TW201229670A - Photosensitive resin composition, pattern structure, display device and partition - Google Patents
Photosensitive resin composition, pattern structure, display device and partition Download PDFInfo
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- TW201229670A TW201229670A TW100139090A TW100139090A TW201229670A TW 201229670 A TW201229670 A TW 201229670A TW 100139090 A TW100139090 A TW 100139090A TW 100139090 A TW100139090 A TW 100139090A TW 201229670 A TW201229670 A TW 201229670A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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Abstract
Description
201229670 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種感光性樹脂組成物、圖案構造物、 顯示裝置及間隔壁。 【先前技術】 近年’就製造顯示裝置等之方法而言,已報告如下之 方法:藉喷墨法等塗佈塑製程來製作構成該裝置等之一部 分的彩色濾光片、液晶顯示元件之ΙΤ0電極、有機電激發 光元件(以下,有時稱為「有機EL元件」)、電路配線基板 等之方法。在如此之喷墨法等塗佈型製程中利用使用感光 性樹脂組成物所形成之間隔壁。 例如利用有機EL元件之顯示裝置中’ 3種有機EL元201229670 6. TECHNOLOGICAL FIELD OF THE INVENTION The present invention relates to a photosensitive resin composition, a pattern structure, a display device, and a partition wall. [Prior Art] In the method of manufacturing a display device or the like, a method of manufacturing a color filter or a liquid crystal display element constituting a part of the device or the like by a coating process such as an inkjet method has been reported. A method such as an electrode, an organic electroluminescence device (hereinafter sometimes referred to as "organic EL device"), or a circuit wiring substrate. In the coating type process such as the ink jet method, a partition wall formed using a photosensitive resin composition is used. For example, three kinds of organic EL elements in a display device using an organic EL element
件設於支撐基板上。亦即,(1)射出紅色光的紅色有機EL 元件、(2)射出綠色光的綠色有機EL元件、(3)射出藍色光 的藍色有機EL元件分別設於支撐基板上。於支撐基板上一 般設有規定像素圖案之間隔壁,上述3種有機EL元件係藉 由上述間隔壁而區劃之區隔(亦即被間隔壁包圍之區域)分 別整列而配置。 各有機EL元件係藉由於被間隔壁3包圍之區域5依序 詹合第1電極2、有機EL層4及第2電極7所形成(參照 第1圖)。 。參照第2圖而說明有機EL層4之形成方法。首先,於 支撐基板1上形成第1電極2及間隔壁3。然後,將成為 有$ EXI 4之材料與溶劑所構成的印墨6供給至被間隔壁 4 323613 201229670 3包圍之區域5(第2A圖)。所供給之印墨6係容納於被間 隔壁3包圍之區域5(第2B圖)’在該區域5内藉印墨6之 k 溶劑蒸發而形成有機EL層4(第2C圖)。供給如此之印墨6 f 的塗佈型製程已提出喷墨法或噴嘴塗佈法等。 & 此處,規定像素圖案之間隔壁3係藉由使用感光性樹 脂組成物之光微影蝕刻來形成圖案。要求於塗佈型製程所 利用之間隔壁3係必須將供給至被間隔壁包圍之區域5内 的印墨6確實地收容並保持’以免潤濕擴展至未意圖之 處,即具有所謂的撥液性。 用以形成顯示上述撥液性之構件的感光性樹脂組成 物,已知一種感光性樹脂組成物,其係含有例如使具有碳 原子數4至6之氟烧基的α位取代丙埽酸酯聚合所得到的 聚合物(專利文獻1)。 [先前技術文獻] [專利文獻] 專利文獻1 ··日本特開2〇〇8_287251號公報 【發明内容】 (發明欲解決之課題) 然而’使用自以往所提出之感光性樹脂組成物而形成 如上述間隔壁之圖案構造物時,因為形成具有適度的撥液 性之間隔壁’雖供給至被間隔壁包圍之區域内的印墨係被 容納、保持’但所得到之圖案構造物的财熱性低之安定性 上有問題。又’為形成有機EL it件,於支撐基板上圖案形 成間隔壁時’於形成圖案之部位以外的部位殘留感光性樹 5 323613 201229670 脂組成物之殘渣,殘渣造成用以形成有機EL層的印墨被彈 開’形成塗佈獏時,有時未必能形成膜厚充分均勻且平坦 的塗佈膜。 因此,本發明之目的係提供一種撥液性、耐熱性優異, 且於圖案形成部以外之部位感光性樹脂組成物不形成殘渣 而殘留’且可形成圖案之負塑感光性樹脂組成物。 (用以解決課題之手段) 本發明係提供以下之感光性樹脂組成物、圖案構造 物、顯示裝置及間隔壁。 [1] 一種感光性樹脂組成物,其係含有鹼可溶性樹脂(A)、 氟系撥液劑(B)、交聯劑(c)及酸產生劑(]))之負型感光性樹 脂組成物, 氟系撥液劑(B)為含有源自於具有碳原子數4至6的氟 烷基的不飽和化合物之結構單元的加成聚合物,且氟系撥 液劑(B)之添加比率,相對於組成物中之全固形份為〇 〇1 至1. 0重量%。 [2 ]如[1 ]項之感光性樹脂組成物,其進一步含有溶齊1 ( e )。 [3] 如[1]或[2]項之感光性樹脂組成物,其中鹼可溶性樹 脂(Α)含有酚樹脂。 [4] 如[1]至[3]項中任一項之感光性樹脂組成物,其中鹼 可溶性樹脂(Α)含有盼酸清漆樹脂。 [5] 如[1]至[4]項中任一項之感光性樹脂組成物,其中氟 系撥液劑(Β)為含有源自於由不飽和羧酸及不飽和敌酸奸 所構成之群中選出的至少一種之結構單元的加成聚合物。 323613 6 201229670 [6]如[1]至[5]項中任一項之感光性樹脂組成物,其中氟 系撥液劑(B )為含有源自於具有碳原子數2至4的環狀醚結 ' 構的不飽和化合物之結構單元的加成聚合物。 v [7] —種圖案構造物,其係藉由使用如[1]至[6]項中任一 項之感光性樹脂組成物而形成者。 [8] —種顯示裝置,其含有如[7]項之圖案構造物。 [9] 一種噴墨用之間隔壁,其含有如[7]項之圖案構造物。 (發明之效果) 本發明係提供一種撥液性、耐熱性優異,且於圖案形 成部以外之部位感光性樹脂組成物不形成殘渣而殘留,且 可形成圖案之負型感光性樹脂組成物。 【實施方式】 本發明的感光性樹脂組成物係含有下述(A)、(B)、(C) 及(D)之負型的感光性樹脂組成物。 (A) 鹼可溶性樹脂 (B) 氟系撥液劑 (C) 交聯劑 (D )酸產生劑 又,在本說明書中,各成分之例示化合物係只要無特 別聲明,可單獨或組合而使用。 本發明之感光性樹脂組成物所含有的氟綠液劑⑻ 係含有源自於具有碳原子數4至6的氟烧基的不飽和化合 ^例如具有氟齡及碳1雙鍵之残和化合物)之結構 單7L的加成Λ“物且其添加比率相對於感光性樹脂組成 323613 7 201229670 物中之全固形份為〇. 01至1. 〇重量%。 氟系撥液劑(Β)係例如含有源自於具有碳原子數4至’6 的全氟烷基的不飽和化合物(d)(以下,有時稱為「不飽和 化合物(d)」)之結構單元的聚合物。 不飽和化合物(d)係可舉例如以下述式(d-Ο)所示之化 合物。 ^^^0—Xd一Rf (d-0) [式(d-Ο)中,Rf表示碳原子數4至6的氟烷基。The member is disposed on the support substrate. That is, (1) a red organic EL element that emits red light, (2) a green organic EL element that emits green light, and (3) a blue organic EL element that emits blue light are provided on the support substrate. A partition wall having a predetermined pixel pattern is generally provided on the support substrate, and the three types of organic EL elements are arranged in a row by the partition walls (i.e., the regions surrounded by the partition walls). Each of the organic EL elements is formed by the first electrode 2, the organic EL layer 4, and the second electrode 7 in the region 5 surrounded by the partition walls 3 (see Fig. 1). . A method of forming the organic EL layer 4 will be described with reference to Fig. 2 . First, the first electrode 2 and the partition 3 are formed on the support substrate 1. Then, the ink 6 composed of the material and solvent having the EXI 4 is supplied to the region 5 surrounded by the partition wall 4 323613 201229670 3 (Fig. 2A). The supplied ink 6 is accommodated in a region 5 (Fig. 2B) surrounded by the partition wall 3, and the organic solvent layer 4 is formed by evaporation of the k solvent of the ink 6 in the region 5 (Fig. 2C). A coating type process for supplying such an ink 6f has been proposed by an ink jet method, a nozzle coating method, or the like. & Here, the partition wall 3 defining the pixel pattern is patterned by photolithography using a photosensitive resin composition. It is required that the partition wall 3 used in the coating type process must positively accommodate and hold the ink 6 supplied into the region 5 surrounded by the partition wall to prevent the wetting from spreading to an unintended place, that is, having a so-called dialing Liquid. A photosensitive resin composition for forming a photosensitive resin composition for exhibiting the liquid repellency, and a photosensitive resin composition containing, for example, an α-substituted propionate having a fluoroalkyl group having 4 to 6 carbon atoms is known. The obtained polymer was polymerized (Patent Document 1). [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Application Laid-Open No. Hei. No. Hei. In the pattern structure of the partition wall, the partition wall which has an appropriate liquid repellency is provided, and the ink supplied to the area surrounded by the partition wall is accommodated and held, but the obtained pattern structure is rich in heat. There is a problem with low stability. Further, in order to form the organic EL it piece, when the partition wall is patterned on the support substrate, the residue of the photosensitive tree remains in the portion other than the portion where the pattern is formed, and the residue causes the ink to form the organic EL layer. When the ink is bounced to form a coating crucible, a coating film having a sufficiently uniform and flat film thickness may not necessarily be formed. In view of the above, it is an object of the present invention to provide a negative-sensitive photosensitive resin composition which is excellent in liquid-repellent property and heat-resistance and which does not form a residue in a portion other than the pattern forming portion and which forms a pattern. (Means for Solving the Problem) The present invention provides the following photosensitive resin composition, pattern structure, display device, and partition wall. [1] A photosensitive resin composition comprising a negative photosensitive resin containing an alkali-soluble resin (A), a fluorine-based liquid repellent (B), a crosslinking agent (c), and an acid generator (])) The fluorine-based liquid repellent (B) is an addition polymer containing a structural unit derived from an unsaturated compound having a fluoroalkyl group having 4 to 6 carbon atoms, and the fluorine-based liquid repellent (B) is added. 0重量百分比。 The ratio of the total solids in the composition is 〇〇1 to 1.0% by weight. [2] The photosensitive resin composition according to [1], which further contains a solvent 1 (e). [3] The photosensitive resin composition of [1] or [2], wherein the alkali-soluble resin (Α) contains a phenol resin. [4] The photosensitive resin composition according to any one of [1] to [3] wherein the alkali-soluble resin (Α) contains an acid varnish resin. [5] The photosensitive resin composition according to any one of [1] to [4] wherein the fluorine-based liquid repellent (Β) is composed of an unsaturated carboxylic acid and an unsaturated enemy An addition polymer of at least one structural unit selected from the group. The photosensitive resin composition of any one of [1] to [5], wherein the fluorine-based liquid repellent (B) contains a ring derived from having 2 to 4 carbon atoms. An addition polymer of a structural unit of an etherate structure of an unsaturated compound. v [7] A pattern structure formed by using the photosensitive resin composition according to any one of [1] to [6]. [8] A display device comprising the pattern structure of item [7]. [9] A partition wall for inkjet comprising the pattern structure of the item [7]. (Effects of the Invention) The present invention provides a negative photosensitive resin composition which is excellent in liquid repellency and heat resistance and which remains in the photosensitive resin composition other than the pattern forming portion without forming a residue. [Embodiment] The photosensitive resin composition of the present invention contains a negative photosensitive resin composition of the following (A), (B), (C) and (D). (A) Alkali-soluble resin (B) Fluoride-based liquid repellent (C) Cross-linking agent (D) Acid generator Further, in the present specification, exemplary compounds of the respective components may be used singly or in combination unless otherwise specified. . The fluorogreen agent (8) contained in the photosensitive resin composition of the present invention contains an unsaturated compound derived from a fluoroalkyl group having 4 to 6 carbon atoms, for example, a residue having a fluorine age and a carbon 1 double bond. The addition of the structure 7L is "the substance and the addition ratio thereof is relative to the photosensitive resin composition 323613 7 201229670. The total solid content is 〇. 01 to 1. 〇% by weight. Fluoride-based liquid repellent (Β) system For example, a polymer containing a structural unit derived from an unsaturated compound (d) having a perfluoroalkyl group having 4 to 6 carbon atoms (hereinafter sometimes referred to as "unsaturated compound (d)"). The unsaturated compound (d) is, for example, a compound represented by the following formula (d-Ο). ^^^0—Xd—Rf (d-0) [In the formula (d-Ο), Rf represents a fluoroalkyl group having 4 to 6 carbon atoms.
Rd表示氫原子、鹵原子、氰基、苯基、苯曱基或碳原 子數1至21之烷基,該烷基所含有的氫原子可經i原子或 羥基取代。 义£1表示單鍵、碳原子數1至10之2價的脂肪族烴基、 碳原子數3至10的2價之脂環式烴基或碳原子數6至12 之2價的芳香族烴基,該脂肪族烴基及該脂環式烴基所含 有之1個以上的-CH2_可經、_C0-、-C00_、-CeK伸苯 基)、_NRa_、_S_或-S〇2_取代]。Rd represents a hydrogen atom, a halogen atom, a cyano group, a phenyl group, a phenylhydrazine group or an alkyl group having 1 to 21 carbon atoms, and the hydrogen atom contained in the alkyl group may be substituted with an i atom or a hydroxyl group. The formula £1 represents a single bond, a divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms, a divalent alicyclic hydrocarbon group having 3 to 10 carbon atoms, or a divalent aromatic hydrocarbon group having 6 to 12 carbon atoms. The aliphatic hydrocarbon group and one or more -CH2_ contained in the alicyclic hydrocarbon group may be substituted by _C0-, -C00_, -CeK phenyl), _NRa_, _S_ or -S〇2_.
Rf宜為碳原子數4至6之全氟烷基。其例可舉例如全 氟丁基、全氟己基,宜為全氟丁基。Rf is preferably a perfluoroalkyl group having 4 to 6 carbon atoms. For example, perfluorobutyl group, perfluorohexyl group, and preferably perfluorobutyl group are mentioned.
Rd中之鹵原子係例示F、Cl、Br、I。The halogen atom in Rd is exemplified by F, Cl, Br, and I.
Rd中之碳原子數1至21的烷基係可舉例如曱基、乙 基、正丙基、正丁基、正戊基、正己基、正庚基、正辛基、 正壬基、正癸基等直鏈狀烷基; 異丙基、異丁基、第二丁基、異戊基、1-曱基戊基、 323613 201229670 2-甲基戊基、3-甲基戊基、4-甲基戊基、1-乙基丁基、2-乙基丁基、卜甲基己基、2-甲基己基、3-甲基己基、4-曱 . 基己基、5_曱基己基、卜乙基戊基、2-乙基戊基、3-乙基 f 戊基、卜丙基丁基、卜甲基庚基、2-甲基庚基、3-甲基庚 基、4-曱基庚基、5-甲基庚基、6-甲基庚基、1-乙基己基、 2 -乙基己基、3-乙基己基、4-乙基己基、2-丙基戊基、1-丁基丁基、1-丁基-2-甲基丁基、1-丁基-3-曱基丁基、第 三丁基、1,1-二曱基丙基、1,1一二甲基丁基、i,2-二曱基 丁基、1,3-二曱基丁基、2, 3-二甲基丁基、1-乙基-2-曱基 丙基、1,1-二甲基戊基、1,2-二甲基戊基、1,3-二曱基戊 基、1,4-二曱基戊基、2, 2-二曱基戊基、2, 3-二曱基戊基、 2, 4-二曱基戊基、3, 3-二甲基戊基、3, 4-二曱基戊基、1- 乙基-1-甲基丁基、2-乙基-3-曱基丁基等分枝鏈狀烷基等。 Rd宜為氫原子、鹵原子及甲基。 在Xd中之碳原子數1至1〇的2價之脂肪族烴基係可舉 例如亞曱基、伸乙基、丙烷—1,3—二基、丙烷—12一二基、 丁燒-1,4-二基、丁烷-1,3-二基、丁烷-1,2-二基、戊烷 —基、己烧-1,6-二基、庚烧-1,7-二基、辛烧-l,8— 二基等烷二基。 在Xd中之碳原子數3至10的2價之脂環式烴基係可舉 例如環丙烷二基、環丁烷二基、環戊烷二基、環己烷二基、 環庚烷二基、環癸烷二基等。 在Xd中之碳原子數6至12的2價之芳香族烴基係可舉 例如伸苯基、萘二基等。 9 323613 201229670The alkyl group having 1 to 21 carbon atoms in Rd may, for example, be an anthracenyl group, an ethyl group, a n-propyl group, a n-butyl group, a n-pentyl group, a n-hexyl group, a n-heptyl group, an n-octyl group, a n-decyl group or a positive group. Linear alkyl such as fluorenyl; isopropyl, isobutyl, t-butyl, isopentyl, 1-decylpentyl, 323613 201229670 2-methylpentyl, 3-methylpentyl, 4 -methylpentyl, 1-ethylbutyl, 2-ethylbutyl, methylhexyl, 2-methylhexyl, 3-methylhexyl, 4-indolyl, 5-hexylhexyl, 5-ethylpentyl Base, 2-ethylpentyl, 3-ethylf-pentyl, propylpropyl, benzyl-heptyl, 2-methylheptyl, 3-methylheptyl, 4-decylheptyl, 5-methyl Heptyl, 6-methylheptyl, 1-ethylhexyl, 2-ethylhexyl, 3-ethylhexyl, 4-ethylhexyl, 2-propylpentyl, 1-butylbutyl, 1- Butyl-2-methylbutyl, 1-butyl-3-mercaptobutyl, tert-butyl, 1,1-dimercaptopropyl, 1,1-dimethylbutyl, i, 2 - Dimercaptobutyl, 1,3-dimercaptobutyl, 2,3-dimethylbutyl, 1-ethyl-2-mercaptopropyl, 1,1-dimethylpentyl, 1 ,2-dimethylpentyl, 1,3-dioxin Pentyl, 1,4-dioxylpentyl, 2,2-didecylpentyl, 2,3-dimercaptopentyl, 2,4-didecylpentyl, 3,3-dimethyl A branched chain alkyl group such as a pentyl group, a 3, 4-didecylpentyl group, a 1-ethyl-1-methylbutyl group or a 2-ethyl-3-mercaptobutyl group. Rd is preferably a hydrogen atom, a halogen atom or a methyl group. The divalent aliphatic hydrocarbon group having 1 to 1 carbon atom in Xd may, for example, be an anthracenylene group, an exoethyl group, a propane-1,3-diyl group, a propane-12-diyl group or a dibutyl group-1. ,4-diyl, butane-1,3-diyl, butane-1,2-diyl, pentane-yl, hexyl-1,6-diyl, heptane-1,7-diyl , octyl-l,8-diyl alkanediyl. The divalent alicyclic hydrocarbon group having 3 to 10 carbon atoms in Xd may, for example, be a cyclopropanediyl group, a cyclobutanediyl group, a cyclopentanediyl group, a cyclohexanediyl group or a cycloheptanediyl group. , cyclodecanediyl and the like. The divalent aromatic hydrocarbon group having 6 to 12 carbon atoms in Xd may, for example, be a phenylene group or a naphthalene diyl group. 9 323613 201229670
Re係可例示碳原子數1至4之脂肪族烴基。 脂肪族烴基及該脂環式烴基所含有之-CH2-經-0-、 -CO-、-COO-、-C6H4-(伸苯基)、-NRa-、-S-或-S〇2-取代之 Xd,係可舉例以式(xd-Ι)至式(xd-ΙΟ)所示之基。The Re group is exemplified by an aliphatic hydrocarbon group having 1 to 4 carbon atoms. The aliphatic hydrocarbon group and the -CH2- contained by the alicyclic hydrocarbon group are -0-, -CO-, -COO-, -C6H4-(phenylene), -NRa-, -S- or -S〇2- The substituted Xd may be exemplified by the formula (xd-Ι) to the formula (xd-ΙΟ).
(xd-4) (xd-5) (xd-6) (xd-7)(xd-4) (xd-5) (xd-6) (xd-7)
Xd宜為碳原子數1至6之烷二基,更宜為伸乙基。 以式(d-Ο)所示之化合物,可舉例如下表所示之化合物 (d-Ι)至化合物(d-94)等。表中,表示於Xd攔之式編號係表 示上述例示之基的式編號。又,例如,化合物(d-1)係以下 述式(d-Ι)所示之化合物。Xd is preferably an alkanediyl group having 1 to 6 carbon atoms, more preferably an ethyl group. The compound represented by the formula (d-Ο) may, for example, be a compound (d-Ι) to a compound (d-94) shown in the following table. In the table, the number indicated by Xd is the formula number of the above-exemplified base. Further, for example, the compound (d-1) is a compound represented by the following formula (d-Ι).
