201133588 六、發明說明： 【發明所屬之技術領域】 本發明涉及從喷嘴對例如半導體晶圓等基板供給處理液同時 一邊使基板旋轉一邊進行液體處理的技術領域。 【先前技術】 在半導體製造步驟中，包含對基板供給處理液同時一邊讓基 板旋轉一邊進行液體處理的步驟。具體而言，例如利用旋轉塗 法對基板供給抗側賴轉、在基絲面形成抗侧膜之 了除去基板周圍部位的抗钮劑而供、給溶劑的步驟、在基板旦; 處理之後歧淨液洗淨基板的轉、為m去 板g 面的步驟等。另外，在洗淨步驟時，洗淨液域魏/土板表 该等處理，如圖17所示的包含：旋轉夾頭u，盆 晶圓W ;旋轉驅動部12，其使該旋轉 ^ 及附亚保持 的周圍，下職 20的上方設置風扇過滹單元卩、 另外，在杯狀部 給與排氣管15的抽吸的氣體供 該排氣管15與工場排氣連# 氧流。 考慮到對環境的影響等因素，希 2〇内的蒙氣， 杯狀部20内的排氣量不充八希;抑制魏量。然而，當 n：.f, 著變^w的觸速度也跟 力 万面，專刹0h ^ 液ϊ喷吐σ使洗淨面上設置 邛的裝置。然而，該等步罟^, ,H爪過以洗淨杯狀部内 這個技剌題。而且^如何降低杯狀部的排氣量 洗淨’故在洗淨期間無行過液體處理之後再進行 晶圓的製造效率沒有什進订接下來财增處理，對提高 201133588 [習知技術文獻] [專利文獻] = 曰本特開平4-2_號公報 [專利文獻2]日本特開平5-2迎7號公^ 【發明内容】 [發明所欲解決的問題] 以及題二=的在於提供-種液體處理裝置 減少附著到基板上的水2 並防止水氣從杯狀部逆流，以 [解決問題之技術手段] 賴理其^嘴對在基板保持部保持水平 或比其更高的位置對’從_基板相同高度 水氣的水賴捉液杯狀领關圍面供給絲敝該處理液 1另夕處理裝置亦可設置成以下構造。 方向相ίί 供給口的水氣捕捉液的喷吐方向與基板旋轉 氣捕捉液的上、、°里5周整部’其調整該水氣捕捉液供給口的水 Γ記憶部，其儲存對應該基板轉速設定捕捉液 、'。里並控制忒供給量調整部以達到該供妗詈。 :該f氣捕捉液制來洗淨基板的洗淨液。 上，用’其設置在比該供給口更靠下方側的位置 用木口收4水軋捕捉液；以及循環部，其使該回收部所回收 201133588 之該水氣捕捉液循環回到該供給口。 tΪ發明缝體處理方法，其_紐轉部保持水平 ,ί板t給處理ί以進行處理’包含：使基板在基板保持部保持 2的:驟，接著使基板保持部繞垂直軸旋轉同時 心美 遠，板甩㈣，從沿著杯狀部的周向設㈣供細在與該基二 ，面度或，其更，的位置對該杯狀部的内周圍面供給用來J捉該 处理液巧的水氣淑液’以敝處理賴水氣的麵。" [對照先前技術之功效] 本發明在基板旋轉而處理液從該基板甩出時，對 周圍面供給水氣捕減以鋪捉賴捉處理液的水氣，故可抑 =板^而碰撞到杯狀部内壁的水氣反彈。水氣在杯狀部内壁 氣量、，但若利用本發明，便可抑制杯狀部内的 排氣量’即可抑制從杯狀部 蒙氣 ，抽及排__減少飛散到杯狀部外的水氣。由於 部内的fc氣的抽吸排氣量，故可應付在 二;== 排氣容量變顿肢。 _禮給處理裝置的 【實施方式】 ㈣本發日狀雜處縣置應祕抗_塗佈裝置的1 施祕。如圖i所示的抗蝕劑塗佈裝置 = == 成狀部4〇 ’該杯狀部4〇係由‘狀部4, 該内側杯狀部41位於旋轉夾頭31所保持 由環狀引導部41a與水平圓板部41b所構成，曾立 從接近並對向晶圓W的背面侧周圍部位 狀引涂°卩41 該水平圓板部41b與該_Mla的内周==== 201133588[Technical Field] The present invention relates to a technical field in which a processing liquid is supplied from a nozzle to a substrate such as a semiconductor wafer while the substrate is rotated while performing liquid processing. [Prior Art] In the semiconductor manufacturing step, a step of supplying a processing liquid to a substrate while performing liquid processing while rotating the substrate is included. Specifically, for example, a step of supplying a resist to the substrate by a spin coating method, forming a side film on the base surface, and removing a resist agent from a portion around the substrate to supply and supply a solvent, on the substrate, and after the treatment The cleaning of the cleaning liquid of the cleaning liquid is a step of removing the surface of the plate by m. In addition, during the cleaning step, the cleaning of the liquid area Wei/soil table, as shown in FIG. 17, includes: a rotating chuck u, a pot wafer W; and a rotary driving unit 12 that causes the rotation and In the vicinity of the sub-maintenance, a fan over-unit 卩 is provided above the lower position 20, and the suction gas supplied to the exhaust pipe 15 in the cup portion is supplied to the exhaust pipe 15 and the factory exhaust gas. Taking into account factors such as the impact on the environment, the gas in the cup 2, the amount of exhaust in the cup 20 is not full; However, when n:.f, the touch speed of the change ^w is also the same as the force of the face, the special brake 0h ^ liquid helium spit σ to make the device on the wash surface. However, the steps 罟^, , H claws pass to clean the technical problem in the cup. Moreover, how to reduce the amount of exhaust of the cup is washed. Therefore, the efficiency of wafer fabrication after the liquid treatment has not been carried out during the cleaning process has not been advanced, and the subsequent increase processing is performed to improve 201133588 [Practical Technical Literature] [Patent Document] = 曰本特开平4-2_号 [Patent Document 2] Japanese Special Kaiping 5-2 Ying No. 7 Gong ^ [Summary of the Invention] [Problems to be Solved by the Invention] Providing a liquid treatment device for reducing water 2 attached to the substrate and preventing water vapor from flowing back from the cup portion, [the technical means of solving the problem] is to keep the level at the substrate holding portion higher or higher The position is supplied to the cup-shaped collar surrounding surface of the water-receiving liquid from the same height of the substrate. The processing liquid 1 may be disposed in the following