WO2012057058A1

WO2012057058A1 - Photosensitive resin composition, patterned structure, display device, and partition wall

Info

Publication number: WO2012057058A1
Application number: PCT/JP2011/074396
Authority: WO
Inventors: 優梶谷; 元彦村上; 雅之三木
Original assignee: 住友化学株式会社
Priority date: 2010-10-29
Filing date: 2011-10-24
Publication date: 2012-05-03
Also published as: JP2012108499A; TWI566046B; CN103189797A; KR20140007799A; TW201229670A

Abstract

Provided is a negative-working photosensitive resin composition which has excellent liquid repellent properties, heat resistance and solvent resistance, cannot be left as a residue on a part other than a part on which a pattern is to be formed, and can be used for forming a pattern. The negative-working photosensitive resin composition comprises an alkali-soluble resin (A), a fluorine-containing liquid repellent agent (B), a cross-linking agent (C) and an acid generator (D), wherein the fluorine-containing liquid repellent agent (B) is an addition polymer containing a structural unit derived from an unsaturated compound having a C_4-6 fluoroalkyl group and the fluorine-containing liquid repellent agent (B) is added in an amount of 0.01-1.0 wt% relative to the total solid content in the composition.

Description

Photosensitive resin composition, pattern structure, display device and partition

The present invention relates to a photosensitive resin composition, a pattern structure, a display device, and a partition wall.

In recent years, as a method for manufacturing a display device or the like, a color filter constituting a part of the device or the like, an ITO electrode of a liquid crystal display element, an organic electroluminescence element (hereinafter also referred to as “organic EL element”), a circuit. A method for producing a wiring board or the like by a coating type process such as an ink jet method has been reported. In such a coating process such as an ink jet method, a partition formed using a photosensitive resin composition is used.

For example, in a display device using an organic EL element, three types of organic EL elements are provided on a support substrate. That is, (1) a red organic EL element that emits red light, (2) a green organic EL element that emits green light, and (3) a blue organic EL element that emits blue light are provided on a support substrate. It has been. On the support substrate, partition walls for defining a pixel pattern are usually provided, and the three types of organic EL elements are aligned with the partitions defined by the partition walls (that is, regions surrounded by the partition walls). Are arranged.

Each organic EL element is formed by sequentially laminating a first electrode 2, an organic EL layer 4, and a second electrode 7 in a region 5 surrounded by a partition wall 3 (see FIG. 1).

A method for forming the organic EL layer 4 will be described with reference to FIG. First, the first electrode 2 and the partition 3 are formed on the support substrate 1. Next, an ink 6 made of a material that becomes the organic EL layer 4 and a solvent is supplied to the region 5 surrounded by the partition walls 3 (FIG. 2A). The supplied ink 6 is accommodated in a region 5 surrounded by the partition wall 3 (FIG. 2B), and the organic EL layer 4 is formed in the region 5 by evaporation of the solvent of the ink 6 (FIG. 2C). As an application process for supplying such ink 6, an inkjet method, a nozzle coating method, and the like have been proposed.

Here, the partition wall 3 defining the pixel pattern is formed by photolithography using a photosensitive resin composition. The partition 3 used in the coating-type process needs to reliably store and hold the ink 6 supplied in the region 5 surrounded by the partition, so-called liquid repellency so as not to wet and spread in unintended locations. It is required to have sex.

Examples of the photosensitive resin composition for forming the member exhibiting liquid repellency include a photosensitive resin containing a polymer obtained by polymerizing an α-substituted acrylate having a fluoroalkyl group having 4 to 6 carbon atoms. A composition is known (Patent Document 1).

JP 2008-287251 A

However, when a pattern structure such as the above-mentioned partition is formed using the conventionally proposed photosensitive resin composition, a partition having an appropriate liquid repellency is formed, and therefore, in a region surrounded by the partition. Although the supplied ink is stored and held, there is a problem in stability that the obtained pattern structure has low heat resistance. In addition, when a partition wall is patterned on a support substrate for forming an organic EL element, a residue of the photosensitive resin composition may remain in a portion other than the portion where the pattern is formed. Ink for forming may be repelled, and when a coating film is formed, there is a case where the film thickness is not always sufficiently uniform and a flat coating film cannot be formed.

Accordingly, an object of the present invention is to provide a negative photosensitive resin composition that is excellent in liquid repellency and heat resistance, does not leave the photosensitive resin composition as a residue in a portion other than the pattern forming portion, and can form a pattern. There is to do.

The present invention provides the following photosensitive resin composition, pattern structure, display device and partition.
[1] A negative photosensitive resin composition comprising an alkali-soluble resin (A), a fluorine-based liquid repellent (B), a crosslinking agent (C), and an acid generator (D),
The fluorine-based liquid repellent (B) is an addition polymer containing a structural unit derived from an unsaturated compound having a fluoroalkyl group having 4 to 6 carbon atoms, and the addition ratio of the fluorine-based liquid repellent (B) is a composition. A photosensitive resin composition having a total solid content of 0.01 to 1.0% by weight.
[2] The photosensitive resin composition according to [1], further comprising a solvent (E).
[3] The photosensitive resin composition according to [1] or [2], wherein the alkali-soluble resin (A) contains a phenol resin.
[4] The photosensitive composition according to any one of [1] to [3], wherein the alkali-soluble resin (A) includes a novolac resin.
[5] The fluorinated liquid repellent (B) is an addition polymer containing a structural unit derived from at least one selected from the group consisting of an unsaturated carboxylic acid and an unsaturated carboxylic acid anhydride. 4]. The photosensitive resin composition according to any one of [4].
[6] The fluorinated liquid repellent (B) is an addition polymer containing a structural unit derived from an unsaturated compound having a cyclic ether structure having 2 to 4 carbon atoms, according to any one of [1] to [5] The photosensitive resin composition as described.
[7] A pattern structure formed using the photosensitive resin composition according to any one of [1] to [6].
[8] A display device including the pattern structure according to [7].
[9] An inkjet partition including the pattern structure according to [7].

The present invention provides a negative photosensitive resin composition that is excellent in liquid repellency and heat resistance, does not leave a photosensitive resin composition as a residue in a portion other than a pattern forming portion, and can form a pattern. it can.

FIG. 1 is a cross-sectional view of an organic EL element in a display device. FIG. 2A is a diagram for explaining a method of forming an organic EL layer. FIG. 2B is a diagram for explaining a method of forming an organic EL layer. FIG. 2C is a diagram for explaining a method of forming the organic EL layer. FIG. 3A is a diagram for explaining a method of forming a partition wall. FIG. 3B is a diagram for explaining a method of forming a partition wall. FIG. 3C is a diagram for explaining a method of forming a partition wall. FIG. 3D is a diagram for explaining a method of forming a partition wall. FIG. 4A is a diagram for explaining a method of forming a partition wall. FIG. 4B is a diagram for explaining a method of forming a partition wall. FIG. 4C is a diagram for explaining a method of forming a partition wall. FIG. 4D is a diagram for explaining a method of forming a partition wall.

DESCRIPTION OF SYMBOLS 1 Support substrate 2 1st electrode 3 Partition 3a Partition 4 Organic EL layer 5 Area | region enclosed by partition 6 Ink 7 2nd electrode 10 Mask 11 Photosensitive resin composition

The photosensitive resin composition of the present invention is a negative photosensitive resin composition containing the following (A), (B), (C) and (D).
(A) Alkali-soluble resin (B) Fluorine-based liquid repellent (C) Crosslinker (D) Acid generator In this specification, unless otherwise specified, the compounds exemplified as each component are singly or in combination Can be used.

The fluorine-based liquid repellent (B) contained in the photosensitive resin composition of the present invention has an unsaturated compound having a fluoroalkyl group having 4 to 6 carbon atoms (for example, a fluoroalkyl group and a carbon-carbon double bond). An addition polymer containing a structural unit derived from an unsaturated compound), and its addition ratio is 0.01 to 1.0% by weight with respect to the total solid content in the photosensitive resin composition.

The fluorine-based liquid repellent (B) is a structural unit derived from, for example, an unsaturated compound (d) having a C 4-6 perfluoroalkyl group (hereinafter sometimes referred to as “unsaturated compound (d)”). It is a polymer containing.

Examples of the unsaturated compound (d) include compounds represented by the following formula (d-0).

[In the formula (d-0), R ^f represents a fluoroalkyl group having 4 to 6 carbon atoms.
R ^d represents a hydrogen atom, a halogen atom, a cyano group, a phenyl group, a benzyl group or an alkyl group having 1 to 21 carbon atoms, and the hydrogen atom contained in the alkyl group is substituted with a halogen atom or a hydroxy group. May be.

X ^d is a single bond, a divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms, a divalent alicyclic hydrocarbon group having 3 to 10 carbon atoms, or a divalent divalent hydrocarbon group having 6 to 12 carbon atoms. One or more —CH ₂ — represented by an aromatic hydrocarbon group and contained in the aliphatic hydrocarbon group and the alicyclic hydrocarbon group is —O—, —CO—, —COO—, —C ₆ H ₄ - (phenylene ^{group), - NR e -, -} S- or -SO ₂ - may be replaced by. ]

R ^f is preferably a perfluoroalkyl group having 4 to 6 carbon atoms. Examples thereof include a perfluorobutyl group and a perfluorohexyl group, and a perfluorobutyl group is preferred.

Examples of the halogen atom for R ^d include F, Cl, Br, and I.

Examples of the alkyl group having 1 to 21 carbon atoms in R ^d include, for example, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n- Linear alkyl groups such as octyl group, n-nonyl group, n-decyl group;
Isopropyl group, isobutyl group, sec-butyl group, isopentyl group, 1-methylpentyl group, 2-methylpentyl group, 3-methylpentyl group, 4-methylpentyl group, 1-ethylbutyl group, 2-ethylbutyl group, 1- Methylhexyl group, 2-methylhexyl group, 3-methylhexyl group, 4-methylhexyl group, 5-methylhexyl group, 1-ethylpentyl group, 2-ethylpentyl group, 3-ethylpentyl group, 1-propylbutyl Group, 1-methylheptyl group, 2-methylheptyl group, 3-methylheptyl group, 4-methylheptyl group, 5-methylheptyl group, 6-methylheptyl group, 1-ethylhexyl group, 2-ethylhexyl group, 3- Ethylhexyl group, 4-ethylhexyl group, 2-propylpentyl group, 1-butylbutyl group, 1-butyl- -Methylbutyl group, 1-butyl-3-methylbutyl group, tert-butyl group, 1,1-dimethylpropyl group, 1,1-dimethylbutyl group, 1,2-dimethylbutyl group, 1,3-dimethylbutyl group, 2,3-dimethylbutyl group, 1-ethyl-2-methylpropyl group, 1,1-dimethylpentyl group, 1,2-dimethylpentyl group, 1,3-dimethylpentyl group, 1,4-dimethylpentyl group, 2,2-dimethylpentyl group, 2,3-dimethylpentyl group, 2,4-dimethylpentyl group, 3,3-dimethylpentyl group, 3,4-dimethylpentyl group, 1-ethyl-1-methylbutyl group, 2 And branched chain alkyl groups such as -ethyl-3-methylbutyl group.

R ^d is preferably a hydrogen atom, a halogen atom or a methyl group.

