JP2020059914A - Particles for joining material and production method thereof, joining paste and preparation method thereof, and production method of joined body - Google Patents

Particles for joining material and production method thereof, joining paste and preparation method thereof, and production method of joined body Download PDF

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JP2020059914A
JP2020059914A JP2018245662A JP2018245662A JP2020059914A JP 2020059914 A JP2020059914 A JP 2020059914A JP 2018245662 A JP2018245662 A JP 2018245662A JP 2018245662 A JP2018245662 A JP 2018245662A JP 2020059914 A JP2020059914 A JP 2020059914A
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particles
bonding
bonding material
less
protective film
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朋彦 山口
Tomohiko Yamaguchi
朋彦 山口
光平 乙川
Kohei Otokawa
光平 乙川
樋上 晃裕
Akihiro Higami
晃裕 樋上
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to KR1020217011753A priority Critical patent/KR20210068468A/en
Priority to CN201980059356.3A priority patent/CN112689545A/en
Priority to EP19868689.1A priority patent/EP3862111A4/en
Priority to US17/281,344 priority patent/US20220040759A1/en
Priority to PCT/JP2019/038945 priority patent/WO2020071432A1/en
Priority to TW108135975A priority patent/TWI819113B/en
Publication of JP2020059914A publication Critical patent/JP2020059914A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05Metallic powder characterised by the size or surface area of the particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/102Metallic powder coated with organic material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/16Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables

Abstract

To provide particles for a joining material that are excellent in oxidation resistance during storage and excellent in low-temperature sinterability during bonding, reduce gas components generated when a protective film is released, and enhance the joining strength upon joining.SOLUTION: The particles for a joining material are produced by forming an organic protective film on the surface of copper nanoparticles, have a BET specific surface area in a range of 3.5 m/g to 8 m/g and a BET diameter in a range of 80 nm to 200 nm, and include the organic protective film in a range of 0.5 to 2.0 mass% with respect to the particles for the joining material. When the particles for the joining material are analyzed using a time-of-flight secondary ion mass spectrometry (TOF-SIMS) method, the amounts of detected CHOions and CHOions are respectively in a range of 0.05 times to 0.2 times the amount of detected Cuions, and the amount of detected Cor higher ions is in a range of less than 0.005 times the amount of detected Cuions.SELECTED DRAWING: Figure 1

Description

本発明は、電子部品の組立てや実装時の接合用ペーストの原料として用いられ、有機保護膜が銅ナノ粒子表面に形成された接合材料用粒子及びその製造方法に関する。またこの接合材料用粒子を含む接合用ペースト及びその調製方法に関する。更にこの接合用ペーストを用いた接合体の製造方法に関する。   The present invention relates to a bonding material particle, which is used as a raw material for a bonding paste at the time of assembling or mounting electronic components, and has an organic protective film formed on the surface of copper nanoparticles, and a method for producing the same. It also relates to a bonding paste containing the particles for bonding material and a method for preparing the same. Further, the present invention relates to a method for manufacturing a bonded body using this bonding paste.

電子部品の組立てや実装時において、2つ以上の部品を接合させる場合、一般的に接合材が用いられる。このような接合材として、金属粒子を溶剤に分散させたペースト状の接合材が知られている。接合材を用いて部品を接合する際は、一方の部品の表面に接合材を塗布し、塗布面に他方の部品を接触させ、この状態で加熱することで接合することができる。   When assembling or mounting electronic components, a joining material is generally used when joining two or more components. As such a bonding material, a paste-shaped bonding material in which metal particles are dispersed in a solvent is known. When joining components using a joining material, the joining material is applied to the surface of one component, the other component is brought into contact with the application surface, and heating is performed in this state to perform joining.

このような用途に供される原料金属粒子には、一般的に、高熱伝導率や高耐熱性が求められる。このため、金、銀などの金属粒子が用いられることが多く、その中でも金より安価な銀を用いることが多い。しかし、銀粒子を用いた場合には形成された接合部や配線部においてマイグレーションが発生しやすいという問題がある。   Raw metal particles used for such applications are generally required to have high thermal conductivity and high heat resistance. Therefore, metal particles such as gold and silver are often used, and among them, silver, which is cheaper than gold, is often used. However, when silver particles are used, there is a problem that migration is likely to occur in the formed joints and wiring portions.

上記マイグレーションの抑制に関しては、銀材料よりも銅材料を用いることが有効である。特に銅ナノ粒子はバルク銅よりも比較的低温で焼結し、得られる接合層は熱伝導性と高耐熱性の面で優れている。また、銀材料に比べるとコストが安価な反面、銅ナノ粒子の比表面積が大きいことが起因し、銅ナノ粒子表面が酸化しやすいという課題がある。   Regarding the suppression of migration, it is more effective to use a copper material than a silver material. In particular, copper nanoparticles sinter at a relatively lower temperature than bulk copper, and the resulting bonding layer is excellent in thermal conductivity and high heat resistance. Further, although the cost is lower than that of the silver material, there is a problem that the surface of the copper nanoparticles is easily oxidized due to the large specific surface area of the copper nanoparticles.

銅ナノ粒子の酸化を防止する方法としては、シリコーンオイルで銅ナノ粒子の作製時に周囲を被覆する方法(例えば、特許文献1(請求項1)参照。)又は銅の微細粉末の作製時にリンゴ酸、クエン酸、酒石酸等の添加剤を加えて酸化を抑制する方法(例えば、特許文献2(請求項1、請求項3)参照。)或いは粒子表面にクエン酸を有する銅ナノ粒子を作製する方法(例えば、特許文献3(請求項1)参照。)が開示されている。特許文献3の方法では、クエン酸の量が銅の重量に対して15wt%以上40wt%以下にしている。   As a method for preventing the oxidation of the copper nanoparticles, a method of coating the periphery of the copper nanoparticles with a silicone oil (see, for example, Patent Document 1 (Claim 1)) or malic acid during the production of fine copper powder , A method of suppressing oxidation by adding an additive such as citric acid or tartaric acid (see, for example, Patent Document 2 (Claims 1 and 3)) or a method of producing copper nanoparticles having citric acid on the particle surface. (For example, refer to Patent Document 3 (Claim 1).) In the method of Patent Document 3, the amount of citric acid is set to 15 wt% or more and 40 wt% or less with respect to the weight of copper.

特開2005−060779号公報JP, 2005-060779, A 特開2007−258123号公報JP, 2007-258123, A 特許第5227828号公報Japanese Patent No. 5227828

特許文献1に開示されているシリコーンオイルで被覆した銅ナノ粒子は耐酸化性という点では非常に優れているが、熱処理後に揮発し切れなかったシリコーンオイルが接合層中に残ってしまうため、焼結不良によって接合強度や熱伝導率の大きな低下を招いてしまう問題があった。   The copper nanoparticles coated with silicone oil disclosed in Patent Document 1 are very excellent in terms of oxidation resistance, but since the silicone oil that has not completely volatilized after the heat treatment remains in the bonding layer, baking is not performed. There is a problem in that the bonding strength and the thermal conductivity are greatly reduced due to poor binding.

特許文献2に開示されている方法では、作製した銅粉末に後から酸化を抑制する添加剤を加えて、ボールミル等で吸着させている。しかし、この手法では均一なコーティングが難しいため、銅ナノ粒子の酸化を完全に防止することが困難であった。   In the method disclosed in Patent Document 2, an additive that suppresses oxidation is added later to the produced copper powder and the copper powder is adsorbed by a ball mill or the like. However, it is difficult to completely prevent the oxidation of the copper nanoparticles because it is difficult to uniformly coat with this method.

特許文献3に開示されている方法では、表面にクエン酸を有する銅ナノ粒子を作製することで、酸化を抑制している。しかし、このクエン酸の量が前記銅の質量に対して15wt%以上40wt%以下と非常に多く、接合体形成時に、表面保護膜の脱離によって発生するガスが接合膜等の接合箇所でボイドとなる問題があった。以上のことから、耐酸化性が付与された表面保護膜を有し、かつその保護膜が脱離の際に発生するガス成分が非常に少ない、低温焼結性に優れた接合材料用の銅ナノ粒子が求められている。   In the method disclosed in Patent Document 3, oxidation is suppressed by producing copper nanoparticles having citric acid on the surface. However, the amount of this citric acid is very large, 15 wt% or more and 40 wt% or less with respect to the mass of the copper, and the gas generated by desorption of the surface protective film at the time of forming the bonded body causes voids at the bonded portion such as the bonded film. There was a problem that became. From the above, copper for a bonding material that has a surface protective film to which oxidation resistance has been imparted, and that the protective film has an extremely small amount of gas components generated during desorption, and has excellent low-temperature sinterability Nanoparticles are needed.

また特許文献3に開示されている方法では、pH10以上pH12未満の範囲にそれぞれ調整された第1の水溶液と第2の水溶液とを混合して銅ナノ粒子を製造する。しかし塩基性溶液中では銅イオンが水酸化銅(II)になり、この水酸化銅(II)が沈殿し易く、目標とする粒子の収率が低下する問題があった。以上のことから、耐酸化性が付与された表面保護膜を有し、かつ低温焼結性に優れた接合材料用の銅ナノ粒子を高収率で製造する方法が求められている。   Further, in the method disclosed in Patent Document 3, copper nanoparticles are produced by mixing a first aqueous solution and a second aqueous solution, each of which is adjusted to have a pH range of 10 or more and less than pH 12. However, in a basic solution, copper ions become copper (II) hydroxide, and this copper (II) hydroxide is apt to precipitate, and there is a problem that the target particle yield decreases. From the above, there is a demand for a method for producing copper nanoparticles for a bonding material, which has a surface protective film provided with oxidation resistance and is excellent in low-temperature sinterability, in high yield.

本発明の第1の目的は、保管中の耐酸化性に優れ、接合時の低温焼結性に優れ、保護膜が脱離する際に発生するガス成分が少なく接合時の接合強度を高められる接合材料用粒子を提供することにある。本発明の第2の目的は、保管中の耐酸化性に優れ、接合時の低温焼結性に優れ、かつ接合時の接合強度が高い接合材料用粒子を高収率で製造する方法を提供することにある。本発明の第3の目的は、こうした接合材料用粒子を含む接合用ペースト及びその調製方法を提供することにある。本発明の第4の目的は、こうした接合用ペーストを用いた接合体の製造方法を提供することにある。   A first object of the present invention is that it has excellent resistance to oxidation during storage, excellent low-temperature sinterability during bonding, less gas components generated when the protective film is released, and enhanced bonding strength during bonding. It is to provide particles for a bonding material. A second object of the present invention is to provide a method for producing particles for a bonding material, which are excellent in oxidation resistance during storage, excellent in low temperature sinterability during bonding, and high in bonding strength during bonding, in a high yield. To do. A third object of the present invention is to provide a bonding paste containing such particles for bonding material and a method for preparing the same. A fourth object of the present invention is to provide a method for manufacturing a bonded body using such a bonding paste.

