WO2011118787A1 - Manufacturing method for glass-embedded silicon substrate - Google Patents
Manufacturing method for glass-embedded silicon substrate Download PDFInfo
- Publication number
- WO2011118787A1 WO2011118787A1 PCT/JP2011/057402 JP2011057402W WO2011118787A1 WO 2011118787 A1 WO2011118787 A1 WO 2011118787A1 JP 2011057402 W JP2011057402 W JP 2011057402W WO 2011118787 A1 WO2011118787 A1 WO 2011118787A1
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- WIPO (PCT)
- Prior art keywords
- silicon substrate
- glass
- glass substrate
- recess
- embedded
- Prior art date
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Images
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Definitions
- the present invention relates to a method for manufacturing a glass-embedded silicon substrate in which glass is disposed inside a silicon substrate body.
- Patent Document 1 Conventionally, for example, a technique described in Patent Document 1 is known for the purpose of manufacturing a glass substrate having a fine structure.
- the inner space of the depression becomes a closed space. Therefore, when a part of the glass substrate is embedded in the recess, the gas inside the recess is difficult to escape, so that the glass embedding process takes time, which is an adverse effect of shortening the process time. In addition, voids are easily generated in the re-solidified glass material, and the production yield is reduced.
- the present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a glass-embedded silicon substrate that quickly embeds glass and suppresses the generation of voids.
- the feature of the present invention that achieves the above object relates to a method for manufacturing a glass-embedded silicon substrate.
- This manufacturing method includes at least first to fifth steps.
- a recess is formed in the main surface of the silicon substrate body.
- the first main surface of the glass substrate is superimposed on the main surface of the silicon substrate body.
- the glass substrate is softened by applying heat, and a part of the glass substrate is embedded in the recess of the silicon substrate body.
- a through hole penetrating between the inside and the outside of the recess is formed.
- the glass substrate is cooled.
- the fifth step the portion of the glass substrate embedded in the recess of the silicon substrate body is left and the other portion is removed.
- the gas inside the recess escapes to the outside through the through hole, so that the glass can be embedded quickly and the void is suppressed. can do.
- FIG. 1A is a perspective view showing a configuration of a package lid in the semiconductor device according to the first embodiment of the present invention
- FIG. 1B is a diagram illustrating the first embodiment of the present invention. It is a perspective view which shows the structure except a package lid
- FIG. 3 is a cross-sectional view illustrating a schematic configuration of an acceleration sensor chip A in FIG. 2. 4 (a) to 4 (e) show a process for producing a glass-embedded silicon substrate as an example of the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS. It is sectional drawing.
- FIGS. 5B are cross-sectional views showing the configuration of a specific processing apparatus for carrying out the third step shown in FIG. It is a flowchart which shows the detailed procedure of the 3rd process performed using the manufacturing apparatus shown to Fig.5 (a) and FIG.5 (b).
- 7A to 7E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the second embodiment.
- FIGS. 8A to 8E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the third embodiment.
- FIG. 9A to FIG. 9E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the fourth embodiment.
- FIGS. 10A to 10E are process cross-sectional views illustrating a method for manufacturing a glass-embedded silicon substrate according to the fifth embodiment.
- the semiconductor device includes an acceleration sensor chip A as an example of a MEMS device, a control IC chip B on which a signal processing circuit that processes a signal output from the acceleration sensor chip A is formed, and an acceleration sensor chip A and a control IC chip B. Are mounted on the surface mounting type package 101.
- the package 101 includes a plastic package main body 102 having a box-like shape with one open surface located on the upper surface in FIG. 1B and a package lid (lid) 103 that closes one open surface of the package 101.
- the plastic package body 102 includes a plurality of leads 112 that are electrically connected to the acceleration sensor chip A and the control IC chip B.
- Each lead 112 includes an outer lead 112 b led out from the outer side surface of the plastic package main body 102 and an inner lead 112 a led out from the inner side surface of the plastic package main body 102.
- Each inner lead 112a is electrically connected to each pad included in the control IC chip B through a bonding wire W.
- the acceleration sensor chip A has a mounting surface 102a located at the bottom of the plastic package main body 102 by the adhesive portions 104 arranged at three locations corresponding to the three vertices of the virtual triangle defined based on the outer peripheral shape of the acceleration sensor chip A. It is fixed to.
- the adhesive portion 104 includes a frustoconical protrusion that is continuously and integrally provided on the plastic package body 102, and an adhesive that covers the protrusion.
- the adhesive is made of, for example, a silicone resin such as a silicone resin having an elastic modulus of 1 MPa or less.
- all the pads included in the acceleration sensor chip A are arranged along one side of the main surface of the acceleration sensor chip A facing the open surface of the plastic package main body 102.
- the adhesive portion 104 is located at each vertex of a virtual triangle having vertices at two locations at both ends of the one side and one location (for example, the central portion) of the side parallel to the one side.
- the bonding wire W can be stably bonded to each pad.
- one portion of the side parallel to the one side is not limited to the central portion, and may be, for example, one of both ends, but the central portion makes the semiconductor element A more stable. It can be supported and the bonding wire W can be stably bonded to each pad.
- the control IC chip B is a semiconductor chip composed of a plurality of semiconductor elements formed on a semiconductor substrate made of single crystal silicon or the like, wirings connecting them, and a passivation film that protects the semiconductor elements and wirings from the external environment.
- the entire back surface of the control IC chip B is fixed to the bottom surface of the plastic package body 102 with a silicone resin.
- the signal processing circuit formed on the control IC chip B may be appropriately designed according to the function of the acceleration sensor chip A, and may be any one that cooperates with the acceleration sensor chip A.
- the control IC chip B can be formed as an ASIC (Application Specific IC).
- a die bonding process for fixing the acceleration sensor chip A and the control IC chip B to the plastic package body 102 is performed.
- a wire bonding step of electrically connecting the acceleration sensor chip A and the control IC chip B and the control IC chip B and the inner lead 112a via the bonding wires W is performed.
- a resin coating portion forming step for forming the resin coating portion 116 is performed, and subsequently, a sealing step for bonding the outer periphery of the package lid 103 to the plastic package body 102 is performed.
- the inside of the plastic package main body 102 is sealed in an airtight state.
- a notation 113 indicating a product name, a manufacturing date and the like is formed in an appropriate part of the package lid 103 by a laser marking technique.
- the control IC chip B is formed using a single silicon substrate, whereas the acceleration sensor chip A is formed using a plurality of stacked substrates. Therefore, since the thickness of the acceleration sensor chip A is thicker than the thickness of the control IC chip B, the mounting surface 102a on which the acceleration sensor chip A is mounted at the bottom of the plastic package body 102 is formed from the mounting portion of the control IC chip B. Is also recessed. Therefore, on the bottom surface of the plastic package main body 102, the thickness of the portion where the acceleration sensor chip A is mounted is thinner than other portions.
- the outer shape of the plastic package body 102 is a rectangular parallelepiped, but this is only an example, and the outer shape of the acceleration sensor chip A and the control IC chip B, the number of leads 112, the pitch, etc. What is necessary is just to set suitably according to.
- LCP liquid crystalline polyester
- PPS polyphenylene sulfite
- PBT polybisamide triazole
- each lead 112 that is, the material of the lead frame that is the basis of each lead 112
- phosphor bronze having a high spring property among copper alloys is adopted.
- a lead frame made of phosphor bronze and a thickness of 0.2 mm is used as the lead frame, and a laminated film of a Ni film having a thickness of 2 ⁇ m to 4 ⁇ m and an Au film having a thickness of 0.2 ⁇ m to 0.3 ⁇ m.
- a plating film made of is formed by an electrolytic plating method. Thereby, it is possible to achieve both the bonding reliability of wire bonding and the soldering reliability.
- the plus package body 102 of the thermoplastic resin molded product has leads 112 formed integrally at the same time.
- the adhesion between the plastic package body 102 formed by LCP, which is a thermoplastic resin, and the Au film of the lead 112 is low. Therefore, the lead 112 is prevented from falling off by providing a punch hole in a portion of the above-described lead frame embedded in the plastic package body 102.
- the semiconductor device of FIG. 1 is provided with a resin coating portion 116 that covers the exposed portion of the inner lead 112a and the periphery thereof.
- the resin coating portion 116 is made of a moisture-impermeable resin such as an epoxy resin such as an amine epoxy resin. After the wire bonding process, this non-moisture permeable resin is applied using a dispenser and cured to improve airtightness. Note that ceramics may be used instead of the moisture-impermeable resin, and when ceramics are used, they may be sprayed locally using a technique such as plasma spraying.
- the bonding wire W an Au wire having higher corrosion resistance than that of an Al wire is used.
- an Au wire having a diameter of 25 ⁇ m is adopted, the present invention is not limited to this, and for example, an Au wire having a diameter of 20 ⁇ m to 50 ⁇ m may be appropriately selected.
- the acceleration sensor chip A is a capacitance type acceleration sensor chip, which is an SOI (Silicon On Insulator).
- a sensor main body 1 formed using a substrate 10 a first fixed substrate 2 formed using a glass substrate 20, and a second fixed substrate 3 formed using a glass substrate 30 are provided.
- the first fixed substrate 2 is fixed to one surface side (upper surface side in FIG. 2) of the sensor body 1, and the second fixed substrate 3 is fixed to the other surface side (lower surface side in FIG. 2) of the sensor body 1. Is done.
- the first and second fixed substrates 2 and 3 are formed to have the same outer dimensions as the sensor body 1.
- the sensor body 1 is not limited to the SOI substrate 10 and may be formed using, for example, a normal silicon substrate that does not include an insulating layer. Further, the first and second fixed substrates 2 and 3 may be formed of either a silicon substrate or a glass substrate, respectively.
- the sensor main body 1 includes a frame portion 11 in which two rectangular windows 12 in a plan view are arranged side by side along the one surface, and two rectangular shapes in a plan view arranged inside each open window 12 of the frame portion 11.
- the weight part 13 and a pair of support spring parts 14 for connecting the frame part 11 and the weight part 13 to each other are provided.
- the two weight parts 13 having a rectangular shape in a plan view are arranged separately from the first and second fixed substrates 2 and 3, respectively.
- Movable electrodes 15A and 15B are arranged on the main surface of each weight portion 13 facing the first fixed substrate 2, respectively.
- the entire outer periphery of the frame portion 11 surrounding the weight portion 13 is joined to the first and second fixed substrates 2 and 3.
- the frame portion 11 and the first and second fixed substrates 2 and 3 constitute a chip size package that houses the weight portion 13 and a stator 16 described later.
- the pair of support spring portions 14 are arranged so as to sandwich the weight portion 13 along a straight line passing through the center of gravity of the weight portion 13 inside each opening window 12 of the frame portion 11.
- Each support spring portion 14 is a torsion spring (torsion bar) capable of torsional deformation, and is formed to be thinner than the frame portion 11 and the weight portion 13. It can be displaced around the pair of support spring portions 14.
- a rectangular window hole 17 in plan view that communicates with each opening window 12 is arranged in the same direction as the two opening windows 12. Inside each window hole 17, two stators 16 are arranged along the direction in which the pair of support spring portions 14 are arranged side by side.
- each stator 16 is joined to the first and second fixed substrates 2 and 3, respectively.
- each stator 16 is formed with a circular electrode pad 18 made of a metal thin film such as an Al—Si film.
- a circular electrode pad 18 made of, for example, a metal thin film such as an Al—Si film is formed in a portion between adjacent window holes 17 in the frame portion 11.
- Each electrode pad 18 formed on each stator 16 is electrically connected to each fixed electrode 25 described later, and the electrode pad 18 formed on the frame portion 11 is electrically connected to the movable electrode 15A and the movable electrode 15B. It is connected to the.
- the plurality of electrode pads 18 described above are arranged along one side of the rectangular outer peripheral shape of the acceleration sensor chip A.
- the first fixed substrate 2 includes a plurality of wirings 28 penetrating between a first main surface of the first fixed substrate 2 and a second main surface (a surface overlapping the sensor main body 1) facing the first main surface. And a plurality of fixed electrodes 25 formed on the second main surface.
- the fixed electrode 25Aa and the fixed electrode 25Ab are arranged in a pair so as to face the movable electrode 15A.
- the fixed electrode 25Ba and the fixed electrode 25Bb are arranged in a pair so as to face the movable electrode 15B.
- Each fixed electrode 25 is made of a metal thin film such as an Al—Si film, for example.
- Each wiring 28 is electrically connected to the electrode pad 18 of the sensor body 1 on the second main surface of the first fixed substrate 2. As a result, the potential of each fixed electrode 25 and the potential of the movable electrode 15 can be taken out from the acceleration sensor chip A via the electrode pad 18.
- An adhesion preventing film 35 made of a metal thin film such as an Al—Si film is disposed on one surface of the second fixed substrate 3 (a surface overlapping the sensor body 1) and at a position corresponding to the weight portion 13. Yes.
- the adhesion preventing film 35 prevents adhesion of the weight part 13 that is displaced.
- FIG. 3 shows a configuration of the acceleration sensor chip A on a cut surface perpendicular to a straight line passing through the pair of support spring portions 14.
- the sensor body 1 is formed using an SOI substrate 10.
- the SOI substrate 10 includes a support substrate 10a made of single crystal silicon, an insulating layer 10b made of a silicon oxide film arranged on the support substrate 10a, and an n-type silicon layer (active) arranged on the insulating layer 10b. Layer) 10c.
- the frame 11 and the stator 16 are joined to the first fixed substrate 2 and the second fixed substrate 3.
- the weight portion 13 is disposed separately from the first and second fixed substrates 2 and 3, and is supported by the frame 11 by a pair of support spring portions 14.
- a plurality of minute protrusions 13 c that restrict excessive displacement of the weight part 13 are provided so as to protrude from the surfaces of the weight part 13 facing the first and second fixed substrates 2 and 3.
- the weight portion 13 is formed with concave portions 13a and 13b opened in a rectangular shape. Since the sizes of the recesses 13a and 13b are different from each other, the masses on the left and right of the weight portion 13 are different from each other with a straight line passing through the pair of support spring portions 14 as a boundary.