Examples of the divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms in X ^d include methylene group, ethylene group, propane-1,3-diyl group, propane-1,2-diyl group, butane-1 , 4-diyl group, butane-1,3-diyl group, butane-1,2-diyl group, pentane-1,5-diyl group, hexane-1,6-diyl group, heptane-1,7-diyl group And alkanediyl groups such as octane-1,8-diyl group.

Examples of the divalent alicyclic hydrocarbon group having 3 to 10 carbon atoms in X ^d include, for example, cyclopropanediyl group, cyclobutanediyl group, cyclopentanediyl group, cyclohexanediyl group, cycloheptanediyl group, cyclodecandiyl group Groups and the like.

Examples of the divalent aromatic hydrocarbon group having 6 to 12 carbon atoms in ^Xd include a phenylene group and a naphthalenediyl group.

The R ^e, are exemplified aliphatic hydrocarbon group having 1 to 4 carbon atoms.

—CH ₂ — contained in the aliphatic hydrocarbon group and the alicyclic hydrocarbon group is —O—, —CO—, —COO—, —C ₆ H ₄ — (phenylene group), —NR ^e —, — Examples of X ^d replaced with S— or —SO ₂ — include groups represented by formulas (xd-1) to (xd-10).

X ^d is preferably an alkanediyl group having 1 to 6 carbon atoms, more preferably an ethylene group.

Examples of the compound represented by the formula (d-0) include compounds (d-1) to (d-94) shown in the following table. In the table, the formula number shown in the ^Xd column represents the formula number of the group exemplified above. For example, the compound (d-1) is a compound represented by the following formula (d-1).

The fluorine-based liquid repellent (B) is preferably a resin containing a structural unit derived from an unsaturated compound (d) and a structural unit derived from an unsaturated compound (a) described later. And a structural unit derived from an unsaturated compound (a) and a structural unit derived from an unsaturated compound (b) described later are more preferred. Since the fluorine-based liquid repellent (B) contains a structural unit derived from the unsaturated compound (a), the developability is excellent, and thus unevenness resulting from residues and development tends to be suppressed. When the fluorine-based liquid repellent (B) contains a structural unit derived from the unsaturated compound (b), the solvent resistance tends to be excellent. Moreover, the fluorine-type liquid repellent (B) may contain the structural unit derived from the unsaturated compound (c) mentioned later.

When the fluorine-based liquid repellent (B) is a copolymer of an unsaturated compound (a) and an unsaturated compound (d), the ratio of structural units derived from each monomer is such that the fluorine-based liquid repellent (B ) Is preferably within the following range with respect to the total of the structural units constituting:
Structural unit derived from unsaturated compound (a); 5 to 40% by weight (more preferably 10 to 30% by weight)
Structural unit derived from unsaturated compound (d); 60 to 95% by weight (more preferably 70 to 90% by weight)

When the fluorine-based liquid repellent (B) is a copolymer of an unsaturated compound (a), an unsaturated compound (b), and an unsaturated compound (d), the ratio of structural units derived from each monomer is The total number of moles of structural units constituting the fluorine-based liquid repellent (B) is preferably in the following range.
Structural unit derived from unsaturated compound (a); 5 to 40% by weight (more preferably 10 to 30% by weight)
Structural unit derived from unsaturated compound (b); 5 to 80% by weight (more preferably 10 to 70% by weight)
Structural unit derived from unsaturated compound (d); 10 to 80% by weight (more preferably 20 to 70% by weight)

When the fluorine-based liquid repellent (B) is a copolymer of an unsaturated compound (a), an unsaturated compound (b), an unsaturated compound (c), and an unsaturated compound (d), it is derived from each monomer. It is preferable that the ratio of the structural units to be in the following ranges with respect to the total number of moles of the structural units constituting the fluorine-based liquid repellent (B).
Structural unit derived from unsaturated compound (a); 5 to 40% by weight (more preferably 10 to 30% by weight)
Structural unit derived from unsaturated compound (b); 5 to 80% by weight (more preferably 10 to 70% by weight)
Structural unit derived from unsaturated compound (c); 10 to 50% by weight (more preferably 20 to 40% by weight)
Structural unit derived from unsaturated compound (d); 10 to 80% by weight (more preferably 20 to 70% by weight)

If the ratio of each structural unit is in the above range, the liquid repellency and developability tend to be excellent.

The polystyrene-reduced weight average molecular weight of the fluorine-based liquid repellent (B) is preferably 3,000 to 20,000, more preferably 5,000 to 15,000. When the weight average molecular weight of the fluorine-based liquid repellent (B) is in the above range, the coating property tends to be excellent, the film thickness of the exposed portion is less likely to occur during development, and the non-exposed portion is easily removed by development. .

The acid value of the fluorine-based liquid repellent (B) is 20 to 200 mgKOH / g, preferably 40 to 150 mgKOH / g.

The content of the fluorine-based liquid repellent (B) in the photosensitive resin composition is preferably 0.001 to 10 mass when the total weight of the alkali-soluble resin (A) and the crosslinking agent (C) is 100 parts by weight. Part, more preferably 0.01 to 5 parts by weight. When the content of the fluorine-based liquid repellent (B) is in the above range, there is a tendency that the developability is excellent in pattern formation and the liquid repellent property of the obtained pattern (upper surface) is excellent.

The unsaturated compound (a) is an unsaturated compound selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic acid anhydrides. Examples of the unsaturated compound (a) include unsaturated monocarboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, o-vinylbenzoic acid, m-vinylbenzoic acid, and p-vinylbenzoic acid;
Maleic acid, fumaric acid, citraconic acid, mesaconic acid, itaconic acid, 3-vinylphthalic acid, 4-vinylphthalic acid, 3,4,5,6-tetrahydrophthalic acid, 1,2,3,6-tetrahydrophthalic acid, dimethyl Unsaturated dicarboxylic acids such as tetrahydrophthalic acid, 1,4-cyclohexene dicarboxylic acid;
Methyl-5-norbornene-2,3-dicarboxylic acid, 5-carboxybicyclo [2.2.1] hept-2-ene, 5,6-dicarboxybicyclo [2.2.1] hept-2-ene, 5-carboxy-5-methylbicyclo [2.2.1] hept-2-ene, 5-carboxy-5-ethylbicyclo [2.2.1] hept-2-ene, 5-carboxy-6-methylbicyclo Bicyclounsaturated compounds containing a carboxy group such as [2.2.1] hept-2-ene, 5-carboxy-6-ethylbicyclo [2.2.1] hept-2-ene;
Maleic anhydride, citraconic anhydride, itaconic anhydride, 3-vinylphthalic anhydride, 4-vinylphthalic anhydride, 3,4,5,6-tetrahydrophthalic anhydride, 1,2,3,6- Unsaturated dicarboxylic acid anhydrides such as tetrahydrophthalic acid anhydride, dimethyltetrahydrophthalic acid anhydride, 5,6-dicarboxybicyclo [2.2.1] hept-2-ene anhydride (hymic acid anhydride);
Unsaturated mono [(meth) acryloyloxyalkyl] esters of polyvalent carboxylic acids such as succinic acid mono [2- (meth) acryloyloxyethyl] and phthalic acid mono [2- (meth) acryloyloxyethyl] ;
Examples thereof include unsaturated acrylates containing a hydroxy group and a carboxy group in the same molecule, such as α- (hydroxymethyl) acrylic acid.

Of these, acrylic acid, methacrylic acid, maleic anhydride and the like are preferably used from the viewpoint of copolymerization reactivity and alkali solubility.

In this specification, “(meth) acrylic acid” represents at least one selected from the group consisting of acrylic acid and methacrylic acid. Notations such as “(meth) acryloyl” and “(meth) acrylate” have the same meaning.

The unsaturated compound (b) is an unsaturated compound having a cyclic ether having 2 to 4 carbon atoms (for example, at least one selected from the group consisting of an oxirane ring, an oxetane ring and a tetrahydrofuran ring (oxolane ring)), A monomer having a cyclic ether having 2 to 4 carbon atoms and an ethylenically unsaturated double bond is preferable, and a monomer having a cyclic ether having 2 to 4 carbon atoms and a (meth) acryloyloxy group is more preferable. preferable.

Examples of the unsaturated compound (b) include an unsaturated compound (b1) having an oxiranyl group (hereinafter sometimes referred to as “unsaturated compound (b1)”), an unsaturated compound (b2) having an oxetanyl group (hereinafter referred to as “ Unsaturated compound (b2) ”) and unsaturated compound (b3) having a tetrahydrofuryl group (hereinafter, sometimes referred to as“ unsaturated compound (b3) ”).

Examples of the unsaturated compound (b1) include an unsaturated compound (b1-1) having a structure obtained by epoxidizing an alkene (hereinafter sometimes referred to as “unsaturated compound (b1-1)”), and a structure obtained by epoxidizing a cycloalkene. And an unsaturated compound (b1-2) (hereinafter sometimes referred to as “unsaturated compound (b1-2)”).

As the unsaturated compound (b1), a monomer having an oxiranyl group and a (meth) acryloyloxy group is preferable, and a monomer having a cycloalkene epoxidized structure and a (meth) acryloyloxy group is more preferable. . When these monomers are used, the storage stability of the photosensitive resin composition is excellent.

Examples of the unsaturated compound (b1-1) include glycidyl (meth) acrylate, β-methylglycidyl (meth) acrylate, β-ethylglycidyl (meth) acrylate, glycidyl vinyl ether, o-vinylbenzyl glycidyl ether, m-vinyl. Benzyl glycidyl ether, p-vinylbenzyl glycidyl ether, α-methyl-o-vinylbenzyl glycidyl ether, α-methyl-m-vinylbenzyl glycidyl ether, α-methyl-p-vinylbenzyl glycidyl ether, 2,3-bis ( Glycidyloxymethyl) styrene, 2,4-bis (glycidyloxymethyl) styrene, 2,5-bis (glycidyloxymethyl) styrene, 2,6-bis (glycidyloxymethyl) styrene, 2,3,4-tris ( Glish Zircoxymethyl) styrene, 2,3,5-tris (glycidyloxymethyl) styrene, 2,3,6-tris (glycidyloxymethyl) styrene, 3,4,5-tris (glycidyloxymethyl) styrene, 2, Examples include 4,6-tris (glycidyloxymethyl) styrene and compounds described in JP-A-7-248625.

Examples of the unsaturated compound (b1-2) include vinylcyclohexene monooxide, 1,2-epoxy-4-vinylcyclohexane (eg, Celoxide 2000; manufactured by Daicel Chemical Industries, Ltd.), 3,4-epoxycyclohexylmethyl. Acrylate (for example, Cyclomer A400; manufactured by Daicel Chemical Industries, Ltd.), 3,4-epoxycyclohexylmethyl methacrylate (for example, Cyclomer M100; manufactured by Daicel Chemical Industries, Ltd.), represented by the formula (I) Examples thereof include compounds and compounds represented by the formula (II).

In the formula (I) and the formula (II), R ¹ and R ² each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and the alkyl group may be substituted with a hydroxy group Good.

X ¹ and X ² each independently represent a single bond, —R ³ —, * —R ³ —O—, * —R ³ —S—, * —R ³ —NH—.

R ³ represents an alkanediyl group having 1 to 6 carbon atoms.