本発明の第1の観点は、有機保護膜が銅ナノ粒子表面に形成された接合材料用粒子において、前記接合材料用粒子は、BET比表面積が3.5m2/g以上8m2/g以下の範囲にあって、前記比表面積より換算したBET径が80nm以上200nm以下の範囲にあり、前記有機保護膜が前記接合材料用粒子100質量%に対して0.5質量%以上2.0質量%以下の範囲で含まれ、前記接合材料用粒子を飛行時間型二次イオン質量分析法(TOF−SIMS(Time-of-Flight Secondary ion Mass Spectrometry))を用いて分析したときに、C333 -イオンとC342 -イオンのそれぞれの検出量が、Cu+イオンの検出量に対して0.05倍以上0.2倍以下の範囲にあって、C5以上のイオンの検出量がCu+イオンの検出量に対して0.005倍未満の範囲にあることを特徴とする接合材料用粒子である。 A first aspect of the present invention is a bonding material particle in which an organic protective film is formed on the surface of copper nanoparticles, wherein the bonding material particle has a BET specific surface area of 3.5 m 2 / g or more and 8 m 2 / g or less. The BET diameter converted from the specific surface area is 80 nm or more and 200 nm or less, and the organic protective film is 0.5% by mass or more and 2.0% by mass with respect to 100% by mass of the particles for bonding material. % Of C 3 H when the particles for bonding material are analyzed by using time-of-flight secondary ion mass spectrometry (TOF-SIMS). The detection amount of each of 3 O 3 ions and C 3 H 4 O 2 ions is in the range of 0.05 times to 0.2 times the detection amount of Cu + ions, and C 5 or more. 0.005 detection of ions to the detection amount of Cu + ions A bonding material particles, characterized in that in the range below.

本発明の第2の観点は、第1の観点に基づく発明であって、不活性ガス雰囲気下、300℃の温度で30分加熱したときに前記有機保護膜が50質量%以上分解し、分解するガスが二酸化炭素ガス、窒素ガス、アセトンの蒸発ガス及び水蒸気である接合材料用粒子である。   A second aspect of the present invention is the invention based on the first aspect, wherein the organic protective film decomposes by 50% by mass or more when heated at a temperature of 300 ° C. for 30 minutes in an inert gas atmosphere, and decomposes. The particles for bonding material are carbon dioxide gas, nitrogen gas, vaporized gas of acetone, and water vapor.

本発明の第3の観点は、揮発性溶媒と、第1又は第2の観点の接合材料用粒子とを含む接合用ペーストである。   A third aspect of the present invention is a bonding paste containing a volatile solvent and the particles for bonding material of the first or second aspect.

本発明の第4の観点は、室温のクエン酸銅の水分散液にpH調整剤を加えてpH3以上pH7未満にpH調整し、不活性ガス雰囲気下でこのpH調整したクエン酸銅の水分散液にヒドラジン化合物を添加混合し、不活性ガス雰囲気下でこの混合液を60℃以上80℃以下の温度に加熱し1.5時間以上2.5時間以下保持することにより、前記クエン酸銅を還元して銅ナノ粒子を生成させ、この銅ナノ粒子の表面に有機保護膜が形成された接合材料用粒子を製造する方法である。   A fourth aspect of the present invention is to add a pH adjusting agent to an aqueous dispersion of copper citrate at room temperature to adjust the pH to pH 3 or more and less than pH 7, and to carry out the pH adjustment of the aqueous dispersion of copper citrate in an inert gas atmosphere. By adding and mixing a hydrazine compound to the liquid and heating the mixed liquid to a temperature of 60 ° C. or higher and 80 ° C. or lower in an inert gas atmosphere and holding it for 1.5 hours or more and 2.5 hours or less, the copper citrate is removed. This is a method of producing copper nanoparticles by reduction and producing particles for a bonding material in which an organic protective film is formed on the surfaces of the copper nanoparticles.

本発明の第5の観点は、揮発性溶媒と、第1又は第2の観点の接合材料用粒子又は第4の観点の方法で製造された接合材料用粒子とを混合して接合用ペーストを調製する方法である。   A fifth aspect of the present invention is to form a bonding paste by mixing a volatile solvent with the particles for bonding material of the first or second aspect or the particles for bonding material produced by the method of the fourth aspect. This is the method of preparation.

本発明の第6の観点は、第3の観点の接合用ペースト又は第5の観点の方法で調製された接合用ペーストを基板又は電子部品の表面に塗布して塗布層を形成する工程と、前記塗布層を介して前記基板と前記電子部品と重ね合わせる工程と、前記重ね合わせた前記基板と前記電子部品とを、30MPa以下の圧力を加えながら、不活性雰囲気下、200℃以上300℃以下の温度で加熱して前記塗布層を焼結することにより接合層を形成し、この接合層により前記基板と前記電子部品とを接合する工程とを含む接合体の製造方法である。   A sixth aspect of the present invention is to form a coating layer by applying the bonding paste of the third aspect or the bonding paste prepared by the method of the fifth aspect to the surface of the substrate or the electronic component, The step of superposing the substrate and the electronic component via the coating layer, and the superposed substrate and the electronic component, under a pressure of 30 MPa or less, under an inert atmosphere, 200 ℃ or more 300 ℃ or less And a step of forming a bonding layer by sintering the coating layer by heating the coating layer and bonding the substrate and the electronic component by the bonding layer.

本発明の第1の観点の接合材料用粒子は、母体粒子である銅ナノ粒子が有機保護膜に被覆されているため、保管中の耐酸化性に優れる。接合材料用粒子のBET比表面積が3.5m2/g以上8m2/g以下の範囲にあって、比表面積より換算したBET径が80nm以上200nm以下の範囲にあるため、接合材料用粒子の反応面積が大きく、接合の際の加熱による反応性が高く、これにより接合材料用粒子を比較的低温で焼結させることができる。また有機保護膜の接合材料用粒子100質量%に対する割合が、特許文献3に記載された15質量%以上40質量%以下の割合より極めて少ない0.5質量%以上2.0質量%以下の範囲にあるため、焼成時に有機保護膜が分解するガス量が少なく、分解ガスに起因した接合膜等の接合箇所におけるボイドの数が減少して接合強度を高めることができる。 The particles for bonding material according to the first aspect of the present invention are excellent in oxidation resistance during storage because the copper nanoparticles, which are the base particles, are coated on the organic protective film. Since the BET specific surface area of the particles for bonding material is in the range of 3.5 m 2 / g or more and 8 m 2 / g or less and the BET diameter converted from the specific surface area is in the range of 80 nm or more and 200 nm or less, The reaction area is large, and the reactivity due to heating at the time of bonding is high, which allows the particles for bonding material to be sintered at a relatively low temperature. In addition, the ratio of the organic protective film to 100% by mass of the particles for bonding material is 0.5% by mass or more and 2.0% by mass or less, which is significantly smaller than the ratio of 15% by mass or more and 40% by mass or less described in Patent Document 3. Therefore, the amount of gas that the organic protective film decomposes during firing is small, and the number of voids at the bonding site such as the bonding film due to the decomposed gas is reduced, and the bonding strength can be increased.

また接合材料用粒子を飛行時間型二次イオン質量分析法(TOF−SIMS)を用いて分析したときに、C333 -イオンとC342 -イオンのそれぞれの検出量が、Cu+イオンの検出量に対して0.05倍以上0.2倍以下の範囲にあるため、銅ナノ粒子を保護するうえで、有機保護膜の量に過不足はない。このため、有機保護膜は、銅ナノ粒子の表面を酸化させることなく、接合材料用粒子同士の凝集を防ぐ。またC5以上のイオンの検出量がCu+イオンの検出量に対して0.005倍未満の範囲にあるため、接合材料用粒子の焼結性を損なわず、焼結温度を高温にさせることがない。 In addition, when the particles for bonding material are analyzed by time-of-flight secondary ion mass spectrometry (TOF-SIMS), the detected amounts of C 3 H 3 O 3 ions and C 3 H 4 O 2 ions are detected. However, since it is in the range of 0.05 times to 0.2 times the detected amount of Cu + ions, there is no excess or deficiency in the amount of the organic protective film in protecting the copper nanoparticles. Therefore, the organic protective film prevents the bonding material particles from aggregating without oxidizing the surface of the copper nanoparticles. Further, since the detected amount of C 5 or more ions is in the range of less than 0.005 times the detected amount of Cu + ions, it is possible to raise the sintering temperature without impairing the sinterability of the bonding material particles. There is no.

本発明の第2の観点の接合材料用粒子は、不活性ガス雰囲気下、300℃の温度で30分加熱したときに有機保護膜が50質量%以上分解するため、接合膜内における有機保護膜の残渣が少なく、上記接合強度を低下させない。また有機保護膜の分解するガスが二酸化炭素ガス、窒素ガス、アセトンの蒸発ガス及び水蒸気であるため、接合材料用粒子は、比較的低温で脱離しやすい構成である有機保護膜で被覆されているという特長がある。   In the particles for bonding material according to the second aspect of the present invention, the organic protective film is decomposed by 50% by mass or more when heated at a temperature of 300 ° C. for 30 minutes in an inert gas atmosphere. There is little residue, and the above-mentioned bonding strength is not reduced. In addition, since the decomposition gas of the organic protective film is carbon dioxide gas, nitrogen gas, vaporized gas of acetone, and water vapor, the particles for bonding material are covered with the organic protective film which is easily desorbed at a relatively low temperature. There is a feature called.

本発明の第3の観点の接合用ペーストは、上記接合材料用粒子と揮発性溶媒とを含むため、このペーストは、接合体を低温焼結することができ、接合部や配線部において接合材料成分のマイグレーションを生じない特長がある。   Since the bonding paste according to the third aspect of the present invention contains the bonding material particles and a volatile solvent, the paste can sinter the bonded body at a low temperature, and the bonding material in the bonding portion or the wiring portion. There is a feature that migration of components does not occur.

本発明の第4の観点の接合材料用粒子の製造方法では、pH3以上pH7未満の酸性液に還元剤であるヒドラジン化合物を添加混合して、液中に銅ナノ粒子が生成すると、クエン酸銅から生成したクエン酸が銅ナノ粒子表面を速やかに被覆し、銅ナノ粒子の溶解を抑制する。これによりクエン酸銅を還元したときに、銅イオンが水酸化銅(II)になりにくくかつ水酸化銅(II)として沈殿しにくく、目標とする粒子を高収率で製造することができる。   In the method for producing particles for a bonding material according to the fourth aspect of the present invention, when a hydrazine compound that is a reducing agent is added to and mixed with an acidic liquid having a pH of 3 or more and less than pH 7, copper nanoparticles are generated in the liquid. The citric acid generated from rapidly coats the surface of the copper nanoparticles and suppresses the dissolution of the copper nanoparticles. As a result, when copper citrate is reduced, copper ions are unlikely to be copper (II) hydroxide and are unlikely to precipitate as copper (II) hydroxide, and target particles can be produced in high yield.

