WO2021169068A1 - Touch-control panel, touch-control panel manufacturing method and touch-control panel apparatus - Google Patents
Touch-control panel, touch-control panel manufacturing method and touch-control panel apparatus Download PDFInfo
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- WO2021169068A1 WO2021169068A1 PCT/CN2020/092263 CN2020092263W WO2021169068A1 WO 2021169068 A1 WO2021169068 A1 WO 2021169068A1 CN 2020092263 W CN2020092263 W CN 2020092263W WO 2021169068 A1 WO2021169068 A1 WO 2021169068A1
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Classifications
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- G—PHYSICS
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- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
Definitions
- the invention relates to a touch panel, a manufacturing method of the touch panel, and a device including the touch panel.
- transparent conductors can allow light to pass through at the same time and provide appropriate conductivity, so they are often used in many display or touch-related devices.
- transparent conductors can be various metal oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (Cadmium Tin Oxide, CTO) or aluminum doped Zinc oxide (Aluminum-doped Zinc Oxide, AZO).
- ITO indium tin oxide
- IZO indium zinc oxide
- CTO cadmium tin oxide
- CTO cadmium Tin Oxide
- Al doped Zinc oxide Al doped Zinc oxide
- AZO aluminum doped Zinc oxide
- An object of the present invention is to provide a touch panel, which forms a coating structure on a specific surface of a conductive nanostructure (such as a metal nanowire), and the two form a parallel characteristic to achieve the purpose of improving electrical characteristics to meet low resistance and low resistance. Flexible application.
- Another object of the present invention is to provide a touch panel manufacturing.
- Forming a coating structure on a conductive nanostructure is a direct forming addition process, which is relatively simple and can reduce material costs.
- Another object of the present invention is to provide a touch panel device, by designing the peripheral leads to be directly formed from modified conductive nanostructures (such as metal nanowires), so as to achieve a structure that does not need to be overlapped to form a smaller width The surrounding area, and then meet the needs of narrow borders.
- modified conductive nanostructures such as metal nanowires
- a touch panel is characterized by comprising: a substrate, wherein the substrate has a display area and a peripheral area; peripheral leads are provided in the peripheral area of the substrate; and a touch sensor
- the electrode is arranged in the display area of the substrate, the touch sensing electrode is electrically connected to the peripheral lead, wherein the peripheral lead and the touch sensing electrode include a plurality of conductive nanostructures and a film applied to the conductive nanostructure
- the interface between the conductive nanostructure and the film layer in the peripheral lead essentially has a covering structure.
- an electrode is characterized by comprising: conductive nanostructures and a film layer added to the conductive nanostructures, and the interface between the conductive nanostructures and the film layer substantially has a coating structure.
- the coating structure includes a plating layer, and the plating layer completely covers the interface between the conductive nanostructure and the film layer.
- the coating structure includes an electroless plating layer, an electroplating layer, or a combination thereof.
- the film layer has an incompletely cured state, and the coating structure is formed along the surface of the conductive nanostructure and located at the interface between the conductive nanostructure and the film layer.
- the film layer has a first layer area and a second layer area, and the curing state of the second layer area is higher than the curing state of the first layer area; in the first layer area, The covering structure is formed along the surface of the conductive nanostructure and located at the interface between the conductive nanostructure and the film layer. In the second layer region, at least part of the surface of the conductive nanostructure has a coating structure, or the surface of the conductive nanostructure has a coating structure without a coating structure. Compared with the two-layer area, in the area with a smaller degree of curing, a larger proportion of the surface of the conductive nanostructure is covered by the covering structure.
- the film layer is filled between the adjacent conductive nanostructures, and the coating structure does not exist alone in the film layer.
- the conductive nanostructure includes a metal nanowire, and the coating structure completely covers the interface between the metal nanowire and the film layer, and a uniform coating layer is formed at the interface.
- the uniform coating layer may be a coating layer with uniform thickness.
- the covering structure is a layered structure made of a conductive material, an island-shaped protrusion structure, a dot-shaped protrusion structure, or a combination thereof.
- the conductive material is silver, gold, platinum, iridium, rhodium, palladium, osmium, or an alloy containing the foregoing materials.
- the covering structure is a single-layer structure made of a single metal material or alloy material; or the covering structure is two or more layers made of two or more metal materials or alloy materials. Layer structure.
- the cladding structure is an electroless copper plating layer, an electroless copper plating, an electroless copper-nickel plating layer, an electroless silver plating layer, or a combination thereof.
- the covering structure is an electroless plating layer, and the electroless plating layer completely covers the interface between the conductive nanostructure and the film layer. In other words, there is an electroless plating layer between the surface of the conductive nanostructure and the film layer.
- it includes: applying a film layer on a conductive layer containing conductive nanostructures, and making the film layer reach a pre-cured or incompletely cured state; and performing a modification step to make a film
- the covering structure is formed on at least a part of the surface of the conductive nanostructure, so that the interface between the conductive nanostructure and the film layer substantially has the covering structure.
- the modification step includes: immersing the film layer and the conductive nanostructure in an electroless plating solution, and the electroless plating solution infiltrates the film layer and contacts the conductive nanostructure to make the metal Precipitated from the surface of the conductive nanostructure.
- the electroless plating layer completely covers the interface between the conductive nanostructure and the film layer.
- the covering structure is formed along the surface of the conductive nanostructure and located at the interface between the conductive nanostructure and the film layer.
- adding a film layer to a conductive layer containing conductive nanostructures includes: coating a polymer on the conductive layer; controlling curing conditions to make the polymer reach a pre-cured or incompletely cured state .
- the polymer is a light-curing type, a heat-curing type or other curing types.
- applying a film layer on a conductive layer containing conductive nanostructures includes: coating a polymer on the conductive layer; controlling curing conditions to make the polymer form the film layer, and the film layer There is a first layer area and a second layer area, and the curing state of the second layer area is higher than the curing state of the first layer area.
- controlling the curing conditions includes introducing oxygen and controlling the concentration of oxygen in the first layer region and the second layer region.
- the modification step includes: an electroless plating step, an electroplating step, or a combination thereof.
- the modification step is only implemented in the peripheral area.
- a step of shielding the display area is further included before the modification step.
- a method for manufacturing a touch panel is characterized by comprising: providing a substrate having a display area and a peripheral area; and disposing metal nanowires in the display area and the peripheral area to form a metal nanowire Wire layer; add a film layer on the metal nanowire layer, and make the film layer reach a pre-cured or incompletely cured state; the patterning step includes: patterning the metal nanowire layer and the metal nanowire layer in the display area
- the film layer is used to form a touch sensing electrode and the metal nanowire layer and the film layer located in the peripheral area are patterned to form a peripheral lead.
- the touch sensing electrode is electrically connected to the peripheral lead; a modification step is performed to make A covering structure is formed on the surface of the metal nanowire of the peripheral lead, so that the interface between the metal nanowire and the film layer substantially has the covering structure.
- the modification step includes: contacting the film layer of the peripheral lead with the metal nanowire layer with an electroless plating solution, and the electroless plating solution penetrates into the film layer and interacts with the metal nanowire layer. The contact causes the metal to precipitate on the surface of the metal nanowire.
- the modification step includes an electroless plating step, an electroplating step, or a combination thereof.
- a device includes a touch panel, including: a substrate, wherein the substrate has a display area and a peripheral area; peripheral leads are provided in the peripheral area of the substrate; and The touch sensing electrode is disposed in the display area of the substrate, and the touch sensing electrode is electrically connected to the peripheral lead, wherein the peripheral lead and the touch sensing electrode include a plurality of conductive nanostructures and a conductive nano Structured film layer, the interface between the conductive nanostructure in the peripheral lead and the film layer substantially has a covering structure.
- the device includes a display, a portable phone, a tablet computer, a wearable device, a car device, a notebook computer, or a polarizer.
- Fig. 1A is a schematic diagram of the first step according to some embodiments of the present invention.
- 1B is a schematic diagram of the second step according to some embodiments of the present invention.
- 1C is a schematic diagram of the third step according to some embodiments of the present invention.
- FIG. 2 is a schematic top view of a touch panel according to some embodiments of the present invention.
- Fig. 2A is a schematic cross-sectional view along the line A-A of Fig. 2;
- Fig. 2B is a schematic cross-sectional view of the line B-B in Fig. 2;
- 3A to 3D are schematic diagrams of a manufacturing method of a touch panel according to some embodiments of the present invention.
- FIG. 4 is a schematic cross-sectional view of a touch panel according to another embodiment of the present invention.
- FIG. 5 is a schematic diagram of a touch panel according to another embodiment of the present invention.
