TW201137517A - Radiation-sensitive composition, insulation film formation method, insulation film and solid photographic component - Google Patents

Radiation-sensitive composition, insulation film formation method, insulation film and solid photographic component Download PDF

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TW201137517A
TW201137517A TW100104900A TW100104900A TW201137517A TW 201137517 A TW201137517 A TW 201137517A TW 100104900 A TW100104900 A TW 100104900A TW 100104900 A TW100104900 A TW 100104900A TW 201137517 A TW201137517 A TW 201137517A
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Taiwan
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compound
insulating film
radiation
polymer
linear composition
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TW100104900A
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Chinese (zh)
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Mibuko Shimada
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Jsr Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

This invention provides a radiation-sensitive composition, an insulation film formation method, an insulation film and a solid photographic component suitable for the formation of an insulation film for assembly of a photoelectric conversion portion in a solid photographic component such as a CCD, a CMOS, etc. The radiation-sensitive resin composition of this invention contains a black colorant, polymer with phenolic hydroxyl group, a radiation-sensitive acid generator, and a cross-linker carrying out cross-linking reaction by the acid.

Description

201137517 六、發明說明: 【發明所屬之技術領域】 本發明係有關敏輻射線性組成物、絕緣膜之形成方法 、絕緣膜及固體攝影元件。更詳細係有關適用於形成CCD 、CMOS等之固體攝影元件中之光電轉換部之組裝用之絕 緣膜之敏輻射線性組成物、絕緣膜之形成方法、絕緣膜及 固體攝影元件。 【先前技術】 近年,具備含有CCD、CMOS等之固體攝影元件之固 体攝影裝置的數位相機、攝影機、車上攝影機、具有攝影 功能之數位電腦、行動電話、電子小冊等之電子機器的性 能急速提高。此固體攝影元件中,爲了降低暗電流、防止 動態範圍之降低、周邊電路之動作安定,同時抑制畫質之 降低,對於固體攝影元件所含之光電轉換部而言,通常係 遮蔽不要的光,例如在專利文獻1及2中爲公知。此等文獻 中揭示含有黑色著色劑及樹脂’配置於固體攝影元件中之 光電轉換部之有效像素區域(攝影部)之週緣的遮光膜。 此外,專利文獻3中揭示含有碳黑、丙烯酸系樹脂、丙烯 酸系單體及光聚合起始劑的遮光膜形成用敏輻射線性組成 物。 [先行技術文獻] [專利文獻] 201137517 [專利文獻1]日本特開2006-156801號公報 [專利文獻2 ]日本特開2 00 7 - 1 1 5 9 2 1號公報 [專利文獻3]日本特開平11-142637號公報 【發明內容】 [發明槪要] [發明欲解決的課題] 通常藉由使用遮光膜形成用敏輻射線性組成 先形成於基板(含氧化矽膜基板等)之絕緣膜的 成前述遮光膜。換言之,製造固體攝影元件等時 須有在基板上形成絕緣膜的步驟及於藉由此步驟 絕緣膜上形成遮光膜的步驟。 因此,爲了更簡化步驟(提高良率),而檢 緣膜之步驟及形成遮光膜之步驟之合理化,要求 成具有絕緣性及遮光性之兩種性能之絕緣膜的組 外’此絕緣膜必須對於氧化矽膜(Si 02 )及電極 性也優異。 本發明之目的係提供敏輻射線性組成物、特 形成固體攝影元件中之光電轉換部之組裝用的絕 絕緣性、遮光性及密著性優異的敏輻射線性組成 膜之形成方法、絕緣膜及固體攝影元件。 [解決課題的手段] 本發明係如下述。 物,在預 表面,形 ,至少必 所形成之 討形成絕 開發可形 成物。此 等之密著 別是適合 緣膜,且 物、絕緣 -6- 201137517 [1〕一種敏輻射線性組成物,其特徵係含有 (A )黑色劑' (B) 具有酚性羥基之聚合物、 (C) 敏輻射線性酸產生劑、 (D) 藉由酸之作用進行交聯反應的交聯劑。 [2〕如前述第〔1〕項之敏輻射線性組成物,其中前 述(B)具有酚性羥基之聚合物爲具有酚性羥基之化合物 與具有甲醯基之化合物的縮合物。 〔3〕如前述第(1〕項之敏輻射線性組成物,其中前 述(B)具有酚性羥基之聚合物爲具有羥基苯乙烯之聚合 性不飽和鍵開裂之構造單位的聚合物。 〔4〕如前述第〔1〕項之敏輻射線性組成物,其中前 述(B )具有酚性羥基之聚合物爲含有具有酚性羥基之化 合物與具有甲醯基之化合物的縮合物及具有羥基苯乙烯之 聚合性不飽和鍵開裂之構造單位的聚合物。 〔5〕如前述第〔1〕項之敏輻射線性組成物,其中前 述(D )交聯劑係含有羥甲基之化合物。 〔6〕如前述第〔1〕項之敏輻射線性組成物,其係再 含有(E )交聯聚合物粒子。 〔7〕如前述第〔1〕〜〔6〕項中任一項之敏輻射線性 組成物,其係固體攝影元件中之光電轉換部之組裝用之絕 緣膜形成用的敏輻射線性組成物。 〔8〕一種絕緣膜之形成方法’其係固體攝影元件中 之光電轉換部之姐裝用的絕緣膜之形成方法,其特徵係具 S· 201137517 備· (1)於具備電極部之基板上形成由如前述第(73 $ 之敏輻射線性組成物所構成之塗膜的步驟、 (2 )至少對形成於前述電極部上之塗膜以外的^ _ 進行曝光的步驟、 (3 )將曝光後之塗膜進行顯像的步驟。 〔9〕一種絕緣膜,其特徵係藉由如前述第〔8〕項之 絕緣膜之形成方法而形成者。 〔10〕一種絕緣膜,其特徵係由如前述第〔1〕~〔 6 〕項中任一項之敏輻射線性組成物而製得者。 〔1 1〕一種固體攝影元件,其特徵係至少具備光電轉 換部、如前述第〔9〕項之絕緣膜、及電極部。 [發明之效果] 依據本發明之敏輻射線性組成物時,可形成絕緣性、 遮光性及密著性優異的絕緣膜。特別是此敏輻射線性組成 物係適用於形成CCD、CMOS等之固體攝影元件中之光電 轉換部之組裝用的絕緣膜。 依據本發明之絕緣膜之形成方法時,可形成絕緣性、 遮光性及密著性優異的絕緣膜。因此,不需各別絕緣部與 遮光部,可縮減以往的製程,適用於具備含有CCD、 CMOS等之固體攝影元件之固体體攝影裝置的電子機器領 域。 本發明之固體攝影元件係具備絕緣性、遮光性及密著 -8 - 201137517 性優異的絕緣膜。因此,可適用於具備含有CCD、CMOS 等之固體攝影元件之固體攝影裝置的電子機器領域❶ [實施發明的形態] 以下詳細說明本發明。本說明書中,「(甲基)丙醯 烯基」係指丙醯烯基及甲基丙醯烯基,「(甲基)丙烯酸 酯」係指丙烯酸酯及甲基丙烯酸酯。 [1 ]敏輻射線性組成物 本發明之敏輻射線性組成物之特徵係含有(A)黑色 劑(以下也稱爲「黑色劑(A)」)、(B )具有酚性羥基 之聚合物(以下也稱爲「聚合物(B)」)、(C)敏輻射 線性酸產生劑(以下也稱爲「酸產生劑(C )」)及(D ) 藉由酸之作用進行交聯反應的交聯劑(以下也稱爲「交聯 劑(D )」)。 此敏輻射線性組成物可適用於形成CCD、CMOS等之 固體攝影元件中之光電轉換部之組裝用的絕緣膜。 (A )黑色劑 黑色劑(A )係廣義上指吸收紅外線的化合物。具體 而言’表示將相對於聚甲基丙烯酸(藉由凝膠滲透色譜之 聚苯乙嫌換算之重量平均分子量;50, 〇〇〇) 1〇〇質量份, 黑色劑爲1質量份及甲基乙基酮50質量份所構成之組成物 ,藉由旋轉塗佈法塗佈後,使用加熱板以1 〇 〇 加熱形成201137517 VI. Description of the Invention: [Technical Field] The present invention relates to a linear composition for radiation radiation, a method for forming an insulating film, an insulating film, and a solid-state imaging device. More specifically, it relates to a sensitive radiation linear composition, an insulating film forming method, an insulating film, and a solid-state imaging element which are suitable for forming an insulating film for assembling a photoelectric conversion portion in a solid-state imaging device such as a CCD or a CMOS. [Prior Art] In recent years, the performance of electronic cameras including digital cameras, cameras, on-board cameras, digital computers with photography functions, mobile phones, electronic booklets, etc., which have solid-state imaging devices such as CCDs and CMOSs improve. In the solid-state imaging device, in order to reduce the dark current, prevent a decrease in the dynamic range, and stabilize the operation of the peripheral circuit, and suppress the deterioration of the image quality, the photoelectric conversion unit included in the solid-state imaging device usually shields the unnecessary light. For example, it is known in patent documents 1 and 2. In these documents, a light-shielding film containing a black colorant and a resin disposed on the periphery of an effective pixel region (photographing portion) of a photoelectric conversion portion in a solid-state imaging device is disclosed. Further, Patent Document 3 discloses a linear composition for forming a light-shielding film containing a carbon black, an acrylic resin, an acrylic monomer, and a photopolymerization initiator. [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2006-156801 [Patent Document 2] Japanese Patent Laid-Open No. 00 7 - 1 1 5 9 2 1 [Patent Document 3] [Summary of the Invention] [Problem to be Solved by the Invention] The insulating film which is first formed on a substrate (including a ruthenium oxide film substrate or the like) is formed by linearly forming a sensitive radiation using a light-shielding film. The aforementioned light shielding film. In other words, the step of forming an insulating film on the substrate and the step of forming a light-shielding film on the insulating film by this step are required in the production of the solid-state imaging device or the like. Therefore, in order to simplify the steps (improve the yield), the steps of the edge film and the step of forming the light shielding film are required to be an outer layer of an insulating film having both insulating properties and light blocking properties. It is also excellent in yttrium oxide film (Si 02 ) and electrode properties. An object of the present invention is to provide a method for forming a radiation sensitive linear composition film excellent in insulating property, light blocking property, and adhesion for assembling a radiation-sensitive linear composition and a photoelectric conversion portion in a solid-state imaging device, and an insulating film and Solid photographic element. [Means for Solving the Problem] The present invention is as follows. Things, in the pre-surface, shape, at least must be formed to form a formable material. These are not suitable for the film, and the material is insulated. -6-201137517 [1] A sensitive radiation linear composition characterized by (A) black agent' (B) a polymer having a phenolic hydroxyl group, (C) a sensitive radiation linear acid generator, (D) a crosslinking agent which undergoes a crosslinking reaction by the action of an acid. [2] The radiation sensitive linear composition according to the above [1], wherein the polymer having a phenolic hydroxyl group as described above is a condensate of a compound having a phenolic hydroxyl group and a compound having a methyl group. [3] The sensitive radiation linear composition according to the above item (1), wherein the polymer having a phenolic hydroxyl group (B) is a polymer having a structural unit of polymerizable unsaturated bond cleavage of hydroxystyrene. The sensitive radiation linear composition according to the above item [1], wherein the (B) polymer having a phenolic hydroxyl group is a condensate containing a compound having a phenolic hydroxyl group and a compound having a methyl group and having a hydroxystyrene [5] The linear radiation-sensitive composition of the above-mentioned (1), wherein the (D) crosslinking agent is a compound containing a methylol group. [6] The sensitive radiation linear composition of the above item [1], which further comprises (E) a crosslinked polymer particle. [7] The linear composition of the sensitive radiation according to any one of the above [1] to [6] A sensitive radiation linear composition for forming an insulating film for assembling a photoelectric conversion portion in a solid-state imaging device. [8] A method for forming an insulating film, which is a sister of a photoelectric conversion portion in a solid-state imaging device Insulating film The forming method is characterized in that: (1) a step of forming a coating film composed of the linear radiation composition of the above-mentioned (73), and at least pair formation on the substrate having the electrode portion. a step of exposing the film other than the coating film on the electrode portion, and (3) a step of developing the film after the exposure. [9] An insulating film characterized by the above [8] [10] An insulating film which is obtained by the linear composition of the radiation of any one of the above [1] to [6]. [1] 1] A solid-state imaging device comprising at least a photoelectric conversion portion, an insulating film according to the above item [9], and an electrode portion. [Effect of the Invention] According to the sensitive radiation linear composition of the present invention, insulation can be formed. An insulating film excellent in properties, light-shielding property, and adhesion. In particular, the radiation-sensitive linear composition is suitable for forming an insulating film for assembling a photoelectric conversion portion in a solid-state imaging device such as a CCD or a CMOS. When the film is formed, An insulating film having excellent insulating properties, light-shielding properties, and adhesion. Therefore, it is possible to reduce the conventional process without requiring separate insulating portions and light-shielding portions, and is suitable for a solid-state imaging device including a solid-state imaging device such as a CCD or a CMOS. In the field of the electronic device, the solid-state imaging device of the present invention is provided with an insulating film having excellent insulating properties, light-shielding properties, and adhesion to the -8 - 201137517. Therefore, it can be applied to a solid-state imaging device including a solid-state imaging device including a CCD or a CMOS. EMBODIMENT OF THE EMBODIMENT OF THE INVENTION The present invention will be described in detail below. In the present specification, "(meth)propenyl" means propylenyl and methacryloyl, "(methyl)" "Acrylate" means acrylate and methacrylate. [1] Linear radiation sensitive composition The sensitive linear composition of the present invention is characterized by (A) black agent (hereinafter also referred to as "black agent (A)" (B) a polymer having a phenolic hydroxyl group (hereinafter also referred to as "polymer (B)"), (C) a radiation-sensitive linear acid generator (hereinafter also referred to as "acid generator (C)") and (D) by acid A crosslinking agent that acts to carry out a crosslinking reaction (hereinafter also referred to as "crosslinking agent (D)"). This sensitive radiation linear composition can be suitably used for forming an insulating film for assembling a photoelectric conversion portion in a solid-state imaging device such as a CCD or a CMOS. (A) Black agent The black agent (A) refers broadly to a compound that absorbs infrared rays. Specifically, 'expresses 1 part by mass relative to polymethacrylic acid (weight average molecular weight converted by polyphenylene hydride by gel permeation chromatography; 50, 〇〇〇), 1 part by mass of black agent and A The composition of 50 parts by mass of ethyl ethyl ketone is coated by a spin coating method and then heated by a heating plate at 1 Torr.

