201131818 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明係關於一種化合物半導體封裝結構及其製造方 0 * 、 [0002] 〇 [先前技術3 化合物半導體例如發光二極體（light emitting d. ode，LED)與傳統燈泡比較具有較大的優勢，例如 小、壽命長、省電、無水銀污染等特性。因此， ，隨著發 光效率不斷地提升，發光二極體在某些領域已漸辦 曰光燈與白熱燈泡。舉例來說，需要高速反應的掃打。 光源、液晶顯示器的背光源、汽車的儀表板照明光片 交通號諸燈以及一般的照明裝置等都已應用發光二極體 。習知發光二極體使用環氧樹脂做為封膠材料。封勝製 程通常係以射出成型、轉移成型或鑄造方式完成。固化 環氧樹脂封膠具有相對高之硬度，其提供刮傷與磨耗阻 力、高剛性、及高初始光傳導性。傳統封膠LED元件具有 各種尺寸與類型’如卵形LED燈、圓形LED燈、晶片[ED 及塑膠引腳晶片承載器（Plastic Leaded chip eerier; PLCC) 封裝。 [0003] 圖1A為習知一種化合物半導體封裝結構的俯視圖，圖 為圖1A沿A至A’面之截面圖。請參照圖ία與圖1B，習知 化合物半導體封裝結構100包括一底座部124、一反射杯 122、一導線架（lead frame)ll〇、與一化合物半導體 晶片130。導線架11 0包括一第一導腳（與一第 二導腳114，而前述第一導腳112與前述第二導腳114之 099107387 表單編號A0101 第3頁/共32頁 0992013336-0 201131818 -部分被包覆於前述底座部124與前述反射杯i22之間。 前述反射杯122位於前述底座部m之上側並圍繞形成一 容置區12G。前述化合物半導體W130配置於前述容置 區120内’且以金屬導線116將前述化合物半導體晶片 130分別電性連接至第—導腳112與第二導腳ιΐ4。另外 ，前述底座124、反射杯122 '容置區⑵、第一導腳ιι2 及第二導腳114即形成-化合物半導體之封裝殼體。 [0004] [0005]201131818 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a compound semiconductor package structure and a method for fabricating the same. [0001] [Prior Art 3 Compound semiconductor such as a light emitting diode (light emitting diode) d. ode, LED) has great advantages compared with traditional light bulbs, such as small, long life, power saving, and mercury-free pollution. Therefore, as the luminous efficiency continues to increase, the light-emitting diodes have gradually implemented daylighting lamps and incandescent light bulbs in some fields. For example, a sweep of high speed response is required. Light-emitting diodes have been applied to light sources, backlights for liquid crystal displays, dashboard illuminations for automobiles, traffic lights, and general lighting devices. Conventional light-emitting diodes use epoxy resin as a sealing material. The sealing process is usually done by injection molding, transfer molding or casting. Curing Epoxy sealants have a relatively high hardness, which provides scratch and abrasion resistance, high stiffness, and high initial photoconductivity. Traditional encapsulated LED components are available in a variety of sizes and types, such as oval LED lamps, round LED lamps, wafers [ED and Plastic Leaded Chip eerier (PLCC) packages. 1A is a top plan view of a conventional compound semiconductor package structure, and is a cross-sectional view taken along line A to A' of FIG. 1A. Referring to FIG. 1A and FIG. 1B, a conventional compound semiconductor package structure 100 includes a base portion 124, a reflective cup 122, a lead frame, and a compound semiconductor wafer 130. The lead frame 110 includes a first lead (and a second lead 114, and the first lead 112 and the second lead 114 are 099107387. Form No. A0101 Page 3 / Total 32 Pages 0992013336-0 201131818 - A portion of the compound portion W is disposed between the base portion 124 and the reflective cup i22. The reflector cup 122 is disposed on the upper side of the base portion m and surrounds the accommodating portion 12G. The compound semiconductor W130 is disposed in the accommodating portion 120. The compound semiconductor wafer 130 is electrically connected to the first guiding pin 112 and the second guiding pin ι 4 by a metal wire 116. In addition, the base 124, the reflective cup 122' accommodating area (2), the first guiding pin ι and the first The second lead 114 forms a package housing of a compound semiconductor. [0004] [0005]
