TW201218324A - A process of manufacturing a buried glass silicon substrate - Google Patents

A process of manufacturing a buried glass silicon substrate Download PDF

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Publication number
TW201218324A
TW201218324A TW100110628A TW100110628A TW201218324A TW 201218324 A TW201218324 A TW 201218324A TW 100110628 A TW100110628 A TW 100110628A TW 100110628 A TW100110628 A TW 100110628A TW 201218324 A TW201218324 A TW 201218324A
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Taiwan
Prior art keywords
substrate
glass
glass substrate
concave portion
main surface
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TW100110628A
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Chinese (zh)
Inventor
Ryo Tomoida
Tomohiro Nakatani
Takumi Taura
Shin Okumura
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Panasonic Elec Works Co Ltd
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Application filed by Panasonic Elec Works Co Ltd filed Critical Panasonic Elec Works Co Ltd
Publication of TW201218324A publication Critical patent/TW201218324A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/005—Bulk micromachining
    • B81C1/00507—Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0104—Chemical-mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0125—Blanket removal, e.g. polishing
    • G—PHYSICS
    • G01—MEASURING; TESTING
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    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
    • G01P2015/088—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system for providing wafer-level encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
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  • Pressure Sensors (AREA)
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Abstract

This invention aims to rapidly bury glass while suppress the occurrence of voids. First, a recess 52 is formed in a main face of a silicon substrate body 51. Next, a first main face of a glass substrate 54 is superimposed on the main face of the silicon substrate body 51. Then, the glass substrate 54 is softened by heating and a portion thereof is buried into the recess 52 of the silicon substrate body 51. Subsequently, the glass substrate 54 is cooled. The portion of the glass substrate 54 buried into the recess 52 of the silicon substrate body 51 remains, while other portions are removed. When the portion of the glass substrate 54 is being buried into the recess 52 of the silicon substrate body 51, through holes 53 penetrating through between the inside and outside of the recess 52 are formed.

Description

201218324 六、發明說明： 【發明所屬之技術領域】 本發明係關於在矽基板本體内部配置有玻璃的埋設玻璃的矽 基板之製造方法。 【先前技術】 以往’以製造具有微小結構的玻璃基板之目的而言，已知有 例如專利文獻1所記載的技術。 、專^文獻1所記載的由玻璃材料所構成的平坦基板之製造方 法中，"5先於平坦的矽基板表面形成凹處，並將矽基板有凹處形 ^的面噓合至平坦的玻璃基板。然後，加熱玻璃基板藉以將玻璃 ，板的一部分埋設於此凹處之中。其後，使玻璃基板重新固化， 並研磨平坦基板的正反面，去除石夕。 [習知技術文獻] [專利文獻1]曰本特表2004 —523124號公報(尤其參照第1 圖） 【發明内容】 [發明所欲解決的問題] 但疋，將矽基板有凹處形成的面疊合至平坦的玻璃基板時， 3的内部空，成封閉空間。所以，在將玻璃基板的一部分埋 之中時，凹處内部的氣體不易茂出，在玻璃的埋設步 ，成為製程時間縮短之障礙。又，重新固化的玻璃材 料谷易產生氣泡，將使得製造成品率降低。 域日2，#於上述問題點，目的在於提供—種能迅速埋設玻 离且抑制軋泡產生之埋設玻璃的矽基板之製造方法。 [解決問題之技術手段] 之制ίΐί上述目的之本發明，其特徵係關於埋設玻璃的雜板 驟二仏+法。此製造方法至少包含第1步驟〜第5步驟。第1步 ‘，在矽基板本體之主面形成凹部。第2步驟中，準備具有加 201218324 厚部係與該凹部位置相對，並使玻璃基板之 中Λ献=二f土板本體之主面，將凹部予以密閉。第3步驟 中’加熱玻璃基板使其軟化，⑯此玻璃基板 之間的貝穿孔。第4步驟中，冷卻玻璃基板。第5步驟中 玻璃基板之憎設於絲板本體凹部的部分，去除其他 [發明之效果] 依據本發明之埋設__基板之製造方法，在 於凹部時，因為凹部内部的氣體通過貫穿孔 迅速地埋設玻璃，且能抑制氣泡。 所以月匕 【實施方式】 以下參照圖式說明本發明之實卿態。_記載巾，相 分標註相同元件符號。 (第1實施形態） 參照圖1(a)及圖1(b)說明本發明第]實施形態之半導體 概略構成。半導體裝置包含：加速度感測晶片A，作為元 件的一例；控制1C晶片B，形成有信號處理電路，處理從加速度 感測晶片A輸出的信號；以及表面黏著式封裝】〇1，收容有加^ 度感測晶片A及控制1C晶片B。 、 封裳101包含：塑膠封裝本體1〇2，具有在圖啊之中位於上 面的一面為開放的箱形形狀；以及封裝蓋(lid)1〇3，將封裝1〇1'的 開放面予以封閉。塑膠封裝本體102包含電性連接於加^度感測 晶片A及控制1C晶片B的多數引線112。各引線112包含：外部 引線112b ’從塑膠封裝本體1〇2的外側面導出；以及内部引線" 112a，從塑膠封裝本體102的内側面導出。各内部引線ma經由 接合線W而電性連接於控制:[c晶片B所具有的各接點。 加速度感測晶片A藉由配置在依據加速度感測晶片A之外周 形狀而規定的虛構三角形之3個頂點所對應的3處之黏接部1〇4, 固接在位於塑膠封裝本體102底部的搭載面i〇2a。黏接部1〇4係201218324 VI. [Technical Field] The present invention relates to a method of manufacturing a ruthenium substrate in which glass is embedded in a ruthenium substrate body. [Prior Art] For the purpose of producing a glass substrate having a minute structure, for example, a technique described in Patent Document 1 is known. In the method of manufacturing a flat substrate made of a glass material described in Document 1, "5, a recess is formed on the surface of the flat ruthenium substrate, and the surface of the ruthenium substrate having a concave shape is flattened to a flat surface. Glass substrate. Then, the glass substrate is heated to embed a portion of the glass and the plate in the recess. Thereafter, the glass substrate is re-solidified, and the front and back surfaces of the flat substrate are polished to remove the stone eve. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Publication No. 2004-523124 (see especially FIG. 1) [Disclosure] [Problems to be Solved by the Invention] However, the base of the crucible is formed by a recess. When the surface is superposed on a flat glass substrate, the interior of the 3 is empty and becomes a closed space. Therefore, when a part of the glass substrate is buried, the gas inside the recess is not easily exposed, and the step of embedding the glass becomes an obstacle to shortening the processing time. Further, the re-solidified glass material is likely to generate bubbles, which will lower the manufacturing yield. In the above-mentioned problem, the purpose of the present invention is to provide a method for manufacturing a tantalum substrate capable of rapidly embedding glass and suppressing the occurrence of blistering. [Technical means for solving the problem] The present invention, which is characterized by the above-mentioned object, relates to a method of embedding a glass in a slab. This manufacturing method includes at least the first step to the fifth step. Step 1 ‘, a concave portion is formed on the main surface of the 矽 substrate body. In the second step, the thick portion of the 201218324 portion is placed opposite to the concave portion, and the main surface of the glass substrate is placed in the glass substrate, and the concave portion is sealed. In the third step, the glass substrate is heated to soften, and the perforation of the glass between the glass substrates is 16 . In the fourth step, the glass substrate is cooled. In the fifth step, the portion of the glass substrate is disposed in the concave portion of the core portion of the core plate, and the other effects of the invention are removed. According to the method of manufacturing the embedded substrate of the present invention, in the case of the concave portion, the gas inside the concave portion passes through the through hole rapidly. Embed glass and suppress bubbles. Therefore, the present invention will be described below with reference to the drawings. _ Record the towel, and mark the same component symbol. (First Embodiment) A schematic configuration of a semiconductor according to a first embodiment of the present invention will be described with reference to Figs. 1(a) and 1(b). The semiconductor device includes: an acceleration sensing wafer A as an example of an element; a 1C wafer B, a signal processing circuit for processing a signal output from the acceleration sensing wafer A; and a surface-adhesive package 〇1, which is accommodated with a ^ The wafer A is sensed and the 1C wafer B is controlled.封裳101 comprises: a plastic package body 1〇2, having an open box shape on the upper side of the figure; and a lid 1〇3, which is to open the open surface of the package 1〇1' Closed. The plastic package body 102 includes a plurality of leads 112 electrically connected to the sense sensing wafer A and the control 1C wafer B. Each of the leads 112 includes an outer lead 112b' that is led out from the outer side of the plastic package body 1A2, and an inner lead " 112a that is led out from the inner side of the plastic package body 102. Each of the internal leads ma is electrically connected to the control via the bonding wire W: [c) Each contact of the wafer B. The acceleration sensing wafer A is fixed to the bottom of the plastic package body 102 by three bonding portions 1〇4 disposed at three vertices corresponding to the imaginary triangles defined by the outer shape of the acceleration sensing wafer A. Mounting surface i〇2a. Bonding part 1〇4