S -9 - 201137517 之膜厚20 μπι之塗膜之波長12 OOnm下的光線透過率成爲 50%T以下者。 前述黑色劑(A )例如有碳黑、鈦黒、氧化鐵、氧化 錳、石墨及染料等。此等中,較佳爲碳黑、鈦黑。 前述碳黑例如有爐黑、熱黑、乙炔黑等。 此外,前述碳黑可使用例如有三菱化學公司製之商品 名、#2400 ' #23 50 ' #23 00、#2200、#1000、#980、#970 、#960、#95 0 > #900 ' #8 5 0 > MCF88、#650、MA600、 MA7、MA8、MA11、M A 1 0 0、Μ A 2 2 0、IL 3 Ο B、IL 3 1 B、 IL7B 、 IL11B 、 IL52B 、 #4000 、 #4010 、 #55 、 #52 ' #50 、 #47 ' #45、#44、#40、#33、#32、#30、#20、#10、#5、 CF9 、 #3050 、 #3150 、 #3250 、 #3750 、 #3950 、 DiablackA 、Diab 1 ackN220M、Diab 1 ackN23 4、DiablackI、DiablackLI 、Diablackll、D i ab 1 a ckN 3 3 9、D i ab 1 ac k S H、D i ab 1 ack S H A 、DiablackLH、DiablackH、DiablackHA、DiablackSF、 D i ab 1 a ckN 5 5 0 M、DiablackE、DiablackG、 DiablackR、 DiablackN760M、DiablackLP ; Cancav公司製之商品名、 thermaxN990、N991、N907、N908、N990、N991、N908 :旭Carbon公司製之商品名、旭#80、旭#70、旭#70L、旭 F-200、旭 #66、旭 #66HN、旭 #60H、旭 #60U、旭 #60、旭 #55 、旭#50H、旭 #51、旭 #50U、旭 #50、旭 #35、旭 #15、 Asahi thermal ; Degussa公司製之商品名、ColorBlack F w 2 0 0 ' ColorBlack Fw2 ' ColorBlack Fw2V ' ColorBlack Fwl 、 ColorBlack Fwl8 、 ColorBlack S170 、 ColorBlack -10- 201137517 S 1 6Ο、Specia 1B1 ack6、SpecialB1 ack5 ' Specia 1B1 ack4 ' SpecialBlack4A 、 PrintexU ' Printex V 、 Printex 140U 、 Printex 1 40V等。 此外,也可使用日本特開平11-60988號公報、特開平 1 1 -609 89號公報、特開平1 0-33 0643號公報、特開平1 1-8 05 8 3號公報、特開平1 1 -805 84號公報、特開平9- 1 24969號 公報、特開平9-95 625號公報、特開平9-7 1 733號公報所揭 示之樹脂被覆碳黑。 前述碳黑較佳爲具有絕緣性的碳黑。具有絕緣性的碳 黑係指以下述的方法量測粉末之體積電阻時,顯示絕緣性 ,即體積電阻値爲1 〇6Ω · cm以上的碳黑,例如於碳黑粒子 表面吸附、被覆有機物或有機物進行化學鍵結(接枝化) 等,碳黑粒子表面具有有機化合物者。 使碳黑相對於以莫耳比70 : 3 0含有苄基甲基丙烯酸酯 及來自甲基丙烯酸之重複構造單位的共聚合物(重量平均 分子量30,000 ),成爲質量比20: 80的狀態,分散於丙二 醇單甲醚中,得到分散液。然後,將此分散液塗佈於厚度 1.1mm、lOcmxlOcm之鉻基板上,製作乾燥膜厚3μπι之塗膜 。接著,將此塗膜在烘箱中,以200°C熱處理1小時。然後 ,使用依據JIS K6911之三菱化學公司製之高電阻率計( 「HirestaUP(MCP-HT450)」),在溫度 23 °C 及相對濕 度65 %的條件下,量測體積電阻値。 本發明中,較佳之碳黒的體積電阻値較佳爲1〇8Ω · cm 以上,更佳爲109Q.cm以上。S -9 - 201137517 The film with a film thickness of 20 μm has a light transmittance of 12% or less at a wavelength of 12 OOnm. The black agent (A) may, for example, be carbon black, titanium bismuth, iron oxide, manganese oxide, graphite or a dye. Among these, carbon black and titanium black are preferred. The carbon black is, for example, furnace black, hot black, acetylene black or the like. Further, as the carbon black, for example, a product name manufactured by Mitsubishi Chemical Corporation, #2400 ' #23 50 ' #23 00, #2200, #1000, #980, #970, #960, #95 0 >#900 can be used. '#8 5 0 > MCF88, #650, MA600, MA7, MA8, MA11, MA 1 0 0, Μ A 2 2 0, IL 3 Ο B, IL 3 1 B, IL7B, IL11B, IL52B, #4000, #4010 , #55 , #52 ' #50 , #47 ' #45, #44, #40, #33, #32, #30, #20, #10, #5, CF9, #3050, #3150, #3250, #3750, #3950, DiablackA, Diab 1 ackN220M, Diab 1 ackN23 4, DiablackI, DiablackLI, Diablackll, D i ab 1 a ckN 3 3 9, D i ab 1 ac k SH, D i ab 1 ack SHA , DiablackLH, DiablackH, DiablackHA, DiablackSF, D i ab 1 a ckN 5 5 0 M, DiablackE, DiablackG, DiablackR, DiablackN760M, DiablackLP; Trade names made by Cancav, thermaxN990, N991, N907, N908, N990, N991, N908 : Asahi Carbon Company's trade name, Asahi #80, Asahi #70, Asahi #70L, Asahi F-200, Asahi #66, Asahi #66HN, Asahi #60H, Asahi #60U, Asahi #60, Asahi #55, Asahi #50H, Asahi #51, Asahi #50U , Asahi #50, Asahi #35, Asahi #15, Asahi thermal; Degussa company's trade name, ColorBlack F w 2 0 0 ' ColorBlack Fw2 ' ColorBlack Fw2V ' ColorBlack Fwl , ColorBlack Fwl8 , ColorBlack S170 , ColorBlack -10- 201137517 S 1 6Ο, Specia 1B1 ack6, SpecialB1 ack5 'Specia 1B1 ack4 'SpecialBlack4A, PrintexU 'Printex V, Printex 140U, Printex 1 40V, etc. In addition, Japanese Laid-Open Patent Publication No. Hei 11-60988, Japanese Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The resin-coated carbon black disclosed in Japanese Laid-Open Patent Publication No. Hei 9- No. Hei. The carbon black is preferably an insulating carbon black. Insulating carbon black refers to carbon black which exhibits insulation properties, that is, a volume resistance 値 of 1 〇 6 Ω · cm or more, for example, on the surface of carbon black particles, and is coated with organic matter or when the volume resistance of the powder is measured by the following method. The organic substance is chemically bonded (grafted) or the like, and the surface of the carbon black particle has an organic compound. The carbon black is dispersed in a state of a mass ratio of 20:80 to a copolymer having a benzyl methacrylate having a molar ratio of 70:30 and a repeating structural unit derived from methacrylic acid (weight average molecular weight: 30,000). In propylene glycol monomethyl ether, a dispersion was obtained. Then, this dispersion was applied onto a chromium substrate having a thickness of 1.1 mm and 10 cm x 10 cm to prepare a coating film having a dry film thickness of 3 μm. Next, this coating film was heat-treated at 200 ° C for 1 hour in an oven. Then, using a high resistivity meter ("HirestaUP (MCP-HT450)" manufactured by Mitsubishi Chemical Corporation, JIS K6911, the volume resistance 値 was measured at a temperature of 23 ° C and a relative humidity of 65%. In the present invention, the volume 値 of the carbon ruthenium is preferably 1 〇 8 Ω · cm or more, more preferably 109 Q. cm or more.

S -11 - 201137517 此外,前述鈦黑例如有TiO、Ti0125、Ti203、Ti407、 丁13〇5等(1^0“1$叉各4、1$乂$7、乂/\<1.75)之低次氧 化鈦:氮化鈦;TiOxNy ( 〇·2<χ<0.8、0.6<y<l ·2 )之氧氮 化鈦等8 低次氧化鈦例如有記載於日本特公昭5 2 - 1 2 7 3 3號公報 ’將二氧化鈦與金屬鈦粉末在真空或還原氣氛中,以 55〇°C〜1100°C之溫度加熱所得的化合物;記載於特開昭64-1 1 5 72號公報,將含水二氧化鈦與金屬鈦粉末,在由含有 矽、鋁、鈮、鎢等之化合物所構成之燒成處理補助劑之存 在下,在惰性氣氛中加熱所得的化合物等。 此外,氧氮化鈦例如有記載於特公平3-51645號公報 、特公平242773號公報等,將二氧化鈦或氫氧化鈦粉末 在氨存在下,以5 5 0 °C〜950°C程度之溫度還原所得的化合物 〇 前述鈦黑可使用例如三菱Materia公司製之商品名、 10S、12S、13M、13M-C、13R、13R-N:赤穗化成公司製 之商品名、TilackD超微粒子形態等。 前述鈦黑也可使用經表面處理者。 前述黑色劑(A)之數平均粒徑從分散安定性及沈降 防止的觀點,較佳爲4Qnm以下,更佳爲5〜4〇nm,更佳爲 5〜3 Onm。此外,前述數平均粒徑可爲使用電子顯微鏡量測 的値。 敏輻射線性組成物中之黑色劑(A )的含量係當後述 之聚合物(B )爲1〇〇質量份(但是調配有後述之酚性低分 -12- 201137517 子化合物時,聚合物(B )與酹性低分子化合物之合計爲 100質量份)時,較佳爲0.1~200質量份,更佳爲0_5〜12〇質 量份,更佳爲5〜40質量份。黑色劑(A)之含量在前述範 圍時’可得到具有充分之遮光性的絕緣膜。即’溫度2 3 °C 中,將波長1,00 Onm之光照射於厚度20 μπι之絕緣膜時的 透過率,較佳爲20%Τ以下,更佳爲15%Τ以下,更佳爲 1 0 % Τ以下。 黑色劑(A )之含量多於200質量份時,絕緣膜之力學 強度可能變得不足。 使用黑色劑(A )時,以黑色劑(A )作爲分散質, 並分散於分散媒之黑色劑分散液的形態使用較佳。 此分散媒可使用本發明之敏輻射線性組成物所利用之 後述的溶劑(G )。此時,溶劑(G )可單獨1種使用或組 合2種以上使用。 此外,分散媒之調配量係黒色劑(A)爲100質量份時 ,較佳爲200〜1200質量份,更佳爲30〇~1〇〇〇質量份。 黑色劑分散液中可再調配分散劑或分散助劑等。此分 散劑或分散助劑只要是可將黑色劑(A )在組成物中安定 ’且無凝集者即可,無特別限定。例如可爲陽離子系、陰 離子系、非離子系及兩性系等任一形態,且可再含有砂等 之無機元素者,或也可爲聚合物。具體而言,例如有改性 丙稀酸系共聚合物、丙烯酸系共聚合物、聚胺基甲酸酯、 聚酯 '矽烷偶合劑、高分子共聚合物之烷基銨鹽或磷酸酸 酯鹽 '陽離子性梳型接枝聚合物等。其中陽離子性梳型接S -11 - 201137517 In addition, the aforementioned titanium black is, for example, low in TiO, Ti0125, Ti203, Ti407, butyl 13〇5, etc. (1^0"1$ forks each 4, 1$乂$7, 乂/\<1.75) Sub-titanium oxide: titanium nitride; TiOxNy (〇·2 < χ < 0.8, 0.6 < y < l · 2 ) titanium oxynitride, etc. 8 low-order titanium oxide, for example, is described in Japanese Patent Publication No. 5 2 - 1 2 In the case of the titanium dioxide and the titanium metal powder, the obtained compound is heated at a temperature of 55 ° C to 1100 ° C in a vacuum or a reducing atmosphere; it is described in JP-A-64-1 1 5 72, The aqueous titanium oxide and the titanium metal powder are heated in an inert atmosphere in the presence of a baking treatment auxiliary agent containing a compound such as ruthenium, aluminum, ruthenium or tungsten. Further, for example, titanium oxynitride has In the case of the titanium dioxide or the titanium hydroxide powder, the titanium oxide or the titanium hydroxide powder is reduced in the presence of ammonia at a temperature of about 550 ° C to 950 ° C. For example, the trade name of Mitsubishi Materia, 10S, 12S, 13M, 13M-C, 13R, 13R-N: Ako-chemical The product name of the company, the TilackD ultrafine particle form, etc. The titanium black may be used as a surface treatment. The number average particle diameter of the black agent (A) is preferably 4 Q nm or less from the viewpoint of dispersion stability and sedimentation prevention. More preferably, it is 5 to 4 Å, more preferably 5 to 3 Onm. Further, the aforementioned number average particle diameter may be 値 measured by an electron microscope. The content of the black agent (A) in the linear composition of the sensitizing radiation is The polymer (B) to be described later is 1 part by mass (however, when the phenolic low score -12-201137517 sub-compound described later is blended, when the total of the polymer (B) and the inert low molecular compound is 100 parts by mass) Preferably, it is 0.1 to 200 parts by mass, more preferably 0 to 5 to 12 parts by mass, still more preferably 5 to 40 parts by mass. When the content of the black agent (A) is within the above range, an insulation having sufficient light shielding property can be obtained. The film, that is, the transmittance at a temperature of 2 3 ° C when the light having a wavelength of 1,00 Onm is applied to the insulating film having a thickness of 20 μm, preferably 20% Τ or less, more preferably 15% Τ or less, more preferably It is 10% Τ or less. When the content of the black agent (A) is more than 200 parts by mass, the insulating film When the black agent (A) is used, it is preferable to use a black agent (A) as a dispersoid and to disperse it in a black agent dispersion liquid of a dispersion medium. The solvent (G) to be described later is used for the linear composition of the radiation. In this case, the solvent (G) may be used alone or in combination of two or more. Further, when the amount of the dispersing medium is 100 parts by mass of the coloring agent (A), it is preferably 200 to 1200 parts by mass, more preferably 30 to 1 part by mass. A dispersing agent or a dispersing aid may be further added to the black agent dispersion. The dispersing agent or dispersing aid is not particularly limited as long as it can stabilize the black agent (A) in the composition and does not agglomerate. For example, it may be in any form such as a cationic system, an anion system, a nonionic system or an amphoteric system, and may further contain an inorganic element such as sand or may be a polymer. Specifically, for example, a modified acrylic acid-based copolymer, an acrylic copolymer, a polyurethane, a polyester 'decane coupling agent, an alkylammonium salt of a polymer copolymer or a phosphate ester a salt 'cationic comb type graft polymer or the like. Cationic comb type

S -13- 201137517 枝聚合物係指具有複數之鹼性基(陽離子性之官能基)之 幹聚合物1分子上有2分子以上之枝聚合物接枝結合之構造 的聚合物’例如幹聚合物部爲聚乙烯亞胺,枝聚合物部爲 ε·己內酯之開環聚合物所構成的聚合物。 此等中’較佳爲改性丙烯酸系共聚合物、聚胺基甲酸 酯、陽離子性梳型接枝聚合物及矽烷偶合劑之γ-環氧丙氧 基丙基三甲氧基矽烷、γ-甲基丙醯烯氧三甲氧基矽烷及其 水解縮合物。 此等分散劑或分散助劑可從商業上取得,例如改性丙 烯酸系共聚合物,例如有Disperbyk-2000、Disperbyk-2001 (以上爲BYK公司製)、聚胺基甲酸醋例如有Disperbyk-161 、 Disperbyk-162 、 Disperbyk-165 、 Disperbyk-167 、 Disperbyk-170、Disperbyk-182 (以上爲 BYK公司製)、 SOLSPERSE 76500 ( Lubrizol (股)公司製) 、 SOLSPERSE 5000、 SOLSPERSE 37500、陽離子性梳型接 枝聚合物例如有SOLSPERSE 24000 ( Lubrizol (股)公司 製)、ajisuper PB821 ' aj isuperP B 822 ( ajinomoto-fine-techno股份公司製)^ 此等分散劑或分散助劑可單獨1種使用或組合2種以上 使用。 使用前述分散劑或分散助劑時,前述分散劑或分散助 劑之含量係藉由使用之黑色劑(A )之種類及分散劑等之 種類等之組合來適當調整。黑色劑(A)爲100質量份時, 較佳爲100質量份以下,更佳爲0.5〜100質量份,更佳爲 -14- 201137517 10~5 0質量份。前述分散劑或分散助劑之含量爲100質量份 以下時,可得到顯像性優異的敏輻射線性組成物。 此外,黑色劑分散液之調製方法係例如將黑色劑(A )在分散媒中,在分散劑等之添加劑之存在下,使用粉碎 機、棒磨機(Rod mill )、珠磨機、輥磨機等,進行粉碎 混合可調製黑色劑分散液。 (B)具有酚性羥基之聚合物 前述聚合物(B )係具有酚性羥基者,藉由鹼顯像液 顯像時,使用鹼可溶性的聚合物。 「鹼可溶性」係指2.3 8質量%之四氫氧化四甲銨水溶 液爲1〇〇質量份時,此水溶液中可溶解10質量份以上之聚 合物(B )的情形。 前述聚合物(B)例如可使用具有酚性羥基之化合物 與具有甲醯基之化合物的縮合物(以下也稱爲「聚合物( B1 )」)。 前述具有酚性羥基之化合物,例如有、酚、m _甲酣、 p -甲酣、〇 -甲酣等之甲酌類;2,5 -二甲酣、3,5 -二甲酣、 3,4-二甲酚、2,3-二甲酚等之二甲酚類;m-乙基酚、卜乙 基酌' 〇 -乙基酹、p-t -丁基酣、p -辛基酌、2,3,5 -三甲基酣 等之烷基酚類;P -甲氧基酚' m -甲氧基酚' 3,:5 -二甲氧基 酚、2-甲氧基·4-甲基酚、m-乙氧基酚、p_乙氧基酚、.丙 氧基酚、P-丙氧基酚、m-丁氧基酚、p_ 丁氧基酚等之院氧 基酚類;2-甲基-4-異丙基酚等之雙烷基酚類;m_氯酣、p_S -13- 201137517 A branched polymer refers to a polymer having a complex basic group (cationic functional group), a polymer having a structure in which two or more molecules of a branched polymer are graft-bonded, such as dry polymerization. The material is a polyethyleneimine, and the branched polymer portion is a polymer composed of a ring-opening polymer of ε·caprolactone. Among these, 'preferably a modified acrylic copolymer, a polyurethane, a cationic comb graft polymer, and a decane coupling agent, γ-glycidoxypropyltrimethoxydecane, γ - Methyl propyl decene oxytrimethoxy decane and its hydrolysis condensate. Such dispersing agents or dispersing aids are commercially available, for example, modified acrylic copolymers, such as Disperbyk-2000, Disperbyk-2001 (above, BYK), polyurethanes such as Disperbyk-161. , Disperbyk-162, Disperbyk-165, Disperbyk-167, Disperbyk-170, Disperbyk-182 (above BYK), SOLSPERSE 76500 (manufactured by Lubrizol Co., Ltd.), SOLSPERSE 5000, SOLSPERSE 37500, cationic comb type For example, there are SOLSPERSE 24000 (manufactured by Lubrizol Co., Ltd.) and ajisuper PB821 ' aj isuper P B 822 (manufactured by ajinomoto-fine-techno Co., Ltd.). These dispersing agents or dispersing aids can be used alone or in combination 2 More than one kind. When the dispersing agent or the dispersing aid is used, the content of the dispersing agent or the dispersing aid is appropriately adjusted by a combination of the type of the black agent (A) to be used, the type of the dispersing agent, and the like. When the amount of the black agent (A) is 100 parts by mass, it is preferably 100 parts by mass or less, more preferably 0.5 to 100 parts by mass, still more preferably -14 to 201137517 10 to 50 parts by mass. When the content of the dispersant or the dispersing aid is 100 parts by mass or less, a linear radiation sensitive composition having excellent developability can be obtained. Further, the preparation method of the black agent dispersion is, for example, a black agent (A) in a dispersion medium, in the presence of an additive such as a dispersant, using a pulverizer, a rod mill, a bead mill, and a roll mill. A blackening agent dispersion can be prepared by pulverizing and mixing. (B) Polymer having a phenolic hydroxyl group The polymer (B) having a phenolic hydroxyl group is an alkali-soluble polymer when it is developed by an alkali developing solution. The "alkali-soluble" means that when the aqueous solution of 2.38% by mass of tetramethylammonium hydroxide is 1 part by mass, 10 parts by mass or more of the polymer (B) can be dissolved in the aqueous solution. As the polymer (B), for example, a condensate of a compound having a phenolic hydroxyl group and a compound having a fluorenyl group (hereinafter also referred to as "polymer (B1)") can be used. The above-mentioned compound having a phenolic hydroxyl group, for example, phenol, m_methyl hydrazine, p-methyl hydrazine, hydrazine-methyl hydrazine, etc.; 2,5-dimethyl hydrazine, 3,5-dimethyl hydrazine, 3 , xylenols such as 4-xylenol and 2,3-xylenol; m-ethylphenol, ethylidene 〇-ethyl hydrazine, pt-butyl hydrazine, p-octyl, 2, Alkylphenols such as 3,5-trimethylhydrazine; P-methoxyphenol 'm-methoxyphenol' 3,5-dimethoxyphenol, 2-methoxy-4-methyl a phenolic phenol, an m-ethoxy phenol, a p-ethoxy phenol, a propoxy phenol, a P-propoxy phenol, an m-butoxy phenol, a p-butoxy phenol, or the like; a dialkylphenol such as methyl-4-isopropylphenol; m_chloranil, p_

