201222706 六、發明說明： 【發明所屬之技術領域】 月ϊΐ於—種對例如平板顯示器（FPD)用的玻璃基板等 基板K轭加熱處理的加熱處理裝置。 【先前技術】 -般而言’在平板顯示器（FPD)的製造過程中 itFPD的微影程序包含：在玻璃基板等構件上塗布抗」= ，布1、將光罩圖案轉印到抗鋪膜上的絲步驟以及在曝光 後使圖案顯f彡峨影步驟這3個基本步驟。在鮮基本步驟的前 後會實施各種輔助誠理步驟。例如，在塗布步驟前會進行去除 基板水分的熱處理（脱水轉）。在塗布步雜曝光轉之間會進 打將抗鋪膜塗布後所殘留之溶劑蒸發的熱處理（預烘烤）。在顯 影步驟後’會軸·將抗侧贿所触之顯練或洗淨液基發 去的熱處理（後烘烤）。 ...... 習知的加熱處理（烘烤）健，在錄情況下，_成熱板 ，相的構造，其在熱板之上載置玻璃基板等構件，並從上方蓋上 蓋。P以形成處理室’織在處理室内加熱基板，接著將抗餘劑膜 所揮發之瓣解溶獅紐翻。在料加減理裝置中，具 備.搬運機械裝置；為了傳遞基板使複數支升降銷從熱板的貫通 孔突出或从骑絲抬起或放下的翁賴構；以及將蓋部蓋 在熱板之上或朝上方將其打開的蓋部開閉機構。另外，固定上蓋 ，在-側壁部上設置基板的搬人送出口的類型會具個來開閉該 基板搬入送出口的閘門機構（參照例如專利文獻1、2)。 [習知技術文獻] [專利文獻] [專利文獻1]日本特開平8—313855號公敎 [專利文獻2]日本特開平11 — 204428號公報 201222706 【發明内容】 [發明所欲解決的問題] 然而’在習知的加熱處理裝置中，利用升 搬運機械裝置的傳遞步驟將基板搬 === 5理量較低。另外，近年來，因為fpd的大:費=== ^至3 2m以上的巨大玻璃基板，在前述 成 中，其在搬運臂與升降銷之間或升降銷與加敎板之 度為止需要㈣相當長的時間，故會雜許多電力所叹疋的，皿 有鑑於上述習知技術的問題點，本發 力^處理裝置，其即使技理大型玻璃』 基板的情況下提高處理速度，神H $在不抽傷到 [解決問題之技術手段]门時心.產生並節省能源。 為了解決上述問題，本發明提供一籍 加熱處理裝置，包含運路徑，處理的 體，其以包圍該搬運路徑的方式讲置 ^搬運基板；框 的中央部从搬運方向時H基板的搬運方向 構；複數個上部面狀加熱部，^ 排氣機 的f方向上區分為中= =置進刪，使所區分之該兩端部的溫度比該中央部= 具備面狀i 2體:其中;方宜 該面狀加熱部的寬度方向財央部健設第熱ί時在ί 201222706 狀加熱部的寬度方向的兩侧部位分別埋設第2管狀加熱器以及第 3管狀加熱器，該第2以及第3管狀加熱器宜為相同種類的管狀加 熱器’該第1管狀加熱器的端部與該第2以及第3管狀加熱器的 端部更宜在該搬運路徑的寬度方向上隔開既定距離。此時，該第1 官狀加熱器宜為護套加熱器，該第2以及第3管狀加熱器宜為插 裝加熱器。 另外’在本發明中，面狀的該放熱體宜包含：與接受加熱處 理的基板對向的表面；相對於該表面的背面；以及從該背面開始 延伸，設置在該間隔區域上的缺口。 另外，本發明提供一種對基板進行加熱處理的加熱處理裝 置，包含： 搬運路徑，其在水平方向上搬運基板； ，框體，其以包圍該搬運路徑的方式設置，同時在該基板的搬 運方向的中央部以及搬運方向的兩端部設置對内部進行排氣 氣機構； ，數個上部面狀加熱部，其配置在該搬運路徑的上部；以及 複數個下部面狀加熱部，其配置在該搬運路徑的下部； 該上部以及下部面狀加熱部在該搬運路徑的搬運方向上分 區， 該上部以及下部面狀加熱部在該搬運路徑的寬度方向上區分 為中央部以及兩端部， 該上部以及下部面狀加熱部每一個均設有用來對該中央部以 及該兩端部的内部加熱的加熱器， 高。該中央部的加熱H溫度蚊絲制端部的加齡溫度更 兩端邱…it發明中L宜將财央部的加熱11溫度奴成比該 到兮二二f溫度更μ既定溫度，當該框體所*積的熱傳導 ϋΤι時’舰械部鱗卩的溫度相同。 [對照先則技術之功效] 本發明包含在水平方向±搬運基板的搬運路徑以及以圍繞該 6 201222706 搬 的置的框體，將配置在該搬運路徑的上部盘下邱 的禝數個耐大加熱部私嫌運d、p 處理量與加熱的均域細溫度㈣，便可提高基板的 内邻該框體的搬運方向中央部以及兩端部設置對該框體 =忠同時上部以及下部的加熱部均= 戶方向的兩侧㈣加熱電力設定成比該搬運路徑的寬 度方向的巾央部更低，使加熱處理更平均。 ㈣見 【實施方式】 將本發明之加熱處雜置應·FPD基板的抗侧 塗布、顯影處理裝置的情況。 4 示可應用本發明之加熱處理裝置的塗布、顯影處理 =作為-構造實施例。該塗布、顯影處理祕設置在無塵 ^制” FPD基板當倾處理基板（町稱絲板G)，在 程序中實施微影步驟之中的洗淨、抗钱劑塗布、預烘 顯影以及後烘烤等各種處理。 八 # 該塗布、顯影處理系統200由4大區塊所構成：與外部裝置 傳，收納基板0的®盒c的匣盒站部（C/S) 201 ;對基板G塗 布藥液的塗布處理線程202;與曝光裝置傳遞基板的介面部（I/F) 203 ;以及在曝光後使基板G顯影的顯影處理線程2〇5。曝光裝置 204與介面部203隣接設置。 匣盒站部（C/S) 201具備：匣盒台1〇，其可在水平方向例 如X方向上並排載置至多4個匣盒C，該匣盒C能夠以多段堆疊 的方式收納複數片基板G ;以及搬運機構11，其可對該匣盒台川 的匣盒C執行基板G的搬出或送入動作。 搬運機構Π ’具有可保持基板G的機構，例如搬運臂12，其 可在水平的X、γ方向、垂直的z方向以及水平旋轉（θ)的4個 軸上動作，且可對隣接的塗布處理線程202與顯影處理線程205 進行基板G的傳遞。 201222706 在塗布處理線程202上，從匣盒站c朝介面部203依序配置 了準^子IJY照射單元（e—uv) 21、洗滌洗淨單元（SCR) 22、 予^熱單元（PH) 23、疏水單元（AD) 24、冷卻單元（COL) 25、 抗钱劑塗布單元（CT) 26、減壓乾燥單元（DP) 27、加熱處理單 元（HT) 28、冷卻單元（c〇L) 29。 準分子UV照射單元（e—UV) 21可進行除去基板G所包含 之，機物的處理，洗滌洗淨單元（SCR) 22可進行基板Q的洗滌 ，淨處理以^乾燥處理。預熱單元（PH) 23可進行基板G的加熱 ,理’疏水單元（AD) 24可進行基板G的疏水化處理，冷卻單 元（COL) 25可冷卻基板G。抗姓劑塗布單元（CT) 26可將抗钮 劑液供基板G上以形成抗蝕劑膜，減壓乾燥單元（Dp) 27 可f減壓環境下讓基板G上的抗蝕劑膜所包含的揮發成分蒸發， 使抗#劑膜乾燥。文後詳述之加熱處理單元（HT) 28可進行基板 G的加熱處理，冷卻單元（COL) 29與冷卻單元（C0L) 25同樣 可冷卻基板G。 在顯影處理線程205上，從介面部203朝匣盒站201侧，依 序配置顯影單元（DEV) 30、加熱處理單元（HT) 31、冷卻單元 (C〇L) 32。另外’在冷卻單元（COL) 32與匣盒站201之間設 置了可對經過包含抗蝕劑塗布以及顯影在内之一連串處理的基板 G進行檢査的檢査裝置（IP) 35。 顯影單元（DEV) 30依序進行對基板G塗布顯影液的處理、 基板G的清洗處理、基板G的乾燥處理。加熱處理單元（Ητ) 二、力7”、、處理單元（ΗΤ) 28同樣可進行基板g的加熱處理’冷卻單 兀（C〇L) 32與冷卻單元（COL) 25同樣可冷卻基板G。 ^介面部203具備：旋轉台（RS) 44，其可配置收納基板G的 緩衝匣盒且可作為基板G的傳遞部；以及搬運臂43，其接收塗布 處理線程202所搬運過來的基板G，並將基板G搬運到旋轉台⑽) 44。搬運臂43可在水平的Χ、γ方向、垂直的z方向以及水平旋 轉（Θ)的4個軸上動作，亦可對隣接搬運臂43設置的曝光裝置 204以及膦接搬運臂43以及顯影單元（DEV) 3〇設置且具有周邊 201222706 迦）卿卩字曝域（TITLER)的_置區塊90 制裝置101與: 制f置1G1而受到控制。控 部1〇2由操作者可於入:Ή1 s己憶部103連接’該輸入輸出 輩开.諸# ί 了輪使絲、顯影處理祕綱的各部位戋各 理等=處理的控制程式或處理條件Λίί的處方處或冷部處 =====的”，控制程式 CD-ROM l4,Ba』便用電細可§貝取的圯憶媒體，例如 盆他带置轉料記賴斷靖㈣料，亦可從 ，、他，置獲传’例如透過專用線路隨時傳送而在線上利用之。 盒站二iif 巾，首先，在e 11的搬if劈置之匣I C内的基板0被搬運裝置 的搬運# 12搬運到塗布處理線程2〇2的上 ::==)21内對基板G照射紫外線使其= 外線洗淨主要可除去基板表面的有機物。在紫外線洗 淨輥子搬運方式搬運到洗淨料部的洗滌洗 在洗_淨單元（SCR) 22巾，-邊细輥子搬運 對其頂面猶理面）實施擦刷洗淨 ^入風洗淨，糟此從基板表面除去粒子狀的污垢。另外， =仍-邊以平流方式搬運基板G —邊_氣騎去除液體，使 ，，乾燥:。在洗蘇洗淨單元（SCR) 22隨過洗淨處理的基板 ’在預熱單元（PH)23受到加熱處理使其脱水。在預熱單p 23經過加熱處理的基板G，在疏水單元（AD) 24受到疏水化處 理。利用疏水化處理使基板G與抗蝕劑液的密合性提高二在疏水 201222706 皁元（AD) 24經過疏水化處理的基板G，在冷 冷卻到既定的f溫溫度。 7丨早VCOL) 25 亓τΐίϊ單ΐ (既）25受到冷卻的基板G，在抗钱劑塗布單 ί f i f成抗侧膜。基板G利用旋轉塗布法或槽缝塗布法 土板頂面（被處理面）塗布抗蝕劑液。在抗钱劑塗布元 26，成抗__紐G，嫌運線以雜運 凡（DP) 27·減壓氣體環境進行抗__乾驗理乾知早 •ii卜:單元(ct) 26採用旋轉塗布法時，抗蝕 i把(CT 2的上游侧的26i以及下游侧的260均為搬運 基板G的輥子搬運機構。另外，當抗餘劑 CCT) 26 iCOL) 25之輥子搬運機構過渡到採用槽縫塗布時所使用 之工氣洋起搬運機構的移載單元，下游側 運機構過渡到減壓乾燥單元(DP)27之輥子搬運機載 在減壓乾燥單元(DI027受到抗韻劑膜的乾燥處理的基板G， ΖΐΪϊί ^城處理單元（HT) 28藉由加熱處理將抗儀劑 3的溶祕發除去。加熱處理細後述馳子搬運機構5 i邊f ϊτΐ線上搬運基板G —舰行的。作為本發_加熱處理 早疋（HT) 28的詳細動作容後詳述。 ^熱處理單元（HT) 28㈣加祕_基板G，於搬運線 搬運，在冷卻單元（C〇L)四被冷卻。在冷卻單元（c〇l) 破冷部板G ’在塗布、線上被搬運到下游側端部之後，被介 面。卩203的搬運臂43搬運到旋轉台（RS) 44上。接著，某 =運臂43搬運到外部裝置區塊9〇的周邊曝光裝置㈤周 置㈤）受_光歧，將祕綱财要耕周圍部 接著，基板G被搬運臂43搬運到曝光裝置2〇4，對抗蝕劑膜 細曝域理。另外，基板G在暫雜收納到旋轉台 ) 44上的緩衝£盒内之後’有時也會被搬運到曝光裝置2〇4。 +光處理完成的基板G，被搬運臂43搬運到外部裝置區塊9〇的 201222706 印字曝光機（TITLER) 90，印字曝光機（TITLER) 90將產品的 ID資訊以2維碼或OCR文字記錄成既定資訊。 、在印字曝光機（TITLER) 90記錄了既定資訊的基板G，被搬 運到顯景彡處理線程205上，在顯影單元（DEV) 30依序受到顯影 液的塗布處理、清洗處理以及乾燥處理。顯影液的塗布處理、清 洗處理以及乾燥處理例如按照以下順序進行：一邊在搬運線上搬 運基板G —邊在基板G上盛裝顯影液，接著，暫時停止搬運並使 基板傾斜既定角度以將顯影液流掉，在該狀態下將清洗液供給到 基板G上以沖掉顯影液，之後，基板G回到水平態勢並再次受到 搬運，同時對基板G吹送乾燥氣體。 在顯影單元（DEV) 30經過顯影液處理的基板G，在搬運線 上受到搬運’在加祕理單元（HT) 31進行加熱纽，將抗侧 膜所包含的溶劑以及水分蒸發除去。加熱處理係一邊利用輥子搬 運5在搬運線上搬運基板G時一邊對其進行。另外，亦可在 顯影單元（DEV) 30與加熱處理單元（HT) 31之間設置可進行 顯影液的脱色處理的i線uv照射單元。在加熱處理單元（Ητ) 31鉍過加熱處理的基板G，在顯影處理線程2〇5上受到搬 冷卻單元（COL) 32被冷卻。 在冷部早兀（C〇L) 32《到冷卻的基板G，在顯影處理線程. 2〇5上党到搬運，在檢査單元（Ip) 35接受檢査。通過檢査的基 板G，被匣盒站201所設置之搬運裝置u的搬運臂12收納到 置台10所载置之既定匣盒C内。 