- Fig. 5A is a schematic cross-sectional view of the line A-A of Fig. 5;
- FIG. 6 is a schematic diagram of a touch panel according to another embodiment of the present invention.
- FIG. 7 is a schematic diagram of a touch panel according to another embodiment of the present invention.
- FIG. 8 shows the total thickness of the first area and the second area under the condition of passing 20% oxygen and curing different energy to the film layer, and the thickness of the second area after being etched by alkali solution;
- Figure 9 shows an SEM image of metal nanowires undergoing electroless plating without a film
- FIG. 10 is an SEM image of the metal nanowires evolving into silver nanowires with cladding structure with the electroless plating time.
- the error or range of the index value is generally within 20%, preferably within 10%, and more preferably Within five percent. If there is no clear explanation in the text, the values mentioned are regarded as approximate values, that is, they have the error or range indicated by "approximately”, “approximately” or “approximately”.
- conductive nanostructures generally mean that the sheet resistance of the layer/film composed of nanostructures is less than 500 ohms/square, preferably less than 200 ohms/square, and more Preferably, it is less than 100 ohm/square; and nanostructure generally refers to a nano-sized structure, such as but not limited to having at least one dimension (such as wire diameter, length, width, thickness, etc.) in the order of 10-9 meters The linear structure, column structure, sheet structure, grid structure, tubular structure and so on.
- Some embodiments of the present invention provide a method for modifying conductive nanostructures (taking nanowires as an example), which may include the following steps:
- the metal nanowires 190 are first laid on the substrate 110 to form a metal nanowire layer NWL, such as a nano silver wire layer, a nano gold wire layer or a nano copper wire layer coating.
- NWL such as a nano silver wire layer, a nano gold wire layer or a nano copper wire layer coating.
- the specific method of this embodiment is as follows: a dispersion or ink with metal nanowires 190 is formed on the substrate 110 by a coating method, and dried to coat the surface of the substrate 110 with the metal nanowires 190, and then It is formed into a metal nanowire layer NWL disposed on the substrate 110.
- the solvent and other substances are volatilized, and the metal nanowires 190 are distributed on the surface of the substrate 110 in a random manner; preferably, the metal nanowires 190 will be fixed on the surface of the substrate 110 and not
- the metal nanowire layer NWL is formed until it falls off, and the metal nanowires 190 can contact each other to provide a continuous current path, thereby forming a conductive network.
- the metal nanowires 190 form a mutual Contact to form a path for passing electrons. Taking silver nanowires as an example, one silver nanowire and another silver nanowire will be in direct contact at the crossing position, thus forming a low-resistance electron transfer path.
- the sheet resistance of a region or a structure when the sheet resistance of a region or a structure is higher than 108 ohm/square (ohm/square), it can be regarded as electrical insulation, preferably higher than 104 ohm/square (ohm/square). ), 3000 ohm/square (ohm/square), 1000 ohm/square (ohm/square), 350 ohm/square (ohm/square), or 100 ohm/square (ohm/square). In one embodiment, the sheet resistance of the silver nanowire layer composed of silver nanowires is less than 100 ohm/square.
- the film layer 130 is set to cover the metal nanowire 190 and the degree of curing of the film layer 130 is controlled.
- a suitable polymer is coated on the metal nanowires 190, and the polymer with a fluid state/property can penetrate between the metal nanowires 190 to form a filler, and the metal nanowires 190 will be embedded in the film layer 130.
- a composite structure CS is formed; and the conditions for polymer coating and curing, such as temperature, light curing parameters, etc., are controlled to make the polymer appear pre-cured or incompletely cured; or the film layer 130 has different curing degrees,
- the lower layer area ie, the area close to the substrate 110
- the upper layer area ie, the area far from the substrate 110
- the polymer is applied and the film layer 130 is added to the metal nanowire 190, and the metal nanowire 190 will be embedded in the pre-cured or incompletely cured film 130 to form the composite structure CS.
- the film layer 130 is formed of an insulating material.
- the material of the film layer 130 may be a non-conductive resin or other organic materials, such as polyacrylate, epoxy resin, polyurethane, polysilane, polysiloxane, poly(silicon-acrylic), poly Ethylene (polyethylene; PE), polypropylene (Polypropylene; PP), polyvinyl butyral (PVB), polycarbonate (PC), acrylonitrile-butadiene-styrene copolymer (Acrylonitrile) butadiene styrene; ABS), poly(3,4-ethylenedioxythiophene) (PEDOT), poly(styrene sulfonic acid) (PSS) or ceramic materials, etc.
- a non-conductive resin or other organic materials such as polyacrylate, epoxy resin, polyurethane, polysilane, polysiloxane, poly(silicon-acrylic), poly Ethylene (polyethylene; PE), poly
- the film layer 130 may be formed by spin coating, spray coating, printing, or the like.
- the thickness of the film layer 130 is approximately 20 nanometers to 10 micrometers, or 50 nanometers to 200 nanometers, or 30 to 100 nanometers.
- the thickness of the film layer 130 may be approximately 90 nanometers or 100 nanometers.
- the metal nanowire 190 and the film layer 130 are drawn as an integral structure layer, but the present invention is not limited to this.
- the metal nanowire 190 and the film layer 130 may constitute other types of structure layers. , Such as the structure on top of each other and so on.
- the method for controlling the curing state of the film layer 130 is to use curing conditions of different energy to cure the film layer, so that the film layer reaches a degree of incomplete curing.
- the curing behavior of the film layer is the use of the bonding change of the film layer during curing, so the curing degree of a film layer can be defined as the ratio of the bonding strength of the film layer to the bonding strength of the fully cured film layer (this Examples are expressed in percentages).
- the film material of a commercially available product originally it is necessary to use 500mJ of light energy to irradiate in a low-oxygen atmosphere for 4 minutes to achieve complete curing.
- the film layer 130 can be controlled to have different curing states at different depths (that is, thickness), and gas can be introduced when the film layer is cured, so that the gas concentration on the surface and the bottom of the film layer is different, thereby promoting the film layer
- the curing reaction on the surface produces the phenomenon of gas blocking curing, resulting in the first layer area and the second layer area of the film with different degrees of curing.
- the curing state of the second layer area belongs to the bottom of the film layer, which is the area with a higher degree of curing.
- the cured state of the first layer area belongs to the surface of the film, which is the area with a lower degree of curing.
- the specific method is to control the gas (such as oxygen) concentration and/or curing energy under curing conditions.
- the gas concentration can be 20% oxygen, 10% oxygen, 3% oxygen or ⁇ 1% oxygen, etc., and the curing energy will be based on the film layer.
- the higher the oxygen concentration the more obvious the phenomenon of oxygen barrier curing on the surface of the film will be promoted, and the thicker the thickness of the region with a lower degree of curing in the first region, and the higher the degree of curing in the second region.
- the thickness of the region is relatively thin, so if the thickness of the first region is from thick to thin, the order is 20% oxygen, 10% oxygen, 3% oxygen or ⁇ 1% oxygen.
- the curing degree of the first region is about 60%, and the thickness of the first region is about 23.4nm (or 12% of the total film thickness). %); and the curing degree of the second region is about 99-100% (close to complete curing), and the thickness of the second region is about 168.1 nm (or 88% of the total film thickness).
- Fig. 8 shows the total thickness of the first area (uncured) and the second area (close to fully cured or fully cured) formed by irradiation with curing energies of 250mJ, 500mJ, and 1000mJ under the condition that the film layer is exposed to 20% oxygen.
- the thickness of the second region remaining after the film layer is etched by the alkaline solution It can be observed that as the curing energy increases, the thickness of the first region will decrease accordingly (that is, the thickness reduced after etching). When the curing energy is 1000mJ, the thickness of the first region is about 8.8nm (or 5% of the total film thickness); and the thickness of the second region is about 195.9nm (or 95% of the total film thickness) ).
- the present invention focuses on the film layer 130 applied to the metal nanowire 190, and the coating structure 180 can be grown along the surface of the metal nanowire 190 by controlling the curing degree or curing depth of the film layer 130.
- the dispersion or the ink may also contain polymers and similar compositions, but this is not the focus of the present invention.
- the degree of curing of the film layer 130 can be controlled at 0%, 30%, 60%, 75%, 95%, 98%, 0%-95%, 0%-98%, 95%-98%, 60%-98 %, 60% to 75% and other conditions.
- the incomplete curing or only pre-curing referred to in the embodiments of the present invention can be defined as the bonding strength of the film layer is different from the bonding strength of the fully cured film layer, that is, the ratio of the two is not 100%.
- the scope of the embodiments of the present invention can be defined as the bonding strength of the film layer is different from the bonding strength of the fully cured film layer, that is, the ratio of the two is not 100%.
- a modification step is then performed to form a metal nanowire layer NWL composed of a plurality of modified metal nanowires 190.