- the wiring 28 of the first fixed substrate 2 is electrically connected to the electrode pad 18.
- the electrode pad 18 is connected to the fixed electrode 25 through the stator 16, the connecting conductor portion 16 d, and the metal wiring 26.
- the acceleration sensor chip A described above has four pairs of the movable electrode 15 provided on the sensor body 1 and the fixed electrode 25 provided on the first fixed substrate 2.
- a variable capacitor is configured for each pair.
- acceleration is applied to the acceleration sensor chip A, that is, the weight portion 13, the support spring portion 14 is twisted and the weight portion 13 is displaced.
- the facing area and interval between the paired fixed electrode 25 and movable electrode 15 change, and the capacitance of the variable capacitor changes. Therefore, the acceleration sensor chip A can detect acceleration from the change in capacitance.
- FIGS. 4A to 4E a glass-embedded silicon substrate as an example of the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS. The manufacturing method will be described.
- a silicon substrate body 51 having a front surface (upper surface in FIG. 4) and a rear surface (lower surface in FIG. 4) is prepared.
- a p-type or n-type impurity is added to the entire silicon substrate body 51, and the electrical resistance of the silicon substrate body 51 is sufficiently small.
- an impurity is added to the entire silicon substrate body 51.
- the impurity may not be added to the entire silicon substrate body 51. It is sufficient that impurities are added at least to the depth of the portion to be left as the wiring in FIG.
- a predetermined region on the surface of the silicon substrate body 51 is formed by dry etching such as wet etching or reactive ion etching (RIE) using a TMAH (tetramethylammonium hydroxide) aqueous solution as an etchant.
- the recess 52 is formed on the surface of the silicon substrate body 51 by selectively removing it (first step). Thereafter, a predetermined region on the bottom surface of the recess 52 is selectively removed by anisotropic etching such as RIE, and one or more through holes 53 penetrating between the bottom surface of the recess 52 and the back surface of the silicon substrate body 51 are formed.
- the glass substrate 54 is cooled and re-solidified (fourth step). Then, as shown in FIG.4 (e), the part embedded in the recessed part 52 of the silicon substrate main body 51 is left among glass substrates 54, and another part is removed (5th process). Further, the silicon substrate body 51 is left with a portion between the surface and the plane including the bottom surface of the recess 52, and the other portions are removed.
- the second main surface of the glass substrate 54 (such as grinding using a diamond grindstone, polishing such as chemical mechanical polishing (CMP), or dry etching such as RIE or wet etching using HF is used.
- the upper surface in FIG. 4 is uniformly scraped to expose the silicon substrate body 51 on the second main surface of the glass substrate 54.
- the back surface of the silicon substrate body 51 is evenly scraped to expose the glass substrate 54 embedded in the recess 52 on the back surface of the silicon substrate body 51. Either glass or silicon may be removed first.
- the glass-embedded silicon substrate manufactured by the above steps is obtained by embedding a part of the glass substrate 54 in the silicon substrate body 51 as shown in FIG. 4E is applied to the wiring 28 shown in FIGS. 2 and 3, and the glass substrate 54 shown in FIG. 4E is replaced with the glass substrate shown in FIGS. Apply to 20.
- the glass-embedded silicon substrate shown in FIG. 4E can be applied to the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS.
- the order of forming the through holes 53 and the recesses 52 may be changed. That is, two or more through holes 53 penetrating between the front surface and the back surface of the silicon substrate body 51 may be formed first, and then the recesses 52 may be formed on the surface of the silicon substrate body 51.
- the through hole 53 may penetrate between the side surface of the recess 52 and the back surface or side surface of the silicon substrate body 51.
- the number of through holes 53 may be single. That is, when the third step is performed, it is only necessary to form one or more through holes 53 that penetrate between the inside of the recess 52 and the outside of the silicon substrate body 51.
- the manufacturing apparatus includes a flat vacuum chuck stage 306 and a heating / pressurizing jig 307.
- the silicon substrate body 51 and the glass substrate 54 are disposed so as to overlap each other between the vacuum chuck stage 306 and the heating / pressurizing jig 307.
- the vacuum chuck stage 306 is made of stainless steel and has one or more holes for evacuating the mounting surface facing the silicon substrate body 51.
- An O-ring 305 is sandwiched between the mounting surface and the silicon substrate body 51 along the outer periphery of the silicon substrate body 51 in order to prevent gas leakage.
- an exhaust port of a vacuum pump such as a rotary pump is connected to a hole of the vacuum chuck stage 306.
- the heating / pressurizing jig 307 includes heating means such as a heater 309 for applying heat to the glass substrate 54 and can apply heat and force to the glass substrate 54 at the same time.
- the apparatus shown in FIG. 5B is another example of a specific manufacturing apparatus for performing the third step.
- 5A is different from the apparatus of FIG. 5A in that a porous chuck stage 308 made of ceramics is used instead of the vacuum chuck stage 306.
- a vacuum leakage prevention jig 309 is disposed along the side surface of the silicon substrate body 51 in order to prevent gas leakage.
- the silicon substrate body 51 and the glass substrate 54 are disposed so as to overlap each other between the vacuum chuck stage 306 and the heating / pressurizing jig 307.
- a vacuum pump is used to evacuate the holes in the vacuum chuck stage 306, and the gas in the through holes 53 and the recesses 52 is exhausted.
- the airtightness between the silicon substrate main body 51 and the glass substrate 54 is sufficiently high, it is difficult for gas to enter the through hole 53 and the recess 52.
- the glass substrate 54 and the silicon substrate body 51 are attracted to the vacuum chuck stage 306 (S01).
- step S03 the heater 309 is turned on to heat the glass substrate 54.
- the softening temperature it is desirable to maintain the softening temperature by controlling the switch of the heater 309 while monitoring the temperature of the glass substrate 54. For example, in the case of Tempax glass, it may be heated to around 820 ° C.
- step S05 the glass substrate 54 and the silicon substrate body 51 are pressed using the heating / pressurizing jig 307. A part of the softened glass substrate 54 is embedded in the recess 52 of the silicon substrate body 51 by the evacuation in the S01 stage, the heat treatment in the S03 stage, and the press process in the S05 stage (third process).
- step S07 If the recess 52 is filled with the softened glass substrate 54 in step S07, the process proceeds to step S09, the vacuum pump is stopped, and the vacuum chuck of the silicon substrate body 51 and the glass substrate 54 is released. . Thereafter, in step S11, the heater 309 is switched off and the glass substrate 54 is cooled using a predetermined cooling means.
- the third step of embedding a part of the softened glass substrate 54 in the recess 52 of the silicon substrate body 51 is performed using the manufacturing apparatus shown in FIGS. 5 (a) and 5 (b).
- the third step in FIG. 4 includes at least steps S03 to S07 in FIG.
- the present invention is not limited to this, and the glass substrate 54 and the silicon substrate body 51 may be bonded by a method such as anodic bonding, surface activation bonding, or resin bonding. I do not care. Thereby, the airtightness in the overlapping surface of the silicon substrate body 51 and the glass substrate 304 can be increased.
- the pressing process in the step S05 in FIG. 6 is not performed. Good.
- the viscosity of the glass substrate 54 decreases. In this case, even if the pressing process is omitted, a part of the glass substrate 54 softened in the recess 52 by the vacuum pressure and the weight of the glass can be embedded.
- positioning of the glass substrate 54 and the silicon substrate main body 51 is replaced, it becomes the dead weight of the silicon substrate main body 51 instead of the dead weight of glass.
- the order of performing steps S09 and S11 may be switched. That is, first, the heater 309 is switched off, and the glass substrate 54 is cooled using a predetermined cooling means. Thereafter, the driving of the vacuum pump may be stopped and the vacuum chucks of the silicon substrate body 51 and the glass substrate 54 may be released.
- a through-hole 53 that penetrates between the inside of the recess 52 and the outside of the silicon substrate body 51 is formed.
- the gas inside the recess 52 escapes to the outside of the silicon substrate body 51 through the through hole 53, so that the glass can be embedded quickly and voids can be suppressed.
- the through hole 53 is formed in the silicon substrate body 51.
- the silicon substrate body 5 is placed on the stages 306 and 308 in which holes for drawing a vacuum are formed. 1 can be adsorbed.
- the pressure inside the recess 52 can be made lower than the pressure outside the glass substrate 54 through the holes in the third step.
- the softened glass is sucked into the recess 52, and voids are less likely to be generated in the recess 52, so that the glass can be embedded more quickly.
- the through hole 203 may be formed in the glass substrate 204. That is, the through hole 203 may penetrate between the inside of the recess 202 and the outside of the glass substrate 204. This also allows gas inside the recess 202 to escape to the outside of the silicon substrate body 51 through the through-hole 203 when the glass is embedded in the recess 52.
- FIG. 7A The process shown in FIG. 7A is the same as the process shown in FIG. As shown in FIG. 7B, a predetermined region on the surface of the silicon substrate body 201 is selectively removed by anisotropic etching such as reactive ion etching (RIE), and a recess 202 is formed on the surface of the silicon substrate body 201. Is formed (first step). Note that no through hole is formed in the silicon substrate body 201.
- anisotropic etching such as reactive ion etching (RIE)
- RIE reactive ion etching
- the first main surface (the lower surface in FIG. 7) of the glass substrate 204 is overlaid on the surface of the silicon substrate body 201 (second step).
- the glass substrate 204 is previously formed with a through hole 203 penetrating between the inside of the recess 202 and the outside of the glass substrate 204 by blasting or laser processing. Thereafter, heat is applied to the glass substrate 204 to raise the temperature of the glass substrate 204 to its softening temperature.
- FIG. 7D a part of the softened glass substrate 204 is embedded in the recess 202 of the silicon substrate body 201 (third step).
- the detailed procedure of the third step is as described with reference to FIG. 6 except that the arrangement order of the glass substrate 54 and the silicon substrate body 51 in FIG. 5 is changed.
- the glass substrate 204 is cooled and re-solidified (fourth step). Thereafter, as shown in FIG. 7E, at least the other part of the glass substrate 204 is removed while leaving the part embedded in the recess 202 of the silicon substrate body 201 (fifth step). Further, the silicon substrate main body 201 is left with a portion between the surface and a plane including the bottom surface of the recess 202, and at least the other portions are removed. Either glass or silicon may be removed first. Further, the glass substrate 204 embedded in the concave portion 202 of the silicon substrate main body 201 or a portion between the surface of the silicon substrate main body 201 and the plane including the bottom surface of the concave portion 202 may be uniformly removed by grinding or CMP. . Thus, the acceleration sensor chip A can be miniaturized by thinning the glass-embedded silicon substrate.
- the glass-embedded silicon substrate manufactured by the above steps is obtained by embedding a part of the glass substrate 204 in the silicon substrate main body 201.
- the configuration is the same as shown. Therefore, the glass embedded silicon substrate according to the second embodiment can be applied to the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS.
- the number of through holes 203 may be plural. That is, when the third step is performed, it is only necessary to form one or more through holes 203 that penetrate between the inside of the recess 202 and the outside of the glass substrate 204.
- the through hole 203 penetrating between the inside of the recess 202 and the outside of the glass substrate 204 is formed in the glass substrate 204.
- the first main surface and the second main surface opposite to the first main surface are described as examples using a flat glass substrate.
- the present invention is not limited to this.
- a glass substrate having a thick portion at a position facing the concave portion of the silicon substrate may be prepared, and the thick portion may be opposed to the concave portion to seal the concave portion. If it does in this way, glass can be embedded more effectively in a crevice.
- this thick portion can be constituted by a convex portion formed on the first main surface or the second main surface, or both main surfaces of the first main surface and the second main surface. You may comprise by forming a convex part in a surface.
- the first convex portion 410 that enters the concave portion 402 is formed on the first main surface of the glass substrate 404, that is, the surface overlapping the silicon substrate body 401. It may be formed. Accordingly, when a part of the glass substrate 404 is embedded in the recess 402, glass already exists in the recess 402, so that voids are less likely to be generated in the recess 402, and the glass can be embedded faster.
- FIGS. 8A and 8B are the same as the steps shown in FIGS. 4A and 4B, and a description thereof will be omitted.
- the first main surface (the lower surface in FIG. 8) of the glass substrate 404 is overlaid on the surface of the silicon substrate body 401 (second step).
- the 1st convex part 410 is formed in the 1st main surface of the glass substrate 404, ie, the surface which overlaps with the silicon substrate main body 401, by blast processing, laser processing, etc. previously.
- the first convex portion 410 enters the concave portion 402.
- the first convex portion 410 that enters the concave portion 402 is formed on the first main surface of the glass substrate 404 when the second step is performed.
- the glass substrate 404 when a part of the glass substrate 404 is embedded in the recess 402, glass already exists in the recess 402, so that voids are less likely to be generated in the recess 402, and the glass can be embedded faster.
- the second convex portion 510 is formed on the second main surface of the glass substrate 504, that is, the surface facing the surface overlapping the silicon substrate body 501. It may be formed.
- FIGS. 9A and 9B are the same as the steps shown in FIGS. 4A and 4B, and the description thereof is omitted.
- the first main surface (the lower surface in FIG. 9) of the glass substrate 504 is overlaid on the surface of the silicon substrate body 501 (second step).
- a second convex portion 510 is formed in advance on the second main surface of the glass substrate 504, that is, the surface facing the surface overlapping the silicon substrate body 501 by blasting or laser processing.
- the second convex portion 510 is formed at the same position as the concave portion 502 when viewed from the normal direction of the first main surface of the glass substrate 504.
- the second convex portion 510 is located at the same position as the concave portion 502 when viewed from the normal direction of the first main surface of the glass substrate 504. Exists. As a result, the force by which the heating / pressurizing jig 307 pushes the glass substrate 504 concentrates on the second convex portion 510, so that voids are less likely to occur in the concave portion 502, and the glass can be embedded faster.