10 323613 201229670 [表 1-1 ] 化合物 Rd xd 〇 d-1 H c2h< d-2 F CzH4 ^Y%—xd—c4f9 d-3 Cl C2H4 Rd d-4 Br C2H4 d-5 I C2H4 d-6 cf3 C2H4 d-7 CHa C2H4 d-8 CN C2H4 d-9 CeHs C2H4 d-10 CHz-CeHs C2H4 d-11 H 單鍵 d-12 F 單鍵 d-13 Cl 單鍵 d-14 Br 單鍵 d-15 I 單鍵 d-16 CFa 單鍵 d-17 CHs 單鍵 d-18 H (xd-Ι) d-19 Cl (xd-1) d-20 ch3 (xd-1) d-21 H (xd-2) d-22 Cl (xd-2) d-23 CHs (xd-2) d-24 H (xd-3) d-25 Cl (xd-3) d-26 CHa (xd-3) d-27 H (xd-4) d-28 Cl (xd-4) d-29 CHa (xd-4) d-30 H (xd-5) d-31 Cl (xd-5) d-32 CH3 (xd-5) 11 323613 〇 d-33 H (xd-6) d-34 Cl (xd-6) V^o-xd—c4f9 d-35 ch3 (xd-6) Rd d-36 H (xd-7) d-37 Cl (xd-7) d-38 CH3 (xd-7) d-39 H (xd-8) d-40 Cl (xd-8) d-41 CH3 (xd-8) d-42 H (xd-9) d-43 Cl (xd-9) d-44 ch3 (xd-9) d-45 H (xd-10) d-46 Cl (xd-10) d-47 CH3 (xd-10) 201229670 [表 1-2] [表 2-1 ] 化合物 Rd xd o d-48 H C2H4 d-49 F CeH4 d-50 Cl CiH4 R d-51 Br C2H4 d-52 I C2H4 d-53 CFi C2H4 d-54 CHa C2H4 d-55 CN C2H4 d-56 c晶 C2H4 d-57 CH2-C6H5 C2H4 d-58 H 單鍵 d-59 F 單鍵 d-60 Cl 單鍵 d-61 Br 單鍵 d-62 I 單鍵 d-63 cf3 單鍵 12 323613 201229670 [表 2-2 ] ο I I d-64 CHa 單鍵 Xd C6F13 d-65 H (xd-1) d-66 Cl (xd-1) R d-67 CHa (xd-1) d-68 H (xd-2) d-69 Cl (xd-2) d-70 CHs (xd-2) d-71 H Cxd-3) d-72 Cl (xd-3) d-73 CHa (xd-3) d-74 H (xd-4) d-75 Cl (xd-4) d-76 CHa (xd-4) d-77 H (xd-5) d-78 Cl (xd-5) d-79 CHa (xd-5) d-80 H (xd-6) d-81 Cl (xd-6) d-82 CHa (xd-6) d-83 H (xd-7) d-84 Cl (xd-7) d-85 CH3 (xd-7) d-86 H (xd-8) d-87 Cl (xd-8) d-88 CHs (xd-8) d-89 H (xd-9) d-90 Cl (xd-9) d-91 ch3 (xd-9) d-92 H (xd-10) d-93 Cl (xd-10) d-94 CHa (xd-10) 13 323613 201229670 氟系撥液劑(B)宜為含有源自於不飽和化合物(d)之結 構單元與源自於後述之不飽和化合物(a)之結構單元的樹 脂,更宜為含有源自於不飽和化合物(d)之結構單元與源自 於不飽和化合物(a)之結構單元與源自於後述之不飽和化 合物(b)之結構單元的樹脂。藉由氟系撥液劑(B)含有源自 於不飽和化合物(a)之結構單元,使顯像性優異,故有抑制 源自於殘渣或顯像之不均的傾向。藉由氟系撥液劑(B)含有 源自於不飽和化合物(b)之結構單元,而有财溶劑性優異之 傾向。又,氟系撥液劑(B)亦可含有源自於後述之不飽和化 合物(c)之結構單元。 I系撥液劑(B)為不飽和化合物(a)與不飽和化合物(d) 之共聚物時,源自於各單體之結構單元的比率,相對於構 成氟系撥液劑(B)之結構單元的合計,宜在以下範圍中。 源自於不飽和化合物(a)之結構單元:5至40重量%(更 佳係10至30重量°/〇) 源自於不飽和化合物(d)之結構單元:60至95重量% (更佳係70至90重量%) 氣系撥液劑(B)為不飽和化合物(a)、不飽和化合物(b) 及不飽和化合物(d)之共聚物時,源自於各單體之結構單元 的比率,相對於構成氟系撥液劑(B )之結構單元的合計莫耳 數,宜在以下範圍中。 源自於不飽和化合物(a)之結構單元:5至40重量%(更 佳係10至30重量%) 源自於不飽和化合物(b)之結構單元:5至80重量%(更 14 323613 201229670 佳係10至70重量%) 源自於不飽和化合物(d)之結構單元:10至80重量% , (更佳係20至70重量°/〇) IL系撥液劑(B)為不飽和化合物(a)、不飽和化合物 (b)、不飽和化合物(c)及不飽和化合物(d)之共聚物時,源 自於各單體之結構單元的比率,相對於構成氟系撥液劑(B) 之結構單元的合計莫耳數,宜在以下範圍中。 源自於不飽和化合物(a)之結構單元:5至40重量%(更 佳係10至30重量°/〇) 源自於不飽和化合物(b)之結構單元:5至80重量%(更 佳係10至70重量%) 源自於不飽和化合物(c)之結構單元:10至50重量% (更佳係20至40重量°/〇) 源自於不飽和化合物(d)之結構單元:10至80重量% (更佳係20至70重量%) 各結構單元之比率若在上述範圍中,有撥液性、顯像 性優異之傾向。 氟系撥液劑(B)之換算成聚苯乙烯的重量平均分子量 宜為3000至20000,更宜為5000至15000。氟系撥液劑(B) 之重量平均分子量若在前述範圍中,有塗佈性優異之傾 向,又,顯像時很難產生曝光部之膜減少,進一步,易藉 顯像除去非曝光部。 氟系撥液劑(B)之酸價係20至200mgKOH/g,宜為40 至 150mgKOH/g。 15 323613 201229670 感光性樹脂組成物中之氟系撥液劑(B)的含量在鹼可 溶性樹脂(A)及交聯劑(C)之合計重量為1〇〇重量份時,宜 為〇· 001至10重量份,更宜為〇. 01至5重量份。氟系撥 液劑(B)之含量若在前述範圍中,圖案形成時有顯像性優異 且所得到之圖案(上面)的撥液性優異的傾向。 不飽和化合物(a)係由不飽和羧酸及不飽和羧酸酐所 構成之群中選出的不飽和化合物。不飽和化合物(a)可舉例 如丙烯酸、甲基丙烯酸、巴豆酸、鄰乙烯基苯曱酸、間乙 烯基苯甲酸、對乙烯基苯甲酸等不飽和單羧酸; 馬來酸、富馬酸、檸康酸、中康酸、伊康酸、3_乙烯 基酞酸、4-乙烯基酞酸、3,4,5,6_四氫酞酸、^卜四 氫酞酸、二曱基四氫酞酸、丨,4_環己烯二羧酸等不飽和二 羧酸; 曱基-5-降冰片烯-2, 3-二羧酸、5-羧基雙環[2. 2· 1] 庚-2-烯、5, 6-二羧基雙環[2. 2.1]庚-2-烯、5-羧基-5-甲 基雙環[2. 2. 1]庚-2-烯、5-羧基-5-乙基雙環[2. 2. 1]庚-2- 婦、5-致基-6一甲基雙環[2.21]庚_2一烯、5_羧基_6_乙基 雙環[2. 2. 1]庚-2-烯等含有羧基之雙環不飽和化合物; 馬來酸酐、檸康酸酐、伊康酸酐、3_乙烯基酞酸酐、 4-乙烯基酞酸酐、3, 4, 5, 6_四氫酞酸酐、丨,2, 3, 6_四氫酞 酸酐、二甲基四氫酞酸酐、5, 6_二羧基雙環[2. 2. “庚^一 婦酸軒(納迪克酸酐(Himic anhydride))等不飽和二幾酸 酐; 號泊酸單[2-(甲基)丙烯醯氧基乙基]酯、酞酸單 16 323613 201229670 [2-(曱基)丙烯醯氧基乙基]酯等2價以上之多價羧酸的不 飽和單[(曱基)丙烯醯氧基烷基]酯; 可舉例如像是(羥基曱基)丙烯酸這般在同一分子 中含有經基及叛基之不飽和丙稀酸醋等。 此等之中,從共聚合反應性之觀點或驗溶解性之觀點 來看宜使用丙烯酸、甲基丙烯酸、馬來酸酐等。 在本說明書中,所謂「(曱基)丙婦g曼」表示由丙稀酸 及甲基丙烯酸所構成之群中選出的至少一種。「(甲基)丙烯 醯基」及「(曱基)兩烯酸醋」等表記亦具有同樣的意義。 不飽和化&物(b)係具有碳原子數2至4之環狀醚(例 如環氧乙烧環、環氧丙燒環及四氫七南環(環氧丁烧環)所 群選出的至少-種)之不飽和化合物,宜為具有碳原 2 = 4之環_與乙稀性不飽和雙鍵之單體,更宜為 ,、有奴原子數2至4之it狀醚與(曱基) 不飽和化合物⑹可舉㈣具有魏m早體 化合物⑽(以下有時稱為「不飽和化合物(=之不= ¥氧丙燒基之讀和化合物⑽(町有 」,、有 合物⑽」)、具有叫w基之不姊化=不飽和化 有時稱為「不飽和化合物(M)」) (b3)(以下 不飽和化合物(bl)可舉例如具有 結構的不飽和化合物(bidkn 1進行環氡化之 (bl-Ι)」)、具有使環烯烴進行p時稱為「不餘和化合物 物㈨,以下有時稱為「不餘;不,和化合 不飽和化合細)叫_氧繼與(」甲基)⑽ 323613 17 201229670 之結構與 脂組成物之保存安定:異此等之單體,感光性樹 基rσ物⑻'1)可舉例如(?基)丙雜縮水甘油 ,乙U丙婦酸点―甲基縮水甘油基醋、(甲基)丙稀酸 苯曱甘絲^、縮水甘油紅烯絲、鄰-乙烯基 -乙檢土其“甘'由基趟、間''乙稀基笨甲基縮水甘油細、對 縮If/基齡甘油細、"基-㈣縣苯甲基 油基㈣、am乙烯基笨甲基縮水甘油細、 心甲基令乙稀基苯甲基縮水甘油基醚、2,3_雙(縮水甘 油基氧基甲基)苯乙稀、2, 4—雙(縮水甘油基氧基曱基)苯乙 烯、2’ 5-雙(縮水甘油基氧基曱基)笨乙烯、2, 6—雙(縮水甘 j基氧基甲基)苯乙烯、2, 3, 4_參(縮水甘油基氧基甲基) 笨乙烯、2, 3, 5-參(縮水甘油基氧基曱基)苯乙烯、2, 3,6- 參(縮水甘油基氧基曱基)苯乙烯、3, 4, 5—參(縮水甘油基氧 基曱基)苯乙烯、2, 4, 6-參(縮水甘油基氧基曱基)苯乙烯、 曰本特開平7-248625號公報所記載的化合物。 不飽和化合物(M-2)可舉例如乙烯基環己烯單氧化 物' 1,2-環氧基-4-乙烯基環己烧(例如Celloxide 2000 ; !^1(^1化學工業(股)製)、丙烯酸3,4-環氧基環己基甲基 酯(例如Cyclomer A400 ; Daicel化學工業(股)製)、曱基 丙稀酸3, 4-環氧基環己基甲醋(例如Cyclomer Ml00 ; Daicei化學工業(股)製)、以式g)所示之化合物、以式(II) 所示之化合物等。 323613 18 201229670 ^Χχΐτχ (I) (Π) 鴦 在式(I)及式(II)中,R1及r2分別獨立地表示氫原子、 或碳原子數1至4的烧基,該院基可經經基取代。 X1及X2分別獨立地表示單鍵、_R3_、*_R3_〇_、*_r3〜 S_、木-R3-NH-。 R3表示碳原子數1至6之烷二基。 *表示與0之鍵結。 以R1及R2表示之碳原子數1至4的烷基可舉例如甲 基、乙基、正丙基、異丙基、正丁基、第二丁基、第三丁 基等。 經羥基取代之碳原子數丨至4的烷基係可舉例如羥基 甲基、1-經基乙基、2-經基乙基、丄一經基丙基、2一經基丙 基、3-羥基丙基、卜羥基_丨_甲基乙基、2羥基一丨_甲基乙 基、1-經基丁基、2-經基丁基、3_經基丁基、4—經基丁基 等。 R及R2宜可舉例如氫原子、甲基、羥基甲基、卜羥基 乙基:2-羥基乙基,更宜可舉例如氫原子、甲基。 r所不之烧—基’可舉例如亞甲基、伸乙基、丙m 二基、丙烷-1,3-二基、丁烷夂4_二基、戊烷],5_二基、 己烧-1,6-二基等。 X及X2較佳係可舉例如單鍵、亞甲基、伸乙基H 0基* CH2CH2 0-基,更宜可舉例如單鍵hCH2_〇_ 323613 19 201229670 基,此處,*表示與〇之鍵結^ 以式(I)所示之化合物,可舉例如以式(M)至式(115) 所示之化合物等。較佳可舉例如式(1-1)、式Π-3)、式 (1-5)、式(1-7)、式(1-9)、式(卜⑴至式(1一15)。更佳係 可舉例如式(卜1)、式(1-7)、式(1-9)、式(1-15)。 〇 / 〇 ο h2c=ch-c-o Η2〇=ΟΗ—C—O—CH210 323613 201229670 [Table 1-1 ] Compound Rd xd 〇d-1 H c2h< d-2 F CzH4 ^Y%—xd—c4f9 d-3 Cl C2H4 Rd d-4 Br C2H4 d-5 I C2H4 d-6 Cf3 C2H4 d-7 CHa C2H4 d-8 CN C2H4 d-9 CeHs C2H4 d-10 CHz-CeHs C2H4 d-11 H Single bond d-12 F Single bond d-13 Cl Single bond d-14 Br Single bond d- 15 I single bond d-16 CFa single bond d-17 CHs single bond d-18 H (xd-Ι) d-19 Cl (xd-1) d-20 ch3 (xd-1) d-21 H (xd- 2) d-22 Cl (xd-2) d-23 CHs (xd-2) d-24 H (xd-3) d-25 Cl (xd-3) d-26 CHa (xd-3) d-27 H (xd-4) d-28 Cl (xd-4) d-29 CHa (xd-4) d-30 H (xd-5) d-31 Cl (xd-5) d-32 CH3 (xd-5 11 323613 〇d-33 H (xd-6) d-34 Cl (xd-6) V^o-xd-c4f9 d-35 ch3 (xd-6) Rd d-36 H (xd-7) d- 37 Cl (xd-7) d-38 CH3 (xd-7) d-39 H (xd-8) d-40 Cl (xd-8) d-41 CH3 (xd-8) d-42 H (xd- 9) d-43 Cl (xd-9) d-44 ch3 (xd-9) d-45 H (xd-10) d-46 Cl (xd-10) d-47 CH3 (xd-10) 201229670 [Table 1-2] [Table 2-1] Compound Rd xd o d-48 H C2H4 d-49 F CeH4 d-50 Cl CiH4 R d-51 Br C2H4 d-52 I C2H4 d- 53 CFi C2H4 d-54 CHa C2H4 d-55 CN C2H4 d-56 c crystal C2H4 d-57 CH2-C6H5 C2H4 d-58 H single button d-59 F single button d-60 Cl single button d-61 Br single button D-62 I single bond d-63 cf3 single bond 12 323613 201229670 [Table 2-2] ο II d-64 CHa single key Xd C6F13 d-65 H (xd-1) d-66 Cl (xd-1) R D-67 CHa (xd-1) d-68 H (xd-2) d-69 Cl (xd-2) d-70 CHs (xd-2) d-71 H Cxd-3) d-72 Cl (xd -3) d-73 CHa (xd-3) d-74 H (xd-4) d-75 Cl (xd-4) d-76 CHa (xd-4) d-77 H (xd-5) d- 78 Cl (xd-5) d-79 CHa (xd-5) d-80 H (xd-6) d-81 Cl (xd-6) d-82 CHa (xd-6) d-83 H (xd- 7) d-84 Cl (xd-7) d-85 CH3 (xd-7) d-86 H (xd-8) d-87 Cl (xd-8) d-88 CHs (xd-8) d-89 H (xd-9) d-90 Cl (xd-9) d-91 ch3 (xd-9) d-92 H (xd-10) d-93 Cl (xd-10) d-94 CHa (xd-10 13 323613 201229670 The fluorine-based liquid repellent (B) is preferably a resin containing a structural unit derived from the unsaturated compound (d) and a structural unit derived from the unsaturated compound (a) described later, and more preferably contains a source. Structural unit derived from unsaturated compound (d) The structural unit derived from the unsaturated compound (a) and the resin derived from the structural unit of the unsaturated compound (b) described later. The fluorine-based liquid repellent (B) contains a structural unit derived from the unsaturated compound (a), and is excellent in developability, so that it tends to suppress unevenness due to residue or development. The fluorine-based liquid repellent (B) contains a structural unit derived from the unsaturated compound (b), and has a tendency to be excellent in solvent property. Further, the fluorine-based liquid repellent (B) may contain a structural unit derived from the unsaturated compound (c) described later. When the I-based liquid repellent (B) is a copolymer of the unsaturated compound (a) and the unsaturated compound (d), the ratio derived from the structural unit of each monomer is relative to the fluorine-containing liquid-repellent (B) The total of the structural units is preferably in the following range. The structural unit derived from the unsaturated compound (a): 5 to 40% by weight (more preferably 10 to 30% by weight/〇). The structural unit derived from the unsaturated compound (d): 60 to 95% by weight (more) 70 to 90% by weight) The gas-based liquid repellent (B) is a copolymer of the unsaturated compound (a), the unsaturated compound (b) and the unsaturated compound (d), and is derived from the structure of each monomer. The ratio of the unit is preferably in the following range with respect to the total number of moles of the structural unit constituting the fluorine-based liquid repellent (B). Structural unit derived from unsaturated compound (a): 5 to 40% by weight (more preferably 10 to 30% by weight) Structural unit derived from unsaturated compound (b): 5 to 80% by weight (more 14 323613) 201229670 Excellent system 10 to 70% by weight) Structural unit derived from unsaturated compound (d): 10 to 80% by weight, (more preferably 20 to 70% by weight/〇) IL-based liquid repellent (B) is not When the copolymer of the compound (a), the unsaturated compound (b), the unsaturated compound (c), and the unsaturated compound (d) is a copolymer, the ratio of the structural unit derived from each monomer is relative to the fluorine-containing liquid The total number of moles of the structural unit of the agent (B) is preferably in the following range. The structural unit derived from the unsaturated compound (a): 5 to 40% by weight (more preferably 10 to 30% by weight/〇) The structural unit derived from the unsaturated compound (b): 5 to 80% by weight (more 10 to 70% by weight of the structural unit derived from the unsaturated compound (c): 10 to 50% by weight (more preferably 20 to 40% by weight/〇) derived from the structural unit of the unsaturated compound (d) 10 to 80% by weight (more preferably 20 to 70% by weight) When the ratio of each structural unit is in the above range, the liquid repellency and the development property tend to be excellent. The weight average molecular weight of the fluorine-based liquid repellent (B) converted to polystyrene is preferably from 3,000 to 20,000, more preferably from 5,000 to 15,000. When the weight average molecular weight of the fluorine-based liquid repellent (B) is in the above range, the coating property tends to be excellent, and it is difficult to cause a film thickness reduction in the exposed portion during development, and further, it is easy to remove the non-exposure portion by development. . The acid value of the fluorine-based liquid repellent (B) is 20 to 200 mgKOH/g, preferably 40 to 150 mgKOH/g. 15 323613 201229670 The content of the fluorine-based liquid repellent (B) in the photosensitive resin composition is preferably 〇·001 when the total weight of the alkali-soluble resin (A) and the crosslinking agent (C) is 1 part by weight. To 10 parts by weight, more preferably 0.1 to 5 parts by weight. When the content of the fluorine-based liquid repellent (B) is within the above range, the pattern formation property is excellent at the time of pattern formation, and the liquid-repellency of the obtained pattern (top surface) tends to be excellent. The unsaturated compound (a) is an unsaturated compound selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic anhydrides. The unsaturated compound (a) may, for example, be an unsaturated monocarboxylic acid such as acrylic acid, methacrylic acid, crotonic acid, o-vinylbenzoic acid, m-vinylbenzoic acid or p-vinylbenzoic acid; maleic acid or fumaric acid; , citraconic acid, mesaconic acid, itaconic acid, 3_vinyl phthalic acid, 4-vinyl decanoic acid, 3,4,5,6-tetrahydrofurfuric acid, tetrahydrofurfuric acid, diterpene An unsaturated dicarboxylic acid such as tetrahydrofurfuric acid, hydrazine or 4_cyclohexene dicarboxylic acid; mercapto-5-norbornene-2,3-dicarboxylic acid, 5-carboxybicyclo[2. 2·1] Hept-2-ene, 5,6-dicarboxybicyclo[2.2.1]hept-2-ene, 5-carboxy-5-methylbicyclo[2.2.1]hept-2-ene, 5-carboxy- 5-ethylbicyclo[2.2.1]hept-2-, 5-methoxy-6-methylbicyclo[2.21]hept-2-ene, 5-carboxyl-6-ethylbicyclo[2. 2 1] a bicyclic unsaturated compound having a carboxyl group such as hept-2-ene; maleic anhydride, citraconic anhydride, itaconic anhydride, 3-vinylphthalic anhydride, 4-vinylphthalic anhydride, 3, 4, 5, 6 _ tetrahydrophthalic anhydride, hydrazine, 2, 3, 6_tetrahydrophthalic anhydride, dimethyl tetrahydrofuran anhydride, 5, 6-dicarboxybicyclo [2. 2. "Ging ^ yoghurt yx (nadic anhydride) (Himic anhydride)) Unsaturated bis-acid anhydride; bis-poic acid mono [2-(methyl) propylene methoxyethyl] ester, citric acid mono 16 323613 201229670 [2-(indenyl) propylene oxiranyl ethyl ester] The above unsaturated poly((indenyl) propylene oxyalkyl] ester of a polyvalent carboxylic acid; for example, it is such that (hydroxy hydroxy) acrylate contains a thiol group and a thiol group in the same molecule. Among them, acrylic acid, methacrylic acid, maleic anhydride, etc. are preferably used from the viewpoint of copolymerization reactivity or solubility. In the present specification, "(曱基)" "Binge Gman" means at least one selected from the group consisting of acrylic acid and methacrylic acid. The expressions "(meth)acrylonitrile" and "(mercapto) oleic acid vinegar" also have the same meaning. Unsaturated & (b) is a group of cyclic ethers having 2 to 4 carbon atoms (for example, an ethylene epoxide ring, a propylene propylene ring, and a tetrahydro sulphide ring). The at least one kind of unsaturated compound is preferably a monomer having a ring of carbon = 2 = 4 and a ethylenically unsaturated double bond, more preferably, an ether having a slave atom number of 2 to 4 and The sulfhydryl group (6) may be a compound (10) having a Weim early body (hereinafter referred to as "unsaturated compound (=================================================================== (10)"), which has a w-based group = unsaturation, sometimes referred to as "unsaturated compound (M)") (b3) (The following unsaturated compound (bl) may, for example, have a structurally unsaturated compound (bidkn 1 is cyclized (bl-Ι)"), and when the cyclic olefin is subjected to p, it is called "uninterrupted compound (9), and the following may be called "not enough; no, and the compound is unsaturated." ) _ Oxygen followed by ("methyl) (10) 323613 17 201229670 Structure and fat composition preservation stability: different monomers, photosensitive tree base rσ (8) '1) For example, (? base) propylene glycidol, ethyl acetophenate point - methyl glycidyl vinegar, (meth) benzoic acid benzoquinone ^, glycidyl red olefin, o-vinyl - B Check the soil "Gan" from the base, between the ''Ethyl-based methyl glycidol fine, the opposite If / base age glycerin fine, " base-(four) county benzylic oil base (four), am vinyl armor Glycidyl fine, heart methyl ethenyl benzyl glycidyl ether, 2,3 bis (glycidyloxymethyl) styrene, 2, 4 - bis (glycidyloxy oxime) Styrene, 2' 5-bis(glycidyloxyfluorenyl) stupid ethylene, 2,6-bis(glycidyloxymethyl)styrene, 2, 3, 4-glycol (glycidol) Methoxymethyl) stupid ethylene, 2, 3, 5-glycol (glycidyloxyindenyl) styrene, 2, 3,6-glycol (glycidyloxyfluorenyl) styrene, 3, 4 5 - ginseng (glycidyloxyindenyl) styrene, 2, 4, 6-glycol (glycidyloxyindenyl) styrene, and the compound described in JP-A-H07-248625. The saturated compound (M-2) can be, for example, a vinyl group. Hexene monooxide ' 1,2-epoxy-4-vinylcyclohexene (for example, Celloxide 2000; !^1 (manufactured by Chemical Industry Co., Ltd.), 3,4-epoxycyclohexyl acrylate) Methyl ester (for example, Cyclomer A400; manufactured by Daicel Chemical Industry Co., Ltd.), decyl-acrylic acid 3, 4-epoxycyclohexyl methyl vinegar (for example, Cyclomer M100; Daicei Chemical Industry Co., Ltd.), a compound represented by the formula (II), etc. 323613 18 201229670 ^Χχΐτχ (I) (Π) 鸯 In the formula (I) and the formula (II), R1 and r2 each independently represent a hydrogen atom Or a group having 1 to 4 carbon atoms, which may be substituted by a radical. X1 and X2 independently represent a single bond, _R3_, *_R3_〇_, *_r3~S_, and wood-R3-NH-, respectively. R3 represents an alkanediyl group having 1 to 6 carbon atoms. * indicates a bond with 0. The alkyl group having 1 to 4 carbon atoms represented by R1 and R2 may, for example, be a methyl group, an ethyl group, a n-propyl group, an isopropyl group, an n-butyl group, a second butyl group or a third butyl group. The alkyl group having a carbon number of 丨 to 4 substituted by a hydroxy group may, for example, be a hydroxymethyl group, a 1-transethyl group, a 2-ethylideneethyl group, a fluorenylpropyl group, a 2-propylidenepropyl group or a 3-hydroxy group. Propyl, hydroxy-hydrazine-methylethyl, 2-hydroxy-indole-methylethyl, 1-butylidene, 2-butylbutyl, 3-hydrylbutyl, 4-butylbutyl Wait. R and R2 are preferably, for example, a hydrogen atom, a methyl group, a hydroxymethyl group or a hydroxyethyl group: 2-hydroxyethyl group, and more preferably, for example, a hydrogen atom or a methyl group. r may not be burned - the base 'e.g., methylene, ethyl, propyl m diyl, propane - 1,3-diyl, butane 夂 4 - diyl, pentane], 5 - diyl, It has been burned-1,6-diyl and the like. X and X2 are preferably, for example, a single bond, a methylene group, or an ethylidene H 0 group*CH2CH2 0- group, and more preferably, for example, a single bond hCH2_〇_ 323613 19 201229670, wherein * represents The bond represented by the formula (I) may, for example, be a compound represented by the formula (M) to the formula (115). Preferably, for example, the formula (1-1), the formula Π-3), the formula (1-5), the formula (1-7), the formula (1-9), and the formula (b (1) to the formula (1-15)) More preferably, for example, the formula (Bu 1), the formula (1-7), the formula (1-9), and the formula (1-15). 〇/ 〇ο h2c=ch-co Η2〇=ΟΗ—C— O-CH2