- the initial metal nanowire 190 is modified to form a covering structure 180 on the surface thereof to form the modified metal nanowire 190.
- the symbols "v" and "o" represent the metal nanowires 190 before and after modification, respectively.
- an electroless plating/electrolytic method may be used to form the covering structure 180, and the covering structure 180 may be a layered structure made of a conductive material, an island-shaped protrusion structure, a dot-shaped protrusion structure, or a combination thereof.
- the coverage rate accounts for more than 80%, 90-95%, 90-99%, or 90-100% of the total surface area (a coverage rate of 100% means that the surface of the initial metal nanowire 190 is not exposed); the aforementioned conductivity
- the material may be silver, gold, platinum, nickel, copper, iridium, rhodium, palladium, osmium, or alloys containing the foregoing materials, or alloys that do not contain the foregoing materials, or the like.
- the cladding structure 180 is a single-layer structure made of a single conductive material, for example, an electroless copper plating layer, an electroplating copper layer, or an electroless copper-nickel alloy plating layer is formed; or the cladding structure 180 has more than two types
- an electroless copper plating layer is formed first, and then an electroless silver plating layer is formed.
- the following electroless copper plating solutions solutions containing copper ions, chelating agents, alkaline agents, reducing agents, buffers and stabilizers, etc.
- the metal nanowires 190 and the film layer 130 are immersed in the electroless plating
- the copper solution and the electroless copper plating solution can penetrate into the pre-cured or incompletely cured film layer 130 and contact the surface of the metal nanowire 190 by capillary phenomenon.
- the metal nanowire 190 is used as a catalytic point or a nucleation point to facilitate After the precipitation of copper, an electroless copper plating layer is deposited on the metal nanowire 190 to form a cladding structure 180.
- the cladding structure 180 generally grows according to the initial shape of the metal nanowire 190, and forms a structure covering the metal nanowire 190 with the modification time; on the contrary, there is no metal nanowire 190 in the original composite structure CS. In other words, after good control, the coating structure 180 is formed on the interface between the metal nanowire 190 and the film layer 130, and there is no surface in the film layer 130 that does not contact the metal nanowire 190 The covering structure 180 exists alone.
- the metal nanowires 190 in the conductive network will be covered by the covering structure 180, and the covering structure 180 will be located between the interface formed by the metal nanowires 190 and the film layer 130; the covering structure 180
- the metal nanowire 190 covered with it can be regarded as a whole, and the gap between the nanowire and the nanowire is still occupied by the material of the film layer 130.
- the film layer 130 and the electroless plating solution/electrolyte solution can be made of materials that match each other.
- a non-alkali-resistant polymer can be used to make the film layer 130
- the electroless plating solution can be an alkaline solution.
- an electroless plating solution can also be used to attack (like etching) the incompletely cured film layer 130 to facilitate the aforementioned modification reaction.
- the metal nanowire 190 and the film layer 130 are immersed in the electroless plating solution/electrolytic solution, the solution will first attack the incompletely cured film layer 130.
- the metal ions such as copper ions
- Metal nanowires 190 such as silver nanowires
- the film layer 130 acts as a control layer or a limiting layer in the above reaction process, which limits the growth reaction of the coating structure 180 to the interface between the metal nanowires 190 and the film layer 130, so that the coating structure 180 can be controlled.
- Figure 9 shows that the metal nanowire 190 is subjected to the above electroless plating without the protection of the film 130. It can be found that the copper layer grows randomly and uncontrollably. Some metal nanowires 190 grow thick copper layers, but some metal nanowires 190 grow thick copper layers. There is no copper layer on the wire 190; that is to say, the film layer 130 can achieve the effect of limiting the position of copper precipitation to the interface between the metal nanowire 190 and the film layer 130, so the application of the present invention has a better effect in sensing/transmitting signals. Good consistency.
- a curing step may be included to completely cure the film layer 130.
- the film layer 130 can be completely cured by light, heat or other methods.
- the following table is a specific embodiment of the present invention. It can be found that the degree of curing of the film layer 130 is 0%, 95%, 98%, 0%-95%, 0%-98%, 95%-98% and other conditions. Copper can effectively reduce the surface resistance (or sheet resistance) of the film.
- the degree of curing can be measured in many ways. In addition to the calculation of the bond strength mentioned above, for example, solvent extraction is performed on the polymer film, and the weight of the uncured polymer dissolved in the solvent is measured. The total weight of the polymer is compared to calculate the solubility percentage (%Sol); another example is for thermosetting polymer materials, thermal analysis technology can also be used to determine the degree of curing.
- the covering structure 180 is formed on the surface of each metal nanowire 190 and covers the entire surface of the metal nanowire 190, and grows outward.
- a highly conductive material may be used to make the covering structure 180, for example, copper is used as the covering structure 180 to cover the surface of the silver nanowire and located at the interface between the silver nanowire and the film layer.
- the conductivity of silver materials is higher than that of copper materials, the overall conductivity of the silver nanowire layer is low due to the size of the silver nanowires and the contact state (but the resistance is still low and sufficient to transmit Electrical signal), and after modification, the conductivity of the silver nanowire 190 with the covering structure 180 is higher than that of the unmodified silver nanowire 190, that is, the modified metal nanowire layer NWL can form a low
- the conductive layer of resistance value (compared to the unmodified metal nanowire layer NWL, the surface resistance can be reduced by about 100 to 10000 times); and the conductive layer can be used to make electrode structures for various purposes, such as flexible Conductive substrates or wireless charging coils, antenna structures, etc. in the field.
- the electrode structure may include at least a metal nanowire and a film layer additionally covering the metal nanowire, and at least a part or all of the surface of the metal nanowire (ie, the interface between the metal nanowire 190 and the film layer 130) has a coating Coating, the introduction of batch coating can improve the conductivity of the metal nanowire layer NWL.
- FIG. 10 is an SEM evolution diagram of the metal nanowire 190 evolving into a silver nanowire with a coating structure 180 with the electroless plating time.
- the copper layer is along the surface of the metal nanowire (ie the interface corresponding to the metal nanowire 190 and the film layer 130), after plating, the observed shape of copper will be quite similar to the initial type of the metal nanowire The copper will grow uniformly to form an outer layer structure with similar size (such as thickness).
- the present invention can be applied to manufacture touch panels (as shown in FIG. 2) using the aforementioned method, such as but not limited to touch panels used with displays.
- the touch panel 100 includes a substrate 110, a peripheral lead 120, and a touch panel.
- the sensing electrode TE where the touch sensing electrode TE includes a plurality of unmodified initial conductive nanostructures, the peripheral lead 120 includes a plurality of modified conductive nanostructures, and the modified conductive nanostructures have a coating structure 180( Referring to FIG. 1C), the conductive nanostructure may be a metal nanowire 190.
- FIG. 2 is a schematic top view of a touch panel 100 according to some embodiments of the present invention. Referring to FIG.
- the touch panel 100 may include a substrate 110, a peripheral lead 120, a mark 140, and a touch sensing electrode TE.
- the touch sensing electrode TE is approximately located in the display area VA, and is composed of a plurality of unmodified initial metal nanowires.
- the metal nanowire layer NWL formed by 190 is patterned; the modified metal nanowire 190 has a covering structure 180, and the modified metal nanowire 190 is patterned to form a peripheral lead 120 or/and a mark 140.
- the conductivity can be improved, thereby making the peripheral lead 120; in addition, in the display area VA, the metal nanowire 190 and the additional film
- the layer 130 is in direct contact (that is, the metal nanowires 190 in the display area VA are not modified).
- the covering structure 180 is not formed on the surface of the metal nanowires 190 in the display area VA, so the display can be maintained
- the conductive network formed by the metal nanowires 190 in the region VA has good optical properties.
- the substrate 110 has a display area VA and a peripheral area PA.
- the peripheral area PA is arranged on the side of the display area VA.
- the peripheral area PA may be arranged around the display area VA (that is, covering the right, left, and The upper and lower sides) are frame-shaped areas, but in other embodiments, the peripheral area PA may be an L-shaped area disposed on the left and lower sides of the display area VA. As shown in FIG.
- peripheral leads 120 there are eight sets of peripheral leads 120 in this embodiment, all of which are arranged in the peripheral area PA of the substrate 110; the touch sensing electrode TE is arranged in the display area VA of the substrate 110 and is electrically connected to the peripheral leads 120.