また製造された母体粒子である銅ナノ粒子が有機保護膜に被覆されているため、保管中の耐酸化性に優れる。また製造された母体粒子が銅ナノ粒子であるため、接合材料用粒子の反応面積が大きく、接合の際の加熱による反応性が高く、これにより接合材料用粒子を比較的低温で焼結させることができる。   In addition, since the manufactured copper nanoparticles, which are the base particles, are covered with the organic protective film, the oxidation resistance during storage is excellent. In addition, since the produced base particles are copper nanoparticles, the reaction area of the bonding material particles is large and the reactivity by heating during bonding is high, which allows the bonding material particles to be sintered at a relatively low temperature. You can

更に製造された接合材料用粒子は焼成時に有機保護膜が分解するガス量が少なく、分解ガスに起因した接合膜におけるボイドの数が減少して接合強度を高めることができる。   Furthermore, the produced bonding material particles have a small amount of gas that decomposes the organic protective film during firing, and the number of voids in the bonding film due to the decomposed gas is reduced, so that the bonding strength can be increased.

本発明の第5の観点の接合用ペーストの調製方法では、上記接合材料用粒子と揮発性溶媒とを混合してでペーストを製造するため、製造されたペーストは、接合体を低温焼結することができ、接合部や配線部において接合材料成分のマイグレーションを生じない特長がある。   In the method for preparing a bonding paste according to the fifth aspect of the present invention, since the paste is manufactured by mixing the particles for bonding material and the volatile solvent, the manufactured paste sinters the bonded body at a low temperature. Therefore, there is a feature that migration of the bonding material component does not occur in the bonding portion and the wiring portion.

本発明の第6の観点の接合体の製造方法では、上記接合材料用粒子を含む接合用ペーストを用いて、塗布層を介して基板と電子部品とを30MPa以下の圧力を加えながら、不活性雰囲気下、200℃以上300℃以下の温度で加熱する。この方法により200℃以上300℃以下という比較的低温で、基板と電子部品に対して、機械的損傷及び熱的損傷を与えずに、接合強度の高い接合体を高い生産性で製造することができる。   In the method for manufacturing a bonded body according to the sixth aspect of the present invention, the bonding paste containing the particles for bonding material is used to apply an inert pressure while applying a pressure of 30 MPa or less to the substrate and the electronic component via the coating layer. In an atmosphere, heating is performed at a temperature of 200 ° C or higher and 300 ° C or lower. By this method, it is possible to manufacture a bonded body having high bonding strength with high productivity at a relatively low temperature of 200 ° C. or higher and 300 ° C. or lower without causing mechanical damage and thermal damage to the substrate and electronic components. it can.

本発明実施形態の接合材料用粒子の断面構造を模式的に表した図である。It is the figure which represented typically the cross-section of the particle | grains for bonding materials of embodiment of this invention. 実施例1の接合材料用粒子の集合体を顕微鏡で撮影した写真図である。FIG. 3 is a photograph of the aggregate of particles for bonding material of Example 1, taken with a microscope.

次に、本発明を実施するための実施形態を図面に基づいて説明する。   Next, an embodiment for carrying out the present invention will be described based on the drawings.

〔接合材料用粒子〕
図1に示すように、この実施形態の接合材料用粒子10では、母体粒子11が銅ナノ粒子からなり、この母体粒子11の表面が有機保護膜12で被覆される。
[Particles for bonding material]
As shown in FIG. 1, in the particles 10 for a bonding material of this embodiment, the base particles 11 are made of copper nanoparticles, and the surfaces of the base particles 11 are covered with the organic protective film 12.

接合材料用粒子10は、そのBET比表面積の範囲は3.5m2/g以上8m2/g以下であって、比表面積より換算したBET径が80nm以上200nm以下の範囲にある。好ましいBET比表面積は4.0m2/g以上8.0m2/g以下の範囲にあり、好ましいBET径は80nm以上170nm以下の範囲にある。BET比表面積が3.5m2/g未満又はBET径が200nmを超えると、接合材料用粒子の反応面積が大きくなく、接合の際の加熱による反応性が低く、これにより比較的低温での焼結ができない。またBET比表面積が8m2/gを超えるか又はBET径が80nm未満であると、ペーストを作製する際に、所定の組成では増粘してしまう不具合がある。接合材料用粒子の形状は、球状に限らず、針状、扁平な板状でもよい。母体粉末である銅ナノ粒子の融点が1085℃であるため、接合用ペーストを塗布しリフローした後の接合膜等の接合箇所の耐熱性に優れる。 The BET specific surface area of the bonding material particles 10 is 3.5 m 2 / g or more and 8 m 2 / g or less, and the BET diameter converted from the specific surface area is 80 nm or more and 200 nm or less. A preferable BET specific surface area is in the range of 4.0 m 2 / g or more and 8.0 m 2 / g or less, and a preferable BET diameter is in the range of 80 nm or more and 170 nm or less. If the BET specific surface area is less than 3.5 m 2 / g or the BET diameter exceeds 200 nm, the reaction area of the particles for bonding material is not large, and the reactivity due to heating during bonding is low, which results in firing at a relatively low temperature. I can't conclude. Further, if the BET specific surface area exceeds 8 m 2 / g or the BET diameter is less than 80 nm, there is a problem that the viscosity increases with a predetermined composition when a paste is prepared. The shape of the particles for the bonding material is not limited to a spherical shape, and may be a needle shape or a flat plate shape. Since the melting point of the copper nanoparticles, which is the base powder, is 1085 ° C., the heat resistance of the bonding portion such as the bonding film after the bonding paste is applied and reflowed is excellent.

有機保護膜12は、クエン酸由来の膜であって、母体粒子11である銅ナノ粒子の表面を被覆し、製造してから接合用ペーストになるまでの保管中の銅ナノ粒子の酸化防止の役割を果たす。この有機保護膜12は接合材料用粒子100質量%に対して0.5質量%以上2.0質量%以下、好ましくは0.8質量%以上1.8質量%以下の範囲で含まれる。有機保護膜12の被覆量又は含有量が0.5質量%未満では、有機保護膜が銅ナノ粒子を完全に被覆していない状態となり、銅ナノ粒子の一部が酸化物となることから、接合時に接合材料用粒子の焼結が進行しない。また有機保護膜12の被覆量又は含有量が2.0質量%を超えると、接合時に有機保護膜の脱離によって発生するガスに起因して、接合膜等の接合箇所にボイドが生成し、接合強度が下がる。   The organic protective film 12 is a film derived from citric acid, which covers the surface of the copper nanoparticles that are the base particles 11 and prevents the oxidation of the copper nanoparticles during storage from the production to the bonding paste. Play a role. The organic protective film 12 is contained in an amount of 0.5% by mass or more and 2.0% by mass or less, preferably 0.8% by mass or more and 1.8% by mass or less, based on 100% by mass of the bonding material particles. When the coating amount or the content of the organic protective film 12 is less than 0.5% by mass, the organic protective film does not completely cover the copper nanoparticles, and part of the copper nanoparticles becomes an oxide, Sintering of particles for bonding material does not proceed during bonding. When the coating amount or content of the organic protective film 12 exceeds 2.0% by mass, a void is generated at a bonding site such as a bonding film due to a gas generated by desorption of the organic protective film during bonding, Bonding strength decreases.

本実施形態の接合材料用粒子は、有機保護膜が母体粒子の銅ナノ粒子を0.5質量%以上2.0質量%以下の割合で被覆しているため、窒素ガス、アルゴンガス等の不活性ガス雰囲気下、300℃の温度で30分加熱したときに、有機保護膜が50質量%以上分解する。またクエン酸由来の有機保護膜であるため、分解時に二酸化炭素ガス、窒素ガス、アセトンの蒸発ガス及び水蒸気を発生する。   In the particles for bonding material according to the present embodiment, the organic protective film covers the copper nanoparticles of the base particles at a ratio of 0.5% by mass or more and 2.0% by mass or less, and therefore, the organic protective film does not contain nitrogen gas, argon gas or the like. When heated at a temperature of 300 ° C. for 30 minutes in an active gas atmosphere, the organic protective film decomposes by 50% by mass or more. Further, since it is an organic protective film derived from citric acid, carbon dioxide gas, nitrogen gas, vaporized gas of acetone and water vapor are generated during decomposition.

この接合材料用粒子10は、飛行時間型二次イオン質量分析法(TOF−SIMS)を用いて分析したときに、C333 -イオンとC342 -イオンのそれぞれの検出量が、Cu+イオンの検出量に対して0.05倍以上0.2倍以下の範囲にあって、C5以上のイオンの検出量がCu+イオンの検出量に対して0.005倍未満の範囲にある。 The particles 10 for bonding material have a C 3 H 3 O 3 ion and a C 3 H 4 O 2 ion, respectively, when analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS). detecting the amount, in the range of not less than 0.2 times 0.05 times or more relative to the detected amount of Cu + ion, the detection amount of C 5 or more ions to the detection amount of Cu + ions 0.005 It is in the range of less than double.

飛行時間型二次イオン質量分析法において検出されるCu+イオンに対するC333 -イオンとC342 -イオン、C5以上のイオンは、銅ナノ粒子の表面を被覆している有機保護膜に由来する。このためC333 -イオンとC342 -イオンのそれぞれの検出量が、Cu+イオンの検出量に対して0.05倍未満であると、銅ナノ粒子の表面を被覆している有機保護膜の量が少なくなり過ぎ、銅ナノ粒子の表面が活性となって銅ナノ粒子を酸化させ易く、かつ銅ナノ粒子が凝集し易くなり、接合用ペーストにしたときにペーストの粘度が上昇して、塗布性が低下する。一方、C333 -イオンとC342 -イオンのそれぞれの検出量が、Cu+イオンの検出量に対して0.2倍を超えると、接合体を形成するときガスボイド(空孔)が生じるため、接合強度が低下し易い。また銅ナノ粒子の表面を被覆している有機保護膜の量が多くなり過ぎ、接合材料用粒子の焼結性が低下して、接合材料用粒子を焼結させるための加熱温度を高温にする必要がある。接合材料用粒子の保管中の耐酸化性をより一層向上し、かつ接合時の低温焼結性をより一層向上させるために、C333 -イオンとC342 -イオンのそれぞれの検出量が、Cu+イオンの検出量に対して0.08倍以上0.16倍以下の範囲にあることが好ましく、C5以上のイオンの検出量がCu+イオンの検出量に対して0.003倍未満の範囲にあることが好ましい。また飛行時間型二次イオン質量分析法において検出されるCu+イオンに対するC5以上のイオンの検出量が0.005倍以上であると、還元反応が不十分であり、接合材に用いられる粒子として適さない。 C 3 H 3 O 3 ions and C 3 H 4 O 2 ions for Cu + ions detected in time-of-flight secondary ion mass spectrometry, and ions of C 5 or higher coat the surface of the copper nanoparticles. It originates from the organic protective film. Therefore, if the detected amount of each of C 3 H 3 O 3 ion and C 3 H 4 O 2 ion is less than 0.05 times the detected amount of Cu + ion, the surface of the copper nanoparticles is detected. When the amount of the organic protective film coating is too small, the surface of the copper nanoparticles becomes active and the copper nanoparticles are easily oxidized, and the copper nanoparticles are easily aggregated. The viscosity increases and the coatability decreases. On the other hand, when the detected amount of each of C 3 H 3 O 3 ions and C 3 H 4 O 2 ions exceeds 0.2 times the detected amount of Cu + ions, a gas void is formed when a bonded body is formed. Since (voids) are generated, the bonding strength is likely to decrease. Further, the amount of the organic protective film coating the surface of the copper nanoparticles becomes too large, and the sinterability of the bonding material particles decreases, so that the heating temperature for sintering the bonding material particles becomes high. There is a need. The oxidation resistance during storage of the bonding material particles further improved, and in order to further improve the low-temperature sintering properties at the time of bonding, C 3 H 3 O 3 - ions and C 3 H 4 O 2 - ions each detection amount is preferably in the range of not less than 0.16 times 0.08 times or more relative to the detected amount of Cu + ion, the detection amount of C 5 or more ions within the detected amount of Cu + ions On the other hand, it is preferably in the range of less than 0.003 times. Further, when the detected amount of C 5 or more ions with respect to Cu + ions detected in the time-of-flight secondary ion mass spectrometry is 0.005 times or more, the reduction reaction is insufficient and particles used for the bonding material. Not suitable as

