example 2 2 Salicyl Hydroxamic Acid 13 0.25 27 6 Example 3 3 Salicylaldoxime 13 0.5 23 6 Example 4 4 Salicylaldoxime 13 0.25 24 7 Example 5 5 o-Aminophenol 7.8 0.25 28 4 Example 6 6 Acid 11 0.25 36 4 Comparative Example 1 7 - - - 36 9 Comparative Example 2 8 Poplar Brewing 16 0.25 43 12 Comparative Example 3 9 Rosin Acid 2 0.25 35 10 It is clear from Table 1 that it is formulated with copper ions. The stability constant logKCu is a conductive paste of 5 to 15 chelating agent (B) to form a conductive film. The conductive film substrates 1 to 6 have a low volume resistivity and are placed at a high temperature and high environment. The rate of change in resistivity is also suppressed to a low level. On the other hand, in the conductive paste substrate formed by using the unmixed integrator (B) to the conductive film substrate 7 on which the conductive film 7 is formed (Comparative Example 1), the volume resistivity after being placed at a high temperature and high temperature The rate of change is 9% higher, and the long-term car is poor. In addition, the stability constant with copper ions is used in the formulation. The conductive paste of the chelating agent (8) is known as And the surface stability R constant 1 constant (the rosin acid) bamboo is the chelating agent (B) conductive paste 9 and the addition of the electric butterfly 9 to form the conductive film 8 to 9 with the conductive film substrate In 8~9, the initial body φ has a relatively low resistivity, and the volume resistivity after immersion in a high-temperature and high-humidity environment is also increased to 10~12%, and the durability is poor. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view showing a schematic configuration example of wet reduction treatment of steel particles. Apparatus used in the implementation Fig. 2 shows a conductive film base of Fig. 0 of the present invention. Material - Example cross-section [Main component symbol description] 1 Reaction tank 2 Upper electrode 3 Lower electrode 4 Processed material 5 AC power supply 6 Solid dielectric body 7 Gas inlet port 8 Gas discharge port 9 Insulator 10 With conductive film substrate 1 1 Substrate 1:2 Conductive film 160003.doc -41.

Claims (1)

201232563 七、申請專利範圍: i•-種導電糊,其特徵在於含有:銅粒子㈧,其藉由狀 線光電子光譜法求得之表面氧濃度比〇/Cu為〇5以下;整 合劑(B)’其包含於25°C、離子強度G.lm獻下與銅離子 之穩定度常數1〇知為5〜15之化合物;及熱硬化性樹脂 (C)。 2. 如請求们之導電糊,其中上述銅粒子㈧為於pH值為3 以下之分散介質中經還原處理之表面改質銅粒子。 3. 如請求们之導電糊,其中上述銅粒子⑷為複合金屬銅 粒子,其係加熱包含平均-次粒徑為〇 3〜2〇㈣之金屬銅 粒子、及凝聚附著於上述金屬銅粒子表面之平均一次粒 徑為1〜20腿之氯化銅微粒子的銅複合粒子,將上述氮 化銅微粒子轉換為金屬銅微粒子而形成。 4. 如凊求項2之導電糊,其中使用選自甲酸、檸檬酸、順 丁稀一酸、丙二酸、乙酸、丙酸、硫酸、树、鹽酸中 之至 >、種作為上述分散介質之pH值調整劑。 5. 如請求項3之導電糊,其中使用選自甲酸、檸檬酸、順 丁烯二酸、丙二酸、乙酸、丙酸、硫酸、石肖酸' 鹽酸中 之至夕種作為用於形成上述氫化銅微粒子之水溶性銅 化合物溶液之pH值調整劑。 6.如=求項!至5中任一項之導電糊,其令上述聲合劑⑻係 將含有氦^子之官減⑷、與含有氮原子以外之具有孤 立電子對之原子的官能基(b)配置於芳香環之鄰位之芳香 族化合物,且上述氮原子及上述氮原子以外之具有孤立 I60003.doc 201232563 電子對之原子介隔二或三個原子而鍵結。 7.如吻求項6之導電糊,其中上述含有氮原子以外之具有 孤立電子對之原子的官能基(b)為羥基或羧基。 8’如睛求項6或7之導電糊’纟中上述氮原子與上述氣原子 、外之具有孤立電子對之原子介隔二或三個碳原子而 結。 9.如請求項1至8中任一項之導電糊,其中上述螯合劑為 選自水揚羥肟酸、水楊醛肟、鄰胺基苯酚、水揚酸之化 合物。 10· ^請求項19中任一項之導電糊,其中上述熱硬化性樹 脂(C)為選自酚樹脂、鄰苯二曱酸二烯丙酯樹脂、不飽和 醇酸樹脂、環氧樹脂、胺酯樹脂、雙順丁烯二醯亞胺三 井樹脂、聚矽氧樹脂、丙烯酸系樹脂、三聚氰胺樹脂、 尿素樹脂中之至少一種樹脂。 11. 如請求項1至10中任一項之導電糊,其中相對於上述銅 粒子(A)l〇〇質量份’上述螯合劑(B)之量為〇 〇i〜i質量 份。 12. 如請求項1至11中任一項之導電糊,其中相對於上述銅 粒子(A)100質量份’上述熱硬化性樹脂(c)之量為5〜5〇質 量份。 13. —種附導電膜基材’其係將使如請求項1至12中任一項 之導電糊硬化而形成之導電膜設於基材上而成。 14. 如請求項13之附導電膜基材,其中上述導電膜之體積電 阻率為l.OxlO·4 Qcm以下。 160003.doc 201232563 15. 一種附導電膜基材之製造方法,其係將如請求項1至12 中任一項之導電糊塗佈於基材上後,使該導電糊硬化而 形成導電膜。 