接著，利用圖3說明在以前述方式構成之加熱處理單元（201222706 VI. Description of the Invention: [Technical Field] The present invention relates to a heat treatment apparatus for heat treatment of a substrate K yoke such as a glass substrate for a flat panel display (FPD). [Prior Art] - Generally speaking, the lithography procedure of the itFPD in the manufacturing process of a flat panel display (FPD) includes: coating an anti-" on a member such as a glass substrate, cloth 1, transferring the mask pattern to the anti-filming film The upper silk step and the three basic steps of making the pattern appear after exposure. Various auxiliary steps are implemented before and after the fresh basic steps. For example, heat treatment (dehydration) for removing the moisture of the substrate is performed before the coating step. A heat treatment (prebaking) for evaporating the solvent remaining after the anti-film coating is applied between the coating step and the exposure. After the development step, the shaft will be heat-treated (post-baking) in which the anti-bribery is exposed or the washing liquid base is applied. ...... The conventional heat treatment (baking) is healthy. In the case of recording, the structure of the hot plate and the phase is placed on the hot plate, and the glass substrate and the like are placed on the hot plate, and the cover is covered from above. P heats the substrate in the processing chamber by forming a processing chamber, and then pulverizes the velvet which is volatilized by the anti-surplus film. In the material addition and subtraction device, there is provided a conveying mechanism; in order to transfer the substrate, a plurality of lifting pins are protruded from the through hole of the hot plate or lifted or lowered from the wire; and the cover is placed on the hot plate. A lid opening and closing mechanism that opens the upper or upper side. In addition, the type of the transfer port in which the substrate is provided on the side wall portion is provided with a shutter mechanism for opening and closing the substrate loading/unloading port (see, for example, Patent Documents 1 and 2). [Patent Document 1] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. However, in the conventional heat treatment apparatus, the substrate is transported by the transfer step of the lift transport mechanism ===5. In addition, in recent years, the large glass substrate of fpd: cost === ^ to 3 2 m or more, in the above-mentioned formation, it is required between the transfer arm and the lift pin or the degree of the lift pin and the twist plate (4) For a long time, it will be mixed with a lot of power, and in view of the above-mentioned problems of the prior art, the power processing device, which improves the processing speed even in the case of a large glass substrate, God H $ Produce and save energy without damaging the [technical means of solving problems]. In order to solve the above problems, the present invention provides a heat treatment apparatus including a transport path and a processed body that transports the substrate so as to surround the transport path; the central portion of the frame is transported from the transport direction of the H substrate. a plurality of upper planar heating portions, wherein the exhaust machine is divided into medium == placed in the f direction, so that the temperature of the two end portions is different from the central portion = having a planar i 2 body: wherein; In the width direction of the planar heating unit, the second tubular heater and the third tubular heater are embedded in the two sides of the width direction of the heating element in the width direction of the solar heating unit. Preferably, the third tubular heater is a tubular heater of the same type. The end of the first tubular heater and the ends of the second and third tubular heaters are preferably spaced apart by a predetermined distance in the width direction of the conveying path. . In this case, the first official heater is preferably a jacket heater, and the second and third tubular heaters are preferably plug-in heaters. Further, in the present invention, the planar heat radiator preferably includes: a surface opposed to the substrate subjected to the heat treatment; a back surface opposite to the surface; and a notch extending from the back surface and provided on the space. Further, the present invention provides a heat treatment apparatus for heat-treating a substrate, comprising: a conveyance path that conveys the substrate in a horizontal direction; and a frame that is disposed to surround the conveyance path while being conveyed in the substrate The central portion and the both ends of the transport direction are provided with an exhaust gas mechanism inside; a plurality of upper planar heating portions disposed on an upper portion of the transport path; and a plurality of lower planar heating portions disposed therein a lower portion of the conveyance path; the upper portion and the lower planar heating portion are partitioned in a conveyance direction of the conveyance path, and the upper portion and the lower planar heating portion are divided into a center portion and both end portions in a width direction of the conveyance path, the upper portion And the lower planar heating portions are each provided with a heater for heating the central portion and the inside of the both end portions, which is high. The central part of the heating H temperature mosquito end of the age of the end of the temperature is more than the end of the Qi ... It is invented that L should be the Ministry of Finance's heating 11 temperature slaves than the temperature of the 兮 22 f more than the established temperature, when The heat conduction of the frame is the same as the temperature of the ship's scale. [Effects of the technique of the prior art] The present invention includes a transport path for transporting the substrate in the horizontal direction and a frame that is placed around the 6 201222706, and the number of the upper trays placed in the upper tray of the transport path is large. In the heating section, the amount of d and p treatments and the average temperature of the heating (4) are increased, so that the center portion of the substrate and the both ends of the frame are provided in the center of the substrate, and the both ends are provided. Both of the heating units = both sides of the household direction (4) The heating power is set lower than the center of the towel in the width direction of the conveying path, and the heating process is more even. (4) [Embodiment] The heating of the present invention is applied to the anti-side coating and development processing apparatus of the FPD substrate. 4 shows the coating and development treatment of the heat treatment apparatus to which the present invention can be applied. The coating and development process are provided in a dust-free "FPD substrate", which is a tilting substrate (the wire plate G), and is subjected to cleaning, anti-money coating, pre-bake development, and the like in the lithography step in the program. Various processes such as baking. The coating and development processing system 200 is composed of four large blocks: a cassette station unit (C/S) 201 that accommodates the cassette c of the substrate 0, and a substrate G. a coating processing thread 202 for applying a chemical solution; a dielectric surface portion (I/F) 203 for transferring the substrate with the exposure device; and a development processing thread 2〇5 for developing the substrate G after the exposure. The exposure device 204 is disposed adjacent to the dielectric surface portion 203. The cassette station unit (C/S) 201 is provided with a cassette holder 1 that can hold up to four cassettes C side by side in the horizontal direction, for example, the X direction, and the cassette C can accommodate a plurality of sheets in a plurality of stages. The substrate G and the transport mechanism 11 can perform the loading and unloading operation of the substrate G on the cassette C of the cassette. The transport mechanism Π 'has a mechanism capable of holding the substrate G, such as the transport arm 12, which can be Horizontal X, γ direction, vertical z direction, and horizontal rotation (θ) on 4 axes The operation is performed, and the adjacent coating processing thread 202 and the development processing thread 205 can be transferred to the substrate G. 201222706 On the coating processing thread 202, the quasi-sub-IJY irradiation unit is sequentially arranged from the cassette station c to the interfacial portion 203 ( E-uv) 21, washing and cleaning unit (SCR) 22, heat unit (PH) 23, hydrophobic unit (AD) 24, cooling unit (COL) 25, anti-drug coating unit (CT) 26, decompression Drying unit (DP) 27, heat treatment unit (HT) 28, cooling unit (c〇L) 29. Excimer UV irradiation unit (e-UV) 21 can be used to remove the substrate G, the processing of the machine, washing The cleaning unit (SCR) 22 can perform the washing of the substrate Q, and the net processing is performed by drying. The preheating unit (PH) 23 can heat the substrate G, and the hydrophobic unit (AD) 24 can perform the hydrophobicization of the substrate G. Processing, cooling unit (COL) 25 can cool the substrate G. The anti-surname coating unit (CT) 26 can supply the anti-button agent liquid onto the substrate G to form a resist film, and the decompression drying unit (Dp) 27 can be reduced by f The volatile component contained in the resist film on the substrate G is evaporated in a pressure environment to dry the anti-drug film. The heat treatment unit (HT) 28, which will be described later in detail, heats the substrate G, and the cooling unit (COL) 29 and the cooling unit (C0L) 25 can cool the substrate G. On the development processing thread 205, from the dielectric surface 203 On the side of the cassette station 201, a developing unit (DEV) 30, a heat processing unit (HT) 31, and a cooling unit (C〇L) 32 are sequentially disposed. Further, 'between the cooling unit (COL) 32 and the cassette station 201 An inspection apparatus (IP) 35 capable of inspecting a substrate G subjected to a series of processes including resist coating and development is performed. The developing unit (DEV) 30 sequentially performs a process of applying a developer to the substrate G, a cleaning process of the substrate G, and a drying process of the substrate G. The heat treatment unit (Ητ) 2, the force 7", and the processing unit (ΗΤ) 28 can also heat-process the substrate g. The cooling unit (C〇L) 32 can cool the substrate G in the same manner as the cooling unit (COL) 25. The dielectric surface portion 203 includes a rotating table (RS) 44 that can accommodate a buffer cassette that houses the substrate G and can serve as a transmission portion of the substrate G, and a transfer arm 43 that receives the substrate G transported by the coating processing thread 202, The substrate G is transported to the turntable (10)) 44. The transport arm 43 can be operated on four axes of horizontal Χ, γ direction, vertical z direction, and horizontal rotation (Θ), or can be disposed adjacent to the transport arm 43. The exposure device 204, the phosphine transfer arm 43 and the developing unit (DEV) are provided with a peripheral unit 201222706, and the TITLER _block 90 device 101 is controlled by the f set 1G1. The control unit 1〇2 can be connected by the operator: Ή1 s 忆 部 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 103 Program or processing condition Λίί at the prescription or cold place =====", control program CD-ROM l4, Ba』 can use the fine media that can be taken by the 圯 贝 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , And use it online. In the first station, the substrate 0 in the IC of the e 11 is transported by the transport device #12 to the top of the coating processing thread 2〇2::==) 21 to the substrate G Irradiation of ultraviolet light makes it possible to remove organic matter on the surface of the substrate by washing the outer wire. Washing in the UV cleaning roller transport method to the washing material section Washing in the washing-cleaning unit (SCR) 22 towel, and carrying the fine roller to the top surface of the washing surface. This removes particulate dirt from the surface of the substrate. In addition, = still - while carrying the substrate G in an advection manner - side _ gas ride to remove liquid, make, dry:. The substrate subjected to the washing treatment in the Washing Wash Unit (SCR) 22 is subjected to heat treatment at the preheating unit (PH) 23 to be dehydrated. The substrate G subjected to heat treatment in the preheating sheet p 23 is subjected to hydrophobic treatment in the hydrophobic unit (AD) 24. The adhesion between the substrate G and the resist liquid is improved by the hydrophobization treatment. The substrate G which has been hydrophobized in the 201222706 soap element (AD) 24 is cooled to a predetermined f temperature. 7丨 early VCOL) 25 亓τΐίϊ single ΐ (both) 25 substrates that are cooled, coated with anti-money agent to form a single anti-side film. The substrate G is coated with a resist liquid by a spin coating method or a slot coating method on the top surface (treated surface) of the earth plate. In the anti-money agent coating element 26, into the __ New G, the suspect line is carried out in the GM (DP) 27 · decompression gas environment anti-_ dry test early knows early • ii: unit (ct) 26 In the spin coating method, the resist i (the 26i on the upstream side of the CT 2 and the 260 on the downstream side are the roller transport mechanisms for transporting the substrate G. In addition, when the anti-reagent CCT) 26 iCOL) 25, the roller transport mechanism transitions. The transfer unit of the work-lifting mechanism used in the slot coating, the downstream side transport mechanism transitions to the vacuum dryer unit (DP) 27, and the roller conveyor is carried in the vacuum drying unit (DI027 is subjected to the anti-protection agent) The substrate G for drying the film, the processing unit (HT) 28 of the film is removed by heat treatment, and the substrate G is transported on the line by the heat treatment process. The detailed operation of the ship's _ heat treatment early 疋 (HT) 28 is detailed later. ^ Heat treatment unit (HT) 28 (four) plus secret _ substrate G, transported on the conveyor line, in the cooling unit (C〇L) The four are cooled. In the cooling unit (c〇l), the cold plate G' is transported to the downstream side on the coating line. After that, the transfer arm 43 of the interface 203 is transported to the rotary table (RS) 44. Then, the certain exposure arm 43 is transported to the peripheral exposure device of the external device block 9 (5) (5)) Then, the secret material is ploughed to the surrounding portion, and the substrate G is transported to the exposure device 2〇4 by the transfer arm 43 to expose the resist film. Further, the substrate G may be transported to the exposure device 2〇4 after being temporarily stored in the buffer cassette on the rotary table 44. + The light-processed substrate G is transported by the transport arm 43 to the 201222706 print exposure machine (TITLER) 90 of the external device block 9T, and the print exposure machine (TITLER) 90 records the product ID information in 2D code or OCR text. Into the established information. The substrate G on which the predetermined information is recorded in the TITLER 90 is transported to the display processing thread 205, and the developing unit (DEV) 30 is sequentially subjected to the coating treatment, the cleaning processing, and the drying processing of the developing solution. The coating treatment, the cleaning treatment, and the drying treatment of the developer are performed, for example, in the following procedure: while the substrate G is transported on the transport line, the developer is placed on the substrate G, and then the transport is temporarily stopped and the substrate is tilted at a predetermined angle to flow the developer. In this state, the cleaning liquid is supplied onto the substrate G to wash off the developer, and then the substrate G returns to the horizontal state and is again transported, while the substrate G is blown with the dry gas. The substrate G subjected to the developer treatment by the developing unit (DEV) 30 is transported on the transport line. The heat is added to the cryptographic unit (HT) 31 to evaporate and remove the solvent and water contained in the anti-side film. The heat treatment is performed while the substrate G is being conveyed by the roller conveyance 5 on the conveyance line. Further, an i-line UV irradiation unit capable of performing decolorization treatment of the developer may be provided between the developing unit (DEV) 30 and the heat treatment unit (HT) 31. The heat-treated substrate G is heated by the heat treatment unit (Ητ) 31, and is cooled by the transfer cooling unit (COL) 32 at the development processing thread 2〇5. In the cold part early (C〇L) 32 "to the cooled substrate G, in the development processing thread. 2〇5 on the party to the handling, in the inspection unit (Ip) 35 to be inspected. The conveyance arm 12 of the conveyance device u provided by the magazine station 201 is accommodated in the predetermined cassette C placed in the table 10 by the inspection of the substrate G. Next, a heat treatment unit configured as described above will be described using FIG. 3 (
