201216134 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種觸控面板之結構及其製造方法，更 特別的是關於觸控面板中’用來降低ITO透明導電層形成 之電控線路阻抗的一種低阻抗電控線路結構及其製造方 法。 【先前技術】 • 隨著觸控技術的演進’觸控式人機介面，如：觸控面 板(Touch Panel)’已被廣泛地應用至各式各樣之電子產品 中，用於取代傳統之輸入裝置（如：鍵盤及滑鼠等），方便 使用者操控以及瀏覽資料。 觸控面板(Touch Panel)—般可分為軟式及硬式面板，一 種硬式面板係利用玻璃基板與形成於其上之透明導電層組 成下部的透明導電板，上部的透明導電板則為透明導電薄 φ 膜，用來控制操作動作的電控線路分別位於上下部透明導 電板的四周，再藉由排線及控制1〇供使用者以觸控方式進 行操作。觸控面板依動作方式不同可分為：電阻式、電容 式、音波式、光導波式、荷重變化式等。軟式面板則可利 用可透光PET塑膠基板、透日轉電層及透明導電薄膜來分 別組成上下部的透明導電板。 傳統上’紐過對基材上之透明導電層的曝光/顯影/ 餘刻製程，形成位於紐四周的電控線路，心，此等電 控線路產生的表面電阻值大約在1〇()n/cm2至 3 201216134 間，為了進一步降低此高阻抗值，通常會再利用例如. 膠印刷法、鉬/鋁/鉬濺鍍法、及銅電鍍/濺鍍法等增層择銀 方法於透明導電層形成之電控線路上更加形成厚 低電控線路阻抗的低阻抗電控線路層，然而習知的此*降 作方式製程複雜且所需設備繁多造成成本提高，此外等製 等製作方式有線寬間距上的製作極限，日亦微縮 = 寬造成製作上困難度的提升以及良率的降低，此乃因、、、 製作方式之下，線路容易發生阻抗不均、斷線 此等 近線路發生短路等的情況。 "疋與鄰 【發明内容】 本發明之-目的在於提出一種觸控面板之 線路製造方法，以及提供-種低阻抗電控線路之=電控 結構可提高觸控面板辨識力的精確度 ，此 製作要求。 …達到精細的線路 本發明之另-目的在於使用前述低阻抗電控 構，其製作方式得以簡易且精確化。 、’、之結 為達上述目的及其他目的’本發明之觸 抗電控線路製造方法t，該觸控㈣=且 含一基材及形成於該基材上之氧化_電控線路，ί = 包含：可視區覆蓋步驟，係以保護膜覆蓋部分該基材以露 出該氧化銦錫電控線路；前處理步驟，係於該氧化姻錫電 控線路上形成把觸媒；化學無電解鎳電鑛步驟，係使錄金 屬層沉積於該氧化銦錫電控線路上；熱退火步驟，·化學異] 4 201216134 =金電鍍步驟，係使金層沉積於該錦金屬層上；及去膜步 驟’移除該保護膜。 :各種實施例之下，於化學無電解鎳電鐘步驟中，可 =氣化銦錫電控線路上沉積至少0.4微米的鎳金屬層， 斜㈣透料電板於咐至抓之溫度下浸泡 至1G分鐘；於熱退火步驟中，可於咖〇 牛驟中U下實施至少5G分鐘；可於化學置換金電鍍 =中，於該鎳金屬層上_G._至㈣5微米的金層， 於酸性=?==步=，可將該透明導電板浸泡 電控有!平方公分3歐姆== 驟：清洗::之二處理步驟的實施例中’更可包含以下步 邓/月洗步驟、調質步驟、觸姐半咖^ / 該清洗步驟可進行4至6分/:驟、速化步驟；其中， 分鐘，該觸媒步驟可進H _ s步驟可進行5至10 至5分鐘。 分鐘，該速化步驟可進行2 於本發明之低阻抗電 含：該低阻抗電控線 二的實施例中’其結構包 錫電控線路層、至少〇4/ = 土材向上依序包含有一氧化銦 微米的一金層；其中'米的鎳金屬層及0.010至0025 而該匈之厚度以層之厚度可為W微米， 藉由在光學破嶂咬 之氧化銦錫電控線路2 “予膜上覆蓋保護膜以使未於周邊 而可使其表面電阻值=依:形，全屬層、金層，進 芏約3Q/cm，使觸控訊號不易楫】 5 201216134 用此t和Of ’進而增加觸控面板的整體穩定度，且採 化，其表面也不易產生氧化來影響==精細 合的貼合面，再者，此等結構的;=步驟中進行組 製作成本。 寻稱㈣作方式更可減低整體的 【實施方式】 具體=Γί發明之目的、特徵及功致，兹藉由下述 明，說明如後：、配合所附之圖式’對本發明做一詳細說 本發明於原有電控線路上附 於銀膠印刷法、 的低阻抗線路層係有別 阻抗線路層。習知於基材上非可電鍵濺錄法等形成之低 製程係將透明道Φ刹Α °°進订之曝光/顯影/餘刻 =係:透明導電層製作成氧化銦錫電控線發 !進：步進行用以降低電控線路表面電阻值的後續方心、 ’而使該氧化銦錫電控線路形成—種低阻抗電控線 路’並可將原有之1G嶋m^5_/e 至約 3Q/cm2。 ^ 首先睛參閱第1圖，係—私雜4^ T , 的電控線路示意圖。第《圖所之透明導電板上 .^ 圆所不之透明導電板係為觸控面 板中上下兩部透明導電板中的其中-部，另-部之透明導 電板除了基材可能不同外，於基材上皆形成有氧化銦錫之 透明導電層，本發明僅示例其中一部透明導電板之製作德】 201216134 形，另一部之製作情形係相同。第1圖中，觸控面板内具 有一透明導電板100,其上包含了可視區A與不可視區B， 電控線路101係成形於不可視區B内，並透過訊號排線1〇3 將觸控動作所產生的電壓訊號傳遞出去。透明導電板1〇〇 包含一基材及披覆於該基材之一透明導電層，基材可為硬 式的玻璃基板或軟式的可撓性基板或其他性質的基材，而 基材與透明導電層係重疊在一起，於圖式中的可視區八加 上不可視區B係其疊合在一起後之結構。 本發明係以習知的線路製作技術先完成基材上氧化銦 錫電控線路的製作，之後，再進行本發明之低阻抗電控線 路的製造方法。 接著請參閱第2圖，係本發明一實施例中低阻抗電控 線路的製造方法流程圖。圖式中包含七個步驟，其中步驟 S10〜S40即為氧化銦錫電控線路製作步驟中的一種示例。 例如·步驟sio為正負片流程，再經步驟S2〇的印刷塗佈 以將所需的電控線路走線預先佈局於透明導電層上，之後 步驟S30會進仃全面曝光，最後的步驟§4〇之顯影/姓刻/ 去膜即會完成全部的氧化銦錫電控線路製作。 完成則述之步驟後，再經以下由本發明提出之步驟方 法後即能進-步地降低電控線路之表面電阻。其中，前述 之步驟僅為-種示例’任何其他可完成氧化_電控線路 製作皆可適用本發明。 接著丨%進行步驟S5。之可視區覆蓋步驟，其係用於將 可視區覆蓋保5蔓膜並露出不可視區中的氧化銦錫電控乾] 201216134 路’以供㈣化學無電_金製錄魏化_電控線路 上加厚導線，達到降低表面電阻值之功效。 接著進行步驟S6G之前處理步驟，以利㈣金屬材料 作為化學鎳反應之觸媒。 接著進行步驟S70之化學無電解鎳電鍍步驟 (dectroless nickel plating)，其係為一無電解鎳置換步驟， 浸泡該透明導電板，使錄金制沉積於該氧化銦錫電控線201216134 VI. Description of the Invention: [Technical Field] The present invention relates to a structure of a touch panel and a method of fabricating the same, and more particularly to an electronic control circuit for reducing the formation of a transparent conductive layer of ITO in a touch panel A low impedance electronic control circuit structure for impedance and a method of fabricating the same. [Prior Art] • With the evolution of touch technology, the touch-sensitive human-machine interface, such as the touch