TW201130041A - Gas injection system for etching profile control - Google Patents

Gas injection system for etching profile control

Info

Publication number
TW201130041A
TW201130041A TW100105824A TW100105824A TW201130041A TW 201130041 A TW201130041 A TW 201130041A TW 100105824 A TW100105824 A TW 100105824A TW 100105824 A TW100105824 A TW 100105824A TW 201130041 A TW201130041 A TW 201130041A
Authority
TW
Taiwan
Prior art keywords
gas
injection system
wafer
gas injector
edge part
Prior art date
Application number
TW100105824A
Other languages
Chinese (zh)
Other versions
TWI446441B (en
Inventor
Seong-Sul Seo
Sung-Yong Ko
Yun-Sook Chae
Hwan-Kook Chae
Keehyun Kim
Weon-Mook Lee
Original Assignee
Dms Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dms Co Ltd filed Critical Dms Co Ltd
Publication of TW201130041A publication Critical patent/TW201130041A/en
Application granted granted Critical
Publication of TWI446441B publication Critical patent/TWI446441B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A gas injection system provided in a plasma etching equipment is provided. The system includes a top gas injector for supplying a reaction gas at a top of a chamber, and a side gas injector for supplying a tuning gas from a side surface of the chamber or a backside gas injector upward jetting a tuning gas from a lower side of a wafer. The side gas injector or backside gas injector forms a plurality of jets in a radial shape and simultaneously installs the jets adjacently to an edge part of a wafer such that a tuning gas is jetted adjacently to the edge part of the wafer, thereby being capable of easily controlling a an etch rate or CD uniformity or profile of the edge part.
TW100105824A 2010-02-23 2011-02-22 Gas injection system for etching profile control TWI446441B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100015999A KR101092122B1 (en) 2010-02-23 2010-02-23 Gas injection system for etching profile control

Publications (2)

Publication Number Publication Date
TW201130041A true TW201130041A (en) 2011-09-01
TWI446441B TWI446441B (en) 2014-07-21

Family

ID=44463544

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100105824A TWI446441B (en) 2010-02-23 2011-02-22 Gas injection system for etching profile control

Country Status (4)

Country Link
US (1) US20110203735A1 (en)
KR (1) KR101092122B1 (en)
CN (1) CN102162099B (en)
TW (1) TWI446441B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI697952B (en) * 2015-03-31 2020-07-01 美商蘭姆研究公司 Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5902896B2 (en) * 2011-07-08 2016-04-13 東京エレクトロン株式会社 Substrate processing equipment
US9941100B2 (en) 2011-12-16 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle
US9961323B2 (en) 2012-01-30 2018-05-01 Samsung Electronics Co., Ltd. Method and apparatus for multiview video encoding based on prediction structures for viewpoint switching, and method and apparatus for multiview video decoding based on prediction structures for viewpoint switching
CN111211074B (en) * 2013-04-30 2023-09-22 应用材料公司 Gas flow control liner with spatially distributed gas passages
KR20160021958A (en) 2014-08-18 2016-02-29 삼성전자주식회사 Plasma treating apparatus and substrate treating apparatus
CN105529283B (en) * 2014-09-29 2020-06-30 盛美半导体设备(上海)股份有限公司 Double-sided vapor etching device for wafer
CN105702600A (en) * 2014-11-28 2016-06-22 中国科学院微电子研究所 Air inlet device of semiconductor equipment
JP6404111B2 (en) * 2014-12-18 2018-10-10 東京エレクトロン株式会社 Plasma processing equipment
JP6820736B2 (en) * 2016-12-27 2021-01-27 東京エレクトロン株式会社 Substrate processing method and substrate processing equipment
US20200258718A1 (en) * 2019-02-07 2020-08-13 Mattson Technology, Inc. Gas Supply With Angled Injectors In Plasma Processing Apparatus
CN114613655A (en) * 2020-12-03 2022-06-10 中国科学院微电子研究所 Rotary spraying device, semiconductor reaction chamber and etching machine
CN112466809B (en) * 2021-02-02 2021-06-08 北京中硅泰克精密技术有限公司 Semiconductor process equipment and bearing device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2653633B1 (en) * 1989-10-19 1991-12-20 Commissariat Energie Atomique CHEMICAL TREATMENT DEVICE ASSISTED BY A DIFFUSION PLASMA.
JP2763222B2 (en) * 1991-12-13 1998-06-11 三菱電機株式会社 Chemical vapor deposition method, chemical vapor deposition processing system and chemical vapor deposition apparatus therefor
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
TW356554B (en) * 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
WO1998000576A1 (en) * 1996-06-28 1998-01-08 Lam Research Corporation Apparatus and method for high density plasma chemical vapor deposition
CN1186873A (en) * 1996-11-26 1998-07-08 西门子公司 Distribution plate for reaction chamber with multiple gas inlets and separate mass flow control loops
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6486081B1 (en) * 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
US6206976B1 (en) * 1999-08-27 2001-03-27 Lucent Technologies Inc. Deposition apparatus and related method with controllable edge exclusion
KR100500246B1 (en) * 2003-04-09 2005-07-11 삼성전자주식회사 Gas supplying apparatus
TW200508413A (en) * 2003-08-06 2005-03-01 Ulvac Inc Device and method for manufacturing thin films
US20050092245A1 (en) * 2003-11-03 2005-05-05 Ahn-Sik Moon Plasma chemical vapor deposition apparatus having an improved nozzle configuration
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
WO2006006526A1 (en) * 2004-07-09 2006-01-19 Sekisui Chemical Co., Ltd. Method and device for treating outer periphery of base material
JP4590363B2 (en) * 2005-03-16 2010-12-01 日本碍子株式会社 Gas supply member and processing apparatus using the same
JP4336680B2 (en) * 2006-01-10 2009-09-30 株式会社アルバック Reactive ion etching system
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
JP5074741B2 (en) * 2006-11-10 2012-11-14 株式会社日立ハイテクノロジーズ Vacuum processing equipment
US7879250B2 (en) * 2007-09-05 2011-02-01 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
US20090221149A1 (en) * 2008-02-28 2009-09-03 Hammond Iv Edward P Multiple port gas injection system utilized in a semiconductor processing system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI697952B (en) * 2015-03-31 2020-07-01 美商蘭姆研究公司 Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity

Also Published As

Publication number Publication date
TWI446441B (en) 2014-07-21
KR101092122B1 (en) 2011-12-12
US20110203735A1 (en) 2011-08-25
CN102162099B (en) 2013-06-26
CN102162099A (en) 2011-08-24
KR20110096649A (en) 2011-08-31

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees