CN102289315A - Sensor structure based on charge transfer - Google Patents
Sensor structure based on charge transfer Download PDFInfo
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- CN102289315A CN102289315A CN2011101508258A CN201110150825A CN102289315A CN 102289315 A CN102289315 A CN 102289315A CN 2011101508258 A CN2011101508258 A CN 2011101508258A CN 201110150825 A CN201110150825 A CN 201110150825A CN 102289315 A CN102289315 A CN 102289315A
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Abstract
The invention discloses a sensor structure based on charge transfer, which comprises a base material, a first transparent conducting layer, a first lead electrode group, a first protecting layer, a second transparent conducting layer, a second lead electrode group and a second protecting layer, wherein the first transparent conducting layer, the first lead electrode group and the first protecting layer are sequentially formed on the upper surface of the base material; the second transparent conducting layer, the second lead electrode group and the second protecting layer are sequentially formed on the lower surface of the base material; the first lead electrode group consists of a transparent conducting layer and a metal reinforced layer covering the transparent conducting layer; the lead electrode group is electrically connected with the first transparent conducting layer and is covered by the first protecting layer; the second lead electrode group consists of a transparent conducting layer and a metal reinforced layer covering the transparent conducting layer; the lead electrode group is electrically connected with the second transparent conducting layer and is covered by the second protecting layer; and the first lead electrode group is mutually perpendicular to the second lead electrode group. Compared with the traditional method, in the method, processing procedures are reduced, the process difficulty is reduced, the processing efficiency and the yield are greatly improved and the manufacturing cost is low.
Description
Technical field
The present invention relates to the electronic display technology field, specifically, is a kind of sensor construction that shifts based on electric charge.
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Background technology
Contact panel (Touch Panel) has been widely used in products such as household electrical appliances, communication, electronics information and has used, as the palm PC of at present extensive commercialization, various home appliance, recreation inputting interface etc.By the integration of contact panel and display, be available for users to touch the action that input institute desire is carried out according to the function choosing-item in the display frame with finger or pointer.
The contact panel of knowing is mainly laid induction region at substrate surface, and its induction region reaches the purpose of touch-control with finger or pointer touch icon or menu.This inductive means is a kind of based on electric charge transferring position sensor.The employed material of the making of this sensing element mostly adopts the glass that has transparent conductive film (tin indium oxide is commonly called as ITO), makes the user when operation, touches this sensor and reaches the purpose that electric charge shifts.
The ITO electro-conductive glass is on the basis of sodium calcium base or silicon boryl substrate glass, utilizes the method for magnetron sputtering to plate indium oxide layer tin film processing and fabricating and forms.Capacitive touch sensors mainly contains surface capacitance type touch sensor and projected capacitive touch sensor.The surface capacitance type touch sensor only adopts the individual layer ito glass; The projected capacitive touch sensor is compared with the surface capacitance type touch sensor, is to etch different ITO modules on two-layer ITO coated glass.
Existing mostly is a multilayer compound glass screen based on electric charge transferring position sensor; Based on the making of electric charge transferring position sensor mainly is to plate transparent metal transparency conducting layer (ITO) in the method for glass surface by vacuum sputtering coating, make electrode pattern through coating, oven dry, exposure, development, etching, technology such as remove photoresist respectively on the two sides then, make layer of metal with the method for printing low-temperature silver slurry or chemical plating metal again and strengthen routing layer at last.The resolution of the electrode that the mode of printing low-temperature silver slurry can be made is lower, and yields is low; The mode of electroless plating is generally selected to use gold (Au), and not only manufacturing procedure is many, and the poor adhesive force of Au, and the cost of Au is very high simultaneously, and the making yield rate is low.The blocked up meeting of substrate of glass causes weight to increase, and crosses to approach to be easy to damage in manufacturing process, and can't realize curling, and production efficiency is low.
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Summary of the invention
Technical matters:The invention provides a kind of sensor construction that shifts based on electric charge, this sensor construction manufacturing procedure is few, and production cost is low, and yield rate is higher than prior art, has alleviated product weight simultaneously, and can realize curling of product.