S -15- 201137517 氯酚、〇·氯酚、二羥基聯苯、雙酚A、苯基酚、間苯二酚 、萘酚等之羥基芳香化合物等。此等中,較佳爲甲酚類。 此外,具有酚性羥基之化合物可單獨1種使用或組合2 種以上使用。 前述具有甲醯基之化合物,例如有甲醛、對甲醛、乙 醛、丙醛 '苯甲醛、苯基乙醛、α-苯基丙基醛、β-苯基丙 基醛、〇 -羥基苯甲醛、m -羥基苯甲醛、ρ -羥基苯甲醛、〇-氯苯甲醛、m -氯苯甲醛、P -氯苯甲醛、〇 -硝基苯甲醛、m· 硝基苯甲醛、p-硝基苯甲醛、〇-甲基苯甲醛、m-甲基苯甲 醛、P-甲基苯甲醛、p-乙基苯甲醛、p-n-丁基苯甲醛、呋 喃甲醛、氯乙醛及此等之縮醛物、例如有氯乙醛二乙基縮 醛等。此等中,較佳爲甲醛。 又,具有甲醯基之化合物可單獨1種使用或組合2種以 上使用。 此聚合物(B1)例如可以具有酚性羥基之化合物爲主 成分,在酸性觸媒之存在下,與具有甲醯基之化合物進行 加成縮合反應而製得。 此酸性觸媒例如有鹽酸、硫酸、甲酸、乙酸、草酸等 〇 此等酸性觸媒可單獨1種使用或組合2種以上使用。 此外’前述聚合物(B1)可使用市售之酚醛樹脂、甲 酚醛樹脂等之酚醛樹脂。 前述聚合物(B)可使用含有具有酚性羥基之構造單 位(b 1 )[以下僅稱爲「構造單位(b丨)」]的聚合物(以 -16- 201137517 下也稱爲「聚合物(B2)」)(聚合物(B1)除外)。 前述構造單位(b 1 )例如羥基苯乙烯單位(即、羥基 苯乙稀中之聚合性不飽和鍵進行開裂的單位)、異丙烯基 酣單位(即、異丙烯基酚中之聚合性不飽和鍵進行開裂的 單位)等較佳,更佳爲羥基苯乙烯單位。 可形成構造單位(bl)之單體,例如有ρ·異丙烯基酚 、m-異丙烯基酚、0_異丙烯基酚、p_羥基苯乙烯、m_羥基 苯乙烯、〇-羥基苯乙烯等之含有酚性羥基的化合物。此等 中’較佳爲P -異丙烯基酚、p -羥基苯乙烯。 前述構造單位(b 1 )係例如可由以t- 丁基、縮醛基等 保護酚性羥基之單體所得。所得之聚合物及共聚合物可藉 由公知方法’例如酸觸媒下,進行脫保護而轉變成具有酚 性羥基之構造單位。 前述酚性羥基被保護的單體,例如有ρ-1·甲氧基乙氧 基苯乙烯、P-1-乙氧基乙氧基苯乙烯等之以縮醛基保護之 羥基苯乙烯類、t-丁氧基苯乙烯、t_ 丁氧基羰氧基苯乙烯 '以醯氧基苯乙烯等。 聚合物(B2)可僅含有1種或2種以上之構造單位(bl )° 本發明之前述聚合物(B2)除了前述構造單位(bl) 外,可含有來自其他單體之構造單位(b2)[以下僅稱爲 「構造單位(b2 )」]。 可形成前述構造單位(b 2 )之「其他單體」,例如有 苯乙烯、α-甲基苯乙烯、〇-甲基苯乙烯、m-甲基苯乙烯'S -15- 201137517 Hydroxy aromatic compounds such as chlorophenol, hydrazine chlorophenol, dihydroxybiphenyl, bisphenol A, phenylphenol, resorcinol, naphthol, etc. Among these, cresols are preferred. Further, the compound having a phenolic hydroxyl group may be used alone or in combination of two or more. The aforementioned compound having a methyl group, for example, formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde benzaldehyde, phenylacetaldehyde, α-phenylpropylaldehyde, β-phenylpropylaldehyde, hydrazine-hydroxybenzaldehyde , m-hydroxybenzaldehyde, ρ-hydroxybenzaldehyde, hydrazine-chlorobenzaldehyde, m-chlorobenzaldehyde, P-chlorobenzaldehyde, guanidine-nitrobenzaldehyde, m-nitrobenzaldehyde, p-nitrobenzene Formaldehyde, hydrazine-methylbenzaldehyde, m-methylbenzaldehyde, P-methylbenzaldehyde, p-ethylbenzaldehyde, pn-butylbenzaldehyde, furaldehyde, chloroacetaldehyde, and the like For example, there are chloroacetaldehyde diethyl acetal and the like. Among these, formaldehyde is preferred. Further, the compound having a methyl group may be used alone or in combination of two or more. The polymer (B1) can be obtained, for example, by a compound having a phenolic hydroxyl group as a main component and undergoing an addition condensation reaction with a compound having a methyl group in the presence of an acidic catalyst. The acidic catalyst may be, for example, hydrochloric acid, sulfuric acid, formic acid, acetic acid, oxalic acid or the like. These acidic catalysts may be used alone or in combination of two or more. Further, as the polymer (B1), a commercially available phenol resin such as a phenol resin or a cresol resin can be used. As the polymer (B), a polymer having a structural unit (b 1 ) having a phenolic hydroxyl group (hereinafter simply referred to as "structural unit (b丨)"] can be used (also referred to as "polymer" under -16-201137517 (B2)") (except polymer (B1)). The structural unit (b 1 ) is, for example, a hydroxystyrene unit (i.e., a unit in which a polymerizable unsaturated bond in hydroxystyrene is cleaved), an isopropenyl unit (i.e., a polymerizable unsaturated group in isopropenylphenol) Preferably, the unit for which the bond is cracked is preferably a hydroxystyrene unit. a monomer which can form a structural unit (bl), for example, p-isopropenylphenol, m-isopropenylphenol, 0-isopropenylphenol, p-hydroxystyrene, m-hydroxystyrene, anthracene-hydroxybenzene A compound containing a phenolic hydroxyl group such as ethylene. Among these, 'p-isopropenylphenol, p-hydroxystyrene is preferred. The above structural unit (b 1 ) can be obtained, for example, from a monomer which protects a phenolic hydroxyl group with a t-butyl group, an acetal group or the like. The obtained polymer and copolymer can be converted into a structural unit having a phenolic hydroxyl group by deprotection by a known method such as an acid catalyst. The phenolic hydroxyl group-protected monomer is, for example, an acetal-protected hydroxystyrene such as ρ-1·methoxyethoxystyrene or P-1-ethoxyethoxystyrene. T-butoxystyrene, t-butoxycarbonyloxystyrene' is a nonyloxystyrene or the like. The polymer (B2) may contain only one or two or more structural units (bl). The aforementioned polymer (B2) of the present invention may contain structural units derived from other monomers in addition to the aforementioned structural unit (bl) (b2) ) [The following is only referred to as "structural unit (b2)"]. The "other monomer" of the above structural unit (b 2 ) may be formed, for example, styrene, α-methylstyrene, fluorene-methylstyrene, m-methylstyrene.

S -17- 201137517 p-甲基苯乙烯、〇-甲氧基苯乙烯、m-甲氧基苯乙烯、p-甲 氧基苯乙烯等之苯乙烯類; (甲基)丙烯酸、馬來酸、富馬酸、巴豆酸、中康酸 、檸康酸、衣康酸、馬來酸酐、檸康酸酐等之不飽和羧酸 或彼等之酸酐類; 不飽和羧酸之甲酯、乙酯、η-丙酯、i-丙酯、η-丁酯 、i-丁酯、sec-丁醋、t-丁醋' η-戊酯' η-己醋 '環己醋、 2-羥基乙酯、2-羥基丙酯、3-羥基丙酯、2,2-二甲基-3-羥 基丙酯、苄酯、異莰酯、三環癸酯、1-金剛烷酯等之酯類 (甲基)丙烯腈、馬來腈、富馬腈、巴豆腈、中康腈 、檸康腈、衣康腈等之不飽和腈類; (甲基)丙烯醯胺、巴豆醯胺、馬來醯胺、富馬醯胺 、中康醯胺、檸康醯胺、衣康醯胺等之不飽和醯胺類; 馬來醯亞胺、Ν-苯基馬來醯亞胺、Ν-環己基馬來醯亞 胺等之不飽和醯亞胺類: 雙環[2.2.1]庚-2-烯(降莰烯)、四環[4.4.0.12,5.17’10] 十二-3-烯、環丁烯、環戊烯、環辛烯、二環戊二烯 '三環 [5.2.1.〇2’6]癸烯等之具有脂環族骨架的化合物; Ρ-二乙烯基苯、m-二乙烯基苯、〇_二乙烯基苯、二烯 丙基苯二甲酸酯、乙二醇二(甲基)丙烯酸酯、丙二醇二 (甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、 季戊四醇三(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯 酸醋、聚丙二醇二(甲基)丙烯酸酯;三乙二醇二乙烯醚 18- 201137517 等之聚乙二醇二乙烯醚等之交聯性單體類; (甲基)烯丙醇等之不飽和醇類、N-乙烯基苯胺、乙 烯基吡啶類、N-乙烯基-ε-己內醯胺、N-乙烯基吡咯烷酮 、Ν-乙烯基咪唑、Ν-乙烯基咔唑等。 其中,較佳爲苯乙烯、Ρ-甲氧基苯乙烯。 此外,聚合物(Β2 )可僅含有1種或含有2種以上之構 造單位(b2)。 特別是前述聚合物(B2 )較佳爲由構造單位(b 1 )所 構成,且使用此構造單位(bl)爲提供羥基苯乙烯單位之 單體所得之樹脂。 聚合物(B)較佳爲下述任一之構成者。此時,因絕 緣性、遮光性及密著性可形成優異的絕緣膜。 (1 )具有酚性羥基之化合物與具有甲醯基之化合物 之縮合物、 (2) 具有經基本乙嫌中之聚合性不飽和鍵進f了開裂 之構造單位的聚合物、 (3) 具有酚性羥基之化合物與具有甲醯基之化合物 之縮合物、及含有具有羥基苯乙烯中之聚合性不飽和鍵進 行開裂之構造單位的聚合物者。 此外,聚合物(B )較佳爲玻璃轉化溫度(τ g )超過 0 〇C 者。 前述聚合物(B)之藉由凝膠滲透色譜之聚苯乙烯換 算之重量平均分子量(Mw),從絕緣膜之解像性、熱衝 撃性、耐熱性及殘膜率等的觀點,較佳爲500〜300,000, -19- 201137517 更佳爲600〜150,000,更佳爲1,〇〇〇〜100,000。 聚合物(B )可單獨1種使用或組合2種以上使用。 (C )敏輻射線性酸產生劑 前述酸產生劑(C )係藉由輻射等之照射產生酸的化 合物。酸產生劑(C)因輻射等之照射產生酸的觸媒作用 ,產生後述藉由交聯劑(D )之交聯反應。 酸產生劑(C )例如有鏺鹽化合物、含鹵素化合物、 重氮酮化合物、颯化合物、磺酸酯化合物、磺醯亞胺化合 物、重氮甲烷化合物等。 前述鋤鹽化合物例如有碘鑰鹽、锍鹽、鱗鹽、重氮鑰 鹽、吡啶鑰鹽等。較佳之鎗鹽的具體例有二苯基碘鑰三氟 化甲烷磺酸鹽、二苯基碘鑰對甲苯磺酸鹽、二苯基碘鎗六 氟銻酸鹽、二苯基碘鑰六氟磷酸鹽、二苯基碘鑰四氟砸酸 鹽 '三苯基鏑三氟甲烷磺酸鹽 '三苯基鏑對甲苯磺酸鹽、 三苯基锍六氟銻酸鹽、4-第三丁基苯基·二苯基锍三氟甲 烷磺酸鹽、4 -第三丁基苯基.二苯基鏑對甲苯磺酸鹽、1-( 4,7-二丁氧基-卜萘基)四氫噻吩鑰三氟甲烷磺酸鹽、4-( 苯硫基)苯基一苯基鏡二(五氟(乙基)三氟憐酸鹽等。 前述含鹵素化合物例如有含鹵烷基烴化合物、含鹵烷 基雜環化合物等。較佳之含鹵素化合物之具體例,1,1 〇 -二 溴-η-癸烷、1,1-雙(4-氯苯基)-2,2,2-三氯乙烷、苯基-雙 (三氯甲基)-s-三嗪、4-甲氧基苯基-雙(三氯甲基)-s_ 三嗪、苯乙烯基-雙(三氯甲基)-s-三嗪、萘基-雙(三氯 -20- 201137517 甲基)-s -二嚷、2-[2-(呋喃-2 -基)乙稀基(Ethenyl)]-4,6-雙(三氯甲基)-s-三嗪、2-[2-(5-甲基呋喃-2-基)乙 烯基]-4,6 -雙(三氯甲基)-S -三嗪等之s -三嗓衍生物。 前述重氮酮化合物例如有1,3-二酮-2-重氮化合物、重 氮苯醌化合物、重氮萘醌化合物化合物等,具體例有酚類 之1,2-萘醌二疊氮-4-磺酸酯化合物等。 前述颯化合物例如有β -酮颯化合物、β -磺醯基楓化合 物及此等化合物之α -重氮化合物等,具體例有4 -參苯醯甲 基颯、三甲苯基苯醯甲基碾、雙(苯基磺醯基)甲烷等。 前述磺酸酯化合物例如有烷基磺酸酯類、鹵烷基磺酸 酯類、芳基磺酸酯類、亞胺基磺酸酯類等。更佳之具體例 有苯偶因甲苯磺酸酯 '焦桔酚參三氟甲烷磺酸酯、〇_硝基 苄基三氟甲烷磺酸酯、〇-硝基苄基Ρ-甲苯磺酸酯等。 前述亞胺磺醯化合物之具體例有Ν-(三氟甲基磺醯氧 基)琥珀醯亞胺、Ν-(三氟甲基磺醯氧基)苯二醯亞胺、 Ν-(三氟甲基磺醯氧基)二苯基馬來醯亞胺、Ν-(三氟甲 基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二甲醯亞胺、ν-( 三氟甲基磺醯氧基)萘醯亞胺等。 前述重氮甲烷化合物之具體例有雙(三氟甲基磺醯基 )重氮甲烷、雙(環己基磺醯基)重氮甲烷、雙(苯基磺 醯基)重氮甲烷等。 酸產生劑(C )較佳爲鎗鹽化合物,更佳爲含有羥基 之鍚鹽化合物。 此等酸產生劑(C)可單獨1種使用或組合2種以上使S -17- 201137517 styrenes such as p-methylstyrene, fluorene-methoxystyrene, m-methoxystyrene, p-methoxystyrene; (meth)acrylic acid, maleic acid , fumaric acid, crotonic acid, mesaconic acid, citraconic acid, itaconic acid, maleic anhydride, citraconic anhydride, etc., or their anhydrides; methyl esters and ethyl esters of unsaturated carboxylic acids , η-propyl ester, i-propyl ester, η-butyl ester, i-butyl ester, sec-butyl vinegar, t-butyl vinegar ' η-pentyl ester ' η-hexane vinegar 'cyclohexyl vinegar, 2-hydroxyethyl ester , 2-hydroxypropyl ester, 3-hydroxypropyl ester, 2,2-dimethyl-3-hydroxypropyl ester, benzyl ester, isodecyl ester, tricyclodecyl ester, 1-adamantyl ester, etc. (A Acrylonitrile, maleonitrile, fumaronitrile, crotononitrile, mesocarbonitrile, citracarbonitrile, itacononitrile and other unsaturated nitriles; (methyl) acrylamide, crotonamide, maleamide , unsaturated amides such as fumarine, mesaconamine, cimolamide, itaconamide, etc.; maleic imine, Ν-phenyl maleimide, Ν-cyclohexylma Unsaturated quinone imines such as quinone imines: bicyclo [2.2.1] hept-2-ene (norbornene), tetracyclic [4.4.0.1 2, 5.17'10] Dodec-3-ene, cyclobutene, cyclopentene, cyclooctene, dicyclopentadiene 'tricyclo[5.2.1.〇2'6]decene, etc. a compound of a family skeleton; Ρ-divinylbenzene, m-divinylbenzene, fluorene-divinylbenzene, diallyl phthalate, ethylene glycol di(meth)acrylate, propylene glycol II ( Methyl) acrylate, trimethylolpropane tri(meth) acrylate, pentaerythritol tri(meth) acrylate, polyethylene glycol di(meth) acrylate vinegar, polypropylene glycol di(meth) acrylate; a cross-linking monomer such as polyethylene glycol divinyl ether such as triethylene glycol divinyl ether 18-201137517; an unsaturated alcohol such as (methyl) allyl alcohol, N-vinylaniline, or vinyl Pyridines, N-vinyl-ε-caprolactam, N-vinylpyrrolidone, anthracene-vinylimidazole, anthracene-vinylcarbazole, and the like. Among them, styrene and fluorene-methoxystyrene are preferred. Further, the polymer (Β2) may contain only one type or two or more types of structural units (b2). Particularly, the polymer (B2) is preferably composed of a structural unit (b 1 ), and the structural unit (bl) is a resin obtained by providing a monomer of a hydroxystyrene unit. The polymer (B) is preferably one of the following constituents. At this time, an excellent insulating film can be formed due to the insulating property, the light blocking property, and the adhesion. (1) a condensate of a compound having a phenolic hydroxyl group and a compound having a fluorenyl group, (2) a polymer having a structural unit which is cleaved by a polymerizable unsaturated bond in a basic state, (3) having A condensate of a compound having a phenolic hydroxyl group and a compound having a fluorenyl group, and a polymer having a structural unit having a polymerizable unsaturated bond in hydroxystyrene to be cracked. Further, the polymer (B) is preferably one having a glass transition temperature (τ g ) exceeding 0 〇C. The weight average molecular weight (Mw) in terms of polystyrene by gel permeation chromatography of the polymer (B) is preferably from the viewpoints of resolution, thermal repellency, heat resistance and residual film ratio of the insulating film. For 500~300,000, -19-201137517 more preferably 600~150,000, more preferably 1, 〇〇〇~100,000. The polymer (B) may be used alone or in combination of two or more. (C) sensitizing radiation linear acid generator The foregoing acid generator (C) is a compound which generates an acid by irradiation with radiation or the like. The acid generator (C) acts as a catalyst for generating an acid by irradiation of radiation or the like, and produces a crosslinking reaction by a crosslinking agent (D) which will be described later. The acid generator (C) is, for example, an onium salt compound, a halogen-containing compound, a diazoketone compound, an anthraquinone compound, a sulfonate compound, a sulfonimide compound, a diazomethane compound or the like. The onium salt compound may, for example, be an iodine salt, a phosphonium salt, a scale salt, a diazo salt, a pyridyl salt or the like. Specific examples of preferred gun salts are diphenyl iodide trifluoromethanesulfonate, diphenyl iodide p-toluenesulfonate, diphenyl iodide hexafluoroantimonate, diphenyl iodine hexafluorophosphate Phosphate, diphenyl iodine tetrafluoro citrate 'triphenyl sulfonium trifluoromethane sulfonate 'triphenyl sulfonium p-toluene sulfonate, triphenyl sulfonium hexafluoroantimonate, 4-third butyl Phenyldiphenylphosphonium trifluoromethanesulfonate, 4-tert-butylphenyl. diphenylphosphonium p-toluenesulfonate, 1-(4,7-dibutoxy-buphthyl)tetrahydrogen Thiophene trifluoromethanesulfonate, 4-(phenylthio)phenyl-phenylphenanthroline (pentafluoro(ethyl)trifluoroacetate, etc. The halogen-containing compound is, for example, a halogen-containing alkyl hydrocarbon compound, A halogen-containing alkyl heterocyclic compound, etc. A preferred example of a halogen-containing compound, 1,1 〇-dibromo-η-decane, 1,1-bis(4-chlorophenyl)-2,2,2- Trichloroethane, phenyl-bis(trichloromethyl)-s-triazine, 4-methoxyphenyl-bis(trichloromethyl)-s-triazine, styryl-bis(trichloromethane) -s-triazine, naphthyl-bis(trichloro-20-201137517 methyl)-s-diindole, 2-[2-(furan-2-yl) Ethenyl]-4,6-bis(trichloromethyl)-s-triazine, 2-[2-(5-methylfuran-2-yl)vinyl]-4,6- An s-triazine derivative such as bis(trichloromethyl)-S-triazine. The above diazoketone compound is, for example, a 1,3-diketone-2-diazo compound, a diazonium phthalide compound, or a diazonaphthalene compound. Examples of the quinone compound compound and the like include a 1,2-naphthoquinonediazide-4-sulfonate compound of a phenol type, etc. The above hydrazine compound is, for example, a β-ketoxime compound, a β-sulfonyl maple compound, and the like. Specific examples of the α-diazo compound and the like of the compound include 4-parabenylmethylhydrazine, tricresylbenzoquinone methyl milling, bis(phenylsulfonyl)methane, etc. The aforementioned sulfonic acid ester compound is, for example, an alkyl group. Sulfonic acid esters, haloalkyl sulfonates, aryl sulfonates, imino sulfonates, etc. More preferred examples are benzoin tosylate 'stea phenol trifluoromethane sulfonate Acid ester, hydrazine-nitrobenzyl trifluoromethane sulfonate, hydrazine-nitrobenzyl hydrazine-toluene sulfonate, etc. Specific examples of the aforementioned imine sulfonium compound are Ν-(trifluoromethylsulfonate) Alkyl imine, hydrazine-(trifluoromethylsulfonate Benzene diimide, Ν-(trifluoromethylsulfonyloxy)diphenylmaleimide, fluorenyl-(trifluoromethylsulfonyloxy)bicyclo[2.2.1]hept-5- Alkene-2,3-dimethylimine, ν-(trifluoromethylsulfonyloxy)naphthylimine, etc. Specific examples of the above diazomethane compound are bis(trifluoromethylsulfonyl) Nitromethane, bis(cyclohexylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, etc. The acid generator (C) is preferably a gun salt compound, more preferably a hydroxyl group-containing phosphonium salt compound. These acid generators (C) may be used alone or in combination of two or more.