* Represents a bond with O.

Examples of the alkyl group having 1 to 4 carbon atoms represented by R ¹ and R ² include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, and a tert-butyl group. Groups and the like.

Examples of the alkyl group having 1 to 4 carbon atoms substituted with a hydroxy group include a hydroxymethyl group, a 1-hydroxyethyl group, a 2-hydroxyethyl group, a 1-hydroxypropyl group, a 2-hydroxypropyl group, 3 -Hydroxypropyl group, 1-hydroxy-1-methylethyl group, 2-hydroxy-1-methylethyl group, 1-hydroxybutyl group, 2-hydroxybutyl group, 3-hydroxybutyl group, 4-hydroxybutyl group, etc. Can be mentioned.

R ¹ and R ² are preferably a hydrogen atom, a methyl group, a hydroxymethyl group, a 1-hydroxyethyl group, and a 2-hydroxyethyl group, and more preferably a hydrogen atom and a methyl group.

Examples of the alkanediyl group represented by R ³ include methylene group, ethylene group, propane-1,2-diyl group, propane-1,3-diyl group, butane-1,4-diyl group, pentane-1 , 5-diyl group, hexane-1,6-diyl group and the like.

X ¹ and X ² are preferably a single bond, methylene group, ethylene group, * —CH ₂ —O— group, * —CH ₂ CH ₂ —O— group, more preferably a single bond, * — CH ₂ CH ₂ —O— group may be mentioned, where * represents a bond with O.

Examples of the compound represented by the formula (I) include compounds represented by the formula (I-1) to the formula (I-15). Preferably formula (I-1), formula (I-3), formula (I-5), formula (I-7), formula (I-9), formula (I-11) to formula (I-15) Is mentioned. More preferred are formula (I-1), formula (I-7), formula (I-9), and formula (I-15).

Examples of the compound represented by the formula (II) include compounds represented by the formulas (II-1) to (II-15). Preferably Formula (II-1), Formula (II-3), Formula (II-5), Formula (II-7), Formula (II-9), Formula (II-11) to Formula (II-15) Is mentioned.
More preferable examples include formula (II-1), formula (II-7), formula (II-9), and formula (II-15).

The compound represented by the formula (I) and the compound represented by the formula (II) may be used alone. Moreover, you may mix and use them by arbitrary ratios. When mixing the compound of formula (I) and the compound of formula (II), they are preferably in the molar ratio of formula (I): formula (II), preferably 5:95 to 95: 5 More preferably, it is mixed at 10:90 to 90:10, particularly preferably 20:80 to 80:20.

As the unsaturated compound (b2), a monomer having an oxetanyl group and a (meth) acryloyloxy group is preferable. Examples of the unsaturated compound (b2) include 3-methyl-3- (meth) acryloyloxymethyl oxetane, 3-ethyl-3- (meth) acryloyloxymethyl oxetane, and 3-methyl-3- (meth) acryloyloxy. Examples thereof include ethyl oxetane and 3-ethyl-3- (meth) acryloyloxyethyl oxetane.

As the unsaturated compound (b3), a monomer having a tetrahydrofuryl group and a (meth) acryloyloxy group is preferable.

Examples of the unsaturated compound (b3) include tetrahydrofurfuryl acrylate (for example, Biscoat V # 150, manufactured by Osaka Organic Chemical Industry Co., Ltd.), tetrahydrofurfuryl methacrylate, and the like.

Examples of the unsaturated compound (c) include (meth) acrylic acid esters, N-substituted maleimides, unsaturated dicarboxylic acid diesters, alicyclic unsaturated compounds, styrenes, and other vinyl compounds. It is done.

Examples of (meth) acrylic acid esters include alkyl such as methyl (meth) acrylate, ethyl (meth) acrylate, n-butyl (meth) acrylate, sec-butyl (meth) acrylate, and tert-butyl (meth) acrylate. Esters;
Cyclohexyl (meth) acrylate, 2-methylcyclohexyl (meth) acrylate, tricyclo [5.2.1.0 ^2,6 ] decan-8-yl (meth) acrylate (in this technical field, dicyclopenta Cycloalkyl esters such as dicyclopentanyloxyethyl (meth) acrylate and isobornyl (meth) acrylate;
Hydroxyalkyl esters such as 2-hydroxyethyl (meth) acrylate and 2-hydroxypropyl (meth) acrylate;
Examples include aryl and aralkyl esters such as phenyl (meth) acrylate and benzyl (meth) acrylate.

Examples of unsaturated dicarboxylic acid diesters include diethyl maleate, diethyl fumarate, diethyl itaconate, and the like.

Examples of N-substituted maleimides include N-phenylmaleimide, N-cyclohexylmaleimide, N-benzylmaleimide, N-succinimidyl-3-maleimidobenzoate, N-succinimidyl-4-maleimidobutyrate, N-succinimidyl-6- Maleimide caproate, N-succinimidyl-3-maleimide propionate, N- (9-acridinyl) maleimide and the like can be mentioned.

Examples of the alicyclic unsaturated compounds include bicyclo [2.2.1] hept-2-ene, 5-methylbicyclo [2.2.1] hept-2-ene, and 5-ethylbicyclo [2. 2.1] Hept-2-ene, 5-hydroxybicyclo [2.2.1] hept-2-ene, 5-hydroxymethylbicyclo [2.2.1] hept-2-ene, 5- (2 ′ -Hydroxyethyl) bicyclo [2.2.1] hept-2-ene, 5-methoxybicyclo [2.2.1] hept-2-ene, 5-ethoxybicyclo [2.2.1] hept-2-ene Ene, 5,6-dihydroxybicyclo [2.2.1] hept-2-ene, 5,6-di (hydroxymethyl) bicyclo [2.2.1] hept-2-ene, 5,6-di ( 2'-hydroxyethyl) bicyclo [2.2.1] hept- -Ene, 5,6-dimethoxybicyclo [2.2.1] hept-2-ene, 5,6-diethoxybicyclo [2.2.1] hept-2-ene, 5-hydroxy-5-methylbicyclo [2.2.1] Hept-2-ene, 5-hydroxy-5-ethylbicyclo [2.2.1] hept-2-ene, 5-hydroxymethyl-5-methylbicyclo [2.2.1] Hept-2-ene, 5-tert-butoxycarbonylbicyclo [2.2.1] hept-2-ene, 5-cyclohexyloxycarbonylbicyclo [2.2.1] hept-2-ene, 5-phenoxycarbonylbicyclo [2.2.1] Hept-2-ene, 5,6-bis (tert-butoxycarbonyl) bicyclo [2.2.1] hept-2-ene, 5,6-bis (cyclohexyloxycarbonyl) ) Bicyclo [2.2.1] hept-2-ene bicyclo unsaturated compounds such as and the like.

Examples of styrenes include styrene, α-methyl styrene, m-methyl styrene, p-methyl styrene, vinyl toluene, and p-methoxy styrene.

Examples of other vinyl compounds include (meth) acrylonitrile, vinyl chloride, vinylidene chloride, (meth) acrylamide, vinyl acetate, 1,3-butadiene, isoprene, 2,3-dimethyl-1,3-butadiene and the like. It is done.

Examples of the unsaturated compound (c) include styrene, N-phenylmaleimide, N-cyclohexylmaleimide, N-benzylmaleimide, bicyclo [2.2.1] hept-2-ene, and the like. It is preferable from the viewpoint of solubility.

<Alkali-soluble resin (A)>
The photosensitive resin composition of this invention contains alkali-soluble resin (A). Any alkali-soluble resin (A) may be used as long as it has good coating properties and is compatible with other components.

The content of the alkali-soluble resin (A) when the total of the alkali-soluble resin (A), the crosslinking agent (C) and the acid generator (D) in the photosensitive resin composition of the present invention is 100% by weight is preferable. Is 60 to 98% by weight. When the content of the alkali-soluble resin (A) is in the above range, the developability of the photosensitive resin composition, the adhesion of the resulting pattern, the solvent resistance, and the mechanical properties tend to be good.

In view of the structure of the organic EL device, for example, it is necessary to pattern the photosensitive resin composition on a transparent electrode (ITO (tin-doped indium oxide), IZO (zinc-doped indium oxide: abbreviated IZO)).

Since the transparent electrode and the photosensitive resin composition have good adhesion, even if an alkali-soluble resin is used, after forming the pattern structure, a portion other than the pattern structure, for example, the periphery of the opening of the pattern structure The residue of the photosensitive resin composition may remain in the part.

When ink containing an organic EL material is applied to the opening of the pattern structure by an ink jet method or the like, the ink is repelled by the resin residue remaining at the periphery of the opening. When this “dewetting” is slight, the film thickness of the light emitting layer or the like may be uneven. For example, the thickness of the light emitting layer may be thinner at the peripheral portion than at the central portion of the opening. For this reason, the electric resistance of the peripheral part of a light emitting layer becomes low compared with a center part, when a voltage is applied to a light emitting layer, an electric current concentrates and flows through a peripheral part, and a center part becomes dark compared with a peripheral part. When unevenness occurs in the film thickness, light emission unevenness that may be caused by the difference in film thickness may occur. In particular, when “dewetting” is conspicuous, when a light emitting layer or the like is not formed on the periphery of the opening, and an electrode is formed on the light emitting layer as it is, current leakage occurs between the pair of electrodes, and the pixel A phenomenon may occur in which no current flows through the light emitting layer formed therein and no light is emitted.

As a result of intensive studies by the present inventor, in order to solve the above-mentioned problem, as the alkali-soluble resin (A), a vinyl phenol resin (hereinafter sometimes referred to as “polyvinyl phenol”) or a novolac resin is used. I found it preferable. In particular, the combined use of polyvinylphenol and novolac resin ensures adhesion between the pattern structure formed by patterning the photosensitive resin composition and the substrate (or electrode), and substantially in the region excluding the pattern structure. It has been found that there is no residue (residues are difficult to remain) and the heat-resistant temperature can be remarkably improved.

Examples of polyvinylphenol include vinylphenol homopolymers and copolymers of vinylphenol and monomers copolymerizable therewith.

Polyvinylphenol is 4-vinylphenol, 3-vinylphenol, 2-vinylphenol, 2-methyl-4-vinylphenol, vinylphenol such as 2,6-dimethyl-4-vinylphenol, or a combination of two or more. Then, it can be obtained by radical polymerization using a polymerization initiator such as azobisisobutyronitrile or benzoyl peroxide.

Details of vinylphenols and polyvinylphenols are described in Maruzen Petrochemical Co., Ltd. Research Institute, “Vinylphenol Basics and Applications” (published by Education Publishing Center). Examples of the monomer copolymerizable with vinylphenol include isopropenylphenol, acrylic acid, methacrylic acid, styrene, maleic anhydride, maleic imide, and vinyl acetate. Among these, a vinylphenol homopolymer is preferable, and a p-vinylphenol homopolymer is particularly preferable.

The average molecular weight of polyvinylphenol is a weight average molecular weight (Mw) in terms of monodisperse polystyrene measured by gel permeation chromatography (GPC), and is usually 3,000 to 20,000, preferably 4,000 to 15,000, More preferably, it is 5,000 to 10,000. If the weight average molecular weight of polyvinylphenol is too low, the molecular weight will not increase sufficiently even if a crosslinking reaction occurs in the exposed region, so that it will be easily dissolved in an alkaline developer, and the effect of improving heat resistance will be reduced. If the weight average molecular weight of polyvinylphenol is too large, the difference in solubility in the alkaline developer between the exposed area and the unexposed area becomes small, making it difficult to obtain a good resist pattern.