configuration. Directional phase ί The ejection direction of the water vapor trapping liquid at the supply port and the upper portion of the substrate rotating gas capturing liquid, and the entire portion of the liquid capturing liquid at the end of the circumference of the liquid capturing liquid supply port. Speed setting capture fluid, '. And control the supply adjustment unit to achieve the supply. : This f gas trapping liquid is used to wash the cleaning liquid of the substrate. In the above, the trapping liquid is collected by the wooden mouth at a position lower than the supply port, and the circulation portion is configured to circulate the water-capturing liquid recovered by the recovery unit 201133588 to the supply port. . In the invention, the method of processing the slit body is such that the button is held horizontally, and the sheet is processed to be processed. Meiyuan, Banyan (4), from the circumferential direction along the cup (4) for the finer and the base 2, the face or the position of the cup is supplied to the inner peripheral surface of the cup for J to capture the treatment liquid. The clever water and water solution is used to treat the surface of the water. " [Comparative to the efficacy of the prior art] The present invention rotates the substrate and the treatment liquid is scooped out from the substrate, and the water is trapped on the surrounding surface to capture the moisture of the treatment liquid, so that the plate can be suppressed. The moisture that collides with the inner wall of the cup bounces. The amount of water vapor in the inner wall of the cup is controlled by the present invention, so that the amount of exhaust gas in the cup portion can be suppressed, so that the cupping portion can be suppressed from being ventilated, and the venting can be prevented from scattering to the outside of the cup portion. steam. Due to the amount of suction and exhaust of the fc gas in the part, it can cope with the second; == the exhaust capacity becomes the limb. _ ritual processing device [Embodiment] (4) The hair of the Japanese-style miscellaneous county is set to 1 secret. The resist coating device shown in Fig. i === the forming portion 4'' of the cup portion 4 is formed by the 'shaped portion 4, which is located in the ring shape held by the rotary chuck 31 The guide portion 41a and the horizontal disc portion 41b are formed so as to be adjacent to the surface of the back surface side of the wafer W. The horizontal disc portion 41b and the inner circumference of the _Mla are ==== 201133588
2 L貫通。該引導部41a具有引導從晶圓w溢落之抗姓 二該外側杯狀部42以包圍内側杯狀部S 上緣設置ίί旋轉= 頁圓31筒二=與傾斜壁42b ’該圓筒部42a的 齡要u二轉又頌1所保持的晶圓W相同高度或比其更低 延伸。心傾斜壁42b從該圓筒部42a的上緣向内側上方斜向 讀流路体該環狀流路44成為流入杯狀部 液所流過的流或是被旋轉的晶圓W所甩出的抗_或洗淨 體管部設有文後會詳述的排水部幻，廢棄液 2近旋轉夾頭31的位置上以突人_態設置η 53\^/出來的嫩可使氣體無體分離。該排水部 下游人會《廢棄㈣管路34排出廢棄。魏管35在 ^保t日日0 W的周圍部位的水平方向的距離 晶圓W的半徑設為r (mn〇，從 ^2 L through. The guiding portion 41a has an anti-surname of the outer cup portion 42 that guides the overflow from the wafer w to surround the inner cup portion S. The upper edge is disposed ίί rotation = page circle 31 cylinder 2 = and the inclined wall 42b 'the cylinder portion The age of 42a is the same as or lower than the wafer W held by the first two turns. The core inclined wall 42b is obliquely directed upward from the upper edge of the cylindrical portion 42a toward the inside of the read flow path body. The annular flow path 44 is a flow that flows into the cup-shaped liquid or is ejected by the rotated wafer W. The anti- or the washing body tube part has the drainage part illusion which will be detailed later in the text, and the position of the waste liquid 2 near the rotating chuck 31 is set to be η 53\^/ Body separation. The downstream person of the drainage section will discharge the discarded (four) pipeline 34. The distance in the horizontal direction of the surrounding area of the Wei tube 35 at 0 W on the day of the protection, the radius of the wafer W is set to r (mn〇, from ^