Technical scheme:Based on the sensor construction that electric charge shifts, first transparency conducting layer, the first lead-in wire electrode group, first protective seam and second transparency conducting layer that forms successively at the base material lower surface, the second lead-in wire electrode group, second protective seam that comprise base material, form successively at the base material upper surface; The first lead-in wire electrode group is made up of the metal strengthening layer of transparency conducting layer and covering transparency conducting layer, and this lead-in wire electrode group and the first electrodepositing transparent conductive layer gas phase connect, and cover first protective seam on it; The second lead-in wire electrode group is made up of the metal strengthening layer of transparency conducting layer and covering transparency conducting layer, and this lead-in wire electrode group and the second electrodepositing transparent conductive layer gas phase connect, and cover second protective seam on it; The first lead-in wire electrode group and the second lead-in wire electrode group are orthogonal.
Base material is glass, polyethylene terephthalate, polycarbonate, acrylic or polyolefin, thickness 0.05mm ~ 0.7mm.
The thickness of described glass is 0.1mm ~ 0.7mm.
The material of described transparency conducting layer is a kind of or any several composition in tin indium oxide, zinc paste, tin oxide, aluminium, nickel, molybdenum, gold, silver, copper, carbon nano-tube film or the electroconductive resin.
The material of described metal strengthening layer is a kind of or any several alloy in aluminium, nickel, molybdenum, gold, silver or the copper.
Making is based on the method for the sensor construction of electric charge transfer, and step is: the two sides at base material makes transparency conducting layer by the method for vacuum sputtering coating, vacuum ion membrane plating, vacuum thermal evaporation plated film or coating; Make the metal strengthening layer on above-mentioned upper and lower transparent conductor layers surface by vacuum sputtering coating, vacuum ion membrane plating, vacuum thermal evaporation plated film, plating or chemical plating method; By the selective corrosion method at the two-sided figure that forms first transparency conducting layer, the first lead-in wire electrode group, second transparency conducting layer, the second lead-in wire electrode group respectively of base material; Adopt the method for serigraphy, circle roller bat printing or photoetching to make protective seam in the first lead-in wire electrode group and the second lead-in wire electrode group surface; The workpiece of finishing above-mentioned technology is put into selective etching liquid, the metal strengthening layer that covers transparency conducting layer is removed.
Described selective corrosion method adopts the coating photoresists, sticks photosensitive dry film or serigraphy photoresists, and drying, exposure, development, etching, the method for removing photoresist are finished the making of electrode pattern afterwards.
Described selective corrosion method adopts serigraphy or circle roller bat printing directly to make to prevent etching glue, and drying, exposure, development, etching, the method for removing photoresist are finished the making of electrode pattern afterwards.
Photoresists are exposed, when development, etching and demoulding technology, technology is carried out on the two sides simultaneously, or earlier one side is wherein carried out technology, with diaphragm its protection is lived after finishing, and then another side is carried out technology, removes diaphragm after finishing.
Organic substrate is cut the back carry out operation with sheet form; Or use the pattern of volume to volume to carry out operation.
Beneficial effect:
The present invention proposes a kind of new sensor construction, cancelled and made the reinforcement lead-in wire by the mode of printing or plating in the traditional handicraft, the substitute is use the mode that whole metal strengthening layer carries out photoetching is realized based on the electric charge transfer.And the method for two-sided pattern-making, increased the viewing area, reduced accuracy requirement to binding.Structure of the present invention can reduce original operation, has improved yield of products greatly, and cost is lower, has more competitive power.
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Description of drawings
Fig. 1 is a kind of sensor construction synoptic diagram that shifts based on electric charge; A is lead-in wire electrode group among the figure.
Fig. 2 is the synoptic diagram behind base material sputter transparency conducting layer and the metal strengthening layer.
Fig. 3 is the synoptic diagram after the coating.
Fig. 4 is the back synoptic diagram that develops.
Fig. 5 is a synoptic diagram after the etching.