As the novolak resin, those widely used in the technical field of resist may be used. The novolak resin can be obtained, for example, by reacting phenols with aldehydes or ketones in the presence of an acidic catalyst (for example, oxalic acid).
Examples of phenols include phenol, o-cresol, m-cresol, p-cresol, 2,3-dimethylphenol, 2,5-dimethylphenol, 3,4-dimethylphenol, 3,5-dimethylphenol, 2 , 4-dimethylphenol, 2,6-dimethylphenol, 2,3,5-trimethylphenol, 2,3,6-trimethylphenol, 2-tert-butylphenol, 3-tert-butylphenol, 4-tert-butylphenol, 2 -Methylresorcinol, 4-methylresorcinol, 5-methylresorcinol, 4-tert-butylcatechol, 2-methoxyphenol, 3-methoxyphenol, 2-propylphenol, 3-propylphenol, 4-propylphenol, 2-isopropyl Phenol, 2-methoxy-5-methylphenol, 2-tert-butyl-5-methylphenol, thymol, and the like Isochimoru. These may be used alone or in combination of two or more.

Examples of aldehydes include formaldehyde, formalin, paraformaldehyde, trioxane, acetaldehyde, propylaldehyde, benzaldehyde, phenylacetaldehyde, α-phenylpropylaldehyde, β-phenylpropylaldehyde, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p- Hydroxybenzaldehyde, o-chlorobenzaldehyde, m-chlorobenzaldehyde, p-chlorobenzaldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde, p-methylbenzaldehyde, p-ethylbenzaldehyde, pn-butylbenzaldehyde, terephthalaldehyde, etc. It is done. Examples of ketones include acetone, methyl ethyl ketone, diethyl ketone, and diphenyl ketone. These may be used alone or in combination of two or more.

Among the above-mentioned, a novolak resin obtained by concomitant use of metacresol and paracresol and a condensation reaction of these with formaldehyde, formalin, or paraformaldehyde is particularly preferable from the viewpoint of resist sensitivity controllability. The charged weight ratio of metacresol to paracresol (metacresol: paracresol) is usually 80:20 to 20:80, preferably 70:30 to 50:50. Furthermore, it is also preferred to use 3,5-dimethylphenol (ie 3,5-xylenol). In this case, the charged weight ratio of cresols (total amount of metacresol and paracresol) to 3,5-xylenol (cresols: 3,5-xylenol) is usually 50:50 to 80:20, preferably 60:40 to 70:30. The average molecular weight of the novolak resin is a weight average molecular weight in terms of monodisperse polystyrene measured by GPC, and is usually 1,000 to 10,000, preferably 2,000 to 7,000, more preferably 2,500 to 6, 000. If the weight average molecular weight of the novolak resin is too low, the effect of increasing the molecular weight is small even when a crosslinking reaction occurs in the exposed area, and the novolak resin is easily dissolved in an alkali developer.

If the weight average molecular weight of the novolak resin is too high, the difference in solubility between the exposed area and the unexposed area in the alkaline developer becomes small, and it becomes difficult to obtain a good resist pattern. The weight average molecular weights of polyvinylphenol and novolac resin can be controlled within a desired range by adjusting the synthesis conditions. In addition, for example, (1) a method of pulverizing a resin obtained by synthesis and solid-liquid extraction with an organic solvent having an appropriate solubility, and (2) dissolving the resin obtained by synthesis in a good solvent, The weight average molecular weight can be controlled by, for example, dropping into a solvent or dropping a poor solvent into a solid-liquid or liquid-liquid extraction method.

The measurement of the weight average molecular weight by GPC is carried out under the following conditions using SC8020 (manufactured by TOSO) as a GPC measuring apparatus.

Column: A combination of one each of TSKGEL G3000HXL and G200HXL1000 manufactured by TOSO,
Temperature: 38 ° C
Solvent: tetrahydrofuran,
Flow rate: 1.0 ml / min,
Sample: 0.1 ml of a sample having a concentration of 0.05 to 0.6% by weight was injected.

The use ratio of polyvinylphenol and novolak resin is usually 30:70 to 95: 5, preferably 35:65 to 95: 5, more preferably 40:60 to 90:10, by weight ratio of polyvinylphenol to novolak resin. It is a range.

The greater the proportion of polyvinylphenol, the better the heat resistance of the resist pattern, but it becomes easier to peel off from the substrate. When the ratio of the novolac resin is increased, the problem of peeling the resist pattern from the substrate is solved, but the heat resistance is lowered. Therefore, when the ratio of both is in the above range, the balance between heat resistance and peeling resistance is improved.

The compound that generates an acid by actinic light is not particularly limited as long as it is a substance that generates a Bronsted acid or a Lewis acid when exposed to activating radiation, and includes an onium salt, a halogenated organic compound, a quinonediazide compound, α , Α′-bis (sulfonyl) diazomethane compounds, α-carbonyl-α′-sulfonyldiazomethane compounds, sulfone compounds, organic acid ester compounds, organic acid amide compounds, organic acid imide compounds, and the like can be used. . Among these, aromatic sulfonic acid esters, aromatic iodonium salts, aromatic sulfonium salts, aromatic compounds having a halogenated alkyl residue, and the like are preferable. These acid generators (D) are preferably selected from the viewpoint of spectral sensitivity in accordance with the wavelength of the light source that exposes the pattern.

Examples of onium salts include diazonium salts, ammonium salts, iodonium salts such as diphenyliodonium triflate, sulfonium salts such as triphenylsulfonium triflate, phosphonium salts, arsonium salts, and oxonium salts.
Examples of halogenated organic compounds include halogen-containing oxadiazole compounds, halogen-containing triazine compounds, halogen-containing acetophenone compounds, halogen-containing benzophenone compounds, halogen-containing sulfoxide compounds, halogen-containing sulfone compounds, and halogen-containing thiazoles. Compounds, halogen-containing oxazole compounds, halogen-containing triazole compounds, halogen-containing 2-pyrone compounds, other halogen-containing heterocyclic compounds, halogen-containing aliphatic hydrocarbon compounds, halogen-containing aromatic hydrocarbon compounds, sulfenyl halides Compound etc. are mentioned.

Specific examples of the halogenated organic compound include tris (2,3-dibromopropyl) phosphate, tris (2,3-dibromo-3-chloropropyl) phosphate, tetrabromochlorobutane, 2- [2- (3,4 -Dimethoxyphenyl) ethenyl] -4,6-bis (trichloroγmethyl) -S-triazine, hexachlorobenzene, hexabromobenzene, hexabromocyclododecane, hexabromocyclododecene, hexabromobiphenyl, allyltribromophenyl ether, Tetrachlorobisphenol A, tetrabromobisphenol A, bis (chloroethyl) ether of tetrachlorobisphenol A, bis (bromoethyl) ether of tetrabromobisphenol A, bis (2,3-dichloropropyl) of bisphenol A Ether, bis (2,3-dibromopropyl) ether of bisphenol A, bis (2,3-dichloropropyl) ether of tetrachlorobisphenol A, bis (2,3-dibromopropyl) ether of tetrabromobisphenol A, tetrachloro Bisphenol S, tetrabromobisphenol S, bis (chloroethyl) ether of tetrachlorobisphenol S, bis (bromoethyl) ether of tetrabromobisphenol S, bis (2,3-dichloropropyl) ether of bisphenol S, bis (2 , 3-dibromopropyl) ether, tris (2,3-dibromopropyl) isocyanurate, 2,2-bis (4-hydroxy-3,5-dibromophenyl) propane, 2,2-bis (4- (2- Hydroxye Halogen-based flame retardants such as toxi) -3,5-dibromophenyl) propane; dichlorodiphenyltrichloroethane, pentachlorophenol, 2,4,6-trichlorophenyl, 4-nitrophenyl ale, 2,4-dichlorophenyl, 3'- Methoxy-4'-nitrophenyl ether, 2,4-dichlorophenoxyacetic acid, 4,5,6,7-tetrachlorophthalide, 1,1-bis (4-chlorophenyl) ethanol, 1,1-bis (4- Chlorophenyl) -2,2,2-trichloroethanol, 2,4,4 ′, 5-tetrachlorodiphenyl sulfide, 2,4,4 ′, organic chloro-based agricultural chemicals such as 5-tetrachlorodiphenylsulfone; .

Specific examples of the quinonediazide compound include 1,2-benzoquinonediazide-4-sulfonic acid ester, 1,2-naphthoquinonediazide-4-sulfonic acid ester, 1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,1 Sulfonic acid esters of quinonediazide derivatives such as naphthoquinonediazide-4-sulfonic acid ester, 2,1-benzoquinonediazide-5-sulfonic acid ester; 1,2-benzoquinone-2-diazide-4-sulfonic acid chloride, 1, 2-naphthoquinone-2-diazide-4-sulfonic acid chloride, 1,2-naphthoquinone-2-diazide-5-sulfonic acid chloride, 1,2-naphthoquinone-1-diazide-6-sulfonic acid chloride, 1,2- Benzoquinone-1-diazide-5-sulfonic acid chloride Sulfonic acid chloride quinonediazide derivatives; and the like.

Specific examples of the α, α'-bis (sulfonyl) diazomethane-based compound include an α group having an unsubstituted, symmetrically or asymmetrically substituted alkyl group, alkenyl group, aralkyl group, aromatic group, or heterocyclic group. , Α′-bis (sulfonyl) diazomethane, and the like.

Specific examples of α-carbonyl-α'-sulfonyldiazomethane compounds include α- having an unsubstituted, symmetrically or asymmetrically substituted alkyl group, alkenyl group, aralkyl group, aromatic group, or heterocyclic group. And carbonyl-α'-sulfonyldiazomethane.

Specific examples of the sulfone compound include sulfone compounds and disulfone compounds having an unsubstituted, symmetrically or asymmetrically substituted alkyl group, alkenyl group, aralkyl group, aromatic group, or heterocyclic group.

Specific examples of organic acid esters include carboxylic acid esters, sulfonic acid esters, and phosphoric acid esters. Organic acid amides include carboxylic acid amides, sulfonic acid amides, phosphoric acid amides, and the like, and organic acid imides. Examples thereof include carboxylic acid imide, sulfonic acid imide, and phosphoric acid imide.

In addition, examples of the acid generator (D) include cyclohexylmethyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate, dicyclohexyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate, 2-oxocyclohexyl (2-norbornyl) sulfonium trifluoro. Lomethanesulfonate, 2-cyclohexylsulfonylcyclohexanone, dimethyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate, triphenylsulfonium trifluoromethanesulfonate, diphenyliodonium trifluoromethanesulfonate, N-hydroxysuccinimide trifluoromethanesulfonate, phenyl And paratoluenesulfonate.

The acid generator (D) is usually 0.1 to 10 parts by weight, preferably 0.3 to 8 parts by weight, more preferably 0.5 to 5 parts by weight with respect to 100 parts by weight of the alkali-soluble resin (A). Used at a rate of If the ratio of the acid generator (D) is too small or too large, the shape of the resist pattern may be deteriorated.