S -21 - 201137517 用。 酸產生劑(c )之含量從確保組成物之感度、解 、圖型形狀等的觀點,聚合物(B)爲100質量份(但 配後述之酚性低分子化合物時,聚合物(B)與酚性 子化合物之合計爲100質量份)時,較佳爲〇.1〜1〇質 ,更佳爲0.3〜5質量份。酸產生劑(c)之含量爲〇.1~ 量份時’在感度、圖型形狀方面較佳》 (D)藉由酸之作用進行交聯反應的交聯劑 前述交聯劑(D )係酸之作用進行交聯反應者。 而言,藉由酸進行反應,交聯劑彼此或與其他成分( 聚合物(B))進行交聯反應,形成3次元交聯構造者 言之’ 「進行交聯反應」係指形成離子鍵或共價鍵等 的化學鍵結。 此交聯劑(D )例如有分子中具有2個以上之烷醚 胺基的化合物(d 1 )(以下稱爲「含胺基化合物(d 1 );含環氧乙烷環化合物(d2):含環氧丙烷環化合 d3);含異氰酸酯基化合物(包括嵌段化者);0_羥 甲醛等之含醛基之酚化合物;2,6-雙(羥基甲基)-P-等之含有羥甲基之酚化合物等。 此等中,使用選自含胺基化合物(dl)及含環氧 環化合物(d2 )之至少1種的化合物較佳。此等中, 含有羥甲基之化合物較佳》 此等交聯劑(D)可配合各成分之調配組成等, 像度 是調 低分 量份 10質 具體 例如 。換 之新 化之 )J 物( 基苯 甲酚 乙烷 使用 來適 -22- 201137517 當選擇使用。交聯劑(D )可單獨1種使用或組合2種以上 使用。 前述含胺基化合物(d 1 )例如有(聚)羥甲基化三聚 氰胺、(聚)羥甲基化甘脲、(聚)羥甲基化苯代三聚氰 胺、(聚)羥甲基化化脲等之氮化合物中之活性羥甲基( CH2OH基)之全部或一部份(至少2個)經烷醚化的化合 物。其中,構成烷醚的烷基,例如有甲基、乙基或丁基, 此等可彼此相同或相異。未經烷醚化的羥甲基係一分子內 可自行縮合,或二分子間進行縮合,結果也可形成低聚物 成分。具體而言,可使用六甲氧基甲基三聚氰胺、六丁氧 基甲基三聚氰胺、四甲氧基甲基甘脲、四丁氧基甲基甘脲 等。 敏輻射線性組成物中具有含胺基化合物(d 1 ),可得 到解像度及耐藥品性優異的絕緣膜,故較佳。 前述含環氧乙烷環化合物(d2)只要是分子內含有環 氧乙烷環即可,例如有苯酚醛型環氧樹脂、甲酚醛型環氧 樹脂、雙酚型環氧樹脂、三酚型環氧樹脂、四酚型環氧樹 脂、酚-二甲苯型環氧樹脂、萘酚-二甲苯型環氧樹脂、酚_ 萘酚型環氧樹脂、酚-二環戊二烯型環氧樹脂、脂環式環 氧樹脂、脂肪族環氧樹脂等之環氧樹脂;間苯二酚二縮水 甘油醚、季戊四醇縮水甘油醚、三羥甲基丙烷聚縮水甘油 醚、甘油聚縮水甘油醚、苯基縮水甘油醚、新戊二醇二縮 水甘油醚、乙二醇二縮水甘油醚、聚乙二醇二縮水甘油醚 、丙二醇二縮水甘油醚、聚丙二醇二縮水甘油醚、1,6-己S -21 - 201137517 used. The content of the acid generator (c) is 100 parts by mass based on the viewpoint of the sensitivity, the solution, the shape of the pattern, and the like of the composition (but when the phenolic low molecular compound described later is used, the polymer (B) When the total amount of the phenolic compound is 100 parts by mass, it is preferably 〇1 to 1 〇, more preferably 0.3 to 5 parts by mass. When the content of the acid generator (c) is 〇.1~ parts by mass, it is preferred in terms of sensitivity and pattern shape. (D) Crosslinking agent which crosslinks by the action of an acid. The role of acid is to carry out the crosslinking reaction. In the reaction, the crosslinking agent reacts with each other or with other components (polymer (B)) to form a three-dimensional cross-linking structure, and the "cross-linking reaction" means forming an ionic bond. Or a chemical bond such as a covalent bond. The crosslinking agent (D) is, for example, a compound (d 1 ) having two or more alkyl ether amine groups in the molecule (hereinafter referred to as "amine-containing compound (d 1 ); oxirane-containing compound (d2)) : a propylene oxide-containing compound (d3); an isocyanate-containing compound (including a blocker); an aldehyde group-containing phenol compound such as 0-hydroxyformaldehyde; 2,6-bis(hydroxymethyl)-P-, etc. A phenolic compound containing a methylol group, etc. Among these, a compound selected from at least one selected from the group consisting of an amine group-containing compound (dl) and an epoxy ring-containing compound (d2) is preferred. Among them, a hydroxymethyl group is used. Preferably, the crosslinking agent (D) can be blended with the composition of each component, etc., and the image is a component of a lowering weight. For example, a new material is used.适-22- 201137517 When selected, the crosslinking agent (D) may be used alone or in combination of two or more. The above-mentioned amine-containing compound (d 1 ) is, for example, (poly)methylolated melamine, (poly) Among the nitrogen compounds such as methylolated glycoluril, (poly)methylolated benzene melamine, (poly)methylolated urea An alkyl etherified compound of all or a part (at least 2) of an active methylol group (CH2OH group), wherein the alkyl group constituting the alkyl ether, for example, a methyl group, an ethyl group or a butyl group, may be mutually The same or different. The methylol group which has not been alkylated can be self-condensed in one molecule or condensed between two molecules, and as a result, an oligomer component can be formed. Specifically, hexamethoxymethylmelamine can be used. , hexabutoxymethyl melamine, tetramethoxymethyl glycoluril, tetrabutoxymethyl glycoluril, etc. The linear composition of the sensitive radiation has an amine group-containing compound (d 1 ), which can provide resolution and resistance to drugs. The oxirane-containing compound (d2) may be an oxirane ring, for example, a phenolic epoxy resin or a cresol epoxy resin. Bisphenol type epoxy resin, trisphenol type epoxy resin, tetraphenol type epoxy resin, phenol-xylene type epoxy resin, naphthol-xylene type epoxy resin, phenol_naphthol type epoxy resin, phenol - Dicyclopentadiene type epoxy resin, alicyclic epoxy resin, aliphatic ring Epoxy resin such as oxyresin; resorcinol diglycidyl ether, pentaerythritol glycidyl ether, trimethylolpropane polyglycidyl ether, glycerol polyglycidyl ether, phenyl glycidyl ether, neopentyl glycol condensate Glycerol ether, ethylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, 1,6-hexyl

S -23- 201137517 二醇二縮水甘油醚、山梨糖醇聚縮水甘油醚等之多官能縮 水甘油基化合物等。 具有含環氧乙烷環化合物(d2)可得到解像度及耐藥 品性優異的絕緣膜,故較佳。 交聯劑(D)較佳爲含胺基化合物(dl)、含環氧乙 烷環化合物(d2 ),可併用含胺基化合物(d 1 )與含環氧 乙烷環化合物(d2 )。倂用時,合計爲100質量%時,含環 氧乙烷環化合物(d2 )較佳爲50質量%以下,更佳爲5~40 質量%。以這種質量比例倂用時,不影響高解像性,且可 形成耐藥品性優異的絕緣膜,故較佳。 交聯劑(D)之含量係聚合物(B)爲100質量份(但 是調配後述之酚性低分子化合物時,聚合物(B )與酚性 低分子化合物之合計爲100質量份)時,較佳爲1〜1〇〇質量 份,更佳爲5〜50質量份。此交聯劑(D )之含量爲1〜1〇〇質 量份時,硬化反應充分進行,形成之絕緣膜係高解像度, 且具有良好的圖型形狀,且耐熱性、電絕緣性等優異,故 較佳。 (E )交聯聚合物粒子 本發明之敏輻射線性組成物可再含有交聯聚合物粒子 。含有交聯聚合物粒子時,因絕緣性及密著性可形成優異 的絕緣膜,故較佳, 前述交聯聚合物粒子係使用具有2個以上之不飽和聚 合性基的交聯性單體(以下僅稱爲「交聯性單體」)與選 -24- 201137517 擇使交聯聚合物粒子之Tg成爲〇 〇C以下之1種或2種以上之 「其他單體j進行共聚合的共聚合物。特別是倂用2種以 上之其他單體’且其他單體中之至少1種爲具有羧基、環 氧基、胺基、異氰酸酯基、羥基等之聚合性基以外的官能 基者更佳。 此交聯聚合物粒子之聚苯乙烯換算之重量平均分子量 通常爲100萬以上。 此外,此交聯聚合物粒子爲20質量%之乳酸乙酯溶液 時之溶液之霧度(haze)通常爲8 %以上。此外,前述聚合 物(B )之2 0質量%之乳酸乙酯溶液之霧度通常爲〇 . 5 %以 下。 前述交聯性單體例如有二乙烯基苯、二烯丙基苯二甲 酸、乙二醇二(甲基)丙烯酸酯、丙二醇二(甲基)丙烯 酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三( 甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、聚丙二 醇二(甲基)丙烯酸酯等之具有複數之聚合性不飽和基的 化合物。此等中,較佳爲二乙烯基苯。 前述其他單體例如有丁二烯、異戊二烯、二甲基丁二 烯、氯戊二烯、1,3-戊二烯等之二烯化合物;(甲基)丙 烯腈、α-氯丙烯腈、α-氯甲基丙烯腈、α-甲氧基丙烯腈、 α-乙氧基丙烯腈 '巴豆酸腈、桂皮酸腈、衣康酸二腈、馬 來酸二腈、富馬酸二腈等之不飽和腈化合物類;(甲基) 丙烯醯胺、Ν,Ν’-亞甲基雙(甲基)丙烯醯胺、Ν,Ν’-伸乙 基雙(甲基)丙烯醯胺、Ν,Ν’-六亞甲基雙(甲基)丙烯S -23- 201137517 A polyfunctional glycidyl compound such as a diol diglycidyl ether or a sorbitol polyglycidyl ether. It is preferred to have an epoxide-containing compound (d2) which is excellent in resolution and drug resistance. The crosslinking agent (D) is preferably an amine group-containing compound (dl) or an epoxy group-containing compound (d2), and an amine group-containing compound (d 1 ) and an epoxide group-containing compound (d2) may be used in combination. When the total amount is 100% by mass, the epoxy group-containing compound (d2) is preferably 50% by mass or less, more preferably 5 to 40% by mass. When it is used in such a mass ratio, it is preferable because it does not affect high resolution and can form an insulating film excellent in chemical resistance. When the content of the crosslinking agent (D) is 100 parts by mass of the polymer (B) (when the phenolic low molecular compound described later is blended, when the total of the polymer (B) and the phenolic low molecular compound is 100 parts by mass), It is preferably 1 to 1 part by mass, more preferably 5 to 50 parts by mass. When the content of the crosslinking agent (D) is 1 to 1 part by mass, the curing reaction proceeds sufficiently, and the formed insulating film has a high resolution, and has a good pattern shape, and is excellent in heat resistance and electrical insulating properties. Therefore, it is better. (E) Crosslinked polymer particles The sensitive radiation linear composition of the present invention may further contain crosslinked polymer particles. When the crosslinked polymer particles are contained, an excellent insulating film can be formed by the insulating property and the adhesiveness. Therefore, it is preferred to use a crosslinkable monomer having two or more unsaturated polymerizable groups in the crosslinked polymer particles. (hereinafter, simply referred to as "crosslinkable monomer") and selected from -24 to 201137517, the Tg of the crosslinked polymer particles is one or more of 〇〇C or less, and the other monomer j is copolymerized. In particular, at least one of the other monomers is a functional group other than a polymerizable group such as a carboxyl group, an epoxy group, an amine group, an isocyanate group or a hydroxyl group. More preferably, the crosslinked polymer particles have a polystyrene-equivalent weight average molecular weight of usually 1,000,000 or more. Further, the haze of the solution when the crosslinked polymer particles are 20% by mass of an ethyl lactate solution The haze of the 50% by mass of the ethyl lactate solution of the polymer (B) is usually 5% or less. The crosslinkable monomer is, for example, divinylbenzene or diene. Propyl phthalic acid, ethylene glycol di(meth) propylene Ester, propylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, polyethylene glycol di(meth)acrylate, polypropylene glycol di(a) a compound having a plurality of polymerizable unsaturated groups, such as an acrylate, etc. Among them, divinylbenzene is preferred. The other monomers mentioned above are, for example, butadiene, isoprene, and dimethylbutadiene. a diene compound such as chloropentadiene or 1,3-pentadiene; (meth)acrylonitrile, α-chloroacrylonitrile, α-chloromethylacrylonitrile, α-methoxyacrylonitrile, α- An unsaturated nitrile compound such as ethoxy acrylonitrile 'crotonic acid nitrile, cinnamic acid nitrile, itaconic acid dinitrile, maleic acid dinitrile or fumaric acid dinitrile; (meth) acrylamide, hydrazine, hydrazine '-Methylene bis(methyl) acrylamide, hydrazine, Ν'-extended ethyl bis(methyl) acrylamide, hydrazine, Ν'-hexamethylene bis(methyl) propylene