〔接合材料用粒子の製造方法〕
本実施形態の接合材料用粒子は、クエン酸銅の水分散液にpH調整剤を加えてpH3以上pH7未満にpH調整し、不活性ガス雰囲気下でこのpH調整したクエン酸銅の水分散液に、還元剤として、銅イオンを還元できる1.0倍当量分以上1.2倍当量分以下のヒドラジン化合物を添加混合し、不活性ガス雰囲気下でこの混合液を60℃以上80℃以下の温度に加熱し1.5時間以上2.5時間以下保持することにより、上記クエン酸銅を還元して銅ナノ粒子を生成させ、この銅ナノ粒子の表面に有機保護膜を形成して作られる。
[Method for producing particles for bonding material]
The particles for bonding material of the present embodiment is a copper citrate aqueous dispersion liquid in which a pH adjuster is added to an aqueous dispersion liquid of copper citrate to adjust the pH to 3 or more and less than pH 7, and the pH is adjusted under an inert gas atmosphere. In addition, 1.0 times equivalent or more and 1.2 times equivalent or less hydrazine compound capable of reducing copper ions is added and mixed as a reducing agent, and the mixed solution is heated to 60 ° C. or higher and 80 ° C. or lower under an inert gas atmosphere. By heating to a temperature and holding for 1.5 hours or more and 2.5 hours or less, the copper citrate is reduced to produce copper nanoparticles, and an organic protective film is formed on the surface of the copper nanoparticles. .

クエン酸銅の水分散液は、蒸留水、イオン交換水のような純水に粉末状のクエン酸銅を25質量%以上40質量%以下の濃度になるように添加し、撹拌羽を用いて撹拌し、均一に分散させて調製される。pH調整剤としては、クエン酸三アンモニウム、クエン酸水素アンモニウム、クエン酸等が挙げられる。この中でマイルドにpH調整しやすいことからクエン酸三アンモニウムが好ましい。pH調整剤によるpH調整をpH3以上pH7未満にするのは、pH3未満では、クエン酸銅からの銅イオンの溶出が遅く、反応が速やかに進行しにくく、目標とする粒子が得にくい。またpH7以上では、ヒドラジン化合物でクエン酸銅を還元するときに、溶出した銅イオンが水酸化銅(II)になり易くかつ沈殿し易くなり、高い収率で接合材料用粒子を製造できない。またヒドラジンの還元力が強くなり、反応が進みやすくなるため、目標とする粒子が得にくい。好ましいpHは4以上6以下である。   For the aqueous dispersion of copper citrate, powdered copper citrate is added to pure water such as distilled water or ion-exchanged water so as to have a concentration of 25% by mass or more and 40% by mass or less, and stirring blades are used. It is prepared by stirring and uniformly dispersing. Examples of pH adjusters include triammonium citrate, ammonium hydrogen citrate, and citric acid. Of these, triammonium citrate is preferable because it is easy to adjust the pH mildly. The reason why the pH is adjusted by the pH adjuster to be pH 3 or more and less than pH 7 is that when the pH is less than 3, the elution of copper ions from copper citrate is slow, the reaction does not proceed quickly, and the target particles are difficult to obtain. Further, when the pH is 7 or more, when the copper citrate is reduced with a hydrazine compound, the eluted copper ions are likely to be copper (II) hydroxide and easily precipitated, and the particles for bonding material cannot be produced with a high yield. Further, the reducing power of hydrazine becomes strong and the reaction easily proceeds, so that it is difficult to obtain target particles. The preferred pH is 4 or more and 6 or less.

ヒドラジン化合物によるクエン酸銅の還元は不活性ガス雰囲気下で行われる。液中に溶出する銅の酸化を防止するためである。不活性ガスとしては、窒素ガス、アルゴンガス等が挙げられる。ヒドラジン化合物は、酸性下でクエン酸銅を還元するときに、還元反応後に残渣を生じないこと、安全性が比較的高いこと及び取扱いが容易であること等の利点がある。このヒドラジン化合物としては、ヒドラジン一水和物、無水ヒドラジン、塩酸ヒドラジン、硫酸ヒドラジン等が挙げられる。この中で、硫黄や塩素といった不純物となり得る成分がないことが望ましいため、ヒドラジン一水和物が好ましい。   Reduction of copper citrate with a hydrazine compound is carried out under an inert gas atmosphere. This is to prevent the oxidation of copper eluted in the liquid. Examples of the inert gas include nitrogen gas and argon gas. The hydrazine compound has advantages that, when reducing copper citrate under acidic conditions, no residue is generated after the reduction reaction, the safety is relatively high, and the handling is easy. Examples of the hydrazine compound include hydrazine monohydrate, anhydrous hydrazine, hydrazine hydrochloride and hydrazine sulfate. Of these, hydrazine monohydrate is preferable because it is desirable that there be no component such as sulfur or chlorine that can become impurities.

一般的にpH7未満の酸性液中で生成した銅は溶解してしまう。しかし本実施形態では、pH7未満の酸性液に還元剤であるヒドラジン化合物を添加混合して、液中に銅ナノ粒子が生成すると、クエン酸銅から生成したクエン酸イオン由来の成分が銅ナノ粒子表面を速やかに被覆し、銅ナノ粒子の溶解を抑制する。pH7未満の酸性液は、温度50℃以上70℃以下にしておくことが還元反応が進行し易く好ましい。   Generally, the copper produced in an acidic liquid having a pH of less than 7 will dissolve. However, in the present embodiment, when a hydrazine compound that is a reducing agent is added to and mixed with an acidic liquid having a pH of less than 7 to generate copper nanoparticles in the liquid, a component derived from citrate ions generated from copper citrate is copper nanoparticles. It quickly coats the surface and suppresses the dissolution of copper nanoparticles. The acidic liquid having a pH of less than 7 is preferably kept at a temperature of 50 ° C. or higher and 70 ° C. or lower because the reduction reaction proceeds easily.

不活性ガス雰囲気下でヒドラジン化合物を混合した混合液を60℃以上80℃以下の温度に加熱し1.5時間以上2.5時間以下保持するのは、クエン酸銅を還元して銅ナノ粒子を生成させ、この銅ナノ粒子の表面にクエン酸銅由来の有機保護膜を0.5質量%以上2.0質量%以下の範囲に形成し被覆するためである。不活性ガス雰囲気下で加熱保持するのは、銅ナノ粒子の酸化を防止するためである。出発原料であるクエン酸銅は通常35質量%程度の銅成分を含む。この程度の銅成分を含むクエン酸銅に還元剤であるヒドラジン化合物を添加して、上記温度範囲に昇温加熱し、所定の時間保持することにより、クエン酸銅の還元が進行して、銅成分が98質量%以上99.5質量%以下の粒子になる。この粒子の銅成分以外の成分量である0.5質量%以上2.0質量%が有機保護膜となる。加熱温度が60℃未満で保持時間が1.5時間未満では、クエン酸銅が完全に還元せずに、銅成分が98質量%以上の粒子にならず、有機保護膜の被覆量又は形成量が2.0質量%を超える。これにより、上述したように、接合時に有機保護膜の脱離によって発生するガスに起因して、接合膜等の接合箇所にボイドが生成し、接合強度が下がる。また加熱温度が80℃を超えかつ保持時間が2.5時間を超えると、銅成分が99.5質量%を超えて有機保護膜の被覆量又は形成量が0.5質量%未満となる。これにより、上述したように、有機保護膜が銅ナノ粒子を完全に被覆していない状態となり、銅ナノ粒子の一部が酸化物となることから、接合時に接合材料用粒子の焼結が進行しない。好ましい加熱温度は65℃以上75℃以下であり、好ましい保持時間は2時間以上2.5時間以下である。   Heating the mixed solution of the hydrazine compound mixed under an inert gas atmosphere to a temperature of 60 ° C. or higher and 80 ° C. or lower and holding it for 1.5 hours or more and 2.5 hours or less is to reduce copper citrate to form copper nanoparticles. This is because the organic protective film derived from copper citrate is formed and coated on the surface of the copper nanoparticles in the range of 0.5% by mass or more and 2.0% by mass or less. The heating and holding in an inert gas atmosphere is for preventing the oxidation of the copper nanoparticles. Copper citrate, which is a starting material, usually contains about 35% by mass of a copper component. A hydrazine compound that is a reducing agent is added to copper citrate containing a copper component of this degree, and the temperature is raised to the above temperature range and heated, and held for a predetermined time, whereby the reduction of copper citrate proceeds, copper The component becomes particles having a content of 98% by mass or more and 99.5% by mass or less. The amount of the components other than the copper component of the particles, which is 0.5% by mass or more and 2.0% by mass, becomes the organic protective film. When the heating temperature is less than 60 ° C. and the holding time is less than 1.5 hours, copper citrate is not completely reduced, and the copper component does not become particles of 98 mass% or more. Exceeds 2.0 mass%. As a result, as described above, due to the gas generated by the detachment of the organic protective film at the time of bonding, voids are generated at the bonding site such as the bonding film and the bonding strength is reduced. Further, when the heating temperature exceeds 80 ° C. and the holding time exceeds 2.5 hours, the copper component exceeds 99.5 mass% and the coating amount or the formation amount of the organic protective film becomes less than 0.5 mass%. As a result, as described above, the organic protective film does not completely cover the copper nanoparticles and a part of the copper nanoparticles becomes an oxide, so that the sintering of the bonding material particles proceeds at the time of bonding. do not do. A preferable heating temperature is 65 ° C. or higher and 75 ° C. or lower, and a preferable holding time is 2 hours or longer and 2.5 hours or shorter.