前述化合物半導體封裝殼體之形成可藉由圖2為習知一種 化合物半導體封裝殼體之模具說明。模具_具有—方形 模穴224即形成-底座鄭124，其中包含_勝體&人口 240。相對於前述方形模穴m為—環形模穴m即形成 -反射杯122及-容置區12Q。前述方形模穴⑽與環形 模穴222之間夾著第一金屬片212與第二金屬片214做為 導線架110錢伸出前賴具，且彼此料—間距。在灌 膠及脫模之後’前述第—金屬片212與第二金屬片214由 底面兩側邊延伸再彎折並貼祕敍124職第一導腳 112及第二導腳114。 然而導腳112、114與底座部124兩側邊之緊鄰結構易有 結構變形之問題發生，影響成品結構與壽命習知為避 免導腳112、114彎折與底座部124彎角處接觸產生應力 ’或保留提供給各延伸導腳彎折過程之加工空間，底座 124臨導腳112、114之兩侧邊會加以内縮設計，參閱圖 3A可理解習知封裝殼體之底座324臨導腳之轉折處，與第 —導腳312、第二導腳314彎折有一間隙318。另外，為 進—步了解前述封裝殼體底座部之外形，參考圖3B為圖 099107387 表單蝙號A0101 第4頁/共32頁 0992013336-0 201131818 3Α 省知封裝讀底座之截面心咖相則 體底座之仰視圖。㈣3Β_ 裳殼 殼體之底座部内縮之兩侧邊，^現“迷封裝 以表現出前述封裝㈣之底另°㈣的仰式圖可 中D為則述封跋殼體之底座部之底面部 其 裝殼體之底座部内縮之兩侧邊，Ε為前述 ^述封 部垂直之兩側邊。 祖 < 底座 [0006] Ο 个避 ……一化合物半導體封 益PLCC承«之耐熱性，進—步對於_之塑= 陶曼塑料。另外’為增益將來發光效益，在塑料中Γ 摻 非導電金屬氧祀物粉料，例如氧化鎂、魏化鎂、二摻 化鈦等’以增加封裝殼體表面之光反射絲^由於塑= 分料中無機粉槪例增加，以上這些作法將使鱗模成型 技術難度增加，尤其成型後封裝殼體脫模難度增加爹 ο 響成型成品的良率。參酌另一種習知封裝殼體之模具鈐 構400 ’如圖4。塑料係由底座部424之注入口 440注入， 習知封裝殼體結構對於底座部424臨導腳彎折兩侧壁的内 縮設計亦有利於封裝殼體之初胚自模具脫出’不過隨著 塑料無機添料之的增加該結構設計對脫模仍助益仍為有 限0 [0007] 【發明内容】 本發明之一目的係為提高化合物半導體封裝結構之製造 良率，降低製造成本。 本發明之另一目的係為提高化合物半導體封裝結構之光 反射率以提高元件之出光效率。 099107387 表單塢號Α0101 第5頁/共32頁 0992013336-0 [0008] 201131818 [0009] 鑒於上述之發明背景中，為了符合產業利益之需求，本 發明提供一種化合物半導體之封裝結搆，包含：一底座 ，一反射杯設置於所述底座上表面形成一容置區，至少 一化合物半導體晶片設置於所述容置區，至少一導線架 設置於所述底座上表面與所述反射杯之間以及延伸至所 述底座下表面，一封膠填充於所述容置區並覆蓋所述至 少一化合物半導體晶片，其改良在於所述底座部四面側 壁向内傾且鄰接底座下表面形成一似四方錐形。 [0010] 本發明還提供一種化合物半導體封裝結構之製造方法， 包含：提供一模具具有四方錐形第一模穴及一自所述第一 模穴之一侧延伸之環形第二模穴，其中所述第一模穴含 有一注入口；放置複數片金屬片位於所述第一模穴與所 述第二模穴之間，其中所述複數片金屬片之間有一間隔 距離並且所述複數片金屬片至少有一端延伸出所述模具 :由所述注入口注入塑料填充所述第一模穴及所述第二 模穴；冷卻該模具，所述填充於第一模穴中之塑料形成 一底座部，所述填充於第一模穴中之塑料形成一反射杯 ，所述反射杯於所述底座部一側圍設一容置部；打開該 模具並且頂出所述底座部及反射杯之一體成型結構；彎 折所述複數片金屬片之延伸端貼附於該底座部下表面以 形成一導線架；固定至少一化合物半導體晶片於所述容 置部；填充一封膠於所述容置部以及覆蓋所述至少一化 合物半導體晶片。 【實施方式】 [0011] 本發明在此所探討的方向為一種化合物半導體封裝結構 099107387 表單編號A0101 第6頁/共32頁 0992013336-0 201131818 ο ^ [0012] 、裝造方法。為了能徹底地瞭解本發明’將在下列的 祂述中提出詳盡的步驟及其組成。顯然地，本發明的施 仃並未限定於化合物半導體之封裝結構及其製造方法之 贫者所熟習的特殊細節。另一方面，眾所周知的組成 或步驟並未描述於細節中，以避免造成本發明不必要之 限击 。本發明的較佳實施例會詳細描述如下，然而除了 ^些詳細描述之外，本發明還可以廣泛地施行在其他的 】中’且本發明的範圍不受限定，其以之後的專利 範圍為準。 本發明提供一種化合物半導體之封裝結構5〇〇，請參考圖 Α為本發明化备物半導體之封裝結構之俯視圖、圖π為 本發明化合物半導體之封裝結構圖5 A之B至B，截面圖以 及圖5C為本發明化合物半導體封裝殼體截面圖。封裝結 構500包括一封裝殼體52〇，一化合物半導體晶片53〇設 置於前述封裝殼體520中以及一封膠59〇。前述封裝殼體 520包含一底座524、一反射杯522、第一導腳512及第二 G 導腳514。前述底座524四面侧壁向内傾且鄰接底面部形 成似四方錐形。前述反射杯部522圍繞於前述底座524之 上方形成容置區570。前述形成底座524及反射杯524之 塑料可為聚碳酸醋（Polycarbonate，PC)、聚鄰苯-甲 醢胺酯（Polyphthalamide，PPA)、聚對苯二甲酸丁二 醇（Polybutylene Terephthalte，PBT)、聚甲基丙 烯酸曱酯（Polymethyl Methacrylate，PMMA)，或是 其他以之熱塑性樹脂等。前述塑料可添加非導電金屬氧 化物，例如氧化鎂、氫氧化鎂、二氧化鈦等材料增加反 099107387 表單編號A〇101 第7頁/共32頁 0992013336-0 201131818 530可 =提^件之出光效率。前述化合物半導體晶片 ϋ·、·:Γ光—極體、雷射二極體或是光感測晶粒等。前 述封_之膝材可為環氧樹脂（ep〇xy)、石夕膠 读明朦U Ο或氮化物（nitride)等透明0。再者，前述 可叫雜螢光轉換材料使得元件產生白光或是 、他所需之顏色。前述之螢光轉換材料可為釔鋁石榴石 )試鋁石榴石(TAG)、硫化物(sulfide )、磷化物 P P ate)、氮氧化物（oxynitride)、矽酸鹽類 (silicate)。另外，利用金屬導線516將化合物半導體 晶片530與導線架51〇進行電性連接。 [0013] 圖5D係為本發明化合物半導體之封裝結構之仰視圖前 述導線架510貼合前述之底座524上方並延伸至底座524 之下方形成第一導腳512及第二導腳514 ,做為電性連接 之功能。前述導線架510為金屬材質，例如為銀（Ag)或是 鋁（A1)等可導電材料。再者，請參考圖5E及圖5F係為本 :.Γ. " . .. , ... 發明化合物半導體封裝結構底座524之結構。由圖5Ε所示 ，前述底座524四面側壁向内傾，同時參考圖5Β和5C，其 ' . ' . V I; :;::ή .... ：-... . .. " ..：：： 第一内傾角582(註：底座524底面部和側壁間之夾角）大 於95。，與第一内傾角α相對之第二内傾角584亦大於95 。，其它二相對内傾角亦大於95°。鄰接底面部524形成似 四方錐形。前述底座524除了圖5Ε結構外，亦可為圖5F所 示之結構，將直角改為圓弧狀。 本發明之發光二極體封裝結構除了可節省塑材之使用量 外，另外在塑料中添加較高含量之非導電金屬氧化物例 如氧化鎂、氫氧化鎂、二氧化鈦等提高元件之出光效率 099107387 表單編號Α0101 第8頁Μ 32頁 0992013336-0 [0014] 201131818 ο [0015] 為提高非導電金屬氧化物在塑料中之含量以提高元件之 出光效率，在製程中更容易完整脫模而使得承栽器的製 椁良率提高，本發明同時提供一種化合物半導體封妒鈐 構之裝4方法，睛參考圖6係為化合物半導體封裝妹構 製造流程圖。 之 [0016] 冑〆步驟602 ’提供—模具包含—注人口。前述模具包人 〆第一模穴以及_相對於第一模穴之第二模穴，其 3 、Υ前 述第一拉穴含有一注入口。前述第一模穴具有—似四方 錐形之模型空間形成一底座，該第二模穴具有一曲面办 間形成反射杯。前述模具使用金屬材料可增加模具之哽 度及耐熱程度，使得模具耐用而且不會因高溫而變形。 [0017] 第二步驟604，複數個金屬片置於前述第一模穴與前述第 二模穴之間，其中前述複數個金屬片彼此之間有—間隔 且至少有一端延伸出前述模具。 [0018] 第三步驟6〇6，填充塑料。經由前述第一步驟之注入口注 入塑料至模具裡。前述塑料可為聚碳酸酯 (Polycarbonate，PC)、聚鄰苯二甲醯胺酯 (Polyphthalamide，PPA)、聚對苯二曱酸丁二醇 (Polybutylene Terephthalte，PBT)、聚甲基丙稀 酸曱酯（Polymethyl Methacrylate，PMMA)，或是其 他以之熱塑性樹脂等。再者可在塑料裡添加非導電金屬 氧化物，例如氧化鎂、氫氧化鎂、二氧化鈦等材料增加 反射率同時提高元件之出光效率。為考慮各項機械性質 099107387 表單編號A0101 第9頁/共32頁 0992013336-0 201131818 測試，包含溶融指數（melting index，MI)、衝擊強度 (impact strength)、抗拉強度（tensi 1 e strength) 以及熱變形溫度等測試，塑料之比例大約為熱塑性樹脂 50~99重量百分比％以及非導電金屬氧化物卜50重量百分 比％。前述比例可依照需求調整。 [0019] 第四步驟608，合模。