=到與，壁42b相交的點的距離設為R J 的角度設為θ，角度e可用公式 角度θ縮小時’抗_便不易從外側杯狀部42反彈Γ故宜ϋ 離^的數值與半徑Γ接近。亦即，從角度的觀^ Ϊ離=斜壁必的距離較接近者為佳。然而，從 ί 為外側杯狀部42而反彈並附著到晶圓W上。因^ 聰持的晶® W的表_顯龍斜壁42b的水平 角度的觀點以及距離的觀點來看，宜設定= 不易杳生反弹情況的距離，例如1〇〜5〇mm。 ' 201133588 另外’根據圖2 (b)，當從晶圓W飛散出來的抗钱劑液的進 行方向與傾斜壁42b在垂直面上所構成的角度為φ時，在所飛散 之抗蚀劑液的運動軌跡用向量表示的情況下，沿著水平面對傾斜 壁42b以角度θ入射的向量的反射向量與沿著垂直面對傾斜壁4孔 以角度。Φ入射的向量的反射向量的合成向量使抗蝕劑液在斜壁 42b反彈。亦即，抗蝕劑液朝斜下方向反彈。因此，為了防止抗^ 劑液的反彈，在該實施態樣中，可將角度θ設為例如38度， 將角度Φ設為例如30度。 、’ 該内侧杯狀部41、外側杯狀部42可由親水性的材質例如不錢 鋼所構$或疋为別在樹脂杯狀部41、42的表面上形成親水性材 料的覆膜。藉此飛散的抗钱劑液便不易附著到杯狀部4卜4 面上。 』衣 在該外側杯狀部42的傾斜壁42b上，如圖4所 :向孔51。在鱗壁伪的内側面（下上= 的彎曲狀的设，圖5所示的從基端側向前端側擴大 ί 貫通孔51在引導蓋部51a内的基端部 液ίί吐^ ί盖·;^的前端側的開口部，相當於後述的洗淨 方向。、另4喷1b朝向與晶圓W的旋轉方向相同的 排方向以傾斜壁似的外侧面上，沿著貫通孔51的並 1财綠置鱗戦構❹。在該流路 部5!_成朝向與晶圓^ ^部沿的開σ 口部训流通洗淨液的理由向相同的方向’並利用該開 氣的速度纽輪，咖_水 液容易敝到抗银麻氣。 的相對速度，％小’讓洗淨 s亥流路形成構件5〇如圖4 連接，該供給管52餘出到斤掌置本 液的供給管52 装置本體的外裝部亦即框體80 201133588 的外部去。圖1簡略地顯示供給f52 $ 處位置上，惟亦可連接在例如相杯狀部4t的t ^的1 向的2處位置上，或是連接在3處以上的位置的上直，方向上互相對 另外，如圖1以及圖3所示的，在外鈿虹貼细μ 壁上沿著圓周方向設有排水部S3，並 ^42的底部的内 4〇的壁面流下的洗淨液。麻部53與的^^上^杯狀部 游側從上游_始依序設置泵62、過g 63 的下 :8= 調ί洗淨液流量的功能。:内:？ 用配官66c與緩衝槽65的氣相部分連接。 人側抽軋 與加壓氣體供給源67連接。 伐 的配s 66a 梓6^i£52ai勺下游侧連接暫時儲存洗淨液的緩衝才曹65 “爰衝= the distance to the point where the wall 42b intersects is set to the angle of RJ as θ, and when the angle e is reduced by the formula angle θ, the 'anti- _ is not easily rebounded from the outer cup portion 42. Therefore, the value and radius of the ^ ^ Hey close. That is to say, from the perspective of the angle ^ = = the oblique wall must be closer to the distance is better. However, it rebounds from ί for the outer cup 42 and adheres to the wafer W. From the point of view of the horizontal angle of the table _ slanting slanting wall 42b of the ® 晶 晶 晶 显 显 斜 42 42 42 42 42 42 42 42 42 42 42 42 42 。 。 。 。 。 。 。 宜 。 。 。 。 。 。 。 。 '201133588 In addition, according to FIG. 2(b), when the direction of progress of the anti-money agent liquid scattered from the wafer W and the angle formed by the inclined wall 42b on the vertical plane are φ, the scattered resist liquid In the case where the motion trajectory is represented by a vector, the reflection vector of the vector incident at the angle θ along the horizontally facing inclined wall 42b is at an angle to the hole facing the inclined wall 4 along the vertical direction. The resultant vector of the reflection vector of the Φ incident vector causes the resist liquid to bounce off the inclined wall 42b. That is, the resist liquid bounces in a downward direction. Therefore, in order to prevent the rebound of the resist liquid, in this embodiment, the angle θ can be set to, for example, 38 degrees, and the angle Φ can be set to, for example, 30 degrees. The inner cup portion 41 and the outer cup portion 42 may be formed of a hydrophilic material such as a steel material or a crucible to form a film of a hydrophilic material on the surfaces of the resin cup portions 41 and 42. Therefore, the scattered anti-money agent liquid is less likely to adhere to the cup 4 surface. The garment is placed on the inclined wall 42b of the outer cup portion 42, as shown in Fig. 4, to the hole 51. In the curved inner side surface of the scale wall (the upper side = the curved shape, the base end side of the guide cover portion 51a is 扩大The opening on the distal end side corresponds to a cleaning direction to be described later. The other four ejections 1b are oriented on the outer side surface of the same direction as the rotation direction of the wafer W, and are along the through-hole 51. In addition, the flow path portion 5!