- a forward tapered shape may be provided in at least a part of the recess 602 of the silicon substrate body 601. Thereby, glass can be embedded more efficiently.
- FIG. 10A The process shown in FIG. 10A is the same as the process shown in FIG. As shown in FIG. 10B, for example, a predetermined region on the surface of the silicon substrate body 601 is selectively removed by wet etching having crystal anisotropy to form a recess 602 on the surface of the silicon substrate body 601.
- First step The recess 602 of the silicon substrate body 601 has a forward tapered shape. That is, the cross-sectional area of the recess 602 parallel to the main surface of the silicon substrate body 601 increases from the bottom surface of the recess 602 toward the main surface of the silicon substrate body 601.
- the concave portion 602 can be provided with a forward tapered shape, so that glass can be embedded more efficiently. Therefore, voids are less likely to be generated in the recess 602, and the glass can be embedded faster.
- the forward tapered shape provided in the recess 602 only needs to be formed in at least a part of the recess 602. If it is formed at least partially, the effects of void suppression and high processing speed can be obtained.
- the through holes 53, 203, 403, 503, and 603 are holes penetrating along the normal line of the main surface of the silicon substrate body or the glass substrate.
- the through hole only has to penetrate between the inside and the outside of the recess in order to let the gas inside the recess escape to the outside.
- the through hole may penetrate diagonally between the inside of the recess and the main surface of the silicon substrate body or the glass substrate. Or you may penetrate between the inside of a recessed part, and the side surface of a silicon substrate main body or a glass base.
- the step of forming the recess on the main surface of the silicon substrate body a part of the silicon substrate body made of single crystal silicon is processed to form the recess made of single crystal silicon.
- the step of forming a recess in the main surface of the silicon substrate body is performed by depositing a silicon film made of polycrystalline silicon on the main surface of the silicon substrate body made of single crystal silicon, and removing a portion of the silicon film to form the recess May be formed.
- step S07 in FIG. 6 is performed by filling the inside of the recess 52 with the softened glass substrate 54 and then filling the through hole 53 with the softened glass substrate 54 to soften the glass. Can be stopped before reaching stage 306.
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Abstract
The disclosed manufacturing method for a glass-embedded silicon substrate enables the rapid embedding of glass and suppresses voids. Concave sections (52) are formed on the main surface of a silicon substrate main body (51). A first main surface of a glass substrate (54) is superimposed on the main surface of the silicon substrate main body (51). The glass substrate (54) is softened by applying heat thereto, and part of the glass substrate (54) is embedded in the concave sections (52) of the silicon substrate main body (51). The glass substrate (54) is cooled. The part of the glass substrate (54) embedded in the concave sections (52) of the silicon substrate main body (51) is left behind, and the other part is removed. When the part of the glass substrate (54) is embedded in the concave sections (52) of the silicon substrate main body (51), through holes (53) are formed which connect the inner section and the outer section of the concave sections (52).
Description
本発明は、シリコン基板本体の内部にガラスが配置されたガラス埋込シリコン基板の製造方法に関するものである。
The present invention relates to a method for manufacturing a glass-embedded silicon substrate in which glass is disposed inside a silicon substrate body.
従来から、微細な構造を有するガラス基板を製造する目的で、例えば、特許文献1に記載された技術が知られている。
Conventionally, for example, a technique described in Patent Document 1 is known for the purpose of manufacturing a glass substrate having a fine structure.
特許文献1に記載されたガラス材料からなるフラット基板の製造方法では、先ず、平坦なシリコン基板の表面に窪みを形成し、平坦なガラス基板にシリコン基板の窪みが形成された面を重ね合わせる。そして、ガラス基板を加熱することによりガラス基板の一部をこの窪みの中に埋め込む。その後、ガラス基板を再固化させ、フラット基板の表裏面を研磨し、シリコンを除去する。
特表2004-523124号公報(特に、第1図参照)
In the method for manufacturing a flat substrate made of a glass material described in Patent Document 1, first, a recess is formed on the surface of a flat silicon substrate, and a surface on which the recess of the silicon substrate is formed is superimposed on the flat glass substrate. And a part of glass substrate is embedded in this hollow by heating a glass substrate. Thereafter, the glass substrate is re-solidified, the front and back surfaces of the flat substrate are polished, and silicon is removed.
Japanese translation of PCT publication No. 2004-523124 (in particular, refer to FIG. 1)
しかし、平坦なガラス基板にシリコン基板の窪みが形成された面を重ね合わせると、窪みの内部空間は閉空間となる。よって、ガラス基板の一部をこの窪みの中に埋め込む際に、窪みの内部の気体が逃げにくくなるため、ガラスの埋め込み工程に時間がかかり、プロセス時間の短縮の弊害となる。また、再固化されたガラス材料にボイドが発生し易くなり、製造歩留まりを低下させてしまう。
However, if the surface on which the depression of the silicon substrate is formed is superimposed on a flat glass substrate, the inner space of the depression becomes a closed space. Therefore, when a part of the glass substrate is embedded in the recess, the gas inside the recess is difficult to escape, so that the glass embedding process takes time, which is an adverse effect of shortening the process time. In addition, voids are easily generated in the re-solidified glass material, and the production yield is reduced.
本発明は、上記問題点に鑑みて成されたものであり、その目的は、迅速にガラスを埋め込み、且つボイドの発生を抑制するガラス埋込シリコン基板の製造方法を提供することである。
The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a glass-embedded silicon substrate that quickly embeds glass and suppresses the generation of voids.
上記目的を達成する本発明の特徴は、ガラス埋込シリコン基板の製造方法に関する。この製造方法は、第1の工程~第5の工程を少なくとも備える。第1の工程では、シリコン基板本体の主面に凹部を形成する。第2の工程では、シリコン基板本体の主面にガラス基板の第1の主面を重ね合わせる。第3の工程では、ガラス基板に熱を加えて軟化させて、ガラス基板の一部をシリコン基板本体の凹部に埋め込む。第3の工程を実施する時に、凹部の内部と外部の間を貫通する貫通孔が形成されている。第4の工程では、ガラス基板を冷却する。第5の工程では、ガラス基板のうち、シリコン基板本体の凹部に埋め込まれた部分を残し、他の部分を除去する。
The feature of the present invention that achieves the above object relates to a method for manufacturing a glass-embedded silicon substrate. This manufacturing method includes at least first to fifth steps. In the first step, a recess is formed in the main surface of the silicon substrate body. In the second step, the first main surface of the glass substrate is superimposed on the main surface of the silicon substrate body. In the third step, the glass substrate is softened by applying heat, and a part of the glass substrate is embedded in the recess of the silicon substrate body. When the third step is performed, a through hole penetrating between the inside and the outside of the recess is formed. In the fourth step, the glass substrate is cooled. In the fifth step, the portion of the glass substrate embedded in the recess of the silicon substrate body is left and the other portion is removed.
本発明のガラス埋込シリコン基板の製造方法によれば、ガラスを凹部に埋め込む際に、凹部の内部の気体が貫通孔を通じて外部へ逃げるので、迅速にガラスを埋め込むことができ、且つボイドを抑制することができる。
According to the method of manufacturing a glass-embedded silicon substrate of the present invention, when the glass is embedded in the recess, the gas inside the recess escapes to the outside through the through hole, so that the glass can be embedded quickly and the void is suppressed. can do.
51 シリコン基板本体
52 凹部
53 貫通孔
54 ガラス基板
410 第1の凸部
510 第2の凸部 51 Silicon SubstrateMain Body 52 Concave 53 Through Hole 54 Glass Substrate 410 First Convex 510 Second Convex
52 凹部
53 貫通孔
54 ガラス基板
410 第1の凸部
510 第2の凸部 51 Silicon Substrate
以下図面を参照して、本発明の実施の形態を説明する。図面の記載において同一部分には同一符号を付している。
Embodiments of the present invention will be described below with reference to the drawings. In the description of the drawings, the same parts are denoted by the same reference numerals.
(第1の実施の形態)
図1(a)及び図1(b)を参照して、本発明の第1の実施の形態に係わる半導体装置の概略構成を説明する。半導体装置は、MEMSデバイスの一例としての加速度センサチップAと、加速度センサチップAから出力された信号を処理する信号処理回路が形成された制御ICチップBと、加速度センサチップA及び制御ICチップBが収納された表面実装型のパッケージ101とを備える。 (First embodiment)
With reference to FIGS. 1A and 1B, a schematic configuration of a semiconductor device according to the first embodiment of the present invention will be described. The semiconductor device includes an acceleration sensor chip A as an example of a MEMS device, a control IC chip B on which a signal processing circuit that processes a signal output from the acceleration sensor chip A is formed, and an acceleration sensor chip A and a control IC chip B. Are mounted on the surfacemounting type package 101.
図1(a)及び図1(b)を参照して、本発明の第1の実施の形態に係わる半導体装置の概略構成を説明する。半導体装置は、MEMSデバイスの一例としての加速度センサチップAと、加速度センサチップAから出力された信号を処理する信号処理回路が形成された制御ICチップBと、加速度センサチップA及び制御ICチップBが収納された表面実装型のパッケージ101とを備える。 (First embodiment)
With reference to FIGS. 1A and 1B, a schematic configuration of a semiconductor device according to the first embodiment of the present invention will be described. The semiconductor device includes an acceleration sensor chip A as an example of a MEMS device, a control IC chip B on which a signal processing circuit that processes a signal output from the acceleration sensor chip A is formed, and an acceleration sensor chip A and a control IC chip B. Are mounted on the surface
パッケージ101は、図1(b)における上面に位置する一面が開放された箱形の形状を有するプラスチックパッケージ本体102と、パッケージ101の開放された一面を閉塞するパッケージ蓋(リッド)103とを備える。プラスチックパッケージ本体102は、加速度センサチップA及び制御ICチップBに電気的に接続される複数のリード112を備える。各リード112は、プラスチックパッケージ本体102の外側面から導出されたアウタリード112bと、プラスチックパッケージ本体102の内側面から導出されたインナリード112aとを備える。各インナリード112aは、ボンディングワイヤWを通じて、制御ICチップBが備える各パッドに電気的に接続されている。
The package 101 includes a plastic package main body 102 having a box-like shape with one open surface located on the upper surface in FIG. 1B and a package lid (lid) 103 that closes one open surface of the package 101. . The plastic package body 102 includes a plurality of leads 112 that are electrically connected to the acceleration sensor chip A and the control IC chip B. Each lead 112 includes an outer lead 112 b led out from the outer side surface of the plastic package main body 102 and an inner lead 112 a led out from the inner side surface of the plastic package main body 102. Each inner lead 112a is electrically connected to each pad included in the control IC chip B through a bonding wire W.
加速度センサチップAは、加速度センサチップAの外周形状に基づいて規定した仮想三角形の3つの頂点に対応する3箇所に配置された接着部104により、プラスチックパッケージ本体102の底部に位置する搭載面102aに固着されている。接着部104は、プラスチックパッケージ本体102に連続して一体に突設されている円錐台状の突起部と、この突起部を被覆する接着剤とからなる。接着剤は、例えば、弾性率が1MPa以下のシリコーン樹脂などのシリコーン系樹脂からなる。
The acceleration sensor chip A has a mounting surface 102a located at the bottom of the plastic package main body 102 by the adhesive portions 104 arranged at three locations corresponding to the three vertices of the virtual triangle defined based on the outer peripheral shape of the acceleration sensor chip A. It is fixed to. The adhesive portion 104 includes a frustoconical protrusion that is continuously and integrally provided on the plastic package body 102, and an adhesive that covers the protrusion. The adhesive is made of, for example, a silicone resin such as a silicone resin having an elastic modulus of 1 MPa or less.
ここで、加速度センサチップAが備える総てのパッドは、プラスチックパッケージ本体102の開放された一面に対向する加速度センサチップAの主面において、この主面の1辺に沿って配置されている。この1辺の両端の2箇所と、当該1辺に平行な辺の1箇所(例えば、中央部)との3箇所とに頂点を有する仮想三角形の各頂点に接着部104が位置している。これにより、各パッドにボンディングワイヤWを安定してボンディングすることができる。なお、接着部104の位置に関し、上記1辺に平行な辺の1箇所については、中央部に限らず、例えば、両端の一方でもよいが、中央部の方が半導体素子Aをより安定して支持することができるとともに、各パッドにボンディングワイヤWを安定してボンディングすることができる。
Here, all the pads included in the acceleration sensor chip A are arranged along one side of the main surface of the acceleration sensor chip A facing the open surface of the plastic package main body 102. The adhesive portion 104 is located at each vertex of a virtual triangle having vertices at two locations at both ends of the one side and one location (for example, the central portion) of the side parallel to the one side. Thereby, the bonding wire W can be stably bonded to each pad. Regarding the position of the bonding portion 104, one portion of the side parallel to the one side is not limited to the central portion, and may be, for example, one of both ends, but the central portion makes the semiconductor element A more stable. It can be supported and the bonding wire W can be stably bonded to each pad.
制御ICチップBは、単結晶シリコン等から成る半導体基板上に形成された複数の半導体素子、これらを接続する配線、及び半導体素子や配線を外部環境から保護するパッシベーション膜からなる半導体チップである。そして、制御ICチップBの裏面全体がシリコーン系樹脂によりプラスチックパッケージ本体102の底面に固着されている。制御ICチップB上に形成される信号処理回路は、加速度センサチップAの機能に応じて適宜設計すればよく、加速度センサチップAと協働するものであればよい。例えば、制御ICチップBをASIC(Application Specific IC)として形成することができる。
The control IC chip B is a semiconductor chip composed of a plurality of semiconductor elements formed on a semiconductor substrate made of single crystal silicon or the like, wirings connecting them, and a passivation film that protects the semiconductor elements and wirings from the external environment. The entire back surface of the control IC chip B is fixed to the bottom surface of the plastic package body 102 with a silicone resin. The signal processing circuit formed on the control IC chip B may be appropriately designed according to the function of the acceleration sensor chip A, and may be any one that cooperates with the acceleration sensor chip A. For example, the control IC chip B can be formed as an ASIC (Application Specific IC).