panel, has been widely used in a wide variety of electronic products to replace the traditional Input devices (such as keyboards and mice) are convenient for users to manipulate and browse data. The touch panel can be divided into a soft and a hard panel. A hard panel is a transparent conductive plate composed of a glass substrate and a transparent conductive layer formed thereon, and the upper transparent conductive plate is transparent and thin. The φ film, the electronic control circuit for controlling the operation is respectively located around the upper and lower transparent conductive plates, and is then operated by the user through the cable and the control. Touch panels can be divided into resistive, capacitive, acoustic, optical guided, and load-variant types depending on the mode of operation. The flexible panel can be used to separate the upper and lower transparent conductive plates by using a light transmissive PET plastic substrate, a through-transit layer and a transparent conductive film. Traditionally, the exposure/development/envelope process of the transparent conductive layer on the substrate is formed to form an electronic control line around the button. The surface resistance of the electronic control circuit is about 1〇()n. Between /cm2 and 3 201216134, in order to further reduce this high-impedance value, it is usually used for transparent conductive methods such as offset printing, molybdenum/aluminum/molybdenum sputtering, and copper plating/sputtering. On the electronic control circuit formed by the layer, a low-impedance electronic control circuit layer with thick and low electronically controlled line impedance is formed. However, the conventional method of reducing the operation mode is complicated and requires a large number of devices to increase the cost, and the production method is wired. The production limit on a wide pitch, the daily shrinkage = width causes difficulty in production and the yield is reduced. This is due to the fact that under the manufacturing method, the line is prone to impedance unevenness and disconnection. Short circuit, etc. The present invention is directed to a circuit manufacturing method for a touch panel, and a low-impedance electronic control circuit=electronic control structure can improve the accuracy of the touch panel identification force. This production requirement. ...to achieve a fine line Another object of the present invention is to use the aforementioned low-impedance electrical control in a manner that is simple and precise. The combination of the touch-resistance control circuit of the present invention, the touch (4) = and comprising a substrate and an oxidation-electrical control circuit formed on the substrate, = Included: a visible area covering step of covering a portion of the substrate with a protective film to expose the indium tin oxide electronic control circuit; a pre-treatment step of forming a catalyst on the oxidized samarium electronic control line; chemical electroless nickel The electro-minening step is to deposit a recorded metal layer on the indium tin oxide electronic control line; thermal annealing step, chemical difference] 4 201216134 = gold plating step, depositing a gold layer on the metal layer; and removing the film Step 'Remove the protective film. : Under various embodiments, in the step of chemical electroless nickel electric clock, at least 0.4 micron nickel metal layer may be deposited on the vaporized indium tin electronic control circuit, and the oblique (four) dielectric plate is immersed at the temperature of the smashing to the grasping temperature. Up to 1G minutes; in the thermal annealing step, at least 5G minutes can be carried out in the calf calf step; in the chemical replacement gold plating = _G._ to (four) 5 micron gold layer on the nickel metal layer, In the acid=?