熱塑性樹脂在常溫下通常為顆粒狀 ，加熱到一定溫度後變成熔融的狀態，將其冷卻後則固 化成型。射出成形的原理是將熱塑性樹脂以定量、間歇 的方式，自進料漏斗加入，送至加熱管中加熱使其融化 後，透過活塞住或推頭向前推進，經過喷嘴射入模具的 模穴中。當模穴充滿後，模具的冷卻系統將塑膠料冷卻 成固體，待降低到適當溫度後，即可開模。前述開模所 得之模型為一反射杯圍繞出一容置區並位於一底座之一 侧所形成之一體成型，然後合模繼續下一個射出循環。 [0020] 第五步驟610，彎折複數個金屬片。經上述開模後，前述 複數個金屬片固定在前述底座及前述反射杯之間並延伸 出前述底座及前述反射杯兩側，然後利用機械將覆數個 金屬片之延伸端貼附於前述底座得到複數個導腳。 [0021] 第六步驟612，固晶。將至少一化合物半導體晶片設置於 前述容置區。前述至少一化合物半導體晶片可為發光二 極體、雷射二極體或是光感測晶粒等。 [0022] 第七步驟61 4，打線。利用金屬導線將前述至少一化合物 半導體晶片與複數個導腳電性連接。 [0023] 第八步驟616，封膠。前述封膠膠材可為環氧樹脂 099107387 表單編號A0101 第10頁/共32頁 0992013336-0 201131818 [0024] Ο [0025] [0026] Ο [0027] 099107387 Ρ〇ΧΥ)石夕膠' (s Η i cone)或氮化物（ηi tr i de)等透明 膠。再者，前述透明膠材可以摻雜螢光轉換材料使得元 件產生白光或是其他所需之顏色。前述之螢光轉換材料 可為釔鋁石榴石（YAG)、铽鋁石榴石（TAG)、硫化物 (SUlflde)、磷化物（Phosphate)、氮氧化物 (oxynitride)、矽酸鹽類（siUcate)。 在塑料裡添加高含量之非導電金屬氧化物雖然可增加發 光一極體承載器的光反射率’但是也增加塑料的脆裂性 ，使得脫模不易而降低承載器之製造良率。 為解決上述問題，本發明在第一步驟6〇2中的模具特別設 °十一似四方錐形的底座，因此前述底摩的四面皆内傾， 使得底座的下面積小於上面韻。冒迷四方雜形的第一内 傾角以及第二内傾角的角度大於95。。此特殊形狀可減少 底部面積與模具接觸面，有益於後續之脫模。另外前述 底座之底面角度趨於緩和，脫模時可降低缺角的情況。 再者，於第三步驟6〇p中必控制第具預熱之溫度與塑料熔 融之溫度需要相似’這是要避免填充塑料的過程中因模 具溫度較低而降低熔融塑料之溫度使之影響塑料之液態 流動性或是提早固化，導致填充不完全。 從本發明手段與具有的功效中，可以得到本發明具有諸 多的優點。首先’化合物半導體封裝結構的底座為似四 方錐形，一方面在金屬片彎折時保留一加工空間，另一 方面減少底座的厚度而提高元件之散熱功能。在製程上 ’本發明可以提高非導電金屬氧化物在塑料中的含量同 表單編號A0101 第11頁/共32頁 0992013336-0 201131818 時提高製程良率，亦可增加元件之反射率及降低製造成 本0 [0028] 顯然地，依照上面實施例中的描述，本發明可能有許多 的修正與差異。因此需要在其附加的權利要求項之範圍 内加以理解，除了上述詳細的描述外，本發明還可以廣 泛地在其他的實施例中施行。上述僅為本發明之較佳實 施例而已，並非用以限定本發明之申請專利範圍；凡其 它未脫離本發明所揭示之精神下所完成的等效改變或修 飾，均應包含在下述申請專利範圍内。 【圖式簡單說明】 [0029] 圖1A為習知一種化合物半導體封裝結構的俯視圖。 [0030] 圖1B為圖1A習知一種化合物半導體封裝結構之A至A’截 面圖。 [0031] 圖2為習知一種化合物半導體封裝結構之模具。 [0032] 圖3A為習知另一種化合物半導體封裝結構之封裝殼體的 截面圖。 [0033] 圖3B為圖3A封裝殼體之底座之截面圖。 [0034] 圖3C為圖3A封裝殼體之底座之仰視圖。 [0035] 圖4為習知另一種習知封裝殼體之模具結構。 [0036] 圖5A為本發明化合物半導體之封裝結構之俯視圖。 [0037] 圖5B為本發明化合物半導體之封裝結構圖5 A之B至B’截 面圖。 099107387 表單編號A0101 第12頁/共32頁 0992013336-0 201131818 [0038] 圖5C為本發明化合物半導體之之封裝殼體之截面圖。 [0039] 圖5D為本發明化合物半導體之封裝殼體之仰視圖。 [0040] 圖5E及圖5F係為本發明化合物半導體封裝結構之封裝殼 體之底座之仰視圖。 [0041] 圖6係為化合物半導體封裝結構之製造流程圖。 [0042] 【主要元件符號說明】 100 :習知化合物半導體封裝結構 [0043] 〇 [0044] 110 :導線架 116 :導線 [0045] 112 :第一導腳 [0046] 114 :第二導腳 [0047] 120 :容置區 [0048] 122 :反射杯 ❹ _] 124 :底座 [0050] 130 :化合物半導體晶片 [0051] 200 :習知模具 [0052] 212 :第一金屬片 [0053] 214 :第二金屬片 [0054] 222 :環形模穴 [0055] 224 :方形模穴 099107387 表單編號A0101 第13頁/共32頁 0992013336-0 201131818 [0056] 2 4 0 :注入口 [0057] 312 :第一導腳 [0058] 314 :第二導腳 [0059] 318 :間隙 [0060] 324 :底座 [0061] 400 :習知模具 [0062] 440 :注入口 [0063] 424 :底座 [0064] 500 :化合物半導體封裝結構 [0065] 510 :導線架 [0066] 512 :第一導腳 [0067] 514 :第二導腳 [0068] 516 :導線 [0069] 520 :封裝殼體 [0070] 522 :反射杯 [0071] 524 :底座 [0072] 530 :化合物半導體晶片 [0073] 570 :容置區 [0074] 582 :第一内傾角 099107387 表單編號A0101 第14頁/共32頁 0992013336-0 201131818 [0075] 584 :第二内傾角 [0076] 590 :膠 〇 099107387 表單編號A0101 第15頁/共32頁 0992013336-0The formation of the aforementioned compound semiconductor package case can be illustrated by a mold of a conventional compound semiconductor package case as shown in Fig. 2. The mold _ has a square cavity 224 which forms a base Zheng 124, which contains a _ sheng body & population of 240. With respect to the aforementioned square cavity m, the annular cavity m forms a reflective cup 122 and an accommodating area 12Q. The first metal piece 212 and the second metal piece 214 are sandwiched between the square cavity (10) and the annular cavity 222 as a lead frame 110, and are spaced apart from each other. After the filling and demolding, the first metal piece 212 and the second metal piece 214 are extended from both sides of the bottom surface and then bent and attached to the first guide pin 112 and the second guide pin 114. However, the problem that the guide legs 112, 114 and the two sides of the base portion 124 are adjacent to each other is susceptible to structural deformation, which affects the structure and life of the finished product. In order to avoid the contact between the guide legs 112, 114 and the corner of the base portion 124, stress is generated. 