S 4 201218324 由-體相連於塑膠封裝本體搬而伸出設置的 以及包覆此突紗的黏接綱構成。黏接_ =犬起部 IMPa以下的矽酮樹脂等矽酮系樹脂構成。 卓性杈數在 在此，加速度感測晶片A具有的所有接點， f配置在加速度感測晶片A之主面，面向塑膠封裝的1 放面。黏接部1〇4係位於頂點在此J邊兩端的)-、之開 於该1邊的邊上1處位置⑽σ中央部)共3處位置I— ϋ平仃 邛1〇4的位置而§，平行於該丄邊的邊 就钻接 例如亦可為兩端之—，但中央部t =定部， 且將接合線W穩定接合於各接點。 Μ料導體讀A並 控制1C晶片B係半導體晶片，由下者槿 ，的半導體基板上戦的乡料導體 栌制^及曰^半賴凡件或配線防止外部環境之保護膜。並且， 設計因應於加速度_晶以之魏，並要= 同運作即可。例如可將控制IC晶片B “ mA協 SpecificIC，特殊應用積體電路）。4為纖(Appllcatlon 測曰半導體裝置時’首先進行黏晶步驟，將加速度感 “B固接於塑料裝本體搬。並且進it 押制匕刀別將加速度感測晶片A與控制IC晶片B之間、 ?與内部引線⑽之間，經由接合線W而電性連接。 裝ίίΐ覆部形成步驟，形成樹脂被覆部116，其次進行封 ίί封:Ϊ裝雄d)103的外周接合於塑膠封裝本體102。藉此， 適^邻二，102的内部封閉在氣密狀態。另，於封裝蓋103的 &等$猎由雷射標記技術形成有標示113,顯示製品名稱或製造 測曰^ 於控制IC晶片b使用1片石夕基板而形成，加速度感 …曰片A係使用疊層的錄基板而形成。所以，因為加速度感測 201218324 I 士的厚度大於控制IC晶片B的厚度，令塑膠封裝本體ι〇2 氐部格載加速度感測晶片A的搭載面1〇2a凹於控制IC晶片B的 ί載部位。因此，就塑膠封裝本體102的底面而言，搭載加速度 感測晶片Α的部位，厚度薄於其他部位。 ^再者，本發明之第丨實施形態中將塑膠封裝本體1〇2的外形 =為直曰方體，但此僅為一例，只要因應於加速度感測晶片A或控 1 IC/a片B的外形、引線]12的數量或間距等等而適當設定即可。 匕就塑膠封裝本體1〇2的材料而言，使用一種身為熱可塑性樹 脂且氧或水蒸氣的穿透率極低的液晶性聚酯(LCP)。但並不限於 ，亦可採用例如聚苯硫fel(PPS)、聚雙醯胺三峻(pbt)。 又，，各引線112的材料，亦即作為各引線112基礎的引線 框^料而言，採關合金之中彈性高_青銅。在此，就引線框 =a、’使用材質為碟青銅且板料〇2mm的引線框，並利用電解 电鍍法形成由厚度為2μιη〜4μπι的Ni膜以及厚度為〇.2μιη〜〇.3μ I的膜之疊層膜所構成的電鑛膜。藉此，能兼顧打線接合的接 二可靠度與贿可靠度。又，熱可齡翻旨顧彡^的塑膠封裳本 1〇2有引線112同時一體成形。但是，利用熱可塑性樹脂之Lcp 而形成的塑膠封裝本體1〇2與引線112的八^以莫之間密接性低。所 以’在上述引線框之中埋設於塑膠封裝本體1〇2的部位設置衝 藉以防止各引線112脫落。 又，圖1的半導體裝置設有樹脂被覆部116，包覆在内部引線 112a的露出部位及其周圍。樹脂被覆部】16例如由胺系 脂 等環氧系樹脂等非透水性樹脂所構成。在打線接合步驟之後使用 分配器來塗佈此非透水性樹脂，使其硬化，藉以提升氣密性。另， 亦可使用陶兗材料代替此非透水性樹脂，使用陶兗材料時，只 利用電漿熔喷等技術予以局部性喷吹即可。 a 一又，就接合線w而言，使用抗蝕性高於A1線的Au線。又， 採直徑25_的Au線，但不限於此，只要從例如直徑為 5〇μιη的八^線之中適當選擇即可。 馬Vm 以下參照圖2說明圖1的加速度感測晶片a的概略構成。加S 4 201218324 is composed of a body attached to the plastic package body and extended and covered with the protrusion. Bonding _ = canine part The ketone-ketone resin such as an anthrone resin below IMPa is composed. Here, all the contacts of the acceleration sensing wafer A are disposed on the main surface of the acceleration sensing wafer A, facing the surface of the plastic package. The bonding portion 1〇4 is located at the apex at the ends of the J side, and the position at the 1 position (10) σ central portion on the side of the 1 side is a total of 3 positions I—the position of the ϋ平仃邛1〇4 §, the side parallel to the rim can be drilled, for example, at both ends, but the central portion t = fixed portion, and the bonding wire W is stably joined to each of the contacts. The material conductor reads A and controls the 1C wafer B-type semiconductor wafer, and the semiconductor material on the semiconductor substrate of the following is used to make a protective film for the external environment. Moreover, the design is adapted to the acceleration _ crystal to the Wei, and to = the same operation. For example, the control IC chip B "mA Co-SpecificIC, special application integrated circuit" can be used. 4 is a fiber (Appllcatlon is used to measure the semiconductor device first), and the acceleration feeling "B is fixed to the plastic body." The charging blade is electrically connected between the acceleration sensing wafer A and the control IC wafer B, and between the inner leads (10) via the bonding wires W. The mounting portion is formed to form the resin coating portion 116. Then, the outer periphery of the sealing member 103 is bonded to the plastic package body 102. Thereby, the interior of the adjacent two, 102 is enclosed in an airtight state. In addition, the package cover 103 & or the like is formed by the laser marking technology with a mark 113, the display product name or the manufacturing test is formed on the control IC wafer b using one piece of stone substrate, the sense of acceleration... It is formed using a laminated recording substrate. Therefore, since the thickness of the acceleration sensing 201218324 I is greater than the thickness of the control IC wafer B, the mounting surface 1〇2a of the plastic package body ι2 is mounted on the control IC wafer B. Part. Therefore, in the bottom surface of the plastic package body 102, the portion where the acceleration is sensed by the wafer is mounted, and the thickness is thinner than the other portions. Further, in the third embodiment of the present invention, the outer shape of the plastic package body 1〇2 is a rectangular cube, but this is only an example, as long as the wafer A or the control IC/a sheet B is sensed in response to the acceleration. The shape, the number of the leads 12, the pitch, and the like can be appropriately set.匕 For the material of the plastic package body 1〇2, a liquid crystalline polyester (LCP) which is a thermoplastic resin and has a very low transmittance of oxygen or water vapor is used. However, it is not limited to, for example, polyphenylene sulfide (PPS) or polybenzamide tribene (pbt). Further, the material of each of the leads 112, that is, the lead frame which is the basis of each of the leads 112, is high in elasticity and bronze in the alloy. Here, the lead frame = a, 'a lead frame made of a material of a plate bronze and a sheet of 〇 2 mm is used, and a Ni film having a thickness of 2 μm to 4 μm is formed by electrolytic plating and the thickness is 〇.2 μιη to 〇.3 μ. An electric ore film composed of a laminated film of a film. Thereby, the reliability and bribe reliability of the wire bonding can be taken into consideration. In addition, the hot-skinned squad is the plastic seal of the 彡^, and the 1122 has the lead 112 formed at the same time. However, the adhesiveness between the plastic package body 1〇2 formed by the Lcp of the thermoplastic resin and the lead 112 is low. Therefore, a portion of the lead frame embedded in the plastic package body 1 2 is provided with a recess to prevent the leads 112 from coming off. Further, the semiconductor device of Fig. 1 is provided with a resin covering portion 116 so as to cover the exposed portion of the inner lead 112a and its surroundings. The resin coating portion 16 is made of, for example, a water-impermeable resin such as an epoxy resin such as an amine resin. The water-impermeable resin is applied by a dispenser after the wire bonding step to harden it, thereby improving airtightness. Alternatively, a ceramic material may be used instead of the water-impermeable resin. When a ceramic material is used, it may be partially sprayed by a technique such as plasma melt blowing. a Again, in the case of the bonding wire w, an Au wire having a higher corrosion resistance than the A1 wire is used. Further, the Au line having a diameter of 25 mm is used, but the shape is not limited thereto, and may be appropriately selected from, for example, an octagonal line having a diameter of 5 μm. Horse Vm A schematic configuration of the acceleration sensing wafer a of Fig. 1 will be described below with reference to Fig. 2 . plus