Fig. 6 is the back synoptic diagram that removes photoresist.
Fig. 7 is the synoptic diagram of making behind the protection glue of metal strengthening cabling.
Fig. 8 is the synoptic diagram after second etch is removed the metal strengthening layer.
Fig. 9 is the volume to volume operating type schematic flow sheet of organic substrate.
Figure 10 is the sheet operating type schematic flow sheet of organic substrate.
1 base material; 2 first transparency conducting layers; 3 first metal strengthening layers; 4 first protective seams; 5 second transparency conducting layers; 6 second metal strengthening layers; 7 second protective seams; 8 first photosensitive layers; 9 second photosensitive layers; A is lead-in wire electrode group.
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Embodiment:
The present invention is further illustrated below in conjunction with drawings and Examples, but the present invention is not limited in this embodiment.Selective etching liquid is a kind of or several combination arbitrarily in ferric trichloride, sulfuric acid, hydrochloric acid, nitric acid, hydrofluorite, oxalic acid, ammoniacal liquor or the ammonium chloride.
Selecting rolling polyethylene terephthalate (PET) film is base material, and whole process is carried out operation with the pattern of volume to volume; Referring to Fig. 9.Successively plate tin indium oxide (ITO) layer 2 and copper (Cu) layer 3 in the upper surface of PET film 1 method by vacuum sputtering coating, successively plate tin indium oxide (ITO) layer 5 and copper (Cu) layer 6 in the method for lower surface by vacuum sputtering coating again, referring to Fig. 2; Successively make photosensitive layer 8 and layer 9 in the mode of serigraphy on the two sides, referring to Fig. 3, single exposure, development, etching then made transparent electrode pattern and cabling simultaneously and strengthened pattern, referring to Fig. 6; The zone of strengthening cabling afterwards again makes protection glue-line 4 and layer 7 by the mode of serigraphy, referring to Fig. 7; This protection glue needs to tolerate the immersion of second etch liquid; At last, carry out taking turns second etch again, exposed Cu is outside removed fully for the Cu above the transparent electrode layer.Referring to Fig. 8.So far, promptly finished the making that the present invention is based on electric charge transferring position sensor.
Present embodiment is that with the different of embodiment 1 base material is except selecting PET, reelecting glass or PC or PMMA or polyolefin or flexible material.
Present embodiment is with the different of embodiment 1, makes the transparency conducting layer except the method for using vacuum sputtering coating, can also use the method for vacuum ion membrane plating, vacuum thermal evaporation plated film or coating to make.
Present embodiment is with the different of embodiment 1, makes the metal strengthening layer except the method for using vacuum sputtering coating, can also use vacuum ion membrane plating, vacuum thermal evaporation plated film, plating or chemical plating method to make.
Present embodiment is that with the different of embodiment 1 transparency conducting layer can be multiple transparent conductive material or its array modes such as tin indium oxide (ITO), zinc paste (ZnO), tin oxide (SnO), aluminium (Al), nickel (Ni), molybdenum (Mo), gold (Au), silver (Ag), copper (Cu), carbon nano-tube (CNT) film, electroconductive resin.
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Present embodiment is that with the different of embodiment 1 the metal strengthening layer can be nickel (Ni), molybdenum (Mo), gold (Au), silver (Ag), copper multiple high conductive metal or its array modes such as (Cu).No matter select wherein any material, all need to control suitable coating film thickness, final impedance will be complementary with circuit.
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Present embodiment is with the different of embodiment 1, except the method for using serigraphy is made the photoresists, also can make with coating photoresists or the mode that sticks photosensitive dry film.
Present embodiment is with the different of embodiment 1, except the method for using serigraphy is made anti-etching glue, also can directly make with coating or circle roller bat printing.
Embodiment 9
Present embodiment is with the different of embodiment 1, except using the operating type of volume to volume, also can in advance the PET coiled material be cut into sheet, carries out operation with sheet.Referring to Figure 10.