S -25- 201137517 醯胺、N-羥基甲基(甲基)丙烯醯胺、n-( 2-羥基乙基) (甲基)丙烯醯胺、Ν,Ν-雙(2-羥基乙基)(甲基)丙烯 醯胺、巴豆酸醯胺、桂皮酸醯胺等之不飽和醯胺類;(甲 基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸 丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸己酯、(甲 基)丙烯酸月桂酯、聚乙二醇(甲基)丙烯酸酯、聚丙二 醇(甲基)丙烯酸酯等之(甲基)丙烯酸酯化合物;苯乙 烯、α-甲基苯乙烯、〇·甲氧基苯乙烯、ρ·羥基苯乙烯' ρ_ 異丙烯基酚等之芳香族乙烯基化合物;雙酚Α之二縮水甘 油醚、乙二醇之二縮水甘油醚等與(甲基)丙烯酸、羥基 烷基(甲基)丙烯酸酯等之反應所得之環氧基(甲基)丙 烯酸酯類、羥基烷基(甲基)丙烯酸酯與聚異氰酸酯之反 應所得之胺基甲酸酯(甲基)丙烯酸酯類、縮水甘油基( 甲基)丙烯酸酯、(甲基)烯丙基縮水甘油醚等之含環氧 基之不飽和化合物;(甲基)丙烯酸、衣康酸、琥珀酸- β-(甲基)丙烯氧基乙酯、馬來酸-β-(甲基)丙烯氧基乙酯 、苯二甲酸-β-(甲基)丙烯氧基乙酯、六氫苯二甲酸-β_ (甲基)丙烯氧基乙酯等之不飽和酸化合物;二甲基胺基 (甲基)丙烯酸酯、二乙基胺基(甲基)丙烯酸酯等之含 胺基之不飽和化合物;(甲基)丙烯醯胺、二甲基(甲基 )丙烯醯胺等之含醯胺基之不飽和化合物:羥基乙基(甲 基)丙烯酸酯、羥基丙基(甲基)丙烯酸酯、羥基丁基( 甲基)丙烯酸酯等之含羥基之不飽和化合物等。 此等之其他單體中,較佳爲丁二烯、異戊二烯、二甲 -26- 201137517 基丁二烯、氯戊二烯、^卜戊二烯等之二烯化合物、異戊 —烯、(甲基)丙烯腈、(甲基)丙稀酸院酯類、苯乙嫌 ' P-經基苯乙烯、P-異丙烯基酚、縮水甘油基(甲基)丙 _酸酯、.(甲基)丙烯酸、羥基烷基(甲基)丙烯酸酯類 等。 製造交聯聚合物粒子時之前述交聯性單體的使用量係 當共聚合用之單體之合計爲100質量%時,較佳爲^20質量 %,更佳爲2~1 〇質量%。 此外’製造交聯聚合物粒子時,以前述二烯化合物( 特別是丁二烯)作爲其他單體使用時,二烯化合物之使用 量係當共聚合用之單體之合計爲1〇〇質量%時,較佳爲 20〜80質量% ’更佳爲3〇〜7〇質量%。二烯化合物之使用量 爲20〜80質量%時,交聯聚合物粒子成爲橡膠狀之軟微粒子 ’可防止形成之絕緣膜等的硬化物產生龜裂,可形成耐久 性更優異的絕緣膜等。 又’交聯聚合物粒子之平均粒徑通常爲30〜500nm,較 佳爲40〜2〇〇nm,更佳爲50〜l2〇nm。此交聯聚合物粒子之 粒徑之控制方法,例如藉由乳化聚合合成交聯聚合物粒子 時’藉由使用之乳化劑的量控制乳化聚合中之微胞( micelle)的數目,可調整粒徑。此外,交聯聚合物粒子之 平均粒徑係使用光散射流動分布測定裝置(大塚電子公司 製、型式「LPA-3000」),依據常法稀釋交聯聚合物粒子 之分散液,然後進行量測的値》 此等之交聯聚合物粒子可單獨1種使用或組合2種以上S -25- 201137517 decylamine, N-hydroxymethyl (meth) acrylamide, n-(2-hydroxyethyl) (meth) acrylamide, hydrazine, hydrazine-bis(2-hydroxyethyl) (Methyl) acrylamide, ethyl crotonate, decyl cinnamate, etc.; ethyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, (Meth) acrylate such as butyl methacrylate, hexyl (meth) acrylate, lauryl (meth) acrylate, polyethylene glycol (meth) acrylate or polypropylene glycol (meth) acrylate a compound; an aromatic vinyl compound such as styrene, α-methylstyrene, anthracene methoxystyrene, ρ·hydroxystyrene' ρ_isopropenylphenol; bisphenolphthalein diglycidyl ether, ethylene Epoxy (meth) acrylates, hydroxyalkyl (meth) acrylates and polycondensates obtained by reacting dimethyl diglycidyl ether with (meth)acrylic acid, hydroxyalkyl (meth) acrylate or the like Urethane (meth) acrylates, glycidyl groups obtained by the reaction of isocyanates An epoxy group-containing unsaturated compound such as acrylate or (meth)allyl glycidyl ether; (meth)acrylic acid, itaconic acid, and succinic acid-β-(meth)acryloxyethyl ester , β-(meth)acryloxyethyl maleate, β-(meth)acryloxyethyl sulfate, hexahydrophthalic acid-β_(meth)acryloxyethyl ester, etc. An unsaturated acid compound; an amino group-containing unsaturated compound such as dimethylamino (meth) acrylate or diethylamino (meth) acrylate; (meth) acrylamide, dimethyl An unsaturated amino group-containing compound such as (meth)acrylamide: hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, etc. A hydroxyl group unsaturated compound or the like. Among these other monomers, preferred are butadiene, isoprene, diene compounds such as dimethyl-26-201137517-butadiene, chloropentadiene, and pentadiene, and isoprene- Alkene, (meth)acrylonitrile, (meth)acrylic acid esters, phenylethylene, 'P-pyridylstyrene, P-isopropenylphenol, glycidyl (meth)propionate, (Meth)acrylic acid, hydroxyalkyl (meth) acrylate, and the like. When the crosslinked monomer is used in the production of the crosslinked polymer particles, when the total amount of the monomers for copolymerization is 100% by mass, it is preferably 20% by mass, more preferably 2 to 1% by mass. . Further, when the crosslinked polymer particles are produced, when the above diene compound (particularly butadiene) is used as the other monomer, the amount of the diene compound used is 1 〇〇 mass of the monomers for copolymerization. When % is used, it is preferably 20 to 80% by mass 'more preferably 3 to 7 % by mass. When the amount of the diene compound to be used is from 20 to 80% by mass, the crosslinked polymer particles become rubbery soft fine particles, which prevent cracking of the cured product such as the insulating film formed, and can form an insulating film having excellent durability. . Further, the average particle diameter of the crosslinked polymer particles is usually from 30 to 500 nm, preferably from 40 to 2 nm, more preferably from 50 to 12 nm. The method for controlling the particle size of the crosslinked polymer particles, for example, when the crosslinked polymer particles are synthesized by emulsion polymerization, 'the number of micelles in the emulsion polymerization is controlled by the amount of the emulsifier used, and the particles can be adjusted. path. In addition, the average particle diameter of the crosslinked polymer particles is measured by a light scattering flow distribution measuring apparatus (manufactured by Otsuka Electronics Co., Ltd., model "LPA-3000"), and the dispersion of the crosslinked polymer particles is diluted according to a usual method, and then measured. The crosslinked polymer particles of these may be used alone or in combination of two or more.

S -27- 201137517 使用。 本發明之敏輻射線性組成物中之交聯聚合物粒子的含 量係聚合物(B )爲1 〇〇質量份(但是調配後述之酚性低分 子化合物時,聚合物(B)與酚性低分子化合物之合計爲 100質量份)時,較佳爲0.5〜50質量份,更佳爲1〜30質量 份。交聯聚合物粒子的含量爲0.5〜50質量份時,因絕緣性 及密著性可形成優異的絕緣膜。此外,與其他成分之相溶 性或分散性優異,可提高形成之絕緣膜等的耐熱性等。 (F )其他的添加劑 本發明之敏輻射線性組成物中,必要時可在不損及本 發明效果之範圍內含有其他的添加劑。前述其他的添加劑 ,例如有酚性低分子化合物、密著助劑、增感劑、抑制劑 、平坦劑、界面活性劑 '氧化防止劑、紫外線吸收劑、凝 集防止劑等。 藉由使用前述酚性低分子化合物,可提高敏輻射線性 組成物之感度及解像度。前述酚性低分子化合物例如有 4,4’-{1-[4-[2- ( 4-經基苯基)-2-丙基]苯基]亞乙基( 611^1丨(161^)}雙酚、4,4’-{1-[4-[1-(4-羥基苯基)-1-甲基 乙基]苯基]亞乙基}雙酚、4,4’ -二羥基二苯基甲院、4,4,_ 二羥基二苯基醚、三(4-羥基苯基)甲烷、丨,丨-雙(4_溼 基苯基)-1-苯基乙院、三(4 -經基苯基)乙院、ι,3_雙[ι_ (4 -經基本基)-1-甲基乙基]苯、I,4·雙[1- ( 4_經基苯基 )-1-甲基乙基]苯、4,6-雙[1-(4-羥基苯基)-i_甲基乙基 -28 - 201137517 ]-l,3-二羥基苯、ι,ΐ-雙(4-羥基苯基)- ( 4-羥基 苯基)-1-甲基乙基]苯基]乙烷、1,1,2,2-四(心羥基苯基 )乙烷等。此等之酚性低分子化合物可單獨1種使用或組 合2種以上使用。 此酚性低分子化合物之調配量係前述聚合物(B)爲 100質量份時,較佳爲40質量份以下,更佳爲質量份 〇 使用前述密著助劑可提高絕緣膜與基板之密著性。前 述密著助劑例如有具有羧基、甲基丙烯醯基、異氰酸酯基 、環氧基等之反應性取代基的官能性矽烷偶合劑。具體而 言’例如有三甲氧基甲矽烷基苯甲酸、γ-甲基丙烯氧基丙 基三甲氧基矽烷、乙烯基乙醯氧基矽烷、乙烯基三甲氧基 矽烷、γ-異氰酸酯丙基三乙氧基矽烷、γ_環氧丙氧基丙基 三甲氧基矽烷、β- ( 3,4-環氧基環己基)乙基三甲氧基矽 烷、1,3,5-Ν-三(三甲氧基甲矽烷基丙基)三聚異氰酸酯 等。此等密著助劑可單獨1種使用或組合2種以上使用。 此密著助劑之含量係聚合物(Β)爲100質量份(但是 調配後述之酚性低分子化合物時,聚合物(Β )與酚性低 分子化合物之合計爲100質量份)時,較佳爲10質量份以 下,更佳爲0.2~10質量份,更佳爲0.5~8質量份。 本發明之敏輻射線性組成物較佳爲不含前述黑色劑( Α)以外之粒子或金屬化合物粒子。含有此等之金屬粒子 或金屬化合物粒子時,有時可能無法得到充分的絕緣性》 -29- 201137517 (G )溶劑 本發明之敏輻射線性組成物通常係前述各成分溶解或 分散於溶劑所成的組成物。 此溶劑例如有烷二醇單烷醚、烷二醇單烷醚乙酸酯、 其他的醚化合物、酮化合物、乳酸烷酯、其他之酯化合物 、芳香族烴、醯胺化合物、內酯化合物等。此等可單獨1 種使用或組合2種以上使用。 烷二醇單烷醚例如有乙二醇單甲醚、乙二醇單乙醚、 乙二醇單-η -丙酸、乙二醇單-η -丁醆 '二乙二醇單甲酸、 二乙二醇單乙醆、二乙二醇單-η -丙醚、二乙二醇單-卜丁 醱、二乙一醇單甲醒、二乙二醇單乙酸、丙二醇單甲醚、 丙一醇單乙酸、丙一醇單-η -丙酸、丙二醇單_η_ 丁酸、二 丙二醇單甲醚、二丙二醇單乙醚、二丙二醇單-η_丙醚、二 丙一醇單- η-丁醚、二丙二醇單甲醚、三丙二醇單乙醚等。 則述院一醇單院醚乙酸醋例如有乙二醇單甲醚乙酸醋 、乙二醇單乙醚乙酸酯、二乙二醇單甲酸乙酸醋、二乙二 醇單乙醒乙酸酯、丙—醇單甲醚乙酸酯 '丙二醇單乙醚乙 酸酯等》 其他的醚化合物例如有二乙二醇二甲酸、二乙二醇單 乙醚、一乙—醇甲基乙醚、二乙二醇二乙醚、四氫呋喃等 則述陋化口物例如有甲基乙酮 '甲基_η_戊酮、環己酮 、2-庚酮、3-庚酮等。 前述乳酸院醋例如有乳酸甲酯、乳酸乙酯、乳酸^丙 -30- 201137517 、乳酸異丁酯等。S -27- 201137517 used. The content of the crosslinked polymer particles in the linear composition for sensitive radiation of the present invention is 1 part by mass of the polymer (B) (but when the phenolic low molecular compound described later is blended, the polymer (B) and the phenolic property are low. When the total of the molecular compound is 100 parts by mass, it is preferably from 0.5 to 50 parts by mass, more preferably from 1 to 30 parts by mass. When the content of the crosslinked polymer particles is from 0.5 to 50 parts by mass, an excellent insulating film can be formed by insulation and adhesion. Further, it is excellent in compatibility or dispersibility with other components, and can improve heat resistance and the like of the formed insulating film or the like. (F) Other additives The sensitive radiation linear composition of the present invention may contain other additives as necessary within the range which does not impair the effects of the present invention. The other additives include, for example, a phenolic low molecular compound, a adhesion aid, a sensitizer, an inhibitor, a flat agent, a surfactant, an oxidation inhibitor, an ultraviolet absorber, and a coagulation inhibitor. By using the aforementioned phenolic low molecular compound, the sensitivity and resolution of the linear composition of the radiation sensitive radiation can be improved. The aforementioned phenolic low molecular compound is, for example, 4,4'-{1-[4-[2-(4-phenylphenyl)-2-propyl]phenyl]ethylene (611^1丨(161^) )}bisphenol, 4,4'-{1-[4-[1-(4-hydroxyphenyl)-1-methylethyl]phenyl]ethylidene}bisphenol, 4,4'-di Hydroxydiphenylmethyl, 4,4,-dihydroxydiphenyl ether, tris(4-hydroxyphenyl)methane, anthracene, fluorene-bis(4-hydrylphenyl)-1-phenyl Tris(4-phenyl)phenyl, ι, 3_bis[ι_(4-amino)-1-methylethyl]benzene, I,4·bis[1-(4-diphenyl) 1,-1-methylethyl]benzene, 4,6-bis[1-(4-hydroxyphenyl)-i-methylethyl-28 - 201137517 ]-l,3-dihydroxybenzene, ι, Ϊ́-bis(4-hydroxyphenyl)-(4-hydroxyphenyl)-1-methylethyl]phenyl]ethane, 1,1,2,2-tetrakis (cardiohydroxyphenyl)ethane, etc. The phenolic low molecular weight compound may be used alone or in combination of two or more. The phenolic low molecular weight compound is preferably used in an amount of 40 parts by mass or less, preferably 40 parts by mass or less, based on 100 parts by mass of the polymer (B). More preferably, the above-mentioned adhesion aid is used for the mass separation to improve the adhesion between the insulating film and the substrate. The adhesion promoter may, for example, be a functional decane coupling agent having a reactive substituent such as a carboxyl group, a methacryl group, an isocyanate group or an epoxy group. Specifically, for example, trimethoxymethyl decyl benzoic acid, γ-Methoxypropoxypropyltrimethoxydecane, vinyl ethoxy decane, vinyl trimethoxy decane, γ-isocyanate propyl triethoxy decane, γ-glycidoxypropyl trimethyl Oxydecane, β-(3,4-epoxycyclohexyl)ethyltrimethoxynonane, 1,3,5-fluorene-tris(trimethoxymethylidenepropyl)trimeric isocyanate, etc. The adhesion promoter may be used alone or in combination of two or more. The content of the adhesion promoter is 100 parts by mass of the polymer (however, when the phenolic low molecular compound described later is blended, the polymer (Β) When the total amount of the phenolic low molecular compound is 100 parts by mass, it is preferably 10 parts by mass or less, more preferably 0.2 to 10 parts by mass, still more preferably 0.5 to 8 parts by mass. It is not necessary to contain particles or metal compound particles other than the above black agent (Α). In the case of metal particles or metal compound particles, sufficient insulating properties may not be obtained. -29- 201137517 (G) Solvent The sensitive radiation linear composition of the present invention is usually composed of the above components dissolved or dispersed in a solvent. The solvent is, for example, an alkanediol monoalkyl ether, an alkylene glycol monoalkyl ether acetate, other ether compounds, a ketone compound, an alkyl lactate, other ester compounds, an aromatic hydrocarbon, a guanamine compound, a lactone. Compounds, etc. These may be used alone or in combination of two or more. The alkanediol monoalkyl ethers are, for example, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-η-propionic acid, ethylene glycol mono-n-butanthene diethylene glycol monocarboxylic acid, diethyl Glycol monoethyl hydrazine, diethylene glycol mono-η-propyl ether, diethylene glycol mono-b-butyl hydrazine, diethylene glycol monomethyl ketone, diethylene glycol monoacetic acid, propylene glycol monomethyl ether, propanol mono Acetic acid, propanol mono-η-propionic acid, propylene glycol mono-n-butyric acid, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol mono-η-propyl ether, dipropanol mono-η-butyl ether, Dipropylene glycol monomethyl ether, tripropylene glycol monoethyl ether, and the like. The alcoholic vinegar of a single alcohol in the hospital is, for example, ethylene glycol monomethyl ether acetate vinegar, ethylene glycol monoethyl ether acetate, diethylene glycol monocarboxylic acid acetic acid vinegar, diethylene glycol monoethyl ketone acetate, Propyl alcohol monomethyl ether acetate 'propylene glycol monoethyl ether acetate, etc. Other ether compounds are, for example, diethylene glycol dicarboxylic acid, diethylene glycol monoethyl ether, monoethyl alcohol methyl ether, diethylene glycol Diethyl ether, tetrahydrofuran, etc., such as methyl ethyl ketone 'methyl _ η pentanone, cyclohexanone, 2-heptanone, 3-heptanone, and the like. The lactic acid vinegar may, for example, be methyl lactate, ethyl lactate, lactic acid propylene -30-201137517, or isobutyl lactate.