'Or the machining space provided for the bending process of each extension guide pin, the two sides of the base 124 guiding legs 112, 114 will be retracted. Referring to FIG. 3A, the base 324 of the conventional package housing can be understood. At the turning point, a gap 318 is bent between the first guide pin 312 and the second guide pin 314. In addition, in order to further understand the outer shape of the base portion of the package housing, refer to FIG. 3B as FIG. 099107387. Form No. A0101 Page 4 / Total 32 Pages 0992013336-0 201131818 3Α The cross-section of the package reading base is known. Bottom view of the base. (4) 3Β_ The sides of the base of the shell shell are retracted, and the current part of the base of the package (4) is displayed on the bottom side of the package (4). The sides of the base portion of the housing are retracted, and the sides are perpendicular to the two sides of the sealing portion. The ancestors < pedestal [0006] Ο 避 一 一 一 一 一 一 一 一 一 一 一 PLC PLC Step-by-step for _ plastic = Taoman plastic. In addition to 'enhance the future luminous benefits, in the plastic Γ mixed with non-conductive metal oxonium powder, such as magnesium oxide, magnesium, titanium, etc. to increase the package shell Light reflection on the surface of the body ^ Due to the increase of the inorganic powder in the plastic = compound, the above methods will increase the difficulty of the scale forming technology, especially the difficulty of demoulding the packaged shell after molding, and the yield of the finished product. Another conventional package housing mold structure 400' is shown in Fig. 4. The plastic is injected from the injection port 440 of the base portion 424. The conventional package housing structure is bent into the side walls of the base portion 424. The shrinking design is also beneficial to the initial embryonic self-modulation of the package housing. With the increase of plastic inorganic filler, the structural design is still beneficial to demoulding. [0007] [Invention] One object of the present invention is to improve the manufacturing yield of a compound semiconductor package structure. The invention aims to improve the light reflectivity of the compound semiconductor package structure to improve the light extraction efficiency of the component. 099107387 Form dock number Α0101 Page 5 / Total 32 page 0992013336-0 [0008] 201131818 [0009 In view of the above-mentioned invention, in order to meet the needs of the industrial interest, the present invention provides a package structure of a compound semiconductor, comprising: a base, a reflective cup disposed on an upper surface of the base to form an accommodating area, at least one compound semiconductor The wafer is disposed in the accommodating area, and at least one lead frame is disposed between the upper surface of the base and the reflective cup and extends to a lower surface of the base, and a glue is filled in the accommodating area and covers the At least one compound semiconductor wafer, the improvement is that the side walls of the base portion are inclined inwardly and form a quadrangular pyramid adjacent to the lower surface of the base [0010] The present invention also provides a method of fabricating a compound semiconductor package structure, comprising: providing a mold having a square tapered first mold cavity and an annular second mold cavity extending from one side of the first mold cavity Wherein the first cavity contains an injection port; a plurality of metal sheets are placed between the first cavity and the second cavity, wherein a plurality of metal sheets have a separation distance therebetween