S 6 201218324 速度感測晶片A為靜電電容式加速度感測晶片，並包含：感測器 本體1，使用SOI(SiliconOnInsulator，絕緣矽晶)基板1〇形成； 第1固定基板2 ’使用玻璃基板20形成；第2固定基板3，使用 玻璃基板30形成。第1固定基板2固接於感測器本體1的一表面 側(圖2之中的上面側）’第2固定基板3固接於感測器本體i另一 表面側(圖2之中的下面側）。第1及第2固定基板2、3形成與 測裔本體1相同外形尺寸。 另，圖2分別顯示感測益本體1、第1固定基板2及第2固定 f板3的構成，且顯示感測器本體i、帛i固定基板2及第2 =3成分離的狀態。又，感測器本體i不限於s〇i基板1〇，亦 =用，不具有絕緣層的普通石夕基板形成。又，第i及第2固 疋I則、用板及玻璃基板之中的何者形成均無妨。 傭ΐΓ體包含，部1卜沿著上述—表面麟設置有2 ί 幵個俯視矩形的疊合部13，配置在框部 部11與疊合部 自成對的支持彈菁:14: 2個俯視矩形的疊合部13配置為分別盥 在面向第1固絲板2的各4合部13之主面 配置有可動電極^⑽。包 之王由上刀別 2固定基板2、3、構成容納疊合^133 = η與第1及第 封裝。 I J及後述固定子16的晶片尺寸 成對的支持彈簧部14在框部 更部I4係能扭轉變形的扭力彈i 的形式。各支持彈 疊合部13，疊合部13能藉 2 ^奉），形成為薄於框部11及 於框部11扭變。 由成對的支持彈簧部14之旋轉而相對 在感測器本體1的框部]〗， 设有分別連通於各開口窗 Λ個開口窗12同方向，.並排 内側，分別沿著成對支持彈^俯窗孔17。在各窗孔Π的 早^ 14的並棑設置方向配置有2個固 201218324 定子16。 各固定子16與窗孔17内周面之間、各固定子化録 外周面之間、以及相鄰固定子16之間，分卿成有 離獨立而電性絕緣。各固定子16分別接合於第丨及 刀 2、3。又，在感測器本體1的一表面側，各固定子％ 由Al-Si膜等金屬薄膜構成的圓形電極接點18。又， α 相鄰窗孔17之間的部位同樣也形成有例如自Α】 °越 構成的圓形電極接點1.8。 联寺I屬溥膜 ^各固定子16形成的各電極接點18，分別電性連接於後述各 固疋電極25 ’於框部Η形成的電極接點18，電性連接於可動 Ϊ =及可動電極15Β。以上說明的多數電極接點18係沿著加速 度感測晶片Α的矩形外周形狀的1邊配置。 ' 第1固定基板2包含：多數配線28，貫穿於第‘丨 之第1主面及其相反的第2主面(疊合到感測器本體 & 以及多數固定電極25，形成於第2主面上。 ）之間， 固定電極25知及固定電極MAb配置為成對並與可動雷 固定_2伽及固定電極现同樣配置為成對並與 成。δ 5B相對。各固定電極μ例如由Α1_&膜等金屬薄膜^ 哭本套第點的第2主面分別電性連接於感測 接 猎此’能分別經由電極接點18而將各固 部。° 、立及可動電極15的電位讀出加速度感測晶片Α外 人邮定基板3的—表面(4合至感·本體1的面)且與疊 防止目的Λ置配置有例如由A】'Si膜等金屬薄膜所構成的 情妒。、。付者防止膜35防止扭變的疊合部1.3產生附著之 加速跡㈣面構成。圖 度感测平黃部M之直線成垂直的剖面之中的加速 'aa 1 籌成。感測器本體1使用SOI基板1〇形成。s〇l 201218324 ίί :支持基板版，由單結晶碎構成；絕緣層10b，配 ^在^持基板10a之上，由氧化頻構成；以及石 ， 為η型’配置在絕緣層i〇b之上。 f=本體i之中’框部η及固定子16接合於第i固定基 板^弟2固定基板3。相對於此，4合部13配 3 基板2、3分離’並藉由成對的支持彈簧部14]而'^ 在框部11。 ^在疊合部13分別與第1及第2固定基板2、3相對之面 出設置有限制疊合部13過度扭變的多數微小突起部Uc。燕 13形成有矩形開口的凹部13a、13b。因為凹部⑶ m所以疊合部mx通過賴的支娜*部M之 左右的質量不同。 一第1固定基板2的配線28電性連接於電極接點18。電極接點 固定子16、銜接用導體部16d、金屬配線26而連接於固定 上述加速度感測晶片A，具有4對由設於感測器本體丨的 動電極15與設於第1固定基板2的固定電極25所結合的對㈣ 每個可動電極15與固定電極25所結合的對構成可變容量電容。 當加速度施加於加速度感測晶片A，即疊合部13時，支持彈簧 14扭轉，豐合部13扭轉。因此，成對的固定電極25與可動電極 15之間的相向面積及間隔改變，而可變容量電容的靜電電容改 變。所以，加速度感測晶片A能依據此靜電電容的改變來偵測加 速度。 、 其次參照圖4(a)〜圖4(e)說明作為在圖2及圖3所示的第！ 固定基板2'之形成時所用的玻璃基板2〇的一例而言的埋設 石夕基板之製造方法。 ’ (甲）首先如圖4(a)所示，先準備具有相反對之正面(圖4之中 的上面)及背面（圖4之中的下面)之矽基板本體51。整個矽基板本 體51添加有P型或η型不純物，矽基板本體51的電阻非常小。 另，在此係說明整個矽基板本體51添加不純物之情況，但亦可不 201218324 \ · 是添加至整個矽基板本體51。只要 ==部分之深度即可。並:呦 性離子姓刻_等絲刻，選擇性去除石夕基^體^ 區域’在石夕基板本體51正面形成凹部52(第i步 、2 RJE等異向性触刻選擇性去除凹部52底面 g 52底面與蝴M51㈣面之_丨或2^上成貝穿 於凹部52底面與矽基板本] 穿孔53。 其次如圖4⑻所示’將玻璃基板之第1主面(圖4之中的 )噠。到矽基板本體51的正面，將凹部52予以 、 ，）。加熱玻璃基板54，使玻魅板54的溫度上升直 二 ^並且爛4_示，將已軟化的_練Μ的―^分 石:基板本體51的凹部52(第3步驟)。另，第；J j 參照圖5及圖6而後述。 平、、.田私序將 (丙)冷卻玻璃基板54使其重新固化(第4步驟）。 =所示留下玻璃基板54之中埋設在石夕基板本體^二= =，去除其他部分(第5步驟）。X，留下石夕基板本體51之中位 正面與包含凹部52底面的平面之間的部分，去除其他呷分。 箄研由使用鑽石磨輪進行研削、化學機械研磨(^) f研磨’或RIE等乾蚀刻與HF之濕姻等方法，均句削 J ^ 54的第2主面(圖4之中的上面），使玻璃基板54 ‘ 2玻主面 路出於矽基板本體51。同樣使用研削、研磨或蝕刻等方法， =石夕基板本體51的背面，使埋設在凹部52的玻璃基板％在秒 土板本體51的背面露出。先去除玻璃或石夕之中的何者均無妨。 利用以上步驟製造的埋設玻璃的矽基板，如圖4卜)所^，係 在石夕基板本體51埋設有玻璃基板54的一部分。所以，將圖4(ej 的矽基板本體51的部分當成圖2及圖3所示的配線烈，將圖 的玻璃基板54部分當成圖2及圖3所示的玻璃基板2〇。藉此，可 將圖4(e)所示的埋設玻璃的矽基板應用於形成圖2及圖3所示的 第1固定基板2時所用的玻璃基板20。 ’、 10 201218324 二⑻，二=:=== 51^^,j ^ 3 e, , yJ；m ° ^ 本體料部之間的貫穿孔53即可，貝穿方⑽52内部與石夕基板 具體= 所示第3步驟之 狀的真空吸爪平台3〇6乃 不匕表1^裝置，包含同為平板 破域其献y ®人口 口…•力口壓爽具307 0石夕基板本體51與 之間Γ S 5配置在真空吸爪平台306與加熱•加塵央具307 載置Ϊ空ί由不鏽鋼構成，於面㈣基板本體51的 戰置面具有用於進行真空吸抽的1或2個以上的 之間，為了防止漏氣，沿著石夕基板本體51的 ^ 七305。將省略圖示的旋轉栗等真空泵之排氣口 306的3〇6的孔。使用此真空粟，從真空吸爪平台 行排氣。<、空吸抽時’能對於貫穿孔53及凹部52内的氣體進 —具3Q7包含_玻璃基板54加熱的加熱器309 4加熱栈構，能同時對於玻璃基板54加熱與施力。 圖5(b)所示裝置亦為用於實施第3步驟之具體 =:相較於圖5⑻的裝置而言，差異點在於使用由陶構 成的夕孔吸頭平台308代替真空吸爪平台3〇6。於多孔吸頭平台 情况下’係從多孔質的顆粒間隙進行真空吸抽。又，為了〇防 止氣體洩漏，沿著矽基板本體51的側面配置有真空洩漏防止呈 310來代替〇型環3〇5。 ” 其次，參照圖6說明使用圖5(a)及圖5(b)所示製造裝置而谁杆 的第3步驟之詳細程序。 (壹）將矽基板本體51與玻璃基板54疊合配置於真空吸爪平 201218324 台306與加熱.加壓夾具3〇7之間。使用真空栗從真空吸爪平a 53 52 ^ 軋虽矽基板本體51與玻璃基板54之間氣密性相當高時，貫穿 =53及凹部52不易有氣體進入。藉此，玻璃基板54及石夕基板本 體51被吸附在真空吸爪平台3〇6(s〇1)。 “ ^ 增段中，打開加熱器3〇9的開關，加熱玻璃基板 ’彳玻璃基板54的溫度上升直到其軟化溫度為止後，宜臣t 視玻璃基板54之溫度並且控制加熱器3G9 _關而轉軟化溫 度。例如lempax®玻璃之情況只要加熱直到82〇〇c附近為止S 6 201218324 The speed sensing wafer A is a capacitive acceleration sensing wafer, and includes: a sensor body 1 formed using an SOI (Silicon On Insulator) substrate 1 ;; a first fixed substrate 2 ′ using a glass substrate 20 The second fixed substrate 3 is formed using the glass substrate 30. The first fixed substrate 2 is fixed to one surface side of the sensor body 1 (upper side in FIG. 2). The second fixed substrate 3 is fixed to the other surface side of the sensor body i (in FIG. 2 Below the side). The first and second fixed boards 2, 3 are formed in the same outer dimensions as the body 1 of the subject. In addition, Fig. 2 shows the configuration of the sensor body 1, the first fixed substrate 2, and the second fixed f plate 3, respectively, and shows the state in which the sensor body i, the 固定i fixed substrate 2, and the second = 3 are separated. Further, the sensor body i is not limited to the s〇i substrate 1 〇, and is formed using a common slab substrate having no insulating layer. Further, it is possible to form any of the first and second fixings I and the plate and the glass substrate. The servant body includes, in the above-mentioned surface layer, 2 ί 叠 叠 叠 俯视 俯视 俯视 俯视 俯视 俯视 俯视 : : : : 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 The overlapping portion 13 having a rectangular shape in plan view is disposed such that the movable electrode (10) is disposed on the main surface of each of the four joint portions 13 facing the first fixing plate 2, respectively. The king of the package is fixed by the upper blade 2, 2, and 3, and is configured to accommodate the laminated ^133 = η and the first and first packages. I J and the wafer size of the stator 16 described later. The pair of supporting spring portions 14 are in the form of a torsion bomb i that can be torsionally deformed in the frame portion I4. Each of the supporting elastic stacking portions 13 and the overlapping portion 13 can be formed to be thinner than the frame portion 11 and to be twisted by the frame portion 11. The pair of supporting spring portions 14 are opposite to each other in the frame portion of the sensor body 1 respectively, and are respectively connected to the opening windows 12 in the same direction, and are arranged side by side, respectively, and supported in pairs The bullet holes 17 are lowered. Two solid 201218324 stators 16 are disposed in the direction of the opening of each of the apertures 早 14 . Each of the stators 16 and the inner peripheral surface of the window hole 17, between the outer peripheral surfaces of the fixed sub-recordings, and between the adjacent stators 16 are electrically insulated from each other. Each of the stators 16 is joined to the second and second blades 2, 3. Further, on one surface side of the sensor body 1, each of the stators has a circular electrode contact 18 made of a metal thin film such as an Al-Si film. Further, the portion between the adjacent windows 17 of the α is also formed with a circular electrode contact 1.8 which is formed, for example, from the 。 °. Each of the electrode contacts 18 formed by each of the yokes and the respective stators 16 is electrically connected to the electrode contacts 18 formed in the frame portion 后 of the solid-state electrodes 25 ′ described later, and is electrically connected to the movable Ϊ = and The movable electrode 15 is. The plurality of electrode contacts 18 described above are arranged along one side of the rectangular outer peripheral shape of the wafer raft for acceleration. The first fixed substrate 2 includes a plurality of wirings 28 that penetrate the first main surface of the first 丨 and its opposite second main surface (overlapped to the sensor body & and a plurality of fixed electrodes 25, formed in the second Between the main faces, the fixed electrode 25 knows that the fixed electrodes MAb are arranged in pairs and are fixed in the same manner as the movable ray fixing _2 and the fixed electrodes are now arranged in pairs. δ 5B is relative. Each of the fixed electrodes μ is electrically connected to the second main surface of the first point of the metal film, such as a Α1_& film, and is electrically connected to the sensing contact, respectively, and the respective solid portions can be respectively connected via the electrode contacts 18. The potential of the vertical and movable electrodes 15 is read out from the surface of the external sensing substrate 3 (the surface of the external substrate 3 is connected to the surface of the sensing body 1), and is disposed, for example, by A]'Si. A film made of a metal film such as a film. ,. The payer preventing film 35 prevents the twisted portion 1.3 from being attached to the accelerating trace (four) plane. The image senses the acceleration of the straight line of the flat yellow portion M into a vertical section 'aa 1 preparation. The sensor body 1 is formed using an SOI substrate 1 . S〇l 201218324 ίί : support substrate plate, composed of single crystal pieces; insulation layer 10b, which is arranged on the substrate 10a, composed of oxidation frequency; and stone, n-type 'disposed on the insulation layer i〇b on. f = the frame portion η and the stator 16 of the body i are joined to the fixed substrate 3 of the i-th fixed substrate. On the other hand, the four-part portion 13 is separated from the three substrates 2, 3 by the pair of support spring portions 14 and is in the frame portion 11. A plurality of minute projections Uc that restrict excessive deformation of the overlapping portion 13 are provided on the surface of the overlapping portion 13 facing the first and second fixed substrates 2, 3, respectively. The ridge 13 is formed with recesses 13a, 13b having rectangular openings. Because of the recess (3) m, the mass of the overlap portion mx passing through the branch portion M is different. The wiring 28 of the first fixed substrate 2 is electrically connected to the electrode contact 18. The electrode contact stator 16 , the connecting conductor portion 16 d , and the metal wiring 26 are connected to the acceleration sensing wafer A, and have four pairs of the movable electrode 15 provided on the sensor body 与 and the first fixed substrate 2 . Pairs of fixed electrodes 25 are bonded to each other. (4) The pair of movable electrodes 15 and fixed electrodes 25 are combined to form a variable capacitance. When the acceleration is applied to the acceleration sensing wafer A, i.e., the overlapping portion 13, the supporting spring 14 is twisted, and the converging portion 13 is twisted. Therefore, the opposing area and interval between the pair of fixed electrodes 25 and the movable electrode 15 are changed, and the capacitance of the variable capacity capacitor is changed. Therefore, the acceleration sensing wafer A can detect the acceleration based on the change in the electrostatic capacitance. 4(a) to 4(e) will be described as the first shown in Figs. 2 and 3! A method of manufacturing a slab substrate is exemplified as an example of the glass substrate 2 used for forming the fixed substrate 2'. First, as shown in Fig. 4(a), the substrate body 51 having the opposite front side (the upper side in Fig. 4) and the back side (the lower side in Fig. 4) is prepared. The P-type or n-type impurity is added to the entire ruthenium substrate body 51, and the electric resistance of the ruthenium substrate body 51 is extremely small. In addition, in this case, the case where the entire ruthenium substrate body 51 is added with impurities is described, but it may be added to the entire ruthenium substrate body 51 without 201218324. As long as the depth of == part. And: the 离子 离子 ion 姓 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 52 bottom surface g 52 bottom surface and butterfly M51 (four) surface _ 丨 or 2 ^ upper into the bottom of the concave portion 52 and the 矽 substrate this] perforation 53. Next, as shown in Figure 4 (8) 'the first main surface of the glass substrate (Figure 4 In the front side of the substrate body 51, the concave portion 52 is given. The glass substrate 54 is heated so that the temperature of the glass plate 54 rises by a factor of two and is smeared, and the softened _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Further, the term J J will be described later with reference to FIGS. 5 and 6 . The flat glass substrate 54 is cooled (step 4). = shown left in the glass substrate 54 buried in the stone substrate body ^ 2 = =, remove the other parts (step 5). X, leaving a portion between the front surface of the stone substrate body 51 and the plane including the bottom surface of the concave portion 52, and removing other points.箄 由 由 由 由 由 由 由 由 由 由 由 由 由 由 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石The glass substrate 54' 2 glass main surface is made of the substrate body 51. Similarly, the back surface of the stone substrate body 51 is exposed by a method such as grinding, polishing, or etching, so that the glass substrate % embedded in the concave portion 52 is exposed on the back surface of the second earth plate body 51. It is fine to remove any of the glass or the stone eve. The ruthenium substrate in which the glass is buried by the above steps is as shown in Fig. 4, and a part of the glass substrate 54 is embedded in the shishan substrate body 51. Therefore, the portion of the ruthenium substrate body 51 of Fig. 4 is shown as the wiring shown in Figs. 2 and 3, and the glass substrate 54 of the figure is formed as the glass substrate 2 shown in Fig. 2 and Fig. 3. The glass-embedded germanium substrate shown in FIG. 4(e) can be applied to the glass substrate 20 used to form the first fixed substrate 2 shown in FIGS. 2 and 3. ', 10 201218324 2 (8), 2 =:== = 51^^,j ^ 3 e, , yJ;m ° ^ The through hole 53 between the body parts can be used, and the inside of the shell (10) 52 and the stone substrate are specific = the vacuum claw of the third step is shown Platform 3〇6 is not the device of Table 1^, including the same plate breaking domain, its y ® population mouth...•力口压爽具307 0石夕 substrate body 51 and between ΓS 5 is arranged in the vacuum suction claw platform 306 and heating/dusting implement 307 Mounting hollow ί is made of stainless steel, and the surface of the substrate (4) substrate body 51 has between 1 or 2 or more for vacuum suction, in order to prevent air leakage, along the way The seventh 305 of the slab substrate body 51 is omitted. The hole of the exhaust port 306 of the vacuum pump such as the rotary pump is not shown, and the vacuum is used. "Exhaust gas." When air suction is applied, the gas inlet 3Q7 in the through hole 53 and the recess 52 can be heated by the heater 309 4 heated by the glass substrate 54 to heat the glass substrate 54 at the same time. The device shown in Fig. 5(b) is also used to carry out the third step. =: Compared with the device of Fig. 5 (8), the difference is that the vacuum suction claw platform 308 is used instead of the vacuum suction claw. Platform 3〇6. In the case of a porous tip platform, vacuum suction is performed from the porous particle gap. Further, in order to prevent gas leakage, a vacuum leakage prevention 310 is disposed along the side of the crucible substrate body 51 instead. 〇-type ring 3〇5. ” Next, a detailed procedure of the third step of using the manufacturing apparatus shown in Figs. 5(a) and 5(b) will be described with reference to Fig. 6. (壹) 矽 substrate body 51 and The glass substrate 54 is superposed between the vacuum suction claw flat 201218324 306 and the heating and pressing clamp 3 〇 7. The vacuum pump is used to draw the vacuum from the vacuum claw a 53 52 ^ while the 矽 substrate body 51 and the glass substrate 54 are pressed. When the airtightness is relatively high, it is difficult for gas to enter through the through-53 and the recess 52. The glass substrate 54 and the Shishi substrate body 51 are adsorbed on the vacuum claw platform 3〇6 (s〇1). “ ^ In the extension section, the switch of the heater 3〇9 is turned on, and the temperature of the glass substrate 彳 glass substrate 54 is heated. After rising until its softening temperature, Yichen looks at the temperature of the glass substrate 54 and controls the heater 3G9 to turn off and soften the temperature. For example, in the case of lempax® glass, it is heated until it is near 82〇〇c.

