201200830 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於將被塗布有塗布液之被處理基板置 於減壓環境下，並藉由此來對於前述基板上之塗布膜施加 乾燥處理之減壓乾燥方法及減壓乾燥裝置。 【先前技術】 例如，在F P D (平面面板顯示器）之製造中，係藉由 所謂的光微影工程而形成電路圖案。 前述光微影工程，具體而言係如同下述一般地進行。 首先，在玻璃基板等之被處理基板上成膜特定之膜， 之後，將身爲塗布液之光阻劑作塗布，並形成光阻膜。而 後，對應於電路圖案而使光阻膜曝光，再對此進行顯像處 理。 在此種光微影工程中，係如圖8 ( a )中所示一般，而 在光阻圖案R處使其具有相異之膜厚（厚膜部R1和薄膜部 R2 )，並利用此來進行複數次之蝕刻處理，藉由此，係能 夠將光罩數以及工程數減少。另外，此種光阻圖案R，係 可經由使用有在1枚中而具備有光之透過率爲相異的部分 之半色調遮罩（halftone mask)的半（半色調）曝光處理 ，而得到之。 針對在使用了被適用有此半曝光之光阻圖案R的情況 時之電路圖案形成工程，使用圖8(a)〜（e)來作具體 說明。 -5- 201200830 例如，在圖8 ( a )中’係在玻璃基板G上，依序層積 閘極電極200、絕緣層201、由a-Si層（無摻雜非晶質Si層 )202a和n+ a-Si層202b (磷摻雜非晶質Si層）所成之Si層 2 02、用以形成電極之金屬層203。 又’在金屬層2 05上’係被形成有藉由前述半曝光處 理以及顯像處理所得到之光阻圖案R。 在此光阻圖案R(厚膜部R1以及薄膜部R2)之形成後 ，如圖8(b)中所示一般，將此光阻圖案R作爲遮罩，而 進行金屬膜之蝕刻（第1次蝕刻）。 接著，對於光阻圖案R全體，而在電漿中施加灰化處 理。藉由此，如圖8 ( c )中所示一般，係得到將膜厚作了 一半左右的減膜之光阻圖案R3。 之後，如圖8(d)中所示一般，將此光阻圖案R3作爲 遮罩來利用，並對於露出之金屬膜203或者是Si層202而進 行触刻（第2次蝕刻），最後，如同圖8 ( e )中所示一般 ，藉由將光阻R3除去而得到電路圖案。 另外，在用以形成前述光阻圖案R之半曝光處理的前 段工程中，係在對於基板面之光阻液的塗布處理後，進行 有將被作了塗布的光阻膜在減壓環境下而乾燥之減壓乾燥 處理。 在此減壓乾燥處理中，係將被塗布有光阻液之基板收 容於腔內，並將腔內減壓至光阻液中之溶劑的蒸氣壓，而 在特定時間之間，藉由使光阻中之溶劑蒸發，來進行乾燥 處理。 -6 - 201200830 等的塗布液作 有所揭示。 同在先前技術 始時便將腔內 丨9之測定結果 (25秒附近） 性造成不良影 由半曝光處理 案R，並對其 況時，在作爲 ，會由於前述 另外，關於將被塗布於基板上之光阻液 減壓乾燥之減壓乾燥裝置，係於專利文獻〗中 [先前技術文獻] [專利文獻] [專利文獻1]日本特開2004-47797號公報 【發明內容】 [發明所欲解決之課題] 然而，本發明者們，係發現了 ：若是如 中所進行之減壓乾燥處理一般地而於其之開 之壓力一直減壓至溶劑之蒸氣壓，則如同圖 所示一般，溶劑會從光阻膜而突沸性地蒸發 ，而此事會對於減壓乾燥後之光阻膜的均一 響。 進而，亦得知了：當如同前述一般而經 來形成具有厚膜部R1以及薄膜部R2之光阻圖 如同圖8 ( c ) —般地而進行了灰化處理的情 殘留膜所得到之光阻圖案R3 (圖8 ( c ))中 光阻膜之不均一性而產生偏差。 具體而言，在基板面內，係會混合存在有如圖l〇(a )中所示一般之殘留膜圖案的膜厚、線寬幅過小之部分和 如圖10(b)中所示一般之過大之部分，而此會成爲問題 201200830 本發明，係爲有鑑於上述一般之先前技術的問題點所 進行者，其目的，係在於提供一種：在對於被形成在被處 理基板上之塗布膜而施加乾燥處理之減壓乾燥裝置中，能 夠將乾燥處理後之塗布膜的面內均一性提升，並且能夠將 在配線圖案形成過程中之前述塗布膜的殘留膜厚以及線寬 幅之均一性提升的減壓乾燥方法及減壓乾燥裝置。 [用以解決課題之手段] 爲了解決前述課題，本發明之減壓乾燥方法，係爲將 被形成有塗布膜之被處理基板置於減壓環境下並使前述塗 布膜中之溶劑蒸發而施加前述塗布膜的乾燥處理之減壓乾 燥方法，其特徵爲：在將被形成有塗布膜之前述基板收容 在腔中並且將前述腔內設爲減壓環境之工程中，係包含有 :將前述腔內之壓力以第1減壓速度來減壓，並設爲較前 述溶劑之蒸氣壓更高而至少不會使前述溶劑突沸性地蒸發 的第1壓力値之步驟；和從前述第1壓力値起，以較前述第 1減壓速度更低之第2減壓速度來緩慢地減壓，直到至少成 爲前述溶劑的蒸氣壓爲止之步驟。 另外，較理想，在將前述腔內之壓力設爲前述溶劑的 蒸氣壓之步驟後，係更進而實施：以前述第2減壓速度來 減壓，並設爲較前述溶劑之蒸氣壓更低的第2壓力値之步 驟。 若依據此種方法，則係從腔內之壓力爲較溶劑之蒸氣 壓更高的至少不會使前述溶劑突沸性地蒸發之第1壓力値 -8- 201200830 的時間點起，來以更低速度之平緩的第2減壓速度進行減 壓。 藉由此控制，在基板面附近之壓力値，係會無偏差地 而維持面內均一之狀態並緩慢地減壓’並到達溶劑之蒸氣 壓。 其結果，從塗布膜而來之溶劑的突沸性蒸發係被抑制 ，而能夠進行低速度下之溶劑的蒸發，並能夠將光阻之乾 燥狀態設爲均一。 又，藉由使光阻之乾燥狀態成爲均一，係能夠將例如 在使用有半曝光處理的情況時之配線圖案形成過程中的圖 案殘留膜厚以及線寬幅之均一性提升。 又，爲了解決前述課題，本發明之減壓乾燥裝置，係 爲將被形成有塗布膜之被處理基板置於減壓環境下並使前 述塗布膜中之溶劑蒸發而施加前述塗布膜的乾燥處理之減 壓乾燥裝置，其特徵爲，具備有：腔，係收容被形成有塗 布膜之前述基板；排氣手段，係將前述腔內排氣；排氣量 調整手段，係對於前述腔之排氣量作調整；壓力檢測手段 ，係檢測出前述腔內之壓力；和控制手段，係根據前述壓 力檢測手段之檢測結果，而對於由前述排氣量調整手段所 致之排氣調整量作控制，前述控制手段，係以將前述腔內 之壓力以第1減壓速度來減壓，並設爲較前述溶劑之蒸氣 壓更高而至少不會使前述溶劑突沸性地蒸發之第1壓力値 的方式’來控制前述排氣量調整手段，並且，以從前述第 1壓力値起’以較前述第1減壓速度更低之第2減壓速度來 -9 - 201200830 緩慢地減壓，直到至少成爲前述溶劑的蒸氣壓爲止的方式 ，來控制前述排氣量調整手段。 另外，較理想，前述控制手段，係以將前述腔內之壓 力藉由前述第2減壓速度來緩慢地減壓至較前述溶劑之蒸 氣壓更低之第2壓力値的方式，來控制前述排氣量調整手 段。 若依據此種構成，則從塗布膜而來之溶劑的突沸性蒸 發係被抑制，而能夠進行低速度下之溶劑的蒸發，並能夠 將光阻之乾燥狀態設爲均一》 又，藉由使光阻之乾燥狀態成爲均一，係能夠將例如 在使用有半曝光處理的情況時之配線圖案形成過程中的圖 案殘留膜厚以及線寬幅之均一性提升。 [發明之效果] 若依據本發明，則能夠得到一種：在對於被形成在被 處理基板上之塗布膜而施加乾燥處理之減壓乾燥裝置中， 能夠將乾燥處理後之塗布膜的面內均一性提升，並且能夠 將在配線圖案形成過程中之前述塗布膜的殘留膜厚以及線 寬幅之均一性提升之減壓乾燥方法及減壓乾燥裝置。 【實施方式】 以下，根據圖1乃至圖3，針對本發明之減壓乾燥方法 及減壓乾燥裝置的其中一種實施形態作說明。 如圖1中所示一般，此減壓乾燥裝置1，係具備有用以 -10- 201200830 將其之內部空間維持爲氣密的腔2，此腔2，係具備有下部 腔2a和以將其之上方作覆蓋的方式而可升降移動地作設置 之上部腔2b。 在下部腔2a處，係被設置有用以將身爲被處理基板之 玻璃基板G作載置的平台4，此平台4，係爲了使基板之搬 入搬出成爲容易’而經由可升降之軸6來支持。在平台4上 ，係被設置有用以載置基板G之複數的固定銷5，此些之複 數的固定銷5，係在平台4上被作分散配置。另外，此固定 銷5，較理想，係藉由與基板G實質上相同之材質（在本實 施形態中，係爲玻璃）來形成。 又，在下部腔2a之各角隅部處，係被設置有4個的排 氣口 10(在圖1中，係展示有其中2個）。在各排氣口 10處 ，係通連有排氣管1 1，排氣管1 1係被與排氣幫浦1 7 (排氣 手段）作連接。亦即是，係構成爲：在下部腔2a之處密著 有上部腔2b，腔2內係被設爲氣密狀態，藉由以排氣幫浦 17來透過排氣管11而進行排氣，腔2內係被減壓並被設爲 特定之真空狀態。 在排氣管11之途中，係被設置有流量調整閥15 (排氣 量調整手段）和主閥1 6。前述流量調整閥1 5，係經由由電 腦所成之控制部20來對於其之閥開度作控制，並因應於此 開度來決定腔2內之排氣量。 又，在排氣管11處，係被設置有用以進行腔2內之壓 力檢測的壓力檢測部1 8 (壓力檢測手段），控制部20，係 設爲根據壓力檢測部1 8之檢測結果來設定流量調整閥1 5之 -11 - 201200830 閥開度。 又’控制部20，係爲了依據一定之控制來進行腔2內 之減壓’而記億有特定之控制程式，在減壓乾燥處理之開 始時’係構成爲實行此控制程式。 另外，此控制程式，係構成爲以如圖3中所示一般地 伴隨著時間經過而使腔2內之壓力變化的方式來進行控制 。又’在此圖3中，於以實線所示之壓力線處，係設爲作 直線性之壓力變化者，但是，係並不被限定於此，亦可如 同以一點錬線所示一般地而進行曲線性地變化之控制。 接著，針對使用有前述控制程式之減壓乾燥處理作說 明。 在前段工程中，若是在基板G之被處理面上被塗布有 身爲塗布液之光阻液，則前述基板G係被搬入至減壓乾燥 裝置1中，並被載置於平台4上。 又，係相對於下部腔2a而使上部腔2b作閉合，並將基 板G收容在氣密狀態之腔2內（圖2之步驟S1)。 若是腔2內被設爲氣密狀態，則驅動排氣幫浦1 7，並 且開啓主閥1 6，而從圖3之時間點t0起開始腔2內之排氣。 於此，首先，控制部20，係經由調整流量調整閥15之 開度，來如圖3中所示一般地以第1減壓速度vl來將腔2內 減壓，並將腔2內之壓力設爲較光阻液之溶劑（例如 PGMEA )之蒸氣壓Pe更高的第1壓力値P1 (例如，在圖3的 時間點tl處，係爲400Pa )(圖2之步驟S2 )。另外，此第 1壓力値P 1，係較溶劑會突沸性地蒸發之壓力値更高，而 -12- 201200830 不會有使前述溶劑突沸性地蒸發的情況 有溶劑完全不蒸發的情況以及有些許蒸 圖5之3 0秒附近之蒸發速度的情況）之 之所謂溶劑的蒸氣壓，係代表在減壓環 〇 若是腔2內之壓力到達第1壓力値P1 流量調整閥1 5之開度朝向閉方向來調整 減少，來以較前述第1減壓速度vl更慢；^ 緩慢地進行減壓（圖2之步驟S3)。 由此第2減壓速度v2所進行之緩慢 圖3中所示一般，從第1壓力値P1之時間 2壓力値P2 (例如250Pa )之時間點t3爲 行。201200830 VI. Description of the Invention: [Technical Field] The present invention relates to placing a substrate to be treated coated with a coating liquid under a reduced pressure environment, thereby applying dryness to a coating film on the substrate The reduced pressure drying method and the reduced pressure drying device. [Prior Art] For example, in the manufacture of F P D (flat panel display), a circuit pattern is formed by so-called photolithography. The aforementioned photolithography project is specifically carried out as follows. First, a specific film is formed on a substrate to be processed such as a glass substrate, and then a photoresist as a coating liquid is applied to form a photoresist film. Then, the photoresist film is exposed corresponding to the circuit pattern, and then subjected to development processing. In such a photolithography project, as shown in FIG. 8(a), the photoresist pattern R is made to have a different film thickness (thick film portion R1 and film portion R2), and is utilized. The etching process is performed plural times, whereby the number of masks and the number of projects can be reduced. Further, such a resist pattern R can be obtained by using a half (halftone) exposure process in which a halftone mask having a portion having a different transmittance of light is provided in one piece. It. The circuit pattern forming process in the case where the photoresist pattern R to which this half exposure is applied is used will be specifically described using Figs. 8(a) to 8(e). -5-201200830 For example, in FIG. 8(a), 'on the glass substrate G, the gate electrode 200, the insulating layer 201, and the a-Si layer (undoped amorphous Si layer) 202a are sequentially laminated. And a Si layer 102 formed of an n+ a-Si layer 202b (phosphorus-doped amorphous Si layer), a metal layer 203 for forming an electrode. Further, on the metal layer 205, a photoresist pattern R obtained by the above-described half exposure processing and development processing is formed. After the formation of the photoresist pattern R (the thick film portion R1 and the thin film portion R2), as shown in FIG. 8(b), the photoresist pattern R is used as a mask to perform etching of the metal film (first Secondary etching). Next, for the entire photoresist pattern R, an ashing treatment is applied to the plasma. Thereby, as shown in Fig. 8 (c), a photoresist pattern R3 having a film thickness of about half is obtained. Thereafter, as shown in FIG. 8(d), the photoresist pattern R3 is used as a mask, and the exposed metal film 203 or the Si layer 202 is subjected to etch (second etching). Finally, As shown in Fig. 8(e), the circuit pattern is obtained by removing the photoresist R3. In addition, in the front stage of the half exposure process for forming the photoresist pattern R, after the coating process on the photoresist film on the substrate surface, the photoresist film to be coated is subjected to a reduced pressure environment. Drying is dried under reduced pressure. In the vacuum drying process, the substrate coated with the photoresist is housed in the chamber, and the chamber is decompressed to the vapor pressure of the solvent in the photoresist, and between specific times, by The solvent in the photoresist evaporates for drying. The coating liquid of -6 - 201200830 is disclosed. At the beginning of the prior art, the measurement result of the intracavity 丨9 (near 25 seconds) is caused by the half-exposure treatment case R, and when it is used, it will be applied to A vacuum drying apparatus for drying a photoresist liquid on a substrate is a patent document. [Prior Art Document] [Patent Document] [Patent Document 1] JP-A-2004-47797 [Invention] [Invention] Problem to be Solved] However, the inventors have found that, if the vacuum drying treatment as described herein is generally performed, the pressure at which it is opened is always reduced to the vapor pressure of the solvent, as shown in the figure. The solvent will evaporate from the photoresist film, and the matter will be uniform for the photoresist film after drying under reduced pressure. Further, it is also known that, when the photoresist pattern having the thick film portion R1 and the thin film portion R2 is formed as described above, the residual film is ash-treated as in the case of Fig. 8(c). The unevenness of the photoresist film in the photoresist pattern R3 (Fig. 8 (c)) varies. Specifically, in the plane of the substrate, the film thickness of the residual film pattern as shown in FIG. 3(a), the portion where the line width is too small, and the portion as shown in FIG. 10(b) are mixed. Excessive portion, and this will become a problem. The present invention is directed to the above-mentioned general prior art problems, and an object thereof is to provide a coating film for a substrate to be processed. In the vacuum drying apparatus to which the drying treatment is applied, the in-plane uniformity of the coating film after the drying treatment can be improved, and the uniform film thickness and uniformity of the line width of the coating film during the formation of the wiring pattern can be improved. Vacuum drying method and vacuum drying device. [Means for Solving the Problems] In order to solve the above problems, the vacuum drying method of the present invention is to apply a substrate to be processed having a coating film formed therein under a reduced pressure atmosphere and evaporate a solvent in the coating film. The method for drying a drying process of the coating film, characterized in that the substrate in which the coating film is formed is housed in a cavity and the inside of the cavity is a reduced pressure environment includes: a step of decompressing the pressure in the chamber at a first decompression speed and setting a first pressure enthalpy which is higher than a vapor pressure of the solvent and at least does not cause the solvent to evaporate boilingly; and from the first pressure The step of slowly lowering the pressure at a second decompression speed lower than the first decompression speed until at least the vapor pressure of the solvent is reached. Further, preferably, after the step of setting the pressure in the chamber to the vapor pressure of the solvent, the pressure is further reduced at the second decompression rate, and the vapor pressure is lower than the solvent. The second pressure step. According to this method, the pressure from the chamber is higher than the vapor pressure of the solvent, at