HjC: o H2〇=CHi-ci^-0—C2H4— ch3〇 ^^α-7) CH3〇 H2C=C—C—(HjC: o H2〇=CHi-ci^-0—C2H4— ch3〇 ^^α-7) CH3〇 H2C=C—C—(
Η2〇=ΟΗ —C—0 —〇2^4' o II · -C—0-O2H4—NΗ2〇=ΟΗ—C—0 —〇2^4' o II · -C—0-O2H4—N
h2c η ,=C—C—Ο—CH:,H2c η ,=C—C—Ο—CH:,
H2C CH30 CHaO H2C —C —G' α-9) —〇2Η4H2C CH30 CHaO H2C —C —G' α-9) —〇2Η4
(Ml) :-〇-C2H4-S 0-6)(Ml) :-〇-C2H4-S 0-6)
(M2) (1-13) C2H4QH0(M2) (1-13) C2H4QH0
(1-14) 以式(π)所示之化合物,可舉例如以式(ΙΙ_υ至式 (11-15)所示之化合物等。較佳可舉例如式(11_1;)、式 (ΙΙ-3)、式(ΙΙ-5)、式(ΙΙ-7)、式(I卜9)、式⑴_η)至式 (11-15)。 更佳係可舉例如式(Π-1)、式(1丨_7)、式(π_9)、式 (11-15) 〇 323613 20 201229670(1-14) The compound represented by the formula (π) may, for example, be a compound represented by the formula (ΙΙ_υ to the formula (11-15), etc., preferably, for example, the formula (11_1;), the formula (ΙΙ- 3), Formula (ΙΙ-5), Formula (ΙΙ-7), Formula (IBu 9), Formula (1)_η) to Formula (11-15). More preferably, for example, the formula (Π-1), the formula (1丨_7), the formula (π_9), and the formula (11-15) 〇 323613 20 201229670
以式(I)所示之化合物及以式(II)所示之化合物可分 別單獨使用。又,其等亦可以任意的比率混合而使用。混 合以式(I)所示之化合物及以式(II)所示之化合物時,其等 係以式(I):式(II)之莫耳比,宜為5 : 95至95 : 5,更宜 為10 : 90至90 : 10,尤宜為以20 : 80至80 : 20混合。 不飽和化合物(b2)宜為具有環氧丙烷基與(甲基)丙烯 醯氧基之單體。不飽和化合物(b2)可舉例如3-甲基一 3-(甲 基)丙婦醯氧基甲基環氧丙烧、3__乙基_3_(甲基)丙婦酿氧 基甲基環氧丙烧、3-甲基+(曱基)丙烯醯氧基乙基環氧丙 烷、3-乙基-3-(甲基)丙烯醯氧基乙基環氧丙烷等。 不飽和化合物⑽宜為具有四氫吱喃基與(曱基)内婦 323613 21 201229670 醯氧基之單體。 不飽和化合物(b3)可舉例如丙烯酸四氫咬喃曱基酯 (例如Biscoat V #150,大阪有機化學工業(股)製)、甲基 丙烯酸四氫呋喃曱酯等。 不飽和化合物(c)可舉例如(曱基)丙烯酸酯類、N_取代 馬來醯亞胺類、不飽和二缓酸二酯類、脂環式不飽和化合 物類、苯乙烯類、其他之乙烯化合物等。 (甲基)丙烯酸酯類可舉例如(曱基)丙烯酸甲基醋、(曱 基)丙稀酸乙基醋、(曱基)丙稀酸正丁基酯、(曱基)丙烯酸 第二丁基酯、(甲基)丙烯酸第三丁基酯等烷基酯類; (曱基)丙稀酸環己基醋、(曱基)丙烯酸2-曱基環己基 酯、(曱基)丙烯酸三環[5· 2. 1. 02’6]癸烷-8-基酯(在該技術 領域中’慣用名稱為(甲基)丙烯酸二環戊基醋 (dicyclopentanyl (meth)acrylate)、(曱基)丙稀酸二環 戊基氧基乙基酯、(曱基)丙烯酸異冰片基酯等環烷酯類; (曱基)丙烯酸2-羥基乙基酯、(曱基)丙烯酸2-羥基丙 基酯等羥基烷酯類; (甲基)丙烯酸苯基酯、(曱基)丙烯酸苯甲基酯等芳基 及芳烷基酯類。 不飽和二羧酸二酯類可舉例如馬來酸二乙酯、富馬酸 二乙酯、伊康酸二乙酯等。 N-取代馬來醯亞胺類可舉例如N-苯基馬來醯亞胺、N_ 環己基馬來酿亞胺、N-苯甲基馬來醢亞胺、號雖醯亞胺 基-3-馬來醯亞胺笨曱酸酯、N-琥珀醯亞胺基-4-馬來醯亞 323613 22 201229670 胺丁酸酯、N-琥珀醯亞胺基-6-馬來醯亞胺己酸酯、N-琥珀 醯亞胺基-3-馬來醯亞胺丙酸酯、N-(9-吖啶基)馬來醯亞胺 . 等。 , 脂環式不飽和化合物類可舉例如雙環[2. 2. 1 ]庚-2 - 烯、5-甲基雙環[2.2. 1]庚-2-烯、5-乙基雙環[2.2. 1]庚-2-烯、5-羥基雙環[2.2. 1]庚-2-烯、5-羥基曱基雙環[2· 2. 1] 庚-2-烯、5-(2’ -羥基乙基)雙環[2. 2_ 1]庚-2-烯、5-甲氧 基雙環[2. 2. 1]庚-2-烯、5-乙氧基雙環[2. 2. 1]庚-2-烯、 5, 6-二羥基雙環[2. 2.1]庚-2-烯、5, 6-二(羥基曱基)雙環 [2. 2· 1]庚-2-烯、5, 6-二(2’ -羥基乙基)雙環[2. 2. 1]庚-2-烯、5, 6-二曱氧基雙環[2. 2. 1]庚-2-烯、5, 6-二乙氧基雙 環[2. 2. 1]庚-2-烯、5-羥基-5-曱基雙環[2. 2. 1]庚-2-烯、 5-羥基-5-乙基雙環[2·2. 1]庚-2-烯、5-羥基甲基-5-曱基 雙環[2· 2. 1]庚-2-烯、5-第三丁氧基羰基雙環[2· 2. 1]庚 -2-稀、5-環己基氧基羰基雙環[2. 2. 1]庚-2-烯、5-苯氧基 羰基雙環[2. 2. 1]庚-2-烯、5, 6-雙(第三丁氧基羰基)雙環 [2· 2. 1]庚-2-烯、5, 6-雙(環己基氧基羰基)雙環[2· 2· 1] 庚-2-烯等雙環不飽和化合物類等。 苯乙烯類可舉例如苯乙烯、α-甲基苯乙烯、間甲基苯 乙烯、對曱基苯乙烯、乙烯基曱苯、對曱氧基苯乙烯等。 其他之乙烯基化合物可舉例如(甲基)丙烯腈、氣乙烯、 偏乳乙婦、(甲基)丙烯酿胺、乙酸乙婦g旨、1,3-丁二婦、 異戊二烯、2, 3-二曱基-1,3-丁二烯等。 從共聚合反應性及鹼溶解性之觀點來看,不飽和化合 323613 23 201229670 物(c)宜為例如苯乙烯、N-笨基馬來醯亞胺、N-環己基馬來 醯亞胺、N-苯曱基馬來醯亞胺、雙環[2.2. 1]庚-2-烯等。 〈鹼可溶性樹脂(A)〉 本發明之感光性樹脂組成物係含有鹼可溶性樹脂 (A)。鹼可溶性樹脂(A)只要為塗膜性良好,具有與其他成 分之相溶性者即可。 使本發明之感光性樹脂組成物中的鹼可溶性樹脂 (A)、交聯劑(〇及酸產生劑(D)之合計為1〇〇重量%時的鹼 可溶性樹脂(A)之含量宜為60至98重量%。鹼可溶性樹脂 (A)之含量若在前述範圍中,有感光性樹脂組成物之顯像 性、所得到之圖案的密著性、耐溶劑性及機械特性變良好 的傾向。 必須於有機EL裝置之構造上例如透明電極(〖το(摻雜 錫之氧化銦)、IZO(摻雜辞之氧化銦:簡稱IZ〇))上圖案形 成感光性樹脂組成物。 透明電極與感光性樹脂組成物密著性佳,故即使使用 鹼可溶性樹脂,有時形成圖案構造物後,於圖案構造物以 外之部分例如於圖案構造物之開口部的周緣部感光性樹月旨 系且成物的殘邊:會殘留。 使含有有機EL材料之印墨以噴墨法等塗佈於圖案構 造物之開口部内時,殘留於此開口部周緣部之樹脂殘 成印墨斥開。此「斥開(DeWetting)」輕微時發光層等之棋 厚產生不均。例如發光層之膜厚與開σ部之中央部比較之 下周緣部處較薄。因此,發光層之周緣部的電隊與中央部 323613 24 201229670 比車乂之下較低’對發光層施加電壓時電流集中流動於周緣 部’中央部相較於周緣部較暗。如此地,若膜厚產生不均, 會產生認為起因於膜厚差之發光不均。尤其「斥開 (Dewetting)」明顯時,於開口部之周緣部不形成發光層 等,而直接於此發光層上形成電極時,於一對電極間產生 電流漏’電流不在形成於像素内之發光層流動,而產生 不發光之現像。 本發明人經專心研究之結果,為解決上述課題,發現 鹼可溶性樹脂(A)宜使用乙烯基酚樹脂(以下,有時稱為「聚 乙烯基酚」)或酚醛清漆樹脂。尤其,發現藉由併用聚乙烯 基酚與酚醛清漆樹脂,發現可確保圖案形成感光性樹脂組 成物之圖案構造物與基板(或電極)之密著性,同時除了圖 案構造物之區域實質上無殘渣(殘渣不易殘留),顯著改善 耐熱溫度。 聚乙烯酚可舉例如乙烯基酚的同元聚合物、乙烯基酚 與可與此共聚合之單體的共聚物等。 聚乙烯基酚可藉由將4-乙烯基酚、3-乙烯基酚、2-乙 烯基酚、2-曱基-4-乙烯基酚、2, 6-二曱基-4-乙烯基酚等 乙烯基酚單獨或組合2種以上,使用偶氮雙異丁腈、苯曱 酿基過氧化物專聚合起始劑,進行自由基聚合而得到。 有關乙烯基酚類及聚乙烯基酚類係詳細記載於丸善石 油化學(股)研究所編“乙烯基酚基礎與應用,’(教育出版 中心發行)。可與乙烯基酚共聚合之單體,可舉例如異丙烯 基酚、丙烯酸、甲基丙烯酸、笨乙烯、馬來酸酐、馬來醯 25 323613 201229670 亞胺、乙酸乙稀酯等。4卜笙夕士 t 匕等之中,宜為乙烯基酚之單獨聚 合物,尤宜為對-乙烯基酚之單獨聚合物。 聚乙烯基狀平均分子㈣H凝膠滲透層析(GPC)所 測定之換算鮮分散聚苯乙烯的重量平均分子量㈤,一 般為3000至20000,宜為4000至15〇〇〇,更宜為5〇〇〇至 10000。若聚乙縣紛之重量平均分子量太低,即使引起曝 光區域之交聯反應,分子量亦不會充分增大,故易溶解於 驗顯像液,X,耐難之提昇縣降低。絲〔烯基紛之 重量平均分子量太大,曝光區域與未曝舰域躲顯像液 之溶解度的差變小’故很難得到良好的光阻圖案。 練清漆樹脂亦可使用在光阻之技術領域中廣泛使用 者。雜清軸脂係可#由例如使_與_細類在酸 性觸媒(例如草酸)的存在下反應來得到。 盼類可舉例如紛、鄰甲紛、間甲盼、對甲鹼、2,3~二 甲基酚、2, 5-二甲基酚、3, 4_二甲基酚、3,5一二甲基酚、 2」4-二曱基酚、2, 6_二曱基酚、2, 3, 5一三曱基酚、2, 3, 6一 三曱基紛、2-第三丁基盼、3_第三丁基盼、卜第三丁基紛、 2'甲基間苯:酚、4-甲基間苯二酚、5-曱基間苯二酚、4-第三丁基兒祕、2_甲氧基盼、3-甲氧基紛、2-丙基紛、 3丙基盼、4-丙基紛、2-異丙基紛、2_甲氧基_5_曱基紛、 第三丁基+甲基盼、麝香草紛(thymQl)、異麝香草紛 等。此等可分別單獨’或亦可組合2種以上而使用。 醛類可舉例如甲醛、福馬林、多聚甲醛、三卩萼烷 ―、乙醛、丙醛、苯甲醛、苯基乙醛、α _苯基丙 323613 26 201229670 醛、/9-苯基丙醛、鄰-羥基苯甲醛、間-羥基苯甲醛、對一 羥基苯曱醛、鄰-氯苯曱醛、間-氣笨曱醛、對_氯苯曱醛、 鄰-甲基苯曱醛、間-甲基苯曱醛、對—甲基苯曱醛、對—乙 基苯曱路、對-正丁基苯甲酸、對_等。酮類可舉例如丙 _、甲基乙基酮、二乙基酮、二苯基酮等。此等係可分別 單獨,或亦可組合2種以上而使用。 上述之中,從光阻之感度控制性的觀點來看尤佳係併 用間曱紛與對甲酴,使此等與甲盤、福馬林或多聚甲搭進 行縮合反應之酚醛清漆樹脂。間甲酚與對甲酚之饋入重量 比(間曱酚:對曱酚)一般為80 : 20至20 : 8〇,宜貝為7〇里 30至50:50。進一步,亦宜使用3, 5_二曱基酚(亦即,3 5_ 二曱酚)。此時,甲酚類(間甲酚與對甲酚的合計量)與一 二甲盼之饋入重量比(曱盼類:3,5_二?盼)一般為5〇:’5〇 至別:20,宜為60·· 40至70: 30。贿清漆樹脂之平均 分子量係藉GPC所測定之換算成單分散聚苯乙埽的重量平 均分子量(Mw),一般為1〇〇〇至10000,宜為2〇〇〇至7〇〇〇, 更且為2500至6000。若酚醛清漆樹脂之重量平均分子量 太低,即使引起曝光部之交聯反應,分子量增大效=小1 故易溶解於鹼顯像液。 @若祕清料m之重量平均好量太高,曝 曝光部對驗顯像液之溶解度的差變小,故很難得到良= 光阻圖案。聚乙烯麵及祕清賴脂之重量 旦 藉由調整合成條件,可控制於所希望的範圍中。乂 ^ 如藉由⑴粉碎藉合成所得狀樹脂,以具有適當^解^ 323613 27 201229670 溶劑進行固―液萃取之方法、⑵使藉合成所得到之 樹月曰浴解於良溶劑中,滴人於弱溶射,或滴入弱溶劑, 而進行固液或液〜液萃取之方法等,可控制重量平均分子 量。 、GPC所彳于到之重量平均分子量的測定係使用 (J0S0公司製)作為Gpc測定裝置,以如下之條件實施。 管柱:T〇S〇 公司製 TSKGEL G3000HXL 與 G200HXL1000 各 1 根的組合 溫度:38°C 溶劑:四氫呋喃 流速:1. Oml/分 5式料·注入濃度〇. 05至0. 6重量%之試料〇. imi 聚乙烯基酶與酚醛清漆樹脂之使用比率係就聚乙烯基 盼·紛搭清漆樹脂之重量比,—般為3〇 : 7〇至95 : 5,宜 為35 : 65至95 : 5,更宜為40 : 60至90 : 10之範圍。 聚乙稀基盼之比率愈大,光阻圖案之耐熱性愈良好, 但易從基板剝離。若酚醛清漆樹脂之比率變大,可解決光 阻圖案從基板剝離之問題,但耐熱性降低。因此,藉由兩 者之比率在前述範圍内’耐熱性與耐剝離性之均衡變良好。 〈酸產生劑(D)〉 酸產生劑(D)係可例示藉活性光線而產生酸之化合 物、藉熱產生酸之化合物。 藉活性光線而產生酸之化合物若係藉活性化輻射線而 曝光’只要為產生布忍斯特酸(Bronstedacid)或路易士酸 28 323613 201229670 之物質即可,無特別限制,可使用鏽鹽、鹵化有機化合物、 醌二疊氮化合物、α,α’-雙(磺醯基)重氮曱烷系化合物、 α-羰基-α 磺醯基重氮甲烷系化合物、砜化合物、有機 酸酯化合物、有機酸醯胺化合物、有機酸醯亞胺化合物等 公知者。此等之中,宜為芳香族磺酸酯類、芳香族碘鑌鹽、 芳香族硫鏽鹽、具有鹵化烷基殘基之芳香族化合物等。此 等之酸產生劑(D)係宜依照使圖案曝光之光源的波長,而從 分光感度之方面選擇。 鏽鹽可舉例如重氮鏽鹽、銨鹽,二苯基碘鏽三氟曱磺 酸酯等碘鑌鹽,三苯基硫鏽三氟曱磺酸酯等硫鏽,鱗鹽、 砷鏽鹽、氧鏽鹽等。 鹵化有機化合物可舉例如含有鹵素之噚二唑系化合 物、含有函素之三畊系化合物、含有鹵素之乙醯苯系化合 物、含有鹵素之二苯甲酮系化合物、含有鹵素之亞砜系化 合物、含有函素之礙系化合物、含有鹵素之°塞唾、含有鹵 素之嗜〇坐、含有鹵素之三0坐、含有鹵素之2-0辰喃酮(pyrone) 系化合物、其他之含有鹵素的雜環狀化合物、含有鹵素之 脂肪族烴化合物、含有鹵素之芳香族烴化合物、鹵化硫基 化合物等。 鹵化有機化合物之具體例可舉例如三(2, 3-二溴丙基) 磷酸酯、三(2, 3-二溴-3-氯丙基)磷酸酯、四溴氯丁烷、2-[2-(3,4-二曱氧基苯基)乙烯基]-4, 6-雙(三氯τ曱基)_S-三口井、六氯苯、六溴苯、六溴環十二烧、六溴環十二碳烯、 六溴聯苯基、烯丙基三溴苯基醚、四氯雙酚A、四溴雙酚A、 29 323613 201229670 四氯雙酚A之雙(氣乙基)醚、四溴雙酚A之雙(溴乙基)醚、 雙酚A之雙(2, 3-二氣丙基)醚、雙酚A之雙(2, 3_二溴丙某) 醚、四氯雙酚A之雙(2, 3-二氣丙基)醚、.四溴雙酚八之土雙 (2, 3-二溴丙基)醚、四氯雙酚s、四溴雙酚3、四氣雙酚$ 之雙(氯乙基)醚、四溴雙酚s之雙(溴乙基)醚、雙酚s之 雙(2, 3-二氣丙基)醚、雙酚s之雙(2,3_二溴丙基)醚、三 (2,3_二溴丙基)三聚異氰酸酯、2,2-雙(4-羥基-3,5__二溴 苯基)丙烷、2, 2-雙(4-(2-羥基乙氧基)-3, 5-二溴苯基)丙 烷等鹵系耐燃劑;二氣二苯基三氯乙烷、五氯酚、2,H 二氣苯基、4-硝基苯基醚、2, 4-二氣苯基、3, _曱氧基一4, _ 石肖基苯基喊、2, 4-二氯苯氧基乙酸、4, 5, 6, 7-四氣酜内酿 (4’5’6’7-tetrachlorop hthalide)、1,1-雙(4-氣苯基) 乙醇、1,1-雙(4-氣苯基)—2, 2, 2-三氣乙醇、2, 4, 4,,5-四 氯二苯基硫醚、2, 4, 4,,5-四氯二苯基砜等有機氯系農藥 等。 〃 醌二疊氮化合物之具體例可舉例如丨,2_苯醌二疊氮 4磺酸酯、1,2-萘醌二疊氮-4-磺酸酯、1,2-萘醌二疊氮 ~5一磺醆酯、2,卜萘醌二疊氮-4-磺酸酯、2, 1-苯醌二疊氮 -5-確酸g旨之醌二疊氮衍生物的磺酸酯;丨,2—苯醌_2_二疊 氮一4-磺醯氣、丨,2-萘醌-2-二疊氮-4-磺酿氣、1,2-萘醌-2-二疊氮―5-磺醯氯、1,2-萘醌-1-二疊氮-6-磺醢氣、1,2-笨職-1-二疊氮〜5_磺醯氣等醌二疊氮衍生物的磺醯氣等。 α,α 雙(磺醯基)重氮曱烷系化合物的具體例可舉 例如具有未取代、對稱性或非對稱性經取代之烷基、烯基、 30 323613 201229670 芳香族基、或雜環狀基的 A —代對稱性或非對稱性經取代之烷基、烯基、 氮ΐΐ等t香族基、或雜環狀基的續酿基重 :合物的具體例可舉例如具有未取代、對稱 „取代之烧基、婦基、芳烧基、芳香族基、或雜』 狀基的砜化合物、二砜化合物等。 〃展 々有機酸酯之具體例可舉例如羧酸酯、磺酸酯、磷峻酽 等,有機酸醯胺可舉例如羧醯胺、磺醯胺、磷醯胺等,§曰 機酸醯亞胺可舉例如羧醯亞胺、磺醯亞胺、磷醯亞胺等有 此外,酸產生劑(D)可舉例如環己基甲基(2—侧氣義戸 己基)硫鏽三氟曱烷磺酸鹽、二環己基(2-側氧基環已義 1 硫鑷三氟曱烷磺酸鹽、2-侧氧基環己基(2-降冰片基) 三氟甲烷磺酸鹽、2-環己基磺醯基環己酮、二甲基(2〜侧二 基環己基)硫鑌三氟甲烷磺酸鹽、三苯基硫鏽三氟甲境@ & 鹽、二苯基蛾錯三氟曱烧續酸鹽、N-經基琥珀酼亞胺=& 甲烷磺酸酯、對-曱苯磺酸苯基酯等。 酸產生劑(D)相對於鹼可溶性樹脂(A) 1〇〇重量份,_ 般以0. 1至10重量份、宜為0· 3至8重量份、更宜為^ 〇· 5至5重量份之比率使用。S曼產生劑(D)之比率若太小戈 太大,有光阻圖案之形狀劣化之虞。 _ <交聯劑(C)> 31 323613 201229670 交聯劑(c)係藉活性光線的照射(曝光)所產生的酸之 存在下,可使鹼可溶性樹脂交聯的化合物(感酸物質)。如 此之交聯劑係可舉例如烷氧基甲基化脲樹脂、烷氧基甲基 化三聚氰胺樹脂、烷氧基曱基化糖醛酸樹脂、烷氧基甲基 化甘醇脲樹脂、烷氧基甲基化胺基樹脂等周知的酸交聯性 化合物。其他,可舉例如烷基醚化三聚氰胺樹脂、苯並胍 胺樹脂、烷基醚化苯並胍胺樹脂、脲樹脂、烷基醚化脲樹 月曰、胺曱酉文Sa _曱盤樹脂、可溶朌盤(res〇 1 e )型酴曱路樹 脂、烷基醚化可溶酚醛型酚甲醛樹脂、環氧樹脂等。 此等之中’宜為烷氧基甲基化胺基樹脂,其具體例可 舉例如曱氧基曱基化胺基樹脂、乙氧基甲基化胺基樹脂、 正丙氧基曱基化胺基樹脂、正丁氧基甲基化胺基樹脂等。 此等之中’以解析度為良好之觀點,尤宜為六甲氧基三聚 氰胺等之曱氧基甲基化胺基樹脂。烷氧基曱基化胺基樹脂 之市售品可舉例如 PL-1170、PL-1174、UFR65、CYMEL 300、 CYMEL 303(以上’三井 Cytec 公司製),Βχ_4〇〇〇、NikaUc MW 30、MX 290(以上’三和chemical公司製)等。 此等之父聯劑可分別單獨,或組合2種以上而使用。 交聯劑(C)相對於鹼可溶性樹脂(A) 100重量份,一般以〇. 5 至60重量份、宜為以1至50重量份、更宜為以2至40重 1伤之比率使用。若交聯劑之使用量太小,交聯反應很難 充分進行’使用鹼顯像液之顯像後的光阻圖案之殘膜率降 低’易產生光阻圖案之膨潤或蛇行等變形。若交聯劑之使 用罝太多,有解析度降低之虞。 32 323613 201229670 * 本發明之感光性樹脂組成物可含有溶劑(E)。 在本發明中可使用的溶劑係可從例如酯溶劑(含有 - -coo-之溶劑)、酯溶劑以外之醚溶劑(含有_〇_之溶劑)、醚 v 酯溶劑(含有_C00-與-〇-之溶劑)、g旨溶劑以外之酮溶劑(含 有-C0-之溶劑)、醇溶劑、芳香族烴溶劑、醢胺溶劑、二曱 基亞砜等之中選擇而使用。 酯溶劑可舉例如乳酸曱酯、乳酸乙酯、乳酸丁醋、2_ 羥基異丁酸甲酯、乙酸乙酯、乙酸正丁酯、乙酸異丁醋、 甲酸戊酯、乙酸異戊酯、丙酸丁酯、丁酸異丙酯、丁酸乙 酯、丁酸丁酯、丙酮酸曱酯、丙酮酸乙酯、丙酮酸丙酯、 乙醯乙酸曱酯、乙醯乙酸乙酯、環己醇乙酸酯、^ _丁内酯 等。 醚溶劑可舉例如乙二醇單甲基醚、乙二醇單乙基醚、 乙二醇單丙基醚、乙二醇單丁基醚、二乙二醇單甲基醚、 二乙二醇單乙基醚、二乙二醇單丁基醚、丙二醇單甲基醚、 丙二醇單乙基醚、丙二醇單丙基醚、丙二醇單丁基醚、3_ 甲氧基-1-丁醇、3-甲氧基-3-甲基丁醇、四氫呋喃、四氫 吡喃、1,4-二噚烷、二乙二醇二甲基醚、二乙二醇二乙基 醚、二乙二醇甲基乙基醚、二乙二醇二丙基醚、二乙二醇 二丁基趟、大菌香趟、苯基乙基驗、甲基大茵香酸等。 醚酯溶劑可舉例如甲氧基乙酸甲酯、曱氧基乙酸乙 酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯、 3-甲氧基丙酸甲g旨、3-甲氧基丙酸乙醋、3_乙氧 酯、3-乙氧基丙酸乙醋、2_甲氧基丙酸甲酿、2_$氧基丙 323613 33 201229670 酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2—乙氧 基丙酸乙酯、2-曱氧基-2-甲基丙酸甲酯、2_乙氧基_2_甲 基丙酸乙酯、乙酸3-甲氧基丁基酯、乙酸3-甲基-3-甲氧 基丁基酯、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸 酯、丙二醇單丙基醚乙酸酯、乙二醇單甲基醚乙酸酯、乙 二醇單乙基醚乙酸酯、二乙二醇單乙基醚乙酸酯、二乙二 醇單丁基醚乙酸酯等。 酮溶劑可舉例如4-羥基-4-甲基-2-戊酮、丙酮、2-丁 酮、2-庚酮、3-庚s同、4-庚酮、4-曱基-2-戊酮、環戊酮、 環己酮、異佛酮等。 醇溶劑可舉例如甲醇、乙醇、丙醇、丁醇、己醇、環 己醇、乙二醇、丙二醇、甘油等。 芳香族烴溶劑可舉例如苯、甲苯、二甲苯、三甲苯等。 醯胺溶劑可舉例如N,N-二甲基甲醯胺、N,N一二甲基乙 醯胺、N-甲基比洛咬酮等。 此等之溶财翔亦可組合2種類以上而使用。 上述溶劑之中,從塗佈性、乾燥性之觀點,宜為在i atir 之彿點為12Gt:以上1啊以下的有機溶劑。其中,宜為丙 t醇單甲細、丙二醇單甲細乙酸酯、3-乙氧基丙酸乙 酉曰、一乙二醇甲基乙基醚、乙酸3-甲氧基丁基酯、3_甲氧 基1 丁醇等。若_為此等之溶劑,可抑制塗佈 均,可使塗膜之平坦性良好。 感光性樹駭成物中之溶劑⑻的含 樹脂組成物所含有的成分之合計量,宜為6〇至95重量^ 323613 34 201229670 更宜為70至90重量%。若換言之,感光性樹脂組成物之固 形份宜為5至40重量%,更宜為1〇至30重量%。若溶劑的 含量在前述的範圍中’有塗佈感光性樹脂組成物所形成之 臈的平坦性高之傾向。此處,固形份謂從感光性樹脂組成 物除去溶劑的成分。 本發明之感光性樹脂組成物中可依需要而添加吸收活 性光線之化合物(以下有時稱為「光吸收劑(H)」)。 若於感光性樹脂妞成物中含有吸收活性光線之化合 物,於曝光時,因為吸收朝光阻膜之深度方向進行之光, 而可得封於截面從順錐狀至逆錐狀或外突(overhang)狀之 光阻圖案。又’即使藉由基板或形成於基板上之ΙΤ0膜等 進行曝光的光反射,光阻圖案之形狀係受到影響。因此, 為防止曝光光的反射,必須有光吸收劑(Hh尤其,使用酸 產生劑(D)與交聯劑(C)之組合的感光性樹脂組成物係交聯 型化學增幅光阻,藉光之照射所生成之酸在光阻膜内進行 擴散,連光照不到之區域亦引起交聯反應,故藉由存在吸 收活性光線之光吸收劑(U),而可控制光阻圖案之形狀。 光吸收劑(H)係只要依照曝光光源之波長,選擇於其波 長區域具有吸收區域之化合物即可。但,光吸收劑(H)為對 於鹼顯像液溶解度低之化合物時,顯像後該光吸收劑(H) ^殘留於基板上,故宜為賦務㈣基或絲、續醯基等 酉文性殘基’以提高對於鹼顯像液之溶解度的化合物。又, 以解決如此之殘渣產生之問題的目的,宜選擇吸光度更高 之化δ物,可以少量添加量得到充分的吸光度。所形成之 323613 35 201229670 光阻圖案在曝光後烘烤(PEB)或濺鍍步驟曝露於高溫時,有 時光吸收劑(H)昇華而污染裝置,故光吸收劑(幻宜為昇華 性低的化合物》 本發明所使用之光吸收劑(Η )宜為所謂的偶氮染料。偶 氮染料可舉例如偶氮苯衍生物、偶氮萘衍生物、芳比洛 咬酮之偶氮苯或偶氮萘取代體、還有吡咯琳酮 (pyrazolone)、本並σ比略琳嗣、β比β坐、σ米β坐、嗟η坐等雜環 的芳基偶氮化合物等。 此等之芳基偶氮化合物為了使吸收波長設定於所希望 的區域,而可適當選擇共軛系之長度或取代基的種類等。 例如藉由經磺酸(金屬鹽)基、磺酸酯基、颯基、羧基、氮 基、(取代)芳基或烧基幾基、_素等電子吸引基取代,可 形成使吸收區域設定為短波長之芳基偶氮化合物。又,亦 可藉由經已經(取代)烧基、(取代)芳基或聚氧伸烧基等所 取代之胺基’羥基、烧氧基、或芳基氧基等電子供給基取 代,亦可形成使吸收波長設定於長波長區域之芳基偶氣化 合物。因取代基有如胺基般降低對於驗顯像液之溶解性的 基、與如羧基或羥基般提高對於鹼顯像液之溶解性的基, 故為使本發明之感光性樹脂組成物的感度成為實用性水 準,宜適當選定芳基偶氮化合物之取代基的種類。 偶氮染料藉由選擇化合物的結構或取代基之種類,可 使用在200至500nm廣波長區域吸收活性光線之各種化合 物。如此之共軛系的長度或取代基之選定,亦符合有關偶 氮染料以外之化合物。主要對應於300至400nm之波長區 36 323613 201229670 域之光源的化合物,係可舉例如使(取代)笨甲駿與具有活 性亞甲基之化合物進行縮合所得到的苯乙稀街生物。笨 ”路之取代基係可舉例如經經基、燒氧基或由原子取代之燒 ‘基胺基’聚氧伸絲胺基、㈣、㈣子、燒基、烧氧基、 烷基羰基或芳基羰基等。 具有活性亞曱基之化合物係可舉例如乙猜、氛基乙 酸酯、α-氰基酮類、丙二酸酯、乙醯乙酸酯等〗,3-二酮 類等。 ’ 又,光吸收劑(Η)亦可使用使芳基π比唾琳酮與芳基酸縮 合所得到之次甲基染料類、芳基苯並三唑類、作為胺與醛 之縮合物所得到的偶氮次甲基染料、薑黃素(Curcumin)、 氧雜葱酮(xanthone)等天然化合物等。具有芳基羥基之染 料的醌二疊氮磺酸酯化合物或雙疊氮化合物等,與吸收曝 光光同時地改變對於鹼顯像液之溶解性,或亦可使用交聯 反應之化合物而調整顯像特性。 進一步,光吸收劑(H)係可使用例如氰基乙稀基苯乙烯 系化合物、1-氰基-2-(4-二烧基胺基苯基)乙歸類、對_(鹵 素取代苯基偶氮)-二烷基胺基苯類、1-燒氧基_4_ (4’-N,N-二烷基胺基苯基偶氮)苯類、二烷基胺基化合物、 1,2-二氰基乙烯、9-氰基蔥、9-蔥基亞甲基丙二腈、N一乙 基~3-叶°坐基亞曱基丙二腈、2-(3, 3-二氰基-2~亞丙基)_3-甲基-1,3-嘆峻淋等。 市售之染料中用來作為光吸收劑(H)者,可舉例如油黃 色#101、油黃色#103、油黃色#117、油粉紅色#312、油綠 323613 37 201229670 色BG、油藍色BOS、油藍色#603、油黑色BY、油黑色此 油黑色T-505(以上Orient化學工業股份公司製),水曰紫 (C.I. 42555)、曱基紫(C.I. 42535)、玫塊紅 45170Β)、孔雀石綠(C. I. 42000)、亞甲基藍(C. L 52()ι^ 等。 前述1-氰基-2-(4-二烧基胺基苯基)乙埽類係可舉例 如1-羧基-1-氰基-2-(4-二正己基胺基苯基)乙烯、 -1-氰基-2-(4-二正丁基胺基苯基)乙烯、卜羧基〜丨〜氰^ -2-(4-二正庚基胺基苯基)乙烯等,於1位具有竣基的卜 氰基-2-(4-二烷基胺基苯基)乙烯類。 此等之1-氰基-2-(4-二烷基胺基苯基)乙烯類、油黃 色#101、油黃色#103、油黃色#107等,就逆錐狀之光阻圖 案輪廓的形成性優異之觀點來看尤佳。又,所謂逆錐形狀 意扣使感光性樹脂組成物圖案形成而成之圖案構造物的截 面形狀為隨著離開基板而變更廣之形狀。截面形成逆錐狀 或外突狀之光阻圖案時,光吸收劑⑻之使用量係可依感光 ,樹脂組成物之膜厚或光吸從劑(H)之種類等而適當決 =-般,膜厚較厚時係光很難穿透,故使用量可比較 y薄時使用比較多。光吸收劑(H)相對於驗可溶性樹脂 重夏份,-般以〇」至15重量份,宜為〇 5至1〇重 里伤尤且以1至8重量份之比率使用。截面形成順錐狀 之光阻圖案時,相較於截㈣成逆錐狀或外突狀之光阻圖 案寺光吸收劑(⑻之使用量彡,相對於驗可溶性樹脂(A) 1〇〇重I份’以未板用(〇)至未達Q. i重量份之比率使用。 323613 38 201229670 本發明之感光性樹脂組成物係亦可含有界面活性劑 (F)。界面活性劑(F)可舉例如聚矽氧系界面活性劑、氟系 . 界面活性劑、具有氟原子之聚石夕氧系界面活性劑等。但, % 界面活性劑(F)係以與氟系撥液劑(B)相異之結構的化合物 作為主成分者。 聚矽氧系界面活性劑係可舉例如具有矽氧烷鍵之界面 活性劑’可舉例如 Toray Silicone DC3PA、TorayThe compound represented by the formula (I) and the compound represented by the formula (II) can be used singly. Further, these may be used in combination at any ratio. When a compound represented by the formula (I) and a compound represented by the formula (II) are mixed, the molar ratio of the formula (I): formula (II) is preferably 5: 95 to 95: 5, More preferably 10:90 to 90:10, especially 20:80 to 80:20. The unsaturated compound (b2) is preferably a monomer having an oxypropylene group and a (meth) propylene methoxy group. The unsaturated compound (b2) may, for example, be 3-methyl-3-(methyl)propanyloxymethyl propylene propylene, 3__ethyl _3_(methyl) propyl oxymethyl ring Oxypropanone, 3-methyl+(indenyl)acryloxyethyl propylene oxide, 3-ethyl-3-(meth)acryloxyethyl propylene oxide, and the like. The unsaturated compound (10) is preferably a monomer having a tetrahydrofuranyl group and a (decyl) methoxy group 323613 21 201229670 decyloxy group. The unsaturated compound (b3) may, for example, be tetrahydrofuranyl acrylate (for example, Biscoat V #150, manufactured by Osaka Organic Chemical Industry Co., Ltd.) or tetrahydrofuranyl methacrylate. Examples of the unsaturated compound (c) include (fluorenyl) acrylates, N-substituted maleimide, unsaturated serotonic acid diesters, alicyclic unsaturated compounds, styrenes, and the like. Ethylene compound, etc. Examples of the (meth) acrylate include methyl ketone (meth) acrylate, ethyl acenoate (mercapto) acrylate, n-butyl (meth) acrylate, and butyl (decyl) acrylate. Alkyl esters such as esters and tert-butyl (meth)acrylate; (fluorenyl)cyclohexyl acrylate, 2-mercaptocyclohexyl (meth) acrylate, tricyclo(decyl) acrylate [5· 2. 1. 02'6] decane-8-yl ester (in the technical field, the customary name is dicyclopentanyl (meth)acrylate, (mercapto) Cycloalkyl esters such as dicyclopentyloxyethyl acrylate and isobornyl (mercapto) acrylate; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (decyl) acrylate a hydroxyalkyl ester such as an ester; an aryl group or an aralkyl ester such as phenyl (meth)acrylate or benzyl (meth)acrylate; and an unsaturated dicarboxylic acid diester such as maleic acid Ethyl ester, diethyl fumarate, diethyl itaconate, etc. N-substituted maleimide may, for example, be N-phenylmaleimide, N-cyclohexylmaleimide, N -benzene Kima yimide, yttrium imino-3-maleimide acetoate, N-succinimide-4-mala 323613 22 201229670 Aminobutyrate, N- Amber quinone imine-6-maleimide caproate, N-amber succinimide-3-maleimide propionate, N-(9-acridinyl)maleimide And the alicyclic unsaturated compound may, for example, be bicyclo[2.2.1]hept-2-ene, 5-methylbicyclo[2.2.1]hept-2-ene, 5-ethylbicyclo[ 2.2. 1]hept-2-ene, 5-hydroxybicyclo[2.2.1]hept-2-ene, 5-hydroxyindenylbicyclo[2·2.1]hept-2-ene, 5-(2'- Hydroxyethyl)bicyclo[2. 