28、31對基板G所進行的加熱處理。加熱處理單元（H ==單元(Di) -27侧般運過來的基板G，加熱處理單Ϊ 接收從顯影單元（DEV) 30側搬運過來的基板G，苴 舰龍子顧麟5…雜雜‘ 運機構5搬運，-邊在框體6内被熱板控制器爾 以及下部面狀加熱器8卜71加熱。 恤·上4 如疋’由於基板的搬運以及加熱同時進行，故可縮短處理時 201222706 =^於基板被上部以及下部面狀加熱胃8卜71從上下兩面側加 =支可防止輕曲產生。被輥子搬運機構5搬運的基板G，通過 =口 62,遞到冷卻單元（c〇L)29側[在加熱處理單元（ht) 1為冷^皁凡（C0L) 32側]的搬運機構。 理置接^詳細説明加熱處理單元（HT) 28。另外，由於加熱處 31與加熱處理單元（HT) 28構造完全相同，故在 此以加熱處理單元（HT) 28為代表進行説明。 ΐ係表示加熱處理單元（HT) 28 (加減理裝置）的下部 俯視圖’ ® 3係側視圖。加熱處理單元（HT) 28具備： 圍ί朝y方向搬運的輥子搬運機構5 ;以將輥子搬運機構5 5所^、重6^方式設置的框體6;以及在框體6内對輥子搬運機構 所搬運的基板G進行加熱的加熱機構7、8。 舰搬運機構5係由複數支朝Χ方向延伸、大略圓柱狀且可 子構件50在Υ方向上間隔配置所構成。各輥子上件5〇 Ϊ疋接献透過齒輪等構件連接到®中未顯示的馬 上朝ΐ 旋轉，藉此，基板G在複她子構件5〇 以承it各輕子構件5G具有橫跨基板g的全寬方向（X方向） 你的的形狀’報子外周圍表面部52由樹脂等熱傳導率較 ΐ 2所構成熱機構7所加熱之基板g的熱不易傳ί過 "疋轉軸51使用咼強度且高耐飯性的肥粒鐵不銹^。 搬運If 且能夠以大略水平狀態收納基板G，在基板 φ σ 6?D ° )上配置了槽缝狀的基板搬入口 61以及基板搬 Γ搬運麟5的錢子構件％，其各旋難51以可 向框體6的x方向的側壁部上的轴承60 所又持’而配置在框體6内。 娜6的壁部义此係指上壁部、底壁部以及對向Y方向的 mi。&具減此隔著空間設置的随63以及㈣64的雙重壁 工義熱層的功能。在外壁64的内侧面上設有用來隔絕框體6内 12 201222706 外的隔熱材66。 加熱機構7具備沿著輥子搬運機構5的基板g的搬運路徑設 置在框體6内的下部面狀加熱部亦即下部面狀加熱器71 (71a〜 71〇)，下部面狀加熱器71以接近輥子搬運機構5所搬運之基板〇 的方式設置在輥子搬運機構5所搬運之基板G的背面（底面）側。 ^2外’加熱機構8具備沿著輥子搬運機構5的基板G的搬運 路徑設置在框’體6内的上部面狀加熱部亦即上部面狀加熱器81 (81a〜81h)，上部面狀加熱器81以接近輥子搬運機構5所搬運 之基板的方式設置在輥子搬運機構5所搬運之基板G的表 面）側。 、貝 當基板G使用加熱時熱分布差異較大的材料時，將表面（頂 面）側的上部面狀加熱器81 (81a〜81h)與設置在背面（底面 侧的I部面狀加熱器71 (71a〜7lG)以相同排列的方式配置成上 下對稱，便可使上下的熱分布均勻，以減少熱分布差異。 下部面狀加熱器71，在X方向上分區/且分別設/置在各輥子 =5〇之間而在Y方向上排列複數塊（從γ方向上游侧開始依 二71a 71〇)。上部面狀加熱器8丨，例如，安裝在對向框體6 =^向的侧壁部上而受到支持。為了更精密地控制基板G的加 ”，、，上。卩面狀加熱器81亦可在X方向上分區。 為了排出框體6内部的熱，會分別在在搬運方向的中央 i兩=的設置排氣口67 ’排氣口67與排氣裝置、68連 置成槽縫狀 又置複數個，亦可沿著x方向設 將，氣機構分別設置在框體6的γ方向的兩端部上，藉 以ί二屮1 If搬出口 62形成氣幕’防止外部的微粒從搬入曰口 61 出π 62侵入到框體6内部。另外，由於在與基板 方向相同的Υ方向上形成排氣流，即 =能夠以不會發生亂流的方式排出 === 201222706 在圖3中排氣口 67係配置在框體6的上部，當欲增加熱或溶 媒的排出量時，或欲排出較多微粒時，亦可在與上部排氣口 67對 稱的下部設置排氣口。另外，框體6的上壁部可在搬運方向（γ 方向）的中央位置開啟或閉合，使吾人比較容易對蒸發附著在内 壁63上的溶媒進行清理或對内部進行保養。 ‘ 接著，根據圖6說明下部面狀加熱器71的整體的溫度控制。 =制裝置101對熱板控制器1〇4下達設定溫度的命令。熱板控制 器104對熱板電源1〇5發出設定溫度的命令。此時，熱板電源分 成 105/、l〇5b、l〇5c、l〇5d、105e、1〇5f 的 6 個區塊。下部面狀 力=熱态Ή也在搬運方向的γ轴上對應熱板控制器1〇4的6個區塊 勿別配置 71a〜71b、71c〜71d、71e〜71g、71h〜71j、71k〜71m、 71n〜71〇。由於基板G的入口部、中央部、出口部以及寬度方 ^因為氣流以及㈣的蓄熱差異而溫度有解同， 塊控制加熱電力。 w 另外，下部面狀加熱器71在寬度方向上分割成D、E、F，埶 105對應D、E、F分割成s、τ、U。例如下部面狀加敎器 妝D區塊由熱板魏1G5a的s所㈣。同樣地下部面 祕口二a〜71b的E區塊由熱板電源105a的τ所控制，下部 =:口 J器、〜m的F區塊由熱板電源105a Ρ ；05b 10, . 排屮^以圖3説明加熱處理裝置28 (31)的溫度分布，為了 的熱，分別在搬運方向的中央部以及兩端部2 美板ΐ入1 職^67無錄置68連接。另外，由於 二fit 1與基嫌.62顧外·的，_使對下邱面 山态71以及上部面狀加熱器81施加相同電力 二 也 度也會有所不同，故有必要沿著搬運方向（γ軸）針對 14 201222706 加熱态71及上部面狀加熱器81的每一區塊進行控制。因此，下 (X^} 以j個b塊以進行細部控制。 ⑽Lt係f"!部面狀加熱器71的—部分以剖面顯示的俯視圖。 、二国力:‘、、、器71整體的放熱由紹、不錄鋼、陶甍等的放熱體71P $ °圖4的E列的加熱由埋設在放熱體71p中的互相平行的2 ^狀加熱器71q進行。溫度的感知利用感測器7U進行感知的所 熱板電源105輸入熱板控制器辦。熱板控制器 1〇4對應所感知之溫度發出溫度升 。 〇 ^ 71p D： Ρ；；^ίί t,、、、器71q之間，配置了空白區域（空間）7iw、刀X:管狀加執 f 1 二的溫度根據溫度感測器71u受到 g 度根據溫度感測ft 71V受到控制。 ”、、IWis〜皿 71s 支管狀加熱器Μ配置1支管狀加熱器71r、 為S怎=器化、…的加熱電力的供給量較低。理由 編度。另外，管狀加熱器71q與7lr、二忿28, 31 heat treatment of the substrate G. Heat treatment unit (H == unit (Di) -27 side of the substrate G, heat treatment unit 接收 Receive the substrate G transported from the development unit (DEV) 30 side, the stern ship Longzi Gu Lin 5... miscellaneous ' The transport mechanism 5 is transported, and is heated by the hot plate controller and the lower surface heater 8b 71 in the casing 6. The shirt 4 is 疋' because the substrate is transported and heated simultaneously, so that the processing time can be shortened. 201222706=^The substrate is heated by the upper and lower planar heating stomachs. The upper and lower surfaces are added to the support to prevent the occurrence of a slight curve. The substrate G conveyed by the roller transport mechanism 5 passes through the = port 62 to the cooling unit (c). 〇L) 29 side [in the heat treatment unit (ht) 1 is the side of the cold soap (C0L) 32 side]. The heat treatment unit (HT) 28 is explained in detail. Since the heat treatment unit (HT) 28 has the same structure, the heat treatment unit (HT) 28 will be described as a representative. The ΐ system indicates the lower view of the heat treatment unit (HT) 28 (addition and subtraction device) ' ® 3 system side View. The heat treatment unit (HT) 28 is provided with: The roller transport mechanism 5; the housing 6 provided with the roller transport mechanism 5 and the weight 6; and the heating mechanisms 7 and 8 for heating the substrate G transported by the roller transport mechanism in the housing 6. The transport mechanism 5 is formed by a plurality of branches extending in the Χ direction and having a substantially columnar shape, and the sub-members 50 are arranged at intervals in the Υ direction. Each of the roller upper members 5 〇Ϊ疋 is connected to a member not shown in the ○ through a gear or the like. Immediately rotates toward the crucible, whereby the substrate G is in the sub-member 5, and each of the lepton members 5G has a full width direction (X direction) across the substrate g. Your shape is the outer peripheral surface portion 52. The heat of the substrate g heated by the thermal mechanism 7 having a thermal conductivity higher than that of the resin 2 is not easily transmitted. The crucible 51 is made of a crucible strength and has high resistance to rice. In the substantially horizontal state storage substrate G, the slot-shaped substrate carry-in port 61 and the money-receiving member % of the substrate transporting and transporting lining 5 are disposed on the substrate φ σ 6 ΔD °, and each of the slabs 51 is slidable to the casing The bearing 60 on the side wall portion of the x direction of 6 is placed in the casing 6 while holding it. The wall portion of Na 6 refers to the upper wall portion, the bottom wall portion, and the mi opposite to the Y direction. & has the function of reducing the double-walled thermal layer with 63 and (4) 64. On the inner side surface of the outer wall 64, a heat insulating