least from the point of time when the first pressure 値-8-201200830 does not cause the solvent to evaporate boil. The second decompression speed at a gentle speed is reduced. By this control, the pressure enthalpy in the vicinity of the substrate surface maintains the in-plane uniform state without any deviation and slowly decompresses and reaches the vapor pressure of the solvent. As a result, the boiling out evaporation of the solvent from the coating film is suppressed, and evaporation of the solvent at a low speed can be performed, and the dry state of the photoresist can be made uniform. Further, by making the dry state of the photoresist uniform, it is possible to improve the uniformity of the pattern residual film thickness and the line width in the wiring pattern formation process, for example, in the case where the half exposure process is used. In order to solve the above problems, the vacuum drying apparatus of the present invention is a drying treatment in which a substrate to be treated having a coating film is placed in a reduced pressure atmosphere and a solvent in the coating film is evaporated to apply the coating film. The vacuum drying apparatus includes a chamber for accommodating the substrate on which a coating film is formed, an exhausting means for exhausting the inside of the chamber, and an exhaust gas amount adjusting means for arranging the chamber The gas volume is adjusted; the pressure detecting means detects the pressure in the cavity; and the control means controls the exhaust gas adjustment amount caused by the exhaust gas amount adjusting means according to the detection result of the pressure detecting means The control means is configured to reduce the pressure in the chamber at a first decompression speed and to set the first pressure 更高 which is higher than the vapor pressure of the solvent and at least does not cause the solvent to evaporate. The method of controlling the above-described exhaust gas amount adjusting means, and slowly rising from the first pressure 'below the second decompression speed lower than the first decompression speed -9 - 201200830 Pressure, until at least the vapor pressure of the solvent becomes far way to control the displacement of the adjusting means. Further, preferably, the control means controls the pressure in the chamber to be gradually reduced to a second pressure 更低 which is lower than a vapor pressure of the solvent by the second decompression speed. The amount of exhaust gas adjustment means. According to this configuration, the boiling out evaporation of the solvent from the coating film is suppressed, and evaporation of the solvent at a low speed can be performed, and the dry state of the photoresist can be made uniform, and The dry state of the photoresist is uniform, and it is possible to improve the uniformity of the pattern residual film thickness and the line width in the wiring pattern formation process, for example, in the case where the half exposure process is used. [Effects of the Invention] According to the present invention, it is possible to obtain an in-plane uniformity of a coating film after drying treatment in a vacuum drying apparatus that applies a drying treatment to a coating film formed on a substrate to be processed. A vacuum drying method and a vacuum drying apparatus capable of improving the residual film thickness and uniformity of the line width of the coating film in the formation of the wiring pattern during the wiring pattern formation. [Embodiment] Hereinafter, one embodiment of the reduced-pressure drying method and the reduced-pressure drying apparatus of the present invention will be described with reference to Figs. 1 to 3 . As shown in Fig. 1, in general, the vacuum drying apparatus 1 is provided with a chamber 2 for maintaining its internal space to be airtight with -10-201200830, which is provided with a lower chamber 2a and to be The upper chamber 2b is disposed to be lifted and lowered in a manner of covering the upper side. In the lower chamber 2a, a platform 4 for mounting the glass substrate G as a substrate to be processed is provided, and the stage 4 is made easy to carry in and out of the substrate. stand by. On the stage 4, a plurality of fixing pins 5 for mounting the substrate G are provided, and the plurality of fixing pins 5 are arranged on the stage 4 in a distributed manner. Further, the fixing pin 5 is preferably formed of a material substantially the same as the substrate G (in the present embodiment, glass). Further, at each corner portion of the lower chamber 2a, four exhaust ports 10 are provided (in Fig. 1, two of them are shown). At each of the exhaust ports 10, an exhaust pipe 1 is connected, and the exhaust pipe 11 is connected to an exhaust pump 17 (exhaust means). In other words, the upper chamber 2b is adhered to the lower chamber 2a, and the chamber 2 is airtight, and is exhausted through the exhaust pipe 11 by the exhaust pump 17. The chamber 2 is decompressed and set to a specific vacuum state. In the middle of the exhaust pipe 11, a flow rate adjusting valve 15 (discharge amount adjusting means) and a main valve 16 are provided. The flow rate adjusting valve 15 controls the valve opening degree via the control unit 20 formed by the computer, and determines the amount of exhaust gas in the chamber 2 in response to the opening degree. Further, a pressure detecting unit 18 (pressure detecting means) for detecting the pressure in the chamber 2 is provided in the exhaust pipe 11, and the control unit 20 is based