2-1]hept-2-ene, 5-methoxybicyclo[2.2.1]hept-2-ene, 5-ethoxybicyclo[2.2.1]g 2-ene, 5,6-dihydroxybicyclo[2.2.1]hept-2-ene, 5,6-di(hydroxyindenyl)bicyclo[2. 2·1]hept-2-ene, 5, 6 -bis(2'-hydroxyethyl)bicyclo[2.2.1]hept-2-ene, 5,6-dioxaoxybicyclo[2.2.1]hept-2-ene, 5,6- Diethoxybicyclo[2.2.1]hept-2-ene, 5-hydroxy-5-mercaptobicyclo[2.2.1]hept-2-ene, 5-hydroxy-5-ethylbicyclo[ 2·2. 1]hept-2-ene, 5-hydroxymethyl-5-fluorenylbicyclo[2 · 2. 1]hept-2-ene, 5-t-butoxycarbonylbicyclo[2·2.1]hept-2-diene, 5-cyclohexyloxycarbonylbicyclo[2.2.1]heptane- 2-ene, 5-phenoxycarbonylbicyclo[2.2.1]hept-2-ene, 5,6-bis(t-butoxycarbonyl)bicyclo[2·2.1]hept-2-ene a bicyclic unsaturated compound such as 5,6-bis(cyclohexyloxycarbonyl)bicyclo[2·2·1]hept-2-ene. Examples of the styrene include styrene, α-methylstyrene, m-methylstyrene, p-nonylstyrene, vinyl anthracene, p-nonyloxystyrene, and the like. Other vinyl compounds include, for example, (meth)acrylonitrile, ethylene ethylene, partial milk, (meth)acrylamide, acetic acid, 1,3-butadiene, isoprene, 2, 3-dimercapto-1,3-butadiene, and the like. From the viewpoint of copolymerization reactivity and alkali solubility, the unsaturated compound 323613 23 201229670 (c) is preferably, for example, styrene, N-stupyl maleimide, N-cyclohexylmaleimide, N-benzoinyl maleimine, bicyclo [2.2. 1] hept-2-ene, and the like. <Alkali-soluble resin (A)> The photosensitive resin composition of the present invention contains an alkali-soluble resin (A). The alkali-soluble resin (A) may be one having good compatibility with other components as long as it has good coating properties. The content of the alkali-soluble resin (A) when the total amount of the alkali-soluble resin (A) and the crosslinking agent (the hydrazine and the acid generator (D) in the photosensitive resin composition of the present invention is 1% by weight is preferably 60 to 98% by weight. When the content of the alkali-soluble resin (A) is in the above range, the development of the photosensitive resin composition, the adhesion of the obtained pattern, the solvent resistance, and the mechanical properties tend to be good. It is necessary to form a photosensitive resin composition on a structure of an organic EL device, for example, a transparent electrode ([o.g. tin-doped indium oxide), IZO (doped indium oxide: IZ), a transparent electrode). Since the photosensitive resin composition has good adhesion, even if an alkali-soluble resin is used, a pattern structure is formed, and a portion other than the pattern structure is, for example, a peripheral portion of the opening portion of the pattern structure. When the ink containing the organic EL material is applied to the opening of the pattern structure by an inkjet method or the like, the resin residual ink remaining on the peripheral edge portion of the opening portion is detached. "DeWetting" light The thickness of the micro-light-emitting layer or the like is uneven. For example, the film thickness of the light-emitting layer is thinner at the peripheral portion than the central portion of the open σ portion. Therefore, the electric power station and the central portion of the peripheral portion of the light-emitting layer are 323613 24 201229670 When the voltage is applied to the light-emitting layer, the current concentrates in the central portion of the peripheral portion. The center portion is darker than the peripheral portion. Thus, if the film thickness is uneven, it is considered to be caused by the film thickness difference. In particular, when "dewetting" is apparent, a light-emitting layer or the like is not formed on the peripheral portion of the opening, and when an electrode is formed directly on the light-emitting layer, a current leakage current is generated between the pair of electrodes. In order to solve the above problems, the present inventors have found that the alkali-soluble resin (A) is preferably a vinyl phenol resin (hereinafter sometimes referred to as " Polyvinyl phenol") or a novolac resin. In particular, it has been found that a pattern structure and a substrate which can ensure pattern formation of a photosensitive resin composition are obtained by using a polyvinyl phenol and a novolak resin in combination. The adhesion of (or the electrode) is substantially free of residue (the residue is not easily left) except for the pattern structure, and the heat resistance temperature is remarkably improved. The polyvinyl phenol may, for example, be a homopolymer of vinyl phenol, a vinyl phenol and a copolymer of a monomer copolymerizable with the like, etc. The polyvinyl phenol can be obtained by using 4-vinylphenol, 3-vinylphenol, 2-vinylphenol, 2-mercapto-4-vinylphenol, A vinyl phenol such as 2,6-dimercapto-4-vinylphenol may be used alone or in combination of two or more kinds thereof, and azobisisobutyronitrile or benzoquinone-based peroxide-specific polymerization initiator may be used for radical polymerization. The related vinyl phenols and polyvinyl phenols are described in detail in the "Phenol Phenol Foundation and Application," (published by the Education Publishing Center) of the Maruzen Petrochemical Research Institute. It can be copolymerized with vinyl phenol. The monomer may, for example, be isopropenylphenol, acrylic acid, methacrylic acid, stupid ethylene, maleic anhydride, maleic acid 25 323613 201229670 imine, ethyl acetate or the like. In the case of 4 笙 笙 t t t, etc., it is preferably a single polymer of vinyl phenol, particularly a single polymer of p-vinyl phenol. The weight average molecular weight of the freshly-dispersed polystyrene measured by the polyethylene-based average molecular (IV) H gel permeation chromatography (GPC) (five), generally from 3,000 to 20,000, preferably from 4,000 to 15 Torr, more preferably 5 〇. 〇〇 to 10000. If the weight average molecular weight of Juyi County is too low, even if the cross-linking reaction of the exposed area is caused, the molecular weight will not increase sufficiently, so it is easy to dissolve in the test liquid, X, and the improvement of the difficulty is reduced. It is difficult to obtain a good photoresist pattern because the weight average molecular weight of the alkenyl group is too large, and the difference in solubility between the exposed area and the unexposed ship hiding liquid becomes small. The varnish resin can also be used in a wide range of applications in the field of photoresist. The heterogeneous lipid system can be obtained, for example, by reacting _ with _fines in the presence of an acid catalyst such as oxalic acid. The hope class can be exemplified by, for example, categorical, phthalic acid, methicone, p-toluine, 2,3-dimethylphenol, 2,5-dimethylphenol, 3,4-dimethylphenol, 3,5 Dimethylphenol, 2"4-dinonylphenol, 2,6-didecylphenol, 2,3,5-tridecylphenol, 2,3,6-trimethylidene, 2-third Kipan, 3_Terti-butyl, di-butyl, 2'-methyl-benzene: phenol, 4-methyl resorcinol, 5-mercaptoresorcin, 4-third Base, 2_methoxy, 3-methoxy, 2-propyl, 3-propyl, 4-propyl, 2-isopropyl, 2-methoxy_5_曱基纷, third butyl + methyl expectant, thyme thyroid (thymQl), different thyme. These may be used alone or in combination of two or more. Examples of the aldehydes include formaldehyde, formalin, paraformaldehyde, trioxane, acetaldehyde, propionaldehyde, benzaldehyde, phenylacetaldehyde, α-phenylpropene 323613 26 201229670 aldehyde, /9-phenylpropane Aldehyde, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, o-chlorobenzaldehyde, m-gas aldehyde, p-chlorobenzoaldehyde, o-methylbenzofural, m-Methylphenylfurfural, p-methylphenylfurfural, p-ethylphenylhydrazine, p-n-butylbenzoic acid, p- and the like. The ketones may, for example, be propylene, methyl ethyl ketone, diethyl ketone or diphenyl ketone. These may be used alone or in combination of two or more. Among the above, from the viewpoint of the sensitivity controllability of the photoresist, it is particularly preferable to use a combination of a sputum and a formazan to make a phenol novolak resin which is condensed with a plate, a fumarin or a polymethyl group. The feed weight ratio of m-cresol to p-cresol (m-cresol: p-nonylphenol) is generally 80: 20 to 20: 8 〇, and Yibei is 7 〇 30 to 50: 50. Further, it is also preferred to use 3,5-dinonylphenol (i.e., 3 5 -dioxanol). At this time, the weight ratio of cresols (the total amount of m-cresol and p-cresol) to the feed ratio of dimethyl phenol (preferably: 3,5_2?) is generally 5〇: '5〇 to Do not: 20, preferably 60 · 40 to 70: 30. The average molecular weight of the brittle varnish resin is the weight average molecular weight (Mw) converted to monodisperse polystyrene by GPC, generally from 1 〇〇〇 to 10,000, preferably from 2 〇〇〇 to 7 〇〇〇, more And it is 2500 to 6000. If the weight average molecular weight of the novolak resin is too low, even if the crosslinking reaction of the exposed portion is caused, the molecular weight increase effect = 1 is easily dissolved in the alkali developing solution. @If the average weight of the secret material m is too high, the difference in the solubility of the exposure liquid to the exposure liquid becomes small, so it is difficult to obtain a good = photoresist pattern. The weight of the polyethylene surface and the secret lyophile can be controlled within the desired range by adjusting the synthesis conditions.乂^ If the resin obtained by the synthesis is pulverized by (1), the solid-liquid extraction method is carried out with the solvent of 323613 27 201229670, and (2) the sap of the tree obtained by the synthesis is dissolved in a good solvent. The weight average molecular weight can be controlled by weakly spraying or dropping a weak solvent to perform solid-liquid or liquid-to-liquid extraction. The measurement of the weight average molecular weight to which GPC is applied is carried out using Gpc measuring apparatus using a Gpc measuring apparatus under the following conditions. The column: T 〇 〇 〇 TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 05 〇. The ratio of use of imi polyvinyl alcohol to novolac resin is the weight ratio of polyethylene to varnish resin, generally 3〇: 7〇 to 95: 5, preferably 35: 65 to 95: 5, more preferably 40: 60 to 90: 10 range. The higher the ratio of the polyethylene is desired, the better the heat resistance of the photoresist pattern is, but it is easily peeled off from the substrate. If the ratio of the novolak resin becomes large, the problem that the resist pattern is peeled off from the substrate can be solved, but the heat resistance is lowered. Therefore, the ratio of the heat resistance to the peeling resistance is improved by the ratio of the two in the above range. <Acid generator (D)> The acid generator (D) is a compound which generates an acid by active light and generates an acid by heat. The compound which generates an acid by the active light is exposed by the actinic radiation. 'As long as it is a substance which produces Bronsted acid or Lewis acid 28 323613 201229670, it is not particularly limited, and rust salt and halogenated can be used. Organic compound, quinonediazide compound, α,α'-bis(sulfonyl)diazononane compound, α-carbonyl-α sulfonyldiazomethane compound, sulfone compound, organic acid ester compound, organic A known compound such as an acid amide compound or an organic acid quinone compound. Among these, aromatic sulfonate, aromatic iodonium salt, aromatic rust salt, aromatic compound having a halogenated alkyl residue, and the like are preferable. The acid generator (D) is preferably selected from the viewpoint of the spectral sensitivity in accordance with the wavelength of the light source for exposing the pattern. Examples of the rust salt include diazonium salt such as diazonium rust salt, ammonium salt, diphenyl iodine rust trifluorosulfonate, sulfur rust such as triphenyl sulfonium trifluorosulfonate, scale salt, and arsenic rust salt. Oxygen rust salts, etc. Examples of the halogenated organic compound include a halogen-containing oxadiazole-based compound, a three-till-based compound containing a halogen, a halogen-containing acetophenone-based compound, a halogen-containing benzophenone-based compound, and a halogen-containing sulfoxide-based compound. a compound containing a substance, a halogen-containing sputum, a halogen-containing scorpion, a halogen-containing squat, a halogen-containing 2-0 pyrone compound, and other halogen-containing compounds. A heterocyclic compound, a halogen-containing aliphatic hydrocarbon compound, a halogen-containing aromatic hydrocarbon compound, a halogenated sulfur-based compound, or the like. Specific examples of the halogenated organic compound include, for example, tris(2,3-dibromopropyl)phosphate, tris(2,3-dibromo-3-chloropropyl)phosphate, tetrabromochlorobutane, 2-[ 2-(3,4-Dimethoxyphenyl)vinyl]-4,6-bis(trichlorothyl)-S-three wells, hexachlorobenzene, hexabromobenzene, hexabromocyclodene, Hexabromocyclododecene, hexabromobiphenyl, allyltribromophenyl ether, tetrachlorobisphenol A, tetrabromobisphenol A, 29 323613 201229670 tetrachlorobisphenol A double (gas ethyl) Ether, bis(bromoethyl)ether of tetrabromobisphenol A, bis(2,3-di-propyl)ether of bisphenol A, bis(2,3-dibromopropyl)ether of bisphenol A, Tetrachlorobisphenol A bis(2,3-di-propyl)ether, tetrabromobisphenol octahydrate bis(2,3-dibromopropyl)ether, tetrachlorobisphenol s, tetrabromobisphenol 3. Four-gas bisphenol bis (chloroethyl) ether, tetrabromobisphenol s bis (bromoethyl) ether, bisphenol s bis (2, 3-dipropyl) ether, bisphenol s Bis(2,3-dibromopropyl)ether, tris(2,3-dibromopropyl)trimeric isocyanate, 2,2-bis(4-hydroxy-3,5-dibromophenyl)propane, 2,2-bis(4-(2-hydroxyethoxy)-3, 5-di Halogen-based flame retardant such as bromophenyl)propane; di-diphenyltrichloroethane, pentachlorophenol, 2,H diphenyl, 4-nitrophenyl ether, 2, 4-diphenyl, 3, _ 曱 一 一 4, _ Shi Xiaoji phenyl shout, 2, 4-dichlorophenoxyacetic acid, 4, 5, 6, 7-four gas 酜 internal brewing (4'5'6'7-tetrachlorop hthalide ), 1,1-bis(4-phenylphenyl)ethanol, 1,1-bis(4-phenylphenyl)-2, 2,2-trisethanol, 2, 4, 4,, 5-tetrachloro An organic chlorine-based pesticide such as diphenyl sulfide or 2, 4, 4, or 5-tetrachlorodiphenyl sulfone. Specific examples of the quinonediazide compound include, for example, anthracene, 2-benzoquinonediazide 4sulfonate, 1,2-naphthoquinonediazide-4-sulfonate, and 1,2-naphthoquinone Sulfonic acid ester of diazide derivative of nitrogen-5-sulfonate, 2, naphthoquinonediazide-4-sulfonate, 2, 1-benzoquinonediazide-5-acid ;丨,2-benzoquinone_2_diazide-4-sulfonate, anthracene, 2-naphthoquinone-2-diazide-4-sulfuric gas, 1,2-naphthoquinone-2-diplex Nitro- 5-sulfonium chloride, 1,2-naphthoquinone-1-diazide-6-sulfonate, 1,2-stupid-1-diazide~5_sulfonate, etc. Derivatives such as sulfonium gas. Specific examples of the α,α bis(sulfonyl)diazononane compound may, for example, be an unsubstituted, symmetric or asymmetric substituted alkyl group, alkenyl group, 30 323613 201229670 aromatic group, or heterocyclic ring. The olefinic group such as an alkyl group, an alkenyl group or a hydrazine group substituted with an A-generation symmetry or an asymmetry, or a continuation basis weight of a heterocyclic group, and a specific example of the compound may, for example, be a sulfone compound, a disulfone compound, or the like which is substituted or symmetrical with a substituted alkyl group, a aryl group, an aryl group, an aromatic group or a hetero group. Specific examples of the oxime organic acid ester include, for example, a carboxylic acid ester. Examples of the sulfonate, phosphonium, and the like, and the organic acid guanamine may, for example, be carboxyguanamine, sulfonamide or phosphoniumamine, and the oxime iodide may, for example, be carboxyimine, sulfonimide or phosphorus. Further, the acid generator (D) may, for example, be a cyclohexylmethyl group (2-side sulfonium hexyl) sulphide trifluorosulfonate or a dicyclohexyl group (a 2-oxo ring already). 