- FIGS. 3A to 3D show the manufacturing method of the aforementioned touch panel 100: first, a substrate 110 is provided, on which a pre-defined peripheral area PA and a display area VA are provided. Next, unmodified metal nanowires 190 are disposed on the substrate 110 to form a metal nanowire layer NWL in the peripheral area PA and the display area VA (as shown in FIG. 3A); then, a film layer 130 is disposed on the unmodified On the metal nanowire 190, the film layer 130 is made to cover the unmodified metal nanowire 190, and the film layer 130 is in a pre-cured or incompletely cured state (as shown in FIG.
- the metal nanowire layer NWL in the display area VA is not After modification, the metal nanowire layer NWL located in the peripheral area PA will be modified, that is to say, due to the aforementioned modification step, the peripheral lead 120 is composed of the modified metal nanowire 190.
- a metal nanowire layer NWL including at least metal nanowires 190 is first coated on the peripheral area PA and the display area VA on the substrate 110;
- the first part of the metal nanowire layer NWL is mainly located in the display area VA, and the second part is mainly formed in the peripheral area PA.
- the specific method in this embodiment is: forming a dispersion or slurry (ink) with metal nanowires 190 on the substrate 110 by a coating method, and drying it to coat the surface of the substrate 110 with the metal nanowires 190. Furthermore, it is formed into a metal nanowire layer NWL disposed on the substrate 110.
- the solvent and other substances are volatilized, and the metal nanowires 190 are distributed on the surface of the substrate 110 in a random manner; preferably, the metal nanowires 190 will be fixed on the surface of the substrate 110 and not To fall off to form the metal nanowire layer NWL, and the metal nanowires 190 can be in contact with each other to provide a continuous current path, thereby forming a conductive network. In other words, the metal nanowires 190 are in contact with each other at crossing positions to form electron transfer. path of.
- one silver nanowire and another silver nanowire will form a direct contact state at the crossing position (that is, the silver-silver contact interface), so a low-resistance electron transfer path is formed. Subsequent modification operations will not affect or change the low-resistance structure of the "silver-silver contact".
- the surface of the metal nanowire 190 is coated with a high-conductivity coating structure 180, which will improve the electrical characteristics of the end product. Effect.
- the above-mentioned dispersion may be water, alcohol, ketone, ether, hydrocarbon or aromatic solvent (benzene, toluene, xylene, etc.); the above-mentioned dispersion may also contain additives, surfactants or adhesives.
- Mixtures such as carboxymethyl cellulose (CMC), 2-hydroxyethyl cellulose (hydroxyethyl Cellulose; HEC), hydroxypropyl methylcellulose (HPMC), sulfonate, sulfate , Disulfonate, sulfosuccinate, phosphate or fluorine-containing surfactant, etc.
- the dispersion or slurry containing the metal nanowires 190 can be formed on the surface of the substrate 110 and the aforementioned metal layer ML in any manner, such as but not limited to: screen printing, nozzle coating, roller coating, etc.; In one embodiment, a roll-to-roll (RTR) process may be used to coat the dispersion or slurry containing the metal nanowires 190 on the continuously supplied substrate 110 and the surface of the aforementioned metal layer ML.
- RTR roll-to-roll
- metal nanowires is a collective term that refers to a collection of metal wires containing multiple element metals, metal alloys or metal compounds (including metal oxides), and the number of metal nanowires contained therein , Does not affect the scope of protection claimed by the present invention; and at least one cross-sectional dimension (ie the diameter of the cross-section) of a single metal nanowire is less than about 500 nm, preferably less than about 100 nm, and more preferably less than about 50 nm; and the present invention is called
- the “wire” metal nanostructure mainly has a high aspect ratio, for example, between about 10 and 100,000.
- the aspect ratio (length: diameter of the cross section) of the metal nanowire can be greater than About 10, preferably greater than about 50, and more preferably greater than about 100; the metal nanowire can be any metal, including but not limited to silver, gold, copper, nickel, and gold-plated silver. Other terms, such as silk, fiber, tube, etc., if they also have the above-mentioned size and high aspect ratio, are also within the scope of the present invention.
- the step of coating the film layer 130 is performed.
- the film layer 130 is disposed on the unmodified metal nanowire 190 so that the film layer 130 covers the unmodified metal nanowire 190, and then the patterning step and the modification step are performed in sequence.
- the polymer of the film layer 130 after coating can penetrate between the metal nanowires 190 to form a filler, and the metal nanowires 190 are embedded in the film layer 130 to form a composite structure CS.
- the unmodified metal nanowires 190 will be embedded in the film layer 130 to form a composite structure CS.
- the film layer 130 is formed of an insulating material.
- the material of the film layer 130 may be a non-conductive resin or other organic materials.
- the film layer 130 may be formed by spin coating, spray coating, printing, or the like.
- the thickness of the film layer 130 is approximately 20 nanometers to 10 micrometers, or 50 nanometers to 200 nanometers, or 30 to 100 nanometers.
- the thickness of the film layer 130 may be approximately 90 nanometers or 100 nanometers.
- the polymer ie, the film layer 130
- the film layer 130 will be in an incompletely cured or pre-cured state. For details, please refer to the foregoing description.
- Patterning is then performed, as shown in Figure 3C.
- the metal nanowire layer NWL and the film layer 130 formed by the unmodified metal nanowires 190 in the display area VA are patterned to form an electrode structure; similarly, there is no electrode structure in the peripheral area PA.
- the metal nanowire layer NWL and the film layer 130 formed by the modified metal nanowire 190 are also patterned to form an electrode structure, and the electrode structure in these two regions constitutes an electrode group applicable to touch sensing.
- the metal nanowire layer NWL containing unmodified metal nanowires 190 in the display area VA and the peripheral area PA can be etched at the same time, and the etching shield (such as photoresist) can be used in the same process at one time.
- a patterned metal nanowire layer NWL is formed in the display area VA and the peripheral area PA.
- the etching solution can be used for components that can etch silver, for example, the main component of the etching solution is H3PO4 (the ratio is about 55% to 70%) And HNO3 (approximately 5% to 15%) to remove silver materials in the same process.
- the main component of the etching solution is ferric chloride/nitric acid or phosphoric acid/hydrogen peroxide.
- the patterned metal nanowire layer NWL fabricated on the peripheral area PA is the peripheral lead 120.
- the peripheral lead 120 and the mark 140 formed by the second part of the metal nanowire layer NWL can be fabricated on the peripheral area PA (refer to FIG. 2 for cooperation).
- the mark 140 can be widely interpreted as a pattern of non-electrical function, but it is not limited to this.
- the peripheral lead 120 and the mark 140 may be made of the same metal nanowire layer NWL.
- the metal nanowire layer NWL of the display area VA is patterned.
- the first part of the metal nanowire layer NWL in the display area VA can be patterned with the aforementioned etching solution to make the touch sensing electrode TE of this embodiment in the display area VA (e.g., photoresist).
- the touch sensing electrode TE can be electrically connected to the peripheral lead 120.
- the touch sensing electrode TE may be a metal nanowire layer NWL including at least an unmodified metal nanowire 190.
- the patterned metal nanowire layer NWL forms touch sensing electrodes TE in the display area VA, and forms peripheral leads 120 in the peripheral area PA.
- the electrodes in the two areas are made of the same layer of material to achieve electrical connection.
- the metal nanowire layer NWL and the film layer 130 can also form a mark 140 in the peripheral area PA.
- the mark 140 can be widely interpreted as a pattern with non-electrical function, but is not limited to this.
- the peripheral lead 120 and the mark 140 may be made of the same metal nanowire layer NWL.
- a modification step is performed to form a metal nanowire layer NWL composed of a plurality of modified metal nanowires 190. That is, after the modification, at least a part of the initial metal nanowires 190 in the metal nanowire layer NWL is modified to form a covering structure 180 on the surface thereof to form the modified metal nanowires 190.
- an electroless plating method may be used to form the coating structure 180, and an electroless plating solution may be used to infiltrate the incompletely cured film layer 130 to cause the reactive metal ions in the electroless plating solution to precipitate on the surface of the metal nanowire 190.
- the covering structure 180 is formed, which can be a layered structure made of conductive material, an island-like protrusion structure, a dot-like protrusion structure or a combination thereof; the covering structure 180 can also be a single material or a single material made of an alloy material. Layer or multi-layer structure, or single-layer or multi-layer structure made of multiple materials or alloy materials.
- the modification step is performed along the surface of the metal nanowire 190, so the shape of the covering structure 180 will grow substantially in accordance with the shape of the metal nanowire 190.
- the growth conditions of the coating structure 180 (such as the electroless plating time, the composition concentration of the electroless plating solution, etc.) can be controlled so that the coating structure 180 does not grow excessively, but only covers the metal nanowire 190 Surface;
- the incompletely cured film 130 also plays a role of limiting and controlling. Accordingly, the covering structure 180 formed in the modification step will not separate/grow on the film layer 130 without contacting the metal nanowire 190, and a covering structure will be formed between the surface of the metal nanowire 190 and the film layer 130.