酯、3·乙氧基丙酸乙酯、乙氧基乙酸乙醋 酯、乳酸異丙酯、乳酸η-丁酯、 3-甲; 、羥基乙酸乙酯Ester, ethyl ethoxypropionate, ethyl ethoxyacetate, isopropyl lactate, η-butyl lactate, 3-methyl; ethyl hydroxyacetate

、甲酸η-戊酯、乙 、丁酸η-丙酯、丁酸異 丙酮酸乙酯、丙酮酸η· 乙酸異丙醋、乙酸η -丁酯、乙酸異丁醋 酸異戊酯、丙酸η-丁酯、丁酸乙酯、丁 丙酯、丁酸η-丁酯、丙酮酸甲醋、两酿 丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2_氧代丁酸乙醋等 〇 前述芳香族烴例如有甲苯、二甲苯等。 前述醯胺化合物例如有Ν,Ν-二甲基甲酿胺、Ν,Ν_二甲 基乙醯胺等。 前述內酯化合物例如有γ-丁內酯等。 此等溶劑中’從溶解性、分散性、塗佈性等的觀點, 較佳爲丙一醇單甲醚、乙二醇單甲酸乙酸酯、丙二醇單甲 醚乙酸酯、丙二醇單乙醚乙酸酯、二乙二醇二甲醚、二乙 二醇甲基乙醚 '甲基-η·戊酮 '環己酮、2-庚酮、3-庚酮、 乳酸乙酯、3 -甲氧基丙酸乙醋、3 -乙氧基丙酸甲醋、3 -乙 氧基丙酸乙酯、3·甲基-3-甲氧基丁基乙酸酯、乙酸η_ 丁酯 、乙酸異丁酯、甲酸η-戊酯、乙酸異戊酯、丙酸η_ 丁酯、 丁酸乙酯、丁酸異丙酯'丁酸η-丁酯、丙酮酸乙酯等。 前述溶劑可含有苄基乙醚、二- η-己醚、丙酮基丙酮、 201137517 異佛爾酮、己酸、辛酸、1-辛醇、1-壬醇、节醇、乙酸节 酯、苯甲酸乙酯、草酸二乙酯、馬來酸二乙酯、碳酸乙稀 酯、碳酸丙烯酯、乙二醇單苯醚乙酸酯等之高沸點溶劑。 此等高沸點溶劑可單獨1種使用或組合2種以上使用。 前述溶劑之含量從組成物之塗佈性、安定性等的觀簠古 ,不含組成物中之溶劑之各成分的合計比例通常使用5〜5 0 質量%,較佳爲1〇〜40質量%。 [2] 敏輻射線性組成物之製造方法 製造本發明之敏輻射線性組成物的方法,例如有在前 述溶劑(G)中,將所定量之黑色劑(A)、聚合物(B) 、酸產生劑(C )、交聯劑(D )及其他的添加劑等—次或 分批添加進行混合的方法等。此外,黑色劑(A )可以前 述黑色劑分散液的形態添加。 混合裝置例如有二輥、三輥、球磨機、粉碎機、分散 機、捏和機、雙向捏合機(Ko-Kneader) '均質器、混合 機、單軸擠壓機、2軸擠壓機等。混合後,必要時可使用 過濾器過濾。 [3] 絕緣膜及具備該絕緣膜的固體攝影元件 本發明之絕緣膜係由前述敏輻射線性組成物所得者或 藉由後述「絕緣膜之形成方法」形成者。 本發明之固體攝影元件係具備前述絕緣膜者,具體而 言,至少具備光電轉換部、前述絕緣膜、及電極部者。 -32- 201137517 例如固體攝影元件例如有具有貫穿電極之固體攝影元 件或具有商品名「NeoPAC」 (OptoPAC Inc.公司製)等之 構造的固體攝影元件,且具有前述絕緣膜之固體攝影元件 等。 以下說明本發明之固體攝影元件用之光電轉換部之組 裝用的絕緣膜及具備該絕緣膜之本發明之固體攝影元件。 例示本發明之絕緣膜及本發明之固體攝影元件之代表 例(參照圖1及圖2 )。 圖1係含有絕緣膜16之固體攝影元件1之要部剖面圖, 具備由矽晶圓等所構成之支持基板11;貫穿此支持基板II 之一面側(以下稱爲「上面側」)及他面側(以下稱爲「 下面側」)之貫通孔之內壁面及形成於支持基板11之下面 表面之絕緣層12;形成於前述含有貫通孔之內表面之絕緣 層1 2之表面的配線部1 3 ;配線部1 3之表面中,局部形成之 電極部15;此電極部15之周緣,且支持基板11之下面表面 之絕緣層1 2的表面、及形成於未形成電極部之配線部1 3之 表面之絕緣膜16。此外,此圖1中,省略配置於支持基板 1 1之上面側的光電轉換部等。 此外,圖2係圖1之固體攝影元件1中之電極部15之露 出部具備錫球(soldering ball) 17的固體攝影兀件1’。 [4]絕緣膜之形成方法 本發明之絕緣膜之形成方法係固體攝影元件中之光電 轉換部之組裝用的絕緣膜之形成方法,其特徵係具備:Η-amyl formate, B, η-propyl butyrate, ethyl isobutyrate butyrate, η·acetic acid isopropyl acetate, η-butyl acetate, isoamyl acetate isobutyl acetate, propionic acid η -butyl ester, ethyl butyrate, butyrate, butyl butyl butyrate, methyl acetonate, propyl propyl acetate, methyl acetate, ethyl acetate, ethyl 2-oxobutanoate The aromatic hydrocarbon is, for example, toluene, xylene or the like. The aforementioned guanamine compound is, for example, ruthenium, dimethyl dimethylamine, hydrazine, hydrazine-dimethylacetamide or the like. The lactone compound is, for example, γ-butyrolactone or the like. Among these solvents, from the viewpoints of solubility, dispersibility, coating properties, etc., preferred are propanol monomethyl ether, ethylene glycol monocarboxylic acid acetate, propylene glycol monomethyl ether acetate, and propylene glycol monoethyl ether. Acid ester, diethylene glycol dimethyl ether, diethylene glycol methyl ether 'methyl-η·pentanone' cyclohexanone, 2-heptanone, 3-heptanone, ethyl lactate, 3-methoxy Ethyl propionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, 3-methyl-3-methoxybutyl acetate, η-butyl acetate, isobutyl acetate Η-amyl formate, isoamyl acetate, η-butyl propionate, ethyl butyrate, isopropyl butyrate η-butyl butyrate, ethyl pyruvate, and the like. The solvent may contain benzyl ether, di-n-hexyl ether, acetone acetone, 201137517 isophorone, hexanoic acid, octanoic acid, 1-octanol, 1-nonanol, sterol, acetate, benzoate B A high boiling point solvent such as ester, diethyl oxalate, diethyl maleate, ethylene carbonate, propylene carbonate, ethylene glycol monophenyl ether acetate or the like. These high-boiling solvents may be used alone or in combination of two or more. The content of the solvent is usually from 5 to 50% by mass, preferably from 1 to 40% by mass, based on the coating property and stability of the composition. %. [2] Method for producing linear composition of sensitive radiation The method for producing the linear composition for sensitive radiation of the present invention, for example, the black agent (A), the polymer (B), and the acid in a predetermined amount in the solvent (G) A method in which the generating agent (C), the crosslinking agent (D), and other additives are added in a sub- or batchwise manner, and the like. Further, the black agent (A) may be added in the form of the black agent dispersion described above. The mixing device is, for example, a two-roller, a three-roller, a ball mill, a pulverizer, a disperser, a kneader, a two-way kneader (Ko-Kneader) 'homogenizer, a mixer, a single-axis extruder, a 2-axis extruder, and the like. After mixing, filter with a filter if necessary. [3] Insulating film and solid-state imaging device including the same. The insulating film of the present invention is obtained by the above-mentioned radiation-sensitive linear composition or by a method of forming an insulating film which will be described later. The solid-state imaging device of the present invention includes the above-described insulating film, and specifically includes at least a photoelectric conversion portion, the insulating film, and an electrode portion. In the solid-state imaging device, for example, a solid-state imaging element having a through-electrode or a solid-state imaging element having a structure such as "NeoPAC" (manufactured by OptoPAC Inc.), and a solid-state imaging element having the above-described insulating film. In the following, an insulating film for assembling a photoelectric conversion portion for a solid-state imaging device of the present invention and a solid-state imaging device of the present invention including the insulating film will be described. Representative examples of the insulating film of the present invention and the solid-state imaging device of the present invention (see Figs. 1 and 2) are exemplified. 1 is a cross-sectional view of a principal part of a solid-state imaging device 1 including an insulating film 16, and includes a support substrate 11 made of a germanium wafer or the like; a surface side of the support substrate II (hereinafter referred to as "upper side") and An inner wall surface of the through hole on the surface side (hereinafter referred to as "lower side") and an insulating layer 12 formed on the lower surface of the support substrate 11; and a wiring portion formed on the surface of the insulating layer 12 including the inner surface of the through hole 1 3; a partially formed electrode portion 15 on the surface of the wiring portion 13; a peripheral edge of the electrode portion 15, a surface of the insulating layer 12 supporting the lower surface of the substrate 11, and a wiring portion formed on the electrode portion not formed The insulating film 16 of the surface of 1-3. Further, in Fig. 1, the photoelectric conversion portion and the like disposed on the upper surface side of the support substrate 1 1 are omitted. Further, Fig. 2 is a solid-state imaging element 1' in which the exposed portion of the electrode portion 15 of the solid-state imaging device 1 of Fig. 1 is provided with a solder ball 17. [4] Method of forming an insulating film The method for forming an insulating film of the present invention is a method for forming an insulating film for assembling a photoelectric conversion portion in a solid-state imaging device, and has a feature of:

S -33- 201137517 (1) 於具備電極部之基板上形成由敏輻射線性組成 物所構成之塗膜的步驟、 (2) 至少對形成於前述電極部上之塗膜以外的塗膜 進行曝光的步驟、 (3) 將曝光後之塗膜進行顯像的步驟。 前述絕緣膜16(參照圖1及圖2)具體而言,例如在下 面表面局部具有電極部15之絕緣膜形成用基板(無圖示) 上,塗佈前述本發明之敏輻射線性組成物後,進行預烘烤 形成塗膜(被膜)。其次,介於光罩,以在顯像後,至少 電極部15露出而設計之所定的圖型,對此被膜進行曝光。 然後,顯像、溶解除去被膜之未曝光部。然後,必要時, 藉由進行後烘烤可得到絕緣膜1 6。 塗佈前述本發明之敏輻射線性組成物時,可使用旋轉 塗佈、流延塗佈、輥塗佈等公知之塗佈方法。 然後,將前述塗膜進行預烘烤時之溫度係因塗膜之構 成成分等,可適當選擇,通常爲7 0〜13(TC之範圍,較佳爲 8 0〜1 20°C之範圍。此熱處理在前述範圍中,溫度固定的狀 態下進行,或組合昇溫及降溫進行熱處理。 其次,對於預烘烤後之被膜,以光線、紫外線、遠紫 外線、電子線、X射線等之光(輻射)進行曝光。 然後,對曝光後之被膜進行顯像。顯像所用的顯像液 ,通常使用鹼顯像液β鹼顯像液較佳爲例如氫氧化鈉、氫 氧化鉀、碳酸鈉、碳酸氫鈉、矽酸鈉、偏砂酸鈉、氨水' 乙胺、二乙胺、二甲基乙醇胺、.氫氧化四甲基銨、氫氧化 -34- 201137517 四乙基銨 '膽鹼、吡咯、哌啶、丨,8-二氮雜二環[5·4·0]-7-十一烯、1,5-二氮雜二環[4.3.0]·5-壬烷等之水溶液。此水 溶液可爲適量添加甲醇、乙醇等之水溶性有機溶劑、界面 活性劑者。 顯像方法例如有噴灑顯像法、噴霧顯像法、浸漬顯像 法、盛液顯像法等。顯像時間通常在常溫(22 t~2 8 t )爲 5〜300秒。 顯像後,通常進行水洗及乾燥。乾燥方法例如有加熱 板、使用烘箱等之熱乾燥;使用空氣槍等之風乾等。 顯像後,所得之經圖型化的被膜(圖型化被膜),必 要時,經後烘烤成爲絕緣膜。 將前述圖型化被膜進行後烘烤時之溫度係因圖型化被 膜之構成成分等而適當選擇,通常爲150〜2 50 °C之範圍, 較佳爲180〜230 °C之範圍。 前述絕緣膜可爲單一層及多層。 前述絕緣膜之厚度,從絕緣性、遮光性及密著性的觀 點,較佳爲30μπι以下,更佳爲1〜25μιη,更佳爲2〜20μιη。 此外,前述絕緣膜之厚度爲30μπι以下時,可充分遮蔽含有 紅外線之由外部的光,且可形成無龜裂等的絕緣膜。 前述絕緣膜其表面可具備保護膜。此時,保護膜形成 材料可使用丙烯酸系樹脂組成物、環氧樹脂組成物、聚醯 亞胺樹脂組成物等。 【實施方式】S-33-201137517 (1) a step of forming a coating film composed of a linear composition of a sensitive radiation on a substrate having an electrode portion, and (2) exposing at least a coating film other than the coating film formed on the electrode portion The step of (3) the step of developing the exposed film. Specifically, the insulating film 16 (see FIGS. 1 and 2) is applied to the insulating film forming substrate (not shown) having the electrode portion 15 on the lower surface, for example, after applying the above-described sensitive radiation linear composition of the present invention. , pre-baking to form a coating film (film). Next, the film is exposed to the pattern which is designed to expose at least the electrode portion 15 after development. Then, the unexposed portion of the film is developed and dissolved. Then, if necessary, an insulating film 16 can be obtained by performing post-baking. When the above-mentioned sensitive radiation linear composition of the present invention is applied, a known coating method such as spin coating, cast coating, or roll coating can be used. Then, the temperature at which the coating film is pre-baked can be appropriately selected depending on the constituent components of the coating film, etc., and is usually in the range of 70 to 13 (TC range, preferably 80 to 1 20 ° C). In the above range, the heat treatment is carried out in a state where the temperature is fixed, or the heat treatment is performed by combining the temperature rise and the temperature decrease. Next, for the film after the prebaking, light such as light, ultraviolet light, far ultraviolet light, electron beam, or X-ray is irradiated (radiation) The exposure is carried out. Then, the film after exposure is developed. The developing solution for imaging is usually an alkali developing solution, and the β-base developing solution is preferably, for example, sodium hydroxide, potassium hydroxide, sodium carbonate or carbonic acid. Sodium hydrogen hydride, sodium citrate, sodium metasilicate, ammonia water 'ethylamine, diethylamine, dimethylethanolamine, tetramethylammonium hydroxide, hydrogen peroxide-34-201137517 tetraethylammonium 'choline, pyrrole, An aqueous solution of piperidine, hydrazine, 8-diazabicyclo[5·4·0]-7-undecene, 1,5-diazabicyclo[4.3.0]·5-decane, etc. The aqueous solution may be an appropriate amount of a water-soluble organic solvent such as methanol or ethanol, or a surfactant. Method, spray imaging, immersion imaging, liquid imaging, etc. The development time is usually 5 to 300 seconds at normal temperature (22 t~2 8 t). After development, it is usually washed with water and dried. The method is, for example, a hot plate, a heat drying using an oven, or the like; air drying using an air gun or the like. After development, the obtained patterned film (patterned film) is post-baked to become an insulating film if necessary. The temperature at which the patterned film is post-baked is appropriately selected depending on the constituent components of the patterned film, and is usually in the range of 150 to 2 50 ° C, preferably 180 to 230 ° C. The insulating film may have a single layer or a plurality of layers. The thickness of the insulating film is preferably 30 μm or less, more preferably 1 to 25 μm, and still more preferably 2 to 20 μm from the viewpoints of insulating properties, light blocking properties, and adhesion. When the thickness of the insulating film is 30 μm or less, the external light containing infrared rays can be sufficiently shielded, and an insulating film free from cracks or the like can be formed. The insulating film may have a protective film on its surface. In this case, the protective film forming material Acrylic tree can be used Composition, the epoxy resin composition, polyimide resin composition, etc. [Embodiment