material 66 for isolating the inside of the casing 6 12 201222706 is provided. The heating mechanism 7 includes a lower planar heater 71 (71a to 71〇) which is a lower planar heating portion provided in the casing 6 along the conveyance path of the substrate g of the roller conveyance mechanism 5, and the lower planar heater 71 The substrate 搬运 conveyed by the roller conveyance mechanism 5 is provided on the back surface (bottom surface) side of the substrate G conveyed by the roller conveyance mechanism 5. The external heating unit 8 is provided with an upper planar heater 81 (81a to 81h) which is an upper planar heating portion provided in the frame body 6 along the conveyance path of the substrate G of the roller conveyance mechanism 5, and has an upper surface shape. The heater 81 is provided on the side of the surface of the substrate G conveyed by the roller conveyance mechanism 5 so as to approach the substrate conveyed by the roller conveyance mechanism 5. When the material of the Beitang substrate G having a large difference in heat distribution during heating is used, the upper surface heaters 81 (81a to 81h) on the surface (top surface) side and the I surface heaters provided on the back surface (the bottom surface side) are provided. 71 (71a to 7lG) are arranged in the same arrangement so as to be vertically symmetrical, so that the heat distribution in the upper and lower sides can be made uniform to reduce the difference in heat distribution. The lower planar heater 71 is partitioned in the X direction and is set/located separately. Each of the rollers is between 5 而 and a plurality of blocks are arranged in the Y direction (two 71a 71 从 from the upstream side in the γ direction). The upper planar heater 8 丨 is mounted, for example, on the opposite frame 6 The side wall portion is supported. In order to more precisely control the addition of the substrate G, the top surface heater 81 may be partitioned in the X direction. In order to discharge the heat inside the frame 6, it is respectively The center of the transport direction i = the setting of the exhaust port 67 'exhaust port 67 and the exhaust device, 68 are connected in a slot shape and a plurality of, can also be set along the x direction, the gas mechanism is set in the box At both ends of the body 6 in the γ direction, the air curtain is formed by the ί2屮1 If the outlet 62 is formed to prevent external The particles enter the inside of the casing 6 from the loading port 61 by π 62. Further, since the exhaust gas flow is formed in the same direction as the direction of the substrate, that is, it can be discharged without turbulence === 201222706 In Fig. 3, the exhaust port 67 is disposed at the upper portion of the casing 6. When it is desired to increase the discharge amount of heat or solvent, or to discharge a large amount of particles, an exhaust gas may be provided at a lower portion symmetrical with the upper exhaust port 67. Further, the upper wall portion of the frame body 6 can be opened or closed at the center in the conveyance direction (γ direction), making it easier for us to clean or internalize the solvent evaporated on the inner wall 63. 'Next, The overall temperature control of the lower planar heater 71 will be described with reference to Fig. 6. The manufacturing device 101 issues a command to set the temperature to the hot plate controller 1〇4. The hot plate controller 104 issues a set temperature to the hot plate power supply 1〇5. At this time, the hot plate power supply is divided into six blocks of 105/, l〇5b, l〇5c, l〇5d, 105e, and 1〇5f. The lower surface force = hot state is also the γ axis of the carrying direction. Do not configure 71a~71 for the 6 blocks corresponding to the hot plate controller 1〇4. b, 71c to 71d, 71e to 71g, 71h to 71j, 71k to 71m, 71n to 71. The temperature is solved by the inlet portion, the central portion, the outlet portion, and the width of the substrate G due to the airflow and the heat storage difference of (4). Similarly, the block controls the heating power. w Further, the lower planar heater 71 is divided into D, E, and F in the width direction, and 埶105 is divided into s, τ, and U by D, E, and F. For example, the lower surface is twisted. The block D of the makeup is made of the hot plate Wei 1G5a (4). Similarly, the E block of the lower part of the secret port 2a to 71b is controlled by the τ of the hot plate power supply 105a, and the lower part =: the mouth J device, the ~m F The block is described by the hot plate power supply 105a Ρ; 05b 10, . The heat distribution of the heat treatment device 28 (31) is illustrated in Fig. 3, and the heat is applied to the central portion and the both end portions of the conveying direction, respectively. Into 1 job ^ 67 no record 68 connection. In addition, since the second fit 1 and the base suspicion are 62, the same power is applied to the lower Qiu Mountain State 71 and the upper planar heater 81, so it is necessary to carry along the handling. The direction (γ axis) is controlled for each block of the 14 201222706 heating state 71 and the upper planar heater 81. Therefore, the lower part (X^} is used for fine control of j blocks. (10) The top view of the part of the Lt system f"! surface heater 71 is shown in cross section. The exotherm 71P of the shovel, the unrecorded steel, the pottery, etc. The heating of the E column of Fig. 4 is performed by the mutually parallel 2^ heaters 71q embedded in the heat radiating body 71p. The sensing of the temperature is utilized by the sensor 7U. The sensing hot plate power supply 105 is input to the hot plate controller. The hot plate controller 1〇4 emits a temperature rise corresponding to the sensed temperature. 〇^ 71p D: Ρ;;^ίί t,,, 71x between The temperature of the blank area (space) 7iw, the knife X: the tubular addition f 1 is configured according to the temperature sensor 71u is controlled according to the temperature sensing ft 71V. ",, IWis~ dish 71s branch heater The amount of heating power supplied to the one tubular heater 71r is set to be low. The reason is to compile. In addition, the tubular heaters 71q and 7lr,