At least one end of the plurality of metal sheets extends out of the mold: filling the first mold cavity and the second mold cavity by injecting plastic into the injection port; cooling the mold, the plastic filled in the first mold cavity Forming a base portion, the plastic filled in the first cavity forms a reflective cup, the reflective cup enclosing a receiving portion on one side of the base portion; opening the mold and ejecting the base portion and a one-piece forming structure of the reflective cup; the extending end of the plurality of metal sheets is attached to the lower surface of the base portion to form a lead frame; at least one compound semiconductor wafer is fixed to the receiving portion; Describe And covering the at least one compound semiconductor wafer. [Embodiment] [0011] The invention is directed to a compound semiconductor package structure. 099107387 Form No. A0101 Page 6 of 32 0992013336-0 201131818 ο ^ [0012], mounting method. In order to fully understand the present invention, detailed steps and compositions thereof will be presented in the following description. Obviously, the application of the present invention is not limited to the specific details familiar to the poor structure of the compound semiconductor package structure and its manufacturing method. On the other hand, well-known components or steps are not described in detail to avoid unnecessary limitation of the invention. The preferred embodiments of the present invention will be described in detail below, but the present invention may be widely practiced otherwise than the detailed description, and the scope of the present invention is not limited thereto, which is subject to the scope of the following patents. . The present invention provides a package structure of a compound semiconductor. Referring to the drawings, a top view of a package structure of the semiconductor of the present invention is shown. FIG. 5 is a package structure of the compound semiconductor of the present invention. FIG. 5A to B, a cross-sectional view And Figure 5C is a cross-sectional view of the compound semiconductor package housing of the present invention. The package structure 500 includes a package housing 52, and a compound semiconductor wafer 53 is disposed in the package housing 520 and a glue 59. The package housing 520 includes a base 524, a reflector cup 522, a first guide pin 512, and a second G guide pin 514. The side walls of the base 524 are inclined inwardly and adjacent to the bottom surface portion to form a square pyramid. The reflective cup portion 522 forms an accommodating area 570 around the base 524. The plastic forming the base 524 and the reflective cup 524 may be polycarbonate (PC), polyphthalamide (PPA), polybutylene terephthalte (PBT), Polymethyl Methacrylate (PMMA), or other thermoplastic resins. The aforementioned plastic may be added with a non-conductive metal oxide, such as magnesium oxide, magnesium hydroxide, titanium dioxide, etc. The material is increased. 099107387 Form No. A〇101 Page 7 of 32 0992013336-0 201131818 530 can be used to improve the light extraction efficiency. The above compound semiconductor wafer ϋ·,·: a phosphorescent electrode, a laser diode, or a light sensing die. The knee material of the above-mentioned sealing sheet may be transparent 0 such as epoxy resin (ep〇xy), Shishi gum, 朦U Ο or nitride. Furthermore, the aforementioned fluorescent conversion material allows the component to produce white light or the color it desires. The aforementioned fluorescent conversion material may be yttrium aluminum garnet) aluminum garnet (TAG), sulfide, phosphide, oxynitride, silicate. Further, the compound semiconductor wafer 530 is electrically connected to the lead frame 51A by the metal wires 516. 