- the aforementioned film 130 is still filled between adjacent metal nanowires 190.
- the covering structure 180 formed by electroless/electrolytic plating has a high density. Compared with the size of the peripheral lead 120 (for example, a line width of 10um), the defect size of the covering structure 180 is 0.01 of the size of the peripheral lead 120. ⁇ 0.001 times, so even if the cladding structure 180 has defects, it will not cause problems such as disconnection of the peripheral leads 120.
- the modification step is only performed in the peripheral area PA.
- the “v” symbol is drawn in the touch sensing electrode TE shown in FIG. 3D to represent that the touch sensing electrode TE contains unmodified
- the initial metal nanowires 190 and the "o" symbol is drawn in the peripheral lead 120 shown in FIG. 3D to represent that the peripheral lead 120 is composed of modified metal nanowires 190.
- the covering structure 180 is not drawn.
- a photoresist or similar material can be covered on the display area VA to block the touch sensing electrode TE, so that the electroless plating solution can penetrate into the incompletely cured film layer 130 in the peripheral area PA.
- the reactive metal ions are precipitated on the surface of the metal nanowires 190 in the peripheral area PA by the oxidation-reduction reaction to form the covering structure 180 to form the modified metal nanowires 190.
- the touch sensing electrode TE is still made of metal nanowires 190 before modification, it has good light transmittance, for example, the light transmittance (Transmission) of visible light (for example, the wavelength is between 400nm-700nm) is greater than about 90 %, 91%, 92%, 93% or more.
- the touch panel 100 shown in FIG. 2 can be manufactured by the above steps.
- the patterned metal nanowire layer NWL in the display area VA constitutes the touch sensing electrode TE of the touch panel 100; and the peripheral area
- the patterned metal nanowire layer NWL in the PA constitutes the peripheral lead 120 of the touch panel 100
- the metal nanowire 190 in the peripheral lead 120 has a covering structure 180 (the symbol "O" in the figure represents the modified The metal nanowire 190), the peripheral lead 120 can be connected to an external controller for touch control or other signal transmission.
- the covering structure 180 can have the same or similar structural appearance as the metal nanowire 190, and the film layer 130 is filled between adjacent metal nanowires 190.
- a substrate 110 is provided, on which a pre-defined peripheral area PA and a display area VA are provided.
- a substrate 110 is provided, on which a pre-defined peripheral area PA and a display area VA are provided.
- a film layer 130 on the unmodified metal nanowires 190 ,
- the film layer 130 is covered on the unmodified metal nanowires 190, and the film layer 130 is in a pre-cured or incompletely cured state; then a modification step is performed to form the metal nanowires 190 with a covering structure 180 , Where the metal nanowires 190 located in the display area VA are not modified, and the metal nanowires 190 located in the peripheral area PA will be modified; then patterning is performed to form a patterned metal nanowire layer NWL, which is located in the display area VA The pre-modified metal nanowire layer NWL is patterned to form the touch sensing
- the modification step of this embodiment may use photoresist or similar materials to cover the display area VA to shield the first part of the metal nanowire layer NWL in the display area VA, but only for the second part of the metal nanowire layer NWL in the peripheral area PA. Partial modification is performed to make the reactive metal ions in the electroless plating solution precipitate on the surface of the metal nanowires 190 in the peripheral area PA to form the covering structure 180 to form the modified metal nanowires 190.
- the patterning step of this embodiment can use an etching solution that can simultaneously etch the metal nanowires 190 before modification and the metal nanowires 190 after modification, together with an etching shield (such as a photoresist), so as to be in the display area at one time in the same process.
- a patterned metal nanowire layer NWL is made on the VA and the peripheral area PA.
- the ability to simultaneously etch the pre-modified metal nanowires 190 and the post-modified metal nanowires 190 refers to the ratio of the etching medium to the etching rate of the pre-modified metal nanowires 190 and the post-modified metal nanowires 190. In about 0.1-10 or 0.01-100.
- the etching solution can be used to etch copper and silver components, such as the etching solution.
- the main components are H3PO4 (approximately 55% to 70%) and HNO3 (approximately 5% to 15%) to remove copper and silver materials in the same process.
- the main component of the etching solution is ferric chloride/nitric acid or phosphoric acid/hydrogen peroxide.
- an etching mask (such as a photoresist) can be used to pattern the first part of the metal nanowire layer NWL in the display area VA with the aforementioned etching solution to fabricate the touch sensing electrode TE of this embodiment.
- the touch sensing electrode TE can be electrically connected to the peripheral lead 120.
- the touch sensing electrode TE may be a metal nanowire layer NWL including at least the metal nanowire 190 before modification.
- the modified metal nanowires 190 form peripheral leads 120, so that the touch sensing electrode TE is electrically connected to the peripheral leads 120 for signal transmission.
- the metal nanowire layer NWL can also form a mark 140 in the peripheral area PA, and the mark 140 can be widely interpreted as a pattern of non-electrical function, but it is not limited to this.
- the peripheral lead 120 and the mark 140 may be made of modified metal nanowires 190 in the same layer.
- the metal nanowire layer NWL located in the display area VA and the peripheral area PA can be patterned by different etching steps (that is, using different etching solutions).
- the metal nanowire layer NWL is nanometer
- the etching solution used in the display area VA can be an etching solution that can only etch silver
- the etching solution used in the peripheral area PA can be an etching solution that can etch silver/copper. Capable of etching solution.
- the touch panel 100 of the present invention can also be manufactured through the above steps, and the specific structure is as described above, and will not be repeated here.
- the cross section of the peripheral lead 120 and the mark 140 in this article is a quadrilateral (for example, the rectangle drawn in FIG. 2A), but the peripheral lead 120 and the mark have a structure type
- the state and quantity can be changed according to actual applications, and are not limited by the text and drawings in this article.
- the mark 140 is set in the bonding area BA of the peripheral area PA (please refer to FIG. 2 and FIG. 2A).
- the step of connecting the board to the touch panel 100 ie, the bonding step
- the mark 140 can be any check mark, pattern or label required in the process, which is within the protection category of the present invention.
- the mark 140 can have any possible shape, such as a circle, a quadrilateral, a cross, an L shape, a T shape, and so on.
- the non-conductive area 136 is a gap to isolate adjacent peripheral leads 120.
- the non-conductive area 136 is a gap to isolate the adjacent touch sensing electrodes TE; in one embodiment, the above-mentioned etching method can be used to form the gap between adjacent touch sensing electrodes TE.
- the touch sensing electrode TE and the first intermediate layer M1 can be made of the same metal nanowire layer NWL (such as a silver nanowire layer), so the metal nanowire layer will form a touch in the display area VA.
- NWL such as a silver nanowire layer
- the sensing electrode TE is controlled, and a peripheral lead 120 is formed in the peripheral area PA.
- the touch sensing electrode TE and the peripheral lead 120 form a connection structure at the junction of the display area VA and the peripheral area PA to facilitate the touch sensing electrode TE and the peripheral lead 120 forms a conducting circuit.
- the peripheral leads 120 of the touch panel 100 can be directly formed by yellow light and etching process, which is a high-precision process and does not require alignment, so there is no need to reserve alignment errors in the peripheral area. Space, thereby reducing the width of the peripheral area PA, thereby achieving the narrow bezel requirement of the display.
- the width of the peripheral leads 120 of the touch panel 100 of some embodiments of the present invention is about 5um to 30um, and the distance between adjacent peripheral leads 120 is about 5um to 30um, or the peripheral leads 120 of the touch panel 100
- the width is about 3um to 20um, and the distance between adjacent peripheral leads 120 is about 3um to 20um.
- the width of the peripheral area PA can also reach a size less than 2mm, which is about 20% or less than traditional touch panel products. More border sizes.
- the touch sensing electrodes TE are arranged in a non-staggered arrangement.
- the touch sensing electrode TE is an elongated electrode extending along the first direction D1 and having a width change in the second direction D2, and does not intersect each other.
- the touch sensing electrode TE It may have an appropriate shape, and should not limit the scope of the present invention.
- the touch sensing electrode TE adopts a single-layer configuration, in which the touch position can be obtained by detecting the change of the capacitance value of each touch sensing electrode TE.
- the composite structure CS of the display area VA can have conductivity and light permeability, for example, the visible light of the touch sensing electrode TE (
- the light transmittance (Transmission) with a wavelength between about 400nm-700nm may be greater than about 80%, and the surface resistance (surface resistance) may be between about 10 to 1000 ohm/square; or,
- the light transmittance (Transmission) of the visible light (for example, the wavelength is between about 400nm-700nm) of the touch sensing electrode TE is greater than about 85%, and the surface resistance is about 50 to 500 ohms/square (ohm/square). square).