160003.doc201232563 VII. Patent application scope: i•-type conductive paste, which is characterized by: copper particles (eight), which have a surface oxygen concentration ratio 〇/Cu of 〇5 or less by linear photoelectron spectroscopy; integrator (B) It is a compound containing 5 to 15 of a stability constant of copper ions and a thermosetting resin (C), which is contained at 25 ° C and an ionic strength G.lm. 2. The conductive paste of the request, wherein the copper particles (8) are surface-modified copper particles which have been subjected to reduction treatment in a dispersion medium having a pH of 3 or less. 3. The conductive paste of the request, wherein the copper particles (4) are composite metal copper particles, which are heated to include metal copper particles having an average-order particle size of 〇3 to 2 〇 (4), and agglomerating and adhering to the surface of the metal copper particles. The copper composite particles having a primary primary particle diameter of 1 to 20 legs of copper chloride fine particles are formed by converting the copper nitride fine particles into metallic copper fine particles. 4. The conductive paste of claim 2, wherein the use is selected from the group consisting of formic acid, citric acid, cis-butyl acid, malonic acid, acetic acid, propionic acid, sulfuric acid, tree, hydrochloric acid, and the like pH adjuster for the medium. 5. The conductive paste of claim 3, wherein the use is selected from the group consisting of formic acid, citric acid, maleic acid, malonic acid, acetic acid, propionic acid, sulfuric acid, and diaphoric acid' hydrochloric acid for forming A pH adjuster for the water-soluble copper compound solution of the above copper hydride fine particles. 6. If = item! The conductive paste according to any one of the fifth aspect, wherein the sound-activating agent (8) is disposed in the aromatic ring, and the functional group (b) containing an atom having an isolated electron pair other than the nitrogen atom is disposed in the aromatic ring. An ortho-group aromatic compound in which the above-mentioned nitrogen atom and the atom having the isolated electron pair of the I60003.doc 201232563 are bonded to each other by two or three atoms. 7. A conductive paste according to the item 6, wherein the functional group (b) having an atom having an isolated electron pair other than a nitrogen atom is a hydroxyl group or a carboxyl group. The above-mentioned nitrogen atom in the electroconductive paste of the item 6 or 7 is separated from the above-mentioned gas atom by an atom having an isolated electron pair of two or three carbon atoms. The conductive paste according to any one of claims 1 to 8, wherein the chelating agent is a compound selected from the group consisting of salicylic acid, salicylaldoxime, o-aminophenol, and salicylic acid. The conductive paste according to any one of claim 19, wherein the thermosetting resin (C) is selected from the group consisting of a phenol resin, a diallyl phthalate resin, an unsaturated alkyd resin, and an epoxy resin. At least one of an amine ester resin, a di-n-butylene diimide, a polyoxon resin, an acrylic resin, a melamine resin, and a urea resin. 11. The conductive paste according to any one of claims 1 to 10, wherein the amount of the above chelating agent (B) relative to the copper particles (A) is 〇 〇 i 〜 i parts by mass. The conductive paste according to any one of claims 1 to 11, wherein the amount of the thermosetting resin (c) is from 5 to 5 Å by mass relative to 100 parts by mass of the copper particles (A). 13. A conductive film substrate comprising a conductive film formed by hardening the conductive paste according to any one of claims 1 to 12 on a substrate. 14. The conductive film substrate according to claim 13, wherein the conductive film has a volume resistivity of 1.0 x 1.0 4 cm or less. A method of producing a conductive film substrate, which comprises applying a conductive paste according to any one of claims 1 to 12 to a substrate, and then curing the conductive paste to form a conductive film. 160003.doc
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