Embodiment 10
Present embodiment is with the different of embodiment 1; when photoresists were carried out photoetching process, to wherein simultaneously carrying out technology, the exposure of one side, development, etching finished afterwards with diaphragm with its protection firmly earlier; then another side is carried out identical technology, take off from diaphragm after finishing.
Embodiment 11
Based on the sensor construction that electric charge shifts, first transparency conducting layer, the first lead-in wire electrode group, first protective seam and second transparency conducting layer that forms successively at the base material lower surface, the second lead-in wire electrode group, second protective seam that comprise base material, form successively at the base material upper surface; The first lead-in wire electrode group is made up of the metal strengthening layer of transparency conducting layer and covering transparency conducting layer, and this lead-in wire electrode group and the first electrodepositing transparent conductive layer gas phase connect, and cover first protective seam on it; The second lead-in wire electrode group is made up of the metal strengthening layer of transparency conducting layer and covering transparency conducting layer, and this lead-in wire electrode group and the second electrodepositing transparent conductive layer gas phase connect, and cover second protective seam on it; The first lead-in wire electrode group and the second lead-in wire electrode group are orthogonal.Base material is glass, polyethylene terephthalate, polycarbonate, acrylic or polyolefin, thickness 0.05mm ~ 0.7mm.When base material was glass, thickness was 0.1mm ~ 0.7mm.The material of described transparency conducting layer is a kind of or any several composition in tin indium oxide, zinc paste, tin oxide, aluminium, nickel, molybdenum, gold, silver, copper, carbon nano-tube film or the electroconductive resin.The material of described metal strengthening layer is a kind of or any several alloy in aluminium, nickel, molybdenum, gold, silver or the copper.
Making is based on the method for the sensor construction of electric charge transfer, and step is: the two sides at base material makes transparency conducting layer by the method for vacuum sputtering coating, vacuum ion membrane plating, vacuum thermal evaporation plated film or coating; Make the metal strengthening layer on above-mentioned upper and lower transparent conductor layers surface by vacuum sputtering coating, vacuum ion membrane plating, vacuum thermal evaporation plated film, plating or chemical plating method; By the selective corrosion method at the two-sided figure that forms first transparency conducting layer, the first lead-in wire electrode group, second transparency conducting layer, the second lead-in wire electrode group respectively of base material; Adopt the method for serigraphy, circle roller bat printing or photoetching to make protective seam in the first lead-in wire electrode group and the second lead-in wire electrode group surface; The workpiece of finishing above-mentioned technology is put into selective etching liquid, the metal strengthening layer that covers transparency conducting layer is removed.Described selective corrosion method adopts the coating photoresists, sticks photosensitive dry film or serigraphy photoresists, and drying, exposure, development, etching, the method for removing photoresist are finished the making of electrode pattern afterwards.Described selective corrosion method adopts serigraphy or circle roller bat printing directly to make to prevent etching glue, and drying, exposure, development, etching, the method for removing photoresist are finished the making of electrode pattern afterwards.Photoresists are exposed, when development, etching and demoulding technology, technology is carried out on the two sides simultaneously, or earlier one side is wherein carried out technology, with diaphragm its protection is lived after finishing, and then another side is carried out technology, removes diaphragm after finishing.Organic substrate is cut the back carry out operation with sheet form; Or use the pattern of volume to volume to carry out operation.
Not relating to the part prior art that maybe can adopt all same as the prior art in the literary composition is realized.The above is the preferred embodiments of the present invention, but the present invention also is not limited to above only embodiment, does improvement slightly and also will be considered as protection scope of the present invention on embodiment.
Claims (5)
1. the sensor construction that shifts based on electric charge, first transparency conducting layer, the first lead-in wire electrode group, first protective seam and second transparency conducting layer that forms successively at the base material lower surface, the second lead-in wire electrode group, second protective seam that comprise base material, form successively at the base material upper surface; It is characterized in that: the first lead-in wire electrode group is made up of the metal strengthening layer of transparency conducting layer and covering transparency conducting layer, and this lead-in wire electrode group and the first electrodepositing transparent conductive layer gas phase connect, and cover first protective seam on it; The second lead-in wire electrode group is made up of the metal strengthening layer of transparency conducting layer and covering transparency conducting layer, and this lead-in wire electrode group and the second electrodepositing transparent conductive layer gas phase connect, and cover second protective seam on it; The first lead-in wire electrode group and the second lead-in wire electrode group are orthogonal.