- the light transmittance (Transmission) of the visible light (for example, a wavelength between about 400 nm and 700 nm) of the touch sensing electrode TE is greater than about 88% or greater than about 90%. In one embodiment, the haze of the touch sensing electrode TE is less than 3.0, 2.5, 2.0, or 1.5.
- the formed metal nanowires 190 may be further subjected to post-processing to improve the contact characteristics of the metal nanowires 190 at the intersections, for example, to increase the contact area, thereby increasing its electrical conductivity.
- the post-processing may include, for example, heating , Plasma, corona discharge, UV ozone, pressure or a combination of the above process steps.
- a roller can be used to apply pressure thereon.
- a pressure of 50 to 3400 psi can be applied to the metal nanowire layer by one or more rollers, preferably In order to be able to apply a pressure of 100 to 1000 psi, 200 to 800 psi, or 300 to 500 psi; the above-mentioned step of applying pressure is preferably implemented before the step of coating the film layer 130.
- heating and pressure post-processing can be performed at the same time; in detail, the formed metal nanowire 190 can be heated by applying pressure through one or more rollers as described above, for example, by the rollers.
- the pressure is 10 to 500 psi, preferably 40 to 100 psi; while heating the roller to between about 70°C and 200°C, preferably between about 100°C and 175°C, the conductivity of the metal nanowire 190 can be improved.
- the metal nanowires 190 can preferably be exposed to a reducing agent for post-processing.
- the metal nanowires 190 composed of nano-silver wires can preferably be exposed to a silver reducing agent for post-processing.
- the silver reducing agent includes Borohydrides, such as sodium borohydride; boron nitrogen compounds, such as dimethylaminoborane (DMAB); or gas reducing agents, such as hydrogen (H2); and the exposure time is about 10 seconds to about 30 minutes, Preferably, it is about 1 minute to about 10 minutes.
- the contact strength or area of the metal nanowire 190 at the intersection can be strengthened, and the contact surface (ie, the first surface 191) of the metal nanowire 190 at the intersection can not be modified. Influence.
- the touch panel 100 may further include a protective layer 150, which can be applied to various different embodiments, and only the embodiment of FIG. 2B is taken as an example for illustration. 4 shows a schematic cross-sectional view of the protective layer 150 formed on the embodiment of FIG. 2B.
- the material of the protective layer 150 can refer to the example material of the film layer 130 described above.
- the protective layer 150 covers the touch panel 100 comprehensively, that is, the protective layer 150 covers the touch sensing electrode TE, the peripheral leads 120 and the mark 140.
- the protective layer 150 can be filled in the non-conductive area 136 between adjacent peripheral leads 120 to isolate the adjacent peripheral leads 120, or the protective layer 150 can be filled in the non-conductive area 136 between adjacent touch sensing electrodes TE, thereby Isolate adjacent touch sensing electrodes TE.
- FIG. 5 is a schematic top view of a touch panel 100 according to some embodiments of the present invention.
- the touch sensing electrode TE of this embodiment adopts a double-layer configuration;
- FIG. 5A is a cross-sectional view taken along line A-A in FIG. 5.
- the first touch electrode TE1 and the second touch electrode TE2 are used to illustrate the configuration adopted in this embodiment.
- the first touch electrode TE1 is formed on one surface (such as the upper surface) of the substrate 110
- the second touch electrode TE2 is formed on the other surface (the lower surface) of the substrate 110, so that the first touch electrode TE1 and the second touch electrode TE2 They are electrically insulated from each other; and the first touch electrode TE1 is electrically connected to its corresponding peripheral lead 120; in the same way, the second touch electrode TE2 is connected to its corresponding peripheral lead 120.
- the first touch electrode TE1 is a plurality of elongated electrodes arranged along the first direction D1
- the second touch electrode TE2 is a plurality of elongated electrodes arranged along the second direction D2.
- the elongated touch sensing electrode TE1 and the elongated touch sensing electrode TE2 extend in different directions, but are intersected with each other.
- the first touch sensing electrode TE1 and the second touch sensing electrode TE2 can be used to transmit control signals and receive touch sensing signals, respectively. From then on, the touch position can be obtained by detecting the signal change (for example, the capacitance change) between the first touch sensing electrode TE1 and the second touch sensing electrode TE2.
- the user can perform touch sensing at each point on the substrate 110.
- the first touch sensing electrode TE1 and/or the second touch sensing electrode TE2 can be made of at least unmodified metal nanowires 190 and the film layer 130, and the peripheral leads 120 located on both sides of the substrate 110 And/or the mark 140 (the mark 140 is not drawn in FIG. 5 and FIG. 5A, but does not affect the description of this embodiment) can be made of the modified metal nanowire 190 and the film layer 130, that is, it is located on the substrate
- the peripheral leads 120 and/or the marks 140 on both sides of the 110 can be formed by forming the covering structure 180 on the surface of the metal nanowire 190 according to the aforementioned method.
- the double-sided touch panel manufactured in the embodiment of the present invention can be manufactured in the following manner: first, a substrate 110 is provided, on which a pre-defined peripheral area PA and a display area VA are provided. Next, a metal nanowire layer NWL is formed on the first and second opposite surfaces (such as the upper surface and the lower surface) of the substrate 110 in the peripheral area PA and the display area VA of the first and second surfaces, respectively; and then the incompletely cured
- the film layer 130 is on the metal nanowire layer NWL; then a double-sided patterning step, such as double-sided yellowing, etching, etc., is performed to produce a patterned metal nanowire layer NWL on the first and second surfaces of the substrate 110; then A double-sided modification step is performed to form a coating structure 180 on the metal nanowires 190 on the upper and lower surfaces of the substrate 110. For example, a modification step is performed on the peripheral area PA of the upper and lower surfaces of the substrate 110, and the modified metal nanowires 190 are The peripheral lead 120 is formed.
- the patterned product may be immersed in the plating solution, and the upper and lower surfaces of the substrate 110 may be modified at the same time.
- any surface (such as the upper surface or the lower surface) of the substrate 110 may further include a mark 140, which is also composed of modified metal nanowires 190.
- the manufacturing method of the double-sided touch panel in the embodiment of the present invention can be formed by stacking two sets of single-sided touch panels in the same direction or in the opposite direction. Take reverse direction stacking as an example.
- the touch electrodes of the first group of single-sided touch panels can be set up (for example, closest to the user, but not limited to this), and the second group of single-sided touch panels
- the touch electrodes of the touch panel are arranged downward (for example, farthest away from the user, but not limited to this), and the two sets of touch panel substrates are assembled and fixed with optical glue or other similar adhesives to form a double Surface type touch panel.
- the touch panel 100 in this embodiment further includes a shielded wire 160 disposed in the peripheral area PA.
- the shield wire 160 mainly surrounds the touch sensing electrode TE and the peripheral lead 120, and the shield wire 160 extends to the bonding area and is electrically connected to the ground terminal of the flexible circuit board. Therefore, the shield wire 160 can shield or eliminate signal interference or static electricity. Electrostatic Discharge (ESD) protection, especially small current changes caused by human hands touching the connecting wires around the touch device.
- ESD Electrostatic Discharge
- the shielding wire 160 can be made of a modified metal nanowire 190, and the description of the peripheral lead 120 or the mark 140 can be referred to.
- the shielding wire 160, the peripheral lead 120, and the mark 140 may be made of the modified metal nanowire 190 and the film layer 130 in the same layer, and the metal nanowire 190 (such as the silver nanowire layer) ) Can be modified according to the aforementioned process to have the covering structure 180, the specific method can refer to the previous implementation method; the touch sensing electrode TE is made of the unmodified metal nanowire layer NWL.
- FIG. 7 shows another embodiment of the single-sided touch panel 100 of the present invention, which is a single-sided bridge touch panel.
- the touch sensing electrode TE formed after the above-mentioned patterning step of the transparent conductive layer (ie, the metal nanowire layer NWL) formed on the substrate 110 may include: along the first direction The first touch sensing electrodes TE1 arranged in D1, the second touch sensing electrodes TE2 arranged along the second direction D2, and the connecting electrodes CE electrically connected to two adjacent first touch sensing electrodes TE1, that is, the first The touch sensing electrode TE1, the second touch sensing electrode TE2, and the connecting electrode CE are made of unmodified metal nanowires 190 and the film layer 130;
- the insulating block 164 may be disposed on the connecting electrode CE, for example, two Silicon oxide forms the insulating block 164; and the bridging wire 162 is further disposed on the insulating block 164, for example,
- the modified metal nanowire 190 and the film layer 130 can be used to make the peripheral lead 120, which is electrically connected to the first contact.