on the detection result of the pressure detecting unit 18. Set the flow adjustment valve 1 5-11 - 201200830 Valve opening. Further, the control unit 20 is configured to execute the control program at the start of the decompression drying process in order to perform the decompression in the cavity 2 in accordance with a constant control. Further, this control program is configured to be controlled in such a manner as to change the pressure in the chamber 2 generally as time elapses as shown in Fig. 3. Further, in this FIG. 3, the pressure line indicated by the solid line is set as the linear pressure changer, but it is not limited thereto, and may be as shown by a single line. Ground control is performed in a curved manner. Next, a description will be given of a vacuum drying process using the aforementioned control program. In the front stage, if the photoresist liquid as the coating liquid is applied to the surface to be processed of the substrate G, the substrate G is carried into the vacuum drying apparatus 1 and placed on the stage 4. Further, the upper chamber 2b is closed with respect to the lower chamber 2a, and the substrate G is housed in the airtight state chamber 2 (step S1 of Fig. 2). If the chamber 2 is in an airtight state, the exhaust pump 17 is driven and the main valve 16 is opened, and the exhaust in the chamber 2 is started from the time point t0 of Fig. 3. Here, first, the control unit 20 adjusts the opening degree of the flow rate adjusting valve 15 to decompress the inside of the chamber 2 at the first decompression speed v1 as shown in FIG. 3, and the chamber 2 is decompressed. The pressure is set to a first pressure 値P1 higher than the vapor pressure Pe of the solvent of the photoresist (for example, PGMEA) (for example, 400 Pa at the time point t1 of Fig. 3) (step S2 of Fig. 2). Further, the first pressure 値P 1 is higher than the pressure 蒸发 which evaporates in a sudden boiling manner, and -12-201200830 does not cause the solvent to evaporate in abrupt manner, and the solvent does not evaporate at all and some The vapor pressure of the solvent in the case of the vaporization rate in the vicinity of the zero-throw of Fig. 5 is represented by the pressure in the pressure-reducing ring. If the pressure in the chamber 2 reaches the first pressure 値 P1, the opening of the flow regulating valve 15 The adjustment is reduced toward the closing direction to be slower than the first decompression speed v1; and the pressure is gradually reduced (step S3 of Fig. 2). Thus, the second decompression speed v2 is slow. As shown in Fig. 3, generally, the time point t3 from the time 2P2 (e.g., 250 Pa) of the first pressure 値P1 is a line.
另外，前述第2壓力値P2，係爲較 壓Pe更低之値，而爲在藉由前述第2減 持續進行減壓的情況時，光阻中之溶劑 間點t3處之壓力値。前述第1壓力値P 1、 因應於溶劑之種類等的各條件來預先作I 於此，控制部20，係在將腔2內之屢 起而減壓至第2壓力値P2爲止的期間中 18之檢測結果，來對於腔2內之減壓速g 減壓速度v2附近（特定範圍內）一事作 S4 ) ° 而後，當腔2內之減壓速度爲較特 ，例如，係爲包含 發的情況（例如， 壓力値。又，於此 境下之蒸氣壓的値 ，則控制部20係將 ，並經由使排氣量 L第2減壓速度v2而 的減壓控制，係如 點11起直到成爲第 止的期間中而被進 光阻之溶劑的蒸氣 壓速度v2來緩慢地 的蒸發結束了的時 第2壓力値P2，係 没定。 I力從第1壓力値P 1 ，根據壓力檢測部 I是否成爲前述第2 :監視（圖2之步驟 定範圍更小的情況 -13- 201200830 時（圖2之步驟S 5 )，係以使排氣流量增加的方式來將流 量調整閥15之開度增大（圖2之步驟S6)。另一方面，當 腔2內之減壓速度爲較特定範圍更大的情況時（圖2之步驟 S 5 )，係以使排氣流量減少的方式來將流量調整閥1 5之開 度縮小（圖2之步驟S 7 )。 又，如圖3中所示一般，當將腔2內之壓力從第1壓力 値P 1來緩慢地減壓至第2壓力値P2的期間中之時間點t2處 ，腔2內之壓力係到達溶劑之蒸氣壓Pe。 因此，從腔2內之壓力緩慢地到達蒸氣壓Pe的時間點 t2的略之前起，溶劑之蒸發係（無突沸狀態地）以低速度 開始，進而，在直到到達第2壓力P2爲止的期間中，係耗 費較長時間地來以安定之蒸發速度而進行溶劑之蒸發。 而後，若是腔2內之壓力被減壓至第2壓力値P2(圖2 之步驟S 8 )，則光阻中之溶劑的蒸發係略結束，控制部20 係停止排氣幫浦17之驅動，並結束減壓乾燥處理（圖2之 步驟S 9 )。 如同上述一般，若依據本發明之實施形態，則係從腔 2內之壓力爲較光阻之溶劑之蒸氣壓更高的至少不會使前 述溶劑突沸性地蒸發之第1壓力値P 1的時間點11起，來以 更低速度之平緩的第2減壓速度v2進行減壓。 藉由此控制，在基板面附近之壓力，係會無偏差地而 維持面內均一之狀態並緩慢地減壓，並到達溶劑之蒸氣壓 〇 其結果，從光阻膜而來之溶劑的突沸性蒸發係被抑制 -14- 201200830 ，而能夠進行低速度下之溶劑的蒸發’並能夠將光阻之乾 燥狀態設爲均一。 又，藉由使光阻之乾燥狀態成爲均一’係能夠將例如 在使用有半曝光處理的情況時之配線圖案形成過程中的光 阻圖案之殘留膜厚以及線寬幅之均一性提升。 另外，在前述實施形態中，作爲在減壓乾燥裝置1中 之排氣量調整手段，雖係設置流量調整閥15，並藉由對於 其之開度作調整而進行腔2之排氣量的控制，但是，在本 發明中，係並不被限定於該構成。 例如，亦可設爲下述之構成：亦即是，代替流量調整 閥15，而設置使空氣流入至排氣管11內之空氣導入手段（ 未圖示），並藉由對於其之空氣導入量作調整，來進行排 氣量之控制。 又，如同使用圖3所作了說明一般，在壓力控制中， 雖係設爲設定第1壓力値P1和第2壓力値P2，並對於直到到 達該些之壓力値爲止的減壓速度作控制，但是，亦可更進 而增加壓力値之設定數量，來更精細地對於減壓速度作控 制。 例如，亦可如圖3中所示一般，在第1壓力値P 1之附近 更進而追加第3壓力値P3、第4壓力値P4，並對於直到到達 第1壓力値P 1爲止的減壓控制作更精細之控制。又，例如 ’亦可在第1氣壓値P1和第2氣壓値P2之間，設置第5氣壓 値P5、第6氣壓値P6，並將在蒸氣壓pe附近之減壓控制作 更精細的控制。 -15- 201200830 又，在前述實施形態中，於腔2內，係設爲將基板G載 置在平台4上之構成，但是，係並不被限定於該構成，例 如，亦可設爲載置在支持銷或者是搬送滾筒上之構成。 [實施例] 接著，根據實施例，針對本發明之塗布膜形成方向以 及塗布膜形成裝置更進一步作說明。 〔實施例1-4〕 在實施例1 -4中，係將被塗布了光阻之玻璃基板收容 在氣密狀態之腔內，並從減壓至了與前述實施形態中之第 1壓力値P1相當的壓力値（400Pa )的狀態起，耗費特定時 間地來減壓至相當於第2壓力値P2之特定的壓力値。而後 ，在從400Pa起而減壓至第2壓力値P2爲止的期間中，對於 溶劑之蒸發速度作了何種變化一事作檢驗。 另外，在光阻中，係使用AZ-SR210 ( AZ公司），在 溶劑中，係使用PGMEA，光阻膜之塗布膜厚，係設爲1>5 β m。 又，對於相當於前述第2壓力値P2之壓力値，在實施 例1中係設爲25〇Pa、在實施例2中係設爲2〇OPa、在實施例 3中係設爲150Pa、在實施例4中係設爲lOOPa。 於圖4中，對於各實施例I-4中之腔內的壓力變化作展 示。又，於圖5中，對於此時之光阻溶劑的蒸發速度之變 化作展示。 -16- 201200830 從圖5，可以確認到，在減壓速度最爲平緩之實施例i (400Pa— 2 5 0Pa)的情況時，溶劑之蒸發速度的變化係爲 最少，並且亦未發生突沸性之蒸發，因此，係爲理想。 〔實施例5-7〕 在實施例5-7中，係將相當於前述實施形態中之第1壓 力値P1的壓力値，設爲400Pa，並將相當於第2壓力値P2之 特定的壓力値，設爲2 5 0Pa，而對依存於從400Pa來減壓至 2 5 OP a爲止的時間會導致溶劑之蒸發速度作何種的變化一 事作了檢討。 另外，光阻、溶劑以及塗布膜厚，係設爲與實施例1 -4相同。 又，從400Pa起而減壓至25〇Pa爲止的時間，在實施例 5中係設爲35秒、在實施例6中係設爲25秒、在實施例7中 係設爲15秒。 於圖6中，對於各實施例5-7中之腔內的壓力變化作展 示。又，於圖7中，對於此時之光阻溶劑的蒸發速度之變 化作展示。 從圖7，可以確認到，在最爲耗費時間的減壓速度爲 平緩之實施例5的情況時，溶劑之蒸發速度的變化係爲最 少，並且亦未發生突沸性之蒸發，因此，係爲理想。. 由以上之實施例1 - 7的結果’可以確認到：經由從至 少不會使光阻液之溶劑突沸性地蒸發之第1壓力値P 1起來 耗費較長時間地而緩慢進行減壓’從光阻膜而來之溶劑的 -17- 201200830 突沸性之蒸發係被抑制，而能夠進行低速度下之溶劑的蒸 發。 〔實施例8〕 在實施例8中，係將相當於前述實施形態中之第1壓力 値P1的壓力値，設爲400Pa，並將相當於第2壓力値P2之特 定的壓力値，設爲250Pa，而從400Pa來減壓至250Pa。 使用經由其結果所得到的光阻膜來進行半曝光處理， 並針對所得到的光阻圖案之圖案線寬幅以及殘留膜厚，而 在基板面內之25個點處來進行測定，並求取出變動幅度（ 偏差）。又，在各測定點處，係測定出光阻圖案剖面之錐 狀角度（相對於基板面之傾斜角：圖8(c)中所示之0角 )，並求取出該些之平均値。 