11 thiopurine trifluorosulfonate, 2-oxocyclohexyl (2-norbornyl) trifluoromethanesulfonate, 2-cyclohexylsulfonylcyclohexanone, Methyl (2~ side dicyclohexyl) sulfonium trifluoromethanesulfonate, triphenylsulfonate trifluoromethane @ & salt, diphenyl moth argon triflate, N- a succinimide = & methane sulfonate, p-toluene benzene sulfonate, etc. The acid generator (D) relative to the alkali-soluble resin (A) 1 〇〇 by weight, _ generally with 0.1 It is used in a ratio of 10 parts by weight, preferably 0.3 to 8 parts by weight, more preferably 5 to 5 parts by weight. The ratio of the S-man generator (D) is too small, and has a resist pattern. The shape is deteriorated. _ <crosslinking agent (C)> 31 323613 201229670 Crosslinking agent (c) crosslinks the alkali-soluble resin in the presence of an acid generated by irradiation (exposure) of active light a compound (acidic substance). Such a crosslinking agent may, for example, be an alkoxymethylated urea resin, an alkoxymethylated melamine resin, an alkoxylated uronic acid resin, an alkoxy group. A well-known acid crosslinkable compound such as a glycolic urea resin or an alkoxymethylated amine resin. Other examples include alkyl etherified melamine resin and benzoguanamine resin. Alkyl etherified benzoguanamine resin, urea resin, alkyl etherified urea tree ruthenium, amine Sa Sa Sa 曱 树脂 resin, soluble 朌 e (e) type 酴曱 树脂 resin, alkyl Ether-soluble novolac type phenol formaldehyde resin, epoxy resin, etc. Among these, 'alkoxymethylated amine-based resin is preferable, and specific examples thereof include an oxiranyl amide-based amine resin and an ethoxy group. a methylated amino group-based resin, a n-propoxy-fluorenylated amine-based resin, a n-butoxymethylated amine-based resin, etc. Among these, 'in view of good resolution, particularly hexamethoxy A methoxymethylated amine-based resin such as melamine, and a commercially available product of an alkoxy-nonylated amino-based resin, for example, PL-1170, PL-1174, UFR65, CYMEL 300, CYMEL 303 (above 'Mitsui Cytec Corporation System), Βχ_4〇〇〇, NikaUc MW 30, MX 290 (above 'Sanwa Chemical Co., Ltd.), etc. These parent-linking agents can be used individually or in combination of 2 or more types. The crosslinking agent (C) is used in an amount of from 0.5 to 60 parts by weight, preferably from 1 to 50 parts by weight, more preferably from 2 to 40 parts by weight, based on 100 parts by weight of the alkali-soluble resin (A). . If the amount of the crosslinking agent used is too small, the crosslinking reaction is difficult to sufficiently proceed. 'The residual film ratio of the photoresist pattern after development using the alkali developing solution is lowered'. The swelling of the photoresist pattern or the meandering or the like is liable to occur. If the crosslinking agent is used too much, there is a decrease in resolution. 32 323613 201229670 * The photosensitive resin composition of the present invention may contain a solvent (E). The solvent which can be used in the present invention is, for example, an ester solvent (a solvent containing -coo-), an ether solvent other than the ester solvent (a solvent containing _〇_), an ether v ester solvent (containing _C00-and- The ketone solvent (solvent containing -C0-) other than the solvent, the alcohol solvent, the aromatic hydrocarbon solvent, the guanamine solvent, the dimethyl sulfoxide, and the like are selected and used. Examples of the ester solvent include decyl lactate, ethyl lactate, butyl lactic acid, methyl 2-hydroxyisobutyrate, ethyl acetate, n-butyl acetate, isobutyl acetonate, amyl formate, isoamyl acetate, and propionic acid. Butyl ester, isopropyl butyrate, ethyl butyrate, butyl butyrate, decyl pyruvate, ethyl pyruvate, propyl pyruvate, decyl acetate, ethyl acetate, cyclohexanol Acid ester, ^ - butyrolactone and the like. Examples of the ether solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, and diethylene glycol. Monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, 3-methoxy-1-butanol, 3- Methoxy-3-methylbutanol, tetrahydrofuran, tetrahydropyran, 1,4-dioxane, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl Ethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl hydrazine, large citron, phenylethyl, methyl macroinic acid, and the like. The ether ester solvent may, for example, be methyl methoxyacetate, ethyl decyloxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate or methyl 3-methoxypropionate. , 3-methoxypropionic acid ethyl acetate, 3-ethoxylate, 3-ethoxypropionic acid ethyl acetate, 2-methoxypropionic acid brewing, 2_$oxypropyl 323613 33 201229670 ethyl acetate, Propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, methyl 2-nonoxy-2-methylpropanoate, 2-ethoxylate _2_ethyl propyl propionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether Acid ester, propylene glycol monopropyl ether acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol Monobutyl ether acetate and the like. The ketone solvent may, for example, be 4-hydroxy-4-methyl-2-pentanone, acetone, 2-butanone, 2-heptanone, 3-heptan, 4-heptanone, 4-mercapto-2-pentyl Ketone, cyclopentanone, cyclohexanone, isophorone, and the like. The alcohol solvent may, for example, be methanol, ethanol, propanol, butanol, hexanol, cyclohexanol, ethylene glycol, propylene glycol or glycerin. Examples of the aromatic hydrocarbon solvent include benzene, toluene, xylene, and trimethylbenzene. The guanamine solvent may, for example, be N,N-dimethylformamide, N,N-dimethylacetamide or N-methyl pirone. These can be used in combination of two or more types. Among the above-mentioned solvents, from the viewpoint of coatability and dryness, it is preferred to use an organic solvent having a wavelength of 12 Gt: 1 or more at iatir. Among them, it is preferably propanol monomethyl, propylene glycol monomethyl acetate, 3-ethoxypropionate, monoethylene glycol methyl ethyl ether, 3-methoxybutyl acetate, 3 _Methoxy 1 butanol and the like. If the solvent is used for this purpose, the coating can be suppressed, and the flatness of the coating film can be improved. The total amount of the components contained in the resin-containing composition of the solvent (8) in the photosensitive tree composition is preferably from 6 to 95% by weight. 323613 34 201229670 is more preferably from 70 to 90% by weight. In other words, the solid content of the photosensitive resin composition is preferably from 5 to 40% by weight, more preferably from 1 to 30% by weight. When the content of the solvent is within the above range, the flatness of the crucible formed by coating the photosensitive resin composition tends to be high. Here, the solid portion is a component from which a solvent is removed from the photosensitive resin composition. A compound that absorbs active light (hereinafter sometimes referred to as "light absorbing agent (H)") may be added to the photosensitive resin composition of the present invention as needed. If the photosensitive resin compound contains a compound that absorbs active light, when it is exposed, light is absorbed in the depth direction of the photoresist film, and the seal can be obtained from a tapered shape to an inverse cone shape or an external protrusion. (overhang) photoresist pattern. Further, the shape of the resist pattern is affected even by light reflection by exposure of the substrate or the ITO film formed on the substrate. Therefore, in order to prevent reflection of exposure light, it is necessary to have a light absorbing agent (Hh, in particular, a photosensitive resin composition using a combination of an acid generator (D) and a crosslinking agent (C), a cross-linking type chemical amplification photoresist, The acid generated by the irradiation of light diffuses in the photoresist film, and the cross-linking reaction is also caused in the region where the light is not irradiated, so that the shape of the resist pattern can be controlled by the presence of the light absorbing agent (U) absorbing the active light. The light absorbing agent (H) may be selected from a compound having an absorption region in a wavelength region in accordance with the wavelength of the exposure light source. However, when the light absorbing agent (H) is a compound having a low solubility in an alkali developing solution, the image is developed. After the light absorbing agent (H) is left on the substrate, it is preferred to use a compound such as a ketone or a ruthenium group to increase the solubility of the alkali imaging solution. For the purpose of the problem caused by such residue, it is preferable to select a higher absorbance of δ, and a sufficient amount of absorbance can be obtained in a small amount. The formed 323613 35 201229670 photoresist pattern is exposed in a post-exposure baking (PEB) or sputtering step. At high temperatures In some cases, the light absorbing agent (H) sublimes to contaminate the device, so the light absorbing agent (the compound which is low in sublimation property) is preferably a so-called azo dye. The azo dye can be exemplified. Such as azobenzene derivatives, azonaphthalene derivatives, azobenzene or azo naphthalene substituents of arylpyrrolidone, pyrazolone, pyrexolone, beta ratio β a heterocyclic aryl azo compound such as σm β, 嗟η, etc. These aryl azo compounds can be appropriately selected in length or substituent in order to set the absorption wavelength in a desired region. The type, etc. can be formed, for example, by substitution with an electron attracting group such as a sulfonic acid (metal salt) group, a sulfonate group, a sulfhydryl group, a carboxyl group, a nitrogen group, a (substituted) aryl group, or an alkyl group, or a sulfonyl group. An aryl azo compound having an absorption region set to a short wavelength. Further, an amine group which is substituted by an already substituted (substituted) alkyl group, a (substituted) aryl group or a polyoxyalkylene group, a hydroxyl group, and an oxygen-burning oxygen Substituting an electron supply group such as a group or an aryloxy group, or forming an absorption wavelength An aryl olefin compound in a long wavelength region, because the substituent has a group which lowers the solubility of the image forming liquid such as an amine group, and a base which improves the solubility to the alkali developing solution like a carboxyl group or a hydroxyl group, The sensitivity of the photosensitive resin composition of the present invention is practical, and it is preferred to appropriately select the type of the substituent of the aryl azo compound. The azo dye can be used in the range of 200 by selecting the structure of the compound or the type of the substituent. A broad-wavelength region of 500 nm absorbs various compounds of active light. The length of the conjugated system or the choice of substituents also conforms to compounds other than azo dyes, which mainly correspond to the wavelength range of 300 to 400 nm 36 323613 201229670 The compound may, for example, be a phenethyl street organism obtained by condensing (substituted) a compound of a benzophenone with a compound having an active methylene group. The substituent of the stupid system may, for example, be a transalkyl group, an alkoxy group or an atom-substituted pyridylamino group polyoxyalkylene group, (tetra), (tetra), an alkyl group, an alkoxy group, an alkylcarbonyl group. Or an arylcarbonyl group, etc. Examples of the compound having an active fluorenylene group include, for example, B., aryl acetate, α-cyano ketone, malonic acid ester, acetamidine acetate, etc., 3-dione Class, etc. ' Further, the light absorbing agent (Η) may also be a methine dye obtained by condensing an aryl group with a sialo ketone and an aryl acid, an aryl benzotriazole, and an amine and an aldehyde. a natural compound such as azo methine dye, curcumin or xanthone obtained from a condensate, etc. A quinonediazide sulfonate compound or a double azide compound having a dye of an aryl hydroxyl group For example, the solubility of the alkali developing solution may be changed simultaneously with the absorption of the exposure light, or the compound of the crosslinking reaction may be used to adjust the development characteristics. Further, the light absorbing agent (H) may be, for example, a cyanoethylene group. Styrene compound, 1-cyano-2-(4-dialkylaminophenyl) B, 对 (halogen substituted phenyl) Nitro)-dialkylaminobenzenes, 1-alkoxy-4-(4'-N,N-dialkylaminophenylazo)benzenes, dialkylamino compounds, 1,2- Dicyanoethylene, 9-cyano onion, 9-onion methylenemalononitrile, N-ethyl~3-leaf-s-s-mercaptopropane dinitrile, 2-(3,3-dicyano -2~ propylene)_3-methyl-1,3- sulphide, etc. The commercially available dye is used as a light absorbing agent (H), for example, oil yellow #101, oil yellow #103, Oil yellow #117, oil pink #312, oil green 323613 37 201229670 Color BG, oil blue BOS, oil blue #603, oil black BY, oil black This oil black T-505 (above Orient Chemical Industry Co., Ltd.) , leeches purple (CI 42555), sulfhydryl violet (CI 42535), rose red 45170 Β), malachite green (CI 42000), methylene blue (C. L 52 () ι ^, etc. The aforementioned 1-cyano-2 The -(4-dialkylaminophenyl) oxime is, for example, 1-carboxy-1-cyano-2-(4-di-n-hexylaminophenyl)ethylene, 1-cyano-2 -(4-Di-n-butylaminophenyl)ethylene, carboxy- to oxime-cyano- -2-(4-di-n-heptylaminophenyl)ethene, etc., having a fluorenyl group at the 1-position Cyano-2-(4-dialkylaminophenyl)vinyl. These are 1-cyano-2-(4-dialkylaminophenyl)ethene, oil yellow #101, oil yellow #103,油黄#107, etc., is particularly preferable from the viewpoint of excellent formation of an inverse tapered photoresist pattern profile. Further, the reverse tapered shape means a pattern structure in which a photosensitive resin composition pattern is formed. The cross-sectional shape of the object is a shape that changes widely as it leaves the substrate. When the cross-section forms a resist pattern of a reverse cone shape or an outer protrusion shape, the amount of the light absorbing agent (8) can be used depending on the film thickness or light of the resin composition. It is appropriate to use the type of the agent (H), etc., and it is difficult to penetrate the light when the film thickness is thick. Therefore, the amount of use can be relatively thin when used. The light absorbing agent (H) is used in an amount of from 1 to 8 parts by weight, based on the weight of the soluble resin, and is usually from 15 to 15 parts by weight, preferably from 5 to 1 part by weight. When the cross-section forms a smooth-shaped resist pattern, it is compared with the cut-off (four) anti-cone or outer-like photoresist pattern light absorber ((8) is used in comparison with the soluble resin (A). The weight I part is used in a ratio of not used (〇) to less than Q. i by weight. 323613 38 201229670 The photosensitive resin composition of the present invention may further contain a surfactant (F). For example, a polyfluorene-based surfactant, a fluorine-based surfactant, a surfactant, a polyoxo-based surfactant having a fluorine atom, etc. However, the % surfactant (F) is a fluorine-based liquid-repellent agent. (B) A compound having a different structure as a main component. The polyoxo-based surfactant may, for example, be a surfactant having a decane bond. For example, Toray Silicone DC3PA, Toray
SiliconeSH7 PA 、 Toray SiliconeDCll PA 、 Toray SiliconeSH21 PA、Toray Silicone SH28 PA、Toray Silicone SH29 PA、Toray Silicone SH30 PA、聚醚改質 聚發氧油SH 8400(商品名:Toray Dow Corning(股)製), KP321 、 KP322 、 KP323 、 KP324 、 KP326 、 KP340 、 KP341(信 越化學工業(股)製),了3戸400、丁3卩40卜丁3卩410、78卩4300、 TSF4440、TSF4445、TSF-4446、TSF4452、TSF4460(MomentiveSiliconeSH7 PA, Toray SiliconeDCll PA, Toray SiliconeSH21 PA, Toray Silicone SH28 PA, Toray Silicone SH29 PA, Toray Silicone SH30 PA, Polyether Modified Poly Oxygen SH 8400 (trade name: Toray Dow Corning), KP321 , KP322, KP323, KP324, KP326, KP340, KP341 (Shin-Etsu Chemical Industry Co., Ltd.), 3戸400, Ding 3卩40 Bu Ding 3卩410, 78卩4300, TSF4440, TSF4445, TSF-4446, TSF4452 , TSF4460 (Momentive