S -35- 201137517 [實施例] 以下舉實施例更詳細説明本發明,但是超出本發明之 主旨的範圍內’本發明不限於此實施例。其中「份」及Γ %」無特別聲明時爲質量基準。 π]敏輻射線性組成物之調製 (1-1)黑色劑分散液之調製 以下述表1所示之比例,藉由珠磨機混合黑色劑(A ) 、分散劑(Η )、及溶劑(I ),調製黑色劑分散液(Αχ- 1 )〜(Ax-3 )。 表1 黑色劑分散液 黑色劑(A) 分散劑(H) 溶劑⑴ 種類(質量份) 種類(質量份) 種類(質量份) Ax-1 A-1 (20) H-1 (5) 1-1 (75) Ax-2 A-2 (20) H-2 (5) 卜 1 (75) Αχ—3 A-2 (20) H-3⑸ 1-1 (75) 表1之黑色劑(A )、分散劑(Η )、及溶劑(I )之詳 細內容如下所示。 <黑色劑(A ) > A-1:碳黒(藉由光散射法之粒徑:10~200μηι) Α-2:鈦黑(藉由光散射法之粒徑:10〜200μπ〇 <分散劑(Η ) > -36- 201137517 Η-1 :改性丙烯酸系嵌段共聚合物(BYK · Japan公司 製、商品名 r DISPERBYK-2001」) Η-2:表面處理劑(BYK’Japan公司製、商品名「 DISPERBYK- 1 65 j ) H-3: 3-甲基丙烯氧基丙基三甲氧基矽烷 <溶劑(I) > 1-1 : 3-甲氧基丁基乙酸酯 (1 -2 )敏輻射線性組成物之調製(實施例1 ~3 ) 如下述表2所示,混合各成分調製實施例1〜3之敏轄射 線性組成物。各成分之詳細內容如下述。S - 35 - 201137517 [Examples] The present invention will be described in more detail below, but is not intended to limit the scope of the present invention. The “parts” and “%” are the quality benchmarks unless otherwise stated. Preparation of π]sensitive radiation linear composition (1-1) Modification of black agent dispersion The black agent (A), dispersant (Η), and solvent were mixed by a bead mill at a ratio shown in Table 1 below. I), modulating the black agent dispersion (Αχ-1)~(Ax-3). Table 1 Black agent dispersion black agent (A) Dispersant (H) Solvent (1) Type (parts by mass) Species (parts by mass) Type (mass) Ax-1 A-1 (20) H-1 (5) 1- 1 (75) Ax-2 A-2 (20) H-2 (5) Bu 1 (75) Αχ—3 A-2 (20) H-3(5) 1-1 (75) Table 1 black agent (A) The details of the dispersing agent (Η) and the solvent (I) are as follows. <Black agent (A ) > A-1: carbon 黒 (particle diameter by light scattering method: 10 to 200 μηι) Α-2: titanium black (particle diameter by light scattering method: 10 to 200 μπ 〇 < Dispersant (Η ) > -36- 201137517 Η-1 : Modified acrylic block copolymer (BYK·Japan company, trade name r DISPERBYK-2001) Η-2: Surface treatment agent (BYK' Made by Japan Corporation, trade name "DISPERBYK- 1 65 j ) H-3: 3-methacryloxypropyltrimethoxydecane <Solvent (I) > 1-1 : 3-methoxybutyl B Preparation of the linear composition of the acid ester (1-2)-sensitive radiation (Examples 1 to 3) As shown in the following Table 2, the components of each of the components were prepared by mixing the respective components to prepare the radioactive composition of Examples 1 to 3. Details of each component As described below.

S -37- 201137517 溶劑(G) 種類(質量份) Φ Ο in οο ^^ Γ"Η CO 1 1 ο ο Φ Ο *—< C^3 1 1 · ο ο G-l (56) G-2 (80) 添加劑(F) 種類(質量份) Ν r-Ν LTD ι—· c<i d —CSJ F-1 (2.5) F-2(0.1) F-1 (2.5) F-2 (0.1) 交聯聚合物 丨粒子(E) 種類(質量份) Ε-1 (5) Ε-1⑸ E-l (5) 交聯劑(D) 種類(質量份) D-1 (15) D-2 (5) D-1 (15) D-2 (5) D-1 (15) D-2⑸ 酸產生劑(C) 種類(質量份) C-1 (3) C-1 (3) C-1 (3) 低分子 化合物⑹ 種類(質量份) b-1 (10) b-1 (10) b-1 (10) .1 聚合物(B) 1_ 種類(質量份) Ο ο 卜Ν V—^ ^ CS3 1 1 CQ CQ B-1 (70) Β-2 (20) 0 o 卜CS3 'V-^ ^^ 1 1 m cq 黑色劑 分 tie 液(Αχ) r '種類(質量份) Αχ-1 (20) Ax-2 (20) Ax-3 (20) 實施例1 實施例2 實施例3 -38- 201137517 <黑色劑分散液(Αχ) >S -37- 201137517 Solvent (G) Type (parts by mass) Φ Ο in οο ^^ Γ"Η CO 1 1 ο ο Φ Ο *—< C^3 1 1 · ο ο Gl (56) G-2 ( 80) Additive (F) Type (parts by mass) Ν r-Ν LTD ι—· c<id —CSJ F-1 (2.5) F-2(0.1) F-1 (2.5) F-2 (0.1) Crosslinking Polymer cerium particles (E) Type (parts by mass) Ε-1 (5) Ε-1(5) El (5) Crosslinking agent (D) Type (parts by mass) D-1 (15) D-2 (5) D- 1 (15) D-2 (5) D-1 (15) D-2(5) Acid generator (C) Type (mass) C-1 (3) C-1 (3) C-1 (3) Low molecular weight Compound (6) Type (parts by mass) b-1 (10) b-1 (10) b-1 (10) .1 Polymer (B) 1_ Type (parts by mass) Ο ο Ν Ν V—^ ^ CS3 1 1 CQ CQ B-1 (70) Β-2 (20) 0 o Bu CS3 'V-^ ^^ 1 1 m cq Black agent tie solution (Αχ) r 'Type (mass) Αχ-1 (20) Ax- 2 (20) Ax-3 (20) Example 1 Example 2 Example 3 -38- 201137517 <Black agent dispersion (Αχ) >

Ax-1 :前述之黑色劑分散液(Αχ-1 )Ax-1: the aforementioned black agent dispersion (Αχ-1)

Ax-2:前述之黑色劑分散液(Ax-2) <聚合物(B ) > B-l: m -甲酣/ρ -甲酣=60/40 (莫耳比)所構成之甲酣 醛樹脂(藉由凝膠滲透色譜之聚苯乙烯換算之重量平均分 子量=6500 ) B-2: p-羥基聚苯乙烯(藉由凝膠滲透色譜之聚苯乙 稀換算之重量平均分子量= 3000) <低分子化合物(b ) > !5-1:4,4’-[1-[4-[1-(4-羥基苯基)-1-甲基乙基]苯基] 亞乙基]雙酚 <酸產生劑(C ) > C-l: 1-(4,7-二丁氧基-1-萘基)四氫噻吩鑰三氟甲 烷磺酸鹽 <交聯劑(D) > D-1:六甲氧基甲基三聚氰胺(三井Cytec股份公司製 、商品名「Cymel 300」) D-2:三經甲基丙院聚縮水甘油醚(Nagasechemtex股 份公司製、商品名「DENACOLEX321L」)): <交聯聚合物粒子(E ) > E-1: 丁二烯/丙烯腈/羥基丁基甲基丙烯酸酯/甲基丙 烯酸/二乙烯基苯=64/20/8/6/2 (莫耳比、藉由光散射法之 重量平均粒徑= 7〇nm) •39- 201137517 <其他之添加劑(F) > F -1 : 3 -縮水甘油基丙基三甲氧基矽烷 F-2 :二甘油EO加成物五氟壬醚(股份公司Neos製、 商品名「FTX-218」) <溶劑(G) > G-1 :甲基-η-戊酮 G-2 :乳酸乙酯 (1 -3 )敏輻射線性組成物之調製(比較例1 ) (1-3-1 )聚合物(R-1 )之調製 在燒瓶內,將甲基丙烯酸25份、Ν-苯基馬來醯亞胺30 份、苯乙烯18份、苄基甲基丙烯酸酯15份及2-丙烯醯氧基 氧乙基琥珀酸12份溶解於環己酮200份中。接著,添加2、 2 ’ -偶氮雙異丁腈1份、及α-甲基苯乙烯二聚物2.5份,以 8 0 °C加熱5小時,得到聚合物(R-1 )。 聚合物(R-1)之藉由凝膠滲透管柱色譜之聚苯乙烯 換算重量平均分子量爲22 000。 本實施例之藉由凝膠滲透管柱色譜之聚苯乙烯換算重 量平均分子量之測定條件如下述。 <重量平均分子量(Mw)之測定> 使用東曹公司製GPC(商品名「HLC-8220GPC」)之 GPC管柱(商品名「G2000HXL」2支、商品名「TSKgel、 GMPW」1支、商品名「G3 000PW」1支),以流量: l.OmL/分鐘、溶出溶劑:四氫呋喃、管柱溫度:40°C的分 -40- 201137517 析條件,藉由以單分散聚苯乙烯爲標準之凝膠滲透色譜( GPC)進行量測。 (1 -3-2 )敏輻射線性組成物(比較例1 )之調製 將如上述調製之聚合物(R-1 ) 20份、前述黑色劑分 散液(Αχ-1 ) 50份、多官能性單體(二季戊四醇六丙烯酸 酯(商品名「ΜΑΧ3510」、東亞合成股份公司製))8份 、光聚合起始劑(2-苄基-2-二甲基胺基-4’-嗎啉基苯丁酮 )2.2份、光聚合起始劑(2,2’-雙(2-氯苯基)-4,5,4’,5’-四苯基-1,2,-聯咪唑)1.7份、光聚合起始劑(4,4,-雙(二 乙基胺基)二苯甲酮)0.6份、氫供給體(2-氫硫基苯並噻 tl坐)0.8份、界面活性劑(3-縮水甘油基丙基三甲氧基矽烷 )5份、界面活性劑(DIC社製、商品名「Megafac F475」 )0.6份、溶劑(丙二純單甲醚乙酸酯)丨2_8份、溶劑(環 己酮)1 0份進行混合,調製比較例1之敏輻射線性組成物 [2]敏輻射線性組成物之評價 前述所得之實施例1〜3及比較例1之敏輻射線性組成物 係依據下述項目進行評價。結果如表3所示。 (2- 1 )圖型形狀(殘渣、最小圖型尺寸) 使用旋轉塗佈機將敏輻射線性組成物塗佈於矽晶圓基 板後’在1 1 0°C之加熱板上預烘烤3分鐘(但是比較例1之Ax-2: the aforementioned black agent dispersion (Ax-2) < polymer (B) > Bl: m - formazan / ρ - formazan = 60 / 40 (mole ratio) composed of furfural Resin (weight average molecular weight in terms of polystyrene by gel permeation chromatography = 6500) B-2: p-hydroxy polystyrene (weight average molecular weight converted by polystyrene in gel permeation chromatography = 3000) <Low Molecular Compound (b) > !5-1: 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylene Bisphenol <acid generator (C) > Cl: 1-(4,7-dibutoxy-1-naphthalenyl)tetrahydrothiophene trifluoromethanesulfonate <crosslinking agent (D) > D-1: hexamethoxymethyl melamine (manufactured by Mitsui Cytec Co., Ltd., trade name "Cymel 300") D-2: Trimethoprim polyglycidyl ether (manufactured by Nagasechemtex Co., Ltd., trade name "DENACOLEX321L" ”)): <crosslinked polymer particles (E ) > E-1: butadiene/acrylonitrile/hydroxybutyl methacrylate/methacrylic acid/divinylbenzene=64/20/8/6/ 2 (Morby, weight average particle diameter by light scattering method = 7〇nm) • 39- 201137517 < Additive (F) > F -1 : 3 - glycidylpropyltrimethoxydecane F-2 : diglycerin EO adduct pentafluoroindole (manufactured by the company Neos, trade name "FTX-218") <Solvent (G) > G-1: Modification of methyl-η-pentanone G-2: ethyl lactate (1 -3 )-sensitive radiation linear composition (Comparative Example 1) (1-3-1) The polymer (R-1) was prepared in a flask, 25 parts of methacrylic acid, 30 parts of fluorenyl-phenylmaleimide, 18 parts of styrene, 15 parts of benzyl methacrylate, and 2-propene oxime. 12 parts of oxyoxyethyl succinic acid was dissolved in 200 parts of cyclohexanone. Next, 2 parts of 2, 2'-azobisisobutyronitrile and 2.5 parts of α-methylstyrene dimer were added, and the mixture was heated at 80 ° C for 5 hours to obtain a polymer (R-1). The polymer (R-1) had a weight average molecular weight of 22,000 by polystyrene conversion by gel permeation column chromatography. The measurement conditions of the polystyrene-equivalent weight average molecular weight by gel permeation column chromatography of this example are as follows. <Measurement of Weight Average Molecular Weight (Mw)> A GPC column (trade name "G2000HXL", two products, "TSKgel, GMPW"), GPC (trade name "HLC-8220GPC") manufactured by Tosoh Corporation, was used. Product name "G3 000PW" 1), with flow rate: l.OmL / min, solvent: tetrahydrofuran, column temperature: 40 ° C, the range of -40-201137517, by monodisperse polystyrene as standard Gel permeation chromatography (GPC) was used for the measurement. (1 -3-2 ) Modulation of the sensitive radiation linear composition (Comparative Example 1) 20 parts of the polymer (R-1) prepared as described above, 50 parts of the above black agent dispersion (Αχ-1), and polyfunctionality Monomer (dipentaerythritol hexaacrylate (trade name "ΜΑΧ3510", manufactured by Toagosei Co., Ltd.)) 8 parts, photopolymerization initiator (2-benzyl-2-dimethylamino-4'-morpholinyl) Phenylbutanone) 2.2 parts, photopolymerization initiator (2,2'-bis(2-chlorophenyl)-4,5,4',5'-tetraphenyl-1,2,-biimidazole) 1.7 , photopolymerization initiator (4,4,-bis(diethylamino)benzophenone) 0.6 parts, hydrogen donor (2-hydrothiobenzothiazepine tl sitting) 0.8 parts, surfactant (3-glycidylpropyltrimethoxydecane) 5 parts, a surfactant (manufactured by DIC Corporation, trade name "Megafac F475") 0.6 parts, a solvent (propane monomethyl ether acetate) 丨 2_8 parts, Solvent (cyclohexanone) 10 parts were mixed, and the linear composition of the sensitive radiation of Comparative Example 1 was prepared. [2] The linear composition of the radiation sensitive composition was evaluated. The above-obtained sensitive radiation linear compositions of Examples 1 to 3 and Comparative Example 1 were obtained. Based on the following items Price. The results are shown in Table 3. (2- 1 ) Pattern shape (residue, minimum pattern size) After applying the linear composition of the sensitive radiation to the tantalum wafer substrate using a spin coater, 'prebaking on a hot plate at 110 ° C 3 Minutes (but Comparative Example 1)