(參）於S05階段中，使用加熱•加壓夾具3〇7 54 51 0 ^ s〇1 A J 段的加熱處理’以及S05階段的衝壓處理，使得已軟化的玻 板54的一部分被埋設於矽基板本體51的凹部52(第3步驟 (^)於S07階段中’凹部52之中被已軟化的玻璃基板％所 充真時’進入S09階段，停止驅動真空栗，解除基 =54的真空吸爪。其後’於sn階段關卿 關，並使用既定的冷卻機構冷卻玻璃基板54。 如此’使用圖5(a)及圖冲)所示的製造裝置實施第3步 已軟化的玻璃基板54的一部分埋設於矽基板本體51之凹 圖4之中的第3步驟至少包含圖6之中的s〇3〜S()7階段。° 另’以上係顯示藉由真空壓力來實現將玻璃基板％與 及固定之情況，但不限於此，可藉由陽極接i、 表面活性化、纟。σ、樹脂黏接等方法來接合亦無妨。藉此，古 矽基板本體51與玻璃基板3〇4之間疊合面的氣密性。 门 又，為了將已軟化的玻璃基板54的一部分埋設於石 5]的凹部52，而玻璃本身重量及真空壓力造成的力量為^足, ，可不進行圖6的SG5階段之衝壓處理。例如，藉|由提璃 板54的溫度而降低玻璃基板54的錄。此時，即使省略p 也能藉诚线及玻縣賴4机軟化的麵基板 <^刀埋没於凹部52。另，將玻璃基板54與石夕基板本體5ι的配置 201218324 予\貞〗如夕基板本體51本身重量代替玻璃本身重量。 51 W 已軟化的玻璃基板54的一部埋設於矽基板本體 々凹。卩52,而破璃本身重量造成的力量為充足時，不單是衝屙 處理，即使省略真空吸抽構亦無妨。 土 μ ΐ圖6中’交換S〇9階段與SU階段的實施順序亦益 :二先關閉加熱器309的開關，並使用既定的冷卻機 及i二;te 。其後，停止驅動真空泵，解除碎基板本體51 及破％基板54的真空吸爪。 果。士 乂上^兒月，依據本發明第i實施形態，能獲得以下作用效 在實施將玻璃埋設於凹部52的圖4之第 =，部52内部與絲板本體51外部之間的貫穿孔幻。以貫 口 =在將玻璃埋設於凹部52時，凹部52内部的氣體通過貫穿孔 氣、、包i住石夕基板本體5丨外部，所以能迅速地埋設玻璃，且能抑制 k ^穿孔53形成於矽基板本體51。藉此，如圖5所，能使矽基 ，’=51吸附在形成有真空吸抽用孔的平台3〇6、3〇8之上。並 =在固定矽基板本體51及玻璃基板％的同時，於第3步驟 Ι.μ過孔而使凹部52内部的氣壓低於玻璃基板54外部的氣壓。 h ^軟化的玻璃被往凹部52内部吸引，氣泡更難在凹部52 更迅速地埋設玻璃。藉由提高真空泵的排氣能力，提高 σ ★的内部真空度，能加快埋設玻璃的處理速度。 (第2實施形態） 妨。圖7(C)所示，即使貫穿孔203係形成於玻璃基板204亦無 外部之^ ’即〃使貫穿/L 203係貫穿於凹部202内部與玻璃基板204 209向B亦热法。藉此，也能在將玻璃埋設於凹部52時，令凹部 内部的氣體通過貫穿孔203而洩往矽基板本體51外部。 之照圖7說明本發明第2實施形態之般玻璃的石夕基板 (曱）0 7⑻所示步驟係與圖4(a)所示步驟相同，省略其說 13 201218324 明。如圖7(b)所示，藉由反應性離子蝕刻^^印等異向性蝕刻選擇 性去除矽基板本體201正面的既定區域，於矽基板本體2〇1正面 形成凹部202(第1步驟）。另，於矽基板本體2⑴不形成貫穿孔。 (乙）其次’如圖7(c)所示，將玻璃基板2〇4之第[主面（圖7 之中的下面)疊合至矽基板本體201的正面(第2步驟）。另，在玻 璃基板204，預先利用喷砂加工或雷射加工形成 内部與玻璃基板朋外部之間的貫穿孔2〇3。其後，加熱玻璃^板 204，使玻璃基板204的溫度上升直到其軟化溫度為止。然後，如 圖7(d)所示，將已軟化的玻璃基板2〇4的一部分埋設於矽基板本 體20丨的凹部202(第3步驟）。就第3步驟之詳細程序而言，在交 換圖5之中的玻璃基板54與石夕基板本體51的配置順序以外，係 如同參照圖6所說明。 、 (丙）冷卻玻璃基板204使其重新固化(第4步驟）。其後，如 圖7(e)所示，留下玻璃基板2〇4埋設於矽基板本體2〇】的凹部2〇2 的邛刀，並至少去除其他部分(第5步驟）。又，留下矽基板本體 201之中位於其正面與包含凹部2〇2底面的平面之間的部分，並至 少去除其他部分。先去除玻璃與矽之中的何者均無妨。又，埋設 於矽基板本體201的凹部202的玻璃基板204，與位於石夕基板本體 2〇1正々面與包含凹部搬底面的平面之間的部分亦可藉由研削或 CMP寻方式均勻削除。藉此’使埋設玻璃的石夕基板薄膜化，能使 加速度感測晶片Α微小化。 利用以上步驟製造的埋設玻璃的矽基板，如圖7(e)所示，係 於石夕基板本體201埋設有玻璃基板204的一部分，盘圖4(e)所示 構成相同。所以，能將第2實施形態之埋設 ς 形成圖2, 3所示第丨固絲板2時所用的玻璃基用 口另，貝穿孔203之數量亦可為複數。亦即，實施第3步驟時， 只要形成有1個以上的貫穿於凹部2G2内部與玻 之間的貫穿孔203即可。 如此，在實施將玻璃埋設於凹部2〇2的圖7之第3步驟時， 在玻璃基板204形成有貫穿於凹部2〇2 $部與玻璃基板2〇4外部 201218324 =的貝穿孔203。藉此，在將玻璃埋 迅速地埋設玻璃，且能抑制氣泡。 丨所以此 在以上實_態中，藉由在該第2步驟之中使 二主面為平坦的玻璃基板之例進行說明，但 f 亦可準備具有加厚部之玻璃基板，加厚部係 部相_位置，並使加厚部與凹部相對，將凹部 如此則能更有效率地將玻璃埋設於凹部。 ，此加厚部如後述實施形態所示，可藉由在第1主面或第2主 ，形成的凸部來構成，亦可藉由在第丨主面及第2主面兩主面形 成νϋ部而構成。 (第3實施形態） 如圖8(c)所不，實施第2步驟時，在玻璃基板4〇4之第丄主 面，亦即在^合至矽基板本體4〇1的面形成有進入凹部4〇2的第i 凸部410亦無妨。藉此.，在將玻璃基板4〇4的一部分埋設於凹部 402 % ’因為凹部402的内部已有玻璃存在，所以氣泡更難在凹部 402產生’能更迅速地埋設玻璃。 以下參照圖8說明本發明第3實施形態之埋設玻璃的 之製造方法。 (曱）圖8⑻及圖8(b)所示步驟，係與圖4⑻及圖4(b)所示步 驟相同，省略其說明。 (乙）其次，如圖8(c)所示，將玻璃基板404之第1主面（圖8 之中的下面）疊合至石夕基板本體4〇1的正面（第2步驟）。另，在破 璃基板404之第1主面，亦即在對於矽基板本體4〇1的疊合面， 預先利用喷砂加工或雷射加工等方式形成有第i凸部41〇。在第2 步驟之中’第1凸部410進入凹部402之中。 (丙）如圖8(d)所示，將已軟化的玻璃基板4〇4的一部分(包含 第1凸部410)埋設於矽基板本體4〇1的凹部4〇2(第3步驟）。第3 步驟之詳細程序，如同參照圖6所說明。 15 201218324 (丁）冷卻玻璃基板404使其重新固化(第4步驟）。其後進行 的圖8(e)所示步驟’係與圖4(e)所示步驟相同，省略其說明。 如以上說明，實施第2步驟時，玻璃基板404之第1主面形 成有進入凹部402的第1凸部410。藉此，在將玻璃基板4〇4的一 部分埋設於凹部402時’因為凹部402的内部已有玻璃存在，所 以氣泡更難在凹部402產生，能更迅速地埋設玻璃。 (第4實施形態） 如圖9(c)所示，實施第3步驟時，亦可在玻璃基板504的第2 主面，亦即在疊合至J5夕基板本體501的面之相反面形成有第2凸 部 510。 以下參照圖9說明本發明第4實施形態之埋設玻璃的矽基板 之製造方法。 (曱）圖9(a)及圖9⑻所示步驟係與圖4(a)及圖4(b)所示步驟 相同，省略其說明。 (乙）其次’如圖9(c)所示’將玻璃基板5〇4之第]主面（圖9 之中的下面)疊合至矽基板本體5〇1的正面（第2步驟）。另，在玻 璃基板504的第2主面，亦即在對於矽基板本體5〇1的疊合面之 相反面，預先藉由喷砂加工或雷射加工等方式形成有第2凸部 51〇。第2凸部510從玻璃基板504之第1主面之法線方向觀窣而 言’係與凹部502形成於相同位置。 (丙）如圖9(d)所示’將已軟化的玻璃基板5〇4的一部分埋設 於矽基板本體501的凹部502(第3步驟）。第3步驟之詳細程序' 如同參照圖6所說明。另，因為加熱•加壓夾具3〇7推壓玻璃基 板504的力量集中於第2凸部51〇，所以玻璃被壓進位於第2凸^^ 510之下的凹部502。 (丁）冷卻玻璃基板504使其重新固化(第4步驟）。其後進行 的圖9(e)所示步驟，係與圖4⑷所示步驟相同，省略其說明。 …如以上說明，在將玻璃基板504的一部分埋設於凹部502時， 從玻璃基板504之第】主面之法線方向觀察而言，在與凹部5〇2 相同位置存在有第2凸部510。藉此，加熱•加壓爽具3〇7推壓玻 201218324 璃基板504的力量，因為集中於第2凸部51〇，所以氣泡更難在凹 部502產生’能更迅速地埋設玻璃。 (第5實施形態） 如圖10(b)所示’亦可在矽基板本體601的凹部602的至少一 部分設至順向推拔形狀。藉此，能更有效率地埋設玻璃。 以下參照圖10說明本發明第5實施形態之埋設玻璃的矽基板 之製造方法。 (甲）0 10⑷所示步驟’係與圖4(a)所示步驟相同，省略其說 明。如圖10(b)所示’例如利用具有結晶異向性的濕蝕刻選擇性去 除矽基板本體601正面的既定區域，在矽基板本體6〇1的正面形 成凹部602(第1步驟）。矽基板本體6〇1的凹部6〇2包含順向推拔 形狀。亦即，凹部602，其與矽基板本體6〇1主面平行之剖面積， k凹部602的底面朝向矽基板本體6〇1的主面擴大。 (乙）其後’藉由RIE等異向性蝕刻而選擇性去除凹部602底 面的既定區域’形成貫穿於凹部6Q2底面與魏板本體背面 之間的2個以上之貫穿孔6〇3。 ^ (丙）其後進行的圖10⑹〜圖10(e)所示步驟，係與圖4⑻〜 圖4(e)所示步驟相同，省略其說明。 街士 ^上綱’因為能在凹部6Q2設置順向推獅狀，所以能 /率地埋设玻璃。所以’氣泡更難在凹部6〇2產生，能更迅 ⑽凹部602的順向推拔形狀，只要至少有形成於凹部 乃1田σ>Γ'即可。只要至少有形成於一部分，即能獲得氣泡抑制 及咼處理速度之效果。 (其他貫施形態） 么士 ίΐ上所述’本發明係藉由5種實施形態來記載，論述及圖式 分内容’不應用以限定本發明i於所屬技術領域 ϊίίί 者而言’顧包含各種代替實施形態、實施例及 例如’以上係顯不貫穿孔53、2〇3、4〇3 ' 5〇3、6〇3沿著石夕基 201218324 Ϊ本3ίΐίΐ的主面之法線而貫穿的孔。但本發明不限定於 之間即可。例如，貫穿孔亦可傾斜貫穿於凹部内^ 石夕基板本體、或與玻璃基板的主面之間。或者，亦可貫穿於凹^ 内部與矽基板本體、或與玻璃基板側面之間。 又在方;石夕基板本體主面形成凹部的步驟中 „_基板本體的—部分進行加工，形成由成口 白凹^但不限定於此。例如，於絲板本體主面形成凹部g 女娜’、可將由乡結祕構成的频堆積由單結晶赠成的秒基板 本肢之主面，並去除矽膜的一部分而形成形成凹部。 再者，就製成裕度(process margin)而言，圖6的s〇7階段 理’只要在已軟化的玻璃基板54充填至凹部&裡面以後，在 玻璃充填至貫穿孔53裡面，且在已軟化的玻璃到 達平σ 306之前停止即可。 如此，應理解本發明包含絲記餘此的各種實施形態 =以’本發明僅由依此揭示而言妥當的申請專利範圍之發明特定 事項所限定。 【圖式簡單說明】 圖1(a)係顯示本發明第1實施形態之半導體裝置之中封裝蓋 之立體圖’圖1(b)係顯示本發明第丨實施形態之半導體裝置^ 封裝蓋以外構成之立體圖。 圖2係顯示圖1之加速度感測晶片a之概略構成之立體分解 圖0 圖3係顯示圖2之加速度感測晶片a之概略構成之剖面圖。 圖4(a)〜圖4(e)係顯示作為形成圖2及圖3所示的第t固定基 板2時所用的玻璃基板2〇的一例之埋設玻璃的矽基板之製 之階段剖面圖。 圖5(a)及圖5(b)係顯示用於實施圖4(d)所示的第3步驟的且# 加工裝置構成之剖面圖。 201218324 圖6係顯示使用圖5⑻及圖5(b)所示製造裝置而進行的第3 步驟之詳細程序之流程圖。 圖7(a)〜圖7(e)係顯示第2實施形態之埋設玻璃的矽基板之製 造方法之階段剖面圖。 圖8(a)〜圖8(e)係顯示第3實施形態之埋設玻璃的矽基板之製 造方法之階段剖面圖。 圖9(a)〜圖9(e)係顯示第4實施形態之埋設玻璃的矽基板之製 造方法之階段剖面圖。 圖10⑻〜圖10(e)係顯示第5實施形態之埋設玻璃的矽基板之 製造方法之階段剖面圖。 【主要元件符號說明】 1 感測器本體(半導體元件） 2 第1固定基板 3 第2固定基板 10 SOI基板 10a支持基板 l〇b絕緣層 l〇c活性層(石夕層） 11 框部 12 開口窗 13 疊合部 13a、13b、52、202、402、502、602凹部 1.3c微小突起部 14 支持彈簧部 15A、1.5B 可動電極 16 固定子 16d銜接用導體部 17 矩形窗孔 18 電極接點 19 201218324 玻璃基板 20、30、54、204、304、404、504、604 25、25Aa、25Ab、25Ba、25Bb 固定電極 26 金屬配線 28 配線 35 附著防止膜 51 碎基板本體 53、203、403、503、603 貫穿孔 101 封裝 102塑膠封裝本體 102a搭載面 103 封裝蓋 104黏接部 112 引線 ]12a内部引線 l]2b外部引線 113 標示 1] 6樹脂被覆部 201、401、501、601 矽基板本體 305 0型環 306平台（真空吸爪平台） 307加熱•加壓夾具 308 平台（多孔吸頭平台） 309加熱器 310真空洩漏防止夾具 410 第1凸部 510 第2凸部 A加速度感測晶片 B控制1C晶片 W接合線(Ref.) In the S05 stage, use the heating and pressing fixture 3〇7 54 51 0 ^ s〇1 AJ section of the heat treatment 'and the S05 stage stamping process so that a part of the softened glass plate 54 is buried in the crucible. The concave portion 52 of the substrate body 51 (the third step (^) enters the S09 stage when the "recessed portion of the concave portion 52 is filled with the softened glass substrate %" in the S07 stage, and stops driving the vacuum pump to release the vacuum suction of the base = 54 The claws are then closed at the sn stage and the glass substrate 54 is cooled using a predetermined cooling mechanism. Thus, the glass substrate 54 softened in the third step is implemented using the manufacturing apparatus shown in Fig. 5(a) and Fig. 5 A third step of embedding a part of the concave pattern 4 of the ruthenium substrate body 51 includes at least the s〇3 to S()7 stages in FIG. ° The above shows that the glass substrate is fixed and fixed by vacuum pressure. However, the present invention is not limited thereto, and it can be connected to the surface by anodization, surface activation, and enthalpy. σ, resin bonding, etc. can also be joined. Thereby, the airtightness of the laminated surface between the ancient substrate body 51 and the glass substrate 3〇4 is obtained. Further, in order to embed a part of the softened glass substrate 54 in the concave portion 52 of the stone 5], the weight of the glass itself and the force due to the vacuum pressure are sufficient, and the pressing process of the SG5 stage of Fig. 6 may not be performed. For example, the recording of the glass substrate 54 is lowered by the temperature of the glass plate 54. At this time, even if p is omitted, the surface substrate <^ knife softened by the Chengxian line and the glass machine can be buried in the concave portion 52. In addition, the arrangement of the glass substrate 54 and the stone substrate body 5i 201218324 is the weight of the substrate body 51 itself instead of the weight of the glass itself. A portion of the 51 W softened glass substrate 54 is embedded in the crucible body.