_ is oriented in the same direction as the reason for the flow of the cleaning liquid toward the opening σ of the wafer, and the air is used. Speed wheel, coffee _ water liquid is easy to pick up anti-silver gas. The relative speed, % small 'let the washing s Hai flow path forming member 5 连接 connected as shown in Figure 4, the supply tube 52 is left to the palm of the book The liquid supply pipe 52 is attached to the exterior of the casing body, that is, the exterior of the casing 80 201133588. Fig. 1 schematically shows the position of the supply f52 $, but may be connected to the t ^ 1 direction of the phase cup portion 4t, for example. At the 2 positions, or at the position where the connection is more than 3, the direction is opposite to each other, as shown in Fig. 1 and Fig. 3, The drainage portion S3 is provided on the upper side in the circumferential direction, and the cleaning liquid flows down from the inner wall of the bottom portion of the bottom portion 42. The hemp portion 53 and the upper portion of the cup-shaped portion are provided with pumps from the upstream side. 62. Under g 63 : 8 = Function of adjusting the flow rate of the cleaning liquid.: Inner: ? The valve 66c is connected to the gas phase portion of the buffer tank 65. The human side is rolled and connected to the pressurized gas supply source 67. Cut the s 66a 梓6^i£52ai spoon on the downstream side of the buffer to temporarily store the cleaning fluid buffer Cao 65
t 與廢棄液體“連接，、S 65a 〇 4連接另外’在緩衝槽65内設置了液面檢測計 衝:f侧，當液面檢測計⑸的液面： 狀部40供給新的洗淨液刀換到洗淨液供給源60側，以對杯 斜角杯角 面向晶圓W㈣面周__方式設置 9 201133588 圖中，顯不的配管連接清洗液供給源。 5亥杯狀部40被收納在框體80内，該框體80的側壁利用擔門 =、開閉’並設有透過圖中未顯示的運送臂將晶圓W送出送入=送 ^达入口 81。在該框體8〇内的上部設有風扇過濾單元（ffu)83， =FFUS3具有透過上方連接之配管84將清淨氣體供給到框體⑽ ΓοΓϋΙ1!氣流的功能。另外’在框體⑽的底部設有對該框體 邛的豕軋進行抽吸排氣的排氣管85。該FFU83的下 框杯內狀部4〇的排氣管35以及排氣管85的抽吸排氣配合，^ 框體80内以及杯狀部40内形成下降氣流。 在 嘴72才内在杯狀部4〇的上方設置了喷吐抗_的抗银劑喷 過供仏管脚溶劑的溶劑喷嘴73。該等噴嘴分別透 且可^ Η φ ^連接到抗侧供給源74錢溶舰給源75， 部的上方的既定位置與杯狀 92、記憶部％ '資料_二等== 碟、圮憶卡等記憶媒體安裝到 〃、忐碟、磁先 部32、抗飯劑供給系、統95、旬心1 轉驅動 淨液供給系統96係指圖6所矛%專構件連接。洗 62、切換閥61以及液面檢測計‘等’ ^ =機器群，例如泵 佈參數群都儲存了晶圓W的轉速° 己憶93中的每組塗 劑液的噴吐_諸。例如當財时吐㈣、抗银. 併取得晶圓W的轉速資料、洗潘二數群1的貧料時，便可一 資料，並可根據該等資料控制旋轉料、抗钮劑液的噴吐 洗淨液供給系統96。 ‘、動。P 32、抗蝕劑供給系統95、 接著，說明上述實施態樣的作 —個實施例，圖9係表示晶圓w 二圖δ係表示塗佈參數群的 關係的—個實施例。首先，用圖中=速與洗=液的喷吐量之間的 <颂不運送臂將晶圓w從送出 201133588 81送入框體80内’與旋轉驅動部32組合而在圖中未顯示 = ΐ旋轉夾頭31上升，將晶圓W載置在該旋轉夾頭31上， 杯g 40½空。另之/，曰旋轉夹頭31下降’晶圓W被收納到 m匕 晶圓％傳遞到旋轉夾頭μ上也可以利 用圖中未顯示的升降銷來進行。此時，在杯狀部4 下降=，該下降氣流流過環狀流路，被排氣管35翻成刚述的 外:“的時如 更高時，將切換_ =比設定液面水平t "Connected to the waste liquid, and connected to S 65a 〇4." A liquid level gauge is provided in the buffer tank 65: the f side, when the liquid level of the liquid level detector (5): 40 is supplied with a new washing liquid The knife is changed to the side of the cleaning liquid supply source 60, so that the cup bevel angle is facing the wafer W (four) surface circumference __ mode setting 9 201133588 In the figure, the piping is connected to the cleaning liquid supply source. The casing 80 is housed in the casing 80, and the side wall of the casing 80 is fed and fed to the entrance 81 by means of a transport arm that is not shown in the figure by means of a gate=, opening and closing'. A fan filter unit (ffu) 83 is provided in the upper portion of the crucible, and =FFUS3 has a function of supplying clean gas to the casing (10) ΓοΓϋΙ1! through the pipe 84 connected above. In addition, the frame is provided at the bottom of the casing (10). The exhaust pipe of the body is exhausted to exhaust the exhaust pipe 85. The exhaust pipe 35 of the lower cup inner portion of the FFU 83 and the exhaust pipe of the exhaust pipe 85 are fitted, and the casing 80 is inside and below. A downward flow of air is formed in the cup portion 40. In the mouth 72, an anti-silver agent is sprayed over the cup portion 4A. The solvent nozzle 73 of the foot solvent. The nozzles are respectively permeable to φ φ ^ and connected to the anti-side supply source 74 to the source 75, the predetermined position above the portion and the cup 92, the memory portion 'data _ second, etc. == Disc, memory card and other memory media installed to 〃, 忐 disc, magnetic head 32, anti-rice supply system, system 95, -12-turn drive liquid supply system 96 refers to Figure 6 spear% special components Connection, washing 62, switching valve 61, and liquid level detector 'etc. ^ ^ The group of machines, for example, the pump cloth parameter group, stores the rotational speed of the wafer W. The ejection of each set of the coating liquid in the memory 93. For example, when the money is spit (4), anti-silver, and the data of the rotational speed of the wafer W and the poor material of the washing group II are obtained, a