又’作爲比較例1，針對藉由先前技術之減壓乾燥方 法（亦即是，將腔內急遽地減壓至光阻之溶劑的蒸氣壓， 並經由維持該壓力來進行乾燥處理）而進行了乾燥處理的 基板’與實施例8相同的而求取出了變動幅度以及錐狀角 度。 另外’在實施例8以及比較例1中，於光阻中，係使用 AZ-SR210，在溶劑中，係使用PGMEA，光阻膜之塗布膜 厚，係設爲2.2//m。 於表1中，對於實施例8以及比較例1之結果作展示。 -18- 201200830 [表i] 殘留膜厚(ym) 線寬幅(㈣） 錐狀角度(。） 實施例8 0.37 0.67 60.19 比較例1 0.63 1.09 81.81 如表1中所示一般’若依據適用有本發明之減壓乾燥 方法的實施例8 ’則相較於適用有先前技術之方法的比較 例1之結果，在光阻圖案之殘留膜厚、線寬幅中，變動幅 度（偏差）均係降低’而確認到，相較於先前技術，基板 面內之均一性係被提升。 又，關於錐狀角度，相較於比較例1，實施例8係更爲 變小’由此檢討結果，可以確認到，藉由對於第1壓力値 p 1〜蒸氣壓P e之斜率（蒸發速度）作控制，係能夠任意地 控制光阻圖案之錐狀角度。 接著，針對本發明之第2實施形態作說明。在本實施 形態中，將腔2內減壓時之步驟，係與前述之實施形態1有 部分相異。另外，針對與前述實施形態相同之部分，係省 略其說明。 如圖1 1中所示一般，若是腔2內被設爲氣密狀態，則 係驅動排氣幫浦17，並且將主閥16開啓。而後’控制部2〇 係對於流量調整閥1 5之開度作調整，並從圖1 2之時間點t0 起來開始腔2內之排氣。之後，藉由較前述第1減壓速度vl. 而更慢之第3減壓速度v3來進行減壓’直到到達特定之第 1 0壓力値P 1 0 (例如，在圖1 2之時間點11 0處的7 〇 〇 〇 〇 P a ) 爲止（圖11之步驟S10)。另外，此時之減壓速度v3，係 -19- 201200830 爲不會使被塗布在基板G上之光阻液突沸的減壓速度，此 係爲了防止由於突沸而造成光阻液之表面變得粗糙之故。 若是腔2內之壓力到達壓力値P 1 0，則控制部20係將流 量調整閥1 5之開度朝向開方向來調整，並經由使排氣量增 加’來以前述第1減壓速度v 1進行減壓，並減壓至到達前 述第1壓力値P1 (例如，在圖12之時間點tl處而爲400Pa) 爲止。（圖11之步驟S2) 若是腔2內之壓力到達第1壓力値P 1，則控制部20係將 流量調整閥1 5之開度朝向閉方向來調整，並經由使排氣量 減少，來以較前述第1減壓速度vl更慢之前述第2減壓速度 v2而緩慢地進行減壓（圖11之步驟S3)。 由此第2減壓速度v2所進行之緩慢的減壓控制，係如 圖1 2中所示一般，從第1壓力値P 1之時間點11起直到成爲 特定之第1 1壓力値P 1 1 (例如3 5 OP a )之時間點11 1爲止的 期間中而被進行。另外，壓力値P11，係爲較光阻之溶劑 的蒸氣壓Pe更低之値，並爲較前述第2壓力値P2更高之値 。於此，壓力値P11，係因應於溶劑之種類等的各條件而 預先被設定。 於此，控制部20，係在將腔2內之壓力從第1壓力値P1 起而減壓至壓力値P 1 1爲止的期間中，根據壓力檢測部1 8 之檢測結果，來對於腔2內之減壓速度是否成爲前述第2減 壓速度v2附近（特定範圍內）一事作監視（圖11之步驟S4 )° 而後，當腔2內之減壓速度爲較特定範圍更小的情況 -20- 201200830 時量腔驟 流當 將’ 來面 式方 方一 的另 加。 增} 量S6 流驟 氣步 排之 5 1 儐 1 以圖 係 C ’ 大 } 增 S5度 驟開 步之 κ 1 5 之 1 11閥 圖整 ✓fv 周 特 較 爲 度 速 壓 減 之 內 量 流 氣 .111 使 以 係 步之 L 5 之 1 11閥 圖整 ( 調 時量 況流 情將 的來 大式 更方 圍的 範少 定減 開度縮小（圖II之步驟S7)。 又，如圖12中所示一般，當將腔2內之壓力從第1壓力 値P 1來緩慢地減壓至壓力値P 1 1的期間中之時間點t2處， 腔2內之壓力係到達溶劑之蒸氣壓Pe。 因此，從腔2內之壓力緩慢地到達蒸氣壓p e的時間點 t2的略之前起，溶劑之蒸發係（無突沸狀態地）以低速度 開始，進而，在直到到達壓力値P 1 1爲止的期間中，係耗 費較長時間地來以安定之蒸發速度而進行溶劑之蒸發。 而後，若是腔2內之壓力被減壓至壓力値P11 (圖11之 步驟S 1 1 )，則係以使排氣流量增加的方式來將流量調節 閥15之開度增大，並藉由較第2減壓速度v2更大之第4減壓 速度v4來減壓至前述第2壓力値P2爲止（圖11之步驟S12) 。另外，在時間點11 1處，光阻之表面係爲略乾燥，就算 是將減壓速度從v2而增大至v4，亦不會產生處理上的問題 〇 而後，若是腔2內之壓力被減壓至第2壓力値P2，則光 阻中之溶劑的蒸發係略結束，控制部20係停止排氣幫浦1 7 之驅動，並結束減壓乾燥處理（圖2之步驟S13)。 如同上述一般，若依據本發明之第2實施形態，則由 於除了前述實施形態之效果以外，亦能夠防止減壓開始時 -21 - 201200830 之突沸，因此，係能夠防止光阻膜之表面變粗，並且，從 壓力値P11起直到壓力値P2爲止，由於係藉由較減壓速度 v2更大之減壓速度v4來更進而作減壓，因此，係能夠以較 前述實施形態更短的時間來結束處理。 另外，在第2實施形態之步驟S10中，亦可與圖11之步 驟S4、步驟S5、步驟S6、步驟S7、步驟S11相同的而藉由 第3減壓速度v3來控制排氣動作，直到到達壓力値P10爲止 ，又，在步驟S12中，亦可同樣的藉由第4減壓速度v4來控 制排氣動作，直到到達壓力値P2爲止。 【圖式簡單說明】 [圖1]圖1，係爲對於本發明之其中一種實施形態的全 體槪略構成作展示之剖面圖。 [圖2]圖2，係爲對於本發明之其中一種實施形態的動 作作展示之流程圖。 [圖3]圖3，係爲對於本發明之其中一種實施形態中的 腔內之減壓控制作展示之圖表。 [圖4]圖4，係爲對於本發明之實施例1〜4中的腔內之 壓力變化作展示之圖表。 [圖5]圖5，係爲對於本發明之實施例1〜4中的光阻之 溶劑的蒸發速度之變化作展示之圖表。 [圖6]圖6，係爲對於本發明之實施例5〜7中的腔內之 壓力變化作展示之圖表。 [圖7]圖7，係爲對於本發明之實施例5〜7中的光阻之 -22- 201200830 溶劑的蒸發速度之變化作展示之圖表。 [圖8]圖8(a)〜（e)，係爲用以對於使用有半曝光 處理之配線圖案的一連串之形成工程作說明的剖面圖。 [圖9]圖9，係爲當使用有先前技術之減壓乾燥方法的 情況時之測定結果，並爲對於腔內之壓力變化以及光阻之 溶劑的蒸發速度之變化作展示之圖表。 [圖10]圖10(a) 、 （b)，係爲用以對於使用有半曝 光處理之配線圖案的形成工程中之光阻圖案殘留膜的偏差 作說明之剖面圖。 [圖1 1 ]圖1 1，係爲對於本發明之第2實施形態的動作作 展示之流程圖。 [圖12]圖12，係爲對於本發明之第2實施形態中的腔內 之減壓控制作展示之圖表。 【主要元件符號說明】 1 :減壓乾燥裝置 2 :腔 2a :下部腔 2b :上部腔 4 :平台 5 :固定銷 6 :升降軸 1 〇 :排氣口 1 1 :排氣管 -23- 201200830 1 5 :流量調整閥（排氣量調整手段） 1 6 :主閥 1 7 :排氣幫浦（排氣手段） 2 0 :控制部 G:玻璃基板（被處理基板） P 1 :第1壓力値 P2 :第2壓力値 Pe :溶劑之蒸氣壓 P 1 0 :第1 0壓力値 P 1 1 :第1 1壓力値 vl :第1減壓速度 v2 :第2減壓速度 v3 :第3減壓速度 v4 :第4減壓速度 -24-Further, the second pressure 値P2 is lower than the pressure Pe, and is the pressure 値 at the solvent point t3 in the photoresist when the pressure is reduced by the second reduction. The first pressure 値P 1 is determined in advance according to each condition such as the type of the solvent, and the control unit 20 is in a period in which the pressure in the chamber 2 is repeatedly reduced to the second pressure 値 P2. As a result of the detection of 18, for the decompression speed g in the chamber 2, the vicinity of the decompression speed v2 (within a specific range) is S4) °, and then the decompression speed in the chamber 2 is relatively special, for example, In the case of the pressure 値, for example, the pressure of the vapor pressure in this case is controlled by the control unit 20, and the pressure reduction is performed by the second decompression speed v2 of the exhaust gas amount L. The second pressure 値P2 at the time when the vapor pressure v2 of the solvent that has entered the photoresist is gradually stopped until the end of the first period is not determined. The I force is from the first pressure 値P 1 , according to Whether or not the pressure detecting unit 1 is in the second: monitoring (in the case where the step range of Fig. 2 is smaller -13 to 10008008 (step S5 in Fig. 2), the flow rate adjusting valve is used to increase the exhaust gas flow rate. The opening degree of 15 is increased (step S6 of Fig. 2). On the other hand, when the decompression speed in the chamber 2 is a specific range In the case of a large case (step S5 in Fig. 2), the opening degree of the flow rate adjusting valve 15 is reduced in such a manner as to reduce the exhaust gas flow rate (step S7 in Fig. 2). Generally, when the pressure in the chamber 2 is gradually reduced from the first pressure 値P 1 to the second pressure 値P2, the pressure in the chamber 2 reaches the vapor pressure Pe of the solvent. When the pressure in the chamber 2 reaches the vapor pressure Pe slowly from the time point t2, the solvent evaporation system (without the sudden boiling state) starts at a low speed, and further, until the second pressure P2 is reached. It takes a long time to evaporate the solvent at a steady evaporation rate. Then, if the pressure in the chamber 2 is depressurized to the second pressure 値P2 (step S8 of Fig. 2), the photoresist is The evaporation of the solvent is abruptly terminated, and the control unit 20 stops the driving of the exhaust pump 17, and ends the vacuum drying process (step S9 of Fig. 2). As in the above, according to the embodiment of the present invention, The pressure in the chamber 2 is higher than the vapor pressure of the solvent of the photoresist, at least not to dissolve the foregoing At the time point 11 of the first pressure 値P 1 which is vaporized and evaporated, the pressure is reduced at the second gentle pressure reduction rate v2 at a lower speed. By this control, the pressure near the substrate surface is not obtained. The state of uniformity in the surface is maintained and the pressure is gradually reduced, and the vapor pressure of the solvent is reached. As a result, the boiling out evaporation of the solvent from the photoresist film is suppressed -14-201200830, and the low speed can be performed. The evaporation of the solvent can be used to make the dry state of the photoresist uniform. Further, by making the dry state of the photoresist uniform, it is possible to form, for example, in the wiring pattern formation process in the case where a half exposure process is used. The residual film thickness of the photoresist pattern and the uniformity of the line width are improved. Further, in the above-described embodiment, the flow rate adjusting valve 15 is provided as the exhaust gas amount adjusting means in the vacuum drying apparatus 1, and the amount of exhaust of the chamber 2 is adjusted by adjusting the opening degree thereof. Control, however, is not limited to this configuration in the present invention. For example, a configuration may be adopted in which an air introduction means (not shown) for allowing air to flow into the exhaust pipe 11 is provided instead of the flow rate adjustment valve 15, and air is introduced thereto. The amount is adjusted to control the displacement. Further, as described above with reference to Fig. 3, in the pressure control, the first pressure 値P1 and the second pressure 値P2 are set, and the decompression speed until the pressure 値 is reached is controlled. However, it is also possible to increase the set number of pressures to further control the decompression speed more finely. For example, as shown in FIG. 3, the third pressure 値P3 and the fourth pressure 値P4 may be further added in the vicinity of the first pressure 値P1, and the pressure may be reduced until the first pressure 値P1 is reached. Control for finer control. Further, for example, the fifth air pressure 値P5 and the sixth air pressure 値P6 may be provided between the first air pressure 値P1 and the second air pressure 値P2, and the pressure reduction control in the vicinity of the vapor pressure pe may be finely controlled. . -15-201200830 Further, in the above-described embodiment, the configuration in which the substrate G is placed on the stage 4 is provided in the cavity 2. However, the configuration is not limited to this configuration, and for example, it may be set as It is placed on the support pin or on the transport roller. [Examples] Next, according to the examples, the coating film forming direction of the present invention and the coating film forming apparatus will be further described. [Example 1-4] In Example 1-4, the glass substrate to which the photoresist was applied was housed in a cavity in an airtight state, and was decompressed to the first pressure 与 in the above-described embodiment. In the state of pressure 値 (400 Pa) corresponding to P1, the pressure is reduced to a specific pressure 相当于 corresponding to the second pressure 値 P2 at a specific time. Then, in the period from the pressure of 400 Pa to the second pressure 値 P2, the change in the evaporation rate of the solvent was examined. Further, in the photoresist, AZ-SR210 (AZ Co., Ltd.) was used, and in the solvent, PGMEA was used, and the coating film thickness of the photoresist film was set to 1 > 5 β m. Further, the pressure 相当于 corresponding to the second pressure 値P2 is set to 25 〇 Pa in the first embodiment, 2 〇 OPa in the second embodiment, and 150 kPa in the third embodiment. In Example 4, it was set to 100 Pa. In Fig. 4, the pressure changes in the chambers in each of Examples I-4 are shown. Further, in Fig. 5, a change in the evaporation rate of the photoresist solvent at this time is shown. -16- 201200830 From Fig. 5, it can be confirmed that in the case of Example i (400 Pa - 250 Pa) where the decompression speed is the most gentle, the change in the evaporation rate of the solvent is the least, and no boiling point occurs. Evaporation, therefore, is ideal. [Example 5-7] In Example 5-7, the pressure 相当于 corresponding to the first pressure 値P1 in the above embodiment was set to 400 Pa, and the specific pressure corresponding to the second pressure 値P2 was set.