5D is a bottom view of the package structure of the compound semiconductor of the present invention. The lead frame 510 is disposed above the base 524 and extends below the base 524 to form a first lead 512 and a second lead 514. The function of electrical connection. The lead frame 510 is made of a metal material, for example, a conductive material such as silver (Ag) or aluminum (A1). Furthermore, please refer to FIG. 5E and FIG. 5F as follows: . . . . . . , ... The structure of the compound semiconductor package structure base 524 is invented. As shown in FIG. 5A, the side walls of the base 524 are inclined inwardly, and referring to FIGS. 5A and 5C, the '.'. VI; :;::ή .... :-... . . . " .. ::: The first inward angle 582 (note: the angle between the bottom surface of the base 524 and the side wall) is greater than 95. The second inward angle 584 opposite the first inward angle α is also greater than 95. The other two relative inward angles are also greater than 95°. The abutting bottom surface portion 524 is formed like a square pyramid. The base 524 may have the structure shown in Fig. 5F in addition to the structure of Fig. 5, and the right angle is changed to an arc shape. In addition to saving the amount of plastic material used, the light-emitting diode package structure of the present invention additionally adds a higher content of non-conductive metal oxide such as magnesium oxide, magnesium hydroxide, titanium dioxide, etc. to the plastic to improve the light-emitting efficiency of the component 099107387. No. 1010101 Page 8 Μ 32 pages 0992013336-0 [0014] 201131818 ο [0015] In order to improve the content of non-conductive metal oxide in plastic to improve the light-emitting efficiency of the component, it is easier to completely demold in the process and make the planting The method of improving the yield of the device is improved. The present invention also provides a method for fabricating a compound semiconductor package structure. The eye reference is shown in FIG. 6 as a flow chart for manufacturing a compound semiconductor package. [0016] 胄〆Step 602' provides a mold containing a population. The first mold cavity encloses the first cavity and the second cavity relative to the first cavity, and the first pull hole of the first die has an injection port. The first cavity has a square-conical shaped model space to form a base, and the second cavity has a curved surface to form a reflective cup. The use of a metal material in the aforementioned mold increases the strength and heat resistance of the mold, making the mold durable and not deformed by high temperatures. [0017] In a second step 604, a plurality of metal sheets are disposed between the first mold cavity and the second mold cavity, wherein the plurality of metal sheets are spaced apart from each other and at least one end extends out of the mold. [0018] The third step, 6〇6, is filled with plastic. The plastic is injected into the mold through the injection port of the first step described above. The aforementioned plastic may be polycarbonate (Polycarbonate, PC), polyphthalamide (PPA), polybutylene terephthalte (PBT), polymethyl methacrylate. Polymethyl Methacrylate (PMMA), or other thermoplastic resins. Further, a non-conductive metal oxide such as magnesium oxide, magnesium hydroxide, or titanium dioxide may be added to the plastic to increase the reflectance and improve the light-emitting efficiency of the element. In order to consider various mechanical properties 099107387 Form No. A0101 Page 9 / Total 32 pages 0992013336-0 201131818 Test, including melting index (MI), impact strength, tensile strength (tensi 1 e strength) and The heat distortion temperature and the like were tested, and the ratio of the