TW201129453A - Process for producing wafers - Google Patents

Process for producing wafers

Info

Publication number
TW201129453A
TW201129453A TW99129307A TW99129307A TW201129453A TW 201129453 A TW201129453 A TW 201129453A TW 99129307 A TW99129307 A TW 99129307A TW 99129307 A TW99129307 A TW 99129307A TW 201129453 A TW201129453 A TW 201129453A
Authority
TW
Taiwan
Prior art keywords
wafers
producing wafers
silicon block
carrier
adhesive layer
Prior art date
Application number
TW99129307A
Other languages
English (en)
Chinese (zh)
Inventor
Werner Wiedmann
Original Assignee
Schmid Gmbh & Co Geb
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Gmbh & Co Geb filed Critical Schmid Gmbh & Co Geb
Publication of TW201129453A publication Critical patent/TW201129453A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)
TW99129307A 2009-08-31 2010-08-31 Process for producing wafers TW201129453A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200910040503 DE102009040503A1 (de) 2009-08-31 2009-08-31 Verfahren zur Herstellung von Wafern

Publications (1)

Publication Number Publication Date
TW201129453A true TW201129453A (en) 2011-09-01

Family

ID=42753516

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99129307A TW201129453A (en) 2009-08-31 2010-08-31 Process for producing wafers

Country Status (4)

Country Link
CN (1) CN102639762A (fr)
DE (1) DE102009040503A1 (fr)
TW (1) TW201129453A (fr)
WO (1) WO2011023749A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5995089B2 (ja) * 2012-05-31 2016-09-21 パナソニックＩｐマネジメント株式会社 シリコンウェハ剥離方法、およびシリコンウェハ剥離装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3711262A1 (de) * 1987-04-03 1988-10-13 Wacker Chemitronic Verfahren und mittel zum entfernen von saegehilfsmittelresten von scheiben
US5950643A (en) * 1995-09-06 1999-09-14 Miyazaki; Takeshiro Wafer processing system
KR100471936B1 (ko) * 1996-06-04 2005-09-09 미쓰비시 마테리알 가부시키가이샤 웨이퍼의세정·박리방법및장치
JP3817022B2 (ja) * 1996-11-08 2006-08-30 三益半導体工業株式会社 単結晶インゴットの取付け方法
US6288170B1 (en) * 1997-05-05 2001-09-11 3M Innovative Properties Company Removable adhesive of polyepoxide, curing agent and microspheres
SG136795A1 (en) * 2000-09-14 2007-11-29 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
DE10223937A1 (de) * 2002-05-29 2004-01-15 Wacker Siltronic Ag Zweischichtverklebung von Sägehilfen auf Siliciumeinkristallstäben
JP2004200558A (ja) * 2002-12-20 2004-07-15 Hitachi Cable Ltd 半導体ウェハの劈開方法
JP4330006B2 (ja) * 2004-09-13 2009-09-09 株式会社リコー 感熱粘着層を有する感熱記録材料
DE102005028112A1 (de) * 2005-06-13 2006-12-21 Schmid Technology Systems Gmbh Verfahren zur Positionierung und Lageerhaltung von Substraten, insbesondere von dünnen Siliziumwafern nach dem Drahtsägen zu deren Vereinzelung
WO2008107624A1 (fr) * 2007-03-05 2008-09-12 The University Of Birmingham Matériau composite piézoélectrique
DE102007045455A1 (de) * 2007-09-24 2009-04-09 Schott Ag Verfahren zur Herstellung von Wafern aus Ingots
DE102008028213A1 (de) * 2008-06-06 2009-12-10 Gebr. Schmid Gmbh & Co. Verfahren zum Befestigen eines Silizium-Blocks an einem Träger dafür und entsprechende Anordnung

Also Published As

Publication number Publication date
CN102639762A (zh) 2012-08-15
DE102009040503A1 (de) 2011-03-03
WO2011023749A1 (fr) 2011-03-03

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