的下熱板的溫度分布。在圖7(a)+，對基板G 端部的ϋ)ρ部面狀加熱器71分成中央部的e列、兩 熱器81進行:1。基板G的上部（表面）的加熱由上部面狀加 教器面狀加熱器㈣力圖式化。對下部面狀加 歹所&加之熱電力以中央雜高的方式設定 7 q =與，器71r，之間設有 (工間）71w、71x。此藉由圖4亦可確認。 白L找 的心二;iL的略！式化。下部面狀加熱器71 卿對應S狀加熱益7lq的加熱的溫度，同時藉由熱傳導 15 201222706 !ί,ίί持到空白區域71w#71x的接近一半的區域。同樣地管 ，加”，'盗71r、71s的熱也利用熱傳導將溫度保持到空白區域71w 的接近一半的區域。由於管狀加熱器71卜7is的電力^、卩 故溫度只有Dh、Fh。然而，框體6的壁面部的蓄熱 :生j專導，與Dh、Fh的熱累加，使其溫度與Eh的溫度相同。 盥7 H加熱器7k、71S在X方向上移動便可調整空白區域 套賴成，兩端部的管狀加熱器= 克路在金屬管之中設置線圈狀的發熱線（鎳 ，導性的耐熱絶緣材，故可防止微粒產生 tltTn 等的機械強二當優二V如疋構成之護套加熱器對抗振動、衝擊 發熱(例如㈣上的 之間封人具有高熱傳.導性H 中’並在發熱線與管 (Mgo)。由於插裝加熱器可單;向己故二j如氧化猛 她插入面狀加的; 加熱器之間的距離，便可娜 ％ I猎由調整其與該護套 之插=絲碰動柯會纽錄，如是構成 熱器構成兩端部的管狀加舞器t 斋71q’並以插裝加 板顯示制的_基板且其1 本發明之基板g係平 時振動很激烈，也能夠耐得住=過^尺時，即雜運基板G 圖案的發展趨向超微細化，幸 平板顯示器上的電路 題，對此衫上骑造微㈣射是㈣要的課 16 201222706 上部面狀加熱器81，如圖3所示的，包含配置在基板G的頂 面（表面側）的8片上部面狀加熱器81a〜81h。其中在上部面狀 加熱器81a〜81c、81f〜81h的搬運方向的寬度的正中央分割成上 部面狀加熱器8ld與81e。這是為了使框體6的上壁部在搬運方向 (Y方向）的中央位置開閉，以進行保養或内部清理。 圖5係將上部面狀加熱n 81 @一部分以剖面顯示的俯視圖。 ϋΞΪΐίΐ 81的控制方法基本上與下部面狀加熱器71相 :准，、並未在X方向上分區。另外，在放熱體81卩之中埋設3 ^狀加熱器81q。發熱溫度的感知由感測器8 ΐϊ 105 ^f，J ° 熱态81d與81e各埋設一支管狀加熱器。 G 據ΐίΪ祕的加祕魏置，便可—邊搬運基板 沒，對,、進订加熱處理，故能夠縮短處理時間，另 H、^G的搬運方向相同’便可抑制紊亂氣流的發生，並防 止楗粒的發生於未然，再者藉由面狀加熱器71 加熱處理裝置側壁面的蓄熱節 相同的部分’僅ί明：：分。另:’二:::述樣 =熱體7”，與基板㈣向的面^ 第2實施態樣係在空白區域71w、7i =口 92。缺π 92從箭號K的方向觀^ 另外，缺π 92 ____彡如直線狀。 可限制D、E、F列之門的赦捕道诂主疋精由§又置缺口 92,便 另外，該缺口 92亦可用來、放熱。面90的溫度分布更平均。 的圓孤狀。另外丨並^於四角形，亦可為圖9所示 狀。力卜缺口 ％的剖面形狀亦可為圖1〇所示的三角形 、的°lJ面形狀為四角或三角時缺口 92的前端會存在 17 201222706 角=’在該角部熱傳導容錢得不平均。反過來湘㈣，將缺 ί化2。的剖面形狀設成四角或三角，便可使表面9〇的溫度分布平 前端，在該部位熱傳導tlS二圓，二形成平，的 的剖面形狀設糊錄，絲面90的溫度分布平均化將缺口 ％ 接著，説明第3實施態樣。另外，省 相同的部分，僅說明不同的部分。在第悲樣 ，熱器71r、71s置入放熱體在7fp 員; 即，管狀加熱器71r、71s對放埶體7lD的奸入P取出亦 1對於放熱趙71P將管狀加熱 :向:另上相對於放熱體71二熱= 向内推進去，工白區域71W、71Χ就變小。The temperature distribution of the lower hot plate. In Fig. 7(a)+, the ρ) 部-shaped planar heater 71 at the end of the substrate G is divided into the e-column of the central portion and the heater 81 is performed: 1. The heating of the upper portion (surface) of the substrate G is forced by the upper planar trapper heater (four). The lower surface heating chamber & plus the thermal power is set to 7 h = and the device 71r is provided with (intermediate) 71w, 71x. This can also be confirmed by Figure 4. White L looking for the heart two; iL slightly! Modification. The lower planar heater 71 corresponds to the heating temperature of the S-shaped heating benefit 7lq, while holding the nearly half of the blank area 71w#71x by the heat conduction 15 201222706 !ί, ί . Similarly, the heat of the tube, plus ", theft 71r, 71s also uses heat conduction to maintain the temperature to nearly half of the blank area 71w. Because of the power of the tubular heater 71, the temperature is only Dh, Fh. The heat storage of the wall surface of the frame body 6 is: the heat conduction of Dj and Fh is the same as that of the temperature of Eh. The 盥7H heater 7k, 71S can be moved in the X direction to adjust the blank area. Set of Laicheng, tubular heaters at both ends = Kelu is provided with a coil-shaped heating wire in the metal tube (nickel, conductive heat-resistant insulating material, so it can prevent the mechanical strength of the particles from producing tltTn, etc.护套The sheath heater is constructed to resist vibration and shock heat (for example, (4) has a high heat transfer between the person and the conductor H (in the heating line and the tube (Mgo). Because the plug-in heater can be single; Therefore, if the second j is oxidized, she inserts the surface into it; the distance between the heaters can be adjusted by the adjustment of the sheath and the wire of the sheath. The end of the tubular plus dancer t zhai 71q' and the insert and display board to display the _ substrate and its 1 Ming's substrate g system usually vibrates very fiercely, and can withstand = when the ruler is over, that is, the development of the G-pattern of the miscellaneous substrate tends to be ultra-fine. Fortunately, the circuit on the flat panel display is used to make a micro (four) shot on the shirt. (4) The above-mentioned class 16 201222706 The upper surface heater 81 includes eight upper surface heaters 81a to 81h arranged on the top surface (surface side) of the substrate G as shown in Fig. 3. The center of the width of the heaters 81a to 81c and 81f to 81h in the conveyance direction is divided into the upper planar heaters 8ld and 81e. This is to open and close the upper wall portion of the casing 6 at the center in the conveyance direction (Y direction). Figure 5 is a top view showing a part of the upper surface heating n 81 @ partial cross section. The control method of the ϋΞΪΐίΐ 81 is basically the same as the lower planar heater 71: not, in the X direction In addition, a 3^ heater 81q is embedded in the radiator 81. The sensing of the heating temperature is buried by a sensor 8 ΐϊ 105 ^f, J ° hot 81d and 81e. According to ΐ Ϊ Ϊ 的 加 加 魏 魏 魏 , , The board is not, right, and ordered for heat treatment, so the processing time can be shortened, and the transport direction of the other H and ^G is the same 'to suppress the occurrence of turbulent airflow, and prevent the occurrence of granules, and then by the surface Heater 71 The same portion of the heat storage section on the side wall of the heat treatment device is 'only ::: minute. Another: 'two::: description = hot body 7', and the surface of the substrate (four) ^ The second embodiment In the blank area 71w, 7i = port 92. The lack of π 92 is viewed from the direction of the arrow K. In addition, the absence of π 92 ____ is linear. The gates of the gates of columns D, E, and F can be restricted. In addition, the notch 92 is provided by the §, and the notch 92 can also be used to release heat. The temperature distribution of face 90 is more even. The round shape. In addition, the shape of the square is also shown in Fig. 9. The cross-sectional shape of the force gap % may also be a triangle as shown in Fig. 1A, and the shape of the lJ face is four corners or a triangle. The front end of the notch 92 may exist. 