Performance Materials Japan 合同公司製)等。 氟系界面活性劑係可舉例如具有氟碳鏈之界面活性 劑’可舉例如 Fluorinert(註冊商標)FC430、Fluorinert FC431(住友 3M(股)製),Megaface(註冊商標)F142D、 Megaface F171、Megaface F172、Megaface F173、Megaface F177、Megaface F183、Megaface R30(DIC(股)製),Eftop (註冊商標)EF301、Ef top EF303、Ef top EF35卜 Ef top EF352 (三菱Materials電子化成(股)製),Surflon(註冊商標) S381、Surflon S382、Surf Ion SC101、Surf Ion SC105(旭 硝子(股)製),E5844(Daikin fine Chemical 研究所(股) 39 323613 201229670 製)等。 具有氟原子之聚石夕氧系界面活性劑,可舉例如具有石夕 氧烷鍵及氟碳鏈之界面活性劑,可舉例如Megaface(註冊 商標)R08、Megaface BL20、Megaface F475、Megaface F477、Megaface F443(DIC(股)製)等。較係可舉例如 Megaface(註冊商標)F475。 界面活性劑(F)之含量相對於感光性樹脂組成物所含 有之成分的合計量’為〇·〇〇1重量%以上〇.2重量%以下, 較佳係0. 002重量%以上〇. 1重量%以下,更佳係重量 /以上0· 05重量%以下。藉在此範圍含有界面活性劑(F), 可使塗膜之平坦性良好。 於本發明之感光性樹脂組成物依據需要而亦可併用填 充劑、其他之高分子化合物、密著促進劑、抗氧化劑、紫 外線吸收劑、光安定劑、鏈轉移劑等各種添加劑。 λ本發明之感光性樹脂組成物實質上不含有顏料及染料 等著色劑。亦即,在本發明之感光性樹脂組成物中,著色 劑對組成物全體的含量,例如較佳係未達丨重量%,更佳 未達0. 5重量%。 ’、 本發明之感光性樹脂組成物係填充於光程長為km之 石英槽内,使用分光光度計以測定波長4〇〇至7〇〇四之條 件下測定穿透率時的平均穿透率較佳係·以上,更^ 80%以上。 1糸 本發明之感光性樹脂組成物在塗膜時,塗膜之平岣 透率宜為9 0 %以上’更佳為9 5 %以上。此平均穿透率係使用 201229670 分光光度計以測定波長400至7〇〇nra之條件下測定加埶硬 化(例如以100至25(rc、5分鐘至3小時之條件硬化)後之 .3/zm厚度的塗膜時的平均值。藉此,可提供在可見光區 之透明性優異的塗膜。 / % 本發明之感光性樹脂組成物例如後述般,藉由塗佈於 基材(例如玻璃、金屬、塑膠等基板,形成有彩色濾光片'、 各種絕緣膜或導電膜、驅動電路等之此等基板)上可形成 為塗膜。塗膜宜為經乾燥及硬化者。又,所得到之塗膜圖 案化為所希望的形狀,可使用來作為圖案構造物。進」步 可使此等塗膜或圖案構造物形成為顯示裝置等構成零件的 一部分而使用。 首先,將本發明之感光性樹脂組成物塗佈於基材上。 塗佈係可使用旋塗器、模縫及旋塗器(slit and coater)、模縫塗佈器、喷墨機、輥塗器、浸塗器等各種 佈裝置。 η 乂 然後,宜乾燥或預烘烤而除去溶劑等揮發成分。藉此, 可得到平滑之未硬化塗膜。 胃 此時之塗膜的膜厚並無特別限定,可依所使用之材 料、用途等而適當調整,例如1至6/zm左右。 進一步,於所得到之未硬化塗膜’介由用以形成目的 之圖案的光罩’照射光例如產生自水銀燈、發光二極體 紫外線等。此時之光罩的形狀係無特別限定,而形狀或大 小只要依圖案的用途而選擇即可。 在近年之曝光機中係使用截取此波長域之遽光膜而戴 323613 41 201229670 取未達350nm之光,將436nm附近、408nm附近、365nm附 近之光使用取出此等波長域之帶通濾波器而選擇性地取 出,對曝光面全體均勻地照射略平行光線。若使用光罩對 位機*步進機等裝置,此時可進行遮罩與基材之正確對位。 藉由使曝光後之塗膜接觸顯像液而溶解特定部分例如 非曝光4 並顯像,而可得到目的之圖案形狀。 兮』像方法係可為液體覆蓋法(puddle ^M1〇pment)、 意:Ϊ:等之任-者。進-步於顯像時亦可使基材 像之顯餘宜為驗性化合物之水溶液。驗性 化&物了為無機及有機之驗性化合物。 無^驗性化合物的具體例可舉例如氫氧化鈉、氮氧 氫二納、鱗酸二氫納、磷酸氫二録、魏二氫 叙、狀二氫卸、石夕酸鈉、石夕酸鉀、碳酸納、碳_、碳 酸氫鈉、琰酸氫鉀、硼酸鈉、硼酸鉀、氨等。 有機之驗性化合物係可舉例如氫氧化四甲 化2-羥基己基三甲基銨、單甲基 7 土鉍虱氧 單乙基胺、二乙基胺、三乙基胺、單三曱基胺' 胺、乙醇胺等。 早異兩基胺、二異丙基 ^等之無機及有機的驗性化合物之水溶液中之濃度宜 為0. 01至10質量% ’更宜為〇. 03至5質量%。 顯像夜可含有界面活性劑。 劑可為非離子系界面活性劑、陰離子系界面 活性劑或1%離子系界面活性劑的任一者。 323613 42 201229670 非離子系界面活性劑可舉例如聚氧乙稀越、聚氧 乙稀芳基醚^聚t乙婦烧基芳基鱗、其他之聚氧乙稀衍生 •物、氧乙烯/氧两歸故段共聚物、山梨醇酐脂肪酸醋、聚氧 •乙烯山梨醇針脂肪酸酯、聚氧乙烯山梨醇脂肪酸酉旨、甘油 脂肪酸醋、聚氧乙烯脂肪酸黯、聚氧乙稀烧基胺等。 陰離子系界面活性劑係可舉例如月桂醇硫酸醋納或油 醇硫酸醋納之高級醇硫酸醋鹽類,月桂基琉酸納或月桂基 硫酸錄之烧基硫酸鹽類,十二碳基苯確酸納或十二碳基蔡 磺酸鈉之烧基芳基項酸鹽類等。 陽離子系界面活性劑係可舉例如硬脂基胺鹽酸鹽或氣 化月桂基三?錢之胺贱者f四級錄鹽等。 鹼顯像液中之界面活性劑的濃度較佳係〇 〇1至ι〇重 量%的範圍,更佳係〇. 05至8重量%,最佳係〇. i至5重量 % 0 顯像後,可藉水洗圖案化,而得到圖案構造物。進一 步可依需要而進行後烘烤。後埃烤宜為例如以⑽至24〇 C的溫度範圍進行10至180分鐘。 使未硬化塗骐曝光時,不使用形成有圖案之光罩,而 ^面地進打光照射及/或省略顯像,可得到不具有圖案之 膜。 如此做法而從本發明之感光性樹脂組成物所得到的圖 ^構造物係具有高的_性與撥液性,於圖案之形成部以 夕卜無殘漬(或非常少),故尤其在喷墨法等塗佈型製程中用 來作為用以製作彩色遽光片、液晶顯示元件的⑽電極、 323613 43 201229670 有機EL顯示元件及電路配線基板等所使用的間隔壁。尤其 本發明之感光性樹脂組成物係從上述特性來看適宜使用來 作為用以製作有機EL元件的間隔壁。 參照第3圖以說明有關為了於支撐基板上形成有機EL 元件所設之間隔壁,俵用上述感光性樹脂組成物而形成之 間隔壁形成製程。又’第3圖所示之間隔壁的錐狀形狀係 例示,未必須要為所例示之形狀,只要為可使有機虹層形 成均勻且平坦的膜厚之塗膜的構造即可。 首先,準備形成有第1電極2之支撐基板1(第3A圖)。 然後’藉由塗佈製程而使感光性樹脂組成物11於支樓基板 1上成膜,實施預烘烤(第3B圖)。其後,對於成膜之感光 性樹脂組成物’介由遮罩10而只於應形成間隔壁之部位選 擇性地照射光(第3C圖)。進一步,藉由顯像,實施後烘烤, 形成間隔壁3(第3D圖)。 又,間隔壁3係不限於單一之構成,例如可於第3圖 所示之間隔壁3上,進一步重疊間隔壁3a而形成(參照第 4A至4D圖)。此等所重疊之間隔壁3及3a可使用彼此相 同之感光性樹脂組成物而形成,又,亦可使用相異之感光 性樹脂組成物而形成。又,第4A至4D圖所示之間隔壁的 錐狀形狀係例示,未必須要為所例示之形狀,只要為可使 有機EL層形成均勻且平坦的膜厚之塗膜的構造即可。 因此’所層合之間隔壁可形成相同或分別相異之形狀。 如此重疊間隔壁而形成時係例如在第3D圖所得到之 支撐基板中,進一步,使感光性樹脂組成物塗佈成膜,實 323613 44 201229670 施預烘烤(第4B圖),曝光(第4C圖),顯像,實施後烘烤, 而形成間隔壁3a(第4D圖)。 . 繼而,例示說明有.關可使用來作為有機EL顯示裝置之 有機EL元件的構成。 ▲ 〈有機EL元件的構成〉 有機EL元件係至少具有1層之發光層作為有機EL 層,但有機EL層,可具有例如電洞注入層、電洞輸送層、 電子阻隔層、電洞阻隔層、電子輸送層及電子注入層等。 以下表示可能的有機EL元件之層構成的一例。 a) 陽極/發光層/陰極 b) 陽極/電洞注入層/發光層/陰極 c) 陽極/電洞注入層/發光層/電子注入層/陰極 d) 陽極/電洞注入層/發光層/電子輸送層/陰極 e) 陽極/電洞注入層/發光層/電子輸送層/電子注入層/陰 極 Ο陽極/電洞輸送層/發光層/陰極 g) 陽極/電洞輸送層/發光層/電子注入層/陰極 h) 陽極/電洞輸送層/發光層/電子輸送層/陰極 i) 陽極/電洞輸送層/發光層/電子輸送層/電子注入層/陰 極 j) 陽極/電洞注入層/電洞輸送層/發光層/陰極 k) 陽極/電洞注入層/電洞輸送層/發光層/電子注入層/陰 極 l) 陽極/電洞注入層/電洞輸送層/發光層/電子輸送層/陰 45 323613 201229670 極 m)陽極/電洞注入層/電洞輸送層/發光層/電子輸送層/電 子注入層/陰極 曰 η)陽極/發光層/電子注入層/陰極 〇)陽極/發光層/電子輸送層/陰極 Ρ)陽極/發光層/電子輸送層/電子注入層/陰極 (此處,記號「/」係表示挾住記號「/」之各層鄰接而層合。 以下相同)。 曰 又,發揮陽極功能之第1電極可在相對於第2電極靠 近支樓基板處配置,飾陰極功能之帛i電極亦可在相對 於第2電極靠近支撲基板處配置, 〈支撐基板〉 於支撐基板係可適宜使用在製造有機EL元件之步驟 中化學上無變化者,可使用例如玻璃、塑膠、高分子薄膜 及石夕板’以及層合此等者等。 〈陽極〉 從發光層所放射之光通過陽極而射出至外界之構成的 有機EL元件時,陽極可使用顯示光穿透性之電極。顯示光 穿透性之電極可使用金屬氧化物、金屬硫化物及金屬等的 ^膜可適宜使用導電度及光穿透率高者。陽極具體上係 可使用氧化銦、氧化鋅、氧化錫、ITG、銦鋅氧化物(IndiumPerformance Materials Japan contract company) and so on. The fluorine-based surfactant may, for example, be a surfactant having a fluorocarbon chain. For example, Fluorinert (registered trademark) FC430, Fluorinert FC431 (manufactured by Sumitomo 3M Co., Ltd.), Megaface (registered trademark) F142D, Megaface F171, Megaface F172, Megaface F173, Megaface F177, Megaface F183, Megaface R30 (made by DIC), Eftop (registered trademark) EF301, Ef top EF303, Ef top EF35, Ef top EF352 (Mitsubishi Materials electronic system) Surflon (registered trademark) S381, Surflon S382, Surf Ion SC101, Surf Ion SC105 (made by Asahi Glass Co., Ltd.), E5844 (Daikin Fine Chemical Research Institute (share) 39 323613 201229670), and the like. The polyoxo-based surfactant having a fluorine atom may, for example, be a surfactant having a oxacyclooxygen bond or a fluorocarbon chain, and examples thereof include Megaface (registered trademark) R08, Megaface BL20, Megaface F475, and Megaface F477. Megaface F443 (DIC system) and so on. For example, Megaface (registered trademark) F475 can be mentioned. 002重量百分比以上。 The amount of the surfactant (F) is more than 5% by weight of the total amount of the component of the photosensitive resin composition. 1% by weight or less, more preferably 0% by weight or more. By including the surfactant (F) in this range, the flatness of the coating film can be improved. The photosensitive resin composition of the present invention may be used in combination with various additives such as a filler, another polymer compound, an adhesion promoter, an antioxidant, an ultraviolet absorber, a photostabilizer, and a chain transfer agent. λ The photosensitive resin composition of the present invention does not substantially contain a coloring agent such as a pigment or a dye. 5重量%。 The content of the composition of the composition of the present invention is preferably less than 0.5% by weight. The photosensitive resin composition of the present invention is filled in a quartz cell having an optical path length of km, and the average penetration when the transmittance is measured using a spectrophotometer at a wavelength of 4 〇〇 to 7 〇〇 is measured. The rate is better than the above, more than 80%. When the photosensitive resin composition of the present invention is applied to a film, the flat film permeability of the coating film is preferably 90% or more and more preferably 95% or more. The average transmittance is determined by using a 201229670 spectrophotometer to determine the twist hardening under the conditions of a wavelength of 400 to 7 〇〇 nra (for example, after hardening at 100 to 25 (rc, 5 minutes to 3 hours). The average value of the coating film having a thickness of zm is obtained, whereby a coating film having excellent transparency in the visible light region can be provided. / % The photosensitive resin composition of the present invention is applied to a substrate (for example, glass) as described later. A substrate such as a metal, a plastic, or the like, which is formed with a color filter ', various insulating films, a conductive film, or a driving circuit, etc., may be formed as a coating film. The coating film is preferably dried and hardened. The obtained coating film is patterned into a desired shape and can be used as a pattern structure. Further, these coating films or pattern structures can be formed into a part of components such as a display device. First, the present invention will be used. The photosensitive resin composition is applied onto a substrate. The coating system may be a spin coater, a slit and a coater, a die coater, an inkjet machine, a roll coater, or a dip coater. Various cloth devices, etc. η 乂 then, should Drying or pre-baking to remove volatile components such as a solvent, thereby obtaining a smooth unhardened coating film. The film thickness of the coating film at the time of the stomach is not particularly limited, and can be appropriately adjusted depending on the materials and applications used. Further, for example, about 1 to 6/zm. Further, the obtained uncured coating film 'lighting light from the mask for forming the intended pattern' is generated, for example, from a mercury lamp, a light-emitting diode ultraviolet light, or the like. The shape of the cover is not particularly limited, and the shape or size may be selected according to the use of the pattern. In recent years, in the exposure machine, a light film that intercepts the wavelength region is used, and 323613 41 201229670 is used to take light of less than 350 nm. Light in the vicinity of 436 nm, in the vicinity of 408 nm, and in the vicinity of 365 nm is selectively taken out by using a band pass filter that takes out these wavelength domains, and the entire exposed surface is uniformly irradiated with a substantially parallel ray. If a reticle aligner* stepper is used In this case, the correct alignment of the mask and the substrate can be performed at this time. The target pattern shape can be obtained by dissolving a specific portion such as non-exposure 4 and developing the coating film after exposure to the developing solution. 』The method can be liquid cover method (puddle ^M1〇pment), meaning: Ϊ: etc.. In the development of the image, the substrate can also be used as an aqueous solution of the test compound. The organic compound and the organic compound are organic compounds. Specific examples of the non-testable compound include, for example, sodium hydroxide, dibasic hydrogen hydride, dihydrogen sodium hydride, hydrogen phosphate, and dihydrogen. Dihydrogenation, sodium sulphate, potassium oxalate, sodium carbonate, carbon _, sodium bicarbonate, potassium hydrogen citrate, sodium borate, potassium borate, ammonia, etc. The organic compound can be mentioned, for example. Tetramethylated 2-hydroxyhexyltrimethylammonium hydroxide, monomethyl 7 sulfonium oxide monoethylamine, diethylamine, triethylamine, monotridecylamine 'amine, ethanolamine, and the like. 01至10质量百分比的更优选为〇。 03 to 5质量%。 The concentration of the aqueous solution of the inorganic and organic test compound of the early dibasic amine, diisopropyl ^ and the like is preferably from 0.01 to 10% by mass. The imaging night may contain a surfactant. The agent may be any of a nonionic surfactant, an anionic surfactant, or a 1% ionic surfactant. 323613 42 201229670 Non-ionic surfactants include, for example, polyoxyethylene acetonide, polyoxyethylene aryl ethers, poly-t-butyl aryl aryl scales, other polyoxyethylene derivatives, oxyethylene/oxygen Two-stage copolymer, sorbitan fatty acid vinegar, polyoxyethylene sorbitol needle fatty acid ester, polyoxyethylene sorbitol fatty acid hydrazine, glycerin fatty acid vinegar, polyoxyethylene fatty acid hydrazine, polyoxyethylene amide Wait. The anionic surfactant may, for example, be a higher alcoholic sulphate of lauryl sulphate or oleyl sulphate, a sodium laurate or a lauryl sulphate, and a 12-carbon benzene. The aryl aryl acid salt of sodium sulphate or sodium dodecyl sulfonate. The cationic surfactant may, for example, be stearylamine hydrochloride or vaporized lauryl trisole? The amine of the money is the fourth grade salt. The concentration of the surfactant in the alkali developing solution is preferably in the range of 〇〇1 to ι〇% by weight, more preferably 至. 05 to 8% by weight, optimal 〇. i to 5% by weight 0 after development The pattern structure can be obtained by patterning with water. Further, post-baking can be carried out as needed. The post-bake is preferably carried out, for example, at a temperature ranging from (10) to 24 ° C for 10 to 180 minutes. When the uncured enamel is exposed, the reticle formed with the pattern is not used, and the film is irradiated with light and/or the development is omitted, whereby a film having no pattern can be obtained. In this way, the structure obtained from the photosensitive resin composition of the present invention has high _ property and liquid repellency, and there is no residue (or very little) in the formation portion of the pattern, so In the coating type process such as the inkjet method, it is used as a partition for use in the production of a color light-receiving sheet, a liquid crystal display element (10) electrode, a 323613 43 201229670 organic EL display element, and a circuit wiring board. In particular, the photosensitive resin composition of the present invention is suitably used as a partition wall for producing an organic EL element from the above characteristics. Referring to Fig. 3, a partition wall forming process for forming a partition wall provided in an organic EL element on a support substrate by using the above-mentioned photosensitive resin composition will be described. Further, the tapered shape of the partition wall shown in Fig. 3 is not necessarily required to be exemplified, and may be any structure as long as the organic rainbow layer is formed into a uniform and flat film thickness. First, the support substrate 1 on which the first electrode 2 is formed is prepared (Fig. 3A). Then, the photosensitive resin composition 11 is formed on the support substrate 1 by a coating process, and prebaking is carried out (Fig. 3B). Thereafter, the film-forming photosensitive resin composition is selectively irradiated with light through the mask 10 only at a portion where the partition walls are to be formed (Fig. 3C). Further, by performing development, post-baking is performed to form the partition walls 3 (Fig. 3D). Further, the partition wall 3 is not limited to a single structure, and may be formed by, for example, overlapping the partition walls 3a on the partition wall 3 shown in Fig. 3 (see Figs. 4A to 4D). The partition walls 3 and 3a which are overlapped with each other may be formed using the same photosensitive resin composition, or may be formed using a different photosensitive resin composition. Further, the tapered shape of the partition walls shown in Figs. 4A to 4D is not necessarily required to be exemplified, and may be any structure as long as the organic EL layer can form a coating film having a uniform and flat film thickness. Thus, the laminated walls can be formed into the same or different shapes. When the partition walls are formed as described above, for example, in the support substrate obtained in FIG. 3D, the photosensitive resin composition is further coated into a film, and 323613 44 201229670 is prebaked (Fig. 4B), exposure (No. 4C), development, post-baking, and forming a partition 3a (Fig. 4D). Then, the configuration of the organic EL element which can be used as the organic EL display device can be exemplified. ▲ <Configuration of Organic EL Element> The organic EL element has at least one light-emitting layer as an organic EL layer, but the organic EL layer may have, for example, a hole injection layer, a hole transport layer, an electron blocking layer, and a hole blocking layer. , electron transport layer and electron injection layer. An example of a layer configuration of a possible organic EL device will be described below. a) anode/light-emitting layer/cathode b) anode/hole injection layer/light-emitting layer/cathode c) anode/hole injection layer/light-emitting layer/electron injection layer/cathode d) anode/hole injection layer/light-emitting layer/ Electron transport layer / cathode e) Anode / hole injection layer / luminescent layer / electron transport layer / electron injection layer / cathode Ο anode / hole transport layer / luminescent layer / cathode g) anode / hole transport layer / luminescent layer / Electron injection layer / cathode h) Anode / hole transport layer / luminescent layer / electron transport layer / cathode i) Anode / hole transport layer / luminescent layer / electron transport layer / electron injection layer / cathode j) Anode / hole injection Layer/hole transport layer/light-emitting layer/cathode k) anode/hole injection layer/hole transport layer/light-emitting layer/electron injection layer/cathode l) anode/hole injection layer/hole transport layer/light-emitting layer/ Electron transport layer / yin 45 323613 201229670 pole m) anode / hole injection layer / hole transport layer / luminescent layer / electron transport layer / electron injection layer / cathode 曰 )) anode / luminescent layer / electron injection layer / cathode 〇) Anode / luminescent layer / electron transport layer / cathode Ρ) anode / luminescent layer / electron transport layer / electron injection layer / cathode (here, mark "/" system Xiezhu shows layers adjacent symbol "/" and the laminated hereinafter the same). Further, the first electrode that functions as an anode can be disposed close to the branch substrate with respect to the second electrode, and the electrode that is decorated with the cathode function can be disposed closer to the branch substrate with respect to the second electrode, <support substrate> For the support substrate, those which are chemically unchanged in the step of producing the organic EL element can be suitably used, and for example, glass, plastic, polymer film, and stone plate can be used, and laminates and the like can be used. <Anode> When the light emitted from the light-emitting layer is emitted to the organic EL element constituted by the outside through the anode, an electrode for exhibiting light transmittance can be used for the anode. As the electrode for exhibiting light transmittance, a film such as a metal oxide, a metal sulfide or a metal can be used, and a conductivity and a light transmittance can be suitably used. Indium oxide, zinc oxide, tin oxide, ITG, indium zinc oxide (Indium) can be used as the anode.