クエン酸銅を還元した液で生成された粒子を、不活性ガス雰囲気下でこの液から、例えば遠心分離機を用いて、固液分離して、凍結乾燥法、減圧乾燥法で乾燥することにより、目標とする粒子である、上述した銅ナノ粒子表面に有機保護膜が形成された接合材料用粒子を得る。この接合材料用粒子は、銅ナノ粒子表面が有機保護膜で被覆されているため、接合用ペーストとして用いるまで、大気中に保管しても、粒子の酸化を防止することができる。   Particles produced from a solution obtained by reducing copper citrate are separated from this solution under an inert gas atmosphere by using, for example, a centrifuge, solid-liquid separation, and dried by freeze-drying or vacuum drying. Then, the particles for bonding material, which are target particles, in which the organic protective film is formed on the surface of the above-mentioned copper nanoparticles are obtained. Since the surfaces of the copper nanoparticles are covered with the organic protective film, the particles for the bonding material can prevent the particles from being oxidized even if they are stored in the air until they are used as a bonding paste.

〔接合用ペースト〕
上記接合材料用粒子と、揮発性溶媒とを含む接合用ペーストについて説明する。揮発性溶媒としては、アルコール系溶媒、グリコール系溶媒、アセテート系溶媒、炭化水素系溶媒およびアミン系溶媒が挙げられる。アルコール系溶媒の具体例としては、α−テルピネオール、イソプロピルアルコールが挙げられる。グリコール系溶媒の具体例としては、エチレングリコール、ジエチレングリコール、ポリエチレングリコールが挙げられる。アセテート系溶媒の具体例としては、酢酸ブチルトールカルビテートが挙げられる。炭化水素系溶媒の具体例としては、デカン、ドデカン、テトラデカンが挙げられる。アミン系溶媒の具体例としては、ヘキシルアミン、オクチルアミン、ドデシルアミンが挙げられる。
[Paste for bonding]
A bonding paste containing the bonding material particles and a volatile solvent will be described. Examples of the volatile solvent include alcohol solvents, glycol solvents, acetate solvents, hydrocarbon solvents and amine solvents. Specific examples of the alcohol solvent include α-terpineol and isopropyl alcohol. Specific examples of the glycol solvent include ethylene glycol, diethylene glycol and polyethylene glycol. A specific example of the acetate solvent is butyl tol carbitate acetate. Specific examples of the hydrocarbon solvent include decane, dodecane, and tetradecane. Specific examples of the amine solvent include hexylamine, octylamine and dodecylamine.

接合用ペースト中の接合材料用粒子の含有量は、接合用ペーストの全体量に対して50質量%以上であることが好ましく、70質量%以上95質量%以下の範囲にあることが特に好ましい。接合材料用粒子の含有量が上記の範囲にあると、接合用ペーストの粘度が低くなり過ぎず、部材の表面に安定して接合用ペーストを塗布することができる。また、接合用ペーストを焼成することによって、密度が高く、ボイドの発生量が少ない焼結体(接合層)を得ることができる。また、接合用ペーストは、更に酸化防止剤、粘度調整剤などの添加剤を含んでいてもよい。これらの添加剤の含有量は、接合用ペースト100質量%に対して1質量%以上5質量%以下の範囲にあることが好ましい。   The content of the bonding material particles in the bonding paste is preferably 50% by mass or more, and particularly preferably 70% by mass or more and 95% by mass or less, based on the total amount of the bonding paste. When the content of the bonding material particles is within the above range, the viscosity of the bonding paste does not become too low, and the bonding paste can be stably applied to the surface of the member. Further, by firing the bonding paste, a sintered body (bonding layer) having a high density and a small amount of voids can be obtained. Further, the bonding paste may further contain additives such as an antioxidant and a viscosity modifier. The content of these additives is preferably in the range of 1% by mass or more and 5% by mass or less based on 100% by mass of the bonding paste.

〔接合用ペーストの調製方法〕
接合用ペーストは、例えば、揮発性溶媒と接合材料用粒子とを混合して得た混合物を、混練装置を用いて混練することによって製造できる。混練装置としては、三本ロールミルが挙げられる。
[Method for preparing bonding paste]
The bonding paste can be produced, for example, by kneading a mixture obtained by mixing the volatile solvent and the particles for bonding material using a kneading device. As a kneading device, a three roll mill can be mentioned.

〔接合体の製造方法〕
本実施形態の接合体は、上述した接合用ペーストを基板又は電子部品の表面に塗布して塗布層を形成する工程と、この塗布層を介して上記基板と上記電子部品と重ね合わせる工程と、この重ね合わせた上記基板と上記電子部品とを、30MPa以下の圧力を加えながら、不活性雰囲気下、200℃以上300℃以下の温度で加熱して上記塗布層を焼結することにより接合層を形成し、この接合層により上記基板と上記電子部品とを接合する工程とを経て製造される。
[Method of manufacturing joined body]
The bonded body of the present embodiment, a step of applying a bonding paste described above to the surface of a substrate or an electronic component to form a coating layer, a step of superposing the substrate and the electronic component via the coating layer, The substrate and the electronic component thus laminated are heated at a temperature of 200 ° C. or more and 300 ° C. or less in an inert atmosphere while applying a pressure of 30 MPa or less to sinter the coating layer to form a bonding layer. It is manufactured through the steps of forming and joining the substrate and the electronic component by the joining layer.

上記基板としては、特に限定されないが、例えば、無酸素銅板、銅モリブデン板、高放熱絶縁基板(例えば、DBC (Direct Copper Bond))、LED(Light Emitting Diode)パッケージなどの半導体素子搭載用基材等が挙げられる。また上記電子部品としては、IGBT (Insulated Gate Bipolar Transistor)、ダイオード、ショットキーバリヤダイオード、MOS−FET(Metal Oxide Semiconductor Field Effect Transistor)、サイリスタ、ロジック、センサー、アナログ集積回路、LED、半導体レーザー、発信器等の半導体素子が挙げられる。塗布方法は、特に限定されないが、例えば、スピンコーティング法、メタルマスク法、スプレーコーティング法、ディスペンサコーティング法、ナイフコーティング法、スリットコーティング法、インクジェットコーティング法、スクリーン印刷法、オフセット印刷法、ダイコーティング法等が挙げられる。   The substrate is not particularly limited, but for example, an oxygen-free copper plate, a copper molybdenum plate, a high heat dissipation insulating substrate (for example, DBC (Direct Copper Bond)), a semiconductor element mounting base material such as an LED (Light Emitting Diode) package Etc. Further, as the above-mentioned electronic parts, IGBT (Insulated Gate Bipolar Transistor), diode, Schottky barrier diode, MOS-FET (Metal Oxide Semiconductor Field Effect Transistor), thyristor, logic, sensor, analog integrated circuit, LED, semiconductor laser, transmission A semiconductor element such as a container is used. The coating method is not particularly limited, and examples thereof include spin coating method, metal mask method, spray coating method, dispenser coating method, knife coating method, slit coating method, inkjet coating method, screen printing method, offset printing method, die coating method. Etc.

塗布層を形成した後、基板と電子部品とを塗布層を介して重ね合わせる。塗布層の厚さは均一であることが好ましい。重ね合わせた基板と電子部品とを30MPa以下の圧力を加えながら、不活性雰囲気下、200℃以上300℃以下の温度で加熱する。加える圧力が30MPaを超えると、基板又は電子部品に対して機械的損傷を与えるおそれがある。加える圧力は5MPa以上30MPa以下が好ましい。圧力が5MPa未満であると、塗布層中の銅ナノ粒子が焼結しにくくなり、接合層を形成できなくなるおそれがある。また雰囲気は、火気により引火のおそれがなく、接合体の酸化を防ぐ観点から、窒素ガス、アルゴンガス等の不活性雰囲気が特定される。また加熱温度は、200℃未満では塗布層中の銅ナノ粒子が焼結しにくくなり、接合層を形成できなくなるおそれがある。また300℃を超えると、基板又は電子部品に対して熱的損傷を与えるおそれがある。好ましい加熱温度は230℃以上300℃以下である。   After forming the coating layer, the substrate and the electronic component are superposed on each other with the coating layer interposed therebetween. The thickness of the coating layer is preferably uniform. The superposed substrate and electronic component are heated at a temperature of 200 ° C. or higher and 300 ° C. or lower in an inert atmosphere while applying a pressure of 30 MPa or lower. If the applied pressure exceeds 30 MPa, there is a risk of mechanical damage to the substrate or electronic components. The applied pressure is preferably 5 MPa or more and 30 MPa or less. If the pressure is less than 5 MPa, the copper nanoparticles in the coating layer will be difficult to sinter, and the bonding layer may not be formed. In addition, as the atmosphere, an inert atmosphere such as nitrogen gas or argon gas is specified from the viewpoint that there is no risk of ignition due to fire and oxidation of the bonded body is prevented. If the heating temperature is less than 200 ° C., the copper nanoparticles in the coating layer will be difficult to sinter, and the bonding layer may not be formed. On the other hand, if the temperature exceeds 300 ° C, the substrate or the electronic component may be thermally damaged. A preferable heating temperature is 230 ° C. or higher and 300 ° C. or lower.

このようして重ね合わせた基板と電子部品とを、加圧しながら、不活性雰囲気下、200℃以上300℃以下の温度で加熱することにより、塗布層中の銅ナノ粒子が焼結して本実施形態である接合体が製造される。   By heating the substrate and the electronic component thus laminated together under pressure at a temperature of 200 ° C. or higher and 300 ° C. or lower in an inert atmosphere, the copper nanoparticles in the coating layer are sintered and The joined body according to the embodiment is manufactured.

次に本発明の実施例を比較例とともに詳しく説明する。   Next, examples of the present invention will be described in detail together with comparative examples.