値, set to 2 50 Pa, and the time depending on the time from 400 Pa to 2 5 OP a will cause a change in the evaporation rate of the solvent. Further, the photoresist, the solvent, and the coating film thickness were the same as in Example 1-4. Further, the time from the pressure of 400 Pa to 25 〇Pa was 35 seconds in the fifth embodiment, 25 seconds in the sixth embodiment, and 15 seconds in the seventh embodiment. In Fig. 6, the pressure changes in the chambers of the respective embodiments 5-7 are shown. Further, in Fig. 7, a change in the evaporation rate of the photoresist solvent at this time is shown. From Fig. 7, it can be confirmed that in the case of the fifth embodiment in which the most time-consuming decompression speed is gentle, the change in the evaporation rate of the solvent is the least, and the boiling out evaporation does not occur, so ideal. From the results of the above Examples 1 to 7, it can be confirmed that the pressure is gradually reduced by taking a long time from at least the first pressure 値P 1 which does not cause the solvent of the photoresist to evaporate. The boiling of the solvent from the photoresist film -17-201200830 is suppressed, and the evaporation of the solvent at a low speed can be performed. [Embodiment 8] In the eighth embodiment, the pressure 相当于 corresponding to the first pressure 値 P1 in the above embodiment is set to 400 Pa, and the specific pressure 相当于 corresponding to the second pressure 値 P2 is set to 250Pa, and decompression from 400Pa to 250Pa. The half exposure process was performed using the photoresist film obtained as a result, and the measurement of the pattern line width and the residual film thickness of the obtained photoresist pattern was performed at 25 points in the substrate surface, and the measurement was performed. Take out the variation (deviation). Further, at each measurement point, the taper angle of the cross section of the resist pattern (the tilt angle with respect to the substrate surface: the 0 angle shown in Fig. 8(c)) was measured, and the average enthalpy was taken out. Further, as Comparative Example 1, the vacuum drying method of the prior art (that is, the vapor pressure of the solvent which is rapidly depressurized to the photoresist in the chamber and the drying treatment by maintaining the pressure) is performed. The substrate to be dried was taken in the same manner as in Example 8 to obtain a fluctuation range and a taper angle. Further, in Example 8 and Comparative Example 1, AZ-SR210 was used for the photoresist, and PGMEA was used for the solvent, and the coating film thickness of the photoresist film was 2.2/m. In Table 1, the results of Example 8 and Comparative Example 1 are shown. -18- 201200830 [Table i] Residual film thickness (ym) Line width ((4)) Cone angle (.) Example 8 0.37 0.67 60.19 Comparative example 1 0.63 1.09 81.81 As shown in Table 1, the general 'if applicable In the eighth embodiment of the vacuum drying method of the present invention, the variation width (deviation) of the residual film thickness and the line width of the resist pattern is the same as that of the comparative example 1 to which the prior art method is applied. It is confirmed that the uniformity in the plane of the substrate is improved compared to the prior art. Further, with respect to the taper angle, Example 8 was made smaller as compared with Comparative Example 1, and as a result of the review, it was confirmed that the slope of the first pressure 値p 1 to the vapor pressure P e (evaporation) was confirmed. The speed is controlled to control the taper angle of the resist pattern arbitrarily. Next, a second embodiment of the present invention will be described. In the present embodiment, the step of decompressing the inside of the chamber 2 is partially different from the above-described first embodiment. In addition, the description of the same portions as those of the above embodiment will be omitted. As shown generally in Fig. 11, if the chamber 2 is placed in an airtight state, the exhaust pump 17 is driven and the main valve 16 is opened. Then, the control unit 2 adjusts the opening degree of the flow rate adjusting valve 15 and starts the exhaust in the chamber 2 from the time point t0 of Fig. 12. Thereafter, the pressure reduction is performed by the third decompression speed v3 which is slower than the first decompression speed v1. until the specific first pressure 値P 1 0 is reached (for example, at the time point of FIG. 7 〇〇〇〇 P a ) at 11 0 (step S10 of Fig. 11). In addition, the decompression speed v3 at this time is -19-201200830 which is a decompression speed which does not cause the photoresist liquid to be coated on the substrate G to be boiled, and this is to prevent the surface of the photoresist from becoming abruptly caused by the bumping. Rough. When the pressure in the chamber 2 reaches the pressure 値P 1 0, the control unit 20 adjusts the opening degree of the flow rate adjustment valve 15 toward the opening direction, and increases the amount of exhaust gas by the first decompression speed v. (1) The pressure is reduced and the pressure is reduced until the first pressure 値P1 is reached (for example, 400 Pa at the time point t1 in Fig. 12). (Step S2 in Fig. 11) When the pressure in the chamber 2 reaches the first pressure 値P1, the control unit 20 adjusts the opening degree of the flow rate adjusting valve 15 toward the closing direction, and reduces the amount of exhaust gas. The pressure is gradually reduced at the second decompression speed v2 which is slower than the first decompression speed v1 (step S3 in Fig. 11). The slow pressure reduction control by the second decompression speed v2 is generally as shown in Fig. 12, from the time point 11 of the first pressure 値P 1 to the specific first pressure 値P 1 1 (for example, 3 5 OP a ) is performed during the period from time 11 1 . Further, the pressure 値P11 is lower than the vapor pressure Pe of the solvent of the photoresist, and is higher than the second pressure 値P2. Here, the pressure 値P11 is set in advance in accordance with various conditions such as the type of the solvent. Here, in the period from the first pressure 値P1 to the pressure 値P 1 1 from the