Zinc Oxide .簡稱IZ0)、金、始、銀及銅等所構成之薄膜, ,等之中,可適宜使用ITO、IZ0細匕錫所構成之薄膜。 陽極之製作方法可舉例如真空蒸鍵法、_法、離子鐘法、 323613 46 201229670 .啤 電鍍法等。又,該陽極可使用聚苯胺或其衍生物、聚隹吩 或其衍生物等有機的透明導電膜。 . 〈陰極〉 、 ㊣極之材料宜為功函數小’電子容易注人發光層且導 電度高的材料。又,從陽極側取出光之構成的有機EL元件 係為了使從發光層所放射之光以陰極朝陽極側反射 ,陰極 之材料宜為對可見光之反射率高的材料。陰極可使用例如 驗金屬、驗土金屬、過渡金屬及週期表之13族金屬等。陰 極之材料可使用例如鐘、鈉、鉀、铷、铯、鈹、鎂、鈣、 錄、鋇、紹、銳、鈒、辞、紀、鋼、錦、m鏡 等金屬;前述金屬之中的2種以上之合金;前述金屬之中 的1種以上與金、銀、鉑、銅、猛、鈦、鈷、鎳、鎢、錫 之中的1種以上之合金;或者,石墨或石墨層間化合物等。 σ金之例可舉例如鎂_銀合金、鎂-銦合金、鎂_鋁合金、銦 "'銀合金、鋰-鋁合金、鋰-鎂合金、鋰-銦合金、鈣_鋁合金 ,。又’陰極可使用由導電性金屬氧化物及導電性有機物 等所構成之透明導電性電極。具體上導電性金屬氧化物可 舉例如氧化銦、氧化鋅、氧化錫、ΙΤ0、及ΙΖ0,導電性有 機物可舉例如聚苯胺或其衍生物、聚嘆吩或其衍生物等。 X陰極亦可以層合2層以上之層合體所構成。亦可使用電 子注入層作為陰極。 ,極之製作方法係可舉例如真空練法、離子鑛法等。 JL Μ· : 4陰極之膜厚係考量所求之特性或成膜步驟之簡 易性等而適當蚊,例如—至1(^,宜為心至/ 47 323613 201229670 最且為50nm Ji 5G〇nm。又,陽極及陰極之中相當於 第2電極之電極相較於第2電極及前述_EL層的界面與 ,隔壁之頂面在支稽基板之厚度方向中的間隔壁,可形成 為使其膜厚變厚。 〈電洞注入層〉 構成電洞注入層之電洞注入材料可舉例如氧化釩、氧 翻、氧化対及氧化料氧化物,或苯基胺系化合物、輕 射狀(starbum)型胺系化合物、駄菁系、非晶碳、聚苯胺 及聚噻吩衍生物等。 電洞注入層之成膜方法可舉例如源自含有電洞注入材 ;斗之溶液的成膜。例如可藉由使含有電洞注人材料之溶液 以特定之塗佈法而塗佈成膜,進一步使其固化而形成電洞 注入^層。 ^電洞注入層之膜厚係考量所求之特性及步驟之簡易性 =而適當設定,例如lnU 1_,宜為2咖至500nm,最 且為5nm至200nm。 〈電洞輸送層〉 構成電洞輸送層之電洞輸送材料係可舉例如聚乙烯基 味坐或其衍生物、聚石夕烧或其衍生物、於侧鏈或主鍵具有 方香族胺之聚矽氧烷衍生物、吡唑啉衍生物、芳基胺衍生 物、二苯乙烯衍生物、三苯基二胺衍生物 '聚苯胺或其衍 生物、聚噻吩或其衍生物、聚芳基胺或其衍生物、聚^比咯 或其衍生物、聚(對伸苯基伸乙稀基)或其衍生物、或聚 (2, 5-伸噻吩基伸乙烯基)或其衍生物等。 323613 48 201229670 « 電洞輸送層之膜厚係考量所求之特性及成膜步驟之簡 易性等而設定’例如lnm至1 "m,宜為2nm至500nm,最 , 宜為 5nm 至 200nm。 〈發光層〉 % 發光層一般主要係由發出螢光及/或磷光之有機物、或 該有機物與補助此之摻雜物所形成。摻雜物係例如為了提 昇發光效率、或改變發光波長所加入。又,構成發光層之 有機物可為低分子化合物或高分子化合物,藉塗佈製程形 成發光層時,發光層宜含有高分子化合物。構成發光層之 南分子化合物的換算成聚苯乙烯的數目平均分子量例如為 10至10左右。構成發光層之發光材料可舉例如以下之色 素系材料、金屬錯合物緒料、高分子系材料、摻雜物材 (色素系材料) 色素諸料係可舉例如卜環戍基基丙烧I胺 :;=:等二°坐衍生物,並輪生物、二苯 聚體、吡唑啉二聚 花衍生物、寡Μ物衍生物、 體、喧°丫_生物、香豆素衍生物等。 (金屬錯合物系材料) 稀土 ί】錯ί 系材料例如於中心金屬具有Tb、Eu、Dy等 ' 5 Λ Zn' Be、Ir、Pt等,於配位基具有噚二 323613 49 201229670 重 苯 笨並嗟。坐 yrin)鋅錯合 唑、噻二唑、苯基吡啶、苯基苯並咪唑、喹啉構 屬錯合物,可舉例如銀錯合物、#錯合物等具有=等之金 態激發狀態之發光的金;I錯合物,_基㈣錯^ 並羥基喹啉鈹錯合物、苯並噚唑啉基鋅錯合物、a σ 鋅錯合物、偶氮曱基鋅錯合物、卟啉(porph 物、啡啉(phenanthroline)銪錯合物等 (高分子系材料) 高分子系材料係可舉例如聚對伸苯基亞乙烯衍生物、 聚嘆吩衍生物、聚對伸苯基衍生物、聚㈣衍生物、聚 块衍生物、聚g衍生物、聚乙稀基七續生物、上述色素 系材料或金屬錯合物系發光材料進行高分子化者等。、 發光層之厚度一般約為2nm至200nm。 〈電子輸送層〉 構成電子輸送層之電子輸送材料係可使用公知者,可 ,例如卩亏一唾衍生物、蔥職二曱院或其衍生物、苯自昆或其 行生物萘職或其衍生物、蔥酿或其衍生物、四氰基蔥職 —曱烷或其衍生物、第酮衍生物、二苯基二氰基乙烯或其 衍生物、聯苯醌衍生物、或者8-羥基喹啉或其衍生物之金 屬錯合物、聚喹啉或其衍生物、聚喹噚啉或其衍生物、聚 第或其衍生物等。 電子輸送層之膜厚係考量所求之特性及成膜步驟之簡 易f專而適當设定,例如lnm至1 μ m,宜為2nm至500nm, 最宜為5nm至2〇〇nm 〇 〈電子注入層〉 50 323613 201229670 ·. ㈢構成電子注入層之材料係依據發光層之種類而適當選 擇取適的材料,可舉例如驗金屬、驗土金屬、含有驗金屬 .土金屬之中的1種類以上的合金、鹼金屬或鹼土金屬 、 厘化物、齒化物、碳酸鹽及此等之物質的混合物等。鹼 鹼金屬之氧化物、齒化物及碳酸鹽之例可舉例如鋰、 化细卸-麵、絶、氧化鐘、氣化鐘、氧化納、氟化納、氧 鋰 氟化鉀、氧化飯、氣化物、氧化絶、氣化絶、碳酸 鴎二组又’鹼土金屬、鹼土金屬之氧化物、鹵化物、碳酸 鹽:舉例如鎮,、鎖,、氧化鎮、氣化鎮、氧蝴酸 2化鈣、氧化鋇、氟化鋇、氧化鳃、氟化 入等層可以層合2層以上之層合體構成,可舉:如 電子注入層之膜厚宜為Inm至lem左右。 上述之各有機&層可藉由噴嘴印刷法、喷墨印刷法、 ^版印刷法、凹版印刷法等塗佈型製程,或真空蒸、 機鍍法或CVD法等而形成。 又’在#佈型製程巾係將含有各有機此層之材料 劑之印墨進行塗佈'成膜,進一步,蒸發溶劑,將其固化 而形成有機EL'’此時所使用之印墨的溶劑可使用例如氣 一氯曱烧—氯乙院等氯系溶劑,四氫吱味等醚系溶 劑’曱苯、一甲笨等芳香族烴系溶劑,丙酮、曱基乙基酮 等_系溶劑:乙酸乙酉旨、乙酸丁酿、乙酸乙基赛路蘇等酿 系溶劑及水等。 (實施例) 323613 51 201229670 以下,藉實施例而更詳細地說明本發明。例中之「0/〇 及「伤」要無特別記載,為重量%及重量份。 (合成例1) 於具備回流冷卻管、氮氣導入管、溫度計及授摔裝置 之四口 ^瓶中’置入曱基丙稀酸30份、丙稀酸2—經基乙 基甲基酉曰3〇伤、甲基丙彿酸異冰片基醋40份、2-硫某乙 醇5.9份、兩二醇單甲基鍵乙酸酉旨163份加熱至耽 ==,30分鐘。再添加偶氮雙異丁腈h 3份,聚 ° . 、^,置入丙烯酸2~異氰酸酯基乙基酯(Karenz ::昭和電卫⑷製)29.3份,置人相對於全組成物為 50ppm之風醌早甲基醚,在氮氣流下於抗反應 :、 得到固形份34重量%之丘聚物r 、 〜、寺, 所付到之驗可溶性樹脂^的 夜 (合成例2) 句刀子里(Mw)為4900。 之二溫度計及_置 ㈣78份、甲基丙烯酸二3’3, 4其4, 5,5,6,6, 6-九 醋19.5份、甲基丙烯酸縮水甘曱基丙烯酸異冰片基 Μ份、丙二醇單甲基醚己峻西=醋13份、十二碳硫醇 y- 266 份,加熱至 70°C 後, 〇t鐘。再“偶氣雙異丁腈1份,聚合 換算)之份33 44%、酸價68mg_KGH/g(固形份 的重量平均分子量為7500。 元 氟系撥液劑Ba係具有以下結構單 323613 52 201229670A thin film made of ITO or IZ0 fine tantalum may be suitably used for a film composed of Zinc Oxide (IZ0), gold, silver, copper, and the like. Examples of the method for producing the anode include a vacuum evaporation method, a _ method, an ion clock method, 323613 46 201229670, a beer plating method, and the like. Further, as the anode, an organic transparent conductive film such as polyaniline or a derivative thereof, polybenzazole or a derivative thereof can be used. <Cathode> The material of the positive electrode is preferably a material having a small work function. The electron is easily injected into the light-emitting layer and has a high conductivity. Further, in order to reflect the light emitted from the light-emitting layer toward the anode side by the cathode, the material of the cathode is preferably a material having a high reflectance to visible light. As the cathode, for example, a metal, a soil-checking metal, a transition metal, and a Group 13 metal of the periodic table can be used. The material of the cathode can use metals such as clock, sodium, potassium, strontium, barium, strontium, magnesium, calcium, strontium, strontium, sulphur, ruthenium, ruthenium, ruthenium, steel, brocade, m mirror; among the aforementioned metals Two or more kinds of alloys; one or more of the above metals and one or more of gold, silver, platinum, copper, lanthanum, titanium, cobalt, nickel, tungsten, and tin; or graphite or graphite intercalation compounds Wait. Examples of the σ gold include, for example, a magnesium-silver alloy, a magnesium-indium alloy, a magnesium-aluminum alloy, an indium alloy, a lithium-aluminum alloy, a lithium-magnesium alloy, a lithium-indium alloy, and a calcium-aluminum alloy. Further, a transparent conductive electrode composed of a conductive metal oxide, a conductive organic substance or the like can be used as the cathode. Specifically, the conductive metal oxide may, for example, be indium oxide, zinc oxide, tin oxide, ruthenium 0, or ruthenium. The conductivity may be, for example, polyaniline or a derivative thereof, polyseptene or a derivative thereof. The X cathode may be formed by laminating two or more laminates. An electron injecting layer can also be used as the cathode. The production method of the electrode is, for example, a vacuum training method, an ion ore method, or the like. JL Μ· : 4 The film thickness of the cathode is considered to be the property or the simplicity of the film forming step, etc., and the mosquito is, for example, -1 (^, preferably the heart to / 47 323613 201229670 and the most 50 nm Ji 5G 〇 nm Further, among the anode and the cathode, the electrode corresponding to the second electrode is formed such that the interface between the second electrode and the _EL layer and the top surface of the partition wall in the thickness direction of the substrate are formed so that The thickness of the film is increased. <The hole injection layer> The hole injection material constituting the hole injection layer may, for example, be vanadium oxide, oxygen vortex, cerium oxide and oxidized oxide, or a phenylamine compound or light-emitting ( Starbum) type amine compound, phthalocyanine type, amorphous carbon, polyaniline, polythiophene derivative, etc. The film formation method of the hole injection layer is, for example, a film formation from a solution containing a hole injection material or a bucket. For example, a solution containing a hole-injecting material can be applied to a film by a specific coating method, and further cured to form a hole injection layer. ^ The film thickness of the hole injection layer is determined. The simplicity of the features and steps = and appropriate settings, such as lnU 1_, should be 2 to 500n m, the most is 5 nm to 200 nm. <Porous transport layer> The hole transporting material constituting the hole transport layer may, for example, be a polyvinyl scent or a derivative thereof, a polydise or a derivative thereof, on the side a polyoxyalkylene derivative having a aryl aromatic amine, a pyrazoline derivative, an arylamine derivative, a stilbene derivative, a triphenyldiamine derivative 'polyaniline or a derivative thereof, a poly Thiophene or a derivative thereof, a polyarylamine or a derivative thereof, a polypyrrole or a derivative thereof, a poly(p-phenylene vinylene) or a derivative thereof, or a poly(2,5-thiophenylene group) 323613 48 201229670 « The thickness of the hole transport layer is determined by the characteristics of the film thickness and the ease of the film formation step, for example, 1 nm to 1 " m, preferably 2 nm to 500 nm, Most preferably, it is from 5 nm to 200 nm. <Light Emitting Layer> % The light emitting layer is generally formed mainly by an organic substance that emits fluorescence and/or phosphorescence, or an organic substance and a dopant which is supplemented with the dopant. Adding efficiency, or changing the wavelength of the light, and adding the organic matter constituting the light-emitting layer When a light-emitting layer is formed by a coating process for a low molecular compound or a polymer compound, the light-emitting layer preferably contains a polymer compound, and the number average molecular weight of the south molecular compound constituting the light-emitting layer in terms of polystyrene is, for example, about 10 to 10. Examples of the light-emitting material constituting the light-emitting layer include the following pigment-based materials, metal-based complex materials, polymer-based materials, and dopant materials (pigment-based materials). Iamine:; =: equal two-degree sitting derivative, and round organism, diphenyl polymer, pyrazoline dimeric flower derivative, oligosaccharide derivative, body, 喧 ° 丫 生物, coumarin derivative Etc. (Metal complex material) Rare earth ί] ί 系 系 系 系 系 系 系 系 系 系 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 323 Heavy benzene is stupid. Sitting on yrin) zinc oxazole, thiadiazole, phenylpyridine, phenyl benzimidazole, quinoline structure complex, for example, silver complex, # complex, etc. State of the luminescent gold; I complex, _ base (tetra) ^ hydroxyquinolinium complex, benzoxazolinyl zinc complex, a σ zinc complex, azo hydrazine zinc And porphyrin (porph, phenanthroline 铕 complex, etc. (polymer material). The polymer material may, for example, be a polyparaphenylene vinylene derivative, a polyphene derivative, or a poly pair. a phenyl derivative, a poly(tetra) derivative, a polyblock derivative, a polyg derivative, a polyethylene sulphide, a pigment material or a metal complex luminescent material, and the like. The thickness of the layer is generally about 2 nm to 200 nm. <Electron transport layer> The electron transport material constituting the electron transport layer may be a known one, and may be, for example, a derivative of sputum, a scallion, or a derivative thereof, benzene. From Kunming or its bio-naphthalene or its derivatives, onion or its derivatives, tetracyano onion-decane or its derivatives , a ketone derivative, diphenyldicyanoethylene or a derivative thereof, a biphenyl hydrazine derivative, or a metal complex of 8-hydroxyquinoline or a derivative thereof, polyquinoline or a derivative thereof, poly a quinoxaline or a derivative thereof, a polydipeptide or a derivative thereof, etc. The film thickness of the electron transport layer is appropriately determined in consideration of the properties and the film formation step, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, most preferably 5 nm to 2 〇〇 nm 〇 <electron injection layer> 50 323613 201229670 · (3) The material constituting the electron injection layer is appropriately selected depending on the type of the light-emitting layer, for example, metal inspection , a test metal, an alloy containing one or more kinds of metals, an alkali metal or an alkaline earth metal, a sulphate, a dentate, a carbonate, and the like, and an alkali metal oxide. Examples of the tooth compound and the carbonate salt include, for example, lithium, a fine surface, a surface, an oxidizing clock, a gasification clock, a sodium oxide, a sodium fluoride, a potassium oxychloride potassium fluoride, a rice oxide, a vaporization, an oxidation gas, and a gas. The two groups of bismuth carbonate and strontium carbonate are alkaline earth metals and alkaline earth metals. Oxides, halides, carbonates: for example, town, lock, oxidized town, gasification town, oxyvalerate calcium, cerium oxide, lanthanum fluoride, cerium oxide, fluorinated into layers can be laminated 2 The laminate structure of the layer or more may be, for example, a film thickness of the electron injection layer of about Inm to lem. Each of the above organic & layers may be by nozzle printing method, inkjet printing method, printing method, gravure printing. A coating type process such as a method, or a vacuum evaporation method, a machine plating method, a CVD method, or the like. Further, in the #布型制巾, the ink containing the organic material of the organic layer is coated to form a film, and further The solvent is evaporated and solidified to form an organic EL'. The solvent used for the ink used in this case can be, for example, a chlorine-based solvent such as gas-chlorosilane-chlorobenzene, or an ether solvent such as tetrahydroanthracene. Aromatic hydrocarbon-based solvent such as acetone, sulfhydryl ethyl ketone, etc. _ solvent: acetic acid acetonitrile, acetic acid butyl, acetic acid ethyl sirushiol and other brewing solvents and water. (Embodiment) 323613 51 201229670 Hereinafter, the present invention will be described in more detail by way of examples. In the example, "0/〇 and "injury" are not specifically described, and are % by weight and parts by weight. (Synthesis Example 1) In a four-neck bottle equipped with a reflux cooling tube, a nitrogen gas introduction tube, a thermometer, and a dropping device, 30 parts of mercaptoacrylic acid and 2% ethylidene methyl hydrazide were placed. 3 bruises, 40 parts of isopropanol methacrylate, 5.9 parts of 2-sulfoethanol, and 163 parts of didiol monomethyl bond acetate were heated to 耽== for 30 minutes. Further, 3 parts of azobisisobutyronitrile was added, and the mixture was polymerized with 2% isocyanate ethyl ester (Karenz: Showa Denko (4)), 29.3 parts, and placed at 50 ppm relative to the total composition. The wind 醌 early methyl ether, under the nitrogen flow in the anti-reaction:, get the solid content of 34% by weight of the polymer r, ~, the temple, the night of the soluble resin ^ (synthesis example 2) sentence knife (Mw) is 4900. The second thermometer and _ set (four) 78 parts, methacrylic acid two 3'3, 4 of which 4, 5,5,6,6,6-9 vinegar 19.5 parts, methacrylic acid glycidyl acrylate isobornyl hydrazine, propylene glycol single Methyl ether hexancil = 13 parts of vinegar, y- 266 parts of dodecane thiol, heated to 70 ° C, 〇 t clock. Further, the fraction of "oxygen diisobutyronitrile 1 part, polymerization conversion" was 33 44%, and the acid value was 68 mg_KGH/g (the weight average molecular weight of the solid portion was 7,500. The fluorine-based liquid repellent Ba had the following structure list 323613 52 201229670
(合成例3) 於具備回流冷卻管、氮氣導入管、溫度計及攪拌裝置 之四口燒瓶中,置入氯丙烯酸3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8,8, 8-十三氟辛酯78份、曱基丙烯酸19.5份、甲基丙烯 酸異冰片基酯19. 5份、曱基丙烯酸縮水甘油基酯13份、 十二碳硫醇12. 7份、丙二醇單甲基醚乙酸酯266份,加熱 至7(TC後,在氮氣流下攪拌30分鐘。再添加偶氮雙異丁 腈1份,聚合18小時,得到固形份33重量%、酸價65mg-KOH/g(固形份換算)之共聚物(氟系撥液劑Bb)的溶液。所 得到之樹脂Bb的重量平均分子量為6800。 氟系撥液劑Bb係具有以下結構單元。(Synthesis Example 3) In a four-necked flask equipped with a reflux cooling tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, chloroacrylic acid 3, 3, 4, 4, 5, 5, 6, 6, 7, 7, 8 was placed. 5份,8,8-tridecafluorooctyl ester 78 parts, methacrylic acid 19.5 parts, isobornyl methacrylate 19.5 parts, glycidyl methacrylate 13 parts, 12-carbon thiol 12. 7 parts 266 parts of propylene glycol monomethyl ether acetate, heated to 7 (TC, stirred under a nitrogen stream for 30 minutes. Add 1 part of azobisisobutyronitrile, polymerization for 18 hours, to obtain a solid content of 33% by weight, acid value A solution of a copolymer (fluorine-based liquid repellent Bb) of 65 mg-KOH/g (solid content conversion). The obtained resin Bb has a weight average molecular weight of 6,800. The fluorine-based liquid repellent Bb has the following structural unit.
