TW201214565A - Nitriding treatment method and nitriding treatment device - Google Patents

Nitriding treatment method and nitriding treatment device Download PDF

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Publication number
TW201214565A
TW201214565A TW100111000A TW100111000A TW201214565A TW 201214565 A TW201214565 A TW 201214565A TW 100111000 A TW100111000 A TW 100111000A TW 100111000 A TW100111000 A TW 100111000A TW 201214565 A TW201214565 A TW 201214565A
Authority
TW
Taiwan
Prior art keywords
temperature
plasma
platform
nitriding treatment
nitrogen
Prior art date
Application number
TW100111000A
Other languages
English (en)
Chinese (zh)
Inventor
Kazuyoshi Yamazaki
Hiroshi Kobayashi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201214565A publication Critical patent/TW201214565A/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Plasma Technology (AREA)
TW100111000A 2010-03-31 2011-03-30 Nitriding treatment method and nitriding treatment device TW201214565A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010081909 2010-03-31

Publications (1)

Publication Number Publication Date
TW201214565A true TW201214565A (en) 2012-04-01

Family

ID=44762504

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100111000A TW201214565A (en) 2010-03-31 2011-03-30 Nitriding treatment method and nitriding treatment device

Country Status (2)

Country Link
TW (1) TW201214565A (fr)
WO (1) WO2011125550A1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4222707B2 (ja) * 2000-03-24 2009-02-12 東京エレクトロン株式会社 プラズマ処理装置及び方法、ガス供給リング及び誘電体
JP4041722B2 (ja) * 2002-11-05 2008-01-30 キヤノンアネルバ株式会社 プラズマ処理装置
JP5347214B2 (ja) * 2006-06-12 2013-11-20 東京エレクトロン株式会社 載置台構造及び熱処理装置

Also Published As

Publication number Publication date
WO2011125550A1 (fr) 2011-10-13

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