data can be obtained, and the rotating material and the anti-button liquid can be controlled according to the data. The ejection cleaning liquid supply system 96. ', the movement P 32, the resist supply system 95, and the following description of the embodiment will be described. FIG. 9 shows the wafer w. An example of the relationship of the parameter groups. First, use the <颂 not transport arm between the = speed and the washing liquid w is fed into the casing 80 from the delivery 201133588 81. The combination with the rotary drive unit 32 is not shown in the figure. ΐ The rotary chuck 31 is raised, and the wafer W is placed on the rotary chuck 31. The cup g 401⁄2 is empty. Alternatively, the crucible chuck 31 is lowered. The wafer W is stored in the m crucible and the % is transferred to the spin chuck μ. This can also be performed by using a lift pin (not shown). 4 falling =, the descending airflow flows through the annular flow path, and is turned into the outer part by the exhaust pipe 35: "When the time is higher, it will switch _ = than the set liquid level
It狀部4〇内的周向上並排的貫通;L 51ί吐到外側:1:42 去。然後，洗淨液朝外側杯狀部42 下方流 口 5lb所喷吐的、」的下方、_别進’與1¾接喷吐 成洗淨液的液膜^及外側杯狀部42的整個周圍，形 存。另外53:，狀部4〇的外部的緩衝槽65暫時儲 杯狀部40 出的洗淨液被廢棄液體管路34排出到 接著，旋轉夾頭31m ^ 8的時刻⑴。旋轉的晶圓f fm的轉速旋轉（圖 狀部41與外側杯狀部42 f 形成於内地 杯狀部4〇的外部去。另外路44,被排氣管％排出到 晶圓W的中心邱上方你⑸破目中未顯示的移動機構預先移動到 ，圓w;=;二 圓W-要開始旋轉 表面。之後，讓溶劑嘴嘴73 p 預濕動作以潤濕該晶圓W的 移動到晶圓w的中心部上方待機位置同時將抗蝕劑喷嘴72 然後，抗敍劑喷嘴72斜曰门、 ，抗钱劑，因為晶圓w ^81:=央部喷吐抗_。所喷 散同時多餘的抗餘劑從晶圓= 2中^向周圍部位擴 圓W的表面被甩出，然後被流過外側杯 201133588 狀部42的内壁面的洗淨液沖 狀部40的外部去。另外，；排水^53排出到杯 的下降氣流流顿狀流路44，被劑的一部分’乘著前述 部去，抗·水氣的大部分如目n所f 5排立出到杯狀部40的外 此時由於設置在相杯狀部42 = 口HI,杯狀部42。 旋轉方向相同的方向，故洗淨 ^土口训朝向與晶圓W的 方向流去。因此，2淨=;，二與，W的旋轉方向相同的 之間的相對速度變小，抗飯劑^ ^出來的抗_水氣二者 捕捉到的抗㈣]水氣，i洗二=淨液捕捉。洗淨液所 面，被排水部卜側杯狀部42的内壁 内 64 Ϊ ，i面亦P，洗乎液在外側杯狀部42的内壁面捕捉 劑水氣之後，被回收，除去微粒等雜質，供給==== 内壁面以再姻捉抗蝴水氣’織重複整個過程。 、 在抗钱劑塗佈處理終了之後，使抗飯劑喷嘴7 ，，同時將晶圓W的轉速減到100rpm (圖8的時刻⑴。此時曰 ^ 很低’故可確保晶圓w表面上的抗侧液膜的平: 此時雖知也會產生抗飯劑水氣，但比起晶圓W的轉速很 狀態，所產生的抗鋪水氣比較少，所飛散出來的抗钱劑水 速度也比較慢，因此利用控制部將洗淨液的噴吐量設定成參數 所記載的喷吐量例如l〇〇cc/min，便可捕捉到該抗蝕劑水^。 接著，依照參數群將晶圓W的轉速提升到1000rpm，並將 淨液的喷吐量設定為20〇CC/min (圖8的時刻t3)。在該狀態下經 巧既定的時間例如20秒鐘左右，調整抗钱劑膜厚同時讓抗^劑g 燥以形成抗蝕劑膜。洗淨液的喷吐在抗蝕劑的喷吐停止後持續進 行例如5秒鐘’在圖8的時刻t3,停止喷吐洗淨液。 、灵 、之後，利用斜角洗淨喷嘴71對晶圓W的背面周圍部位噴吐 清洗液亦即溶劑（圖8的時刻t4)。該清洗液喷吐進行例如$秒鐘， 12 201133588 乂洗淨曰曰圓W的月面周圍部位的抗姓劑。另外，如圖I]所示的 雖^旋轉中的晶圓W將清洗液甩掉，然而由於預先在清洗液的喷 吐月’j例如5秒前（圖8的時刻t4,），利用流路形成構件5〇讓洗淨 液流過外侧杯狀部42的内壁面以形成洗淨液的液膜，故會像上述 那，，清洗液的水氣會被洗淨液的液膜所捕捉。此時洗淨液的 吐置為例如200cc/iinin。 、 、接著’讓晶圓你的轉速上升到2500rpm，進行從晶圓w甩掉 清^液的步驟（圖8的時刻t5)。該甩掉清洗液的步驟進行例如5 秒鐘，洗淨液的喷吐量設定為例如3〇〇cc/min。然後，將晶圓w 設為IGGOrpm (圖8的t6) ’讓晶圓w持續旋轉既定時間， 使其乾燥。之後，停止晶圓W的旋轉（圖8的⑺，與上述 時相反的順序將晶圓料遞到運送臂上，從抗姓劑塗佈裝 置运出。 關於洗淨㈣供給，雖會將流路形成構件 的内壁面所供給的洗淨液再次利用，然伴 的洗淨液會揮發，當循環的洗淨液量變少 檢測計65a所檢測到的液面斜在設定液面水平以下日^ 切換閥〖使流路與洗淨液供給源6〇側連接 = 60供給新的洗淨液。 另外’如上所義錢佈參數群巾塗騎_佈 塗佈前後很短的時間），在上述參數群中洗^ 的關係設定成如圖9之表袼所示的數值轉迷 液而已，當晶圓W的轉速為〇時，讓 \早^屯，吐洗淨 惟亦可讓洗淨液的喷吐停止^ Τ讓洗淨液巧吐5〇<_， 量的=圖^與水氣飛散 水氣飛⑽絲賴高，用來抑制 二，飛散量就會變多。另外，可知在ίί速 特性’以上述方式調整洗淨液的喷吐量。另外，對4用 201133588 群而言，洗淨液的噴吐量並不—^要因應晶圓 晶圓w以從該晶圓w甩出抗 液捕捉抗狀=〇納的内周圍面供給洗淨液，用該洗淨 杯狀部40内，晶圓w飛散出來而碰撞到 只要增加杯狀邻4n 1弹。雖…、:s水氣在杯狀部40内壁反彈時， 内逆流回來的魏量，的^的，便可抑制從杯狀部40 場内對處理裝量’故能約因應工 另外上述貫施態樣更具備以下的優點。 少洗液會被排水部53回收再利用，故可減 唼^由於喷吐洗淨液的泵62，會因應晶圓W的轉速而㈣ 冼淨液的喷吐量，故能夠節省泵 而控制 5的捕捉更有效率地進行。另外，由於對晶圓水 狀部4〇的」先淨處理能夠同時進行，故可提高產量:处理與杯 上述實施態樣在程序參數中寫人洗淨液 f數^賴應時序（結果是對應晶圓 I里ϋ二取 應表該表讀取對應晶圓^之轉速的的對 水軋捕捉液並非僅限於使用洗淨液， 货土里。 ，，劑塗佈裝置之外，如背景技術所記載的，亦二， 置、洗淨裝置。 w j用於顯影裝 以上從與S曰圓W相同高度或比其更高的 ^内周圍面供給水氣捕捉液」此點是必要的 =^大部40 供給口 5ib在比晶㈣的表面更低的位置朝例如的 捉液，結果捕捉液到達與晶圓％表面相同高度或比其更 14 201133588 包含在上述括號内容的涵義内，亦即包含在本發明的 °m 14 ^ 周向上形成山部盘谷3反與f部朝縱向並排延伸，藉此在 上以喷吐π張開的良形狀。在該内壁面的表面 Ξ轉； 轉方向而溢出’、__面流向下方。因此，由， 度她職寬梅的賴，故跑整個内 【圖式簡單說明】 ® 2(a) . (b)i Ιΐϊ^ ° 位置關係的説日謂。 衣㈣㈣杯狀部與晶圓的 亥抗裝置的外側杯狀部 。 意圖 示=該抗蝕劑塗佈裝置的控制部的構： 圖係表不晶_塗佈參數群與洗淨液的嘴吐量的對應關係 圖9係表示晶_轉速與洗淨液㈣吐量_係表。 方式表示洗淨液循環部的構造的示 圖 圖 15 201133588 圖係説明從洗淨液噴吐口噴吐洗淨液的情況的説明圖。 圖11係說明晶圓所甩出之抗飯劑水氣被洗淨液捕捉的情況的 說明圖。 圖12係說明晶圓所甩出之清洗液被洗淨液捕捉的情況的説明 圖。 圖13係表示水氣的飛散量與洗淨液的喷吐量的相關關係的相 關圖。 ,圖14係以示意方式表示另一實施態樣之抗蝕劑塗佈裝置的洗 淨液噴吐口的示意圖。 115係以示意方式表示另一實施態樣之抗蝕劑塗佈裝置的洗 淨液噴吐口的示意圖。 ^ 16係以示意方式表示從該洗淨液喷吐口喷吐洗淨液的情況 的不思圖° 圖17係習知的抗蝕劑塗佈裝置的縱剖面圖。 