<Crosslinking agent (C)>
The cross-linking agent (C) is a compound (acid-sensitive substance) capable of cross-linking an alkali-soluble resin in the presence of an acid generated by actinic ray irradiation (exposure). Examples of such cross-linking agents include well-known acid-crosslinking compounds such as alkoxymethylated urea resins, alkoxymethylated melamine resins, alkoxymethylated uron resins, alkoxymethylated glycoluril resins, and alkoxymethylated amino resins. be able to. In addition, alkyl etherified melamine resin, benzoguanamine resin, alkyl etherified benzoguanamine resin, urea resin, alkyl etherified urea resin, urethane-formaldehyde resin, resol type phenol formaldehyde resin, alkyl etherified resole type phenol formaldehyde resin, epoxy resin, etc. Is mentioned.

Among these, alkoxymethylated amino resins are preferable, and specific examples thereof include methoxymethylated amino resins, ethoxymethylated amino resins, n-propoxymethylated amino resins, and n-butoxymethylated amino resins. it can. Among these, methoxymethylated amino resins such as hexamethoxymethylmelamine are particularly preferable in terms of good resolution. Commercially available alkoxymethylated amino resins include, for example, PL-1170, PL-1174, UFR65, CYMEL300, CYMEL303 (manufactured by Mitsui Cytec), BX-4000, Nicalac MW-30, MX290 (and above, Sanwa) Chemical) and the like.

These cross-linking agents may be used alone or in combination of two or more. The crosslinking agent (C) is usually used in a proportion of 0.5 to 60 parts by weight, preferably 1 to 50 parts by weight, more preferably 2 to 40 parts by weight with respect to 100 parts by weight of the alkali-soluble resin (A). The If the amount of the crosslinking agent used is too small, it will be difficult for the crosslinking reaction to proceed sufficiently, resulting in a decrease in the residual film ratio of the resist pattern after development using an alkali developer, deformation of the resist pattern such as swelling and meandering. Is likely to occur. If the amount of the crosslinking agent used is too large, the resolution may be lowered.

The photosensitive resin composition of the present invention may contain a solvent (E).
Examples of the solvent that can be used in the present invention include ester solvents (solvents containing —COO—), ether solvents other than ester solvents (solvents containing —O—), ether ester solvents (—COO— and —O— Solvent), ketone solvents other than ester solvents (solvents containing —CO—), alcohol solvents, aromatic hydrocarbon solvents, amide solvents, dimethyl sulfoxide, and the like.

Examples of the ester solvent include methyl lactate, ethyl lactate, butyl lactate, methyl 2-hydroxyisobutanoate, ethyl acetate, n-butyl acetate, isobutyl acetate, pentyl formate, isopentyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, Examples include butyl butyrate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, cyclohexanol acetate, and γ-butyrolactone.

Examples of ether solvents include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol mono Ethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, 3-methoxy-1-butanol, 3-methoxy-3-methylbutanol, tetrahydrofuran, tetrahydropyran, 1,4-dioxane, diethylene glycol dimethyl ether, diethylene glycol diethyl ether Le, diethylene glycol methyl ethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl ether, anisole, phenetole, and the like methyl anisole.

Examples of ether ester solvents include methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, 3 -Ethyl ethoxypropionate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, 2-methoxy-2-methylpropionic acid Methyl, ethyl 2-ethoxy-2-methylpropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, propylene glycol monomethyl ether acetate, propylene glycol mono Chill ether acetate, propylene glycol monopropyl ether acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate, and the like diethylene glycol monobutyl ether acetate.

Examples of ketone solvents include 4-hydroxy-4-methyl-2-pentanone, acetone, 2-butanone, 2-heptanone, 3-heptanone, 4-heptanone, 4-methyl-2-pentanone, cyclopentanone, and cyclohexanone. And isophorone.

Examples of the alcohol solvent include methanol, ethanol, propanol, butanol, hexanol, cyclohexanol, ethylene glycol, propylene glycol, and glycerin.

Examples of the aromatic hydrocarbon solvent include benzene, toluene, xylene, mesitylene and the like.

Examples of the amide solvent include N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone and the like.

These solvents may be used alone or in combination of two or more.

Of the above solvents, organic solvents having a boiling point of 120 ° C. or more and 180 ° C. or less at 1 atm are preferable from the viewpoints of coating properties and drying properties. Of these, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl 3-ethoxypropionate, diethylene glycol methyl ethyl ether, 3-methoxybutyl acetate, 3-methoxy-1-butanol and the like are preferable. When the solvent is any of these solvents, unevenness during coating can be suppressed and the flatness of the coating film can be improved.

The content of the solvent (E) in the photosensitive resin composition is preferably 60 to 95% by weight, more preferably 70 to 90% by weight, based on the total amount of components contained in the photosensitive resin composition. is there. In other words, the solid content of the photosensitive resin composition is preferably 5 to 40% by weight, more preferably 10 to 30% by weight. When the content of the solvent is in the above range, the flatness of the film formed by applying the photosensitive resin composition tends to be high. Here, solid content means the component remove | excluding the solvent from the photosensitive resin composition.

In the photosensitive resin composition of the present invention, a compound that absorbs actinic rays (hereinafter sometimes referred to as “light absorber (H)”) may be added as necessary.

When a compound that absorbs actinic rays is contained in the photosensitive resin composition, it absorbs light that travels in the depth direction of the resist film during exposure, so that the cross section changes from a forward tapered shape to a reverse tapered shape or an overhanging shape. A resist pattern can be obtained. Note that the shape of the resist pattern is also affected by reflection of the exposed light by the substrate or an ITO film formed on the substrate. Therefore, the light absorbent (H) is also required for preventing reflection of exposure light. In particular, the photosensitive resin composition using the combination of the acid generator (D) and the crosslinking agent (C) is a crosslinked chemical amplification resist, and the acid generated by light irradiation diffuses in the resist film, Since the cross-linking reaction occurs even in a region not exposed to light, the shape of the resist pattern can be controlled by the presence of a light absorber (H) that absorbs actinic rays.

As the light absorber (H), a compound having an absorption region in the wavelength region may be selected according to the wavelength of the exposure light source. However, when the light absorber (H) is a compound having low solubility in an alkali developer, the light absorber (H) tends to remain on the substrate after development, so that a phenolic hydroxyl group, a carboxy group, A compound imparted with an acidic residue such as a sulfonyl group and having increased solubility in an alkaline developer is preferred. For the purpose of solving the problem of residue generation, it is preferable to select a compound having higher absorbance so that sufficient absorbance can be obtained with a small addition amount. When the formed resist pattern is exposed to a high temperature in post-exposure baking (PEB) or sputtering process, the light absorber (H) may sublimate and contaminate the device. Is preferably a compound with low sublimability.

As the light absorber (H) used in the present invention, a so-called azo dye is preferable. Examples of the azo dye include azobenzene derivatives, azonaphthalene derivatives, azobenzene or azonaphthalene substituted arylpyrrolidone, and heterocyclic arylazo compounds such as pyrazolone, benzpyrazolone, pyrazole, imidazole, and thiazole.
In these arylazo compounds, the length of the conjugated system, the type of substituent, and the like can be appropriately selected in order to set the absorption wavelength in a desired region. For example, by substituting with an electron-withdrawing group such as a sulfonic acid (metal salt) group, a sulfonic acid ester group, a sulfone group, a carboxy group, a cyano group, a (substituted) aryl or an alkylcarbonyl group, and a halogen, an absorption region in a short wavelength Can be used as an arylazo compound. Further, by substituting with an electron donating group such as amino group, hydroxy group, alkoxy group or aryloxy group substituted with (substituted) alkyl, (substituted) aryl or polyoxyalkylene, the absorption wavelength is in the long wavelength region. It can also be set as the arylazo compound set to (1). Since the substituent includes a group that lowers the solubility in an alkali developer such as an amino group and a group that increases the solubility in an alkali developer such as a carboxy group or a hydroxy group, the photosensitive resin of the present invention. It is desirable to appropriately select the type of substituent of the arylazo compound so that the sensitivity of the composition is at a practical level.

In the case of an azo dye, various compounds that absorb active light in a wide wavelength region of 200 to 500 nm can be used by selecting the structure of the compound and the type of substituent. The selection of the length of the conjugated system and the substituent is applicable to compounds other than the azo dye. As a compound mainly corresponding to a light source in a wavelength region of 300 to 400 nm, a styrene derivative obtained by condensing (substituted) benzaldehyde and a compound having an active methylene group can be mentioned. Examples of the substituent of benzaldehyde include a hydroxy group, an alkoxy group, or an alkylamino group substituted with a halogen atom, a polyoxyalkyleneamino group, a hydroxy group, a halogen atom, an alkyl group, an alkoxy group, an alkylcarbonyl group, or an arylcarbonyl group. Etc.
Examples of the compound having an active methylene group include 1,3-diketones such as acetonitrile, α-cyanoacetate, α-cyanoketone, malonate, acetoacetate, and the like.

In addition, as a light absorber (H), methine dyes obtained by condensing aryl pyrazolone and aryl aldehyde, aryl benzotriazoles, azomethine dyes obtained as a condensate of amine and aldehyde, curcumin, xanthone, etc. A compound or the like can also be used. The development characteristics may be adjusted by using a compound that absorbs exposure light and simultaneously changes the solubility in an alkali developer or crosslinks, such as a quinonediazide sulfonate esterified dye of an arylhydroxy group or a bisazide compound.

Further, examples of the light absorber (H) include cyanovinylstyrene compounds, 1-cyano-2- (4-dialkylaminophenyl) ethylenes, p- (halogen-substituted phenylazo) -dialkylaminobenzenes, 1-alkoxy. -4- (4'-N, N-dialkylaminophenylazo) benzenes, dialkylamino compounds, 1,2-dicyanoethylene, 9-cyanoanthracene, 9-anthrylmethylenemalononitrile, N-ethyl-3-carba Zolylmethylenemalononitrile, 2- (3,3-dicyano-2-propenylidene) -3-methyl-1,3-thiazoline and the like can be used.

Among the commercially available dyes, those useful as light absorbers (H) include, for example, oil yellow # 101, oil yellow # 103, oil yellow # 117, oil pink # 312, oil green BG, and oil blue BOS. Oil Blue # 603, Oil Black BY, Oil Black BS, Oil Black T-505 (manufactured by Orient Chemical Co., Ltd.), Crystal Violet (C.I. 42555), Methyl Violet (C.I. 42535), Rhodamine B (C.I. 45170B), malachite green (C.I. 42000), methylene blue (C.I. 52015) and the like.
Examples of the 1-cyano-2- (4-dialkylaminophenyl) ethylenes include 1-carboxy-1-cyano-2- (4-di-n-hexylaminophenyl) ethylene and 1-carboxy-1-cyano. 1-cyano having a carboxyl group at the 1-position, such as -2- (4-di-n-butylaminophenyl) ethylene, 1-carboxy-1-cyano-2- (4-di-n-heptylaminophenyl) ethylene Examples include -2- (4-dialkylaminophenyl) ethylenes.