<実施例1>
先ず、出発原料である市販のクエン酸銅・2.5水和物(和光純薬社製)を室温のイオン交換水に入れ、撹拌羽を用いて撹拌し、濃度30質量%のクエン酸銅の水分散液を調製した。次いで、このクエン酸銅の水分散液にpH調整剤としてのクエン酸アンモニウム水溶液を加えて、上記水分散液のpHが3になるように調整した。次に、pH調整した液を50℃の温度にし、窒素ガス雰囲気下で、pH調整した液に還元剤として、銅イオンを還元できる1.2倍当量分のヒドラジン一水和物水溶液(2倍希釈)を一気に添加し、撹拌羽を用いて均一に混合した。更に、目標とする接合材料用粒子を合成するために、上記水分散液と上記還元剤との混合液を窒素ガス雰囲気下で最高温度の70℃まで昇温し、70℃で2時間保持した。遠心分離機を用いて、加熱保持した液中に生成した粒子を固液分離して回収した。回収した粒子を減圧乾燥法で乾燥し、実施例1の接合材料用粒子を製造した。この実施例1の接合材料用粒子の集合体を30,000倍に拡大して撮影した顕微鏡写真図を図2に示す。図2から実施例1の接合材料用粒子の集合体は百ナノメートル程度の粒子により構成されていることが分かる。実施例1及び次に述べる実施例2〜11並びに比較例1〜9の接合材料用粒子の製造条件を下記の表1に示す。
<Example 1>
First, a commercially available copper citrate 2.5 hydrate (manufactured by Wako Pure Chemical Industries, Ltd.), which is a starting material, is placed in ion-exchanged water at room temperature and stirred using a stirring blade to obtain a copper citrate having a concentration of 30% by mass. An aqueous dispersion of was prepared. Next, an aqueous solution of ammonium citrate as a pH adjuster was added to this aqueous dispersion of copper citrate to adjust the pH of the above aqueous dispersion to 3. Next, the pH-adjusted liquid is brought to a temperature of 50 ° C., and under a nitrogen gas atmosphere, a 1.2 times equivalent amount of an aqueous solution of hydrazine monohydrate capable of reducing copper ions as a reducing agent in the pH-adjusted liquid (2 times (Dilution) was added all at once and mixed uniformly using a stirring blade. Further, in order to synthesize the target particles for bonding material, the mixed solution of the aqueous dispersion and the reducing agent was heated to the maximum temperature of 70 ° C. under a nitrogen gas atmosphere and kept at 70 ° C. for 2 hours. . Using a centrifuge, the particles generated in the liquid kept heated were subjected to solid-liquid separation and collected. The collected particles were dried by a reduced pressure drying method to produce the particles for bonding material of Example 1. FIG. 2 shows a micrograph of the aggregate of particles for bonding material of Example 1 taken at a magnification of 30,000. It can be seen from FIG. 2 that the aggregate of particles for the bonding material of Example 1 is composed of particles of about 100 nm. Table 1 below shows the production conditions of the particles for bonding material of Example 1 and Examples 2 to 11 described below and Comparative Examples 1 to 9.

<実施例2〜11、比較例1〜3及び比較例6〜9>
実施例2〜8では、実施例1の出発原料及び還元剤は変えずに、上記表1に示すように、実施例1に示したクエン酸銅の水分散液のpHを変更することで還元剤の酸化還元電位Eを変更し、接合材料用粒子を合成するときの最高温度とその保持時間を変更又は維持した。それ以外は実施例1と同様にして、実施例2〜8、比較例1〜3及び比較例6〜9の接合材料用粒子を製造した。実施例9〜11では、還元剤として、無水ヒドラジンを用い、還元剤の酸化還元電位Eを−0.6Vに、合成時の最高温度を70℃に、その保持時間を2.0時間にした。
<Examples 2 to 11, Comparative Examples 1 to 3 and Comparative Examples 6 to 9>
In Examples 2 to 8, reduction was performed by changing the pH of the aqueous dispersion of copper citrate shown in Example 1 as shown in Table 1 without changing the starting material and the reducing agent of Example 1. The redox potential E of the agent was changed to change or maintain the maximum temperature and the holding time when synthesizing the particles for the bonding material. Except for that, the particles for bonding materials of Examples 2 to 8, Comparative Examples 1 to 3 and Comparative Examples 6 to 9 were manufactured in the same manner as in Example 1. In Examples 9 to 11, anhydrous hydrazine was used as a reducing agent, the redox potential E of the reducing agent was -0.6 V, the maximum temperature during synthesis was 70 ° C, and the holding time was 2.0 hours. .

ヒドラジン一水和物をはじめとするヒドラジン系の還元剤は、酸性域とアルカリ域で異なる反応となることが知られている。また、実施例2〜11、比較例1〜3及び比較例6〜9では反応液中のpHを変化させることで還元力に差をつけた。表1に各条件での酸化還元電位E(V)を示す。
(酸性域)N25 + = N2 + 5H+ + 4e-
(アルカリ域)N24 + 4OH- = N2 + 4H2O + 4e-
酸化還元電位E:−0.23 −0.975pH
It is known that hydrazine-based reducing agents such as hydrazine monohydrate have different reactions in the acidic region and the alkaline region. Further, in Examples 2 to 11, Comparative Examples 1 to 3 and Comparative Examples 6 to 9, the reducing power was changed by changing the pH in the reaction liquid. Table 1 shows the redox potential E (V) under each condition.
(Acid range) N 2 H 5 + = N 2 + 5H + + 4e
(Alkaline region) N 2 H 4 + 4OH = N 2 + 4H 2 O + 4e
Redox potential E: -0.23 -0.975 pH

<比較例4>
実施例1の還元剤であるヒドラジン一水和物をギ酸アンモニウムに変更し、この還元剤の酸化還元電位Eを変更した(E:0.3V)。実施例1の合成時の最高温度とその保持時間は変えずに、クエン酸銅の水分散液のpH値を変更し、それ以外は実施例1と同様にして、比較例4の接合材料用粒子を製造した。
<Comparative example 4>
The reducing agent hydrazine monohydrate in Example 1 was changed to ammonium formate, and the redox potential E of this reducing agent was changed (E: 0.3 V). For the bonding material of Comparative Example 4, the pH value of the aqueous dispersion of copper citrate was changed without changing the maximum temperature during synthesis of Example 1 and its holding time, and otherwise the same as in Example 1. Particles were produced.

<比較例5>
実施例1の還元剤であるヒドラジン一水和物をギ酸に変更し、この還元剤の酸化還元電位Eを変更した(E:−0.2V)。実施例1のクエン酸銅の水分散液のpH値、合成時の最高温度及びその保持時間は変更しなかった。それ以外は実施例1と同様にして、比較例5の接合材料用粒子を製造した。
<Comparative Example 5>
The reducing agent hydrazine monohydrate of Example 1 was changed to formic acid, and the redox potential E of this reducing agent was changed (E: -0.2 V). The pH value of the aqueous dispersion of copper citrate of Example 1, the maximum temperature during synthesis, and the holding time thereof were not changed. Otherwise in the same manner as in Example 1, the particles for bonding material of Comparative Example 5 were produced.

<比較評価試験と結果>
実施例1〜11及び比較例1〜9で接合材料用粒子を製造したときの粒子のそれぞれの製造収率と、実施例1〜11及び比較例1〜9で得られた20種類の接合材料用粒子の母体粒子組成、BET比表面積及びBET径と、有機保護膜に関連する飛行時間型二次イオン質量分析法(TOF−SIMS)によるCu+イオンの検出量に対するC333 -イオンとC342 -イオンのそれぞれの検出量、C5以上のイオンの検出量をそれぞれ算出又は測定した。これらの結果を以下の表2に示す。
<Comparison evaluation test and results>
The respective production yields of particles when the particles for bonding material were manufactured in Examples 1 to 11 and Comparative Examples 1 to 9 and 20 kinds of bonding materials obtained in Examples 1 to 11 and Comparative Examples 1 to 9 mother particle composition of use particles, the BET specific surface area and BET diameter, time-of-flight secondary ion mass spectrometry associated with organic protective layer C 3 H with respect to the detection of (TOF-SIMS) on by Cu + ions 3 O 3 - The detected amounts of ions and C 3 H 4 O 2 ions, and the detected amounts of C 5 or more ions were calculated or measured. The results are shown in Table 2 below.

また有機保護膜の接合材料用粒子に対する質量割合、窒素雰囲気下での有機保護膜の分解量割合及び接合材料用粒子を焼成したときに発生するガス成分をそれぞれ算出又は測定した。これらの結果を以下の表3に示す。還元不十分で製造収率を算出できなかった粒子(比較例1、比較例4〜6、比較例9)についてはBET比表面積、BET径、有機保護膜の特性について測定していない。   Further, the mass ratio of the organic protective film to the bonding material particles, the decomposition amount ratio of the organic protective film in a nitrogen atmosphere, and the gas component generated when the bonding material particles were fired were calculated or measured. The results are shown in Table 3 below. BET specific surface area, BET diameter, and characteristics of the organic protective film were not measured for particles (Comparative Example 1, Comparative Examples 4 to 6, and Comparative Example 9) whose production yield could not be calculated due to insufficient reduction.

(1) 粒子の製造収率
粒子の製造収率は、クエン酸銅に含まれる銅量を理論量としたときの、乾燥後の回収した粉末量の比率を製造収率として求めた。
(1) Production yield of particles The production yield of particles was determined as the production yield, which is the ratio of the amount of recovered powder after drying when the amount of copper contained in copper citrate is the theoretical amount.

(2) 粒子のBET比表面積
粒子の比表面積は、測定装置として、QUANTACHROME AUTOSORB-1(カンタクローム・インスツルメンツ製)を用い、冷却した接合材料用粒子へのN2ガスの吸着量から求めた。
(2) BET Specific Surface Area of Particles The specific surface area of particles was determined from the amount of N 2 gas adsorbed to the cooled particles for bonding material using QUANTACHROME AUTOSORB-1 (manufactured by Kantachrome Instruments) as a measuring device.

(3) 粒子のBET径
粒子のBET径は、上記比表面積(BET法)を測定後、この面積を全て球であると言う前提のもとに計算し、銅ナノ粒子が真球とした場合の理論的な直径を示す。
(3) BET diameter of particles The BET diameter of particles is calculated on the assumption that all the areas are spheres after measuring the specific surface area (BET method), and the copper nanoparticles are true spheres. Shows the theoretical diameter of.

(4) 飛行時間型二次イオン質量分析法による測定
Cu+イオンに対するC333 -イオンとC342 -イオン、C5以上のイオンの各検出は、飛行時間型二次イオン質量分析法(TOF−SIMS)を用いて次のように測定した。銅粉をIn箔表面に埋没したものを測定用試料とした。測定装置はULVAC PHI社製nanoTOFIIを用いた。測定範囲は100μm平方の範囲、一次イオンはBi3 ++(30kV)、測定時間は5分の条件で測定してTOF−SIMSスペクトルを得た。得られたTOF−SIMSスペクトルから、Cu+イオン、C333 -イオン、C342 -イオン、C5以上のイオンの検出量を求め、C333 -イオンとC342 -イオン、C5以上のイオンの検出量を、それぞれCu+イオンの検出量で除して、Cu+イオンに対するC333 -イオンとC342 -イオン、C5以上のイオンの検出量を算出した。
(4) Measurement by Time-of-Flight Secondary Ion Mass Spectrometry The detection of C 3 H 3 O 3 ion and C 3 H 4 O 2 ion with respect to Cu + ion, and ions of C 5 or more are carried out by time-of-flight type ion detection. It measured as follows using the secondary ion mass spectrometry (TOF-SIMS). A sample for measurement was obtained by burying copper powder on the surface of the In foil. As the measuring device, nanoTOFII manufactured by ULVAC PHI was used. The measurement range was 100 μm square, the primary ion was Bi 3 ++ (30 kV), and the measurement time was 5 minutes to obtain a TOF-SIMS spectrum. From the resulting TOF-SIMS spectrum, Cu + ions, C 3 H 3 O 3 - ions, C 3 H 4 O 2 - ions, determined a detectable amount of C 5 or more ions, C 3 H 3 O 3 - ions the C 3 H 4 O 2 - ions, a detectable amount of C 5 or more ions, each divided by the detected amount of Cu + ions, Cu + C 3 H 3 O 3 on ion - ion and C 3 H 4 O The detected amounts of 2 - ions and C 5 or more ions were calculated.