== step=, the transparent conductive plate can be immersed electronically controlled! Square centimeter 3 ohms == Step: Cleaning:: The second embodiment of the processing step can further include the following steps: Deng/month washing step , the tempering step, the contact half-coffee ^ / the cleaning step can be carried out 4 to 6 minutes /: step, speeding step; wherein, in minutes, the catalyst step can be H _ s step can be carried out for 5 to 10 to 5 minutes . Minutes, the speeding step can be performed in the low-impedance electrical inclusion of the present invention: in the embodiment of the low-impedance electronic control line 2, the structure of the tin-clad electrical control circuit layer, at least 〇4/ = soil material is sequentially included a gold layer of indium micron; wherein the 'metery nickel metal layer and 0.010 to 0025 and the thickness of the Hungarian layer can be W microns, with an indium tin oxide electronic control line 2 in the optical break bite" The film is covered with a protective film so that the surface resistance value is not in the periphery, and the entire surface layer and the gold layer are about 3Q/cm, so that the touch signal is not easy to be used. 5 201216134 With this t and Of 'further increase the overall stability of the touch panel, and the surface of the touch panel is not easy to produce oxidation to affect the == fine fit surface, and, in addition, the cost of the group production in the step; It is said that the method of (4) can reduce the overall [implementation]. The specific purpose, characteristics and merits of the invention are explained by the following: The invention is attached to the low-impedance of the silver offset printing method on the original electronic control circuit The road layer has a different impedance circuit layer. It is known that the low-process system formed by non-electro-switchable sputtering method on the substrate will be transparent channel Φ brake Α °° exposure exposure / development / residual = system: transparent conductive layer Made into indium tin oxide electronic control line! In: step to reduce the surface of the electronic control circuit surface resistance, 'and make the indium tin oxide electronic control line form a low-impedance electronic control line' and The original 1G嶋m^5_/e to about 3Q/cm2. ^ First look at the first picture, the system-private 4^T, the electronic control circuit diagram. The "transparent conductive plate on the map. ^ circle The transparent conductive plate is not the middle part of the upper and lower transparent conductive plates in the touch panel, and the transparent conductive plate of the other part is formed with transparent indium tin oxide on the substrate except that the substrate may be different. Conductive layer, the present invention only exemplifies the production of one transparent