TW201214565A - Nitriding treatment method and nitriding treatment device - Google Patents
Nitriding treatment method and nitriding treatment device Download PDFInfo
- Publication number
- TW201214565A TW201214565A TW100111000A TW100111000A TW201214565A TW 201214565 A TW201214565 A TW 201214565A TW 100111000 A TW100111000 A TW 100111000A TW 100111000 A TW100111000 A TW 100111000A TW 201214565 A TW201214565 A TW 201214565A
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- plasma
- platform
- nitriding treatment
- nitrogen
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010081909 | 2010-03-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201214565A true TW201214565A (en) | 2012-04-01 |
Family
ID=44762504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100111000A TW201214565A (en) | 2010-03-31 | 2011-03-30 | Nitriding treatment method and nitriding treatment device |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW201214565A (fr) |
WO (1) | WO2011125550A1 (fr) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4222707B2 (ja) * | 2000-03-24 | 2009-02-12 | 東京エレクトロン株式会社 | プラズマ処理装置及び方法、ガス供給リング及び誘電体 |
JP4041722B2 (ja) * | 2002-11-05 | 2008-01-30 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
JP5347214B2 (ja) * | 2006-06-12 | 2013-11-20 | 東京エレクトロン株式会社 | 載置台構造及び熱処理装置 |
-
2011
- 2011-03-25 WO PCT/JP2011/057401 patent/WO2011125550A1/fr active Application Filing
- 2011-03-30 TW TW100111000A patent/TW201214565A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2011125550A1 (fr) | 2011-10-13 |
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