(5) 接合材料用粒子における有機保護膜の質量割合
接合材料用粒子における有機保護膜の質量割合は、接合材料用粒子を量り取り、窒素雰囲気下で300℃の温度で30分間加熱した後、室温まで放冷し、金属粒子凝集体の質量を測定した。下記の式より算出した。
接合材料用粒子における有機保護膜の質量割合(質量%)=(A−B)/A×100
但し、Aは、加熱前の接合材料用粒子の質量、Bは、加熱後の接合材料用粒子の質量である。
(5) Mass ratio of the organic protective film in the particles for the bonding material The mass ratio of the organic protective film in the particles for the bonding material is determined by weighing out the particles for the bonding material and heating at 300 ° C. for 30 minutes in a nitrogen atmosphere, After cooling to room temperature, the mass of the metal particle aggregate was measured. It was calculated from the following formula.
Mass ratio of organic protective film in particles for bonding material (mass%) = (AB) / A × 100
However, A is the mass of the bonding material particles before heating, and B is the mass of the bonding material particles after heating.

(6) 窒素雰囲気下での有機保護膜の分解量割合
有機保護膜の分解量割合は、有機保護膜の質量割合を算出する方法と同じ方法で、窒素雰囲気下で接合材料用粒子を500℃の温度で30分加熱し、500℃条件下の減少量に対する300℃条件下の減少量の割合を分解量割合として求めた。
(6) Decomposition rate of the organic protective film in a nitrogen atmosphere The decomposition rate of the organic protective film is the same as the method of calculating the mass ratio of the organic protective film. It was heated at the temperature of 30 minutes and the ratio of the decrease amount under the condition of 300 ° C. to the decrease amount under the condition of 500 ° C. was determined as the decomposition amount ratio.

(7) 接合材料用粒子の焼成時に発生するガス成分
接合材料用粒子の焼成時に発生するガス成分は、熱分解ガスクロマトグラフィーを用いて、室温から300℃までに発生するガス成分を同定した。
(7) Gas component generated during firing of particles for bonding material The gas component generated during firing of particles for bonding material was identified by gas decomposition from room temperature to 300 ° C using pyrolysis gas chromatography.

(8) 接合体の製造条件、接合条件及び接合強度
実施例1〜11及び比較例2、3、7、8で得られた15種類の接合材料用粒子を揮発性溶媒であるエチレングリコール(EG)と混合することにより、接合用ペーストを調製した。具体的には、エチレングリコール85質量%と接合材料用粒子15質量%の割合で、溶媒と粒子をポリプロピレン製容器に入れ、混錬機(THINKY製、あわとり練太郎)で混錬した。混練:1,000rpm×60秒及び脱泡:1,000rpm×60秒の条件で予備混錬し、更に三本ロール(EXACT製、80E)を用いてGap幅を、1回目:50μm、2回目:10μm、3回目:5μmにそれぞれ設定して、本格的に混錬した。これにより接合用ペーストを調製した。
(8) Manufacturing conditions of bonded body, bonding conditions and bonding strength 15 kinds of particles for bonding material obtained in Examples 1 to 11 and Comparative Examples 2, 3, 7, and 8 were treated with ethylene glycol (EG ) Was added to prepare a bonding paste. Specifically, a solvent and particles were placed in a polypropylene container at a ratio of 85% by mass of ethylene glycol and 15% by mass of particles for bonding material, and kneaded by a kneader (THINKY, Awatori Kentaro). Kneading: 1,000 rpm × 60 seconds and defoaming: 1,000 rpm × 60 seconds, preliminarily kneading, and using a triple roll (manufactured by EXACT, 80E), Gap width: 1st time: 50 μm, 2nd time : 10 μm, 3rd time: 5 μm, and kneaded in earnest. This prepared the bonding paste.

接合用ペーストをメタルマスク印刷機にセットしたメタルマスク版(2.5mm、50μmt)を用いて無酸素銅板(0.8mmt)上に印刷し、室温30分の予備乾燥後にSiダミー素子を搭載した。焼成条件は加圧接合装置(アユミ工業製、RB−50)を用いて、窒素雰囲気下、接合温度を200℃、230℃、250℃、300℃の4水準に設定した。また接合荷重は、接合温度が300℃のときには10MPaに、接合温度が230℃及び250℃のときには20MPaに、接合温度が200℃のときには30MPaにそれぞれ設定した。昇温速度は30℃/分で、接合保持時間は、接合温度が230℃、250℃及び300℃のときには15分間、接合温度が200℃のときには30分にそれぞれ設定した。   The bonding paste was printed on an oxygen-free copper plate (0.8 mmt) using a metal mask plate (2.5 mm, 50 μmt) set in a metal mask printing machine, and a Si dummy element was mounted after 30 minutes of preliminary drying at room temperature. . The firing conditions were set to four levels of 200 ° C., 230 ° C., 250 ° C. and 300 ° C. under a nitrogen atmosphere using a pressure bonding device (RB-50 manufactured by Ayumi Kogyo Co., Ltd.). The joining load was set to 10 MPa when the joining temperature was 300 ° C., 20 MPa when the joining temperature was 230 ° C. and 250 ° C., and 30 MPa when the joining temperature was 200 ° C. The temperature rising rate was 30 ° C./minute, and the bonding holding time was set to 15 minutes when the bonding temperature was 230 ° C., 250 ° C. and 300 ° C., and 30 minutes when the bonding temperature was 200 ° C.

上記の接合条件にて接合体を製造した。得られた接合体は、ボンデイングテスタ(オリエンテック製、テンシロン RTF−1310)を用いて、接合強度を評価し、15MPa以上の強度が得られた接合体を良好と評価した。これらの結果を以下の表4〜表6に示す。   A joined body was manufactured under the above joining conditions. The bonding strength of the obtained bonded body was evaluated using a bonding tester (Tensilon RTF-1310 manufactured by Orientec Co., Ltd.), and the bonded body having a strength of 15 MPa or more was evaluated as good. The results are shown in Tables 4 to 6 below.

表1〜表3及び表6から明らかなように、比較例1では、pH2の強酸性下で還元剤を添加混合したため、合成液を70℃で2時間加熱したが、クエン酸銅の還元が完了せず、有機保護膜の質量割合も多い結果となり、目標とする粒子を製造できなかった。   As is clear from Tables 1 to 3 and 6, in Comparative Example 1, since the reducing agent was added and mixed under strong acidity of pH 2, the synthetic solution was heated at 70 ° C. for 2 hours, but the reduction of copper citrate did not occur. This was not completed, resulting in a large mass ratio of the organic protective film, and the target particles could not be manufactured.

比較例2では、pH8のアルカリ性下で還元剤を添加混合したため、液中で銅イオンが水酸化銅(II)になり、粒子の製造収率が90%と高くなかった。また液中で粒成長が生じてしまい、得られた接合材料用粒子のBET比表面積が1.9m2/gと小さくまたBET径が353nmと大きく、有機保護膜の質量割合も0.4質量%と低かった。また飛行時間型二次イオン質量分析では、C333 -イオンとC342 -イオンのそれぞれの検出量が、Cu+イオンの検出量に対して0.21倍と0.48倍と大きかった。これにより、低温焼結性が悪く、接合強度も4MPa及び8MPaと低かった。 In Comparative Example 2, since the reducing agent was added and mixed under the alkaline condition of pH 8, copper ions became copper (II) hydroxide in the liquid, and the production yield of particles was not high at 90%. Further, grain growth occurs in the liquid, the BET specific surface area of the obtained bonding material particles is as small as 1.9 m 2 / g, the BET diameter is as large as 353 nm, and the mass ratio of the organic protective film is 0.4 mass. % Was low. In the time-of-flight secondary ion mass spectrometry, the detected amounts of C 3 H 3 O 3 ions and C 3 H 4 O 2 ions were 0.21 times the detected amount of Cu + ions and 0. It was as large as .48 times. As a result, the low temperature sinterability was poor and the bonding strength was low at 4 MPa and 8 MPa.

比較例3では、pH10のアルカリ性下で還元剤を添加混合したため、液中で銅イオンが水酸化銅(II)になり、粒子の製造収率が80%と高くなかった。また液中で粒成長が生じてしまい、得られた接合材料用粒子のBET比表面積が1.8m2/gと小さくまたBET径が373nmと大きく、有機保護膜の質量割合も0.3質量%と低かった。また飛行時間型二次イオン質量分析では、C333 -イオンとC342 -イオンのそれぞれの検出量が、Cu+イオンの検出量に対して0.30倍と0.50倍と大きかった。またC5以上のイオンの検出量がCu+イオンの検出量に対して0.010倍と大きかった。これにより、低温焼結性が悪く、接合強度も4MPa及び8MPaと低かった。 In Comparative Example 3, since the reducing agent was added and mixed under an alkaline condition of pH 10, copper ions became copper (II) hydroxide in the liquid, and the production yield of particles was not high at 80%. Also, grain growth occurs in the liquid, the BET specific surface area of the obtained bonding material particles is as small as 1.8 m 2 / g, the BET diameter is as large as 373 nm, and the mass ratio of the organic protective film is 0.3 mass. % Was low. In time-of-flight secondary ion mass spectrometry, the detected amounts of C 3 H 3 O 3 ions and C 3 H 4 O 2 ions are 0.30 times and 0 times the detected amount of Cu + ions. It was as large as 50 times. The detected amount of C 5 or more ions was as large as 0.010 times the detected amount of Cu + ions. As a result, the low temperature sinterability was poor and the bonding strength was low at 4 MPa and 8 MPa.

比較例4及び5では、還元剤としてギ酸アンモニウム及びギ酸を用いたため、クエン酸銅の還元が進まず、目標とする粒子を製造できなかった。   In Comparative Examples 4 and 5, since ammonium formate and formic acid were used as the reducing agents, the reduction of copper citrate did not proceed and the target particles could not be produced.

比較例6では、合成液を70℃で1時間しか加熱しなかったため、クエン酸銅の還元が完了せず、目標とする粒子を製造できなかった。   In Comparative Example 6, since the synthetic solution was heated at 70 ° C. for only 1 hour, reduction of copper citrate was not completed, and target particles could not be produced.