conductive plate] 201216134 shape, the other part is the same. In the first figure, the touch panel has a transparent conductive plate 100, which contains visible Zone A and invisible zone B, the electronic control circuit 101 is formed in the invisible zone B and passes through the signal row The line 1〇3 transmits the voltage signal generated by the touch action. The transparent conductive plate 1〇〇 comprises a substrate and a transparent conductive layer coated on the substrate, and the substrate can be a hard glass substrate or a soft type. a flexible substrate or a substrate of other nature, and the substrate and the transparent conductive layer are overlapped, and the visible area in the figure is added to the invisible area B, and the structure is laminated. The conventional circuit fabrication technique first completes the fabrication of an indium tin oxide electronic control circuit on a substrate, and then performs the method of manufacturing the low impedance electronic control circuit of the present invention. Next, referring to FIG. 2, in an embodiment of the present invention, Flow chart of manufacturing method of low-impedance electronic control circuit. The figure includes seven steps, wherein steps S10-S40 are an example of the steps of manufacturing an indium tin oxide electronic control circuit. For example, the step sio is a positive and negative film process, and then the printing and coating of the step S2 is performed to pre-lay the required electronic control circuit traces on the transparent conductive layer, and then the step S30 is subjected to full exposure, and the final step is § 4. The development of the enamel / surname / remove the film will complete the production of all indium tin oxide electronic control circuit. After the completion of the steps described, the surface resistance of the electronic control line can be further reduced by the following step method proposed by the present invention. Wherein, the foregoing steps are merely examples - any other achievable oxidation - electronic control circuit fabrication can be applied to the present invention. Then 丨% proceeds to step S5. The visible area covering step is used to cover the visible area to cover the 5 vine film and expose the indium tin oxide in the invisible area to be electrically controlled] 201216134 road 'for (4) chemical powerless _ gold recording Weihua _ electronic control line Thicken the wire to reduce the surface resistance. Next, the processing step before step S6G is performed to facilitate the (iv) metal material as a catalyst for the chemical nickel reaction. Next, a dectroless nickel plating step of step S70 is performed, which is an electroless nickel replacement step, immersing the transparent conductive plate to deposit a gold deposit on the indium tin oxide electronic control line.
路上。於實施财，係於該氧化銦錫電控線路上沉積至少 0.4微米的鎳金屬層，較佳係沉積〇 5微米。 接著進行步驟S8G之熱退火步驟，其可使鎳堆疊層更 緊密地附著於該氧化銦錫電控線路上，其可降低阻抗。於 -較佳實施例中’係於12代至14(rc之溫度下實施至少 50〜65分鐘（例如：可為50至65間之整數值），最佳係在 130°C下實施。 接者進行步驟 于且状I电殿3F鄉(immersionOn the road. For implementation, a nickel metal layer of at least 0.4 μm is deposited on the indium tin oxide electronic control line, preferably 〇 5 μm. A thermal annealing step of step S8G is then performed which allows the nickel stack to adhere more closely to the indium tin oxide electronic control line, which reduces impedance. In the preferred embodiment, it is carried out at temperatures of 12 to 14 (at a temperature of rc for at least 50 to 65 minutes (for example, may be an integer value between 50 and 65), and the optimum is carried out at 130 ° C. Steps on the shape and the electric I 3F township (immersion