卩52, and the strength caused by the weight of the broken glass is sufficient, not only the rushing treatment, even if the vacuum suction is omitted. The order of the implementation of the 'exchange S〇9 stage and the SU stage in Fig. 6 is also beneficial: the switch of the heater 309 is turned off first, and the established cooler and i2; te are used. Thereafter, the driving of the vacuum pump is stopped, and the vacuum suction claws of the substrate body 51 and the % substrate 54 are removed. fruit. According to the i-th embodiment of the present invention, the following effects can be obtained by implementing the through-hole imaginary between the inside of the portion 52 of Fig. 4 in which the glass is embedded in the concave portion 52 and the outside of the silk plate body 51. . When the glass is embedded in the concave portion 52, the gas inside the concave portion 52 passes through the through-hole gas and surrounds the outside of the stone substrate body 5, so that the glass can be quickly buried and the formation of the k^-perforation 53 can be suppressed. The substrate body 51 is disposed on the substrate. Thereby, as shown in Fig. 5, the sulfhydryl group and '=51 can be adsorbed on the stages 3〇6, 3〇8 on which the vacuum suction holes are formed. Further, while fixing the substrate body 51 and the glass substrate %, the gas pressure inside the concave portion 52 is lower than the gas pressure outside the glass substrate 54 in the third step. The h^softened glass is attracted to the inside of the recess 52, and it is more difficult for the bubble to embed the glass more quickly in the recess 52. By increasing the exhaust capacity of the vacuum pump and increasing the internal vacuum of σ ★, the processing speed of the buried glass can be increased. (Second embodiment) As shown in Fig. 7(C), even if the through hole 203 is formed in the glass substrate 204, there is no external heat, that is, the through/L 203 is inserted through the inside of the concave portion 202 and the glass substrate 204 209 is heated to B. Thereby, when the glass is buried in the concave portion 52, the gas inside the concave portion can be vented to the outside of the ruthenium substrate main body 51 through the through hole 203. Referring to Fig. 7, the steps shown in Fig. 7 (8) of the glass substrate of the second embodiment of the present invention are the same as those shown in Fig. 4(a), and the description thereof is omitted. As shown in FIG. 7(b), a predetermined region on the front surface of the substrate body 201 is selectively removed by anisotropic etching such as reactive ion etching, and a recess 202 is formed on the front surface of the substrate body 2〇1 (step 1) ). Further, the through hole is not formed in the substrate body 2 (1). (B) Next, as shown in Fig. 7(c), the [main surface (lower side in Fig. 7) of the glass substrate 2〇4 is superposed on the front surface of the ruthenium substrate main body 201 (second step). Further, in the glass substrate 204, a through hole 2?3 between the inside and the outside of the glass substrate is formed in advance by sandblasting or laser processing. Thereafter, the glass plate 204 is heated to raise the temperature of the glass substrate 204 until it softens. Then, as shown in Fig. 7(d), a part of the softened glass substrate 2〇4 is buried in the concave portion 202 of the ruthenium substrate body 20 (the third step). The detailed procedure of the third step is as described with reference to Fig. 6 except for the order in which the glass substrate 54 and the stone substrate body 51 in Fig. 5 are exchanged. And (c) cooling the glass substrate 204 to re-solidify (step 4). Thereafter, as shown in Fig. 7(e), the boring tool in which the glass substrate 2〇4 is embedded in the concave portion 2〇2 of the 矽 substrate main body 2 is left, and at least the other portions are removed (the fifth step). Further, a portion of the crucible substrate body 201 between the front surface and the plane including the bottom surface of the recess 2 2 is left, and at least the other portions are removed. It is fine to remove any of the glass and the crucible first. Further, the portion of the glass substrate 204 embedded in the concave portion 202 of the 矽 substrate body 201 and the plane between the front surface of the 夕 基板 substrate body 2 〇 1 and the plane including the bottom surface of the concave portion can be uniformly removed by grinding or CMP searching. . Thereby, the thin-walled substrate is thinned, and the acceleration sensing wafer can be made smaller. As shown in Fig. 7(e), the ruthenium substrate in which the glass is buried is formed by embedding a part of the glass substrate 204 in the shishan substrate body 201, and the configuration shown in Fig. 4(e) is the same. Therefore, the embedding of the second embodiment can be used to form the glass-based port for the second wire 2 shown in Figs. 2 and 3, and the number of the perforations 203 can be plural. In other words, when the third step is performed, one or more through holes 203 penetrating between the inside of the concave portion 2G2 and the glass may be formed. As described above, in the third step of FIG. 7 in which the glass is embedded in the concave portion 2〇2, the glass substrate 204 is formed with a perforation hole 203 penetrating through the concave portion 2〇2$ and the outer surface of the glass substrate 2〇2012 201218324. Thereby, the glass is buried in the glass quickly, and the bubbles can be suppressed. Therefore, in the above embodiment, an example in which the two main surfaces are flat in the second step is described. However, a glass substrate having a thick portion may be prepared, and the thick portion may be prepared. The portion is positioned such that the thickened portion faces the recessed portion, and the recessed portion allows the glass to be more efficiently embedded in the recessed portion. The thickened portion may be formed by a convex portion formed on the first main surface or the second main portion as described in the embodiment below, or may be formed on both the main surface of the second main surface and the second main surface. It is composed of ϋϋ. (Third Embodiment) As shown in Fig. 8(c), when the second step is performed, the second main surface of the glass substrate 4〇4, that is, the surface of the substrate substrate 4〇1 is formed. The i-th convex portion 410 of the concave portion 4〇2 may also be used. As a result, a part of the glass substrate 4〇4 is buried in the concave portion 402%' because the glass is present inside the concave portion 