比較例7では、合成液を70℃で3時間と長時間加熱したため、クエン酸銅の還元が進み過ぎ、液中で粒成長が生じてしまい、得られた接合材料用粒子のBET比表面積が2.5m2/gと小さくまたBET径が268nmと大きく、有機保護膜の質量割合も0.4質量%と低かった。飛行時間型二次イオン質量分析では、C333 -イオンの検出量が、Cu+イオンの検出量に対して0.04倍と小さかった。これにより、低温焼結性が悪く、接合強度も10MPaと低かった。 In Comparative Example 7, since the synthetic liquid was heated at 70 ° C. for a long time of 3 hours, the reduction of copper citrate proceeded too much, and grain growth occurred in the liquid, and the BET specific surface area of the obtained bonding material particles was The BET diameter was as small as 2.5 m 2 / g, the BET diameter was as large as 268 nm, and the mass ratio of the organic protective film was as low as 0.4 mass%. In the time-of-flight secondary ion mass spectrometry, the detected amount of C 3 H 3 O 3 ions was 0.04 times smaller than the detected amount of Cu + ions. As a result, the low-temperature sinterability was poor and the bonding strength was as low as 10 MPa.

比較例8では、合成液を85℃の高温で1.5時間加熱したため、クエン酸銅の還元が進み過ぎ、液中で粒成長が生じてしまい、得られた接合材料用粒子の比表面積が2.9m2/gと小さくまたBET径が231nmと大きかった。飛行時間型二次イオン質量分析では、C333 -イオンとC342 -イオンのそれぞれの検出量が、Cu+イオンの検出量に対して0.03倍と0.04倍と小さかった。これにより、低温焼結性が悪く、接合強度も12MPaと低かった。 In Comparative Example 8, since the synthetic solution was heated at a high temperature of 85 ° C. for 1.5 hours, the reduction of copper citrate proceeded too much, and grain growth occurred in the solution, so that the specific surface area of the obtained bonding material particles was It was as small as 2.9 m 2 / g and had a large BET diameter of 231 nm. The time-of-flight secondary ion mass spectrometry, C 3 H 3 O 3 - ions and C 3 H 4 O 2 - each of the detected amount of ions, and 0.03 times the detected amount of Cu + ions 0. It was as small as 04 times. As a result, the low-temperature sinterability was poor and the bonding strength was as low as 12 MPa.

比較例9では、合成液を55℃の低温で2.5時間加熱したため、クエン酸銅の還元が完了せず、目標とする粒子を製造できなかった。   In Comparative Example 9, since the synthetic liquid was heated at a low temperature of 55 ° C. for 2.5 hours, reduction of copper citrate was not completed and target particles could not be produced.

これに対して、表1〜表6から明らかなように、実施例1〜11では、pH3以上pH7未満の酸性下で還元剤を添加混合し、還元剤としてヒドラジン一水和物及び無水ヒドラジンを用い、合成液の加熱時の最高温度を60℃以上80℃以下とし、その保持時間を1.5時間以上2.5時間以下にしたため、接合材料用粒子の製造収率は90%以上97%以下と高く、BET比表面積は3.5m2/g以上7.5m2/g以下と大きかった。BET径は89nm以上192nmと小さかった。また有機保護膜の質量割合は、0.5質量%以上2.0質量%以下であり、母体粒子の銅ナノ粒子を完全に被覆していた。また飛行時間型二次イオン質量分析では、C333 -イオンとC342 -イオンのそれぞれの検出量が、Cu+イオンの検出量に対して0.05倍以上0.2倍以下の範囲にあって、C5以上のイオンの検出量がCu+イオンの検出量に対して0.005倍未満であった。また有機保護膜の分解量割合は、75質量%以上88質量%以下の高い割合で分解し、有機保護膜の残渣が少なかった。また接合材料用粒子の焼成時の発生ガス成分は、N2、H2O、CO2、C36Oであった。これらのことから、接合温度を200℃以上300℃以下の範囲で15MPa以上52MPa以下という接合体として良好な接合強度が得られた。 On the other hand, as is clear from Tables 1 to 6, in Examples 1 to 11, a reducing agent was added and mixed under acidic conditions of pH 3 or more and less than pH 7, and hydrazine monohydrate and anhydrous hydrazine were used as the reducing agent. Since the maximum temperature during heating of the synthetic solution was set to 60 ° C. or higher and 80 ° C. or lower and the holding time was set to 1.5 hours or more and 2.5 hours or less, the production yield of the bonding material particles was 90% or more and 97% or more. The BET specific surface area was as large as 3.5 m 2 / g or more and 7.5 m 2 / g or less. The BET diameter was as small as 89 nm or more and 192 nm. The mass ratio of the organic protective film was 0.5 mass% or more and 2.0 mass% or less, and the copper nanoparticles of the mother particles were completely covered. In time-of-flight secondary ion mass spectrometry, the detected amount of each of C 3 H 3 O 3 ion and C 3 H 4 O 2 ion is 0.05 times or more the detected amount of Cu + ion. In the range of 0.2 times or less, the detected amount of C 5 or more ions was less than 0.005 times the detected amount of Cu + ions. In addition, the decomposition rate of the organic protective film was as high as 75% by mass or more and 88% by mass or less, and the residue of the organic protective film was small. The gas components generated during the firing of the particles for bonding material were N 2 , H 2 O, CO 2 , and C 3 H 6 O. From these facts, good joining strength as a joined body of 15 MPa or more and 52 MPa or less in the joining temperature range of 200 ° C. or more and 300 ° C. or less was obtained.

本発明の接合材料用粒子は、ファインピッチ用鉛フリーの接合用粒子として利用でき、この接合用粒子を原料として得られる接合用ペーストは、微細な電子部品の実装に好適に用いることができる。   The particles for bonding material of the present invention can be used as lead-free bonding particles for fine pitch, and the bonding paste obtained by using these bonding particles as a raw material can be suitably used for mounting fine electronic components.

10 接合材料用粒子
11 母体粉末(銅ナノ粒子)
12 有機保護膜
10 Particles for bonding material 11 Base powder (copper nanoparticles)
12 Organic protective film

Claims (6)

有機保護膜が銅ナノ粒子表面に形成された接合材料用粒子において、
前記接合材料用粒子は、BET比表面積が3.5m2/g以上8m2/g以下の範囲にあって、前記比表面積より換算したBET径が80nm以上200nm以下の範囲にあり、
前記有機保護膜が前記接合材料用粒子100質量%に対して0.5質量%以上2.0質量%以下の範囲で含まれ、
前記接合材料用粒子を飛行時間型二次イオン質量分析法(TOF−SIMS)を用いて分析したときに、C333 -イオンとC342 -イオンのそれぞれの検出量が、Cu+イオンの検出量に対して0.05倍以上0.2倍以下の範囲にあって、C5以上のイオンの検出量がCu+イオンの検出量に対して0.005倍未満の範囲にあることを特徴とする接合材料用粒子。
In the particles for bonding material in which the organic protective film is formed on the surface of the copper nanoparticles,
The particles for bonding material have a BET specific surface area of 3.5 m 2 / g or more and 8 m 2 / g or less, and a BET diameter converted from the specific surface area of 80 nm or more and 200 nm or less,
The organic protective film is included in the range of 0.5 mass% or more and 2.0 mass% or less with respect to 100 mass% of the particles for bonding material,
When the particles for bonding material were analyzed by time-of-flight secondary ion mass spectrometry (TOF-SIMS), the respective detected amounts of C 3 H 3 O 3 ions and C 3 H 4 O 2 ions were detected. However, the detection amount of Cu + ions is in the range of 0.05 times or more and 0.2 times or less, and the detection amount of C 5 or more ions is less than 0.005 times the detection amount of Cu + ions. Particles for a bonding material, characterized in that
不活性ガス雰囲気下、300℃の温度で30分加熱したときに前記有機保護膜が50質量%以上分解し、分解するガスが二酸化炭素ガス、窒素ガス、アセトンの蒸発ガス及び水蒸気である請求項1記載の接合材料用粒子。   The organic protective film decomposes by 50% by mass or more when heated at a temperature of 300 ° C. for 30 minutes in an inert gas atmosphere, and the decomposed gas is carbon dioxide gas, nitrogen gas, vaporized gas of acetone, and water vapor. 1. The particle for bonding material according to 1. 揮発性溶媒と、請求項1又は2記載された接合材料用粒子とを含む接合用ペースト。   A bonding paste containing a volatile solvent and the particles for bonding material according to claim 1 or 2. 室温のクエン酸銅の水分散液にpH調整剤を加えてpH3以上pH7未満にpH調整し、不活性ガス雰囲気下でこのpH調整したクエン酸銅の水分散液にヒドラジン化合物を添加混合し、不活性ガス雰囲気下でこの混合液を60℃以上80℃以下の温度に加熱し1.5時間以上2.5時間以下保持することにより、前記クエン酸銅を還元して銅ナノ粒子を生成させ、この銅ナノ粒子の表面に有機保護膜が形成された接合材料用粒子を製造する方法。   A pH adjuster is added to an aqueous dispersion of copper citrate at room temperature to adjust the pH to pH 3 or more and less than pH 7, and an hydrazine compound is added to and mixed with the aqueous dispersion of copper citrate whose pH is adjusted under an inert gas atmosphere, By heating this mixed solution to a temperature of 60 ° C. or higher and 80 ° C. or lower in an inert gas atmosphere and holding it for 1.5 hours or more and 2.5 hours or less, the copper citrate is reduced to produce copper nanoparticles. , A method for producing particles for bonding material, in which an organic protective film is formed on the surface of the copper nanoparticles. 揮発性溶媒と、請求項1又は2記載された接合材料用粒子又は請求項4記載の方法で製造された接合材料用粒子とを混合して接合用ペーストを調製する方法。   A method for preparing a bonding paste by mixing a volatile solvent with the particles for bonding material according to claim 1 or 2 or the particles for bonding material manufactured by the method according to claim 4. 請求項3記載の接合用ペースト又は請求項5記載の方法で調製された接合用ペーストを基板又は電子部品の表面に塗布して塗布層を形成する工程と、前記塗布層を介して前記基板と前記電子部品と重ね合わせる工程と、前記重ね合わせた前記基板と前記電子部品とを、30MPa以下の圧力を加えながら、不活性雰囲気下、200℃以上300℃以下の温度で加熱して前記塗布層を焼結することにより接合層を形成し、この接合層により前記基板と前記電子部品とを接合する工程とを含む接合体の製造方法。   A step of applying a bonding paste according to claim 3 or a bonding paste prepared by the method according to claim 5 on a surface of a substrate or an electronic component to form a coating layer, and the substrate through the coating layer. The step of stacking the electronic component and the coating layer by heating the stacked substrate and the electronic component at a temperature of 200 ° C. or more and 300 ° C. or less under an inert atmosphere while applying a pressure of 30 MPa or less. And a step of forming a bonding layer by sintering, and bonding the substrate and the electronic component by the bonding layer.
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