Au plating)，其係為一浸泡金罟故 兔罝換步驟，浸泡該透明導電 板，以使金層沉積於該鎳金屬層 / 却’上。於一實施例中，係於 該鎳金屬層上沉積至少0.01撒伞 微朱的金層，較佳係為0 010 至0_025微米’例如可為〇 〇15微米。 最後進行步驟S100之去臌也_ 心无犋步驟，用於除去步驟S5〇中 覆蓋於可視區上之保護膜，以你，λ 路出全部的電控線路圖形。 於步驟S100之後會進行觸控面… ^ 子二面板的後製程，其係為習知技 術，於此即不再贅述。 其中，步驟S50可利用不内 用不冋之方法於可視區上形成濟] 8 201216134 保護膜，例如第3圖之所示，係三種不同實施例之完成步 驟S50之覆蓋步驟的流程圖。A方法為經過步驟S511之可 剝膠印刷，以將一可剝式的膠材料印刷於可視區上，再經 步驟S512之烘烤固化，以將膠材料固化成該保護膜。B方 法為經過步驟S521之光阻印刷，以將光阻材料印刷於可視 區上，再經步驟S522之UV固化，以將光阻材料固化成該 保護膜。C方法則為經過步驟S531之光阻壓膜或光阻塗 佈’以將光阻材料形成於可視區與不可視區上，再經步驟 S532之曝光，以使可視區上之光阻材料曝光成形為該保護 膜’最後經過步驟S533之顯影’以剝離不可視區上之光阻 材料，以顯露出不可視區中的氧化銦錫電控線路。前述之 三種方法僅為一種示例’任合其他可於可視區上形成保護 膜之其他等效方法皆不離開本發明之範鳴。 至於前述之步驟S60則可參閱第4圖，係本發明一實 施例中鈀活化步驟的方法流程圖。其包含以下所述之 S601〜S604的步驟： 首先進行清洗(cleaning)步驟S601，係為一脫脂步驟， 可利用酸性或鹼性的清潔液來進行透明導電板的清潔。 接著進行調質（conditioning)步驟S602，其係用於調整 透明導電層，使其易於附著後續之鈀金屬材料。 接著進行觸媒(activating)步驟S603，浸泡該透明導電 板’使鈀金屬材料可附著於該氧化銦錫電控線路上以及非 可視區的該基材上。 接著進行速化(post-activating)步驟S604，保留該氧^ 201216134 銦錫電控線路上之鈀金屬材料，去除其餘部分之鈀金屬材 料，此步驟係以化學劑進行離子化處理。 經過前述之S10〜S100步驟後，原有之氧化銦錫電控線 路表面上即會依序形成鎳金屬層、金層，進而可使表面電 阻值降至約3 Ω/cm2 ’使觸控訊號不易損失、變形和失真， 進而增加觸控面板的整體穩定度。 步驟 處理藥劑 處理條件 清洗S601 Melplate PC-6122 45〇C，4〜6min 調質S602 Melplate 480A Melplate 480B 25°C，5〜lOmin 觸媒S603 KOH Melplate 7331 25〇C，2〜5min 速化S604 Melplate 7340 25°C J 2~5min 無電解鎳S70 Melplate NI-867M1 Melplate NI-867M2 60〜70°C,pH 約 4.6,5〜lOmin 目標：0.5微米 熱退火S80 無 120〜140°C，至少 50min 置換金S90 氰金化鉀 Melplate AU-6601MA Melplate AU-6601MB 70〜80°C，pH 約 5.0, l~5min 目標：0.01至0.02微米 表一 以下將舉例實施上述方法的實施範例來做示例： 首先以表一來做整合性的說明: 於清洗步驟S601中’可採用酸性清潔液，例如：利用 MelplatePC-6122的硫酸溶液100(毫升/升）清洗該透明導 電板4至6分鐘（例如：可為1至2間之整數值），該硫酸 溶液包含：重量百分比為13%的硫酸(sulfuric acid)、重量 201216134 百分比為10%〜20°/。的安定劑及重量百分比為70%〜80%的 水。 於調質步驟S602中，可同時採用例如：Melplate 480A 的溶液20 (克/升）與Melplate 480B的溶液200 (毫升/升） 一同浸泡該透明導電板5至10分鐘（例如：可為5至10 間之整數值）。其中，該480A溶液包含：重量百分比為 20%〜30%的硫酸氫卸(potassium hydrogen)、重量百分比為 2% 的過硫酸曱（di-potassium peroxodisulfate)、重量百分比 為 70%〜80%的無機酸鹽（inorganic acid, salt);該 480B 溶液 則包含：重量百分比約為1.3%的氟化氫錢（ammonium hydrogen fluoride)、重量百分比為40%〜50%的有機酸 (Organic acid)、重量百分比為50%〜60%的水。 於觸媒步驟S603中，可同時採用例如：當量莫耳濃度 約為0.1N的氳氧化鉀溶液1.5 (毫升/升），以及Melplate 7331的溶液30 (毫升/升）一同浸泡該透明導電板2至5 分鐘（例如：可為2至5間之整數值）。其中，該7331溶 液包含：重量百分比約為1%或更小的氯化鈀(palladium dichloride)、重量百分比為1%〜1〇%的安定劑、重量百分比 約為90%或更小的水。 於速化步驟S604中，可採用例如：Melplate 7340的溶 液(毫升/升）浸泡該透明導電板2至5分鐘（例如：可 為2至5間之整數值）。其中，該7340溶液包含：重量百 分比為45%至55%的鱗酸(phosphinic acid)、重量百分比為 45%至55%的水。 r 201216134 於化學無電解鎳電鍍步驟S70中，可同時採用例如： Melplate NI-867M1 的溶液 60 (毫升/升）與 Melplate NI-867M2的溶液120 (毫升/升）於60°C至70°C之溫度下 (例如：可為60°C至70°C間之整數溫度值）一同浸泡該透 明導電板5至10分鐘（例如：可為5至10間之整數值）。 其中，該NI-867M1溶液包含：重量百分比約為20%的硫 酸鎳(Nickel Sulfate)、重量百分比約為1%或更小的安定 劑、重量百分比為70%〜80%的水；該NI-867M2溶液則包 含：重量百分比約為0.1 %或更小的確酸錯（lead nitrate)、重 量百分比為10%〜20%的次亞磷酸鹽（hypophosphoric acid, salt)、重量百分比約為10%至20%的安定劑、重量百分比 為60%〜70%的水。 於化學置換金電鏟步驟S90中，可同時採用例如：氰 金化鉀（Potassium gold cyanide)2.9 (克 /升）、Melplate AU-6601MA號溶液100 (毫升/升）與AU-6601MB號溶液 100 (毫升/升）一同浸泡該透明導電板1至5分鐘（例如： 可為1至5間之整數值）。其中，該AU-6601MA號溶液包 含：重量百分比約為10%〜20%的穩定劑、重量百分比為 80%〜90%的水；該AU-6601MB號溶液則包含：重量百分 比約為30%〜40%的穩定劑、重量百分比為60%〜70%的水。 