These 1-cyano-2- (4-dialkylaminophenyl) ethylenes, oil yellow # 101, oil yellow # 103, oil yellow # 107, etc. are particularly excellent in that they are excellent in forming a reverse taper resist pattern profile. preferable. The reverse tapered shape means a shape in which the cross-sectional shape of the pattern structure formed by patterning the photosensitive resin composition becomes wider as it is separated from the substrate. In the case of forming a resist pattern having a cross-section having an inverse taper shape or an overhang shape, the amount of the light absorbent (H) used is appropriately determined depending on the film thickness of the photosensitive resin composition, the type of the light absorbent (H), and the like. In general, when the film thickness is thick, it is difficult to transmit light, so it may be relatively small. When the film thickness is thin, it is relatively large. The light absorber (H) is usually used in a proportion of 0.1 to 15 parts by weight, preferably 0.5 to 10 parts by weight, particularly preferably 1 to 8 parts by weight, based on 100 parts by weight of the alkali-soluble resin. . In the case of forming a resist pattern having a forward tapered cross section, the amount of the light absorber (H) used is small compared to the case of forming a reverse tapered or overhanged resist pattern, and an alkali-soluble resin (A ) Used at a ratio of unused (0) to less than 0.1 parts by weight per 100 parts by weight.

The photosensitive resin composition of the present invention may contain a surfactant (F). Examples of the surfactant (F) include silicone surfactants, fluorine surfactants, silicone surfactants having fluorine atoms, and the like. However, the surfactant (F) is mainly composed of a compound having a structure different from that of the fluorine-based liquid repellent (B).

Examples of the silicone-based surfactant include surfactants having a siloxane bond. For example, Toray Silicone DC3PA, SH7PA, DC11PA, SH21PA, SH28PA, SH29PA, SH30PA, polyether-modified silicone oil SH8400 ( (Product name: Toray Dow Corning Co., Ltd.), KP321, KP322, KP323, KP324, KP326, KP340, KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), TSF400, TSF401, TSF410, TSF4300, TSF4445, TSF4445, TSF- 4446, TSF4452, TSF4460 (made by Momentive Performance Materials Japan GK), etc. are mentioned.

Examples of the fluorosurfactant include surfactants having a fluorocarbon chain. For example, Fluorinert (registered trademark) FC430, FC431 (manufactured by Sumitomo 3M Limited), Megafac (registered trademark) F142D, F171, F172, F173, F177, F183, F183, R30 (manufactured by DIC Corporation), EFTOP (registered trademark) EF301, EF303, EF351, EF352 (manufactured by Mitsubishi Materials Electronic Chemicals), Surflon (Registered Trademark) S381, S382, SC101, SC105 (Asahi Glass Co., Ltd.), E5844 (Daikin Fine Chemical Laboratory Co., Ltd.) and the like.

Examples of the silicone-based surfactant having a fluorine atom include surfactants having a siloxane bond and a fluorocarbon chain. For example, Megafac (registered trademark) R08, same BL20, same F475, same F477, same F443 (DIC ( Etc.). Preferably, MegaFac (registered trademark) F475 is used.

The content of the surfactant (F) is 0.001 wt% or more and 0.2 wt% or less, preferably 0.002 wt% or more, based on the total amount of components contained in the photosensitive resin composition. It is 0.1% by weight or less, more preferably 0.01% by weight or more and 0.05% by weight or less. By containing the surfactant (F) in this range, the flatness of the coating film can be improved.

In the photosensitive resin composition of the present invention, various additives such as fillers, other polymer compounds, adhesion promoters, antioxidants, ultraviolet absorbers, light stabilizers, chain transfer agents, etc., are optionally added. May be used in combination.

The photosensitive resin composition of the present invention does not substantially contain colorants such as pigments and dyes. That is, in the photosensitive resin composition of the present invention, the content of the colorant relative to the whole composition is, for example, preferably less than 1% by weight, more preferably less than 0.5% by weight.

The photosensitive resin composition of the present invention preferably has an average transmittance when the transmittance is measured under conditions of a measurement wavelength of 400 to 700 nm using a spectrophotometer packed in a quartz cell having an optical path length of 1 cm. Is 70% or more, more preferably 80% or more.

When the photosensitive resin composition of the present invention is formed into a coating film, the average transmittance of the coating film is preferably 90% or more, and more preferably 95% or more. This average transmittance is obtained by applying a coating film having a thickness of 3 μm after heat curing (for example, curing at 100 to 250 ° C. for 5 minutes to 3 hours) using a spectrophotometer to measure a wavelength of 400 to 700 nm. It is an average value when measured under conditions. Thereby, the coating film excellent in transparency in the visible light region can be provided.

The photosensitive resin composition of the present invention is, for example, on a substrate such as a substrate such as glass, metal or plastic, a color filter, various insulating or conductive films, a drive circuit, etc., as described later. It can form as a coating film by apply | coating to. The coating film is preferably dried and cured. Moreover, the obtained coating film can be patterned into a desired shape and used as a pattern structure. Furthermore, these coating films or pattern structures may be formed and used as a part of components such as a display device. *

First, the photosensitive resin composition of this invention is apply | coated on a base material.
The coating can be performed using various coating apparatuses such as a spin coater, a slit & spin coater, a slit coater, an ink jet, a roll coater, and a dip coater.

Next, it is preferable to remove volatile components such as a solvent by drying or pre-baking. Thereby, a smooth uncured coating film can be obtained.

The film thickness of the coating film in this case is not particularly limited, and can be appropriately adjusted depending on the material used, the use, etc., and is, for example, about 1 to 6 μm.

Further, the obtained uncured coating film is irradiated with light, for example, ultraviolet rays generated from a mercury lamp or a light emitting diode through a photomask for forming a target pattern. The shape of the photomask at this time is not particularly limited, and the shape and size may be selected according to the application of the pattern.

In recent exposure machines, light of less than 350 nm is cut using a filter that cuts this wavelength range, or light near 436 nm, 408 nm, and 365 nm is used using a bandpass filter that extracts these wavelength ranges. It is possible to selectively take out and irradiate substantially parallel rays uniformly over the entire exposed surface. If an apparatus such as a mask aligner or a stepper is used, accurate alignment between the mask and the substrate can be performed at this time.

The desired pattern shape can be obtained by bringing the exposed coating film into contact with a developer to dissolve a predetermined portion, for example, a non-exposed portion, and developing.

The developing method may be any of a liquid filling method, a dipping method, a spray method, and the like. Further, the substrate may be inclined at an arbitrary angle during development.

The developer used for development is preferably an aqueous solution of a basic compound. The basic compound may be either an inorganic or organic basic compound.

Specific examples of inorganic basic compounds include sodium hydroxide, potassium hydroxide, disodium hydrogen phosphate, sodium dihydrogen phosphate, diammonium hydrogen phosphate, ammonium dihydrogen phosphate, potassium dihydrogen phosphate, sodium silicate, silicic acid. Examples include potassium, sodium carbonate, potassium carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate, sodium borate, potassium borate, and ammonia.

Examples of organic basic compounds include tetramethylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide, monomethylamine, dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine, and ethanolamine. Is mentioned.

The concentration of these inorganic and organic basic compounds in the aqueous solution is preferably 0.01 to 10% by mass, more preferably 0.03 to 5% by mass.

The developer may contain a surfactant.
The surfactant may be any of a nonionic surfactant, an anionic surfactant, or a cationic surfactant.

Nonionic surfactants include, for example, polyoxyethylene alkyl ether, polyoxyethylene aryl ether, polyoxyethylene alkyl aryl ether, other polyoxyethylene derivatives, oxyethylene / oxypropylene block copolymers, sorbitan fatty acid esters, polyoxyethylene Examples include ethylene sorbitan fatty acid ester, polyoxyethylene sorbitol fatty acid ester, glycerin fatty acid ester, polyoxyethylene fatty acid ester, and polyoxyethylene alkylamine.

Examples of the anionic surfactant include higher alcohol sulfates such as sodium lauryl alcohol sulfate and sodium oleyl alcohol sulfate, alkyl sulfates such as sodium lauryl sulfate and ammonium lauryl sulfate, sodium dodecylbenzenesulfonate and dodecyl sulfate. And alkylaryl sulfonates such as sodium naphthalene sulfonate.

Examples of the cationic surfactant include amine salts such as stearylamine hydrochloride and lauryltrimethylammonium chloride, and quaternary ammonium salts.

The concentration of the surfactant in the alkali developer is preferably in the range of 0.01 to 10% by weight, more preferably 0.05 to 8% by weight, and more preferably 0.1 to 5% by weight.

After development, patterning can be obtained by patterning by washing with water. Furthermore, you may post-bake as needed. The post-baking is preferably performed at a temperature range of 150 to 240 ° C. for 10 to 180 minutes, for example.

When exposing an uncured coating film, it is possible to obtain a coating film having no pattern by irradiating the entire surface with light and / or omitting development without using a photomask on which a pattern is formed. it can.

In this way, the pattern structure obtained from the photosensitive resin composition of the present invention has high heat resistance and liquid repellency, and there is no residue (or very little) other than the pattern formation part. It is useful as a partition used for producing a color filter, an ITO electrode of a liquid crystal display element, an organic EL display element, a circuit wiring board, and the like by a coating type process such as an inkjet method. In particular, the photosensitive resin composition of the present invention is suitably used as a partition for producing an organic EL device from the above characteristics.

A partition formation process for forming a partition provided for forming an organic EL element on a support substrate using the photosensitive resin composition will be described with reference to FIG. Note that the tapered shape of the partition walls illustrated in FIG. 3 is an example, and does not necessarily have the illustrated shape, as long as the organic EL layer can be formed into a uniform and flat coating film.

First, the support substrate 1 on which the first electrode 2 is formed is prepared (FIG. 3A). Next, the photosensitive resin composition 11 is formed on the support substrate 1 by a coating process and pre-baked (FIG. 3B). Then, light is selectively irradiated only to the part which should form a partition with respect to the formed photosensitive resin composition through the mask 10 (FIG. 3C). Furthermore, the partition 3 is formed by developing and post-baking (FIG. 3D).

The partition 3 is not limited to a single configuration, and for example, a partition 3a may be further formed on the partition 3 shown in FIG. 3 (see FIGS. 4A to 4D). The overlapped partition walls 3 and 3a may be formed using the same photosensitive resin composition, or may be formed using different photosensitive resin compositions. Note that the tapered shape of the partition walls illustrated in FIGS. 4A to 4D is an example, and does not necessarily have to be the illustrated shape, as long as the organic EL layer can be formed into a uniform and flat film thickness.
Therefore, the laminated partition walls may have the same or different shapes.

When the barrier ribs are formed in such a manner, for example, on the support substrate obtained in FIG. 3D, a photosensitive resin composition is further applied and formed, pre-baked (FIG. 4B), and exposed (FIG. 4C). ), Development, and post-baking to form the partition 3a (FIG. 4D).

Next, the configuration of an organic EL element used as an organic EL display device will be described as an example.

<Configuration of organic EL element>
The organic EL element has at least one light emitting layer as an organic EL layer, and examples of the organic EL layer include a hole injection layer, a hole transport layer, an electron block layer, a hole block layer, an electron transport layer, and an electron. An injection layer or the like may be included.