図1の半導体装置を製造するには、先ず、加速度センサチップA及び制御ICチップBをプラスチックパッケージ本体102に固着するダイボンディング工程を行う。そして、加速度センサチップAと制御ICチップBとの間、制御ICチップBとインナリード112aとの間を、それぞれボンディングワイヤWを介して電気的に接続するワイヤボンディング工程を行う。その後、樹脂被覆部116を形成する樹脂被覆部形成工程を行い、続いて、パッケージ蓋(リッド)103の外周を、プラスチックパッケージ本体102に接合するシーリング工程を行う。これにより、プラスチックパッケージ本体102の内部は気密状態で封止される。なお、パッケージ蓋103の適宜部位には、レーザマーキング技術により、製品名称や製造日時などを示す表記113が形成されている。
In order to manufacture the semiconductor device of FIG. 1, first, a die bonding process for fixing the acceleration sensor chip A and the control IC chip B to the plastic package body 102 is performed. Then, a wire bonding step of electrically connecting the acceleration sensor chip A and the control IC chip B and the control IC chip B and the inner lead 112a via the bonding wires W is performed. Thereafter, a resin coating portion forming step for forming the resin coating portion 116 is performed, and subsequently, a sealing step for bonding the outer periphery of the package lid 103 to the plastic package body 102 is performed. Thereby, the inside of the plastic package main body 102 is sealed in an airtight state. Note that a notation 113 indicating a product name, a manufacturing date and the like is formed in an appropriate part of the package lid 103 by a laser marking technique.
なお、制御ICチップBが1枚のシリコン基板を用いて形成されているのに対して、加速度センサチップAは、積層された複数の基板を用いて形成されている。よって、加速度センサチップAの厚みが制御ICチップBの厚みに比べて厚くなっているので、プラスチックパッケージ本体102の底部において加速度センサチップAを搭載する搭載面102aを制御ICチップBの搭載部位よりも凹ませてある。したがって、プラスチックパッケージ本体102の底面について、加速度センサチップAを搭載する部位の厚みは他の部位に比べて薄くなっている。
The control IC chip B is formed using a single silicon substrate, whereas the acceleration sensor chip A is formed using a plurality of stacked substrates. Therefore, since the thickness of the acceleration sensor chip A is thicker than the thickness of the control IC chip B, the mounting surface 102a on which the acceleration sensor chip A is mounted at the bottom of the plastic package body 102 is formed from the mounting portion of the control IC chip B. Is also recessed. Therefore, on the bottom surface of the plastic package main body 102, the thickness of the portion where the acceleration sensor chip A is mounted is thinner than other portions.
更に、本発明の第1の実施の形態では、プラスチックパッケージ本体102の外形を直方体としてあるが、これは一例であり、加速度センサチップAや制御ICチップBの外形、リード112の本数やピッチなどに応じて適宜設定すればよい。
Furthermore, in the first embodiment of the present invention, the outer shape of the plastic package body 102 is a rectangular parallelepiped, but this is only an example, and the outer shape of the acceleration sensor chip A and the control IC chip B, the number of leads 112, the pitch, etc. What is necessary is just to set suitably according to.
プラスチックパッケージ本体102の材料としては、熱可塑性樹脂の一種であって、酸素および水蒸気の透過率が極めて低い液晶性ポリエステル(LCP)を採用する。しかし、LCPに限らず、例えば、ポリフェニレンサルファイト(PPS)、ポリビスアミドトリアゾール(PBT)などを採用してもよい。
As the material of the plastic package body 102, a liquid crystalline polyester (LCP) which is a kind of thermoplastic resin and has extremely low oxygen and water vapor transmission rates is employed. However, not limited to LCP, for example, polyphenylene sulfite (PPS), polybisamide triazole (PBT), or the like may be employed.
また、各リード112の材料、つまり、各リード112の基礎となるリードフレームの材料としては、銅合金の中でもばね性の高いりん青銅を採用する。ここでは、リードフレームとして、材質がりん青銅で板厚が0.2mmのリードフレームを用い、厚みが2μm~4μmのNi膜と、厚みが0.2μm~0.3μmのAu膜との積層膜からなるめっき膜を電解めっき法により形成してある。これにより、ワイヤボンディングの接合信頼性と半田付け信頼性とを両立させることができる。また、熱可塑性樹脂成形品のプラスパッケージ本体102は、リード112が同時一体に成形されている。しかし、熱可塑性樹脂であるLCPにより形成されるプラスチックパッケージ本体102とリード112のAu膜とは密着性が低い。したがって、上述のリードフレームのうちプラスチックパッケージ本体102に埋設される部位にパンチ穴を設けることで各リード112が抜け落ちるのを防止する。
Also, as the material of each lead 112, that is, the material of the lead frame that is the basis of each lead 112, phosphor bronze having a high spring property among copper alloys is adopted. Here, a lead frame made of phosphor bronze and a thickness of 0.2 mm is used as the lead frame, and a laminated film of a Ni film having a thickness of 2 μm to 4 μm and an Au film having a thickness of 0.2 μm to 0.3 μm. A plating film made of is formed by an electrolytic plating method. Thereby, it is possible to achieve both the bonding reliability of wire bonding and the soldering reliability. Further, the plus package body 102 of the thermoplastic resin molded product has leads 112 formed integrally at the same time. However, the adhesion between the plastic package body 102 formed by LCP, which is a thermoplastic resin, and the Au film of the lead 112 is low. Therefore, the lead 112 is prevented from falling off by providing a punch hole in a portion of the above-described lead frame embedded in the plastic package body 102.
また、図1の半導体装置は、インナリード112aの露出部位およびその周囲を覆う樹脂被覆部116が設けられている。樹脂被覆部116は、例えば、アミン系エポキシ樹脂などのエポキシ系樹脂などの非透湿性の樹脂からなる。ワイヤボンディング工程の後に、ディスペンサを用いてこの非透湿性の樹脂を塗布し、これを硬化させることで、気密性を向上させている。なお、この非透湿性の樹脂に代えてセラミックスを用いてもよく、セラミックスを用いる場合には、プラズマ溶射などの技術を用いて局所的に吹き付ければよい。
Further, the semiconductor device of FIG. 1 is provided with a resin coating portion 116 that covers the exposed portion of the inner lead 112a and the periphery thereof. The resin coating portion 116 is made of a moisture-impermeable resin such as an epoxy resin such as an amine epoxy resin. After the wire bonding process, this non-moisture permeable resin is applied using a dispenser and cured to improve airtightness. Note that ceramics may be used instead of the moisture-impermeable resin, and when ceramics are used, they may be sprayed locally using a technique such as plasma spraying.
また、ボンディングワイヤWとしては、Alワイヤに比べて耐腐食性の高いAuワイヤを用いる。また、直径が25μmのAuワイヤを採用するが、これに限らず、例えば、直径が20μm~50μmのAuワイヤから適宜選択すればよい。
Also, as the bonding wire W, an Au wire having higher corrosion resistance than that of an Al wire is used. Further, although an Au wire having a diameter of 25 μm is adopted, the present invention is not limited to this, and for example, an Au wire having a diameter of 20 μm to 50 μm may be appropriately selected.
図2を参照して、図1の加速度センサチップAの概略構成を説明する。加速度センサチップAは、静電容量型の加速度センサチップであって、SOI(Silicon On Insulator)
基板10を用いて形成されたセンサ本体1と、ガラス基板20を用いて形成された第1の固定基板2と、ガラス基板30を用いて形成された第2の固定基板3とを備えている。第1の固定基板2は、センサ本体1の一表面側(図2における上面側)に固着され、第2の固定基板3は、センサ本体1の他表面側(図2における下面側)に固着される。第1及び第2の固定基板2、3はセンサ本体1と同じ外形寸法に形成されている。 A schematic configuration of the acceleration sensor chip A of FIG. 1 will be described with reference to FIG. The acceleration sensor chip A is a capacitance type acceleration sensor chip, which is an SOI (Silicon On Insulator).
A sensormain body 1 formed using a substrate 10, a first fixed substrate 2 formed using a glass substrate 20, and a second fixed substrate 3 formed using a glass substrate 30 are provided. . The first fixed substrate 2 is fixed to one surface side (upper surface side in FIG. 2) of the sensor body 1, and the second fixed substrate 3 is fixed to the other surface side (lower surface side in FIG. 2) of the sensor body 1. Is done. The first and second fixed substrates 2 and 3 are formed to have the same outer dimensions as the sensor body 1.
基板10を用いて形成されたセンサ本体1と、ガラス基板20を用いて形成された第1の固定基板2と、ガラス基板30を用いて形成された第2の固定基板3とを備えている。第1の固定基板2は、センサ本体1の一表面側(図2における上面側)に固着され、第2の固定基板3は、センサ本体1の他表面側(図2における下面側)に固着される。第1及び第2の固定基板2、3はセンサ本体1と同じ外形寸法に形成されている。 A schematic configuration of the acceleration sensor chip A of FIG. 1 will be described with reference to FIG. The acceleration sensor chip A is a capacitance type acceleration sensor chip, which is an SOI (Silicon On Insulator).
A sensor
なお、図2は、センサ本体1、第1の固定基板2及び第2の固定基板3のそれぞれの構成を示すべく、センサ本体1、第1の固定基板2及び第2の固定基板3が分離した状態を示している。また、センサ本体1は、SOI基板10に限らず、例えば、絶縁層を備えない通常のシリコン基板を用いて形成してもよい。また、第1及び第2の固定基板2、3は、それぞれ、シリコン基板及びガラス基板のどちらで形成してもかまわない。
2 shows that the sensor main body 1, the first fixed substrate 2 and the second fixed substrate 3 are separated to show the respective configurations of the sensor main body 1, the first fixed substrate 2 and the second fixed substrate 3. Shows the state. The sensor body 1 is not limited to the SOI substrate 10 and may be formed using, for example, a normal silicon substrate that does not include an insulating layer. Further, the first and second fixed substrates 2 and 3 may be formed of either a silicon substrate or a glass substrate, respectively.
センサ本体1は、2つの平面視矩形状の開口窓12が上記一表面に沿って並設するフレーム部11と、フレーム部11の各開口窓12の内側に配置された2つの平面視矩形状の重り部13と、フレーム部11と重り部13との間を連結する各一対の支持ばね部14とを備える。
The sensor main body 1 includes a frame portion 11 in which two rectangular windows 12 in a plan view are arranged side by side along the one surface, and two rectangular shapes in a plan view arranged inside each open window 12 of the frame portion 11. The weight part 13 and a pair of support spring parts 14 for connecting the frame part 11 and the weight part 13 to each other are provided.
2つの平面視矩形状の重り部13は、第1及び第2の固定基板2、3からそれぞれ離間して配置されている。第1の固定基板2に対向する各重り部13の主面上に可動電極15A、15Bがそれぞれ配置されている。重り部13の周囲を囲むフレーム部11の外周全体が第1及び第2の固定基板2、3に接合されている。これにより、フレーム部11と第1及び第2の固定基板2、3は、重り部13及び後述する固定子16を収納するチップサイズパッケージを構成している。
The two weight parts 13 having a rectangular shape in a plan view are arranged separately from the first and second fixed substrates 2 and 3, respectively. Movable electrodes 15A and 15B are arranged on the main surface of each weight portion 13 facing the first fixed substrate 2, respectively. The entire outer periphery of the frame portion 11 surrounding the weight portion 13 is joined to the first and second fixed substrates 2 and 3. Thus, the frame portion 11 and the first and second fixed substrates 2 and 3 constitute a chip size package that houses the weight portion 13 and a stator 16 described later.
一対の支持ばね部14は、フレーム部11の各開口窓12の内側で重り部13の重心を通る直線に沿って重り部13を挟む形で配置されている。各支持ばね部14は、ねじれ変形が可能なトーションばね(トーションバー)であって、フレーム部11及び重り部13に比べて薄肉に形成されており、重り部13は、フレーム部11に対して一対の支持ばね部14の回りで変位可能となっている。
The pair of support spring portions 14 are arranged so as to sandwich the weight portion 13 along a straight line passing through the center of gravity of the weight portion 13 inside each opening window 12 of the frame portion 11. Each support spring portion 14 is a torsion spring (torsion bar) capable of torsional deformation, and is formed to be thinner than the frame portion 11 and the weight portion 13. It can be displaced around the pair of support spring portions 14.
センサ本体1のフレーム部11には、各開口窓12それぞれに連通する平面視矩形状の窓孔17が2つの開口窓12と同じ方向に並設されている。各窓孔17の内側には、それぞれ2つの固定子16が一対の支持ばね部14の並設方向に沿って配置されている。
In the frame portion 11 of the sensor body 1, a rectangular window hole 17 in plan view that communicates with each opening window 12 is arranged in the same direction as the two opening windows 12. Inside each window hole 17, two stators 16 are arranged along the direction in which the pair of support spring portions 14 are arranged side by side.
各固定子16と窓孔17の内周面との間、各固定子16と重り部13の外周面との間、及び隣り合う固定子16同士の間には、それぞれ隙間が形成され、互いに分離独立して電気的に絶縁されている。各固定子16は、第1及び第2の固定基板2、3にそれぞれ接合されている。また、センサ本体1の一表面側において、各固定子16には、例えば、Al-Si膜などの金属薄膜からなる円形状の電極パッド18が形成されている。また同様に、フレーム部11において隣り合う窓孔17の間の部位にも、例えば、Al-Si膜などの金属薄膜からなる円形状の電極パッド18が形成されている。
A gap is formed between each stator 16 and the inner peripheral surface of the window hole 17, between each stator 16 and the outer peripheral surface of the weight portion 13, and between adjacent stators 16. Separated and independently electrically insulated. Each stator 16 is joined to the first and second fixed substrates 2 and 3, respectively. In addition, on one surface side of the sensor body 1, each stator 16 is formed with a circular electrode pad 18 made of a metal thin film such as an Al—Si film. Similarly, a circular electrode pad 18 made of, for example, a metal thin film such as an Al—Si film is formed in a portion between adjacent window holes 17 in the frame portion 11.