402, so that it is more difficult for the air bubbles to be generated in the concave portion 402 to more easily embed the glass. Next, a method of manufacturing a buried glass according to a third embodiment of the present invention will be described with reference to Fig. 8 . (8) The steps shown in Figs. 8(8) and 8(b) are the same as those shown in Figs. 4(8) and 4(b), and the description thereof will be omitted. (B) Next, as shown in FIG. 8(c), the first main surface (the lower surface in FIG. 8) of the glass substrate 404 is superposed on the front surface of the Shishi substrate main body 4〇1 (second step). Further, on the first main surface of the glass substrate 404, that is, on the overlapping surface of the ruthenium substrate main body 〇1, the i-th convex portion 41 is formed in advance by sandblasting or laser processing. In the second step, the first convex portion 410 enters the concave portion 402. (c) As shown in Fig. 8(d), a part (including the first convex portion 410) of the softened glass substrate 4〇4 is embedded in the concave portion 4〇2 of the 矽 substrate main body 4〇1 (third step). The detailed procedure of the third step is as described with reference to FIG. 6. 15 201218324 (D) Cool the glass substrate 404 to re-solidify (Step 4). The step shown in Fig. 8(e) which follows is the same as the step shown in Fig. 4(e), and the description thereof will be omitted. As described above, when the second step is performed, the first main surface of the glass substrate 404 is formed with the first convex portion 410 that enters the concave portion 402. Thereby, when a part of the glass substrate 4〇4 is buried in the concave portion 402, since glass is present inside the concave portion 402, bubbles are more likely to be generated in the concave portion 402, and the glass can be buried more quickly. (Fourth Embodiment) As shown in Fig. 9(c), when the third step is performed, the second main surface of the glass substrate 504, that is, the surface opposite to the surface of the J5 substrate body 501 may be formed. There is a second convex portion 510. Next, a method of manufacturing a ruthenium substrate in which a glass is embedded according to a fourth embodiment of the present invention will be described with reference to Fig. 9 . (曱) The steps shown in Figs. 9(a) and 9(8) are the same as those shown in Figs. 4(a) and 4(b), and the description thereof will be omitted. (B) Next, as shown in Fig. 9(c), the first principal surface (the lower surface in Fig. 9) of the glass substrate 5〇4 is superposed on the front surface of the ruthenium substrate main body 5〇1 (second step). Further, on the second main surface of the glass substrate 504, that is, on the surface opposite to the overlapping surface of the ruthenium substrate main body 5〇1, the second convex portion 51 is formed in advance by sandblasting or laser processing. . The second convex portion 510 is viewed from the normal direction of the first main surface of the glass substrate 504, and is formed at the same position as the concave portion 502. (c) As shown in Fig. 9(d), a part of the softened glass substrate 5?4 is embedded in the concave portion 502 of the ruthenium substrate main body 501 (third step). The detailed procedure of the third step is as described with reference to FIG. 6. Further, since the force of the heating/pressurizing jig 3〇7 pushing the glass substrate 504 is concentrated on the second convex portion 51〇, the glass is pressed into the concave portion 502 located under the second convex portion 510. (D) cools the glass substrate 504 to re-solidify (Step 4). The step shown in Fig. 9(e) which follows is the same as the step shown in Fig. 4 (4), and the description thereof is omitted. As described above, when a part of the glass substrate 504 is embedded in the concave portion 502, the second convex portion 510 is present at the same position as the concave portion 5〇2 when viewed from the normal direction of the first principal surface of the glass substrate 504. . Thereby, the heating/pressurizing and cooling device 3〇7 pushes the glass 201218324. Since the force of the glass substrate 504 is concentrated on the second convex portion 51〇, it is more difficult for the air bubbles to be generated in the concave portion 502, and the glass can be buried more quickly. (Fifth Embodiment) As shown in Fig. 10 (b), at least a portion of the concave portion 602 of the cymbal substrate body 601 may be provided in a forwardly pushed shape. Thereby, the glass can be buried more efficiently. Next, a method of manufacturing a ruthenium substrate in which a glass is embedded according to a fifth embodiment of the present invention will be described with reference to Fig. 10 . (a) The step shown in 0 (4) is the same as the step shown in Fig. 4 (a), and the description thereof is omitted. As shown in Fig. 10 (b), for example, a predetermined region on the front surface of the substrate body 601 is selectively removed by wet etching having crystal anisotropy, and a concave portion 602 is formed on the front surface of the substrate body 6〇1 (first step). The concave portion 6〇2 of the 矽 substrate body 〇1 includes a forwardly pushed shape. That is, the concave portion 602 has a cross-sectional area parallel to the main surface of the 矽 substrate main body 〇1, and the bottom surface of the k concave portion 602 is enlarged toward the main surface of the 矽 substrate main body 〇1. (B) Thereafter, a predetermined region \\ is used to selectively remove the bottom surface of the concave portion 602 by anisotropic etching such as RIE, and two or more through holes 6〇3 penetrating between the bottom surface of the concave portion 6Q2 and the back surface of the slab main body are formed. ^ (C) The steps shown in Figs. 10(6) to 10(e) which are subsequently performed are the same as those shown in Figs. 4(8) to 4(e), and the description thereof will be omitted. Because it is possible to push the lion in the direction of the recessed part 6Q2, it is able to bury the glass. Therefore, it is more difficult for the bubble to be generated in the concave portion 6〇2, and it is possible to more quickly (10) the forward-pushing shape of the concave portion 602, as long as at least the concave portion is formed in the concave portion. As long as at least a part is formed, the effect of bubble suppression and enthalpy treatment speed can be obtained. (Other embodiments) The above description of the present invention is described by the five embodiments, and the description and the content of the drawings are not applied to limit the present invention. In the technical field of the art ϊ ί ί ί Various alternative embodiments, examples, and, for example, 'the above-mentioned lines are not penetrated through the holes 53, 2〇3, 4〇3', 5〇3, and 6〇3, which run through the normal line of the main surface of the stone 2012 2012 201218324 Ϊ本3ίΐίΐ Hole. However, the present invention is not limited to the one. For example, the through hole may be obliquely inserted through the inside of the recess, or between the main surface of the glass substrate. Alternatively, it may be penetrated between the inside of the recess and the substrate of the crucible or the side of