first pressure 値P1, the control unit 20 refers to the cavity 2 based on the detection result of the pressure detecting unit 18. Whether the pressure reduction rate in the vicinity is in the vicinity of the second decompression speed v2 (within a specific range) is monitored (step S4 in Fig. 11), and then, when the decompression speed in the chamber 2 is smaller than a specific range - 20- 201200830 When the volume is suddenly flowed, it will be added to the square. Increase the amount of S6 flow queuing step 5 1 傧 1 to map C 'large} increase S5 degree to start step κ 1 5 of 1 11 valve diagram whole ✓fv week special speed reduction The flow of gas .111 makes the valve diagram of the L 5 of the L5 step by step (the timing reduction of the volume of the flow will be reduced by the large reduction of the Fan Dingding degree (step S7 of Figure II). As shown in Fig. 12, generally, at a time point t2 during which the pressure in the chamber 2 is slowly decompressed from the first pressure 値P 1 to the pressure 値P 1 1 , the pressure in the chamber 2 reaches the solvent. The vapor pressure Pe. Therefore, from the time before the time t2 at which the pressure in the chamber 2 slowly reaches the vapor pressure pe, the evaporation system of the solvent (without the sudden boiling state) starts at a low speed, and further, until the pressure 値P is reached. In the period from 1 to 1, it takes a long time to evaporate the solvent at a stable evaporation rate. Then, if the pressure in the chamber 2 is reduced to the pressure 値P11 (step S1 1 in Fig. 11), The opening of the flow regulating valve 15 is increased in such a manner as to increase the exhaust flow rate, and by the second decompression speed v2 The larger fourth decompression speed v4 is reduced to the second pressure 値P2 (step S12 in Fig. 11). Further, at the time point 11 1 , the surface of the photoresist is slightly dry, even if it is to be reduced When the pressure speed is increased from v2 to v4, there is no problem in processing. Then, if the pressure in the chamber 2 is depressurized to the second pressure 値P2, the evaporation of the solvent in the photoresist is slightly terminated, and the control is terminated. The part 20 stops the driving of the exhaust pump 1 7 and ends the vacuum drying process (step S13 of Fig. 2). As described above, according to the second embodiment of the present invention, in addition to the effects of the above-described embodiments, It is also possible to prevent the boiling of the - 21,008,00830 at the start of the decompression, and therefore, it is possible to prevent the surface of the photoresist film from becoming thick, and from the pressure 値P11 until the pressure 値P2, due to the decompression speed v2 Since the larger pressure reduction rate v4 is further reduced in pressure, the processing can be completed in a shorter time than in the above embodiment. Further, in step S10 of the second embodiment, the steps in Fig. 11 may be used. S4, step S5, step S6, step S7, step S11 Similarly, the exhaust operation is controlled by the third decompression speed v3 until the pressure 値P10 is reached, and in step S12, the exhaust operation can be controlled by the fourth decompression speed v4 in the same manner. [Fig. 1] Fig. 1 is a cross-sectional view showing the overall schematic configuration of one embodiment of the present invention. [Fig. 2] Fig. 2 is for A flow chart showing the operation of one embodiment of the present invention [Fig. 3] Fig. 3 is a graph showing the control of the pressure reduction in the cavity in one embodiment of the present invention. Fig. 4 is a graph showing changes in pressure in a cavity in Examples 1 to 4 of the present invention. Fig. 5 is a graph showing changes in the evaporation rate of the solvent of the photoresist in Examples 1 to 4 of the present invention. Fig. 6 is a graph showing changes in pressure in a cavity in Examples 5 to 7 of the present invention. Fig. 7 is a graph showing changes in the evaporation rate of the solvent of -22 - 201200830 of the photoresists in Examples 5 to 7 of the present invention. Fig. 8 (a) to (e) are cross-sectional views for explaining a series of formation processes using a wiring pattern having a half exposure process. Fig. 9 is a graph showing the results of the case where the prior art vacuum drying method is used, and is a graph showing changes in the pressure in the chamber and the change in the evaporation speed of the solvent of the photoresist. Fig. 10 (a) and (b) are cross-sectional views for explaining variations in the residual film of the resist pattern in the forming process using the wiring pattern having the semi-exposure treatment. Fig. 11 is a flow chart showing the operation of the second embodiment of the present invention. Fig. 12 is a graph showing the control of the pressure reduction in the chamber in the second embodiment of the present invention. [Main component symbol description] 1 : Vacuum drying device 2: Cavity 2a: Lower chamber 2b: Upper chamber 4: Platform 5: Fixing pin 6: Lifting shaft 1 〇: Exhaust port 1 1 : Exhaust pipe -23- 201200830 1 5 : Flow rate adjustment valve (discharge amount adjustment means) 1 6 : Main valve 1 7 : Exhaust pump (exhaust means) 2 0 : Control part G: Glass substrate (substrate to be processed) P 1 : 1st pressure値P2: second pressure 値Pe: vapor pressure of solvent P 1 0 : first pressure 値P 1 1 : first pressure 値vl : first decompression speed v2 : second decompression speed v3 : third reduction Pressure speed v4: 4th decompression speed -24-