各固定子16に形成された各電極パッド18は、後述の各固定電極25に電気的にそれぞれ接続され、フレーム部11に形成された電極パッド18は、可動電極15A及び可動電極15Bに電気的に接続されている。以上説明した複数の電極パッド18は、加速度センサチップAの矩形状の外周形状の1辺に沿って配置されている。
Each electrode pad 18 formed on each stator 16 is electrically connected to each fixed electrode 25 described later, and the electrode pad 18 formed on the frame portion 11 is electrically connected to the movable electrode 15A and the movable electrode 15B. It is connected to the. The plurality of electrode pads 18 described above are arranged along one side of the rectangular outer peripheral shape of the acceleration sensor chip A.
第1の固定基板2は、第1の固定基板2の第1の主面とこれに対向する第2の主面(センサ本体1に重なり合う面)との間を貫通している複数の配線28と、第2の主面上に形成された複数の固定電極25とを備える。
The first fixed substrate 2 includes a plurality of wirings 28 penetrating between a first main surface of the first fixed substrate 2 and a second main surface (a surface overlapping the sensor main body 1) facing the first main surface. And a plurality of fixed electrodes 25 formed on the second main surface.
固定電極25Aa及び固定電極25Abは、対を成して可動電極15Aに対向して配置されている。同様に、固定電極25Ba及び固定電極25Bbは、対を成して可動電極15Bに対向して配置されている。各固定電極25は、例えば、Al-Si膜などの金属薄膜からなる。
The fixed electrode 25Aa and the fixed electrode 25Ab are arranged in a pair so as to face the movable electrode 15A. Similarly, the fixed electrode 25Ba and the fixed electrode 25Bb are arranged in a pair so as to face the movable electrode 15B. Each fixed electrode 25 is made of a metal thin film such as an Al—Si film, for example.
各配線28は、第1の固定基板2の第2の主面において、センサ本体1の電極パッド18にそれぞれ電気的に接続されている。これにより、電極パッド18を介して、各固定電極25の電位及び可動電極15の電位をそれぞれ加速度センサチップAの外部へ取り出すことができる。
Each wiring 28 is electrically connected to the electrode pad 18 of the sensor body 1 on the second main surface of the first fixed substrate 2. As a result, the potential of each fixed electrode 25 and the potential of the movable electrode 15 can be taken out from the acceleration sensor chip A via the electrode pad 18.
第2の固定基板3の一表面(センサ本体1に重なり合う面)であって、重り部13と対応する位置に、例えば、Al-Si膜などの金属薄膜からなる付着防止膜35が配置されている。付着防止膜35は、変位する重り部13の付着を防止する。
An adhesion preventing film 35 made of a metal thin film such as an Al—Si film is disposed on one surface of the second fixed substrate 3 (a surface overlapping the sensor body 1) and at a position corresponding to the weight portion 13. Yes. The adhesion preventing film 35 prevents adhesion of the weight part 13 that is displaced.
図3を参照して、図2の加速度センサチップAの断面構成を説明する。図3は、一対の支持ばね部14を通る直線に垂直な切断面における加速度センサチップAの構成を示す。センサ本体1はSOI基板10を用いて形成されている。SOI基板10は、単結晶シリコンからなる支持基板10aと、支持基板10aの上に配置されたシリコン酸化膜からなる絶縁層10bと、絶縁層10bの上に配置されたn形のシリコン層(活性層)10cとを有する。
Referring to FIG. 3, the cross-sectional configuration of the acceleration sensor chip A in FIG. 2 will be described. FIG. 3 shows a configuration of the acceleration sensor chip A on a cut surface perpendicular to a straight line passing through the pair of support spring portions 14. The sensor body 1 is formed using an SOI substrate 10. The SOI substrate 10 includes a support substrate 10a made of single crystal silicon, an insulating layer 10b made of a silicon oxide film arranged on the support substrate 10a, and an n-type silicon layer (active) arranged on the insulating layer 10b. Layer) 10c.
センサ本体1のうち、フレーム11及び固定子16は、第1の固定基板2及び第2の固定基板3に接合されている。これに対して、重り部13は、第1及び第2の固定基板2、3からそれぞれ離間して配置され、一対の支持ばね部14によりフレーム11に支持されている。
In the sensor body 1, the frame 11 and the stator 16 are joined to the first fixed substrate 2 and the second fixed substrate 3. On the other hand, the weight portion 13 is disposed separately from the first and second fixed substrates 2 and 3, and is supported by the frame 11 by a pair of support spring portions 14.
重り部13の過度の変位を規制する複数の微小な突起部13cが、重り部13における第1及び第2の固定基板2、3のそれぞれとの対向面から突設されている。重り部13には、矩形状に開口された凹部13a、13bが形成されている。凹部13a、13bは互いに大きさが異なるため、一対の支持ばね部14を通る直線を境にして、重り部13の左右の質量が異なっている。
A plurality of minute protrusions 13 c that restrict excessive displacement of the weight part 13 are provided so as to protrude from the surfaces of the weight part 13 facing the first and second fixed substrates 2 and 3. The weight portion 13 is formed with concave portions 13a and 13b opened in a rectangular shape. Since the sizes of the recesses 13a and 13b are different from each other, the masses on the left and right of the weight portion 13 are different from each other with a straight line passing through the pair of support spring portions 14 as a boundary.
第1の固定基板2の配線28は、電極パッド18に電気的に接続されている。電極パッド18は、固定子16、連絡用導体部16d、金属配線26を通じて、固定電極25に接続されている。
The wiring 28 of the first fixed substrate 2 is electrically connected to the electrode pad 18. The electrode pad 18 is connected to the fixed electrode 25 through the stator 16, the connecting conductor portion 16 d, and the metal wiring 26.
上述の加速度センサチップAは、センサ本体1に設けられた可動電極15と第1の固定基板2に設けられた固定電極25との対を4対有し、可動電極15と固定電極25との対ごとに可変容量コンデンサが構成されている。加速度センサチップA、すなわち重り部13に加速度が加わると、支持ばね部14がねじれて、重り部13が変位する。これにより、対をなす固定電極25と可動電極15との対向面積及び間隔が変化し、可変容量コンデンサの静電容量が変化する。よって、加速度センサチップAは、この静電容量の変化から加速度を検出することができる。
The acceleration sensor chip A described above has four pairs of the movable electrode 15 provided on the sensor body 1 and the fixed electrode 25 provided on the first fixed substrate 2. A variable capacitor is configured for each pair. When acceleration is applied to the acceleration sensor chip A, that is, the weight portion 13, the support spring portion 14 is twisted and the weight portion 13 is displaced. As a result, the facing area and interval between the paired fixed electrode 25 and movable electrode 15 change, and the capacitance of the variable capacitor changes. Therefore, the acceleration sensor chip A can detect acceleration from the change in capacitance.
次に、図4(a)~図4(e)を参照して、図2及び図3に示した第1の固定基板2の形成に用いられるガラス基板20の一例としてのガラス埋込シリコン基板の製造方法について説明する。
Next, referring to FIGS. 4A to 4E, a glass-embedded silicon substrate as an example of the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS. The manufacturing method will be described.
(イ)先ず、図4(a)に示すように、対向する表面(図4における上面)及び裏面(図4における下面)を有するシリコン基板本体51を用意する。シリコン基板本体51の全体には、p型或いはn型の不純物が添加され、シリコン基板本体51の電気抵抗は十分に小さい。なお、ここでは、シリコン基板本体51の全体に不純物を添加する場合を説明するが、シリコン基板本体51全体に添加されていなくても構わない。少なくとも、図4(e)の配線として残す部分の深さまで不純物が添加されていればよい。そして、図4(b)に示すように、TMAH(水酸化テトラメチルアンモニウム)水溶液をエッチャントとするウェットエッチングや反応性イオンエッチング(RIE)などのドライエッチングによりシリコン基板本体51の表面の所定領域を選択的に除去して、シリコン基板本体51の表面に凹部52を形成する(第1の工程)。その後、RIEなどの異方性エッチングにより凹部52の底面の所定領域を選択的に除去して、凹部52の底面とシリコン基板本体51の裏面との間を貫通する1又は2以上の貫通孔53を形成する。
(A) First, as shown in FIG. 4A, a silicon substrate body 51 having a front surface (upper surface in FIG. 4) and a rear surface (lower surface in FIG. 4) is prepared. A p-type or n-type impurity is added to the entire silicon substrate body 51, and the electrical resistance of the silicon substrate body 51 is sufficiently small. Here, a case where an impurity is added to the entire silicon substrate body 51 will be described. However, the impurity may not be added to the entire silicon substrate body 51. It is sufficient that impurities are added at least to the depth of the portion to be left as the wiring in FIG. 4B, a predetermined region on the surface of the silicon substrate body 51 is formed by dry etching such as wet etching or reactive ion etching (RIE) using a TMAH (tetramethylammonium hydroxide) aqueous solution as an etchant. The recess 52 is formed on the surface of the silicon substrate body 51 by selectively removing it (first step). Thereafter, a predetermined region on the bottom surface of the recess 52 is selectively removed by anisotropic etching such as RIE, and one or more through holes 53 penetrating between the bottom surface of the recess 52 and the back surface of the silicon substrate body 51 are formed. Form.
(ロ)次に、図4(c)に示すように、シリコン基板本体51の表面にガラス基板の第1の主面(図4における下面)を重ね合わせる(第2の工程)。ガラス基板54に熱を加えて、ガラス基板54の温度をその軟化温度まで上昇させる。そして、図4(d)に示すように、軟化したガラス基板54の一部をシリコン基板本体51の凹部52に埋め込む(第3の工程)。第3の工程の詳細な手順は、図5及び図6を参照して後述する。
(B) Next, as shown in FIG. 4C, the first main surface (the lower surface in FIG. 4) of the glass substrate is overlaid on the surface of the silicon substrate body 51 (second step). Heat is applied to the glass substrate 54 to raise the temperature of the glass substrate 54 to its softening temperature. And as shown in FIG.4 (d), a part of softened glass substrate 54 is embedded in the recessed part 52 of the silicon substrate main body 51 (3rd process). The detailed procedure of the third step will be described later with reference to FIGS.
(ハ)ガラス基板54を冷却して、再固化させる(第4の工程)。その後、図4(e)に示すように、ガラス基板54のうち、シリコン基板本体51の凹部52に埋め込まれた部分を残し、他の部分を除去する(第5の工程)。また、シリコン基板本体51のうち、その表面と凹部52の底面を含む平面との間にある部分を残し、その他の部分を除去する。
(C) The glass substrate 54 is cooled and re-solidified (fourth step). Then, as shown in FIG.4 (e), the part embedded in the recessed part 52 of the silicon substrate main body 51 is left among glass substrates 54, and another part is removed (5th process). Further, the silicon substrate body 51 is left with a portion between the surface and the plane including the bottom surface of the recess 52, and the other portions are removed.
具体的には、ダイヤモンド砥石を用いた研削、化学機械研磨(CMP)等の研磨、或いはRIEなどのドライエッチングやHFによるウェットエッチングなどの方法を用いて、ガラス基板54の第2の主面(図4における上面)を均一に削り取り、ガラス基板54の第2の主面にシリコン基板本体51を露出させる。同様に、研削、研磨、或いはエッチングなどの方法を用いて、シリコン基板本体51の裏面を均一に削り取り、シリコン基板本体51の裏面に凹部52に埋め込まれたガラス基板54を露出させる。ガラスとシリコンの除去はどちらを先に行っても構わない。
Specifically, the second main surface of the glass substrate 54 (such as grinding using a diamond grindstone, polishing such as chemical mechanical polishing (CMP), or dry etching such as RIE or wet etching using HF is used. The upper surface in FIG. 4 is uniformly scraped to expose the silicon substrate body 51 on the second main surface of the glass substrate 54. Similarly, using a method such as grinding, polishing, or etching, the back surface of the silicon substrate body 51 is evenly scraped to expose the glass substrate 54 embedded in the recess 52 on the back surface of the silicon substrate body 51. Either glass or silicon may be removed first.
以上の工程により製造されたガラス埋込シリコン基板は、図4(e)に示すように、シリコン基板本体51にガラス基板54の一部が埋め込まれたものである。よって、図4(e)のシリコン基板本体51の部分を図2及び図3に示した配線28に当てはめ、図4(e)のガラス基板54の部分を図2及び図3に示したガラス基板20に当てはめる。これにより、図2及び図3に示した第1の固定基板2の形成に用いられるガラス基板20に、図4(e)に示したガラス埋込シリコン基板を適用することができる。
The glass-embedded silicon substrate manufactured by the above steps is obtained by embedding a part of the glass substrate 54 in the silicon substrate body 51 as shown in FIG. 4E is applied to the wiring 28 shown in FIGS. 2 and 3, and the glass substrate 54 shown in FIG. 4E is replaced with the glass substrate shown in FIGS. Apply to 20. As a result, the glass-embedded silicon substrate shown in FIG. 4E can be applied to the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS.
なお、貫通孔53と凹部52の形成順序を入れ替えても構わない。つまり、先に、シリコン基板本体51の表面と裏面との間を貫通する2以上の貫通孔53を形成し、その後、シリコン基板本体51の表面に凹部52を形成しても構わない。また、貫通孔53は、凹部52の側面とシリコン基板本体51の裏面或いは側面との間を貫通していても構わない。更に、貫通孔53の数は、単数であってもよい。すなわち、第3の工程を実施する時に、凹部52の内部とシリコン基板本体51の外部の間を貫通する貫通孔53が1つ以上形成されていればよい。
Note that the order of forming the through holes 53 and the recesses 52 may be changed. That is, two or more through holes 53 penetrating between the front surface and the back surface of the silicon substrate body 51 may be formed first, and then the recesses 52 may be formed on the surface of the silicon substrate body 51. The through hole 53 may penetrate between the side surface of the recess 52 and the back surface or side surface of the silicon substrate body 51. Further, the number of through holes 53 may be single. That is, when the third step is performed, it is only necessary to form one or more through holes 53 that penetrate between the inside of the recess 52 and the outside of the silicon substrate body 51.