plastic was about 50 to 99% by weight of the thermoplastic resin and 50% by weight of the non-conductive metal oxide. The foregoing ratios can be adjusted as needed. [0019] Fourth step 608, clamping. The thermoplastic resin is usually in the form of pellets at normal temperature, and is heated to a certain temperature to be in a molten state. After cooling, it is solidified. The principle of injection molding is to add the thermoplastic resin in a quantitative and intermittent manner from the feed funnel, send it to the heating tube to heat it and melt it, then push it forward through the piston or push the head, and then enter the mold cavity through the nozzle. in. When the cavity is filled, the cooling system of the mold cools the plastic material into a solid, and after it is lowered to an appropriate temperature, the mold can be opened. The model obtained by the above-mentioned mold opening is formed by forming a reflecting cup around an accommodating area and being located on one side of a base, and then clamping the mold to continue the next shooting cycle. [0020] In a fifth step 610, a plurality of metal sheets are bent. After the mold is opened, the plurality of metal sheets are fixed between the base and the reflector cup and extend from the base and the sides of the reflector cup, and then the extension ends of the plurality of metal sheets are attached to the base by mechanical means. Get a plurality of guide feet. [0021] A sixth step 612, solid crystal. At least one compound semiconductor wafer is disposed in the aforementioned accommodating area. The at least one compound semiconductor wafer may be a light emitting diode, a laser diode or a light sensing die. [0022] The seventh step 61 4, the line is drawn. The at least one compound semiconductor wafer is electrically connected to the plurality of lead pins by metal wires. [0023] Eighth step 616, sealing the glue. The aforementioned sealant can be epoxy 099107387 Form No. A0101 Page 10 / Total 32 Pages 0992013336-0 201131818 [0024] [0025] [0026] Ο [0027] 099107387 Ρ〇ΧΥ) 石夕胶' (s Η i cone) or a transparent adhesive such as nitride (ηi tr i de). Furthermore, the transparent adhesive material may be doped with a fluorescent conversion material such that the element produces white light or other desired color. The aforementioned fluorescent conversion material may be yttrium aluminum garnet (YAG), yttrium aluminum garnet (TAG), sulfide (SUlflde), phosphide (Phosphate), oxynitride, silicate (siUcate). . The addition of a high level of non-conductive metal oxide to the plastic increases the light reflectivity of the luminescent body carrier' but also increases the brittleness of the plastic, making mold release less susceptible to reduced carrier yield. In order to solve the above problem, the mold in the first step 6〇2 of the present invention is specially provided with a base of a square-shaped pyramid, so that all four sides of the bottom surface are inwardly inclined, so that the lower area of the base is smaller than the upper surface. The first inward angle of the singular quadrilateral and the angle of the second inward angle are greater than 95. . This special shape reduces the bottom area to the mold contact surface and is beneficial for subsequent demolding. In addition, the angle of the bottom surface of the base tends to be moderate, and the angle of the corner can be reduced during demolding. Furthermore, in the third step 6〇p, the temperature of the preheating must be controlled to be similar to the temperature of the plastic melting. This is to avoid the effect of lowering the temperature of the molten plastic due to the lower mold temperature during the process of filling the plastic. The liquid fluidity of the plastic is prematurely