2. the sensor construction that shifts based on electric charge according to claim 1 is characterized in that base material is glass, polyethylene terephthalate, polycarbonate, acrylic or polyolefin, thickness 0.05mm ~ 0.7mm.
3. the sensor construction that shifts based on electric charge according to claim 2, the thickness that it is characterized in that described glass is 0.1mm ~ 0.7mm.
4. the sensor construction that shifts based on electric charge according to claim 1, the material that it is characterized in that described transparency conducting layer are a kind of or any several composition in tin indium oxide, zinc paste, tin oxide, aluminium, nickel, molybdenum, gold, silver, copper, carbon nano-tube film or the electroconductive resin.
5. the sensor construction that shifts based on electric charge according to claim 1, the material that it is characterized in that described metal strengthening layer are a kind of or any several alloy in aluminium, nickel, molybdenum, gold, silver or the copper.
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| CN2011101508258A CN102289315A (en) | 2011-06-07 | 2011-06-07 | Sensor structure based on charge transfer |
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| CN2011101508258A CN102289315A (en) | 2011-06-07 | 2011-06-07 | Sensor structure based on charge transfer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104238782A (en) * | 2013-06-07 | 2014-12-24 | 福建省辉锐材料科技有限公司 | Touch screen electrode preparation method |
| CN108255338A (en) * | 2018-01-12 | 2018-07-06 | 京东方科技集团股份有限公司 | Flexible touch screen, touches substrate and preparation method thereof at touch panel |
| CN109799934A (en) * | 2019-01-24 | 2019-05-24 | 蓝思科技（长沙）有限公司 | A kind of preparation method of touch sensing |
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| US20090213082A1 (en) * | 2008-02-22 | 2009-08-27 | Danotech Co., Ltd. | Touch panel with improved electrode pattern |
| CN101845625A (en) * | 2010-06-01 | 2010-09-29 | 无锡阿尔法电子科技有限公司 | Method for chemically plating gold on surface of capacitive touch screen |
| CN202120233U (en) * | 2011-06-07 | 2012-01-18 | 南京福莱克斯光电科技有限公司 | Sensor structure based on electric charge shifting |
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- 2011-06-07 CN CN2011101508258A patent/CN102289315A/en active Pending
Patent Citations (4)
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| CN1809799A (en) * | 2003-04-22 | 2006-07-26 | 触摸传感器技术有限责任公司 | Substrate with multiple conductive layers and methods for making and using same |
| US20090213082A1 (en) * | 2008-02-22 | 2009-08-27 | Danotech Co., Ltd. | Touch panel with improved electrode pattern |
| CN101845625A (en) * | 2010-06-01 | 2010-09-29 | 无锡阿尔法电子科技有限公司 | Method for chemically plating gold on surface of capacitive touch screen |
| CN202120233U (en) * | 2011-06-07 | 2012-01-18 | 南京福莱克斯光电科技有限公司 | Sensor structure based on electric charge shifting |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104238782A (en) * | 2013-06-07 | 2014-12-24 | 福建省辉锐材料科技有限公司 | Touch screen electrode preparation method |
| CN108255338A (en) * | 2018-01-12 | 2018-07-06 | 京东方科技集团股份有限公司 | Flexible touch screen, touches substrate and preparation method thereof at touch panel |
| CN108255338B (en) * | 2018-01-12 | 2021-02-02 | 京东方科技集团股份有限公司 | Flexible touch screen, touch panel, touch substrate and manufacturing method thereof |
| CN109799934A (en) * | 2019-01-24 | 2019-05-24 | 蓝思科技（长沙）有限公司 | A kind of preparation method of touch sensing |
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Application publication date: 20111221 |