the glass substrate. In the step of forming the concave portion on the main surface of the substrate of the stone substrate, the portion of the substrate body is processed to form a white concave portion, but is not limited thereto. For example, a concave portion g is formed on the main surface of the silk plate body. Na', the frequency stack composed of the township secrets can be made from a single crystal to the main surface of the second substrate of the limb, and a part of the diaphragm is removed to form a concave portion. Further, a process margin is formed. In other words, the s〇7 stage of FIG. 6 can be filled in the through hole 53 after the softened glass substrate 54 is filled into the recessed portion, and can be stopped before the softened glass reaches the flat σ 306. Thus, it should be understood that the present invention encompasses various embodiments of the invention. The invention is limited only by the invention specifics of the scope of the invention as set forth herein. FIG. 1(a) Fig. 1(b) is a perspective view showing the configuration of a semiconductor device package cover according to a third embodiment of the present invention. Fig. 2 is a view showing the acceleration of Fig. 1. sense 3 is a cross-sectional view showing a schematic configuration of the acceleration sensing wafer a of FIG. 2. FIG. 4(a) to FIG. 4(e) are shown as forming FIG. 2 and FIG. FIG. 5(a) and FIG. 5(b) are diagrams for performing the implementation of FIG. 4(d), which is an example of a stage in which a glass substrate of a glass substrate 2 is used for fixing the substrate 2 to be fixed. Fig. 6 is a flow chart showing the detailed procedure of the third step performed by using the manufacturing apparatus shown in Figs. 5 (8) and 5 (b). Fig. 7 is a flow chart showing the configuration of the third processing step. (a) to (e) of FIG. 7 are cross-sectional views showing a method of manufacturing a ruthenium substrate in which a glass is embedded in the second embodiment. Fig. 8(a) to Fig. 8(e) show the buried glass of the third embodiment. Fig. 9(a) to Fig. 9(e) are cross-sectional views showing a stage of a method of manufacturing a germanium-embedded germanium substrate according to a fourth embodiment. Fig. 10(8) to Fig. 10(e) A cross-sectional view showing a method of manufacturing a germanium substrate in which a glass is embedded in a fifth embodiment. [Description of main components] 1 Sensor body (semiconductor 2) 1st fixed substrate 3 2nd fixed substrate 10 SOI substrate 10a support substrate 10b insulating layer 10c active layer (sand layer) 11 frame portion 12 opening window 13 overlapping portions 13a, 13b, 52, 202 402, 502, 602 recessed portion 1.3c minute projection portion 14 supporting spring portion 15A, 1.5B movable electrode 16 fixing member 16d engaging conductor portion 17 rectangular window hole 18 electrode contact 19 201218324 glass substrate 20, 30, 54, 204, 304, 404, 504, 604 25, 25Aa, 25Ab, 25Ba, 25Bb fixed electrode 26 metal wiring 28 wiring 35 adhesion preventing film 51 broken substrate body 53, 203, 403, 503, 603 through hole 101 package 102 plastic package body 102a Face 103 Package Cover 104 Bonding Port 112 Lead] 12a Inner Lead l] 2b External Lead 113 Mark 1] 6 Resin Covered Parts 201, 401, 501, 601 矽 Substrate Body 305 0 Type Ring 306 Platform (Vacuum Claw Platform) 307 Heating/pressurizing jig 308 platform (porous tip platform) 309 heater 310 vacuum leak preventing jig 410 first convex portion 510 second convex portion A acceleration sensing wafer B control 1C wafer W bonding wire

20 S20 S

Claims (1)

201218324 七、申請專利範圍： 1· 一種埋設玻璃的矽基板之製造方法，其特徵在於，包含 以下步驟： 、 第1步驟，於矽基板本體之主面形成凹部； 第2步驟，將玻璃基板之第1主面疊合至矽基板本體之主面； 第3步驟，加熱該玻璃基板使其軟化，而將該玻璃基板的一 部分埋設於該矽基板本體的凹部； 第4步驟，冷卻該玻璃基板；以及 第5步驟’留下該玻璃基板之中埋設於該矽基板本體凹部的 部分，去除其他部分； 並且，於貫施該第3步驟時，形成有貫穿於該凹部内部與外 部之間的貫穿孔。 /' 2. 如申請專利範圍第1項之埋設玻璃的矽基板之製造方 法，其中，該貫穿孔係形成於該矽基板本體。 3. 如申請專利範圍第1項之埋設玻璃的石夕基板之製造方 法’其中，該貫穿孔係形成於該玻璃基板。 4. 如申请專利範圍第1至3項中任一項之埋設玻璃的石夕基 板之製造方法，其中，於該第3步驟之中通過該貫穿孔令該凹部 内部的氣壓低於該玻璃基板外部的氣壓。 5. 如申請專利範圍第1至4項中任一項之埋設玻璃的矽基 板之製造方法，其中，於該第2步驟之中準備具有加厚部之玻璃 基板，該加厚部係位於與該凹部相對的位置，並使該加厚部與該 凹部相對，將該凹部予以密閉。 6. 如申請專利範圍第5項之埋設玻璃的矽基板之製造方 法，其中該加厚部係在該玻璃基板之第1主面形成進入該凹部的 第1凸部而構成。 7· >如申請專利範圍第5項之埋設玻璃的矽基板之製造方 法，其中该加厚部為在該玻璃基板的第2主面形成第2凸部而構 成。 8.如申請專利範圍第1至7項中任一項之埋設玻璃的矽基 21 201218324 板之製造方法，其中，該凹部與矽基板本體主面平行之剖面積的 至少有一部分，係從該凹部的底面朝向該矽基板本體之主面擴大。 八、圖式· S 22201218324 VII. Patent Application Range: 1. A method for manufacturing a ruthenium substrate in which a glass is embedded, comprising the steps of: forming a concave portion on a main surface of the ruthenium substrate body in the first step; and performing a glass substrate on the second step The first main surface is superposed on the main surface of the substrate body; in the third step, the glass substrate is heated to soften, and a part of the glass substrate is embedded in the concave portion of the substrate body; and the fourth step is to cool the glass substrate. And a fifth step of "retaining a portion of the glass substrate embedded in the recess of the base substrate body to remove other portions; and, when performing the third step, forming a portion penetrating between the inside and the outside of the recess Through hole. [2] The method for producing a ruthenium substrate for embedding glass according to the first aspect of the invention, wherein the through hole is formed in the ruthenium substrate body. 3. The method of producing a glazing substrate for embedding glass according to the first aspect of the invention, wherein the through hole is formed in the glass substrate. 4. The method of manufacturing a glazing substrate for embedding glass according to any one of claims 1 to 3, wherein in the third step, the gas pressure inside the concave portion is made lower than the glass substrate through the through hole. External air pressure. 5. The method for producing a ruthenium-embedded substrate according to any one of claims 1 to 4, wherein in the second step, a glass substrate having a thickened portion is prepared, and the thickened portion is located at The concave portion is opposed to the concave portion and is opposed to the concave portion, and the concave portion is sealed. 6. The method of producing a ruthenium substrate for embedding glass according to the fifth aspect of the invention, wherein the thickened portion is formed by forming a first convex portion that enters the concave portion on a first main surface of the glass substrate. The method of producing a ruthenium substrate for embedding glass according to the fifth aspect of the invention, wherein the thickened portion is formed by forming a second convex portion on a second main surface of the glass substrate. The manufacturing method of the enamel base 21 201218324 plate of the embedded glass according to any one of claims 1 to 7, wherein at least a part of a cross-sectional area of the concave portion parallel to the main surface of the dam substrate main body is from the The bottom surface of the recess is enlarged toward the main surface of the cymbal substrate body. Eight, schema · S 22
TW100110628A 2010-03-26 2011-03-28 A process of manufacturing a buried glass silicon substrate TW201218324A (en)

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