-^ch2—A 4-ch2- >=0 於合成例1、2、3所得到之樹脂的重量平均分子量(Mw) 及數目平均分子量(Μη)的測定係使用GPC法,而以如下的 條件實施。 裝置:K 2479(島津製作所(股)製)-^ch2—A 4-ch2->=0 The weight average molecular weight (Mw) and the number average molecular weight (Μη) of the resins obtained in Synthesis Examples 1, 2, and 3 were determined by the GPC method as follows. Conditional implementation. Device: K 2479 (Shimadzu Corporation (stock) system)
管柱:SHIMADZU Shim-pack GPC-80M 53 323613 201229670Pipe string: SHIMADZU Shim-pack GPC-80M 53 323613 201229670
管柱溫度:40°C 溶劑:THF(四氫呋喃) 流速:1. Oml/分Column temperature: 40 ° C Solvent: THF (tetrahydrofuran) Flow rate: 1. Oml / min
檢測器:RI 將上述所得到之換算成聚苯乙烯的重量平均分子量及 數目平均分子量的比(Mw/Mn)作為分子量分布。 (合成例4) 得到由聚對乙烯酚(重量平均分子量6000)90重量份 以及以間-曱酴/對-甲紛為70/30(重量比)的馈入比與甲搭 進行脫水縮合而得到之酚酸清漆樹脂(重量平均分子量 4000)10重量份所構成之驗可溶性樹脂Aa。 又得到由聚對乙烯酚(重量平均分子量6000)60重量 份以及以間-曱酚/對-甲酚以70/3〇(重量比)的饋入比與甲 醛進行脫水縮合而得到之紛酸清漆樹脂(重量平均分子量 4000)40重量份所構成之鹼可溶性樹脂Aa,。 〈感光性樹脂之調製〉 以使固形份量成為丨8· 0%的方式將各成分混合於溶劑 Ea(丙二醇單曱基醚乙酸酯)’得到表3記載之負型感光性 樹脂組成物1、2、3。 54 323613 201229670 [表3] 實施例 實施例 比較例 感光性樹脂組成物 1 2 3 撿可溶性樹脂(A) Aa 96. 1 — — Aa, — 78. 8 Ab — 一 63. 8 氟系撥液劑(B) Ba — — 3. 4 Bb 0. 2 0. 2 一 交聯劑(C) Ca 2.9 20. 2 — Cb — — 1.7 酸產生劑(D) Da 1.0 1.0 一 添加劑(H) Ha 5. 〇 5. 0 一 其他成分(G) Ga — — 1. 7 Gb — — 2. 7 Gc — 一 26.8 固形份量(%) 18.0 18.0 18. 0 表3中’在實施例中之各成分的數值表示使感光性樹 脂組成物中之固形份(A+C+D)為1〇〇重量份時各成分的重 量%(組成比率)。在比較例中之各成分的數值表示使感光性 樹脂組成物中之固形份(A+B+C+G)為1〇〇重量份時各成分 的重里% (組成比率)。 在實施例及比較例中所使用之各成分係如下。Detector: RI The ratio (Mw/Mn) of the weight average molecular weight and the number average molecular weight converted into polystyrene obtained above was defined as a molecular weight distribution. (Synthesis Example 4) Dehydration condensation was obtained from a feed ratio of poly(p-vinylphenol) (weight average molecular weight 6000) of 90 parts by weight and a ratio of 70/30 (weight ratio) of m-p-/p---- The obtained phenolic acid varnish resin (weight average molecular weight: 4000) was 10 parts by weight of the soluble resin Aa. Further, it was obtained by dehydration condensation of 60 parts by weight of poly(p-vinylphenol) (weight average molecular weight 6000) and 70/3 Torr (weight ratio) of m-p-phenol/p-cresol with formaldehyde. The alkali-soluble resin Aa composed of 40 parts by weight of a varnish resin (weight average molecular weight: 4000). <Preparation of photosensitive resin> The negative photosensitive resin composition 1 described in Table 3 was obtained by mixing each component in the solvent Ea (propylene glycol monodecyl ether acetate) so that the solid content was 丨8.0%. 2, 3. 54 323613 201229670 [Table 3] Examples Examples Comparative Example Photosensitive Resin Composition 1 2 3 捡 Soluble Resin (A) Aa 96. 1 — — Aa, — 78. 8 Ab — A 63. 8 Fluoride-based liquid repellent (B) Ba — — 3. 4 Bb 0. 2 0. 2 A crosslinking agent (C) Ca 2.9 20. 2 — Cb — — 1.7 Acid generator (D) Da 1.0 1.0 An additive (H) Ha 5. 〇5. 0 one other component (G) Ga — — 7 Gb — — 2. 7 Gc — a 26.8 solid fraction (%) 18.0 18.0 18. 0 The numerical representation of the components in the examples in Table 3 When the solid content (A+C+D) in the photosensitive resin composition is 1 part by weight, the weight % (composition ratio) of each component. The numerical value of each component in the comparative example indicates the weight % (composition ratio) of each component when the solid content (A + B + C + G) in the photosensitive resin composition is 1 part by weight. The components used in the examples and comparative examples are as follows.
Ca ·二聚氰胺系樹脂交聯劑(三井Cytec公司製、c me 1 303) ymeCa · melamine resin crosslinker (manufactured by Mitsui Cytec, c me 1 303) yme
Cb.二聚氧胺系樹脂交聯劑(二井Cytec公司製、Cyme 1 323613 55 201229670 300)Cb. Dioxyamine-based resin cross-linking agent (manufactured by Mitsui Cytec Co., Ltd., Cyme 1 323613 55 201229670 300)
Ha :光吸收劑(染料)〇rient化學公司製:油黃色 Ga :四氫醜酸酐(Rikacid TH :新日本理化(股)製)Ha: Light absorbing agent (dye) 〇rient Chemical Co., Ltd.: Oil yellow Ga: Tetrahydro uric anhydride (Rikacid TH: New Japan Physicochemical Co., Ltd.)
Gb : 2-羥基-l-U~[4-(2-羥基-2-甲基丙醯基)-苯甲基]苯 基}-2-甲基丙烧-1-酮(光聚合起始劑irgacure 127 ; BASF Japan(股)製)Gb : 2-hydroxy-lU~[4-(2-hydroxy-2-methylpropenyl)-benzyl]phenyl}-2-methylpropan-1-one (photopolymerization initiator irgacure) 127 ; BASF Japan (shareholding system)
Gc :新戊四醇四丙烯酸酯(聚合性化合物α-ΤΜΜΤ ;新 中村化學工業(股)製) 〈組成物之穿透率〉 對於上述所得到之感光性樹脂組成物,分別使用紫外 線可見光近紅外線分光光度計(V-650 ;日本分光(股)製) (石央槽,光程長.1 cm),測定400至70Onra中之平均穿透 率(%)。結果表示於表4中。 [表4] 平均穿透率(%) 感光性樹脂組成物1 91 感光性樹脂組成物2 91 感光性樹脂組成物3 93 〈塗膜之製作〉 將2英叫見方之玻璃基板(Eagle XG; Corning公司製) 以中性清潔劑、水及醇依序洗淨後’乾燥。於此玻璃基板 上’將上述所得到之感光性樹脂組成物1、2、3分別以使 後烘烤後之膜厚成為3.〇vm的方式旋塗,以減壓乾燥機 56 323613 201229670 # (Microtek(股)製)減壓乾燥至減壓度成為6讥%後,以加 熱板於80°C預烘烤2分鐘而乾燥。冷卻後,使用曝光機 • (TME—15〇RSK ; Topcon(股)製,光源:超高壓水銀燈),在 . 大氣環境下照射曝光量50mJ/Cm2(365nm基準)之光《又, 對此時之感光性樹脂組成物的照射係使用超高壓水銀燈。 光照射後,感光性樹脂組成物1、2係藉由以加熱板於Η 〇 °C烘烤60秒鐘而使曝光部交聯。其後,於含有非離子性界 面活性劑0.12%與氫氧化鉀0.04%之水系顯像液中將前述 塗膜於23°C浸潰並搖動60秒而使其接觸,其後,烘箱中, 以230°C加熱20分鐘(後烘烤)而得到塗膜。 對於感光性樹脂組成物3除了將曝光量換成5〇0mJ/cm2 (365nm基準),同時不實施光照射後之烘烤以外,其餘係 與上述同樣的方法得到塗膜。 〈塗膜之平均穿透率〉 對於所得到之塗膜,使用顯微分光測定裝置(0SP-SP200 ; OLYMPUS公司製),測定400至700nm之平均穿透 率(%)。穿透率變高意指吸收變小。 〈接觸角〉 對於所得到之塗膜,使用接觸角計(DGDFast/60 ; GBX 公司製)’測定與大茴香醚之接觸角。測定結果表示於表5 中〇 57 323613 201229670 [表5] 接觸角(°) 感光性樹脂組成物1之塗膜 33 感光性樹脂組成物2之塗膜 30 感光性樹脂組成物3之塗膜 28 接觸角愈高,意指撥液性愈高。在塗膜之接觸角愈高, 則使用相同之感光性樹脂組成物所形成的圖案中接觸角亦 高。以接觸角高之感光性樹脂組成物形成間隔壁,在以該 間隔壁所包圍之中藉喷墨裝置印上印墨時,印墨易斥開。 因此,例如若藉喷墨法製作彩色濾光片,很難產生在相鄰 之像素區域間的印墨之混色。 〈耐熱性評估〉 使所得到之塗膜在無塵烘箱中以240°C加熱1小時, 測定膜厚及穿透率。從加熱前後之膜厚及400nm之穿透 率,依下式,分別求出變化率。 膜厚變化率(%)=加熱後之膜厚(// m)/加熱前之膜厚 (β m)xl00 穿透率變化率(%)=加熱後之穿透率(%)/加熱前之穿透 率(ο/〇)χ100 若塗膜之耐熱性為良好,即使使用相同之感光性樹脂 組成物所形成的圖案,耐熱性亦良好。結果表示於表6中。 58 323613 201229670 [表6] 膜厚變化率(%) 穿透率變化率 感光性樹脂組成物1之塗膜 97 95 感光性樹脂組成物2之塗膜 97 95 感光性樹脂組成物3之塗膜 88 93 〈圖案形成〉 將2英吋見方之玻璃基板(Eagle XG; Corning公司製) 以中性清潔劑、水及醇依序洗淨後,乾燥。於此玻璃基板‘ 上,將感光性樹脂組成物1、2分別以使後烘烤後之膜厚成 為3.5em的方式旋塗,以減壓乾燥機(Microtek(股)製) 減壓乾燥至減壓度成為66kPa後,以加熱板於80°C預烘烤 2分鐘而乾燥。冷卻後,分別塗佈有此感光性樹脂組成物 1、2、3之基板與石英玻璃製光罩之間隔為10" m,使用曝 光機(TME-150RSK ; Topcon(股)製,光源:超高壓水銀燈), 在大氣環境下照射曝光量50mJ/cm2(365nm基準)之光。又, 對此時之感光性樹脂組成物的照射係使源自超高壓水銀燈 之放射光通過光學過濾膜(UV-33 ;朝日分光(股)製)而進 行。又,就光罩而言,使用圖案(具有i邊為13/zm之複數 正方形的透光部,該正方形間隔為100/zm)(亦即透光部) 形成於同一平面上之光罩。 光照射後,感光性樹脂組成物卜2係藉由以加埶板於 1HTC烘烤60秒鐘使曝光部交聯。其後,於含有非離子性 界面活性劑0.12%與氫氧化鉀〇·_之水輪像液中將前 323613 59 201229670 述塗膜以25°C浸潰並搖動100秒而顯像,水洗後,烘箱中, 以235 C後烘烤15分鐘而得到圖案。 對於感光性樹脂組成物3除了將曝光量換成5〇〇mj/cm2 (365ηπι基準)’同時不實施光照射後之洪烤以外’其餘係 與上述同樣的方法得到塗膜β 〈「有無」圖案部以外之殘渣的判定〉 於被由上述所形成之圖案構造物所構成的間隔壁包圍 之區域,以喷墨裝置(ULVAC製Litrex 142Ρ)填充純水與大 菌香喊。用顯微鏡觀察是否在間隔壁與被間隔壁所包圍之 區域之邊界部產生斥開。從實施例之感光性樹脂組成物1、 2所得到之間隔壁不產生斥開,從比較例之感光性樹脂組 成物3所得到之間隔壁係產生斥開° 從實施例之結果,可知藉由使用本發明之負型感光性 樹脂組成物,可形成耐熱性優異之塗膜及圖案部份以外無 殘渣(非常少)之圖案。 【圖式簡單說明】 第1圖係顯示裝置之有機EL元件的截面圖。 第2A圖係用以說明有機EL層之形成方法的圖。 第圖係用以說明有機EL層之形成方法的圖。 第%圖係用以說明有機EL層之形成方法的圖。 第3A圖係用以說明間隔壁之形成方法的圖。 第3B圖係用以說明間隔壁之形成方法的圖。 第3C圖係用以說明間隔壁之形成方法的圖。 第3D圖係用以說明間隔壁之形成方法的圖。 60 323613 201229670 第4A圖係用以說明間隔壁之形成方法的圖。 第4B圖係用以說明間隔壁之形成方法的圖。 . 第4C圖係用以說明間隔壁之形成方法的圖。 第4D圖係用以說明間隔壁之形成方法的圖。 【主要元件符號說明】 1 支撐基板 2 第1電極 3 間隔壁 3a 間隔壁 4 有機EL層 5 被間隔壁包圍之區域 6 印墨 7 第2電極 10 遮罩 11 感光性樹脂組成物Gc: pentaerythritol tetraacrylate (polymerizable compound α-ΤΜΜΤ; manufactured by Shin-Nakamura Chemical Co., Ltd.) <Permeability of composition> For the photosensitive resin composition obtained above, ultraviolet light-visible light is used Infrared spectrophotometer (V-650; manufactured by JASCO Corporation) (Shiyang trough, optical path length. 1 cm), and the average transmittance (%) in 400 to 70 Onra was measured. The results are shown in Table 4. [Table 4] Average transmittance (%) Photosensitive resin composition 1 91 Photosensitive resin composition 2 91 Photosensitive resin composition 3 93 <Production of coating film> A glass substrate of 2 inches square (Eagle XG; Corning company) Washed with neutral detergent, water and alcohol in order to 'dry. On the glass substrate, the photosensitive resin compositions 1, 2, and 3 obtained above were each spin-coated so that the film thickness after post-baking became 3. 〇vm, and the vacuum drying machine 56 323613 201229670 # (manufactured by Microtek Co., Ltd.) After drying under reduced pressure to a reduced pressure of 6 讥%, it was pre-baked at 80 ° C for 2 minutes on a hot plate and dried. After cooling, use an exposure machine (TME-15〇RSK; Topcon (source), light source: ultra-high pressure mercury lamp) to illuminate the exposure of 50mJ/cm2 (365nm reference) in the atmosphere. The irradiation of the photosensitive resin composition uses an ultrahigh pressure mercury lamp. After the light irradiation, the photosensitive resin compositions 1 and 2 were crosslinked by baking with a hot plate at Η ° C for 60 seconds. Thereafter, the coating film was immersed at 23 ° C in a water-based developing solution containing 0.12% of a nonionic surfactant and 0.04% of potassium hydroxide, and shaken for 60 seconds to be brought into contact, and thereafter, in an oven. The film was heated at 230 ° C for 20 minutes (post-baking) to obtain a coating film. In the photosensitive resin composition 3, a coating film was obtained in the same manner as above except that the exposure amount was changed to 5 〇 0 mJ/cm 2 (the 365 nm standard) and the baking after the light irradiation was not performed. <Average Transmittance of Coating Film> The obtained coating film was measured for an average transmittance (%) of 400 to 700 nm using a microscopic spectrometry apparatus (0SP-SP200; manufactured by OLYMPUS Co., Ltd.). A high penetration rate means that the absorption becomes small. <Contact angle> With respect to the obtained coating film, the contact angle with anisole was measured using a contact angle meter (DGDFast/60; manufactured by GBX Corporation). The measurement results are shown in Table 5 〇57 323613 201229670 [Table 5] Contact angle (°) Coating film 33 of photosensitive resin composition 1 Coating film 30 of photosensitive resin composition 2 Coating film 28 of photosensitive resin composition 3 The higher the contact angle, the higher the liquid repellency. The higher the contact angle of the coating film, the higher the contact angle in the pattern formed using the same photosensitive resin composition. The partition wall is formed of a photosensitive resin composition having a high contact angle, and when ink is printed by an ink jet device surrounded by the partition wall, the ink is easily detached. Therefore, for example, if a color filter is produced by an ink jet method, it is difficult to produce a color mixture of inks between adjacent pixel regions. <Evaluation of heat resistance> The obtained coating film was heated at 240 ° C for 1 hour in a dust-free oven to measure the film thickness and the transmittance. From the film thickness before and after heating and the transmittance at 400 nm, the rate of change was determined according to the following formula. Film thickness change rate (%) = film thickness after heating (// m) / film thickness before heating (β m) xl00 rate of change of transmittance (%) = transmittance after heating (%) / before heating Transmittance (ο/〇) χ 100 If the heat resistance of the coating film is good, heat resistance is good even if a pattern formed of the same photosensitive resin composition is used. The results are shown in Table 6. 58 323613 201229670 [Table 6] Film thickness change rate (%) Transmissivity change rate Photosensitive resin composition 1 coating film 97 95 Photosensitive resin composition 2 coating film 97 95 Photosensitive resin composition 3 coating film 88 93 <Pattern formation> A 2 inch square glass substrate (Eagle XG; manufactured by Corning) was washed with a neutral detergent, water and alcohol, and dried. On the glass substrate, the photosensitive resin compositions 1 and 2 were spin-coated so that the film thickness after post-baking was 3.5 cm, and dried under reduced pressure in a vacuum dryer (manufactured by Microtek Co., Ltd.). After the degree of pressure reduction was 66 kPa, it was prebaked at 80 ° C for 2 minutes on a hot plate to be dried. After cooling, the distance between the substrate coated with the photosensitive resin compositions 1, 2, and 3 and the quartz glass mask was 10 " m, using an exposure machine (TME-150RSK; Topcon), light source: super High-pressure mercury lamp), which emits light of an exposure amount of 50 mJ/cm 2 (365 nm reference) in an atmospheric environment. Further, the irradiation of the photosensitive resin composition at this time is carried out by passing the emitted light from the ultrahigh pressure mercury lamp through an optical filter film (UV-33; manufactured by Asahi Co., Ltd.). Further, as for the photomask, a pattern (a light-transmissive portion having a plurality of squares having an i-side of 13/zm and a square interval of 100/zm) (i.e., a light-transmitting portion) is formed on the same plane. After the light irradiation, the photosensitive resin composition was crosslinked by baking with a twisted plate at 1 HTC for 60 seconds. Thereafter, the film of the former 323613 59 201229670 was immersed in a water-in-water image solution containing 0.12% of a nonionic surfactant and potassium hydroxide 〇·_ at 25 ° C and shaken for 100 seconds to be imaged, after washing. In the oven, the pattern was obtained by baking at 235 C for 15 minutes. In the photosensitive resin composition 3, the exposure amount was changed to 5 〇〇mj/cm 2 (365 ηπι basis) and the baking was performed without performing light irradiation. The rest of the film was obtained in the same manner as described above. Determination of Residues Other than Patterns> In a region surrounded by the partition walls formed of the pattern structures formed as described above, pure water and large bacteria are filled with an inkjet device (Litrex 142Ρ manufactured by ULVAC). It was observed with a microscope whether or not repulsion occurred at the boundary portion between the partition wall and the region surrounded by the partition wall. The partition walls obtained from the photosensitive resin compositions 1 and 2 of the examples were not repelled, and the partition walls obtained from the photosensitive resin composition 3 of the comparative example were repelled. From the results of the examples, it is known that By using the negative photosensitive resin composition of the present invention, it is possible to form a pattern having no residue (very few) other than the coating film and the pattern portion having excellent heat resistance. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an organic EL element of a display device. Fig. 2A is a view for explaining a method of forming an organic EL layer. The figure is a diagram for explaining a method of forming an organic EL layer. The first graph is a diagram for explaining a method of forming an organic EL layer. Fig. 3A is a view for explaining a method of forming a partition wall. Fig. 3B is a view for explaining a method of forming the partition walls. Fig. 3C is a view for explaining a method of forming a partition wall. Fig. 3D is a view for explaining a method of forming a partition wall. 60 323613 201229670 Figure 4A is a diagram for explaining a method of forming a partition wall. Fig. 4B is a view for explaining a method of forming a partition wall. Fig. 4C is a view for explaining a method of forming a partition wall. Fig. 4D is a view for explaining a method of forming a partition wall. [Main component symbol description] 1 Support substrate 2 First electrode 3 Partition wall 3a Partition wall 4 Organic EL layer 5 Area surrounded by the partition wall 6 Ink 7 Second electrode 10 Mask 11 Photosensitive resin composition
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TWI797892B (en) * | 2020-12-28 | 2023-04-01 | 日商昭和電工股份有限公司 | Photosensitive resin composition and organic EL element partition wall |
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JP5835014B2 (en) * | 2011-03-31 | 2015-12-24 | Jsr株式会社 | Pixel pattern forming method and color filter manufacturing method |
KR20140065351A (en) * | 2012-11-21 | 2014-05-29 | 신닛테츠 수미킨 가가쿠 가부시키가이샤 | Treating agent for inkjet substrate |
JP6123302B2 (en) * | 2013-01-15 | 2017-05-10 | 住友ベークライト株式会社 | Chemical amplification type negative photoresist resin composition, cured product and electronic device |
JP6303549B2 (en) * | 2013-02-19 | 2018-04-04 | Jsr株式会社 | Negative radiation sensitive resin composition, cured film for display element, method for forming cured film for display element, and display element |
KR101511476B1 (en) * | 2014-02-28 | 2015-04-10 | 스미또모 가가꾸 가부시키가이샤 | Photosensitive resin composition |
JP6565904B2 (en) | 2014-04-25 | 2019-08-28 | Agc株式会社 | Negative photosensitive resin composition, partition, optical element, and method for producing optical element |
JP6368558B2 (en) * | 2014-06-25 | 2018-08-01 | 東京応化工業株式会社 | Resist composition, resist pattern forming method, and polymer compound |
JP6425119B2 (en) * | 2014-08-05 | 2018-11-21 | Tianma Japan株式会社 | Device and method of manufacturing device |
JP6706891B2 (en) * | 2014-09-16 | 2020-06-10 | 住友化学株式会社 | Resist composition and method for producing resist pattern |
TWI566037B (en) * | 2015-04-17 | 2017-01-11 | 奇美實業股份有限公司 | Photosensitive resin composition and application thereof |
WO2017002545A1 (en) | 2015-06-30 | 2017-01-05 | 富士フイルム株式会社 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks having actinic ray-sensitive or radiation-sensitive film, method for forming pattern, and method for manufacturing electronic device |
EP3376286A1 (en) * | 2015-11-10 | 2018-09-19 | Asahi Glass Company, Limited | Photosensitive composition for biochip for fluorescence analysis, method for manufacturing biochip for fluorescence analysis, and biochip for fluorescence analysis |
KR102617582B1 (en) * | 2018-03-14 | 2023-12-27 | 도레이 카부시키가이샤 | Negative photosensitive coloring composition, cured film, touch panel using the same |
JP2019184716A (en) * | 2018-04-04 | 2019-10-24 | 東京応化工業株式会社 | Liquid-repellent treatment agent, and method of making body to be treated liquid-repellent with position selectivity |
CN108919605B (en) * | 2018-07-27 | 2021-12-21 | 京东方科技集团股份有限公司 | Photoresist composition, pixel defining layer, preparation method and application thereof |
CN109100915B (en) * | 2018-08-23 | 2021-12-14 | 合肥鑫晟光电科技有限公司 | Photoresist composition, pixel definition structure, manufacturing method of pixel definition structure and display panel |
KR20210097737A (en) | 2018-11-26 | 2021-08-09 | 샌트랄 글래스 컴퍼니 리미티드 | Photosensitive resin composition, manufacturing method of fluorinated resin cured product, fluorinated resin, fluorinated resin film, bank and display element |
WO2020111864A1 (en) * | 2018-11-30 | 2020-06-04 | 주식회사 엘지화학 | Optical laminate |
CN114790257B (en) * | 2022-04-25 | 2023-06-23 | 大连大学 | Polymer white light material based on coumarin and rare earth complex and preparation method thereof |
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JP2002244294A (en) * | 2001-02-20 | 2002-08-30 | Nippon Zeon Co Ltd | Resist composition and resist pattern forming method |
JP2003262959A (en) * | 2002-03-11 | 2003-09-19 | Fuji Photo Film Co Ltd | Negative resist composition |
JP2004277494A (en) * | 2003-03-13 | 2004-10-07 | Asahi Glass Co Ltd | Fluororesin and photosensitive resin composition |
JP4513965B2 (en) * | 2004-03-31 | 2010-07-28 | 日本ゼオン株式会社 | Radiation sensitive resin composition |
JP2005284208A (en) * | 2004-03-31 | 2005-10-13 | Nippon Zeon Co Ltd | Photosensitive resin composition and pattern forming method |
JP4415737B2 (en) * | 2004-04-08 | 2010-02-17 | 旭硝子株式会社 | Photosensitive resin composition and cured film thereof |
JP4466184B2 (en) * | 2004-04-27 | 2010-05-26 | 旭硝子株式会社 | Photosensitive resin composition and cured film thereof |
JP4474991B2 (en) * | 2004-04-27 | 2010-06-09 | 旭硝子株式会社 | Resist composition and coating film thereof |
TWI485517B (en) * | 2007-04-18 | 2015-05-21 | Daikin Ind Ltd | Repellent resist composition |
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JP2012108499A (en) | 2012-06-07 |
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