據此，本發明提供之低阻抗電控線路結構，其可於該 基材1001 (請參閱第5圖）向上依序具有氧化銦錫電控線 路層101、至少0.4微米的鎳金屬層105、及0.010至0.025 微米（例如可為 0.01卜 0.012、0.013、0.014、0.015、0.016m 12 201216134 微米）的金層107,上述結構可由第5圖之根據第j圖^, 線段下的剖面圖來視得’其中該透明導電板1〇〇包含基材 轉電層⑽2，而該等三個氧化賴電控線路層 〇1係藉由蝕刻原透明導電層1〇〇2而得。 而採：本案利用特殊鍍層的低阻抗電控線路結構 ㈣路的製造枝，此線路的線寬 技術可更加地精細化，且亦可有效地降低 面板_的準:::::==^該觸控 術者2:亡文中已以較佳實施例揭露’然熟習本項技 讀為限制本發;之僅，本發明，而不應解 效之變化㈣4的是，舉凡與該實施例等 本發明之佯对設為涵蓋於本發明之範如。因此， 保杨B當以申請專利範圍所界定者為準。 【圖式簡單說明】 不 圖 意圖第1圖為-般觸控面板之透明導電板上的電控線路示 法流^圖為本發明—實施例中低阻抗電控線路的製造方 同實成第2圖中步驟S5。之覆蓋步驟的 第4圖為本發明—實施例中化學無電解製程的製 造方[ S] 13 201216134 法流程圖。 第5圖為根據第1圖之Ι-Γ線段下的剖面圖。 【主要元件符號說明】 100 透明導電板 1001 基材 1002 透明導電層 101 氧化銦錫電控線路 '· 103 訊號排線 * 105 鎳金屬層 107 金層 A 可視區 B 不可視區 Ι-Γ 線段 S10-S100 • 步驟 [S] 14Au plating) is a soaking process in which the transparent conductive plate is immersed so that a gold layer is deposited on the nickel metal layer / but. In one embodiment, a gold layer of at least 0.01 smear is deposited on the nickel metal layer, preferably from 0 010 to 0 025 μm, for example, 〇 15 μm. Finally, the step S100 is performed to remove the protective film covering the visible area in step S5, and all the electronic control circuit patterns are taken out by you. After step S100, the touch surface will be performed. ^ The post-process of the sub-panel is a conventional technique, and will not be described again. Wherein, step S50 can form a protective film on the visible area by means of a non-invasive method, for example, as shown in FIG. 3, which is a flow chart of the step of covering step S50 of three different embodiments. The method A is a peelable adhesive printing in step S511 to print a peelable adhesive material on the visible area, and then baked and solidified in step S512 to cure the adhesive material into the protective film. The B method is the photoresist printing in step S521 to print the photoresist material on the visible region, and then UV curing in step S522 to cure the photoresist material into the protective film. The C method is the photo-resist film or photoresist coating of step S531 to form the photoresist material on the visible area and the invisible area, and then exposed by the step S532 to expose the photoresist material on the visible area. The protective film is finally "developed through step S533" to strip the photoresist material on the invisible region to reveal an indium tin oxide electronic control line in the invisible region. The foregoing three methods are merely examples of any other equivalent method that can form a protective film on the visible region without departing from the scope of the present invention. As for the aforementioned step S60, reference is made to Fig. 4, which is a flow chart of the method of the palladium activation step in an embodiment of the present invention. It comprises the steps S601 to S604 described below: First, a cleaning step S601 is performed as a degreasing step, and the cleaning of the transparent conductive plate can be performed using an acidic or alkaline cleaning liquid. Next, a conditioning step S602 is performed for adjusting the transparent conductive layer to facilitate adhesion to the subsequent palladium metal material. Next, activating step S603 is performed, and the transparent conductive plate is immersed so that the palladium metal material can be attached to the indium tin oxide electronic control line and the substrate in the non-visible area. Next, a post-activating step S604 is performed to