【主要元件符號說明】 W晶圓 U旋轉夾頭 U旋轉驅動部 13處理液噴嘴 14廢棄液體管路 15排氣管 16風扇過濾單元（FHJ) 2〇杯狀部 ’ 31旋轉失頭 32旋轉驅動部 34廢棄液體管路 35排氣管 4〇杯狀部 41内側杯狀部 16 201133588 41a引導部 41b圓板部 42外侧杯狀部 42a圓筒部 42b傾斜壁 44環狀流路 50流路形成構件 50a流路 51貫通孔 51a引導蓋部 51b開口部 52供給管 52a分支管 53排水部 54回收管 60洗淨液供給源(洗淨液槽) 61切換閥 62泵 63過濾、器 64氣動閥 65緩衝槽 65a液面檢測計 66a配管 66b分支管 66c抽氣用配管 66d配管 67加壓氣體供給源 68廢棄液體部 71斜角洗淨喷嘴 , 71a喷吐口 17 201133588 72抗蝕劑噴嘴 72a供給管 73溶劑噴嘴 73a供給管 74抗蝕劑供給源 75溶劑供給源 80框體 81送出送入口 82擋門 83風扇過濾單元（FFU) 84配管 85排氣管 90控制部 91中央運算處理裝置（CPU) 92程式 93記憶部 94資料匯流排 95抗蝕劑供給系統 9 6洗淨液供給系統 111洗淨液喷吐口 120溝部 121洗淨液喷吐口 S山部的頂部之間 r半徑 R距離 Θ角度 Φ角度 VI、V2、V3 閥門 18The It is in the circumferential direction of the 4〇 side by side; L 51ί spit to the outside: 1:42 to go. Then, the cleaning liquid is discharged to the entire circumference of the liquid film and the outer cup portion 42 which are ejected to the lower side of the flow port 5lb which is discharged from the lower side of the outer cup portion 42 and are discharged into the cleaning liquid. Save. Further, 53: the buffer tank 65 outside the temporary portion 4 is temporarily discharged from the waste liquid line 34 by the waste liquid line 34, and then the timing (1) of rotating the chuck 31 m ^ 8 is performed. The rotation speed of the rotating wafer f fm is rotated (the pattern portion 41 and the outer cup portion 42 f are formed outside the inner cup portion 4 ). The other portion 44 is discharged to the center of the wafer W by the exhaust pipe %. Above you (5) the moving mechanism not shown in the mesh is moved to the circle w;=; two circles W- to start rotating the surface. Then, let the solvent nozzle 73 p pre-wet action to wet the movement of the wafer W to The standby position above the center portion of the wafer w simultaneously exposes the resist nozzle 72, and then the anti-sludge nozzle 72 is tilted, and the anti-money agent is used because the wafer w ^81:=the central portion of the spitting resistance _. The excess anti-surplus agent is scooped out from the wafer = 2 to the surface of the peripheral portion W, and then flows through the outside of the cleaning liquid portion 40 of the inner wall surface of the outer cup 201133588 portion 42. , the draining gas 53 is discharged to the falling airflow of the cup, and the flow path 44 is taken by the part of the agent, and the majority of the anti-moisture gas is discharged to the cup portion 40 as shown in FIG. At this time, since it is disposed in the phase cup portion 42 = the port HI, the cup portion 42. The direction of rotation is the same direction, so the cleaning direction of the soil is directed to the wafer W. The direction flows. Therefore, the relative speed between 2 and 2, and the direction of rotation of W is small, and the anti-soil resistance of the anti-soil agent is captured by the anti-water gas. i wash 2 = clean liquid capture. The surface of the washing liquid is 64 Ϊ in the inner wall of the cup portion 42 of the drain portion, the surface of the surface is also P, and the washing liquid is trapped on the inner wall surface of the outer cup portion 42. After that, it is recovered, and impurities such as fine particles are removed, and the inner wall surface is supplied to re-make the anti-foaming water to repeat the entire process. After the anti-money agent coating treatment is finished, the anti-rice nozzle 7 is made. At the same time, the rotation speed of the wafer W is reduced to 100 rpm (time (1) in Fig. 8. At this time, 曰^ is very low', so that the anti-side liquid film on the surface of the wafer w is flat: at this time, it is also known that anti-rice water is generated. Gas, but compared with the state of the rotation speed of the wafer W, the generated anti-paving gas is relatively small, and the speed of the anti-money agent water that is scattered is relatively slow. Therefore, the control unit sets the discharge amount of the cleaning liquid as a parameter. The amount of discharge described is, for example, 10 cc/min, and the resist water can be captured. Next, the rotation speed of the wafer W is increased in accordance with the parameter group. 