An example of the layer structure that the organic EL element can take is shown below.
a) anode / light emitting layer / cathode b) anode / hole injection layer / light emitting layer / cathode c) anode / hole injection layer / light emitting layer / electron injection layer / cathode d) anode / hole injection layer / light emitting layer / Electron transport layer / cathode e) anode / hole injection layer / light emitting layer / electron transport layer / electron injection layer / cathode f) anode / hole transport layer / light emitting layer / cathode g) anode / hole transport layer / light emitting layer / Electron injection layer / cathode h) anode / hole transport layer / light emitting layer / electron transport layer / cathode i) anode / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode j) anode / hole Injection layer / hole transport layer / light emitting layer / cathode k) anode / hole injection layer / hole transport layer / light emitting layer / electron injection layer / cathode l) anode / hole injection layer / hole transport layer / light emitting layer / Electron transport layer / cathode m) anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode n) anode / light emitting layer / electron injection layer / cathode o) anode / Photo layer / electron transport layer / cathode p) anode / light emitting layer / electron transport layer / electron injection layer / cathode (where the symbol “/” indicates that the layers sandwiching the symbol “/” are stacked adjacent to each other) The same shall apply hereinafter.)
The first electrode functioning as an anode may be disposed closer to the support substrate than the second electrode, or the first electrode functioning as a cathode may be disposed closer to the support substrate than the second electrode. Good.

<Support substrate>
As the support substrate, one that is not chemically changed in the process of manufacturing the organic EL element is suitably used. For example, glass, plastic, a polymer film, a silicon plate, and a laminate of these are used.

<Anode>
In the case of an organic EL element having a configuration in which light emitted from the light emitting layer is emitted to the outside through the anode, an electrode exhibiting optical transparency is used for the anode. As the electrode exhibiting light transmittance, a thin film of metal oxide, metal sulfide, metal or the like can be used, and an electrode having high electrical conductivity and light transmittance is preferably used. Specifically, a thin film made of indium oxide, zinc oxide, tin oxide, ITO, indium zinc oxide (abbreviated as IZO), gold, platinum, silver, copper, or the like is used as the anode. Among these, a thin film made of ITO, IZO, or tin oxide is preferably used. Examples of a method for producing the anode include a vacuum deposition method, a sputtering method, an ion plating method, and a plating method. Further, an organic transparent conductive film such as polyaniline or a derivative thereof, polythiophene or a derivative thereof may be used as the anode.

<Cathode>
A material for the cathode is preferably a material having a low work function, easy electron injection into the light emitting layer, and high electrical conductivity. Further, in the organic EL element configured to extract light from the anode side, the material of the cathode is preferably a material having high reflectivity with respect to visible light in order to reflect the light emitted from the light emitting layer to the anode side by the cathode. As the cathode, for example, an alkali metal, an alkaline earth metal, a transition metal, a group 13 metal of the periodic table, or the like can be used. Examples of cathode materials include lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, and ytterbium. Metal; two or more alloys of the metals; one or more of the metals and one or more of gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten, tin Alloys; or graphite or graphite intercalation compounds are used. Examples of alloys include magnesium-silver alloys, magnesium-indium alloys, magnesium-aluminum alloys, indium-silver alloys, lithium-aluminum alloys, lithium-magnesium alloys, lithium-indium alloys, calcium-aluminum alloys, and the like. it can. As the cathode, a transparent conductive electrode made of a conductive metal oxide or a conductive organic material can be used. Specifically, examples of the conductive metal oxide include indium oxide, zinc oxide, tin oxide, ITO, and IZO, and examples of the conductive organic substance include polyaniline or a derivative thereof, polythiophene or a derivative thereof, and the like. The cathode may be composed of a laminate in which two or more layers are laminated. The electron injection layer may be used as the cathode.

Examples of the method for producing the cathode include a vacuum deposition method and an ion plating method.

The film thickness of the anode or cathode is appropriately set in consideration of the required characteristics and the simplicity of the film forming process, and is, for example, 10 nm to 10 μm, preferably 20 nm to 1 μm, and more preferably 50 nm to 500 nm. . Of the anode and the cathode, the electrode corresponding to the second electrode is thicker than the distance in the thickness direction of the support substrate between the interface of the second electrode and the organic EL layer and the top surface of the partition wall. You may form so that it may become.

<Hole injection layer>
Examples of the hole injection material constituting the hole injection layer include oxides such as vanadium oxide, molybdenum oxide, ruthenium oxide, and aluminum oxide, phenylamine compounds, starburst amine compounds, phthalocyanines, and amorphous Examples thereof include carbon, polyaniline, and polythiophene derivatives.

Examples of the method for forming the hole injection layer include film formation from a solution containing a hole injection material. For example, a hole injection layer can be formed by coating a film containing a hole injection material by a predetermined coating method and solidifying the solution.

The film thickness of the hole injection layer is appropriately set in consideration of required characteristics and process simplicity, and is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.

<Hole transport layer>
Examples of the hole transport material constituting the hole transport layer include polyvinyl carbazole or a derivative thereof, polysilane or a derivative thereof, a polysiloxane derivative having an aromatic amine in a side chain or a main chain, a pyrazoline derivative, an arylamine derivative, a stilbene. Derivative, triphenyldiamine derivative, polyaniline or derivative thereof, polythiophene or derivative thereof, polyarylamine or derivative thereof, polypyrrole or derivative thereof, poly (p-phenylene vinylene) or derivative thereof, or poly (2,5-thienylene vinylene) ) Or a derivative thereof.

The film thickness of the hole transport layer is set in consideration of the required characteristics and the simplicity of the film forming process, and is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, more preferably 5 nm to 200 nm. .

<Light emitting layer>
The light emitting layer is usually formed of an organic substance that mainly emits fluorescence and / or phosphorescence, or an organic substance and a dopant that assists the organic substance. The dopant is added, for example, in order to improve the luminous efficiency and change the emission wavelength. In addition, the organic substance which comprises a light emitting layer may be a low molecular compound or a high molecular compound, and when forming a light emitting layer by a coating type process, it is preferable that a light emitting layer contains a high molecular compound. The number average molecular weight in terms of polystyrene of the polymer compound constituting the light emitting layer is, for example, about 10 ³ to 10 ⁸ . Examples of the light emitting material constituting the light emitting layer include the following dye materials, metal complex materials, polymer materials, and dopant materials.

(Dye material)
Examples of dye-based materials include cyclopentamine derivatives, tetraphenylbutadiene derivative compounds, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, pyrrole derivatives, thiophene ring compounds. Pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, pyrazoline dimers, quinacridone derivatives, coumarin derivatives, and the like.

(Metal complex materials)
Examples of the metal complex material include rare earth metals such as Tb, Eu, and Dy, or Al, Zn, Be, Ir, Pt, etc. as a central metal, and oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, quinoline. Examples include metal complexes having a structure as a ligand, such as metal complexes having light emission from triplet excited states such as iridium complexes and platinum complexes, aluminum quinolinol complexes, benzoquinolinol beryllium complexes, and benzoxazolyl zinc. A complex, a benzothiazole zinc complex, an azomethylzinc complex, a porphyrin zinc complex, a phenanthroline europium complex, and the like can be given.

(Polymer material)
Examples of the polymer material include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyfluorene derivatives, polyvinyl carbazole derivatives, and the above-described dye materials and metal complex light emitting materials. Can be mentioned.

The thickness of the light emitting layer is usually about 2 nm to 200 nm.

<Electron transport layer>
As the electron transport material constituting the electron transport layer, known materials can be used, such as oxadiazole derivatives, anthraquinodimethane or derivatives thereof, benzoquinone or derivatives thereof, naphthoquinone or derivatives thereof, anthraquinones or derivatives thereof, tetra Cyanoanthraquinodimethane or derivatives thereof, fluorenone derivatives, diphenyldicyanoethylene or derivatives thereof, diphenoquinone derivatives, or metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof, polyfluorene or derivatives thereof And so on.

The film thickness of the electron transport layer is appropriately set in consideration of the required characteristics and the simplicity of the film forming process, and is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, more preferably 5 nm to 200 nm. .

<Electron injection layer>
As a material constituting the electron injection layer, an optimum material is appropriately selected according to the type of the light emitting layer, and includes, for example, one or more of alkali metals, alkaline earth metals, alkali metals, and alkaline earth metals. Examples include alloys, alkali metal or alkaline earth metal oxides, halides, carbonates, and mixtures of these substances. Examples of alkali metals, alkali metal oxides, halides, and carbonates include lithium, sodium, potassium, rubidium, cesium, lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, potassium oxide, potassium fluoride , Rubidium oxide, rubidium fluoride, cesium oxide, cesium fluoride, lithium carbonate, and the like. Examples of alkaline earth metals, alkaline earth metal oxides, halides and carbonates include magnesium, calcium, barium, strontium, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, barium oxide, Examples thereof include barium fluoride, strontium oxide, strontium fluoride, and magnesium carbonate. An electron injection layer may be comprised by the laminated body which laminated | stacked two or more layers, for example, LiF / Ca etc. can be mentioned.

The thickness of the electron injection layer is preferably about 1 nm to 1 μm.

Each organic EL layer described above can be formed by, for example, a coating type process such as a nozzle printing method, an ink jet printing method, a relief printing method, an intaglio printing method, a vacuum deposition method, a sputtering method, or a CVD method.

In the coating type process, an organic EL layer is formed by applying and forming an ink containing a material and a solvent for each organic EL layer, and further evaporating and solidifying the solvent. Examples of the ink solvent used include chlorine solvents such as chloroform, methylene chloride, and dichloroethane, ether solvents such as tetrahydrofuran, aromatic hydrocarbon solvents such as toluene and xylene, ketone solvents such as acetone and methyl ethyl ketone, Ester solvents such as ethyl acetate, butyl acetate and ethyl cellosolve acetate, and water are used.

Hereinafter, the present invention will be described in more detail with reference to examples. In the examples, “%” and “parts” are by weight and parts by weight unless otherwise specified.

(Synthesis Example 1)
In a four-necked flask equipped with a reflux condenser, a nitrogen inlet tube, a thermometer and a stirrer, 30 parts of methacrylic acid, 30 parts of 2-hydroxyethyl methacrylate, 40 parts of isobornyl methacrylate, 5.9 of 2-sulfanylethanol And 163 parts of propylene glycol monomethyl ether acetate were heated to 70 ° C. and stirred for 30 minutes under a nitrogen stream. To this, 1.3 parts of azobisisobutyronitrile was added and polymerized for 18 hours. Thereafter, 29.3 parts of 2-isocyanatoethyl acrylate (Karenz AOI; manufactured by Showa Denko KK) was added, 50 ppm of hydroquinone monomethyl ether was added to the total composition, and the mixture was reacted at 45 ° C. for 1 hour in a nitrogen stream. As a result, a solution of a copolymer (alkali-soluble resin Ab) having a solid content of 34% by weight was obtained. The obtained alkali-soluble resin Ab had a weight average molecular weight (Mw) of 4900.