図5(a)及び図5(b)を参照して、図4(d)に示した第3の工程を実施する為の具体的な製造装置の構成を説明する。図5(a)に示すように、この製造装置は、共に平板状の真空チャックステージ306と加熱・加圧治具307とを備える。シリコン基板本体51とガラス基板54は、真空チャックステージ306と加熱・加圧治具307との間に重ね合わせて配置される。
With reference to FIGS. 5A and 5B, a specific configuration of the manufacturing apparatus for performing the third step shown in FIG. 4D will be described. As shown in FIG. 5A, the manufacturing apparatus includes a flat vacuum chuck stage 306 and a heating / pressurizing jig 307. The silicon substrate body 51 and the glass substrate 54 are disposed so as to overlap each other between the vacuum chuck stage 306 and the heating / pressurizing jig 307.
真空チャックステージ306は、ステンレスから成り、シリコン基板本体51に対向する載置面に真空引きを行うための1又は2以上の穴を備える。この載置面とシリコン基板本体51との間には、気体の漏れを防ぐ為に、シリコン基板本体51の外周に沿ってOリング305が挟まれている。図示は省略するが、ロータリーポンプなどの真空ポンプの排気口が、真空チャックステージ306の穴に接続される。この真空ポンプを用いて、真空チャックステージ306の穴から真空引きを行うと、貫通孔53及び凹部52内の気体を排気することができる。
The vacuum chuck stage 306 is made of stainless steel and has one or more holes for evacuating the mounting surface facing the silicon substrate body 51. An O-ring 305 is sandwiched between the mounting surface and the silicon substrate body 51 along the outer periphery of the silicon substrate body 51 in order to prevent gas leakage. Although not shown, an exhaust port of a vacuum pump such as a rotary pump is connected to a hole of the vacuum chuck stage 306. When vacuuming is performed from the hole of the vacuum chuck stage 306 using this vacuum pump, the gas in the through hole 53 and the recess 52 can be exhausted.
加熱・加圧治具307は、ガラス基板54に対して熱を加えるヒータ309等の加熱手段を備え、ガラス基板54に対して熱と力を同時に加えることができる。
The heating / pressurizing jig 307 includes heating means such as a heater 309 for applying heat to the glass substrate 54 and can apply heat and force to the glass substrate 54 at the same time.
図5(b)に示す装置も、第3の工程を実施する為の具体的な製造装置の他の例である。図5(a)の装置と比べて、真空チャックステージ306の代りに、セラミックスから成るポーラスチャックステージ308を用いている点が異なる。ポーラスチャックステージ308の場合、ポーラスの粒の隙間から真空引きを行う。また、Oリング305の代りに、真空漏れ防止治具309が、気体の漏れを防ぐ為に、シリコン基板本体51の側面に沿って配置されている。
The apparatus shown in FIG. 5B is another example of a specific manufacturing apparatus for performing the third step. 5A is different from the apparatus of FIG. 5A in that a porous chuck stage 308 made of ceramics is used instead of the vacuum chuck stage 306. In the case of the porous chuck stage 308, vacuuming is performed from the gap between the porous grains. Further, instead of the O-ring 305, a vacuum leakage prevention jig 309 is disposed along the side surface of the silicon substrate body 51 in order to prevent gas leakage.
次に、図6を参照して、図5(a)及び図5(b)に示した製造装置を用いて行う第3の工程の詳細な手順を説明する。
Next, with reference to FIG. 6, the detailed procedure of the third step performed using the manufacturing apparatus shown in FIGS. 5 (a) and 5 (b) will be described.
(い)シリコン基板本体51とガラス基板54を、真空チャックステージ306と加熱・加圧治具307との間に重ね合わせて配置する。真空ポンプを用いて、真空チャックステージ306の穴から真空引きを行い、貫通孔53及び凹部52内の気体を排気する。シリコン基板本体51とガラス基板54との間で気密性が十分に高い場合、貫通孔53及び凹部52には気体が入り込みにくい。これにより、ガラス基板54及びシリコン基板本体51が真空チャックステージ306に吸着する(S01)。
(Ii) The silicon substrate body 51 and the glass substrate 54 are disposed so as to overlap each other between the vacuum chuck stage 306 and the heating / pressurizing jig 307. A vacuum pump is used to evacuate the holes in the vacuum chuck stage 306, and the gas in the through holes 53 and the recesses 52 is exhausted. When the airtightness between the silicon substrate main body 51 and the glass substrate 54 is sufficiently high, it is difficult for gas to enter the through hole 53 and the recess 52. As a result, the glass substrate 54 and the silicon substrate body 51 are attracted to the vacuum chuck stage 306 (S01).
(ろ)S03段階において、ヒータ309のスイッチを入れて、ガラス基板54を加熱する。なお、ガラス基板54の温度をその軟化温度まで上昇させた後、ヒータ309のスイッチを、ガラス基板54の温度をモニターしながら制御して軟化温度を維持することが望ましい。例えば、テンパックスガラスの場合、820℃付近まで加熱すればよい。
(B) In step S03, the heater 309 is turned on to heat the glass substrate 54. In addition, after raising the temperature of the glass substrate 54 to the softening temperature, it is desirable to maintain the softening temperature by controlling the switch of the heater 309 while monitoring the temperature of the glass substrate 54. For example, in the case of Tempax glass, it may be heated to around 820 ° C.
(は)S05段階において、加熱・加圧治具307を用いて、ガラス基板54とシリコン基板本体51をプレスする。S01段階の真空引き、S03段階の加熱処理、そして、S05段階のプレス処理によって、軟化したガラス基板54の一部は、シリコン基板本体51の凹部52に埋め込まれる(第3の工程)。
(Ha) In step S05, the glass substrate 54 and the silicon substrate body 51 are pressed using the heating / pressurizing jig 307. A part of the softened glass substrate 54 is embedded in the recess 52 of the silicon substrate body 51 by the evacuation in the S01 stage, the heat treatment in the S03 stage, and the press process in the S05 stage (third process).
(に)S07段階において、凹部52の中が軟化したガラス基板54によって充填された場合、S09段階に進み、真空ポンプの駆動を停止し、シリコン基板本体51及びガラス基板54の真空チャックを解除する。その後、S11段階において、ヒータ309のスイッチを切り、所定の冷却手段を用いて、ガラス基板54を冷却する。
(Ii) If the recess 52 is filled with the softened glass substrate 54 in step S07, the process proceeds to step S09, the vacuum pump is stopped, and the vacuum chuck of the silicon substrate body 51 and the glass substrate 54 is released. . Thereafter, in step S11, the heater 309 is switched off and the glass substrate 54 is cooled using a predetermined cooling means.
このように、図5(a)及び図5(b)に示した製造装置を用いて、軟化したガラス基板54の一部をシリコン基板本体51の凹部52に埋め込む第3の工程を実施する。図4における第3の工程には、少なくとも、図6におけるS03~S07段階が含まれる。
As described above, the third step of embedding a part of the softened glass substrate 54 in the recess 52 of the silicon substrate body 51 is performed using the manufacturing apparatus shown in FIGS. 5 (a) and 5 (b). The third step in FIG. 4 includes at least steps S03 to S07 in FIG.
なお、ガラス基板54とシリコン基板本体51の重ね合わせ及び固定を真空圧によって実現する場合を示したが、これに限らず、陽極接合、表面活性化結合、樹脂接着などの方法により接合しても構わない。これにより、シリコン基板本体51とガラス基板304との重ね合わせ面での気密性を高くすることができる。
Although the case where the glass substrate 54 and the silicon substrate body 51 are overlapped and fixed by vacuum pressure has been shown, the present invention is not limited to this, and the glass substrate 54 and the silicon substrate body 51 may be bonded by a method such as anodic bonding, surface activation bonding, or resin bonding. I do not care. Thereby, the airtightness in the overlapping surface of the silicon substrate body 51 and the glass substrate 304 can be increased.
また、軟化したガラス基板54の一部をシリコン基板本体51の凹部52に埋め込むために、ガラスの自重及び真空圧による力で十分である場合、図6のS05段階のプレス処理を行わなくてもよい。例えば、ガラス基板54の温度を高くすることにより、ガラス基板54の粘性が低下する。この場合、プレス処理を省略しても、真空圧及びガラスの自重により凹部52に軟化したガラス基板54の一部を埋め込むことができる。なお、ガラス基板54とシリコン基板本体51の配置を入れ替えた場合、ガラスの自重の代りに、シリコン基板本体51の自重となる。
Further, in order to embed a part of the softened glass substrate 54 in the recess 52 of the silicon substrate body 51, when the glass weight and the force by the vacuum pressure are sufficient, the pressing process in the step S05 in FIG. 6 is not performed. Good. For example, by increasing the temperature of the glass substrate 54, the viscosity of the glass substrate 54 decreases. In this case, even if the pressing process is omitted, a part of the glass substrate 54 softened in the recess 52 by the vacuum pressure and the weight of the glass can be embedded. In addition, when arrangement | positioning of the glass substrate 54 and the silicon substrate main body 51 is replaced, it becomes the dead weight of the silicon substrate main body 51 instead of the dead weight of glass.
更に、軟化したガラス基板54の一部をシリコン基板本体51の凹部52に埋め込むために、ガラスの自重による力だけで十分である場合、プレス処理のみならず、真空引きを省略しても構わない。
Further, in order to embed a part of the softened glass substrate 54 in the recess 52 of the silicon substrate body 51, when only the force due to the weight of the glass is sufficient, not only the pressing process but also the evacuation may be omitted. .
更に、図6において、S09段階とS11段階の実施順序を入れ替えてもかまわない。つまり、先ず、ヒータ309のスイッチを切り、所定の冷却手段を用いて、ガラス基板54を冷却する。その後、真空ポンプの駆動を停止し、シリコン基板本体51及びガラス基板54の真空チャックを解除してもよい。
Furthermore, in FIG. 6, the order of performing steps S09 and S11 may be switched. That is, first, the heater 309 is switched off, and the glass substrate 54 is cooled using a predetermined cooling means. Thereafter, the driving of the vacuum pump may be stopped and the vacuum chucks of the silicon substrate body 51 and the glass substrate 54 may be released.
以上説明したように、本発明の第1の実施の形態によれば、以下の作用効果が得られる。
As described above, according to the first embodiment of the present invention, the following operational effects can be obtained.
ガラスを凹部52に埋め込む図4の第3の工程を実施する時に、凹部52の内部とシリコン基板本体51の外部の間を貫通する貫通孔53が形成されている。これにより、ガラスを凹部52に埋め込む際に、凹部52の内部の気体が貫通孔53を通じてシリコン基板本体51の外部へ逃げるので、迅速にガラスを埋め込むことができ、且つボイドを抑制することができる。
When the third step of FIG. 4 for embedding glass in the recess 52 is performed, a through-hole 53 that penetrates between the inside of the recess 52 and the outside of the silicon substrate body 51 is formed. Thus, when the glass is embedded in the recess 52, the gas inside the recess 52 escapes to the outside of the silicon substrate body 51 through the through hole 53, so that the glass can be embedded quickly and voids can be suppressed. .
貫通孔53はシリコン基板本体51に形成されている。これにより、図5に示したように、真空を引くための孔が形成されたステージ306、308の上にシリコン基板本体5
1を吸着させることができる。そして、シリコン基板本体51及びガラス基板54を固定すると同時に、第3の工程において、孔を通じて、凹部52の内部の気圧をガラス基板54の外部の気圧よりも低くすることができる。これにより、軟化したガラスが凹部52の内部へ吸引され、凹部52にボイドがより発生しにくくなり、より速くガラスを埋め込むことができる。真空ポンプの排気能力を高めて、凹部52の内部の真空度を高めることにより、ガラスを埋め込む処理速度が速くなる。 The throughhole 53 is formed in the silicon substrate body 51. As a result, as shown in FIG. 5, the silicon substrate body 5 is placed on the stages 306 and 308 in which holes for drawing a vacuum are formed.
1 can be adsorbed. At the same time as fixing thesilicon substrate body 51 and the glass substrate 54, the pressure inside the recess 52 can be made lower than the pressure outside the glass substrate 54 through the holes in the third step. As a result, the softened glass is sucked into the recess 52, and voids are less likely to be generated in the recess 52, so that the glass can be embedded more quickly. By increasing the exhaust capacity of the vacuum pump and increasing the degree of vacuum inside the recess 52, the processing speed of embedding glass increases.
1を吸着させることができる。そして、シリコン基板本体51及びガラス基板54を固定すると同時に、第3の工程において、孔を通じて、凹部52の内部の気圧をガラス基板54の外部の気圧よりも低くすることができる。これにより、軟化したガラスが凹部52の内部へ吸引され、凹部52にボイドがより発生しにくくなり、より速くガラスを埋め込むことができる。真空ポンプの排気能力を高めて、凹部52の内部の真空度を高めることにより、ガラスを埋め込む処理速度が速くなる。 The through
1 can be adsorbed. At the same time as fixing the
(第2の実施の形態)
図7(c)に示すように、貫通孔203は、ガラス基板204に形成されていても構わない。即ち、貫通孔203は、凹部202の内部とガラス基板204の外部の間を貫通していても構わない。これによっても、ガラスを凹部52に埋め込む際に、凹部202の内部の気体を、貫通孔203を通じてシリコン基板本体51の外部へ逃がすことができる。 (Second Embodiment)
As shown in FIG. 7C, the throughhole 203 may be formed in the glass substrate 204. That is, the through hole 203 may penetrate between the inside of the recess 202 and the outside of the glass substrate 204. This also allows gas inside the recess 202 to escape to the outside of the silicon substrate body 51 through the through-hole 203 when the glass is embedded in the recess 52.