17 201222706 Angle = 'The heat conduction at the corner is not evenly distributed. Conversely, Xiang (4) will be deficient. The cross-sectional shape is set to four corners or triangles, so that the temperature distribution of the surface 9〇 can be flattened at the front end. In this part, the heat conduction tLS is two circles, and the two cross-sectional shapes are set, and the temperature distribution of the silk surface 90 is averaged. Notch % Next, a third embodiment will be described. In addition, the same parts are omitted, and only the different parts are explained. In the sad case, the heaters 71r, 71s are placed in the heat release body at 7fp; that is, the tubular heaters 71r, 71s are taken out to the sputum of the sputum body 71D, and the tube is heated for the heat release Zhao 71P: With respect to the heat radiator 71, the heat is pushed inward, and the white areas 71W and 71Χ become smaller.
使其;用溫度， 測量溫度分布。然後，當例如❹區域71w、J 7!Ρ ’使空白區域71w、71χ變小。然後，在放 eg? 二的溫度分布。反覆該等作SIS 構造;可使放度平均。藉由該等 圓等其他基板的加熱處理。* ’、可廣泛細於半導體晶 【圖式簡單說明】 塗布、歸裝置的概略俯視圖。 理裝置下部的俯視方向的剖面圖。 ^ 4 iti熱處理裝置的側視方向的剖面圖。 圖4係將本㈣之下部面狀加絲的—部分以剖面表示的俯 18 201222706 視圖。 視圖圖5鱗本购之上部破加熱m—部如伽表示的俯 控制本㈣之下㈣狀加_寬度爾職的溫度 滅本發明之下部面狀加熱11的概略剖_ U)、續下邻 ::¾的加熱電力分布圖㈦以及該下部面狀加熱器的2 =係表7F設置在本發明之放熱體上的缺 圖係表示設置在本發明之放熱體上 另0媒 視圖。 研的另一悲樣的俯 圖1G絲祕置在本㈣之放鋪 視圖。 的另一態樣的俯 【主要元件符號說明】 C匣盒 D、E、F列（電力） Dh、Eh、Fh 溫度 63h蓄熱 K箭號 s ' τ、U分割 G基板 X、Y轴 5輥子搬運機構 6框體 7加熱機構 8加熱機構 10匣盒台 11搬運機構 12搬運臂 19 201222706 21準分子UV照射單元（e—UV) 22洗滌洗淨單元（SCR) 23預熱單元（PH) 24疏水單元（AD) 25冷卻單元（COL) 26(26i〜26〇)抗蝕劑塗布單元（CT) 27減壓乾燥單元（DP) 28加熱處理單元（HT) 29冷卻單元（COL) 30顯影單元（DEV) 31加熱處理單元（HT) 32冷卻單元（COL) 35檢査裝置（IP) 43搬運臂 44旋轉台（RS) 50輥子構件 51旋轉軸 52輥子外周圍表面部 60轴承 61基板搬入部 62基板搬出部 63框體内壁 64框體外壁 65空氣隔熱層 66隔熱材 67.排氣口 68排氣裝置 71 (71a〜71〇)下部面狀加熱器（下部面狀加熱部） 71p放熱體 71q〜71s管狀加熱器 20 201222706 71t〜71v溫度感測器 71w、71x加熱電力的空白區域 81 (81a〜81h)上部面狀加熱器（上部面狀加熱部） 81p放熱體 81q管狀加熱器 81t感測器 90表面 91背面 92缺口 101控制裝置 102輸入輸出部 103記憶部 104熱板控制器 105 (105a〜105f)熱板電源 200顯影處理系統 201匣盒站 202塗布處理線程 203介面部 204曝光裝置 205顯影處理線程 21Make it; measure the temperature distribution with temperature. Then, the blank areas 71w, 71 are made smaller, for example, by the ❹ area 71w, J 7 ! Ρ '. Then, put the temperature distribution of eg? Repeat this as the SIS structure; the gradation can be averaged. The heat treatment is performed by other substrates such as the circle. * ‘, can be widely used in semiconductor crystals. [Simplified description of the drawings] A schematic plan view of the coating and returning device. A cross-sectional view of the lower portion of the device in a plan view. ^ 4 iti heat treatment device side view of the cross-sectional view. Fig. 4 is a view showing a portion of the lower portion of the lower portion of the present portion (4) in a section showing a view of the contour of the 18 201222706. View Figure 5 scales to buy the upper part of the broken heating m-parts such as the gamma of the subordinate control (4) under the (four) shape plus _ width of the position of the job under the invention of the lower part of the surface heating 11 outline _ U), continued The adjacent::3⁄4 heating power distribution map (7) and the lower planar heater 2 = series 7F are provided on the heat radiator of the present invention, and the missing pattern is shown on the heat radiator of the present invention. Another sad picture of the research is shown in Figure 1 (4). Another aspect of the bow [main component symbol description] C 匣 box D, E, F column (electric power) Dh, Eh, Fh temperature 63h heat storage K arrow s ' τ, U split G substrate X, Y axis 5 roller Transport mechanism 6 frame 7 heating mechanism 8 heating mechanism 10 cassette table 11 transport mechanism 12 transport arm 19 201222706 21 excimer UV irradiation unit (e-UV) 22 washing and cleaning unit (SCR) 23 preheating unit (PH) 24 Hydrophobic unit (AD) 25 Cooling unit (COL) 26 (26i~26〇) Resin coating unit (CT) 27 Vacuum drying unit (DP) 28 Heat treatment unit (HT) 29 Cooling unit (COL) 30 Development unit (DEV) 31 heat treatment unit (HT) 32 cooling unit (COL) 35 inspection device (IP) 43 transport arm 44 rotary table (RS) 50 roller member 51 rotary shaft 52 roller outer peripheral surface portion 60 bearing 61 substrate loading portion 62 Substrate carrying-out unit 63 frame inner wall 64 outer frame wall 65 air heat insulating layer 66 heat insulating material 67. exhaust port 68 exhaust device 71 (71a to 71〇) lower surface heater (lower planar heating portion) 71p heat release Body 71q~71s tubular heater 20 201222706 71t~71v temperature sensor 71w, 71x heating power blank area 81 (81a to 81h) upper surface heater (upper surface heating unit) 81p heat radiator 81q tubular heater 81t sensor 90 surface 91 back surface 92 notch 101 control device 102 input/output portion 103 memory portion 104 hot plate controller 105 (105a~105f) hot plate power supply 200 development processing system 201 cassette station 202 coating processing thread 203 interface 204 exposure device 205 development processing thread 21