1000 rpm, and the discharge amount of the clean liquid is set to 20 〇CC/min (time t3 in Fig. 8). In this state, the time of the anti-money agent film is adjusted and the anti-agent is adjusted by a predetermined time, for example, about 20 seconds. g is dried to form a resist film. The ejection of the cleaning liquid is continued for 5 seconds after the ejection of the resist is stopped. At the time t3 of Fig. 8, the ejection of the cleaning liquid is stopped. The cleaning nozzle 71 discharges a solvent, that is, a solvent, which is a cleaning liquid, to the periphery of the back surface of the wafer W (time t4 in Fig. 8). The cleaning liquid is ejected for, for example, $ seconds, 12 201133588 乂 Washing the circumference of the moon around the moon W Anti-surname agent. Further, although the wafer W that is rotating as shown in FIG. 1] is smashed out of the cleaning liquid, the flow path is utilized because the rinsing period of the cleaning liquid is before, for example, 5 seconds before (time t4 in FIG. 8). The forming member 5 allows the cleaning liquid to flow through the inner wall surface of the outer cup portion 42 to form a liquid film of the cleaning liquid. Therefore, as described above, the moisture of the cleaning liquid is caught by the liquid film of the cleaning liquid. At this time, the discharge of the washing liquid is, for example, 200 cc / iinin. Then, the step of raising the wafer rotation speed to 2500 rpm and removing the cleaning liquid from the wafer w (time t5 in Fig. 8). The step of removing the cleaning liquid is performed, for example, for 5 seconds, and the discharge amount of the cleaning liquid is set to, for example, 3 〇〇 cc / min. Then, the wafer w is set to IGGOrpm (t6 of Fig. 8), and the wafer w is continuously rotated for a predetermined period of time to be dried. Thereafter, the rotation of the wafer W is stopped ((7) of FIG. 8 , and the wafer material is transferred onto the transport arm in the reverse order from the above, and is carried out from the anti-surname application device. Regarding the cleaning (four) supply, the flow will be flown. The cleaning liquid supplied from the inner wall surface of the path forming member is reused, and the cleaning liquid accompanying the volatilization is volatilized. When the amount of the circulating cleaning liquid is reduced, the liquid level detected by the detecting meter 65a is below the set liquid level. The switching valve is such that the flow path is connected to the cleaning liquid supply source 6 side = 60 to supply a new cleaning liquid. In addition, the above-mentioned meaning of the money cloth parameter group towel is applied for a short period of time before and after the coating, in the above The relationship of the washing in the parameter group is set to the numerical value shown in the table of Fig. 9. When the rotation speed of the wafer W is 〇, let the \ early ^ 屯, spit and wash, but also let the cleaning liquid The spit stop stops ^ Τ let the washing liquid squirt 5 〇 < _, the amount = map ^ and the water and gas fly water and air fly (10) silk high, used to suppress two, the amount of scattering will become more. Further, it is understood that the discharge amount of the cleaning liquid is adjusted in the above manner in the ί speed characteristic. In addition, for the 201133588 group, the amount of the cleaning liquid is not washed, and the wafer wafer w is supplied to the inner peripheral surface of the wafer from the wafer w. In the cleaning cup 40, the wafer w is scattered and collided as long as the cup-shaped adjacent 4n 1 bomb is added. When the water vapor in the inner wall of the cup 40 rebounds, the amount of Wei in the back of the cup 40 can suppress the amount of processing from the cup 40, so it can be used in addition to the above. The aspect has the following advantages. Since the small amount of the washing liquid is recovered and reused by the drain portion 53, the pump 62 that discharges the washing liquid can reduce the amount of the liquid to be ejected depending on the number of revolutions of the wafer W, so that the pump can be saved and