図7(c)に示すように、貫通孔203は、ガラス基板204に形成されていても構わない。即ち、貫通孔203は、凹部202の内部とガラス基板204の外部の間を貫通していても構わない。これによっても、ガラスを凹部52に埋め込む際に、凹部202の内部の気体を、貫通孔203を通じてシリコン基板本体51の外部へ逃がすことができる。 (Second Embodiment)
As shown in FIG. 7C, the through
図7を参照して、本発明の第2の実施の形態に係わるガラス埋込シリコン基板の製造方法を説明する。
Referring to FIG. 7, a method for manufacturing a glass-embedded silicon substrate according to the second embodiment of the present invention will be described.
(イ)図7(a)に示す工程は、図4(a)に示した工程と同じであり、説明を省略する。図7(b)に示すように、反応性イオンエッチング(RIE)などの異方性エッチングによりシリコン基板本体201の表面の所定領域を選択的に除去して、シリコン基板本体201の表面に凹部202を形成する(第1の工程)。なお、シリコン基板本体201に貫通孔は形成しない。
(A) The process shown in FIG. 7A is the same as the process shown in FIG. As shown in FIG. 7B, a predetermined region on the surface of the silicon substrate body 201 is selectively removed by anisotropic etching such as reactive ion etching (RIE), and a recess 202 is formed on the surface of the silicon substrate body 201. Is formed (first step). Note that no through hole is formed in the silicon substrate body 201.
(ロ)次に、図7(c)に示すように、シリコン基板本体201の表面にガラス基板204の第1の主面(図7における下面)を重ね合わせる(第2の工程)。なお、ガラス基板204には、ブラスト加工やレーザー加工などにより、予め、凹部202の内部とガラス基板204の外部の間を貫通する貫通孔203が形成されている。その後、ガラス基板204に熱を加えて、ガラス基板204の温度をその軟化温度まで上昇させる。そして、図7(d)に示すように、軟化したガラス基板204の一部をシリコン基板本体201の凹部202に埋め込む(第3の工程)。第3の工程の詳細な手順は、図5におけるガラス基板54とシリコン基板本体51の配置順序を入れ替える点を除き、図6を参照して説明したとおりである。
(B) Next, as shown in FIG. 7C, the first main surface (the lower surface in FIG. 7) of the glass substrate 204 is overlaid on the surface of the silicon substrate body 201 (second step). The glass substrate 204 is previously formed with a through hole 203 penetrating between the inside of the recess 202 and the outside of the glass substrate 204 by blasting or laser processing. Thereafter, heat is applied to the glass substrate 204 to raise the temperature of the glass substrate 204 to its softening temperature. Then, as shown in FIG. 7D, a part of the softened glass substrate 204 is embedded in the recess 202 of the silicon substrate body 201 (third step). The detailed procedure of the third step is as described with reference to FIG. 6 except that the arrangement order of the glass substrate 54 and the silicon substrate body 51 in FIG. 5 is changed.
(ハ)ガラス基板204を冷却して、再固化させる(第4の工程)。その後、図7(e)に示すように、ガラス基板204のうち、シリコン基板本体201の凹部202に埋め込まれた部分を残し、少なくとも他の部分を除去する(第5の工程)。また、シリコン基板本体201のうち、その表面と凹部202の底面を含む平面との間にある部分を残し、少なくともその他の部分を除去する。ガラスとシリコンの除去はどちらを先に行っても構わない。また、シリコン基板本体201の凹部202に埋め込まれたガラス基板204や、シリコン基板本体201の表面と凹部202の底面を含む平面との間にある部分を研削やCMPなどにより均一に削り取ってもよい。これにより、ガラス埋込シリコン基板を薄膜化して、加速度センサチップAを微細化することができる。
(C) The glass substrate 204 is cooled and re-solidified (fourth step). Thereafter, as shown in FIG. 7E, at least the other part of the glass substrate 204 is removed while leaving the part embedded in the recess 202 of the silicon substrate body 201 (fifth step). Further, the silicon substrate main body 201 is left with a portion between the surface and a plane including the bottom surface of the recess 202, and at least the other portions are removed. Either glass or silicon may be removed first. Further, the glass substrate 204 embedded in the concave portion 202 of the silicon substrate main body 201 or a portion between the surface of the silicon substrate main body 201 and the plane including the bottom surface of the concave portion 202 may be uniformly removed by grinding or CMP. . Thus, the acceleration sensor chip A can be miniaturized by thinning the glass-embedded silicon substrate.
以上の工程により製造されたガラス埋込シリコン基板は、図7(e)に示すように、シリコン基板本体201にガラス基板204の一部が埋め込まれたものであって、図4(e)に示した構成と同じである。よって、第2の実施の形態に係わるガラス埋込シリコン基板を、図2及び図3に示した第1の固定基板2の形成に用いられるガラス基板20に適用することができる。
As shown in FIG. 7E, the glass-embedded silicon substrate manufactured by the above steps is obtained by embedding a part of the glass substrate 204 in the silicon substrate main body 201. As shown in FIG. The configuration is the same as shown. Therefore, the glass embedded silicon substrate according to the second embodiment can be applied to the glass substrate 20 used for forming the first fixed substrate 2 shown in FIGS.
なお、貫通孔203の数は、複数であってもよい。すなわち、第3の工程を実施する時に、凹部202の内部とガラス基板204の外部の間を貫通する貫通孔203が1つ以上形成されていればよい。
The number of through holes 203 may be plural. That is, when the third step is performed, it is only necessary to form one or more through holes 203 that penetrate between the inside of the recess 202 and the outside of the glass substrate 204.
このように、ガラスを凹部202に埋め込む図7の第3の工程を実施する時に、凹部202の内部とガラス基板204の外部の間を貫通する貫通孔203がガラス基板204に形成されている。これにより、ガラスを凹部202に埋め込む際に、凹部202の内部の気体が貫通孔203を通じてガラス基板204の外部へ逃げるので、迅速にガラスを埋め込むことができ、且つボイドを抑制することができる。
Thus, when the third step of FIG. 7 for embedding glass in the recess 202 is performed, the through hole 203 penetrating between the inside of the recess 202 and the outside of the glass substrate 204 is formed in the glass substrate 204. Thereby, when the glass is embedded in the recess 202, the gas inside the recess 202 escapes to the outside of the glass substrate 204 through the through hole 203, so that the glass can be embedded quickly and voids can be suppressed.
以上の実施形態では、前記第2の工程において、第1主面及び第1主面に対向する第2主面が平坦なガラス基板を用いた例により説明したが、本発明はこれに限定されるものではなく、シリコン基板の凹部に対向する位置に肉厚部を有するガラス基板を準備し、凹部に肉厚部を対向させて凹部を密閉するようにしてもよい。
このようにすると、より効果的に凹部にガラスを埋め込むことができる。
この肉厚部は、後述の実施形態に示すように、第1主面又は第2主面に形成された凸部により構成することができるし、第1主面及び第2主面の両主面に凸部を形成することにより構成してもよい。 In the above embodiment, in the second step, the first main surface and the second main surface opposite to the first main surface are described as examples using a flat glass substrate. However, the present invention is not limited to this. Instead of this, a glass substrate having a thick portion at a position facing the concave portion of the silicon substrate may be prepared, and the thick portion may be opposed to the concave portion to seal the concave portion.
If it does in this way, glass can be embedded more effectively in a crevice.
As shown in the embodiments described later, this thick portion can be constituted by a convex portion formed on the first main surface or the second main surface, or both main surfaces of the first main surface and the second main surface. You may comprise by forming a convex part in a surface.
このようにすると、より効果的に凹部にガラスを埋め込むことができる。
この肉厚部は、後述の実施形態に示すように、第1主面又は第2主面に形成された凸部により構成することができるし、第1主面及び第2主面の両主面に凸部を形成することにより構成してもよい。 In the above embodiment, in the second step, the first main surface and the second main surface opposite to the first main surface are described as examples using a flat glass substrate. However, the present invention is not limited to this. Instead of this, a glass substrate having a thick portion at a position facing the concave portion of the silicon substrate may be prepared, and the thick portion may be opposed to the concave portion to seal the concave portion.
If it does in this way, glass can be embedded more effectively in a crevice.
As shown in the embodiments described later, this thick portion can be constituted by a convex portion formed on the first main surface or the second main surface, or both main surfaces of the first main surface and the second main surface. You may comprise by forming a convex part in a surface.
(第3の実施の形態)
図8(c)に示すように、第2の工程を実施する時に、凹部402に入り込む第1の凸部410が、ガラス基板404の第1の主面、すなわちシリコン基板本体401に重なり合う面に形成されていても構わない。これにより、ガラス基板404の一部を凹部402に埋め込む際に、凹部402の内部にガラスが既に存在するため、凹部402にボイドがより発生しにくくなり、より速くガラスを埋め込むことができる。 (Third embodiment)
As shown in FIG. 8C, when the second step is performed, the firstconvex portion 410 that enters the concave portion 402 is formed on the first main surface of the glass substrate 404, that is, the surface overlapping the silicon substrate body 401. It may be formed. Accordingly, when a part of the glass substrate 404 is embedded in the recess 402, glass already exists in the recess 402, so that voids are less likely to be generated in the recess 402, and the glass can be embedded faster.
図8(c)に示すように、第2の工程を実施する時に、凹部402に入り込む第1の凸部410が、ガラス基板404の第1の主面、すなわちシリコン基板本体401に重なり合う面に形成されていても構わない。これにより、ガラス基板404の一部を凹部402に埋め込む際に、凹部402の内部にガラスが既に存在するため、凹部402にボイドがより発生しにくくなり、より速くガラスを埋め込むことができる。 (Third embodiment)
As shown in FIG. 8C, when the second step is performed, the first
図8を参照して、本発明の第3の実施の形態に係わるガラス埋込シリコン基板の製造方法を説明する。
With reference to FIG. 8, the manufacturing method of the glass embedded silicon substrate concerning the 3rd Embodiment of this invention is demonstrated.
(イ)図8(a)及び図8(b)に示す工程は、図4(a)及び図4(b)に示した工程と同じであり、説明を省略する。
(A) The steps shown in FIGS. 8A and 8B are the same as the steps shown in FIGS. 4A and 4B, and a description thereof will be omitted.
(ロ)次に、図8(c)に示すように、シリコン基板本体401の表面にガラス基板404の第1の主面(図8における下面)を重ね合わせる(第2の工程)。なお、ガラス基板404の第1の主面、すなわちシリコン基板本体401に重なり合う面には、予め、ブラスト加工やレーザー加工などにより、第1の凸部410が形成されている。第2の工程において、第1の凸部410は、凹部402の中に入り込む。
(B) Next, as shown in FIG. 8C, the first main surface (the lower surface in FIG. 8) of the glass substrate 404 is overlaid on the surface of the silicon substrate body 401 (second step). In addition, the 1st convex part 410 is formed in the 1st main surface of the glass substrate 404, ie, the surface which overlaps with the silicon substrate main body 401, by blast processing, laser processing, etc. previously. In the second step, the first convex portion 410 enters the concave portion 402.
(ハ)図8(d)に示すように、軟化したガラス基板404の一部(第1の凸部410を含む)をシリコン基板本体401の凹部402に埋め込む(第3の工程)。第3の工程の詳細な手順は、図6を参照して説明したとおりである。
(C) As shown in FIG. 8D, a part of the softened glass substrate 404 (including the first convex portion 410) is embedded in the concave portion 402 of the silicon substrate body 401 (third step). The detailed procedure of the third step is as described with reference to FIG.
(ニ)ガラス基板404を冷却して、再固化させる(第4の工程)。その後に行う図8(e)に示す工程は、図4(e)示した工程と同じであり説明を省略する。
(D) The glass substrate 404 is cooled and re-solidified (fourth step). The subsequent process shown in FIG. 8E is the same as the process shown in FIG.
以上説明したように、第2の工程を実施する時に、凹部402に入り込む第1の凸部410が、ガラス基板404の第1の主面に形成されている。これにより、ガラス基板404の一部を凹部402に埋め込む際に、凹部402の内部にガラスが既に存在するため、凹部402にボイドがより発生しにくくなり、より速くガラスを埋め込むことができる。
As described above, the first convex portion 410 that enters the concave portion 402 is formed on the first main surface of the glass substrate 404 when the second step is performed. Thus, when a part of the glass substrate 404 is embedded in the recess 402, glass already exists in the recess 402, so that voids are less likely to be generated in the recess 402, and the glass can be embedded faster.
(第4の実施の形態)
図9(c)に示すように、第3の工程を実施する時に、第2の凸部510が、ガラス基板504の第2の主面、すなわちシリコン基板本体501に重なり合う面に対向する面に形成されていても構わない。 (Fourth embodiment)
As shown in FIG. 9C, when the third step is performed, the secondconvex portion 510 is formed on the second main surface of the glass substrate 504, that is, the surface facing the surface overlapping the silicon substrate body 501. It may be formed.
図9(c)に示すように、第3の工程を実施する時に、第2の凸部510が、ガラス基板504の第2の主面、すなわちシリコン基板本体501に重なり合う面に対向する面に形成されていても構わない。 (Fourth embodiment)
As shown in FIG. 9C, when the third step is performed, the second
図9を参照して、本発明の第4の実施の形態に係わるガラス埋込シリコン基板の製造方法を説明する。
Referring to FIG. 9, a method for manufacturing a glass-embedded silicon substrate according to the fourth embodiment of the present invention will be described.
(イ)図9(a)及び図9(b)に示す工程は、図4(a)及び図4(b)に示した工程と同じであり、説明を省略する。
(A) The steps shown in FIGS. 9A and 9B are the same as the steps shown in FIGS. 4A and 4B, and the description thereof is omitted.