retain the palladium metal material on the oxygen 201216134 indium tin electronic control line to remove the remaining portion of the palladium metal material. This step is ionized by a chemical agent. After the above steps S10~S100, the original indium tin oxide electronic control circuit will form a nickel metal layer and a gold layer on the surface, thereby reducing the surface resistance value to about 3 Ω/cm2 'to make the touch signal It is not easy to lose, deform and distort, which in turn increases the overall stability of the touch panel. Step Treatment Chemical Treatment Conditions S601 Melplate PC-6122 45〇C, 4~6min Quenched and tempered S602 Melplate 480A Melplate 480B 25°C, 5~lOmin Catalyst S603 KOH Melplate 7331 25〇C, 2~5min Speeding S604 Melplate 7340 25°CJ 2~5min Electroless Nickel S70 Melplate NI-867M1 Melplate NI-867M2 60~70°C, pH about 4.6,5~lOmin Target: 0.5μm Thermal Annealing S80 No 120~140°C, at least 50min Replacement Gold S90 Potassium Cyanideate Melplate AU-6601MA Melplate AU-6601MB 70~80°C, pH about 5.0, l~5min Target: 0.01 to 0.02 μm Table 1 below will be exemplified by the implementation example of the above method: First, Table 1 For the integrated description: In the cleaning step S601, 'acid cleaning liquid can be used, for example: the transparent conductive plate is cleaned with Melplate PC-6122 sulfuric acid solution 100 (ml / liter) for 4 to 6 minutes (for example: can be 1 to The integer value of 2), the sulfuric acid solution comprises: 13% by weight of sulfuric acid, and the weight of 201216134 is 10%~20°/. The stabilizer and weight percentage are 70%~80% water. In the tempering step S602, the transparent conductive plate may be simultaneously immersed together with a solution of Melplate 480A (g/L) and a solution 200 (ml/L) of Melplate 480B for 5 to 10 minutes (for example: 5 to 5) An integer value between 10). Wherein, the 480A solution comprises: 20%~30% by weight of hydrogen peroxide, 2% by weight of di-potassium peroxodisulfate, and 70%~80% by weight of inorganic (inorganic acid, salt); the 480B solution comprises: about 1.3% by weight of ammonium hydrogen fluoride, 40% to 50% by weight of organic acid (Organic acid), weight percentage of 50 %~60% water. In the catalyst step S603, the transparent conductive plate 2 can be simultaneously immersed together with, for example, a potassium hydroxide solution having an equivalent molar concentration of about 0.1 N (ml/liter) and a solution 30 (ml/liter) of Melplate 7331. Up to 5 minutes (for example: an integer value between 2 and 5). Wherein, the 7331 solution comprises: palladium dichloride in an amount of about 1% by weight or less, a stabilizer in an amount of 1% to 1% by weight, and water in an amount of about 90% by weight or less. In the speeding step S604, the transparent conductive plate may be immersed in a solution (ml/liter) of, for example, Melplate 7340 for 2 to 5 minutes (e.g., may be an integer value of 2 to 5). Wherein, the 7340 solution comprises: 45% to 55% by weight of phosphinic acid, and 45% to 55% by weight of water. r 201216134 In the chemical electroless nickel plating step S70, for example: Melplate NI-867M1 solution 60 (ml / liter) and Melplate NI-867M2 solution 120 (ml / liter) at 60 ° C to 70 ° C can be used simultaneously The transparent conductive plate is immersed together at a temperature (for example, an integral temperature value between 60 ° C and 70 ° C) for 5 to 10 minutes (for example, may be an integer value of 5 to 10). Wherein, the NI-867M1 solution comprises: about 20% by weight of nickel sulfate (Nickel Sulfate), a stabilizer of about 1% by weight or less, and 70% to 80% by weight of water; The 867M2 solution comprises: a lead nitrate of about 0.1% by weight or less, a 10% to 20% by weight of a hypophosphoric acid (salt), and a weight percentage of about 10% to 20%. % stabilizer, 60% to 70% by weight of water. In the chemical replacement gold electric shovel step S90, for example, Potassium gold cyanide 2.9 (g / liter), Melplate AU-6601MA solution 100 (ml / liter) and AU-6601MB solution 100 can be used at the same time. (ml/L) soak the transparent conductive plate together for 1 to 5 minutes (for example: may be an integer value between 1 and 5). Wherein, the AU-6601MA solution comprises: about 10% to 20% by weight of a stabilizer, 80% to 90% by weight of water; and the AU-6601MB solution comprises: about 30% by weight~ 40% stabilizer, 60% to 70% by weight of water. Accordingly, the present invention provides a low-impedance electronic control circuit structure that can sequentially have an indium tin oxide electronic control circuit layer 101, a nickel metal layer 105 of at least 0.4 micrometers, and the like, in the substrate 1001 (see FIG. 5). And a gold layer 107 of 0.010 to 0.025 micrometers (for example, 0.01b 0.012, 0.013, 0.014, 0.015, 0.016m 12 201216134 micrometers), the above structure can be viewed from the cross-sectional view of the line according to Fig. In the case where the transparent conductive plate 1 〇〇 comprises the substrate conductive layer (10) 2, the three oxidized electrically controlled circuit layers 〇 1 are obtained by etching the original transparent conductive layer 1 〇〇 2 . And mining: This case uses the special coating of low-impedance electronic control circuit structure (four) road manufacturing branches, the line width technology of this line can be more refined, and can also effectively reduce the panel _ quasi:::::==^ The touch operator 2: the death sentence has been disclosed in the preferred embodiment, and the technical reading is limited to the present invention; only the present invention, and should not be modified (4) 4, is the same as the embodiment. The invention is intended to cover the scope of the invention. Therefore, Bao Yang B shall be subject to the definition of the scope of application for patents. [Simple diagram of the diagram] The diagram is not intended to be the first diagram of the electronic control circuit on the transparent conductive panel of the general touch panel. The figure is the second embodiment of the low-impedance electronic control circuit in the invention. Step S5 in the figure. Fig. 4 of the covering step is a flow chart of the manufacturing method of the chemical electroless process [S] 13 201216134 in the present invention. Figure 5 is a cross-sectional view of the Ι-Γ line segment according to Fig. 1. [Main component symbol description] 100 transparent conductive plate 1001 substrate 1002 transparent conductive layer 101 indium tin oxide electronic control circuit '· 103 signal cable * 105 nickel metal layer 107 gold layer A visible area B invisible area Ι-Γ line segment S10- S100 • Step [S] 14