S -41 - 201137517 敏輻射線性組成物係在90°C之加熱板上預烘烤2.5分鐘)形 成被膜。其次,將基板冷卻至室溫,使用曝光裝置(商品 名「mask aligner MA200ej 、SUSS 公司製)介於光罩, 將含有365nm' 405nm及436nm之各波長的紫外線,對被膜 進行曝光。此時之曝光量係2〇〇〇mJ/cm2 (但是比較例1之 敏輻射線性組成物係曝光量爲500mJ/cm2 )。 然後,使用23°C之含有聚氧乙烯系界面活性劑之〇.〇5 質量%氫氧化四甲基銨水溶液,對基板進行噴灑顯像1分鐘 。然後使用超純水洗淨、風乾。接著,在1 8 0 °C之加熱板 上進行60分鐘之後烘烤,基板上形成圖型化被膜(膜厚 2〇μιη)。所得之圖型化被膜使用電子顯微鏡觀察,依據下 述基準判定有否像素圖型之殘渣。此時,量測圖型整體未 剝離而殘留之最小的圖型尺寸(μιη )。 〇:無殘渣。 X :有許多殘渣。 (2-2 )密著性 使用旋轉塗佈機將敏輻射線性組成物塗佈於玻璃基板 (表面具有Si02層之基板)及表面具有銅箔之矽晶圓基板 後,在1 1 〇t之加熱板上預烘烤3分鐘(但是比較例1之敏 輻射線性組成物係在9〇°C之加熱板上預烘烤2.5分鐘)形成 被膜》其次,使用曝光裝置(商品名「mask aligner MA200e」' SUSS公司製)將含有 365nm、405nm及 436nm 之各波長的紫外線,對被膜全面進行曝光。此時之曝光量 -42- 201137517 係2 00 0mJ/cm2 (但是比較例1之敏輻射線性組成物係曝光 量爲 500mJ/cm2)。 然後,以180°C之加熱板進行後烘烤60分鐘,形成被 膜化得到膜厚20μπι的絕緣膜。 密著性係對於空白被膜及供下述條件(a )之絕緣膜 ,使用依據JIS K5400之切割及切割導弓丨(guide ),製作 1mm方格之棋盤格100個,藉由膠帶確認密著性(棋盤格 試驗)。計數膠帶剝離後殘留的棋盤格。 (a)將含絕緣膜的基板使用高度加速壽命試驗裝置 (型式「TPC-212」、ESPEC公司製),在溫度ll〇°C及濕 度100%之條件下,放置168小時後的絕緣膜。 (2-3 )電絕緣性(體積電阻率) 使用旋轉塗佈機將敏輻射線性組成物塗佈於表面具有 銅箔之矽晶圓基板後,在110 °C之加熱板上預烘烤3分鐘( 但是比較例1之敏輻射線性組成物係在9 0 °C之加熱板上預 烘烤2.5分鐘)形成被膜。其次,使用曝光裝置(商品名 「mask aligner MA200e」、SUSS 公司製)將含有 365nm、 405nm及436nm之各波長的紫外線,對被膜全面進行曝光 。此時之曝光量係2000mJ/cm2 (但是比較例1之敏輻射線 性組成物係曝光量爲5 0 0 m J / c m2 )。 然後,以180°C之加熱板進行後烘烤60分鐘,形成被 膜化得到膜厚20μιη的絕緣膜。体積電阻率係對於空白被膜 及供下述條件(b )之絕緣膜進行量測。S-41 - 201137517 The linear composition of the sensitive radiation was prebaked on a hot plate at 90 ° C for 2.5 minutes to form a film. Next, the substrate was cooled to room temperature, and an exposure apparatus (trade name "mask aligner MA200ej, manufactured by Suss Corporation") was placed between the masks to expose ultraviolet rays of respective wavelengths of 365 nm' 405 nm and 436 nm, and the film was exposed. The exposure amount was 2 〇〇〇 mJ/cm 2 (but the exposure radiation linear composition of Comparative Example 1 was 500 mJ/cm 2 ). Then, a polyoxyethylene surfactant containing 23 ° C was used. Mass % tetramethylammonium hydroxide aqueous solution, the substrate was spray-developed for 1 minute, then washed with ultrapure water, air-dried, and then baked on a hot plate at 180 ° C for 60 minutes, on the substrate. A patterned film (film thickness: 2 μm) was formed, and the obtained patterned film was observed with an electron microscope, and the residue of the pixel pattern was determined based on the following criteria. At this time, the entire pattern was not peeled off and remained. The smallest pattern size (μιη). 〇: no residue. X: There are many residues. (2-2) Adhesion The linear composition of the sensitive radiation is applied to a glass substrate using a spin coater (the surface has a SiO 2 layer) Substrate) and surface After the foil is wafer substrate, it is pre-baked on a 1 1 〇t hot plate for 3 minutes (but the sensitive radiation linear composition of Comparative Example 1 is prebaked on a hot plate at 9 ° C for 2.5 minutes). Films Next, ultraviolet rays of respective wavelengths of 365 nm, 405 nm, and 436 nm were used to expose the film to the entire surface using an exposure apparatus (trade name "mask aligner MA200e"' manufactured by SUSS Corporation). The exposure amount at this time -42 - 201137517 is 2 00 0 mJ/cm 2 (but the sensitive radiation linear composition of Comparative Example 1 is 500 mJ/cm 2 ). Then, post-baking was performed for 60 minutes on a hot plate at 180 ° C to form an insulating film having a film thickness of 20 μm. Adhesiveness For the blank film and the insulating film for the following condition (a), 100 pieces of 1 mm square checkerboard were produced using the cutting and cutting guide according to JIS K5400, and the tape was confirmed by the tape. Sex (checkerboard test). Count the remaining checkerboard after the tape is peeled off. (a) The insulating film was placed on the substrate containing the insulating film using a highly accelerated life tester (type "TPC-212", manufactured by ESPEC) at a temperature of ll 〇 ° C and a humidity of 100% for 168 hours. (2-3) Electrical Insulation (Volume Resistivity) The linear composition of the radiation radiation was applied to a silicon wafer having a copper foil on a surface using a spin coater, and then prebaked on a hot plate at 110 ° C. Minutes (but the sensitive radiation linear composition of Comparative Example 1 was prebaked on a hot plate at 90 ° C for 2.5 minutes) to form a film. Next, ultraviolet rays of respective wavelengths of 365 nm, 405 nm, and 436 nm were exposed using an exposure apparatus (trade name "mask aligner MA200e", manufactured by SUSS Corporation) to expose the film to the entire surface. The exposure amount at this time was 2000 mJ/cm 2 (but the exposure amount of the sensitive radiation linear composition of Comparative Example 1 was 50,000 m J / c m 2 ). Then, post-baking was performed for 60 minutes on a hot plate at 180 ° C to form an insulating film having a film thickness of 20 μm. The volume resistivity was measured for the blank film and the insulating film for the following condition (b).

S -43- 201137517 (b)將含絕緣膜的基板使用高度加速壽命試驗裝置 (型式「TPC-212」、ESPEC公司製),在溫度1 l〇°C及濕 度100%之條件下,放置168小時後的絕緣膜。 (2-4 )透過率 使用旋轉塗佈機將敏輻射線性組成物塗佈於玻璃基板 後,在1 1 〇°C之加熱板上預烘烤3分鐘(但是比較例1之敏 輻射線性組成物係在90°C之加熱板上預烘烤2.5分鐘)形成 被膜。其次,將具有此被膜之基板冷卻至室溫,使用曝光 裝置(商品名「mask aligner MA200e」、SUSS公司製) 將含有3 65nm、405nm及436nm之各波長的紫外線,對被膜 全面進行曝光。此時之曝光量係2 000m J/cm2 (但是比較例 1之敏輻射線性組成物係曝光量爲5 0 0m J/cm2 )。 然後,以180°C之加熱板進行後烘烤60分鐘,形成被 膜化得到膜厚20 μηι的絕緣膜。 透過率係對於空白被膜及供下述之各種條件(c)〜( e)的絕緣膜,使用分光光度計(型式「V73 00」、日本分 光公司製),以溫度23C、波長fe圍400~l,200nm量測, 評價在l,〇〇〇nm的透過率。 (c )將含絕緣膜的基板使用恆溫恆濕試驗裝置(型 式「PSL-2KPH」 、ESPEC公司製),在溫度851及濕度 8 5%的條件下,放置168小時後的絕緣膜。 (d)將含絕緣膜的基板使用高度加速壽命試驗裝置 (型式「TPC-212」、ESPEC公司製),在溫度110»c及濕 -44- 201137517 度100%之條件下,放置168小時後的絕緣膜。 (e)將含絕緣膜的基板在加熱板上,大氣中,260°C 放置1小時後的絕緣膜。 表3 實施例1 實施例2 實施例3 比較例1 圖型形狀 殘渣 〇 〇 〇 〇 最小圖型 尺寸(ju m) <50 <50 <50 <50 密著性 (含銅箔基板) 空白 100 100 100 100 條件(a) 100 100 100 50 密著性 (含Si〇2基板) 空白 100 100 100 100 條件(a) 100 100 100 100 電絕緣性 (Ω - cm) 空白 1.3X1015 1.5X1015 1.7X1015 1.5 X109 條件⑹ 1.2X1015 1.5X1015 1.9X1015 9X108 透過率 (%τ) 空白 0.2 <0.1 <0.1 0.2 條件(C) 0.2 <0.1 <0.1 0.2 條件(d) 0.2 <0.1 <0.1 0.2 條件(e) 0.2 <0.1 <0.1 0.2 [產業上之可利用性] 本發明之敏輻射線性組成物適用於形成配設於數位相 機、攝影機、車上相機、具有攝影功能之個人電腦、行動 電話'電子小冊等之電子機器之固體攝影元件之光電轉換 部組裝用的絕緣膜。 【圖式簡單說明】 [圖1 ]表示含有絕緣膜之固體攝影元件之一例的要部剖 -45- 201137517 面圖。 [圖2]表示含有絕緣膜之固體攝影元件之其他例的要部 剖面圖。 【主要元件符號說明】 1、1 ’ :固體攝影元件 11 :支持基板 1 2 :絕緣層 1 3 :配線部 1 5 :電極部 1 6 :絕緣膜 1 7 :錫球 -46-S -43- 201137517 (b) Using a highly accelerated life tester (type "TPC-212", manufactured by ESPEC), the substrate containing the insulating film is placed at a temperature of 1 l ° ° C and a humidity of 100%. Insulation film after hours. (2-4) Transmittance The linear composition of the radiation radiation was applied to the glass substrate using a spin coater, and then prebaked on a hot plate at 1 〇 ° C for 3 minutes (but the linear composition of the sensitive radiation of Comparative Example 1) The system was prebaked on a hot plate at 90 ° C for 2.5 minutes to form a film. Then, the substrate having the film was cooled to room temperature, and ultraviolet rays of respective wavelengths of 3, 65 nm, 405 nm, and 436 nm were exposed to an entire surface of the film by using an exposure apparatus (trade name "mask aligner MA200e" or manufactured by Suss Corporation). The exposure amount at this time was 2 000 m J/cm 2 (but the exposure radiation linear composition of Comparative Example 1 was exposed to 50,000 m J/cm 2 ). Then, post-baking was performed for 60 minutes on a hot plate at 180 ° C to form an insulating film having a film thickness of 20 μm. The transmittance is measured by using a spectrophotometer (type "V73 00", manufactured by JASCO Corporation) for the blank film and the insulating film for the various conditions (c) to (e) described below. The temperature is 23 C and the wavelength fe is 400~. l, 200 nm measurement, evaluate the transmittance at 1, 〇〇〇 nm. (c) The insulating film was placed on the substrate containing the insulating film using a constant temperature and humidity test apparatus (type "PSL-2KPH", manufactured by ESPEC) under the conditions of a temperature of 851 and a humidity of 85% for 168 hours. (d) Using a highly accelerated life tester (type "TPC-212", manufactured by ESPEC), the substrate containing the insulating film was placed at 168 hours after the temperature of 110»c and wet-44-201137517 degrees 100%. Insulating film. (e) An insulating film in which an insulating film-containing substrate was placed on a hot plate at 260 ° C for 1 hour in the air. Table 3 Example 1 Example 2 Example 3 Comparative Example 1 Pattern shape residue 〇〇〇〇 minimum pattern size (ju m) < 50 < 50 < 50 < 50 adhesion (including copper foil substrate ) Blank 100 100 100 100 Condition (a) 100 100 100 50 Adhesion (including Si〇2 substrate) Blank 100 100 100 100 Condition (a) 100 100 100 100 Electrical insulation (Ω - cm) Blank 1.3X1015 1.5X1015 1.7X1015 1.5 X109 Condition (6) 1.2X1015 1.5X1015 1.9X1015 9X108 Transmittance (%τ) Blank 0.2 <0.1 <0.1 0.2 Condition (C) 0.2 <0.1 <0.1 0.2 Condition (d) 0.2 <0.1 < 0.1 0.2 Condition (e) 0.2 < 0.1 < 0.1 0.2 [Industrial Applicability] The sensitive radiation linear composition of the present invention is suitable for forming an individual equipped with a digital camera, a camera, a car camera, and a photographing function An insulating film for assembling a photoelectric conversion unit of a solid-state imaging device of an electronic device such as a computer or a mobile phone. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] A plan view showing an essential part of an example of a solid-state imaging element including an insulating film is shown in Fig. 45-201137517. Fig. 2 is a cross-sectional view of an essential part showing another example of a solid-state imaging element including an insulating film. [Description of main component symbols] 1, 1 ': Solid-state imaging element 11 : Support substrate 1 2 : Insulation layer 1 3 : Wiring part 1 5 : Electrode part 1 6 : Insulating film 1 7 : Tin ball -46-

Claims (1)

201137517 七、申請專利範圍: 1. 一種敏輻射線性組成物,其特徵係含有 (A )黑色劑、 (B) 具有酚性羥基之聚合物、 (C) 敏輻射線性酸產生劑、 (D) 藉由酸之作用進行交聯反應的交聯劑。 2 .如申請專利範圍第1項之敏輻射線性組成物,其中 前述(B)具有酚性羥基之聚合物爲具有酚性羥基之化合 物與具有甲醯基之化合物的縮合物。 3 .如申請專利範圍第1項之敏輻射線性組成物,其中 前述(B)具有酚性羥基之聚合物爲具有羥基苯乙烯之聚 合性不飽和鍵開裂之構造單位的聚合物。 4.如申請專利範圍第1項之敏輻射線性組成物,其中 前述(B)具有酚性羥基之聚合物爲含有具有酚性羥基之 化合物與具有甲醯基之化合物的縮合物及具有羥基苯乙烯 之聚合性不飽和鍵開裂之構造單位的聚合物。 5 .如申請專利範圍第1項之敏輻射線性組成物,其中 前述(D)交聯劑係含有羥甲基之化合物。 6 ·如申請專利範圍第1項之敏輻射線性組成物,其係 再含有(E )交聯聚合物粒子。 7. 如申請專利範圍第1 ~6項中任一項之敏輻射線性組 成物’其係固體攝影元件中之光電轉換部之組裝用之絕緣 膜形成用的敏輻射線性組成物。 8. —種絕緣膜之形成方法,其係固體攝影元件中之光 S -47- 201137517 電轉換部之組裝用的絕緣膜之形成方法,其特徵係具備: (1) 於具備電極部之基板上形成由如申請專利範圍 第7項之敏輻射線性組成物所構成之塗膜的步驟、 (2) 至少對形成於前述電極部上之塗膜以外的塗膜 進行曝光的步驟、 (3 )將曝光後之塗膜進行顯像的步驟。 9. 一種絕緣膜,其特徵係藉由如申請專利範圍第8項 之絕緣膜之形成方法而形成者。 1 0 .—種絕緣膜,其特徵係由如申請專利範圍第1〜6項 中任一項之敏輻射線性組成物而製得者。 11. 一種固體攝影7Π件’其特徵係至少具備光電轉換 部、如申請專利範圍第9項之絕緣膜、及電極部。 -48-201137517 VII. Patent application scope: 1. A sensitive radiation linear composition characterized by (A) black agent, (B) polymer having phenolic hydroxyl group, (C) sensitive radiation linear acid generator, (D) A crosslinking agent which undergoes a crosslinking reaction by the action of an acid. 2. The sensitive radiation linear composition of claim 1, wherein the (B) polymer having a phenolic hydroxyl group is a condensate of a compound having a phenolic hydroxyl group and a compound having a methyl group. 3. The sensitive radiation linear composition of claim 1, wherein the (B) polymer having a phenolic hydroxyl group is a structural unit having a structural unit of polymerizable unsaturated bond cleavage of hydroxystyrene. 4. The linear composition of the radiation of claim 1, wherein the polymer having a phenolic hydroxyl group is a condensate containing a compound having a phenolic hydroxyl group and a compound having a methyl group and having a hydroxybenzene group. A polymer of structural units of ethylene polymerized unsaturated bond cracking. 5. The sensitive radiation linear composition of claim 1, wherein the (D) crosslinking agent is a compound containing a methylol group. 6. The sensitive radiation linear composition of claim 1 which further comprises (E) crosslinked polymer particles. 7. The radiation-sensitive linear composition of any one of the first to sixth aspects of the invention, which is a linear composition for forming a radiation film for forming an insulating film for assembling a photoelectric conversion portion in a solid-state imaging device. 8. A method of forming an insulating film, which is a method for forming an insulating film for assembling an electric conversion unit in a solid-state imaging device, characterized in that: (1) a substrate having an electrode portion a step of forming a coating film composed of a linear composition of a radiation sensitive agent according to claim 7 of the patent application, (2) a step of exposing at least a coating film other than the coating film formed on the electrode portion, (3) The step of developing the exposed coating film. An insulating film characterized by being formed by a method of forming an insulating film according to claim 8 of the patent application. An insulating film which is obtained by the linear composition of the sensitive radiation according to any one of claims 1 to 6 of the patent application. A solid-state imaging device 7 characterized in that it has at least a photoelectric conversion portion, an insulating film according to claim 9 of the patent application, and an electrode portion. -48-
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