- the sensing electrode TE1 and the second touch sensing electrode TE2 are controlled to transmit signals.
- the metal nanowire modification method of the present invention can be applied to produce sensing electrodes that do not need to consider light transmittance, such as touch pads of notebook computers (but not limited to this), antenna structures, wireless charging coils, and so on.
- the method of manufacturing the sensing electrode includes: disposing an unmodified metal nanowire 190 on the substrate 110 to form a metal nanowire layer NWL on the substrate 110; then disposing a film layer 130 on the unmodified metal nanowire On the wire 190, the film layer 130 is covered on the unmodified metal nanowire 190, and the film layer 130 is in a pre-cured or incompletely cured state; then patterning is performed to form a patterned metal nanowire layer NWL, In order to produce sensing electrodes for sensing touch position/touch gestures; then a modification step is performed to form a covering structure 180 on the aforementioned metal nanowire 190, so that the patterned metal nanowire layer NWL is modified That is to say, due to the aforementioned modification step, the sensing electrode used for sensing the touch
- the cladding structure 180 can have the same or similar structural appearance as the metal nanowire 190, and the film layer 130 is filled between adjacent metal nanowires 190. Since objects such as the touch panel of the notebook computer, the antenna structure, and the coil for wireless charging do not need to transmit light, the above-mentioned modified metal nanowire 190 can be used to make the sensing electrode.
- the sensing electrode of this embodiment can be connected to a wire to be connected to an external circuit to transmit a signal.
- the wiring in this embodiment can be equivalent to the aforementioned peripheral lead 120, and is also composed of modified metal nanowires 190; in another embodiment, the wiring can be made of other conductive materials, such as silver wiring, Copper traces and so on.
- sequence of the modifying step and the patterning step can be adjusted to each other.
- the metal nanowire modification method of the present invention can be applied to produce electrode plates that do not require patterns, such as the cathode plate/anode plate of a battery (but not limited to this).
- the method of manufacturing an electrode plate includes: disposing an unmodified metal nanowire 190 on the substrate 110 to form a metal nanowire layer NWL on the substrate 110; then disposing a film layer 130 on the unmodified metal nanowire On the wire 190, the film layer 130 is covered on the unmodified metal nanowire 190, and the film layer 130 is in a pre-cured or incompletely cured state; then a modification step is performed to form the metal nanowire 190 with a film
- the covering structure 180 causes the metal nanowire layer NWL to be modified, that is to say, due to the aforementioned modification step, the entire surface of the electrode plate on the substrate is composed of the modified metal nanowire 190.
- the cladding structure 180 can have the same or similar structural appearance as the metal nanowire 190, and the film layer 130 is filled between
- the electrode plate of this embodiment can be connected with wires to connect with external circuits to transmit signals.
- the wiring in this embodiment can be equivalent to the aforementioned peripheral lead 120, and is also composed of modified metal nanowires 190; in another embodiment, the wiring can be made of other conductive materials, such as silver wiring, Copper traces and so on.
- the touch panel 100/sensing electrode/electrode plate described herein can be manufactured by a roll-to-roll process, and the roll-to-roll coating process uses existing equipment And it can be fully automated, which can significantly reduce the cost of manufacturing touch panels.
- the specific process of roll-to-roll coating is as follows: First, select a flexible substrate 110, and install the roll-shaped substrate 110 between the two rollers, and use the motor to drive the rollers so that the substrate 110 can run between the two rollers. The movement path of the continuity process.
- a storage tank, a spray device, a brushing device and the like are used to deposit a slurry containing metal nanowires 190 on the surface of the substrate 110 to form metal nanowires 190; a spray head is used to deposit the polymer on the surface of the substrate 110.
- the polymer is cured into the film layer 130, patterning and modification are performed. Subsequently, the completed touch panel 100 is rolled out by the roller at the end of the production line to form a touch sensor tape.
- the touch sensor tape of this embodiment may further include the above-mentioned protective layer 150, which comprehensively covers the uncut touch panel 100 on the touch sensor roll, that is, the protective layer 150 can cover the touch sensor.
- the uncut touch panels 100 on the roll are then cut and separated into individual touch panels 100.
- the substrate 110 is preferably a transparent substrate. Specifically, it may be a rigid transparent substrate or a flexible transparent substrate.
- the material may be selected from glass, acrylic (polymethylmethacrylate; PMMA), polymethylmethacrylate (PMMA), and Polyvinyl Chloride (PVC), polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate Ester (polycarbonate; PC), polystyrene (PS), cycloolefin polymer (Cyclo Olefin Polymers; COP), colorless polyimide (Colorless Polyimide; CPI), cycloolefin copolymer (cycloolefin copolymer; COC) ) And other transparent materials.
- PMMA polymethylmethacrylate
- PMMA polymethylmethacrylate
- PVC Polyvinyl Chloride
- PP polypropylene
- PET polyethylene terephthalate
- PEN polyethylene na
- the substrate 110 can be preferably subjected to pre-processing steps, such as a surface modification process, or an additional adhesive layer or a resin layer is coated on the surface of the substrate 110 .
- the metal nanowires 190 may be silver nanowires or silver nanofibers, which may have an average diameter of about 20 to 100 nanometers, and an average length of about 20 to 100 microns, preferably The average diameter is about 20 to 70 nanometers, and the average length is about 20 to 70 microns (that is, the aspect ratio is 1000). In some embodiments, the diameter of the metal nanowire 190 can be between 70 nanometers and 80 nanometers, and the length is about 8 micrometers.
- the roll-to-roll production line can adjust the sequence of multiple coating steps along the motion path of the substrate as required or can incorporate any number of additional stations as required.
- pressure rollers or plasma equipment can be installed in the production line.
- the touch panel of the embodiment of the present invention can be assembled with other electronic devices, such as a display with touch function.
- the substrate 110 can be bonded to a display component, such as a liquid crystal display component or an organic light emitting diode (OLED) display component, both Optical glue or other similar adhesives can be used for bonding between them; and the touch sensing electrode TE can also be bonded with the outer cover layer (such as protective glass) by optical glue.
- the touch panels, antennas, etc. of the embodiments of the present invention can be applied to electronic devices such as portable phones, tablet computers, notebook computers, etc., and flexible products can also be applied.
- the touch panel of the embodiment of the present invention can also be fabricated on a polarizer.
- the electrodes of the embodiments of the present invention can also be fabricated on wearable devices (such as watches, glasses, smart clothes, smart shoes, etc.), automotive devices (such as dashboards, driving recorders, car rearview mirrors, car windows, etc.).
- the modified metal nanowires 190 can have better conductive properties than before the modification.
- the error space reserved in the alignment process can be eliminated, so that the peripheral area can be effectively reduced width.
- the conductive nanostructures on one or both sides of the substrate can be modified.
- addition that is, the process directly on the conductive nanostructure
- a subtractive process instead of a subtractive process, so the process efficiency can be improved and the material cost can be reduced.
- Some embodiments of the present invention can be applied to flexible conductive substrates.
- the exposed surface of the metal nanowire 190 is fully covered by the covering structure, that is, the covering structure is spaced between the metal nanowire and the film layer.
- the cladding structure is not laminated on the metal nanowire layer in a layered or massive manner, but is affected by the initial shape of the metal nanowire, and the metal nanowire is used as a seed crystal. , And limited by the film layer, it grows uniformly along the interface between the metal nanowire and the film layer.
- the film layer is used as a limiting layer to restrict/control the growth of the covering structure along the exposed surface of the metal nanowire 190. Due to the finite layer, the covering structure can be uniformly grown on the exposed surface of the metal nanowire 190.
- the growth of the covering structure is controllable and uniform.
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Abstract
Description
Claims (22)
- 一种触控面板,其特征在于,包含:A touch panel is characterized in that it comprises:一基板,其中该基板具有一显示区与一周边区;A substrate, wherein the substrate has a display area and a peripheral area;一周边引线,设置于该基板的该周边区;以及A peripheral lead set in the peripheral area of the substrate; and一触控感应电极,设置于该基板的该显示区,该触控感应电极电性连接该周边引线,其中该周边引线与该触控感应电极包括多个导电纳米结构及一外加于所述导电纳米结构的膜层,该周边引线中的所述导电纳米结构与所述膜层的界面实质具有披覆结构。A touch sensing electrode is disposed in the display area of the substrate, and the touch sensing electrode is electrically connected to the peripheral lead, wherein the peripheral lead and the touch sensing electrode include a plurality of conductive nanostructures and an externally applied to the conductive For a nanostructured film layer, the interface between the conductive nanostructure in the peripheral lead and the film layer substantially has a covering structure.