(Synthesis Example 2)
78 parts α-

chloroacrylic acid

3,3,4,4,5,5,6,6,6-nanofluorohexyl in a four-necked flask equipped with a reflux condenser, a nitrogen inlet, a thermometer and a stirrer , 19.5 parts of methacrylic acid, 19.5 parts of isobornyl methacrylate, 13 parts of glycidyl methacrylate, 12.7 parts of dodecanethiol, 266 parts of propylene glycol monomethyl ether acetate, heated to 70 ° C. and then under nitrogen flow for 30 minutes Stir with. 1 part of azobisisobutyronitrile was added to this, polymerized for 18 hours, and a copolymer (fluorinated liquid repellent Ba) having a solid content of 33% by weight and an acid value of 68 mg-KOH / g (in terms of solid content) was obtained. A solution was obtained. The obtained resin Ba had a weight average molecular weight of 7,500.

The fluorine-based liquid repellent Ba has the following structural units.

(Synthesis Example 3)
Α-

Chloromethacrylic acid

3,3,4,4,5,5,6,6,7,7,8,8 in a four-necked flask equipped with a reflux condenser, nitrogen inlet, thermometer and stirrer , 8-tridecafluorooctyl, 19.5 parts of methacrylic acid, 19.5 parts of isobornyl methacrylate, 13 parts of glycidyl methacrylate, 12.7 parts of dodecanethiol, 266 parts of propylene glycol monomethyl ether acetate, 70 ° C. And then stirred for 30 minutes under a nitrogen stream. 1 part of azobisisobutyronitrile was added to this, polymerized for 18 hours, and a copolymer (fluorinated liquid repellent Bb) having a solid content of 33% by weight and an acid value of 65 mg-KOH / g (in terms of solid content) was obtained. A solution was obtained. The obtained resin Bb had a weight average molecular weight of 6,800.

The fluorine-based liquid repellent Bb has the following structural units.

The weight average molecular weight (Mw) and number average molecular weight (Mn) of the resins obtained in Synthesis Examples 1, 2, and 3 were measured using the GPC method under the following conditions.

Apparatus; K2479 (manufactured by Shimadzu Corporation)
Column; SHIMADZU Shim-pack GPC-80M
Column temperature: 40 ° C
Solvent; THF (tetrahydrofuran)
Flow rate: 1.0 mL / min
Detector; RI
The polystyrene-converted weight average molecular weight and number average molecular weight ratio (Mw / Mn) obtained above was defined as molecular weight distribution.

(Synthesis Example 4)
90 parts by weight of poly p-vinylphenol (weight average molecular weight 6,000) and novolak resin (weight average) obtained by dehydration condensation with m-cresol / m-cresol / p-cresol at a charging ratio of 70/30 (weight ratio) Alkali-soluble resin Aa comprising 10 parts by weight of 4,000 molecular weight was obtained.

In addition, 60 parts by weight of poly p-vinylphenol (weight average molecular weight 6,000) and novolak resin (weight) obtained by dehydration condensation with m-cresol at a charging ratio of m-cresol / p-cresol of 70/30 (weight ratio). An alkali-soluble resin Aa ′ comprising 40 parts by weight of an average molecular weight of 4,000 was obtained.

<Preparation of photosensitive resin>
Each component was mixed with solvent Ea (propylene glycol monomethyl ether acetate) so that the solid content was 18.0%, and negative

photosensitive resin compositions

1, 2, and 3 shown in Table 3 were obtained.

In Table 3, the numerical value of each component in the Examples represents the weight% (composition ratio) of each component when the solid content (A + C + D) in the photosensitive resin composition is 100 parts by weight. The numerical value of each component in the comparative example indicates the weight% (composition ratio) of each component when the solid content (A + B + C + G) in the photosensitive resin composition is 100 parts by weight.

Each component used in Examples and Comparative Examples is as follows.

Ca: Melamine-based resin cross-linking agent (Mitsui Cytex, Cymel 303)
Cb: Melamine-based resin crosslinking agent (Mitsui Cytex Co., Ltd., Cymel 300)
Ha: Light absorber (dye) manufactured by Orient Chemical Co., Ltd .: Oil Yellow Ga: Tetrahydrophthalic anhydride (Licacid TH: Shin Nippon Rika Co., Ltd.)
Gb: 2-Hydroxy-1- {4- [4- (2-hydroxy-2-methylpropionyl) -benzyl] phenyl} -2-methylpropan-1-one (photopolymerization initiator Irgacure 127; BASF Japan Ltd. ) Made)
Gc: Pentaerythritol tetraacrylate (polymerizable compound A-TMMT; manufactured by Shin-Nakamura Chemical Co., Ltd.)

<Permeability of composition>
Each of the photosensitive resin compositions obtained above was 400 to 700 nm using an ultraviolet-visible near-infrared spectrophotometer (V-650; manufactured by JASCO Corporation) (quartz cell, optical path length: 1 cm). The average transmittance (%) was measured. The results are shown in Table 4.

<Preparation of coating film>
A 2-inch square glass substrate (Eagle XG; manufactured by Corning) was sequentially washed with a neutral detergent, water and alcohol and then dried. On this glass substrate, the

photosensitive resin compositions

1, 2, and 3 obtained above were each spin-coated so that the film thickness after post-baking was 3.0 μm, and a vacuum dryer (Microtech Co., Ltd.) was obtained. The product was dried under reduced pressure until the degree of vacuum became 66 kPa, and then pre-baked at 80 ° C. for 2 minutes and dried. After cooling, using an exposure machine (TME-150RSK; manufactured by Topcon Corp., light source; ultrahigh pressure mercury lamp), irradiation was performed with light of an exposure amount of 50 mJ / cm ² (based on 365 nm) in an air atmosphere. In addition, the irradiation to the photosensitive resin composition at this time used the ultra high pressure mercury lamp. After the light irradiation, the

photosensitive resin compositions

1 and 2 were baked on a hot plate at 110 ° C. for 60 seconds to crosslink the exposed portion. Thereafter, the coating film was immersed in and shaken at 23 ° C. for 60 seconds in an aqueous developer containing 0.12% of a nonionic surfactant and 0.04% of potassium hydroxide. A coating film was obtained by heating (post-baking) at 20 ° C. for 20 minutes.

About the photosensitive resin composition 3, while changing the exposure amount to 500 mJ / cm < ² > (365 nm reference | standard), the coating film was obtained by the method similar to the above except not performing baking after light irradiation.

<Average transmittance of coating film>
The obtained coating film was measured for average transmittance (%) at 400 to 700 nm using a microspectrophotometer (OSP-SP200; manufactured by OLYMPUS). Higher transmittance means less absorption.

<Contact angle>
About the obtained coating film, the contact angle with anisole was measured using the contact angle meter (DGD Fast / 60; made by GBX). Table 5 shows the measurement results.

The higher the contact angle, the higher the liquid repellency. If the contact angle in a coating film is high, also in the pattern formed using the same photosensitive resin composition, a contact angle is high. When a partition is formed of a photosensitive resin composition having a high contact angle, and ink is printed by an ink jet apparatus inside the partition, the ink is easily repelled. Therefore, for example, when a color filter is manufactured by an inkjet method, ink color mixing between adjacent pixel regions hardly occurs.

<Heat resistance evaluation>
The obtained coating film was heated at 240 ° C. for 1 hour in a clean oven, and the film thickness and transmittance were measured. From the film thickness before and after heating and the transmittance at 400 nm, the rate of change was determined according to the following equation.

Film thickness change rate (%) = film thickness after heating (μm) / film thickness before heating (μm) × 100
Transmittance change rate (%) = transmittance after heating (%) / transmittance before heating (%) × 100
If the heat resistance in the coating film is good, the heat resistance is good even in a pattern formed using the same photosensitive resin composition. The results are shown in Table 6.

<Pattern formation>
A 2-inch square glass substrate (Eagle XG; manufactured by Corning) was sequentially washed with a neutral detergent, water and alcohol and then dried. On this glass substrate, the

photosensitive resin compositions

1 and 2 were each spin-coated so that the film thickness after post-baking was 3.5 μm, and the degree of vacuum was reduced with a vacuum dryer (manufactured by Microtech Co., Ltd.). After drying under reduced pressure until reaching 66 kPa, it was dried by prebaking at 80 ° C. for 2 minutes on a hot plate. After cooling, the distance between the substrate coated with the

photosensitive resin compositions

1, 2, and 3 and the quartz glass photomask was set to 10 μm, and the exposure machine (TME-150RSK; manufactured by Topcon Corporation, light source: ultra high pressure mercury lamp ) Was irradiated with light having an exposure amount of 50 mJ / cm ² (based on 365 nm) in an air atmosphere. In addition, irradiation to the photosensitive resin composition at this time was performed by passing the radiated light from the ultra-high pressure mercury lamp through an optical filter (UV-33; manufactured by Asahi Spectroscopic Co., Ltd.). Further, as a photomask, a photomask in which a pattern (having a plurality of square light-transmitting portions each having a side of 13 μm and a space between the squares of 100 μm) (that is, the light-transmitting portions) is formed on the same plane is used. It was.

After the light irradiation, the

photosensitive resin compositions

1 and 2 were baked on a hot plate at 110 ° C. for 60 seconds to crosslink the exposed portion. Thereafter, the coating film was developed by immersing and shaking in an aqueous developer containing 0.12% of a nonionic surfactant and 0.04% of potassium hydroxide at 25 ° C. for 100 seconds, washed with water, Post baking was performed at 235 ° C. for 15 minutes to obtain a pattern.

<Determination of “existence” of residues other than the pattern part>
A region surrounded by the partition wall made of the pattern structure formed as described above was filled with pure water and anisole with an inkjet apparatus (Litrex142P manufactured by ULVAC). A microscopic observation was made as to whether repellence occurred at the boundary between the partition wall and the region surrounded by the partition wall. No repelling occurred on the partition walls obtained from the

photosensitive resin compositions

1 and 2 in the examples, and repelling occurred on the partition walls obtained from the photosensitive resin composition 3 as the comparative example.

From the results of Examples, it can be seen that by using the negative photosensitive resin composition of the present invention, it is possible to form a pattern having no (very little) residue other than the coating film and the pattern portion excellent in heat resistance.

Claims

A negative photosensitive resin composition comprising an alkali-soluble resin (A), a fluorine-based liquid repellent (B), a crosslinking agent (C), and an acid generator (D);
The fluorine-based liquid repellent (B) is an addition polymer containing a structural unit derived from an unsaturated compound having a fluoroalkyl group having 4 to 6 carbon atoms, and the addition ratio of the fluorine-based liquid repellent (B) is a composition. A photosensitive resin composition having a total solid content of 0.01 to 1.0% by weight.
The photosensitive resin composition according to claim 1, further comprising a solvent (E).
The photosensitive resin composition according to claim 1, wherein the alkali-soluble resin (A) contains a phenol resin.
The photosensitive composition according to claim 1, wherein the alkali-soluble resin (A) contains a novolac resin.
The photosensitivity according to claim 1, wherein the fluorine-based liquid repellent (B) is an addition polymer containing a structural unit derived from at least one selected from the group consisting of an unsaturated carboxylic acid and an unsaturated carboxylic acid anhydride. Resin composition.
The photosensitive resin composition according to claim 1, wherein the fluorine-based liquid repellent (B) is an addition polymer containing a structural unit derived from an unsaturated compound having a cyclic ether structure having 2 to 4 carbon atoms.
A pattern structure formed using the photosensitive resin composition according to claim 1.
A display device comprising the pattern structure according to claim 7.
An inkjet partition including the pattern structure according to claim 7.