(ロ)次に、図9(c)に示すように、シリコン基板本体501の表面にガラス基板504の第1の主面(図9における下面)を重ね合わせる(第2の工程)。なお、ガラス基板504の第2の主面、すなわちシリコン基板本体501に重なり合う面に対向する面には、予め、ブラスト加工やレーザー加工などにより、第2の凸部510が形成されている。第2の凸部510は、ガラス基板504の第1の主面の法線方向から見て、凹部502と同じ位置に形成されている。
(B) Next, as shown in FIG. 9C, the first main surface (the lower surface in FIG. 9) of the glass substrate 504 is overlaid on the surface of the silicon substrate body 501 (second step). Note that a second convex portion 510 is formed in advance on the second main surface of the glass substrate 504, that is, the surface facing the surface overlapping the silicon substrate body 501 by blasting or laser processing. The second convex portion 510 is formed at the same position as the concave portion 502 when viewed from the normal direction of the first main surface of the glass substrate 504.
(ハ)図9(d)に示すように、軟化したガラス基板504の一部をシリコン基板本体501の凹部502に埋め込む(第3の工程)。第3の工程の詳細な手順は、図6を参照して説明したとおりである。なお、加熱・加圧治具307がガラス基板504を押す力は、第2の凸部510に集中する為、第2の凸部510の下に位置する凹部502にガラスが押し込まれる。
(C) As shown in FIG. 9D, a part of the softened glass substrate 504 is embedded in the recess 502 of the silicon substrate body 501 (third step). The detailed procedure of the third step is as described with reference to FIG. The force with which the heating / pressurizing jig 307 pushes the glass substrate 504 concentrates on the second convex portion 510, so that the glass is pushed into the concave portion 502 located below the second convex portion 510.
(ニ)ガラス基板504を冷却して、再固化させる(第4の工程)。その後に行う図9(e)に示す工程は、図4(e)示した工程と同じであり説明を省略する。
(D) The glass substrate 504 is cooled and re-solidified (fourth step). The subsequent process shown in FIG. 9E is the same as the process shown in FIG.
以上説明したように、ガラス基板504の一部を凹部502に埋め込む際に、ガラス基板504の第1の主面の法線方向から見て、凹部502と同じ位置に第2の凸部510が存在する。これにより、加熱・加圧治具307がガラス基板504を押す力は、第2の凸部510に集中するため、凹部502にボイドがより発生しにくくなり、より速くガラスを埋め込むことができる。
As described above, when part of the glass substrate 504 is embedded in the concave portion 502, the second convex portion 510 is located at the same position as the concave portion 502 when viewed from the normal direction of the first main surface of the glass substrate 504. Exists. As a result, the force by which the heating / pressurizing jig 307 pushes the glass substrate 504 concentrates on the second convex portion 510, so that voids are less likely to occur in the concave portion 502, and the glass can be embedded faster.
(第5の実施の形態)
図10(b)に示すように、シリコン基板本体601の凹部602の少なくとも一部に、順方向のテーパ形状を設けてもよい。これにより、より効率よくガラスを埋め込むことができる。 (Fifth embodiment)
As shown in FIG. 10B, a forward tapered shape may be provided in at least a part of therecess 602 of the silicon substrate body 601. Thereby, glass can be embedded more efficiently.
図10(b)に示すように、シリコン基板本体601の凹部602の少なくとも一部に、順方向のテーパ形状を設けてもよい。これにより、より効率よくガラスを埋め込むことができる。 (Fifth embodiment)
As shown in FIG. 10B, a forward tapered shape may be provided in at least a part of the
図10を参照して、本発明の第5の実施の形態に係わるガラス埋込シリコン基板の製造方
法を説明する。 With reference to FIG. 10, the manufacturing method of the glass embedded silicon substrate concerning the 5th Embodiment of this invention is demonstrated.
法を説明する。 With reference to FIG. 10, the manufacturing method of the glass embedded silicon substrate concerning the 5th Embodiment of this invention is demonstrated.
(イ)図10(a)に示す工程は、図4(a)に示した工程と同じであり、説明を省略する。図10(b)に示すように、例えば、結晶異方性を有するウェットエッチングによりシリコン基板本体601の表面の所定領域を選択的に除去して、シリコン基板本体601の表面に凹部602を形成する(第1の工程)。シリコン基板本体601の凹部602は順方向のテーパ形状を備える。すなわち、シリコン基板本体601の主面に平行な凹部602の断面積は、凹部602の底面からシリコン基板本体601の主面に向かって大きくなっている。
(A) The process shown in FIG. 10A is the same as the process shown in FIG. As shown in FIG. 10B, for example, a predetermined region on the surface of the silicon substrate body 601 is selectively removed by wet etching having crystal anisotropy to form a recess 602 on the surface of the silicon substrate body 601. (First step). The recess 602 of the silicon substrate body 601 has a forward tapered shape. That is, the cross-sectional area of the recess 602 parallel to the main surface of the silicon substrate body 601 increases from the bottom surface of the recess 602 toward the main surface of the silicon substrate body 601.
(ロ)その後、RIEなどの異方性エッチングにより凹部602の底面の所定領域を選択的に除去して、凹部602の底面とシリコン基板本体601の裏面との間を貫通する2以上の貫通孔603を形成する。
(B) Thereafter, two or more through holes penetrating between the bottom surface of the concave portion 602 and the back surface of the silicon substrate body 601 are selectively removed by anisotropic etching such as RIE. 603 is formed.
(ハ)その後に行う図10(c)~図10(e)に示す工程は、図4(c)~図4(e)に示した工程と同じであり説明を省略する。
(C) The subsequent steps shown in FIGS. 10 (c) to 10 (e) are the same as the steps shown in FIGS. 4 (c) to 4 (e), and a description thereof will be omitted.
以上説明したように、凹部602に順方向のテーパ形状を設けることができるので、より効率よくガラスを埋め込むことができる。よって、凹部602にボイドがより発生しにくくなり、より速くガラスを埋め込むことができる。
As described above, the concave portion 602 can be provided with a forward tapered shape, so that glass can be embedded more efficiently. Therefore, voids are less likely to be generated in the recess 602, and the glass can be embedded faster.
なお、凹部602に設ける順方向のテーパ形状は、凹部602の少なくとも一部に形成されていればよい。少なくとも一部に形成されていれば、ボイド抑制及び高い処理速度という効果が得られる。
It should be noted that the forward tapered shape provided in the recess 602 only needs to be formed in at least a part of the recess 602. If it is formed at least partially, the effects of void suppression and high processing speed can be obtained.
(その他の実施の形態)
上記のように、本発明は、5つの実施の形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。 (Other embodiments)
As described above, the present invention has been described according to the five embodiments. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples, and operational techniques will be apparent to those skilled in the art.
上記のように、本発明は、5つの実施の形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。 (Other embodiments)
As described above, the present invention has been described according to the five embodiments. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples, and operational techniques will be apparent to those skilled in the art.
例えば、貫通孔53、203、403、503、603は、シリコン基板本体やガラス基板の主面の法線に沿って貫通する孔である場合を示した。しかし、本発明はこれに限定されない。貫通孔は、凹部の内部の気体を外部へ逃がすために、凹部の内部と外部の間を貫通すればよい。例えば、貫通孔は、凹部の内部とシリコン基板本体やガラス基板の主面との間を斜めに貫通していてもよい。或いは、凹部の内部とシリコン基板本体やガラス基の側面との間を貫通していてもよい。
For example, the case where the through holes 53, 203, 403, 503, and 603 are holes penetrating along the normal line of the main surface of the silicon substrate body or the glass substrate is shown. However, the present invention is not limited to this. The through hole only has to penetrate between the inside and the outside of the recess in order to let the gas inside the recess escape to the outside. For example, the through hole may penetrate diagonally between the inside of the recess and the main surface of the silicon substrate body or the glass substrate. Or you may penetrate between the inside of a recessed part, and the side surface of a silicon substrate main body or a glass base.
また、シリコン基板本体の主面に凹部を形成する工程では、単結晶シリコンから成るシリコン基板本体の一部を加工して、単結晶シリコンから成る凹部を形成していた。しかし、これに限定されることない。例えば、シリコン基板本体の主面に凹部を形成する工程は、単結晶シリコンから成るシリコン基板本体の主面に、多結晶シリコンから成るシリコン膜を堆積し、シリコン膜の一部を除去して凹部を形成してもよい。
Also, in the step of forming the recess on the main surface of the silicon substrate body, a part of the silicon substrate body made of single crystal silicon is processed to form the recess made of single crystal silicon. However, it is not limited to this. For example, the step of forming a recess in the main surface of the silicon substrate body is performed by depositing a silicon film made of polycrystalline silicon on the main surface of the silicon substrate body made of single crystal silicon, and removing a portion of the silicon film to form the recess May be formed.
更に、プロセスマージンとして、図6のS07段階の処理は、凹部52の中が軟化したガラス基板54によって充填されてから、貫通孔53の中が軟化したガラス基板54によって充填されて、軟化したガラスがステージ306に到達する前に、停止すればよい。
Furthermore, as a process margin, the processing in step S07 in FIG. 6 is performed by filling the inside of the recess 52 with the softened glass substrate 54 and then filling the through hole 53 with the softened glass substrate 54 to soften the glass. Can be stopped before reaching stage 306.
このように、本発明はここでは記載していない様々な実施の形態等を包含するということを理解すべきである。したがって、本発明はこの開示から妥当な特許請求の範囲に係る発明特定事項によってのみ限定されるものである。
Thus, it should be understood that the present invention includes various embodiments not described herein. Therefore, the present invention is limited only by the invention specifying matters according to the scope of claims reasonable from this disclosure.
Claims (8)
- シリコン基板本体の主面に凹部を形成する第1の工程と、
シリコン基板本体の主面にガラス基板の第1の主面を重ね合わせる第2の工程と、
前記ガラス基板に熱を加えて軟化させて、当該ガラス基板の一部を前記シリコン基板本体の凹部に埋め込む第3の工程と、
前記ガラス基板を冷却する第4の工程と、
前記ガラス基板のうち、前記シリコン基板本体の凹部に埋め込まれた部分を残し、他の部分を除去する第5の工程と、を備え、
前記第3の工程を実施する時に、前記凹部の内部と外部の間を貫通する貫通孔が形成されている
ことを特徴とするガラス埋込シリコン基板の製造方法。 A first step of forming a recess in the main surface of the silicon substrate body;
A second step of superimposing the first main surface of the glass substrate on the main surface of the silicon substrate body;
A third step of softening the glass substrate by applying heat to embed a part of the glass substrate in a recess of the silicon substrate body;
A fourth step of cooling the glass substrate;
A fifth step of leaving the portion embedded in the concave portion of the silicon substrate body, and removing the other portion of the glass substrate, and
When the third step is carried out, a through-hole penetrating between the inside and the outside of the recess is formed. A method for manufacturing a glass-embedded silicon substrate, wherein: - 前記貫通孔は前記シリコン基板本体に形成されていることを特徴とする請求項1に記載のガラス埋込シリコン基板の製造方法。 The method for manufacturing a glass-embedded silicon substrate according to claim 1, wherein the through-hole is formed in the silicon substrate body.
- 前記貫通孔は前記ガラス基板に形成されていることを特徴とする請求項1に記載のガラス埋込シリコン基板の製造方法。 The method for manufacturing a glass-embedded silicon substrate according to claim 1, wherein the through hole is formed in the glass substrate.
- 前記第3の工程において、前記孔を通じて、前記凹部の内部の気圧を前記ガラス基板の外部の気圧よりも低くすることを特徴とする請求項1~3のいずれか一項に記載のガラス埋込シリコン基板の製造方法。 The glass embedding according to any one of claims 1 to 3, wherein, in the third step, the air pressure inside the recess is made lower than the air pressure outside the glass substrate through the hole. A method for manufacturing a silicon substrate.
- 前記第2の工程において、前記凹部に対向する位置に肉厚部を有するガラス基板を準備し、前記凹部に前記肉厚部を対向させて前記凹部を密閉する請求項1~4のいずれか一項に記載のガラス埋込シリコン基板の製造方法。 5. The glass substrate having a thick portion at a position facing the concave portion in the second step, and sealing the concave portion with the thick portion facing the concave portion. A method for producing a glass-embedded silicon substrate according to Item.
- 前記肉厚部は、前記凹部に入り込む第1の凸部が、前記ガラス基板の第1の主面に形成されてなることを特徴とする請求項5に記載のガラス埋込シリコン基板の製造方法。 6. The method for manufacturing a glass-embedded silicon substrate according to claim 5, wherein the thick part is formed with a first convex part entering the concave part on the first main surface of the glass substrate. .
- 前記肉厚部は、第2の凸部が前記ガラス基板の第2の主面に形成されてなることを特徴とする請求項5に記載のガラス埋込シリコン基板の製造方法。 6. The method for manufacturing a glass-embedded silicon substrate according to claim 5, wherein the thick portion is formed by forming a second convex portion on the second main surface of the glass substrate.
- シリコン基板本体の主面に平行な前記凹部の断面積の少なくとも一部は、当該凹部の底面から当該シリコン基板本体の主面に向かって大きくなっていることを特徴とする請求項1~7のいずれか一項に記載のガラス埋込シリコン基板の製造方法。 The at least part of the cross-sectional area of the recess parallel to the main surface of the silicon substrate main body is increased from the bottom surface of the recess toward the main surface of the silicon substrate main body. The manufacturing method of the glass embedded silicon substrate as described in any one of Claims.
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JP2001144398A (en) * | 1999-11-16 | 2001-05-25 | Dainippon Printing Co Ltd | Wiring board and manufacturing method of the wiring board |
JP2006047279A (en) * | 2004-07-02 | 2006-02-16 | Alps Electric Co Ltd | Glass substrate, and capacitance-type pressure sensor using the same |
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JP2006047279A (en) * | 2004-07-02 | 2006-02-16 | Alps Electric Co Ltd | Glass substrate, and capacitance-type pressure sensor using the same |
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CN114388366A (en) * | 2022-03-22 | 2022-04-22 | 湖北江城芯片中试服务有限公司 | Preparation method of packaging shell and preparation method of packaging chip |
CN114388366B (en) * | 2022-03-22 | 2022-05-31 | 湖北江城芯片中试服务有限公司 | Preparation method of packaging shell and preparation method of packaging chip |
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