- 根据权利要求1所述的触控面板,其特征在于,该披覆结构包括镀层,所述镀层完全包覆所述导电纳米结构与所述膜层的界面。The touch panel of claim 1, wherein the coating structure comprises a plating layer, and the plating layer completely covers the interface between the conductive nanostructure and the film layer.
- 根据权利要求1所述的触控面板,其特征在于,所述膜层具有一未完全固化状态,该披覆结构沿着所述导电纳米结构的表面所形成并位于所述导电纳米结构与所述膜层的界面。The touch panel of claim 1, wherein the film layer has an incompletely cured state, and the covering structure is formed along the surface of the conductive nanostructure and located between the conductive nanostructure and the conductive nanostructure. The interface of the film layer.
- 根据权利要求3所述的触控面板,其特征在于,在所述未完全固化状态下,所述膜层具有一第一层区域与一第二层区域,该第二层区域的固化状态高于该第一层区域的固化状态;在该第一层区域中,该披覆结构沿着所述导电纳米结构的表面所形成并位于所述导电纳米结构与所述膜层的界面。The touch panel of claim 3, wherein in the incompletely cured state, the film layer has a first layer area and a second layer area, and the second layer area has a high curing state In the cured state of the first layer region; in the first layer region, the covering structure is formed along the surface of the conductive nanostructure and located at the interface between the conductive nanostructure and the film layer.
- 根据权利要求1所述的触控面板,其特征在于,相邻的所述导电纳米结构之间填充有该膜层,该膜层中没有单独存在的所述披覆结构。The touch panel of claim 1, wherein the film layer is filled between the adjacent conductive nanostructures, and the coating structure does not exist alone in the film layer.
- 根据权利要求1所述的触控面板,其特征在于,所述导电纳米结构包含金属纳米线,该披覆结构完全包覆所述金属纳米线与所述膜层的界面,并在所述界面形成均匀的披覆层。The touch panel according to claim 1, wherein the conductive nanostructures comprise metal nanowires, and the coating structure completely covers the interface between the metal nanowires and the film layer, and is positioned at the interface Form a uniform coating layer.
- 根据权利要求1所述的触控面板,其特征在于,该披覆结构为导电材料所制成的层状结构、岛状突起结构、点状突起结构或其组合。The touch panel of claim 1, wherein the covering structure is a layered structure made of conductive material, an island-shaped protrusion structure, a dot-shaped protrusion structure, or a combination thereof.
- 根据权利要求7所述的触控面板,其中该导电材料为银、金、铜、镍、铂、铱、铑、钯、锇或包含前述材料的合金。7. The touch panel of claim 7, wherein the conductive material is silver, gold, copper, nickel, platinum, iridium, rhodium, palladium, osmium, or an alloy containing the foregoing materials.
- 根据权利要求1所述的触控面板,其特征在于,该披覆结构为单一金属材料或合金材料所制成的单层结构;或者该披覆结构为两种以上的金属材料或合金材料所制成的两层或多层结构。The touch panel of claim 1, wherein the covering structure is a single-layer structure made of a single metal material or alloy material; or the covering structure is made of two or more metal materials or alloy materials. A two-layer or multi-layer structure made.
- 根据权利要求1所述的触控面板,其特征在于,该披覆结构为化学镀铜层、电镀铜、化学镀铜镍层、化学镀银层或其组合。The touch panel of claim 1, wherein the coating structure is an electroless copper plating layer, an electroless copper plating, an electroless copper and nickel plating layer, an electroless silver plating layer, or a combination thereof.
- 一种触控面板的制作方法,其特征在于,包含:A manufacturing method of a touch panel, which is characterized in that it comprises:提供一基板,具有显示区与周边区;Provide a substrate with a display area and a peripheral area;设置导电纳米结构于该显示区与该周边区以形成一导电层;Disposing conductive nanostructures in the display area and the peripheral area to form a conductive layer;外加一膜层于该导电层上,并使该膜层达到预固化或未完全固化状态;Add a film layer on the conductive layer, and make the film layer reach a pre-cured or incompletely cured state;进行图案化步骤,包括:图案化位于该显示区的该导电纳米结构与该膜层以形成一触控感应电极及图案化位于该周边区的该导电纳米结构与该膜层以形成一周边引线,该触控感应电极电性连接该周边引线;以及The step of patterning includes: patterning the conductive nanostructure and the film in the display area to form a touch sensing electrode and patterning the conductive nanostructure and the film in the peripheral area to form a peripheral lead , The touch sensing electrode is electrically connected to the peripheral lead; and进行改质步骤,使一披覆结构成型于该周边引线的所述导电纳米结构的表面,使所述导电纳米结构与所述膜层的界面实质具有该披覆结构。A modification step is performed to form a covering structure on the surface of the conductive nanostructure of the peripheral lead, so that the interface between the conductive nanostructure and the film layer substantially has the covering structure.
- 根据权利要求11所述的触控面板的制作方法,其特征在于,该改质步骤包括:将该膜层与该导电纳米结构浸入化学镀溶液,所述化学镀溶液渗入该膜层中并与所述导电纳米结构接触,使金属析出于所述导电纳米结构的表面。The method of manufacturing a touch panel according to claim 11, wherein the modification step comprises: immersing the film layer and the conductive nanostructure in an electroless plating solution, and the electroless plating solution infiltrates the film layer and interacts with The contact of the conductive nanostructure causes the metal to precipitate out of the surface of the conductive nanostructure.
- 根据权利要求12所述的触控面板的制作方法,其特征在于,该披覆结构沿着所述导电纳米结构的表面所形成并位于所述导电纳米结构与所述膜层的界面。The method of manufacturing a touch panel according to claim 12, wherein the covering structure is formed along the surface of the conductive nanostructure and located at the interface between the conductive nanostructure and the film layer.
- 根据权利要求11所述的触控面板的制作方法,其特征在于,外加一膜层于该导电层上包括:The manufacturing method of the touch panel according to claim 11, wherein adding a film layer on the conductive layer comprises:涂布一聚合物于该导电层上;Coating a polymer on the conductive layer;控制固化条件使该聚合物达到预固化或未完全固化状态。Control the curing conditions to make the polymer reach a pre-cured or incompletely cured state.
- 根据权利要求11所述的触控面板的制作方法,其特征在于,外加一膜层于该导电层上包括:The manufacturing method of the touch panel according to claim 11, wherein adding a film layer on the conductive layer comprises:涂布一聚合物于该导电层上;Coating a polymer on the conductive layer;控制固化条件使该聚合物达到预固化或未完全固化状态,所述预固化或未完全固化的膜层具有一第一层区域与一第二层区域,该第二层区域的固化状态高于该第一层区域的固化状态。The curing conditions are controlled to make the polymer reach a pre-cured or incompletely cured state. The pre-cured or incompletely cured film layer has a first layer area and a second layer area, and the cured state of the second layer area is higher than The cured state of the first layer area.
- 根据权利要求15所述的触控面板的制作方法,其特征在于,在该第一层区域中,该披覆结构沿着所述导电纳米结构的表面所形成并位于所述导电 纳米结构与所述膜层的界面。The method of manufacturing a touch panel according to claim 15, wherein in the first layer region, the covering structure is formed along the surface of the conductive nanostructure and located between the conductive nanostructure and the conductive nanostructure. The interface of the film layer.
- 根据权利要求15所述的触控面板的制作方法,其特征在于,控制固化条件包括引入气体,并控制所述气体在该第一层区域与该第二层区域的浓度。15. The manufacturing method of the touch panel according to claim 15, wherein controlling the curing conditions includes introducing gas and controlling the concentration of the gas in the first layer area and the second layer area.
- 根据权利要求11所述的触控面板的制作方法,其特征在于,该改质步骤包括:化学镀步骤、电镀步骤或其组合。11. The manufacturing method of the touch panel according to claim 11, wherein the modification step comprises: an electroless plating step, an electroplating step, or a combination thereof.
- 根据权利要求11所述的触控面板的制作方法,其特征在于,该改质步骤仅在该周边区实施。11. The manufacturing method of the touch panel according to claim 11, wherein the modification step is implemented only in the peripheral area.
- 根据权利要求11所述的触控面板的制作方法,其特征在于,在该改质步骤之前更包括遮蔽该显示区的步骤。11. The manufacturing method of the touch panel according to claim 11, further comprising a step of shielding the display area before the modification step.
- 一种包含根据权利要求1所述的触控面板的装置。A device comprising the touch panel according to claim 1.
- 根据权利要求21所述的装置,其特征在于,该装置包括显示器、可携式电话、平板计算机、穿戴装置、车用装置、笔记本电脑或偏光片。The device of claim 21, wherein the device comprises a display, a portable phone, a tablet computer, a wearable device, a car device, a notebook computer, or a polarizer.
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