cured, resulting in incomplete filling. From the means and efficacies of the present invention, the advantages of the present invention are obtained. First, the base of the compound semiconductor package structure has a square-shaped taper, which preserves a processing space when the metal piece is bent, and reduces the thickness of the base to improve the heat dissipation function of the element. In the process, the present invention can increase the content of the non-conductive metal oxide in the plastic as shown in Form No. A0101, page 11 / page 32, 0992013336-0, 201131818, and increase the process yield, and also increase the reflectivity of the component and reduce the manufacturing cost. [0028] Obviously, many modifications and differences may be made to the invention in light of the above description of the embodiments. It is therefore to be understood that in the scope of the appended claims, the invention may be The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the claims of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the present invention should be included in the following claims. Within the scope. BRIEF DESCRIPTION OF THE DRAWINGS [0029] FIG. 1A is a top plan view of a conventional compound semiconductor package structure. 1B is a cross-sectional view taken along line A to A' of a conventional compound semiconductor package structure of FIG. 1A. 2 is a conventional mold of a compound semiconductor package structure. 3A is a cross-sectional view of a package housing of another conventional compound semiconductor package structure. [0033] FIG. 3B is a cross-sectional view of the base of the package housing of FIG. 3A. 3C is a bottom view of the base of the package housing of FIG. 3A. [0034] FIG. [0035] FIG. 4 is a conventional mold structure of a conventional package housing. 5A is a plan view showing a package structure of a compound semiconductor of the present invention. 5B is a cross-sectional view taken along the line B to B' of the package structure of the compound semiconductor of the present invention. 099107387 Form No. A0101 Page 12 of 32 0992013336-0 201131818 [0038] FIG. 5C is a cross-sectional view of a package housing of a compound semiconductor of the present invention. 5D is a bottom view of a package housing of a compound semiconductor of the present invention. 5E and 5F are bottom views of the base of the package body of the compound semiconductor package structure of the present invention. 6 is a manufacturing flow chart of a compound semiconductor package structure. [Description of Main Component Symbols] 100: Conventional Compound Semiconductor Package Structure [0043] 〇 [0044] 110: Lead Frame 116: Wire [0045] 112: First Guide Pin [0046] 114: Second Guide Pin [ 0047] 120: accommodating area [0048] 122: reflective cup ❹ _] 124: base [0050] 130: compound semiconductor wafer [0051] 200: conventional mold [0052] 212: first metal piece [0053] 214: Second metal piece [0054] 222: annular cavity [0055] 224: square cavity 099107387 Form No. A0101 Page 13 / Total 32 0992013336-0 201131818 [0056] 2 4 0 : Injection port [0057] 312: One lead [0058] 314: second lead [0059] 318: gap [0060] 324: base [0061] 400: conventional mold [0062] 440: injection port [0063] 424: base [0064] 500: Compound semiconductor package structure [0065] 510: lead frame [0066] 512: first lead pin [0067] 514: second lead pin [0068] 516: wire [0069] 520: package case [0070] 522: reflector cup [0071] 524: base [0072] 530: compound semiconductor wafer [0073] 570: accommodating area [0074] 582: first inward angle 099107387 Form No. A0101 14/32 0992013336-0 Total 201 131 818 [0075] 584: second inner angle [0076] 590: 099 107 387 square plastic sheet A0101 Page number 15 / Total 32 0992013336-0