the control 5 can be saved. Capture is done more efficiently. In addition, since the "first net processing" of the wafer water portion 4 can be simultaneously performed, the yield can be increased: the processing and the cup embodiment described above are written in the program parameters, and the number of the cleaning liquids f is determined. Corresponding wafer I in the table should read the table to read the corresponding wafer speed of the water-rolling capture liquid is not limited to the use of cleaning liquid, in the soil, ,, other than the agent coating device, such as background According to the technology, it is necessary to install and clean the device. wj is used for the developing device to supply the water-capturing liquid from the inner surface of the same height as or higher than the S-circle W. ^The majority 40 supply port 5ib is at a lower position than the surface of the crystal (four) toward the liquid capture, for example, the capture liquid reaches the same height as or more than the surface of the wafer %. 201133588 is included in the meaning of the above brackets, That is, it is included in the circumferential direction of the invention, and the formation of the mountain valley 3 and the f portion are extended side by side in the longitudinal direction, whereby the shape of the inner wall surface is twisted and turned; The direction overflows, and the __ surface flows downward. Therefore, by her degree, she is wide Lai, so run the whole [simplified description of the schema] ® 2 (a). (b) i Ιΐϊ ^ ° positional relationship said. Clothing (four) (four) cup and wafer outer anti-device's outer cup Illustrated = the structure of the control unit of the resist coating apparatus: Fig. 9 is a graph showing the relationship between the patterning group and the nozzle discharge amount of the cleaning liquid. Fig. 9 shows the crystal speed and the cleaning liquid. (4) 吐 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ FIG. 12 is an explanatory view showing a state in which the cleaning liquid drawn from the wafer is captured by the cleaning liquid. FIG. 13 is a diagram showing the amount of water vapor scattering and the amount of water vapor. FIG. 14 is a schematic view showing a cleaning liquid ejection port of a resist coating apparatus of another embodiment. 115 is a schematic representation of another A schematic view of a cleaning liquid ejection port of a resist coating apparatus of an embodiment. ^ 16 is shown in a schematic manner FIG. 17 is a longitudinal cross-sectional view of a conventional resist coating apparatus. [Main component symbol description] W wafer U rotating chuck U rotation Drive unit 13 treatment liquid nozzle 14 waste liquid line 15 exhaust pipe 16 fan filter unit (FHJ) 2 cup portion '31 rotation loss head 32 rotation drive unit 34 waste liquid line 35 exhaust pipe 4 cup portion 41 inner cup portion 16 201133588 41a guide portion 41b disc portion 42 outer cup portion 42a cylindrical portion 42b inclined wall 44 annular flow path 50 flow path forming member 50a flow path 51 through hole 51a guide cover portion 51b opening portion 52 Supply pipe 52a branch pipe 53 drain portion 54 recovery pipe 60 cleaning liquid supply source (washing liquid tank) 61 switching valve 62 pump 63 filter, 64 pneumatic valve 65 buffer tank 65a liquid level detector 66a piping 66b branch pipe 66c pumping Gas piping 66d piping 67 pressurized gas supply source 68 waste liquid portion 71 oblique cleaning nozzle, 71a ejection port 17 201133588 72 resist nozzle 72a supply tube 73 solvent nozzle 73a supply tube 74 resist supply source 75 solvent supply Source 80 frame 81 sends out the entrance 82 block door 83 wind Fan Filter Unit (FFU) 84 Pipe 85 Exhaust Pipe 90 Control Unit 91 Central Processing Unit (CPU) 92 Program 93 Memory Unit 94 Data Bus 95 Resist Supply System 9 6 Wash Solution Supply System 111 Wash Solution Port 120 groove portion 121 washing liquid spouting port S between the top of the mountain portion r radius R distance Θ angle Φ angle VI, V2, V3 valve 18